JP7644201B2 - 酸化ガリウム単結晶成長用粉末およびその製造方法 - Google Patents
酸化ガリウム単結晶成長用粉末およびその製造方法 Download PDFInfo
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- JP7644201B2 JP7644201B2 JP2023192557A JP2023192557A JP7644201B2 JP 7644201 B2 JP7644201 B2 JP 7644201B2 JP 2023192557 A JP2023192557 A JP 2023192557A JP 2023192557 A JP2023192557 A JP 2023192557A JP 7644201 B2 JP7644201 B2 JP 7644201B2
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- gallium oxide
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- oxide single
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims description 172
- 229910001195 gallium oxide Inorganic materials 0.000 title claims description 171
- 239000013078 crystal Substances 0.000 title claims description 132
- 239000000843 powder Substances 0.000 title claims description 117
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002245 particle Substances 0.000 claims description 65
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 238000000280 densification Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 22
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G51/00—Compounds of cobalt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/11—Powder tap density
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (9)
- 酸化ガリウム単結晶成長用粉末であって、酸化ガリウムからなり、かさ密度が0.7g/cm3以上1.0g/cm3以下であり、BET比表面積が1.5m 2 /g以上4.0m 2 /g以下である、酸化ガリウム単結晶成長用粉末。
- 前記酸化ガリウム単結晶成長用粉末は、D50粒子径が20μm以下の酸化ガリウム粒子からなる、請求項1に記載の酸化ガリウム単結晶成長用粉末。
- 前記酸化ガリウム粒子の縦横比が、1~1.5である、請求項2に記載の酸化ガリウム単結晶成長用粉末。
- 前記酸化ガリウム粒子は、酸化ガリウムである、請求項2に記載の酸化ガリウム単結晶成長用粉末。
- ガリウムを加熱し、気化させる気化段階と、
気化した前記ガリウムを酸化させる酸化段階と、
酸化した酸化ガリウムを冷却し、結晶化する結晶化段階と、
結晶化した前記酸化ガリウムを捕集し、酸化ガリウム粉末を取得する捕集段階と、
捕集した前記酸化ガリウム粉末のかさ密度を0.7g/cm3以上1.0g/cm3以下とする高密度化段階と、を含む酸化ガリウム単結晶成長用粉末の製造方法。 - 前記高密度化段階は、
前記酸化ガリウム粉末を1,200℃~1,300℃の温度で熱処理する熱処理段階を含む、請求項5に記載の酸化ガリウム単結晶成長用粉末の製造方法。 - 前記熱処理段階は、5時間以上行われる、請求項6に記載の酸化ガリウム単結晶成長用粉末の製造方法。
- 前記酸化ガリウム単結晶成長用粉末は、BET比表面積が1.5m2/g以上4.0m2/g以下である、請求項5に記載の酸化ガリウム単結晶成長用粉末の製造方法。
- 前記酸化ガリウム単結晶成長用粉末は、D50粒子径が20μm以下の酸化ガリウム粒子からなる、請求項5に記載の酸化ガリウム単結晶成長用粉末の製造方法。
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| KR10-2022-0151628 | 2022-11-14 | ||
| KR1020220151628A KR102731513B1 (ko) | 2022-11-14 | 2022-11-14 | 산화갈륨 단결정 성장용 분말 및 이의 제조방법 |
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| JP2024071360A JP2024071360A (ja) | 2024-05-24 |
| JP7644201B2 true JP7644201B2 (ja) | 2025-03-11 |
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| Country | Link |
|---|---|
| US (1) | US12371340B2 (ja) |
| JP (1) | JP7644201B2 (ja) |
| KR (2) | KR102731513B1 (ja) |
| CN (1) | CN118028977A (ja) |
| TW (1) | TWI873977B (ja) |
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| KR20250031162A (ko) | 2025-02-12 | 2025-03-06 | 국립부경대학교 산학협력단 | 산화갈륨 단결정 성장 방법 및 이를 통해 제조된 산화갈륨 단결정 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011153054A (ja) | 2010-01-28 | 2011-08-11 | Namiki Precision Jewel Co Ltd | 酸化ガリウム単結晶の製造方法および酸化ガリウム単結晶 |
| JP2016185893A (ja) | 2015-03-27 | 2016-10-27 | Dowaホールディングス株式会社 | 酸化ガリウム凝集体の製造方法および酸化ガリウム凝集体 |
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| JP2950324B1 (ja) * | 1998-05-12 | 1999-09-20 | 三菱マテリアル株式会社 | 酸化ガリウムおよびその製造方法 |
| JP3987935B2 (ja) | 2004-02-16 | 2007-10-10 | 独立行政法人物質・材料研究機構 | 単結晶立方晶系窒化ガリウムナノチューブとその製造方法 |
| JP4611103B2 (ja) | 2005-05-09 | 2011-01-12 | 株式会社光波 | β−Ga2O3結晶の製造方法 |
| CN102245532A (zh) * | 2008-12-15 | 2011-11-16 | 出光兴产株式会社 | 复合氧化物烧结体及由其构成的溅射靶 |
| JP4649536B1 (ja) * | 2010-03-31 | 2011-03-09 | 三井金属鉱業株式会社 | 酸化ガリウム粉末 |
| TW201416323A (zh) * | 2012-10-18 | 2014-05-01 | Solar Applied Mat Tech Corp | 氧化鎵粉末及其製作方法 |
| JP5788925B2 (ja) | 2013-04-04 | 2015-10-07 | 株式会社タムラ製作所 | β−Ga2O3系単結晶の成長方法 |
| KR101902123B1 (ko) | 2017-07-21 | 2018-09-27 | 김태석 | 산화물 분말 제조장치 및 그 제조방법 |
| KR20190065603A (ko) * | 2017-12-04 | 2019-06-12 | 주식회사 퀀타머티리얼스 | 기화법에 의한 산화갈륨 나노분말 및 그 제조방법 |
| CN111592034A (zh) | 2020-05-25 | 2020-08-28 | 先导薄膜材料(广东)有限公司 | 一种氧化镓颗粒及其制备方法 |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011153054A (ja) | 2010-01-28 | 2011-08-11 | Namiki Precision Jewel Co Ltd | 酸化ガリウム単結晶の製造方法および酸化ガリウム単結晶 |
| JP2016185893A (ja) | 2015-03-27 | 2016-10-27 | Dowaホールディングス株式会社 | 酸化ガリウム凝集体の製造方法および酸化ガリウム凝集体 |
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| KR102716283B1 (ko) | 2024-10-11 |
| KR20240034082A (ko) | 2024-03-13 |
| JP2024071360A (ja) | 2024-05-24 |
| TW202423842A (zh) | 2024-06-16 |
| US20240158254A1 (en) | 2024-05-16 |
| US12371340B2 (en) | 2025-07-29 |
| CN118028977A (zh) | 2024-05-14 |
| TWI873977B (zh) | 2025-02-21 |
| KR102731513B1 (ko) | 2024-11-18 |
| KR20240060511A (ko) | 2024-05-08 |
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