JP7705247B2 - Electrode-embedding member, substrate-holding member, and method for manufacturing same - Google Patents

Description

The present invention relates to an electrode-embedded member, a substrate-holding member, and a method for manufacturing the same.

Conventionally, electrode-embedded members for electrostatic chucks and other devices used in semiconductor manufacturing processes have been manufactured by embedding an electrode layer inside ceramics and sintering the entire assembly to form a ceramic sintered body.

In recent years, electrode-embedded members such as electrostatic chucks used in semiconductor manufacturing processes are being required to be thin in order to transfer heat quickly (heat passage) due to the increasing amount of heat generated in the process. However, in conventional electrode-embedded members, it was difficult to make the electrode-embedded members thin when the electrostatic attraction electrode layer and the heater layer were different layers. For example, in the case of an electrostatic chuck with a built-in heater, at least two layers of electrodes were required, and the two layers of electrodes needed to be spaced apart by a certain distance for insulation, and an additional insulating layer was required to insulate the electrodes from the outside. Therefore, if the entire electrostatic chuck was made of a ceramic sintered body, its thickness had to be thick to a certain extent.

Patent document 1 discloses a technology for a wafer heating device with electrostatic attraction function, which is configured with a conductive heat layer formed on one side of a support substrate and a conductive electrostatic attraction electrode formed on the other side, and further formed with these heat layer and insulating layer, and is characterized in that the insulating layer covering the electrostatic attraction electrode has a surface resistivity ρsE of the part on the side of the object to be attracted that is smaller than the surface resistivity ρsE of the part on the electrostatic attraction electrode side. Patent document 1 states that the support substrate is preferably made of a material mainly composed of any of the following: silicon nitride sintered body, boron nitride sintered body, mixed sintered body of boron nitride and aluminum nitride, alumina sintered body, aluminum nitride sintered body, pyrolytic boron nitride, and pyrolytic boron nitride coated graphite.

Patent Document 2 discloses a technology for an electrostatic chuck that includes a base, an electrode layer formed on the upper surface of the base, and an upper insulating layer formed by thermal spraying on the base so as to cover the electrode layer, with the aim of providing an electrostatic chuck that can be easily manufactured even if the internal electrode structure has a complex shape, that has little deformation of the base, and that exhibits excellent voltage resistance characteristics, in which the base is made of a ceramic having a Young's modulus of 60 GPa or more, and the electrode layer is formed by a plating process. It also discloses that the difference in the average thermal expansion coefficients of the materials constituting the base and the upper insulating layer at 20 to 30°C is 2×10 ^-6 /°C or less, the thickness of the base is 2 to 10 mm, and the thickness of the upper insulating layer is 0.15 to 1.00 mm.

WO2007/043519 JP 2007-194393 A

In electrode-embedded members having a heater function, in which an insulating layer is provided later as in Patent Documents 1 and 2, the heater electrode (heat resistor) is formed on a substrate such as a sintered body by film formation, etc., but the variation in the film formation process at this time is directly reflected in the temperature distribution of the electrode-embedded member. For this reason, it is preferable that the surface of the sintered body substrate is flat. In addition, in order to improve the temperature uniformity of the heater, the resistance value is sometimes adjusted by trimming the heating resistor. However, if the flatness of the sintered body substrate on which the heater electrode is formed is poor, the variation in the film formation increases, and trimming processing may also be difficult. In addition, even if the flatness of the sintered body substrate on which the heater electrode is formed is good, the flatness may deteriorate during film formation depending on the film formation method.

In Patent Document 1, a method for forming electrodes on both sides of an insulating ceramic substrate is used in which electrodes are formed on both sides of a BN sintered body using a thermal CVD method using pyrolytic carbon, and an insulating layer of pyrolytic boron nitride is then formed on top of that, making it possible to reduce the overall thickness by thinning the substrate and insulating layer. However, the thermal CVD method requires a temperature of nearly 2000°C, and thermal deformation of the substrate occurs after film formation.

In addition, Patent Document 2 does not consider the passage of heat between the front and back surfaces, as it does not envisage a configuration in which electrodes are formed on both sides of the base. Also, although it is stated that various ceramics can be used for the base, the only examples described are those in which both the base and the sprayed film are made of aluminum oxide.

The present invention was made in consideration of the above circumstances, and aims to provide an electrode-embedding member, a substrate-holding member, and a manufacturing method thereof, which have good heat conduction, uniform temperature distribution, and can reduce chemical contamination when used in processes such as plasma etching, and which can easily form an insulating layer that is thinner and more uniform than when an insulating layer is formed from a sintered oxide ceramic body.

(1) In order to achieve the above object, the present invention provides an electrode-embedded member, which is characterized by comprising a substrate made of an AlN sintered body and formed into a flat plate shape, an electrode provided on one main surface of the substrate, a heating resistor provided on the other main surface of the substrate, a first oxide ceramics sprayed film covering the one main surface of the substrate, and a second oxide ceramics sprayed film covering the other main surface of the substrate. The electrode-embedded member of the present invention further comprises the technical feature described in (3) below. Furthermore, the first oxide ceramics sprayed film has a porosity of 0.1 to 5%, and the first oxide ceramics sprayed film contains one or more oxide ceramics at 99 wt % or more, and the second oxide ceramics sprayed film has a porosity of 1 to 10%, and the second oxide ceramics sprayed film contains one or more oxide ceramics at 99 wt % or more.

In this way, by forming the substrate from an AlN sintered body, the thermal conductivity can be increased, heat can be easily transmitted, and the temperature distribution can be uniform. In addition, since the oxide ceramic sprayed film can use raw materials with a higher purity than the oxide ceramic sintered body, chemical contamination can be reduced when used in processes such as plasma etching. In addition, an insulating layer with a thinner and more uniform thickness can be easily formed compared to when an insulating layer is formed from an oxide ceramic sintered body. In addition, since the sprayed film can be formed after the heating resistor is formed on the substrate, trimming can be easily performed to adjust the resistance value, etc. of the heating resistor as necessary. Furthermore, the electrode-embedded member of the present invention can achieve the technical effect described in (3) below.

(2) The electrode-embedded member of the present invention is also characterized in that the thickness of the electrode-embedded member in the direction perpendicular to the one of the main surfaces is 1 mm or more and 8 mm or less.

In this way, by reducing the overall thickness of the electrode-embedded member, high thermal conductivity is achieved and heat transfer is improved.

(3) In addition, the electrode-embedded member of the present invention is characterized in that the flatness of the other main surface of the substrate is 5 μm or less.

In this way, the flatness of the plane on which the heating resistor is provided is high, so the heating resistor is formed more uniformly and the variation in the resistance value of the heating resistor can be suppressed. This allows for an even heat distribution. Furthermore, even if the heating resistor is trimmed, it can be trimmed with high precision and the effect can be fully achieved.

(4) In addition, in the electrode-embedded member of the present invention, the heating resistor has a plurality of partial heating resistors to which different voltages can be applied.

In this way, by arranging multiple partial heating resistors, each of which can be applied with a different voltage, on the same plane (so-called multi-zone configuration), the amount of heat generated can be adjusted for each partial heating resistor by adjusting the output of each of the multiple electrodes (terminals), and the temperature distribution of the electrode-embedded member can be adjusted.

を満たすことを特徴としている。 (5) In the electrode-embedded member of the present invention, the number N of terminals connected to the plurality of partial heating resistors is expressed by the following formula using a ceiling function for the number n of the plurality of partial heating resistors:

It is characterized by satisfying the following.

In the case of a multi-zone configuration, many partial heating resistors are arranged on one plane, and corresponding terminals are required. However, if the number of terminals becomes too large, the positions of the terminals become cold spots, causing temperature unevenness. In particular, when the electrode embedding material is thin, the effect of cold spots has a significant impact on the temperature distribution on the substrate mounting surface. However, by devising a connection pattern for the heating resistors, it is possible to reduce the number of terminals sufficiently to satisfy the above formula even when many partial heating resistors are arranged, and to achieve a uniform temperature distribution on the substrate mounting surface.

(6) The substrate holding member of the present invention is characterized by comprising the electrode-embedded member described in any one of (1) to (6) above, and a cooling member provided on the second oxide ceramic sprayed film side of the electrode-embedded member and having a refrigerant flow path therein.

By providing a substrate holding member with a cooling member in which a refrigerant flow path is formed in addition to the electrode-embedded member, the sprayed film formed on the surface of the electrode-embedded member on which the heating resistor is provided functions as a thermal resistance layer in addition to providing electrical insulation, so that even if the temperature of the substrate placement surface of the electrode-embedded member is high, the temperature of the surface of the electrode-embedded member facing the cooling member can be kept low, expanding the range of applications in semiconductor manufacturing processes.

(7) Furthermore, a manufacturing method for an electrode-embedded member of the present invention is a manufacturing method for an electrode-embedded member, comprising the steps of: forming an AlN ceramic raw material powder and sintering it to produce a flat substrate made of an AlN sintered body; forming an electrode on one main surface of the substrate; adjusting the flatness of the other main surface of the substrate to 5 μm or less; forming a heating resistor on the other main surface of the substrate; spraying a first oxide ceramic spray raw material powder onto the one main surface of the substrate to form a first oxide ceramic sprayed film; and spraying a second oxide ceramic spray raw material powder onto the other main surface of the substrate to form a second oxide ceramic sprayed film. Furthermore, the first oxide ceramic sprayed film has a porosity of 0.1 to 5% and contains one or more oxide ceramics at 99 wt% or more, and the second oxide ceramic sprayed film has a porosity of 1 to 10% and contains one or more oxide ceramics at 99 wt% or more.

In this way, by making the substrate out of an AlN sintered body, the thermal conductivity can be reduced, allowing for good heat transfer. In addition, since the oxide ceramic sprayed film has a higher purity than an oxide ceramic sintered body, it is possible to reduce chemical contamination when used in processes such as plasma etching, and it is also possible to easily form a thinner insulating layer than when an insulating layer is formed from an oxide ceramic sintered body. In addition, since the sprayed film can be formed after the heating resistor is formed on the substrate, trimming can be easily performed to adjust the resistance value, etc. of the heating resistor as necessary.

(8) A method for manufacturing a substrate holding member of the present invention includes the steps of forming and firing an AlN ceramic raw material powder to produce a flat substrate made of an AlN sintered body, forming an electrode on one main surface of the substrate, adjusting the flatness of the other main surface of the substrate to 5 μm or less, forming a heating resistor on the other main surface of the substrate, spraying a first oxide ceramic spray raw material powder on the one main surface of the substrate to form a first oxide ceramic sprayed film, spraying a second oxide ceramic spray raw material powder on the other main surface of the substrate to form a second oxide ceramic sprayed film, producing either a cooling member having a refrigerant flow path therein formed by joining a plurality of metal members, or a cooling member having a refrigerant flow path therein formed by firing a plurality of ceramic molded bodies, and applying an adhesive to at least one of the second oxide ceramic sprayed film or the cooling member to bond an electrode-embedded member and the cooling member. Furthermore, the first oxide ceramic sprayed film has a porosity of 0.1 to 5% and contains one or more oxide ceramics at 99 wt% or more, and the second oxide ceramic sprayed film has a porosity of 1 to 10% and contains one or more oxide ceramics at 99 wt% or more.

By providing a substrate holding member with a cooling member in which a refrigerant flow path is formed in addition to the electrode-embedded member, the sprayed film formed on the surface of the electrode-embedded member on which the heating resistor is provided functions as a thermal resistance layer in addition to providing electrical insulation, so that even if the temperature of the substrate placement surface of the electrode-embedded member is high, the temperature of the surface of the electrode-embedded member facing the cooling member can be kept low, expanding the range of applications in semiconductor manufacturing processes.

The present invention makes it possible to construct an electrode embedding member and a substrate holding member that can improve heat transfer, reduce chemical contamination when used in processes such as plasma etching, and can easily form an insulating layer that is thinner and more uniform than when an insulating layer is formed from a sintered oxide ceramic body.

2 is a cross-sectional view showing an example of an electrode-embedded member according to the first embodiment. FIG. 2 is a cross-sectional view showing an example of a substrate holding member according to the first embodiment. FIG. 4 is a flowchart showing an example of a method for manufacturing an electrode-embedded member according to the first embodiment. FIG. 11 is a cross-sectional view showing an example of an electrode-embedded member according to a second embodiment. 13 is a schematic diagram showing an example of the arrangement of a heating resistor and terminals of an electrode-embedded member according to a second embodiment. FIG. 13 is a schematic diagram showing an example of the arrangement of a heating resistor and terminals of an electrode-embedded member according to a second embodiment. FIG. 13 is a schematic diagram showing an example of the arrangement of a heating resistor and terminals of an electrode-embedded member according to a second embodiment. FIG. 10 is a cross-sectional view showing an example of a substrate holding member according to a second embodiment. FIG.

Next, an embodiment of the present invention will be described with reference to the drawings. To facilitate understanding of the description, the same reference numbers are used for the same components in each drawing, and duplicate descriptions will be omitted. Note that in the configuration diagrams, the size of each component is shown conceptually and does not necessarily represent the actual dimensional ratio.

[First embodiment]
[Configuration of electrode-embedded member]
1 is a cross-sectional view showing an example of an electrode-embedded member according to a first embodiment of the present invention. The electrode-embedded member 100 of this embodiment includes a substrate 110, an electrode 120, a heating resistor 130, a first oxide ceramic sprayed film 140, and a second oxide ceramic sprayed film 150.

The thickness of the electrode embedding member 100 is preferably 1 mm or more and 8 mm or less in a direction perpendicular to one of the main surfaces 112 of the substrate 110 described below. In this way, by reducing the overall thickness of the electrode embedding member 100, high thermal conductivity and better heat transfer are achieved. The thickness of the electrode embedding member is the average value of thicknesses measured at multiple points on the substrate mounting surface.

The substrate 110 is made of an AlN sintered body and is formed into a flat plate shape. The substrate 110 has one main surface 112 and the other main surface 114 facing the one main surface 112. The substrate 110 can have various shapes, such as a disk shape, a polygonal shape, or an elliptical shape.

The substrate 110 being made of an AlN sintered body means that the ceramic sintered body forming the substrate 110 is made of a ceramic sintered body whose main component is AlN. The main component means that the weight ratio of the main component to the weight of the ceramic sintered body is 90 wt % or more. In addition to the main component ceramic, the substrate 110 may contain additives for various purposes such as increasing thermal conductivity. For example, additives made of oxides of Group 2a elements or Group 3a elements or transition metal oxides may be added to adjust the thermal conductivity or volume resistivity.

In general, it is known that the thermal conductivity of ceramics mainly composed of AlN increases when the amount of additives such as _Y2O3 is increased, but adding more than a certain amount _of additives causes a decrease in thermal conductivity. Therefore, it is desirable to set the content of additives consisting of oxides of 2a group elements and 3a group elements and transition metal oxides to 10 wt% or less. Examples of additives of 2a group elements include Mg, Ca, Sr, Ba, etc., and examples of additives of 3a group elements include Y, La, Sm, Ce, etc. Examples of additives of transition metals include Ti, Cr, Mn, Ni, etc.

Ceramic sintered bodies mainly composed of AlN have high thermal conductivity and excellent heat resistance and plasma resistance. Therefore, by forming the base material 110 from a ceramic sintered body mainly composed of AlN, it is possible to obtain a base material 110 with high thermal conductivity and excellent heat resistance and plasma resistance. As a result, the base material 110 has good heat conduction and a uniform temperature distribution.

The thickness of the substrate 110 is preferably 0.5 mm or more and 7.9 mm or less. This allows for good heat transmission between the one main surface 112 and the other main surface 114, and allows for sufficient insulation between the electrode 120 and the heating resistor 130. If the thickness of the substrate 110 is less than 0.5 mm, the insulation between the electrode 120 and the heating resistor 130 may be insufficient. In addition, the strength of the substrate 110 may be insufficient, increasing the risk of breakage. If the thickness of the substrate 110 is greater than 7.9 mm, there is a high risk of impeding the transmission of heat, which may affect the semiconductor manufacturing process. The thickness of the substrate 110 is calculated by subtracting the thickness of the first oxide ceramic sprayed film 140 and the second oxide ceramic sprayed film 150 from the thickness of the electrode-embedded member 100. The method for calculating the thickness of the sprayed film will be described later.

As described above, the thickness of the electrode-embedded member 100 is preferably 1 mm or more and 8 mm or less in the direction perpendicular to one of the main surfaces 112. Therefore, the thickness of the substrate 110 may be determined taking into account the thickness of the electrode-embedded member 100 and the thicknesses of the first and second oxide ceramic sprayed films 140, 150.

The flatness of one of the main surfaces 112 of the substrate 110 is preferably 10 μm or less, and more preferably 5 μm or less. In this way, the flatness of the plane on which the electrode 120 is provided is high, so that the electrode 120 is formed more uniformly. As a result, when the electrode 120 is used, for example, as an electrostatic adsorption electrode, the adsorption force within the substrate mounting surface can be made uniform. The flatness of the substrate 110 after the sprayed film is provided can be measured with a three-dimensional measuring device.

The flatness of the other main surface 114 of the substrate 110 is preferably 5 μm or less, and more preferably 3 μm or less. The flatness of the other main surface 114 of the substrate 110 is preferably 10% or less of the thickness of the heating resistor 130, and more preferably 5% or less. In this way, since the flatness of the plane on which the heating resistor 130 is provided is high, the heating resistor 130 is formed more uniformly, and the variation in the resistance value of the heating resistor 130 can be suppressed. This allows for an even heat distribution. Furthermore, even if the heating resistor 130 is trimmed, the trimming can be performed with high precision, and the effect can be fully exerted.

The electrode 120 is provided on one of the main surfaces 112 of the substrate 110. The electrode 120 is made of Mo, W, Cu, or the like. The electrode 120 is used as an electrostatic adsorption electrode or a high-frequency electrode. The thickness of the electrode 120 in the stacking direction (perpendicular to the one of the main surfaces 112) is preferably 5 μm or more and 100 μm or less.

The heating resistor 130 is provided on the other main surface 114 of the substrate 110. The heating resistor 130 is made of Mo, W, Cu, or the like. The heating resistor 130 is used as a heater for heating the substrate. The thickness of the heating resistor 130 in the stacking direction is preferably 5 μm or more and 100 μm or less.

The first oxide ceramic sprayed film 140 is made of oxide ceramics and covers one of the main surfaces 112 of the substrate 110 on which the electrode 120 is formed. This insulates the electrode 120. The top surface of the first oxide ceramic sprayed film 140 becomes the substrate mounting surface 142. Any oxide ceramics may be used as the raw material depending on the purpose. The first oxide ceramic sprayed film 140 is preferably made of one or a combination of two or more of alumina, yttria, zirconia, titania, chromia, and yttrium aluminum garnet. This makes it applicable to various applications. The combination of two or more means that the sprayed film is formed of a mixture of particles made of different raw materials. The purity of the raw material of the first oxide ceramic sprayed film 140 is preferably 99 wt% or more.

Unlike oxide ceramic sintered bodies, oxide ceramic sprayed films do not contain sintering aids, etc., and therefore can use raw materials with higher purity than oxide ceramic sintered bodies, which reduces chemical contamination when used in processes such as plasma etching. In addition, because oxide ceramic sprayed films can be formed at relatively low temperatures, the risk of thermal deformation of the substrate during formation of the oxide ceramic sprayed film can be reduced, and the uniformity of the temperature distribution of the substrate can be maintained. Thermal deformation of the substrate can lead to deterioration of the uniformity of the temperature distribution. In addition, it is easier to form an insulating layer that is thinner and more uniform than when an insulating layer is formed using oxide ceramic sintered bodies.

It is preferable that the first oxide ceramic sprayed film 140 has a small porosity. This can reduce chemical contamination when used in processes such as plasma etching, and can improve heat transfer. The porosity is preferably, for example, 0.1% or more and 5% or less.

The first oxide ceramic sprayed film 140 preferably has a thickness of 50 μm or more and 2000 μm or less from one main surface 112 of the substrate 110. This provides sufficient insulation while keeping the overall thickness of the electrode-embedded member 100 thin. The thickness of the sprayed film can be measured with an eddy current film thickness gauge (eddy current) or an ultrasonic flaw detector. It may also be measured by observing the cut surface (optical microscope, magnifying glass). The thickness of the sprayed film is the average value of values measured at multiple points on the substrate mounting surface.

The second oxide ceramic sprayed film 150 is made of oxide ceramics and covers the other main surface 114 of the substrate 110 on which the heating resistor 130 is formed. This insulates the heating resistor 130. Any oxide ceramics may be used as the raw material depending on the purpose. The second oxide ceramic sprayed film 150 is preferably made of one or a combination of two or more of alumina, yttria, zirconia, titania, chromia, and yttrium aluminum garnet, for example. This makes it applicable to various applications. The second oxide ceramic sprayed film 150 is preferably made of raw materials with a purity of 99 wt% or more. The second oxide ceramic sprayed film 150 may be a sprayed film using the same type of raw material as the first oxide ceramic sprayed film 140, or may be a sprayed film using a different type of raw material.

The second oxide ceramic sprayed film 150 preferably has a predetermined porosity. This allows it to function as a thermal resistance layer. The porosity is preferably 1% or more, and more preferably 3% or more. There is no particular need to limit the upper limit of the porosity, but it can be, for example, 10% or less.

The second oxide ceramic sprayed film 150 preferably has a thickness of 50 μm or more and 2000 μm or less from the other main surface 114 of the substrate 110. This provides sufficient insulation while keeping the overall thickness of the electrode-embedded member 100 thin.

The electrode-embedded member 100 also includes the necessary terminals 160 and terminal holes 162. This allows power to be supplied to the electrode 120 and the heating resistor 130. The number of terminals 160 and terminal holes 162 can vary depending on the design of the electrode-embedded member 100.

The electrode-embedded member of the present invention allows good heat conduction, reduces chemical contamination when used in processes such as plasma etching, and can easily form an insulating layer that is thinner and more uniform than when an insulating layer is formed using a sintered oxide ceramic body.

[Configuration of the substrate holding member]
2 is a cross-sectional view showing an example of a substrate holding member according to the first embodiment of the present invention. The substrate holding member 200 of the present invention includes an electrode embedding member 100 and a cooling member 210.

The cooling member 210 is joined to the second oxide ceramic sprayed film 150 of the electrode-embedded member 100 by an adhesive layer 220. The cooling member 210 has a coolant flow path 212 inside. The cooling member 210 is preferably made of a metal. An Al alloy is most suitable because of its workability and high thermal conductivity, but alloys containing copper, titanium, and nickel, SUS, etc. may also be used. The cooling member may also be made of SiC or AlN, which have high thermal conductivity. If these ceramics are used, the physical property difference with the electrode-embedded member is close, so the residual stress when integrated is small, and the risk of peeling and breakage can be further reduced. Water, ethylene glycol, freon, etc. can be used as the coolant, and the coolant temperature can be used below the boiling point.

The adhesive layer 220 bonds the second oxide ceramic sprayed film 150 and the cooling member 210. This allows the electrode-embedded member 100 and the cooling member 210 to be bonded. The adhesive layer 220 is preferably formed of a silicone adhesive containing silicone as a main component, such as silicone resin or modified silicone resin. The silicone adhesive has a sufficiently small Young's modulus compared to ceramics and metals, so it can maintain flexibility. The curing type of the silicone adhesive can be selected from dehydration, dealcoholization, and addition polymerization types. In addition, one-component curing, two-component curing, and ultraviolet curing can be selected. The adhesive layer 220 may contain ceramics such as Al ₂ O ₃ and AlN, or a metal filler such as Cu, in order to adjust thermal conductivity. The thickness of the adhesive layer 220 is preferably 0.1 mm or more and 4.0 mm or less.

The substrate holding member of the present invention can be used in semiconductor processes while the electrode-embedded member is cooled by the cooling member, which further enhances the effect of good heat transfer through the electrode-embedded member and makes it applicable to semiconductor processes at higher temperatures than ever before.

[Method of manufacturing electrode-embedded member]
Next, a method for manufacturing an electrode-embedded member according to the present embodiment will be described. Fig. 3 is a flow chart showing an example of a method for manufacturing an electrode-embedded member according to the first embodiment of the present invention. As shown in Fig. 3, the method for manufacturing an electrode-embedded member according to the first embodiment of the present invention includes a base material preparation step (step S1), an electrode formation step (step S2), and a thermal spray film formation step (step S3).

(Substrate preparation process)
First, a substrate is prepared. The substrate is formed into a flat plate shape using an AlN sintered body. The substrate may be prepared by any method, and the manufacturing method is appropriately selected. For example, a hot press method or HIP can be used.

For example, when using the hot press method, a mixed powder of AlN raw material powder and sintering aid powder is molded to produce a molded body, which is then fired to produce an AlN sintered body. At this time, for example, the firing temperature is adjusted to be within the temperature range of 1650 to 1950°C. The firing time (the time the firing temperature is held) is adjusted to be within the time range of 2 to 10 hours. The pressing pressure during firing is adjusted to be within the pressure range of 1 to 15 MPa. Note that these firing temperatures and firing times can be changed depending on the type and amount of sintering aid powder, etc.

A step of adjusting the thickness may be provided by polishing or grinding one or the other main surface of the fired substrate. When adjusting the thickness, it is preferable to adjust it to 0.5 mm or more and 7.9 mm or less. Also, a step of adjusting the flatness of one or the other main surface may be provided by polishing or grinding one or the other main surface of the substrate. When adjusting the flatness, it is preferable to adjust one of the main surfaces to 10 μm or less, and more preferably to 5 μm or less. Also, it is preferable to adjust the other main surface to 5 μm or less, and more preferably to 3 μm or less. The flatness of the substrate can be measured by a three-dimensional measuring device or a laser interferometer.

(Electrode formation process)
Next, an electrode is formed on one main surface of the substrate, and a heating resistor is formed on the other main surface. The method for forming the electrode or heating resistor may be any method as long as it can be performed at a temperature that does not cause thermal deformation of the substrate. As an example, a method for forming an electrode on an AlN sintered substrate by cold spraying will be described.

The cold spray method is a technology that forms a film by colliding powder material with a substrate in a solid phase below the melting temperature, and the film formed by the cold spray method is dense and does not oxidize in the atmosphere. In addition, the material particles are less affected by heat, and thermal deterioration is suppressed. Furthermore, the film formation speed is fast, thick films are possible, and electrodes can be formed in a process with relatively small thermal effects compared to conventional thermal spraying methods.

(particle velocity)
The particles cannot adhere to the substrate unless they exceed a critical velocity, which is the speed at which the material particles begin to adhere. Therefore, a carrier gas is introduced to increase the particle velocity. A particle diameter of 5 μm or more is preferable because it makes handling easier.

(Carrier gas)
In the cold spray method, nitrogen and helium are generally used mainly due to cost and other considerations. It is also possible to obtain a high-speed gas flow at reduced costs by mixing helium with nitrogen in any ratio. It is also possible to prevent the oxidation of metals by mixing a small amount of hydrogen.

The process for forming the electrodes or heating resistors on the AlN sintered body substrate is not limited to the above, and post-metallization methods such as thermal spraying, CVD, PVD, and DBC can be applied. For example, in the DBC method, copper and the AlN sintered body are directly bonded. The advantages of the DBC method are the thick copper metallization and the high bonding strength between copper and ceramic. The DBC method can form thin copper electrodes directly bonded on the AlN sintered body. However, metallization requires heat treatment at high temperatures of 1000°C or more. In that case, the AlN sintered body substrate may be significantly deformed due to a certain thermal effect in the electrode formation process. Therefore, it becomes difficult to perform correction processing (trimming, etc.) due to the variation in the resistance value of the formed heating resistor. Therefore, it is preferable to reduce the flatness of the other main surface of the AlN sintered body substrate before forming the electrode.

(Formation of electrodes)
To form a predetermined electrode pattern (including a heating resistor) on an AlN sintered body, there are two methods to choose from: a method of patterning the electrode material with a hard mask when forming it on the surface of the AlN sintered body, and a method of forming the electrode material all over the surface of the AlN sintered body, masking it, and then patterning it by sandblasting or the like. The former is selected for the cold spray method, thermal spray method, and PVD method. The latter is selected for the cold spray method, thermal spray method, CVD method, and DBC method. An electrode is formed on one main surface of the substrate by these methods.

(Adjustment of heating resistor (trimming, etc.))
The heating resistor (heater electrode) directly affects the temperature distribution of the product when it is used. Therefore, the heating resistor may be processed to adjust the resistance after measuring the electrical resistance between each predetermined position after pattern formation and measuring the variation. Mainly, the variation in the surface on which the heating resistor is arranged can be reduced by making the resistance value high by making the thickness of the pattern thin. The pattern width and pattern shape can also be adjusted by similar processing. This processing is performed by machine processing or manual processing, but if the flatness of the other main surface of the AlN sintered body is large, adjustment may be hindered. Therefore, the flatness of the other main surface is preferably adjusted to 5 μm or less, and more preferably adjusted to 3 μm or less. In addition, in terms of the relationship with the heating resistor, the flatness of the other main surface is preferably 10% or less of the thickness of the heating resistor before trimming, and more preferably 5% or less.

(Thermal spray coating process)
Next, a first oxide ceramic spray raw material powder is sprayed onto one main surface of the substrate on which the electrodes are formed to form a first oxide ceramic spray film, and a second oxide ceramic spray raw material powder is sprayed onto the other main surface of the substrate on which the heating resistor is formed to form a second oxide ceramic spray film. The method for forming the spray film may be either a dry or wet spray method, or a cold spray method using an aerosol. Here, a method using a wet spray method will be described as an example.

First, prepare an oxide ceramic raw material powder whose average particle diameter D50 falls within a predetermined range. Then, prepare a slurry by mixing the oxide ceramic raw material powder with water. The average particle diameter D50 of the oxide ceramic raw material powder is preferably 0.5 μm or more and 6 μm or less. If D50 is smaller than 0.5 μm, the viscosity of the slurry increases, making thermal spraying difficult and deteriorating the film quality. If D50 is larger than 6 μm, the slurry cannot be transported stably and the film quality deteriorates. The average particle diameter D50 can be measured using a laser diffraction/scattering type particle size distribution measuring device in dry or wet measurement. It is preferable that the particle size distribution of the ceramic raw material powder is sharp.

The first oxide ceramic raw material powder and the second oxide ceramic raw material powder can be various materials depending on the purpose of the first oxide ceramic sprayed film and the second oxide ceramic sprayed film. The first oxide ceramic raw material powder and the second oxide ceramic raw material powder are preferably, for example, alumina (Al ₂ O ₃ ), yttria (Y ₂ O ₃ ), zirconia (ZrO ₂ ), titania (TiO ₂ ), chromia (Cr ₂ O ₃ ), yttrium aluminum garnet (Y ₃ Al ₅ O ₁₂ , also written as YAG) powder or any mixed powder thereof. These materials are used for various purposes such as protecting the substrate and improving its function. The first oxide ceramic raw material powder and the second oxide ceramic raw material powder may be the same type or different types.

The concentration of the slurry is preferably 10 wt% or more and 40 wt% or less, and more preferably 20 wt% or more and 40 wt% or less. If the concentration of the slurry is less than 10 wt%, application takes a long time and productivity decreases, making it unsuitable for industrial use. If the concentration is more than 40 wt%, the viscosity increases and the slurry cannot be transported stably.

The prepared slurry is then plasma sprayed onto the substrate's surface (one main surface and the other main surface) to coat it. The gas used for spraying is preferably a non-oxidizing gas. As the non-oxidizing gas, for example, Ar gas, _H2 gas, _N2 gas, or a mixed gas of any combination of these gases can be used. The above slurry is supplied to a nozzle via a tube pump and plasma sprayed using the gas.

Prior to the plasma spraying process, a process may be performed in which the surface of the substrate to be sprayed is irradiated with plasma using only gas without adding slurry. By performing such a process, the surface of the substrate to be sprayed is preheated, and the oxide ceramic raw material powder melted during plasma spraying is more likely to penetrate into voids in the substrate surface, electrodes, etc. In addition, since the preheating temperature is not so high that it will thermally deform the substrate, there is no problem with performing the preheating process.

As a result, as shown in FIG. 1, a first oxide ceramic sprayed film 140 and a second oxide ceramic sprayed film 150 are formed from the slurry, covering one main surface 112 and the other main surface 114 of the substrate 110. The thicknesses of the first oxide ceramic sprayed film 140 and the second oxide ceramic sprayed film 150 are preferably adjusted to 50 to 2000 μm, and more preferably adjusted to 50 to 500 μm. If the thickness of the sprayed film is less than 50 μm, there is an increased risk of the functions of the sprayed film, such as insulation, plasma resistance, wear resistance, and heat insulation, decreasing. Also, if the thickness of the sprayed film exceeds 2000 μm, the internal stress of the sprayed film increases, increasing the risk of a decrease in adhesion or peeling.

The porosity of the first oxide ceramic sprayed film 140 is preferably adjusted to 0.1 to 5%. The porosity of the second oxide ceramic sprayed film 150 is preferably adjusted to 1 to 10%.

(Terminal formation)
After the sprayed film formation process, necessary terminals are connected. The terminals connect an external power source to the electrodes of the electrostatic chuck, and are provided by brazing, welding, soldering, conductive bonding, or other methods using heat-resistant metals such as Ni, Kovar, or Ti.

This manufacturing method allows the production of an electrode-embedded component in which electrodes or heating resistors are formed on both main surfaces of a substrate made of sintered AlN and an oxide ceramic sprayed film is formed.

[Method of manufacturing the substrate holding member]
Next, a method for manufacturing the substrate holding member according to this embodiment will be described.

(Method of manufacturing cooling member)
When the cooling member is made of metal, a plurality of metal members are prepared, and a groove portion that serves as a flow path for the refrigerant is formed. Next, the plurality of metal members with the groove portion formed therein are joined to prepare a cooling member having a flow path. The joining can be performed by performing a predetermined machining process on the plurality of metal members, and then using a conventional metal joining method such as brazing, electron beam welding, or diffusion bonding. The metal is most suitable for use in terms of workability and high thermal conductivity, but alloys containing copper, titanium, and nickel, SUS, etc. can also be used. The size and shape of the flow path for the refrigerant may be any size and shape that can uniformly cool the ceramic member. The cooling member may have a through hole for passing a terminal through. In addition, in order to reduce the number of through holes, the cooling member may have a through hole for passing a plurality of terminals together.

When making the cooling member from ceramics such as SiC or AlN, multiple molded bodies are prepared, and grooves that serve as refrigerant flow paths are formed in either the molded bodies, the degreased bodies obtained by degreasing the molded bodies, or the sintered bodies obtained by sintering the molded bodies. If a calcination process is performed after the degreasing process, the grooves may be formed in the calcined bodies. Forming the grooves in a later process is more difficult, but the dimensional accuracy of the grooves is higher. The cooling member can then be made by joining these together. If the grooves are formed before sintering, they can be joined by uniaxial pressure welding sintering or normal pressure sintering. If the grooves are formed in the sintered body after sintering, the joining can be performed by interposing a bonding agent at the bonding interface, or by diffusion bonding under uniaxial pressure perpendicular to the bonding surface at high temperatures without using a bonding agent.

(Joining of electrode-embedded member and cooling member)
The electrode-embedded member is preferably integrated with the cooling member by a silicone adhesive. The cooling member is preferably made of an Al alloy. The cooling member has a refrigerant flow path inside, and can absorb the heat transferred from the electrode-embedded member. The silicone adhesive preferably has a thermal conductivity of 0.1 to 2 W/mK, more preferably 0.1 to 1.0 W/mK. The adhesive layer preferably has a thickness of 0.1 mm to 4 mm, more preferably 0.5 mm to 2 mm. Any curing type may be used, but an addition polymerization heat curing type is preferable, and it is preferable to cure by heating at 100°C or higher.

In addition, in order to provide a thermal resistance layer, another type of sprayed film may be formed on the oxide ceramic sprayed film provided on the electrode- _embedded member. Also, a sprayed film made of _Al2O3 or _ZrO2 may be formed on the adhesive layer side surface of the cooling member. Silicone bonding can be integrated by applying an adhesive and then heating and curing it. When the adhesive layer is formed of silicone resin, it is possible to reduce stress induced by the difference in physical properties between AlN and the cooling member, and to prevent defects such as peeling and cracks in the adhesive layer.

This manufacturing method makes it possible to produce a substrate holding member in which the second oxide ceramic sprayed film of the electrode embedding member and the cooling member are bonded and integrated.

Second Embodiment
[Configuration of electrode-embedded member]
4 is a cross-sectional view showing an example of an electrode-embedded member according to a second embodiment of the present invention. The electrode-embedded member 100 of this embodiment includes a substrate 110, an electrode 120, a heating resistor 130, a first oxide ceramic sprayed film 140, and a second oxide ceramic sprayed film 150. That is, the basic configuration of the electrode-embedded member according to this embodiment is the same as that of the electrode-embedded member according to the first embodiment. Therefore, only the differences will be described below.

The heating resistor 130 has a plurality of partial heating resistors 132 to which different voltages can be applied. In this way, by arranging a plurality of partial heating resistors to which different voltages can be applied in the same plane (so-called multi-zone), the amount of heat generated can be adjusted for each partial heating resistor by adjusting the output of each of the plurality of electrodes (terminals), and the temperature distribution of the electrode-embedded member can be adjusted.

When forming a multi-zone structure, if the flatness of the other main surface 114 on which the partial heating resistors 132 are arranged is low, it becomes difficult to form each partial heating resistor 132 with sufficient precision so that it exhibits the resistance value as designed. In particular, when the number of partial heating resistors 132 increases, low flatness significantly affects the deviation of the resistance value of the partial heating resistors 132 from the design value. Furthermore, if the flatness is low, trimming also becomes difficult. Therefore, the flatness of the other main surface 114 is preferably 5 μm or less, and more preferably 3 μm or less. This makes it possible to reduce the deviation of the resistance value of the partial heating resistors 132 from the design value.

を満たすことが好ましい。 Furthermore, the number N of terminals 160 connected to the plurality of partial heating resistors 132 is expressed by the following formula using a ceiling function for the number n of the plurality of partial heating resistors 132:

It is preferable that the following is satisfied.

In the case of a multi-zone configuration, many partial heating resistors are arranged on one plane, and corresponding terminals are required. However, if the number of terminals becomes too large, the positions of the terminals become cold spots, causing temperature unevenness. In particular, when the electrode embedding material is thin, the effect of cold spots has a significant impact on the temperature distribution on the substrate mounting surface. However, by devising a connection pattern for the heating resistors, it is possible to reduce the number of terminals sufficiently to satisfy the above formula even when many partial heating resistors are arranged, and to achieve a uniform temperature distribution on the substrate. Note that the ceiling function is a function that rounds up the decimal point when the number is expressed as a decimal.

Figures 5 to 7 are schematic diagrams showing examples of connections between multiple partial heating resistors 132 and terminals 160 of the electrode-embedded member 100 according to this embodiment. Note that Figures 5 to 7 only show the connections between the partial heating resistors 132 and terminals 160, and do not show the shape of the partial heating resistors 132 or the specific positions of the terminals 160.

Figure 5 shows an example in which there are 12 partial heating resistors 132 and 13 terminals 160. As shown in Figure 5, by connecting one terminal of a partial heating resistor so that it is shared with one terminal of another partial heating resistor, the number of terminals N for the number n of partial heating resistors can be reduced to n+1. Note that since it is sufficient to reduce the number of terminals in the entire electrode-embedded member, in an actual electrode-embedded member, there may be partial heating resistors that do not share terminals with other partial heating resistors.

Figure 6 shows an example in which the number of partial heating resistors 132 is 24 and the number of terminals 160 is 13. By using Y-shaped connections extensively as in Figure 6, the number of terminals N for the number n of partial heating resistors can be reduced to n/2+1, which is smaller than n+1.

Figure 7 shows an example in which there are 24 partial heating resistors 132 and 10 terminals 160. As shown in Figure 7, by surrounding the outer periphery with three partial heating resistors and providing a partial heating resistor between each terminal provided inside and the surrounding terminal, the number N of terminals relative to the number n of partial heating resistors can be reduced to a number equal to the left side of the above (Equation 1).

In addition, as the number of terminals is reduced, it becomes more difficult to control each partial heating resistor, so in actual electrode-embedded components, it is necessary to consider how easy it is to control the partial heating resistors.

[Configuration of the substrate holding member]
8 is a cross-sectional view showing an example of a substrate holding member according to a second embodiment of the present invention. A substrate holding member 200 according to this embodiment includes an electrode-embedded member 100 and a cooling member 210. That is, the basic configuration of the substrate holding member according to this embodiment is the same as that of the substrate holding member according to the first embodiment. Therefore, only the differences will be described below.

The cooling member 210 may have through holes aligned with the positions of the terminals 160, but this would complicate the structure, so if a through hole is provided, it is preferable to have a through hole through which several terminals can pass together. Also, the cooling member 210 may have a refrigerant flow path 212 separated into several different paths. This allows only some of the multiple partial heating resistors 132 to be cooled.

[Examples and Comparative Examples]
Example 1
(Base material formation process)
_A sintering aid, _Y2O3 and an organic binder, were added to AlN raw material powder with a purity of 98% and an average particle size of 0.5 μm, and the powder was subjected to isostatic pressing at 1 ton/ ^cm2 by a CIP (cold isostatic pressing) molding method to produce a molded body. Next, the molded body was sintered at normal pressure at 2000°C for 3 hours in an _N2 atmosphere to produce an AlN sintered body with a diameter of Φ300 mm and a thickness of 7.25 mmt. Next, one main surface and the other main surface of the AlN sintered body substrate were polished to adjust the flatness to 10 μm and the surface roughness to Ra 0.64 μm. In this way, the AlN sintered body substrate of Example 1 was prepared.

(Electrode formation process)
The powder material was Mo, and the electrodes and the heating resistor were formed by cold spraying. The thickness of each was 30 μm.

(Plasma irradiation process)
Next, a non-oxidizing gas plasma was irradiated or sprayed onto the substrate surface to be sprayed using a high-speed plasma spray machine, and the surface to be sprayed was preheated. A mixture of Ar gas, _N2 gas, and _H2 gas was used as the non-oxidizing gas. The supply rate of Ar gas to the nozzle constituting the spray machine was controlled to 100 l/min, the supply rate of _N2 gas was controlled to 70 l/min, and the supply rate of _H2 gas was controlled to 70 l/min.

The current applied to the nozzle constituting the high-speed plasma spraying machine was controlled to 250 A, and the power supplied to the nozzle was adjusted to 65 kW. The distance between the tip of the nozzle and the surface of the substrate to be sprayed was adjusted to 75 mm. The scanning speed or displacement speed of the nozzle relative to the substrate was adjusted to 850 mm/s. This generated plasma of a mixed gas of Ar gas, _N2 gas, and _H2 gas, and the plasma was irradiated or sprayed from the tip of the nozzle to the surface of the substrate to be sprayed. The surface to be sprayed was preheated by irradiating or spraying the plasma for 3 minutes.

(Plasma spraying process)
Then, the high-speed plasma spraying machine was used as it was to plasma spray the Al ₂ O ₃ slurry onto the substrate surface to be sprayed using a non-oxidizing gas. The slurry was prepared by mixing 300 g of 99.9% pure Al _{2 O 3} raw material powder with an average particle diameter _D50 of 0.5 μm with 700 g of water. As the non-oxidizing gas, a mixed gas of Ar gas, N ₂ gas and H ₂ gas was used. The supply amount of Ar gas to the nozzle constituting the spraying machine was controlled to 100 l/min, the supply amount of N ₂ gas was controlled to 70 l/min, and the supply amount of H ₂ gas was controlled to 70 l/min. As a result, the spraying speed was controlled to 600 to 700 mm/s.

The current applied to the nozzle constituting the high-speed plasma spraying machine was controlled to 250 A, and the power supplied to the nozzle was adjusted to 65 kW. The distance between the tip of the nozzle and the surface of the substrate to be sprayed was adjusted to 75 mm. The scanning speed or displacement speed of the nozzle relative to the substrate was adjusted to 850 mm/s. As a result, a plasma of a mixed gas of Ar gas, _N2 gas, and _H2 gas was generated, and the raw material powder melted by the plasma was sprayed from the tip of the nozzle to the surface of the substrate to be sprayed. The first oxide ceramic sprayed film formed by spraying on one main surface was formed to a thickness of 250 μm. The second oxide ceramic sprayed film formed by spraying on the other main surface was formed to a thickness of 500 μm. Then, one or both of the sprayed films formed on the substrate were processed to adjust the thickness as necessary so that the thickness over the entire surface of the electrode-embedded member was 8 mm. In this manner, an electrode-embedded member of Example 1 was produced in which both main surfaces of the AlN sintered body substrate were covered with Al ₂ O ₃ sprayed films.

Example 2
In Example 2, the thickness of the substrate was 4 mm, and the flatness of both main surfaces of the substrate was 5 μm. In addition, trimming was performed after the heating resistor was formed. The electrode-embedded member of Example 2 was produced under the same conditions as Example 1.

Example 3
In Example 3, the thickness of the substrate was 0.75 mm, and the flatness of both main surfaces of the substrate was 5 μm. The thicknesses of the first oxide ceramic sprayed film and the second oxide ceramic sprayed film were 125 μm and 125 μm, respectively, and trimming was performed after the heating resistor was formed. The electrode-embedded member of Example 3 was produced under the same conditions as Example 1 except for the above.

Example 4
In Example 4, the thickness of the substrate was 4 mm, and the flatness of both main surfaces of the substrate was 5 μm. In addition, trimming was performed after the heating resistor was formed. In addition, an Al ₂ O ₃ -5 wt % TiO ₂ ceramic sprayed film was sprayed to a thickness of 250 μm on one of the main surfaces. The electrode-embedded member of Example 4 was produced under the same conditions as Example 1 except for the above.

(Example 5)
In Example 5, the thickness of the substrate was 4 mm, and the flatness of both main surfaces of the substrate was 5 μm. In addition, trimming was performed after the heating resistor was formed. In addition, _{a ZrO2} ceramic sprayed film was sprayed to a thickness of 500 μm on the other main surface. The electrode-embedded member of Example 5 was produced under the same conditions as Example 1.

Example 6
In Example 6, the thickness of the substrate was 4 mm, and the flatness of both main surfaces of the substrate was 5 μm. The arrangement pattern of the heating resistors was as shown in FIG. 6, with 12 partial heating resistors and 7 terminals. The electrode-embedded member of Example 6 was produced under the same conditions as Example 1.

(Example 7)
In Example 7, the thickness of the substrate was 4 mm, and the flatness of both main surfaces of the substrate was 5 μm. The arrangement pattern of the heating resistors was as shown in FIG. 7, with 24 partial heating resistors and 13 terminals arranged. The electrode-embedded member of Example 7 was produced under the same conditions as Example 1.

(Example 8)
In Example 8, an electrode-embedded member was produced under the same conditions as in Example 2. A cooling member was also produced, made of Al alloy (A6061), with dimensions of diameter Φ300 mm, thickness 25 mm, and a coolant flow path with a cross-sectional shape of width 10 mm and height 10 mm inside. The material was Al alloy (A6061), and the dimensions of diameter Φ300 mm, thickness 25 mm, and the coolant flow path with a cross-sectional shape of width 10 mm and height 10 mm inside were bonded using a silicone adhesive with a thermal conductivity of 0.9/mK. The thickness of the adhesive layer was 1 mm. In this manner, the substrate holding member of Example 8 was produced.

The electrode-embedded member or substrate-holding member of each example was installed in a chamber and used. In each case, power was supplied to the heating resistor, and the temperature of the substrate mounting surface could be raised to 300°C. The temperature distribution at that time was a maximum-minimum value of 10°C or less within a range of φ290 mm, indicating good heat transfer and uniform temperature distribution on the substrate mounting surface.

It was found that the electrode-embedded member of Example 2 had better heat conduction and temperature distribution on the substrate mounting surface than the electrode-embedded member of Example 1.

The electrode-embedded member of Example 3 was found to have better heat conduction and temperature distribution on the substrate mounting surface than the electrode-embedded member of Example 1. In addition, the substrate and the first and second oxide ceramic sprayed films could be used without problems even if they were made thinner.

It was found that in the electrode-embedded member of Example 4, the first oxide ceramics sprayed film on one main surface side had a volume resistivity of ¹⁰ Ωcm and functioned as an insulating layer for a so-called Johnsen-Rahbek type electrostatic chuck, and the second oxide ceramics sprayed film on the other main surface side functioned as an electrical insulator.

In the electrode-embedded member of Example 5, the second oxide ceramics sprayed film on the other main surface side was a _ZrO2 sprayed film, and it was found that the second oxide ceramics sprayed film functioned as a heat insulating layer, making it an electrode-embedded member with good temperature distribution at high temperatures.

The electrode-embedded members of Examples 6 and 7 were found to have fewer cold spots than electrode-embedded members with the same number of partial heating resistors but a larger number of terminals. This is thought to be a direct result of reducing the number of terminals.

It was found that the substrate holding member of Example 8 can be used in higher temperature processes compared to Examples 1 to 7.

The above results confirm that the electrode-embedding member and substrate-holding member of the present invention have good heat conduction and uniform temperature distribution, and can reduce chemical contamination when used in processes such as plasma etching, and can easily form an insulating layer that is thinner and more uniform than when an insulating layer is formed using a sintered oxide ceramic body.

The present invention is not limited to the above-described embodiment, and it goes without saying that it covers various modifications and equivalents that fall within the spirit and scope of the present invention. Furthermore, the structure, shape, number, position, size, etc. of the components shown in each drawing are for convenience of explanation and may be changed as appropriate.

Reference Signs List 100 Electrode-embedded member 110 Substrate 112 One principal surface 114 Other principal surface 120 Electrode 130 Heating resistor 132 Partial heating resistor 140 First oxide ceramic sprayed film 142 Substrate mounting surface 150 Second oxide ceramic sprayed film 160 Terminal 162 Terminal hole 200 Substrate holding member 210 Cooling member 212 Flow path 220 Adhesive layer

Claims (8)

An electrode embedding member,
A substrate made of an AlN sintered body and formed into a flat plate shape;
An electrode provided on one main surface of the substrate;
a heating resistor provided on the other main surface of the base material;
a first oxide ceramic sprayed film covering the one main surface of the substrate;
a second oxide ceramic sprayed film covering the other main surface of the substrate;
The flatness of the other main surface of the base material is 5 μm or less,
The first oxide ceramic sprayed film has a porosity of 0.1 to 5%, and contains one or more oxide ceramics at 99 wt % or more;
The second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains one or more oxide ceramics at 99 wt % or more . The electrode-embedded member according to claim 1, characterized in that the thickness of the electrode-embedded member in a direction perpendicular to the one of the main surfaces is 1 mm or more and 8 mm or less. 3. The electrode-embedded member according to claim 1, wherein the flatness of the one main surface of the base material is 10 μm or less. The electrode-embedded member according to any one of claims 1 to 3, characterized in that the heating resistor has a plurality of partial heating resistors to each of which a different voltage can be applied. The number N of terminals connected to the plurality of partial heating resistors is expressed by the following formula using a ceiling function for the number n of the plurality of partial heating resistors:

5. The electrode-embedding member according to claim 4, wherein the above satisfies the above. The electrode-embedding member according to any one of claims 1 to 5,
a cooling member provided on the second oxide ceramic sprayed film side of the electrode-embedded member and having a coolant flow path therein. A method for manufacturing an electrode-embedded member, comprising the steps of:
A step of forming and sintering the AlN ceramic raw material powder to prepare a flat base material made of an AlN sintered body;
forming an electrode on one main surface of the substrate;
adjusting the flatness of the other main surface of the base material to 5 μm or less;
forming a heating resistor on the other main surface of the base material;
spraying a first oxide ceramic spray coating material powder onto the one main surface of the substrate to form a first oxide ceramic spray coating;
and spraying a second oxide ceramic spray coating onto the other main surface of the substrate with a second oxide ceramic spray coating material powder ,
The first oxide ceramic sprayed film has a porosity of 0.1 to 5%, and contains one or more oxide ceramics at 99 wt % or more;
A method for manufacturing an electrode-embedded member, characterized in that the second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains one or more oxide ceramics at 99 wt % or more . A method for manufacturing a substrate holding member, comprising the steps of:
A step of forming and sintering the AlN ceramic raw material powder to prepare a flat base material made of an AlN sintered body;
forming an electrode on one main surface of the substrate;
adjusting the flatness of the other main surface of the base material to 5 μm or less;
forming a heating resistor on the other main surface of the base material;
spraying a first oxide ceramic spray coating material powder onto the one main surface of the substrate to form a first oxide ceramic spray coating;
spraying a second oxide ceramic spray coating material powder onto the other main surface of the substrate to form a second oxide ceramic spray coating;
A step of producing either a cooling member having a refrigerant flow path therein formed by joining a plurality of metal members or a cooling member having a refrigerant flow path therein formed by firing a plurality of ceramic molded bodies;
applying an adhesive to at least one of the second oxide ceramic sprayed film or the cooling member, and adhering the electrode-embedded member and the cooling member ;
The first oxide ceramic sprayed film has a porosity of 0.1 to 5%, and contains one or more oxide ceramics at 99 wt % or more;
A method for manufacturing a substrate holding member, characterized in that the second oxide ceramic sprayed film has a porosity of 1 to 10%, and the second oxide ceramic sprayed film contains one or more oxide ceramics at 99 wt % or more .

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