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JP7685804B2 - Hole transport layer materials for perovskite solar cells - Google Patents
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JP7685804B2 - Hole transport layer materials for perovskite solar cells - Google Patents

Hole transport layer materials for perovskite solar cells Download PDF

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JP7685804B2
JP7685804B2 JP2024504691A JP2024504691A JP7685804B2 JP 7685804 B2 JP7685804 B2 JP 7685804B2 JP 2024504691 A JP2024504691 A JP 2024504691A JP 2024504691 A JP2024504691 A JP 2024504691A JP 7685804 B2 JP7685804 B2 JP 7685804B2
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晃平 山本
拓郎 村上
郵司 吉田
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Description

本願は、ペロブスカイト太陽電池の正孔輸送層材料に関する。 This application relates to hole transport layer materials for perovskite solar cells.

近年、光電変換層がペロブスカイト結晶層であるペロブスカイト太陽電池が注目されている。ペロブスカイト太陽電池の光電変換効率を向上させるため、正孔輸送層に添加剤が用いられている。非特許文献1には、Spiro-OMeTAD(2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene)にLiTFSI(lithium bis(trifluoromethane)sulfonimide)を添加した正孔輸送層が記載されている。しかしながら、LiTFSIを含有する正孔輸送層を備えるペロブスカイト太陽電池は、熱安定性が劣る。ペロブスカイト太陽電池の熱安定性に寄与する正孔輸送層への添加剤が求められている。In recent years, perovskite solar cells, whose photoelectric conversion layer is a perovskite crystal layer, have been attracting attention. To improve the photoelectric conversion efficiency of perovskite solar cells, additives are used in the hole transport layer. Non-Patent Document 1 describes a hole transport layer in which LiTFSI (lithium bis(trifluoromethane)sulfonimide) is added to Spiro-OMeTAD (2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene). However, perovskite solar cells with a hole transport layer containing LiTFSI have poor thermal stability. There is a demand for additives to the hole transport layer that contribute to the thermal stability of perovskite solar cells.

Adv. Energy Mater., 2019, 9, 1901519.Adv. Energy Mater., 2019, 9, 1901519.

本願は、このような事情に鑑みてなされたものであり、ペロブスカイト太陽電池の熱安定性に寄与する正孔輸送層材料を提供することを課題とする。This application has been made in consideration of these circumstances, and aims to provide a hole transport layer material that contributes to the thermal stability of perovskite solar cells.

本願のペロブスカイト太陽電池の正孔輸送層材料は、正孔輸送物質と、下記一般式(1)で表される添加物質を有する。なお、下記一般式(1)で、R、R、およびRは独立して炭素数1以上2以下のアルキル基であり、Rは炭素数2以上5以下のエーテル基である。 The hole transport layer material of the perovskite solar cell of the present application contains a hole transport substance and an additive substance represented by the following general formula (1): In the following general formula (1), R 1 , R 2 , and R 3 are independently an alkyl group having 1 to 2 carbon atoms, and R 4 is an ether group having 2 to 5 carbon atoms.

Figure 0007685804000001
Figure 0007685804000001

本願のペロブスカイト太陽電池は、透明電極層と、電子輸送層と、ペロブスカイト結晶層と、本願の正孔輸送層材料から構成される正孔輸送層と、電極層と、を有する。The perovskite solar cell of the present application has a transparent electrode layer, an electron transport layer, a perovskite crystal layer, a hole transport layer composed of the hole transport layer material of the present application, and an electrode layer.

本願のペロブスカイト太陽電池の正孔輸送層材料は、上記一般式(1)で表される添加物質を含有している。このため、本願の正孔輸送層材料を用いたペロブスカイト太陽電池は、熱安定性に優れている。The hole transport layer material of the perovskite solar cell of the present application contains the additive substance represented by the above general formula (1). Therefore, the perovskite solar cell using the hole transport layer material of the present application has excellent thermal stability.

実施形態のペロブスカイト太陽電池の断面模式図。FIG. 1 is a schematic cross-sectional view of a perovskite solar cell according to an embodiment. 実施例のペロブスカイト太陽電池の断面模式図。FIG. 1 is a schematic cross-sectional view of a perovskite solar cell according to an embodiment. 実施例のペロブスカイト太陽電池の熱安定性を示すグラフ。Graph showing the thermal stability of the perovskite solar cells of the examples.

以下、図面を参照しながら、本願の正孔輸送層材料およびペロブスカイト太陽電池について、実施形態と実施例に基づいて説明する。なお、本願の正孔輸送層材料は、本願のペロブスカイト太陽電池の構成部材である正孔輸送層の材料として説明する。図1は、本願の実施形態のペロブスカイト太陽電池10の断面を模式的に示している。ペロブスカイト太陽電池10は、基板12と、透明電極層14と、電子輸送層16と、ペロブスカイト結晶層18と、正孔輸送層20と、電極層22と、を備えている。Hereinafter, the hole transport layer material and perovskite solar cell of the present application will be described based on embodiments and examples with reference to the drawings. The hole transport layer material of the present application will be described as the material of the hole transport layer, which is a constituent member of the perovskite solar cell of the present application. FIG. 1 shows a schematic cross section of a perovskite solar cell 10 of an embodiment of the present application. The perovskite solar cell 10 includes a substrate 12, a transparent electrode layer 14, an electron transport layer 16, a perovskite crystal layer 18, a hole transport layer 20, and an electrode layer 22.

ペロブスカイト太陽電池10は、これらの構成部材以外に、(a)基板12の光入射側に設けられた拡散防止膜、(b)電子輸送層16とペロブスカイト結晶層18との界面に設けられた界面修飾膜もしくは補助層、(c)ペロブスカイト結晶層18と正孔輸送層20との界面に設けられた界面修飾膜もしくは補助層、または、(d)ペロブスカイト太陽電池10を大気中の水分から保護する封止材もしくは水分ゲッター材を、備えていてもよい。また、ペロブスカイト太陽電池は、ペロブスカイト太陽電池10での電子輸送層16と正孔輸送層20とが入れ替わった逆型構造太陽電池であってもよい。In addition to these components, the perovskite solar cell 10 may also include (a) a diffusion prevention film provided on the light incident side of the substrate 12, (b) an interface modification film or auxiliary layer provided at the interface between the electron transport layer 16 and the perovskite crystal layer 18, (c) an interface modification film or auxiliary layer provided at the interface between the perovskite crystal layer 18 and the hole transport layer 20, or (d) a sealant or moisture getter material that protects the perovskite solar cell 10 from moisture in the air. The perovskite solar cell may also be an inverted structure solar cell in which the electron transport layer 16 and the hole transport layer 20 in the perovskite solar cell 10 are interchanged.

本実施形態では、基板12がガラス基板であり、透明電極層14がFTO(Fluorine-doped tin oxide)層であり、電子輸送層16がナノ粒子から構成される酸化スズ(SnO)層であり、ペロブスカイト結晶層18がCs0.05(FA0.89MA0.110.95Pb(I0.89Br0.11層(FAはformamidinium、MAはMethylamine(以下同じ))であり、電極層22が金層である。ペロブスカイト結晶層18は、CHNHPbIおよびCH(NHPbIなどであってもよい。 In this embodiment, the substrate 12 is a glass substrate, the transparent electrode layer 14 is a fluorine-doped tin oxide (FTO) layer, the electron transport layer 16 is a tin oxide ( SnO2 ) layer composed of nanoparticles, the perovskite crystal layer 18 is a Cs0.05 ( FA0.89MA0.11 ) 0.95Pb ( I0.89Br0.11 ) triple layer (FA is formamidinium, MA is methylamine (same below)), and the electrode layer 22 is a gold layer. The perovskite crystal layer 18 may be CH3NH3PbI3 , CH( NH2 ) 2PbI3 , or the like.

正孔輸送層20は正孔輸送層材料から構成されている。正孔輸送層材料は、正孔輸送物質であるSpiro-OMeTADと、下記一般式(1)で表される添加物質を備えている。下記一般式(1)で、R、R、およびRは独立して炭素数1以上2以下のアルキル基で、Rは炭素数2以上5以下のエーテル基である。R、R、およびRが炭素数1以上2以下のアルキル基で、Rが炭素数2以上5以下のエーテル基で炭素数が少ないため、添加物質の親油性が強くなることに伴う正孔輸送層内での正孔輸送物質と添加物質の相分離が抑えられる。また、このようにR、R、R、およびRの炭素数が少ないため、添加物質の電気的抵抗の増大に伴うペロブスカイト太陽電池の電気的特性の悪化が抑えられる。 The hole transport layer 20 is composed of a hole transport layer material. The hole transport layer material includes Spiro-OMeTAD, which is a hole transport material, and an additive material represented by the following general formula (1). In the following general formula (1), R 1 , R 2 , and R 3 are independently an alkyl group having 1 to 2 carbon atoms, and R 4 is an ether group having 2 to 5 carbon atoms. Since R 1 , R 2 , and R 3 are alkyl groups having 1 to 2 carbon atoms, and R 4 is an ether group having 2 to 5 carbon atoms, which has a small number of carbon atoms, phase separation of the hole transport material and the additive material in the hole transport layer due to increased lipophilicity of the additive material is suppressed. In addition, since the number of carbon atoms of R 1 , R 2 , R 3 , and R 4 is small, deterioration of the electrical characteristics of the perovskite solar cell due to an increase in the electrical resistance of the additive material is suppressed.

Figure 0007685804000002
Figure 0007685804000002

正孔輸送層材料は、正孔輸送物質と添加物質を溶かす溶媒など、正孔輸送物質および添加物質以外の物質を含有していてもよい。また、正孔輸送層材料は、実質的にLiを含有しないことが好ましい。ペロブスカイト太陽電池10内でLiが拡散して、ペロブスカイト太陽電池10の熱安定性が低下するのを抑えるためである。正孔輸送層材料が実質的にLiを含有しないとは、正孔輸送層材料中のLiの質量含有量が2%以下であることをいう。正孔輸送層材料中のLiの質量含有量は、1%以下であることが好ましく、0.01%以下であることがより好ましい。さらに、正孔輸送層材料中のLiは、不可避的に含まれる場合を除き、含まれないことが最も好ましい。なお、正孔輸送層材料中のLiの質量含有量は、質量分析によって測定できる。The hole transport layer material may contain substances other than the hole transport material and the additive, such as a solvent that dissolves the hole transport material and the additive. In addition, it is preferable that the hole transport layer material does not substantially contain Li. This is to prevent Li from diffusing in the perovskite solar cell 10 and reducing the thermal stability of the perovskite solar cell 10. The hole transport layer material does not substantially contain Li means that the mass content of Li in the hole transport layer material is 2% or less. The mass content of Li in the hole transport layer material is preferably 1% or less, and more preferably 0.01% or less. Furthermore, it is most preferable that Li is not contained in the hole transport layer material, except when it is unavoidably contained. The mass content of Li in the hole transport layer material can be measured by mass spectrometry.

、R、およびRは直鎖アルキル基で、Rは直鎖エーテル基であることが好ましい。これらの中でも、RおよびRはメチル基で、Rはエチル基で、Rはメトキシエチル基であることがさらに好ましい。ペロブスカイト太陽電池10は、例えば以下のようにして製造する。スピンコーティング法、スパッタリング法、真空蒸着法、スプレー製膜法、ダイコート法、グラビア印刷法、またはスクリーン印刷法などを用いて、基板12上に透明電極層14を、透明電極層14上に電子輸送層16を、電子輸送層16上にペロブスカイト結晶層18を、ペロブスカイト結晶層18上に正孔輸送層20を、正孔輸送層20上に電極層22をそれぞれ形成する。 It is preferable that R 1 , R 2 , and R 3 are linear alkyl groups, and R 4 is linear ether group. Among these, it is more preferable that R 1 and R 2 are methyl groups, R 3 is ethyl group, and R 4 is methoxyethyl group. The perovskite solar cell 10 is manufactured, for example, as follows. Using a spin coating method, a sputtering method, a vacuum deposition method, a spray film forming method, a die coating method, a gravure printing method, a screen printing method, or the like, a transparent electrode layer 14 is formed on a substrate 12, an electron transport layer 16 is formed on the transparent electrode layer 14, a perovskite crystal layer 18 is formed on the electron transport layer 16, a hole transport layer 20 is formed on the perovskite crystal layer 18, and an electrode layer 22 is formed on the hole transport layer 20.

〔ペロブスカイト太陽電池の作製〕
(実施例1)
FTO付きガラス(日本板硝子株式会社、NSG TEC 10)のFTO面に、酸化スズ(IV)15質量%水分散液(Alfa Aesar社)を滴下およびスピンコーティングし、150℃で1時間乾燥させて、ガラス基板、透明電極層であるFTO層、および電子輸送層である酸化スズ層がこの順序で積層されている基体を得た。そして、下記の手順で、この基体の酸化スズ表面を酸素プラズマ中の酸素イオンで処理した。
[Fabrication of perovskite solar cells]
Example 1
A 15% by mass aqueous dispersion of tin (IV) oxide (Alfa Aesar) was dropped and spin-coated onto the FTO surface of glass with FTO (NSG TEC 10, Nippon Sheet Glass Co., Ltd.), and dried at 150° C. for 1 hour to obtain a substrate having a glass substrate, an FTO layer serving as a transparent electrode layer, and a tin oxide layer serving as an electron transport layer laminated in this order. The tin oxide surface of this substrate was then treated with oxygen ions in oxygen plasma using the following procedure.

まず、プラズマ処理装置(diener社、FEMTO(高周波電源の周波数40kHz、最大電力100W))の処理容器内で、酸化スズ層が上部電極と対向するように、下部電極上に基体を設置した。つぎに、大気中の水分および窒素を除去するため、真空排気により処理容器内の圧力を20Pa以下にした。そして、プラズマ発生のため、酸素ガスを処理容器内に導入し、処理容器内の圧力を100Paに保ち、上部電極と下部電極との間に100Wの高周波電力を供給して、30秒間プラズマクリーニングを行った。First, in the processing vessel of a plasma processing apparatus (Diener, FEMTO (frequency of high frequency power supply: 40 kHz, maximum power: 100 W)), the substrate was placed on the lower electrode so that the tin oxide layer faced the upper electrode. Next, in order to remove moisture and nitrogen from the atmosphere, the pressure inside the processing vessel was reduced to 20 Pa or less by vacuum evacuation. Then, to generate plasma, oxygen gas was introduced into the processing vessel, the pressure inside the processing vessel was kept at 100 Pa, and 100 W of high frequency power was supplied between the upper and lower electrodes to perform plasma cleaning for 30 seconds.

つぎに、基体に含まれている溶媒を除去するため、この基体を150℃で1時間加熱した。そして、酸素ガスを処理容器内に導入し、処理容器内の圧力を100Paに保ち、上部電極と下部電極との間に100Wの高周波電力を供給し、酸素ガスをプラズマ化して酸素プラズマを生成させ、酸素プラズマ中の酸素イオンを用いて、酸化スズ層の表面処理を30秒間行った。Next, in order to remove the solvent contained in the substrate, the substrate was heated at 150°C for 1 hour. Then, oxygen gas was introduced into the treatment vessel, the pressure inside the treatment vessel was kept at 100 Pa, 100 W of high-frequency power was supplied between the upper electrode and the lower electrode, and the oxygen gas was converted into plasma to generate oxygen plasma. The surface of the tin oxide layer was treated for 30 seconds using oxygen ions in the oxygen plasma.

つぎに、DMF:560μLとDMSO:140μLの混合液に、FAI:123mg、PbI:382mg、MABr:14mg、PbBr:36mg、およびCsIのDMSO溶液(1.5M)29μLをそれぞれ溶解して、Cs0.05(FA0.89MA0.110.95Pb(I0.89Br0.11の前駆体溶液を調製した。そして、上記で表面処理した酸化スズ層上に、この前駆体溶液を1000rpmで10秒間スピンコートした後、少量のクロロベンゼンを6000rpmで20秒間、さらにスピンコートして、均一なペロブスカイト前駆体薄膜を得た。 Next, 123 mg of FAI, 382 mg of PbI2, 14 mg of MABr, 36 mg of PbBr2, and 29 μL of a DMSO solution of CsI (1.5 M) were dissolved in a mixture of 560 μL of DMF and 140 μL of DMSO to prepare a precursor solution of Cs0.05 ( FA0.89MA0.11 ) 0.95Pb ( I0.89Br0.11 ) 3 . Then, this precursor solution was spin-coated on the tin oxide layer surface-treated as above at 1000 rpm for 10 seconds, and then a small amount of chlorobenzene was further spin-coated at 6000 rpm for 20 seconds to obtain a uniform perovskite precursor thin film.

つぎに、ホットプレートにより100℃で1時間加熱して、Cs0.05(FA0.89MA0.110.95Pb(I0.89Br0.11層を形成し、基板、透明電極層、電子輸送層、およびペロブスカイト結晶層を備える積層体を得た。そして、クロロベンゼン0.35mLにSpiro-OMeTAD:31mgと下記化学式(2)で表されるN-エチル-N-(2-メトキシエチル)-N,N-ジメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド(富士フイルム和光純薬株式会社)2μLを溶かし、4-tert-ブチルピリジン11μLを添加して、正孔輸送層材料である正孔輸送層前駆体溶液を得た。 Next, the substrate was heated at 100°C for 1 hour on a hot plate to form three layers of Cs0.05 ( FA0.89MA0.11 ) 0.95Pb ( I0.89Br0.11 ), and a laminate including a substrate, a transparent electrode layer, an electron transport layer, and a perovskite crystal layer was obtained. Then, 31mg of Spiro-OMeTAD and 2μL of N-ethyl-N-(2-methoxyethyl)-N,N-dimethylammonium=bis(trifluoromethanesulfonyl)imide (FUJIFILM Wako Pure Chemical Industries, Ltd.) represented by the following chemical formula (2) were dissolved in 0.35mL of chlorobenzene, and 11μL of 4-tert-butylpyridine was added to obtain a hole transport layer precursor solution, which is a hole transport layer material.

Figure 0007685804000003
Figure 0007685804000003

つぎに、上記で得た積層体のCs0.05(FA0.89MA0.110.95Pb(I0.89Br0.11層の表面に、この正孔輸送層前駆体溶液を3000rpmで30秒間スピンコートした。そして、65℃で10分間乾燥させて、正孔輸送層を形成した。この正孔輸送層の表面に、真空蒸着機を用いて厚さ50nmの金層を蒸着し、ペロブスカイト太陽電池部材を得た。なお、このペロブスカイト太陽電池部材は、上記実施形態で記載したペロブスカイト太陽電池に相当する。実施例では、ペロブスカイト太陽電池部材と下記の筐体部材を併せたものがペロブスカイト太陽電池である。 Next, the hole transport layer precursor solution was spin-coated at 3000 rpm for 30 seconds on the surface of the three layers of Cs0.05 ( FA0.89MA0.11 ) 0.95Pb ( I0.89Br0.11 ) of the laminate obtained above. Then, it was dried at 65° C for 10 minutes to form a hole transport layer. A gold layer having a thickness of 50 nm was deposited on the surface of this hole transport layer using a vacuum deposition machine to obtain a perovskite solar cell member. Note that this perovskite solar cell member corresponds to the perovskite solar cell described in the above embodiment. In the examples, the perovskite solar cell is a combination of the perovskite solar cell member and the following housing member.

つぎに、このペロブスカイト太陽電池部材に筐体部材を加えて、ペロブスカイト太陽電池とした。すなわち、ガラス板50の表面の中央に酸化カルシウム52を担持し、周辺に直径10μmのガラス球を含む紫外線硬化型接着剤54を厚み0.05mm、幅0.2mmでスペーサーとして塗布して、封止部材を得た。そして、窒素雰囲気で、上記で得たペロブスカイト太陽電池部材にこの封止部材を重ね、紫外線を照射して接着剤54を硬化させ、実施例1のペロブスカイト太陽電池を作製した。図2は、このペロブスカイト太陽電池の断面を模式的に示している。Next, a housing member was added to this perovskite solar cell member to form a perovskite solar cell. That is, calcium oxide 52 was supported in the center of the surface of a glass plate 50, and a UV-curable adhesive 54 containing glass spheres with a diameter of 10 μm was applied to the periphery to a thickness of 0.05 mm and a width of 0.2 mm as a spacer to obtain a sealing member. Then, in a nitrogen atmosphere, this sealing member was placed on the perovskite solar cell member obtained above, and UV rays were irradiated to cure the adhesive 54, thereby producing the perovskite solar cell of Example 1. Figure 2 shows a schematic cross section of this perovskite solar cell.

(比較例1)
クロロベンゼン0.7mLにSpiro-OMeTAD61mgとLiTFSI(シグマアルドリッチ社)10mgを溶かし、4-tert-ブチルピリジン22μLを添加して、正孔輸送層前駆体溶液を得た。これ以外は実施例1と同様にして、比較例1のペロブスカイト太陽電池を得た。
(Comparative Example 1)
A hole transport layer precursor solution was obtained by dissolving 61 mg of Spiro-OMeTAD and 10 mg of LiTFSI (Sigma-Aldrich) in 0.7 mL of chlorobenzene and adding 22 μL of 4-tert-butylpyridine. A perovskite solar cell of Comparative Example 1 was obtained in the same manner as in Example 1 except for this.

(比較例2)
実施例1のN-エチル-N-(2-メトキシエチル)-N,N-ジメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド2μLに代えて、下記化学式(3)で表される1-ブチル-1-メチルピロリジニウム=ビス(トリフルオロメチルスルホニル)イミド(富士フイルム和光純薬株式会社)1μLを用いた点を除き、実施例1と同様にして比較例2のペロブスカイト太陽電池を得た。
(Comparative Example 2)
A perovskite solar cell of Comparative Example 2 was obtained in the same manner as in Example 1, except that 1 μL of 1-butyl-1-methylpyrrolidinium=bis(trifluoromethylsulfonyl)imide (FUJIFILM Wako Pure Chemical Industries, Ltd.) represented by the following chemical formula (3) was used instead of 2 μL of N-ethyl-N-(2-methoxyethyl)-N,N-dimethylammonium=bis(trifluoromethanesulfonyl)imide in Example 1.

Figure 0007685804000004
Figure 0007685804000004

(比較例3)
実施例1のN-エチル-N-(2-メトキシエチル)-N,N-ジメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド2μLに代えて、下記化学式(4)で表されるトリブチルメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド(富士フイルム和光純薬株式会社)3μLを用いた点を除き、実施例1と同様にして比較例3のペロブスカイト太陽電池を得た。
(Comparative Example 3)
A perovskite solar cell of Comparative Example 3 was obtained in the same manner as in Example 1, except that 3 μL of tributylmethylammonium=bis(trifluoromethanesulfonyl)imide (FUJIFILM Wako Pure Chemical Industries, Ltd.) represented by the following chemical formula (4) was used instead of 2 μL of N-ethyl-N-(2-methoxyethyl)-N,N-dimethylammonium=bis(trifluoromethanesulfonyl)imide in Example 1.

Figure 0007685804000005
Figure 0007685804000005

(比較例4)
実施例1のN-エチル-N-(2-メトキシエチル)-N,N-ジメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド2μLに代えて、下記化学式(5)で表される1-アリル-3-メチルイミダゾリウム=ビス(トリフルオロメタンスルホニル)イミド(富士フイルム和光純薬株式会社)5μLを用いた点を除き、実施例1と同様にして比較例4のペロブスカイト太陽電池を得た。
(Comparative Example 4)
A perovskite solar cell of Comparative Example 4 was obtained in the same manner as in Example 1, except that 5 μL of 1-allyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (FUJIFILM Wako Pure Chemical Industries, Ltd.) represented by the following chemical formula (5) was used instead of 2 μL of N-ethyl-N-(2-methoxyethyl)-N,N-dimethylammonium bis(trifluoromethanesulfonyl)imide in Example 1.

Figure 0007685804000006
Figure 0007685804000006

〔ペロブスカイト太陽電池の評価〕
(初期特性)
ソーラーシミュレータ(分光計器株式会社製、OTENTO-SUN)を用いて、実施例1と比較例1から比較例4までのペロブスカイト太陽電池にAM1.5の擬似太陽光(強度1000W/m)を照射した。ソースメータ(ケースレーインスツルメンツ社(Keithley Instruments, Inc)製、Keithley 2400)により電流-電圧の関係をプロットした曲線から、短絡電流密度、開放電圧、曲線因子、および光電変換効率を求めた。その結果を表1に示す。
[Evaluation of Perovskite Solar Cells]
(Initial characteristics)
Using a solar simulator (OTENTO-SUN, manufactured by Bunkoukeiki Co., Ltd.), the perovskite solar cells of Example 1 and Comparative Examples 1 to 4 were irradiated with AM1.5 simulated sunlight (intensity 1000 W/m 2 ). The short-circuit current density, open circuit voltage, fill factor, and photoelectric conversion efficiency were determined from curves plotting the current-voltage relationship using a source meter (Keithley 2400, manufactured by Keithley Instruments, Inc.). The results are shown in Table 1.

Figure 0007685804000007
Figure 0007685804000007

表1に示すように、実施例1のペロブスカイト太陽電池の短絡電流密度、開放電圧、曲線因子、および光電変換効率は、比較例1のペロブスカイト太陽電池の短絡電流密度、開放電圧、曲線因子、および光電変換効率と同等であった。すなわち、添加物質N-エチル-N-(2-メトキシエチル)-N,N-ジメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド(上記化学式(2))を含む正孔輸送層を備えるペロブスカイト太陽電池は、添加物質LiTFSIを含む正孔輸送層を備えるペロブスカイト太陽電池と同等の初期特性を発揮した。As shown in Table 1, the short-circuit current density, open-circuit voltage, fill factor, and photoelectric conversion efficiency of the perovskite solar cell of Example 1 were equivalent to the short-circuit current density, open-circuit voltage, fill factor, and photoelectric conversion efficiency of the perovskite solar cell of Comparative Example 1. In other words, the perovskite solar cell having a hole transport layer containing the additive substance N-ethyl-N-(2-methoxyethyl)-N,N-dimethylammonium=bis(trifluoromethanesulfonyl)imide (chemical formula (2) above) exhibited initial characteristics equivalent to those of the perovskite solar cell having a hole transport layer containing the additive substance LiTFSI.

また、比較例2から比較例4までのペロブスカイト太陽電池の短絡電流密度、開放電圧、曲線因子、および光電変換効率は、実施例1のペロブスカイト太陽電池の短絡電流密度、開放電圧、曲線因子、および光電変換効率と比べて小さかった。すなわち、単に、ビス(トリフルオロメタンスルホニル)イミドアニオンを含有する物質を正孔輸送層へ添加するだけでは、不十分である。上記一般式(1)で表される添加物質を正孔輸送層に添加することによって、ペロブスカイト太陽電池の良好な初期特性が得られた。 In addition, the short-circuit current density, open-circuit voltage, fill factor, and photoelectric conversion efficiency of the perovskite solar cells of Comparative Example 2 to Comparative Example 4 were smaller than the short-circuit current density, open-circuit voltage, fill factor, and photoelectric conversion efficiency of the perovskite solar cell of Example 1. In other words, simply adding a substance containing bis(trifluoromethanesulfonyl)imide anion to the hole transport layer is insufficient. By adding the additive substance represented by the above general formula (1) to the hole transport layer, good initial characteristics of the perovskite solar cell were obtained.

(熱安定性)
実施例1、比較例1、および比較例2のペロブスカイト太陽電池を用いて、上記の初期特性での光電変換効率を求めた方法と同様にして、85℃の暗所下での光電変換効率の経時変化を測定した。その結果を図3に示す。図3に示すように、実施例1のペロブスカイト太陽電池では、960時間後でも光電変換効率が初期値の72.5%あった。これに対して、比較例1のペロブスカイト太陽電池では、960時間後で光電変換効率が初期値の51.6%まで下がった。
(thermal stability)
Using the perovskite solar cells of Example 1, Comparative Example 1, and Comparative Example 2, the change in photoelectric conversion efficiency over time was measured in a dark place at 85°C in the same manner as in determining the photoelectric conversion efficiency with the initial characteristics described above. The results are shown in Figure 3. As shown in Figure 3, in the perovskite solar cell of Example 1, the photoelectric conversion efficiency was 72.5% of the initial value even after 960 hours. In contrast, in the perovskite solar cell of Comparative Example 1, the photoelectric conversion efficiency decreased to 51.6% of the initial value after 960 hours.

すなわち、添加物質としてN-エチル-N-(2-メトキシエチル)-N,N-ジメチルアンモニウム=ビス(トリフルオロメタンスルホニル)イミド(上記化学式(2))を含む正孔輸送層を備えるペロブスカイト太陽電池は、添加物質としてLiTFSIを含む正孔輸送層を備えるペロブスカイト太陽電池よりも、熱安定性に優れていた。なお、比較例2のペロブスカイト太陽電池では、456時間後で光電変換効率が初期値の16.4%まで低下した。That is, a perovskite solar cell having a hole transport layer containing N-ethyl-N-(2-methoxyethyl)-N,N-dimethylammonium=bis(trifluoromethanesulfonyl)imide (chemical formula (2) above) as an additive had better thermal stability than a perovskite solar cell having a hole transport layer containing LiTFSI as an additive. Note that in the perovskite solar cell of Comparative Example 2, the photoelectric conversion efficiency decreased to 16.4% of the initial value after 456 hours.

10 ペロブスカイト太陽電池
12 基板
14 透明電極層
16 電子輸送層
18 ペロブスカイト結晶層
20 正孔輸送層
22 電極層
10 Perovskite solar cell 12 Substrate 14 Transparent electrode layer 16 Electron transport layer 18 Perovskite crystal layer 20 Hole transport layer 22 Electrode layer

Claims (2)

正孔輸送物質と、下記式(1)で表される添加物質とを有するペロブスカイト太陽電池の正孔輸送層材料。
Figure 0007685804000008

前記R および前記R がメチル基で、前記R がエチル基で、前記R がメトキシエチル基である
A hole transport layer material for a perovskite solar cell, comprising a hole transport substance and an additive substance represented by the following formula (1):
Figure 0007685804000008

The R 1 and R 2 are methyl groups, the R 3 is an ethyl group, and the R 4 is a methoxyethyl group .
透明電極層と、電子輸送層と、ペロブスカイト結晶層と、請求項1に記載の正孔輸送層材料から構成される正孔輸送層と、電極層とを有するペロブスカイト太陽電池。 13. A perovskite solar cell comprising: a transparent electrode layer; an electron transport layer; a perovskite crystal layer; a hole transport layer composed of the hole transport layer material according to claim 1 ; and an electrode layer.
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