JP7716349B2 - Substrate Processing Equipment - Google Patents

Description

The present invention relates to a substrate processing apparatus that performs surface treatments such as etching on substrates using a processing liquid. Substrates to be processed include, for example, semiconductor substrates, substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) used in organic electroluminescence (EL) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

Traditionally, semiconductor device manufacturing processes have used substrate processing equipment to perform various processes on semiconductor substrates (hereinafter simply referred to as "substrates"). One such substrate processing equipment is a batch-type substrate processing equipment that stores processing liquid in a processing tank and immerses multiple substrates in the processing liquid all at once to perform processes such as etching.

Patent Document 1 discloses the provision of a processing liquid discharge unit that discharges processing liquid below multiple substrates held on substrate holders in a processing tank, and an air bubble supply unit that supplies air bubbles. By supplying air bubbles into the processing liquid in addition to discharging the processing liquid, the flow rate of the processing liquid in the processing tank increases, improving the efficiency of substrate surface processing.

Japanese Patent Application Laid-Open No. 2021-106254

However, when bubbles are supplied from the bubble supply unit, the bubbles sometimes do not easily leave the bubble holes. This is particularly true when the bubble holes are formed in a bubble supply pipe made of a material with a large contact angle (for example, PFA (perfluoroalkoxyalkane)). When bubbles have difficulty leaving the bubble holes, multiple bubbles can coalesce to form giant bubbles, resulting in significant variation in bubble size. This results in the problem of it being difficult to achieve the desired effect of supplying bubbles into the treatment liquid.

The present invention was made in consideration of the above-mentioned problems, and aims to provide a substrate processing apparatus that allows air bubbles to be easily removed from the air bubble supply pipe regardless of the contact angle.

To solve the above problem, the invention of claim 1 is a substrate processing apparatus that performs surface processing on substrates using a processing liquid, comprising: a processing tank that stores the processing liquid; a processing liquid supply unit that supplies the processing liquid into the processing tank; a substrate holding unit that holds a substrate and immerses the substrate in the processing liquid stored in the processing tank; and a tubular air bubble supply pipe that is disposed inside the processing tank and supplies air bubbles from below the substrate held in the substrate holding unit to the processing liquid stored in the processing tank, wherein a plurality of air bubble holes are provided on the side of the air bubble supply pipe for ejecting air bubbles, and a plate-shaped guide is provided above each of the plurality of air bubble holes to guide the air bubbles ejected from the air bubble holes upward.

Furthermore, the invention of claim 2 is characterized in that, in the substrate processing apparatus of the invention of claim 1, the plurality of bubble holes are provided on both side surfaces of the bubble supply pipe.

Furthermore, the invention of claim 3 is characterized in that, in the substrate processing apparatus of the invention of claim 1 or claim 2, the bubble supply pipe has a rectangular prism shape, and the guide is provided along the side of the bubble supply pipe.

According to the inventions of claims 1 to 3, a plate-shaped guide is provided above each of the multiple bubble holes to guide the bubbles ejected from the bubble holes upward. Therefore, the bubbles ejected from the bubble holes are guided upward by the guide and released into the processing liquid, allowing the bubbles to easily detach from the bubble supply pipe regardless of the contact angle.

1 is a diagram showing a configuration of a substrate processing apparatus according to the present invention; FIG. 10 is a diagram showing a state in which the lifter is raised. FIG. 10 is a diagram showing a state in which the lifter is lowered. FIG. 2 is a view of the nozzles, the dispersion plate, and the punching plate as seen from the bottom of the treatment tank. FIG. 2 is a perspective view showing the appearance of the bubble supply pipe. FIG. 2 is an enlarged perspective view of a dielectric body. FIG. 10 is a diagram showing the positional relationship between a plurality of dielectric bodies and a substrate. FIG. 10 is a diagram showing how bubbles are ejected from bubble holes. FIG. 10 is a diagram showing how bubbles are released from the inductor. FIG. 10 is a diagram showing how bubbles are discharged from a plurality of bubble supply pipes.

The following describes in detail an embodiment of the present invention with reference to the drawings.

Figure 1 is a diagram showing the configuration of a substrate processing apparatus 1 according to the present invention. The substrate processing apparatus 1 is a batch-type substrate processing apparatus that performs surface treatment on multiple substrates W, such as semiconductor wafers, all at once using a processing liquid. Note that in Figure 1 and the subsequent figures, the dimensions and number of various parts are exaggerated or simplified as necessary for ease of understanding. Also, to clarify the directional relationships between these figures, Figure 1 and the subsequent figures are appropriately illustrated with an XYZ Cartesian coordinate system in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane.

As shown in FIG. 1, the substrate processing apparatus 1 mainly comprises a processing tank 10 that stores processing liquid, a lifter 20 that holds multiple substrates (hereinafter simply referred to as "substrates") W and moves them up and down, a processing liquid supply unit 30 that supplies processing liquid to the processing tank 10, a drainage unit 40 that discharges processing liquid from the processing tank 10, an air bubble supply unit 50 that supplies air bubbles into the processing liquid stored in the processing tank 10, and a control unit 70 that controls the operation of each unit within the apparatus.

The processing tank 10 is a storage container made of a chemical-resistant material such as quartz. The processing tank 10 has a double-tank structure including an inner tank 11 that stores the processing liquid and immerses the substrate W therein, and an outer tank 12 formed around the upper periphery of the inner tank 11. The inner tank 11 and outer tank 12 each have an upper opening that opens upward. The height of the upper edge of the outer tank 12 is higher than the height of the upper edge of the inner tank 11. When the processing liquid is stored up to the upper edge of the inner tank 11 and further processing liquid is supplied from the processing liquid supply unit 30, the processing liquid overflows from the top of the inner tank 11 and into the outer tank 12.

In this specification, the term "processing liquid" is a general term that encompasses various chemical liquids and pure water. Examples of chemical liquids include liquids used for etching processes or liquids used to remove particles. Specific examples include tetramethylammonium hydroxide (TMAH), SC-1 liquid (a mixed solution of ammonium hydroxide, hydrogen peroxide, and pure water), SC-2 liquid (a mixed solution of hydrochloric acid, hydrogen peroxide, and pure water), and phosphoric acid. Chemical liquids also include those diluted with pure water.

The lifter 20 is a transport mechanism for holding and transporting substrates W up and down. The lifter 20 has a back plate 22 extending vertically (Z direction) and three holding bars 21 extending horizontally (Y direction) from the lower end of the back plate 22. Each holding bar 21 has multiple (e.g., 50) holding grooves engraved at a predetermined pitch. Multiple substrates W are held in an upright position (a position in which the normal to their main surfaces is horizontal) parallel to each other and spaced a predetermined distance apart on the three holding bars 21, with their peripheral edges fitted into the holding grooves.

The lifter 20 is connected to a drive mechanism 24, conceptually shown in Figure 1, and moves up and down. Figures 2 and 3 are diagrams showing the lifting and lowering operation of the lifter 20. When the drive mechanism 24 is operated, the lifter 20 moves up and down, and the substrate W is raised and lowered between an immersion position inside the processing bath 10 (position in Figure 3) and a lifted position above the processing bath 10 (position in Figure 2), as shown by arrow AR1 in Figure 1. When the substrate W is lowered to the immersion position while processing liquid is stored in the processing bath 10, the substrate W is immersed in the processing liquid and surface processing is performed.

Returning to Figure 1, the processing liquid supply unit 30 includes a nozzle 31 and a piping system that supplies the processing liquid to it. The nozzle 31 is disposed at the bottom of the inner tank 11 of the processing tank 10. A distribution plate 15 is provided directly above the nozzle 31 so as to face the nozzle 31. Furthermore, a punching plate 17 is provided above the distribution plate 15.

Figure 4 shows the nozzles 31, distribution plate 15, and punched plate 17 as viewed from the bottom of the treatment tank 10. The tip of the pipe 32 of the treatment liquid supply unit 30 (the portion extending into the treatment tank 10) constitutes the pipe 132. Multiple nozzles 31 are formed above the pipe 132. Each nozzle 31 is connected to the pipe 132. A distribution plate 15 is provided above each of the multiple nozzles 31. The distribution plate 15 is a circular plate-shaped member provided parallel to the horizontal plane. The nozzles 31 protrude vertically upward from the pipe 132 toward the distribution plate 15. A punched plate 17 is provided above the distribution plate 15, spanning the entire horizontal cross section of the inner tank 11. A plurality of processing liquid holes 17a are drilled across the entire surface of the punched plate 17.

The processing liquid supplied to the pipe 132 is ejected from the nozzle 31 toward the distribution plate 15 directly above. When processing liquid is stored in the processing tank 10 and ejected upward from the nozzle 31, the flow of processing liquid strikes the distribution plate 15, dispersing the liquid pressure and causing the processing liquid to spread horizontally along the surface of the distribution plate 15. The processing liquid spread horizontally by the distribution plate 15 then rises through the multiple processing liquid holes 17a in the punched plate 17, forming a laminar flow within the processing tank 10 that flows from bottom to top.

Returning to Figure 1, the piping system that supplies the processing liquid to the nozzle 31 is configured with a pump 33, heater 34, filter 35, flow control valve 36, and valve 37 in piping 32. The pump 33, heater 34, filter 35, flow control valve 36, and valve 37 are arranged in this order from upstream to downstream of the piping 32 (from the outer tank 12 to the inner tank 11).

The tip of the pipe 32 extends into the treatment tank 10 to form pipe 132 (Figure 4), and the base of the pipe 32 is connected to the outer tank 12. The pipe 32 guides the treatment liquid flowing out of the outer tank 12 back into the inner tank 11. In other words, the treatment liquid supply unit 30 circulates the treatment liquid within the treatment tank 10. The pump 33 discharges the treatment liquid from the outer tank 12 into the pipe 32 and sends the treatment liquid to the nozzle 31. The heater 34 heats the treatment liquid flowing through the pipe 32. When phosphoric acid or the like is used as the treatment liquid, the treatment liquid is heated by the heater 34, and the heated treatment liquid is stored in the treatment tank 10.

The filter 35 filters the processing liquid flowing through the pipe 32 to remove impurities. The flow rate control valve 36 adjusts the flow rate of the processing liquid flowing through the pipe 32. The valve 37 opens and closes the flow path of the pipe 32. By operating the pump 33 and opening the valve 37, the processing liquid discharged from the outer bath 12 flows through the pipe 32 and is supplied to the nozzle 31, and the flow rate is determined by the flow rate control valve 36.

The chemical liquid supply unit 80 includes a chemical liquid supply source 81, a valve 82, a nozzle 83, and a pipe 84. The tip end of the pipe 84 is connected to the nozzle 83, and the base end is connected to the chemical liquid supply source 81. A valve 82 is provided midway along the pipe 84. When the valve 82 is opened, the chemical liquid is supplied from the chemical liquid supply source 81 to the nozzle 83, and the chemical liquid is ejected from the nozzle 83 toward the outer bath 12 of the processing bath 10. The chemical liquid supplied from the chemical liquid supply unit 80 to the outer bath 12 is supplied into the inner bath 11 by the processing liquid supply unit 30. The nozzle 83 of the chemical liquid supply unit 80 may also supply the chemical liquid directly to the inner bath 12.

The pure water supply unit 90 includes a pure water supply source 91, a valve 92, a nozzle 93, and a pipe 94. The tip end of the pipe 94 is connected to the nozzle 93, and the base end is connected to the pure water supply source 91. A valve 92 is provided midway along the pipe 94. When the valve 92 is opened, pure water is supplied from the pure water supply source 91 to the nozzle 93, and then ejected from the nozzle 93 toward the outer bath 12 of the treatment bath 10. The chemical solution is supplied from the chemical solution supply unit 80 to the treatment bath 10, and the pure water is supplied from the pure water supply unit 90, thereby diluting the chemical solution.

The drainage section 40 includes a pipe 41 and a valve 45. The tip of the pipe 41 is connected to the bottom wall of the inner tank 11 of the processing tank 10. A valve 45 is provided midway along the path of the pipe 41. The base end of the pipe 43 is connected to the drainage equipment of the factory where the substrate processing apparatus 1 is installed. When the valve 45 is opened, the processing liquid stored in the inner tank 11 is rapidly drained from the bottom of the inner tank 11 into the pipe 41 and processed in the drainage equipment.

The bubble supply unit 50 includes multiple bubble supply pipes 51 (six in this embodiment) and a piping system for supplying gas to the pipes. The six bubble supply pipes 51 are located inside the inner bath 11 of the processing bath 10, above the punching plate 17 and below the substrate W held in an immersion position by the lifter 20. Each of the six bubble supply pipes 51 ejects gas into the processing liquid stored in the processing bath 10. When gas is supplied from the six bubble supply pipes 51 into the processing liquid stored in the processing bath 10, the gas forms bubbles and rises through the processing liquid. The gas supplied by the bubble supply unit 50 is, for example, an inert gas. The inert gas is, for example, nitrogen or argon (nitrogen is used in this embodiment).

The piping system that supplies gas to the six bubble supply pipes 51 includes pipes 52, a gas supply mechanism 53, and a gas supply source 54. The tip side of one pipe 52 is connected to each of the six bubble supply pipes 51. The base end side of the pipe 52 is connected to the gas supply source 54. Each pipe 52 is provided with a gas supply mechanism 53. In other words, one gas supply mechanism 53 is provided for each of the six bubble supply pipes 51. The gas supply source 54 delivers gas to each pipe 52. The gas supply mechanism 53 is equipped with a mass flow controller, an on-off valve, etc. (not shown), and supplies gas to the bubble supply pipes 51 via the pipes 52 and adjusts the flow rate of the gas supplied.

Figure 5 is a perspective view showing the appearance of the bubble supply pipe 51. While this figure shows one of the six bubble supply pipes 51, the other bubble supply pipes 51 have the same configuration. The bubble supply pipe 51 is a long tubular member. The bubble supply pipe 51 is made of, for example, PFA (perfluoroalkoxyalkane), PEEK (polyetheretherketone), or quartz (PFA is used in this embodiment). The bubble supply pipe 51 includes a main body 55 and a dielectric 60. In this embodiment, the main body 55 has a hollow rectangular prism shape. The hollow portion of the main body 55 is connected to the piping 52, and the gas supply mechanism 53 supplies gas to the internal space of the main body 55.

As shown in Figure 5, multiple inductors 60 are provided on both side surfaces (surfaces parallel to the YZ plane) of the main body 55, which has a rectangular prism shape extending in the Y direction. Each inductor 60 is a plate-like member shaped like a rectangular prism. The multiple inductors 60 are provided parallel to each other at equal intervals on the side surfaces of the main body 55, with their longitudinal directions aligned vertically (Z direction).

Figure 6 is an enlarged perspective view of the inductor 60. A circular air bubble hole 65 is formed in the inductor 60. The air bubble hole 65 is formed on one of the faces of the rectangular prism-shaped inductor 60 that is parallel to the YZ plane. The air bubble hole 65 is connected to the internal space of the main body 55. Therefore, the gas supplied from the gas supply mechanism 53 to the internal space of the main body 55 is expelled from the air bubble hole 65.

The overall length h of the inductor 60 is, for example, 8 mm. The width w of the inductor 60 is, for example, 1 mm. The thickness t of the inductor is, for example, 0.5 mm. The diameter of the circular air bubble hole 65 is, for example, 0.5 mm. The length l from the top end of the inductor 60 to the center of the air bubble hole 65 is, for example, 5 mm. In other words, the air bubble hole 65 is formed below the center of the inductor 60.

Figure 7 shows the positional relationship between multiple inductors 60 and substrates W. A lifter 20 holds multiple (e.g., 25 or 50) substrates W parallel to one another at regular intervals at an immersion position inside the processing bath 10. Meanwhile, multiple inductors 60 are also provided parallel to one another at regular intervals along the side of the rectangular prism-shaped main body 55. The holding intervals between the multiple substrates W (the distance between adjacent substrates W) are equal to the installation intervals between the multiple inductors 60 (the distance between adjacent inductors 60). Each of the multiple inductors 60 is installed so as to be positioned between adjacent substrates W held by the lifter 20. Therefore, bubbles formed by gas being discharged from the bubble holes 65 formed in the inductors 60 rise between the adjacent substrates W.

The control unit 70 controls the various operating mechanisms provided in the substrate processing apparatus 1. The hardware configuration of the control unit 70 is similar to that of a general computer. That is, the control unit 70 includes a CPU, which is a circuit that performs various arithmetic processing, a ROM, which is a read-only memory that stores basic programs, a RAM, which is a readable and writable memory that stores various information, and a storage unit (e.g., a magnetic disk) that stores control software, data, etc. The control unit 70 is electrically connected to the valve 37 of the processing liquid supply unit 30, the gas supply mechanism 53, etc.

The control unit 70 also stores a recipe (hereinafter referred to as the "processing recipe") that defines the procedures and conditions for processing the substrate W in its memory. The processing recipe is acquired by the substrate processing apparatus 1, for example, by an apparatus operator inputting it via a GUI and storing it in the memory. Alternatively, the processing recipe may be transferred via communication from a host computer that manages multiple substrate processing apparatuses 1 to the substrate processing apparatus 1 and stored in the memory. The control unit 70 controls the operation of the gas supply mechanism 53 and other components based on the description of the processing recipe stored in the memory, thereby causing the surface processing of the substrate W to proceed as described in the processing recipe.

Next, the processing operation of the substrate processing apparatus 1 having the above configuration will be described. In the substrate processing apparatus 1 of this embodiment, the processing liquid circulates by overflowing from the inner bath 11 of the processing bath 10 to the outer bath 12, and then flowing out from the outer bath 12 and returning to the inner bath 11. Specifically, the processing liquid flowing out from the outer bath 12 to the nozzle 31 is sent by the pump 33 to the nozzle 31. At this time, the processing liquid flowing through the pipe 32 is heated by the heater 34 as needed. The flow rate of the processing liquid flowing through the pipe 32 is regulated by the flow rate adjustment valve 36.

The processing liquid supplied to the nozzle 31 is ejected from the nozzle 31 upward into the inner tank 11. The processing liquid ejected from the nozzle 31 strikes the distribution plate 15 and spreads horizontally along the surface of the distribution plate 15. The processing liquid spread horizontally by the distribution plate 15 reaches the punched plate 17 and passes through multiple processing liquid holes 17a, rising from the processing liquid holes 17a and forming an upward laminar flow within the inner tank 11. The processing liquid that reaches the top of the inner tank 11 overflows and flows into the outer tank 12.

Substrates W are immersed in the processing liquid while a laminar flow of the processing liquid rising within the processing bath 10 is formed. Specifically, the lifter 20 receives multiple substrates W transported by a transport mechanism external to the apparatus at a lifting position above the processing bath 10. The substrates W are placed on three holding rods 21 and held by the lifter 20. The control unit 70 then operates the drive mechanism 24 to lower the lifter 20, lowering the substrates W to an immersion position within the processing bath 10 and immersing the substrates W in the processing liquid.

When a laminar flow of processing liquid is formed in the processing bath 10, the lifter 20 holds the substrates W in an immersion position, causing a laminar flow of processing liquid to flow between the substrates W, exposing the surfaces of the substrates W to the processing liquid, and surface processing of the substrates W (etching processing in this embodiment) progresses. Here, the flow velocity of the laminar flow of processing liquid formed by the distribution plate 15 and punching plate 17 is relatively slow. Therefore, the flow velocity of the processing liquid flowing along the surface of the substrate W is also not very fast, which reduces processing efficiency. For this reason, in this embodiment, bubbles are supplied into the processing liquid from the bubble supply unit 50.

The gas supply mechanism 53 of the bubble supply unit 50 supplies gas to the corresponding bubble supply pipe 51. The rectangular prism-shaped bubble supply pipe 51 has multiple bubble holes 65 on both sides for discharging bubbles (see Figure 5). The gas supplied to the bubble supply pipe 51 is discharged from the multiple bubble holes 65.

The bubble supply pipe 51 in this embodiment is made of PFA, which has a relatively large contact angle. Therefore, simply discharging gas from the bubble hole makes it difficult for the bubbles to leave the bubble hole, and multiple bubbles may coalesce to form large bubbles, resulting in significant variation in bubble size. Therefore, in this embodiment, an inductor 60 is provided in the bubble supply pipe 51.

Figure 8 shows how bubbles are ejected from the bubble hole 65. Gas supplied to the bubble supply pipe 51 is ejected from the bubble hole 65 formed in the induction device 60 to form bubbles BA. The formed bubbles BA rise along the surface of the induction device 60, which is erected vertically, as shown in Figure 8.

Figure 9 shows how a bubble BA leaves the induction device 60. The bubble BA is ejected from the bubble hole 65 and guided upward along the surface of the induction device 60, eventually reaching the top of the induction device 60. Once the bubble BA reaches the top of the induction device 60, it quickly leaves the corner at the top and is released into the treatment liquid. In other words, by providing the induction device 60 in the vertical direction, the bubble BA ejected from the bubble hole 65 is smoothly and quickly released into the treatment liquid, preventing multiple bubbles BA from combining to form giant bubbles.

Figure 10 shows how bubbles are discharged from multiple bubble supply pipes 51. The six bubble supply pipes 51 supply bubbles into the processing liquid stored in the processing bath 10 from below the substrate W held in the immersion position by the lifter 20. Because bubble holes 65 are provided on both sides of the rectangular pillar-shaped bubble supply pipe 51, bubbles are supplied from both side surfaces of the bubble supply pipe 51. In addition, because the multiple guides 60 are installed so as to be positioned between adjacent substrates W held by the lifter 20, bubbles discharged from the bubble supply pipes 51 rise between the adjacent substrates W. In other words, a large number of bubbles rise near the surfaces of the substrates W.

As described above, if no bubbles are supplied, the laminar flow of the processing liquid formed by the distribution plate 15 and punching plate 17 has a relatively slow flow rate. However, as numerous bubbles rise through the processing liquid along the surface of the substrate W, the flow rate of the processing liquid increases. By increasing the flow rate of the processing liquid near the surface of the substrate W, the surface processing efficiency of the substrate W improves, making it possible to increase the etching rate.

In particular, when the processing liquid is alkaline TMAH, the etching rate increases as the dissolved oxygen concentration in the processing liquid decreases. By supplying nitrogen bubbles into the processing liquid from multiple bubble supply pipes 51, the dissolved oxygen concentration in the processing liquid decreases, thereby increasing the etching rate of the substrate W.

After the etching process has been completed for a predetermined period of time, the processing liquid in the processing bath 10 is replaced with pure water, and the substrates W are rinsed with pure water. The control unit 70 then operates the drive mechanism 24 to raise the lifter 20 and lift the substrates W out of the processing bath 10. A transport mechanism external to the apparatus then receives the processed substrates W from the lifter 20. This completes the series of processes in the substrate processing apparatus 1.

In this embodiment, an upward laminar flow of processing liquid is formed inside the processing tank 10, and the substrate W is immersed in the processing liquid. Multiple bubble supply pipes 51 are arranged inside the processing tank 10, and these multiple bubble supply pipes 51 supply bubbles into the processing liquid stored in the processing tank 10 from below the substrate W held on the lifter 20. Multiple bubble holes 65 that discharge bubbles are formed on both sides of the bubble supply pipe 51, and a plate-shaped guide 60 is installed vertically above at least each bubble hole 65 to guide the bubbles discharged from the bubble hole 65 upward. As a result, bubbles discharged from the bubble hole 65 are guided by the guide 60 installed vertically and rise to be released into the processing liquid, allowing bubbles to easily detach from the bubble supply pipe 51 regardless of the contact angle of the material of the bubble supply pipe 51. As a result, multiple bubbles ejected from the bubble holes 65 are prevented from combining to form large bubbles, and variations in bubble size can be prevented.

The above describes an embodiment of the present invention, but various modifications other than those described above are possible without departing from the spirit of the invention. For example, in the above embodiment, the bubble supply pipe 51 including the derivative 60 was made of PFA, but this is not limited to this and the bubble supply pipe 51 may be made of other materials, such as PEEK or quartz. When using phosphoric acid as the treatment liquid, the treatment liquid is heated to a high temperature, so it is preferable to form the bubble supply pipe 51 from quartz, which has excellent heat resistance. However, since bubbles tend to detach easily with materials such as quartz, which have a relatively small contact angle, the effect of providing the derivative 60 is more apparent when the bubble supply pipe 51 is made of a material with a large contact angle, such as PFA.

In addition, while the bubble supply pipe 51 has a rectangular prism shape in the above embodiment, it is not limited to this. The bubble supply pipe 51 may have another polygonal prism shape (e.g., a hexagonal prism shape, an octagonal prism shape, etc.) or may be cylindrical. Even if the bubble supply pipe 51 has a cylindrical shape, the bubble supply pipe 51 is provided with a bubble hole 65, and a plate-shaped guide 60 is provided vertically at least above the bubble hole 65. In this way, bubbles ejected from the bubble hole 65 are guided by the guide 60, rise, and are released into the treatment liquid, achieving the same effect as the above embodiment. However, if the bubble supply pipe 51 has a rectangular prism shape, as in the above embodiment, the guide 60 can be easily provided along its side surface.

In addition, while in the above embodiment the inductor 60 was installed vertically, the inductor 60 may be installed at a slight incline from the vertical. Even in this case, the bubbles ejected from the bubble hole 65 are guided upward by the inductor 60, achieving the same effect as in the above embodiment.

Furthermore, the dimensions of the inductor 60 are not limited to the example in the above embodiment, and can be set to any appropriate value.

Furthermore, the number of bubble supply pipes 51 installed in the treatment tank 10 is not limited to six, but may be one or more.

Furthermore, in the above embodiment, etching was performed as the surface treatment of the substrate W using the treatment liquid, but this is not limited to this, and for example, the substrate W may also be cleaned using the treatment liquid.

REFERENCE SIGNS LIST 1 substrate processing apparatus 10 processing tank 11 inner tank 12 outer tank 15 dispersion plate 17 punching plate 20 lifter 30 processing liquid supply unit 31 nozzle 33 pump 50 air bubble supply unit 51 air bubble supply pipe 53 gas supply mechanism 60 induction device 65 air bubble hole 70 control unit 80 chemical liquid supply unit 90 pure water supply unit W substrate

Claims (3)

A substrate processing apparatus for performing surface treatment on a substrate using a processing liquid,
a processing tank for storing a processing liquid;
a processing liquid supply unit that supplies a processing liquid into the processing tank;
a substrate holder that holds a substrate and immerses the substrate in the processing solution stored in the processing tank;
a tubular bubble supply pipe disposed inside the processing tank and configured to supply bubbles from below the substrate held by the substrate holder to the processing liquid stored in the processing tank;
Equipped with
a plurality of bubble holes for discharging bubbles are provided on a side surface of the bubble supply pipe;
a plate-shaped guide for guiding upward the bubbles discharged from the bubble holes, the plate-shaped guide being provided above each of the plurality of bubble holes; 2. The substrate processing apparatus according to claim 1,
The substrate processing apparatus is characterized in that the plurality of bubble holes are provided on both sides of the bubble supply pipe. 3. The substrate processing apparatus according to claim 1,
The bubble supply pipe has a rectangular prism shape,
The substrate processing apparatus is characterized in that the guide is provided along a side surface of the bubble supply pipe.