JP7654497B2 - Light emitting device and method for manufacturing the same - Google Patents

Description

The present invention relates to a light-emitting device including a light-emitting element.

The light emitting device includes a substrate on which terminals and wiring are provided, at least one light emitting element mounted on the substrate, and a wavelength converter that converts the wavelength of light emitted from the light emitting element. For example, Patent Document 1 discloses a light emitting device having a light emitting element, a wavelength converter, and a reflector that surrounds the light emitting element and the wavelength converter.

Special Publication No. 2013-535111

When a transparent adhesive resin is used to bond a light-emitting element and a wavelength conversion body, a larger amount than desired may be applied in order to obtain sufficient bonding strength. This may cause the adhesive resin to drip onto the side of the light-emitting element or creep up onto the side of the wavelength conversion body.

For example, if adhesive resin drips onto the side of the light-emitting element, the adhesive resin will function as a light guide, and the light emitted from the light-emitting surface of the light-emitting element will be absorbed by the support substrate of the light-emitting element, such as silicon, via the adhesive resin, reducing the light extraction efficiency of the light-emitting device.

In addition, if a large amount of adhesive resin creeps up on the side of the wavelength converter, the volume of the reflector around the upper surface of the wavelength converter, which is the light emission surface, is reduced by the area where the adhesive resin creeps up, causing light leakage into the light-emitting portion of the light-emitting device, where light emitted from the light-emitting element is emitted from the reflector that is not intended to emit light, via the creeping adhesive resin.

To prevent the adhesive resin from dripping or creeping up, the amount of adhesive resin applied to bond the light-emitting element and the wavelength conversion body had to be controlled with high precision.

The present invention has been made in consideration of the above points, and aims to provide a light emitting device and a manufacturing method thereof that suppresses light leakage caused by the adhesive resin dripping onto the side of the light emitting element and creeping up onto the side of the wavelength converter, thereby improving the light extraction efficiency of the light emitting device.

A light emitting device according to the present invention includes a mounting substrate, a supporting substrate having a rectangular upper surface shape, a light emitting functional layer including a light emitting layer formed on the supporting substrate, and an electrode pad on the supporting substrate having a gap with the light emitting functional layer and extending over an end region along one side of the supporting substrate, the light emitting element being disposed on the mounting substrate, a wavelength converter disposed on the light emitting element via a resin portion and covering an upper surface of the light emitting functional layer, and a light reflector disposed on the mounting substrate and covering a side surface of the light emitting element and a side surface of the wavelength converter, the wavelength converter having a first extending portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer to a side surface on the electrode pad side. The wavelength converter has a side portion and a second side portion extending inward from an upper end of the first side portion and reaching the outer edge of the upper surface, and at least one metal bump to which a conductive wire is connected is formed on the electrode pad of the light-emitting element at a distance from the wavelength converter, and the height position of the upper end of the first side portion is higher than the height position of the upper end of the metal bump, and the resin portion has an outflowing resin portion covering the gap between the light-emitting functional layer and the electrode pad on the supporting substrate, at least a portion of the electrode pad, and the first side portion, and the upper end of the outflowing resin portion is located below the upper end position of the first side portion of the wavelength converter .

Further, a method for manufacturing a light emitting device according to the present invention includes an element bonding step of bonding a light emitting element, the light emitting element having a support substrate having a rectangular upper surface shape, a light emitting functional layer including a light emitting layer formed on the support substrate, and an electrode pad formed in an end region on the support substrate with a gap from the light emitting functional layer and along one side of the support substrate, to a mounting substrate; a bonding step of forming a metal bump on the electrode pad of the light emitting element for connecting a conductive wire to the electrode pad; a resin application step of applying a resin to an upper surface of the light emitting functional layer of the light emitting element; and a wavelength converter having a side having a first side portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer and a second side portion extending inward from an upper end of the first side portion to reach the outer edge of an upper surface, the wavelength converter being disposed on the resin such that the side faces the electrode pad. and a light reflector arrangement process of arranging a light reflector on the supporting substrate so as to cover the side surfaces of the light emitting element and the side surfaces of the wavelength converter. In the wavelength converter joining process, the wavelength converter is joined so that the height position of the upper end of the first side portion of the wavelength converter is higher than the height position of the upper end of the metal bump, and in the wavelength converter joining process, the wavelength converter is joined so as to be spaced apart from the metal bump. In the wavelength converter joining process, the resin is caused to flow out from the upper surface of the light emitting functional layer so as to cover the gap between the light emitting functional layer and the electrode pad on the supporting substrate, at least a portion of the electrode pad, and the first side portion to form an outflowing resin portion, and the upper end of the outflowing resin portion is located below the upper end position of the first side portion of the wavelength converter .

FIG. 2 is a top view of a light emitting device according to an embodiment of the present invention. 2 is a cross-sectional view of the light emitting device taken along line AA in FIG. 2 is an enlarged cross-sectional view of a light-emitting element of a light-emitting device according to an embodiment of the present invention. 5A to 5C are diagrams illustrating a manufacturing flow of the light emitting device according to the embodiment of the present invention. 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. 3A and 3B are top views of the light emitting device during manufacture according to the embodiment of the present invention. 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. 5A to 5C are diagrams illustrating the wetting and spreading of an adhesive resin during the manufacture of a light emitting device according to an embodiment of the present invention. 5A to 5C are cross-sectional views of the light emitting device according to the embodiment of the present invention during manufacturing. 13 is a top view of a light emitting device during manufacture according to a modified example of the present invention. FIG. 18 is a cross-sectional view of the light emitting device taken along line BB in FIG. 17.

The following is a detailed description of an embodiment of the present invention. In the following description and accompanying drawings, substantially the same or equivalent parts are given the same reference numerals. In the following description, the term "material 1/material 2" refers to a layered structure in which material 2 is layered on top of material 1. Additionally, the term "material 1-material 2" refers to an alloy of materials 1 and 2.

Figure 1 shows a schematic top view of the light-emitting device 100. Also, Figure 2 shows a cross-sectional view of the light-emitting device 100 of Figure 1 taken along line A-A.

(Light emitting device)
The light emitting device 100 has a substrate 10 having a concave cavity formed on one surface. The light emitting device 100 also has a first wiring 13 and a second wiring 15 formed on the bottom surface of the cavity of the substrate 10, and a light emitting element 20 arranged on the first wiring 13. The light emitting device 100 also has a wavelength converter 30 arranged on the light emitting element 20 via a resin part 50, and a light reflector 60 filled in the cavity of the substrate 10 so as to expose the light output surface 30T, which is the upper surface of the wavelength converter 30. Note that in FIG. 1, the light reflector 60 is omitted from the illustration in order to clarify the structure and positional relationship of each element in the cavity of the substrate 10.

The substrate 10, which serves as a mounting substrate for the light-emitting element 20, is a flat substrate having a rectangular upper surface shape when viewed from above. One surface of the substrate 10 is open, forming a concave cavity. In this embodiment, the substrate 10 is integrally formed with a concave cavity consisting of a bottom and a side wall, but the bottom and the side wall may be formed separately, and the side wall is provided as desired. In the following description, the cavity opening surface of the substrate 10 is referred to as the upper surface of the substrate 10, and the surface of the substrate 10 opposite the cavity opening surface is referred to as the lower surface. In the following description, the direction in which the upper surface of the substrate 10 faces is referred to as the upward direction, and the direction in which the lower surface of the substrate 10 faces is referred to as the downward direction.

The cavity of the substrate 10 is formed, for example, by a rectangular bottom surface and an inner side surface surrounding the bottom surface. The inner side surface of the cavity is formed, for example, vertically from the opening on the top surface of the substrate 10 toward the bottom surface of the cavity, or is formed at an angle that narrows downward from the opening.

The substrate 10 is made of a ceramic base material having high insulating and thermal conductivity, such as alumina (Al ₂ O ₃ ) or aluminum nitride (AlN).

In this embodiment, the substrate 10 is made of flat alumina, and a cavity is formed in the substrate, the cavity having a rectangular bottom surface and an inner surface surrounding the bottom surface and extending vertically.

The base material of the substrate 10 is not limited to the above ceramic material, and may be a thermosetting resin such as epoxy resin (EP), silicone resin (Si), or bismaleimide triazine (BT) resin. The substrate 10 may also be a metal substrate having a base material such as copper (Cu) and an insulating film formed to cover the surface.

The substrate 10 may be an integrated substrate formed by processing the shape of the cavity of the substrate 10 from a single base material. The substrate 10 may be a substrate in which the cavity is formed by joining a flat plate to a frame body having an opening penetrating from the top surface to the bottom surface of the substrate 10 so as to close the opening on the bottom surface of the frame body. The inner surface of the cavity of the substrate 10 may have a shape that combines a vertical surface and an inclined surface.

As shown in Figures 1 and 2, a first wiring 13 and a second wiring 15 are formed on the bottom surface of the cavity of the substrate 10.

The first wiring 13 is, for example, a die pad portion having a rectangular upper surface shape on the bottom surface of the cavity of the substrate 10 on which the light-emitting element 20 can be placed. The second wiring 15 is a bonding region for connecting a bonding wire BW that electrically connects to the light-emitting element 20 to the side of the substrate 10.

As shown in FIG. 2, a portion of each of the first wiring 13 and the second wiring 15 penetrates the substrate 10 and reaches the lower surface of the substrate 10, where it is exposed. The portions of the first wiring 13 and the second wiring 15 exposed to the lower surface function as mounting electrodes for the light-emitting device 100. The lower surface of the substrate 10 also serves as the bottom surface of the light-emitting device 100.

The first wiring 13 and the second wiring 15 are a metal or alloy containing any of copper (Cu), aluminum (Al), and tungsten (W). The first wiring 13 and the second wiring 15 have a nickel (Ni)/gold (Au) metal film laminated on the exposed portions on the bottom surface of the cavity and the lower surface of the substrate 10, respectively. In this embodiment, the first wiring 13 and the second wiring 15 are formed from an alloy containing Cu.

The light-emitting element 20 is a light-emitting diode (Light Emitting Diode: LED), which is a semiconductor light-emitting element. Note that the light-emitting element 20 may be a semiconductor light-emitting element such as an LED or a laser diode (LD), and is preferably an LED that emits ultraviolet to blue light. In this embodiment, an LED that emits blue light was used.

The light-emitting element 20 has a support substrate 21 having a rectangular upper surface shape, a light-emitting functional layer 23 having a rectangular upper surface shape formed on the support substrate 21, and an electrode pad 25 formed on the support substrate 21 in a strip shape along one side of the support substrate 21 and spaced apart from the light-emitting functional layer 23.

The support substrate 21 is made of a material that is opaque to the light emitted from the light-emitting functional layer 23, for example, an opaque and conductive silicon substrate. In addition, since the support substrate 21 is made of a material that absorbs the light emitted from the light-emitting functional layer 23, a reflective layer is formed in the region on the support substrate 21 where the light-emitting functional layer 23 is disposed, suppressing absorption of the emitted light on the upper surface of the support substrate 21. The reflective layer on the support substrate 21 can be formed as a reflective electrode layer that also serves as an electrode for supplying power to the light-emitting element.

A rectangular electrode pad 25 is disposed along one side of a rectangular support substrate 21, and a rectangular light-emitting functional layer 23 is disposed along the remaining three sides. The electrode pad 25 and the reflective electrode layer are disposed at a distance from each other and are appropriately electrically separated by an insulating layer such as _SiO2 .

The light-emitting element 20 has a structure in which a light-emitting functional layer 23 having a thickness of about 4 to 6 μm and made of a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer is laminated on one side of a conductive support substrate 21 made of silicon (Si) and having a thickness of about 100 μm, with a reflective electrode layer interposed between them. The side of the support substrate 21 facing the light-emitting functional layer 23 is the top surface of the light-emitting element 20, and the opposite side is the lower surface or bottom surface of the light-emitting element 20. In addition, the surface of the light-emitting functional layer 23 opposite the reflective electrode layer, i.e., the top surface of the light-emitting functional layer 23, is the element light-emitting surface of the light-emitting element 20.

The light-emitting element 20 has a bonding electrode (not shown) on the bottom surface, which is bonded and electrically connected to the first wiring 13 via the element bonding layer 40. In other words, the reflective electrode layer is electrically connected to the first wiring 13 via the support substrate 21, and functions as a cathode electrode for the light-emitting element 20.

The light-emitting element 20 also has an electrode pad 25 formed so as to be spaced apart from the light-emitting functional layer 23 on the support substrate 21 via a gap. The electrode pad 25 is electrically connected to the p-type semiconductor layer of the light-emitting functional layer 23, and functions as an anode electrode for each of the light-emitting elements 20.

A metal bump BP is disposed on the electrode pad 25 of the light-emitting element 20, and the electrode pad 25 is electrically connected to the second wiring 15 via the metal bump BP and a bonding wire BW. At least one metal bump BP is disposed, but it is preferable to dispose multiple metal bumps BP along the extension direction of the strip-shaped electrode pad 25. The bonding wire BW and the metal bump BP are made of, for example, a metal wire of the same material, and a metal wire containing gold (Au), aluminum (Al), platinum (Pt), copper (Cu), etc. can be used.

The metal bump BP is provided on the electrode pad 25 of the light-emitting element 20. The metal bump BP is also formed by forming a free ball at the tip of a metal wire and bonding it onto the electrode pad 25.

The bonding wire BW rises upward from the pressure-bonded ball joined to the second wiring 15, then extends approximately parallel to the upper surface of the light-emitting element 20 and is joined onto the metal bump BP. In this embodiment, an Au wire with a diameter of 30 μm is used as the bonding wire BW, and three metal bumps BP with a thickness of approximately 25 μm are formed.

One metal bump BP and one bonding wire BW form a pair, and the pair of metal bump BP and bonding wire BW is formed in multiple pairs in different regions of the electrode pad 25 and second wiring 15 of the light-emitting element 20. In this embodiment, three pairs of metal bump BP and bonding wire BW are formed on the electrode pad 25 and second wiring 15 of the light-emitting element 20. Note that, within the range where the power supply resistance can be ignored, the metal bump BP may be a dummy bump to which no bonding wire BW is connected.

The element bonding layer 40 is a conductive metal, and bonds and fixes the light emitting element 20 onto the first wiring 13 while allowing current to flow through it. For example, the element bonding layer 40 can be made of high-temperature solder, eutectic alloy, silver paste, gold bumps, nanoparticle sintered bodies, or the like that do not melt when the light emitting device 100 is mounted on a mounting substrate. In this embodiment, a eutectic alloy made of gold-tin (Au-Sn) is used as the element bonding layer 40. That is, the light emitting element 20 emits light by passing current between the first wiring 13 and the second wiring 15 of the substrate 10.

The wavelength converter 30 is composed of a member containing a phosphor that converts the incident light into light with a longer wavelength and emits the light. The external shape of the wavelength converter 30 when viewed from above is approximately the same shape and size as the light-emitting functional layer 23 of the light-emitting element 20. The wavelength converter 30 is arranged via a resin part 50 so as to cover the upper surface of the light-emitting functional layer 23 of the light-emitting element 20. The wavelength converter 30 also has two main surfaces: a light-entering surface that faces the upper surface of the light-emitting functional layer 23 and is the lower surface through which light emitted from the light-emitting functional layer 23 enters, and a light-emitting surface 30T that is the upper surface facing the outside of the light-emitting device 100.

The wavelength converter 30 may be, for example, a polycrystalline sintered body including a yttrium aluminum garnet (YAG) phosphor doped with cerium (Ce) and/or europium (Eu), a sialon phosphor, an oxynitride phosphor, or a silicon oxide phosphor. In this embodiment, the wavelength converter 30 is a polycrystalline sintered body using YAG:Ce phosphor particles doped with a cerium (Ce) activator and alumina (Al ₂ O ₃ ) particles as binder particles. The wavelength converter 30 is adjusted to absorb a part of the blue light emitted by the light emitting element 20 and emit yellow light, and the light emitted from the light emitting device 100, i.e., the light emitted from the light emitting surface 30T of the wavelength converter 30, becomes white light.

The wavelength converter 30 has a substantially convex cross-sectional shape as shown in FIG. 2. That is, the wavelength converter 30 has a shape in which the area of the upper surface, the light-emitting surface 30T, is smaller than the area of the lower surface. The wavelength converter 30 has a first side portion 30S1 extending vertically upward from the outer edge of the lower surface, and a second side portion 30S2 extending from the upper end of the first side portion 30S1 to the outer edge of the light-emitting surface 30T on its side. The second side portion 30S2 of the wavelength converter 30 is composed of a curved surface 30C extending inward from the upper end of the first side portion 30S1 and curved concavely in the extending direction, and a flat surface 30F extending from the upper end of the curved surface 30C to the outer edge of the light-emitting surface 30T of the wavelength converter 30. In addition, the wavelength converter 30 is formed so that the first side portion 30S1 and the curved surface 30C form an angle, and the curved surface 30C and the flat surface 30F form a continuous surface. In this embodiment, the first side portion 30S1 and the second side portion 30S2 are formed on all side surfaces of the wavelength converter 30.

The resin part 50 is formed on the upper surface of the light-emitting element 20 and has the function of joining the light-emitting functional layer 23 of the light-emitting element 20 to the wavelength converter 30. The resin part 50 is formed as a translucent silicone resin that transmits the radiation light of each of the light-emitting elements 20, for example, by thermally curing a precursor paste of a silicone adhesive.

The resin part 50 is arranged so as to fill the space in the area where the upper surface of the light emitting element 20 and the lower surface of the wavelength conversion body 30 facing it overlap when viewed from above. In the following description, the area where the upper surface of the light emitting element 20 and the lower surface of the wavelength conversion body 30 overlap when viewed from above is referred to as the bonding area. In addition, the part of the resin part 50 arranged in the bonding area is referred to as the bonding resin part 51.

In the resin part 50, on the upper surface of the support substrate 21 of the light-emitting element 20, an outflowing resin part 52 is formed outside the bonding area, covering the gap between the light-emitting functional layer 23 on the support substrate 21 and the electrode pad 25 and at least a part of the upper surface of the electrode pad 25. The outflowing resin part 52 is formed so that the resin supplied onto the light-emitting element 20 when the wavelength conversion body is bonded onto the light-emitting element 20 extends from the bonding area beyond the gap between the light-emitting functional layer 23 and the electrode pad 25 onto the upper surface of the electrode pad 25.

That is, the resin part 50 is integrally formed by a bonding resin part 51 that fills the bonding area between the upper surface of the light-emitting element 20 and the wavelength converter 30, and an outflow resin part 52 that is formed on the upper surface of the light-emitting element 20 on the electrode pad 25 side outside the bonding resin part 51.

The outflow resin portion 52 is formed to cover part or all of the first side portion of the wavelength converter 30 on the electrode pad 25 side, and is formed so as not to reach the second side portion of the wavelength converter 30.

The bonding resin part 51 and the outflowing resin part 52 are made of the same precursor paste. In the manufacturing process described below, the precursor paste of the bonding resin part 51 and the outflowing resin part 52 flows out from the bonding area onto the electrode pad 25, and is heated and hardened to form the bonding resin part 51 and the outflowing resin part 52. In other words, the bonding resin part 51 and the outflowing resin part 52 function as a continuously formed resin part 50.

The precursor paste also creeps up to the first side portion 30S1 of the wavelength converter 30 and extends from the electrode pad 25 to the first side portion 30S1. In this way, the precursor paste extends from the electrode pad 25 to the first side portion 30S1 and is stored there, so that the precursor paste can be prevented from dripping onto the side of the support substrate 21. In other words, the bonding resin portion 51 and the overflowing resin portion 52 can be prevented from extending onto the side of the support substrate 21 of the light emitting element 20.

This allows the light emitted from the light-emitting functional layer 23 and the wavelength converter 30 to be guided to the side surface of the support substrate 21, making it possible to prevent the light from being absorbed by the support substrate 21, thereby preventing a reduction in the light extraction efficiency of the light-emitting device 100.

In addition, because the wavelength converter 30 has a generally convex shape, the precursor paste can be restricted from creeping up the side of the wavelength converter 30 to the first side portion 30S1, and does not reach the second side portion 30S2 of the wavelength converter 30. As a result, the resin portion 50 does not cover the second side portion 30S2 of the wavelength converter 30, so that the second side portion 30S2 of the wavelength converter 30 can be reliably covered by the light reflector 60, and light leakage from the light reflector 60 can be suppressed.

Furthermore, it is preferable that the resin part 50 does not cover the first side portion 30S1 on the other three sides of the wavelength converter 30 other than the electrode pad 25 side, and does not cover the second side portion 30S2 even when it reaches the first side portion 30S1.

As shown in FIG. 2, the light reflector 60 is filled inside the cavity of the substrate 10 so as to seal the light emitting element 20 and cover the side surface of the wavelength conversion body 30. The light reflector 60 is a resin material that is reflective to the light emitted from the light emitting element 20 and the light emitted from the wavelength conversion body 30. The light reflector 60 is filled inside the cavity so as to expose the light output surface 30T, which is the upper surface of the wavelength conversion body 30. In other words, the light reflector 60 is arranged inside the cavity of the substrate 10 so as to cover the side surface of the light emitting element 20 and the side surface of the wavelength conversion body 30.

The light reflector 60 of this embodiment uses a white resin in which titanium dioxide (TiO ₂ ) is dispersed as light-scattering particles in a thermosetting silicone resin.

The light reflector 60 covers at least the second side portion 30S2 of the wavelength converter 30, and covers the first side portion 30S1 of the wavelength converter 30 directly or via the outflow resin portion 52.

By covering the side of the light emitting element 20 and the side of the wavelength conversion body 30 with the light reflector 60, the upper surface of the wavelength conversion body 30 can be determined as the light output surface of the light emitting device 100. In addition, by covering the second side portion 30S2 of the wavelength conversion body 30 with the light reflector 60, light leakage from the light reflector 60 can be suppressed.

Figure 3 is an enlarged cross-sectional view of the light-emitting element 20, the wavelength converter 30, the bonding resin portion 51, and the outflow resin portion 52. Note that Figure 3 is an enlarged cross-sectional view of the cross section shown by line A-A in Figure 1.

In the bonding region between the light emitting element 20 and the wavelength converter 30, a bonding resin part 51 is formed to bond the upper surface of the support substrate 21 to the lower surface of the wavelength converter 30. In addition, an outflow resin part 52 is formed on the support substrate 21, which is continuous with the bonding resin part 51 and extends from the bonding region beyond the gap between the light emitting functional layer 23 and the electrode pad 25 to the upper surface of the electrode pad 25.

A protective film CV is formed on the upper surface of the support substrate 21 except for the light-emitting functional layer 23 and the electrode pads 25. The protective film CV is an insulating film made of silicon oxide (SiO ₂ ) or the like, and is formed so as to cover the side surfaces of the electrode pads 25 and part of the outer edges of the upper surfaces of the electrode pads 25.

In addition, a metal bump BP and a bonding wire BW bonded to the metal bump BP are formed on the electrode pad 25. The metal bump BP and the bonding wire BW are formed so as to be spaced apart from the wavelength converter 30. If the bonding wire BW comes into contact with the wavelength converter 30, there is a risk that the metal bump BP and the bonding wire BW will be damaged, the electrode pad 25 and the light emitting functional layer 23 and the protective film CV on the support substrate 21 will be damaged, or the wavelength converter 30 will be misaligned. Therefore, it is preferable that the metal bump BP and the bonding wire BW are spaced apart from the wavelength converter 30.

In the manufacturing process described below, when applying the precursor paste of the resin part 50 (hereinafter also referred to as potting), the precursor paste is applied to an area located from the center of the upper surface of the light-emitting functional layer 23 toward the electrode pad 25. Then, the wavelength converter 30 is placed on the precursor paste.

After the wavelength converter 30 is placed, the precursor paste is spread out by the weight of the wavelength converter 30. At this time, the end of the precursor paste being spread out reaches the outer end of the side facing the electrode pad 25 on the upper surface of the light-emitting functional layer 23, and flows over the gap (protective film CV) between the light-emitting functional layer 23 and the electrode pad 25 onto the upper surface of the electrode pad 25.

In the following explanation, the precursor paste in the joint area between the upper surface of the light-emitting element 20 and the lower surface of the wavelength converter 30 is referred to as joint paste 51M, and the precursor paste that flows out from the joint area is referred to as outflow paste 52M.

The outflow paste 52M that flows out from the bonding region spreads into the electrode pad 25 by capillary action, propagating along the outer end of the electrode pad 25, particularly the surface of the electrode pad 25 and the side of the protective film CV on the electrode pad 25 side. The outflow paste 52M that spreads into the electrode pad 25 is attracted and stored around the metal bump BP and the bonding wire BW by capillary action. At this time, the outflow paste 52M creeps up to the first side portion 30S1 of the wavelength converter 30. In other words, the bonding paste 51M flows out of the bonding region as the outflow paste 52M before it completely wets and spreads in the bonding region between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30. The outflow paste 52M is attracted (drained) and stored in the region from the upper surface of the electrode pad 25 to the first side portion 30S1 of the wavelength converter 30. In order to absorb and store the outflow paste 52M, it is preferable to form two or more metal bumps BP in different regions on the upper surface of the electrode pad 25 of the light-emitting element 20. In particular, it is more preferable to form two or more metal bumps BP along the extension direction of the electrode pad 25 in order to uniformly form the outflow resin portion 52 along the edge of the light-emitting functional layer 23 on the electrode pad 25 side.

Then, the bonding paste 51M spreads due to capillary action in the bonding area between the upper surface of the light emitting element 20 and the lower surface of the wavelength conversion body 30, and the amount of precursor paste required for spreading over the entire bonding area is supplied (re-drained) from the outflow paste 52M.

The re-draining from the outflow paste 52M to the joint paste 51M is performed automatically until the surface tension of both the exposed surfaces of the joint paste 51M and the outflow paste 52M is minimized. That is, the joint paste 51M is self-volume-controlled to an appropriate amount by draining and re-draining the precursor paste from the outflow paste 52M stored in the area extending from the upper surface of the electrode pad 25 to the first side portion 30S1 of the wavelength converter 30. The joint paste 51M and the outflow paste 52M that have been self-volume-controlled to an appropriate amount as described above are then heated and hardened to become the joint resin part 51 and the outflow resin part 52.

As described above, since the first side portion 30S1 and the curved surface 30C of the wavelength converter 30 are formed to form an angle, it is possible to prevent the outflow paste 52M from creeping up to the upper end or higher of the first side portion 30S1 (inside the outer end of the curved surface 30C). It is preferable that the angle between the tangent plane (two-dot chain line in the figure) at the point where the curved surface 30C touches the upper end of the first side portion 30S1 and the first side portion 30S1 is 135° or less. More preferably, the angle is 120° or less. By forming the first side portion 30S1 and the curved surface 30C to have such an angle, it is possible to prevent the outflow paste 52M from creeping up to the curved surface 30C beyond the first side portion 30S1.

The height position of the upper end of the first side portion 30S1 of the wavelength converter 30 is preferably higher than the metal bump BP and near the upper end of the bonding wire BW on the metal bump BP. The height position of the upper end of the first side portion 30S1 of the wavelength converter 30 is preferably near the upper end of the bonding wire BW and slightly higher than the bonding wire BW. This makes it possible to prevent the outflow paste 52M from climbing over the upper end of the first side portion 30S1 when the outflow paste 52M is sucked around the metal bump BP and the bonding wire BW. That is, the upper ends of the outflow paste 52M and the outflow resin portion 52 after heat curing are at the position of the upper end of the first side portion 30S1 of the wavelength converter 30 or below the upper end of the first side portion 30S1.

If the height position of the upper end of the first side portion 30S1 is too low, the outflow paste 52M may go over the upper end of the first side portion 30S1 when it is sucked around the metal bump BP and the bonding wire BW. Also, if the height position of the upper end of the first side portion 30S1 is too high, the outflow paste 52M may flow out beyond the outer end of the light-emitting element 20 along the bonding wire BW and drip onto the side of the light-emitting element 20 (the side of the support substrate 21). Therefore, the relationship between the upper end position of the first side portion 30S1 and the height positions of the metal bump BP and the bonding wire BW is adjusted according to the viscosity and behavior of the joint paste 51M and the outflow paste 52M.

This makes it possible to prevent the outflow resin portion 52 from excessively creeping up the side surface of the wavelength converter 30. This makes it possible to prevent light from leaking from any surface other than the light-emitting surface of the light-emitting device 100.

In addition, the height from the lower surface of the wavelength converter 30 to the upper end of the first side portion 30S1 is preferably 1/3 or less of the thickness of the wavelength converter 30. In terms of actual dimensions, the height from the light-emitting surface 30T, which is the upper surface of the wavelength converter 30, to the upper end of the first side portion 30S1 is preferably 100 μm or more. This makes it possible to reduce the amount of light emitted from the side of the wavelength converter 30 that is not completely reflected by the light reflector 60 and is transmitted, and is emitted as glare light that leaks from the upper surface of the light reflector 60. In other words, by having the above-mentioned shape of the wavelength converter 30, the light reflector 60 can efficiently reflect the light emitted from the side of the wavelength converter 30, particularly the surface of the curved surface 30C.

In addition, the light reflector 60 efficiently reflects the light emitted from the side surface of the wavelength converter 30, thereby increasing the amount of return light returning from the light reflector 60 to the wavelength converter 30. Therefore, the return light is emitted from the light output surface 30T, which is the upper surface of the wavelength converter 30, thereby improving the light extraction efficiency of the light emitting device 100.

In order to achieve the above-mentioned effect, the light reflector 60 is arranged so as to be in close contact with the side of the wavelength converter 30, particularly the second side portion 30S2.

(Method of manufacturing the light emitting device of the embodiment)
Next, a manufacturing procedure for the light emitting device 100 according to the embodiment of the present invention will be described with reference to FIG. 4 and FIGS.

Figure 4 is a diagram showing the manufacturing flow of the light-emitting device 100 according to an embodiment of the present invention. Figures 5 to 7, 9, and 16 show cross-sectional views of the light-emitting device 100 at each step of the manufacturing procedure shown in Figure 4. Figure 8 shows a top view of the light-emitting device 100 at the end of step S13 of the manufacturing procedure shown in Figure 5. Figures 10 to 15 are diagrams showing details of the application position and wetting spread of the precursor paste in step S14 of the manufacturing procedure shown in Figure 5.

As shown in FIG. 5, the element bonding process is a process of bonding the light emitting element 20 to the substrate 10 (step S11). First, a substrate 10 is prepared with a concave cavity formed on the upper surface and a first wiring 13 and a second wiring 15 provided on the bottom surface of the cavity. Next, gold-tin (Au-Sn) paste is applied to the upper surface of the first wiring 13. Next, a bonding electrode (not shown) provided on the bottom surface of the light emitting element 20 is pressed onto the applied Au-Sn paste for temporary attachment. The substrate 10 in this state is heated to 300°C to melt and solidify the Au-Sn paste, and the light emitting element 20 is fixed to the first wiring 13 and electrically connected.

As shown in FIG. 6, the bonding process is a process of connecting the electrode pad 25 of the light-emitting element 20 and the second wiring 15 with a metal bump BP and a bonding wire BW (step S12). First, a free ball is formed at the tip of a gold (Au) wire and pressure-bonded onto the electrode pad 25, and then the Au wire is cut to form a metal bump BP. Next, a free ball is formed at the tip of the Au wire and connected to the upper surface of the second wiring 15, and raised upward to the height of the electrode pad 25 of the light-emitting element 20. Next, the Au wire is bent so that it is approximately horizontal with the upper surface of the light-emitting element 20 and extended to the electrode pad 25 of the light-emitting element 20, and the other end of the Au wire is connected to the metal bump BP on the electrode pad 25 to form a bonding wire BW.

As shown in Figures 7 and 8, the resin application process is a process of applying a precursor paste PP that will become the bonding resin portion 51 and the outflowing resin portion 52 to the upper surface of the light-emitting functional layer 23 of the light-emitting element 20 (step S13). Using a dispenser or the like filled with the precursor paste PP, which is uncured silicone resin, the precursor paste PP is applied to an area located from the center of the upper surface of the light-emitting functional layer 23 to the electrode pad 25 side. Note that the dashed dotted line shown in Figures 7 and 8 is a center line that passes through the center of the upper surface of the light-emitting functional layer 23 of the light-emitting element 20.

As shown in FIG. 9, the wavelength converter bonding step is a step of placing and bonding the wavelength converter 30 on the precursor paste PP applied to the light-emitting functional layer 23 of the light-emitting element 20 (step S14). First, as described above, a wavelength converter 30 is prepared, the side of which is made up of a first side portion 30S1 and a second side portion 30S2 made up of a curved surface 30C and a flat surface 30F.

The wavelength converter 30 is placed on the precursor paste PP, and the precursor paste PP is allowed to flow onto the electrode pad 25 and creep up onto the first side portion 30S1 of the wavelength converter 30, while spreading over the entire bonding area between the upper surface of the light emitting element 20 and the lower surface of the wavelength converter 30. The precursor paste PP is then heat-treated at 150°C for 15 minutes to harden the precursor paste PP and form the bonding resin portion 51 and the flowed-out resin portion 52.

The wavelength converter 30 can be obtained by sintering a mixture of YAG phosphor powder and alumina powder onto a flat plate and dicing it. Specifically, the flat plate is step-cut using a first blade with a curved tip and a second blade that is thinner than the first blade, thereby forming the wavelength converter 30 having a first side portion 30S1, a curved surface 30C, and a flat surface 30F.

Below, the behavior of the precursor paste PP as it spreads in step S14 and the behavior of the precursor paste PP as it flows out, accumulates, and is supplied will be explained using Figures 10 to 15.

Figures 10, 12, and 14 are enlarged top views of the light-emitting element 20 and the wavelength converter 30. Also, Figures 11, 13, and 15 are enlarged cross-sectional views of the light-emitting element 20 and the wavelength converter 30 taken along line A-A in Figure 1. Note that the substrate 10 is omitted from Figures 10 to 15. Also, the bonding wire BW is omitted from Figures 10, 12, and 14.

In the explanation from FIG. 10 onwards, the precursor paste PP that is in the joining area between the upper surface of the light emitting element 20 and the lower surface of the wavelength conversion body 30 after the wavelength conversion body 30 is placed is referred to as joint paste 51M.

First, as shown in Figures 10 and 11, the wavelength converter 30 is placed so that its lower surface covers the upper surface of the light-emitting functional layer 23 when viewed from above, and the lower surface of the wavelength converter 30 is placed so that it is in contact with the precursor paste PP. As shown in Figure 11, for example, the outer end of the wavelength converter 30 held by an adsorption collet CT or the like is placed in alignment with the end MP, which is the outer end of the side opposite the side on which the electrode pads 25 of the support substrate 21 are provided.

After the wavelength converter 30 is placed, the joint paste 51M spreads concentrically on the upper surface of the light-emitting functional layer 23 as shown in FIG. 10, as indicated by the dashed arrows in FIG. 10. It is preferable to release the wavelength converter 30 from the suction collet CT before the joint paste 51M flows out from the bonding area toward the electrode pad 25.

Next, as shown in FIG. 12, the outer end of the wet spread of the joint paste 51M reaches the edge of the light-emitting functional layer 23 on the side of the electrode pad 25 first, depending on the application position of the precursor paste PP. Therefore, as shown by the dashed arrow in FIG. 12, the joint paste 51M flows out from the edge of the light-emitting functional layer 23 on the side of the electrode pad 25 onto the electrode pad 25 as the outflow paste 52M.

As shown in FIG. 13, the outflow paste 52M that flows out from the joint paste 51M is drawn around the metal bump BP and the bonding wire BW by capillary action and rises to the first side portion 30S1 of the wavelength converter 30, as indicated by the arrows in FIG. 13. As a result, the outflow paste 52M is stored in the area extending from the top surface of the electrode pad 25 to the first side portion 30S1 of the wavelength converter 30.

At this time, the wavelength converter 30 released from the suction collet CT tilts due to its own weight and the application position of the precursor paste PP. This tilt of the wavelength converter 30 promotes the outflow of the joint paste 51M, and the joint paste 51M is stored in the area extending from the upper surface of the electrode pad 25 to the first side portion 30S1 of the wavelength converter 30 before it completely wets and spreads.

14, the bonding paste 51M spreads by capillary action to the bonding region between the upper surface of the light-emitting element 20 and the lower surface of the wavelength conversion body 30, as indicated by the dashed arrow in FIG. 14. At this time, the precursor paste that is insufficient when the bonding paste spreads to the bonding region between the upper surface of the light-emitting element 20 and the lower surface of the wavelength conversion body 30 is supplied from the outflow paste 52M, as indicated by the dashed arrow in FIG. 14 and the arrow in FIG. 15.

In addition, the joint paste 51M is self-volume controlled by supplying precursor paste from the outflow paste 52M until the surface tension of the exposed surfaces of the joint paste 51M and outflow paste 52M is minimized. In addition, by minimizing the surface tension of the exposed surfaces of the joint paste 51M and outflow paste 52M, the wavelength converter 30 becomes stable in a substantially horizontal direction.

The wavelength converter 30 is also self-aligned to a position where it covers the upper surface of the light-emitting functional layer 23 of the light-emitting element 20 due to the surface tension of the joint paste 51M. Specifically, as shown in FIG. 15, the wavelength converter 30 is self-aligned to a position where the surface tension of the joint paste 51M exposed at the end MP of the side opposite the side where the electrode pad 25 of the support substrate 21 is located is minimized (the exposed area of the joint paste 51M at the end MP is minimized). That is, the wavelength converter 30 is self-aligned so as to be closest to the side of the end MP and the side adjacent to the side of the end MP in a top view.

Then, the joint paste 51M and outflow paste 52M in this state were hardened by heat treatment.

The light reflector placement process is a process of filling the cavity of the substrate 10 with a light reflector 60 (step S15), as shown in FIG. 16.

First, silicone resin having titanium oxide ( _TiO2 ) nanoparticles dispersed therein to form the light reflector 60 is injected into the cavity of the substrate 10 so as to cover the side surfaces of the light emitting element 20 and the wavelength converter 30 and expose the light output surface 30T. The filling position or filling speed of the silicone resin is set so as not to generate air bubbles in the cavity and to adhere closely to the side surfaces of the support substrate 21 of the light emitting element 20, the exposed surfaces of the bonding resin portion 51 and the outflowing resin portion 52, the exposed surfaces of the first side surface portion 30S1 of each surface of the wavelength converter 30, and the surface of the second side surface portion 30S2.

Next, the silicone resin filled in the cavity was cured by heating at 150°C for 120 minutes to form the light reflector 60.

This operation seals the first and second wirings 13 and 15 provided on the bottom surface of the cavity of the substrate 10, the light emitting element 20, the metal bumps BP and bonding wires BW, and the sides of the wavelength converter 30.

As described above, according to the manufacturing method of this embodiment, the light emitting device 100 can be manufactured by carrying out steps S11 to S15.

In particular, a wavelength converter 30 having a first side portion 30S1 and a second side portion 30S2 on its side is prepared, and a precursor paste PP that becomes a bonding resin portion 51 and an outflowing resin portion 52 is potted from the center of the upper surface of the light-emitting functional layer 23 of the light-emitting element 20 to a position on the electrode pad 25 side. This allows the precursor paste PP to flow out from the light-emitting functional layer 23 to the electrode pad 25 side as outflowing portion paste 52M, and allows the outflowing outflowing portion paste 52M to be stored in the area from the upper surface of the electrode pad 25 to the first side portion 30S1 of the wavelength converter 30.

A comparison between the light emitting device 100 of the embodiment manufactured as described above and a light emitting device of the comparative example will be described. The light emitting device of the comparative example has the same components and manufacturing method as the embodiment, except for the side shape of the wavelength conversion body. Therefore, only the differences in the light emitting device of the comparative example will be described.

Comparative Example

The wavelength converter in the light emitting device of the comparative example has a flat inclined surface at the portion corresponding to the curved surface 30C of the wavelength converter 30 of the embodiment. That is, the wavelength converter of the comparative example has the flat surfaces 30F of the first side portion 30S1 and the second side portion 30S2, similar to the wavelength converter 30 of the embodiment. Therefore, the wavelength converter of the comparative example differs from the embodiment in that the portion connecting the upper end of the first side portion 30S1 and the flat surface 30F of the second side portion 30S2 is a flat inclined surface. In addition, the inclined surface of the wavelength converter of the comparative example has a gradient angle of 60°. That is, the angle between the inclined surface of the wavelength converter of the comparative example and the first side portion 30S1 is 150°.

First, the light emitting device 100 of the embodiment and the light emitting device of the comparative example were compared with respect to the creeping up of the outflow resin part 52 on the side surface of the wavelength converter. In visual inspection after manufacture, in the light emitting device 100 of the embodiment, the creeping up of the outflow resin part 52 was up to the upper end of the first side surface part 30S1 of the wavelength converter 30. In contrast, in the light emitting device of the comparative example, the outflow resin part 52 exceeded the upper end of the first side surface part 30S1 of the wavelength converter and creeping up to the inclined surface occurred.

Next, the light emitting characteristics of the light emitting device 100 of the embodiment and the light emitting device of the comparative example were compared. The result was that the luminous flux value (lm: lumen) emitted from the light output surface (upper surface) of the wavelength converter, which is the light emitting region of the light emitting device, of the light emitting device was 2.8% higher than the luminous flux value of the light emitting device of the comparative example.

In addition, glare light, which is light leaking from the light reflector 60 of the light emitting device, was compared. When the luminous flux value from the light emitting area of the light emitting device is set to 1, glare light is the relative luminous flux value at a point located 0.2 mm outward from the outer edge of the light emitting area. As for glare light, the results showed that the glare light of the light emitting device 100 of the example was reduced by approximately 27% compared to the glare light of the light emitting device of the comparative example.

The light emitting device 100 and its manufacturing method of the embodiment can suppress excessive creeping up of the adhesive resin that bonds the light emitting element 20 and the wavelength conversion body 30 onto the wavelength conversion body 30. This also enables the light emitting device 100 to increase the luminous flux from the light emitting region (light output surface 30T of the wavelength conversion body 30) and reduce glare light outside the light emitting region. In other words, the light emitting device 100 and its manufacturing method of the embodiment can provide a light emitting device and its manufacturing method that can suppress light leakage caused by the adhesive resin dripping onto the side of the light emitting element and creeping up onto the side of the wavelength conversion body, and improve the light extraction efficiency of the light emitting device.

[Modification]
In the present embodiment, a description has been given of a case in which the first side surface portion 30S1 and the second side surface portion 30S2 are formed on both sides of the wavelength converter 30. However, the shape of the wavelength converter 30 is not limited to this.

Figure 17 is a top view of a light emitting device 100A according to a modified example of the embodiment. Also, Figure 18 is a cross-sectional view of the light emitting device 100A shown in Figure 17 taken along line B-B.

The modified light emitting device 100A differs from the embodiment in that the first side portion 70S1 and the second side portion 70S2 of the wavelength converter 70 are formed only on the side facing the electrode pad 25. Except for the above differences, the other components and manufacturing method of the modified light emitting device 100A are the same as those of the embodiment.

In this modified example, the precursor paste PP that becomes the bonding resin portion 51 and the outflowing resin portion 52 during manufacturing flows out onto the upper surface of the electrode pad 25, and the outflowing resin portion 52 extends in the area from the upper surface of the electrode pad 25 to the first side portion 70S1. That is, as in the embodiment, after the wavelength converter 30 is placed on the upper surface of the light-emitting element 20, the bonding paste 51M flows out from the bonding area as the outflowing paste 52M, and is sucked (drained) and stored in the area from the upper surface of the electrode pad 25 to the first side portion 70S1. In addition, when the bonding area of the bonding paste 51M is wetted and spread, the precursor paste PP is supplied (redrained) from the outflowing paste 52M to the bonding paste 51M. This makes it possible to perform self-volume control of the bonding paste 51M in the bonding area.

Therefore, even in the modified light emitting device 100A, it is possible to prevent the outflow resin portion 52 from creeping up excessively onto the side surface of the wavelength converter 70, thereby making it possible to suppress uneven color and glare in the light obtained from the light emitting device 100A and to improve the light extraction efficiency of the light emitting device 100A.

The above describes examples and variations of the present invention, but these are merely examples and are not limited to the examples.

For example, in the present embodiment and the modified example, the light emitting element 20 is an LED, but the light emitting element 20 may be a surface emitting laser. In addition, in the manufacturing method, the joining paste 51M and the outflow paste 52M that become the joining resin part 51 and the outflow resin part 52 are hardened by the heat treatment in the wavelength conversion body joining process, but they can also be hardened by the heat treatment in the subsequent coating member filling process.

In addition, in the present embodiment and the modified example, the case where one light-emitting element 20 is mounted on the substrate 10 has been described, but multiple light-emitting elements 20 may be mounted on the substrate 10. For example, multiple light-emitting elements 20 may be arranged in a cavity of the substrate 10 so that the light-emitting functional layer 23 and the electrode pad 25 are aligned in a row along the arrangement direction, and the wavelength converter having the side shape of the wavelength converter 30 or 70 may be arranged so as to extend integrally over the light-emitting functional layer 23 of each of the multiple light-emitting elements 20. In addition, when multiple light-emitting elements 20 are mounted on the substrate 10, the wavelength converter 30 or 70 may be arranged separately on each of the light-emitting functional layers 23 of the multiple light-emitting elements 20. Even in this case, the drain of the precursor paste PP of the joint paste 51M in the joint region and the outflow paste 52M flowing out from the joint region on each light-emitting element 20 and the re-drain to the joint can be realized in the same way as in the embodiment.

In addition, in this embodiment and the modified example, the light emitting devices 100 and 100A are described that include a wavelength converter 30 or 70 that is excited by the light emitted from the light emitting functional layer 23 of the light emitting element 20 and converts the wavelength of the emitted light. However, the wavelength converter 30 or 70 may be a light projection plate that does not convert the wavelength of the light emitted from the light emitting functional layer 23.

As such, the described embodiments are not intended to limit the scope of the invention. The described embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These modifications are also included within the scope and spirit of the invention, as well as within the scope of the invention and its equivalents as described in the claims.

Reference Signs List 100 Light emitting device 10 Substrate 13 First wiring 15 Second wiring 20 Light emitting element 21 Support substrate 23 Light emitting functional layer 25 Electrode pad 30 Wavelength converter 40 Element bonding layer 50 Resin portion 51 Bonding resin portion 52 Outflowing resin portion 60 Light reflector 70 Wavelength converter

Claims (11)

A mounting board;
a light emitting element disposed on the mounting substrate, the light emitting element having a support substrate having a rectangular upper surface shape, a light emitting functional layer including a light emitting layer formed on the support substrate, and an electrode pad on the support substrate that is spaced from the light emitting functional layer and extends across an end region along one side of the support substrate;
a wavelength converter disposed on the light emitting element via a resin portion and covering an upper surface of the light emitting functional layer;
a light reflector disposed on the mounting substrate and covering a side surface of the light emitting element and a side surface of the wavelength converter;
the wavelength converter has a first side surface portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer on a side surface on the electrode pad side, and a second side surface portion extending inward from an upper end of the first side surface portion to reach the outer edge of an upper surface,
At least one metal bump to which a conductive wire is connected is formed on the electrode pad of the light emitting element at a distance from the wavelength converter,
a height position of an upper end of the first side surface portion is higher than a height position of an upper end of the metal bump;
the resin portion includes an outflowing resin portion that covers a gap between the light-emitting functional layer and the electrode pad on the support substrate, at least a portion of the electrode pad, and the first side surface portion;
A light emitting device, characterized in that an upper end of the outflowing resin portion is located below an upper end position of a first side surface portion of the wavelength conversion body . The light emitting device according to claim 1, characterized in that the second side portion is formed with a curved surface that extends inward from the upper end of the first side portion and is concave in the extending direction, and a flat surface that extends from the upper end of the curved surface to the outer edge of the upper surface of the wavelength converter. The light-emitting device according to claim 2, characterized in that the minor angle formed by the tangent plane of the curved surface at the point where it touches the upper end of the first side surface portion and the surface including the first side surface portion is 135° or less. The light emitting device according to any one of claims 1 to 3, characterized in that the height from the bottom surface to the upper end of the first side surface portion is 1/3 or less of the thickness of the wavelength conversion body. 5. The light emitting device according to claim 1 , wherein the wavelength converter has an outer shape and a size substantially identical to those of the light emitting functional layer of the light emitting element . The light-emitting device according to claim 5, characterized in that two or more of the metal bumps are arranged in different regions on the electrode pad. The light emitting device according to any one of claims 1 to 6, characterized in that the light reflector is in close contact with the second side portion of the wavelength conversion body. 8. The light emitting device according to claim 1 , wherein the outflowing resin portion is in contact with the conductive wire connected to the metal bump . 9. The light emitting device according to claim 1 , wherein the support substrate is made of a material that is opaque to light emitted from the light emitting functional layer . A method for manufacturing a light emitting device, comprising the steps of:
an element bonding process for bonding a light-emitting element to a mounting substrate, the light-emitting element having a support substrate having a rectangular upper surface shape, a light-emitting functional layer including a light-emitting layer formed on the support substrate, and an electrode pad formed along one side of the support substrate with a gap between the light-emitting functional layer and the electrode pad in an end region on the support substrate;
a bonding step of forming a metal bump on the electrode pad of the light emitting element to connect a conductive wire to the electrode pad;
a resin application step of applying a resin to an upper surface of the light-emitting functional layer on the light-emitting element;
a wavelength converter bonding process for bonding a wavelength converter having a side having a first side portion extending vertically from an outer edge of a bottom surface facing the light emitting functional layer and a second side portion extending inward from an upper end of the first side portion to reach the outer edge of the upper surface, onto the resin so as to cover the light emitting functional layer from above, with the side facing the electrode pad;
a light reflector disposing step of disposing a light reflector on the supporting substrate so as to cover a side surface of the light emitting element and a side surface of the wavelength converter,
In the wavelength converter bonding step, the wavelength converter is bonded such that a height position of an upper end of the first side surface portion of the wavelength converter is higher than a height position of an upper end of the metal bump,
In the wavelength conversion body bonding step, the wavelength conversion body is bonded to the metal bump so as to be spaced apart from the metal bump;
a first side surface portion of the light-emitting functional layer and a second side surface portion of the light- emitting functional layer that is in contact with the first side surface portion of the light-emitting functional layer and that is in contact with the first side surface portion of the light-emitting functional layer, the first side surface portion of the light-emitting functional layer being in contact with the first side surface portion of the light-emitting functional layer and that is ... The method for manufacturing a light-emitting device according to claim 10, characterized in that in the resin application process, the resin is applied to a position on the side from the center of the upper surface of the light-emitting functional layer toward the electrode pad.

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