JP7671638B2 - Nozzle unit, liquid processing apparatus and liquid processing method - Google Patents

Description

The present disclosure relates to a nozzle unit, a liquid processing device, and a liquid processing method.

Patent Document 1 discloses a developing device configured to develop a resist film formed on the surface of a substrate by supplying a developing solution to the surface of the substrate. The developing device includes a blower that blows air adjusted to a predetermined temperature onto the substrate from above, and a temperature regulator that maintains the chuck device and the developing solution supply pipe at a predetermined temperature by circulating temperature-controlled water adjusted to a predetermined temperature.

JP 2004-274028 A

This disclosure provides technology that improves the uniformity of temperature distribution across a substrate surface.

A nozzle unit according to one aspect of the present disclosure is a nozzle unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate, and includes a temperature adjustment gas flow path for circulating a temperature adjustment gas for changing the temperature of the solution supplied to the substrate, a temperature adjustment gas nozzle having a temperature adjustment gas outlet for discharging the temperature adjustment gas flowing through the temperature adjustment gas flow path toward the surface of the substrate, a dry gas nozzle having a dry gas outlet for discharging a dry gas toward the surface of the substrate, a processing liquid nozzle having a processing liquid outlet for discharging a processing liquid toward the surface of the substrate, and a drive unit for moving the temperature adjustment gas nozzle, the dry gas nozzle, and the processing liquid nozzle together along the surface of the substrate, the temperature adjustment gas outlet being formed to extend in a first direction along the surface, and the width of the temperature adjustment gas flow path in the first direction increasing as it approaches the temperature adjustment gas outlet so that the temperature adjustment gas from the temperature adjustment gas outlet is discharged radially.

This disclosure provides a technology that improves the uniformity of temperature distribution across the substrate surface.

FIG. 1 is a perspective view showing an example of a substrate processing system. FIG. 2 is a side view that diagrammatically illustrates the inside of the substrate processing system of FIG. FIG. 3 is a top view that diagrammatically illustrates the inside of the substrate processing system of FIG. FIG. 4 is a side view that illustrates a schematic diagram of an example of the liquid processing unit. FIG. 5 is a side view showing an example of a nozzle unit. FIG. 6 is another side view showing an example of the nozzle unit. 7A to 7C are schematic diagrams showing an example of a gas nozzle. FIG. 8 is a block diagram showing an example of a functional configuration of the controller. FIG. 9 is a block diagram showing an example of a hardware configuration of the controller. FIG. 10 is a flow chart showing an example of a liquid processing method. 11(a) and 11(b) are schematic views showing an example of the liquid processing method. FIG. 12 is a schematic diagram showing an example of the liquid processing method. 13(a) and 13(b) are schematic views showing an example of the liquid processing method. FIG. 14 is a side view showing another configuration example of the nozzle unit. FIG. 15 is another side view showing another configuration example of the nozzle unit.

Various exemplary embodiments are described below.

The nozzle unit according to one exemplary embodiment is a nozzle unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate, and includes a temperature adjustment gas flow path for circulating a temperature adjustment gas for changing the temperature of the solution supplied to the substrate, a temperature adjustment gas nozzle having a temperature adjustment gas outlet for discharging the temperature adjustment gas flowing through the temperature adjustment gas flow path toward the surface of the substrate, a dry gas nozzle having a dry gas outlet for discharging a dry gas toward the surface of the substrate, a processing liquid nozzle having a processing liquid outlet for discharging a processing liquid toward the surface of the substrate, and a drive unit for moving the temperature adjustment gas nozzle, the dry gas nozzle, and the processing liquid nozzle together along the surface of the substrate, the temperature adjustment gas outlet being formed to extend in a first direction along the surface, and the width of the temperature adjustment gas flow path in the first direction increasing as it approaches the temperature adjustment gas outlet so that the temperature adjustment gas from the temperature adjustment gas outlet is discharged radially.

In this nozzle unit, the temperature adjustment gas from the temperature adjustment gas outlet of the temperature adjustment gas nozzle is discharged radially in a first direction in which the outlet extends. Therefore, the temperature adjustment gas from the temperature adjustment gas nozzle is supplied to an area of the substrate surface that is longer than the width of the temperature adjustment gas outlet in the first direction. This allows the temperature of the area to which the temperature adjustment gas is supplied to be adjusted during liquid processing, making it possible to improve the uniformity of the temperature distribution within the substrate surface. This also makes it possible to improve, for example, the uniformity of the line width (CD) of the film formed on the processed substrate.

The temperature adjustment gas nozzle may be configured to be removable. By making the temperature adjustment gas nozzle removable, for example, it is possible to flexibly adjust the layout within the device.

The temperature regulating gas flow path may include a supply flow path and a discharge flow path connected downstream of the supply flow path, the supply flow path being a linear flow path extending in a predetermined direction and having a constant inner diameter, and the discharge flow path being a flow path extending along an inclined surface that intersects with the extension direction of the supply flow path and includes the first direction, and the height extending in a direction perpendicular to the first direction may be smaller than the inner diameter. By having the above shape, the flow rate of the liquid is suppressed when flowing from the supply flow path to the discharge flow path, and the temperature regulating gas can be spread radially more uniformly.

The bottom surface of the discharge flow path may be formed by a surface material extending along the inclined surface, and the end of the supply flow path may be connected to the discharge flow path at a position facing the surface material of the discharge flow path. When the end of the supply flow path is connected to the discharge flow path at a position facing the surface material of the discharge flow path, the flow rate of the liquid is more reliably suppressed when the temperature adjustment gas moves from the supply flow path to the discharge flow path.

The discharge flow path may have a uniform length from the connection position with the supply flow path to each position of the temperature adjustment gas outlet, and the temperature adjustment gas outlet may be formed along a curved surface such that the inner side in the width direction protrudes in the discharge direction from the end. By having a uniform distance to each position of the outlet in the discharge flow path, it is possible to improve the uniformity of the flow rate of the temperature adjustment gas within the discharge flow path.

The discharge flow path may be fan-shaped when viewed from a direction perpendicular to the inclined surface, and the temperature adjustment gas discharge port may be formed along an arc of the fan shape. With such a shape, it is possible to further improve the uniformity of the flow rate of the temperature adjustment gas within the discharge flow path.

The temperature adjustment gas outlet may be located higher than the processing liquid outlet. When the temperature adjustment gas outlet is located higher than the processing liquid outlet, the temperature adjustment gas can be more uniformly ejected onto the surface of the substrate.

In a second direction perpendicular to the first direction and along the surface of the substrate, the temperature adjustment gas nozzle may be provided at a different position from the drying gas nozzle and the processing liquid nozzle.

In the second direction, the drying gas nozzle and the processing liquid nozzle may be provided at different positions.

The drying gas nozzle and the processing liquid nozzle may be provided at the same position in the second direction and at different positions in the first direction.

The temperature adjustment gas, the drying gas, and the processing liquid may be supplied to approximately the same position on the surface of the substrate in a second direction perpendicular to the first direction and along the surface of the substrate.

The driving unit may be configured to move the temperature adjustment gas nozzle, the drying gas nozzle, and the processing liquid nozzle along the first direction in accordance with the type of fluid to be discharged, thereby supplying the fluid to the surface of the substrate. With this configuration, the temperature adjustment gas, the drying gas, and the processing liquid can be supplied to the surface of the substrate with a simpler operation.

A substrate processing apparatus according to one exemplary embodiment includes the nozzle unit described above, a substrate holding unit that holds and rotates the substrate with the surface facing upward, and a control unit that controls the nozzle unit and the substrate holding unit.

In this nozzle unit, the temperature adjustment gas from the temperature adjustment gas outlet of the temperature adjustment gas nozzle is discharged radially in a first direction in which the outlet extends. Therefore, the temperature adjustment gas from the temperature adjustment gas nozzle is supplied to an area of the substrate surface that is longer than the width of the temperature adjustment gas outlet in the first direction. This makes it possible to adjust the temperature of the area to which the temperature adjustment gas is supplied during liquid processing, thereby improving the uniformity of the temperature distribution within the substrate surface.

The temperature regulating gas and the dry gas are supplied from the same supply source and through the same supply path, and in the nozzle unit, the temperature regulating gas flow path and the dry gas flow path that supplies the dry gas may be different from each other.

The above configuration prevents the nozzle unit itself from becoming too large, and allows for flexible changes to the nozzle unit's placement in the substrate processing apparatus.

A nozzle unit liquid processing method according to one exemplary embodiment is a liquid processing method using a nozzle unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate, the nozzle unit including a temperature control gas nozzle having a temperature control gas flow path for circulating a temperature control gas, the width of which in a first direction along the surface of the substrate increases toward a temperature control gas outlet, the temperature control gas outlet formed to extend in the first direction and for discharging the temperature control gas flowing through the temperature control gas flow path toward the surface of the substrate, and a dry gas nozzle having a dry gas outlet for discharging dry gas toward the surface of the substrate. a processing liquid nozzle having a processing liquid outlet that discharges processing liquid toward the surface of the substrate; and a drive unit that moves the temperature adjustment gas nozzle, the drying gas nozzle, and the processing liquid nozzle together along the surface of the substrate, the drive unit radially discharges the temperature adjustment gas from the temperature adjustment gas outlet toward the surface of the substrate, discharges the processing liquid from the processing liquid outlet toward the surface of the substrate after discharging the temperature adjustment gas, and discharges the drying gas from the drying gas outlet toward the surface of the substrate after discharging the processing liquid.

According to the above substrate processing method, the temperature adjustment gas from the temperature adjustment gas outlet of the temperature adjustment gas nozzle in the nozzle unit is radially discharged in a first direction in which the outlet extends. Therefore, the temperature adjustment gas from the temperature adjustment gas nozzle is supplied to an area of the substrate surface that is longer than the width of the temperature adjustment gas outlet in the first direction. This allows the temperature of the area to which the temperature adjustment gas is supplied to be adjusted during liquid processing, thereby improving the uniformity of the temperature distribution within the substrate surface. This also allows, for example, the uniformity of the line width (CD) of the film formed on the processed substrate to be improved.

Below, an embodiment will be described with reference to the drawings. In the description, identical elements or elements having the same functions are given the same reference numerals, and duplicate descriptions will be omitted. Some drawings show an orthogonal coordinate system defined by the X-axis, Y-axis, and Z-axis. In the following embodiment, the Z-axis corresponds to the vertical direction, and the X-axis and Y-axis correspond to the horizontal direction.

[Substrate Processing System]
1 to 3, a configuration of a substrate processing system 1 will be described. The substrate processing system 1 includes a coating and developing apparatus 2 (liquid processing apparatus) and an exposure apparatus 3.

The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W. The coating and developing apparatus 2 is also configured to perform a developing process of the resist film R. The exposure apparatus 3 is configured to transfer the workpiece W between the coating and developing apparatus 2 and perform an exposure process (pattern exposure) of the resist film R formed on the surface Wa of the workpiece W (see FIG. 4, etc.). The exposure apparatus 3 may selectively irradiate the exposure target portion of the resist film R with energy rays by a method such as immersion exposure.

The workpiece W to be processed is, for example, a substrate, or a substrate on which a film or circuit has been formed by a predetermined process. The substrate included in the workpiece W is, for example, a wafer containing silicon. The workpiece W (substrate) may be formed in a circular shape, or in a plate shape other than a circular shape, such as a polygonal shape. The workpiece W may have a cutout portion in which a part is cut out. The cutout portion may be, for example, a notch (a groove such as a U-shape or a V-shape) or a linear portion that extends in a straight line (so-called an orientation flat). The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate body obtained by performing a predetermined process on such a substrate. The diameter of the workpiece W may be, for example, about 200 mm to 450 mm.

The energy ray may be, for example, ionizing radiation, non-ionizing radiation, etc. Ionizing radiation is radiation that has sufficient energy to ionize atoms or molecules. Ionizing radiation may be, for example, extreme ultraviolet (EUV), electron beam, ion beam, X-ray, alpha ray, beta ray, gamma ray, heavy particle beam, proton beam, etc. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Non-ionizing radiation may be, for example, g-ray, i-ray, KrF excimer laser, ArF excimer laser, F2 excimer laser, etc.

(Coating and developing equipment)
The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the workpiece W before the exposure process by the exposure device 3. In addition, the coating and developing apparatus 2 is configured to perform a development process of the resist film R after the exposure process by the exposure device 3.

As shown in Figures 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit). The carrier block 4, the processing block 5, and the interface block 6 are aligned in the horizontal direction.

The carrier block 4 includes a carrier station 12 and a loading/unloading section 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates at least one workpiece W in a sealed state. A door (not shown) for opening and closing is provided on the side 11a of the carrier 11 for loading and unloading the workpiece W. The carrier 11 is detachably installed on the carrier station 12 so that the side 11a faces the loading/unloading section 13.

The loading/unloading section 13 is located between the carrier station 12 and the processing block 5. As shown in Figs. 1 and 3, the loading/unloading section 13 has multiple opening/closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening/closing doors of the carrier 11 face the opening/closing doors 13a. By simultaneously opening the opening/closing doors 13a and the opening/closing doors on the side 11a, the inside of the carrier 11 and the inside of the loading/unloading section 13 are connected. As shown in Figs. 2 and 3, the loading/unloading section 13 has a built-in transport arm A1. The transport arm A1 is configured to take out the workpiece W from the carrier 11 and pass it to the processing block 5, and to receive the workpiece W from the processing block 5 and return it to the carrier 11.

The processing block 5 includes processing modules PM1 to PM4, as shown in Figures 2 and 3.

The processing module PM1 is configured to form an underlayer film on the surface of the workpiece W, and is also called a BCT module. As shown in FIG. 3, the processing module PM1 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A2 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM1 may be configured to apply, for example, a coating liquid for forming the underlayer film to the workpiece W. The heat processing unit U2 of the processing module PM1 may be configured to perform, for example, a heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an underlayer film. An example of the underlayer film is an anti-reflective (SiARC) film.

The processing module PM2 is configured to form an intermediate film (hard mask) on the lower layer film, and is also called an HMCT module. The processing module PM2 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A3 configured to transport the workpiece W to these. The liquid processing unit U1 of the processing module PM2 may be configured to apply a coating liquid for forming an intermediate film to the workpiece W, for example. The heat processing unit U2 of the processing module PM2 may be configured to perform a heat treatment to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form an intermediate film. Examples of intermediate films include an SOC (Spin On Carbon) film and an amorphous carbon film.

The processing module PM3 is configured to form a thermosetting and photosensitive resist film R on the intermediate film, and is also called a COT module. The processing module PM3 includes a liquid processing unit U1, a heat processing unit U2, and a transport arm A4 configured to transport a workpiece W to these. The liquid processing unit U1 of the processing module PM3 may be configured to apply a coating liquid (resist liquid) for forming a resist film to the workpiece W, for example. The heat processing unit U2 of the processing module PM3 may be configured to perform a heating process (PAB: Pre Applied Bake) to harden the coating film formed on the workpiece W by the liquid processing unit U1 to form the resist film R.

The resist material contained in the resist liquid may be a positive resist material or a negative resist material. A positive resist material is a resist material in which the pattern exposed parts dissolve and the pattern unexposed parts (light-shielding parts) remain. A negative resist material is a resist material in which the pattern unexposed parts (light-shielding parts) dissolve and the pattern exposed parts remain.

The processing module PM4 is configured to perform a development process on the exposed resist film, and is also called a DEV module. The processing module PM4 includes a liquid processing unit U1, a thermal processing unit U2, and a transport arm A5 configured to transport the workpiece W to these units. The liquid processing unit U1 of the processing module PM4 is configured to perform a development process (liquid processing) on the workpiece W using a solution such as a developer. For example, it may be configured to partially remove the resist film R to form a resist pattern (not shown). The thermal processing unit U2 of the processing module PM4 may be configured to perform, for example, a heating process before the development process (PEB: Post Exposure Bake), a heating process after the development process (PB: Post Bake), etc.

As shown in Figures 2 and 3, the processing block 5 includes a shelf unit 14 located near the carrier block 4. The shelf unit 14 extends in the vertical direction and includes a plurality of cells aligned in the vertical direction. A transport arm A6 is provided near the shelf unit 14. The transport arm A6 is configured to raise and lower the workpiece W between the cells of the shelf unit 14.

The processing block 5 includes a shelf unit 15 located near the interface block 6. The shelf unit 14 extends in the vertical direction and includes multiple cells aligned in the vertical direction.

The interface block 6 incorporates a transport arm A7 and is connected to the exposure device 3. The transport arm A7 is configured to take out the workpiece W from the shelf unit 15 and pass it to the exposure device 3, and to receive the workpiece W from the exposure device 3 and return it to the shelf unit 15.

(Liquid processing unit)
Next, the liquid processing unit U1 of the processing module PM4 will be described in more detail with reference to Figures 4 to 6. As shown in Figure 4, the liquid processing unit U1 includes a substrate holding part 20 (substrate holding unit), a supply part 30, a supply part 40, a cover member 70, and a blower B within a housing H.

At the bottom of the housing H, an exhaust section V1 is provided which is configured to exhaust gas from within the housing H by operating based on a signal from the control device 100. The exhaust section V1 may be, for example, a damper whose exhaust volume can be adjusted according to the opening degree. By adjusting the exhaust volume from the housing H with the exhaust section V1, the temperature, pressure, humidity, etc. within the housing H can be controlled. The exhaust section V1 may be controlled to constantly exhaust the inside of the housing H during the liquid treatment of the workpiece W.

<Substrate holding part>
The substrate holding unit 20 is configured to hold and rotate the workpiece W. For example, the substrate holding unit 20 holds and rotates the workpiece W with its front surface Wa facing upward. The substrate holding unit 20 includes a rotating unit 21, a shaft 22, and a holding unit 23.

The rotating unit 21 is configured to operate based on an operating signal from the control device 100 and rotate the shaft 22. The rotating unit 21 is a power source such as an electric motor. The holding unit 23 is provided at the tip of the shaft 22. The workpiece W is placed on the holding unit 23 with its surface Wa facing upward. The holding unit 23 is configured to hold the workpiece W approximately horizontally, for example by suction. That is, the substrate holding unit 20 rotates the workpiece W around a central axis (rotation axis) perpendicular to the surface Wa of the workpiece W while the workpiece W is in an approximately horizontal position. In this embodiment, the surface Wa of the workpiece W held by the substrate holding unit 20 is along the X-Y plane.

<Supply unit 30>
The supply unit 30 is configured to supply a processing liquid L1 to a surface Wa of the workpiece W. The processing liquid L1 may be, for example, a developing solution. The supply unit 30 includes a supply mechanism 31, a drive mechanism 32, and a nozzle 33.

The supply mechanism 31 is configured to send out the processing liquid L1 stored in a container (not shown) using a liquid delivery mechanism (not shown) such as a pump based on a signal from the control device 100. The drive mechanism 32 is configured to move the nozzle 33 in the vertical and horizontal directions based on a signal from the control device 100. The nozzle 33 is configured to eject the processing liquid L1 supplied from the supply mechanism 31 onto the surface Wa of the workpiece W.

<Supply Unit 40>
The supply unit 40 is configured to supply the processing liquid L2, the temperature adjusting gas G1, and the drying gas G2 to the surface Wa of the workpiece W. The processing liquid L2 may be, for example, a rinse liquid (cleaning liquid). The temperature adjusting gas G1 and the drying gas G2 are not particularly limited as long as they are gases, but may be an inert gas (for example, nitrogen). The temperature adjusting gas G1 and the drying gas G2 may have temperatures of about 20°C to 25°C. The supply unit 40 includes supply mechanisms 41A to 41C and a nozzle unit 43. The temperature adjusting gas G1 and the drying gas G2 may be configured to be supplied from the same supply source, for example. At least in the stage preceding the nozzle unit 43, the supply flow paths are separated, and each gas is supplied through a different flow path in the nozzle unit 43.

As shown in FIG. 4, the supply mechanism 41A is configured to send out the temperature regulating gas G1 stored in a container (not shown) by an air supply mechanism (not shown) such as a pump based on a signal from the control device 100. The supply mechanism 41B is configured to send out the dry gas G2 stored in a container (not shown) by an air supply mechanism (not shown) such as a pump based on a signal from the control device 100. The supply mechanism 41C is configured to send out the processing liquid L2 stored in a container (not shown) by a liquid supply mechanism (not shown) such as a pump based on a signal from the control device 100.

The nozzle unit 43 is configured to eject the temperature adjustment gas G1, drying gas G2, and processing liquid L2 supplied from the supply mechanisms 41A to 41C onto the surface Wa of the workpiece W. As shown in FIG. 5, the nozzle unit 43 includes a holding arm 44, a drying gas nozzle 45, a temperature adjustment gas nozzle 46, processing liquid nozzles 47 and 49, and a drive unit 50 that moves these nozzles by moving the holding arm 44. Each part of the nozzle unit 43 will be described below.

[Holding arm]
The holding arm 44 is configured to hold the drying gas nozzle 45, the temperature adjusting gas nozzle 46, and the processing liquid nozzles 47 and 49. The holding arm 44 includes, for example, a horizontal portion 44a extending horizontally (in the X-axis direction in the drawing) and a vertical portion 44b extending vertically. One end of the horizontal portion 44a may be connected to the drive unit 50 at a position that does not overlap with the workpiece W held by the substrate holding unit 20. The upper end of the vertical portion 44b is connected to the other end of the horizontal portion 44a. The vertical portion 44b extends downward (in the -Z direction) from the tip of the horizontal portion 44a toward the surface Wa of the workpiece W. The lower end of the vertical portion 44b and the surface Wa of the workpiece W are spaced apart in the vertical direction. A gas flow path 42a through which the temperature adjusting gas G1 supplied from the supply mechanism 41A flows may be provided inside the holding arm 44. Furthermore, a gas flow path 42b through which the dry gas G2 supplied from the supply mechanism 41B flows, and a treatment liquid flow path 42c through which the treatment liquid L2 supplied from the supply mechanism 41C flows may be provided inside the holding arm 44. Furthermore, a treatment liquid flow path 42d through which the treatment liquid supplied from the supply mechanism 41C flows may be provided inside the holding arm 44. Note that, although the gas flow paths 42a, 42b and the treatment liquid flow paths 42c, 42d in the holding arm 44 are shown by dashed lines in Fig. 5, the flow path diameter of each flow path is appropriately adjusted depending on the type of gas or treatment liquid to be passed, the flow rate per unit time, and the like.

[Drying gas nozzle]
The dry gas nozzle 45 is configured to eject the dry gas G2 toward the surface Wa of the workpiece W. The dry gas nozzle 45 may eject the dry gas G2 from above the surface Wa in a direction substantially perpendicular to the surface Wa. When viewed from each of the Y-axis direction and the X-axis direction, the ejection direction of the dry gas G2 from the dry gas nozzle 45 is substantially perpendicular to the surface Wa.

In the example shown in FIG. 5, the dry gas nozzle 45 is provided at the lower end of the vertical portion 44b of the holding arm 44. The dry gas nozzle 45 is provided with a gas flow path 45a (dry gas flow path) extending in the vertical direction. The gas flow path 45a passes through the horizontal portion 44a of the holding arm 44 and is continuous with the gas flow path 42b that extends to the lower end of the vertical portion 44b. The dry gas nozzle 45 includes an outlet 45b (dry gas outlet) that discharges the dry gas G2 supplied to the gas flow path 45a via the gas flow path 42b toward the surface Wa. The outlet 45b is provided, for example, on the lower end surface of the dry gas nozzle 45 and opens at the lower end surface. The shape (contour) of the outlet 45b may be circular when viewed from the discharge direction of the dry gas G2 (the Z-axis direction shown in the figure).

[Temperature adjustment gas nozzle]
The temperature adjusting gas nozzle 46 is configured to discharge the temperature adjusting gas G1 toward the surface Wa of the workpiece W. The temperature adjusting gas nozzle 46 discharges the temperature adjusting gas G1 radially toward the surface Wa from above the surface Wa. For example, as shown in FIG. 6, the temperature adjusting gas nozzle 46 discharges the temperature adjusting gas G1 along a plurality of different angles with respect to the surface Wa as viewed from the X-axis direction. The temperature adjusting gas nozzle 46 may discharge the temperature adjusting gas G1 uniformly in a radial discharge range. On the other hand, the temperature adjusting gas nozzle 46 may discharge the temperature adjusting gas G1 in one direction inclined with respect to the surface Wa as viewed from the Y-axis direction.

In the example shown in Figures 5 and 6, the temperature adjustment gas nozzle 46 is fixed to the lower end of the horizontal portion 44a of the holding arm 44, below the vertical portion 44b. The temperature adjustment gas nozzle 46 may be detachable from the holding arm 44. If the temperature adjustment gas nozzle 46 is detachable, the temperature adjustment gas nozzle 46 may be configured to be detachable depending on the use of the nozzle unit 43. The temperature adjustment gas nozzle 46 can also be attached and detached in situations such as when installing the nozzle unit 43.

The temperature adjusting gas nozzle 46 is provided with a gas flow path 51 (temperature adjusting gas flow path) that is continuous with the gas flow path 42a through which the temperature adjusting gas G1 supplied from the supply mechanism 41A flows. The gas flow path 42a opens at the lower end of the horizontal portion 44a of the holding arm 44. The gas flow path 51 is formed so as to be continuous with the opening at the lower end of the gas flow path 42a. The temperature adjusting gas nozzle 46 also includes an outlet 52 (temperature adjusting gas outlet) that discharges the temperature adjusting gas G1 flowing through the gas flow path 51 toward the surface Wa of the workpiece W. For example, the temperature adjusting gas nozzle 46 has a block-shaped main body portion 53 that forms the gas flow path 51 therein, and the outlet 52 opens on at least one surface included in the main body portion 53.

The gas flow path 51 includes a supply flow path 55 located on the upstream side and a discharge flow path 56 located on the downstream side. In this disclosure, the terms "upstream" and "downstream" are used with reference to the flow of gas or liquid. One upstream end of the supply flow path 55 is connected to a gas flow path 42a provided inside the horizontal portion 44a of the holding arm 44, and the other downstream end of the supply flow path 55 is connected to one upstream end of the discharge flow path 56. A discharge port 52 is provided at the other downstream end of the discharge flow path 56.

The supply flow passage 55 circulates the temperature adjustment gas G1, for example, vertically downward. As an example, the supply flow passage 55 may be a linear flow passage that extends in a predetermined direction (up and down) and has a constant inner diameter. The discharge flow passage 56 circulates the temperature adjustment gas G1 along the extension direction of the inclined surface D0 that is inclined at a predetermined angle with respect to the surface Wa of the workpiece W, and allows it to reach the discharge port 52. The discharge flow passage 56 circulates the temperature adjustment gas G1 in one direction along the inclined surface D0, and then radially expands the flow direction of the temperature adjustment gas G1. Hereinafter, the one direction in which the temperature adjustment gas G1 flows before radially expanding in the discharge flow passage 56 is referred to as the "direction D1". This direction D1 extends along the inclined surface D0. For example, the direction D1 is inclined with respect to the surface Wa of the workpiece W when viewed from the Y-axis direction.

The shape of the nozzle (particularly the shape of the gas flow path 51) through which the temperature adjustment gas nozzle 46 radially ejects the temperature adjustment gas G1 onto the surface Wa of the workpiece W will be described with reference to FIG. 7. FIG. 7 shows the tip portion of the temperature adjustment gas nozzle 46 (the portion in the vicinity of the ejection port 52). FIG. 7(a) shows a view of the tip portion from below with the direction D1 aligned with the up-down direction of the page. FIG. 7(b) shows the surface facing the ejection port 52, and FIG. 7(c) shows a side view of the tip portion. The direction perpendicular to the Y-axis direction and direction D1 is defined as direction D2 (see FIGS. 7(b) and 7(c)).

The discharge flow path 56 circulates the temperature adjustment gas G1 flowing from the supply flow path 55 along the direction D1 and guides it to the discharge port 52. The discharge flow path 56 is composed of a pair of inclined surfaces 56a, 56b and a pair of wall surfaces 56c, 56d arranged opposite each other. The wall surfaces 56c, 56d may be composed of flat surface materials, each extending along the Y-axis direction and the direction D1, and being parallel to each other. The width of the discharge flow path 56 along the direction D2 is constant. In addition, the size of the width along the direction D2 is smaller than the inner diameter of the supply flow path 55. As an example, the width of the discharge flow path 56 along the direction D2 (the distance between the wall surfaces 56c, 56d) may be 70% or less of the inner diameter of the supply flow path 55, or may be 50% or less.

The inclined surfaces 56a and 56b are provided at both ends of the discharge flow path 56 in the Y-axis direction. One upstream end of the inclined surfaces 56a and 56b may be connected to the lower end of the supply flow path 55. In addition, one downstream end of each of the inclined surfaces 56a and 56b is connected to the discharge port 52 (both ends of the discharge port 52 in the Y-axis direction).

Each of the inclined surfaces 56a and 56b is inclined with respect to the direction D1. Specifically, the inclined surface 56a is inclined outward with respect to the direction D1 so that the distance between the inclined surface 56b and the inclined surface 56a increases as the inclined surface 56a approaches the discharge port 52. The inclined surface 56b is inclined outward with respect to the direction D1 so that the distance between the inclined surface 56a and the inclined surface 56b increases as the inclined surface 56a approaches the discharge port 52. Each of the inclined surfaces 56a and 56b is inclined in a direction (outward) away from the axis Ax of the temperature adjustment gas nozzle 46 as it moves from the connection portion with the supply flow path 55 toward the discharge port 52. The axis Ax of the temperature adjustment gas nozzle 46 is a virtual axis that runs along the direction D1 and passes through the center of the discharge port 52 when viewed from the direction D1. As described above, at least the inclined surfaces 56a and 56b of the discharge flow path 56 are formed in an inverted tapered shape in which the distance between them increases as the distance between them increases toward the discharge port 52. As a result, the width of the discharge flow path 56 in the Y-axis direction increases as it approaches the discharge port 52 so that the temperature adjustment gas G1 is discharged radially from the discharge port 52 in the Y-axis direction. Note that the inclination angles of the inclined surfaces 56a and 56b (inclination angles with respect to the direction D1) may be approximately the same.

The outlet 52 of the temperature adjustment gas nozzle 46 is formed to extend along one direction along the surface Wa. In this disclosure, a shape extending along one direction means a shape in which the width in one direction is larger than the width in a direction perpendicular to the one direction. In one example, the outlet 52 is shaped such that one direction is the longitudinal direction (long axis) and the direction perpendicular to the one direction is the short direction (short axis). Specifically, the outlet 52 is rectangular, a rounded rectangle with rounded ends in the longitudinal direction, an ellipse, or a shape similar to these. For example, as shown in Figures 7(a) to 7(c), the outlet 52 has a shape extending along the Y-axis direction (first direction). In the example shown in Figures 7(a) to 7(c), the outlet 52 is a rectangular slit extending at least along the Y-axis direction. As an example, the ratio of the length of the outlet 52 in one direction (the Y-axis direction) to the length in a direction perpendicular to the one direction (direction D2 perpendicular to the Y-axis direction in FIG. 7B) is 100:1 to 10:1. To this outlet 52, the temperature adjustment gas G1 is sent from the outlet flow path 56 as described above.

In the temperature adjustment gas nozzle 46 illustrated in Figures 7(a) to 7(c), the discharge port 52 is formed so as to be visible when viewed from the direction D1 (when viewed from downstream to upstream of the gas flowing along the direction D1). For example, as shown in Figures 7(b) and 7(c), the body 53 of the temperature adjustment gas nozzle 46 may be provided with a bottom surface 61 that faces the surface Wa of the workpiece W. The bottom surface may be a curved surface, and may be, for example, an arc shape in which the position corresponding to the axis Ax of the temperature adjustment gas nozzle 46 protrudes most downward, as shown in Figure 7(a). In this case, the discharge port 52 may be provided on the bottom surface 61. Also, the discharge port 52 is formed so as to extend from one end to the other end of the bottom surface 61 in the Y-axis direction when viewed from the direction D1.

The discharge port 52 may be formed so that both ends of the discharge port 52 in the Y-axis direction are visible when viewed from the Y-axis direction. To explain in more detail, the discharge port 52 is formed so that the ends 52a, 52b of the discharge port 52 that are connected to the inclined surfaces 56a, 56b of the discharge flow path 56 are visible when viewed from the Y-axis direction. Note that when the portions 52a, 52b are visible when viewed from the Y-axis direction, this means that the portion 52a is visible from one direction in the Y-axis direction, and the portion 52b is visible from the other direction in the Y-axis direction.

With the above configuration, the temperature adjustment gas G1 that flows into the gas flow path 51 of the temperature adjustment gas nozzle 46 passes through the discharge flow path 56 and is discharged radially from the discharge port 52. As a result, the temperature adjustment gas G1 is discharged onto the surface Wa from above the surface Wa. As an example, as shown in FIG. 6, the temperature adjustment gas nozzle 46 discharges the temperature adjustment gas G1 in a direction specified by multiple angles within a range of a predetermined angle (e.g., -45° to +45°) with respect to the axis Ax.

When the temperature control gas G1 flows through the supply flow passage 55 extending in the vertical direction, the direction of movement is changed by hitting the inclined surface (wall surface 56d) when moving to the discharge flow passage 56, and the gas moves toward the discharge port 52. The width of the discharge flow passage 56 along the direction D2 is made smaller than the inner diameter of the supply flow passage 55, so that the temperature control gas G1 can be guided toward the discharge port 52 at a more uniform speed regardless of the direction of the temperature control gas G1 when it spreads radially. In addition, the width of the discharge flow passage 56 along the direction D2 is approximately constant from the upstream side (the side connected to the supply flow passage 55) to the discharge port 52 within the discharge flow passage 56. In other words, the temperature control gas G1 is supplied to the rotating workpiece W, but if the width of the discharge flow passage 56 along the direction D2 is not constant, there is a concern that the temperature control gas G1 will be discharged in an unintended direction, resulting in temperature bias. Therefore, by making the width of the discharge flow path 56 along the direction D2 uniform, the diffusion of the temperature adjustment gas G1 is restricted in the Y-axis direction, and in particular, the diffusion of the temperature adjustment gas G1 in the X-axis direction perpendicular to the Y-axis direction is suppressed.

The shape of the outlet 52 of the temperature adjustment gas nozzle 46 is not limited to the above example. The opening surface including the opening edge of the outlet 52 may be formed such that the central portion of the opening surface in the Y-axis direction protrudes toward the surface Wa. More specifically, the central portion of the opening surface in the Y-axis direction may protrude toward the surface Wa compared to both ends of the opening surface in the Y-axis direction. In this case, each of both ends of the outlet 52 in the Y-axis direction is visible when viewed from the Y-axis direction.

The bottom surface 61 of the main body 53 is curved so that the central portion in the Y-axis direction protrudes from the ends of the inclined surfaces 56a and 56b of the discharge flow path 56 toward the surface Wa. In this example, the opening surface including the opening edge of the discharge port 52 is curved so that the central portion of the opening surface in the Y-axis direction protrudes toward the surface Wa. As an example, the bottom surface 61 is arc-shaped as shown in FIG. 7(a) when viewed from the X-axis direction (direction perpendicular to the Y-axis direction). As a result, the wall surfaces 56c and 56d are roughly fan-shaped. In other words, the temperature adjustment gas G1 supplied to the discharge flow path 56 spreads along the fan-shaped wall surfaces 56c and 56d in the Y-axis direction toward the discharge port 52.

In addition, instead of the bottom surface 61 being curved, the opening surface (bottom surface 61 of the main body portion 53) where the discharge port 52 is provided may be formed by combining flat surfaces when viewed from the X-axis direction. Even in this case, the central portion of the opening surface in the Y-axis direction (the portion corresponding to the upper base) can be shaped to protrude toward the surface Wa compared to both ends of the opening surface in the Y-axis direction.

The shape of the discharge port 52 may be different from the shape shown in FIG. 7, etc. For example, the discharge port 52 may be formed so that both ends of the discharge port 52 in the Y-axis direction are not visible when viewed from the Y-axis direction.

The distance (height) of the outlet 52 from the surface Wa of the workpiece W is set to be greater than the distance of the outlet 47b of the processing liquid nozzle 47 from the surface Wa of the workpiece W, which will be described later. In other words, the outlet 52 of the temperature control gas G1 is provided at a higher position than the outlet 47b of the processing liquid nozzle 47. The distance of the outlet 52 from the surface Wa of the workpiece W is the distance between the part of the outlet 52 closest to the workpiece W and the surface Wa. The standard for comparing the height positions of the outlet 52 and the outlet 47b is also the part of the outlet 52 closest to the workpiece W. By keeping the outlet 52 at a somewhat higher position as described above, the temperature control gas G1 discharged from the outlet 52 can be diffused more, and the liquid supplied to the surface Wa of the workpiece W can be prevented from being deformed by the influence of the temperature control gas G1.

In the configuration shown in FIG. 7 etc., the discharge port 52 and discharge flow path 56 (their three-dimensional shapes) are symmetrical with respect to a plane (X-Z plane) that passes through the axis Ax and is perpendicular to the direction in which the discharge port 52 extends. The temperature adjustment gas G1 discharged from the temperature adjustment gas nozzle 46 having the discharge port 52 and discharge flow path 56 is discharged so as to spread out toward both sides in the Y-axis direction from the axis Ax. As a result, the temperature adjustment gas G1 is discharged radially from the temperature adjustment gas nozzle 46 (discharge port 52), and the temperature adjustment gas G1 reaches an area on the surface Wa of the workpiece W that extends in the Y-axis direction.

As shown in FIG. 6, the temperature adjustment gas G1 is discharged radially, so that the width of the area (hereinafter referred to as the "reaching area AR") on the surface Wa where the temperature adjustment gas G1 reaches becomes larger in the Y-axis direction than the width of the outlet 52 in the Y-axis direction. In the Y-axis direction, the distance between one end of the reaching area AR and the axis Ax is larger than the distance between one end of the outlet 52 and the axis Ax, and the distance between the other end of the reaching area AR and the axis Ax is larger than the distance between the other end of the outlet 52 and the axis Ax. The width of the reaching area AR in the Y-axis direction is approximately equal to the distance between the point where the virtual line ILa extending along the inclined surface 58a intersects with the surface Wa and the point where the virtual line ILb extending along the inclined surface 58b intersects with the surface Wa. The width of the reaching area AR in the Y-axis direction may be smaller than the radius of the circular workpiece W. In one example, the width of the arrival area AR may be 0.4 to 0.8 times the radius of the workpiece W, 0.5 to 0.7 times, or 0.55 to 0.65 times.

Returning to FIG. 5, the drying gas nozzle 45 and the temperature adjustment gas nozzle 46 are connected to each other via the holding arm 44, so that when the holding arm 44 moves, the drying gas nozzle 45 and the temperature adjustment gas nozzle 46 move together. As shown in FIG. 5, the drying gas nozzle 45 and the temperature adjustment gas nozzle 46 are arranged at different positions in the X-axis direction (second direction). When viewed from the Y-axis direction, the distance in the X-axis direction between the arrival position on the surface Wa of the workpiece W of the drying gas G2 from the drying gas nozzle 45 and the arrival position (arrival area AR) on the surface Wa of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 is smaller than the distance in the X-axis direction between the outlet 45b of the drying gas nozzle 45 and the outlet 52 of the temperature adjustment gas nozzle 46. The drying gas nozzle 45 and the temperature adjustment gas nozzle 46 are configured.

In one example, when viewed from the Y-axis direction, an imaginary line IL1 extending in the direction of ejection of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 and an imaginary line IL2 extending in the direction of ejection of the dry gas G2 from the dry gas nozzle 45 intersect in the vicinity of the surface Wa (e.g., the surface Wa). As a result, when the nozzle unit 43 is located in a fixed position and the dry gas nozzle 45 and the temperature adjustment gas nozzle 46 eject the dry gas G2 and the temperature adjustment gas G1, respectively, when viewed from the Y-axis direction, the arrival area (arrival position) of the surface Wa of the dry gas G2 and the arrival area AR of the surface Wa of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 overlap each other.

As shown in FIG. 6, the drying gas nozzle 45 is arranged so as to overlap with the temperature adjustment gas nozzle 46 when viewed from the X-axis direction. In the example shown in FIG. 6, the position of the drying gas nozzle 45 in the Y-axis direction is a position that does not coincide (does not overlap) with the center (axis Ax) of the temperature adjustment gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the arrival area (arrival position) of the surface Wa of the drying gas G2 from the drying gas nozzle 45 is a position different from the center position of the arrival area AR of the surface Wa of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46. However, the position of the drying gas nozzle 45 in the Y-axis direction may be arranged to coincide with the center (axis Ax) of the temperature adjustment gas nozzle 46 in the Y-axis direction.

The temperature adjustment gas nozzle 46 and the dry gas nozzle 45 may be configured so that the flow rate of the temperature adjustment gas G1 discharged from the outlet 52 of the temperature adjustment gas nozzle 46 is smaller than the flow rate of the dry gas G2 discharged from the outlet 45b of the dry gas nozzle 45. For example, the temperature adjustment gas nozzle 46 and the dry gas nozzle 45 are each supplied with gas at approximately the same flow rate (flow rate per unit time), and the temperature adjustment gas nozzle 46 and the dry gas nozzle 45 are each configured so that the opening area of the outlet 52 is larger than the opening area of the outlet 45b. Alternatively, the supply mechanisms 41A and 41B may be controlled by the control device 100 so that the flow rate of the temperature adjustment gas G1 supplied from the supply mechanism 41A to the temperature adjustment gas nozzle 46 is smaller than the flow rate of the dry gas G2 supplied from the supply mechanism 41B to the dry gas nozzle 45.

The temperature adjustment gas nozzle 46 and the dry gas nozzle 45 may be arranged so that the temperature adjustment gas G1 is easily diffused after being discharged. For example, the temperature adjustment gas nozzle 46 and the dry gas nozzle 45 may be arranged so that, as viewed from the direction in which the discharge port 52 extends, the distance between the discharge port 52 along the discharge direction of the temperature adjustment gas G1 (along the imaginary line IL1 in FIG. 5) and the surface Wa is longer than the distance between the discharge port 45b along the discharge direction of the dry gas G2 (along the imaginary line IL2 in FIG. 5) and the surface Wa. Even when gas is supplied at approximately the same flow rate (flow rate per unit time) from two types of gas nozzles with different purposes, the pressure of the gas applied to the surface Wa (more specifically, the liquid surface of the processing liquid on the surface Wa) may be adjusted to a degree according to the processing purpose depending on the configuration (arrangement) of the two gas nozzles. Specifically, when supplying the temperature adjustment gas G1, the distance between the nozzle and the surface can be increased to weaken the pressure of the temperature adjustment gas G1 to a level that does not disturb the liquid surface of the processing liquid or blow away the processing liquid so that the surface Wa of the workpiece W is not exposed. On the other hand, when supplying the drying gas G2, the distance between the nozzle and the surface can be decreased to a level that creates a flow in the processing liquid or blows away the processing liquid so as to form a drying region D (described in detail later) in which the surface Wa of the workpiece W is exposed.

When the same type of gas is used for the temperature adjustment gas G1 and the dry gas G2, the gas may share a common supply source. Specifically, one flow path connected to one gas supply source may be branched into two flow paths. Each of the two flow paths may be provided with a valve that can be switched between open and closed states by the control device 100. In addition, one flow path may be connected to a gas flow path 42a that guides the temperature adjustment gas G1 to the outlet 52 of the temperature adjustment gas nozzle 46, and the other flow path may be connected to a gas flow path 42b that guides the dry gas G2 to the outlet 45b of the dry gas nozzle 45.

[Treatment liquid nozzle]
The processing liquid nozzle 47 is configured to eject the processing liquid L2 toward the surface Wa of the workpiece W. The processing liquid nozzle 47 ejects the processing liquid L2, for example, from above the surface Wa in a direction different from the perpendicular to the surface Wa. For example, when viewed from the Y-axis direction, the ejection direction of the processing liquid L2 from the processing liquid nozzle 47 is inclined with respect to the surface Wa, and when viewed from the X-axis direction, the ejection direction is approximately perpendicular to the surface Wa.

In the example shown in FIG. 5, the treatment liquid nozzle 47 is connected to the holding arm 44 via the holder 48. The holder 48 is connected to the side of the vertical part 44b of the holding arm 44 (the surface opposite to the surface facing the temperature adjustment gas nozzle 46), and the treatment liquid nozzle 47 is attached below it. The treatment liquid nozzle 47 is connected to a treatment liquid flow path 42c through which the treatment liquid L2 supplied from the supply mechanism 41C flows. The treatment liquid flow path 42c may be provided, for example, inside the horizontal part 44a of the holding arm 44, outside the holding arm 44, and inside the holder 48. When the treatment liquid flow path 42c is provided outside the holding arm 44, a coating material or the like that covers the treatment liquid flow path 42c may be provided. The treatment liquid nozzle 47 is provided with a treatment liquid flow path 47a that extends along the discharge direction of the treatment liquid L2. The treatment liquid flow path 47a is continuous from the end of the treatment liquid flow path 42c provided in the holder 48. Furthermore, the processing liquid nozzle 47 includes an outlet 47b (processing liquid outlet) that outlets the processing liquid L2 supplied through the processing liquid flow path 47a toward the surface Wa. The outlet 47b is provided, for example, on the lower end surface of the processing liquid nozzle 47 and opens at the lower end surface. The shape (contour) of the outlet 47b may be circular when viewed from the outlet direction of the processing liquid L2.

[Second Processing Liquid Nozzle]
The nozzle unit 43 has a second processing liquid nozzle 49 in addition to the above three nozzles. The second processing liquid nozzle 49 is configured to discharge a processing liquid toward the surface Wa of the workpiece W. The processing liquid discharged from the second processing liquid nozzle 49 may be the same type as the processing liquid L2 discharged from the processing liquid nozzle 47, or may be a processing liquid different from the processing liquid L2. As an example, a rinsing liquid (cleaning liquid) may be used as the processing liquid discharged from the second processing liquid nozzle 49, similar to the processing liquid L2. Furthermore, as an example, pure water may be selected as the rinsing liquid (cleaning liquid) used as the processing liquid L2, and, for example, an aqueous solution of a surfactant may be selected as the processing liquid discharged from the second processing liquid nozzle 49.

The second processing liquid nozzle 49 may eject processing liquid from above the surface Wa in a direction substantially perpendicular to the surface Wa. When viewed from both the Y-axis direction and the X-axis direction, the ejection direction of the processing liquid from the second processing liquid nozzle 49 is substantially perpendicular to the surface Wa.

In the example shown in FIG. 5, the second processing liquid nozzle 49 is provided at the lower end of the vertical portion 44b of the holding arm, similar to the drying gas nozzle 45. As shown in FIG. 5 and FIG. 6, the drying gas nozzle 45 and the second processing liquid nozzle 49 are aligned along the Y-axis direction.

The second processing liquid nozzle 49 has the same shape as the dry gas nozzle 45. That is, the second processing liquid nozzle 49 is provided with a processing liquid flow path extending vertically, continuing from the processing liquid flow path 42d that passes through the horizontal portion 44a of the holding arm 44 and extends to the lower end of the vertical portion 44b. The second processing liquid nozzle 49 includes an outlet 49b that outlets the processing liquid supplied to the processing liquid flow path through the processing liquid flow path 42d toward the surface Wa. The outlet 49b is provided, for example, on the lower end surface of the second processing liquid nozzle 49 and opens at the lower end surface. The shape (contour) of the outlet 49b may be circular when viewed from the outlet direction of the processing liquid (the Z-axis direction in the figure).

The processing liquid nozzle 47 and the temperature adjustment gas nozzle 46 are connected to each other via the holding arm 44 and the holder 48, so when the holding arm 44 moves, the processing liquid nozzle 47 and the temperature adjustment gas nozzle 46 move together. In this embodiment, the drying gas nozzle 45, the temperature adjustment gas nozzle 46, and the processing liquid nozzle 47 are connected to each other via the holding arm 44, etc., so these three nozzles move together as the holding arm 44 moves. As shown in FIG. 5, in the X-axis direction, the temperature adjustment gas nozzle 46, the drying gas nozzle 45, the second processing liquid nozzle 49, and the processing liquid nozzle 47 are arranged at different positions. For example, when viewed from the Y-axis direction, the temperature adjustment gas nozzle 46, the drying gas nozzle 45, the second processing liquid nozzle 49, and the processing liquid nozzle 47 are arranged in this order. However, as shown in FIG. 6, when viewed from the X-axis direction, the dry gas nozzle 45 and the second processing liquid nozzle 49 are arranged side by side on either side of the axis Ax, and are therefore provided at a different position from the processing liquid nozzle 47, which is provided on the axis Ax.

The processing liquid nozzle 47 and the temperature adjustment gas nozzle 46 are configured so that, as viewed from the Y-axis direction, the distance in the X-axis direction between the arrival position on the surface Wa of the workpiece W of the processing liquid L2 from the processing liquid nozzle 47 and the arrival position (arrival area AR) on the surface Wa of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 is smaller than the distance in the X-axis direction between the outlet 47b of the processing liquid nozzle 47 and the outlet 52 of the temperature adjustment gas nozzle 46. Note that a similar relationship between the arrival position and the outlet also holds between the processing liquid nozzle 47 and the dry gas nozzle 45 (and the second processing liquid nozzle 49).

In one example, when viewed from the Y-axis direction, a virtual line IL3 extending in the discharge direction of the processing liquid L2 from the processing liquid nozzle 47 and a virtual line IL1 extending in the discharge direction of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 may intersect in the vicinity of the surface Wa (for example, on the surface Wa). As a result, when the nozzle unit 43 is located at a fixed position, when viewed from the Y-axis direction, the arrival area (arrival position) of the processing liquid L2 from the processing liquid nozzle 47 and the arrival area AR of the surface Wa of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 may overlap each other. In this embodiment, the nozzle unit 43 is configured so that, when viewed from the Y-axis direction, in addition to the above virtual lines IL1 and IL3, a virtual line IL2 extending in the discharge direction of the dry gas G2 from the dry gas nozzle 45 intersect each other at one point on the surface Wa. Note that the processing liquid from the second processing liquid nozzle 49 is also discharged along the virtual line IL2 like the dry gas G2.

The drying gas nozzle 45 and the processing liquid nozzle 47 are configured so that the inclination of the discharge direction of the processing liquid L2 from the processing liquid nozzle 47 with respect to the surface Wa is smaller than the inclination of the discharge direction of the drying gas G2 from the drying gas nozzle 45 with respect to the surface Wa when viewed from the Y-axis direction. For example, when viewed from the Y-axis direction, the angle (an angle of 90 degrees or less) between the imaginary line IL3 extending in the discharge direction of the processing liquid L2 and the surface Wa is smaller than the angle (an angle of 90 degrees or less) between the imaginary line IL2 extending in the discharge direction of the drying gas G2 and the surface Wa. Note that a similar magnitude relationship is also established for the inclination of the discharge direction of the drying gas G2 and the discharge direction of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 with respect to the surface Wa.

6, the processing liquid nozzle 47 and the dry gas nozzle 45 are disposed at different positions in the Y-axis direction as described above. Also, as viewed from the X-axis direction, the reach area (reaching position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 and the reach area (reaching position) on the surface Wa of the dry gas G2 from the dry gas nozzle 45 may be different from each other. However, unlike the example shown in FIG. 6, the processing liquid nozzle 47 and the dry gas nozzle 45 may be disposed at approximately the same position in the Y-axis direction. Also, as viewed from the X-axis direction, the reach area (reaching position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 and the reach area (reaching position) on the surface Wa of the dry gas G2 from the dry gas nozzle 45 may be approximately the same as each other.

As shown in FIG. 6, the processing liquid nozzle 47 may be arranged to overlap with the temperature adjustment gas nozzle 46 when viewed from the X-axis direction. For example, the position of the processing liquid nozzle 47 in the Y-axis direction may approximately coincide with the center (axis Ax) of the temperature adjustment gas nozzle 46 in the Y-axis direction. In this case, when viewed from the X-axis direction, the reach area (reach position) on the surface Wa of the processing liquid L2 from the processing liquid nozzle 47 approximately coincides with the center of the reach area AR of the surface Wa of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46.

[Drive unit]
The drive unit 50 is configured to move the holding arm 44 in the height direction and the horizontal direction (the direction along the surface Wa of the workpiece W) based on a signal from the control device 100. The drive unit 50 is connected to the base end of the horizontal part 44a of the holding arm 44, for example, as described above. The drive unit 50 may include a linear actuator that displaces the holding arm 44 in the direction in which the discharge port 52 of the temperature adjustment gas nozzle 46 extends (Y-axis direction), and a lifting actuator that displaces the holding arm 44 in the Z-axis direction. Note that the drive unit 50 does not have to include a linear actuator that displaces the holding arm 44 in the X-axis direction.

As the drive unit 50 displaces the holding arm 44, the drying gas nozzle 45, the temperature adjustment gas nozzle 46, the processing liquid nozzle 47, and the second processing liquid nozzle 49 move together. In one example, the drive unit 50 displaces the holding arm 44 horizontally (in the Y-axis direction) so that the direction in which the arrival area AR (area to be reached) of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 extends is along the radial direction of the workpiece W held by the substrate holding unit 20. In this case, the arrival position (location to be reached) of the temperature adjustment gas G1 from the drying gas nozzle 45 and the arrival position (location to be reached) of the processing liquid L2 from the processing liquid nozzle 47 also displace in the radial direction of the workpiece W.

<Cover member>
Returning to Fig. 4, the cover member 70 is provided around the substrate holding part 20. The cover member 70 includes a cup body 71, a drainage port 72, and an exhaust port 73. The cup body 71 is configured as a liquid collection container that receives the processing liquids L1, L2 supplied to the workpiece W for processing the workpiece W. The drainage port 72 is provided at the bottom of the cup body 71, and is configured to discharge the waste liquid collected by the cup body 71 to the outside of the liquid processing unit U1.

The exhaust port 73 is provided at the bottom of the cup body 71. The exhaust port 73 is provided with an exhaust section V2 configured to exhaust gas from the cup body 71 by operating based on a signal from the control device 100. Therefore, the downward flow that flows around the workpiece W is discharged to the outside of the liquid processing unit U1 through the exhaust port 73 and the exhaust section V2. The exhaust section V2 may be, for example, a damper whose exhaust volume can be adjusted according to the opening degree. By adjusting the exhaust volume from the cup body 71 using the exhaust section V2, the temperature, pressure, humidity, etc. within the cup body 71 can be controlled.

Blower B is disposed above the substrate holder 20 and cover member 70 in the liquid processing unit U1. Blower B is configured to form a downward flow toward the cover member 70 based on a signal from the control device 100. Blower B may be controlled to constantly form a downward flow during liquid processing of the workpiece W.

(Control device)
The control device 100 is configured to partially or entirely control the elements of the coating and developing apparatus 2. The control device 100 controls the liquid processing unit U1 including at least the nozzle unit 43 and the substrate holding unit 20. As shown in FIG. 8, the control device 100 has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a division of the functions of the control device 100 into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the control device 100 is divided into such modules. Each functional module is not limited to one realized by the execution of a program, and may be realized by a dedicated electric circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the same.

The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the coating and developing apparatus 2. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

The memory unit M2 is configured to store various data. For example, the memory unit M2 may store a program read from the recording medium RM by the reading unit M1, setting data input by an operator via an external input device (not shown), and the like. The program may be configured to operate each part of the coating and developing apparatus 2.

The processing unit M3 is configured to process various data. For example, the processing unit M3 may generate signals for operating the liquid processing unit U1, the heat processing unit U2, etc., based on the various data stored in the memory unit M2.

The instruction unit M4 is configured to transmit the operation signal generated by the processing unit M3 to various devices.

The hardware of the control device 100 may be configured, for example, by one or more control computers. As shown in FIG. 9, the control device 100 includes a circuit C1 as a hardware configuration. The circuit C1 may be configured by electrical circuitry. The circuit C1 may include a processor C2, a memory C3, a storage C4, a driver C5, and an input/output port C6.

The processor C2 cooperates with at least one of the memory C3 and the storage C4 to execute programs and input and output signals via the input/output port C6, thereby configuring each of the functional modules described above. The memory C3 and the storage C4 function as the memory unit M2. The driver C5 is a circuit that drives each of the various devices of the coating and developing apparatus 2. The input/output port C6 inputs and outputs signals between the driver C5 and the various devices of the coating and developing apparatus 2 (e.g., the liquid processing unit U1, the heat processing unit U2, etc.).

The coating and developing apparatus 2 may include one control device 100, or may include a controller group (control unit) composed of multiple control devices 100. When the coating and developing apparatus 2 includes a controller group, each of the above-mentioned functional modules may be realized by one control device 100, or may be realized by a combination of two or more control devices 100. When the control device 100 is composed of multiple computers (circuits C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or may be realized by a combination of two or more computers (circuits C1). The control device 100 may have multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or may be realized by a combination of two or more processors C2.

[Substrate Processing Method]
10 to 13, a liquid processing method for a workpiece W will be described as an example of a substrate processing method. Fig. 10 is a flow chart showing an example of the liquid processing method.

First, the control device 100 controls each part of the coating and developing apparatus 2 to process the workpiece W in the processing modules PM1 to PM3, thereby forming a resist film R on the surface Wa of the workpiece W in the coating and developing apparatus 2 (step S11). Next, the control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the processing module PM3 to the exposure device 3 by the transport arm A7 or the like. Next, another control device different from the control device 100 controls the exposure device 3 to expose the resist film R formed on the surface Wa of the workpiece W in a predetermined pattern by the exposure device 3 (step S12).

The control device 100 then controls each part of the coating and developing apparatus 2 to transport the workpiece W from the exposure device 3 to the liquid processing unit U1 of the processing module PM4 using the transport arm A5 or the like. As a result, the workpiece W is held by the substrate holding part 20 with its front surface Wa facing upward. Next, the control device 100 controls the supply part 30 to supply the processing liquid L1 (developing liquid) to the front surface Wa of the workpiece W, i.e., the top surface of the resist film R (step S13).

In step S13, the control device 100 may control the supply unit 30 to move the nozzle 33 horizontally above the non-rotating workpiece W, while causing the supply unit 30 to supply the processing liquid L1 from the nozzle 33 toward the surface Wa of the workpiece W. In this case, as illustrated in FIG. 11(a), the processing liquid L1 is sequentially supplied from one end of the workpiece W to the other end. Alternatively, the control device 100 may control the substrate holding unit 20 and the supply unit 30 to rotate the workpiece W by the substrate holding unit 20, while moving the nozzle 33 horizontally above the workpiece W, while causing the supply unit 30 to supply the processing liquid L1 from the nozzle 33 toward the surface Wa of the workpiece W. In this case, the processing liquid L1 is supplied in a spiral shape from the center to the periphery of the workpiece W, or from the periphery to the center of the workpiece W. Step S13 creates a state in which the processing liquid L1 is retained so as to cover the entire upper surface of the resist film R on the surface Wa of the workpiece W.

Next, the control device 100 causes the supply unit 40 to supply the temperature adjustment gas G1 from the outlet 52 of the temperature adjustment gas nozzle 46 to the surface Wa of the workpiece W, i.e., the upper surface of the processing liquid L1 (step S14). In step S14, the control device 100 may cause the temperature adjustment gas nozzle 46 to eject the temperature adjustment gas G1 from the outlet 52 toward the surface Wa while rotating the workpiece W using the substrate holding unit 20.

At this time, it is preferable that the processing liquid L1 on the surface Wa of the workpiece W is not blown away by the temperature adjustment gas G1. In other words, it is preferable that the surface Wa of the workpiece W while the processing liquid L1 is being supplied is not exposed by the spraying of the temperature adjustment gas G1. By supplying the temperature adjustment gas G1 while the processing liquid L1 is stagnating on the surface Wa of the workpiece W, processing with the processing liquid L1 can be continued while adjusting the surface temperature of the workpiece W by supplying the temperature adjustment gas G1. More specifically, the temperature distribution on the surface Wa of the workpiece W is adjusted by adjusting the temperature of a portion of the surface Wa of the workpiece W to which the temperature adjustment gas G1 is supplied.

12, the temperature adjustment gas G1 is sprayed onto an area including at least the center of the surface Wa of the workpiece W. For example, as shown in FIG. 12, the control device 100 uses the drive unit 50 of the nozzle unit 43 to position the temperature adjustment gas nozzle 46 so that the arrival area AR of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 is aligned along the radial direction of the workpiece W, and the longitudinal direction of the arrival area AR (the direction in which the outlet 52 extends) is the radial direction extending from the center CP of the workpiece W (the direction of the line CR in the example shown in FIG. 12). In the initial state, for example, the temperature adjustment gas nozzle 46 may be positioned so that the longitudinal end of the arrival area AR overlaps with the center CP. In this state, the control device 100 rotates the workpiece W by the substrate holding unit 20. Then, the control device 100 controls the supply unit 40 so that the temperature adjustment gas G1 is discharged from the outlet 52 of the temperature adjustment gas nozzle 46 while rotating the workpiece W by the substrate holding unit 20.

As described above, the temperature adjusting gas G1 from the outlet 52 of the temperature adjusting gas nozzle 46 is discharged onto the rotating workpiece W, so that the direction in which the arrival area AR of the temperature adjusting gas G1 on the surface Wa of the workpiece W extends is perpendicular to the rotation direction of the workpiece W (direction R1 or direction R2 shown in the figure). In this case, in a top view (as viewed from the Z-axis direction), the direction from the outlet 52 toward the arrival area AR may be the forward direction relative to the rotation direction of the workpiece W (the workpiece W may rotate in direction R1). When the relationship between the rotation direction of the workpiece W and the discharge direction of the temperature adjusting gas G1 is the forward direction, the discharge of the temperature adjusting gas G1 prevents the resist film R on the surface Wa of the workpiece W from being disturbed. Note that, in a top view, the direction from the outlet 52 toward the arrival area AR may be the reverse direction relative to the rotation direction of the workpiece W (the workpiece W may rotate in direction R2).

In this state, the nozzle unit 43 containing the temperature adjustment gas G1 can be moved in the radial direction extending from the center CP of the workpiece W (the direction of the line CR, i.e., the Y-axis direction) to adjust the discharge range of the temperature adjustment gas G1.

By ejecting the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 as described above, the temperature adjustment gas G1 is supplied onto the surface Wa within a range having a radius approximately equal to the longitudinal width of the arrival area AR.

When the temperature adjustment gas nozzle 46 is positioned at the discharge position, the direction in which the arrival area AR of the temperature adjustment gas G1 from the discharge port 52 extends does not have to be perpendicular to the rotation direction of the workpiece W, but at least intersects with it. In other words, the direction in which the arrival area AR extends does not have to be perpendicular to the radial direction of the workpiece W.

The spraying of the temperature adjusting gas G1 onto the processing liquid L1 may be continued during the development period of the resist film R. The spraying of the temperature adjusting gas G1 onto the processing liquid L1 may be continued, for example, from when the processing liquid L1 is supplied onto the surface Wa of the workpiece W until development is completed or until the start of the subsequent process. In step S14, the control device 100 may control the exhaust section V2 to supply the temperature adjusting gas G1 onto the surface Wa of the workpiece W while exhaust from within the cup body 71 is stopped or while exhaust from within the cup body 71 is continued.

Next, the control device 100 controls the substrate holding unit 20 and the supply unit 40 to supply the processing liquid L2 (rinsing liquid) from the processing liquid nozzle 47 to the surface Wa of the rotating workpiece W, i.e., the upper surface of the processing liquid L1 (step S15). As a result, as shown in FIG. 13(a), the dissolved resist from the resist film R that has dissolved in the reaction with the processing liquid L1 is washed away (discharged) from the surface Wa of the workpiece W by the processing liquid L2 together with the processing liquid L1. In this way, a resist pattern RP is formed on the surface Wa of the workpiece W.

12 shows a supply position 47' where the processing liquid from the processing liquid nozzle 47 is supplied to the surface Wa of the workpiece W when the nozzle unit 43 is arranged so that the arrival area AR of the temperature adjustment gas G1 from the temperature adjustment gas nozzle 46 coincides with the radial direction (line CR direction). Similarly, FIG. 12 also shows a supply position 45' where the dry gas from the dry gas nozzle 45 is supplied to the surface Wa of the workpiece W, and a supply position 49' where the processing liquid from the second processing liquid nozzle 49 is supplied to the surface Wa of the workpiece W. In the case of the above-mentioned configuration of the nozzle unit 43, the supply positions 45', 47', and 49' overlap with the arrival area AR of the temperature adjustment gas G1. Therefore, in a state where the nozzle unit 43 is arranged based on the arrival area AR of the temperature adjustment gas G1, the processing liquid and the drying gas can be discharged to positions along the radial direction (line CR direction) in the same manner as the arrival area AR.

Before starting to discharge the processing liquid L2 in step S15, the control device 100 displaces the processing liquid nozzle 47 (holding arm 44) by the drive unit 50 so that the arrival area of the processing liquid L2 on the surface Wa from the processing liquid nozzle 47 is located at the center CP of the workpiece W. In this embodiment, the drive unit 50 displaces the processing liquid nozzle 47 in the radial direction of the workpiece W without displacing it in a direction intersecting the radial direction of the workpiece W. In step S15, the control device 100 may control the exhaust unit V2 to cause the supply unit 40 to supply the processing liquid L2 to the surface Wa of the workpiece W while continuing to exhaust air from within the cup body 71. The amount of exhaust air from within the cup body 71 in step S15 may be set to be greater than the amount of exhaust air from within the cup body 71 in step S14.

Next, the control device 100 causes the supply unit 40 to supply the dry gas G2 from the dry gas nozzle 45 to the surface Wa of the rotating workpiece W, i.e., the upper surface of the processing liquid L2 remaining on the surface Wa (step S16). At the start of ejection of the dry gas G2 in step S16, the control device 100 may move the holding arm 44 horizontally (in the Y-axis direction) by the drive unit 50 so that the arrival position of the dry gas G2 approximately coincides with the center CP of the workpiece W. When the arrival position of the processing liquid L2 on the surface Wa from the processing liquid nozzle 47 and the arrival position of the dry gas G2 on the surface Wa from the dry gas nozzle 45 approximately coincide with each other in the Y-axis direction, the movement of the holding arm 44 may be omitted. In one example of the arrangement relationship between the dry gas nozzle 45 and the processing liquid nozzle 47 described above, the arrival position of the dry gas G2 and the arrival position of the processing liquid L2 approximately coincide with each other at least in the X-axis direction (see FIG. 5). Therefore, each time the supply of the processing liquid L2 is switched to the supply of the drying gas G2, there is no need to change the position of the holding arm 44, at least in the X-axis direction, and a series of processes can be performed by moving only in the Y-axis direction.

In step S16, the control device 100 may move the holding arm 44 horizontally (in the Y-axis direction) by the drive unit 50 so that the dry gas nozzle 45 moves from the center of the workpiece W to the periphery above the workpiece W. As a result, the processing liquid L2 present in approximately the center of the workpiece W is blown to the periphery and evaporated, and a dry area D is formed in the center of the workpiece W as shown in FIG. 13(b). Here, the dry area D refers to the area in which the surface Wa of the workpiece W is exposed due to the evaporation of the processing liquid L2, but also includes the case where very small (e.g., micron-order) droplets are attached to the surface Wa. This dry area D spreads from the center of the workpiece W toward the periphery due to the centrifugal force generated by the rotation of the workpiece W. After the dry area D is formed, the supply of dry gas G2 from the dry gas nozzle 45 may be stopped.

In step S16, the control device 100 may control the exhaust section V2 to supply dry gas G2 to the surface Wa of the workpiece W while continuing exhaust from within the cup body 71. The amount of exhaust from within the cup body 71 in step S16 may be set to be greater than the amount of exhaust from within the cup body 71 in step S14.

After the supply of the drying gas G2 from the drying gas nozzle 45 is stopped, the processing liquid L2 remaining on the surface Wa of the workpiece W spreads from the center of the workpiece W toward the periphery due to the centrifugal force generated by the rotation of the workpiece W. Thereafter, when the processing liquid L2 on the surface Wa of the workpiece W is shaken off from the periphery of the workpiece W, the drying of the workpiece W is completed. This completes the liquid processing of the workpiece W.

In the above example, the case where only the processing liquid L2 is used has been described, but a processing liquid may be used instead of the processing liquid L2. Also, a processing liquid may be used only in some of the steps that use the processing liquid L2. When a processing liquid is used, the processing liquid may be supplied from the second processing liquid nozzle 49 instead of ejecting the processing liquid L2 from the processing liquid nozzle 47.

[Modification of the nozzle unit]
A nozzle unit according to a modified example will be described with reference to Figures 14 and 15. A nozzle unit 43A according to the modified example is different from the nozzle unit 43 in the following respects. That is, the processing liquid nozzle 47 is provided on the holding arm 44, not on the holder 48. In the nozzle unit 43A, the processing liquid nozzle 47 is provided at the position where the second processing liquid nozzle 49 is provided in the nozzle unit 43.

The nozzle unit 43A also has a configuration for discharging the temperature adjustment gas G1, drying gas G2, and processing liquid L2 supplied from the supply mechanisms 41A to 41C onto the surface Wa of the workpiece W. As shown in Figures 14 and 15, the nozzle unit 43A also includes a holding arm 44, a drying gas nozzle 45, a temperature adjustment gas nozzle 46, a processing liquid nozzle 47, and a drive unit 50 that moves these nozzles by moving the holding arm 44.

The holding arm 44 includes a horizontal portion 44a and a vertical portion 44b, similar to the holding arm 44 of the nozzle unit 43. The vertical portion 44b extends downward (in the -Z direction) from the tip of the horizontal portion 44a toward the surface Wa of the workpiece W. A gas flow path 42a for circulating the temperature adjustment gas G1 supplied from the supply mechanism 41A may be provided inside the holding arm 44. Furthermore, a gas flow path 42b for circulating the drying gas G2 supplied from the supply mechanism 41B, and a processing liquid flow path 42c for circulating the processing liquid L2 supplied from the supply mechanism 41C may be provided inside the holding arm 44.

The drying gas nozzle 45 is provided at the lower end of the vertical portion 44b of the holding arm 44, similar to the drying gas nozzle 45 of the nozzle unit 43. The drying gas nozzle 45 is configured to eject the drying gas G2 in a direction approximately perpendicular to the surface Wa of the workpiece W.

The temperature adjustment gas nozzle 46 is configured to discharge the temperature adjustment gas G1 toward the surface Wa of the workpiece W, similar to the temperature adjustment gas nozzle 46 of the nozzle unit 43. The temperature adjustment gas nozzle 46 discharges the temperature adjustment gas G1 uniformly in a radial discharge range. To achieve this, the nozzle 46 may have a supply flow passage 55 that extends approximately vertically inside the main body 53, and a discharge flow passage 56 that moves the temperature adjustment gas G1 radially from the lower end of the supply flow passage 55. The internal configuration of the main body 53 may also be similar to that of the temperature adjustment gas nozzle 46 of the nozzle unit 43.

The processing liquid nozzle 47 may eject processing liquid from above the surface Wa in a direction approximately perpendicular to the surface Wa, similar to the drying gas nozzle 45. When viewed from both the Y-axis direction and the X-axis direction, the ejection direction of the processing liquid from the processing liquid nozzle 47 is approximately perpendicular to the surface Wa.

In the example shown in FIG. 14 and FIG. 15, the processing liquid nozzle 47 is provided at the lower end of the vertical portion 44b of the holding arm, similar to the drying gas nozzle 45. As shown in FIG. 15, the drying gas nozzle 45 and the processing liquid nozzle 47 may be aligned along the Y-axis direction.

The processing liquid nozzle 47 may have a shape similar to that of the dry gas nozzle 45. That is, the processing liquid nozzle 47 is provided with a processing liquid flow path extending vertically, continuing from the processing liquid flow path 42c that passes through the horizontal portion 44a of the holding arm 44 and extends to the lower end of the vertical portion 44b. The processing liquid nozzle 47 includes an outlet 47b that outlets the processing liquid supplied to the processing liquid flow path through the processing liquid flow path 42c toward the surface Wa. The outlet 47b is provided, for example, on the lower end surface of the processing liquid nozzle 47 and opens at the lower end surface. The shape (contour) of the outlet 47b may be circular when viewed from the outlet direction of the processing liquid (the Z-axis direction in the figure).

When using the nozzle unit 43A, liquid processing can be performed on the workpiece W using the substrate processing method described above, just like the nozzle unit 43 described above.

[Effects of the embodiment]
In the nozzle units 43 and 43A described above, the temperature adjusting gas G1 is radially discharged in the first direction from the discharge port 52 extending in the first direction (Y-axis direction) of the temperature adjusting gas nozzle 46. Therefore, the temperature adjusting gas G1 is supplied from the temperature adjusting gas nozzle 46 to a region of the surface Wa of the workpiece W that is longer than the width of the discharge port 52 in the first direction. This makes it possible to adjust the temperature of the region to which the temperature adjusting gas G1 is supplied in the liquid processing, thereby making it possible to improve the uniformity of the temperature distribution within the surface of the workpiece W. In addition, this makes it possible to improve, for example, the uniformity of the line width (CD) of the film formed on the workpiece W after processing.

In the development process, specifically, if the temperature adjustment gas G1 is not used between the supply of the developer to the surface Wa of the workpiece W and the supply of the rinse liquid, heat dissipation from the periphery of the workpiece W is likely to be promoted due to the influence of exhaust gas from the housing. Therefore, a temperature difference may occur within the surface of the workpiece W, and as a result, the development speed may differ within the surface, and the line width of the resist pattern within the workpiece W may vary. In contrast, in the nozzle unit 43 according to the above embodiment, the atmosphere near the top surface of the developer in the part to which the temperature adjustment gas G1 is supplied is replaced, and the developer is vaporized more in that part than in other parts, and the cooling is promoted by the heat of vaporization. In addition, since the temperature adjustment gas G1 is supplied from the temperature adjustment gas nozzle 46 with a certain degree of pressure, the gas after discharge can be cooled by expansion (adiabatic expansion cooling). The action of these temperature adjustment gases G1 makes it possible to locally cool the surface Wa of the workpiece W, and the temperature distribution can be adjusted. In addition, as a result, it is possible to reduce the variation in the line width of the resist pattern within the workpiece W.

The temperature adjustment gas nozzle 46 may be configured to be removable. By making the temperature adjustment gas nozzle 46 removable, for example, it is possible to flexibly adjust the layout within the device.

The gas flow path 51 as a temperature adjustment gas flow path may include a supply flow path 55 and a discharge flow path 56 connected to the downstream side of the supply flow path 55. The supply flow path 55 may be a linear flow path extending in a predetermined direction and having a constant inner diameter. The discharge flow path 56 may be a flow path that intersects with the extension direction of the supply flow path 55 and extends along an inclined surface including the first direction. In this case, the height extending in a direction perpendicular to the first direction may be smaller than the inner diameter. By having the above shape, the flow rate of the liquid is suppressed when flowing from the supply flow path 55 to the discharge flow path 56, and the temperature adjustment gas can be spread radially more uniformly.

The wall surface 56d serving as the bottom surface of the discharge flow path 56 may be formed by a surface material extending along an inclined surface. The end of the supply flow path 55 may be connected to the discharge flow path 56 at a position opposite the surface material constituting the wall surface 56d of the discharge flow path 56. When connected in such an arrangement, the flow rate of the liquid when the temperature adjustment gas G1 moves from the supply flow path 55 to the discharge flow path 56 is more reliably suppressed.

The discharge flow path 56 may have a uniform length from the connection position with the supply flow path 55 to each position of the discharge port 52, and the discharge port 52 may be formed along a curved surface in which the inner side protrudes in the discharge direction from the end in the width direction. By making the distance to each position of the discharge port in the discharge flow path uniform, it is possible to improve the uniformity of the flow rate of the temperature adjustment gas within the discharge flow path. Note that the curved surface in which the inner side protrudes in the discharge direction may include, for example, unevenness or corners. In other words, it is sufficient that the surface is curved overall, and the fine shape is not particularly limited.

The discharge flow path 56 may be fan-shaped when viewed from a direction perpendicular to the inclined surface, and the temperature adjustment gas discharge port may be formed along an arc of the fan shape. With such a shape, it is possible to further improve the uniformity of the flow rate of the temperature adjustment gas within the discharge flow path.

The outlet 52 may be located higher than the outlet 47b (treatment liquid outlet). When the outlet 52 that discharges the temperature adjustment gas G1 is located higher than the outlet 47b, the temperature adjustment gas G1 can be discharged more uniformly onto the surface Wa of the workpiece W.

The driving unit 50 may be configured to move the temperature adjustment gas nozzle 46, the drying gas nozzle 45, and the processing liquid nozzle 47 along the first direction depending on the type of fluid to be discharged, to supply the fluid to the surface Wa of the workpiece W. With this configuration, the temperature adjustment gas, the drying gas, and the processing liquid can be supplied to the surface of the substrate with a simpler operation.

Although various exemplary embodiments have been described above, various omissions, substitutions, and modifications may be made without being limited to the above-described exemplary embodiments. In addition, elements in different embodiments may be combined to form other embodiments.

For example, in the nozzle unit 43 described above, when viewed from the Y-axis direction (the direction in which the outlet 52 extends), the arrival positions on the surface Wa of the gas or processing liquid from the drying gas nozzle 45, the temperature adjustment gas nozzle 46, and the processing liquid nozzle 47 are approximately the same, but the relationship between the arrival positions is not limited to this. The arrival positions of the gas, etc. from any two of these three nozzles may be approximately the same, and the arrival position of the gas, etc. from the other nozzle may be different from the arrival position of the above two nozzles. The arrival positions of the gas, etc. from the three nozzles may be different from each other. Depending on these arrival positions, the ejection direction of the gas, etc. from the outlets of the three nozzles may be different from the example described above.

The arrangement (order) of the drying gas nozzle 45, the temperature adjustment gas nozzle 46, and the processing liquid nozzle 47 in the X-axis direction is not limited to the above example, and these three nozzles may be arranged in any order.

The liquid processing unit U1, which performs liquid processing other than the development process, may have a nozzle unit 43 similar to that described above. The coating and developing apparatus 2 (substrate processing system 1) is not limited to the above example, and may be configured in any way as long as it has at least a nozzle unit that includes an outlet extending in one direction and has a gas nozzle that radially ejects gas.

From the foregoing, it will be understood that the various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

2...coating and developing apparatus (liquid processing apparatus), 20...substrate holder, 43, 43A...nozzle unit, 45...drying gas nozzle, 45b...discharge port (drying gas discharge port), 46...temperature adjusting gas nozzle, 47...treatment liquid nozzle, 47b...discharge port (treatment liquid discharge port), 50...driver, 51...gas flow path (temperature adjusting gas flow path), 52...discharge port (temperature adjusting gas discharge port), 55...supply flow path, 56...discharge flow path, 100...control device (control unit).

Claims (15)

A nozzle unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate,
a temperature adjusting gas nozzle having a temperature adjusting gas flow path through which a temperature adjusting gas for changing the temperature of the solution supplied to the substrate flows and a temperature adjusting gas outlet port through which the temperature adjusting gas flowing through the temperature adjusting gas flow path is discharged toward a surface of the substrate;
a dry gas nozzle having a dry gas outlet for discharging a dry gas toward a surface of the substrate;
a processing liquid nozzle having a processing liquid outlet that discharges a processing liquid toward a surface of the substrate;
a driving unit that moves the temperature adjustment gas nozzle, the drying gas nozzle, and the processing liquid nozzle integrally along a surface of the substrate;
having
the temperature adjustment gas outlet is formed to extend in a first direction along the surface,
a width of the temperature adjusting gas flow path in the first direction increases toward the temperature adjusting gas outlet so that the temperature adjusting gas is discharged radially from the temperature adjusting gas outlet,
The temperature adjustment gas nozzle is a nozzle unit that ejects the temperature adjustment gas from the temperature adjustment gas ejection port toward a partial area on the surface of the substrate where the solution is retained . The nozzle unit according to claim 1, wherein the temperature adjustment gas nozzle is configured to be removable. the temperature regulating gas flow path includes a supply flow path and a discharge flow path connected to a downstream side of the supply flow path,
The supply flow path is a linear flow path extending in a predetermined direction and having a constant inner diameter,
3. The nozzle unit according to claim 1, wherein the discharge flow path is a flow path that extends along an inclined surface that intersects with an extension direction of the supply flow path and includes the first direction, and a height extending in a direction perpendicular to the first direction is smaller than the inner diameter. a bottom surface of the discharge flow path is formed by a surface material extending along the inclined surface,
The nozzle unit according to claim 3 , wherein an end of the supply flow passage is connected to the discharge flow passage at a position facing the face material of the discharge flow passage. the discharge flow path has a uniform length from a connection position with the supply flow path to each position of the temperature adjustment gas discharge port,
5. The nozzle unit according to claim 3, wherein the temperature adjusting gas discharge port is formed along a curved surface such that an inner side of the temperature adjusting gas discharge port in the width direction protrudes in the discharge direction from an end portion. The discharge flow path has a sector shape when viewed from a direction perpendicular to the inclined surface,
6. The nozzle unit according to claim 3, wherein the temperature adjustment gas ejection port is formed along an arc of the sector. The nozzle unit according to any one of claims 1 to 6, wherein the temperature adjustment gas outlet is located at a higher position than the treatment liquid outlet. The nozzle unit according to any one of claims 1 to 7, wherein in a second direction perpendicular to the first direction and along the surface of the substrate, the temperature adjustment gas nozzle is provided at a different position from the drying gas nozzle and the processing liquid nozzle. The nozzle unit according to claim 8, wherein the drying gas nozzle and the processing liquid nozzle are provided at different positions in the second direction. The nozzle unit according to claim 8, wherein the drying gas nozzle and the processing liquid nozzle are provided at the same position in the second direction and at different positions in the first direction. The nozzle unit according to any one of claims 1 to 10, wherein the temperature adjustment gas, the drying gas, and the processing liquid are supplied to approximately the same position on the surface of the substrate in a second direction perpendicular to the first direction and along the surface of the substrate. The nozzle unit according to any one of claims 1 to 11, wherein the driving unit moves the temperature adjustment gas nozzle, the drying gas nozzle, and the processing liquid nozzle along the first direction according to the type of fluid to be discharged, thereby supplying the fluid to the surface of the substrate. A nozzle unit according to any one of claims 1 to 12;
a substrate holding unit that holds and rotates the substrate with the surface facing upward;
A liquid processing apparatus comprising: a control unit that controls the nozzle unit and the substrate holding unit. The temperature regulating gas and the drying gas are supplied from the same source and through the same supply path;
The liquid treatment apparatus according to claim 13 , wherein in the nozzle unit, the temperature regulating gas flow path and the second flow path for supplying the drying gas are different from each other. A liquid processing method using a nozzle unit for a liquid processing apparatus that performs liquid processing using a solution on a substrate, comprising:
The nozzle unit includes:
a temperature adjusting gas nozzle including: a temperature adjusting gas flow path for circulating a temperature adjusting gas, the width of which in a first direction along a surface of the substrate increases toward a temperature adjusting gas outlet; and a temperature adjusting gas outlet formed to extend in the first direction and for outletting the temperature adjusting gas flowing through the temperature adjusting gas flow path toward the surface of the substrate;
a dry gas nozzle having a dry gas outlet for discharging a dry gas toward a surface of the substrate;
a processing liquid nozzle having a processing liquid outlet that discharges a processing liquid toward a surface of the substrate;
a driving unit that moves the temperature adjustment gas nozzle, the drying gas nozzle, and the processing liquid nozzle integrally along a surface of the substrate;
having
The drive unit is
radially discharging the temperature adjusting gas from the temperature adjusting gas discharge port toward the surface of the substrate;
after discharging the temperature adjusting gas, discharging the processing liquid from the processing liquid discharge port onto the surface of the substrate;
After discharging the processing liquid, discharging the dry gas from the dry gas discharge port onto the surface of the substrate;
Including,
The liquid processing method , wherein radially discharging the temperature adjustment gas from the temperature adjustment gas outlet includes discharging the temperature adjustment gas toward a partial area of the surface of the substrate where the solution is retained .

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