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JP7684044B2 - Silica-based hollow particles, method for producing same, and resin composition - Google Patents
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JP7684044B2 - Silica-based hollow particles, method for producing same, and resin composition - Google Patents

Silica-based hollow particles, method for producing same, and resin composition Download PDF

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JP7684044B2
JP7684044B2 JP2020218461A JP2020218461A JP7684044B2 JP 7684044 B2 JP7684044 B2 JP 7684044B2 JP 2020218461 A JP2020218461 A JP 2020218461A JP 2020218461 A JP2020218461 A JP 2020218461A JP 7684044 B2 JP7684044 B2 JP 7684044B2
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particles
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JP2022103683A (en
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美紀 江上
正展 谷口
宏忠 荒金
直幸 榎本
良 村口
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    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/22Expanded, porous or hollow particles
    • C08K7/24Expanded, porous or hollow particles inorganic
    • C08K7/26Silicon- containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
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    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer

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Description

本発明は、半導体の絶縁材料のフィラーとして有用なシリカ系中空粒子及びその製造方法、並びに樹脂組成物に関する。 The present invention relates to silica-based hollow particles that are useful as a filler for insulating materials in semiconductors, a method for producing the same, and a resin composition.

近年、情報通信におけるデータ通信の大容量化が進んでおり、通信機器の高速処理が求められている。このような通信機器に使用される半導体のプリント配線板における絶縁材料は、高速通信を実現するために、低誘電率化(低Dk化)、及び低誘電正接化(低Df化)が求められている。絶縁材料の誘電率が高いと誘電損失に繋がり、また、絶縁材料の誘電正接が高いと、誘電損失に繋がるだけでなく、発熱量の増大などの問題が生じることがある。 In recent years, the volume of data communication in information and communications has increased, and there is a demand for high-speed processing in communication devices. Insulating materials in printed wiring boards for semiconductors used in such communication devices are required to have low dielectric constants (low Dk) and low dielectric tangents (low Df) in order to achieve high-speed communication. If the dielectric constant of an insulating material is high, it will lead to dielectric loss, and if the dielectric tangent of an insulating material is high, it will not only lead to dielectric loss, but may also cause problems such as increased heat generation.

このような半導体のプリント配線板における絶縁材料においては、低誘電率化、及び低誘電正接化を実現すべく、絶縁材料の主体となる樹脂材料の開発が行われている。このような樹脂材料としては、例えば、エポキシ系樹脂、ポリフェニレンエーテル系樹脂、フッ素系樹脂等が提案されている(例えば、特許文献1~5参照)。 In the insulating materials used in printed wiring boards for semiconductors, efforts are being made to develop resin materials that will serve as the main insulating material in order to achieve low dielectric constants and low dielectric loss tangents. Examples of such resin materials that have been proposed include epoxy resins, polyphenylene ether resins, and fluorine resins (see, for example, Patent Documents 1 to 5).

一方、このような樹脂材料には、耐久性(剛性)や耐熱性等の点から、フィラーが配合される。このフィラーとしては、シリカ、窒化ホウ素、タルク、カオリン、クレー、マイカ、アルミナ、ジルコニア、チタニア等の金属酸化物が用いられている(例えば、特許文献3参照)。 On the other hand, fillers are blended into such resin materials for the sake of durability (rigidity) and heat resistance. Examples of such fillers include silica, boron nitride, talc, kaolin, clay, mica, alumina, zirconia, titania, and other metal oxides (see, for example, Patent Document 3).

WO2009/041137号WO2009/041137 特表2006-516297号公報Special Publication No. 2006-516297 特開2017-057352号公報JP 2017-057352 A 特開2001-288227号公報JP 2001-288227 A 特開2019-172962号公報JP 2019-172962 A

上記半導体の絶縁材料に含まれるフィラーの中でも、シリカは、低誘電率及び低誘電正接の点で優れている。しかしながら、データ通信の大容量化及び高速処理化が急速に進む今日においては、さらなる低誘電率化、及び低誘電正接化が求められている。また、半導体の絶縁材料のフィラーは、絶縁材料の製造プロセスでの絶縁材料形成用液の濾過性や注入性を妨げないことも重要である。 Among the fillers contained in the insulating materials for semiconductors, silica excels in terms of its low dielectric constant and low dielectric loss tangent. However, in today's world where data communication is rapidly increasing in capacity and processing speed, there is a demand for even lower dielectric constants and dielectric loss tangents. It is also important that the filler in the insulating material for semiconductors does not interfere with the filterability or injectability of the insulating material-forming liquid in the manufacturing process for the insulating material.

本発明の課題は、絶縁材料の低誘電率化及び低誘電正接化を可能とし、製造プロセスでの絶縁材料形成用液の濾過性及び注入性を妨げないシリカ系粒子、及びその製造方法を提供することにある。 The objective of the present invention is to provide silica-based particles that enable the dielectric constant and dielectric tangent of insulating materials to be reduced and that do not impede the filterability and injectability of the insulating material-forming liquid during the manufacturing process, and a method for manufacturing the same.

本発明者らは、データ通信の大容量化及び高速処理化が急速に進む中、半導体の絶縁材料のフィラーとして有用なシリカ粒子について鋭意研究した結果、粗大粒子を含まない所定条件を満たすシリカ系中空粒子が、絶縁材料の低誘電率化及び低誘電正接化を実現でき、また、その製造プロセスにおける絶縁材料形成用液の濾過性及び注入性を妨げないことを見いだし、本発明を完成するに至った。 As data communication is rapidly becoming larger in capacity and faster in processing, the inventors conducted extensive research into silica particles that are useful as fillers for insulating materials in semiconductors. As a result, they discovered that silica-based hollow particles that do not contain coarse particles and meet certain conditions can achieve low dielectric constants and low dielectric tangents in insulating materials, and do not impede the filterability and injectability of the insulating material-forming liquid in the manufacturing process, which led to the completion of the present invention.

すなわち、本発明は、無孔質の外殻の内部に空洞を有し、平均粒子径(D50)が0.1~10μmのシリカ系中空粒子であって、水に懸濁した際、浮遊粒子aが0.5~7.0質量%、懸濁粒子bが0~4.0質量%、沈降粒子cが89.0~99.5質量%であることを特徴とするシリカ系中空粒子に関する。 That is, the present invention relates to silica-based hollow particles that have cavities inside a non-porous outer shell, have an average particle size (D50) of 0.1 to 10 μm, and are characterized in that, when suspended in water, floating particles a are 0.5 to 7.0 mass%, suspended particles b are 0 to 4.0 mass%, and sinking particles c are 89.0 to 99.5 mass%.

また、本発明は、珪酸アルカリ水溶液を熱風気流中で噴霧乾燥して中空粒子を調製する中空粒子調製工程と、調製された中空粒子に含まれるアルカリを酸で中和して除去するアルカリ除去工程と、アルカリ除去された中空粒子を焼成する焼成工程とを有するシリカ系中空粒子の製造方法であって、中空粒子調製工程と焼成工程の間に、中空粒子を分級して粗大粒子を除去する分級工程を有することを特徴とするシリカ系中空粒子の製造方法に関する。 The present invention also relates to a method for producing silica-based hollow particles, which includes a hollow particle preparation step in which an aqueous solution of alkali silicate is spray-dried in a hot air stream to prepare hollow particles, an alkali removal step in which the alkali contained in the prepared hollow particles is neutralized with an acid and removed, and a firing step in which the hollow particles from which the alkali has been removed are fired, and which is characterized in that a classification step is included between the hollow particle preparation step and the firing step in which the hollow particles are classified to remove coarse particles.

本発明のシリカ系中空粒子は、絶縁材料の低誘電率化及び低誘電正接化を実現でき、ひいては、半導体の伝送速度の高速化や伝送損失の低減を図ることができる。また、本発明のシリカ系中空粒子は、その製造プロセスにおける絶縁材料形成用液の濾過性及び注入性を妨げないものであり、優れた絶縁材料を安定して製造することができる。 The silica-based hollow particles of the present invention can realize a low dielectric constant and low dielectric loss tangent of insulating materials, and can therefore increase the transmission speed of semiconductors and reduce transmission loss. Furthermore, the silica-based hollow particles of the present invention do not impede the filterability and injectability of the insulating material forming liquid in the manufacturing process, and can stably manufacture excellent insulating materials.

[シリカ系中空粒子]
本発明のシリカ系中空粒子は、無孔質の外殻の内部に空洞を有し、平均粒子径が0.1~10μmである。このシリカ系中空粒子を水に懸濁させたとき、浮遊粒子が0.5~7.0質量%、懸濁粒子が0~4.0質量%、沈降粒子が89.0~99.5質量%である。
[Silica-based hollow particles]
The silica-based hollow particles of the present invention have cavities inside a non-porous outer shell and have an average particle size of 0.1 to 10 μm. When these silica-based hollow particles are suspended in water, the floating particles account for 0.5 to 7.0 mass%, the suspended particles for 0 to 4.0 mass%, and the settling particles for 89.0 to 99.5 mass%.

ここで、シリカ系とは、シリカを主成分とすることを意味し、シリカの他、アルミナ、ジルコニア、チタニア等の無機酸化物を含んでいてもよい。粒子中のシリカの含有量としては、70質量%以上が好ましく、90質量%以上がより好ましく、95質量%以上がさらに好ましく、実質的にシリカのみからなることが特に好ましい。 Here, silica-based means that the main component is silica, and may contain inorganic oxides such as alumina, zirconia, and titania in addition to silica. The silica content in the particles is preferably 70% by mass or more, more preferably 90% by mass or more, and even more preferably 95% by mass or more, and it is particularly preferable that the particles consist essentially of silica.

本発明の粒子は、無孔質の外殻の内部に空洞を有する中空の粒子であり、かつ、水に懸濁した際に浮遊する比重の軽い浮遊粒子(空隙率の高い粒子)を含んでいる。そのため、樹脂組成物に配合した場合に低誘電率化及び低誘電正接化が実現する。また、空隙率の高い中空粒子は、一般的に粒子径が大きいため、この浮遊粒子の量を粒子全体の0.5~7.0質量%に制御することは、粗大粒子の量を制御する(低減する)ことになる。そのため、絶縁材料等の樹脂組成物の製造プロセスにおける樹脂組成物形成用液の濾過性や注入性が向上し、成型後の表面平滑性の向上を図ることができる。このとき、粒子径8.0μmを超える粗大粒子の含有量が、10体積%以下が好ましく、5体積%以下がより好ましく、1体積%以下がさらに好ましい。 The particles of the present invention are hollow particles having a cavity inside a non-porous outer shell, and contain floating particles (particles with high porosity) with a low specific gravity that float when suspended in water. Therefore, when blended into a resin composition, a low dielectric constant and low dielectric loss tangent are achieved. In addition, since hollow particles with high porosity generally have a large particle diameter, controlling the amount of these floating particles to 0.5 to 7.0 mass% of the total particles controls (reduces) the amount of coarse particles. Therefore, the filterability and injectability of the resin composition forming liquid in the manufacturing process of a resin composition such as an insulating material are improved, and the surface smoothness after molding can be improved. In this case, the content of coarse particles with a particle diameter of more than 8.0 μm is preferably 10 vol% or less, more preferably 5 vol% or less, and even more preferably 1 vol% or less.

なお、水に浮遊する比重の軽い粒子は、粒子径に対する外殻の厚みの比率が小さいため、粒子強度が低い傾向にある。そのため、絶縁材料等の樹脂組成物の製造時に、粒子が割れる恐れがある。この粒子の割れの発生は、低誘電率化及び低誘電正接化の妨げとなると共に、樹脂組成物形成用液の流動性を悪化させて、樹脂組成物(成型物)の均一性を低下させたり、樹脂組成物の内部にボイドを生じさせたりする要因となる。浮遊粒子の量を制御することで、粒子の割れを抑制できる。 Light-weight particles suspended in water tend to have low particle strength because the ratio of shell thickness to particle diameter is small. This can lead to particle cracking during the production of resin compositions such as insulating materials. The occurrence of particle cracking not only prevents the achievement of low dielectric constants and low dielectric tangents, but also deteriorates the fluidity of the resin composition forming liquid, reducing the uniformity of the resin composition (molded product) and causing voids to form inside the resin composition. Particle cracking can be suppressed by controlling the amount of suspended particles.

本発明では、特に浮遊粒子の量が制御されていることから、空隙率が高い粒子のもつ好ましい特性(特に低誘電率化及び低誘電正接化)を確保しつつ、空隙率の高い粒子のもつ好ましくない特性(特に割れの発生)が問題のない程度に抑制される。また、浮遊粒子は、空隙率が高くとも小径の粒子が存在しており、このような粒子は、製造プロセスにおいて、大径粒子に比べて割れが生じにくく、全体として、空隙率の高い粒子のもつ好ましくない特性を極力抑えることができる。 In the present invention, the amount of suspended particles is particularly controlled, so that the desirable properties of particles with high porosity (particularly low dielectric constant and low dielectric tangent) are secured while the undesirable properties of particles with high porosity (particularly the occurrence of cracks) are suppressed to an acceptable level. Furthermore, even if the suspended particles have a high porosity, there are also small-diameter particles, and such particles are less likely to crack during the manufacturing process than large-diameter particles, so that overall the undesirable properties of particles with high porosity can be suppressed as much as possible.

浮遊粒子の含有量は、1.0~5.0質量%が好ましく、1.0質量~4.0質量%がより好ましく、2.0~4.0質量%がさらに好ましい。また、沈降粒子の含有量は、91.0~99.5質量%が好ましく、92.0~99.0質量%がより好ましく、95.0~98.0質量%がさらに好ましい。 The content of floating particles is preferably 1.0 to 5.0% by mass, more preferably 1.0 to 4.0% by mass, and even more preferably 2.0 to 4.0% by mass. The content of sinking particles is preferably 91.0 to 99.5% by mass, more preferably 92.0 to 99.0% by mass, and even more preferably 95.0 to 98.0% by mass.

水に懸濁した際の浮遊粒子、懸濁粒子及び沈降粒子の割合は、懸濁液からそれぞれの粒子を回収して計量し、その割合を算出する。具体的には、実施例で説明する。 The proportions of floating particles, suspended particles, and sinking particles when suspended in water are calculated by collecting and weighing each type of particle from the suspension. Specific examples will be explained in the Examples.

また、本発明のシリカ系中空粒子の平均粒子径(D50)は、0.1~10μmの範囲にある。平均粒子径が0.1μm未満のものは、噴霧乾燥法を用いて製造することが困難である。また、平均粒子径が10μmを超えるシリカ系粒子は、半導体用途としては不向きである。半導体用途であることを考慮すると、平均粒子径は、0.5~10μmが好ましく、1.0~5.0μmがより好ましい。 The average particle size (D50) of the silica-based hollow particles of the present invention is in the range of 0.1 to 10 μm. It is difficult to manufacture particles with an average particle size of less than 0.1 μm using the spray drying method. Silica-based particles with an average particle size of more than 10 μm are not suitable for semiconductor applications. Considering that they are used in semiconductor applications, the average particle size is preferably 0.5 to 10 μm, and more preferably 1.0 to 5.0 μm.

また、最大粒子径(D100)は50μm以下が好ましく、40μm以下がより好ましく、30μm以下がさらに好ましい。最大粒子径(D100)は、平均粒子径(D50)の10倍以下が好ましく、8倍以下が好ましい。通常は、2倍以上であり、本発明の要件を満たす限り、5倍を超えてもよい。 The maximum particle size (D100) is preferably 50 μm or less, more preferably 40 μm or less, and even more preferably 30 μm or less. The maximum particle size (D100) is preferably 10 times or less, and more preferably 8 times or less, the average particle size (D50). It is usually 2 times or more, and may be more than 5 times as long as the requirements of the present invention are met.

平均粒子径(D50)、最大粒子径(D100)及び粗大粒子の含有量は、レーザー回折・散乱法により測定する。具体的には、実施例で説明する。 The average particle size (D50), maximum particle size (D100) and content of coarse particles are measured by a laser diffraction/scattering method. Specific details are described in the examples.

本発明のシリカ系中空粒子の空隙率は、5体積%以上が好ましく、8体積%以上がより好ましく、10体積%以上がさらに好ましい。上限側は、50体積%以下が好ましく、35体積%以下がより好ましく、25体積%以下がさらに好ましく、20体積%以下が最も好ましい。このような空隙率により、低誘電率化及び低誘電正接化を図ることができると共に、粒子強度を所定以上に保持して粒子の割れを効果的に抑制することができる。ここで、空隙率は、粒子密度から算出する。具体的には、実施例で説明する。 The porosity of the silica-based hollow particles of the present invention is preferably 5% by volume or more, more preferably 8% by volume or more, and even more preferably 10% by volume or more. The upper limit is preferably 50% by volume or less, more preferably 35% by volume or less, even more preferably 25% by volume or less, and most preferably 20% by volume or less. Such a porosity can reduce the dielectric constant and the dielectric loss tangent, and can effectively suppress particle cracking by maintaining the particle strength at a predetermined level or more. Here, the porosity is calculated from the particle density. Specific examples will be described in the Examples.

本発明のシリカ系中空粒子は、半導体等の電子材料の絶縁材料のフィラーとして用いることが好適である。具体的には、プリント配線板(リジッド基板及びフレキシブル基板を含む)を形成するための銅張積層板、プリプレグ、ビルドアップフィルム等に配合することができる。また、モールド樹脂、モールドアンダーフィル、アンダーフィル等の半導体パッケージ関連材料や、フレキシブル基板用接着剤等に配合することができる。 The silica-based hollow particles of the present invention are suitable for use as a filler for insulating materials for electronic materials such as semiconductors. Specifically, they can be blended into copper-clad laminates, prepregs, build-up films, etc. for forming printed wiring boards (including rigid and flexible boards). They can also be blended into semiconductor package-related materials such as mold resins, mold underfills, and underfills, and adhesives for flexible boards, etc.

[樹脂組成物]
本発明の樹脂組成物には、上述した本発明のシリカ系中空粒子が配合されている。このような樹脂組成物は、半導体等の電子材料の絶縁材料等、上述したシリカ系中空粒子の用途に用いることができる。
[Resin composition]
The resin composition of the present invention contains the silica-based hollow particles of the present invention. Such a resin composition can be used for applications of the silica-based hollow particles, such as insulating materials for electronic materials such as semiconductors.

本発明の樹脂組成物(樹脂組成物形成用液)に含まれる樹脂として、一般に半導体等の電子材料に使用されている硬化性樹脂を使用することができる。光硬化樹脂でもよいが、熱硬化樹脂が好ましい。このような硬化性樹脂として、エポキシ系樹脂、ポリフェニレンエーテル系樹脂、フッ素系樹脂、ポリイミド系樹脂、ビスマレイミド系樹脂、アクリル系樹脂、メタクリル系樹脂、シリコーン系樹脂、BTレジン、シアネート系樹脂等を挙げることができる。エポキシ系樹脂として、ビスフェノール型エポキシ樹脂、ノボラック型エポキシ樹脂、トリフェノールアルカン型エポキシ樹脂、ビフェニル骨格を有するエポキシ樹脂、ナフタレン骨格を有するエポキシ樹脂、ジシクロペンタジエンフェノールノボラック樹脂、フェノールアラルキル型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、脂環式エポキシ樹脂、複素環型エポキシ樹脂、ハロゲン化エポキシ樹脂等を具体的に例示することができる。これらの樹脂は、単独で使用しても、2種以上を混合して使用してもよい。 As the resin contained in the resin composition (resin composition forming liquid) of the present invention, a curable resin generally used in electronic materials such as semiconductors can be used. A photocurable resin may be used, but a thermosetting resin is preferred. Examples of such curable resins include epoxy resins, polyphenylene ether resins, fluorine resins, polyimide resins, bismaleimide resins, acrylic resins, methacrylic resins, silicone resins, BT resins, cyanate resins, and the like. Specific examples of epoxy resins include bisphenol-type epoxy resins, novolac-type epoxy resins, triphenol alkane-type epoxy resins, epoxy resins having a biphenyl skeleton, epoxy resins having a naphthalene skeleton, dicyclopentadiene phenol novolac resins, phenol aralkyl-type epoxy resins, glycidyl ester-type epoxy resins, alicyclic epoxy resins, heterocyclic epoxy resins, halogenated epoxy resins, and the like. These resins may be used alone or in a mixture of two or more.

本発明の樹脂組成物(樹脂組成物形成用液)中のシリカ系中空粒子の含有量としては、シリカ系中空粒子Aと硬化性樹脂Bの質量比(A/B)が、10/100~95/100が好ましく、30/100~80/100がより好ましい。このような質量比により、流動性等の樹脂組成物形成用液の特性を維持しつつ、フィラーとしての機能を十分に発揮することができる。 The content of the silica-based hollow particles in the resin composition (resin composition forming liquid) of the present invention is preferably a mass ratio (A/B) of silica-based hollow particles A to curable resin B of 10/100 to 95/100, more preferably 30/100 to 80/100. Such a mass ratio allows the resin composition forming liquid to fully function as a filler while maintaining its properties such as fluidity.

本発明の樹脂組成物(樹脂組成物形成用液)は、フェノール化合物、アミン化合物、酸無水物等の硬化剤を含むことが好ましい。硬化性樹脂としてエポキシ樹脂を用いる場合、硬化剤としては、1分子中にフェノール性水酸基を2個以上有する、ビスフェノール型樹脂、ノボラック樹脂、トリフェノールアルカン型樹脂、レゾール型フェノール樹脂、フェノールアラルキル樹脂、ビフェニル型フェノール樹脂、ナフタレン型フェノール樹脂、シクロペンタジエン型フェノール樹脂等のフェノール樹脂や、メチルヘキサヒドロフタル酸、メチルテトラヒドロフタル酸、無水メチルナジック酸等の酸無水物を挙げることができる。 The resin composition (liquid for forming a resin composition) of the present invention preferably contains a curing agent such as a phenol compound, an amine compound, or an acid anhydride. When an epoxy resin is used as the curable resin, examples of the curing agent include phenolic resins having two or more phenolic hydroxyl groups in one molecule, such as bisphenol type resins, novolac resins, triphenolalkane type resins, resol type phenolic resins, phenol aralkyl resins, biphenyl type phenolic resins, naphthalene type phenolic resins, and cyclopentadiene type phenolic resins, and acid anhydrides such as methylhexahydrophthalic acid, methyltetrahydrophthalic acid, and methylnadic anhydride.

樹脂組成物(樹脂組成物形成用液)には、必要に応じて、着色剤、応力緩和剤、消泡剤、レベリング剤、カップリング剤、難燃剤、硬化促進剤等の各種添加剤を添加することができる。 Various additives such as colorants, stress relaxation agents, defoamers, leveling agents, coupling agents, flame retardants, and curing accelerators can be added to the resin composition (resin composition forming liquid) as necessary.

本発明の樹脂組成物は、従来公知の方法で得ることができる。例えば、熱硬化性樹脂、シリカ系中空粒子、硬化剤、添加剤等を混合し、ロールミルなどで混練して塗布液(樹脂組成物形成用液)を調製し、基体に塗布後、熱、紫外線等により硬化させることにより得ることができる。 The resin composition of the present invention can be obtained by a conventional method. For example, a thermosetting resin, hollow silica particles, a curing agent, additives, etc. are mixed and kneaded with a roll mill or the like to prepare a coating liquid (liquid for forming a resin composition), which is then applied to a substrate and cured by heat, ultraviolet light, etc.

[シリカ系粒子の製造方法]
本発明のシリカ系中空粒子の製造方法は、珪酸アルカリ水溶液を熱風気流中で噴霧乾燥して中空粒子を調製する中空粒子調製工程と、調製された中空粒子に含まれるアルカリを酸で中和して除去するアルカリ除去工程と、アルカリ除去された中空粒子を焼成する焼成工程とを有し、中空粒子調製工程と焼成工程の間に、中空粒子を分級して粗大粒子を除去する分級工程が設けられている。なお、各工程の間に、乾燥工程等の他の工程を有していてもよい。
[Method of producing silica-based particles]
The method for producing hollow silica particles of the present invention comprises a hollow particle preparation step of spray-drying an aqueous solution of alkali silicate in a hot air stream to prepare hollow particles, an alkali removal step of neutralizing and removing the alkali contained in the prepared hollow particles with an acid, and a firing step of firing the hollow particles from which the alkali has been removed, and a classification step of classifying the hollow particles to remove coarse particles is provided between the hollow particle preparation step and the firing step. Note that other steps such as a drying step may be provided between each step.

本発明の製造方法により、例えば、上記のような本発明のシリカ系中空粒子を製造することができる。すなわち、本発明の製造方法によれば、絶縁材料の低誘電率化及び低誘電正接化が可能となり、また、その製造プロセスにおける絶縁材料形成用液の濾過性及び注入性を妨げないシリカ系粒子を製造することができる。 The manufacturing method of the present invention can produce, for example, the silica-based hollow particles of the present invention as described above. That is, the manufacturing method of the present invention can produce silica-based particles that can reduce the dielectric constant and dielectric tangent of insulating materials and do not interfere with the filterability and injectability of the insulating material-forming liquid in the manufacturing process.

また、通常、焼成粒子を製造する際に分級処理を行う場合には、最終粒子を整えるために、焼成後の最終段階で行うことが好ましいと考えられるが、本発明の製造方法においては、あえて焼成工程前に行う。分級処理を行わずに焼成工程を行うと、本来取り除かれるべき高空隙率の粗大粒子が存在してしまう。この高空隙率の粗大粒子は割れやすいため、加熱による収縮のストレスで割れるおそれがある。そして、この割れにより生じた破片は、粒子径が小さくなるため、その後の分級工程で取り除くことができず、また、空隙もない緻密なシリカであるため、低誘電率化・低誘電正接化の妨げとなる。本発明の製造方法のように、分級処理を焼成前に行うことにより、このような不都合は回避され、製造した粒子の低誘電率化・低誘電正接化をより確実に実現でき、近時のデータ通信の高速化に対応した粒子が得られる。 In addition, when a classification process is usually performed during the manufacture of sintered particles, it is considered preferable to perform the classification process at the final stage after sintering in order to arrange the final particles, but in the manufacturing method of the present invention, it is performed before the sintering process. If the sintering process is performed without classification, coarse particles with high porosity that should have been removed will remain. These coarse particles with high porosity are prone to cracking, and may crack due to the stress of shrinkage caused by heating. The fragments generated by the cracks have a small particle size and cannot be removed in the subsequent classification process. In addition, since the silica is dense and has no voids, it hinders the reduction of the dielectric constant and dielectric loss tangent. By performing classification before sintering as in the manufacturing method of the present invention, such inconveniences can be avoided, and the manufactured particles can be more reliably reduced in dielectric constant and dielectric loss tangent, resulting in particles that can meet the recent high speed of data communication.

(中空粒子調製工程)
中空粒子調製工程では、珪酸アルカリ水溶液を熱風気流中で噴霧乾燥して中空粒子を調製する。
(Hollow particle preparation process)
In the hollow particle preparation step, an aqueous alkali silicate solution is spray-dried in a hot air current to prepare hollow particles.

珪酸アルカリとして、通常、水に可溶の珪酸ナトリウム、珪酸カリウムが用いられるが、珪酸ナトリウムが好ましい。珪酸アルカリのSiO/MOモル比(但し、Mはアルカリ金属を示す。)としては、1~5が好ましく、2~4がより好ましい。珪酸アルカリのSiO/MOモル比が1未満の場合は、アルカリ量が多すぎるためにアルカリ除去工程における酸洗浄が困難となるだけでなく、噴霧乾燥品の潮解性が顕著となるために所望のシリカ系中空粒子が得られない場合がある。珪酸アルカリのSiO/MOモル比が5を超えると、珪酸アルカリの可溶性が低下し、水溶液の調製が困難であり、水溶液を調製できたとしても、噴霧乾燥により所望のシリカ系中空粒子が得られない場合がある。 As the alkali silicate, sodium silicate or potassium silicate, which is soluble in water, is usually used, but sodium silicate is preferred. The SiO 2 /M 2 O molar ratio of the alkali silicate (wherein M represents an alkali metal) is preferably 1 to 5, more preferably 2 to 4. If the SiO 2 /M 2 O molar ratio of the alkali silicate is less than 1, not only is the amount of alkali too large, making acid washing in the alkali removal step difficult, but the deliquescence of the spray-dried product becomes significant, so that the desired silica-based hollow particles may not be obtained. If the SiO 2 /M 2 O molar ratio of the alkali silicate is more than 5, the solubility of the alkali silicate decreases, making it difficult to prepare an aqueous solution, and even if an aqueous solution can be prepared, the desired silica-based hollow particles may not be obtained by spray drying.

珪酸アルカリ水溶液のSiOとしての濃度は、1~30質量%が好ましく、5~28質量%が好ましい。1質量%未満としても製造は可能であるが、生産性が著しく低下する。30質量%を超えると、珪酸アルカリ水溶液としての安定性が著しく低下して高粘性になり噴霧乾燥が困難となる場合があり、また噴霧乾燥できたとしても、粒子径分布、外殻の厚さ等が極めて不均一になるおそれがあり、最終的な粒子の用途が制限される場合がある。 The SiO2 concentration of the alkali silicate aqueous solution is preferably 1 to 30% by mass, and more preferably 5 to 28% by mass. Although production is possible at less than 1% by mass, productivity is significantly reduced. If it exceeds 30% by mass, the stability of the alkali silicate aqueous solution is significantly reduced, resulting in high viscosity and making spray drying difficult. Even if spray drying is possible, the particle size distribution, shell thickness, etc. may become extremely non-uniform, and the final use of the particles may be limited.

噴霧乾燥方法としては、例えば、回転ディスク法、加圧ノズル法、2流体ノズル法等の従来公知の方法を採用することができる。ここでは、2流体ノズル法が好適である。 As a spray drying method, for example, a conventionally known method such as a rotating disk method, a pressure nozzle method, or a two-fluid nozzle method can be used. Here, the two-fluid nozzle method is preferred.

噴霧乾燥において、噴霧乾燥器における入口温度は、300~600℃が好ましく、350~550℃がより好ましい。また、出口温度は、120~300℃が好ましく、130~250℃がより好ましい。入口温度及び出口温度が上記範囲にあることにより、内部に空洞を有する中空粒子を安定して得ることができる。 In spray drying, the inlet temperature of the spray dryer is preferably 300 to 600°C, more preferably 350 to 550°C. The outlet temperature is preferably 120 to 300°C, more preferably 130 to 250°C. By keeping the inlet and outlet temperatures within the above ranges, hollow particles having internal cavities can be stably obtained.

(アルカリ除去工程)
アルカリ除去工程では、調製された中空粒子に含まれるアルカリを酸で中和して除去する。
(Alkaline removal process)
In the alkali removal step, the alkali contained in the prepared hollow particles is neutralized with an acid and removed.

酸としては、塩酸、硝酸、硫酸等の鉱酸、酢酸、酒石酸、リンゴ酸等の有機酸等を用いることができる。これらの中でも、塩酸、硝酸、硫酸等の鉱酸が好適に用いられ、価数の点から、硫酸が特に好ましい。 As the acid, mineral acids such as hydrochloric acid, nitric acid, sulfuric acid, etc., and organic acids such as acetic acid, tartaric acid, malic acid, etc. can be used. Among these, mineral acids such as hydrochloric acid, nitric acid, and sulfuric acid are preferably used, and sulfuric acid is particularly preferred in terms of valence.

本工程の処理としては、酸を用いた処理であれば特に制限されるものではなく、酸の溶液に、調製された中空粒子を浸漬する処理が好ましい。 The treatment in this step is not particularly limited as long as it is a treatment using an acid, and a treatment in which the prepared hollow particles are immersed in an acid solution is preferred.

中空粒子を酸水溶液に浸漬する際の中空粒子中のMOモル数(Msp)と酸のモル数(Ma)とのモル比(Ma)/(Msp)は、0.6~4.7が好ましく、1~4.5が好ましい。このモル比が0.6未満の場合は、MOに対して酸の量が少なすぎるために、アルカリの除去とともに起きると考えられるケイ酸のシリカ骨格化が進行せず、中空粒子が部分的に溶解したり、溶解した珪酸アルカリがゲル化する場合がある。モル比が4.7を超えてもさらにシリカ骨格化が進むことはなく、酸が過剰であり経済的でない。 When the hollow particles are immersed in an aqueous acid solution, the molar ratio (Ma)/(Msp) of the number of moles of M 2 O in the hollow particles (Msp) to the number of moles of acid (Ma) is preferably 0.6 to 4.7, more preferably 1 to 4.5. If this molar ratio is less than 0.6, the amount of acid relative to M 2 O is too small, so that the conversion of silicic acid to a silica skeleton, which is thought to occur with the removal of the alkali, does not proceed, and the hollow particles may partially dissolve or the dissolved alkali silicate may gel. If the molar ratio exceeds 4.7, the conversion to a silica skeleton does not proceed further, and the amount of acid is excessive, which is uneconomical.

また、酸水溶液に浸漬した際の中空粒子の濃度は、SiOとして1~30質量%が好ましく、5~25質量%が好ましい。1質量%未満の場合は、アルカリ除去や洗浄性に問題はないが、製造効率が低下する。30質量%を超えると、濃度が濃すぎてアルカリ除去、洗浄効率が低下する場合がある。 The concentration of the hollow particles when immersed in an acid aqueous solution is preferably 1 to 30 mass% as SiO2 , and more preferably 5 to 25 mass%. If it is less than 1 mass%, there is no problem with alkali removal or cleaning, but the production efficiency decreases. If it exceeds 30 mass%, the concentration is too high and the alkali removal and cleaning efficiency may decrease.

酸水溶液への浸漬処理の条件としては、アルカリを所望の量まで除去できれば特に制限はなく、通常、処理温度が5~100℃であり、処理時間が0.5~24時間である。浸漬処理の後、従来公知の方法で洗浄することが好ましい。例えば、純水にて濾過洗浄すればよい。なお、必要に応じて、上記酸処理及び洗浄を繰り返し行ってもよい。 There are no particular limitations on the conditions for the immersion treatment in the acid aqueous solution as long as the desired amount of alkali can be removed. Typically, the treatment temperature is 5 to 100°C, and the treatment time is 0.5 to 24 hours. After the immersion treatment, it is preferable to wash the material by a conventionally known method. For example, filtration and washing with pure water may be performed. The acid treatment and washing may be repeated as necessary.

アルカリ除去工程終了後のアルカリ(M)の残存量(質量割合)は、300ppm以下が好ましく、200ppm以下がより好ましく、100ppm以下がさらに好ましく、50ppm以下が特に好ましい。本工程で十分にアルカリを除去することにより、後の工程での粒子の合着を防止して、焼成工程での焼結粒子の発生を防ぐことができる。また、アルカリの残存量(含有量)は、誘電特性に影響を及ぼすことが知られている。本工程において十分にアルカリを除去することにより、原料に珪酸アリカリ水溶液を用いた場合でも、低誘電率化及び低誘電正接化を可能とするシリカ系中空粒子を得ることができる。 The amount (mass ratio) of the alkali (M) remaining after completion of the alkali removal process is preferably 300 ppm or less, more preferably 200 ppm or less, even more preferably 100 ppm or less, and particularly preferably 50 ppm or less. By thoroughly removing the alkali in this process, it is possible to prevent the particles from coalescing in the subsequent process and to prevent the generation of sintered particles in the firing process. It is also known that the amount (content) of the alkali remaining affects the dielectric properties. By thoroughly removing the alkali in this process, it is possible to obtain silica-based hollow particles that enable a low dielectric constant and a low dielectric loss tangent, even when an alkali silicate aqueous solution is used as the raw material.

なお、最終製品(シリカ系中空粒子)のアルカリ量も上述の範囲が好ましく、通常、最終製品のアルカリ量はアルカリ除去工程後のアルカリ量と同等になる。 The amount of alkali in the final product (silica-based hollow particles) is preferably within the above range, and the amount of alkali in the final product is usually the same as the amount of alkali after the alkali removal process.

アルカリ残存量は、粒子を酸で溶解させたものを試料とし、原子吸光光度計を用いてNa又はKを測定する。珪酸ナトリウムを用いた場合はNaを測定し、珪酸カリウムを用いた場合はKを測定する。具体的には、実施例で説明する。 The amount of residual alkali is measured by dissolving particles in acid and measuring Na or K using an atomic absorption spectrophotometer. When sodium silicate is used, Na is measured, and when potassium silicate is used, K is measured. Specific examples will be explained in the Examples.

(焼成工程)
焼成工程は、アルカリ除去された中空粒子を焼成する工程である。焼成温度は、600~1200℃が好ましく、900~1100℃が好ましい。焼成温度が600℃未満の場合は、SiOH基の残存量が多く、粒子の誘電正接が高くなり、樹脂に配合した場合にも、誘電正接低減効果が得られにくい。焼成温度が1200℃を超える場合は、中空粒子同士が焼結しやすく、異形状の粒子や、粗大粒子となるため、樹脂組成物形成用液の濾過性や、注入性が低下する原因となる。
(Firing process)
The firing step is a step of firing the hollow particles from which the alkali has been removed. The firing temperature is preferably 600 to 1200°C, and more preferably 900 to 1100°C. If the firing temperature is less than 600°C, the amount of remaining SiOH groups is large, the dielectric tangent of the particles is high, and even if the particles are mixed with a resin, it is difficult to obtain a dielectric tangent reduction effect. If the firing temperature exceeds 1200°C, the hollow particles are likely to sinter with each other, becoming particles of irregular shapes or coarse particles, which causes a decrease in the filterability and injectability of the resin composition forming liquid.

(分級工程)
分級工程では、中空粒子を分級して粗大粒子を除去する。この分級工程は、中空粒子調製工程と焼成工程の間で行われる。中空粒子調製後に分級処理を行う場合には、中空粒子が吸湿(潮解)して凝集・合着することを防止するために造粒後直ちに分級処理をする必要がある。したがって、実際の製造上は、分級処理は、アルカリ除去工程後に行うことが好ましい。また、アルカリ除去工程後に分級処理を行う場合、分級処理は、アルカリ除去処理に続けて行ってもよいし、アルカリ除去処理の後に乾燥処理を行った後に行ってもよい。本発明の効果をより享受するには、乾燥処理の後に行うことが好ましい。
(Classification process)
In the classification process, the hollow particles are classified to remove coarse particles. This classification process is carried out between the hollow particle preparation process and the firing process. When the classification process is carried out after the hollow particle preparation, it is necessary to carry out the classification process immediately after granulation in order to prevent the hollow particles from absorbing moisture (deliquescing) and agglomerating or coalescing. Therefore, in actual production, it is preferable to carry out the classification process after the alkali removal process. In addition, when the classification process is carried out after the alkali removal process, the classification process may be carried out consecutively to the alkali removal process, or may be carried out after the drying process after the alkali removal process. In order to enjoy the effects of the present invention more effectively, it is preferable to carry out the classification process after the drying process.

分級工程では、粒子径8.0μmを超える粗大粒子の量を10体積%以下とすることが好ましく、5体積%以下とすることがより好ましく、1体積%以下とすることがさらに好ましい。この分級工程により、本発明のシリカ系中空粒子の浮遊粒子割合を所定範囲に制御することができる。 In the classification process, the amount of coarse particles having a particle diameter of more than 8.0 μm is preferably 10 vol. % or less, more preferably 5 vol. % or less, and even more preferably 1 vol. % or less. This classification process makes it possible to control the suspended particle ratio of the silica-based hollow particles of the present invention within a predetermined range.

本発明の分級工程での分級とは、粉体の粒度を揃えることを目的に、粒子径によって粉体を分ける粒度分級を意味する。この粒度分級の操作としては、流体分級を挙げることができ、流体分級は乾式分級と湿式分級に分類することができる。湿式分級は、粒子を水に懸濁した状態で分級処理を行う必要があり、粒子表面にSiOH基が生じ、誘電特性に悪影響を及ぼすおそれがあるため、乾式分級が好ましい。 The classification in the classification step of the present invention refers to particle size classification in which powder is divided according to particle size in order to make the particle size of the powder uniform. An example of this particle size classification operation is fluid classification, which can be divided into dry classification and wet classification. Dry classification is preferred because wet classification requires the classification process to be performed while the particles are suspended in water, which can generate SiOH groups on the particle surface and adversely affect the dielectric properties.

乾式分級に用いられる分級機を原理的に分類すると、重力分級機、慣性分級機、遠心分級機に大別することができ、本発明の目的を達成できる範囲でいずれの分級機を用いてもよいが、より精密な分級が可能な点から、粒子の慣性力を利用して分級する慣性分級機や、遠心分級機を用いることが好ましい。特に、本発明の中空粒子は軽く、粒子に遠心力が掛かりにくいため、そのような粒子でも特性を発揮する分級機が好ましい。このような分級機としては、例えば、日鉄鉱業株式会社製エルボージェット、日本スリーエム株式会社製SGセパレーター、日清エンジニアリング株式会社製エアロファインクラシファイア、日本ニューマチック工業株式会社マイクロスピン等を挙げることができる。これらの中でも、軽い中空粒子を精密に分級できることから、日鉄鉱業株式会社製エルボージェット、日清エンジニアリング株式会社製エアロファインクラシファイアが好ましい。 Classifiers used in dry classification can be broadly classified into gravity classifiers, inertial classifiers, and centrifugal classifiers in principle. Any classifier may be used as long as the object of the present invention can be achieved. However, in order to achieve more precise classification, it is preferable to use an inertial classifier that uses the inertial force of particles to classify, or a centrifugal classifier. In particular, since the hollow particles of the present invention are light and centrifugal force is not easily applied to the particles, a classifier that can exhibit its characteristics even with such particles is preferable. Examples of such classifiers include Elbow Jet manufactured by Nittetsu Mining Co., Ltd., SG Separator manufactured by Japan 3M Limited, Aero Fine Classifier manufactured by Nisshin Engineering Inc., and Microspin manufactured by Nippon Pneumatic Industry Co., Ltd. Among these, Elbow Jet manufactured by Nittetsu Mining Co., Ltd. and Aero Fine Classifier manufactured by Nisshin Engineering Inc. are preferable because they can precisely classify light hollow particles.

(乾燥工程)
本発明の製造方法においては、適宜、乾燥工程を設けることができる。乾燥工程は、例えば、アルカリ除去工程と分級工程の間や、分級工程と焼成工程の間や、その両方に設けることができる。必要に応じて複数回設けてもよい。
(drying process)
In the manufacturing method of the present invention, a drying step can be appropriately provided. For example, the drying step can be provided between the alkali removal step and the classification step, between the classification step and the calcination step, or both. The drying step can be provided multiple times as necessary.

乾燥方法としては、加熱乾燥が好ましい。乾燥温度は、50~400℃が好ましく、50~200℃がより好ましい。具体的には、50~200℃程度の低温で時間をかけて乾燥させる方法や、温度を徐々に上昇させて乾燥させる方法や、温度を何段階かに分けて変更して乾燥させる方法を挙げることができる。 The preferred drying method is heat drying. The drying temperature is preferably 50 to 400°C, and more preferably 50 to 200°C. Specifically, examples include a method of drying at a low temperature of about 50 to 200°C over a long period of time, a method of drying by gradually increasing the temperature, and a method of drying by changing the temperature in several stages.

(篩分け工程)
乾燥工程及び/又は焼成工程後に粒子塊を篩分けする篩分け工程を設けることが好ましい。なお、粒子塊とは、例えば、粒径が50μmを超えるような異物をいい、本工程では、このような粒子塊を取り除けるような目開き(メッシュ数)の篩を適宜用いる。
(Sieving process)
It is preferable to provide a sieving step for sieving out particle agglomerates after the drying step and/or the firing step. Note that the particle agglomerates refer to foreign matter having a particle size of, for example, more than 50 μm, and in this step, a sieve with an opening (mesh number) capable of removing such particle agglomerates is appropriately used.

以下、本発明の実施例を具体的に説明する。 The following is a detailed description of an embodiment of the present invention.

[実施例1]
水ガラス水溶液(SiO/NaOモル比3.2、SiO濃度24質量%)30000gを用い、2流体ノズルの一方に0.62kg/hrの流量で、他方のノズルに空気を31800L/hr(空/液体積比63600)の流量で、入口温度400℃の熱風に噴霧してシリカ中空粒子を得た。この時、出口温度は150℃であった(中空粒子調製工程)。
[Example 1]
Using 30,000 g of a water glass aqueous solution ( SiO2 / Na2O molar ratio 3.2, SiO2 concentration 24 mass%), one of the two-fluid nozzles was sprayed with a flow rate of 0.62 kg/hr, and the other nozzle was sprayed with air with a flow rate of 31,800 L/hr (air/liquid volume ratio 63,600) into hot air with an inlet temperature of 400°C to obtain hollow silica particles. At this time, the outlet temperature was 150°C (hollow particle preparation step).

ついで、シリカ中空粒子5000gを濃度10質量%の硫酸水溶液32000gに浸漬して15時間撹拌した。この時、固形分(SiO)濃度は10.2質量%、分散液の温度は35℃、pHは3.0であった。また、酸のモル数(Ma)とのモル比(Ma)/(Msp)は1.2であった。浸漬処理後、純水にて濾過洗浄を行った(アルカリ除去工程)。 Next, 5000 g of the hollow silica particles were immersed in 32000 g of a 10% by weight aqueous sulfuric acid solution and stirred for 15 hours. At this time, the solid content (SiO 2 ) concentration was 10.2% by weight, the temperature of the dispersion was 35° C., and the pH was 3.0. The molar ratio (Ma)/(Msp) with respect to the number of moles of acid (Ma) was 1.2. After the immersion treatment, the particles were filtered and washed with pure water (alkali removal process).

ついで、乾燥機にて、120℃で24時間乾燥処理した(乾燥工程)。乾燥後、解砕して目開き75μmの篩にかけて粗大粒子を除去した。 Then, the mixture was dried in a dryer at 120°C for 24 hours (drying process). After drying, the mixture was crushed and passed through a sieve with 75 μm openings to remove coarse particles.

ついで、自社製サイクロンを用いて、粉体輸送ラインの流速を5m/sとして、乾式遠心分級処理を行った(分級工程)。サイクロンに捕集されずに通過した粒子をバグフィルターで回収した。 Next, dry centrifugal classification was performed using a cyclone manufactured by the company, with the flow rate of the powder transport line set to 5 m/s (classification process). Particles that were not captured by the cyclone and passed through were collected in a bag filter.

最後に、分級した粒子を1000℃で10時間加熱処理することで目的の実施例に係るシリカ系中空粒子(A1)を得た(焼成工程)。なお、焼成後、目開き150μmの篩で粒子塊(異物)を取り除いた。 Finally, the classified particles were heat-treated at 1000°C for 10 hours to obtain the silica-based hollow particles (A1) of the target embodiment (calcination process). After calcination, particle agglomerates (foreign matter) were removed using a sieve with a mesh size of 150 μm.

また、製造したシリカ系中空粒子(A1)を、新日本理化株式会社製液状酸無水物「リカシッドMH700」、四国化成株式会社製イミダゾール系エポキシ樹脂硬化剤「2PHZ-PW」と共に、日鉄ケミカル&マテリアル社製液状エポキシ樹脂「ZX-1059」に配合して、遊星ミルで予備混錬後、三本ロールで混練し、樹脂組成物形成用液を調製した。なお、「ZX-1059」が100質量部、「リカシッドMH700」が86質量部、「2PHZ-PWが1質量部の割合で配合した。また、シリカ系中空粒子(A1)は、樹脂組成物中の割合が35体積%になるように配合した。この調製した樹脂組成物形成用液を170℃で2時間加熱して硬化し、50mm×50mm×1mmの実施例に係る板状樹脂組成物(A1R)を得た。 The produced silica-based hollow particles (A1) were mixed with the liquid acid anhydride "Rikacid MH700" manufactured by New Japan Chemical Co., Ltd., the imidazole-based epoxy resin curing agent "2PHZ-PW" manufactured by Shikoku Kasei Co., Ltd., and the liquid epoxy resin "ZX-1059" manufactured by Nippon Steel Chemical & Material Co., Ltd., and pre-mixed with a planetary mill, then mixed with a three-roll mill to prepare a resin composition forming liquid. The ratio of "ZX-1059" was 100 parts by mass, "Rikacid MH700" was 86 parts by mass, and "2PHZ-PW" was 1 part by mass. The silica-based hollow particles (A1) were mixed so that their ratio in the resin composition was 35% by volume. The prepared resin composition forming liquid was heated at 170°C for 2 hours to harden, and a plate-shaped resin composition (A1R) of the example of 50 mm x 50 mm x 1 mm was obtained.

[実施例2]
分級工程以外は、実施例1と同様に行い、実施例に係るシリカ系中空粒子(A2)及び板状樹脂組成物(A2R)を製造した。分級工程では、日鉄鉱業株式会社製エルボージェット(EJ-15)を用いて乾式慣性分級処理を行った。この装置では、分級によって、粉をF粉(微粉)、M粉(細粉)、G粉(粗粉)の3種類に分けることができるが、この内の、F粉(微粉)に含まれる8.0μmを超える粗大粒子が5体積%以下となるようにFエッジ距離を調整し、バグフィルターにて回収し、以降の工程に用いた。
[Example 2]
The silica-based hollow particles (A2) and plate-shaped resin composition (A2R) according to the present embodiment were produced in the same manner as in Example 1 except for the classification step. In the classification step, dry inertial classification was performed using an Elbow Jet (EJ-15) manufactured by Nittetsu Mining Co., Ltd. With this device, powder can be classified into three types, F powder (fine powder), M powder (fine powder), and G powder (coarse powder), and among these, the F edge distance was adjusted so that the coarse particles exceeding 8.0 μm contained in the F powder (fine powder) were 5 vol % or less, and the powder was collected by a bag filter and used in the subsequent steps.

[実施例3]
実施例2において、分級工程で、F粉(微粉)に含まれる8.0μmを超える粗大粒子が1体積%以下となるようにFエッジ距離を調整したこと以外は同様にして、実施例に係るシリカ系中空粒子(A3)及び板状樹脂組成物(A3R)を製造した。
[Example 3]
Silica-based hollow particles (A3) and plate-like resin composition (A3R) according to the present invention were produced in the same manner as in Example 2, except that in the classification step, the F edge distance was adjusted so that the amount of coarse particles exceeding 8.0 μm contained in the F powder (fine powder) was 1 vol % or less.

[実施例4]
実施例1において、分級工程で、日清エンジニアリング株式会社製エアロファインクラシファイアを用いて乾式遠心(半自由渦)分級処理を行ったこと以外は同様にして、実施例に係るシリカ系中空粒子(A4)及び板状樹脂組成物(A4R)を製造した。分級は、回収粉に含まれる8.0μmを超える粗大粒子が1体積%以下となるように、羽根の角度等を調整して行った。
[Example 4]
Silica-based hollow particles (A4) and plate-like resin composition (A4R) according to the present invention were produced in the same manner as in Example 1, except that in the classification step, dry centrifugal (semi-free vortex) classification was performed using an Aero Fine Classifier manufactured by Nisshin Engineering Co., Ltd. The classification was performed by adjusting the blade angle, etc., so that the amount of coarse particles exceeding 8.0 μm contained in the recovered powder was 1 volume % or less.

[比較例1]
実施例1において、アルカリ除去工程で、浸漬撹拌時間を15時間から1.5時間に変更し、分級処理(分級工程)を行わないこと以外は同様にして、比較例に係るシリカ系中空粒子(B1)及び板状樹脂組成物(B1R)を製造した。
[Comparative Example 1]
Silica-based hollow particles (B1) and a plate-like resin composition (B1R) according to Comparative Example were produced in the same manner as in Example 1, except that in the alkali removal step, the immersion and stirring time was changed from 15 hours to 1.5 hours and the classification treatment (classification step) was not performed.

[比較例2]
実施例1において、中空粒子調製工程において、噴霧乾燥器の入口温度を250℃とし、分級工程を行わなかったこと以外は同様にして、比較例に係るシリカ系中空粒子(B2)及び板状樹脂組成物(B2R)を製造した。
[Comparative Example 2]
Silica-based hollow particles (B2) and a plate-like resin composition (B2R) according to comparative examples were produced in the same manner as in Example 1, except that in the hollow particle preparation step, the inlet temperature of the spray dryer was set to 250° C. and the classification step was not performed.

[比較例3]
実施例1において、分級工程を焼成工程後に行った以外は同様にして(分級条件も同じにして)、比較例に係るシリカ系中空粒子(B3)及び板状樹脂組成物(B3R)を製造した。
[Comparative Example 3]
Silica-based hollow particles (B3) and a plate-like resin composition (B3R) according to comparative examples were produced in the same manner as in Example 1, except that the classification step was carried out after the baking step (the classification conditions were also the same).

上記製造した実施例及び比較例に係るシリカ系中空粒子及び樹脂組成物について、その特性を評価した。各評価は以下のように行った。 The properties of the silica-based hollow particles and resin compositions produced in the examples and comparative examples were evaluated. Each evaluation was performed as follows.

(1)シリカ系中空粒子の平均粒子径(D50)、最大粒子径(D100)、及び粗大粒子量
レーザー回折・散乱法により測定した。
具体的に、装置は、株式会社セイシン企業社製レーザーマイクロンサイザー(LMS-3000)を用い、乾式で測定した。
粗大粒子量は、8.0μmを超える粒子の体積比率として算出した。
(1) Average particle size (D50), maximum particle size (D100), and amount of coarse particles of silica-based hollow particles were measured by a laser diffraction/scattering method.
Specifically, the measurement was carried out in a dry state using a Laser Micron Sizer (LMS-3000) manufactured by Seishin Enterprise Co., Ltd.
The amount of coarse particles was calculated as the volume ratio of particles exceeding 8.0 μm.

(2)シリカ系中空粒子のNa残存量
原子吸光分析法により測定した。
具体的に、Na残存量は、シリカ系中空粒子を硫酸・弗化水素酸で前処理した後、塩酸に溶解させ、原子吸光光度計(日立製Z-2310)を用いてNa量を測定した。
(2) Residual Na Amount in Silica-Based Hollow Particles The amount was measured by atomic absorption spectrometry.
Specifically, the residual amount of Na was measured by pretreating the silica-based hollow particles with sulfuric acid and hydrofluoric acid, dissolving them in hydrochloric acid, and measuring the amount of Na using an atomic absorption spectrophotometer (Hitachi Z-2310).

(3)シリカ系中空粒子の粒子密度
ガスピクノメーター法により測定した。
具体的に、粒子密度は、Quantachrome Instruments社製Ultrapyc1200eを用いて、測定した。ガスは窒素ガスを用いた。
(3) Particle Density of Silica-Based Hollow Particles The particle density was measured by a gas pycnometer method.
Specifically, the particle density was measured using an Ultrapyc1200e manufactured by Quantachrome Instruments, Inc. Nitrogen gas was used as the gas.

(4)シリカ系中空粒子の空隙率
上記粒子密度から算出した。
具体的に、空隙率は、シリカの密度=2.2g/cmを用い、下記式(1)を用いて算出した。
空隙率(%)=[2.2-(シリカ系中空粒子の粒子密度)]/2.2×100・・・式(1)
(4) Porosity of silica-based hollow particles: Calculated from the above particle density.
Specifically, the porosity was calculated using the density of silica = 2.2 g/ cm3 and the following formula (1).
Porosity (%)=[2.2-(particle density of silica-based hollow particles)]/2.2×100 Equation (1)

(5)シリカ系中空粒子の誘電率(Dk)及び誘電正接(Df)
空洞共振器摂動法により測定した。
具体的に、シリカ系粒子の誘電率(Dk)及び誘電正接(Df)は、ネットワークアナライザー(アンリツ社製、MS46122B)と空洞共振器(1GHz)を用いて測定した。この測定はASTMD2520(JIS C2565)に準拠して行った。
(5) Dielectric constant (Dk) and dielectric loss tangent (Df) of silica-based hollow particles
The measurements were performed using a cavity resonator perturbation method.
Specifically, the dielectric constant (Dk) and dielectric loss tangent (Df) of the silica-based particles were measured using a network analyzer (MS46122B, manufactured by Anritsu Corporation) and a cavity resonator (1 GHz) in accordance with ASTM D2520 (JIS C2565).

(6)水に懸濁した際の浮遊粒子a、懸濁粒子b及び沈降粒子cの割合
懸濁液からそれぞれの粒子を回収して計量し、その割合を算出した。
具体的には、まず、0.5質量%となるようにシリカ系中空粒子と水を混合し、10分間の超音波処理を行うことにより分散液を調製した。この分散液を25℃にて24時間静置した後、浮遊粒子a、懸濁粒子b及び沈降粒子cをそれぞれ回収した。続いて、各粒子を105℃で24時間乾燥した後に計量し、その割合を算出した。
(6) Proportions of floating particles a, suspended particles b, and sinking particles c when suspended in water Each particle was recovered from the suspension and weighed, and the proportions were calculated.
Specifically, silica-based hollow particles were mixed with water to a concentration of 0.5% by mass, and ultrasonic treatment was performed for 10 minutes to prepare a dispersion. The dispersion was allowed to stand at 25° C. for 24 hours, and then floating particles a, suspended particles b, and sedimented particles c were collected. Each particle was then dried at 105° C. for 24 hours, after which it was weighed and its proportion was calculated.

(7)樹脂組成物形成用液の濾過性
ロキテクノ社製フィルター(SHPタイプ:30μm)を用い、フィルター目詰まりまでの単位面積あたりの通液量で評価した。
(7) Filterability of Resin Composition Forming Liquid Filterability was evaluated using a ROKI TECHNO filter (SHP type: 30 μm) in terms of the amount of liquid passing through per unit area until the filter became clogged.

評価基準は、以下の通りである。
◎:≧1g/cm
〇:0.5g/cm以上1.0g/cm未満
△:0.3g/cm以上0.5g/cm未満
×:<0.3g/cm
The evaluation criteria are as follows:
◎: ≧1 g/ cm2
◯: 0.5 g/cm2 or more and less than 1.0 g/ cm2 △: 0.3 g/ cm2 or more and less than 0.5 g/ cm2 ×: <0.3 g/ cm2

(8)樹脂組成物形成用液の注入性
20μmのギャップを有するガラス板間に対する注入を行い、25mm充填するのに要する時間で評価した。
(8) Injectability of Resin Composition Forming Liquid Injection was carried out between glass plates having a gap of 20 μm, and the injection property was evaluated based on the time required for filling the resin composition by 25 mm.

評価基準は、以下の通りである。
◎:200秒以内
〇:200秒を超えて400秒以内
△:400秒を超えて600秒以内
×:600秒超え
The evaluation criteria are as follows:
◎: Within 200 seconds
〇: More than 200 seconds and less than 400 seconds △: More than 400 seconds and less than 600 seconds ×: More than 600 seconds

(9)樹脂組成物の誘電率(Dk)及び誘電正接(Df)
50mm×50mm×1mmの板状成型体(樹脂組成物)の誘電率(Dk)及び誘電正接(Df)は、ネットワークアナライザー(アンリツ社製、MS46122B)と同軸共振器を用いて、9.4GHzで測定した。
(9) Dielectric constant (Dk) and dielectric loss tangent (Df) of the resin composition
The dielectric constant (Dk) and dielectric loss tangent (Df) of a 50 mm x 50 mm x 1 mm plate-shaped molded body (resin composition) were measured at 9.4 GHz using a network analyzer (MS46122B, manufactured by Anritsu Corporation) and a coaxial resonator.

評価は、シリカ系中空粒子(フィラー)を配合していない樹脂組成物との比較で行った。評価基準は、以下の通りである。 The evaluation was carried out in comparison with a resin composition that did not contain silica-based hollow particles (filler). The evaluation criteria were as follows:

誘電率(Dk)の低減率(%)=(フィラー添加なしの誘電率-フィラー添加ありの誘電率)/フィラー添加なしの誘電率×100 Reduction rate (%) of dielectric constant (Dk) = (Dielectric constant without added filler - Dielectric constant with added filler) / Dielectric constant without added filler x 100

〇:低減率>0
△:低減率=0
×:低減率<0
○: Reduction rate > 0
△: Reduction rate = 0
×: Reduction rate < 0

誘電正接(Df)の低減率(%)=(フィラー添加なしの誘電正接-フィラー添加ありの誘電正接)/フィラー添加なしの誘電正接×100 Reduction rate (%) of dielectric tangent (Df) = (dielectric tangent without added filler - dielectric tangent with added filler) / dielectric tangent without added filler x 100

◎:低減率50%以上
〇:低減率30%以上50%未満
△:低減率20%以上30%未満
×:低減率20%未満
◎: Reduction rate of 50% or more ◯: Reduction rate of 30% or more but less than 50% △: Reduction rate of 20% or more but less than 30% ×: Reduction rate of less than 20%

以上の結果を表1に示す。 The above results are shown in Table 1.

表1に示すように、実施例に係るシリカ系中空粒子及びこれを配合した樹脂組成物は、低誘電率化及び低誘電正接化が図られる。また、実施例に係るシリカ系中空粒子を配合した樹脂組成物形成用液は、濾過性及び注入性にも優れている。 As shown in Table 1, the silica-based hollow particles according to the examples and the resin composition containing them have a low dielectric constant and a low dielectric loss tangent. In addition, the resin composition forming liquid containing the silica-based hollow particles according to the examples also has excellent filterability and injectability.

本発明のシリカ系中空粒子は、半導体の絶縁材料のフィラーとして用いることができることから、産業上有用である。

INDUSTRIAL APPLICABILITY The silica-based hollow particles of the present invention can be used as a filler for insulating materials for semiconductors, and are therefore industrially useful.

Claims (6)

無孔質の外殻の内部に空洞を有し、平均粒子径(D50)が0.1~10μmのシリカ系中空粒子であって、
水に懸濁した際、浮遊粒子が0.5~7.0質量%、懸濁粒子が0~4.0質量%、沈降粒子が89.0~99.5質量%であり、
粒子径8.0μmを超える粗大粒子の含有量が、10体積%以下であることを特徴とするシリカ系中空粒子。
The silica-based hollow particles have a cavity inside a non-porous outer shell and an average particle diameter (D50) of 0.1 to 10 μm,
When suspended in water, the floating particles are 0.5 to 7.0% by mass, the suspended particles are 0 to 4.0% by mass, and the settling particles are 89.0 to 99.5% by mass;
A silica-based hollow particle, characterized in that the content of coarse particles having a particle diameter exceeding 8.0 μm is 10 volume % or less .
請求項1記載のシリカ系中空粒子を含むことを特徴とする樹脂組成物。 A resin composition comprising the silica-based hollow particles according to claim 1 . 珪酸アルカリ水溶液を熱風気流中で噴霧乾燥して中空粒子を調製する中空粒子調製工程と、
前記調製された中空粒子に含まれるアルカリを酸で中和して除去するアルカリ除去工程と、
前記アルカリ除去された中空粒子を600~1200℃で焼成する焼成工程と、
を有するシリカ系中空粒子の製造方法であって、
前記アルカリ除去工程と前記焼成工程の間に、中空粒子を分級して粒子径8.0μmを超える粗大粒子の含有量を10体積%以下とする分級工程を有することを特徴とするシリカ系中空粒子の製造方法。
a hollow particle preparation step of spray-drying an aqueous alkali silicate solution in a hot air stream to prepare hollow particles;
an alkali removing step of neutralizing and removing the alkali contained in the prepared hollow particles with an acid;
a calcination step of calcining the hollow particles from which the alkali has been removed at a temperature of 600 to 1200°C ;
A method for producing silica-based hollow particles comprising the steps of:
A method for producing silica-based hollow particles, comprising the steps of: classifying the hollow particles to reduce the content of coarse particles having a particle diameter exceeding 8.0 μm to 10 volume % or less, between the alkali removal step and the calcination step.
前記アルカリ除去工程において、中空粒子に含まれるアルカリ量を200ppm以下に低減することを特徴とする請求項記載のシリカ系中空粒子の製造方法。 4. The method for producing silica-based hollow particles according to claim 3 , wherein the amount of alkali contained in the hollow particles is reduced to 200 ppm or less in the alkali removal step. 前記分級工程が、アルカリ除去された中空粒子を乾燥した後に行われることを特徴とする請求項3又は4記載のシリカ系中空粒子の製造方法。 5. The method for producing silica-based hollow particles according to claim 3 , wherein the classification step is carried out after the hollow particles from which the alkali has been removed are dried. 前記分級工程の分級処理が、乾式分級処理であることを特徴とする請求項3~5のいずれか一項に記載のシリカ系中空粒子の製造方法。 The method for producing silica-based hollow particles according to any one of claims 3 to 5 , characterized in that the classification treatment in the classification step is a dry classification treatment.
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