JP7725614B2 - High-temperature susceptor with fast heat dissipation capability - Google Patents

Description

Embodiments of the present disclosure relate to susceptors, such as susceptors used in connection with substrate processing systems, and particularly to susceptors used in high-temperature applications.

In substrate processing and other electronics processes, processing chambers are used to perform substrate processing operations. The temperature of the substrate in the processing chamber must be controlled to avoid defects.

The following is a simplified summary of the present disclosure to provide a basic understanding of some aspects of the disclosure. This summary is not an exhaustive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure, nor is it intended to delineate any scope of particular embodiments of the disclosure or any scope of the claims. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description presented later.

In one aspect of the present disclosure, a substrate support assembly includes a cooling plate forming one or more channels configured to receive a heat transfer fluid. The substrate support assembly further includes a gas distribution plate disposed on the cooling plate. The gas distribution plate forms an interior volume configured to receive a gas. The substrate support assembly further includes a heating plate disposed on the gas distribution plate. The heating plate includes a resistive heater. The substrate support assembly further includes an electrostatic chuck disposed on the heating plate. The electrostatic chuck is configured to support a substrate within a processing chamber.

In another aspect of the present disclosure, a system includes a substrate support assembly disposed within a processing chamber. The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. The system further includes a controller. The controller is for flowing a heat transfer fluid through one or more channels formed by the cooling plate. The controller is further for flowing gas through the gas distribution plate to openings formed by the heating plate and from the openings in the heating plate to a location between an upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly. The controller is further for causing a resistive heater disposed in the heating plate to heat the heating plate.

In another aspect of the present disclosure, a method includes flowing a heat transfer fluid through one or more channels formed by a cooling plate of a substrate support assembly. The method further includes flowing a gas through a gas distribution plate of the substrate support assembly disposed on the cooling plate, through openings formed in a heating plate of the substrate support assembly disposed on the cooling plate, and to a location between an upper surface of the substrate support assembly and a substrate disposed in a processing chamber of the substrate support assembly. In response to the processing chamber being idle, the method further includes causing a resistive heater disposed in the heating plate to heat the heating plate.

The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals indicate similar elements. It should be noted that different references to "an" or "one" embodiment in this disclosure are not necessarily to the same embodiment, but that such references mean at least one.

1 illustrates a substrate support assembly in accordance with certain embodiments. 1A-1C illustrate components of a substrate support assembly, in accordance with certain embodiments. 1A-1C illustrate components of a substrate support assembly, in accordance with certain embodiments. 1A-1C illustrate components of a substrate support assembly, in accordance with certain embodiments. 1A-1C illustrate components of a substrate support assembly, in accordance with certain embodiments. 1A-1C illustrate components of a substrate support assembly, in accordance with certain embodiments. 1A-1C illustrate components of a substrate support assembly, in accordance with certain embodiments. 10A-10C illustrate a method of using a substrate support assembly, in accordance with certain embodiments.

Embodiments described herein relate to high-temperature susceptors (e.g., substrate support assemblies) with rapid heat removal capabilities. The high-temperature susceptors can be configured for use at temperatures between about 300 and about 400 degrees Celsius. The high-temperature susceptors can be configured to absorb heat during substrate processing (e.g., plasma operation) up to about 350 and about 400 degrees Celsius.

A substrate processing system is used to process substrates. The substrate is transferred into a processing chamber via a robot (e.g., a transfer chamber robot). The processing chamber is sealed, and a substrate processing operation (e.g., chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced CVD (PECVD), plasma-enhanced ALD (PEALD), etching, etc.) is performed on the substrate. The temperature of the substrate should be controlled before, during, and after the substrate processing operation. Failure to control the substrate temperature can result in substrate defects, inconsistent substrate performance, reduced yield, etc.

In conventional systems, a susceptor is used to support the substrate and attempt to control the temperature of the substrate. When a plasma is formed above the substrate in the processing chamber, the plasma dissipates a large amount of heat, and conventional susceptors are not able to remove the heat quickly enough to prevent the substrate from overheating. Some conventional susceptors have a heating component and a cooling component, and the cooling component removes the thermal energy created by the heating component.

The components, systems, and methods disclosed herein provide high-temperature susceptors with rapid heat removal capabilities.

The substrate support assembly (e.g., a susceptor) is configured to support a substrate (e.g., glass, display, wafer, semiconductor) in a processing chamber (e.g., of a substrate processing system). The substrate support assembly includes a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate. The electrostatic chuck is disposed on (or is part of) the heating plate. The electrostatic chuck is configured to support a substrate (e.g., the substrate is disposed on an upper surface of the electrostatic chuck, and the electrostatic chuck secures the substrate to the substrate support assembly via electrostatic forces).

The cooling plate forms one or more channels for receiving a heat transfer fluid. The gas distribution plate forms an interior volume configured to receive a gas (e.g., helium, argon, etc.). In some embodiments, the heating plate includes a resistive heater (e.g., an electric heater).

A controller (e.g., coupled to the substrate support assembly) determines whether the processing chamber is idle (e.g., not performing a substrate process operation) or active (e.g., performing a substrate process operation). In some embodiments, the controller determines whether the processing chamber is idle or active based on temperature data received from a sensor associated with the substrate support assembly (e.g., positioned proximate to the substrate, positioned proximate to the electrostatic chuck, positioned proximate to the top surface of the substrate support assembly). In response to the temperature data satisfying a first threshold temperature, the controller determines that the processing chamber is in an idle state. In response to the temperature data satisfying a second threshold temperature, the controller determines that the processing chamber is in an active state. In response to determining that the processing chamber is in an idle state, the controller may cause the resistive heater to heat the heating plate (e.g., and the substrate). In response to determining that the processing chamber is in an active state, the controller may prevent the resistive heater from heating the heating plate, and in some embodiments, flow a heat transfer fluid through the cooling plate to cool the substrate. In some embodiments, the controller constantly flows the heat transfer fluid through the cooling plate. The gas distribution plate provides a buffer (e.g., a temperature gradient, a thermal choke) between the cooling plate and the heating plate. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is about 50 degrees Celsius to about 200 degrees Celsius. In some embodiments, the temperature gradient between the resistive heater and the heat transfer fluid is about 50 degrees Celsius to about 100 degrees Celsius. In some examples, the heat transfer fluid is about 200 degrees Celsius to about 300 degrees Celsius and the heating plate is about 300 degrees Celsius to about 400 degrees Celsius.

The components, systems, and methods disclosed herein have advantages over conventional solutions. The substrate support assemblies of the present disclosure are configured for use at high temperatures (e.g., about 300 to about 400 degrees Celsius) compared to conventional solutions configured for use at lower temperatures. The substrate support assemblies of the present disclosure are configured to heat a substrate to a high temperature (e.g., about 300 to about 400 degrees Celsius) and maintain the substrate at a high temperature during substrate processing (e.g., cool the substrate to substantially the same temperature) compared to conventional solutions that do not heat the substrate to a high temperature and maintain (e.g., cool) the substrate at that temperature during substrate processing. The substrate support assemblies of the present disclosure can provide more precise control of substrate temperature (e.g., improved substrate temperature uniformity and control within 10 degrees Celsius before, during, and after substrate processing) compared to conventional solutions. The substrate support assembly of the present disclosure provides a buffer (e.g., thermal choke) between the cooling plate and the heating plate, allowing the heat transfer fluid to be at a lower temperature (e.g., more efficient, less energy consuming) without removing the thermal energy provided by the resistive heater in the heating plate. The substrate support assembly of the present disclosure results in fewer substrate defects, more consistent substrate performance, and improved yield compared to conventional solutions.

Although some embodiments of the present disclosure describe the use of resistive heaters (e.g., electric heaters) within the heating plate, other embodiments may use one or more other types of heaters within the heating plate, such as one or more of a heat transfer fluid, a solid-state cooling device (e.g., a Peltier device, a Peltier heater, a Peltier heat pump, a thermal battery, a thermoelectric heat pump, etc.), etc.

Figure 1 illustrates a substrate support assembly 100, according to some embodiments. In some embodiments, the substrate support assembly 100 includes one or more of an electrostatic chuck, a vacuum chuck, a susceptor, a workpiece support surface, or the like. In some embodiments, the substrate support assembly 100 chucks (e.g., secures) a substrate to the upper surface of the susceptor body 110 (e.g., ensures contact with the susceptor body 110, provides uniform contact, etc.). The substrate may refer to a wafer, a semiconductor, glass, a glass substrate, an electronic device, a glass device, a display device, etc.

In some embodiments, the substrate support assembly 100 is disposed in a processing chamber, such as a plasma processing chamber, an annealing chamber, a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an ion implantation chamber, an etching chamber, a deposition chamber (e.g., an atomic layer deposition (ALD) chamber, a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, and/or plasma-enhanced (PE) versions thereof, such as PEALD, PECVD, PEPVD, etc.), an annealing chamber, etc. In some embodiments, the processing chamber has a high-density plasma (HDP) source with a high temperature (e.g., greater than 350 degrees Celsius) to impart a large amount of heat to the substrate. Traditionally, a large amount of heat increases the substrate temperature, which creates problems for the substrate (e.g., problems for devices on glass). To precisely control the substrate temperature, a substrate support assembly 100 (e.g., susceptor body 110) including a resistive heater and a heat transfer fluid (e.g., a high temperature heat transfer fluid) is used to heat the substrate and remove a large amount of heat from the plasma source (e.g., to maintain the substrate at a substantially constant temperature) to maintain the set temperature of the substrate.

The substrate support assembly 100 may have both heating and cooling capabilities, operating at high temperatures (e.g., via an internal heater such as the resistive heater 122) and capable of dissipating large amounts of external heat within a short period of time (e.g., via a flow of coolant). The substrate support assembly (e.g., a susceptor) may be used to support and control the temperature of the substrate. When a plasma forms above the substrate, the plasma may dissipate large amounts of heat. The substrate support assembly quickly dissipates the heat to prevent overheating of the substrate. The present disclosure may combine a heating element (e.g., the resistive heater 122) and a heat transfer fluid channel (e.g., the channel 142) within a single body (e.g., the susceptor body 110). A gas distribution plate 130 (e.g., a helium distribution layer (HDL)) may be disposed between the resistive heater 122 and the channel 142 to conserve energy. The gas distribution plate 130 may distribute the gas flow so that the gas pressure between the substrate 160 and the top surface of the substrate support assembly 100 is uniform (e.g., the gas distribution plate 130 distributes gas uniformly to the backside of the substrate 160), and the gas distribution plate 130 may act as a thermal choke between the resistive heater 122 and the heat transfer fluid (e.g., coolant) to prevent the heating energy of the resistive heater 122 from being carried away by the heat transfer fluid flow (e.g., the gas distribution plate 130 creates a threshold temperature difference between the channels 142 and the resistive heater 122; the more reliably a low temperature coolant can be used, the less heating power is used to maintain the temperature difference). The resistive heater 122 and the heat transfer fluid may maintain the substrate 160 at about 200 to about 400 degrees Celsius, allowing for fast heat removal when substrate processing (e.g., radio frequency (RF), plasma, etc.) occurs. The heating element (e.g., resistive heater 122) may be disposed proximate the top surface of the substrate support assembly 100, and the channel 142 may be disposed proximate the bottom surface of the substrate support assembly 100 (e.g., with the gas distribution plate 130 therebetween).

The gas distribution plate 130 may increase the distance between the resistive heater 122 and the channels 142 to provide a thermal choke. The gas distribution plate 130 may be substantially hollow to reduce the amount of heat conduction through the solid material of the gas distribution plate 130. The material of the heating plate 120 between the resistive heater 122 and the gas distribution plate 130 may distribute heat laterally. The gas distribution plate 130 allows for a larger temperature difference between the resistive heater 122 and the heat transfer fluid in the channels 142. A lower temperature of the heat transfer fluid is more efficient and uses less energy. Small heating power is used during idle states of the processing chamber, and the substrate support assembly 100 dissipates heat within a few seconds after the processing chamber becomes active (e.g., the RF is turned on).

In some embodiments, the heat transfer fluid flows constantly through channel 142 to respond more quickly to temperature changes (e.g., it flows during active and idle states of the processing chamber, and a shut-off valve for the heat transfer fluid may not be used). In some embodiments, the heat transfer fluid flows through channel 142 during active states of the processing chamber, and does not flow during idle states of the processing chamber to conserve energy during idle states (e.g., a shut-off valve for the heat transfer fluid is used). In some embodiments, the heat transfer fluid is flowed through channel 142 prior to active states of the processing chamber (e.g., when a process recipe begins).

The substrate support assembly 100 includes a susceptor body 110. The substrate support assembly 100 may include a susceptor (e.g., an electrostatic chuck (ESC or E-chuck) susceptor) that includes the susceptor body 110. The susceptor body 110 includes a resistive heater 122 (e.g., an electrical resistive heater, an electric resistance heater, etc.), the susceptor body 110 forms an internal volume 132 for receiving a gas, and the susceptor body 110 forms channels 142 (e.g., heating and/or cooling channels) for receiving a heat transfer fluid. The internal volume 132 is disposed above the channels 142. The resistive heater 122 is disposed above the internal volume 132. The internal volume 132 is a buffer (e.g., a thermal choke) between the resistive heater 122 and the cooling provided by the heat transfer fluid in the channels 142.

In some embodiments, the susceptor body 110 has one or more plates, each plate including one or more of a heater 122, an internal volume 132, or a channel 142. In some embodiments, the heating plate 120 includes a resistive heater, the gas distribution plate 130 defines an internal volume 132 for receiving a gas, and the cooling plate defines channels 142 for receiving a heat transfer fluid. In some embodiments, the heating plate 120 is a top plate, the gas distribution plate 130 is a middle plate, and the cooling plate 140 is a bottom plate (e.g., the top plate is on the middle plate, and the middle plate is on the bottom plate).

In some embodiments, the heat transfer fluid is a synthetic organic heat transfer medium. In some embodiments, the heat transfer fluid is operable for use in the liquid phase in a sealed, forced circulation heat transfer system. In some embodiments, the heat transfer fluid is operable for use over an operating range (e.g., from about -5 degrees Celsius to about 400 degrees Celsius) while being maintained under pressure. In some embodiments, the heat transfer fluid has a boiling range of about 350 degrees Celsius to greater than about 400 degrees Celsius at atmospheric pressure. In some embodiments, the heat transfer fluid is operable to leave no deposits on walls. In some embodiments, the heat transfer fluid has a liquid, clear appearance at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has less than about 1 part per hundred thousand of chlorine. In some embodiments, the heat transfer fluid has a density of about 1.0 grams per milliliter to about 1.1 (about 1.04 to about 1.05) grams per milliliter at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a viscosity of about 42 to about 52 square millimeters per second at about 20 degrees Celsius. In some embodiments, the heat transfer fluid is compatible with graphite, polytetrafluoroethylene (PTFE), and fluoroelastomers. In some embodiments, the heat transfer fluid is operable to be heated to about 350 to about 400 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature between about 200 and about 400 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature between about 200 and about 300 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature between about 300 and about 400 degrees Celsius. In some embodiments, the heat transfer fluid is configured to maintain the susceptor body 110 within about 10 degrees Celsius during substrate processing. In some embodiments, the substrate support assembly 100 (e.g., the susceptor body 110) includes one or more electrical resistance heaters 122 in addition to the heat transfer fluid to control the temperature of the substrate.

In some embodiments, the substrate support assembly 100 (e.g., the susceptor body 110) includes an electrostatic chuck 150 on the heating plate 120. In some embodiments, the electrostatic chuck 150 is configured to support a substrate 160.

In some embodiments, a substrate is disposed (e.g., clamped, electrostatically clamped) on the substrate support assembly 100 (e.g., susceptor body 110) (e.g., via an electrostatic chuck 150). In some embodiments, in response to the processing chamber being idle (e.g., not performing substrate processing), the substrate support assembly 100 maintains the substrate temperature within + or -10 degrees of a predetermined temperature (e.g., a predetermined temperature between about 200 degrees Celsius and about 350 degrees Celsius) via the resistive heater 122. In response to the processing chamber being active (e.g., performing substrate processing, RF turned on, plasma processing, etc.), the substrate support assembly 100 maintains the substrate within + or -10 degrees of a predetermined temperature via a heat transfer fluid in the channel 142. The substrate support assembly 100 is configured to exhaust heat from the plasma source (e.g., heat from the substrate) during substrate processing.

In some embodiments, the heating plate 120 and the gas distribution plate 130 are coupled to one another (e.g., bonded, clamped, welded, glued, etc.). In some embodiments, the gas distribution plate 130 and the cooling plate 140 are coupled to one another (e.g., bonded, clamped, welded, glued, etc.). In some embodiments, the interior volume 132 is formed by the lower surface of the gas distribution plate 130 and at least a portion of the upper surface (e.g., flat upper surface) of the cooling plate 140. In some embodiments, at least a portion of the upper surface of the cooling plate 140 is fixed (e.g., bonded, clamped, welded, etc.) to at least a portion (e.g., an outer periphery portion, an inner portion, etc.) of the lower surface of the gas distribution plate 130. In some examples, the interior volume 132 is formed by the upper surface of the cooling plate 140 and the lower surface (e.g., flat lower surface) of the gas distribution plate (e.g., fixed to one another). In some examples, the interior volume 132 is formed by the upper surface of the cooling plate 140 and the lower surface (e.g., flat lower surface) of the gas distribution plate (e.g., fixed to one another). In some examples, the interior volume 132 is formed by the upper surface of the gas distribution plate 130 and the lower surface of the heating plate 120 (e.g., fixed to one another).

In some embodiments, at least a portion of the susceptor body 110 is fabricated from a metal matrix and a ceramic. The metal matrix can be one or more of an aluminum matrix, a magnesium matrix, a titanium matrix, a cobalt matrix, or a cobalt-nickel alloy matrix. The ceramic can be one or more of silicon carbide, carbon fiber, boron filaments, alumina, or the like. The ceramic can be particles, fibers, filaments, or the like. In some embodiments, the susceptor body 110 is approximately 70% ceramic by volume and approximately 30% metal by volume. In some embodiments, the susceptor body 110 is at least approximately 40% ceramic by volume (e.g., at least approximately 50% ceramic particles by volume). In some embodiments, the susceptor body 110 is fabricated by dispersing a reinforcing material (e.g., ceramic particles) in a metal matrix. In some embodiments, the reinforcing material is coated to prevent chemical reaction with the metal matrix (e.g., carbon fiber coated with nickel or titanium boride). The metal matrix can be a monolithic material with the reinforcing material embedded therein.

In some embodiments, the electrostatic chuck 150 includes a coating (e.g., a plasma spray coating, an e-chuck layer, alumina, one or more dielectric materials, etc.). The coating may be on the top surface of the electrostatic chuck 150. The coating 118 may protect the susceptor body 110 from substrate processing. In some embodiments, the corresponding coefficients of thermal expansion (CTE) of the cooling plate 140, the gas distribution plate 130, the heating plate 120, the electrostatic chuck 150, and the coating 118 are within a threshold range of each other (e.g., about 10%, about 5%, or about 1%).

In some embodiments, the gas distribution plate 130 (e.g., a helium distribution plate) is fixed (e.g., fastened by screws, bolts, or other fasteners) to a component of the susceptor body 110 (e.g., the cooling plate 140). The gas distribution plate 130 includes an internal volume 132 (e.g., channels). Gas (e.g., helium, argon, etc.) flows through the internal volume. Holes (e.g., openings, channels) in the susceptor body 110 (e.g., holes in a coating, holes in the heating plate 120, holes in the electrostatic chuck 150) align with one or more portions of the internal volume 132. Gas flows through the internal volume 132 and the holes to a position above the susceptor body 110 (e.g., a position below the substrate 160). The gas distribution plate 130 can substantially uniformly distribute gas through the holes 119 to different positions below the substrate. The substrate support assembly 100 (e.g., the electrostatic chuck 150) may use a voltage to secure the substrate 160 to the susceptor body 110. The pressure provided by the gas flowing through the interior volume 132 and holes may be less than the pressure provided by the electrostatic chuck voltage securing the substrate 160 to the susceptor body 110. In some embodiments, at least a portion of the gas distribution plate 130 includes a coating (e.g., a plasma spray coating, alumina, one or more dielectric materials, etc.) to prevent corrosion during substrate processing.

In some embodiments, the substrate support assembly 100 includes a susceptor shaft 170. The susceptor shaft 170 is disposed below the cooling plate 140. In some embodiments, at least a portion of the susceptor shaft 170 includes a coating (e.g., a plasma spray coating, alumina, a dielectric material) to prevent corrosion during substrate processing. In some embodiments, at least a portion (e.g., an outer portion) of the electrostatic chuck 150, the heating plate 120, the gas distribution plate 130, the cooling plate 140, and/or the susceptor shaft 170 includes a coating (e.g., a plasma spray coating, alumina, a dielectric material) to prevent corrosion during substrate processing.

The heat transfer fluid is configured to flow through the supply channel in the susceptor shaft 170 to the channel 142 in the susceptor body 170 and from the channel 142 in the susceptor body 110 to the return channel in the susceptor shaft 170. The heat transfer fluid may flow through the supply channel, the channel 142, and the return channel at approximately 50 liters per minute to approximately 150 liters per minute. The heat transfer fluid may be at a temperature between approximately 300 degrees Celsius and approximately 400 degrees Celsius. In some embodiments, the supply channel and the return channel are formed by the susceptor shaft 170. In some embodiments, the supply pipe forms the supply channel and the return pipe forms the return channel. The supply pipe and the return pipe are routed through the interior volume of the susceptor shaft 170.

In some embodiments, the substrate support assembly 100 includes a manifold (e.g., a high-temperature heat transfer fluid manifold). Heat transfer fluid may flow from a heat transfer fluid supply (e.g., a heat transfer fluid source, a pump, a valve, etc.) through the supply channel, through a first channel in the manifold, through channel 142, through a second channel in the manifold, and through a return channel. The heat transfer fluid from the return channel may be treated (e.g., heated, cooled, filtered, increased in flow rate, pumped, etc.) and provided to the supply channel. The manifold may be secured (e.g., clamped, bonded, etc.) to the susceptor body 110 (e.g., to the cooling plate 140). In some embodiments, the manifold is secured to one or more of the cooling plate 140, the gas distribution plate 130, and/or the susceptor shaft 170.

Gas (e.g., helium, argon, etc.) is configured to flow through gas channels in the susceptor shaft 170 to the interior volume 132 in the gas distribution plate 130 and through holes in the susceptor body 110 (e.g., the heating plate 120, the electrostatic chuck 150, etc.) to a position below the substrate 160. In some embodiments, the gas channels are formed by the susceptor shaft 170. In some embodiments, gas conduits form the gas channels. The gas conduits are routed through the interior volume of the susceptor shaft 170.

In some embodiments, the supply channel and return channel each have an inner diameter of about 0.5 inches to 1.5 inches (e.g., about 1 inch), and the gas channel has an inner diameter of about 0.2 inches to about 0.3 inches (e.g., about 0.25 inches).

The processing chamber may be used to perform substrate processing operations that increase the temperature within the processing chamber. The substrate support assembly 100 may heat the susceptor body 110 to a temperature above room temperature and below the temperature of the substrate processing operation. In some examples, the substrate processing operation is at a temperature above the temperature of the susceptor body 110. For example, the substrate processing operation may exceed 350 degrees Celsius, and the resistive heater 122 may heat the susceptor body 110 to about 350 degrees Celsius. The resistive heater 122 may be operable to heat the substrate to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius) during an idle state of the processing chamber (e.g., when no substrate processing operation is being performed). The heat transfer fluid in the channel 142 may be operable to cool the substrate to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius) during an active state of the processing chamber (e.g., when a substrate processing operation is being performed).

In some embodiments, the controller 109 controls the substrate support assembly 100, the processing chamber, the robot, one or more control valves, and/or various aspects of the substrate processing system. The controller 109 is and/or includes a computing device such as a personal computer, a server computer, a programmable logic controller (PLC), a microcontroller, etc. The controller 109 includes one or more processing devices, which in some embodiments are general-purpose processing devices such as a microprocessor, a central processing unit, etc. More specifically, in some embodiments, the processing device is a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing another instruction set or a combination of instruction sets. In some embodiments, the processing device is one or more special-purpose processing devices such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. In some embodiments, the controller 109 includes a data storage device (e.g., one or more disk drives and/or solid state drives), a main memory, a static memory, a network interface, and/or other components. In some embodiments, the controller 109 executes instructions to perform any one or more of the methods or processes described herein. The instructions are stored (during execution of the instructions) in a computer-readable storage medium, including one or more of the main memory, static memory, secondary storage, and/or processing device. In some embodiments, the controller 109 is used to control one or more parameters of the substrate support assembly 100 (e.g., temperature, pressure, flow rate, voltage, etc.). The controller 109 receives sensor data from one or more sensors associated with the substrate support assembly 100.

In some embodiments, one or more sensors provide sensor data to the controller 109. The sensors may include one or more of a thermocouple sensor, a heat sensor, a temperature sensor, a pressure sensor, a flow sensor, a voltage sensor, etc.

In some embodiments, the controller 109 receives sensor data from a sensor (e.g., a thermocouple, a thermal sensor, a temperature sensor) related to the temperature of the substrate (e.g., the temperature of the susceptor body 110). In response to the temperature of the substrate meeting a first threshold temperature (e.g., greater than about 350 degrees Celsius), the controller 109 prevents the resistive heater 122 from heating the heating plate 120 and causes a heat transfer fluid to flow through the channel 142 to cool the substrate. In response to the temperature meeting a second threshold temperature (e.g., less than about 350 degrees Celsius), the controller 109 causes the resistive heater 122 to heat the heating plate 120 to heat the substrate. In some embodiments, the controller 109 causes the heat transfer fluid to flow through the channel 142 during idle and active states of the processing chamber (e.g., by actuating a shut-off valve fluidically coupled to the substrate support assembly). In some embodiments, the controller 109 allows the heat transfer fluid to flow through the channel 142 during an active state of the processing chamber (e.g., by actuating a shut-off valve), and the controller 109 prevents the heat transfer fluid from flowing through the channel 142 during an idle state of the processing chamber (e.g., by actuating a shut-off valve).

In some embodiments, the controller 109 receives sensor data from a sensor (e.g., a pressure sensor, a flow sensor, etc.) related to the pressure of the gas associated with the gas distribution plate 130. In some embodiments, the sensor data is related to a gas inlet (e.g., of a gas channel in the susceptor shaft 170). In some embodiments, the sensor data is related to the interior volume 132. In some embodiments, the sensor data is related to a position below the substrate 160 disposed on the susceptor body 110. The controller 109 may control the gas to a threshold pressure value. In some embodiments, the controller 109 receives voltage data related to an electrostatic chucking force that secures the substrate 160 to the susceptor body 110. In some embodiments, the threshold pressure value of the gas is determined based on the voltage data (e.g., the electrostatic chucking force).

In some embodiments, the system includes a substrate support assembly 100, a controller 109, one or more sensors, one or more fluid temperature regulation devices (e.g., fluid heaters, fluid coolers, etc.), and one or more flow rate regulation devices (e.g., pumps, valves, recirculation pumps, etc.).

In response to the substrate processing apparatus being operated (e.g., turned on or activated by the controller 109) and/or in response to the controller 109 receiving sensor data (e.g., temperature data) indicating that the processing chamber meets a first threshold temperature (e.g., is idle or below 350 degrees Celsius), the controller 109 causes the resistive heater 122 to heat the heating plate 120.

In response to the substrate processing equipment being activated (e.g., turned on, activated by controller 109) and/or in response to controller 109 receiving sensor data (e.g., temperature data) indicating that the processing chamber meets a second threshold temperature (e.g., is in an active state, exceeds 350 degrees Celsius), controller 109 causes a flow regulation device (e.g., a pump, a recirculation pump, etc.) to flow heat transfer fluid through the supply channel, channel 142, and the return channel.

In some embodiments, the controller 109 further causes a fluid temperature regulation device (e.g., a heater, a cooler, a condenser, etc.) to regulate the temperature of the heat transfer fluid (e.g., causing a heater to heat the recirculating heat transfer fluid to a temperature between about 200 degrees Celsius and about 400 degrees Celsius).

In response to a substrate 160 being placed on the substrate support assembly 100 and/or in response to the substrate processing equipment being activated, the controller 109 causes the flow control devices (e.g., valves, pumps) to flow gas (e.g., helium) through the gas channels, through the internal volume 132, and through the holes to the top surface of the substrate support assembly 100 (e.g., below the substrate).

The controller 109 controls the temperature of the substrate by controlling the resistive heater 122 and/or the heat transfer fluid in the channel 142 to heat the substrate during idle states and cool the substrate during active states. The controller 109 may control the temperature of the substrate to within + or -10 degrees (e.g., between about 340 degrees Celsius and about 360 degrees Celsius).

Figures 2A-2C illustrate components of a substrate support assembly (e.g., substrate support assembly 100 of Figure 1, susceptor body 110 of Figure 1) according to certain embodiments. Figure 2A illustrates a cross-sectional view of a heating plate 220 (e.g., heating plate 120 of Figure 1), Figure 2B illustrates a view (e.g., a bottom view) of a gas distribution plate 230 (e.g., gas distribution plate 130 of Figure 1), and Figure 2C illustrates a cross-sectional view of a cooling plate 240 (e.g., cooling plate 140 of Figure 1). Features in Figures 2A-2C with similar reference numbers to those in Figure 1 may have similar or identical functions and/or structures to those in Figure 1.

Referring to FIG. 2A , the heating plate 220 has one or more resistive heaters 222. In some embodiments, a controller (e.g., controller 109 of FIG. 1 ) controls the resistive heaters 222, in conjunction with and/or separately, based on temperature data from one or more sensors (e.g., thermocouples). The heating plate 220 has one or more holes 224 (e.g., channels, openings) extending between the upper and lower surfaces of the heating plate 220. The holes 224 are configured to allow gas (e.g., helium, argon, etc.) to flow from an interior volume 232 of the gas distribution plate 230 to a location between the substrate and the upper surface of the substrate support assembly.

With reference to FIG. 2B , the underside of the gas distribution plate 230 may form one or more internal volumes 232 for receiving a gas (e.g., helium, argon, etc.). The upper surface (e.g., flat upper surface) of the gas distribution plate 230 may be fixed (e.g., bonded) to the lower surface (e.g., flat lower surface) of the heating plate 220. At least a portion of the lower surface of the gas distribution plate 230 may be fixed (e.g., clamped) to the upper surface (e.g., flat upper surface) of the cooling plate 240. In some embodiments, the upper surface of the cooling plate 240 and the lower surface of the gas distribution plate 230 enclose the internal volume 232 (e.g., the gas distribution plate 230 provides the upper surface of the internal volume 232, and the cooling plate 240 provides the lower surface of the internal volume 232).

One or more adapters (e.g., gas plumbing inlets) can be configured to couple the internal volume 232 to gas channels in the susceptor shaft (e.g., susceptor shaft 170 in FIG. 1). The internal volume 232 aligns with holes 224 in the susceptor body to provide gas to a location below the substrate.

In some embodiments, the gas distribution plate 230 includes an upper structure 234, a perimeter structure 236, an inner structure 238, and one or more support structures 239. The upper structure 234, the perimeter structure 236, the inner structure 238, and the support structures 239 can be one continuous component (e.g., formed by molding and/or removing material). The upper structure 234 can have a flat top surface (e.g., configured to secure to the bottom surface of the heating plate 220) and a bottom surface coupled (e.g., integral, bonded) to the perimeter structure 236, the inner structure 238, and the support structures 239. The inner structure 238 can couple to gas channels in the susceptor shaft and provide gas within the interior volume 232. The interior volume 232 can be sealed from the environment at the top by the upper structure 234, at the sides by the perimeter structure 236, in the middle by the inner structure 238, and at the bottom by the top surface of the cooling plate 240. The support structure 239 may extend partially between the perimeter structure 236 and the inner structure 238. The perimeter structure 236, the inner structure 238, and/or one or more support structures 239 may extend from the upper structure 234 to the upper surface of the cooling plate 240 (e.g., in response to the gas distribution plate 230 being coupled to the cooling plate 240). The support structure 239 prevents deformation of the gas distribution plate 230 (e.g., prevents changes in the height of the interior volume 232).

The gas distribution plate 230 is configured to distribute gas to provide a substantially uniform gas pressure (e.g., pressure values within ±10%, ±5%, ±1%, etc. at different locations) between the electrostatic chuck and the substrate.

The ratio of the solid area (e.g., the area of the perimeter structure 236, inner structure 238, and support structure 239) to the total area of the gas distribution plate (e.g., of the upper structure 234) can be up to 10% or up to 5%.

Referring to FIG. 2C, the cooling plate 240 forms one or more channels 242 configured to receive a heat transfer fluid for cooling the susceptor body (e.g., susceptor body 110 of FIG. 1) and a substrate disposed on the susceptor body during active conditions of the processing chamber.

Figures 3A-3C show diagrams of components of a substrate support assembly 300 (e.g., substrate support assembly 100 of Figure 1) according to some embodiments. Figure 3A is a side view of a susceptor shaft 370 (e.g., susceptor shaft 170 of Figure 1), Figure 3B is a bottom view of the susceptor shaft 370, and Figure 3C is a side view of the substrate support assembly 300 without the susceptor shaft 370. Features with like reference numbers compared to features in other figures may include the same or similar structure and/or function.

The susceptor shaft 370 includes an elongated lower portion and a flanged upper portion. The flanged upper portion is configured to be secured (e.g., clamped) to a cooling plate (e.g., cooling plate 240 of FIG. 2C, cooling plate 140 of FIG. 1). A gas distribution plate 330 (e.g., gas distribution plate 230 of FIG. 2B, gas distribution plate 130 of FIG. 1) is disposed on the cooling plate 340, and a heating plate 320 (e.g., heating plate 220 of FIG. 2A, heating plate 120 of FIG. 1) is disposed on the gas distribution plate 330. An electrostatic chuck 350 (e.g., electrostatic chuck 150 of FIG. 1) may be disposed on the heating plate 320.

The supply channel 372, return channel 374, and gas channel 376 are disposed in the susceptor shaft 370. In some embodiments, the supply channel 372, return channel 374, and gas channel 376 are formed by tubes routed through the susceptor shaft 370.

Figure 4 illustrates a method 400 of using a substrate support assembly, according to some embodiments. In some embodiments, one or more of the operations of method 400 are performed by a controller (e.g., controller 109 of Figure 1). Although shown in a particular sequence or order, unless otherwise specified, the order of processes can be changed. Therefore, the illustrated embodiment should be understood as an example only, and the illustrated processes can be performed in a different order, and some processes can be performed in parallel. Furthermore, one or more processes can be omitted in various embodiments. Thus, not all processes are required in all embodiments.

Referring to method 400 of FIG. 4, in block 402, gas (e.g., helium, argon, etc.) is flowed through gas channels in the susceptor shaft, through the interior volume of the gas distribution plate, and through holes in the heater plate and electrostatic chuck to a location below the substrate. A controller may provide the gas flow via a flow regulation device (e.g., a pump, a valve, etc.). The gas provides pressure on the underside of the substrate. In some embodiments, the outer periphery of the substrate is substantially sealed in the susceptor body such that the gas is substantially sealed below the substrate. The controller may provide the gas flow based on sensor data (e.g., pressure sensor data, flow data, etc.). The controller may cause the pressure of the gas below the substrate to be less than a chucking pressure (e.g., electrostatic chucking pressure) of the susceptor body.

In some embodiments, at block 404, sensor data associated with a substrate disposed on the substrate support assembly is received. In some embodiments, the sensor data is associated with the temperature of the substrate and/or the susceptor body. The controller may receive the sensor data from a temperature sensor (e.g., a thermocouple).

In block 406, it is determined (e.g., based on sensor data) that the processing chamber is idle. In some embodiments, in response to determining that the temperature of the substrate and/or susceptor body meets a first threshold temperature (e.g., about 350 degrees Celsius or less), the controller may determine that the processing chamber is idle (e.g., not performing a substrate processing operation). In some embodiments, the controller receives data indicating that the processing chamber is not performing a substrate processing operation. In some embodiments, the controller controls the processing chamber.

In block 408, in response to the processing chamber being in an idle state, a resistive heater disposed within the heating plate heats the heating plate (e.g., heats a substrate disposed on the susceptor body). During the idle state, the resistive heater heats the heating plate to a temperature (e.g., about 350 degrees Celsius) below the substrate processing temperature (e.g., between about 350 degrees Celsius and 400 degrees Celsius) to heat the substrate and maintain it at a temperature (e.g., about 350 degrees Celsius) closer to the substrate processing temperature than room temperature.

In some embodiments, the susceptor body can be heated (e.g., via a resistive heater) to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius) before a substrate is placed on the susceptor body. In response to the substrate being placed on the susceptor body, the substrate is heated (e.g., via thermal conduction from the susceptor body) to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius).

In block 410, the processing chamber is determined to be in an active state (e.g., based on sensor data). The controller may determine that the processing chamber is in an active state based on sensor data related to the temperature of the substrate and/or the susceptor body. The controller may receive data indicating that the processing chamber is performing a substrate processing operation. The controller may have a schedule indicating when the processing chamber should perform a substrate processing operation. The controller may cause the processing chamber to perform a substrate processing operation.

In block 412, in response to the processing chamber being in an active state, the resistive heaters are prevented from heating the heating plate. In some embodiments, the heating plate includes multiple resistive heaters (e.g., forming thermal zones). The controller may cause particular resistive heaters to heat to particular temperatures (e.g., at particular voltages) and may prevent particular resistive heaters from heating the heating plate based on sensor data associated with different locations on the susceptor body.

In block 414, in response to the processing chamber being in an active state, a heat transfer fluid is flowed through channels formed by the susceptor body (e.g., channels formed by a cooling plate) to cool the substrate. The controller may temperature-regulate (e.g., cool) the heat transfer fluid flowing through the channels of the susceptor body via a fluid temperature-regulating device (e.g., a cooler, a condenser) to cool the substrate. The controller may flow the heat transfer fluid through the susceptor body (e.g., at about 70 liters per minute) via a flow-regulating device (e.g., a pump, a recirculation pump, and/or a valve) to cool the susceptor body to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius). The controller may cause the heat transfer fluid to flow through the susceptor body at a lower temperature (e.g., about 300 degrees Celsius to about 350 degrees Celsius). The heat transfer fluid can absorb excess heat from substrate processing to maintain the substrate (e.g., and susceptor body) within a threshold temperature (e.g., + or - 10 degrees Celsius) of the idle temperature of the substrate on the susceptor body (e.g., about 350 degrees Celsius).

In some embodiments, the controller causes the heat transfer fluid to flow through the channel during active and idle states of the processing chamber.

In some embodiments, each of the operations of method 400 is performed while maintaining a sealed environment in the processing chamber. In some embodiments, the predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate is adjusted based on the temperature of the substrate process operation. In some embodiments, for each predetermined temperature of the heat transfer fluid, susceptor body, and/or substrate associated with the corresponding substrate process operation, the temperature of the heat transfer fluid, susceptor body, and/or substrate is maintained within a threshold temperature (e.g., + or -10 degrees Celsius) before, during, and after the corresponding substrate process operation.

Unless otherwise specified, terms such as "cause," "determine," "heat," "cool," "flow," "receive," "transmit," "generate," and the like refer to acts and processes performed or implemented by a computer system that manipulate and convert data represented as physical (electronic) quantities in computer system registers and memory into other data similarly represented as physical quantities in computer system memory or registers or other such information storage, transmission, or display devices. Also, as used herein, terms such as "first," "second," "third," "fourth," and the like are intended as labels distinguishing between different elements and do not imply any ordering by their numerical designation.

The examples described herein also relate to apparatus for performing the methods described herein. In some embodiments, the apparatus is specially constructed to perform the methods described herein, or the apparatus comprises a general-purpose computer system that is selectively programmed by a computer program stored in the computer system. In some embodiments, such a computer program is stored in a computer-readable tangible storage medium.

The methods and illustrative examples described herein are not inherently related to any particular computer or other apparatus. Various general-purpose systems may be used in accordance with the teachings described herein, or more specialized apparatus may be constructed to perform the methods described herein and/or each of their individual functions, routines, subroutines, or operations. Example structures for a variety of these systems are set forth in the description above.

The preceding description has set forth numerous specific details, such as examples of specific systems, components, methods, etc., to provide a thorough understanding of some embodiments of the present disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known components or methods have not been described in detail or have been presented in simplified block diagram form in order to avoid unnecessarily obscuring the present disclosure. Thus, the specific details described are by way of example only. It is contemplated that particular embodiments may vary from these illustrative details and still be within the scope of the present disclosure.

As used herein, the terms "on," "below," "between," "disposed on," "support," and "over" refer to the relative position of one layer of material or component with respect to another layer or component. For example, a layer disposed on, above, or below another layer may be in direct contact with the other layer or may have one or more intervening layers. Moreover, a layer disposed between two layers may be in direct contact with the two layers or may have one or more intervening layers. Similarly, unless otherwise specified, a feature disposed between two features may be in direct contact with the adjacent feature or may have one or more intervening layers.

References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described with respect to that embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." When the terms "about" or "approximately" are used herein, this means that the stated nominal value is accurate to within ±10%.

Although the operations of the methods herein have been illustrated and described in a particular order, the order of the operations of each method may be changed such that some operations are performed at least partially concurrently with other operations, or such that some operations are performed in reverse order. In other embodiments, the sub-processing of instructions or separate operations is intermittent and/or alternating.

It is to be understood that the foregoing description is illustrative, and not restrictive. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the foregoing description. The scope of the present disclosure should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims (18)

a cooling plate forming one or more channels configured to receive a heat transfer fluid , the heat transfer fluid operable to be between about 200 degrees Celsius and about 300 degrees Celsius for cooling a substrate support assembly;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas;
a heating plate disposed on the gas distribution plate and including a resistance heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate within the processing chamber. a cooling plate forming one or more channels configured to receive a heat transfer fluid;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas;
a heating plate disposed on the gas distribution plate and including a resistance heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate in a processing chamber;
A substrate support assembly, wherein the electrostatic chuck comprises a coating, and wherein corresponding coefficients of thermal expansion (CTE) of the cooling plate, the gas distribution plate, the heating plate, the electrostatic chuck, and the coating are within a threshold range of each other. a cooling plate forming one or more channels configured to receive a heat transfer fluid;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas, the gas distribution plate having a solid area to total area ratio of up to about 10 percent;
a heating plate disposed on the gas distribution plate and including a resistance heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate within the processing chamber. a cooling plate forming one or more channels configured to receive a heat transfer fluid, the heat transfer fluid operable to flow through the one or more channels during an idle state of a processing chamber and during an active state of the processing chamber;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas;
a heating plate disposed on the gas distribution plate and including a resistance heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate within the processing chamber. a cooling plate forming one or more channels configured to receive a heat transfer fluid;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas;
a heating plate disposed on the gas distribution plate and including a resistance heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate in a processing chamber,
The substrate support assembly is fluidly coupled to a shut-off valve, the shut-off valve being configured to provide a flow of the heat transfer fluid through the one or more channels during an active state of the processing chamber and to be actuated to prevent the flow of the heat transfer fluid through the one or more channels during an idle state of the processing chamber. a cooling plate forming one or more channels configured to receive a heat transfer fluid;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas;
a heating plate disposed on the gas distribution plate and including a resistance heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate in a processing chamber,
The substrate support assembly is operable to maintain the substrate at a substantially constant temperature during idle conditions of the processing chamber and during active conditions of the processing chamber. a cooling plate forming one or more channels configured to receive a heat transfer fluid operable to cool the substrate support assembly to between about 300 degrees Celsius and about 400 degrees Celsius during active conditions of the processing chamber;
a gas distribution plate disposed on the cooling plate and defining an interior volume configured to receive a gas;
a heating plate disposed on the gas distribution plate, the heating plate including a resistive heater operable to heat the substrate support assembly to between about 300 degrees Celsius and about 400 degrees Celsius during an idle state of the processing chamber;
an electrostatic chuck disposed on the heating plate and configured to support a substrate within the processing chamber. a cooling plate forming one or more channels configured to receive a heat transfer fluid;
a gas distribution plate disposed on the cooling plate, the gas distribution plate defining an interior volume configured to receive a gas, the gas distribution plate operable to provide a temperature gradient between the resistive heater and the heat transfer fluid at about 50 degrees Celsius to about 200 degrees Celsius;
a heating plate disposed on the gas distribution plate and including the resistive heater;
an electrostatic chuck disposed on the heating plate and configured to support a substrate within the processing chamber. 9. The substrate support assembly of claim 1 , further comprising a shaft disposed below the cooling plate, wherein the gas is configured to flow through gas channels in the shaft into the interior volume of the gas distribution plate and through openings formed in the heating plate and the electrostatic chuck to a position between the substrate and the electrostatic chuck. The substrate support assembly of any preceding claim, wherein the resistive heater is operable to heat the heating plate to between about 300 degrees Celsius and about 400 degrees Celsius. The substrate support assembly of claim 1 , wherein the gas distribution plate is configured to distribute the gas to provide a substantially uniform gas pressure between the electrostatic chuck and the substrate. a substrate support assembly disposed within the processing chamber, the substrate support assembly including a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate;
a controller,
flowing a heat transfer fluid through one or more channels formed by said cooling plate;
flowing gas through the gas distribution plate to openings formed by the heating plate and from the openings in the heating plate to a location between an upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly;
a controller for causing a resistance heater disposed within the heating plate to heat the heating plate ;
The controller further comprises:
determining whether the processing chamber is idle or active;
and preventing the resistive heater from heating the heating plate in response to determining that the processing chamber is in the active state, and causing the resistive heater to heat the heating plate in response to determining that the processing chamber is in the idle state.
system. a substrate support assembly disposed within the processing chamber, the substrate support assembly including a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate;
a controller,
flowing a heat transfer fluid through one or more channels formed by said cooling plate;
flowing gas through the gas distribution plate to openings formed by the heating plate and from the openings in the heating plate to a location between an upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly;
a controller for causing a resistance heater disposed within the heating plate to heat the heating plate;
the controller is further for flowing the heat transfer fluid through the one or more channels during an idle state of the processing chamber and during an active state of the processing chamber.
system. a substrate support assembly disposed within the processing chamber, the substrate support assembly including a cooling plate, a gas distribution plate disposed on the cooling plate, and a heating plate disposed on the gas distribution plate;
a controller,
flowing a heat transfer fluid through one or more channels formed by said cooling plate;
flowing gas through the gas distribution plate to openings formed by the heating plate and from the openings in the heating plate to a location between an upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly;
a controller for causing a resistance heater disposed within the heating plate to heat the heating plate,
the system further comprising a shut-off valve fluidly coupled to the substrate support assembly, the controller further being for operating the shut-off valve to provide a flow of the heat transfer fluid through the one or more channels during an active state of the processing chamber and for operating the shut-off valve to prevent the flow of the heat transfer fluid through the one or more channels during an idle state of the processing chamber.
system. flowing a heat transfer fluid through one or more channels formed by a cooling plate of a substrate support assembly;
flowing gas through a gas distribution plate of the substrate support assembly disposed on the cooling plate, and through openings formed in a heating plate of the substrate support assembly disposed on the cooling plate to a location between an upper surface of the substrate support assembly and a substrate disposed on the substrate support assembly within a processing chamber;
and in response to the processing chamber being idle, causing a resistive heater disposed within the heating plate to heat the heating plate. 16. The method of claim 15 , wherein flowing the heat transfer fluid through the one or more channels is in response to the processing chamber being in an active state. 16. The method of claim 15 , further comprising: in response to the processing chamber being in an active state, preventing the resistive heater from heating the heating plate. receiving temperature data from a sensor associated with the heating plate;
16. The method of claim 15 , further comprising determining whether the processing chamber is in the idle state or the active state based on the temperature data.