JP7699092B2 - Nmosスイッチ駆動回路及び電源装置 - Google Patents
Nmosスイッチ駆動回路及び電源装置 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33538—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type
- H02M3/33546—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type with automatic control of the output voltage or current
- H02M3/33553—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type with automatic control of the output voltage or current with galvanic isolation between input and output of both the power stage and the feedback loop
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- H03—ELECTRONIC CIRCUITRY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/002—Switching arrangements with several input- or output terminals
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
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- H—ELECTRICITY
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- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
- H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Description
電源ユニットは、第一電圧を出力するために用いられ、
スイッチユニットは、電源ユニットと第一インターフェースとの間に電気的に接続されており、電源ユニットと第一インターフェースとの間の電気的接続を確立するか又は切断するために用いられ、且つスイッチユニットは少なくとも1つのNMOSスイッチを含み、
電源変換ユニットの一端は電源ユニットに接続され、電源変換ユニットの他端は駆動ユニットを介してスイッチユニットに電気的に接続され、
電源変換ユニット、第一電圧を一定の駆動電圧に変換してから駆動ユニットを介してスイッチユニットに出力して、スイッチユニットを駆動して導通させて、電源ユニットと第一インターフェースとの間の電気的接続を確立するために用いられる。
Claims (9)
- 第一インターフェースを有する電源装置に適用されるNMOSスイッチ駆動回路であって、前記NMOSスイッチ駆動回路は、電源ユニットと、スイッチユニットと、電源変換ユニットと、駆動ユニットと、制御ユニットと、を含み、
前記電源ユニットは、第一電圧を出力するために用いられ、
前記スイッチユニットは、前記電源ユニットと前記第一インターフェースとの間に電気的に接続されており、前記電源ユニットと前記第一インターフェースとの間の電気的接続を確立するか又は切断するために用いられ、且つ前記スイッチユニットは少なくとも1つのNMOSスイッチを含み、
前記電源変換ユニットの一端は前記電源ユニットに接続され、前記電源変換ユニットの他端は前記駆動ユニットを介して前記スイッチユニットに電気的に接続され、
前記電源変換ユニットは、第一電圧を一定の駆動電圧に変換してから前記駆動ユニットを介して前記スイッチユニットに出力して、前記スイッチユニットを駆動することにより、前記スイッチユニットを導通させて、前記電源ユニットと前記第一インターフェースとの間の電気的接続を確立するために用いられ、
前記NMOSスイッチのソースは、基準ゼロ点に接続され、
前記制御ユニットは、前記電源変換ユニット及び前記駆動ユニットにそれぞれ電気的に接続され、
前記制御ユニットは、前記電源変換ユニットに変換信号を出力し且つ前記駆動ユニットに駆動信号を出力するために用いられ、
前記電源変換ユニットは、前記変換信号に応じて前記第一電圧を前記駆動電圧に変換し、
前記駆動ユニットは、前記駆動信号に応じて前記駆動電圧を前記スイッチユニットに出力して、前記スイッチユニットを駆動して導通させる、
ことを特徴とするNMOSスイッチ駆動回路。 - 前記電源装置は第二インターフェースをさらに有し、
前記NMOSスイッチ駆動回路は、電流検出ユニットをさらに含み、
前記電流検出ユニットは、前記電源ユニットと前記第二インターフェースとの間に電気的に接続されており、前記電源ユニットの出力電流を検出するために用いられ、
前記制御ユニットは、前記電流検出ユニットに電気的に接続され、前記電流検出ユニットによって検出された電流信号を収集し、
前記制御ユニットによって収集された電流信号が予め設定された閾値よりも大きい場合、前記制御ユニットは前記変換信号及び/又は前記駆動信号の出力を停止する、
ことを特徴とする請求項1に記載のNMOSスイッチ駆動回路。 - 前記スイッチユニットは、前記電源ユニットの正極と前記第一インターフェースとの間に電気的に接続されている、
ことを特徴とする請求項1~2のいずれか一項に記載のNMOSスイッチ駆動回路。 - 前記電源変換ユニットは、第一電子スイッチと、第二電子スイッチと、変換電源と、をさらに含み、
前記第一電子スイッチの制御端は前記制御ユニットに接続され、前記第一電子スイッチの第一接続端は前記電源ユニットの負極に接続され、前記第一電子スイッチの第二接続端は前記第二電子スイッチの制御端に接続され、
前記第二電子スイッチの第一接続端は前記電源ユニットの正極に接続され、前記第二電子スイッチの第二接続端は前記変換電源の第一入力端に接続され、
前記変換電源の第二入力端は前記電源ユニットの負極に接続され、前記変換電源の第一出力端は前記駆動ユニットに接続され、前記変換電源の第二出力端は基準ゼロ点に接続される、
ことを特徴とする請求項1~3のいずれか一項に記載のNMOSスイッチ駆動回路。 - 前記変換電源は、広い入力範囲の安定化電源である、
ことを特徴とする請求項4に記載のNMOSスイッチ駆動回路。 - 前記駆動ユニットは、光カプラーと、第三電子スイッチと、第四電子スイッチと、を含み、
前記光カプラーの第一入力端は前記制御ユニットに接続され、前記光カプラーの第二入力端は前記電源ユニットの負極に接続され、前記光カプラーの第一出力端は前記第三電子スイッチの制御端に接続され、前記光カプラーの第二出力端は基準ゼロ点に接続され、
前記第三電子スイッチの第一接続端は基準ゼロ点に接続され、前記第三電子スイッチの第二接続端は前記第四電子スイッチの第一接続端に接続され、
前記第四電子スイッチの制御端は前記電源変換ユニットに接続され、前記第四電子スイッチの第二接続端は前記電源変換ユニットに接続される、
ことを特徴とする請求項1~5のいずれか一項に記載のNMOSスイッチ駆動回路。 - 前記光カプラーは、発光素子及び受光素子を含み、
前記発光素子の第一端は前記光カプラーの第一入力端として機能し、前記発光素子の第二端は前記光カプラーの第二入力端として機能し、前記受光素子の第一端は前記光カプラーの第一出力端として機能し、前記受光素子の第二端は前記光カプラーの第二出力端として機能する、
ことを特徴とする請求項6に記載のNMOSスイッチ駆動回路。 - 前記駆動ユニットは、光カプラー、第三電子スイッチ、第四電子スイッチ、第五電子スイッチ及び第六電子スイッチを含み、
前記光カプラーは、発光素子及び受光素子を含み、
前記発光素子の第一端は前記光カプラーの第一入力端として機能し、前記発光素子の第二端は前記光カプラーの第二入力端として機能し、前記受光素子の第一端は前記光カプラーの第一出力端として機能し、前記受光素子の第二端は前記光カプラーの第二出力端として機能し、
前記光カプラーの第一入力端は前記制御ユニットに接続され、前記駆動信号を受信するために用いられ、前記光カプラーの第二入力端は前記電源ユニットの負極に接続され、前記光カプラーの第一出力端は前記第六電子スイッチの制御端に接続され、前記光カプラーの第二出力端は基準ゼロ点に接続され、
前記第三電子スイッチの第一接続端は基準ゼロ点に接続され、前記第三電子スイッチの第二接続端は前記第四電子スイッチの第一接続端に接続され、
前記第四電子スイッチの制御端は前記電源変換ユニットに接続され、前記第四電子スイッチの第二接続端は前記電源変換ユニットに接続され、前記第四電子スイッチの第一接続端は、前記第四電子スイッチがオンになる時に前記駆動電圧を出力するために用いられ、
前記第五電子スイッチの制御端は基準ゼロ点に接続され、前記第五電子スイッチの第一接続端は基準ゼロ点に接続され、前記第五電子スイッチの第二接続端は前記第三電子スイッチの制御端に接続され、前記第五電子スイッチの制御端はさらに前記第六電子スイッチの第一接続端に接続され、
前記第六電子スイッチの制御端は前記光カプラーの第一出力端に接続され、前記第六電子スイッチの制御端はさらに前記電源変換ユニットに接続され、前記第六電子スイッチの第二接続端は前記電源変換ユニットに接続される、
ことを特徴とする請求項1に記載のNMOSスイッチ駆動回路。 - 第一インターフェース及び第二インターフェースを含む電源装置であって、
前記電源装置は、請求項1~8のいずれか一項に記載のNMOSスイッチ駆動回路をさらに含み、前記NMOSスイッチ駆動回路は前記第一インターフェース及び前記第二インターフェースを介してロードに接続される、
ことを特徴とする電源装置。
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