JP7660347B2 - Manufacturing method of the mounting table - Google Patents

Description

This disclosure relates to a method for manufacturing a mounting table, a mounting table, and a substrate processing apparatus.

Patent document 1 discloses a mounting table configured to adhere an electrostatic adsorption layer onto an electrode block having a flow path for a heat exchange medium.

JP 2015-162618 A

This disclosure provides technology to improve the in-plane uniformity of the thermal resistance of a mounting table.

A method for manufacturing a mounting table according to one aspect of the present disclosure is a method for manufacturing a mounting table in which a flat suction part that electrostatically suctions a substrate is bonded to a flat base. The method for manufacturing the mounting table includes a step of bonding the suction part and the base with an adhesive, a step of identifying the in-plane distribution of thermal resistance of the adhesive layer that bonds the suction part and the base, a step of determining processing conditions for the surface of the suction part based on the identified in-plane distribution of thermal resistance of the adhesive layer so as to reduce the variation in thermal resistance within the surface of the mounting table on which the substrate is placed, and a step of processing the surface of the suction part based on the determined processing conditions.

According to the present disclosure, it is possible to improve the in-plane uniformity of the thermal resistance of the mounting table.

FIG. 1 is a schematic cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment. FIG. 2 is a schematic cross-sectional view illustrating an example of the configuration of the mounting table according to the embodiment. FIG. 3 is a flowchart showing an example of a flow of a manufacturing method of a mounting table according to the embodiment. FIG. 4 is a diagram illustrating an example of an in-plane distribution of the thickness of the electrostatic chuck and the base according to the embodiment. FIG. 5 is a diagram illustrating an example of an in-plane distribution of the thickness of the mounting table according to the embodiment. FIG. 6 is a diagram illustrating an example of a mounting table according to the embodiment.

Hereinafter, the embodiments of the method for manufacturing a mounting table, the mounting table, and the substrate processing apparatus disclosed in the present application will be described in detail with reference to the drawings. Note that the disclosed embodiments do not limit the manufacturing method for a mounting table, the mounting table, and the substrate processing apparatus.

There are known substrate processing apparatuses that perform substrate processing such as film formation and etching on substrates such as semiconductor wafers (hereafter referred to as "wafers"). Some substrate processing apparatuses electrostatically attract the substrate using a mounting table. Such a mounting table is configured, for example, by bonding a flat suction part, such as an electrostatic chuck, that electrostatically attracts the substrate, to a flat base.

However, in a substrate processing apparatus, if the temperature uniformity of the substrate is poor, the uniformity of substrate processing within the substrate surface will decrease. For example, in a semiconductor manufacturing process, if the temperature uniformity of a wafer is poor, the film formation characteristics and etching characteristics within the wafer surface will become non-uniform, resulting in a decrease in the yield of devices manufactured on the wafer.

To improve the in-plane temperature uniformity of the substrate, the in-plane uniformity of the thermal resistance of the mounting table must be improved. However, because the thickness of the adhesive layer that bonds the suction part to the base cannot be made uniform, the in-plane uniformity of the thermal resistance of the mounting table decreases.

Therefore, new technology is needed to improve the uniformity of the thermal resistance of the mounting table.

[Embodiment]
[Device configuration]
An embodiment will be described. In the following, a case where the substrate processing apparatus of the present disclosure is a plasma processing apparatus that performs plasma processing will be described as an example. FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 according to the embodiment is, for example, a capacitively coupled plasma (CCP) type plasma etching apparatus equipped with parallel plate electrodes. The substrate processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, an RF (Radio Frequency) power supply unit 30, and an exhaust system 40. The substrate processing apparatus 1 also includes a mounting table 11 and an upper electrode shower head 12. The substrate processing apparatus 1 also includes a control unit 51.

The plasma processing chamber 10 is made of a material such as aluminum, and is formed, for example, in a substantially cylindrical shape. The inner wall surface of the plasma processing chamber 10 is anodized. The plasma processing chamber 10 is also safety grounded. The mounting table 11 is disposed in a lower region of the plasma processing space 10s in the plasma processing chamber 10. The upper electrode showerhead 12 is disposed above the mounting table 11, and can function as part of the ceiling of the plasma processing chamber 10.

The substrate W is placed on the upper surface of the mounting table 11. The mounting table 11 is configured to support the substrate W in the plasma processing space 10s. In one embodiment, the mounting table 11 includes a base 111, an electrostatic chuck 112, and an edge ring 113. The base 111 is formed in a flat plate shape from a conductive material such as aluminum. The base 111 functions as a lower electrode. The electrostatic chuck 112 is formed in a flat plate shape. The electrostatic chuck 112 is disposed on the base 111 and configured to support the substrate W on the upper surface of the electrostatic chuck 112. The edge ring 113 is disposed so as to surround the substrate W on the peripheral upper surface of the base 111. In addition, although not shown, in one embodiment, the mounting table 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 112 and the substrate W to a target temperature. The temperature adjustment module may include a heater, a flow path, or a combination thereof. A temperature control fluid such as a refrigerant or heat transfer gas flows through the flow path.

The mounting table 11 is supported by a support member 114 provided on the bottom surface of the plasma processing chamber 10. The support member 114 is made of an insulating material. The plasma processing chamber 10 and the mounting table 11 are insulated by the support member 114.

The upper electrode showerhead 12 is supported on the upper part of the plasma processing chamber 10 via an insulating shielding member (not shown). The upper electrode showerhead 12 has an electrode plate 14 and an electrode support 15. The lower surface of the electrode plate 14 faces the plasma processing space 10s. A plurality of gas outlets 14a are formed in the electrode plate 14. The electrode plate 14 is made of a material containing, for example, silicon.

The electrode support 15 is made of a conductive material such as aluminum. The electrode support 15 supports the electrode plate 14 from above in a manner that allows it to be freely attached and detached. The electrode support 15 is safety grounded. The electrode support 15 may have a water-cooled structure (not shown). A diffusion chamber 15a is formed inside the electrode support 15. From the diffusion chamber 15a, a plurality of gas flow ports 15b that communicate with the gas discharge ports 14a of the electrode plate 14 extend downward (toward the mounting table 11). The electrode support 15 is provided with a gas inlet 15c that introduces a process gas into the diffusion chamber 15a, and the gas inlet 15c is connected to a gas supply unit 20 via a pipe.

The upper electrode showerhead 12 is configured to supply one or more process gases from the gas supply 20 to the plasma processing space 10s. In one embodiment, the upper electrode showerhead 12 is configured to supply one or more process gases from the gas inlet 15c through the gas diffusion chamber 12b, the gas outlet 12c, and the gas outlet 14a to the plasma processing space 10s.

The gas supply 20 may include one or more gas sources 21 and one or more flow controllers 22. In one embodiment, the gas supply 20 is configured to supply one or more process gases from respective gas sources 21 through respective flow controllers 22 to the gas inlet 15c. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of one or more process gases.

The RF power supply 30 is configured to supply RF power, e.g., one or more RF signals, to one or more electrodes, such as the base 111, the upper electrode showerhead 12, or both the base 111 and the upper electrode showerhead 12. This generates a plasma from one or more process gases supplied to the plasma processing space 10s. Thus, the RF power supply 30 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. In one embodiment, the RF power supply 30 includes two RF generating units 31a, 31b and two matching circuits 32a, 32b. In one embodiment, the RF power supply 30 is configured to supply a first RF signal from the first RF generating unit 31a to the base 111 via the first matching circuit 32a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

In one embodiment, the RF power supply unit 30 is configured to supply a second RF signal from the second RF generating unit 31b to the base 111 via the second matching circuit 32b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generating unit may be used in place of the second RF generating unit 31b.

Furthermore, although not shown, other embodiments are contemplated in the present disclosure. For example, the RF power supply 30 may be configured to supply a first RF signal from an RF generator to the base 111, a second RF signal from another RF generator to the base 111, and a third RF signal from yet another RF generator to the base 111. Additionally, in other alternative embodiments, a DC voltage may be applied to the upper electrode showerhead 12.

Still further, in various embodiments, one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated in amplitude. Amplitude modulation may include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

The exhaust system 40 may be connected to an exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

An opening 10a is provided in the side wall of the plasma processing chamber 10 for loading and unloading the substrate W. The opening 10a can be opened and closed by a gate valve 10b.

The control unit 51 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform various processes described in this disclosure. The control unit 51 may be configured to control each element of the substrate processing apparatus 1 to perform various processes described herein. The control unit 51 may include, for example, a computer. The computer may include, for example, a processing unit (CPU: Central Processing Unit) 511, a memory unit 512, and a communication interface 513. The processing unit 511 may be configured to perform various control operations based on a program stored in the memory unit 512. The memory unit 512 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 513 may communicate with other devices, such as other substrate processing apparatus 1, via a communication line such as a LAN (Local Area Network).

Next, the configuration of the mounting table 11 according to the embodiment will be described. Figure 2 is a schematic cross-sectional view showing an example of the configuration of the mounting table 11 according to the embodiment.

The mounting table 11 includes a base 111 and an electrostatic chuck 112.

The electrostatic chuck 112 is formed in a disk shape with a flat upper surface. A mounting surface 11a on which the substrate W is placed is formed on the upper surface of the electrostatic chuck 112. The electrostatic chuck 112 has a function of electrostatically adsorbing the substrate W. For example, the electrostatic chuck 112 is configured by interposing an electrode 112b between dielectric bodies 112a such as ceramics. A DC power supply (not shown) is connected to the electrode 112b via wiring (not shown). The electrostatic chuck 112 electrostatically adsorbs the substrate W by Coulomb force generated by applying a DC voltage from the DC power supply to the electrode 112b.

The base 111 is formed in a flat plate shape from a conductive material. A flow path 111a is formed inside the base 111. A chiller unit is connected to the flow path 111a via piping (not shown). The base 111 is configured so that it can be controlled to a predetermined temperature by the chiller unit circulating a refrigerant, such as cooling water or an organic solvent such as Galden, through the flow path 111a.

The mounting table 11 is constructed by bonding a base 111 and an electrostatic chuck 112 with an adhesive. Figure 2 shows an adhesive layer 115 that bonds the base 111 and the electrostatic chuck 112.

However, as described above, in the substrate processing apparatus 1, if the in-plane temperature uniformity of the substrate W is poor, the uniformity of the substrate processing within the surface of the substrate W decreases. For example, in plasma etching, if the in-plane temperature uniformity of the substrate W is low, the etching characteristics within the surface of the substrate W become non-uniform, resulting in a decrease in the yield of devices manufactured on the substrate W.

In a process using plasma, the substrate W is generally adsorbed to the mounting table 11, and the heat from the plasma to the substrate W is propagated to the mounting table 11 and released while performing the plasma processing. Therefore, in order to increase the uniformity of the temperature of the substrate W, the uniformity of the thermal resistance within the surface of the mounting table 11 must be increased. In order to increase the uniformity of the thermal resistance within the surface of the mounting table 11, it is necessary to increase the uniformity of the thickness of the adhesive layer 115. However, it is difficult to bond the electrostatic chuck 112 and the base 111 so that the thickness of the adhesive layer 115 is uniform. The mounting table 11 has low uniformity of the thickness of the adhesive layer 115 within the surface. For this reason, the substrate processing apparatus 1 does not have a stable yield of devices. In addition, since the thickness of the adhesive layer 115 varies greatly from one apparatus to another, the etching characteristics differ for each substrate processing apparatus.

[Flow of manufacturing method of mounting table 11]
Therefore, in this embodiment, the mounting table 11 is manufactured by the method described below. Fig. 3 is a flowchart showing an example of the flow of a method for manufacturing the mounting table 11 according to the embodiment. Fig. 3 illustrates an example of the procedure for manufacturing the mounting table 11. In this embodiment, the mounting table 11 is manufactured by the procedure shown in the flowchart in Fig. 3. An example of the method for manufacturing the mounting table 11 will be described below with reference to Figs. 4 to 6.

First, the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111 is measured (step S10). For example, three-dimensional measurements are performed on the electrostatic chuck 112 and the base 111, respectively, to measure the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111. FIG. 4 is a diagram showing an example of the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111 according to the embodiment. FIG. 4 shows thicknesses d11 to d13 at positions P11 to P13 in the region corresponding to the mounting surface 11a as an example of the in-plane distribution of the thickness of the electrostatic chuck 112. FIG. 4 also shows thicknesses d21 to d23 at positions P21 to P23 in the region corresponding to the mounting surface 11a as an example of the in-plane distribution of the base 111.

Next, the electrostatic chuck 112 and the base 111 are bonded together with an adhesive (step S11).

Then, the in-plane distribution of the thermal resistance of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111 is specified. Specifically, first, the in-plane distribution of the thickness of the mounting table 11 that bonds the electrostatic chuck 112 and the base 111 is measured (step S12). For example, a three-dimensional measurement of the mounting table 11 is performed to measure the in-plane distribution of the thickness of the mounting table 11. FIG. 5 is a diagram showing an example of the in-plane distribution of the thickness of the mounting table 11 according to the embodiment. In FIG. 5, thicknesses d31 to d33 at positions P31 to P33 in the region corresponding to the mounting surface 11a are shown as the thickness of the mounting table 11. Then, based on the measured in-plane distribution of the thickness of the mounting table 11 and the in-plane distribution of the thicknesses of the electrostatic chuck 112 and the base 111, the in-plane distribution of the thickness of the adhesive layer 115 is specified (step S13). The thickness of the mounting table 11 is a value obtained by adding the thickness of the electrostatic chuck 112, the thickness of the base 111, and the thickness of the adhesive layer 115. Therefore, the thickness distribution of the adhesive layer 115 is determined by subtracting the thicknesses of the electrostatic chuck 112 and the base 111 from the thickness of the mounting table 11 measured at each corresponding position. FIG. 5 shows an example of the thickness distribution of the adhesive layer 115 according to the embodiment. For example, the positions P31 to P33 of the mounting table 11 overlap with the positions P11 to P13 of the electrostatic chuck 112 and the positions P21 to P23 of the base 111, and the positions P11 to P13 and the positions P21 to P23 of the base 111 correspond to each other. Note that in FIG. 5 and FIG. 6, the positions P11 to P13 and P21 to P23 are slightly shifted from the positions P31 to P33 for ease of identification. In this case, the thicknesses d41 to d43 of the adhesive layer 115 at the positions P31 to P33 are determined by calculating them according to the following formulas (1) to (3).

d41 = d31-d21-d11 (1)
d42 = d32-d22-d12 (2)
d41 = d31-d21-d11 (3)

Note that if the processing precision of the electrostatic chuck 112 and the base 111 is high and the thicknesses of the electrostatic chuck 112 and the base 111 can be considered as the design thicknesses, the thicknesses of the electrostatic chuck 112 and the base 111 do not need to be measured. The thickness of the adhesive layer 115 may be determined by subtracting the design thicknesses of the electrostatic chuck 112 and the base 111 from the measured thickness of the mounting table 11.

Based on the identified in-plane distribution of the thickness of the adhesive layer 115 and thermal resistance data showing the relationship between the thickness of the adhesive layer 115 and the thermal resistance, the in-plane distribution of the thermal resistance of the adhesive layer 115 is identified (step S14). For example, the adhesive layer 115 is formed in advance with various thicknesses, the thermal resistance of the adhesive layer 115 is measured at each thickness, thermal resistance data showing the relationship between the thickness of the adhesive layer 115 and the thermal resistance is generated, and the thermal resistance data is stored in an information processing device such as a computer. The information processing device uses the thermal resistance data to determine the thermal resistance corresponding to the thickness of the adhesive layer 115 for the in-plane distribution of the thickness of the adhesive layer 115, thereby identifying the in-plane distribution of the thermal resistance of the adhesive layer 115.

Based on the specified in-plane distribution of the thermal resistance of the adhesive layer 115, the processing conditions for the surface of the electrostatic chuck 112 are determined so as to reduce the variation in the thermal resistance in the mounting surface 11a of the mounting table 11 (step S15). The substrate W is mounted on the electrostatic chuck 112. The electrostatic chuck 112 can change the thermal resistance between the substrate W and the electrostatic chuck 112 by changing the shape of the surface to change the contact area with the substrate W. For example, when forming pillars called dots on the surface of the electrostatic chuck 112, the thermal resistance can be adjusted by adjusting the dot diameter and dot height. For example, the dot formation process includes mask creation, resist coating, exposure, development, blasting, and surface brush processing. The dot diameter and dot height can be changed by changing the processing conditions such as the following.
(1) A mask is used in which the dot diameter varies from region to region.
(2) Vary the exposure time for each area.
(3) Vary the blast time for each area.
(4) The surface brush processing conditions (processing time, rotation speed, brush pressing pressure) are changed for each area.

For example, electrostatic chucks 112 with various surface shapes are formed in advance, the thermal resistance of each electrostatic chuck 112 is measured, shape data showing the relationship between the surface shape and the thermal resistance is generated, and the shape data is stored in an information processing device such as a computer. The information processing device uses the shape data for the in-plane distribution of the thermal resistance of the adhesive layer 115 to determine processing conditions for the surface of the electrostatic chuck 112 so as to reduce the variation in thermal resistance within the mounting surface 11a of the mounting table 11. For example, the processing conditions are determined so that the dot size is large or the dots are densely packed in areas of the adhesive layer 115 where the thermal resistance is high, and the dot size is small or the dots are densely packed in areas of the adhesive layer 115 where the thermal resistance is low.

Here, the thermal resistance of the mounting table 11 is the sum of the thermal resistance of the electrostatic chuck 112, the thermal resistance of the base 111, and the thermal resistance of the adhesive layer 115. When the thicknesses of the electrostatic chuck 112 and the base 111 are approximately constant in the region corresponding to the mounting surface 11a, the variation in thermal resistance within the mounting surface 11a of the mounting table 11 is mainly due to the variation in thermal resistance within the surface of the adhesive layer 115. When the thicknesses of the electrostatic chuck 112 and the base 111 are approximately constant in the region corresponding to the mounting surface 11a, the processing conditions for the surface of the electrostatic chuck 112 are determined so as to reduce the variation in thermal resistance within the surface of the adhesive layer 115. On the other hand, if there is a variation in the thickness of the electrostatic chuck 112 and the base 111 in the region corresponding to the mounting surface 11a, the variation in thermal resistance in the mounting surface 11a of the mounting table 11 is due to the combined effect of the variation in thermal resistance in the surface of the electrostatic chuck 112, the base 111, and the adhesive layer 115. In this case, the thermal resistances of the electrostatic chuck 112 and the base 111 are calculated from the thicknesses of the electrostatic chuck 112 and the base 111, respectively. Then, in the region corresponding to the mounting surface 11a, the thermal resistances of the electrostatic chuck 112, the base 111, and the adhesive layer 115 are added for each position to calculate the in-plane distribution of the thermal resistance of the mounting table 11. Then, the processing conditions for the surface of the electrostatic chuck 112 are determined so as to reduce the variation in thermal resistance in the surface of the mounting table 11.

In addition, if the variation in thermal resistance within the surface of the mounting table 11 is small but the individual differences in thermal resistance are large for each mounting table 11 manufactured, the substrate processing apparatus 1 will show different etching characteristics for each individual. Therefore, the processing conditions for the surface of the electrostatic chuck 112 may be determined so that the thermal resistance within the surface of the mounting table 11 falls within a predetermined allowable range. For example, a reference value for the thermal resistance due to the adhesive layer 115 and the electrostatic chuck 112 is determined in advance by design or the like, and the allowable range of the thermal resistance is determined based on the reference value according to the plasma processing performed in the substrate processing apparatus 1. Then, using the shape data, the processing conditions for the surface of the electrostatic chuck 112 are determined so that the thermal resistance obtained by adding the thermal resistance of the adhesive layer 115 and the thermal resistance of the surface of the electrostatic chuck 112 falls within the allowable range based on the in-plane distribution of the thermal resistance of the adhesive layer 115.

Based on the determined processing conditions, the surface of the electrostatic chuck 112 is processed (step S16). For example, according to the determined processing conditions, mask production, resist coating, exposure, development, blasting, and surface brush processing are performed to form dots. FIG. 6 is a diagram showing an example of a mounting table 11 according to an embodiment. In FIG. 6, the surface of the electrostatic chuck 112 is processed to form dots. The mounting table 11 manufactured in this manner can reduce individual differences in the thermal resistance of the mounting table 11 even when there is a large individual difference in the thickness of the adhesive layer 115. By arranging the mounting tables 11 manufactured in this manner, the substrate processing apparatus 1 can suppress differences in etching characteristics between devices.

As described above, the manufacturing method of the mounting table 11 according to the embodiment includes a step of bonding the electrostatic chuck 112 (adsorption portion) and the base 111 with an adhesive (step S11), a step of identifying the in-plane distribution of the thermal resistance of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111 (steps S12 to S14), a step of determining the processing conditions for the surface of the electrostatic chuck 112 so as to reduce the variation in the thermal resistance in the surface (mounting surface 11a) of the mounting table 11 on which the substrate W is placed based on the identified in-plane distribution of the thermal resistance of the adhesive layer 115 (step S15), and a step of processing the surface of the electrostatic chuck 112 based on the determined processing conditions (step S16). As a result, the manufacturing method of the mounting table 11 according to the embodiment can improve the in-plane uniformity of the thermal resistance of the mounting table 11.

The manufacturing method of the mounting table 11 according to the embodiment further includes a step (step S10) of measuring the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111 before the bonding step (step S11). The step of specifying the in-plane distribution of the thermal resistance includes a step (step S12) of measuring the in-plane distribution of the thickness of the mounting table 11 to which the electrostatic chuck 112 and the base 111 are bonded, a step (step S13) of specifying the in-plane distribution of the thickness of the adhesive layer 115 based on the measured in-plane distribution of the thickness of the mounting table 11 and the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111, and a step (step S14) of specifying the in-plane distribution of the thermal resistance of the adhesive layer 115 based on the specified in-plane distribution of the thickness of the adhesive layer 115 and the thermal resistance data 203a indicating the relationship between the thickness of the adhesive layer 115 and the thermal resistance. As a result, the manufacturing method of the mounting table 11 according to the embodiment can specify the in-plane distribution of the thermal resistance of the adhesive layer 115.

The process of determining the in-plane distribution of the thickness of the adhesive layer 115 (step S13) determines the in-plane distribution of the thickness of the adhesive layer 115 by subtracting the thicknesses of the electrostatic chuck 112 and base 111 from the measured thickness of the mounting table 11 for each corresponding position. This allows the manufacturing method of the mounting table 11 according to the embodiment to determine the in-plane distribution of the thickness of the adhesive layer 115 that bonds the electrostatic chuck 112 and base 111.

In addition, the determining process (step S15) determines the processing conditions so that the dots formed on the surface of the electrostatic chuck 112 are large or dense in areas of the adhesive layer 115 where the thermal resistance is high, and are small or sparse in areas of the adhesive layer 115 where the thermal resistance is low. This allows the manufacturing method for the mounting table 11 according to the embodiment to improve the in-plane uniformity of the thermal resistance of the mounting table 11.

The determining process (step S15) determines the processing conditions for the surface of the electrostatic chuck 112 so that the thermal resistance within the surface of the mounting table 11 is within a predetermined tolerance range. As a result, the manufacturing method for the mounting table 11 according to the embodiment can reduce the individual difference in thermal resistance for each mounting table 11 manufactured.

The mounting table 11 according to the embodiment includes an electrostatic chuck 112 (adsorption portion), a base 111, and an adhesive layer 115. The electrostatic chuck 112 is flat and electrostatically adsorbs the substrate W. The base 111 is flat. The adhesive layer 115 bonds the electrostatic chuck 112 and the base 111. The adhesive layer 115 has multiple regions with different thermal resistances. The electrostatic chuck 112 has different surface shapes corresponding to the multiple regions. As a result, the mounting table 11 according to the embodiment improves the in-plane uniformity of the thermal resistance.

In addition, in the multiple regions of the electrostatic chuck 112, the dots formed on the surface of the electrostatic chuck 112 are large or the dots are densely packed in regions with high thermal resistance, and the dots are small or the dots are densely packed in regions with low thermal resistance. As a result, the mounting table 11 according to the embodiment improves the in-plane uniformity of the thermal resistance.

The substrate processing apparatus 1 according to the embodiment also has a mounting table 11 manufactured by the manufacturing method for the mounting table 11 according to the embodiment. This allows the substrate processing apparatus 1 according to the embodiment to suppress non-uniform etching characteristics within the surface of the substrate W. As a result, the substrate processing apparatus 1 can improve the yield of devices manufactured on the substrate W.

Although the embodiments have been described above, the embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

For example, the technology disclosed herein may be employed in any type of plasma processing apparatus. For example, the substrate processing apparatus 1 may be any type of plasma processing apparatus, such as an inductively-coupled plasma (ICP) type or a plasma processing apparatus that excites gas using surface waves such as microwaves.

In the above embodiment, the substrate processing apparatus 1 is described as being a plasma etching processing apparatus, but the disclosed technology is not limited to this. The substrate processing apparatus 1 may be a film forming apparatus or a modification apparatus that uses plasma.

In the above embodiment, the substrate is a semiconductor wafer, but the present invention is not limited to this. The substrate may be another substrate, such as a glass substrate.

The embodiments disclosed herein should be considered as illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

W, substrate 1, substrate processing apparatus 10, plasma processing chamber 11, placement table 111, base 112, electrostatic chuck 115, adhesive layer

Claims (5)

A method for manufacturing a mounting table having an adsorption section that electrostatically adsorbs a substrate and a base that are bonded to the mounting table, comprising the steps of:
a) bonding the suction portion and the base;
b) determining an in-plane distribution of thermal resistance of an adhesive layer that bonds the adsorption portion and the base;
c) determining processing conditions for the surface of the adsorption portion based on the specified in-plane distribution of thermal resistance of the adhesive layer so as to reduce the variation in thermal resistance in the plane on which the substrate is placed of the mounting table; and
d) processing the surface of the suction portion based on the determined processing conditions;
A method for manufacturing a mounting table having the above structure. The method further includes a step of measuring an in-plane distribution of thicknesses of the suction portion and the base before the step a),
The step b) comprises:
b-1) measuring an in-plane distribution of a thickness of the mounting table having the adsorption portion and the base bonded thereto;
b-2) determining the in-plane thickness distribution of the adhesive layer based on the measured in-plane thickness distribution of the mounting table and the in-plane thickness distributions of the suction portion and the base;
and b-3) a step of determining an in-plane distribution of thermal resistance of the adhesive layer based on the determined in-plane distribution of thickness of the adhesive layer and thermal resistance data showing a relationship between the thickness of the adhesive layer and thermal resistance. 3. The method for manufacturing a mounting table according to claim 2, wherein the step b-2) determines an in-plane distribution of the thickness of the adhesive layer by subtracting the thicknesses of the suction portion and the base from the measured thickness of the mounting table for each corresponding position. The method for manufacturing a mounting table described in any one of claims 1 to 3, wherein in step c), the processing conditions are determined so that the size of the dots formed on the surface of the suction portion is large or the dots are densely packed in areas where the thermal resistance of the adhesive layer is high, and the size of the dots is small or the dots are densely packed in areas where the thermal resistance of the adhesive layer is low. 5. The method for manufacturing a mounting table according to claim 1, wherein in the step c), processing conditions for the surface of the adsorption portion are determined so that thermal resistances within the surface of the mounting table are all within a predetermined allowable range.

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