JP7713586B2 - VACUUM PROCESSING APPARATUS, PARTICLE REMOVAL MECHANISM, AND PARTICLE REMOVAL METHOD - Google Patents
VACUUM PROCESSING APPARATUS, PARTICLE REMOVAL MECHANISM, AND PARTICLE REMOVAL METHODInfo
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Description
本発明は、真空処理装置、パーティクル除去機構、及びパーティクル除去方法に関する。The present invention relates to a vacuum processing apparatus, a particle removal mechanism, and a particle removal method.
成膜装置等に代表される真空処理装置には、真空処理対象である基板、または基板を支持するステージの除電を行うための除電装置が取り付けられる場合がある（例えば、特許文献１参照）。除電装置からは、帯電した基板またはステージに、これらの帯電電位とは逆極性の電荷が照射される。これにより、基板またはステージの帯電が解消される。Vacuum processing equipment such as a film forming apparatus may be equipped with a static elimination device for eliminating static electricity from a substrate to be vacuum processed or a stage supporting the substrate (see, for example, Patent Document 1). The static elimination device irradiates a charged substrate or stage with a charge of the opposite polarity to the charged potential of the substrate or stage. This eliminates the charge on the substrate or stage.
しかしながら、除電装置では、その内部に発生する荷電粒子によって除電装置の内部に設けられた電極部品がエッチングされる場合がある。このような場合、電極部品のエッチングされた部分がパーティクル（異物）となって、該パーティクルが真空処理装置内に飛遊する場合がある。パーティクルが真空処理装置内に飛遊すると、例えば、成膜処理中に基板に形成される被膜にパーティクルが入り込むことになり、成膜工程の歩留まりを低減させてしまう。このようなパーティクル発生は、除電装置に限らず、他の付属装置、例えば、電離真空計等の真空計でも起き得る。However, in the static eliminator, the electrode parts provided inside the static eliminator may be etched by the charged particles generated inside the static eliminator. In such a case, the etched parts of the electrode parts may become particles (foreign matter), and the particles may fly into the vacuum processing device. If the particles fly into the vacuum processing device, for example, the particles may get into the coating formed on the substrate during the film formation process, reducing the yield of the film formation process. Such particle generation is not limited to static eliminators, but may also occur in other auxiliary devices, for example, vacuum gauges such as ionization vacuum gauges.
以上のような事情に鑑み、本発明の目的は、除電装置、電離真空計等の荷電粒子発生源からの真空処理装置内へのパーティクル浸入を抑制する真空処理装置、パーティクル除去機構、及びパーティクル除去方法を提供することにある。In view of the above circumstances, an object of the present invention is to provide a vacuum processing apparatus, a particle removal mechanism, and a particle removal method that suppress the intrusion of particles into the vacuum processing apparatus from a charged particle generation source such as a static eliminator or an ionization vacuum gauge.
上記目的を達成するため、本発明の一形態に係る真空処理装置は、真空容器と、荷電粒子発生源と、排気機構と、パーティクル除去機構とを具備する。
上記荷電粒子発生源では、荷電粒子が内部に生成する。
上記排気機構は、上記真空容器内のガスを排気する。
上記パーティクル除去機構は、上記真空容器と上記荷電粒子発生源との間に配置され上記真空容器と上記荷電粒子発生源とを連結する中間槽を含み、上記荷電粒子発生源で発生したパーティクルをガス気流によって上記真空容器の手前で上記中間槽の外に排出する。 In order to achieve the above object, a vacuum processing apparatus according to one aspect of the present invention includes a vacuum vessel, a charged particle generation source, an exhaust mechanism, and a particle removal mechanism.
In the charged particle source, charged particles are generated inside.
The exhaust mechanism exhausts gas from within the vacuum vessel.
The particle removal mechanism includes an intermediate tank disposed between the vacuum vessel and the charged particle generation source and connecting the vacuum vessel and the charged particle generation source, and discharges particles generated in the charged particle generation source outside the intermediate tank just before the vacuum vessel by a gas flow.
このような真空処理装置であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入が抑制される。Such a vacuum processing apparatus can suppress the intrusion of particles from the charged particle generation source into the vacuum processing apparatus.
上記真空処理装置においては、
上記荷電粒子発生源は、上記荷電粒子発生源内で生成する上記荷電粒子の原料となる第１ガスを上記荷電粒子発生源に供給する第１ガス供給源をさらに含み、
上記パーティクル除去機構は、上記ガス気流の原料となる第２ガスを上記中間槽に供給する第２ガス供給源と、上記第２ガス及び上記パーティクルを上記中間槽の外に排出する排出機構とをさらに含み、
上記排気機構は、上記荷電粒子発生源に供給された上記第１ガスを上記中間槽及び上記真空容器を介して排気し、
上記第１ガスが上記排気機構によって排気され、上記第２ガス及び上記パーティクルが上記排出機構によって排出されているとき、上記中間槽における上記第２ガスの流量Ｑ２は、上記中間槽における上記第１ガスの流量Ｑ１よりも大きく設定されてもよい。 In the above vacuum processing apparatus,
the charged particle generation source further includes a first gas supply source that supplies a first gas to the charged particle generation source, the first gas being a raw material for the charged particles generated in the charged particle generation source;
the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas stream to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles to the outside of the intermediate tank,
the exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum container;
When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, a flow rate Q2 of the second gas in the intermediate tank may be set to be larger than a flow rate Q1 of the first gas in the intermediate tank.
このような真空処理装置であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入がより確実に抑制される。With such a vacuum processing apparatus, intrusion of particles from the charged particle generation source into the vacuum processing apparatus can be more reliably suppressed.
上記真空処理装置においては、
上記ガス気流は、上記中間槽において上記荷電粒子発生源から上記真空容器に向かう第１方向に対して交差する第２方向に流れてもよい。 In the above vacuum processing apparatus,
The gas flow may flow in a second direction intersecting a first direction from the charged particle generation source toward the vacuum vessel in the intermediate chamber.
このような真空処理装置であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入がより確実に抑制される。With such a vacuum processing apparatus, intrusion of particles from the charged particle generation source into the vacuum processing apparatus can be more reliably suppressed.
上記真空処理装置においては、
上記パーティクル除去機構は、上記第２ガスを上記中間槽に供給する複数のガス供給ラインを含み、
上記複数のガス供給ラインは、上記第１方向及び上記第２方向に対して交差する第３方向に並列に配置されてもよい。 In the above vacuum processing apparatus,
the particle removing mechanism includes a plurality of gas supply lines that supply the second gas to the intermediate tank;
The plurality of gas supply lines may be arranged in parallel in a third direction intersecting the first direction and the second direction.
このような真空処理装置であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入がより確実に抑制される。With such a vacuum processing apparatus, intrusion of particles from the charged particle generation source into the vacuum processing apparatus can be more reliably suppressed.
本発明の一形態に係るパーティクル除去機構は、真空容器と荷電粒子発生源との間に配置され、上記真空容器と上記荷電粒子発生源とを連結する中間槽を含み、上記荷電粒子発生源で発生したパーティクルをガス気流によって上記真空容器の手前で上記中間槽の外に排出する。A particle removal mechanism according to one embodiment of the present invention includes an intermediate tank disposed between a vacuum vessel and a charged particle generation source, connecting the vacuum vessel and the charged particle generation source, and discharging particles generated in the charged particle generation source outside the intermediate tank just before the vacuum vessel by a gas flow.
このようなパーティクル除去機構であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入が抑制される。Such a particle removal mechanism suppresses the intrusion of particles from the charged particle generation source into the vacuum processing apparatus.
上記パーティクル除去機構においては、
上記荷電粒子発生源は、上記荷電粒子発生源内で生成する上記荷電粒子の原料となる第１ガスを上記荷電粒子発生源に供給する第１ガス供給源をさらに含み、
上記パーティクル除去機構は、上記ガス気流の原料となる第２ガスを上記中間槽に供給する第２ガス供給源と、上記第２ガス及び上記パーティクルを上記中間槽の外に排出する排出機構とをさらに含み、
上記真空容器には、上記真空容器内のガスを排気する排気機構が設けられ、
上記排気機構は、上記荷電粒子発生源に供給された上記第１ガスを上記中間槽及び上記真空容器を介して排気し、
上記第１ガスが上記排気機構によって排気され、上記第２ガス及び上記パーティクルが上記排出機構によって排出されているとき、上記中間槽における上記第２ガスの流量Ｑ２は、上記中間槽における上記第１ガスの流量Ｑ１よりも大きく設定してもよい。 In the particle removal mechanism,
the charged particle generation source further includes a first gas supply source that supplies a first gas to the charged particle generation source, the first gas being a raw material for the charged particles generated in the charged particle generation source;
the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas stream to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles to the outside of the intermediate tank,
the vacuum vessel is provided with an exhaust mechanism for exhausting gas from within the vacuum vessel;
the exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum container;
When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, a flow rate Q2 of the second gas in the intermediate tank may be set to be larger than a flow rate Q1 of the first gas in the intermediate tank.
このようなパーティクル除去機構であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入がより確実に抑制される。Such a particle removal mechanism can more reliably prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
上記パーティクル除去機構においては、
上記ガス気流は、上記中間槽において上記荷電粒子発生源から上記真空容器に向かう第１方向に対して交差する第２方向に流れてもよい。 In the particle removal mechanism,
The gas flow may flow in a second direction intersecting a first direction from the charged particle generation source toward the vacuum vessel in the intermediate chamber.
このようなパーティクル除去機構であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入がより確実に抑制される。Such a particle removal mechanism can more reliably prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
上記パーティクル除去機構においては、
上記第２ガスを上記中間槽に供給する複数のガス供給ラインを含み、
上記複数のガス供給ラインは、上記第１方向及び上記第２方向に対して交差する第３方向に並列に配置されてもよい。 In the particle removal mechanism,
a plurality of gas supply lines that supply the second gas to the intermediate tank;
The plurality of gas supply lines may be arranged in parallel in a third direction intersecting the first direction and the second direction.
このようなパーティクル除去機構であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入がより確実に抑制される。Such a particle removal mechanism can more reliably prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
本発明の一形態に係るパーティクル除去方法は、真空容器と荷電粒子発生源との間に配置され、上記真空容器と上記荷電粒子発生源とを連結する中間槽を用い、
上記荷電粒子発生源で発生したパーティクルをガス気流によって上記真空容器の手前で上記中間槽の外に排出する。 A particle removal method according to one aspect of the present invention includes using an intermediate tank that is disposed between a vacuum vessel and a charged particle generation source and connects the vacuum vessel and the charged particle generation source,
Particles generated by the charged particle generation source are discharged to the outside of the intermediate tank before the vacuum vessel by a gas flow.
このようなパーティクル除去方法であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入が抑制される。Such a particle removal method can prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
上記パーティクル除去方法においては、
上記荷電粒子発生源は、上記荷電粒子発生源内で生成する上記荷電粒子の原料となる第１ガスを上記荷電粒子発生源に供給する第１ガス供給源をさらに含み、
上記パーティクル除去機構は、上記ガス気流の原料となる第２ガスを上記中間槽に供給する第２ガス供給源と、上記第２ガス及び上記パーティクルを上記中間槽の外に排出する排出機構とをさらに含み、
上記真空容器には、上記真空容器内のガスを排気する排気機構が設けられ、
上記排気機構によって上記荷電粒子発生源に供給された上記第１ガスを上記中間槽及び上記真空容器を介して排気し、
上記第１ガスが上記排気機構によって排気され、上記第２ガス及び上記パーティクルが上記排出機構によって排出されているとき、上記中間槽における上記第２ガスの流量Ｑ２は、上記中間槽における上記第１ガスの流量Ｑ１よりも大きく設定してもよい。 In the above particle removal method,
the charged particle generation source further includes a first gas supply source that supplies a first gas to the charged particle generation source, the first gas being a raw material for the charged particles generated in the charged particle generation source;
the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas stream to the intermediate tank, and a discharge mechanism that discharges the second gas and the particles to the outside of the intermediate tank,
the vacuum vessel is provided with an exhaust mechanism for exhausting gas from within the vacuum vessel;
The first gas supplied to the charged particle generation source by the exhaust mechanism is exhausted through the intermediate tank and the vacuum container;
When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, a flow rate Q2 of the second gas in the intermediate tank may be set to be larger than a flow rate Q1 of the first gas in the intermediate tank.
このようなパーティクル除去方法であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入が抑制される。Such a particle removal method can prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
上記パーティクル除去方法においては、
上記ガス気流を上記中間槽において上記荷電粒子発生源から上記真空容器に向かう第１方向に対して交差する第２方向に流してもよい。 In the above particle removal method,
The gas flow may be caused to flow in a second direction intersecting a first direction from the charged particle generation source toward the vacuum vessel in the intermediate chamber.
このようなパーティクル除去方法であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入が抑制される。Such a particle removal method can prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
上記パーティクル除去方法においては、
上記パーティクル除去機構は、上記第２ガスを上記中間槽に供給する複数のガス供給ラインを含み、
上記複数のガス供給ラインは、上記第１方向及び上記第２方向に対して交差する第３方向に並列に配置してもよい。 In the above particle removal method,
the particle removing mechanism includes a plurality of gas supply lines that supply the second gas to the intermediate tank;
The plurality of gas supply lines may be arranged in parallel in a third direction intersecting the first direction and the second direction.
このようなパーティクル除去方法であれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入が抑制される。Such a particle removal method can prevent particles from entering the vacuum processing apparatus from the charged particle generation source.
以上述べたように、本発明によれば、荷電粒子発生源からの真空処理装置内へのパーティクル浸入を抑制する真空処理装置、パーティクル除去機構、及びパーティクル除去方法が提供される。As described above, according to the present invention, there are provided a vacuum processing apparatus, a particle removal mechanism, and a particle removal method that suppress the intrusion of particles from a charged particle generation source into the vacuum processing apparatus.
以下、図面を参照しながら、本発明の実施形態を説明する。各図面には、ＸＹＺ軸座標が導入される場合がある。また、同一の部材または同一の機能を有する部材には同一の符号を付す場合があり、その部材を説明した後には適宜説明を省略する場合がある。また、以下に示す数値は例示であり、この例に限らない。Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced. In addition, the same reference numerals may be used for the same components or components having the same functions, and after the components are described, the description may be omitted as appropriate. In addition, the numerical values shown below are examples and are not limited to these examples.
図１（ａ）は、本実施形態の真空処理装置を示す模式的断面図である。図１（ｂ）は、図１（ａ）のＡ１－Ａ２断面部を示す模式的断面図である。Fig. 1(a) is a schematic cross-sectional view showing a vacuum processing apparatus according to the present embodiment, and Fig. 1(b) is a schematic cross-sectional view showing the A1-A2 cross section of Fig. 1(a).
図１（ａ）に示すように、真空処理装置１は、真空容器１０と、荷電粒子発生源２０と、パーティクル除去機構３０と、排気機構４０とを具備する。真空容器１０の内部には、基板１０２を支持するステージ１０１が設けられている。真空容器１０の内部のガスは、排気機構４０によって排気される。排気機構４０は、ターボポンプ等の真空ポンプを含む。1A, the vacuum processing apparatus 1 includes a vacuum vessel 10, a charged particle generation source 20, a particle removal mechanism 30, and an exhaust mechanism 40. A stage 101 that supports a substrate 102 is provided inside the vacuum vessel 10. Gas inside the vacuum vessel 10 is exhausted by the exhaust mechanism 40. The exhaust mechanism 40 includes a vacuum pump such as a turbo pump.
真空容器１０は、減圧状態を維持することが可能な容器である。例えば、真空処理装置１がスパッタリング装置である場合、真空容器１０の内部には、図示しない成膜源（スパッタリングターゲット）がステージ１０１に対向するように設けられる。さらに、真空処理装置１は、放電ガスを供給するガス供給機構（不図示）、放電用電源（不図示）等を備える。真空処理装置１は、スパッタリング装置に限らず、ＣＶＤ装置、エッチング装置、イオンミリング装置、イオン注入装置、あるいは巻取式成膜装置でもよい。The vacuum vessel 10 is a vessel capable of maintaining a reduced pressure state. For example, when the vacuum processing apparatus 1 is a sputtering apparatus, a film formation source (sputtering target) (not shown) is provided inside the vacuum vessel 10 so as to face the stage 101. Furthermore, the vacuum processing apparatus 1 includes a gas supply mechanism (not shown) for supplying a discharge gas, a discharge power supply (not shown), and the like. The vacuum processing apparatus 1 is not limited to a sputtering apparatus, and may be a CVD apparatus, an etching apparatus, an ion milling apparatus, an ion implantation apparatus, or a roll-up type film formation apparatus.
荷電粒子発生源２０は、例えば、除電装置である。荷電粒子発生源２０は、本体部２０１と、ガス供給源２０２（第１ガス供給源）と、放電用電源２０３とを有する。ガス供給源２０２からは、本体部２０１に荷電粒子（正イオン、負イオン、電子）の原料となるガス（第１ガス）が供給される。そして、放電用電源２０３から放電電力が投入されると、本体部２０１の内部では荷電粒子が生成する。第１ガスは、例えば、Ａｒ、Ｘｅ等の希ガス、Ｎ２等である。放電用電源２０３としては、ＲＦ電源、マイクロ波電源等があげられる。 The charged particle generating source 20 is, for example, a static eliminator. The charged particle generating source 20 has a main body 201, a gas supply source 202 (first gas supply source), and a discharge power source 203. A gas (first gas) that is a raw material of charged particles (positive ions, negative ions, electrons) is supplied from the gas supply source 202 to the main body 201. When discharge power is input from the discharge power source 203, charged particles are generated inside the main body 201. The first gas is, for example, a rare gas such as Ar or Xe, or N2 . The discharge power source 203 can be, for example, an RF power source, a microwave power source, or the like.
荷電粒子発生源２０に供給されたガスは、排気機構４０によってパーティクル除去機構３０の中間槽３０３及び真空容器１０を介して排気される。荷電粒子発生源２０は、除電装置に限らず、イオン注入、イオンミリング、表面処理等で用いられるイオン源、あるいは電離真空計に代表される圧力計でもよい。The gas supplied to the charged particle generation source 20 is exhausted by the exhaust mechanism 40 through the intermediate tank 303 of the particle removal mechanism 30 and the vacuum vessel 10. The charged particle generation source 20 is not limited to a static eliminator, and may be an ion source used in ion implantation, ion milling, surface treatment, or the like, or a pressure gauge such as an ionization vacuum gauge.
荷電粒子発生源２０においては、内部で発生した荷電粒子が、その内部で加速され、内部に設けられている電極部品に衝突する場合がある。このような場合、電極部品がエッチングされ、電極部品のエッチングされた部分がパーティクル（異物）となって、このパーティクルが真空容器１０内に飛遊する場合がある。パーティクルが真空容器１０内に飛遊すると、例えば、成膜処理中に基板１０２に形成される被膜にパーティクルが入り込み、この被膜を含む製品の歩留まりを低減させてしまう。従って、このようなパーティクルは、真空容器１０の手前で極力排除することが望ましい。In the charged particle generating source 20, charged particles generated inside may be accelerated inside the source and collide with an electrode part provided inside the source. In such a case, the electrode part may be etched, and the etched part of the electrode part may become a particle (foreign matter), and the particle may fly into the vacuum vessel 10. If the particle flies into the vacuum vessel 10, for example, the particle may get into the coating formed on the substrate 102 during the film forming process, reducing the yield of the product including the coating. Therefore, it is desirable to remove such particles as much as possible before the vacuum vessel 10.
パーティクル除去機構３０は、ガス供給源３０１（第２ガス供給源）と、ガス供給ライン３０２と、中間槽３０３と、排出ライン３０４と、フィルタ３０５と、排出機構３０６とを有する。ガス供給源３０１と、ガス供給ライン３０２、中間槽３０３、排出ライン３０４、フィルタ３０５、及び排出機構３０６は、直列状に配置される。The particle removal mechanism 30 includes a gas supply source 301 (second gas supply source), a gas supply line 302, an intermediate tank 303, an exhaust line 304, a filter 305, and an exhaust mechanism 306. The gas supply source 301, the gas supply line 302, the intermediate tank 303, the exhaust line 304, the filter 305, and the exhaust mechanism 306 are arranged in series.
ガス供給源３０１は、ガス気流の原料となるガス（第２ガス）をガス供給ライン３０２を介して中間槽３０３に供給する。第２ガスは、例えば、Ａｒ、Ｎ２等である。ガス供給ライン３０２は、ガス供給源３０１と中間槽３０３との間に配置される。ガス供給ライン３０２は、ガス供給源３０１と中間槽３０３とを連結する。中間槽３０３は、真空容器１０と荷電粒子発生源２０との間に配置される。中間槽３０３は、真空容器１０と荷電粒子発生源２０とを連結する。図１（ｂ）に示される中間槽３０３を真空容器１０から見た中間槽３０３の外形は、矩形となっているが、円形でもよく、楕円でもよい。 The gas supply source 301 supplies a gas (second gas) serving as a raw material for the gas stream to the intermediate tank 303 via a gas supply line 302. The second gas is, for example, Ar, N2 , or the like. The gas supply line 302 is disposed between the gas supply source 301 and the intermediate tank 303. The gas supply line 302 connects the gas supply source 301 and the intermediate tank 303. The intermediate tank 303 is disposed between the vacuum vessel 10 and the charged particle generation source 20. The intermediate tank 303 connects the vacuum vessel 10 and the charged particle generation source 20. The outer shape of the intermediate tank 303 shown in FIG. 1B when viewed from the vacuum vessel 10 is rectangular, but may be circular or elliptical.
排出ライン３０４は、中間槽３０３とフィルタ３０５との間に配置される。排出ライン３０４は、中間槽３０３とフィルタ３０５とを連結する。フィルタ３０５は、排出ライン３０４と排出機構３０６との間に配置される。排出機構３０６は、ターボポンプ等の真空ポンプを含み、第２ガス及びパーティクルを排出ライン３０４を介して中間槽３０３の外に排出する。また、排出機構３０６の排気速度Ｓ２は、排気機構４０の排気速度Ｓ１よりも速い。 The exhaust line 304 is disposed between the intermediate tank 303 and the filter 305. The exhaust line 304 connects the intermediate tank 303 and the filter 305. The filter 305 is disposed between the exhaust line 304 and an exhaust mechanism 306. The exhaust mechanism 306 includes a vacuum pump such as a turbo pump, and exhausts the second gas and particles to the outside of the intermediate tank 303 via the exhaust line 304. In addition, the exhaust speed S2 of the exhaust mechanism 306 is faster than the exhaust speed S1 of the exhaust mechanism 40.
パーティクル除去機構３０は、荷電粒子発生源２０で発生したパーティクルをガス気流によって真空容器１０の手前で中間槽３０３の外に排出する。荷電粒子発生源２０で発生したパーティクルは、パーティクル除去機構３０によって、中間槽３０３から中間槽３０３の外に輸送され、真空容器１０へのパーティクルの浸入が抑制される。The particle removal mechanism 30 uses a gas flow to discharge particles generated in the charged particle generation source 20 to the outside of the intermediate chamber 303 just before the vacuum chamber 10. The particles generated in the charged particle generation source 20 are transported from the intermediate chamber 303 to the outside of the intermediate chamber 303 by the particle removal mechanism 30, and intrusion of the particles into the vacuum chamber 10 is suppressed.
また、図１（ｂ）に示すように、パーティクル除去機構３０は、第２ガスを中間槽３０３に供給する複数のガス供給ライン３０２ａ～３０２ｄを含む。図１（ｂ）に示される符号２０５は、荷電粒子発生源２０と中間槽３０３とが連結する連通孔２０５の一例である。ここで、荷電粒子発生源２０から真空容器１０に向かう方向を第１方向（Ｘ軸方向）、第１方向と交差する方向を第２方向（±Ｚ軸方向）、第１方向及び第２方向のそれぞれに交差する方向を第３方向（±Ｙ軸方向）とする。「交差」とは、例えば、直交を意味する。また、第２方向は、真空処理装置１が設置される床面に対して垂直方向でもよく、水平方向でもよく、斜め方向でもよい。As shown in FIG. 1B, the particle removal mechanism 30 includes a plurality of gas supply lines 302a to 302d that supply the second gas to the intermediate tank 303. Reference numeral 205 shown in FIG. 1B is an example of a communication hole 205 that connects the charged particle generation source 20 and the intermediate tank 303. Here, the direction from the charged particle generation source 20 toward the vacuum vessel 10 is defined as a first direction (X-axis direction), the direction intersecting with the first direction is defined as a second direction (±Z-axis direction), and the direction intersecting with each of the first and second directions is defined as a third direction (±Y-axis direction). "Intersecting" means, for example, perpendicular. The second direction may be vertical, horizontal, or oblique to the floor surface on which the vacuum processing apparatus 1 is installed.
複数のガス供給ライン３０２ａ～３０２ｄは、第３方向に並列に配置される。複数のガス供給ライン３０２ａ～３０２ｄは、ガス供給ライン３０２の途中で分岐され中間槽３０３にまで到達したものでもよく、ガス供給源３０１から分岐され中間槽３０３にまで達したものでもよい。なお、複数のガス供給ラインの数は、図示された数に限らない。この本数は、中間槽３０３の第２方向の幅に応じて適宜変更される。The gas supply lines 302a to 302d are arranged in parallel in the third direction. The gas supply lines 302a to 302d may be branched off from the gas supply line 302 and reach the intermediate tank 303, or may be branched off from the gas supply source 301 and reach the intermediate tank 303. The number of gas supply lines is not limited to the number shown in the figure. This number is appropriately changed depending on the width of the intermediate tank 303 in the second direction.
パーティクル除去機構３０の作用について説明する。図２（ａ）、（ｂ）は、本実施形態の真空処理装置の動作を示す模式的断面図である。図２（ｂ）は、図１（ａ）のＡ１－Ａ２断面部に対応する。The operation of the particle removing mechanism 30 will now be described. Figures 2(a) and (b) are schematic cross-sectional views showing the operation of the vacuum processing apparatus of this embodiment. Figure 2(b) corresponds to the A1-A2 cross-sectional portion of Figure 1(a).
真空容器１０内の基板１０２またはステージ１０１が正または負に帯電していた場合には、荷電粒子発生源２０から基板１０２に向けて逆極性の荷電粒子２２０が照射される。これにより、基板１０２またはステージ１０１の帯電が解消され得る。この際、荷電粒子発生源２０内でパーティクル２１０が発生すると、このパーティクル２１０が荷電粒子発生源２０から真空容器１０に向けて飛遊する場合がある。When the substrate 102 or stage 101 in the vacuum chamber 10 is positively or negatively charged, charged particles 220 of the opposite polarity are irradiated from the charged particle generating source 20 toward the substrate 102. This can eliminate the charge on the substrate 102 or the stage 101. At this time, if particles 210 are generated in the charged particle generating source 20, the particles 210 may fly from the charged particle generating source 20 toward the vacuum chamber 10.
しかしながら、真空処理装置１においては、パーティクル除去機構３０によって、中間槽３０２において第２方向（ガス供給ライン３０２の側から排出ライン３０４の側に向かう方向）に流れるガス気流３１０が形成される。これにより、パーティクル２１０が荷電粒子発生源２０から中間槽３０３にまで飛遊したとしても、パーティクル２１０は、真空容器１０の手前でガス気流３１０の流れに乗ってガス気流３１０とともに排出ライン３０４に排出される。この後、パーティクル２１０は、フィルタ３０５によって捕捉されて、フィルタ３０５を通過したガス気流３１０が排出機構３０６によって排気される。However, in the vacuum processing apparatus 1, the particle removal mechanism 30 forms a gas flow 310 flowing in the second direction (from the gas supply line 302 side toward the exhaust line 304 side) in the intermediate tank 302. As a result, even if the particles 210 fly from the charged particle generation source 20 to the intermediate tank 303, the particles 210 ride on the flow of the gas flow 310 just before the vacuum vessel 10 and are exhausted together with the gas flow 310 to the exhaust line 304. Thereafter, the particles 210 are captured by the filter 305, and the gas flow 310 that has passed through the filter 305 is exhausted by the exhaust mechanism 306.
第１ガスが排気機構４０によって排気され、第２ガス及びパーティクル２１０が排出機構３０６によって排出されているときには、中間槽３０３における第２ガスの流量Ｑ２は、中間槽３０３における第１ガスの流量Ｑ１よりも大きく設定される。これにより、第２ガスの気流は、第１ガスの気流よりも強くなり、パーティクル２１０がガス気流３１０によって荷電粒子発生源２０から真空容器１０に向かう方向よりも、ガス供給ライン３０２の側から排出ライン３０４の側に向かう方向に確実に輸送される。 When the first gas is exhausted by the exhaust mechanism 40 and the second gas and the particles 210 are exhausted by the exhaust mechanism 306, the flow rate Q2 of the second gas in the intermediate tank 303 is set to be larger than the flow rate Q1 of the first gas in the intermediate tank 303. As a result, the flow of the second gas becomes stronger than the flow of the first gas, and the particles 210 are reliably transported by the gas flow 310 in the direction from the gas supply line 302 side to the exhaust line 304 side rather than in the direction from the charged particle generation source 20 toward the vacuum vessel 10.
また、図２（ａ）に示すように、ガス供給ライン３０２ａ～３０２ｄは、第３方向に並列に配置されている。これにより、ガス供給ライン３０２ａ～３０２ｄのそれぞれから中間槽３０３に流入するガス気流３１０が第３方向に合成されて、中間槽３０３においてはガス気流３１０によるエアカーテン３２０が形成される。エアカーテン３２０は、第１方向において連通孔２０５と重なり、その面積が連通孔２０５の面積よりも大きい。このようなエアカーテン３２０が中間槽３０３に形成されると、パーティクル２１０にとってはエアカーテン３２０が障壁となって、パーティクル２１０は、真空容器１０へ侵入することができない。この結果、パーティクル２１０の真空容器１０への浸入が確実に抑制される。2A, the gas supply lines 302a to 302d are arranged in parallel in the third direction. As a result, the gas flows 310 flowing into the intermediate tank 303 from the gas supply lines 302a to 302d are combined in the third direction, and an air curtain 320 is formed by the gas flows 310 in the intermediate tank 303. The air curtain 320 overlaps with the communication hole 205 in the first direction, and its area is larger than the area of the communication hole 205. When such an air curtain 320 is formed in the intermediate tank 303, the air curtain 320 becomes a barrier for the particles 210, and the particles 210 cannot enter the vacuum container 10. As a result, the intrusion of the particles 210 into the vacuum container 10 is reliably suppressed.
真空処理装置１は、以下のように使用される。例えば、排出機構３０６を作動させ、ガス供給源３０１によって第２ガスを中間槽３０３に導入する。これにより、中間槽３０３で第２ガスによるガス気流が形成される。次に、荷電粒子発生源２０のガス供給源２０２によって第１ガスを本体部２０１に導入して放電用電源２０３を作動させる。これにより、ステージ１０１の除電が開始される。The vacuum processing apparatus 1 is used as follows. For example, the exhaust mechanism 306 is operated, and the second gas is introduced into the intermediate tank 303 by the gas supply source 301. This causes a gas flow of the second gas to be formed in the intermediate tank 303. Next, the first gas is introduced into the main body 201 by the gas supply source 202 of the charged particle generation source 20, and the discharge power supply 203 is operated. This starts de-electrifying the stage 101.
この際、中間槽３０３では、エアカーテン３２０が既に形成されていることから、パーティクル２１０の真空容器１０への浸入が抑制される。続いて、基板１０２をステージ１０１に設置する。この際、第１ガスの本体部２０１への導入及び放電用電源２０３の作動は、停止しなくてもよい。At this time, since the air curtain 320 has already been formed in the intermediate tank 303, the particles 210 are prevented from entering the vacuum vessel 10. Next, the substrate 102 is placed on the stage 101. At this time, the introduction of the first gas into the main body 201 and the operation of the discharge power supply 203 do not need to be stopped.
次に、第１ガスの本体部２０１への導入及び放電用電源２０３の作動、及び、排出機構３０６の作動及び第２ガスの中間槽３０３への導入を停止し、基板１０２のプロセス処理を行う。プロセス処理とは、例えば、スパッタリング、ＣＶＤ等の成膜、エッチング、あるいは、イオンミリングである。なお、プロセス処理中であっても、ステージ１０１の除電が必要な場合は、第１ガスの本体部２０１への導入及び放電用電源２０３の作動、及び、排出機構３０６の作動及び第２ガスの中間槽３０３への導入をしてもよい。Next, the introduction of the first gas into the main body 201, the operation of the discharge power supply 203, the operation of the exhaust mechanism 306, and the introduction of the second gas into the intermediate tank 303 are stopped, and the process treatment of the substrate 102 is performed. The process treatment is, for example, sputtering, film formation such as CVD, etching, or ion milling. Note that even during the process treatment, if it is necessary to remove electricity from the stage 101, the introduction of the first gas into the main body 201, the operation of the discharge power supply 203, the operation of the exhaust mechanism 306, and the introduction of the second gas into the intermediate tank 303 may be performed.
基板１０２のプロセス処理が終了した後、排出機構３０６を作動させ、第２ガスを中間槽３０３に導入した後、第１ガスを本体部２０１に導入して放電用電源２０３を作動させて、基板１０２またはステージ１０１の除電を開始する。この後、基板１０２は、真空容器１０から搬出される。基板１０２の搬出後、ステージ１０１の除電は所定の時間、継続したままでもよい。次に、第１ガスの本体部２０１への導入、放電用電源２０３の作動、及び排出機構３０６の作動、第２ガスを中間槽３０３への導入を停止する。After the process treatment of the substrate 102 is completed, the exhaust mechanism 306 is operated, the second gas is introduced into the intermediate chamber 303, and then the first gas is introduced into the main body 201 and the discharge power supply 203 is operated to start de-electrifying the substrate 102 or the stage 101. The substrate 102 is then carried out from the vacuum vessel 10. After the substrate 102 is carried out, the de-electrification of the stage 101 may be continued for a predetermined time. Next, the introduction of the first gas into the main body 201, the operation of the discharge power supply 203, the operation of the exhaust mechanism 306, and the introduction of the second gas into the intermediate chamber 303 are stopped.
図３は、本実施形態の真空処理装置の変形例を示す模式的断面図である。FIG. 3 is a schematic cross-sectional view showing a modified example of the vacuum processing apparatus of the present embodiment.
排出ライン３０４は、一本に限らず、複数の排出ライン３０４ａ～３０４ｄを有してもよい。例えば、複数の排出ライン３０４ａ～３０４ｄは、ガス供給ライン３０２ａ～３０２ｄと同じピッチで第３方向に並列に配置される。複数の排出ライン３０４ａ～３０４ｄは、排出ライン３０４の途中で１本に纏まりフィルタ３０５にまで到達してもよく、中間槽３０３からフィルタ３０５まで分岐されたままフィルタ３０５にまで達したものでもよい。The exhaust line 304 is not limited to one, and may include multiple exhaust lines 304a to 304d. For example, the multiple exhaust lines 304a to 304d are arranged in parallel in the third direction at the same pitch as the gas supply lines 302a to 302d. The multiple exhaust lines 304a to 304d may be combined into one in the middle of the exhaust line 304 and reach the filter 305, or may be branched from the intermediate tank 303 to the filter 305 and reach the filter 305.
このような構成であれば、ガス供給ライン３０２ａ～３０２ｄのそれぞれから中間槽３０３に流入したガス気流３１０は、中間槽３０３において略直線状に進行し、ガス供給ライン３０２ａ～３０２ｄのそれぞれが対向する排出ラインに排出されていく。これにより、中間槽３０３においては乱流がより抑制されたエアカーテン３２０が形成されることになる。In this configuration, the gas flow 310 that flows into the intermediate tank 303 from each of the gas supply lines 302a to 302d advances in a substantially straight line in the intermediate tank 303, and is discharged to the opposing discharge line of each of the gas supply lines 302a to 302d. As a result, an air curtain 320 in which turbulence is further suppressed is formed in the intermediate tank 303.
以上、本発明の実施形態について説明したが、本発明は上述の実施形態にのみ限定されるものではなく種々変更を加え得ることは勿論である。各実施形態は、独立の形態とは限らず、技術的に可能な限り複合することができる。例えば、本発明では、パーティクル除去機構３０を含む真空処理装置１のほか、真空処理装置１に組み込まれたパーティクル除去機構３０が提供される。さらに、パーティクル除去機構３０を利用したパーティクル除去方法が提供される。Although the embodiments of the present invention have been described above, it is needless to say that the present invention is not limited to the above-mentioned embodiments and various modifications can be made. Each embodiment is not necessarily an independent form, and can be combined as far as technically possible. For example, in the present invention, in addition to a vacuum processing apparatus 1 including a particle removal mechanism 30, a particle removal mechanism 30 incorporated in the vacuum processing apparatus 1 is provided. Furthermore, a particle removal method utilizing the particle removal mechanism 30 is provided.
例えば、上記の中間槽３０３を用い、荷電粒子発生源２０で発生したパーティクル２１０をガス気流３１０によって真空容器１０の手前で中間槽３０３の外に排出するパーティクル除去方法が提供される。For example, a particle removal method is provided in which the above-mentioned intermediate chamber 303 is used, and the particles 210 generated in the charged particle generation source 20 are discharged outside the intermediate chamber 303 before the vacuum chamber 10 by a gas flow 310 .
ここで、排気機構４０によって荷電粒子発生源２０に供給された第１ガスは、中間槽３０３及び真空容器１０を介して排気される。第１ガスが排気機構４０によって排気され、第２ガス及びパーティクル２１０が排出機構３０６によって排出されているとき、中間槽３０３における第２ガスの流量Ｑ２は、中間槽３０３における第１ガスの流量Ｑ１よりも大きく設定される。そして、ガス気流３１０を中間槽３０３において荷電粒子発生源２０から真空容器１０に向かう第１方向に対して交差する第２方向に流すことにより、パーティクルが確実に除去される。 Here, the first gas supplied to the charged particle generation source 20 by the exhaust mechanism 40 is exhausted via the intermediate tank 303 and the vacuum vessel 10. When the first gas is exhausted by the exhaust mechanism 40 and the second gas and particles 210 are exhausted by the exhaust mechanism 306, the flow rate Q2 of the second gas in the intermediate tank 303 is set to be larger than the flow rate Q1 of the first gas in the intermediate tank 303. Then, by causing the gas flow 310 to flow in the intermediate tank 303 in a second direction intersecting the first direction from the charged particle generation source 20 toward the vacuum vessel 10, the particles are reliably removed.
１…真空処理装置
１０…真空容器
２０…荷電粒子発生源
３０…パーティクル除去機構
４０…排気機構
１０１…ステージ
１０２…基板
２０１…本体部
２０２…ガス供給源
２０３…放電用電源
２０５…連通孔
２１０…パーティクル
２２０…荷電粒子
３０１…ガス供給源
３０２、３０２ａ～３０２ｄ…ガス供給ライン
３０３…中間槽
３０４…排出ライン
３０５…フィルタ
３０６…排出機構
３１０…ガス気流
３２０…エアカーテン Reference Signs List 1: Vacuum processing apparatus 10: Vacuum vessel 20: Charged particle generation source 30: Particle removal mechanism 40: Exhaust mechanism 101: Stage 102: Substrate 201: Main body 202: Gas supply source 203: Discharge power source 205: Communication hole 210: Particle 220: Charged particle 301: Gas supply source 302, 302a to 302d: Gas supply line 303: Intermediate tank 304: Exhaust line 305: Filter 306: Exhaust mechanism 310: Gas flow 320: Air curtain
Claims (3)
荷電粒子が内部に生成する荷電粒子発生源と、
前記真空容器内のガスを排気する排気機構と、
前記真空容器と前記荷電粒子発生源との間に配置され前記真空容器と前記荷電粒子発生源とを連結する中間槽を含み、前記荷電粒子発生源で発生したパーティクルをガス気流によって前記真空容器の手前で前記中間槽の外に排出するパーティクル除去機構と、
を具備する真空処理装置であって、
前記荷電粒子発生源は、前記荷電粒子発生源内で生成する前記荷電粒子の原料となる第１ガスを前記荷電粒子発生源に供給する第１ガス供給源を含み、
前記パーティクル除去機構は、前記ガス気流の原料となる第２ガスを前記中間槽に供給する第２ガス供給源と、前記第２ガスを前記中間槽に供給する複数のガス供給ラインと、前記第２ガス及び前記パーティクルを前記中間槽の外に排出する排出機構とをさらに含み、
前記排気機構は、前記荷電粒子発生源に供給された前記第１ガスを前記中間槽及び前記真空容器を介して排気し、
前記第１ガスが前記排気機構によって排気され、前記第２ガス及び前記パーティクルが前記排出機構によって排出されているとき、前記中間槽における前記第２ガスの流量Ｑ ２ は、前記中間槽における前記第１ガスの流量Ｑ １ よりも大きく、
前記ガス気流は、前記中間槽において前記荷電粒子発生源から前記真空容器に向かう第１方向に対して交差する第２方向に流れ、
前記複数のガス供給ラインは、前記第１方向及び前記第２方向に対して交差する第３方向に並列に配置されている
真空処理装置。 A vacuum vessel;
a charged particle source having charged particles generated therein;
an exhaust mechanism for exhausting gas from within the vacuum vessel;
a particle removal mechanism including an intermediate tank disposed between the vacuum vessel and the charged particle generation source and connecting the vacuum vessel and the charged particle generation source, the particle removal mechanism discharging particles generated in the charged particle generation source to outside the intermediate tank before the vacuum vessel by a gas flow;
A vacuum processing apparatus comprising:
the charged particle generation source includes a first gas supply source that supplies a first gas to the charged particle generation source, the first gas being a raw material of the charged particles generated in the charged particle generation source;
the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas flow to the intermediate tank, a plurality of gas supply lines that supply the second gas to the intermediate tank, and an exhaust mechanism that exhausts the second gas and the particles to the outside of the intermediate tank,
the exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum container;
when the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, a flow rate Q2 of the second gas in the intermediate tank is greater than a flow rate Q1 of the first gas in the intermediate tank ;
the gas flow in the intermediate chamber flows in a second direction intersecting a first direction from the charged particle generation source toward the vacuum vessel,
The plurality of gas supply lines are arranged in parallel in a third direction intersecting the first direction and the second direction.
Vacuum processing equipment.
前記荷電粒子発生源は、前記荷電粒子発生源内で生成する前記荷電粒子の原料となる第１ガスを前記荷電粒子発生源に供給する第１ガス供給源を含み、
前記パーティクル除去機構は、前記ガス気流の原料となる第２ガスを前記中間槽に供給する第２ガス供給源と、前記第２ガスを前記中間槽に供給する複数のガス供給ラインと、前記第２ガス及び前記パーティクルを前記中間槽の外に排出する排出機構とをさらに含み、
前記真空容器には、前記真空容器内のガスを排気する排気機構が設けられ、
前記排気機構は、前記荷電粒子発生源に供給された前記第１ガスを前記中間槽及び前記真空容器を介して排気し、
前記第１ガスが前記排気機構によって排気され、前記第２ガス及び前記パーティクルが前記排出機構によって排出されているとき、前記中間槽における前記第２ガスの流量Ｑ ２ は、前記中間槽における前記第１ガスの流量Ｑ １ よりも大きく、
前記ガス気流は、前記中間槽において前記荷電粒子発生源から前記真空容器に向かう第１方向に対して交差する第２方向に流れ、
前記複数のガス供給ラインは、前記第１方向及び前記第２方向に対して交差する第３方向に並列に配置されている
パーティクル除去機構。 A particle removal mechanism including an intermediate tank disposed between a vacuum vessel and a charged particle generation source, connecting the vacuum vessel and the charged particle generation source, and discharging particles generated in the charged particle generation source to outside the intermediate tank by a gas flow before the vacuum vessel ,
the charged particle generation source includes a first gas supply source that supplies a first gas to the charged particle generation source, the first gas being a raw material of the charged particles generated in the charged particle generation source;
the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas flow to the intermediate tank, a plurality of gas supply lines that supply the second gas to the intermediate tank, and an exhaust mechanism that exhausts the second gas and the particles to the outside of the intermediate tank,
the vacuum vessel is provided with an exhaust mechanism for exhausting gas from within the vacuum vessel;
the exhaust mechanism exhausts the first gas supplied to the charged particle generation source through the intermediate tank and the vacuum container;
when the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, a flow rate Q2 of the second gas in the intermediate tank is greater than a flow rate Q1 of the first gas in the intermediate tank ;
the gas flow in the intermediate chamber flows in a second direction intersecting a first direction from the charged particle generation source toward the vacuum vessel,
The plurality of gas supply lines are arranged in parallel in a third direction intersecting the first direction and the second direction.
Particle removal mechanism.
前記荷電粒子発生源は、前記荷電粒子発生源内で生成する前記荷電粒子の原料となる第１ガスを前記荷電粒子発生源に供給する第１ガス供給源を含み、
前記パーティクル除去機構は、前記ガス気流の原料となる第２ガスを前記中間槽に供給する第２ガス供給源と、前記第２ガスを前記中間槽に供給する複数のガス供給ラインと、前記第２ガス及び前記パーティクルを前記中間槽の外に排出する排出機構とをさらに含み、
前記真空容器には、前記真空容器内のガスを排気する排気機構が設けられ、
前記排気機構によって前記荷電粒子発生源に供給された前記第１ガスを前記中間槽及び前記真空容器を介して排気し、
前記第１ガスが前記排気機構によって排気され、前記第２ガス及び前記パーティクルが前記排出機構によって排出されているとき、前記中間槽における前記第２ガスの流量Ｑ ２ は、前記中間槽における前記第１ガスの流量Ｑ １ よりも大きく設定する
前記ガス気流を前記中間槽において前記荷電粒子発生源から前記真空容器に向かう第１方向に対して交差する第２方向に流し、
前記複数のガス供給ラインは、前記第１方向及び前記第２方向に対して交差する第３方向に並列に配置する
パーティクル除去方法。 A particle removal method using a particle removal mechanism including an intermediate tank that is disposed between a vacuum vessel and a charged particle generation source and connects the vacuum vessel and the charged particle generation source, the method comprising the steps of: discharging particles generated in the charged particle generation source to outside the intermediate tank by a gas flow just before the vacuum vessel, the method comprising:
the charged particle generation source includes a first gas supply source that supplies a first gas to the charged particle generation source, the first gas being a raw material of the charged particles generated in the charged particle generation source;
the particle removal mechanism further includes a second gas supply source that supplies a second gas serving as a raw material for the gas flow to the intermediate tank, a plurality of gas supply lines that supply the second gas to the intermediate tank, and an exhaust mechanism that exhausts the second gas and the particles to the outside of the intermediate tank,
the vacuum vessel is provided with an exhaust mechanism for exhausting gas from within the vacuum vessel;
The first gas supplied to the charged particle generation source by the exhaust mechanism is exhausted through the intermediate tank and the vacuum container;
When the first gas is exhausted by the exhaust mechanism and the second gas and the particles are exhausted by the discharge mechanism, a flow rate Q2 of the second gas in the intermediate tank is set to be larger than a flow rate Q1 of the first gas in the intermediate tank .
The gas flow is caused to flow in a second direction intersecting a first direction from the charged particle generation source toward the vacuum vessel in the intermediate chamber;
The plurality of gas supply lines are arranged in parallel in a third direction intersecting the first direction and the second direction.
Particle removal methods.
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