JP7650180B2 - Polishing pad and wafer polishing method - Google Patents
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- 238000005498 polishing Methods 0.000 title claims description 119
- 238000000034 method Methods 0.000 title claims description 10
- 239000011230 binding agent Substances 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 23
- 239000004014 plasticizer Substances 0.000 claims description 17
- 239000011148 porous material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 239000004695 Polyether sulfone Substances 0.000 claims description 8
- 229920006393 polyether sulfone Polymers 0.000 claims description 8
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003082 abrasive agent Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 34
- 239000002904 solvent Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 14
- 230000003746 surface roughness Effects 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000011029 spinel Substances 0.000 description 10
- 229910052596 spinel Inorganic materials 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 239000004745 nonwoven fabric Substances 0.000 description 7
- 239000005871 repellent Substances 0.000 description 6
- 230000002940 repellent Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Description
本発明は研磨パッド及びウェハ研磨方法に関する。 The present invention relates to a polishing pad and a wafer polishing method.
特許文献１～４に従来の研磨パッドが開示されている。特許文献１～３の研磨パッドは、不織布にペーストを含侵し、ペースト中の溶剤を除去したものである。特許文献１のペーストは、ウレタンと、ジメチルホルムアミド等の溶剤と、ＳｉＯ2等の研磨粒子と、炭酸ナトリウム等のアルカリ微粒子とからなる。特許文献２のペーストは、エーテル系ウレタンと、Ｎ，Ｎ－ジメチルホルムアミド等の溶剤とからなる。特許文献３のペーストは、ウレタンと、溶剤と、撥水剤とからなる。乾燥等による溶剤の除去により、ウレタンは不織布に結合した状態で硬化している。特許文献４の研磨パッドは、バインダ樹脂、研磨粒子及び溶剤を混合したペーストを用いて製造したものである。
Conventional polishing pads are disclosed in Patent Documents 1 to 4. The polishing pads in Patent Documents 1 to 3 are made by impregnating a nonwoven fabric with a paste and removing the solvent in the paste. The paste in Patent Document 1 is made of urethane, a solvent such as dimethylformamide, abrasive particles such as SiO 2 , and alkaline fine particles such as sodium carbonate. The paste in
特許文献１の研磨パッドは、円盤形状のウェハの外周縁部を研磨するために用いられる。すなわち、回転中心周りに回転可能な回転テーブルにウェハが保持される。この際、ウェハの中心が回転テーブルの回転中心に位置される。一方、研磨パッドの外周端面がウェハの外周縁部と当接するようにスピンドルの上端に研磨パッドを設ける。そして、ウェハの外周縁部と研磨パッドの外周端面との間に研磨液を供給するとともに所定の荷重を付加しつつ、回転テーブル及びスピンドルを回転させる。これにより、ウェハの外周縁部を研磨できる。このため、ウェハの外周縁部による半導体デバイスの欠陥の発生を抑制することが可能となる。 The polishing pad of Patent Document 1 is used to polish the outer periphery of a disk-shaped wafer. That is, the wafer is held on a rotating table that can rotate around the center of rotation. At this time, the center of the wafer is positioned at the center of rotation of the rotating table. Meanwhile, a polishing pad is provided on the upper end of a spindle so that the outer peripheral end face of the polishing pad abuts against the outer periphery of the wafer. Then, a polishing liquid is supplied between the outer periphery of the wafer and the outer peripheral end face of the polishing pad, and a predetermined load is applied while the rotating table and spindle are rotated. This allows the outer periphery of the wafer to be polished. This makes it possible to suppress the occurrence of defects in semiconductor devices due to the outer periphery of the wafer.
しかし、発明者らの試験によれば、従来の研磨パッドは、高い硬度と、低い弾性率との両立が困難であった。このため、被研磨物を高い効率で研磨できないとともに、研磨後の被研磨物の加工面粗さや平坦度が悪化しやすい。例えば、多結晶シリコンウェハ等の多結晶ウェハを被研磨物とした場合には、多結晶ウェハが単結晶ウェハとは異なり、被研磨面内に結晶粒を多く存在させていることから、結晶物性の相違によってそのような事態を生じやすい。 However, according to the inventors' tests, it was difficult for conventional polishing pads to achieve both high hardness and low elasticity. As a result, the workpiece could not be polished efficiently, and the roughness and flatness of the workpiece's processed surface after polishing tended to deteriorate. For example, when a polycrystalline wafer such as a polycrystalline silicon wafer is used as the workpiece, such a situation is likely to occur due to the difference in crystal properties, since polycrystalline wafers, unlike single crystal wafers, have many crystal grains in the polishing surface.
本発明は、上記従来の実情に鑑みてなされたものであって、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れた研磨パッドを提供することを解決すべき課題としている。また、本発明は、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れた研磨方法を提供することを解決すべき課題としている。 The present invention has been made in consideration of the above-mentioned conventional situation, and aims to provide a polishing pad that can polish an object to be polished with high efficiency and that has excellent surface roughness and flatness of the object after polishing. In addition, the present invention aims to provide a polishing method that can polish an object to be polished with high efficiency and that has excellent surface roughness and flatness of the object after polishing.
本発明の研磨パッドは、被研磨物を研磨する研磨面を構成する研磨パッドであって、
可塑剤を含むバインダ樹脂からなり、複数の気孔が形成された母材と、前記母材内又は前記気孔内に保持された研磨粒子とを有し、
前記バインダ樹脂は、前記可塑剤としてのオルトフタル酸又はテレフタル酸を含むポリエーテルサルホンであり、
塑性変形可能であることを特徴とする。
The polishing pad of the present invention is a polishing pad that constitutes a polishing surface for polishing an object to be polished,
The abrasive material has a base material made of a binder resin containing a plasticizer and having a plurality of pores formed therein, and abrasive particles held in the base material or in the pores;
the binder resin is polyethersulfone containing orthophthalic acid or terephthalic acid as the plasticizer,
It is characterized by being plastically deformable .
本発明の研磨パッドは、バインダ樹脂からなる母材内又は母材中の気孔内に研磨粒子を保持していることから、高い硬度を発揮することができる。また、バインダ樹脂が可塑剤を含んでいるため、弾性率を低くすることができる。塑性変形の程度、厚みは研磨対象、研磨部位、研磨条件等によって適宜選択される。これらのため、本発明の研磨パッドで被研磨物を研磨すれば、例え被研磨物が多結晶ウェハであっても、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れる。 The polishing pad of the present invention can exhibit high hardness because the polishing particles are held in the matrix made of binder resin or in the pores in the matrix. In addition, the elastic modulus can be reduced because the binder resin contains a plasticizer. The degree of plastic deformation and thickness are appropriately selected depending on the object to be polished, the polishing part, the polishing conditions, etc. For these reasons, if the polishing pad of the present invention is used to polish an object to be polished, even if the object to be polished is a polycrystalline wafer, the object to be polished can be polished with high efficiency, and the polishing surface roughness and flatness of the object to be polished after polishing are excellent.
本発明のウェハ研磨方法は、ウェハ研磨装置と被研磨物と研磨パッドと研磨液とを用意する第１工程と、
前記被研磨物と前記研磨パッドとの間に前記研磨液を供給しつつ、前記被研磨物を前記研磨パッドの研磨面により研磨する第２工程とを備え、
前記ウェハ研磨装置は、前記研磨パッドを固定する定盤と、前記被研磨物を固定するキャリヤとを備え、
前記被研磨物はウェハであり、
前記研磨パッドは、前記研磨面を構成し、
前記研磨パッドは、可塑剤を含むバインダ樹脂からなり、複数の気孔が形成された母材と、前記母材内又は前記気孔内に保持された研磨粒子とを有し、前記バインダ樹脂が、前記可塑剤としてのオルトフタル酸又はテレフタル酸を含むポリエーテルサルホンであって、塑性変形可能であり、
前記第２工程では、前記定盤と前記キャリヤとを回転させ、前記研磨面を所定押圧力で押圧し、かつ前記ウェハ及び前記研磨パッドの少なくとも一方を相対回転させることを特徴とする。
The wafer polishing method of the present invention includes a first step of preparing a wafer polishing apparatus , a workpiece to be polished, a polishing pad, and a polishing liquid;
a second step of polishing the object to be polished by the polishing surface of the polishing pad while supplying the polishing liquid between the object to be polished and the polishing pad;
The wafer polishing apparatus includes a platen for fixing the polishing pad and a carrier for fixing the workpiece to be polished,
The object to be polished is a wafer,
The polishing pad constitutes the polishing surface,
The polishing pad is made of a binder resin containing a plasticizer, has a base material having a plurality of pores formed therein, and abrasive particles held within the base material or within the pores, and the binder resin is polyethersulfone containing orthophthalic acid or terephthalic acid as the plasticizer, and is plastically deformable;
The second step is characterized in that the platen and the carrier are rotated, the polishing surface is pressed with a predetermined pressing force, and at least one of the wafer and the polishing pad is rotated relatively .
本発明の研磨パッドは、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れる。また、本発明の研磨方法は、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れる。 The polishing pad of the present invention can polish an object to be polished with high efficiency, and the polished object has excellent surface roughness and flatness after polishing. The polishing method of the present invention can polish an object to be polished with high efficiency, and the polished object has excellent surface roughness and flatness after polishing.
本発明の研磨パッドは、研磨面を構成する。研磨パッドは、可塑剤を含むバインダ樹脂からなり、複数の気孔が形成された母材と、母材内又は気孔内に保持された研磨粒子とを有している。 The polishing pad of the present invention constitutes a polishing surface . The polishing pad has a base material made of a binder resin containing a plasticizer and having a plurality of pores formed therein, and abrasive particles held within the base material or the pores.
バインダ樹脂としては、ポリエーテルサルフォン（ＰＥＳ）を採用することが可能である。 As the binder resin, polyethersulfone (PES ) can be used .
可塑剤としては、オルトフタル酸、テレフタル酸を採用することが可能である。 As the plasticizer, orthophthalic acid and terephthalic acid can be used .
研磨粒子としては、シリカ、セリア、アルミナ、ダイヤモンド、ジルコニア、チタニア、マンガン酸化物、炭酸バリウム、酸化クロム、炭化ホウ素、酸化鉄等を採用することが可能である。これらは１種でもよく、２種以上が混合されていてもよい。 Abrasive particles may include silica, ceria, alumina, diamond, zirconia, titania, manganese oxide, barium carbonate, chromium oxide, boron carbide, iron oxide, etc. These may be used alone or in a mixture of two or more types.
被研磨物は単結晶ウェハであってもよいが、発明者らは被研磨物が多結晶ウェハである場合に本発明の作用効果を確認した。また、バインダ樹脂は、可塑剤としてのオルトフタル酸又はテレフタル酸を含むポリエーテルサルホンであることが好ましい。そして、研磨パッドは塑性変形可能であることが好ましい。発明者らはこの組み合わせにおいて本発明の効果を確認した。 The object to be polished may be a single crystal wafer, but the inventors have confirmed the effects of the present invention when the object to be polished is a polycrystalline wafer. The binder resin is preferably polyethersulfone containing orthophthalic acid or terephthalic acid as a plasticizer. The polishing pad is preferably capable of plastic deformation. The inventors have confirmed the effects of the present invention with this combination.
母材を構成するペーストは、バインダ樹脂、可塑剤、無数の研磨粒子の他、溶剤を含む。溶剤としては、ジメチルホルムアミド、ジメチルスルホキシド、アセトン、酢酸エチル、メチルエチルケトン等を採用することができる。これらは１種でもよく、２種以上が混合されていてもよい。溶剤は、バインダ樹脂に応じて種々選択される。 The paste that constitutes the base material contains a binder resin, a plasticizer, numerous abrasive particles, and a solvent. As the solvent, dimethylformamide, dimethylsulfoxide, acetone, ethyl acetate, methyl ethyl ketone, etc. can be used. These may be used alone or in a mixture of two or more. The solvent is selected from a variety of types depending on the binder resin.
また、ペーストは、炭酸ナトリウム、ピペラジン、水酸化カリウム、水酸化ナトリウム、酸化カルシウム、炭酸カリウム、酸化マグネシウム等のアルカリ微粒子を含んでいてもよい。また、ペーストは、フッ素系撥水剤、シリコン系撥水剤、炭化水素系撥水剤及び金属化合物系撥水剤等の撥水剤を含んでもよい。さらに、ペーストは、二酸化チタン、炭酸カルシウム、カーボンブラック等の無機顔料、アゾ顔料、多環顔料等の有機顔料等の顔料を含んでもよい。これらは１種でもよく、２種以上が混合されていてもよい。 The paste may also contain alkaline fine particles such as sodium carbonate, piperazine, potassium hydroxide, sodium hydroxide, calcium oxide, potassium carbonate, and magnesium oxide. The paste may also contain water repellents such as fluorine-based water repellents, silicon-based water repellents, hydrocarbon-based water repellents, and metal compound-based water repellents. The paste may also contain pigments such as inorganic pigments such as titanium dioxide, calcium carbonate, and carbon black, and organic pigments such as azo pigments and polycyclic pigments. These may be used alone or in combination of two or more.
研磨液を用いる場合、研磨液は純水であってもよく、油性であってもよく、酸性又はアルカリ性の薬品を含むものであってもよい。研磨液に研磨粒子を含ませてもよい。 When using an abrasive liquid, the abrasive liquid may be pure water, may be oil-based, or may contain acidic or alkaline chemicals. The abrasive liquid may contain abrasive particles.
（実施例・参考例・比較例）
以下、本発明を具体化した実施例１～４と、参考例１～４と、比較例１～４とを説明する。
(Examples , Reference Examples , and Comparative Examples)
Examples 1 to 4 embodying the present invention, Reference Examples 1 to 4, and Comparative Examples 1 to 4 will be described below.
表１に示すように、可塑剤を種々変え、以下の製造方法によって実施例１～４及び参考性１～４の研磨パッド１３を製造した。 As shown in Table 1, the plasticizer was changed in various ways, and polishing pads 13 of Examples 1 to 4 and References 1 to 4 were manufactured by the manufacturing method described below.
第１工程として、以下のバインダ樹脂、溶剤及び研磨粒子を準備した。
（バインダ樹脂）
ＰＥＳ（ポリエーテルサルフォン）
（溶剤）
Ｎ－メチル－２－ピロリドン
（研磨粒子）
シリカ（ＳｉＯ2）（平均粒径：０．２μｍ）
In the first step, the following binder resin, solvent, and abrasive particles were prepared.
(Binder resin)
PES (Polyethersulfone)
(solvent)
N-methyl-2-pyrrolidone (abrasive particles)
Silica ( SiO2 ) (average particle size: 0.2 μm)
バインダ樹脂：１２質量％、研磨粒子：３９質量％、溶剤：４４質量％及び可塑剤：５質量％を混合し、ペーストとした。 12% by weight of binder resin, 39% by weight of abrasive particles, 44% by weight of solvent, and 5% by weight of plasticizer were mixed to make a paste.
第２工程として、基台上にペーストをシート状に成形してシート状成形体を形成する。そして、このシート状成形体を基台とともに水中に浸漬し、溶剤を水と置換したシート体を得る。そして、シート体を基台とともに水中から取り出し、シート体を基台から離し、乾燥させる。シート体は、溶剤以外の部分は母材となり、溶剤が水と置換して乾燥した部分は気孔となっている。この後、シート体の表面を研磨して研磨面を平滑にし、研磨パッドとする。この研磨パッドは、可塑剤を含むバインダ樹脂からなり、複数の気孔が形成された母材と、母材内又は気孔内に保持された研磨粒子とを有する。 In the second step, the paste is molded into a sheet on a base to form a sheet-like molded body. This sheet-like molded body is then immersed in water together with the base to obtain a sheet body in which the solvent has been replaced with water. The sheet body is then removed from the water together with the base, and is then separated from the base and dried. The parts of the sheet body other than the solvent become the base material, and the parts where the solvent has been replaced with water and dried become pores. The surface of the sheet body is then polished to make the polishing surface smooth, and a polishing pad is formed. This polishing pad is made of a binder resin containing a plasticizer, and has a base material in which multiple pores have been formed, and abrasive particles held within the base material or the pores.
こうして得られた実施例１～４及び参考性１～４の研磨パッドの研磨面のデュロメータ硬度、密度（ｇ／ｃｍ3）、弾性率（ｋｇｆ／ｍｍ2）及び変形挙動も表１に示す。 The durometer hardness, density (g/cm 3 ), elastic modulus (kgf/mm 2 ) and deformation behavior of the polishing surface of the polishing pads of Examples 1 to 4 and References 1 to 4 thus obtained are also shown in Table 1.
比較例１の研磨パッドは、遊離砥粒研磨に使用される軟質系パッドである。この研磨パッドは、不織布（ポリエステル繊維１００％、繊維径１４μｍ、３．０ｍｍ厚）にポリウレタンを含浸させたものであり、研磨粒子は含んでいない。 The polishing pad of Comparative Example 1 is a soft pad used for free abrasive polishing. This polishing pad is made of nonwoven fabric (100% polyester fiber, fiber diameter 14 μm, 3.0 mm thickness) impregnated with polyurethane and does not contain abrasive particles.
比較例２の研磨パッドは、遊離砥粒研磨に使用される硬質系パッドである。この研磨パッドは、不織布（ポリエステル繊維１００％、繊維径１４μｍ、３．０ｍｍ厚）にポリウレタンを含浸させたものであり、研磨粒子は含んでいない。 The polishing pad of Comparative Example 2 is a hard pad used for free abrasive polishing. This polishing pad is made of nonwoven fabric (100% polyester fiber, fiber diameter 14 μm, 3.0 mm thickness) impregnated with polyurethane and does not contain abrasive particles.
比較例３の研磨パッドは、バインダ樹脂（ＰＶＤＦ）：１１質量％、研磨粒子：３４質量％及び溶剤：５６質量％を混合したペーストを用いて特許第５５１１２６６号公報記載の製造方法によって製造したものである。 The polishing pad of Comparative Example 3 was manufactured by the manufacturing method described in Japanese Patent No. 5511266 using a paste containing 11% by weight of binder resin (PVDF), 34% by weight of abrasive particles, and 56% by weight of solvent.
比較例４の研磨パッドは、バインダ樹脂（ＰＥＳ）：１１質量％、研磨粒子：３４質量％及び溶剤：５６質量％を混合したペーストを用いて特許第５５１１２６６号公報記載の製造方法によって製造したものである。 The polishing pad of Comparative Example 4 was manufactured by the manufacturing method described in Japanese Patent No. 5511266 using a paste containing 11% by weight of binder resin (PES), 34% by weight of abrasive particles, and 56% by weight of solvent.
比較例１～４の研磨パッドの研磨面のデュロメータ硬度、密度、弾性率及び変形挙動も表１に示す。 The durometer hardness, density, elastic modulus, and deformation behavior of the polishing surface of the polishing pads of Comparative Examples 1 to 4 are also shown in Table 1.
（試験１）
表２に示すように、実施例３及び比較例４～７の研磨パッド（直径３０ｃｍ）を用意した。これらのデュロメータ硬度及び弾性率（ｋｇｆ／ｍｍ2）も表２に示す。
(Test 1)
Polishing pads (diameter 30 cm) of Example 3 and Comparative Examples 4 to 7 were prepared as shown in Table 2. The durometer hardness and elastic modulus (kgf/mm 2 ) of these are also shown in Table 2.
実施例３及び比較例４の研磨パッドは上記と同様のものである。比較例５の研磨パッドは市販の不織布（ニッタ・ハース製 品番SUBA600）である。 The polishing pads in Example 3 and Comparative Example 4 are the same as those described above. The polishing pad in Comparative Example 5 is a commercially available nonwoven fabric (manufactured by Nitta Haas, product number SUBA600).
比較例６の研磨パッドは、バインダ樹脂（ＰＶＤＦ）：１１質量％、研磨粒子：３４質量％及び溶剤：５５質量％を混合したペーストを用いて特許第５５１１２６６号公報記載の製造方法によって製造したものである。 The polishing pad of Comparative Example 6 was manufactured by the manufacturing method described in Japanese Patent No. 5511266 using a paste containing 11% by weight of binder resin (PVDF), 34% by weight of abrasive particles, and 55% by weight of solvent.
比較例７の研磨パッドは、不織布（ニッタ・ハース製 品番SUBA600）と、バインダ樹脂（ＰＶＤＦ）：１１質量％、研磨粒子：３４質量％及び溶剤：５６質量％を混合したペーストを用意し、不織布にそのペーストを含侵させた後、特許第５５１１２６６号公報記載の製造方法によって製造したものである。 The polishing pad of Comparative Example 7 was manufactured by the method described in Patent Publication No. 5511266 after preparing a paste made by mixing nonwoven fabric (manufactured by Nitta Haas, product number SUBA600) with 11% by weight of binder resin (PVDF), 34% by weight of abrasive particles, and 56% by weight of solvent, and impregnating the nonwoven fabric with the paste.
ウェハ研磨装置（Engis EJW-380）と、多結晶スピネルウェハ（４ｉｎｃｈ）とを用意し、以下の条件で多結晶スピネルウェハを研磨した。
研磨液の流量：１０ｍＬ／分
荷重：８５ｋＰａ
定盤の回転数：６０ｒｐｍ
キャリヤの回転数：６０ｒｐｍ
加工時間：６０分
研磨液：コロイダルシリカスラリー
A wafer polishing machine (Engis EJW-380) and a polycrystalline spinel wafer (4 inch) were prepared, and the polycrystalline spinel wafer was polished under the following conditions.
Flow rate of polishing liquid: 10 mL/min Load: 85 kPa
Rotation speed of the plate: 60 rpm
Carrier rotation speed: 60 rpm
Processing time: 60 minutes Polishing liquid: colloidal silica slurry
多結晶スピネルウェハと各研磨パッドとの間に研磨液を供給しつつ、定盤とキャリヤとを回転させることにより、多結晶スピネルウェハを各研磨パッドの研磨面により研磨し、研磨レート（ｎｍ／時）と、研磨後の面粗さＳａ（ｎｍ）とを測定した。結果を図１、２及び表３に示す。 While supplying a polishing liquid between the polycrystalline spinel wafer and each polishing pad, the platen and carrier were rotated to polish the polycrystalline spinel wafer with the polishing surface of each polishing pad, and the polishing rate (nm/hour) and the surface roughness Sa (nm) after polishing were measured. The results are shown in Figures 1 and 2 and Table 3.
図１、２及び表３より、実施例３の研磨パッドは、比較例４～７の研磨パッドと比較して、多結晶スピネルウェハを高い効率で研磨できることがわかる。実施例３の研磨パッドは、バインダ樹脂からなる母材内又は母材中の気孔内に研磨粒子を保持していることから、高い硬度を発揮することができるからである。 Figures 1 and 2 and Table 3 show that the polishing pad of Example 3 can polish polycrystalline spinel wafers with high efficiency compared to the polishing pads of Comparative Examples 4 to 7. This is because the polishing pad of Example 3 holds abrasive particles within the matrix made of binder resin or within pores in the matrix, and can therefore exhibit high hardness.
また、実施例３の研磨パッドは、比較例４、６、７の研磨パッドと比較して、研磨後の多結晶スピネルウェハの加工面粗さや平坦度に優れることがわかる。実施例３の研磨パッドは、バインダ樹脂が可塑剤を含んでいるため、弾性率が低いからである。 The polishing pad of Example 3 is also superior in surface roughness and flatness of the polished polycrystalline spinel wafer compared to the polishing pads of Comparative Examples 4, 6, and 7. This is because the polishing pad of Example 3 has a low elastic modulus due to the binder resin containing a plasticizer.
これらのため、実施例３の研磨パッドで多結晶スピネルウェハを研磨すれば、多結晶スピネルウェハを高い効率で研磨できるとともに、研磨後の多結晶スピネルウェハの加工面粗さや平坦度に優れる。 For these reasons, when a polycrystalline spinel wafer is polished with the polishing pad of Example 3, the polycrystalline spinel wafer can be polished with high efficiency, and the polished polycrystalline spinel wafer has excellent surface roughness and flatness.
したがって、実施例３の研磨パッドは、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れる。また、実施例３のウェハ研磨方法は、被研磨物を高い効率で研磨できるとともに、研磨後の被研磨物の加工面粗さや平坦度に優れる。 Therefore, the polishing pad of Example 3 can polish the workpiece with high efficiency, and the workpiece has excellent surface roughness and flatness after polishing. Furthermore, the wafer polishing method of Example 3 can polish the workpiece with high efficiency, and the workpiece has excellent surface roughness and flatness after polishing.
以上において、本発明を実施例に即して説明したが、本発明は上記実施例に制限されるものではなく、その趣旨を逸脱しない範囲で適宜変更して適用できることはいうまでもない。 Although the present invention has been described above with reference to examples, it goes without saying that the present invention is not limited to the above examples and can be modified as appropriate without departing from the spirit of the invention.
例えば、実施例では多結晶スピネルウェハを研磨したが、本発明の研磨パッド及びウェハ研磨方法は他の被研磨物、特に多結晶ＳｉＣウェハを研磨する場合にも適用可能である。 For example, in the examples, a polycrystalline spinel wafer was polished, but the polishing pad and wafer polishing method of the present invention can also be applied to polishing other objects, particularly polycrystalline SiC wafers.
本発明は半導体デバイスの製造装置に利用可能である。 The present invention can be used in semiconductor device manufacturing equipment.
Claims (3)
可塑剤を含むバインダ樹脂からなり、複数の気孔が形成された母材と、前記母材内又は前記気孔内に保持された研磨粒子とを有し、
前記バインダ樹脂は、前記可塑剤としてのオルトフタル酸又はテレフタル酸を含むポリエーテルサルホンであり、
塑性変形可能であることを特徴とする研磨パッド。 A polishing pad constituting a polishing surface for polishing an object to be polished,
The abrasive material has a base material made of a binder resin containing a plasticizer and having a plurality of pores formed therein, and abrasive particles held in the base material or in the pores;
the binder resin is polyethersulfone containing orthophthalic acid or terephthalic acid as the plasticizer,
A polishing pad that is plastically deformable .
前記被研磨物と前記研磨パッドとの間に前記研磨液を供給しつつ、前記被研磨物を前記研磨パッドの研磨面により研磨する第２工程とを備え、
前記ウェハ研磨装置は、前記研磨パッドを固定する定盤と、前記被研磨物を固定するキャリヤとを備え、
前記被研磨物はウェハであり、
前記研磨パッドは、前記研磨面を構成し、
前記研磨パッドは、可塑剤を含むバインダ樹脂からなり、複数の気孔が形成された母材と、前記母材内又は前記気孔内に保持された研磨粒子とを有し、前記バインダ樹脂が、前記可塑剤としてのオルトフタル酸又はテレフタル酸を含むポリエーテルサルホンであって、塑性変形可能であり、
前記第２工程では、前記定盤と前記キャリヤとを回転させ、前記研磨面を所定押圧力で押圧し、かつ前記ウェハ及び前記研磨パッドの少なくとも一方を相対回転させることを特徴とするウェハ研磨方法。 A first step of preparing a wafer polishing apparatus, a workpiece, a polishing pad, and a polishing liquid;
a second step of polishing the object to be polished by the polishing surface of the polishing pad while supplying the polishing liquid between the object to be polished and the polishing pad;
The wafer polishing apparatus includes a platen for fixing the polishing pad and a carrier for fixing the workpiece to be polished,
The object to be polished is a wafer,
The polishing pad constitutes the polishing surface,
The polishing pad is made of a binder resin containing a plasticizer, has a base material having a plurality of pores formed therein, and abrasive particles held within the base material or within the pores, and the binder resin is polyethersulfone containing orthophthalic acid or terephthalic acid as the plasticizer, and is plastically deformable;
A wafer polishing method , characterized in that in the second step, the platen and the carrier are rotated, the polishing surface is pressed with a predetermined pressing force, and at least one of the wafer and the polishing pad is rotated relative to one another.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004034175A (en) | 2002-06-28 | 2004-02-05 | Jsr Corp | Polishing pad and multilayer polishing pad |
| JP2005129644A (en) | 2003-10-22 | 2005-05-19 | Disco Abrasive Syst Ltd | Fixed abrasive polishing pad, polishing equipment |
| US20060089093A1 (en) | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
| JP2007531275A (en) | 2004-03-23 | 2007-11-01 | キャボット マイクロエレクトロニクス コーポレイション | Low surface energy CMP pad |
| WO2015152021A1 (en) | 2014-03-31 | 2015-10-08 | 株式会社ノリタケカンパニーリミテド | Method for polishing gan single crystal material |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004034175A (en) | 2002-06-28 | 2004-02-05 | Jsr Corp | Polishing pad and multilayer polishing pad |
| JP2005129644A (en) | 2003-10-22 | 2005-05-19 | Disco Abrasive Syst Ltd | Fixed abrasive polishing pad, polishing equipment |
| JP2007531275A (en) | 2004-03-23 | 2007-11-01 | キャボット マイクロエレクトロニクス コーポレイション | Low surface energy CMP pad |
| US20060089093A1 (en) | 2004-10-27 | 2006-04-27 | Swisher Robert G | Polyurethane urea polishing pad |
| WO2015152021A1 (en) | 2014-03-31 | 2015-10-08 | 株式会社ノリタケカンパニーリミテド | Method for polishing gan single crystal material |
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