JP7709944B2 - Substrate Processing Equipment - Google Patents

Description

The present invention relates to a substrate processing apparatus. In particular, the present invention relates to a substrate processing apparatus that processes a substrate to be processed in a vertical position (film formation upright position) and is used for processing a substrate, such as deposition, sputtering, CVD, and other film formation processes, and heating processes.

In the fields of semiconductor devices and flat panel displays (FPDs), sputtering and deposition are used as methods for forming various thin films on substrates (objects to be processed). In a sputtering apparatus, a mask and a substrate are placed facing a target attached to a cathode in a chamber where a reduced pressure atmosphere is maintained, and a film is formed on the substrate. In a deposition apparatus, a mask is placed between a deposition source and a substrate in a chamber where a reduced pressure atmosphere is maintained, and a film is formed on the substrate.

As disclosed in Patent Document 1, a rotary support mechanism is known that supports and rotates a substrate between a horizontal transport position and a film-forming standing position. The rotary support mechanism has a substrate holder that holds the substrate, and a rotation shaft that rotates the substrate holder. In a substrate processing apparatus equipped with such a rotary support mechanism, the substrate holder supports a substrate that has been transported horizontally inside a chamber, and the rotation shaft rotates the substrate holder so that the substrate holder is in a vertical position. This positions the substrate in a substantially vertically standing position. During film formation, vertical film formation is performed on the substrate with the substrate held vertically together with the substrate holder.

JP 2010-165571 A

During the rotation operation in which the position of the substrate is changed from a horizontal transport position to a film formation standing position to stand the substrate approximately vertically, the center of gravity of the substrate supported by the substrate holding part and the center of gravity of the substrate holding part move. As a result of this center of gravity movement, the position of the substrate and the relative positions of the components that make up the rotation support mechanism (hereinafter referred to as components) may change. In recent years, as substrates have become larger, the weight of the rotation support mechanism that rotates the substrate has increased, and the change in the position of the components due to the above-mentioned center of gravity movement can no longer be ignored.

In particular, when the positions of the components change as the rotary support mechanism is driven, impacts occur between the components, and there is a risk that particles will be generated due to the impacts.
Furthermore, because the substrate is becoming larger, when the position of the component parts changes with the drive of the rotary support mechanism, the amount of change becomes larger at positions farther from the rotary shaft. This causes a problem that the alignment accuracy of the substrate decreases, the distance between the film formation source and the substrate changes, and the thickness of the film formed on the substrate does not become the desired thickness. In addition, when the alignment accuracy decreases due to the change in the position of the component parts caused by the rotary drive, the component parts come into contact with each other, and the required potential cannot be maintained. This causes a risk that the film formation conditions cannot be maintained at the required state.

As a result, the action of rotating the substrate between the horizontal transport position and the film-forming standing position can cause displacement and impact between components, which can lead to a problem of reduced yield in FPD manufacturing.

The present invention has been made in consideration of the above circumstances, and achieves the following objects.
1. By changing the position of the substrate from the horizontal transport position to the film formation standing position, the occurrence of impacts on components constituting the rotation support mechanism during the rotation operation for standing the substrate substantially vertically is suppressed.
2. To suppress fluctuations in film formation conditions caused by the rotation of the substrate.
3. Suppress particle generation.
4. Improve workability.

The inventors conducted extensive research into the causes of displacement and impact between components when the rotary support mechanism is driven to rotate, and as a result, they discovered that displacement and impact between such components can occur due to movement of the center of gravity of the rotary support mechanism.
Specifically, when the substrate holder is in the horizontal transport position, the center of gravity of the substrate holder is located on a line extending in a substantially horizontal direction as viewed from the rotation axis. When the rotation axis starts to rotate, the substrate holder supporting the substrate starts to rotate so as to rise from the horizontal transport position, gradually approaching the film formation standing position. The position of the center of gravity of the substrate holder also moves with the rotation of the rotation axis. Before the substrate holder reaches the film formation standing position, the position of the center of gravity of the substrate holder supporting the substrate passes through a position on a line extending vertically from the rotation axis (hereinafter referred to as a vertical line). In other words, with the rotation of the rotation axis, the position of the center of gravity of the substrate holder supporting the substrate moves so as to straddle the vertical line. When the substrate holder reaches the film formation standing position, the rotation of the substrate holder stops. At this time, the position of the center of gravity of the substrate holder at the film formation standing position is located on the opposite side to the center of gravity of the substrate holder at the horizontal transport position as viewed from the rotation axis.

When such a rotating support mechanism is driven, as the rotating shaft rotates, the position of the center of gravity of the substrate holding part supporting the substrate moves horizontally across a line extending vertically from the rotating shaft. Therefore, when the rotating support mechanism is viewed in the direction in which the rotating shaft extends, the direction of the moment generated on the rotating shaft changes from clockwise to counterclockwise as the center of gravity of the substrate holding part supporting the substrate moves. Alternatively, when the rotating support mechanism is viewed in the opposite direction to the direction in which the rotating shaft extends, the direction of the moment generated on the rotating shaft changes from counterclockwise to clockwise as the center of gravity of the substrate holding part supporting the substrate moves.

The inventor discovered that the center of gravity of the substrate holder that supports the substrate moves across a line extending vertically from the rotation axis, in other words, the direction of the moment generated in the rotation axis changes from one direction to the other, causing displacement and impact between the components.

In particular, as substrates become larger, the distance between the center of gravity of the substrate holder that supports the large substrate and the center of rotation of the rotating shaft also increases. For this reason, when the rotating shaft rotates the substrate holder, the moment generated on the rotating shaft also increases. This is thought to increase the amount of displacement and the magnitude of impact between the components. Furthermore, in a vacuum atmosphere where film formation and heat treatment are performed, thermal deformation occurs in the components of the rotation support mechanism. It is difficult to actually measure the occurrence of misalignment and gaps between components caused by thermal deformation. It is thought that such misalignment and gaps that occur between components affect the increase in the amount of displacement and the magnitude of impact between the components.

For this reason, the inventors considered that if it were possible to obtain a structure that achieves the following points, it would be possible to suppress displacement and impact between components, including the substrate holding part that makes up the rotary support mechanism.
- Suppressing fluctuations in the load generated on the substrate holder.
Suppressing the occurrence of backlash in the drive gear that constitutes the reducer that imparts rotational force to the rotating shaft.
- Suppressing the occurrence of twisting of the rotating shaft.
- Suppression of deformation such as bending in the substrate holding portion.
- Suppressing variations in clearance between components of the rotary support mechanism.
- Suppression of misalignment between components of the rotation support mechanism.
- Suppression of movement of the substrate holder across a line extending vertically from the axis of rotation.

A substrate processing apparatus according to one aspect of the present invention includes a film formation chamber including a processing chamber having a substrate processing section for performing a surface treatment on the substrate, and a rear chamber adjacent to the processing chamber and supporting the substrate during the surface treatment in the processing chamber; a mask disposed in the rear chamber, standing upright to face the processing chamber , and having a film formation port ; a rotation support mechanism having a rotation shaft rotatable about a rotation center, and a substrate holding part attached to the rotation shaft and capable of supporting the substrate in the rear chamber, and rotating the substrate holding part supporting the substrate between a horizontal transport position and a film formation standing position. The rear chamber has a transport port through which the substrate passes in the transport direction of the substrate. The internal space of the film formation chamber includes a front space and a rear space. The front space is a space in which a film formation surface of the substrate is exposed through the film formation port of the mask during the surface treatment. The rear space is a space facing the rear surface of the substrate during the surface treatment. The boundary position between the front space and the rear space is located closer to the transfer opening in the transfer direction than the boundary position between the processing chamber and the rear chamber. At the horizontal transfer position of the substrate, the substrate holder supports the substrate so as to face the horizontal direction so as to be able to move the substrate in the horizontal direction through the transfer opening. At the film-forming standing position of the substrate, the substrate holder supports the substrate so as to face the mask when performing the surface treatment on the substrate . In the rotation direction of the substrate holder from the horizontal transfer position to the film-forming standing position, the position of the center of gravity of the substrate holder at the film-forming standing position does not exceed a position directly above the rotation shaft in the vertical direction. The rotation support mechanism includes a platform provided integrally with the rotation shaft, a flange provided integrally with the substrate holder, and a fastening member fastened to the platform through the flange. The platform has a first mounting plane that abuts on the flange. The flange has a second mounting plane that abuts on the platform. The first mounting plane is a plane along the axial direction of the rotating shaft and a tangential direction to the outer circumferential surface of the rotating shaft. With the first mounting plane and the second mounting plane in contact with each other, the board holder is fastened to the rotating shaft by the fastening member that penetrates the flange in a direction intersecting with the second mounting plane.

In other words, even when a rotational drive is performed to rotate the substrate holding portion from the horizontal transport position to the film forming standing position, the position of the horizontal center of gravity of the substrate holding portion at the film forming standing position does not exceed a line extending vertically from the rotation axis in the rotational direction.
Furthermore, in the direction of rotation, the position of the center of gravity of the substrate holding part in the horizontal direction does not move across a line extending vertically from the axis of rotation.
In the rotational movement of the substrate holder, the range of movement between the center of gravity of the substrate holder in the horizontal transport position and the center of gravity of the substrate holder in the film formation standing position does not cross a line extending vertically from the rotation axis.
In addition, in the film formation standing position, the center of gravity of the substrate holder in the horizontal direction is located directly above the rotation axis in the vertical direction, or reaches a position slightly before the position directly above the rotation axis in the rotation direction. Here, "a position slightly before" means an angle slightly smaller than the position of a line (90°) extending vertically from the rotation axis.

According to the above configuration, when the substrate holder is rotated from the horizontal transport position to the film formation standing position, the magnitude of the moment acting on the rotation axis due to the weight of the substrate holder changes with the rotation of the substrate holder. However, the position of the center of gravity of the substrate holder in the horizontal direction does not move across a line extending vertically from the rotation axis, and does not exceed a position directly above the rotation axis in the vertical direction.
Therefore, even if the magnitude of the moment acting on the rotation shaft changes, the direction of the moment acting on the rotation shaft during rotation between the horizontal transport position and the film-forming standing position does not change to the opposite direction. That is, during the rotation drive of the substrate holder from the horizontal transport position to the film-forming standing position, a moment acting in the opposite direction to the rotation direction from the horizontal transport position to the film-forming standing position is generated, but it is possible to prevent the moment from being generated in the forward direction to the rotation direction.

This makes it possible to suppress displacement and impact between components constituting the rotary support mechanism even if the center of gravity of the substrate holder moves due to rotation of the rotating shaft. Therefore, even if the substrate holder is rotated while supporting a large substrate having a side length exceeding 1800 mm, it is possible to suppress the occurrence of excessive impact, and the following effects can be obtained.
The fluctuation of the load acting on the substrate holder can be suppressed.
The occurrence of backlash in the drive gear that constitutes the reducer that applies a rotational force to the rotating shaft can be suppressed.
・The occurrence of twisting of the rotating shaft can be suppressed.
Deformation such as bending of the substrate holder can be suppressed.
Fluctuations in clearance between components of the rotation support mechanism can be suppressed.
The occurrence of misalignment between the components of the rotation support mechanism can be suppressed.
It is possible to prevent the substrate holder from moving across a line extending vertically from the rotation axis.

This makes it possible to suppress the generation of particles caused by impacts on the rotating support mechanism, and to prevent cracks and chips on the substrate caused by the impacts. This makes it possible to improve the processing characteristics in processing the substrate, such as film formation.

Furthermore, in the film formation standing position in the rotary support mechanism, the center of gravity of the substrate holding part is located directly above the rotation axis in the vertical direction, or reaches a position slightly before the position directly above the rotation axis in the rotation direction. This makes it possible to suppress fluctuations in the distance between the substrate and the substrate processing part provided in the processing chamber. It is also possible to suppress fluctuations in the distance between the substrate holding part and the mask. This makes it possible to prevent contact between the substrate holding part and the mask. It is also possible to prevent changes in the electrical state, such as the potential of the substrate, when processing the substrate. This makes it possible to improve the processing characteristics in processing the substrate, such as film formation.

According to the above configuration, a fastening friction surface is generated at the fastening location where the rotating shaft and the substrate holding part are fastened. The direction in which a misalignment such as slippage occurs at such a fastening friction surface, i.e., the direction in which the rotating shaft and the substrate holding part are misaligned with respect to each other, can be set along the first mounting plane and the second mounting plane. Therefore, the direction in which the rotating shaft and the substrate holding part are misaligned with respect to each other can be limited, regardless of the rotational position of the substrate holding part in the rotational direction of the rotating shaft. The possibility of the rotating shaft and the substrate holding part being misaligned with respect to each other can be reduced.
In addition, at the film formation standing position of the substrate holder where misalignment occurs between the rotating shaft and the substrate holder, the fastening point is located at the lowest position of the substrate holder. Therefore, it is possible to suppress the occurrence of misalignment at the lowest position of the substrate holder, and to reduce displacement and impact between components of the rotary support mechanism. In particular, it is possible to reduce displacement and impact between the rotating shaft and the substrate holder.

In the conventional fixing structure between the substrate holder and the rotating shaft, a flange portion formed on the rotating shaft on the radially outer side and a fastening surface formed on the substrate holder and in contact with the flange are fastened by a fastening member extending parallel to the rotating shaft. In this structure, the flange portion and the fastening surface are misaligned with each other in the circumferential direction of the rotating shaft at a fastening friction surface between the flange portion and the fastening surface.
In contrast, according to the above-described configuration, the fastening member penetrates the flange portion in a direction intersecting with the second mounting plane, and the board holder is fastened to the rotating shaft by the fastening member, thereby obtaining a structure in which misalignment in the circumferential direction of the rotating shaft does not occur.

In a substrate processing apparatus according to one aspect of the present invention, a first engagement portion is formed on the first mounting plane. A second engagement portion is formed on the second mounting plane. When the first mounting plane and the second mounting plane are in contact with each other, the first engagement portion and the second engagement portion may be engaged with each other.

According to the above-mentioned configuration, it is possible to prevent the first mounting plane and the second mounting plane from slipping against each other. In particular, in the rotation support mechanism, it is possible to prevent the substrate holder from slipping against the rotation shaft in a direction in which the substrate holder falls in response to gravity. For this reason, the first engagement portion and the second engagement portion can be called anti-slip portions.
The first and second engaging portions can be used to improve the workability and shorten the work time when attaching the substrate holder to the rotating shaft. The anti-slip portion can be formed at the lower end positions of the first and second mounting planes in the horizontal conveying position.

In a substrate processing apparatus according to one aspect of the present invention, the rotation support mechanism may have a non-contact stop part that stops the substrate holding part at the film-forming standing position during rotational drive that rotates the substrate holding part from the horizontal transport position to the film-forming standing position.

According to the above configuration, when the substrate holding portion rotates from the horizontal transport position to the film formation standing position in accordance with the rotational drive of the rotating shaft, the non-contact stop portion can stop the rotation of the substrate holding portion so that the mask or other member does not come into contact with the substrate holding portion. This prevents contact between the mask or other member and the substrate holding portion, thereby preventing the generation of particles due to impact on the substrate holding portion. Therefore, it becomes possible to perform surface treatment on the substrate in an atmosphere where particle generation is prevented. Furthermore, the rotational drive of the rotating shaft can be easily controlled.

In the substrate processing apparatus according to one aspect of the present invention, the mask may be disposed between the boundary position between the processing chamber and the rear chamber and the substrate in the film formation standing position.

According to the above configuration, the rotating shaft can be arranged on the rotary support mechanism so that there is sufficient positional margin for attaching the rotating shaft to the chamber wall forming the rear chamber. Here, in the film formation standing position, the rotating shaft supports a position directly below the substrate holding part standing along the mask. In addition, in order to transmit the power output from the rotary drive source arranged outside the rear chamber to the substrate holding part, it is necessary for the rotating shaft to penetrate the chamber wall of the rear chamber. Furthermore, it is necessary to arrange a seal member or the like on the chamber wall around the rotating shaft. For this reason, it is necessary to have sufficient positional margin in the arrangement of the rotating shaft attached to the rear chamber so as to penetrate the chamber wall of the rear chamber.
Here, examples of an arrangement of the rotating shaft that has positional leeway include an arrangement in which the position where the rotating shaft penetrates the chamber wall of the rear chamber is not too close to the boundary position between the processing chamber and the rear chamber, or an arrangement in which the position where the rotating shaft penetrates the chamber wall of the rear chamber is not too close to the bottom of the chamber wall of the rear chamber.
This eliminates the problem that occurs when the mask approaches the boundary between the processing chamber and the rear chamber, i.e., there is no space to attach the rotating shaft to the chamber wall that forms the rear chamber.

In the substrate processing apparatus according to one aspect of the present invention, the substrate processing unit may face the mask and protrude from the boundary position between the processing chamber and the rear chamber toward the rear chamber.

Specifically, each of the processing chamber and the rear chamber has a connection end. The position where the connection end of the processing chamber and the connection end of the rear chamber connect corresponds to the boundary position between the processing chamber and the rear chamber. Here, when the processing chamber and the rear chamber are separated from each other, the connection end of the processing chamber is separated from the connection end of the rear chamber. In such a separated state, the substrate processing unit protrudes from the connection end of the processing chamber.
Therefore, when the processing chamber and the rear chamber are separated from each other, for example, when performing maintenance on the processing chamber and the rear chamber, a lifting mechanism such as a crane used for maintenance can be easily brought close to a position above the substrate processing unit. The substrate processing unit can be lifted by the lifting mechanism and easily removed from the processing chamber in an upward direction, and the substrate processing unit can be moved outside the processing chamber. This simplifies and facilitates the work required for maintenance, such as installation and removal of the substrate processing unit, and shortens the work time.

On the other hand, in a structure in which the substrate processing section is disposed inside the processing chamber without protruding from the connecting end of the processing chamber, when removing the substrate processing section, it is necessary to move the substrate processing section horizontally from the processing chamber through an opening at the boundary position between the processing chamber and the rear chamber, and then move the substrate processing section upward from the processing chamber. In other words, a two-stage removal operation is required to remove the substrate processing section from the processing chamber.
In contrast, according to the substrate processing apparatus according to one aspect of the present invention, the substrate processing unit can be easily removed upward from the processing chamber by a single-stage removal operation.

Here, if the substrate processing section has a deposition source, it is easy to move the deposition source. Also, if the substrate processing section has a cathode unit, it is easy to move the backing plate and target that constitute the cathode unit.

In the substrate processing apparatus according to the aspect of the present invention, the substrate processing section may include a deposition source, and a deposition process may be performed on the substrate in the front space .

According to the above configuration, when a film is formed on a substrate by deposition, damage to the substrate due to cracks, chips, etc., caused by the rotational movement of the substrate holder in the rotary support mechanism can be prevented. At the same time, the distance between the mask and the substrate can be properly maintained to prevent deterioration of the film formation characteristics. At the same time, the generation of particles can be suppressed, preventing deterioration of the film formation characteristics.

In the substrate processing apparatus according to an aspect of the present invention, the substrate processing section may include a cathode electrode, and a sputtering process may be performed on the substrate in the front space .

According to the above configuration, when a film is formed on a substrate by sputtering, damage to the substrate due to cracks, chips, etc., occurring in the substrate being processed caused by the rotational movement of the substrate holding part in the rotary support mechanism is prevented. At the same time, the distance between the mask and the substrate is appropriately maintained, the potential state required for sputtering is maintained, and deterioration of the film formation characteristics is prevented. At the same time, the generation of particles can be suppressed, and deterioration of the film formation characteristics can be prevented.

According to a substrate processing apparatus according to one aspect of the present invention, when a substrate is rotated between a horizontal transport position, which is a transport position, and a film-forming standing position, which is a processing position, it is possible to suppress displacement and impact between components constituting a rotation support mechanism. Furthermore, it is possible to prevent cracks and chips in the substrate, suppress particle generation, and properly maintain the distance of the substrate processing unit from the substrate and mask, thereby preventing fluctuations in the surface processing state of the substrate. It is possible to improve the processing characteristics in processing of the substrate, such as film formation.

1 is a schematic plan view showing a substrate processing apparatus according to a first embodiment of the present invention; 2 is a schematic side view showing a back chamber and a processing chamber in the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic side view showing a rotation support mechanism in the substrate processing apparatus according to the first embodiment of the present invention. FIG. FIG. 2 is an enlarged view of a main part of a rotary support mechanism in the substrate processing apparatus according to the first embodiment of the present invention, and is a cross-sectional view showing a fastening structure between a substrate holder and a rotary shaft. 2 is a schematic plan view showing a substrate holding part of a rotary support mechanism in the substrate processing apparatus according to the first embodiment of the present invention; FIG. FIG. 2 is a schematic side view showing a back chamber and a processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, for explaining a surface processing step for a substrate. FIG. 2 is a schematic side view showing a back chamber and a processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, for explaining a surface processing step for a substrate. FIG. 2 is a schematic side view showing a back chamber and a processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, for explaining a surface processing step for a substrate. FIG. 2 is a schematic side view showing a back chamber and a processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, for explaining a surface processing step for a substrate. FIG. 2 is a schematic side view showing a back chamber and a processing chamber in the substrate processing apparatus according to the first embodiment of the present invention, for explaining a surface processing step for a substrate.

A substrate processing apparatus according to a first embodiment of the present invention will now be described with reference to the drawings.
It should be noted that the present embodiment is specifically described to allow a better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified.

In this embodiment, an XYZ Cartesian coordinate system is set up to explain the positional relationship of each component. The direction of gravity, i.e., the direction parallel to the vertical direction, is referred to as the Z direction. Within the Z direction, the direction that coincides with the direction of gravity is referred to as the downward direction (downward), and the direction opposite to the direction of gravity is referred to as the upward direction (upward). In the following explanation, "planar view" means viewing an object in the direction of gravity or downward. The transport direction of the glass substrate is referred to as the horizontal direction or X direction. The direction perpendicular to the Z direction and X direction is referred to as the Y direction.

<Substrate Processing Apparatus>
FIG. 1 is a schematic plan view showing a substrate processing apparatus in this embodiment. In FIG. 1, reference numeral 1 denotes a substrate processing apparatus. The substrate processing apparatus 1 is applied to an interback sputtering apparatus that performs heating, film formation, etching, and the like in a vacuum environment on a substrate 11 made of glass or resin, or a deposition apparatus used for manufacturing an organic EL. The substrate processing apparatus 1 is used, for example, in the manufacturing process of an FPD (Flat Panel Display). In this case, for example, a TFT (Thin Film Transistor) can be formed on the substrate 11. In this embodiment, a case where the substrate processing apparatus 1 is a sputtering apparatus will be described. In other words, the surface treatment performed in the substrate processing apparatus 1 is a film formation process, that is, a sputtering process.

The substrate processing apparatus 1 includes a deposition chamber 4, 4A and a load/unload chamber 2, 2A. The multiple chambers 2, 2A, 4, 4A are arranged to surround the periphery of a transfer chamber 3. Each of the multiple chambers 2, 2A, 4, 4A is, for example, two load/unload chambers (chambers) 2, 2A and two deposition chambers (chambers) 4, 4A formed adjacent to each other. The substrate processing apparatus 1 also has a control device (not shown) that controls the substrate processing apparatus 1. The control device controls the operation in the deposition chambers 4, 4A and the load/unload chambers 2, 2A. As described below, the control device controls the rotation operation of the rotation support mechanism 10 in the deposition chambers 4, 4A.

<Loading/unloading room>
For example, one of the loading/unloading chambers 2 functions as a loading chamber for carrying the glass substrate 11 from the outside to the inside of the substrate processing apparatus 1. The other loading/unloading chamber 2A functions as an unloading chamber for carrying the glass substrate 11 from the inside to the outside of the substrate processing apparatus 1. The same film formation process may be performed in the film formation chamber 4 and the film formation chamber 4A, or different film formation processes may be performed in each chamber. The glass substrate 11 is an example of a "substrate".

Gate valves are provided between the load/unload chamber 2 and the transfer chamber 3, between the load/unload chamber 2A and the transfer chamber 3, between the deposition chamber 4 and the transfer chamber 3, and between the deposition chamber 4A and the transfer chamber 3.

A positioning member is arranged in the load/unload chamber 2. A glass substrate 11 that is brought into the load/unload chamber 2 from the outside is placed on the positioning member. The positioning member sets the position of the glass substrate 11, enabling alignment of the glass substrate 11. A rough exhaust unit that reduces the pressure (roughly evacuates) the internal space of the load/unload chamber 2 is connected to the load/unload chamber 2. The rough exhaust unit is, for example, a rotary pump.

<Transportation room>
1, the transfer chamber 3 includes a transfer device 3a disposed inside the transfer chamber 3. The transfer device 3a is, for example, a transfer robot.
The transport device 3a has a rotating shaft, a drive source for rotating the rotating shaft, a robot arm attached to the rotating shaft, a robot hand formed on a part of the robot arm, and a vertical movement mechanism. The robot arm has a first moving rail and a second moving rail that cross each other, a first base that can move the second moving rail relative to the first moving rail, and a second base that can move the robot hand relative to the second moving rail. The transport device 3a can move the glass substrate 11, which is the object to be transported, between the chambers 2, 2A, 3, 4, and 4A.
In addition, the robot arm may be composed of a first active arm, a second active arm, a first driven arm, and a second driven arm that are mutually bendable.

<Film forming chamber>
The film formation chambers 4 and 4A have the same configuration. In the following, only the film formation chamber 4 will be described, and a description of the film formation chamber 4A will be omitted.
FIG. 2 is a schematic side view showing a part of the film formation chamber 4 in this embodiment.
1 and 2, the film formation chamber 4 includes a power source 4p, a gas atmosphere setting mechanism 4g, and a cathode unit 5. The power source 4p, the gas atmosphere setting mechanism 4g, and the cathode unit 5 are used to perform a film formation process on a glass substrate 11. The power source 4p, the gas atmosphere setting mechanism 4g, and the cathode unit 5 are an example of a "substrate processing section." The substrate processing section may be called a substrate processing mechanism or a film formation source.
The film forming chamber 4 is composed of a plasma chamber 4m and a platen chamber 4n.

<Power supply, gas atmosphere setting mechanism>
The power supply 4p is connected to a backing plate 6 of a cathode unit 5, which will be described later. The power supply 4p applies a negative sputtering voltage to the backing plate 6.
The gas atmosphere setting mechanism 4 g is configured to set the gas atmosphere inside the film formation chamber 4 .
The gas atmosphere setting mechanism 4g has a gas inlet part that introduces a processing gas into the film formation chamber 4, and a high vacuum exhaust part that reduces the pressure (high vacuum) of the internal space of the film formation chamber 4. The gas inlet part is connected to a gas supply source. The gas inlet part is, for example, a mass flow controller that adjusts the flow rate of the gas supplied from the gas supply source. The high vacuum exhaust part is, for example, a turbo molecular pump.

<Cathode unit>
The cathode unit 5 is provided upright inside the film formation chamber 4 .
The cathode unit 5 has a target 7 and a backing plate 6 that holds the target 7 .
The backing plate 6 functions as a cathode electrode. The backing plate 6 is erected in the film forming chamber 4 at a position farthest from a transfer port 4 a located between the transfer chamber 3 and the film forming chamber 4 .
A target 7 is fixed to the front side of the backing plate 6 so as to face the glass substrate 11 in a substantially parallel manner when the glass substrate 11 is processed. The backing plate 6 is an electrode for applying a sputtering voltage of a negative potential to the target 7.

A magnetron magnetic circuit for forming a predetermined magnetic field on the target 7 is installed on the rear side of the backing plate 6. The magnetron magnetic circuit is attached to a rocking mechanism. The rocking mechanism has a drive device that rocks the magnetron magnetic circuit. The drive device of the rocking mechanism is configured to be able to rock the magnetron magnetic circuit.

<Modification of Cathode Unit>
As a modified example of the cathode unit 5, multiple rotary cathodes may be applied to the film formation chamber 4. The multiple rotary cathodes may be configured such that multiple cylindrical cathodes are arranged in parallel and a target is provided on the outer circumferential surface of each cathode. Each of the multiple rotary cathodes may be rotatable about its cylindrical axis. The film formation chamber 4 may include a rocking mechanism that rocks the magnetron magnetic circuit approximately parallel to the glass substrate 11 relative to the multiple rotary cathodes when the glass substrate 11 is processed.

<Plasma chamber, platen chamber>
In the plasma chamber 4m, a target 7 and a backing plate 6 which constitute a cathode unit 5 are disposed. In the plasma chamber 4m, a film formation process is performed on a glass substrate 11. That is, the plasma chamber 4m is an example of a "processing chamber".
The platen chamber 4n is adjacent to the plasma chamber 4m in the X direction. The platen chamber 4n has a transfer port 4a. The transfer port 4a is an opening through which the glass substrate 11 passes when the glass substrate 11 is transferred in the X direction. The platen chamber 4n is adjacent to the transfer chamber 3 via the transfer port 4a. A gate valve is disposed at the transfer port 4a. By opening and closing the gate valve, the platen chamber 4n communicates with the transfer chamber 3, or the platen chamber 4n is isolated from the transfer chamber 3. The platen chamber 4n supports the glass substrate 11 during the film formation process in the plasma chamber 4m. In other words, the platen chamber 4n is an example of a "back chamber".

The plasma chamber 4m has an opening 40 that opens to the platen chamber 4n, and a connection end 41 that surrounds the opening 40. The connection end 41 is a portion that is connected to a connection end 43 of the platen chamber 4n.
The platen chamber 4n has an opening 42 that opens to the plasma chamber 4m, and a connection end 43 that surrounds the opening 42. The connection end 43 is a portion that is connected to the connection end 41 of the plasma chamber 4m.
The connection end 41 and the connection end 43 are connected to face each other. By connecting the connection end 41 and the connection end 43, the plasma chamber 4m and the platen chamber 4n are assembled to form the film formation chamber 4. Furthermore, by connecting the connection end 41 and the connection end 43, the opening 40 and the opening 42 are connected to each other. As a result, an internal space 44 is formed between the plasma chamber 4m and the platen chamber 4n. The internal space 44 is sealed by connecting the connection end 41 and the connection end 43.
In the sealed structure of the internal space 44, an O-ring is disposed on one of the connection ends 41 and 43, and a seal surface is formed on the other of the connection ends 41 and 43. The surface where the connection ends 41 and 43 are connected to each other is the docking surface 4d. The docking surface is an example of a "boundary position between the processing chamber and the rear chamber."

The plasma chamber 4m has a target 7 and a backing plate 6. The target 7 and the backing plate 6 face a mask 20 described later. The target 7 and the backing plate 6 provided in the plasma chamber 4m protrude from the docking surface 4d (connection end 41) toward the platen chamber 4n.
In other words, the target 7 and the backing plate 6 are not disposed inside the plasma chamber 4m.
In this embodiment, the shape of the docking surface 4d is substantially flat. The shape of the docking surface 4d is not limited to a flat surface. The shape of the docking surface 4d may be determined according to the shape of the opening 40 of the plasma chamber 4m and the shape of the opening 42 of the platen chamber 4n.

<Front space, rear space>
1 and 2, the internal space 44 of the film formation chamber 4 has a front space 45 and a back space 46 aligned in the X direction. The front space 45 is a space facing the surface on which the film is formed of the glass substrate 11 is exposed during film formation.
The front space 45 is formed by a combination of the internal space of the plasma chamber 4m and the internal space of the platen chamber 4n. That is, the front space 45 is formed by an opening 42 surrounded by a connection end 43 of the platen chamber 4n that is closer to the plasma chamber 4m than the mask 20 is, and an opening 40 surrounded by a connection end 41 of the plasma chamber 4m.
The rear space 46 is the main internal space of the platen chamber 4n. The rear space 46 is a space that faces the rear surface of the glass substrate 11 during film formation.
The front space 45 and the back space 46 form an internal space 44 in a sealed state of the film forming chamber 4 assembled with the plasma chamber 4m and the platen chamber 4n.

2, the position indicated by the reference symbol 4b is a boundary position between a front space 45 and a back space 46 in the film formation chamber 4. A mask 20 is disposed at the boundary position 4b. In the front space 45 of the film formation chamber 4, a backing plate 6 to which a target 7 is fixed is disposed.
A rotary support mechanism 10 that supports and rotates the glass substrate 11 loaded from the transfer opening 4a is disposed in the back space 46 of the film formation chamber 4. The rotary support mechanism 10 can be referred to as a platen mechanism.

In the X direction, the boundary position 4b between the front space 45 and the back space 46 in the deposition chamber 4 is closer to the position of the transfer port 4a than the position of the docking surface 4d where the connection end 41 of the plasma chamber 4m and the connection end 43 of the platen chamber 4n meet.

The plasma chamber 4m and the platen chamber 4n can be separated from each other in the X direction. When the plasma chamber 4m and the platen chamber 4n are separated, the mask 20 is disposed inside the platen chamber 4n, and the target 7 and the backing plate 6 are disposed inside the plasma chamber 4m.

<Masks>
The mask 20 is disposed inside the platen chamber 4n. Inside the platen chamber 4n, the position of the mask 20 is closer to the position of the transfer opening 4a than the position of the docking surface 4d. In other words, the mask 20 is disposed between the docking surface 4d and the glass substrate 11 that is in the film formation standing position. The mask 20 is erected so as to face the plasma chamber 4m.
The mask 20 has a substantially rectangular mask frame and a plurality of ribs attached to the mask frame so as to extend in the vertical and horizontal directions. The plurality of ribs define an inner region of the mask frame.
The mask frame is made of a rigid metal such as SUS. The ribs are made of metal foil such as Invar. The ribs are fixed to the mask frame with both ends of the ribs pulled by the mask frame. Inside the mask frame, the area surrounded by the multiple ribs stretched in the vertical and horizontal directions is the film formation area.

The mask 20 has a deposition opening 20b. The deposition opening 20b is an opening portion formed by a mask frame. The deposition opening 20b opens at a boundary position 4b between a front space 45 and a rear space 46.
The mask 20 has mask support parts 20g. The mask support parts 20g are provided at both ends of the mask frame in the Z direction and at both ends of the mask frame in the Y direction. The mask 20 is supported by the mask support parts 20g in the platen chamber 4n. At this time, the position of the mask 20 can be aligned by a mask alignment part (not shown) in a pre-deposition process.

<Rotation support mechanism, rotation shaft, substrate holder>
The rotary support mechanism 10 has a rotary shaft 12 and a substrate holding part 13. The rotary shaft 12 is rotatable around a rotation center. The substrate holding part 13 is attached to the rotary shaft 12. The substrate holding part 13 is, for example, a platen. When the substrate holding part 13 is in the horizontal transport position, the shape of the substrate holding part 13 is a substantially rectangular flat plate when viewed in the Z direction.
The substrate holding unit 13 can support the rear surface of the glass substrate 11 in the platen chamber 4n. The rotation support mechanism 10 can rotate the glass substrate 11 between a horizontal transport position and a film formation standing position while supporting the glass substrate 11 by the substrate holding unit 13.

A more specific explanation will now be given.
When the substrate holding unit 13 is in the horizontal transfer position, the substrate holding unit 13 supports the glass substrate 11 so as to face the X direction so that the glass substrate 11 can be moved horizontally through the transfer opening 4a. Specifically, when the rotary support mechanism 10 places the substrate holding unit 13 in the horizontal transfer position, the glass substrate 11 can be transferred from the transfer opening 4a into the film formation chamber 4, and the glass substrate 11 can be transferred from the transfer opening 4a to the outside of the film formation chamber 4. In other words, in the horizontal transfer position, the rotary support mechanism 10 maintains the support state in which it supports the glass substrate 11, and releases the support state.

When the substrate holding unit 13 holding the glass substrate 11 is in the film formation standing position, the substrate holding unit 13 supports the glass substrate 11 so that the glass substrate 11 faces the mask 20. In this state, the rotation support mechanism 10 holds (supports) the glass substrate 11 so that it faces the target 7 during film formation, and the film formation process is performed on the glass substrate 11.

Fig. 3 is a schematic side view showing the substrate holding part 13 in the rotary support mechanism 10 according to this embodiment. Fig. 3 shows a state in which the substrate holding part 13 is in a horizontal transfer position.
As shown in FIGS. 2 and 3, the rotary support mechanism 10 is located below in the rear space 46 inside the platen chamber 4n.
The rotation shaft 12 extends in the Y direction. The rotation shaft 12 is substantially parallel to at least one of the transfer opening 4a and the docking surface 4d.

<Rotation drive unit>
2, a rotation drive unit 12A is connected to the rotating shaft 12. The rotation drive unit 12A enables the rotating shaft 12 to rotate around its center of rotation. The rotation drive unit 12A has a rotation drive source such as a motor, and a rotation transmission unit such as a reducer that transmits the driving force of the rotation drive source to the rotating shaft 12.
The rotation shaft 12 passes through a side wall that forms the platen chamber 4n. The rotation shaft 12 passes through a side wall that forms a back space 46 of the platen chamber 4n. The position where the rotation shaft 12 passes through the side wall of the platen chamber 4n is sufficiently separated from the docking surface 4d.
The rotary drive unit 12A is disposed outside the film formation chamber 4. The rotary drive unit 12A is connected to both ends of the rotary shaft 12 in the Y direction. That is, the rotary drive unit 12A is connected to two locations, one end (first end) and the other end (second end) of the rotary shaft 12. The connection structure between the rotary drive unit 12A and the rotary shaft 12 will be specifically described below.

A moment load caused by the weight of the substrate holding portion 13 and the frame portion 14 acts on the rotating shaft 12. In particular, when the substrate holding portion 13 is disposed in the horizontal transport position, the moment load of the substrate holding portion 13 and the frame portion 14 acts largely on the rotating shaft 12.
For example, in the case where the rotation drive unit 12A that rotates the rotating shaft 12 is connected to only one end of the rotating shaft 12, a twisting deformation from one end of the rotating shaft 12 to the other end occurs in the rotating shaft 12 due to the moment load of the substrate holding unit 13 and the frame unit 14. Focusing on the position of the rotating shaft 12 where the displacement (deformation) amount around the rotating shaft 12 caused by the moment load occurs, the rotating shaft 12 deforms so that the displacement amount increases from the position of one end of the rotating shaft 12 to the position of the other end. Due to such twisting deformation in the rotating shaft 12, a misalignment occurs between the frame unit 14 connected to one end of the rotating shaft 12 and the frame unit 14 connected to the other end of the rotating shaft 12.

In contrast, in the connection structure between the rotation drive unit 12A and the rotating shaft 12 according to the present embodiment, the rotation drive unit 12A is connected to both ends of the rotating shaft 12. In this connection structure, the occurrence of torsional deformation in the rotating shaft 12 is suppressed compared to a structure in which the rotation drive unit 12A is connected to only one end of the rotating shaft 12. In other words, the amount of displacement (amount of deformation) around the rotating shaft 12 caused by the moment load is the same at one end of the rotating shaft 12 and the other end of the rotating shaft 12. As a result, no misalignment occurs between the frame part 14 connected to one end of the rotating shaft 12 and the frame part 14 connected to the other end of the rotating shaft 12.
Furthermore, in the connection structure according to this embodiment, the load applied to the rotating shaft 12 is distributed to two locations, one end and the other end of the rotating shaft 12. Therefore, the stress generated in the rotating shaft 12 can be reduced. With such a structure, it is possible to rotate a substrate holder 13 having a larger weight. For example, the connection structure according to this embodiment can be applied to a substrate processing apparatus that processes a larger glass substrate 11.

<Fastening structure between rotating shaft and substrate holder>
Fig. 4 is an enlarged view of a main part of the rotary support mechanism 10 according to the present embodiment, and is a cross-sectional view showing a fastening structure between the substrate holding part 13 and the rotary shaft 12. Fig. 5 is a schematic plan view showing the rotary support mechanism 10 according to the present embodiment. Note that Figs. 4 and 5 show a state in which the substrate holding part 13 is in a horizontal transfer position.
As shown in FIGS. 2 to 4, a substrate holder 13 is attached to the rotating shaft 12 via a base portion 12 a and a frame portion 14 .

The base portion 12 a and the frame portion 14 form a mounting structure for mounting the substrate holder 13 to the rotating shaft 12 .
With the substrate holding part 13 attached to the rotating shaft 12, the plane of the substrate holding part 13 in the XY direction and the axis of the rotating shaft 12 in the Y direction are slightly separated and do not coincide with each other. The substrate holding part 13 rotates following the rotation of the rotating shaft 12 about the rotation center. This enables the substrate holding part 13 to rotate the glass substrate 11 held by the substrate holding part 13 about the rotation center of the rotating shaft 12.

The rotary support mechanism 10 has a fastening structure for attaching the substrate holder 13 to the rotary shaft 12 .
3 to 5, the fastening structure includes a base portion 12a, a frame portion 14, and a plurality of bolts 15. The bolts 15 are an example of a "fastening member."

<Taibu>
The base portion 12a is provided integrally with the rotating shaft 12. The base portion 12a may be fixedly connected to the rotating shaft 12 by welding or the like. Alternatively, the base portion 12a may be formed integrally with the rotating shaft 12 by machining or the like. The base portion 12a is formed in a block shape having a diameter larger than that of the rotating shaft 12.
The base portion 12a has a first mounting plane 16a that abuts against a flange portion 14f described later. The first mounting plane 16a is a plane along the axial direction of the rotating shaft 12 that extends in the Y direction and along the X direction that is a tangent direction to the outer circumferential surface of the rotating shaft 12. A female thread portion that corresponds to the bolt 15 is formed on the base portion 12a. The female thread portion opens into the first mounting plane 16a.

<Frame section>
The frame portion 14 is formed integrally with the substrate holding portion 13. The frame portion 14 has a radial arm portion 14r and an axial arm portion 14a. The radial arm portion 14r extends in the X direction. In other words, the radial arm portion 14r extends in the radial direction of the rotating shaft 12. The axial arm portion 14a extends in the Y direction. In other words, the axial arm portion 14a extends in the axial direction of the rotating shaft 12.

The radial arm portion 14r and the axial arm portion 14a of the frame portion 14 form a rectangular frame body so as to correspond to the rectangular substrate holding portion 13 in a plan view. Two radial arm portions 14r are provided along both ends in the axial direction of the rectangular rotating shaft 12 of the substrate holding portion 13. For example, two axial arm portions 14a are provided so as to extend in the axial direction of the rotating shaft 12. A window portion 14b penetrating the frame portion 14 is formed in the radial arm portion 14r at the center of the frame portion 14 in the Z direction when viewed in the Y direction. By forming the window portion 14b, the weight of the rotation support mechanism 10 can be reduced. Furthermore, the weight of the portion of the rotation support mechanism 10 near the tip 13a located away from the rotating shaft 12 can be reduced.

<Flange>
The frame portion 14 has two flange portions 14f formed at both ends adjacent to the rotating shaft 12. The flange portions 14f are provided integrally with the board holding portion 13. Each of the two flange portions 14f is formed integrally with the radial arm portion 14r and the shaft arm portion 14a. The flange portions 14f are formed along the first mounting plane 16a. The flange portions 14f are provided on both sides of the radial arm portion 14r in the Y direction of the rotating shaft 12. Through holes corresponding to the bolts 15 are formed in the flange portions 14f.

The flange portion 14f has a second mounting plane 16b that abuts against the base portion 12a.
Each of the first mounting plane 16a and the second mounting plane 16b is formed to have a flat surface. The first mounting plane 16a and the second mounting plane 16b are formed in a substantially equal rectangular shape.

<Convex and concave parts>
Each of the first mounting plane 16a and the second mounting plane 16b is formed with a sliding prevention portion 17. Specifically, the sliding prevention portion 17 is a convex portion and a concave portion that engage with each other.
In this embodiment, a convex portion 17a is formed on the first mounting plane 16a, and a concave portion 17b is formed on the second mounting plane 16b as the anti-slip portion 17. The convex portion 17a is an example of a "first engaging portion." The concave portion 17b is an example of a "second engaging portion."

The protrusion 17a is formed at the lower end of the first mounting plane 16a in the Z direction. Here, the lower end refers to a position below the direction of gravity when the plane of the substrate holding part 13 is in the horizontal transport position in which the plane of the substrate holding part 13 is horizontal. The protrusion 17a is a protrusion that extends parallel to the axial direction of the rotating shaft 12.
Similarly, the recess 17b is formed at the lower end of the second mounting plane 16b in the Z direction. The recess 17b is a groove extending parallel to the axial direction of the rotating shaft 12 or a stepped portion.
With the first mounting flat surface 16a and the second mounting flat surface 16b in contact with each other, the protrusion 17a and the recess 17b are engaged with each other.

<Bolt>
The frame portion 14 and the rotating shaft 12 are fastened by a plurality of bolts 15. With the first mounting plane 16a and the second mounting plane 16b in contact with each other, the bolts 15 pass through the through holes of the flange portion 14f in a direction intersecting the first mounting plane 16a and the second mounting plane 16b, and are fastened to the base portion 12a. The board holding portion 13 is fastened to the rotating shaft 12 by the plurality of bolts 15.

The direction in which the bolts 15 are fastened, i.e., the direction in which the bolts 15 are inserted into the through holes of the flange portion 14f and the direction in which the bolts 15 are screwed into the female threads, is preferably a direction (X direction) perpendicular to the first mounting plane 16a and the second mounting plane 16b. When the multiple bolts 15 are in a horizontal transport position where the plane of the board holding portion 13 is horizontal, they are arranged so as to be aligned in the Z direction. Two adjacent bolts 15 among the multiple bolts 15 are spaced apart. By fastening the multiple bolts 15, the flange portion 14f is pressed against the base portion 12a, and the flange portion 14f and the base portion 12a are fastened together. The directions of the multiple bolts 15 screwed into the female threads of the base portion 12a are parallel to each other.

<Non-contact stop part>
The rotation support mechanism 10 has a non-contact stop part 10mg. The non-contact stop part 10mg is configured to stop the substrate holding part 13 at the film formation standing position during rotation driving that rotates the substrate holding part 13 from the horizontal transport position to the film formation standing position. In other words, the non-contact stop part 10mg has a function of stopping the movement of the substrate holding part 13 that has rotated from the horizontal transport position to the film formation standing position at the film formation standing position. The non-contact stop part 10mg is provided at the tip 13a of the substrate holding part 13.

The non-contact stop portion 10mg is also arranged on the upper part of the mask 20 to correspond to the substrate holding portion 13 in the film formation standing position. In other words, the non-contact stop portion 10mg arranged on the tip 13a of the substrate holding portion 13 is the first non-contact stop portion. The non-contact stop portion 10mg arranged on the upper part of the mask 20 is the second non-contact stop portion. The first non-contact stop portion and the second non-contact stop portion are, for example, magnets that repel each other. The first non-contact stop portion and the second non-contact stop portion face each other. The polarities of the magnets constituting the first non-contact stop portion and the second non-contact stop portion are the same.

Alternatively, the non-contact stop portion 10mg may be configured, for example, by magnets having mutually attracting polarities. In this case, a first non-contact stop portion is disposed at the tip 13a of the substrate holding portion 13. A second non-contact stop portion is disposed outside the rotation range of the substrate holding portion 13 in an area near the top of the mask 20. The polarity of the magnet constituting the first non-contact stop portion is different from the polarity of the magnet constituting the second non-contact stop portion. Therefore, when the substrate holding portion 13 is in the film formation standing position, the first non-contact stop portion disposed at the tip 13a of the substrate holding portion 13 is attracted to the second non-contact stop portion disposed outside the rotation range of the substrate holding portion 13.

<Horizontal transport position, film formation standing position>
2, the substrate holding unit 13 can be rotated by being rotated around the center of rotation of the rotation shaft 12 by the rotation drive unit 12A. A rotatable range of the substrate holding unit 13 is set so that the substrate holding unit 13 can rotate between a horizontal transport position and a film formation standing position. In FIG. 2, this rotatable range Rr is indicated by an arc-shaped dashed line.

The horizontal transfer position (lying position) is a position where the substrate holding part 13 is maintained horizontal so that the glass substrate 11 can move between the platen chamber 4n and the outside of the film formation chamber 4 when the glass substrate 11 is moved to the film formation chamber 4. In the horizontal transfer position, the substrate holding part 13 is disposed at a horizontal placement position that is slightly above the rotation shaft 12 and approximately horizontal.

The film formation standing position (standing position) is a position where the substrate holding part 13 stands along the mask 20 so that the glass substrate 11 faces the mask 20 when the surface treatment is performed on the glass substrate 11 supported inside the rear chamber 4n. In the film formation standing position, the substrate holding part 13 is located directly above the rotation shaft 12. Here, in such a film formation standing position, that is, when the substrate holding part 13 is located directly above the rotation shaft 12, the center of gravity Gv of the substrate holding part 13 does not exceed the straight line RL extending vertically upward from the axis 12r of the rotation shaft 12. In other words, in the X direction, the center of gravity Gv of the substrate holding part 13 is not located between the straight line RL and the plasma chamber 4m. That is, in the rotational drive of the substrate holding part 13 from the horizontal transport position toward the film formation standing position, the position of the center of gravity Gv of the substrate holding part 13 at the film formation standing position does not exceed the straight line RL. In other words, the position of the center of gravity Gv may be on the line RL, or may be in front of the line RL in the direction of rotation. The line RL is an example of a "position directly above the axis of rotation in the vertical direction."

In addition, in the film formation standing position, the center of gravity Gv of the substrate holding part 13 may be located slightly closer to the center of gravity Gh of the substrate holding part 13 in the horizontal transport position than on the straight line RL extending vertically upward from the axis of the rotation shaft 12.
The center of gravity Gv of the substrate holding part 13 in the film formation standing position and the center of gravity Gh of the substrate holding part 13 in the horizontal transfer position are taken into consideration when the substrate holding part 13 holds the glass substrate 11. The rotatable range is set based on this center of gravity. The centers of gravity Gv and Gh are on the same side of a straight line RL that extends vertically from the rotation shaft 12. In other words, the centers of gravity Gv and Gh are located between the straight line RL and the transfer opening 4a. A perpendicular line drawn from the center of gravity Gv intersects with a line segment that connects the center of gravity Gv and the axis 12r.

When the substrate holder 13 of the rotary support mechanism 10 is in the horizontal placement position, the transfer port 4a is located at the extension of the surface of the substrate holder 13. In this state, the glass substrate 11 transferred horizontally from the transfer chamber 3 can be placed on the rotary support mechanism 10.

On the other hand, in the rotating support mechanism 10, when the substrate holding part 13 is in the vertical processing position, the front side of the substrate holding part 13 can support the glass substrate 11 from the rear surface of the glass substrate 11, as shown in FIG. 2. The front side of the substrate holding part 13 has a larger contour than the glass substrate 11. When the substrate holding part 13 is in the vertical processing position (film formation standing position), the front side of the substrate holding part 13 is positioned so as to substantially block the boundary position 4b. In this state, the front surface 11T (see FIG. 8) of the glass substrate 11 supported by the substrate holding part 13 faces the backing plate 6, and film formation is possible on the front surface 11T of the glass substrate 11.

The substrate holding unit 13 is provided with a plurality of support pins that contact the rear surface of the glass substrate 11 to support the glass substrate 11 when the substrate holding unit 13 is rotated to the horizontal transport position. The support pins can press the glass substrate 11 against the mask 20 while the substrate holding unit 13 is rotated from the horizontal transport position to the film formation standing position (vertical processing position) and when the substrate holding unit 13 is in the film formation standing position (vertical processing position). The plurality of support pins are disposed at a plurality of locations on the surface of the substrate holding unit 13 so as to face the rear surface of the glass substrate 11. The pressing force of the support pins acting on the rear surface of the glass substrate 11 can be adjusted. The tip of the support pin has a contact portion formed in a hemispherical shape from resin.

The substrate holding unit 13 is provided with multiple clamps. The clamps support the glass substrate 11 by contacting the peripheral end face of the glass substrate 11 in the rotation range of the substrate holding unit 13 from the horizontal transport position to the film formation standing position (vertical processing position). In the substrate holding unit 13, multiple clamps are arranged at positions that form the peripheral edge of the glass substrate 11 placed on the upper surface of the substrate holding unit 13. Multiple clamps are provided at positions that form the outer side of the peripheral edge of the substrate holding unit 13. The clamps align the glass substrate 11 by contacting the peripheral end face of the glass substrate 11 when the glass substrate 11 is placed on the support pins.

Each of the multiple clamps can be swung by a clamp drive movement device (not shown) between an outer position that is outward from the center of the substrate holding part 13 and a support position that is inward from the center of the substrate holding part 13. When the clamps come into contact with the peripheral edge face of the glass substrate 11, they prevent the glass substrate 11 from moving away from the substrate holding part 13. The clamps swung between the outer position and the support position relative to the substrate holding part 13, allowing the glass substrate 11 to be placed on the substrate holding part 13 and removed from the substrate holding part 13.

The support pins support the weight of the glass substrate 11 by contacting the rear surface of the glass substrate 11 while applying an elastic force in a direction perpendicular to the surface of the glass substrate 11. In contrast, the clamps support the weight of the glass substrate 11 by contacting the edge surface of the glass substrate 11 while applying an elastic force in a direction parallel to the surface of the glass substrate 11.

The rotary support mechanism 10 has lift pins 50 and a lift pin moving device (not shown) that moves the lift pins 50 up and down. The lift pins 50 are provided on the substrate holding part 13. The lift pins 50 extend in the vertical direction. A plurality of lift pins 50 are arranged at approximately equal intervals along the upper surface of the substrate holding part 13. When the glass substrate 11 is loaded into the film forming chamber 4 (4A) or unloaded from the film forming chamber 4 (4A), the lift pins 50 protrude upward from the substrate holding part 13 that is positioned at the horizontal transport position, and support the glass substrate 11 that is positioned above the substrate holding part 13.

The lift pins 50 are located above the substrate holding part 13 in the horizontal transport position, with their tips abutting against the back surface of the glass substrate 11 to support it, and move vertically downward to place the glass substrate 11 on the substrate holding part 13. In the raised position, the tips of the lift pins 50 are located above the surface of the substrate holding part 13, and in the lowered position, they are in a position that does not interfere with the rotational movement of the substrate holding part 13. The lift pins 50 may be provided on the substrate holding part 13 or on the bottom of the platen chamber 4n.

The lift pin moving device is a drive device such as a drive motor arranged outside the film formation chamber 4, 4A. The lift pin moving device has a configuration in which the lift pin 50 is extended or retracted by the drive device. The lift pin 50 can be driven by the drive device while maintaining the chamber 4 sealed. With this configuration, when the glass substrate 11 is carried in or out of the film formation chamber 4, 4A, it is possible to freely transfer the glass substrate 11 between the substrate holding unit 13 and the robot hand of the transport device 3a.

<Film formation method>
Next, a method for forming a film in the substrate processing apparatus 1 according to this embodiment will be described.
In the following description, of the two film formation chambers 4 and 4A, a substrate process in which a film is formed on a glass substrate 11 held by a rotary support mechanism 10 in the film formation chamber 4 will be described. Note that the structure for rotating the glass substrate 11 so that the glass substrate 11 faces the mask 20 is the same in the film formation chambers 4 and 4A, and therefore a description of the film formation chamber 4A will be omitted.

First, the glass substrate 11 is carried into the substrate processing apparatus 1 from the outside. The inside of the substrate processing apparatus 1 is maintained in a vacuum atmosphere (see FIG. 1). The glass substrate 11 carried into the substrate processing apparatus 1 is first placed on a positioning member inside the load/unload chamber 2. This aligns the glass substrate 11 to a predetermined position on the positioning member.

Next, in the transfer chamber 3, the transfer device 3a operates and the robot hand of the transfer device 3a is inserted into the load/unload chamber 2. In the load/unload chamber 2, the glass substrate 11 placed on the positioning member is supported by the robot hand of the transfer device 3a. The glass substrate 11 is removed from the load/unload chamber 2 by the transfer device 3a. The glass substrate 11 is then transferred by the transfer device 3a via the transfer chamber 3 to the film formation chamber 4.

6 to 8 are schematic side views showing the steps performed in the film formation chamber 4 in this embodiment. Note that the configurations described in the above-mentioned embodiments may be omitted in these figures.
First, in the film formation chamber 4, as shown in Fig. 6, the rotary drive unit 12A rotates the rotary shaft 12 in the rotary support mechanism 10. This places the substrate holding unit 13 in the horizontal transfer position. Then, the transfer opening 4a of the film formation chamber 4 opens. The lift pin moving device moves the lift pins 50 to a standby position in which they protrude from the surface of the substrate holding unit 13. At the same time, the clamp opens outward along the contour of the substrate holding unit 13 and is retracted from its position above the substrate holding unit 13.

In this state, the glass substrate 11 is transported through the transport port 4a to the deposition chamber 4 by the robot hand of the transport device 3a, as shown by arrow A in FIG. 6. The glass substrate 11 is transported to the back space 46 inside the platen chamber 4n by the robot hand of the transport device 3a. The robot hand of the transport device 3a supports the glass substrate 11 above the substrate holder 13 of the rotation support mechanism 10 in the back space 46.

First, the robot hand of the transport device 3a supports the glass substrate 11 in a state approximately parallel to the substrate holding portion 13. In this state, the robot hand of the transport device 3a inserts the glass substrate 11 from the side in a direction parallel to the surface of the substrate holding portion 13 toward the inner space of the film formation chamber 4, as shown by arrow A in FIG. 6, until the glass substrate 11 reaches a position above the multiple lift pins 50 protruding from the substrate holding portion 13.

The robot hand of the transport device 3a then descends in the direction indicated by arrow B in FIG. 6 so as to approach the substrate holder 13. As a result, the glass substrate 11 is aligned at a predetermined position within the surface of the substrate holder 13, and the glass substrate 11 is placed on the lift pins 50 of the substrate holder 13. The glass substrate 11 is transferred from the transport device 3a to the lift pins 50. Next, the arm of the transport device 3a retreats from the film formation chamber 4 to the transport chamber 3, and the transport port 4a of the film formation chamber 4 is closed. The film formation chamber 4 is depressurized to a vacuum state by the high vacuum exhaust unit of the gas atmosphere setting mechanism 4g.

Then, the lift pin moving device lowers the lift pins 50 in the direction indicated by the arrow B in Fig. 6. By storing the lift pins 50 below the substrate holding part 13, the glass substrate 11 is placed on the substrate holding part 13 as shown in Fig. 7.
At this time, in the substrate holding portion 13 , the contact portions located at the tips of the support pins contact the rear surface 11 B of the glass substrate 11 to support the glass substrate 11 .

The clamp drive movement device then drives the clamps to swing to a support position close to the substrate holding unit 13, and the peripheral edge surface of the glass substrate 11 comes into contact with the clamps. In this state, the clamps align the glass substrate 11 to the film formation processing position. The clamps engage the peripheral edge of the glass substrate 11. This causes the glass substrate 11 to be held by the rotation support mechanism 10. At this time, the weight of the glass substrate 11 is supported by support pins provided on the substrate holding unit 13.

When the substrate holder 13 is in the horizontal transport position and supports the glass substrate 11, the center of gravity Gh of the rotary support mechanism 10 is located between the rotary shaft 12 and the tip 13a, as shown in FIG. 7. In other words, the center of gravity Gh is located to the left of the rotary shaft 12 in the X direction, as shown in FIG. 2 and FIG. 7.

Next, the rotating shaft 12 is rotated by the rotation drive unit 12A. As a result, as shown by arrow C in Figures 7 and 8, the substrate holding unit 13 attached via the base unit 12a and the frame unit 14 rotates around the center of rotation of the rotating shaft 12. As a result, the substrate holding unit 13 rotates and stands up to reach the film formation standing position. During the rotation operation, the glass substrate 11 is kept in contact with the support pins and clamps and held by the substrate holding unit 13.

When the substrate holder 13 reaches the film formation standing position, the rotation drive unit 12A controls the rotation shaft 12 to stop the rotation.
At this time, when the substrate holding part 13 approaches the film formation standing position, a magnetic force is generated between the magnet of the non-contact stop part 10mg provided at the tip 13a and the magnet of the non-contact stop part 10mg near the upper part of the mask 20. The magnetic force generated by the magnets slows down the rotation of the substrate holding part 13, and stops the rotational movement of the substrate holding part 13 so that the substrate holding part 13 does not come into contact with the mask 20.

When the substrate holding part 13 reaches the film formation standing position, the film formation opening 20b is almost completely blocked by the glass substrate 11 and the substrate holding part 13. In the film formation standing position, the tip 13a is slightly closer to the transport opening 4a in the horizontal direction than the rotation shaft 12. In other words, the substrate holding part 13 is not exactly in a position that faces vertically upward from the rotation shaft 12, but is tilted so that the surface 11T of the glass substrate 11 faces slightly upward. The angle of inclination at this time is called the tilt angle.

In a state in which the substrate holding part 13 in the film-forming standing position supports the glass substrate 11, the center of gravity Gv in the X direction of the rotary support mechanism 10 is closer to the position of the tip 13a in the X direction than the position of the rotary shaft 12 in the X direction, as shown in Fig. 8. In other words, the center of gravity Gv is slightly to the left of the rotary shaft 12 in the X direction in Figs. 2 and 8.
2 and 8, the center of gravity Gv is located slightly to the left of a straight line RL that passes through the center of rotation of the rotating shaft 12 in the vertical direction. The range of movement from the center of gravity Gh to the center of gravity Gv accompanying the rotational operation does not cross the straight line RL that extends from the center of rotation of the rotating shaft 12 in the Z direction.

In this way, the center of gravity Gh at the horizontal transport position and the center of gravity Gv at the film formation standing position are located on the same side in the X direction with respect to the straight line RL. Specifically, in FIG. 8, the centers of gravity Gh and Gv are located on the left side of the straight line RL. In other words, the centers of gravity Gh and Gv are not located on the right side of the straight line RL. For this reason, the magnitude of the moment load (moment) applied from the substrate holding unit 13 to the rotating shaft 12 changes with the rotational operation, but the direction in which the moment load applied to the rotating shaft 12 acts is never reversed.

In other words, the moment acting on the rotating shaft 12 is expressed as the product of the "center of gravity of the substrate holding part 13" and the "distance between the rotating shaft 12 and the substrate holding part 13." This moment acts in the counterclockwise direction when the substrate holding part 13 rotates in the direction of the arrow C shown in Figure 8.
In the direction of rotation, the center of gravity Gv does not pass beyond the straight line RL, so no moment acts in the clockwise direction.

Therefore, even when the rotation shaft 12 reaches the film formation standing position at the end of the rotation operation, the moment maintains the same direction as the moment from the horizontal transport position at the start of the rotation operation throughout the rotation operation. Therefore, even if the minute gaps between the components that make up the rotation support mechanism 10 widen, the direction of the acting moment due to the movement of the center of gravity of the substrate holding unit 13 does not change, so no impact is generated due to the minute gaps between the components narrowing. As a result, even if the center of gravity of the substrate holding unit 13 shifts due to the rotation of the rotation shaft 12, the rotation support mechanism 10 can suppress the occurrence of displacement and impact between the components.

At substantially the same time that the substrate holder 13 reaches the film formation standing position, the glass substrate 11 approaches the mask 20, as shown in Fig. 8. The glass substrate 11 approaches the boundary position 4b between the front space 45 and the back space 46 inside the platen chamber 4n.
In this state, the mask alignment unit aligns the mask 20. The mask alignment unit aligns the in-plane position of the mask 20 and the glass substrate 11. Specifically, an imaging device (not shown) detects the relative in-plane positions of the mask 20 and the glass substrate 11. Based on the detection result, the mask alignment unit drives the mask 20 to align the contours of the mask 20 and the glass substrate 11.

After the alignment of the position within the surface of the mask 20 is completed, the mask alignment unit similarly moves the mask 20 in a direction perpendicular to the surface of the mask 20. This brings the mask 20 into contact with the glass substrate 11. At this time, the substrate holding unit 13, which is in the film formation standing position (vertical processing position, film formation standing position), does not move from the vertical processing position. In order to bring the mask 20 closer to the glass substrate 11, the mask 20 is driven so that the mask 20 moves in a direction approaching the glass substrate 11. This brings the mask 20 into contact with the glass substrate 11.

At this time, no pressing force other than that for supporting the weight of the glass substrate 11 is acting on the glass substrate 11 from the support pins.
Furthermore, even after the mask 20 comes into contact with the glass substrate 11, the mask 20 is kept in close contact with the glass substrate 11. For this purpose, the mask 20 is driven so that the mask 20 and the glass substrate 11 are brought even closer to each other in a direction perpendicular to the surface of the mask 20. At this time, the substrate holding portion 13 in the film formation standing position is not driven.
As the mask 20 moves, the glass substrate 11 in contact with the mask 20 is pressed by the mask 20. As a result, the support pins and the clamps are pressed through the glass substrate 11.

In this way, the substrate holder 13 is rotated to the film-forming standing position, bringing the glass substrate 11 and the mask 20 into close contact with each other. At the same time, inside the platen chamber 4n, the boundary position 4b between the front space 45 and the back space 46 is blocked. At the boundary position 4b, the glass substrate 11 is exposed toward the front space 45 from the film-forming opening 20b, which is an opening formed by the mask frame 20a. The glass substrate 11 is positioned opposite the backing plate 6. In the direction facing the glass substrate 11, the backing plate 6 is surrounded by the wall of the platen chamber 4n.

When the substrate holding unit 13 is placed in the film-forming standing position, the glass substrate 11 held by the rotation support mechanism 10 is in close contact with the mask 20. When the substrate holding unit 13 is placed in the film-forming standing position, the glass substrate 11 is held in a state in which the surface 11T of the glass substrate 11 and the surface of the backing plate 6 are approximately parallel. In this state, the film-forming process is carried out in the front space 45 in the film-forming chamber 4, and a film is formed on the surface 11T of the glass substrate 11.

In the film formation process, sputtering gas and reactive gas are supplied to the front space 45 of the film formation chamber 4 from the gas inlet of the gas atmosphere setting mechanism 4g. In the film formation process, a sputtering voltage is applied to the backing plate 6 from the external power source 4p. In addition, in the film formation process, a predetermined magnetic field is formed on the target 7 by the magnetron magnetic circuit. At the same time, the necessary rocking or rotating motion is performed in the backing plate 6 or the magnetron magnetic circuit.

As a result, the ions of the sputtering gas are excited by the plasma generated in the front space 45 of the film formation chamber 4. The ions of the sputtering gas collide with the target 7 on the backing plate 6, ejecting particles of the film formation material. The particles of the film formation material ejected from the target 7 combine with the reactive gas, and the combined particles of the film formation material and reactive gas adhere to the glass substrate 11. As a result, a specified film is formed on the surface 11T of the glass substrate 11.

After the film formation process is completed, the mask alignment unit moves the mask 20 so as to be separated from the surface 11T of the glass substrate 11 in a direction perpendicular to the surface of the mask 20. In this way, the mask 20 is separated from the glass substrate 11.
Next, the rotary drive unit 12A rotates the rotary shaft 12. The substrate holding unit 13 rotates around the center of rotation of the rotary shaft 12 in the direction opposite to the direction of arrow C in Fig. 8 and Fig. 7 from the film formation standing position toward the horizontal transfer position. During the rotation operation, the substrate holding unit 13 maintains a state in which it holds the glass substrate 11 after film formation is completed.
During the rotation from the film formation standing position to the horizontal transport position, the movement range from the center of gravity Gv to the center of gravity Gh accompanying this rotation does not cross the rotation center of the rotation shaft 12 in the X direction.

Therefore, even if the rotation shaft 12 starts moving from the film-forming standing position at the start of the rotation operation, the direction of the moment applied thereto remains the same as the moment at the film-forming standing position throughout the rotation operation to the horizontal transport position at the end of the rotation operation. For this reason, even if the minute gaps between the components that make up the rotation support mechanism 10 widen, the direction of the acting moment due to the movement of the center of gravity of the substrate holding unit 13 does not change, so no impact is generated due to the minute gaps between the components narrowing. As a result, even if the center of gravity of the substrate holding unit 13 shifts due to the rotation of the rotation shaft 12, the rotation support mechanism 10 can suppress the occurrence of displacement and impact between the components.

By rotating the rotating shaft 12, the substrate holding part 13 rotates and reaches the horizontal transport position. After reaching the horizontal transport position, the clamp is swung from the support position to the outer position to move the clamp away from the periphery of the glass substrate 11, and the clamp releases the glass substrate 11 from its engagement.

Then, the lift pins 50 are raised by the lift pin moving device, causing the lift pins 50 to protrude from the surface of the substrate holding part 13. With the glass substrate 11 supported by the raised lift pins 50, the robot hand of the transport device 3a is inserted between the glass substrate 11 and the substrate holding part 13. The robot hand of the transport device 3a raises the glass substrate 11 from the substrate holding part 13 in the direction opposite to the arrow B in FIG. 6. The transport device 3a moves in the direction opposite to the arrow A in FIG. 6. The glass substrate 11 is removed from the film formation chamber 4 through the transport port 4a.

Finally, the glass substrate 11 on which the film formation process has been completed is transported from the load/unload chamber 2 to the outside of the substrate processing apparatus 1 via the transport chamber 3. It is also possible to subject the glass substrate 11 to other processes in other chambers.
This completes the film formation process in the substrate processing apparatus 1 .

<Maintenance method>
Next, a maintenance method for the substrate processing apparatus 1 according to this embodiment will be described.
9 and 10 are schematic side views showing the maintenance steps carried out in the film formation chamber 4 in this embodiment.
In the following description, of the two film formation chambers 4 and 4A, a maintenance method will be described for the film formation chamber 4. Since the maintenance method is the same for the film formation chambers 4 and 4A, a description of the film formation chamber 4A will be omitted.

When performing maintenance on the substrate processing apparatus 1, the substrate holding portion 13 of the rotary support mechanism 10 is placed in the horizontal transfer position in the film formation chamber 4. During maintenance, the glass substrate 11 is not carried into the substrate processing apparatus 1.
Next, after the internal pressure of the film formation chamber 4 is set to atmospheric pressure, the film formation chamber 4 is disassembled into the plasma chamber 4m and the platen chamber 4n from the docking surface 4d. Then, the plasma chamber 4m and the platen chamber 4n are separated from each other in the direction shown by the arrow D in Fig. 9. As a result, the connection end 41 of the plasma chamber 4m, which forms the docking surface 4d, and the connection end 43 of the platen chamber 4n are separated from each other.

At this time, the plasma chamber 4m is moved by the moving mechanism 4mt from the position where it was assembled with the platen chamber 4n on the docking surface 4d to a position required for maintenance. The moving mechanism 4mt is a known mechanism, and may include a movement position regulating rail, a drive source, drive wheels, a moving cart, etc.
9, the backing plate 6 protrudes from a connection end 41 that forms the docking surface 4d of the plasma chamber 4m toward the platen chamber 4n. The connection end 41 of the plasma chamber 4m does not protrude so as to cover the upper part of the backing plate 6. In other words, the backing plate 6 is exposed to the space above the plasma chamber 4m.

Next, when a sufficient separation distance is obtained between the plasma chamber 4m and the platen chamber 4n, the cathode unit 5 including the backing plate 6 functioning as a substrate processing section is removed from the plasma chamber 4m.
At this time, a lifting mechanism such as a crane can be used in the space above the plasma chamber 4m. Specifically, the lifting mechanism is brought close to the upper part of the plasma chamber 4m, and the cathode unit 5 having the backing plate 6 and the target 7 is attached to the lifting mechanism. In this state, the lifting mechanism lifts the cathode unit 5 upward in the direction shown by the arrow E in Fig. 10. In this state, the cathode unit 5 fixed to the plasma chamber 4m is removed, and the cathode unit 5 is moved upward as shown by the arrow E in Fig. 10. Thereafter, the cathode unit 5 is subjected to predetermined maintenance such as cleaning.
Furthermore, when replacing the cathode unit 5, a new cathode unit 5 suspended by a crane is lowered in the opposite direction to the arrow E in Fig. 10. The new cathode unit 5 is fixed at a predetermined position in the plasma chamber 4m.

When a sufficient separation distance is obtained between the plasma chamber 4m and the platen chamber 4n, the mask 20 is removed from the platen chamber 4n.
At this time, similarly to the case of the cathode unit 5 described above, a lifting mechanism such as a crane is used to move the mask 20 in the direction shown by the arrow F in Fig. 10. At this time, the mask 20 fixed to the platen chamber 4n is removed from the mask support portion 20g, and then the mask 20 is moved in the direction shown by the arrow F in Fig. 10. Thereafter, the mask 20 is subjected to predetermined maintenance such as cleaning.
Furthermore, when replacing the mask 20, a new mask 20 suspended by a crane is moved in the direction opposite to the arrow F in Fig. 10. In the platen chamber 4n, the mask 20 is fixed at a predetermined position on the mask support portion 20g.

In this way, the boundary position 4b between the front space 45 and the back space 46 is located inside the platen chamber 4n, rather than the docking surface 4d where the plasma chamber 4m and the platen chamber 4n are assembled. This improves work efficiency and shortens work time when removing the cathode unit 5 from the plasma chamber 4m.

According to the substrate processing apparatus 1 of this embodiment, in the substrate holding unit 13 that can rotate between the horizontal transport position and the film formation standing position, the movement range between the center of gravity Gh and center of gravity Gv of the substrate holding unit 13 accompanying the rotational operation does not cross the straight line RL extending vertically from the rotation shaft 12. Therefore, even if the substrate holding unit 13 reaches the film formation standing position, which is the end point of the rotational operation, or even if the substrate holding unit 13 is between the horizontal transport position and the film formation standing position during the rotational operation, the direction of the moment acting on the rotation shaft 12 is the same. That is, in FIG. 6 to FIG. 8, the direction of the moment acting on the rotation shaft 12 is counterclockwise. In other words, the moment acting on the rotation shaft 12 is not reversed. That is, the direction of the moment acting on the rotation shaft 12 is not clockwise.

This makes it possible to suppress displacement and impact between the components that make up the rotary support mechanism 10, even if the center of gravity of the substrate holding part 13 moves due to the rotation of the rotating shaft 12. Therefore, even if the substrate holding part 13 is rotated while a large substrate having a side length exceeding 1800 mm is supported by the substrate holding part 13, it is possible to suppress the occurrence of excessive impact, and the following effects can be obtained.
The fluctuation of the load acting on the substrate holder 13 can be suppressed.
The occurrence of backlash in the drive gear that constitutes the reducer that applies a rotational force to the rotating shaft 12 can be suppressed.
The occurrence of twisting of the rotating shaft 12 can be suppressed.
Deformation such as bending of the substrate holder can be suppressed.
Fluctuations in the clearance between the components of the rotary support mechanism 10 can be suppressed.
The occurrence of misalignment between the components of the rotation support mechanism 10 can be suppressed.
It is possible to prevent the substrate holder 13 from moving across the straight line RL that extends vertically from the rotation shaft 12 .

Therefore, it is possible to suppress fluctuations in the distance between the backing plate 6 and the surface 11T of the glass substrate 11 when the substrate holding part 13 is placed in the film formation standing position. It is also possible to suppress fluctuations in the distance between the substrate holding part 13 and the mask 20, making it possible to suppress intrusion of processing gas into the back space 46 from the film formation port 20b. At the same time, in plasma processing that requires setting a predetermined potential, such as a floating potential, the glass substrate 11, the mask 20, etc. do not come into contact with each other inadvertently and become conductive, and the electrical state does not change. This makes it possible to suppress fluctuations in film formation conditions and improve processing characteristics such as the film formation thickness.

According to this embodiment, when forming a film on a glass substrate 11 by sputtering, the rotating support mechanism 10 prevents the glass substrate 11 being processed from being damaged by cracks, chips, etc., caused by the rotating action of the substrate holder 13. At the same time, the rotating support mechanism 10 properly maintains the distance between the mask 20 and the glass substrate 11, maintaining the potential state required for sputtering and preventing deterioration of the film formation characteristics. At the same time, by suppressing the generation of particles, deterioration of the film formation characteristics can be prevented.

<Modification>
The surface treatment performed in the substrate processing apparatus 1 according to the embodiment described above is the sputtering treatment, but the surface treatment is not limited to the sputtering treatment. A deposition treatment may be performed instead of the sputtering treatment. In this case, the substrate processing unit described above has a deposition source. The deposition treatment is performed in the plasma chamber 4m described above.

While preferred embodiments and variants of the present invention have been described and illustrated above, it should be understood that these are illustrative of the present invention and should not be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the scope of the present invention. Thus, the present invention should not be considered as limited by the foregoing description.

1...substrate processing apparatus (sputtering apparatus, film formation apparatus), 2...loading and unloading chamber (chamber), 2A...loading and unloading chamber (chamber), 3...transfer chamber (transfer chamber, chamber), 3a...transportation apparatus, 4...film formation chamber (chamber), 4a...transfer port, 4A...film formation chamber (chamber), 4b...boundary position, 4d...docking surface, 4g...gas atmosphere setting mechanism, 4m...plasma chamber (processing chamber), 4mt...movement mechanism, 4n...platen chamber (rear chamber), 4p...power supply, 5...cathode unit (substrate processing apparatus), 6...backing plate (cathode electrode), 7...target, 10...rotating support mechanism (platen mechanism), 10mg...non-contact stop part, 11...glass substrate (Substrate), 11B...backside, 11T...frontside, 12...rotating shaft, 12a...base, 12A...rotating drive, 12r...axis, 13...substrate holder (platen), 13a...tip, 14...frame, 14a...shaft arm, 14b...window, 14f...flange, 14r...diameter arm, 15...bolt (fastening member), 16a...first mounting plane, 16b...second mounting plane, 17...anti-slip portion, 17a...protruding portion (first engaging portion), 17b...recessed portion (second engaging portion), 20...mask, 20a...mask frame, 20b...film deposition port, 20g...mask support, 40, 42...opening, 41, 43...connecting end, 44...internal space, 45...front space, 46...rear space, 50...lift pin, Rr...rotatable range

Claims (7)

An apparatus for processing a substrate, comprising:
a film formation chamber including a processing chamber having a substrate processing section for performing a surface treatment on the substrate, and a back chamber adjacent to the processing chamber and for supporting the substrate during the surface treatment in the processing chamber;
a mask disposed in the rear chamber, standing to face the processing chamber, and having a film formation port;
a rotation support mechanism including a rotation shaft rotatable about a rotation center and a substrate holder attached to the rotation shaft and capable of supporting the substrate within the rear chamber, the rotation support mechanism rotating the substrate holder supporting the substrate between a horizontal transport position and a film formation standing position;
Equipped with
the rear chamber has a transport port through which the substrate passes in a transport direction of the substrate,
The internal space of the film formation chamber has a front space and a back space,
the front space is a space in which a film-forming surface of the substrate is exposed through the film-forming opening of the mask during the surface treatment;
the back space is a space facing the back surface of the substrate during the surface treatment,
a boundary position between the front space and the rear space is disposed at a position closer to the transfer opening in the transfer direction than a boundary position between the processing chamber and the rear chamber;
At the horizontal transport position of the substrate, the substrate holding portion supports the substrate so as to face in the horizontal direction so as to be capable of moving the substrate in the horizontal direction through the transport opening;
When the substrate is in the film formation standing position, the substrate holder supports the substrate so that the substrate faces the mask when performing the surface treatment on the substrate;
in a rotation direction of the substrate holding part from the horizontal transport position toward the deposition standing position, a position of a center of gravity of the substrate holding part at the deposition standing position does not exceed a position directly above the rotation axis in a vertical direction,
The rotation support mechanism includes:
A base portion provided integrally with the rotating shaft;
a flange portion provided integrally with the substrate holding portion;
A fastening member that penetrates the flange portion and is fastened to the base portion;
Equipped with
The base portion has a first mounting plane that abuts against the flange portion,
The flange portion has a second mounting plane that abuts against the base portion,
the first mounting plane is a plane extending along an axial direction of the rotating shaft and a tangential direction with respect to an outer circumferential surface of the rotating shaft,
the substrate holder is fastened to the rotating shaft by the fastening member penetrating the flange portion in a direction intersecting with the second mounting plane while the first mounting plane and the second mounting plane are in contact with each other;
Substrate processing equipment. A first engagement portion is formed on the first mounting plane,
A second engagement portion is formed on the second mounting plane,
When the first mounting plane and the second mounting plane are in contact with each other, the first engagement portion and the second engagement portion are engaged with each other.
The substrate processing apparatus according to claim 1 . the rotation support mechanism has a non-contact stop part that stops the substrate holding part at the film formation standing position during rotation drive that rotates the substrate holding part from the horizontal transport position to the film formation standing position,
The substrate processing apparatus according to claim 1 . The mask comprises:
is disposed between the boundary position between the processing chamber and the rear chamber and the substrate in the film formation standing position.
The substrate processing apparatus according to claim 1 . the substrate processing unit faces the mask and protrudes from the boundary position between the processing chamber and the rear chamber toward the rear chamber;
The substrate processing apparatus according to claim 1 . The substrate processing unit has a deposition source,
A deposition process is performed on the substrate in the front space .
The substrate processing apparatus according to claim 5 . The substrate processing section has a cathode electrode,
In the front space , a sputtering process is performed on the substrate .
The substrate processing apparatus according to claim 5 .