JP7724449B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

This disclosure relates to a substrate processing apparatus and a substrate processing method.

Substrate processing apparatuses that etch substrates are known (see, for example, Patent Document 1). The substrate processing apparatus in Patent Document 1 includes an etching chamber, a stage located within the etching chamber on which the substrate is placed, and a temperature sensor located above the stage outside the etching chamber that measures the substrate temperature in a non-contact manner.

Special Publication No. 2008-527753

However, when measuring the substrate temperature during etching processing in a non-contact manner, it is not easy to achieve high measurement accuracy. This problem becomes more pronounced when there are multiple regions with different emissivity on the substrate surface (for example, when a mask is formed on part of the substrate surface). In such situations, one of the objectives of this disclosure is to provide a method for measuring the substrate temperature during processing with high accuracy.

One aspect of the present disclosure relates to a substrate processing apparatus. The substrate processing apparatus includes a processing chamber in which a substrate is processed, a stage disposed within the processing chamber on which the substrate is placed, a measurement window disposed opposite the stage, an infrared sensor disposed outside the measurement window and detecting infrared rays emitted from the substrate on the stage and transmitted through the measurement window, a measurement area adjustment unit that adjusts the measurement area of the infrared sensor, and a control unit that controls the measurement area adjustment unit. The substrate includes a first area where a first material that emits infrared rays is exposed, and a second area where a second material that has a lower infrared emissivity than the first material is exposed. The control unit controls the measurement area adjustment unit to adjust the measurement area so that the proportion of the first area included in the measurement area is within a reference range.

Another aspect of the present disclosure relates to a substrate processing method. The substrate processing method processes a substrate in a substrate processing apparatus including: a processing chamber in which a substrate is processed; a stage provided within the processing chamber and on which the substrate is placed; a measurement window provided opposite the stage; an infrared sensor provided outside the measurement window and detecting infrared rays emitted from the substrate on the stage and transmitted through the measurement window; and a measurement area adjustment unit that adjusts the measurement area of the infrared sensor. The substrate includes a first area in which a first material that emits infrared rays is exposed, and a second area in which a second material having an infrared emissivity lower than that of the first material is exposed, and the method includes the following steps: a first step of preparing a substrate to be placed on the stage; a second step of adjusting the measurement area by the measurement area adjustment unit so that the proportion of the first area included in the measurement area is within a reference range; and a third step of monitoring the temperature of the substrate during processing by the infrared sensor.

This disclosure makes it possible to measure substrate temperatures during processing with high accuracy.

1 is an overall view schematically illustrating an example of a substrate processing apparatus according to the present disclosure. FIG. 2 is a light path diagram schematically illustrating a main part of the substrate processing apparatus. 1A and 1B are diagrams showing a substrate to be processed, in which FIG. 1A is a plan view of the substrate, and FIG. 1B is a cross-sectional view taken along line BB.

Embodiments of a substrate processing apparatus and a substrate processing method according to the present disclosure are described below using examples. However, the present disclosure is not limited to the examples described below. While the following description may use specific numerical values and materials, other numerical values and materials may also be applied as long as the effects of the present disclosure are achieved.

(Substrate processing apparatus)
A substrate processing apparatus according to the present disclosure is an apparatus for processing a substrate in a processing chamber, and includes a processing chamber, a stage, a measurement window, an infrared sensor, a measurement area adjustment unit, and a control unit.

The processing chamber is where the substrate is processed. The substrate processing may be, for example, an etching process or a cleaning process using plasma. The substrate etching process may be singulating the substrate. The processing chamber may be provided with an inlet for introducing raw material gases for generating plasma. The processing chamber may be provided with an outlet for discharging raw material gases after they have been used in the processing.

The substrate includes a first region and a second region. In the first region, a first material (e.g., resin) that emits infrared rays is exposed. In the second region, a second material (e.g., a semiconductor containing silicon (Si)) that has a lower infrared emissivity than the first material is exposed. The first region may be, for example, an element region of the substrate. The second region may be, for example, a divided region of the substrate that defines the element region. The divided region is also called a street. Note that emissivity is a dimensionless quantity that represents the ease of heat radiation from an object, with a value greater than or equal to 0 and less than or equal to 1.

The stage is provided within the processing chamber. A substrate is placed on the stage. The stage may be provided at the bottom of the processing chamber. A fixing device (e.g., an electrostatic adsorption mechanism) for fixing the substrate may be provided on the stage. A coolant flow path may be formed in the stage, through which a coolant flows to adjust the substrate temperature.

The measurement window is provided at a position facing the stage. The measurement window may be provided above the stage, particularly above the area of the stage where the substrate is placed. The measurement window may be made of a material that transmits infrared rays (e.g., calcium fluoride).

The infrared sensor is provided outside the measurement window (e.g., above the measurement window). The infrared sensor detects infrared radiation emitted from the substrate on the stage and passing through the measurement window. The infrared sensor may have a sensor element that detects infrared radiation and a lens that focuses the incident infrared radiation onto the sensor element. The infrared sensor may be an infrared sensor that is highly sensitive to mid-infrared radiation with a wavelength of approximately 3 to 8 μm. The infrared sensor may calculate the substrate temperature from the detected infrared radiation based on the emissivity set according to the substrate material, etc., and output the substrate temperature. The detected value of the infrared sensor may be input to a control unit. The control unit may convert the input detected value into substrate temperature information based on the emissivity set according to the substrate material, etc.

The measurement area adjustment unit adjusts the measurement area of the infrared sensor. The measurement area refers to the area of the substrate to be measured that is optically observed by the infrared sensor. In that sense, the measurement area of the infrared sensor can also be referred to as the field of view of the infrared sensor. Similarly, the measurement area adjustment unit can also be referred to as a field of view adjustment unit that adjusts the field of view of the infrared sensor. The shape of the measurement area may be, for example, circular. Adjusting the measurement area refers to at least one of adjusting the size of the measurement area and adjusting the position of the measurement area.

The control unit controls the measurement area adjustment unit. The control unit may also control other components of the substrate processing apparatus. The control unit may have a computing device and a storage device that stores a program executable by the computing device.

Specifically, the control unit controls the measurement area adjustment unit to adjust the measurement area of the infrared sensor so that the proportion of the first area of the substrate included in the measurement area falls within a reference range. The proportion of the first area included in the measurement area is, for example, the value given by A (unit: %) when the area of the measurement area is 100 and the area of the first area included in the measurement area is A (≦100). The reference range is the preferred range of the proportion of the first area included in the measurement area for measuring the substrate temperature. The reference range may be, for example, 60% or more and 100% or less, or 70% or more and 100% or less.

The significance of keeping the proportion of the first region included in the measurement area within the above-mentioned standard range will be explained. Specifically, the first region of the substrate emits more infrared light per unit area than the second region of the substrate. The infrared light emitted from the substrate is the source of the signal in the infrared sensor. Meanwhile, the main source of noise in the infrared sensor is infrared light (thermal noise) generated from sources other than the substrate within the substrate processing apparatus. The higher the proportion of the first region included in the measurement area, the higher the proportion of signals derived from infrared light from the substrate included in the infrared sensor's detection signal (the higher the S/N ratio). This makes it possible to measure the substrate temperature during processing with greater accuracy. This also makes it possible to appropriately handle cases where different types of substrates are processed or where misalignment occurs between substrates during continuous processing.

The measurement area adjustment unit may have a field-of-view adjustment lens or field-of-view adjustment aperture located between the measurement window and the infrared sensor. The field-of-view adjustment lens may be, for example, a convex lens or a concave lens.

The field-of-view adjusting lens or field-of-view adjusting aperture may be movable between the measurement window and the infrared sensor. For example, by moving them away from the infrared sensor, the measurement area of the infrared sensor can be made smaller, or by moving them closer to the infrared sensor, the measurement area of the infrared sensor can be made larger.

The measurement area adjustment unit may have multiple types of field adjustment lenses, each of which can be used independently and switched. There must be two or more types of such field adjustment lenses, and the type of lens does not matter. The multiple types of field adjustment lenses may be, for example, convex lenses and concave lenses. In this case, by switching the field adjustment lens from a convex lens to a concave lens, the measurement area of the infrared sensor can be enlarged, while by switching it the other way around, the measurement area of the infrared sensor can be reduced. However, the measurement area adjustment unit may have only one type of field adjustment lens.

The measurement area adjustment unit may have a position change mechanism that changes the relative position between the substrate on the stage and the infrared sensor along the in-plane direction of the substrate. By changing the relative position in this way, the measurement area of the infrared sensor can be moved relative to the substrate. One advantage of this is that, for example, it becomes possible to move the measurement area from an area on the substrate where first areas (areas with relatively high infrared emissivity) are distributed in small numbers to an area where first areas are distributed in large numbers. The position change mechanism may change the position of the stage, or the position of the infrared sensor, or it may do both.

The measurement window may contain calcium fluoride, barium fluoride, magnesium fluoride, strontium fluoride, or sapphire. These materials have refractive indices close to that of the atmosphere, so there is little Fresnel reflection when infrared light passes through them. This allows more infrared light emitted from the substrate to be incident on the infrared sensor, improving the accuracy of measuring the substrate temperature. The measurement window may be, for example, a single plate made of one of these materials, or a composite plate containing these materials.

The device may further include a temperature adjustment unit that adjusts the temperature of the measurement window and is controlled by the control unit. The temperature adjustment unit may be, for example, a heater that heats the measurement window. By heating the measurement window, the refractive index of the measurement window approaches that of the atmosphere, thereby suppressing Fresnel reflection when infrared light passes through the measurement window.

The control unit may cause the temperature adjustment unit to adjust the temperature of the measurement window so that it falls within a target range. If no countermeasures are taken during substrate processing, the temperature of the measurement window will fluctuate, and its refractive index will also fluctuate. Fluctuations in the refractive index of the measurement window cause fluctuations in the degree of Fresnel reflection, which in turn fluctuates the amount of infrared light that passes through the measurement window and enters the infrared sensor. In other words, fluctuations in the temperature of the measurement window will cause fluctuations in the measured substrate temperature detected by the infrared sensor. On the other hand, by controlling the temperature of the measurement window within a target range, such fluctuations in the measured value can be suppressed. The target range may be, for example, 40°C or higher and 70°C or lower, or 40°C or higher and 60°C or lower.

The substrate processing apparatus may be a plasma processing apparatus that processes substrates using plasma. The plasma processing apparatus may be, for example, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus. In this case, the substrate during plasma processing is controlled to a relatively low temperature, for example, below 150°C. However, it is difficult to measure the substrate temperature non-contact and with high accuracy while processing using plasma at such a relatively low temperature. In contrast, the technology disclosed herein makes it possible to measure the substrate temperature non-contact and with high accuracy during processing using low-temperature plasma.

The first material may be a resin. The second material may be a semiconductor containing Si, GaAs, GaN, or SiC. The resin may be, for example, a resist mask that covers the device region of the substrate. Resin is a material with a higher infrared emissivity than semiconductors containing Si, GaAs, GaN, or SiC. Therefore, by increasing the proportion of the first region where the resin is exposed in the measurement region, the accuracy of measuring the substrate temperature during processing can be improved.

(Substrate Processing Method)
A substrate processing method according to the present disclosure is a method for processing a substrate in the substrate processing apparatus described above. The substrate processing method includes a first step, a second step, and a third step.

In the first step, a substrate is prepared that includes a first region and a second region and is placed on a stage. A first material (e.g., a resin) that emits infrared rays is exposed in the first region. A second material (e.g., a semiconductor containing silicon (Si)) that has a lower infrared emissivity than the first material is exposed in the second region. The first region may be, for example, an element region of the substrate. The second region may be, for example, a divided region of the substrate that defines the element region.

In the second step, the measurement area adjustment unit adjusts the measurement area of the infrared sensor so that the proportion of the first area included in the measurement area falls within a reference range. The reference range may be, for example, 60% or more and 100% or less, or 70% or more and 100% or less.

In the third step, the temperature of the substrate being processed is monitored using an infrared sensor. When monitoring the temperature, it is desirable to use an infrared sensor to detect infrared rays on a calibration substrate, the proportion of the first region in the measurement region of which is within a reference range and the actual temperature of which is known, and to set the emissivity so that the temperature calculated from the detected value matches the actual temperature. In the second step, the proportion of the first region included in the measurement region is within the reference range, which increases the S/N ratio of the infrared sensor and enables highly accurate monitoring of the substrate temperature during processing. By feeding back this substrate temperature, the substrate temperature during processing can be controlled with high precision.

The substrate processing apparatus may be a plasma processing apparatus. In the third step, the substrate may be processed using plasma generated in the processing chamber. This processing may be, for example, a plasma etching process.

In the third step, the substrate temperature may be controlled to 150°C or less. Such control may be achieved, for example, by treating the substrate using low-temperature plasma.

The first material may be a resin. The second material may be a semiconductor containing Si, GaAs, GaN, or SiC. The resin may be, for example, a resist mask that covers the device region of the substrate. Resin is a material with a higher infrared emissivity than semiconductors containing Si, GaAs, GaN, or SiC. Therefore, by increasing the proportion of the first region where the resin is exposed in the measurement region, the accuracy of monitoring the substrate temperature during processing can be improved.

As described above, according to the present disclosure, by increasing the S/N ratio of the infrared sensor, it is possible to measure the substrate temperature during processing with high accuracy. Furthermore, according to the present disclosure, it is possible to measure the substrate temperature with high accuracy without contact during processing using low-temperature plasma.

Below, an example of a substrate processing apparatus and substrate processing method according to the present disclosure will be described in detail with reference to the drawings. The components and steps described above can be applied to the components and steps of the example substrate processing apparatus and substrate processing method described below. The components and steps of the example substrate processing apparatus and substrate processing method described below can be modified based on the above description. Furthermore, the matters described below may be applied to the above embodiment. Of the components and steps of the example substrate processing apparatus and substrate processing method described below, components and steps that are not essential to the substrate processing apparatus and substrate processing method according to the present disclosure may be omitted. Note that the diagrams shown below are schematic and do not accurately reflect the shapes and number of actual components.

(Substrate processing apparatus)
1, the substrate processing apparatus 10 is a plasma processing apparatus for plasma processing a substrate 20 in a processing chamber 11. The substrate processing apparatus 10 in this example is a plasma processing apparatus that plasma processes the substrate 20 at 150° C. or less (e.g., 50° C. or more and 80° C. or less). The substrate processing apparatus 10 includes the processing chamber 11, a stage 12, a measurement window 13, an infrared sensor 14, a measurement area adjustment unit 15, a control unit 16, and a temperature adjustment unit 17.

The processing chamber 11 is where the substrate 20 is plasma processed. The sidewalls of the processing chamber 11 are made of a conductive material (e.g., a metal such as aluminum) and are grounded to earth potential. The processing chamber 11 has a guide pipe 11a that protrudes upward from its top surface. The guide pipe 11a guides infrared rays emitted from the substrate 20 to the measurement window 13. The top of the processing chamber 11 is closed by a lid made of a dielectric material. A heater (not shown) is provided near the lid to heat the lid and control its temperature.

When performing plasma processing, raw material gas is supplied into the processing chamber 11 from an inlet (not shown), and high-frequency power is applied to an induction coil (not shown) installed near the guide pipe 11a. The raw material gas source (not shown) that supplies the raw material gas and the induction coil constitute a plasma generation unit that generates plasma within the processing chamber 11. During plasma processing, the interior of the processing chamber 11 is maintained at a reduced pressure (e.g., 0.5 Pa or more and 30 Pa or less) by an exhaust device (neither shown) connected to the exhaust port.

The stage 12 is located at the bottom of the processing chamber 11. The substrate 20 to be processed is placed on the stage 12. The stage 12 is equipped with an electrostatic adsorption mechanism (not shown) for adsorbing and fixing the substrate 20. The substrate 20 may also be fixed by mechanical means such as a clamp. The stage 12 is formed with a coolant flow path (not shown) through which a coolant flows to cool the substrate 20. In this example, the stage 12 is movable within a horizontal plane, but this is not limited to this. For example, the stage 12 may be a fixed stage.

The measurement window 13 is provided at a position facing the stage 12, above the stage 12 in this example. The measurement window 13 is provided at the upper end of the guide pipe 11a. The measurement window 13 is made of a single plate of calcium fluoride, but is not limited to this. For example, the measurement window 13 may be made of a single plate of barium fluoride, magnesium fluoride, strontium fluoride, or sapphire, or may be made of a composite plate containing at least one of calcium fluoride, barium fluoride, magnesium fluoride, strontium fluoride, and sapphire.

The infrared sensor 14 is provided outside the measurement window 13, above the measurement window 13 in this example. The infrared sensor 14 detects infrared rays emitted from the substrate 20 on the stage 12 and passing through the measurement window 13. The infrared sensor 14 has a sensor element that detects infrared rays and a lens that focuses the incident infrared rays onto the sensor element (both not shown). The infrared sensor is a mid-infrared sensor, but is not limited to this. The detection value (detection signal) of the infrared sensor 14 is input to the control unit 16. The control unit 16 converts the input detection value into information about the substrate temperature.

The measurement area adjustment unit 15 adjusts the measurement area MR of the infrared sensor 14. The measurement area adjustment unit 15 has two types of field adjustment lenses 15a, 15b arranged between the measurement window 13 and the infrared sensor 14. One of the field adjustment lenses 15a (first field adjustment lens 15a) is composed of a convex lens. The other field adjustment lens 15b (second field adjustment lens 15b) is composed of a concave lens. The first field adjustment lens 15a and the second field adjustment lens 15b are switched between and used independently. The first field adjustment lens 15a and the second field adjustment lens 15b can each move up and down between the measurement window 13 and the infrared sensor 14. The measurement area adjustment unit 15 is controlled by the control unit 16, and changes the size of the measurement area MR of the infrared sensor 14 by moving the first field adjustment lens 15a and the second field adjustment lens 15b up and down.

The effect of using the first field-of-view adjustment lens 15a will now be explained with reference to Figure 2. In Figure 2, the edges of the optical path when the first field-of-view adjustment lens 15a is not used are shown by dashed lines, and the edges of the optical path when the first field-of-view adjustment lens 15a is used are shown by solid lines. Note that the edges of the optical path are also shown by solid lines in the area where the two overlap. As shown in Figure 2, when the first field-of-view adjustment lens 15a is used, the measurement region MR of the infrared sensor 14 is smaller than when it is not used. The size of the measurement region MR can be adjusted by moving the first field-of-view adjustment lens 15a up and down (in the optical axis direction). On the other hand, although not shown, when the second field-of-view adjustment lens 15b is used, the measurement region MR of the infrared sensor 14 is larger than when it is not used.

The measurement area adjustment unit 15 has a position change mechanism 15c that changes the relative position between the substrate 20 on the stage 12 and the infrared sensor 14 along the in-plane direction of the substrate 20 (the left-right direction in FIG. 1 and the direction perpendicular to the paper surface). The position change mechanism 15c may include a motor (not shown) that moves the stage 12 along the in-plane direction. In this example, the position change mechanism 15c is controlled by the control unit 16 and changes the relative position by changing the position of the stage 12 within the horizontal plane. The position change mechanism 15c changes the position of the measurement area MR of the infrared sensor 14 (its position relative to the substrate 20) through such a change in the stage position. The position change mechanism 15c may, for example, relatively move the measurement area MR from an area of the substrate 20 where the first area R1 is less distributed (e.g., an area near the intersection of the divided areas) to an area where the first area R1 is more distributed (e.g., an area near the center of the element area).

The control unit 16 controls the measurement area adjustment unit 15. The control unit 16 also controls other components of the substrate processing apparatus 10 (e.g., the plasma generation unit and the temperature adjustment unit 17). The control unit 16 has a calculation unit and a storage device that stores programs that can be executed by the calculation unit (both not shown).

As shown in FIG. 3, the substrate 20 includes a first region R1 (in this example, the element region) and a second region R2 (in this example, the dividing region). In the first region R1, a first material (in this example, a plasma-resistant resin) that emits infrared rays is exposed. In the second region R2, a second material (in this example, silicon) that has a lower infrared emissivity than the first material is exposed. Such a substrate 20 can be obtained, for example, by laser patterning a substrate having a circuit layer 22 and a resin layer (resist layer) 23 formed on a silicon layer 21. Note that in FIG. 3, an example of a preferred measurement region MR is indicated by a dashed line, and an example of a less preferred measurement region (for example, the measurement region without the first field-of-view adjustment lens 15a) is indicated by a two-dot chain line.

The control unit 16 controls the measurement area adjustment unit 15 to adjust the measurement area MR of the infrared sensor 14 so that the proportion of the first area R1 included in the measurement area MR is within a reference range (in this example, 70% or more and 100% or less) (hereinafter also referred to as condition A).

Specifically, the control unit 16 adjusts the vertical position of the first field-of-view adjusting lens 15a or the second field-of-view adjusting lens 15b, thereby causing the measurement area adjusting unit 15 to adjust the measurement area MR so as to satisfy condition A. Alternatively or additionally, the control unit 16 may adjust the horizontal position of the stage 12, thereby causing the position changing mechanism 15c of the measurement area adjusting unit 15 to adjust the measurement area MR so as to satisfy condition A. In combination with these adjustments, the control unit 16 may switch between the first field-of-view adjusting lens 15a and the second field-of-view adjusting lens 15b.

If condition A cannot be met even after making the various adjustments described above, emissivity correction of the infrared sensor 14 may be performed. The emissivity correction may be, for example, a correction of the emissivity according to the amount of deviation from condition A of the proportion of the first region R1 included in the measurement region MR of the infrared sensor 14. This emissivity correction may be performed as needed even if condition A is met.

The temperature adjustment unit 17 adjusts the temperature of the measurement window 13 and is controlled by the control unit 16. The temperature adjustment unit 17 has a heater 17a provided near the measurement window 13. The heater 17a may be formed in a ring shape that surrounds the outer periphery of the measurement window 13. The control unit 16 causes the temperature adjustment unit 17 to adjust the temperature of the measurement window 13 so that the temperature of the measurement window 13 is within a target range (in this example, not less than 40°C and not more than 60°C). The control unit 16 may also cause the temperature adjustment unit 17 to adjust the temperature of the measurement window 13 so that the temperature of the measurement window 13 approaches a target temperature (e.g., 50°C) or is maintained at the target temperature.

(Substrate Processing Method)
The substrate processing method is a method for processing the substrate 20 in the substrate processing apparatus 10 described above, and includes a first step, a second step, and a third step.

In the first step, a substrate 20 is prepared that includes a first region R1 (in this example, the element region) and a second region R2 (in this example, the dividing region) and is placed on the stage 12. A first material that emits infrared rays (in this example, a plasma-resistant resin) is exposed in the first region R1. A second material (in this example, silicon) that has a lower infrared emissivity than the first material is exposed in the second region R2. Such a substrate 20 may be prepared, for example, by patterning a substrate having a circuit layer 22 and a resin layer (resist layer) 23 formed on a silicon layer 21 using laser processing.

In the second step, the measurement area MR of the infrared sensor 14 is adjusted by the measurement area adjustment unit 15 so that the proportion of the first region R1 included in the measurement area MR is within a reference range (in this example, 70% or more and 100% or less) (condition A).

Specifically, in the second step, the measurement area adjustment unit 15 adjusts the measurement area MR by adjusting the vertical position of the first field-of-view adjustment lens 15a or the second field-of-view adjustment lens 15b so as to satisfy condition A. Alternatively or additionally, in the second step, the measurement area MR may be adjusted by the position change mechanism 15c of the measurement area adjustment unit 15 by adjusting the horizontal position of the stage 12 so as to satisfy condition A. In combination with these adjustments, the second step may involve switching between the first field-of-view adjustment lens 15a and the second field-of-view adjustment lens 15b.

In the second step, if condition A cannot be met even after making the various adjustments described above, the emissivity of the infrared sensor 14 may be corrected. This emissivity correction may be performed as necessary even if condition A is met.

In the third step, the temperature of the substrate 20 being processed is monitored by the infrared sensor 14. In this example, the processing of the substrate 20 in the third step is a plasma etching process using plasma generated in the processing chamber 11. In the third step, the second region R2 of the substrate is etched using plasma while the substrate temperature is controlled to, for example, 150°C or less (e.g., 50°C or more and 80°C or less). The third step can be one step in a manufacturing method for producing multiple electronic components or element chips including the first region R1.

This disclosure can be used in substrate processing apparatuses and substrate processing methods.

10: Substrate processing apparatus 11: Processing chamber 11a: Guide pipe 12: Stage 13: Measurement window 14: Infrared sensor 15: Measurement area adjustment unit 15a: First field of view adjustment lens (field of view adjustment lens)
15b: Second field of view adjusting lens (field of view adjusting lens)
15c: Position changing mechanism 16: Control unit 17: Temperature adjustment unit 17a: Heater 20: Substrate 21: Silicon layer 22: Circuit layer 23: Resin layer R1: First region R2: Second region MR: Measurement region

Claims (14)

a processing chamber in which the substrate is processed;
a stage provided in the processing chamber and on which the substrate is placed;
a measurement window provided at a position facing the stage;
an infrared sensor provided outside the measurement window, for detecting infrared rays emitted from the substrate on the stage and transmitted through the measurement window;
a measurement area adjustment unit that adjusts the measurement area of the infrared sensor;
a control unit that controls the measurement area adjustment unit;
Equipped with
the substrate includes a first region in which a first material that emits infrared rays is exposed, and a second region in which a second material that has a lower infrared emissivity than the first material is exposed;
The control unit controls the measurement area adjustment unit to adjust the measurement area so that the proportion of the first area included in the measurement area falls within a reference range. The substrate processing apparatus of claim 1, wherein the measurement area adjustment unit has a field-of-view adjustment lens or field-of-view adjustment aperture provided between the measurement window and the infrared sensor. The substrate processing apparatus of claim 2, wherein the field-of-view adjusting lens or the field-of-view adjusting aperture is movable between the measurement window and the infrared sensor. The substrate processing apparatus of claim 2 or 3, wherein the measurement area adjustment unit has multiple types of field adjustment lenses that are each used independently and switchable. The substrate processing apparatus of any one of claims 1 to 4, wherein the measurement area adjustment unit has a position change mechanism that changes the relative position between the substrate on the stage and the infrared sensor along the in-plane direction of the substrate. The substrate processing apparatus of any one of claims 1 to 5, wherein the measurement window contains calcium fluoride, barium fluoride, magnesium fluoride, strontium fluoride, or sapphire. The substrate processing apparatus of any one of claims 1 to 6, further comprising a temperature adjustment unit that adjusts the temperature of the measurement window and is controlled by the control unit. The substrate processing apparatus of claim 7, wherein the control unit controls the temperature adjustment unit to adjust the temperature of the measurement window so that the temperature of the measurement window is within a target range. The substrate processing apparatus according to any one of claims 1 to 8, wherein the substrate processing apparatus is a plasma processing apparatus that processes the substrate at 150°C or less using plasma. the first material is a resin,
10. The substrate processing apparatus according to claim 1, wherein the second material is a semiconductor containing Si, GaAs, GaN, or SiC. a processing chamber in which the substrate is processed;
a stage provided in the processing chamber and on which the substrate is placed;
a measurement window provided at a position facing the stage;
an infrared sensor provided outside the measurement window, for detecting infrared rays emitted from the substrate on the stage and transmitted through the measurement window;
a measurement area adjustment unit that adjusts the measurement area of the infrared sensor;
A substrate processing method for processing a substrate in a substrate processing apparatus, comprising:
a first step of preparing a substrate to be placed on the stage, the substrate including a first region where a first material that emits infrared rays is exposed and a second region where a second material that has a lower infrared emissivity than the first material is exposed;
a second step of adjusting the measurement area by the measurement area adjusting unit so that the proportion of the first area included in the measurement area falls within a reference range;
a third step of monitoring the temperature of the substrate during processing with the infrared sensor;
A substrate processing method comprising: the substrate processing apparatus is a plasma processing apparatus,
12. The substrate processing method according to claim 11, wherein in the third step, the substrate is processed by plasma generated in the processing chamber. The substrate processing method described in claim 11 or 12, wherein the temperature of the substrate is controlled to 150°C or less in the third step. the first material is a resin,
14. The substrate processing method according to claim 11, wherein the second material is a semiconductor containing Si, GaAs, GaN, or SiC.