JP7705991B2 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Google Patents

Description

The present invention relates to a substrate processing method and a substrate processing apparatus.

The process of processing a substrate such as a semiconductor wafer to manufacture a product such as a semiconductor device includes a chemical processing process in which the substrate is treated with a chemical solution, a rinsing process in which the chemical solution is removed from the surface of the substrate with a rinsing solution, and a drying process in which the substrate is dried.

However, during the drying process, the pattern formed on the surface of the substrate may collapse. This collapse of the pattern is caused by the surface tension of the rinsing liquid that has penetrated into the pattern.

To avoid the collapse of the pattern, a water-repellent agent is sometimes supplied to the substrate to cover the pattern with a water-repellent protective film. For example, Patent Document 1 discloses a substrate processing method in which a chemical solution process, a pure water rinse process, an alcohol rinse process, a water-repellent process, an alcohol rinse process, a pure water rinse process, and a drying process are sequentially performed on the substrate. The alcohol rinse process after the water-repellent process is a process in which the water-repellent agent remaining on the surface of the substrate is replaced with IPA (isopropyl alcohol) and removed.

JP 2010-114414 A

However, if an alcohol rinse is performed after the water-repellent treatment, the water-repellent agent remaining on the substrate surface may react with the IPA and generate particles. This may result in a decrease in the cleanliness of the substrate.

The present invention has been made in consideration of the above problems, and its purpose is to provide a substrate processing method and substrate processing apparatus that can improve the cleanliness of substrates.

According to one aspect of the present invention, the substrate processing method is a method for processing a substrate. The substrate processing method includes a step of storing diluted isopropyl alcohol (liquid diluted isopropyl alcohol) in a processing tank, and an immersion step of immersing the substrate that has been subjected to a water repellent treatment in the diluted isopropyl alcohol in the processing tank.

In one embodiment, the substrate processing method further includes a step of drying the substrate that has been treated to be water repellent before immersing the substrate in the diluted isopropyl alcohol in the processing tank.

In one embodiment, the immersion step includes, after the step of supplying the organic solvent, lowering the substrate having the water repellent agent remaining on its surface from an upper position above the treatment tank and immersing it in the liquid diluted isopropyl alcohol in the treatment tank.

In one embodiment, the substrate processing method further includes a step of supplying a vaporized water repellent agent into the sealed space that contains the processing tank to perform a water repellent processing on the substrate.

In one embodiment, in the step of supplying the organic solvent, the substrate processing method supplies a vaporized water repellent agent into the sealed space that contains the processing tank to perform the water repellent processing on the substrate.

In one embodiment, the substrate processing method further includes the steps of immersing the substrate in a rinsing liquid stored in the processing tank, lifting the substrate out of the rinsing liquid, and draining the rinsing liquid from the processing tank. The water repellent processing is performed after the rinsing liquid is drained.

In one embodiment, in the step of supplying the organic solvent, a vaporized organic solvent is supplied into the sealed space.

In one embodiment, the water repellent treatment is performed by reducing the pressure inside the sealed space.

In one embodiment, the substrate processing method further includes a step of returning the pressure in the sealed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank.

In one embodiment, the substrate processing method further includes a lifting step of lifting the substrate from the diluted isopropyl alcohol, and a drying step of drying the substrate lifted from the diluted isopropyl alcohol.

In one embodiment, the substrate processing method further includes a step of supplying a vaporized organic solvent into the sealed space that houses the processing tank before the lifting step. The drying step includes a step of supplying an inert gas into the sealed space.

In one embodiment, the drying process is carried out by reducing the pressure inside the sealed space that contains the treatment tank.

In one embodiment, the diluted isopropyl alcohol is supplied to the treatment tank during the immersion process.

In one embodiment, the substrate is vibrated during the immersion process.

In one embodiment, the concentration of isopropyl alcohol in the diluted isopropyl alcohol is 0.3% or more and less than 5%.

According to another aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a processing tank, a chamber, a moving unit, and a control unit. The processing tank stores diluted isopropyl alcohol (liquid diluted isopropyl alcohol), which is diluted isopropyl alcohol. The chamber contains the processing tank. The moving unit moves the substrate within the chamber between a first processing position within the processing tank and a second processing position outside the processing tank. The control unit controls the moving unit to immerse the substrate that has been subjected to a water repellent treatment in the diluted isopropyl alcohol in the processing tank.

In one embodiment, the substrate processing apparatus includes a nozzle that supplies vaporized organic solvent to the substrate that has been treated to be water repellent.

In one embodiment, the control unit controls the movement unit to lower the substrate having residual water repellent on its surface from a position above the treatment tank and immerse it in the liquid diluted isopropyl alcohol in the treatment tank.

The substrate processing method and substrate processing apparatus according to the present invention can improve the cleanliness of the substrate.

1 is a schematic diagram showing an internal configuration of a substrate processing apparatus according to a first embodiment of the present invention; 5 is another schematic diagram showing the internal configuration of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. 1 is a flow diagram showing a substrate processing method according to a first embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to a second embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to a second embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to a third embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to a third embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to a third embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to a third embodiment of the present invention. FIG. 11 is a flow chart showing a substrate processing method according to another embodiment of the present invention.

Below, an embodiment of the substrate processing method and substrate processing apparatus of the present invention will be described with reference to the drawings (Figs. 1 to 16). However, the present invention is not limited to the following embodiment. Note that where explanations overlap, they may be omitted as appropriate. Also, in the drawings, the same or equivalent parts are given the same reference symbols and explanations will not be repeated.

In this specification, for ease of understanding, the X direction, Y direction, and Z direction may be described as being orthogonal to each other. Typically, the X direction and Y direction are parallel to the horizontal direction, and the Z direction is parallel to the vertical direction. However, the definitions of these directions are not intended to limit the orientation during execution of the substrate processing method according to the present invention, or the orientation during use of the substrate processing apparatus according to the present invention.

In this embodiment, the term "substrate" can refer to various types of substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. In the following, this embodiment will be described mainly using as an example a substrate processing method and substrate processing apparatus used to process disc-shaped semiconductor wafers, but the present invention can be similarly applied to the processing of the various types of substrates exemplified above. In addition, various substrate shapes can be used.

[Embodiment 1]
A first embodiment of the present invention will be described below with reference to Figures 1 to 9. First, a substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic diagram showing the internal configuration of the substrate processing apparatus 100 of this embodiment. Figure 2 is another schematic diagram showing the internal configuration of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of this embodiment is of a batch type. Therefore, the substrate processing apparatus 100 processes a plurality of substrates W collectively. Specifically, the substrate processing apparatus 100 processes a plurality of substrates W in units of lots. One lot consists of, for example, 25 substrates W.

As shown in FIG. 1, the substrate processing apparatus 100 includes a processing unit 101. The processing unit 101 dries the substrate W. Specifically, the processing unit 101 includes a chamber 2, a processing tank 3, a gas supply unit 4, a liquid supply unit 5, a holding unit 50, an opening/closing unit 102, and a lifting unit 103. Hereinafter, the processing unit 101 will be referred to as the "drying processing unit 101."

The substrate W has a pattern formation surface on which a pattern is formed. The pattern is formed on the surface of the substrate W by wet etching processing. Specifically, the substrate processing apparatus 100 includes a processing unit that etches the substrate W in addition to the drying processing unit 101. The substrate W etched by this processing unit is transported (carried in) to the drying processing unit 101.

The chamber 2 accommodates a processing tank 3, a gas supply unit 4, and a liquid supply unit 5. The chamber 2 also accommodates a holder 50 when processing the substrate W. The chamber 2 has a cover 2a. The cover 2a is attached to the opening at the top of the chamber 2. The cover 2a can be opened and closed.

The processing tank 3 stores the processing liquid. The processing liquid includes a rinse liquid and diluted IPA (isopropyl alcohol). Therefore, the processing tank 3 stores the rinse liquid and diluted IPA. The diluted IPA refers to diluted IPA. In this embodiment, the rinse liquid is DIW (deionized water). The diluted IPA is IPA diluted with DIW. In other words, the diluted IPA is a mixture of IPA and DIW. Hereinafter, the diluted IPA may be referred to as "dIPA".

The gas supply unit 4 supplies gas into the chamber 2. Specifically, the gas supply unit 4 supplies an inert gas, an organic solvent vapor, and a water repellent agent SMT vapor into the chamber 2. In this embodiment, the organic solvent vapor is IPA vapor.

More specifically, the gas supply unit 4 has a first nozzle 11 to an eighth nozzle 18. The first nozzle 11 to the eighth nozzle 18 are disposed inside the chamber 2 and outside the treatment tank 3. Specifically, the first nozzle 11 to the eighth nozzle 18 are disposed above the treatment tank 3. As described with reference to FIG. 2, the first nozzle 11 to the sixth nozzle 16 eject inert gas. Furthermore, the third nozzle 13 and the fourth nozzle 14 eject IPA vapor. The seventh nozzle 17 and the eighth nozzle 18 eject vapor of the water repellent agent SMT.

The water repellent agent SMT is, for example, a silicon-based water repellent agent or a metal-based water repellent agent. Silicon-based water repellent agents make silicon or compounds containing silicon water repellent (hydrophobic). Metal-based water repellent agents make metals or compounds containing metal water repellent (hydrophobic).

The silicon-based water repellent agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chloro hydrophobizing agent. The non-chloro hydrophobizing agent includes, for example, at least one of dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and an organosilane compound.

Metal-based water repellents include, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

The water repellent agent SMT may be diluted with a solvent that is compatible with the hydrophilic organic solvent. The solvent is, for example, IPA or PGMEA (propylene glycol monomethyl ether acetate).

The liquid supply unit 5 supplies the processing liquid to the processing tank 3. Specifically, the liquid supply unit 5 supplies a rinsing liquid (DIW) and dIPA to the processing tank 3. More specifically, the liquid supply unit 5 has a ninth nozzle 19 and a tenth nozzle 20. The ninth nozzle 19 and the tenth nozzle 20 are disposed in the processing tank 3. As will be described with reference to FIG. 2, the ninth nozzle 19 and the tenth nozzle 20 eject the rinsing liquid (DIW) and dIPA.

The holding unit 50 holds multiple substrates W. Specifically, the holding unit 50 has multiple holding rods 51 and a main body plate 52. In this embodiment, the holding unit 50 has three holding rods 51. The main body plate 52 is a plate-shaped member extending in the vertical direction (Z direction). Each holding rod 51 extends in the horizontal direction (X direction) from one main surface of the main body plate 52. The lower edge of each of the multiple substrates W abuts against multiple (here, three) holding rods 51. The multiple substrates W are held in an upright position (vertical position) while aligned with gaps in the X direction.

The opening/closing unit 102 opens and closes the cover 2a. That is, the opening/closing unit 102 transitions the cover 2a between an open state and a closed state. By opening and closing the cover 2a, the opening at the top of the chamber 2 transitions between a closed state and an open state. The opening/closing unit 102 has a drive source and an opening/closing mechanism, and the opening/closing mechanism is driven by the drive source to open and close the cover 2a. The drive source includes, for example, a motor. The opening/closing mechanism includes, for example, a rack and pinion mechanism.

The lifting unit 103 raises and lowers the holding unit 50. As the lifting unit 103 raises and lowers the holding unit 50, the substrate W held by the holding unit 50 is raised and lowered. The lifting unit 103 has a drive source and a lifting mechanism, and the drive source drives the lifting mechanism to raise and lower the holding unit 50. The drive source includes, for example, a motor. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

In detail, the lifting unit 103 moves (lifts) the holder 50 (substrate W) between the outside and inside of the chamber 2 through an opening at the top of the chamber 2. That is, the lifting unit 103 loads the substrate W into the chamber 2 and loads the substrate W out of the chamber 2.

In addition, the lifting unit 103 moves (lifts and lowers) the holding unit 50 (substrate W) between a first processing position in the processing tank 3 and a second processing position outside the processing tank 3 within the chamber 2. When the holding unit 50 moves to the first processing position, the substrate W moves into the processing tank 3. When the holding unit 50 moves to the second processing position, the substrate W moves out of the processing tank 3. Specifically, the second processing position is a position above the first processing position. When the holding unit 50 moves to the second processing position, the substrate W moves to the space above the processing tank 3. The lifting unit 103 is an example of a moving unit. Note that in FIG. 1, the holding unit 50 and substrate W that have moved to the first processing position are shown by solid lines, and the holding unit 50 and substrate W that have moved to the second processing position are shown by dashed lines.

Next, the substrate processing apparatus 100 will be further described with reference to FIG. 1. As shown in FIG. 1, the substrate processing apparatus 100 further includes a control device 110. The control device 110 controls the operation of each part of the substrate processing apparatus 100. Specifically, the control device 110 includes a control unit 111 and a memory unit 112.

The control unit 111 has a processor. For example, the control unit 111 has a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). Alternatively, the control unit 111 may have a general-purpose computing device.

The memory unit 112 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes specifies the processing content and processing procedure for the substrate W.

The memory unit 112 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 112 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory unit 112 may include removable media. The control unit 111 controls the operation of each part of the substrate processing apparatus 100 based on the computer programs and data stored in the memory unit 112.

The control device 110 (control unit 111) controls the opening/closing unit 102 to transition the cover 2a between the open state and the closed state. In detail, the control device 110 (control unit 111) sets the cover 2a to the open state when the substrate W is loaded into the chamber 2 and when the substrate W is unloaded from the chamber 2. When the cover 2a is in the open state, the upper opening of the chamber 2 is in the open state, and the substrate W can be loaded into the chamber 2 and unloaded from the chamber 2. The control device 110 (control unit 111) sets the cover 2a to the closed state when the substrate W is being processed. When the cover 2a is in the closed state, the upper opening of the chamber 2 is in the closed state. As a result, the inside of the chamber 2 becomes an enclosed space. The substrate W is processed in the enclosed space.

The control device 110 (control unit 111) controls the lifting unit 103 to lift and lower the holding unit 50 (substrate W). In more detail, when the substrate W is loaded into the chamber 2, the control device 110 (control unit 111) moves the holding unit 50 from the outside to the inside of the chamber 2 through an opening at the top of the chamber 2 to load the substrate W into the chamber 2. When the substrate W is unloaded from the chamber 2, the control device 110 (control unit 111) moves the holding unit 50 from the inside to the outside of the chamber 2 through an opening at the top of the chamber 2 to unload the substrate W from the chamber 2. When the substrate W is processed, the control device 110 (control unit 111) moves (lifts and lowers) the holding unit 50 between a first processing position and a second processing position within the chamber 2.

Next, the substrate processing apparatus 100 will be further described with reference to FIG. 2. As shown in FIG. 2, the substrate processing apparatus 100 further includes an inert gas supply source 21, an IPA supply source 22, a water repellent supply source 23, a DIW supply source 24, a pressure reduction section 25, a first pipe 31 to a seventh pipe 37, a drain line 41, an exhaust line 42, a first valve V1 to an eighth valve V8, a first heater H1, and a second heater H2.

The inert gas supply source 21 supplies an inert gas. The inert gas is, for example, nitrogen gas. The IPA supply source 22 supplies IPA. The water repellent supply source 23 supplies a water repellent SMT. The DIW supply source 24 supplies DIW.

The first pipe 31 is supplied with inert gas from the inert gas supply source 21. The first pipe 31 distributes the inert gas supplied from the inert gas supply source 21 to the first nozzle 11 and the second nozzle 12.

The first nozzle 11 and the second nozzle 12 are hollow tubular members. The first nozzle 11 and the second nozzle 12 each have a plurality of discharge holes formed therein. In this embodiment, the first nozzle 11 and the second nozzle 12 extend in the X direction. The plurality of discharge holes of the first nozzle 11 are formed at equal intervals in the X direction. Similarly, the plurality of discharge holes of the second nozzle 12 are formed at equal intervals in the X direction.

When inert gas is supplied to the first nozzle 11 via the first pipe 31, the inert gas is discharged from the multiple discharge holes of the first nozzle 11 into the interior of the chamber 2. Similarly, when inert gas is supplied to the second nozzle 12 via the first pipe 31, the inert gas is discharged from the multiple discharge holes of the second nozzle 12 into the interior of the chamber 2.

The first valve V1 is interposed in the first pipe 31. The first valve V1 is an on-off valve that opens and closes the flow path of the first pipe 31. The first valve V1 controls the flow of the inert gas flowing through the first pipe 31. In detail, when the first valve V1 is opened, the inert gas flows through the first pipe 31 to the first nozzle 11 and the second nozzle 12. As a result, the inert gas is discharged from the first nozzle 11 and the second nozzle 12. When the first valve V1 is closed, the flow of the inert gas is blocked, and the discharge of the inert gas by the first nozzle 11 and the second nozzle 12 stops.

The first valve V1 also functions as an adjustment valve that adjusts the flow rate of the inert gas flowing through the first pipe 31. The first valve V1 is, for example, a solenoid valve. The first valve V1 is controlled by the control device 110 (control unit 111).

The second pipe 32 is supplied with IPA from the IPA supply source 22. The second pipe 32 is provided with a first heater H1. The first heater H1 heats the IPA to vaporize it. In other words, the first heater H1 generates IPA vapor. The second pipe 32 distributes the IPA vapor to the third nozzle 13 and the fourth nozzle 14.

The third nozzle 13 and the fourth nozzle 14 are disposed below the first nozzle 11 and the second nozzle 12. The configuration of the third nozzle 13 and the fourth nozzle 14 is similar to that of the first nozzle 11 and the second nozzle 12. The third nozzle 13 and the fourth nozzle 14, like the first nozzle 11 and the second nozzle 12, eject IPA vapor into the interior of the chamber 2.

The second valve V2 is interposed in the second pipe 32. The second valve V2 is an on-off valve that opens and closes the flow path of the second pipe 32. The second valve V2 is provided downstream of the first heater H1 with respect to the second pipe 32. The second valve V2 controls the flow of IPA steam flowing through the second pipe 32, similar to the first valve V1. The second valve V2 also functions as an adjustment valve that adjusts the flow rate of IPA steam flowing through the second pipe 32. The second valve V2 is, for example, a solenoid valve. The second valve V2 is controlled by the control device 110 (control unit 111).

The third pipe 33 is supplied with inert gas from the inert gas supply source 21. The third pipe 33 is connected to the second pipe 32. In other words, the third pipe 33 allows the inert gas to flow to the second pipe 32.

A third valve V3 is provided in the third pipe 33. The third valve V3 is an on-off valve that opens and closes the flow path of the third pipe 33. Like the first valve V1, the third valve V3 controls the flow of the inert gas flowing through the third pipe 33. The third valve V3 also functions as an adjustment valve that adjusts the flow rate of the inert gas flowing through the third pipe 33. The third valve V3 is, for example, a solenoid valve. The third valve V3 is controlled by the control device 110 (control unit 111).

When discharging IPA vapor from the third nozzle 13 and the fourth nozzle 14, the control device 110 (control unit 111) opens the second valve V2 and closes the third valve V3. On the other hand, when discharging inert gas from the third nozzle 13 and the fourth nozzle 14, the control device 110 (control unit 111) closes the second valve V2 and opens the third valve V3. When the third valve V3 is opened, the inert gas flows from the third pipe 33 into the second pipe 32, and the inert gas is supplied to the third nozzle 13 and the fourth nozzle 14 via the second pipe 32. As a result, the inert gas is discharged from the third nozzle 13 and the fourth nozzle 14 into the inside of the chamber 2.

The fourth pipe 34 is supplied with inert gas from the inert gas supply source 21. The fourth pipe 34 distributes the inert gas supplied from the inert gas supply source 21 to the fifth nozzle 15 and the sixth nozzle 16.

The fifth nozzle 15 and the sixth nozzle 16 are disposed below the third nozzle 13 and the fourth nozzle 14. The configuration of the fifth nozzle 15 and the sixth nozzle 16 is similar to that of the first nozzle 11 and the second nozzle 12. The fifth nozzle 15 and the sixth nozzle 16 eject inert gas into the chamber 2, similar to the first nozzle 11 and the second nozzle 12.

A fourth valve V4 is provided in the fourth pipe 34. The fourth valve V4 is an on-off valve that opens and closes the flow path of the fourth pipe 34. Like the first valve V1, the fourth valve V4 controls the flow of the inert gas flowing through the fourth pipe 34. The fourth valve V4 also functions as an adjustment valve that adjusts the flow rate of the inert gas flowing through the fourth pipe 34. The fourth valve V4 is, for example, a solenoid valve. The fourth valve V4 is controlled by the control device 110 (control unit 111).

The fifth pipe 35 is supplied with the water repellent agent SMT from the water repellent agent supply source 23. The fifth pipe 35 is provided with a second heater H2. The second heater H2 heats the water repellent agent SMT to vaporize it. In other words, the second heater H2 generates steam of the water repellent agent SMT. The fifth pipe 35 distributes the steam of the water repellent agent SMT to the seventh nozzle 17 and the eighth nozzle 18.

The seventh nozzle 17 and the eighth nozzle 18 are disposed below the fifth nozzle 15 and the sixth nozzle 16. The seventh nozzle 17 and the eighth nozzle 18 are configured similarly to the first nozzle 11 and the second nozzle 12. The seventh nozzle 17 and the eighth nozzle 18, like the first nozzle 11 and the second nozzle 12, eject vapor of the water repellent agent SMT into the interior of the chamber 2.

The fifth valve V5 is interposed in the fifth pipe 35. The fifth valve V5 is an on-off valve that opens and closes the flow path of the fifth pipe 35. The fifth valve V5 is provided downstream of the second heater H2 with respect to the fifth pipe 35. Like the first valve V1, the fifth valve V5 controls the flow of the steam of the water repellent agent SMT flowing through the fifth pipe 35. The fifth valve V5 also functions as an adjustment valve that adjusts the flow rate of the steam of the water repellent agent SMT flowing through the fifth pipe 35. The fifth valve V5 is, for example, an electromagnetic valve. The fifth valve V5 is controlled by the control device 110 (control unit 111).

The sixth pipe 36 is supplied with DIW from the DIW supply source 24. The sixth pipe 36 distributes the DIW supplied from the DIW supply source 24 to the ninth nozzle 19 and the tenth nozzle 20.

The configuration of the ninth nozzle 19 and the tenth nozzle 20 is the same as that of the first nozzle 11 and the second nozzle 12. DIW is supplied to the ninth nozzle 19 and the tenth nozzle 20 via the sixth pipe 36, and the DIW is discharged from the ninth nozzle 19 and the tenth nozzle 20 into the treatment tank 3.

A sixth valve V6 is provided in the sixth pipe 36. The sixth valve V6 is an on-off valve that opens and closes the flow path of the sixth pipe 36. Like the first valve V1, the sixth valve V6 controls the flow of DIW flowing through the sixth pipe 36. The sixth valve V6 also functions as an adjustment valve that adjusts the flow rate of the DIW flowing through the sixth pipe 36. The sixth valve V6 is, for example, a solenoid valve. The sixth valve V6 is controlled by the control device 110 (control unit 111).

IPA is supplied to the seventh pipe 37 from the IPA supply source 22. The seventh pipe 37 is connected to the sixth pipe 36. In other words, the seventh pipe 37 allows the IPA to flow to the sixth pipe 36.

The seventh valve V7 is provided in the seventh pipe 37. The seventh valve V7 is an on-off valve that opens and closes the flow path of the seventh pipe 37. Like the first valve V1, the seventh valve V7 controls the flow of IPA flowing through the seventh pipe 37. The seventh valve V7 also functions as an adjustment valve that adjusts the flow rate of IPA flowing through the seventh pipe 37. The seventh valve V7 is, for example, a solenoid valve. The seventh valve V7 is controlled by the control device 110 (control unit 111).

When storing DIW in the treatment tank 3, the control device 110 (control unit 111) opens the sixth valve V6 and closes the seventh valve V7. This causes the DIW to be ejected from the ninth nozzle 19 and the tenth nozzle 20 into the treatment tank 3.

Meanwhile, the control device 110 (control unit 111) opens the sixth valve V6 and the seventh valve V7 when storing dIPA in the processing tank 3. By opening the sixth valve V6 and the seventh valve V7, IPA flows from the seventh pipe 37 into the sixth pipe 36, and the IPA joins the DIW flowing through the sixth pipe 36, generating dIPA in the sixth pipe 36. The dIPA is supplied to the ninth nozzle 19 and the tenth nozzle 20 via the sixth pipe 36. As a result, dIPA is ejected from the ninth nozzle 19 and the tenth nozzle 20 into the processing tank 3.

The control device 110 (control unit 111) also adjusts the opening of the sixth valve V6 and the seventh valve V7 so that the concentration of IPA in dIPA becomes a predetermined concentration. The predetermined concentration is 0.3% or more and less than 5%.

The drainage line 41 is connected to the bottom of the treatment tank 3. An eighth valve V8 is interposed in the drainage line 41. The eighth valve V8 is an on-off valve that opens and closes the flow path of the drainage line 41. The eighth valve V8 is, for example, a solenoid valve. The eighth valve V8 is controlled by the control device 110 (control unit 111). The control device 110 (control unit 111) closes the eighth valve V8 when storing the treatment liquid in the treatment tank 3. On the other hand, the control device 110 (control unit 111) opens the eighth valve V8 when discharging the treatment liquid from the treatment tank 3. When the eighth valve V8 is opened, the treatment liquid stored in the treatment tank 3 is discharged from the treatment tank 3 to the outside of the chamber 2 via the drainage line 41.

The decompression unit 25 reduces the pressure inside the chamber 2. That is, the decompression unit 25 reduces the pressure inside the chamber 2. The decompression unit 25 includes, for example, an exhaust pump. The exhaust pump is, for example, a vacuum pump. The decompression unit 25 is controlled by the control device 110 (control unit 111). In detail, the decompression unit 25 is connected to the chamber 2 via an exhaust line 42. The decompression unit 25 exhausts the gas inside the chamber 2 when the cover 2a is in a closed state, and reduces the pressure inside the chamber 2 to less than atmospheric pressure.

Next, the substrate processing apparatus 100 and substrate processing method of this embodiment will be described with reference to Figures 1 to 9. The substrate processing method of this embodiment is performed by the substrate processing apparatus 100 described with reference to Figures 1 and 2. Figures 3 to 9 are flow diagrams showing the substrate processing method of this embodiment. In detail, Figures 3 to 9 show a processing sequence performed by the substrate processing apparatus 100. As shown in Figures 3 to 9, the substrate processing method (processing sequence) of this embodiment includes steps S1 to S21.

First, as shown in FIG. 3, in step S1, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W that has been loaded into the chamber 2 in the DIW stored in the processing bath 3.

A substrate W after etching (wet etching) is carried into chamber 2. By immersing the substrate W after etching in DIW, the etching solution adhering to the surface of the substrate W is washed away with the DIW.

In this embodiment, in step S1, the control device 110 (control unit 111) ejects DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5). This allows the etching solution to be further washed away with water.

In addition, in step S1, the control device 110 (control unit 111) ejects the inert gas from the third nozzle 13 and the fourth nozzle 14. For example, the control device 110 (control unit 111) starts ejecting the inert gas after immersing the substrate W in the DIW. At this time, the pressure reducing unit 25 is not driven. Therefore, the internal pressure of the chamber 2 is atmospheric pressure.

Next, in step S2, the control device 110 (control unit 111) continues to eject the inert gas. Also, in step S2, the control device 110 (control unit 111) stops ejecting the DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5). At this time, the pressure reducing unit 25 is not driven. Therefore, the internal pressure of the chamber 2 is atmospheric pressure.

Next, in step S3, the control device 110 (control unit 111) continues to eject the inert gas. Also, in step S3, the control device 110 (control unit 111) drives the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. At this time, the substrate W is immersed in the DIW. This makes it possible to prevent the substrate W from drying out and the pattern from collapsing.

Next, as shown in FIG. 4, in step S4, the control device 110 (control unit 111) continues reducing the pressure in the chamber 2. The reduction in pressure in the chamber 2 continues until step S12 (FIG. 6). Also, in step S4, the control device 110 (control unit 111) ejects IPA vapor from the third nozzle 13 and the fourth nozzle 14. As a result, an atmosphere containing IPA vapor is formed in the chamber 2. The ejection of IPA vapor continues until step S7 (FIG. 7).

Next, in step S5, the control device 110 (control unit 111) moves the holder 50 to the second processing position and lifts the substrate W out of the DIW. As a result, the water droplets (DIW droplets) adhering to the substrate W are removed by the IPA vapor. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

In addition, in step S5, the control device 110 (control unit 111) opens the eighth valve V8 to drain the DIW from the treatment tank 3 through the drain line 41. The open state of the eighth valve V8 is maintained until step S13 (Figure 7).

According to this embodiment, in step S5, the water droplets can be replaced with IPA droplets under reduced pressure. Therefore, the water droplets can be replaced with IPA droplets in a shorter time than when the replacement is performed under atmospheric pressure.

Next, in step S6, the control device 110 (control unit 111) moves the holder 50 to the first processing position and moves the substrate W into the processing tank 3. At this time, no DIW remains in the processing tank 3.

Next, as shown in FIG. 5, in step S7, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position and lifts the substrate W from the processing bath 3. Also, in step S7, the control device 110 (control unit 111) ejects vapor of the water repellent agent SMT from the seventh nozzle 17 and the eighth nozzle 18. Note that the IPA vapor and the water repellent agent SMT vapor are ejected in step S7 in order to suppress fluctuations in pressure within the chamber 2.

Next, in step S8, the control device 110 (controller 111) continues to eject the vapor of the water repellent agent SMT. Also, in step S8, the control device 110 (controller 111) stops the ejection of the IPA vapor. As a result, the droplets of IPA adhering to the substrate W are replaced with droplets of the water repellent agent SMT, and a water repellent protective film is formed on the surface of the substrate W. Therefore, the pattern formed on the substrate W is covered with the water repellent protective film (water repellent processing). By covering the pattern with the water repellent protective film, it is possible to prevent the pattern from collapsing.

Next, in step S9, the control device 110 (control unit 111) ejects IPA vapor from the third nozzle 13 and the fourth nozzle 14. Also, in step S9, the control device 110 (control unit 111) continues ejecting the vapor of the water repellent agent SMT. The reason why the IPA vapor and the vapor of the water repellent agent SMT are ejected in step S9 is to suppress fluctuations in the pressure inside the chamber 2.

Next, as shown in FIG. 6, in step S10, the control device 110 (control unit 111) stops the ejection of the vapor of the water repellent agent SMT. Also, in step S10, the control device 110 (control unit 111) continues the ejection of the vapor of the IPA. As a result, the residue of the water repellent agent SMT adhering to the substrate W is removed by the vapor of the IPA. More specifically, the residue of the water repellent agent SMT adhering to the substrate W is replaced with droplets of IPA.

Next, in step S11, the control device 110 (control unit 111) ejects the inert gas from the third nozzle 13 and the fourth nozzle 14.

Next, in step S12, the control device 110 (control unit 111) continues to eject the inert gas from the third nozzle 13 and the fourth nozzle 14, and also ejects the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16. As a result, the substrate W is dried. In this embodiment, the substrate W is dried under reduced pressure. By drying the substrate W under reduced pressure, the drying efficiency can be improved compared to drying the substrate W under atmospheric pressure. In other words, the time required to dry the substrate W can be shortened.

Next, as shown in FIG. 7, in step S13, the control device 110 (control unit 111) continues to eject the inert gas from the first nozzle 11 to the sixth nozzle 16 and stops driving the pressure reducing unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

Next, in step S14, the control device 110 (control unit 111) stops the ejection of inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16, while continuing the ejection of inert gas from the third nozzle 13 and the fourth nozzle 14.

In step S14, the control device 110 (control unit 111) closes the eighth valve V8, and then ejects dIPA from the ninth nozzle 19 and the tenth nozzle 20 to store the dIPA in the processing tank 3. At this time, the internal pressure of the chamber 2 is atmospheric pressure. Therefore, the dIPA can be easily stored in the processing tank 3.

Next, in step S15, the control device 110 (control unit 111) stops the discharge of dIPA. Also, in step S15, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W in the dIPA stored in the processing tank 3 (immersion process). As a result, particles generated due to the reaction between the residue of the water repellent agent SMT attached to the substrate W and the IPA are removed by the dIPA. Specifically, the particles generated due to the reaction between the water repellent agent SMT and the IPA dissolve in the water contained in the dIPA.

In addition, in step S15, the control device 110 (control unit 111) continues to discharge the inert gas while driving the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. The reduction in pressure in the chamber 2 continues until step S19 (Figure 9).

In step S15, the control device 110 (control unit 111) may continue to eject dIPA. By continuing to eject dIPA, particles generated due to the reaction between the water repellent agent SMT and IPA can be more effectively removed.

In addition, in step S15, the control device 110 (control unit 111) may swing the holding unit 50 up and down while keeping the substrate W immersed in dIPA. This makes it possible to more effectively remove particles that are generated due to the reaction between the water repellent agent SMT and IPA.

Next, as shown in FIG. 8, in step S16, the control device 110 (control unit 111) ejects IPA vapor from the third nozzle 13 and the fourth nozzle 14. As a result, an atmosphere containing IPA vapor is formed in the chamber 2.

Next, in step S17, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position and lifts the substrate W from the dIPA (lifting process). As a result, the dIPA droplets adhering to the substrate W are removed by the IPA vapor. More specifically, the dIPA droplets adhering to the substrate W are replaced with IPA droplets.

In addition, in step S17, the control device 110 (control unit 111) opens the eighth valve V8 to drain the dIPA from the processing tank 3 through the drain line 41. The open state of the eighth valve V8 is maintained until step S21 (Figure 9).

According to this embodiment, in step S17, the dIPA droplets can be replaced with IPA droplets under reduced pressure. Therefore, the dIPA droplets can be replaced with IPA droplets in a shorter time than when the replacement is performed under atmospheric pressure.

Next, in step S18, the control device 110 (control unit 111) ejects the inert gas from the third nozzle 13 and the fourth nozzle 14.

Next, as shown in FIG. 9, in step S19, the control device 110 (control unit 111) continues to eject the inert gas from the third nozzle 13 and the fourth nozzle 14, and also ejects the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16 (drying process). As a result, the substrate W is dried.

In this embodiment, the substrate W is dried under reduced pressure. By drying the substrate W under reduced pressure, the drying efficiency can be improved compared to drying the substrate W under atmospheric pressure.

Next, in step S20, the control device 110 (control unit 111) continues to eject the inert gas from the first nozzle 11 to the sixth nozzle 16 and stops driving the pressure reducing unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

Next, in step S21, the control device 110 (control unit 111) stops the ejection of inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16, while continuing the ejection of inert gas from the third nozzle 13 and the fourth nozzle 14. At this time, the internal pressure of the chamber 2 is atmospheric pressure.

The first embodiment of the present invention has been described above with reference to Figures 1 to 9. According to this embodiment, particles generated due to the reaction between the residue of the water repellent agent SMT adhering to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

Furthermore, according to this embodiment, before the vapor of the water repellent agent SMT is ejected, the water droplets adhering to the surface of the substrate W can be replaced with droplets of IPA. Therefore, compared to the case where water droplets are adhering to the surface of the substrate W, the droplets of the water repellent agent SMT can be more easily adhered to the surface of the substrate W.

Furthermore, according to this embodiment, before the drying process (step S19), the droplets of dIPA adhering to the surface of the substrate W can be replaced with droplets of IPA. Since IPA has a smaller surface tension than dIPA, the surface tension of the liquid acting on the pattern during the drying process is smaller, making it possible to more effectively prevent the pattern from collapsing.

Furthermore, according to this embodiment, the vapor of the water repellent agent SMT can be discharged under reduced pressure to form a water repellent film on the surface of the substrate W. Therefore, the water repellent film can be formed more easily compared to the case where the vapor of the water repellent agent SMT is discharged under atmospheric pressure to form a water repellent film on the surface of the substrate W.

[Embodiment 2]
Next, a second embodiment of the present invention will be described with reference to Figures 1, 2, 10, and 11. However, only differences from the first embodiment will be described, and a description of the same aspects as the first embodiment will be omitted. In the second embodiment, unlike the first embodiment, the processing after the rinsing process using dIPA is performed under atmospheric pressure.

FIGS. 10 and 11 are flow diagrams showing the substrate processing method of this embodiment. In detail, FIG. 10 and FIG. 11 show a processing sequence executed by the substrate processing apparatus 100. As shown in FIG. 10 and FIG. 11, the substrate processing method (processing sequence) of this embodiment includes steps S31 to S36.

In this embodiment, the control device 110 (controller 111) first executes the processes of steps S1 to S14 described in embodiment 1. Thereafter, as shown in FIG. 10, the control device 110 (controller 111) stops the discharge of dIPA in step S31. Also, in step S31, the control device 110 (controller 111) moves the holder 50 to the first processing position and immerses the substrate W in the dIPA stored in the processing bath 3 (immersion process). As a result, particles generated due to the reaction between the residue of the water repellent agent SMT attached to the substrate W and the IPA are removed by the dIPA.

In addition, in step S31, the control device 110 (control unit 111) continues to eject the inert gas, as in step S15. However, unlike step S15, the control device 110 (control unit 111) does not drive the pressure reducing unit 25. Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. The internal pressure of the chamber 2 is maintained at atmospheric pressure until step S34 (Figure 11).

In step S31, the control device 110 (controller 111) may continue discharging dIPA, as in step S15. In step S31, the control device 110 (controller 111) may swing the holder 50 up and down while keeping the substrate W immersed in dIPA, as in step S15.

Next, in step S32, the control device 110 (control unit 111) ejects IPA vapor from the third nozzle 13 and the fourth nozzle 14. As a result, an atmosphere containing IPA vapor is formed in the chamber 2.

Next, in step S33, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position and lifts the substrate W from the dIPA (lifting process). Also in step S33, the control device 110 (control unit 111) opens the eighth valve V8 to drain the dIPA from the processing tank 3 through the drain line 41. The open state of the eighth valve V8 is maintained until step S36 (FIG. 11).

Next, as shown in FIG. 11, in step S34, the control device 110 (control unit 111) continues to eject the IPA vapor. As a result, the dIPA droplets adhering to the substrate W are removed by the IPA vapor.

Next, in step S35, the control device 110 (control unit 111) drives the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. Also, in step S35, the control device 110 (control unit 111) dries the substrate W by ejecting an inert gas from the third nozzle 13 and the fourth nozzle 14 (drying process).

In this embodiment, the substrate W is dried under reduced pressure. By drying the substrate W under reduced pressure, the drying efficiency can be improved compared to drying the substrate W under atmospheric pressure.

Next, in step S36, the control device 110 (control unit 111) continues to eject inert gas from the third nozzle 13 and the fourth nozzle 14, and also ejects inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16. Also, in step S36, the control device 110 (control unit 111) stops driving the pressure reducing unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

According to this embodiment, the internal pressure of the chamber 2 can be efficiently returned to atmospheric pressure by ejecting the inert gas from the first nozzle 11 to the sixth nozzle 16.

The second embodiment of the present invention has been described above with reference to Figures 1, 2, 10, and 11. According to this embodiment, particles generated due to the reaction between the residue of the water repellent agent SMT adhering to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

[Embodiment 3]
Next, a third embodiment of the present invention will be described with reference to Figures 1, 2, and 12 to 15. However, differences from the first and second embodiments will be described, and a description of the same aspects as the first and second embodiments will be omitted. Unlike the first and second embodiments, the third embodiment performs processing under atmospheric pressure.

FIGS. 12 to 15 are flow diagrams showing the substrate processing method of this embodiment. In particular, FIG. 12 to FIG. 15 show a processing sequence executed by the substrate processing apparatus 100. As shown in FIG. 12 to FIG. 15, the substrate processing method (processing sequence) of this embodiment includes steps S41 to S52.

First, as shown in FIG. 12, in steps S41 and S42, the control device 110 (control unit 111) performs the same processing as steps S1 and S2 described in embodiment 1. The processing of steps S41 and S42 is similar to steps S1 and S2 described in embodiment 1, and therefore the description thereof will be omitted.

Next, in step S43, the control device 110 (control unit 111) continues to eject the inert gas from the third nozzle 13 and the fourth nozzle 14, similar to step S3 described in embodiment 1. On the other hand, in step S43, the control device 110 (control unit 111) does not drive the pressure reducing unit 25, unlike step S3 described in embodiment 1. Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. The internal pressure of the chamber 2 is maintained at atmospheric pressure until step S52 (Figure 15).

Next, as shown in FIG. 13, in steps S44 and S45, the control device 110 (control unit 111) performs the same processes as steps S4 and S5 described in embodiment 1. The processes in steps S44 and S45 are similar to steps S4 and S5 described in embodiment 1 except that they are performed under atmospheric pressure, and therefore will not be described again. In step S45, the control device 110 (control unit 111) opens the eighth valve V8 to drain the DIW from the processing tank 3 via the drain line 41. The open state of the eighth valve V8 is maintained until step S50 (FIG. 15).

Next, in step S46, the control device 110 (control unit 111) continues to eject the IPA vapor and maintains the position of the holding unit 50 at the second processing position. As a result, the water droplets (DIW droplets) adhering to the substrate W are removed by the IPA vapor. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

Next, as shown in FIG. 14, in steps S47 to S49, the control device 110 (control unit 111) performs the same processes as steps S7 to S9 described in embodiment 1. The processes in steps S47 to S49 are the same as steps S7 to S9 described in embodiment 1, except that they are performed under atmospheric pressure, and therefore will not be described here.

Next, as shown in FIG. 15, in step S50, the control device 110 (control unit 111) performs the same process as step S10 described in embodiment 1. The process of step S50 is the same as step S10 described in embodiment 1 except that it is performed under atmospheric pressure, and therefore a description thereof will be omitted.

Next, in step S51, the control device 110 (control unit 111) continues to eject the IPA vapor. Also in step S51, the control device 110 (control unit 111) closes the eighth valve V8, and then ejects dIPA from the ninth nozzle 19 and the tenth nozzle 20, causing the dIPA to accumulate in the processing tank 3. At this time, the internal pressure of the chamber 2 is atmospheric pressure. Therefore, the dIPA can be easily stored in the processing tank 3.

Next, in step S52, the control device 110 (control unit 111) stops the ejection of dIPA. Also in step S52, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W in the dIPA stored in the processing tank 3 (immersion process). As a result, particles generated due to the reaction between the residue of the water repellent agent SMT adhering to the substrate W and the IPA are removed by the dIPA. Also in step S52, the control device 110 (control unit 111) continues the ejection of the IPA vapor.

Then, the control device 110 (control unit 111) executes the processes of steps S33 to S36 described in embodiment 2.

In step S52, the control device 110 (controller 111) may continue discharging dIPA, as in step S15. In step S52, the control device 110 (controller 111) may swing the holder 50 up and down while keeping the substrate W immersed in dIPA, as in step S15.

The third embodiment of the present invention has been described above with reference to Figures 1, 2, and 12 to 15. According to this embodiment, the cleanliness of the substrate W can be improved, as in the first and second embodiments. Furthermore, according to this embodiment, since the internal pressure of the chamber 2 is maintained at atmospheric pressure, after the residue of the water repellent agent SMT adhering to the substrate W is removed by IPA vapor (after step S50), dIPA can be supplied into the processing bath 3 without performing the drying process (steps S11 to S13 described in the first embodiment).

The above describes embodiments of the present invention with reference to the drawings (Figs. 1 to 15). However, the present invention is not limited to the above embodiments, and can be implemented in various aspects without departing from the gist of the present invention. In addition, the components disclosed in the above embodiments can be modified as appropriate. For example, a component among all the components shown in one embodiment may be added to a component of another embodiment, or some of all the components shown in one embodiment may be deleted from the embodiment.

The drawings are primarily schematic illustrations of each component to facilitate understanding of the invention, and the thickness, length, number, spacing, etc., of each component shown may differ from the actual configuration due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

For example, in the embodiment described with reference to Figures 1 to 15, the rinsing process of the etching liquid with DIW was performed in the processing tank 3 of the drying processing unit 101, but the rinsing process of the etching liquid with DIW may be performed in a processing tank of a processing unit other than the drying processing unit 101. For example, the rinsing process of the etching liquid with DIW may be performed in a processing tank of a processing unit that etches the substrate W.

In the embodiment described with reference to Figures 1 to 15, the water-repellent treatment is performed in chamber 2 of the drying treatment unit 101, but the water-repellent treatment may be performed in a chamber of a treatment unit different from the drying treatment unit 101.

In the embodiment described with reference to Figures 1 to 15, the substrate W is oscillated in the vertical direction while it is immersed in dIPA, but the direction in which the substrate W is oscillated is not limited to the vertical direction. Regardless of the direction in which the substrate W is oscillated, the removal of particles can be promoted. For example, the substrate W may be oscillated in the horizontal direction while it is immersed in dIPA.

In the embodiment described with reference to Figures 1 to 15, the substrate W is made water-repellent using vaporized water-repellent agent SMT, but liquid water-repellent agent SMT may be stored in the processing tank 3, and the substrate W may be immersed in the water-repellent agent SMT in the processing tank 3.

In the embodiment (embodiment 3) described with reference to Figures 1, 2, and 12 to 15, steps S33 to S36 described in embodiment 2 are performed after step S52, but as shown in Figure 16, the processing after step S52 may be performed under reduced pressure. Below, another embodiment of the present invention will be described with reference to Figure 16.

Figure 16 is a flow diagram showing a substrate processing method according to another embodiment of the present invention. As shown in Figure 16, the substrate processing method (processing sequence) of this embodiment includes steps S52 and S61.

As shown in FIG. 16, after performing the processes of steps S41 to S52 described in embodiment 3, the control device 110 (control unit 111) may continue to eject the IPA vapor in step S61 while driving the pressure reducing unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure in the chamber 2 is reduced to below atmospheric pressure. In other embodiments, after step S61, the processes of steps S17 to S21 described in embodiment 1 are performed.

The present invention is useful for methods and apparatus for processing substrates.

2: Chamber 3: Processing tank 4: Gas supply section 5: Liquid supply section 21: Inert gas supply source 22: IPA supply source 23: Water repellent agent supply source 24: DIW supply source 25: Pressure reduction section 100: Substrate processing apparatus 101: Processing unit (drying processing unit)
103: Lifting unit 110: Control device 111: Control unit 112: Memory unit W: Substrate

Claims (14)

A substrate processing method for processing a substrate, comprising the steps of:
storing the diluted isopropyl alcohol in a treatment tank;
supplying a vaporized organic solvent to the water-repellent treated substrate;
and after the step of supplying the organic solvent, an immersion step of lowering the substrate having a residual water repellent agent on its surface from an upper position above the treatment tank and immersing the substrate in the liquid state of the diluted isopropyl alcohol in the treatment tank. The substrate processing method according to claim 1, further comprising a step of drying the water-repellent-treated substrate before immersing the substrate in the diluted isopropyl alcohol in the processing tank. The substrate processing method according to claim 1 or 2, wherein in the step of supplying the organic solvent, a vaporized water repellent agent is supplied into the sealed space that contains the processing tank to perform the water repellent processing on the substrate. immersing the substrate in a rinse liquid stored in the treatment tank;
removing the substrate from the rinsing liquid;
and draining the rinsing liquid from the treatment tank.
The substrate processing method according to claim 3 , wherein the water repellency treatment is performed after the rinsing liquid is drained. The substrate processing method according to claim 3 or 4, wherein in the step of supplying the organic solvent, a vaporized organic solvent is supplied into the sealed space. The substrate processing method according to any one of claims 3 to 5, wherein the water repellent treatment is performed by reducing the pressure in the sealed space. The substrate processing method according to claim 6, further comprising a step of returning the pressure in the sealed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank. a step of lifting the substrate out of the diluted isopropyl alcohol;
The substrate processing method according to claim 1 , further comprising: a drying step of drying the substrate pulled out of the diluted isopropyl alcohol. The step of supplying the organic solvent is carried out before the step of pulling up,
9. The substrate processing method according to claim 8, wherein the drying step includes a step of supplying an inert gas into an enclosed space that contains the processing bath. The substrate processing method according to claim 8 or 9, wherein the drying step is performed by reducing the pressure in an enclosed space that contains the processing tank. The substrate processing method according to any one of claims 1 to 10, wherein the diluted isopropyl alcohol is supplied to the processing tank in the immersion step. The substrate processing method according to any one of claims 1 to 11, wherein the substrate is vibrated in the immersion step. The substrate processing method according to any one of claims 1 to 12, wherein the concentration of isopropyl alcohol in the diluted isopropyl alcohol is 0.3% or more and less than 5%. A substrate processing apparatus for processing a substrate,
A treatment tank for storing liquid diluted isopropyl alcohol, which is diluted isopropyl alcohol;
a chamber for accommodating the treatment tank;
a moving unit that moves the substrate between a first processing position in the processing tank and a second processing position outside the processing tank in the chamber;
a nozzle for supplying a vaporized organic solvent to the water-repellent treated substrate;
a control unit that controls the moving unit to lower the substrate having a residual water repellent agent on its surface from a position above the treatment tank and immerse the substrate in the liquid state of the diluted isopropyl alcohol in the treatment tank.

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