JP7728078B2 - Substrate Processing Equipment - Google Patents

Description

This application relates to a substrate processing apparatus.

Substrate processing equipment for removing resist formed on the main surface of a substrate has been proposed (for example, Patent Document 1). In Patent Document 1, a mixture of sulfuric acid and hydrogen peroxide solution is supplied to the main surface of the substrate. When the sulfuric acid and hydrogen peroxide solution are mixed, they react to produce Caro's acid. This Caro's acid can efficiently remove resist from the substrate.

However, this process requires a continuous supply of sulfuric acid and hydrogen peroxide solution, resulting in large consumption of these substances. To reduce the environmental impact, it is necessary to reduce the amount of sulfuric acid used, and therefore the amount of chemicals consumed. To reduce this consumption of chemicals, sulfuric acid has traditionally been recovered and reused. However, mixing sulfuric acid and hydrogen peroxide solution reduces the sulfuric acid concentration, making it difficult to recover sulfuric acid at a high concentration.

Japanese Patent Application Laid-Open No. 2020-88208

One possible solution is to generate active species such as oxygen radicals using atmospheric pressure plasma, and then react these active species with sulfuric acid to produce Caro's acid. This makes it possible to remove resist without using hydrogen peroxide.

A more specific configuration of a substrate processing apparatus could include a nozzle that supplies processing liquid to the main surface of the substrate, and a unit that supplies active species to the main surface of the substrate. This allows active species to be supplied to the processing liquid that has landed on the main surface of the substrate. As a result, the active species react with the processing liquid on the main surface of the substrate, improving the processing capacity of the processing liquid. This allows the main surface of the substrate to be processed efficiently with high processing capacity.

Even in processes using such processing solutions and activated species, it is desirable to process substrates more uniformly.

Therefore, the present application aims to provide technology that enables more uniform processing of substrates.

a first unit body forming a first gas flow path for flowing a gas from above toward the first electrode group, and a substrate holding unit configured to hold a substrate and rotate the substrate around a rotation axis passing through a center of the substrate; a processing liquid nozzle configured to discharge a processing liquid toward a main surface of the substrate held by the substrate holding unit; and a first plasma generating unit provided at a position adjacent to the processing liquid nozzle in a horizontal direction without overlapping with the processing liquid nozzle in a plan view along the rotation axis, wherein the first plasma generating unit includes a first electrode group having a width equal to or greater than a radius of the substrate and including a plurality of first electrodes arranged side by side at intervals in a plan view; and a first unit body forming a first gas flow path for flowing a gas from above toward the first electrode group, and a first unit body including a flow path partition that partitions the first gas flow path into a plurality of gas division flow paths in a plan view; the substrate processing apparatus includes a gas supply unit that supplies the gas to the first gas flow path; the processing liquid nozzle discharges the processing liquid toward the center of the main surface of the substrate; the plurality of gas division flow paths include a first gas division flow path and a second gas division flow path; a distance between the first gas division flow path and the rotation axis is shorter than a distance between the second gas division flow path and the rotation axis; and the gas supply unit supplies the gas to the first gas division flow path and the second gas division flow path such that a first flow velocity of the gas in the first gas division flow path is higher than a second flow velocity of the gas in the second gas division flow path .

A second aspect of the substrate processing apparatus comprises a substrate holding part that holds a substrate and rotates the substrate around a rotation axis that passes through the center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, and a first plasma generating unit provided at a position adjacent to the processing liquid nozzle in a planar view along the rotation axis, wherein the first plasma generating unit includes a first electrode group having a plurality of first electrodes that are arranged side by side and spaced apart from each other in a planar view, and a first unit body that forms a first gas flow path for flowing gas from vertically above toward the first electrode group, and supplies the gas that has passed through the first electrode group to the main surface of the substrate held by the substrate holding part, and the first plasma generating unit further comprises a plurality of dielectric protective members that respectively cover the plurality of first electrodes, and a dielectric partition member provided between the plurality of first electrodes and the plurality of dielectric protective members .

A third aspect of the substrate processing apparatus is the substrate processing apparatus according to the second aspect, wherein the first plasma generating unit supplies the gas to a region of the substrate that is equal to or greater than the radius of the substrate and includes the center and peripheral edges of the substrate.

A fourth aspect of the substrate processing apparatus is the substrate processing apparatus according to the second or third aspect, wherein the first unit body includes a flow path divider that divides the first gas flow path into a plurality of gas division flow paths in a plan view.

A fifth aspect of the substrate processing apparatus is a substrate processing apparatus according to the fourth aspect, further comprising a gas supply unit that supplies the gas to the first gas flow path, the processing liquid nozzle ejects the processing liquid toward a center of the main surface of the substrate, the plurality of gas division flow paths include a first gas division flow path and a second gas division flow path, the distance between the first gas division flow path and the rotation axis is shorter than the distance between the second gas division flow path and the rotation axis, and the gas supply unit supplies the gas to the first gas division flow path and the second gas division flow path so that a first flow velocity of the gas in the first gas division flow path is higher than a second flow velocity of the gas in the second gas division flow path.

A sixth aspect of the substrate processing apparatus is a substrate processing apparatus according to the first, fourth or fifth aspect, wherein the first unit body is formed with a plurality of gas supply flow paths that supply gas to one of the plurality of gas division flow paths, and the downstream outlets of the plurality of gas supply flow paths are connected to the one of the plurality of gas division flow paths at different positions from each other in a planar view.

A seventh aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to sixth aspects, wherein the first unit body further includes a first plate-shaped body that is provided upstream of the first electrode group in the first gas flow path and has a plurality of openings that face the first electrode group.

An eighth aspect of the substrate processing apparatus includes a substrate holding part that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, and a first plasma generating unit that is provided at a position adjacent to the processing liquid nozzle in a horizontal direction without overlapping with the processing liquid nozzle in a plan view along the rotation axis, wherein the first plasma generating unit includes a first electrode group having a width equal to or greater than the radius of the substrate and including a plurality of first electrodes that are arranged side by side at intervals from each other in a plan view, and a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, a gas supplying portion for supplying a gas to a region of the main surface of the substrate held by the substrate holding portion, the region being equal to or greater than the radius of the substrate and including the center to the peripheral edge of the substrate; the processing liquid nozzle discharging the processing liquid toward the center of the substrate; the first unit body further including a first plate-like body that is provided upstream of the first electrode group in the first gas flow path and has a plurality of openings facing the first electrode group; the processing liquid nozzle discharging the processing liquid toward the center of the main surface of the substrate; the plurality of openings including a first opening and a second opening; the distance between the first opening and the rotation axis being shorter than the distance between the second opening and the rotation axis; and the area of the first opening being smaller than the area of the second opening.

A ninth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to eighth aspects, wherein the first unit body further includes a shutter that opens and closes an outlet of the first gas flow path located downstream of the first electrode group.

A tenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the ninth aspect, wherein the first unit body further includes a second plate-shaped body having multiple outlets as outlets for the first gas flow path.

An eleventh aspect of the substrate processing apparatus includes a substrate holding part that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, and a first plasma generating unit that is provided at a position adjacent to the processing liquid nozzle in the horizontal direction without overlapping with the processing liquid nozzle in a plan view along the rotation axis, wherein the first plasma generating unit includes a first electrode group having a width equal to or greater than the radius of the substrate and including a plurality of first electrodes that are provided side by side at intervals from each other in a plan view, and a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, The gas that has passed through one electrode group is supplied to a region of the main surface of the substrate held by the substrate holding part, the region being equal to or greater than the radius of the substrate, including the center to the peripheral edge of the substrate, the processing liquid nozzle ejects the processing liquid toward the center of the substrate, the first unit body further includes a second plate-shaped body having a plurality of outlets as outlets for the first gas flow path, the processing liquid nozzle ejects the processing liquid toward the center of the main surface of the substrate, the plurality of outlets include a first outlet and a second outlet, the distance between the first outlet and the rotation axis is shorter than the distance between the second outlet and the rotation axis, and the area of the first outlet is smaller than the area of the second outlet.

A twelfth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to eleventh aspects, wherein the processing liquid nozzle ejects the processing liquid toward the center of the main surface of the substrate, the distance between a first electric field space in the electric field space between the plurality of electrodes and the rotation axis is shorter than the distance between a second electric field space in the electric field space and the rotation axis, and an electric field is applied to the first electric field space with a higher electric field strength than the electric field strength of the electric field applied to the second electric field space.

A thirteenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the twelfth aspect, wherein the magnitude of the voltage applied between two of the plurality of electrodes that form the first electric field space is greater than the magnitude of the voltage applied between two of the plurality of electrodes that form the second electric field space.

A fourteenth aspect of the substrate processing apparatus is a substrate processing apparatus according to the twelfth or thirteenth aspect, wherein the distance between two of the plurality of electrodes that form the first electric field space is narrower than the distance between two of the plurality of electrodes that form the second electric field space.

A fifteenth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to fourteenth aspects, further comprising a second plasma generation unit. The second plasma generation unit includes a second electrode group having a plurality of second electrodes and a second unit body forming a second gas flow path for flowing gas toward the second electrode group. The gas that has passed through the second electrode group is supplied to the processing liquid from the processing liquid nozzle until it lands on the main surface of the substrate.

A sixteenth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to fifteenth aspects, wherein the first plasma generating unit surrounds the processing liquid nozzle in a plan view and forms a blocking plate together with the processing liquid nozzle, and the blocking plate is disposed vertically above the upper surface of the substrate held by the substrate holder and faces the upper surface of the substrate in the vertical direction.

A seventeenth aspect of the substrate processing apparatus is a substrate processing apparatus according to any one of the first to sixteenth aspects, in which a plurality of first electrode groups are provided, and the plurality of first electrode groups are arranged side by side in the circumferential direction of the rotation axis .
An eighteenth aspect of the substrate processing apparatus includes a substrate holding part that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, and a first plasma generating unit provided at a position adjacent to the processing liquid nozzle in a plan view along the rotation axis, wherein the first plasma generating unit includes a first electrode group having a plurality of first electrodes that are arranged side by side at intervals from each other in a plan view, and a gas nozzle that ejects a gas from vertically above toward the first electrode group. the gas that has passed through the first electrode group is supplied to the main surface of the substrate held by the substrate holding part, the processing liquid nozzle ejects the processing liquid toward a center of the main surface of the substrate, the distance between a first electric field space among the plurality of electrodes and the rotation axis is shorter than the distance between a second electric field space among the electric field spaces and the rotation axis, and an electric field is applied to the first electric field space with a higher electric field strength than the electric field strength of the electric field applied to the second electric field space .
A nineteenth aspect of the substrate processing apparatus includes a substrate holding part that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, a first plasma generating unit provided adjacent to the processing liquid nozzle in a plan view along the rotation axis, and a second plasma generating unit, wherein the first plasma generating unit includes a first electrode group having a plurality of first electrodes that are arranged side by side at intervals in a plan view, and a second plasma generating unit provided vertically above the first electrode group. the second plasma generating unit includes a second electrode group having a plurality of second electrodes, and a second unit body forming a second gas flow path for flowing gas toward the second electrode group, and supplies the gas that has passed through the second electrode group to the processing liquid from the processing liquid nozzle until it lands on the processing liquid's main surface.
A twentieth aspect of the substrate processing apparatus comprises a substrate holding part that holds a substrate and rotates the substrate around a rotation axis passing through the center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, and a first plasma generating unit provided adjacent to the processing liquid nozzle in a planar view along the rotation axis, wherein the first plasma generating unit includes a first electrode group having a plurality of first electrodes arranged side by side at a distance from each other in a planar view, and a first unit body that forms a first gas flow path for flowing gas from vertically above toward the first electrode group, and supplies the gas that has passed through the first electrode group to the main surface of the substrate held by the substrate holding part, and the first plasma generating unit surrounds the processing liquid nozzle in a planar view and forms a blocking plate together with the processing liquid nozzle, and the blocking plate is provided vertically above an upper surface of the substrate held by the substrate holding part and faces the upper surface of the substrate in the vertical direction.
A 21st aspect of a substrate processing apparatus comprises a substrate holding part that holds a substrate and rotates the substrate around a rotation axis that passes through the center of the substrate, a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding part, and a first plasma generation unit provided at a position adjacent to the processing liquid nozzle in a planar view along the rotation axis, wherein the first plasma generation unit includes a first electrode group having a plurality of first electrodes that are arranged side by side and spaced apart from each other in a planar view, and a first unit body that forms a first gas flow path for flowing gas from vertically above toward the first electrode group, and supplies the gas that has passed through the first electrode group to the main surface of the substrate held by the substrate holding part, and wherein a plurality of first electrode groups are provided, and the plurality of first electrode groups are arranged side by side in a circumferential direction of the rotation axis.

In the first aspect of the substrate processing apparatus, the first electrodes are spaced apart in a plan view, allowing an electric field to be applied over a wider area in a plan view, and plasma to be generated over a wider area. This in turn allows activated species from the plasma to be supplied to the main surface of the substrate over a wider area, resulting in more uniform processing.

The second aspect of the substrate processing apparatus can suppress arc discharge between electrodes.

According to the third aspect of the substrate processing apparatus, the first plasma generating unit supplies gas to the main surface of the rotating substrate, thereby supplying activated species to the entire main surface of the substrate.

According to the fourth aspect of the substrate processing apparatus, the flow rate can be adjusted for each gas division flow path.

The fifth aspect of the substrate processing apparatus can improve processing uniformity across the main surface of the substrate.

According to the sixth aspect of the substrate processing apparatus, gas can be supplied more uniformly to the gas division channels.

According to the seventh aspect of the substrate processing apparatus, gas can be supplied more uniformly to the electrode group.

The eighth aspect of the substrate processing apparatus can improve the uniformity of processing on the main surface of the substrate.

According to the ninth aspect of the substrate processing apparatus, when the shutter closes the outlet, gas remains in the first gas flow path, allowing more activated species to be generated. By opening the outlet with the shutter in this state, more activated species can be supplied to the main surface of the substrate.

According to the tenth aspect of the substrate processing apparatus, gas can be supplied more uniformly to the main surface of the substrate.

According to the eleventh aspect of the substrate processing apparatus, it is possible to improve the uniformity of processing on the main surface of the substrate.

The twelfth aspect of the substrate processing apparatus can improve processing uniformity on the main surface of the substrate.

According to the thirteenth aspect of the substrate processing apparatus, an electric field with high field strength can be applied at a position close to the axis of rotation.

According to the fourteenth aspect of the substrate processing apparatus, an electric field with high field strength can be applied at a position close to the axis of rotation.

According to the fifteenth aspect of the substrate processing apparatus, active species can be made to react with the processing liquid before it lands on the center of the substrate, improving the processing capacity of the processing liquid before it lands. This allows for more appropriate processing of the center of the main surface of the substrate.

According to the sixteenth aspect of the substrate processing apparatus, the atmosphere between the upper surface of the substrate and the shielding plate can be prevented from diffusing into the space above the shielding plate. It is also possible to prevent external air from mixing into the atmosphere between the shielding plate and the substrate, which would otherwise reduce the gas concentration in the atmosphere.

According to the seventeenth aspect of the substrate processing apparatus, the strength of the electric field space of each first electrode group can be adjusted by individually adjusting the voltage of each first electrode group in the circumferential direction.

1 is a plan view schematically illustrating an example of a configuration of a substrate processing system. FIG. 2 is a functional block diagram illustrating an example of an internal configuration of a control unit. FIG. 1 is a side view schematically illustrating an example of a configuration of a substrate processing apparatus. FIG. 2 is a cross-sectional view schematically illustrating an example of the configuration of a nozzle head. FIG. 2 is a cross-sectional view schematically illustrating an example of the configuration of a nozzle head. FIG. 2 is a cross-sectional view schematically illustrating an example of the configuration of a nozzle head. FIG. 2 is a longitudinal sectional view schematically illustrating an example of the configuration of a nozzle head. 10 is a flowchart showing an example of an operation of the substrate processing apparatus. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the first electrode group. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. FIG. 4 is a side cross-sectional view schematically illustrating an example of a configuration in the vicinity of an outlet of a first gas flow path. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. FIG. 10 is a plan view schematically showing another example of the configuration of the first electrode group. FIG. 10 is a plan view schematically showing another example of the configuration of the first electrode group. FIG. 10 is a plan view schematically showing another example of the configuration of the first electrode group. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. FIG. 4 is a cross-sectional view schematically illustrating an example of the configuration of a second plasma generating unit. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the nozzle head. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the substrate processing apparatus. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the substrate processing apparatus. FIG. 10 is a cross-sectional view schematically showing another example of the configuration of the first electrode group. FIG. 10 is a cross-sectional view schematically showing another example of the first electrode group.

Embodiments will be described below with reference to the accompanying drawings. Note that the drawings are schematic, and for the sake of convenience, components have been omitted or simplified as appropriate. Furthermore, the relative sizes and positions of components shown in the drawings are not necessarily accurately depicted and may be changed as appropriate.

Furthermore, in the following description, similar components are illustrated with the same symbols, and their names and functions are also the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

Furthermore, even if ordinal numbers such as "first" or "second" are used in the following description, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not intended to be limited to the ordering that may result from these ordinal numbers.

Unless otherwise specified, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only indicate that positional relationship precisely, but also indicate a state where there is a relative displacement in terms of angle or distance within a range that provides tolerance or equivalent functionality. Expressions indicating an equal state (e.g., "identical," "equal," "homogeneous," etc.) not only indicate a state where there is strict quantitative equivalence, but also indicate a state where there is a difference that provides tolerance or equivalent functionality, unless otherwise specified. Expressions indicating shape (e.g., "rectangular" or "cylindrical") not only indicate a strict geometrical shape, but also indicate a shape with irregularities, chamfers, etc., within a range that provides equivalent effects, unless otherwise specified. The expressions "comprise," "include," "have," "includes," "includes," or "have" of one component are not exclusive expressions that exclude the presence of other components. The expression "at least one of A, B, and C" includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

First Embodiment
<Overall configuration of substrate processing system>
1 is a plan view schematically showing an example of the configuration of a substrate processing system 100. The substrate processing system 100 is a single-wafer processing apparatus that processes substrates W to be processed one by one.

The substrate processing system 100 processes the substrate W, which is a disk-shaped semiconductor substrate, and then performs a drying process. Here, a resist is formed on the main surface of the substrate W, and the substrate processing system 100 removes the resist as part of the process for the substrate W.

The substrate W is not necessarily limited to a semiconductor substrate. For example, various substrates can be used for the substrate W, such as a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. Furthermore, the shape of the substrate is not limited to a disk, and various shapes, such as a rectangular plate, can be used.

The substrate processing system 100 includes a load port 101, an indexer robot 110, a main transport robot 120, multiple processing units 130, and a control unit 90.

As illustrated in FIG. 1, multiple load ports 101 are arranged in a row. A carrier C is loaded into each load port 101. The carrier C may be a FOUP (Front Opening Unified Pod) that stores substrates W in an enclosed space, a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette) that exposes substrates W to the outside air. The indexer robot 110 transports substrates W between the carrier C and the main transport robot 120. The main transport robot 120 transports substrates W to the processing units 130.

The processing units 130 perform processing on the substrates W. The substrate processing system 100 in this embodiment is equipped with 12 processing units 130.

Specifically, four towers, each containing three processing units 130 stacked vertically, are arranged around the main transport robot 120.

Figure 1 shows a schematic representation of one of the three stacked processing units 130. Note that the number of processing units 130 in the substrate processing system 100 is not limited to 12 and may be changed as appropriate.

The main transport robot 120 is installed in the center of four towers in which processing units 130 are stacked. The main transport robot 120 transports the substrates W to be processed received from the indexer robot 110 into each processing unit 130. The main transport robot 120 also transports processed substrates W from each processing unit 130 and hands them over to the indexer robot 110. The control unit 90 controls the operation of each component of the substrate processing system 100.

Figure 2 is a functional block diagram illustrating an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit, and includes, for example, a data processing unit 91 and a storage medium 92. In the specific example of Figure 2, the data processing unit 91 and the storage medium 92 are connected to each other via a bus 93. The data processing unit 91 may be, for example, a central processing unit (CPU). The storage medium 92 may include a non-transitory storage medium (e.g., a read-only memory (ROM) or a hard disk) 921 and a temporary storage medium (e.g., a random access memory (RAM)) 922. The non-transitory storage medium 921 may store, for example, a program that defines the processing to be performed by the control unit 90. The data processing unit 91 executes this program, allowing the control unit 90 to perform the processing defined in the program. Of course, some or all of the processing performed by the control unit 90 may be performed by hardware. The specific example of Figure 2 illustrates an example in which the indexer robot 110, main transport robot 120, and processing unit 130 are connected to the bus 93.

<Substrate processing apparatus>
3 is a side view schematically showing an example of the configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 corresponds to one of the plurality of processing units 130. The plurality of processing units 130 may have the same configuration as each other, or may have different configurations from each other.

As shown in FIG. 3, the substrate processing apparatus 1 includes a substrate holder 2, a processing liquid nozzle 4, and a first plasma generation unit 5. Below, each component will be outlined and then described in detail.

The substrate holder 2 holds the substrate W in a horizontal position while rotating the substrate W around a rotation axis Q1. "Horizontal position" here means a position in which the thickness direction of the substrate W is aligned with the vertical direction. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned with the vertical direction. Such a substrate holder 2 is also called a spin chuck.

Hereinafter, the radial and circumferential directions with respect to the rotation axis Q1 may be simply referred to as the radial and circumferential directions.

The processing liquid nozzle 4 supplies processing liquid to the main surface of the substrate W held by the substrate holder 2. In Figure 3, the processing liquid ejected from the processing liquid nozzle 4 toward the substrate W is schematically indicated by a dashed arrow. Here, sulfuric acid is assumed as the processing liquid, but it may also be a chemical liquid such as a liquid containing at least one of sulfate, peroxosulfuric acid, and peroxosulfate, or a liquid containing hydrogen peroxide. The processing liquid is typically an aqueous solution.

The first plasma generating unit 5 is located adjacent to the processing liquid nozzle 4 when viewed along the rotation axis Q1 (i.e., in a plan view). Gas is supplied to the first plasma generating unit 5 from a gas supply unit 50, and the gas flows through a first gas flow path 60 within the first plasma generating unit 5 toward the main surface of the substrate W. For example, an oxygen-containing gas containing oxygen can be used. The oxygen-containing gas includes, for example, oxygen gas, ozone gas, carbon dioxide gas, air, or a mixture of at least two of these. The gas may further include an inert gas. The inert gas includes, for example, nitrogen gas, argon gas, neon gas, helium gas, or a mixture of at least two of these.

As described below, the first plasma generation unit 5 has a first electrode group 7 downstream of the first gas flow path 60. The first electrode group 7 is configured to allow gas to pass through, and applies an electric field to the surrounding electric field space for plasma. The electric field space is a space to which an electric field for generating plasma is applied. As the gas passes through the first electrode group 7 (i.e., the electric field space), the electric field acts on the gas. This ionizes a portion of the gas, generating plasma (plasma generation process). For example, an inert gas such as argon gas ionizes to generate plasma. Here, as an example, plasma is generated under atmospheric pressure. Atmospheric pressure here refers to, for example, a pressure greater than or equal to 80% of standard atmospheric pressure and less than or equal to 120% of standard atmospheric pressure.

When this plasma is generated, various reactions occur, such as dissociation and excitation of molecules and atoms due to electron collision reactions, and various active species, such as highly reactive neutral radicals, are generated. For example, plasma ions or electrons react with oxygen-containing gas to generate oxygen radicals. These active species move along the gas flow and flow from the lower end of the first plasma generating unit 5 toward the main surface of the substrate W held by the substrate holder 2. In Figure 3, the gas flowing from the first plasma generating unit 5 toward the substrate W is schematically indicated by solid arrows.

In the example of Figure 3, the processing liquid nozzle 4 and first plasma generation unit 5 are provided vertically above the substrate W held by the substrate holder 2, and supply processing liquid and gas, respectively, to the upper surface of the substrate W.

In the example shown in Figure 3, the treatment liquid nozzle 4 and the first plasma generation unit 5 are integrally connected to form the nozzle head 3. In the example shown in Figure 3, the nozzle head 3 is movable by a head movement mechanism 30.

The head moving mechanism 30 can move the nozzle head 3 between a standby position and a processing position on its movement path. The standby position is a position where the nozzle head 3 does not interfere with the transport path of the substrate W when the substrate W is being loaded or unloaded, and is, for example, a position radially outward from the substrate holder 2 in a plan view. The processing position is a position where the nozzle head 3 supplies processing liquid and gas to the substrate W, and where the nozzle head 3 faces the main surface of the substrate W in the vertical direction. As a more specific example, the processing position is a position where the processing liquid nozzle 4 can deposit processing liquid at the center of the substrate W. The head moving mechanism 30 may include a linear motion mechanism such as a linear motor or a ball screw mechanism.

Alternatively, the head moving mechanism 30 may include an arm-type moving mechanism instead of a linear motion mechanism. In this case, the nozzle head 3 is connected to the tip of an arm extending horizontally. The base end of the arm is connected to a support column extending vertically. This support column is connected to a motor and rotates around the central axis of the support column along the vertical direction. As the support column rotates around its central axis, the arm pivots around the central axis in a horizontal plane, and the nozzle head 3 attached to the tip of the arm moves in an arc in the horizontal plane around the central axis. The head moving mechanism 30 is configured so that this arc-shaped movement path follows the diameter of the substrate W in a plan view.

The processing liquid ejected from the processing liquid nozzle 4 and landing on the main surface of the substrate W flows radially outward from the main surface of the substrate W and splashes outward from the periphery of the substrate W. Therefore, in the example of Figure 3, a cup 8 is provided in the substrate processing apparatus 1. The cup 8 has a cylindrical shape that surrounds the substrate holder 2. The central axis of the cylindrical shape of the cup 8 coincides with the rotation axis Q1. The processing liquid that splashes outward from the periphery of the substrate W collides with the inner surface of the cup 8, flows downward, and is collected by a collection mechanism (not shown), or is drained to the outside by a drainage mechanism (not shown).

The substrate processing apparatus 1 is also provided with an exhaust port (not shown) radially outward from the substrate holder 2. For example, the exhaust port may be provided in the cup 8. The activated species and gas supplied to the main surface of the substrate W flow radially outward along the main surface of the substrate W and are exhausted from the exhaust port.

<Substrate holding part>
3 , the substrate holder 2 includes a base 21, a plurality of chucks 22, and a rotation mechanism 23. The base 21 has a disk shape centered on a rotation axis Q1, and a plurality of chucks 22 are provided upright on its upper surface. The plurality of chucks 22 are provided at equal intervals along the periphery of the substrate W. The chucks 22 are drivable between a chucking position in contact with the periphery of the substrate W and a release position spaced apart from the periphery of the substrate W. When the plurality of chucks 22 are stopped at their respective chucking positions, the plurality of chucks 22 hold the periphery of the substrate W. When the plurality of chucks 22 are stopped at their respective release positions, the substrate W is released from its holding. A chuck driving unit (not shown) that drives the plurality of chucks 22 is configured, for example, with a link mechanism, a magnet, etc., and is controlled by the control unit 90.

The rotation mechanism 23 includes a motor 231. The motor 231 is connected to the underside of the base 21 via a shaft 232 and is controlled by the control unit 90. When the motor 231 rotates the shaft 232 and the base 21 around the rotation axis Q1, the substrate W held by the multiple chucks 22 also rotates around the rotation axis Q1.

Note that the substrate holder 2 does not necessarily have to include a chuck 22. The substrate holder 2 may hold the substrate W by, for example, suction force or electrostatic force.

<Processing liquid nozzle>
The processing liquid nozzle 4 of the nozzle head 3 has, for example, a cylindrical shape. The processing liquid nozzle 4 has a discharge port 4a on its lower end surface. In the example of Fig. 3, the processing liquid nozzle 4 discharges the processing liquid obliquely. As a specific example, the processing liquid nozzle 4 discharges the processing liquid obliquely from the discharge port 4a so that the processing liquid lands on the center of the substrate W. In other words, the processing liquid nozzle 4 is located radially outward from the rotation axis Q1 in a plan view, and discharges the processing liquid from the radially outward direction toward the center of the substrate W.

One end of a processing liquid supply pipe 41 is connected to the processing liquid nozzle 4. In the example of FIG. 3, the processing liquid supply pipe 41 is arranged to pass through the first plasma generation unit 5. This connects the processing liquid nozzle 4 to the first plasma generation unit 5 via the processing liquid supply pipe 41. The other end of the processing liquid supply pipe 41 is connected to a processing liquid supply source 43. The processing liquid supply source 43 includes, for example, a tank that stores the processing liquid.

A valve 42 is installed in the processing liquid supply pipe 41. The valve 42 is controlled by the control unit 90, and when the valve 42 is opened, the processing liquid flows from the processing liquid supply source 43 through the processing liquid supply pipe 41 and is supplied to the processing liquid nozzle 4. This processing liquid is ejected from the outlet 4a of the processing liquid nozzle 4 toward the main surface of the substrate W. When the valve 42 is closed, the ejection of the processing liquid from the outlet 4a of the processing liquid nozzle 4 stops.

The substrate processing apparatus 1 may be configured to supply multiple types of processing liquid to the main surface of the substrate W. For example, the processing liquid nozzle 4 may have multiple processing liquid flow paths. In this case, each processing liquid flow path is individually connected to a processing liquid supply source of each type. Alternatively, the substrate processing apparatus 1 may include a nozzle separate from the nozzle head 3. Examples of multiple types of processing liquid that can be used include chemical liquids such as sulfuric acid, as well as pure water, ozone water, carbonated water, and rinse liquids such as isopropyl alcohol. Here, it is assumed that the processing liquid nozzle 4 has multiple processing liquid flow paths.

<First plasma generation unit>
The first plasma generating unit 5 is provided adjacent to the processing liquid nozzle 4 in a plan view. In the example of Fig. 3, the processing liquid nozzle 4 is located radially outward from the rotation axis Q1 in a plan view, so the first plasma generating unit 5 can be provided so that a part of the first plasma generating unit 5 faces the rotation axis Q1 in the vertical direction. In the example of Fig. 3, the first plasma generating unit 5 is provided at a position vertically facing a region extending from the center (rotation axis Q1) to the peripheral edge of the substrate W. That is, in the example of Fig. 3, the radial width of the first plasma generating unit 5 is equal to or greater than the radius of the substrate W.

Figures 4 to 7 are diagrams schematically illustrating an example of the configuration of the first plasma generating unit 5. Figure 4 shows a side cross-sectional view of the first plasma generating unit 5, and Figures 5 to 7 show the A-A, B-B, and C-C cross sections of Figure 4, respectively. As shown in Figure 4, the first plasma generating unit 5 includes a first unit main body 6 and a first electrode group 7.

The first unit body 6 forms a first gas flow path 60 for flowing gas from the gas supply unit 50 toward the main surface of the substrate W. The first electrode group 7 is provided downstream of the first gas flow path 60 and is configured to allow gas to pass through, as described below. The first electrode group 7 faces the main surface of the substrate W in the vertical direction. Gas passes through the first electrode group 7 from vertically above to vertically below, flowing toward the main surface of the substrate W. As the gas passes through the first electrode group 7 (i.e., the electric field space), an electric field is applied to the gas. The application of this electric field ionizes a portion of the gas, generating plasma. During this plasma generation, various active species are generated, and these active species are supplied to the main surface of the substrate W along the gas flow.

<First unit body>
The first unit body 6 is formed of an insulator (dielectric) such as quartz or ceramics, and has a first gas flow path 60 formed therein. In the example of Fig. 4, a plurality of gas division flow paths 61 are formed inside the first unit body 6 as parts of the downstream side of the first gas flow path 60. The plurality of gas division flow paths 61 are formed adjacent to one another in a plan view. In other words, the first unit body 6 is provided with one or more flow path dividers 63 that separate the plurality of gas division flow paths 61.

In the example of FIG. 4, three gas division flow paths 61a to 61c are formed as the multiple gas division flow paths 61. In the example of FIG. 4, the three gas division flow paths 61a to 61c are formed in this order, increasing from a position closer to the processing liquid nozzle 4 to a position farther away. In other words, the gas division flow path 61a is closest to the processing liquid nozzle 4, the gas division flow path 61b is next closest to the processing liquid nozzle 4, and the gas division flow path 61c is farthest from the processing liquid nozzle 4. In other words, the gas division flow paths 61a to 61b are arranged in this order in a plan view, increasing from a position closer to the rotation axis Q1 to a position farther away. In other words, the distance between the gas division flow path 61a and the rotation axis Q1 is shorter than the distance between the gas division flow path 61b and the rotation axis Q1, and the distance between the gas division flow path 61b and the rotation axis Q1 is shorter than the distance between the gas division flow path 61c and the processing liquid nozzle 4. The rotation axis Q1 can be understood as a virtual line extending infinitely in the vertical direction, so when the rotation axis Q1 passes through the gas division flow path 61a, the distance between the gas division flow path 61a and the rotation axis Q1 is zero.

In the illustrated example, flow path divider 63 includes flow path dividers 63a and 63b. Flow path divider 63a is located between gas division flow paths 61a and 61b and separates gas division flow paths 61a and 61b. Flow path divider 63b is located between gas division flow paths 61b and 61c and separates gas division flow paths 61b and 61c. Flow path divider 63a is located closer to rotation axis Q1 than flow path divider 63b.

The gas division channels 61a-61c are formed at positions that overlap the first electrode group 7 in a plan view. Each gas division channel 61a-61c opens vertically downward, and gas flows vertically downward from the lower opening of the gas division channel 61a-61c toward the first electrode group 7, passing vertically through the first electrode group 7. Because the gas division channels 61a-61c are formed at different positions from each other in a plan view, the gas from the gas division channels 61a-61c passes through different regions of the first electrode group 7.

In the example of Figure 5, the gas division flow path 61a has a semicircular shape in a plan view, and its arc surface follows an imaginary arc centered on the rotation axis Q1. The gas division flow path 61a faces the center of the substrate W in the vertical direction.

Gas division flow channels 61b are formed radially outward of gas division flow channels 61a. In the example of FIG. 5, gas division flow channels 61b have a semicircular arc shape of equal width in a plan view, and its radially inner arc surface follows the radially outer arc surface of gas division flow channel 61a. In other words, flow channel divider 63a has a semicircular arc plate shape, and its thickness direction follows the radial direction. The inner peripheral surface of such flow channel divider 63a forms the radially outer arc surface of gas division flow channel 61a, and the outer peripheral surface of flow channel divider 63a forms the radially inner arc surface of gas division flow channel 61b. Gas division flow channel 61b vertically faces an intermediate portion of substrate W that is radially outward of its center.

Gas division flow passage 61c is formed radially outward of gas division flow passage 61b. In the example of Figure 5, gas division flow passage 61c has an arcuate surface on the radially inner side, which is aligned with the arcuate surface on the radially outer side of gas division flow passage 61b. In other words, flow passage divider 63b has a semicircular plate shape and is disposed with its thickness aligned along the radial direction. The inner peripheral surface of such flow passage divider 63b forms the arcuate surface on the radially outer side of gas division flow passage 61b, and the outer peripheral surface of flow passage divider 63b forms the arcuate surface on the radially inner side of gas division flow passage 61c.

5, the gas division flow channels 61c are formed by a radially inner arcuate surface, a first surface extending in opposite directions from both ends of the arcuate surface, a second surface extending from the opposite ends of the first surface in a direction away from the processing liquid nozzle 4, and an arcuate surface connecting the ends of the second surface. In the example of FIG. 5, the arcuate surface of the gas division flow channels 61c has a shape that follows the periphery of the substrate W, and the radially outermost point of the arcuate surface is located radially outer than the periphery of the substrate W. In other words, at least a portion of the radially outer surface of the gas division flow channels 61c that is farthest from the rotation axis Q1 is located radially outer than the periphery of the substrate W. This gas division flow channel 61c vertically faces a peripheral portion of the substrate W that is radially outer than the middle portion.

In the examples shown in Figures 4 to 6, a gas supply flow path 62 for supplying gas to the gas division flow paths 61 is formed inside the first unit body 6 as part of the upstream side of the first gas flow path 60. The upstream opening 621 of the gas supply flow path 62 is formed, for example, on the radially outer side surface 601 of the first unit body 6. The side surface 601 is the side surface opposite the processing liquid nozzle 4 (see Figure 4). The downstream opening 622 of the gas supply flow path 62 is connected to the corresponding gas division flow path 61. In this example, gas division flow paths 61a to 61c are formed, and therefore gas supply flow paths 62a to 62c are formed corresponding to the gas division flow paths 61a to 61c, respectively.

The gas supply flow passages 62c are flow passages for supplying gas to the gas division flow passages 61c. In the example of Figure 5, multiple (five in the figure) gas supply flow passages 62c are formed. The downstream openings 622c of the multiple gas supply flow passages 62c are connected to the gas division flow passages 61c at different positions from each other in a plan view. More specifically, the downstream openings 622c of three gas supply flow passages 62c are formed on the arc-shaped surface on the radially outer side of the gas division flow passage 61c, and the downstream openings 622c of two gas supply flow passages 62c are formed on the second surfaces of the gas division flow passage 61c that face each other. This allows gas to be supplied to the gas division flow passages 61c from multiple locations, thereby enabling more uniform supply of gas to the gas division flow passages 61c.

In the example of Figure 5, the upstream openings 621c of the multiple gas supply flow paths 62c are formed side by side in the horizontal direction on the side surface 601 of the first unit body 6. Each gas supply flow path 62c extends from the upstream opening 621c in the horizontal plane to reach the downstream opening 622c. In the examples of Figures 4 and 5, each gas supply flow path 62c is formed in the same layer (height position) as the gas division flow paths 61a to 61c.

The gas supply flow path 62a is a flow path for supplying gas to the gas division flow path 61a. In the example of FIG. 4, the gas supply flow path 62a is formed in a layer (height position) vertically above the gas supply flow path 62c and the gas division flow paths 61a-61c. Here, the downstream opening 622a of the gas supply flow path 62a is formed on the upper surface vertically above the gas division flow path 61a (see also FIG. 6). Furthermore, the upstream opening 621a of the gas supply flow path 62a is formed on the side surface 601 of the first unit body 6, vertically above the upstream opening 621c of the gas supply flow path 62c. In the example of FIG. 6, the gas supply flow path 62a extends linearly in the horizontal plane from the upstream opening 621a to the downstream opening 622a formed on the upper surface of the gas division flow path 61a.

The gas supply flow path 62b is a flow path for supplying gas to the gas division flow paths 61b. In the example of FIG. 6, the gas supply flow path 62b is formed in the same layer (height position) as the gas supply flow path 62a. In the example of FIG. 6, multiple (two in the figure) gas supply flow paths 62b are formed, and the downstream openings 622b of the multiple gas supply flow paths 62b are connected to the gas division flow path 61b at different positions from each other in a plan view. Here, the downstream openings 622b are formed on the upper surface of the gas division flow path 61b. For example, the multiple downstream openings 622b may be formed on an imaginary arc centered on the rotation axis Q1. This allows gas to be supplied to the gas division flow path 61b from multiple locations, thereby more uniformly supplying gas to the gas division flow path 61b.

The upstream opening 621b of the gas supply flow path 62b is formed on the side surface 601 of the first unit body 6, vertically above the upstream opening 621c of the gas supply flow path 62c. In the example of Figure 6, the upstream openings 621b of the gas supply flow path 62b are formed on both horizontal sides of the upstream opening 621a of the gas supply flow path 62a. Each gas supply flow path 62b extends from the upstream opening 621b in the horizontal plane to the downstream opening 622b.

In addition, multiple gas supply flow paths 62a may be provided in the gas division flow path 61a closest to the rotation axis Q1, as necessary. This allows gas to be supplied to the gas division flow path 61a from multiple locations in a plan view, allowing gas to be supplied to the gas division flow path 61a more uniformly.

<Gas supply unit>
The gas supply unit 50 supplies gas to the first gas flow path 60 through the upstream port 621 of the first unit body 6. The gas supply unit 50 includes a gas supply pipe 51 and a valve 52. Here, since a plurality of gas supply flow paths 62a to 62c are formed, gas supply pipes 51a to 51c are provided as the gas supply pipe 51.

The upstream port 621c of each gas supply flow path 62c is connected to the downstream end of a gas supply pipe 51c (see Figure 5). Each gas supply pipe 51c is equipped with a valve 52c as a valve 52. The valve 52c is controlled by the control unit 90, and by switching the valve 52c open and closed, the supply of gas to each gas supply flow path 62c is switched on and off. The valve 52c may be a valve that can adjust the gas flow rate, or a separate flow rate adjustment valve may be provided on the gas supply pipe 51c.

The upstream port 621b of each gas supply flow path 62b is connected to the downstream end of the gas supply pipe 51b (see Figure 6). Each gas supply pipe 51b is equipped with a valve 52b as a valve 52. The valve 52b is controlled by the control unit 90, and by switching the valve 52b open or closed, the supply of gas to each gas supply flow path 62b is switched on and off. The valve 52b may be a valve that can adjust the gas flow rate, or a separate flow rate adjustment valve may be provided on the gas supply pipe 51b.

The upstream port 621a of the gas supply flow path 62a is connected to the downstream end of the gas supply pipe 51a (see Figure 6). A valve 52a serving as a valve 52 is installed in the gas supply pipe 51a. The valve 52a is controlled by the control unit 90, and by switching the valve 52a open and closed, the supply of gas to the gas supply flow path 62a is switched on and off. The valve 52a may be a valve capable of adjusting the gas flow rate, or a separate flow rate adjustment valve may be provided in the gas supply pipe 51a.

With this gas supply unit 50, the flow rate of gas flowing through the gas division flow paths 61a-61c can be individually adjusted. For example, the gas supply unit 50 can adjust the flow rate of gas in each of the gas division flow paths 61a-61c so that the gas flow velocity satisfies the following relationship. For example, the gas supply unit 50 can adjust each flow rate so that the gas flow velocity in the gas division flow path 61a is higher than the gas flow velocity in the gas division flow path 61b, and the gas flow velocity in the gas division flow path 61b is higher than the gas flow velocity in the gas division flow path 61c. In other words, the gas flow velocity is increased the closer to the rotation axis Q1. The effect of this will be described in detail later.

Furthermore, in the above example, each gas supply pipe 51c is provided with a valve 52c (flow rate adjustment valve), so the gas supply unit 50 can individually adjust the flow rate of gas in the multiple gas supply flow paths 62c. Therefore, the flow rate of gas flowing into the gas division flow path 61c can be adjusted for each of the multiple downstream ports 622c. This allows gas to be supplied more uniformly to the gas division flow paths 61c.

Furthermore, in the above example, each gas supply pipe 51b is provided with a valve 52b (flow rate adjustment valve), so the gas supply unit 50 can also individually adjust the flow rate of gas in the multiple gas supply flow paths 62b. Therefore, the flow rate of gas flowing into the gas division flow path 61b can be adjusted for each of the multiple downstream ports 622b. This allows gas to be supplied more uniformly to the gas division flow paths 61b.

In addition, multiple gas supply flow paths 62a and multiple gas supply pipes 51a may be provided corresponding to the gas division flow paths 61a, and a valve 52a (flow rate adjustment valve) may be installed in each gas supply pipe 51a. This allows the flow rate of gas flowing into the gas division flow paths 61a to be adjusted for each of the multiple downstream ports 622a, allowing gas to be supplied more uniformly to the gas division flow paths 61a.

<First plate-shaped body>
In the example of FIG. 4 , the first unit body 6 further includes a first plate-like body 64. The first plate-like body 64 is provided in the first gas flow path 60. Specifically, the first plate-like body 64 is provided upstream of the gas flow relative to the first electrode group 7 and is provided in a position vertically facing the first electrode group 7. The first plate-like body 64 has a plate-like shape and is disposed with its thickness direction aligned vertically. A plurality of openings 641 are formed in the first plate-like body 64. The plurality of openings 641 penetrate the first plate-like body 64 vertically and have, for example, a circular shape in a plan view. The plurality of openings 641 are arranged, for example, two-dimensionally in a plan view; more specifically, they are arranged in a matrix. The gas flowing through the first gas flow path 60 flows toward the first electrode group 7 through the plurality of openings 641.

In this embodiment, two first plates 64a and 64b (see also Figure 4) are provided as the first plate 64. The first plate 64a is provided to correspond to the gas division channels 61a and 61b. The first plate 64a has a semicircular shape in a plan view and faces the gas division channels 61a and 61b in the vertical direction. Specifically, the lower end of the channel divider 63a is connected to the upper surface of the first plate 64a. The region of the first plate 64a radially inward from the channel divider 63a faces the gas division channel 61a in the vertical direction, while the region radially outward from the channel divider 63a faces the gas division channel 61b in the vertical direction. Gas flowing through the gas division channels 61a and 61b passes through multiple openings 641 in the first plate 64a and flows toward the first electrode group 7.

The first plate-shaped body 64b is provided corresponding to the gas division flow path 61c. The first plate-shaped body 64b has the same shape as the gas division flow path 61c in a plan view and faces the gas division flow path 61c in the vertical direction. Gas flowing through the gas division flow path 61c passes through multiple openings 641 in the first plate-shaped body 64b and flows toward the first electrode group 7.

In this way, the gas flowing through each gas dividing flow path 61 passes through the multiple openings 641 in the first plate-like body 64 and flows toward the first electrode group 7. This allows the gas to flow more uniformly toward the first electrode group 7. If the distance between the first plate-like body 64 and the first electrode group 7 is too long, the gas uniformity may decrease, so the distance should be set with consideration given to the gas uniformity.

In the example shown in Figure 5, the size of the opening 641 differs between the first plate-shaped bodies 64a and 64b. This will be described in more detail later.

<Processing liquid supply pipe>
4, the processing liquid supply pipe 41 connected to the processing liquid nozzle 4 penetrates the first unit body 6 at a layer (height position) vertically above the gas supply flow path 62a. That is, the first unit body 6 has a multi-layer flow path structure in the vertical direction. Specifically, the uppermost layer of the first unit body 6 is formed with a processing liquid flow path (processing liquid supply pipe 41) through which the processing liquid flows toward the processing liquid nozzle 4. The middle layer of the first unit body 6 is formed with gas supply flow paths 62a and 62b through which gas flows toward the gas division flow paths 61a and 61b. The lowermost layer of the first unit body 6 is formed with gas division flow paths 61a to 61c and a gas supply flow path 62c through which gas flows toward the gas division flow path 61c.

<First electrode group>
As described above, the first electrode group 7 is provided downstream of the first gas flow path 60, and is provided in a region overlapping with the first gas flow path 60 in a plan view. Specifically, the first electrode group 7 is provided in a region overlapping with the gas dividing flow paths 61a to 61c in a plan view.

The first electrode group 7 includes a plurality of first electrodes 71. The plurality of first electrodes 71 are formed from a conductor such as metal, and are arranged side by side at intervals in a plan view (see Figure 7). In the example of Figure 7, each first electrode 71 has an elongated shape that is long in the horizontal direction. An elongated shape here refers to a shape in which the longitudinal size of the first electrode 71 is longer than the horizontal size perpendicular to the longitudinal direction. In the example of Figure 7, the plurality of first electrodes 71 are arranged with their longitudinal direction perpendicular to the radial direction.

The multiple first electrodes 71 are arranged side by side at intervals in a horizontal arrangement direction (here, the radial direction) perpendicular to the longitudinal direction. In the example of Figure 7, six first electrodes 71a to 71f are shown as the multiple first electrodes 71. The first electrodes 71a to 71f are arranged in this order from one side to the other in the arrangement direction. The first electrodes 71a to 71d are arranged, for example, in the same plane.

Of the multiple first electrodes 71, two adjacent ones are applied with potentials of different polarities. In the example of Figure 7, the odd-numbered first electrodes 71a, 71c, and 71e from one side in the arrangement direction are connected to each other via a connecting portion 711a at one end (base end) in the longitudinal direction. The connecting portion 711a has, for example, a plate shape and is made integrally with, for example, the first electrodes 71a, 71c, and 71e using the same material. The connecting portion 711a is connected to the first output terminal 81 of the power source 80 via a lead-out wiring.

In the example of Figure 7, the first electrodes 71b, 71d, and 71f arranged in even positions from one side in the arrangement direction are connected to each other via connecting portions 711b at the ends (base ends) on the other side in the longitudinal direction. The connecting portions 711b have, for example, a plate shape and are integrally formed from the same material as the first electrodes 71b, 71d, and 71f. In such a first electrode group 7, the multiple first electrodes 71 are arranged in a comb-like pattern. The connecting portions 711b are connected to the second output terminal 82 of the power source 80 via lead wiring.

The power supply 80 includes, for example, a switching power supply circuit (e.g., an inverter circuit) and is controlled by the control unit 90. The power supply 80 applies a voltage (e.g., a high-frequency voltage) between the first output terminal 81 and the second output terminal 82. This generates an electric field in the space (electric field space) between the multiple first electrodes 71.

Because the first electrode group 7 is located downstream of the first gas flow path 60, gas flowing along the first gas flow path 60 passes through the electric field space between the multiple first electrodes 71. As the gas passes through the electric field space, the electric field acts on the gas, ionizing part of the gas and generating plasma (plasma generation process). During this plasma generation, various active species are produced, and these active species move along the gas flow toward the main surface of the substrate W.

The distance between the first electrode group 7 and the substrate W is set to a distance that prevents arc discharge between the first electrode group 7 and the substrate W. The distance between the first electrode group 7 and the substrate W is set to, for example, approximately 2 mm or more and approximately 5 mm or less.

<Dielectric protection member>
4 and 7 , each first electrode 71 is covered with a dielectric protective member 72. The dielectric protective member 72 is formed of an insulator (dielectric) such as quartz or ceramics, and covers the surface of the first electrode 71. For example, the dielectric protective member 72 is in close contact with the surface of the first electrode 71. The dielectric protective member 72 may be a dielectric film formed on the surface of the first electrode 71. This dielectric protective member 72 can protect the first electrode 71 from plasma. In the example of FIG. 4 , each first electrode 71 has a circular cross section, and each dielectric protective member 72 has an annular cross section.

<Dielectric partition member>
4 and 7 , a dielectric partition member 73 is provided between two adjacent first electrodes 71. Specifically, the dielectric partition member 73 is provided between all two of the multiple first electrodes 71. The dielectric partition member 73 is formed of an insulator (dielectric) such as quartz or ceramics, and is provided at a distance from each first electrode 71. The dielectric partition member 73 has, for example, a plate shape, and is provided with its thickness direction aligned with the arrangement direction (here, the radial direction) of the first electrodes 71. The main surface of the dielectric partition member 73 has, for example, a rectangular shape that is long in the longitudinal direction of the first electrodes 71.

In the example of Figure 4, the upper end of the dielectric partition member 73 is located higher than the upper end of the first electrode 71, and the lower end of the dielectric partition member 73 is located lower than the lower end of the first electrode 71. Taking into account manufacturing variations, for example, the lowest upper end position of the multiple dielectric partition members 73 is higher than the highest upper end position of the multiple first electrodes 71, and the highest lower end position of the multiple dielectric partition members 73 is lower than the lowest lower end position of the multiple first electrodes 71.

By providing such a dielectric partition member 73, it is possible to increase the insulation distance between the multiple first electrodes 71. This makes it possible to increase the voltage across the multiple first electrodes 71 to generate plasma more efficiently, while also suppressing the occurrence of arc discharge between the multiple first electrodes 71.

<Frame>
4 and 7 , each dielectric partition member 73 is connected to a frame body 74. The frame body 74 is also formed of an insulator (dielectric) such as quartz or ceramics. The frame body 74 surrounds the plurality of dielectric partition members 73 in a plan view, and both longitudinal ends of each dielectric partition member 73 are connected to the inner surface of the frame body 74.

The frame 74 also substantially surrounds the multiple first electrodes 71. In the illustrated example, the connecting portions 711a and 711b are located outside the frame 74, and each of the first electrodes 71a, 71c, and 71e penetrates the frame 74 on one longitudinal side and is connected to the connecting portion 711a, while each of the first electrodes 71b, 71c, and 71f penetrates the frame 74 on the other longitudinal side and is connected to the connecting portion 711b. In other words, most of the first electrodes 71 are located inside the frame 74. This frame 74 is connected, for example, to the lower end of the first unit main body 6.

Gas from the gas dividing channels 61a-61c passes through the first electrode group 7 within the frame 74. Specifically, the gas passes downward through the space between the multiple first electrodes 71 and the multiple dielectric partition members 73. When the electric field generated in the electric field space between the multiple first electrodes 71 acts on the gas, part of the gas is ionized, generating plasma. Various active species are generated during this plasma generation. These active species move downward along with the gas flow and flow out toward the main surface of the substrate W.

As described above, the nozzle head 3 can supply processing liquid and gas to the main surface of the substrate W using the processing liquid nozzle 4 and the first plasma generation unit 5.

<Operation of the substrate processing apparatus>
Next, an example of the operation of the substrate processing apparatus 1 will be described. Fig. 8 is a flowchart showing an example of the operation of the substrate processing apparatus 1. First, an unprocessed substrate W is loaded into the substrate processing apparatus 1 by the main transport robot 120 (step S1). Here, a resist is formed on the upper surface of the substrate W. The substrate holding part 2 of the substrate processing apparatus 1 holds the loaded substrate W. Next, the substrate holding part 2 starts to rotate the substrate W around the rotation axis Q1 (step S2).

Next, chemical solution processing is performed (step S3). Specifically, first, the head movement mechanism 30 moves the nozzle head 3 from the standby position to the processing position. Next, the valves 42, 52a to 52c open, and the power supply 80 applies a voltage to the first electrode 71.

When the valve 42 is opened, the processing liquid (here, a chemical liquid such as sulfuric acid) is ejected from the outlet 4a of the processing liquid nozzle 4 toward the top surface of the substrate W. Here, the chemical liquid is supplied toward the center of the substrate W. The chemical liquid that has landed on the top surface of the rotating substrate W flows radially outward along the top surface of the substrate W and splashes outward from the periphery of the substrate W. This allows the chemical liquid to act on the entire top surface of the substrate W.

When valves 52a-52c are opened, gas (here, a mixture of oxygen-containing gas and rare gas) is supplied from the gas supply unit 50 to the first gas flow path 60 via upstream ports 621a-621c. The gas then flows into the gas division flow paths 61a-61c via the gas supply flow paths 62a-62c.

Here, gas is supplied at a first flow rate to the gas division flow path 61c, which is farthest from the rotation axis Q1, at a second flow rate greater than the first flow rate to the gas division flow path 61b, which is next farthest from the rotation axis Q1, and at a third flow rate greater than the second flow rate to the gas division flow path 61a, which is closest to the rotation axis Q1.

Gas flowing downward through the gas dividing channels 61a and 61b passes through multiple openings 641 in the first plate-shaped body 64a. This rectifies the gas flow, allowing it to flow more uniformly toward the first electrode group 7. Similarly, gas flowing downward through the gas dividing channel 60c passes through multiple openings 641 in the first plate-shaped body 64b. This rectifies the gas flow, allowing it to flow more uniformly toward the first electrode group 7.

The power supply 80 applies a voltage to the first electrodes 71, generating an electric field in the electric field space between the first electrodes 71 in the first electrode group 7. As the gas passes through the electric field space, the electric field acts on the gas, ionizing part of the gas and generating plasma. When this plasma is generated, various reactions occur, such as dissociation and excitation of molecules and atoms due to electron collision reactions, generating various active species such as highly reactive neutral radicals (e.g., oxygen radicals). For example, argon gas is converted into plasma by the electric field, and the plasma acts on an oxygen-containing gas to generate oxygen radicals. These active species (e.g., oxygen radicals) move along the gas flow and flow out toward the top surface of the substrate W.

The active species act on the chemical solution on the upper surface of the substrate W. For example, when oxygen radicals act on sulfuric acid on the upper surface of the substrate W, the oxidizing power of the oxygen radicals generates peroxomonosulfuric acid (Caro's acid). When using a treatment solution containing sulfuric acid, the higher the sulfuric acid concentration, the stronger the expected stripping power; a concentration in the range of 94 to 98% is preferable, and the closer to 98%, the more preferable. Caro's acid can effectively remove resist from the upper surface of the substrate W. In other words, the active species act on the chemical solution, improving the treatment capacity of the chemical solution.

This substrate processing apparatus 1 does not use hydrogen peroxide water to generate Caro's acid. Therefore, when recovering and reusing sulfuric acid, it is possible to recover sulfuric acid at a higher concentration.

In addition, the activated species can act not only on the chemical solution on the main surface of the substrate W, but also directly on the substrate W. For example, oxygen radicals can also directly act on the resist on the substrate W, thereby removing the resist due to the oxidizing power of the oxygen radicals.

In the above example, the processing liquid nozzle 4 ejects the chemical liquid toward the center of the substrate W in an oblique direction inclined from the vertical. Therefore, the chemical liquid that lands in the center of the substrate W flows radially outward. This allows the chemical liquid film formed on the upper surface of the substrate W to be thinner than when the chemical liquid is ejected in the vertical direction. This allows the active species to act on the chemical liquid at a position closer to the upper surface of the substrate W. Therefore, the chemical liquid with improved processing capacity can more easily act on the substrate W. It also makes it easier for the active species to act directly on the main surface of the substrate W.

When the resist on the substrate W has been sufficiently removed by the chemical solution and activated species, the valves 42, 52a-52c close and the power supply 80 stops outputting voltage. This stops the discharge of the chemical solution from the processing solution nozzle 4 and also stops the outflow of gas from the first plasma generation unit 5. This essentially ends the chemical solution processing (here, the resist removal process).

Next, a rinse process is performed (step S4). Specifically, the substrate processing apparatus 1 ejects a rinse liquid from, for example, the processing liquid nozzle 4 toward the top surface of the substrate W. This replaces the chemical liquid on the top surface of the substrate W with the rinse liquid.

When the chemical liquid on the upper surface of the substrate W has been sufficiently replaced with the rinse liquid, the treatment liquid nozzle 4 stops ejecting the rinse liquid, and the head moving mechanism 30 moves the nozzle head 3 to the standby position.

Next, a drying process is performed (step S5). For example, the substrate holder 2 increases the rotation speed of the substrate W. This causes the rinse liquid on the top surface of the substrate W to be shaken off from the periphery of the substrate W, drying the substrate W (so-called spin drying).

Once the substrate W has dried, the substrate holder 2 stops rotating the substrate W (step S6). Next, the processed substrate W is unloaded from the substrate processing apparatus 1 by the main transport robot 120 (step S7).

<Effects of the embodiment>
In this substrate processing apparatus 1, the processing liquid nozzle 4 and the first plasma generating unit 5 are arranged adjacent to each other in a plan view. The processing liquid discharged from the processing liquid nozzle 4 and landing on the main surface of the substrate W flows over the main surface of the substrate W, and the first plasma generating unit 5 supplies gas toward the main surface of the substrate W, causing the activated species to act on the processing liquid on the main surface of the substrate W. This improves the processing capacity of the processing liquid on the main surface of the substrate W. Therefore, the processing liquid acts on the main surface of the substrate W with improved processing capacity, allowing the substrate W to be processed in a shorter time.

Furthermore, in the substrate processing apparatus 1, the multiple first electrodes 71 of the first electrode group 7 are arranged side by side in a planar view. For example, the multiple first electrodes 71, each having a long, horizontally elongated shape, are arranged side by side with a gap between them in their short side direction (arrangement direction). This makes it easy to increase the area of the first electrode group 7 in a planar view. Therefore, plasma can be generated over a wide area in a planar view, and active species can be supplied to the main surface of the substrate W over a wide area. This allows the substrate W to be processed more uniformly.

In the above example, the treatment liquid nozzle 4 and the first plasma generating unit 5 are integrally connected to each other. Therefore, the head moving mechanism 30 can move the treatment liquid nozzle 4 and the first plasma generating unit 5 as a unit. This allows the treatment liquid nozzle 4 and the first plasma generating unit 5 to be moved with a simple configuration. That is, unlike the present embodiment, if the treatment liquid nozzle 4 and the first plasma generating unit 5 were not connected to each other, a moving mechanism would be required to move them individually. In contrast, in the present embodiment, a single head moving mechanism 30 is sufficient. Therefore, the treatment liquid nozzle 4 and the first plasma generating unit 5 can be moved with a simple configuration, reducing the device size and manufacturing costs.

Furthermore, in the above example, the first plate-like body 64 having a plurality of openings 641 is provided upstream of the first electrode group 7. This allows the gas that has passed through the plurality of openings 641 to pass through the first electrode group 7 more uniformly. As a result, the gas passes through the electric field space more uniformly, and plasma is generated more uniformly. This in turn allows active species to be generated more uniformly and supplied more uniformly to the main surface of the substrate W.

In the above example, a flow path divider 63 is provided that radially divides the first gas flow path 60 into multiple gas division flow paths 61. This makes it possible to adjust the gas flow rate for each gas division flow path 61. For example, the flow rate in each gas division flow path 61 can be adjusted so that the gas flow velocity in the gas division flow path 61 closest to the rotation axis Q1 is higher than the gas flow velocity in the gas division flow path 61 farther from the rotation axis Q1. More specifically, the flow rate in each gas division flow path 61a-61c can be adjusted so that the gas flow velocity in the gas division flow path 61a closest to the rotation axis Q1 is the highest, the gas flow velocity in the gas division flow path 61b next closest to the rotation axis Q1 is the next highest, and the gas flow velocity in the gas division flow path 61c farthest from the rotation axis Q1 is the lowest.

It is known that activated species such as oxygen radicals are deactivated in a short time. Therefore, the slower the gas flow rate, the more likely the activated species are to be deactivated before reaching the main surface of the substrate W. As described above, if the gas flow rate in the gas division flow channel 61a is high, more activated species can reach the top surface of the substrate W at positions close to the rotation axis Q1. On the other hand, because the gas flow rate in the gas division flow channels 61b and 61c is relatively low, fewer activated species reach the top surface of the substrate W at positions farther from the rotation axis Q1.

The processing liquid that has landed in the center of the substrate W flows radially outward, that is, away from the rotation axis Q1, as the substrate W rotates. Therefore, gas is first supplied to the processing liquid from the gas division flow channel 61a, supplying more activated species. Then, as the processing liquid flows radially outward along the main surface of the substrate W, gas is supplied from the gas division flow channel 61b to the intermediate portion of the substrate W that is radially outward from the central portion. As the processing liquid flows further radially outward, gas is supplied from the gas division flow channel 61c to the peripheral portion of the substrate W that is radially outward from the intermediate portion. Thus, the amount of activated species supplied to the processing liquid decreases as the processing liquid flows radially outward.

Now, while some of the active components (here, Caro's acid) produced by the action of the active species on the processing liquid at the center of the substrate W act on the main surface at the center of the substrate W and are consumed, the remaining components flow radially outward along the substrate W with the processing liquid. Therefore, in the intermediate portion of the substrate W, which is radially outward from the center, active components from the active species supplied at the center of the substrate W may remain. Therefore, if active species are supplied to the processing liquid at the intermediate portion of the substrate W in the same amount as at the center, the active components in the processing liquid at the intermediate portion will be greater than the active components in the processing liquid at the central portion, which may reduce the uniformity of processing for the substrate W. Similarly, if active species are supplied to the processing liquid at the peripheral portion of the substrate W in the same amount as at the central portion, the active components in the processing liquid at the peripheral portion will be greater than the active components in the processing liquid at the central portion, which may reduce the uniformity of processing for the substrate W.

In contrast, in the above example, as the processing liquid flows radially outward from the substrate W, fewer activated species are supplied to the processing liquid. This further improves the uniformity of processing of the substrate W. Moreover, gas consumption can be reduced compared to when gas is supplied to all gas division channels 61 at a high flow rate.

In addition, in the above example, a dielectric partition member 73 is provided between the first electrodes 71. This makes it possible to suppress arc discharge between the first electrodes 71 while increasing the voltage applied to the first electrodes 71 to promote plasma generation.

In the above example, the radial width of the first gas flow path 60 of the first plasma generating unit 5 immediately before the first electrode group 7 is equal to or greater than the radius of the substrate W, the overall radial width of the electric field space around the first electrode group 7 is also equal to or greater than the radius of the substrate W, and the radial width of the frame 74 is also equal to or greater than the radius of the substrate W. Such a first plasma generating unit 5 supplies gas to a region of the substrate W that is equal to or greater than the radius of the substrate W, including the center and peripheral edges. Therefore, by supplying gas to the main surface of the substrate W while it is rotating, the first plasma generating unit 5 can supply active species to the entire main surface of the substrate W.

<First electrode group>
FIG. 9 is a cross-sectional view schematically illustrating another example of the configuration of the first electrode group 7. In the example of FIG. 9, the first electrodes 71 have a rectangular cross-section. In the example of FIG. 9, the vertical width (i.e., height) of the first electrodes 71 is wider than the width in the arrangement direction (here, the radial direction) of the first electrodes 71. Because gas flows vertically through the electric field space between the first electrodes 71, a wider vertical width of the first electrodes 71 allows the electric field to act on the gas for a longer period of time. This allows plasma to be generated over a wider range in the vertical direction, and more active species to be generated.

In the example of Figure 9, the dielectric protection members 72 also have a rectangular cross-section. In the example of Figure 9, the width (i.e., height) of the dielectric protection members 72 in the vertical direction is also wider than the width in the arrangement direction. This makes it possible to regulate the flow of gas flowing vertically between the dielectric protection members 72.

In the example shown in Figure 9, no dielectric partition member 73 is provided. In this case, arc discharge between the first electrodes 71 can be suppressed by setting the width of the dielectric protection member 72 in the arrangement direction to be relatively wide.

<Area of opening>
5, the areas of the multiple openings 641 in the first plate-like body 64 vary depending on the distance from the rotation axis Q1. For example, the area of the openings 641 closer to the rotation axis Q1 is smaller than the area of the openings 641 farther from the rotation axis Q1. More specifically, the first plate-like body 64a is located closer to the rotation axis Q1 than the first plate-like body 64b, and the area of the openings 641 formed in the first plate-like body 64a is smaller than the area of the openings 641 formed in the first plate-like body 64b.

Here, focusing on one opening 641 (hereinafter referred to as the first opening 641) in the first plate-shaped body 64a and one opening 641 (hereinafter referred to as the second opening 641) in the first plate-shaped body 64b, the following explanation can be given: The distance between the first opening 641 and the rotation axis Q1 is shorter than the distance between the second opening 641 and the rotation axis Q1, and the area of the first opening 641 is smaller than the area of the second opening 641.

This allows the gas flow rate to be increased near the rotation axis Q1. This allows more activated species to be supplied to the processing liquid at the center of the substrate W, improving the uniformity of processing of the substrate W.

Second Embodiment
The substrate processing apparatus 1 according to the second embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment, except for the configuration of the first unit body 6 of the nozzle head 3. Fig. 10 is a diagram schematically showing an example of the configuration of the nozzle head 3 according to the second embodiment.

In the second embodiment, the first unit body 6 houses the first electrode group 7. The first electrode group 7 is provided inside the first unit body 6, downstream of the first gas flow path 60.

The first unit body 6 further includes a shutter 65. The shutter 65 is provided at the lower end of the first unit body 6, downstream of the first electrode group 7. The shutter 65 is controlled by the control unit 90 to open and close the outlet of the first gas flow path 60 formed at the lower end of the first unit body 6. The specific configuration of the shutter 65 is not particularly limited, but an example will be briefly described below.

Figure 11 is a side cross-sectional view schematically illustrating an example of the configuration near the outlet of the first gas flow path 60. In the example of Figure 11, a second plate-shaped body 66 is provided in the first unit main body 6. The second plate-shaped body 66 is provided downstream of the first electrode group 7 in the first gas flow path 60, with its thickness direction aligned vertically. Figure 12 is a plan view schematically illustrating an example of the configuration of the second plate-shaped body 66. In the example of Figure 12, the second plate-shaped body 66 has, for example, a rectangular shape in plan view, with one radially outer side curved in an arc. The periphery of the second plate-shaped body 66 is connected to the lower end of the first unit main body 6. The second plate-shaped body 66 has multiple openings 661 formed therein, which serve as outlets for the first gas flow path 60. Hereinafter, the openings 661 will also be referred to as outlets 661. The multiple outlets 661 penetrate the second plate-shaped body 66 in its thickness direction. The multiple outlets 661 are arranged, for example, two-dimensionally in a plan view, and more specifically, arranged in a matrix. The outlets 661 have, for example, a circular shape in a plan view.

The shutter 65 switches the outlet 661 between open and closed states. The shutter 65 has, for example, a plate-like shape and is arranged with its thickness aligned vertically. The shutter 65 is arranged, for example, so as to overlap the second plate-like body 66. The shutter 65 also has a plurality of openings 651. The plurality of openings 651 penetrate the shutter 65 vertically. The plurality of openings 651 are arranged in the same manner as the outlet 661 in a plan view. The plurality of openings 651 have, for example, a circular shape, and the diameter of the openings 651 is, for example, greater than or equal to the diameter of the outlet 661.

The shutter 65 is provided so as to be horizontally movable relative to the second plate-shaped body 66. The shutter 65 can move back and forth between a first position, in which the multiple openings 651 are horizontally offset from the multiple outlets 661, and a second position, in which the multiple openings 651 face the multiple outlets 661, respectively. In the first position, the portions of the shutter 65 other than the openings 651 face the multiple outlets 661, closing the outlets 661. Figure 11 shows the shutter 65 stopped in the first position. In the second position, the openings 651 of the shutter 65 face the corresponding outlets 661, and the outlets 661 are connected to the external space through the corresponding openings 651. In other words, the outlets 661 are open.

The drive unit 67 is controlled by the control unit 90 and can drive the shutter 65. For example, the drive unit 67 moves the shutter 65 back and forth between a first position and a second position. The drive unit 67 has a drive mechanism such as a ball screw mechanism or an air cylinder.

The shutter 65 may have a plate-like shape without the opening 651. In this case, for example, the drive unit 67 may move the shutter 65 back and forth between a position where the shutter 65 does not vertically face the second plate-like body 66 and a position where the shutter 65 faces the second plate-like body 66.

When the shutter 65 closes the outlet 661, the gas supplied from the gas supply unit 50 remains in the first gas flow path 60 of the first unit body 6. This increases the amount of activated species (concentration of activated species) in the first gas flow path 60. Then, by opening the outlet 661 in this state, the shutter 65 allows more activated species to flow out from the outlet 661 of the first plasma generating unit 5.

An example of the operation of the substrate processing apparatus 1 according to the second embodiment is the same as that shown in FIG. 8. However, at the start of chemical liquid processing (step S3), the shutter 65 closes the outlet 661, and valve 42 is closed, and valves 52a to 52c are first opened. As a result, prior to the supply of processing liquid, gas is supplied from the gas supply unit 50 to the first plasma generation unit 5. This gas remains in the first gas flow path 60. In addition, the power supply 80 applies a voltage to the first electrode 71. As a result, a portion of the gas is ionized in the electric field space around the first electrode group 7, generating plasma. Activated species are also generated during the generation of this plasma. Because the shutter 65 is closed, the gas remaining in the electric field space is subjected to the electric field for a relatively long period of time, generating more plasma and producing more activated species during the generation of this plasma.

Then, the valve 42 is opened to supply the processing liquid from the processing liquid nozzle 4 to the main surface of the substrate W, and the shutter 65 is opened to supply the gas to the main surface of the substrate W. By opening the shutter 65, more of the activated species remaining in the first gas flow path 60 flow out toward the main surface of the substrate W. As a result, more activated species act on the processing liquid on the main surface of the substrate W and on the main surface of the substrate W. This further improves the processing capacity of the processing liquid, and also increases the number of activated species that act directly on the main surface of the substrate W. As a result, the processing time for the substrate W can be shortened.

Furthermore, in the above example, multiple outlets 661 are provided, which allows the active species to be supplied more uniformly to the main surface of the substrate W.

During the chemical liquid treatment (step S3), the shutter 65 may be opened intermittently. That is, the shutter 65 may be alternately opened and closed at predetermined intervals. When the shutter 65 closes the outlet 661, gas remains in the first gas flow path 60, generating more activated species. When the shutter 65 opens the outlet 661, these activated species can be supplied to the main surface of the substrate W from the outlet 661 along the gas flow.

Furthermore, in the above example, the shutter 65 is provided between the first electrode group 7 and the substrate W, so the first electrode group 7 is located farther away from the substrate W. Therefore, the plasma generated in the electric field space around the first electrode group 7 is less likely to reach the substrate W. This makes it possible to suppress damage to the substrate W caused by the plasma.

<Outlet area>
12 , the area of the outlets 661 in the region close to the rotation axis Q1 is smaller than the area of the outlets 661 in the region far from the rotation axis Q1. Focusing on one outlet 661 in the region close to the rotation axis Q1 (hereinafter referred to as the first outlet 661) and one outlet 661 in the region far from the rotation axis Q1 (hereinafter referred to as the second outlet 661), the following explanation can be given: The distance between the first outlet 661 and the rotation axis Q1 is shorter than the distance between the second outlet 661 and the rotation axis Q1, and the area of the first outlet 661 is smaller than the area of the second outlet 661.

This allows the gas flow rate to be increased at positions closer to the rotation axis Q1. Therefore, more activated species can be supplied to the processing liquid at the center of the substrate W, improving the uniformity of processing of the substrate W.

Third Embodiment
An example of the configuration of the substrate processing apparatus 1 according to the third embodiment has the same configuration as the substrate processing apparatus 1 according to the first or second embodiment, except for the first electrode group 7. In the third embodiment, the electric field strength distribution in the electric field space is adjusted. Specifically, the first electrode group 7 applies an electric field with a higher electric field strength in a space close to the rotation axis Q1 and with a lower electric field strength in a space far from the rotation axis Q1.

Figure 13 is a plan view schematically illustrating another example of the configuration of the first electrode group 7. In the example of Figure 13, six first electrodes 71a to 71f are provided as the multiple first electrodes 71. The first electrodes 71a to 71f are arranged in this order from the side closest to the rotation axis Q1. In other words, the first electrode 71a is closest to the rotation axis Q1, and the first electrode 71f is the farthest from the rotation axis Q1. Therefore, the distance between the electric field space formed by the first electrodes 71a and 71b and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71b and 71c and the rotation axis Q1; the distance between the electric field space formed by the first electrodes 71b and 71c and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71c and 71d and the rotation axis Q1; the distance between the electric field space formed by the first electrodes 71c and 71d and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71d and 71e and the rotation axis Q1; and the distance between the electric field space formed by the first electrodes 71d and 71e and the rotation axis Q1 is shorter than the distance between the electric field space formed by the first electrodes 71e and 71f and the rotation axis Q1. Furthermore, the spacing between the first electrodes 71a through 71f is approximately the same.

In the example of Figure 13, a resistor 83 is provided between the first electrode 71c and the first output terminal 81 of the power supply 80, and a resistor 84 is provided between the first electrode 71e and the first output terminal 81 of the power supply 80. When current flows through each resistor 83, 84, a voltage drop occurs in each. The resistance value of resistor 84 is higher than that of resistor 83, and the voltage drop across resistor 84 is greater than the voltage drop across resistor 83. In the example of Figure 13, the fact that the resistance value of resistor 84 is greater than that of resistor 83 is indicated by the number of resistors. In the example of Figure 13, neither resistor 83 nor 84 is provided between the first electrode 71a and the first output terminal 81 of the power supply 80. In other words, the resistance value between the first electrode 71a closest to the rotation axis Q1 and the first output end 81 is smaller than the resistance value between the first electrode 71c next closest to the rotation axis Q1 and the first output end 81, and the resistance value between the first electrode 71c and the first output end 81 is smaller than the resistance value between the first electrode 71e farthest from the rotation axis Q1 and the first output end 81.

In the example of Figure 13, neither resistor 83 nor resistor 84 is provided between each of the first electrodes 71b, 71d, 71f and the second output terminal 82 of the power supply 80, and the resistance values between each of the first electrodes 71b, 71d, 71f and the second output terminal 82 are approximately the same.

With this connection relationship, the voltage between first electrodes 71a and 71b is greater than the voltage between first electrodes 71b and 71c, the voltage between first electrodes 71b and 71c is approximately the same as the voltage between first electrodes 71c and 71d, the voltage between first electrodes 71c and 71d is greater than the voltage between first electrodes 71d and 71e, and the voltage between first electrodes 71d and 71e is approximately the same as the voltage between first electrodes 71e and 71f. In other words, the voltage between first electrodes 71 tends to increase the closer they are to the rotation axis Q1. Therefore, the electric field strength between first electrodes 71 tends to increase the closer they are to the rotation axis Q1. Specifically, the electric field strength is highest in the electric field space between first electrodes 71a and 71b, next highest in the electric field space between first electrodes 71b and 71c and between first electrodes 71c and 71d, and lowest in the electric field space between first electrodes 71d and 71e and between first electrodes 71e and 71f.

With this first electrode group 7, an electric field of high electric field strength acts on gas passing through the electric field space between the first electrodes 71a, 71b close to the rotation axis Q1. As a result, more plasma is generated at positions closer to the rotation axis Q1, and more active species are produced. An electric field of lower electric field strength acts on gas passing through the electric field space between the first electrodes 71b-71d farther from the rotation axis Q1, and an electric field of even lower electric field strength acts on gas passing through the electric field space between the first electrodes 71d-71f further away from the rotation axis Q1. Therefore, fewer active species are produced the further away from the rotation axis Q1.

As described above, according to the third embodiment, a large number of activated species can be generated at a position close to the rotation axis Q1. This can improve the uniformity of processing on the substrate W.

In FIG. 13, the first electrode 71d may also be connected to the second output terminal 82 of the power supply 80 via a resistor 83. This allows the electric field strength in the electric field space between the first electrodes 71b and 71c to be higher than the electric field strength in the electric field space between the first electrodes 71c and 71d. Similarly, the first electrode 71f may also be connected to the second output terminal 82 of the power supply 80 via a resistor 84. This allows the electric field strength in the electric field space between the first electrodes 71d and 71e to be higher than the electric field strength in the electric field space between the first electrodes 71e and 71f.

Figure 14 is a plan view schematically illustrating another example of the configuration of the first electrode group 7. In the example of Figure 14, power sources 80a to 80c are provided as the power source 80. The first electrode 71a is connected to the first output terminal 81 of the power source 80a, the first electrode 71b is connected to the second output terminal 82 of the power source 80a, the first electrode 71c is connected to the first output terminal 81 of the power source 80b, the first electrode 71d is connected to the second output terminal 82 of the power source 80b, the first electrode 71e is connected to the first output terminal 81 of the power source 80c, and the first electrode 71f is connected to the second output terminal 82 of the power source 80b. In other words, the pair of first electrodes 71a, 71b closest to the rotation axis Q1 is connected to the power source 80a, the pair of first electrodes 71c, 71d next closest to the rotation axis Q1 is connected to the power source 80b, which is different from the power source 80a, and the pair of first electrodes 71e, 71f farthest from the rotation axis Q1 is connected to the power source 80c.

This allows the voltage between first electrodes 71a and 71b, the voltage between first electrodes 71c and 71d, and the voltage between first electrodes 71d and 71f to be controlled independently of one another. Specifically, power supply 80a outputs a higher voltage than power supply 80b, which in turn outputs a higher voltage than power supply 80c. This allows the electric field strength in the electric field space between first electrodes 71a and 71b, which are closer to the rotation axis Q1, to be higher than the electric field strength in the electric field space between first electrodes 71c and 71d, which are farther from the rotation axis Q1. Furthermore, the electric field strength of the voltage in the electric field space between first electrodes 71c and 71d can be higher than the electric field strength in the electric field space between first electrodes 71e and 71f.

Figure 15 is a plan view schematically illustrating another example of the configuration of the first electrode group 7. In the example of Figure 15, the first electrodes 71a, 71c, and 71e are connected to the first output terminal 81 of the power supply 80, and the first electrodes 71b, 71d, and 71f are connected to the second output terminal 82 of the power supply 80. Here, the magnitudes of the voltages applied between the first electrodes 71 are approximately the same.

In the example of FIG. 15, the spacing between the first electrodes 71 becomes narrower as one approaches the rotation axis Q1. In other words, the spatial density of the first electrodes 71 increases as one approaches the rotation axis Q1. Specifically, the spacing between first electrodes 71a and 71b is narrower than the spacing between first electrodes 71b and 71c, the spacing between first electrodes 71b and 71c is narrower than the spacing between first electrodes 71c and 71d, the spacing between first electrodes 71c and 71d is narrower than the spacing between first electrodes 71d and 71e, and the spacing between first electrodes 71d and 71e is narrower than the spacing between first electrodes 71e and 71f.

This allows an electric field of higher intensity to be applied to the voltage space between first electrodes 71a and 71b, which is closer to the rotation axis Q1. On the other hand, an electric field of lower intensity than the electric field strength in the voltage space between first electrodes 71a and 71b is applied to the voltage space between first electrodes 71b and 71c. Similarly, an electric field of lower intensity than the electric field strength in the electric field space between first electrodes 71b and 71c can be applied to the electric field space between first electrodes 71c and 71d. The same applies below.

<Fourth embodiment>
The substrate processing apparatus 1 according to the fourth embodiment has the same configuration as the substrate processing apparatus 1 according to any one of the first to third embodiments, except for the presence or absence of a second plasma generating unit 500. For example, the second plasma generating unit 500 is connected to the first plasma generating unit 5, and constitutes a nozzle head 3 together with the processing liquid nozzle 4 and the first plasma generating unit 5. Fig. 16 is a diagram schematically showing an example of the configuration of the nozzle head 3 according to the fourth embodiment.

In the example of Figure 16, the second plasma generating unit 500 is provided between the processing liquid nozzle 4 and the first plasma generating unit 5. Like the first plasma generating unit 5, the second plasma generating unit 500 can supply gas that has passed through the electric field space for plasma. The second plasma generating unit 500 supplies the gas toward the processing liquid that has been discharged from the processing liquid nozzle 4 and that lands on the main surface of the substrate W.

Figure 17 is a side cross-sectional view that schematically shows an example of the configuration of the second plasma generating unit 500. In the example of Figure 17, the second plasma generating unit 500 is a so-called pen-shaped plasma source, and includes a second unit main body 600 and a second electrode group 700.

The second unit body 600 is formed from an insulator (dielectric) such as quartz or ceramic, and forms a second gas flow path 610 through which gas flows. In the example of Figure 17, the second unit body 600 includes a tubular body 620 and an inlet portion 630. The tubular body 620 has a tubular shape (e.g., a cylindrical shape). The internal space of the tubular body 620 corresponds to part of the second gas flow path 610, and the lower end opening of the tubular body 620 corresponds to the outlet 610a of the second gas flow path 610.

The second unit body 600 includes a sealing portion 650. The sealing portion 650 is formed from an insulator (dielectric) such as resin (e.g., silicone resin), and seals the upper end opening of the cylindrical body 620.

The inlet section 630 is a component for allowing gas to flow toward the internal space of the cylindrical body 620, and is connected to the side of the cylindrical body 620. The inlet section 630 has, for example, a cylindrical shape, and its downstream opening is formed on the side of the cylindrical body 620. The internal space of the inlet section 630 corresponds to a portion of the upstream side of the first gas flow path 60, and the entire internal space of the cylindrical body 620 and the inlet section 630 corresponds to the first gas flow path 60.

Gas is supplied from the gas supply unit 50 to the upstream port of the inlet 630. The gas supplied to the inlet 630 of the second plasma generation unit 500 is, for example, the same type of gas as the gas supplied to the first plasma generation unit 5. In the example of FIG. 17, the gas supply unit 50 includes a gas supply pipe 510 and a valve 520. The upstream port of the inlet 630 is connected to the downstream end of the gas supply pipe 510. The upstream end of the gas supply pipe 510 is connected to a gas supply source 53. A valve 520 is installed in the gas supply pipe 510. The valve 520 is controlled by the control unit 90, and the supply of gas to the inlet 630 is switched on and off by switching the valve 520 on and off. The valve 520 may be a valve capable of adjusting the gas flow rate, or a separate flow rate adjustment valve may be installed in the gas supply pipe 510.

In this second unit body 600, gas that flows in from the upstream port of the inlet 630 flows through the second gas flow path 610 and flows out from the outlet 610a.

The second electrode group 700 includes a plurality of second electrodes 710. In the example of FIG. 17, two second electrodes 710a and 710b are provided as the plurality of second electrodes 710. The second electrode 710a is formed of a conductor such as metal and has an elongated shape that is long in the longitudinal direction along the central axis Q2 of the cylindrical body 620. For example, the second electrode 710a has a cylindrical shape. A longitudinal portion of the second electrode 710a is located in the internal space of the cylindrical body 620 and faces the inner circumferential surface of the cylindrical body 620 with a gap in the radial direction of the central axis Q2. In other words, a longitudinal portion of the second electrode 710a is loosely inserted within the cylindrical body 620. The second electrode 710a also extends vertically upward beyond the upper end opening of the cylindrical body 620. In other words, the second electrode 710a extends vertically upward, penetrating the sealing portion 650 provided at the upper end opening of the cylindrical body 620.

In the example of Figure 17, the second electrode 710a is covered by a dielectric protective member 720. The dielectric protective member 720 is formed of an insulator (dielectric) such as quartz or ceramics, and covers the surface of the second electrode 710a. Specifically, the dielectric protective member 720 covers the surface of the second electrode 710a at least within the cylindrical body 620. For example, the dielectric protective member 720 is in close contact with the surface of the second electrode 710a. The dielectric protective member 720 may be a dielectric film formed on the surface of the second electrode 710a. This dielectric protective member 720 can protect the second electrode 710a from plasma.

The second electrode 710b is also formed from a conductor such as metal, and is arranged to face the second electrode 710a in the radial direction of the central axis Q2. The second electrode 710b faces a portion of the second electrode 710a near the tip end. The second electrode 710b has, for example, a cylindrical shape and surrounds that portion of the second electrode 710a. In the example of Figure 17, the second electrode 710b is located outside the cylindrical body 620. The central axis of the second electrode 710b approximately coincides with the central axis Q2 of the cylindrical body 620.

The second electrode 710a is connected to the first output terminal 81 of the power supply 80, and the second electrode 710b is connected to the second output terminal 82 of the power supply 80. The power supply 80 outputs a voltage (e.g., a high-frequency voltage) between the second electrodes 710a and 710b. This applies an electric field to the voltage space between the second electrodes 710a and 710b. Note that the second electrodes 710a and 710b may be connected to a power supply separate from the power supply 80. In other words, the second electrode group 700 of the second plasma generating unit 500 may be connected to a power supply separate from the power supply 80 connected to the first electrode group 7 of the first plasma generating unit 5.

By applying a voltage between the second electrodes 710a, 710b, an electric field can be applied to the electric field space between the second electrodes 710a, 710b. This electric field space is formed in part of the first gas flow path 60, so the gas flowing through the first gas flow path 60 passes through this electric field space. As the gas passes through this electric field space, an electric field acts on the gas, ionizing part of the gas and generating plasma. When this plasma is generated, activated species are generated, which move along the gas flow and flow out the outlet 610a of the second gas flow path 610.

The activated species flowing out from the outlet 610a of the second plasma generating unit 500 are supplied to the processing liquid that has been discharged from the processing liquid nozzle 4 but has not yet landed on the main surface of the substrate W (see Figure 16). Conversely, the second plasma generating unit 500 is positioned so that it can supply gas (including activated species) to the processing liquid before it reaches the main surface of the substrate W. In the example of Figure 16, the second plasma generating unit 500 is disposed between the processing liquid nozzle 4 and the first plasma generating unit 5 and discharges gas vertically downward. The processing liquid nozzle 4 discharges the processing liquid at an angle inclined toward the first plasma generating unit 5, so the processing liquid lands on the main surface of the substrate W after passing directly below the second plasma generating unit 500. In this way, as the processing liquid passes directly below the second plasma generating unit 500, the activated species from the second plasma generating unit 500 act on the processing liquid. This improves the processing ability of the processing liquid even before it reaches the main surface of the substrate W. As a more specific example, active species such as oxygen radicals can react with sulfuric acid before it is applied to the substrate W to produce Caro's acid. This allows the resist in the center of the substrate W to be more appropriately removed.

As illustrated in Figure 16, the second plasma generating unit 500 may be integrally connected to the first plasma generating unit 5. In the example of Figure 16, a connecting member 550 connects the second plasma generating unit 500 and the first plasma generating unit 5. This allows the head moving mechanism 30 to move the first plasma generating unit 5 and the second plasma generating unit 500 together.

In the example shown in Figure 17, the second electrode 710b is located outside the cylindrical body 620, but it may also be located inside the cylindrical body 620. In this case, it is recommended that a dielectric protective member be provided to cover the second electrode 710b.

Figure 18 is a diagram schematically illustrating an example of the configuration of a portion of a substrate processing apparatus 1 according to the fourth embodiment. In the example of Figure 18, the second plasma generation unit 500 is not connected to the first plasma generation unit 5. In the example of Figure 18, the second plasma generation unit 500 is provided so as to be movable by a head movement mechanism 300 separate from the head movement mechanism 30. The specific configuration of the head movement mechanism 300 is similar to that of the head movement mechanism 30, for example.

The head moving mechanism 300 can move the second plasma generating unit 500 back and forth between a processing position and a standby position. The standby position is a position where the second plasma generating unit 500 does not interfere with the transport path of the substrate W when the substrate W is being loaded or unloaded, and is, for example, a position radially outward from the substrate holder 2. The processing position is a position where the second plasma generating unit 500 supplies gas to the processing liquid from the outlet 4a of the processing liquid nozzle 4 to the main surface of the substrate W.

Figure 18 shows the nozzle head 3 and second plasma generating unit 500 positioned at their respective processing positions. In the example of Figure 18, the second plasma generating unit 500 is installed to avoid the area between the processing liquid nozzle 4 and the first plasma generating unit 5. As a more specific example, it is installed on the opposite side of the processing liquid nozzle 4 from the first plasma generating unit 5.

Fifth Embodiment
19 is a diagram schematically illustrating an example of the configuration of the substrate processing apparatus 1 according to the fifth embodiment. The substrate processing apparatus 1 according to the fifth embodiment has the same configuration as the substrate processing apparatus 1 according to any one of the first to fourth embodiments, except for the presence or absence of a blocking plate 800.

The shielding plate 800 is positioned vertically above the substrate W held by the substrate holder 2. The shielding plate 800 is a member for preventing the atmosphere above the substrate W held by the substrate holder 2 from diffusing to the surrounding area. The shielding plate 800 has a plate-like shape and is positioned so that its thickness direction is aligned with the vertical direction. In a plan view, the shielding plate 800 has a circular shape centered on the rotation axis Q1, and its diameter is larger than the diameter of the substrate W.

In the example of Figure 19, the shielding plate 800 includes a plate portion 810 and a hanging portion 820. The plate portion 810 has a circular plate shape centered on the rotation axis Q1, and is positioned such that its thickness direction is along the vertical direction. The hanging portion 820 has a cylindrical shape that protrudes vertically downward from the periphery of the plate portion 810. In a plan view, the tip of the hanging portion 820 is located between the substrate W held by the substrate holder 2 and the cup 8, and is located below the underside of the substrate W in the vertical direction.

The shielded space between the shield plate 800 and the substrate W accommodates the nozzle head 3 stopped at the processing position. The various pipes extending from the nozzle head 3 (processing liquid supply pipe 41 and gas supply pipe 51) pass through slits (not shown) provided in the hanging portion 820 of the shield plate 800, extending from the shielded space to the external space. The slits extend vertically while radially penetrating the hanging portion 820, and open vertically downward.

The shielding plate 800 is movable up and down by a lifting mechanism 850. The lifting mechanism 850 has a mechanism such as a ball screw mechanism or an air cylinder. The lifting mechanism 850 is controlled by the control unit 90 and moves the shielding plate 800 back and forth between a blocking position and a standby position. The blocking position is a position close to the substrate W held by the substrate holder 2, and as a specific example, a position where the tip of the hanging portion 820 is below the substrate W. Figure 19 shows the shielding plate 800 stopped in the blocking position. The standby position is a position vertically above the blocking position where the shielding plate 800 does not interfere with either the transport path of the substrate W or the movement path of the nozzle head 3.

With the lifting mechanism 850 raising the shielding plate 800 to the standby position and the head moving mechanism 30 moving the nozzle head 3 to the standby position, the main transport robot 120 can load and unload the substrate W into and from the substrate processing apparatus 1. With the substrate holder 2 holding the substrate W, the head moving mechanism 30 moves the nozzle head 3 to the processing position, and the lifting mechanism 850 lowers the shielding plate 800 to the blocking position, thereby preparing for processing by the nozzle head 3.

In this state, the substrate holder 2 rotates the substrate W, and the nozzle head 3 supplies processing liquid and gas to the main surface of the substrate W, thereby processing the substrate W.

In this process, the shielding plate 800 is in the shielding position, which prevents the atmosphere between the shielding plate 800 and the substrate W from diffusing to the surrounding area. It also prevents air from entering the atmosphere between the shielding plate 800 and the substrate W from the outside, which could reduce the gas concentration in the atmosphere.

Figure 20 is a diagram schematically illustrating another example of the configuration of the substrate processing apparatus 1 according to the fifth embodiment. In the example of Figure 20, the nozzle head 3 consisting of the processing liquid nozzle 4 and the first plasma generation unit 5 also functions as a blocking plate. Hereinafter, the nozzle head 3, processing liquid nozzle 4, and first plasma generation unit 5 in Figure 20 will also be referred to as the nozzle head 3A, processing liquid nozzle 4A, and first plasma generation unit 5A, respectively.

In the example of Figure 20, the processing liquid nozzle 4A extends vertically and faces the center of the substrate W in the vertical direction. The processing liquid nozzle 4A has a discharge port 4a at its lower end surface, and discharges the processing liquid from the discharge port 4a in the vertical direction. The processing liquid discharged from the discharge port 4a flows vertically downward and lands on the center of the main surface of the substrate W.

The first plasma generating unit 5A is located adjacent to the processing liquid nozzle 4A in plan view. However, the first plasma generating unit 5A is located so as to surround the processing liquid nozzle 4A, and its outer edge in plan view has, for example, a circular shape centered on the rotation axis Q1. The outer diameter of the lower end of the first plasma generating unit 5 is, for example, equal to or greater than the diameter of the substrate W.

20, the first unit body 6 of the first plasma generating unit 5A includes an upper surface portion 605 and a side wall portion 606. In a plan view, the upper surface portion 605 has a circular shape centered on the rotation axis Q1, and a through-hole 605a is formed in the center thereof, through which the processing liquid nozzle 4 is disposed. The processing liquid nozzle 4 is fixed to the first unit body 6 by being disposed so as to pass through the through-hole 605a. The side wall portion 606 has a cylindrical shape extending vertically downward from the periphery of the upper surface portion 605. The space surrounded by the upper surface portion 605 and the side wall portion 606 corresponds to the first gas flow path 60.

20, the first unit body 6 is also provided with a flow path divider 63 that divides the first gas flow path 60 into multiple gas division flow paths 61. In the example of FIG. 20, gas division flow paths 61a and 61b are formed as the multiple gas division flow paths 61. Therefore, in the example of FIG. 20, one flow path divider 63 is provided that divides the gas division flow paths 61a and 61b. Here, the flow path divider 63 has a cylindrical shape centered on the rotation axis Q1. The inner diameter of the flow path divider 63 is larger than the outer diameter of the processing liquid nozzle 4, and the space between the flow path divider 63 and the processing liquid nozzle 4 becomes the gas division flow path 61a. The outer diameter of the flow path divider 63 is smaller than the inner diameter of the side wall portion 606, and the space between the flow path divider 63 and the side wall portion 606 becomes the gas division flow path 61b. Therefore, the gas division flow path 61a is formed near the rotation axis Q1, and the gas division flow path 61b is formed farther from the rotation axis Q1 than the gas division flow path 61a. In other words, the distance between the gas division flow passage 61a and the rotation axis Q1 is shorter than the distance between the gas division flow passage 61b and the rotation axis Q1.

The outer diameter of the radially outermost gas dividing flow passage 61b may be equal to or greater than the diameter of the substrate W. In other words, the outer diameter of the first gas flow passage 60 may be equal to or greater than the diameter of the substrate W.

A gas supply flow path 62 is formed in the upper surface portion 605 to supply gas to the gas division flow paths 61. In the example of FIG. 20, the upstream port 621 of the gas supply flow path 62 is formed on the upper surface of the upper surface portion 605, and the downstream port 622 of the gas supply flow path 62 is formed on the lower surface of the upper surface portion 605 (i.e., the upper surface of the gas division flow path 61). Here, gas supply flow paths 62a and 62b are formed corresponding to the gas division flow paths 61a and 61b. Gas supply flow path 62a is a flow path for supplying gas to the gas division flow path 61a, and gas supply flow path 62b is a flow path for supplying gas to the gas division flow path 61b.

Here, multiple (two in the figure) gas supply flow paths 62a are arranged, for example, at equal intervals, circumferentially about the rotation axis Q1. This allows gas to be supplied to the gas division flow paths 61a from multiple circumferential positions, thereby enabling more uniform supply of gas to the gas division flow paths 61a. Also here, multiple (two in the figure) gas supply flow paths 62b are arranged, for example, at equal intervals, circumferentially about the rotation axis Q1. This allows gas to be supplied to the gas division flow paths 61b from multiple circumferential positions, thereby enabling more uniform supply of gas to the gas division flow paths 61b.

The gas supply unit 50 supplies gas to the upstream port 621 of the gas supply flow path 62. Here, gas supply pipes 51a and 51b are provided corresponding to the gas supply flow paths 62a and 62b. In the example of FIG. 20, the gas supply pipe 51a includes branch pipes and a common pipe. One end of each branch pipe is connected to the upstream port 621a of the gas supply flow path 62a, and the other end of the branch pipe is connected to one end of the common pipe, which is connected to the gas supply source 53. A valve 52a is provided in the common pipe of the gas supply pipe 51a. The valve 52a is controlled by the control unit 90. The valve 52a may be a flow rate adjustment valve that can adjust the flow rate of gas flowing inside the gas supply pipe 51a. Alternatively, a flow rate adjustment valve separate from the valve 52a may be provided in the common pipe.

The gas supply pipe 51b also includes branch pipes and a common pipe, with one end of each branch pipe connected to the upstream port 621b of the gas supply flow path 62b, the other end of the branch pipe connected to one end of the common pipe, and the other end of the common pipe connected to the gas supply source 53. A valve 52b is provided in the common pipe of the gas supply pipe 51b. The valve 52b is controlled by the control unit 90. The valve 52b may be a flow rate adjustment valve that can adjust the flow rate of gas flowing inside the gas supply pipe 51b. Alternatively, a flow rate adjustment valve separate from the valve 52b may be provided in the common pipe.

This gas supply unit 50 can individually adjust the gas flow rates in the gas division flow paths 61a and 61b. That is, the gas flow rate in the gas division flow path 61a, which is closer to the rotation axis Q1, can be adjusted independently of the gas flow rate in the gas division flow path 61b, which is farther from the rotation axis Q1. For example, the flow rates can be adjusted so that the gas flow velocity in the gas division flow path 61a is higher than the gas flow velocity in the gas division flow path 61b.

In the example described above, valve 52a (flow rate adjustment valve) is installed in the common pipe of gas supply pipe 51a to collectively adjust the gas flow rate for multiple gas supply flow paths 62a, but it may also be installed individually in branch pipes of gas supply pipe 51a. In this case, the gas flow rate in multiple gas supply flow paths 62a can be adjusted individually, allowing gas to be supplied more uniformly to gas division flow paths 61a. The same applies to valve 52b (flow rate adjustment valve).

20, the first unit body 6 also includes a first plate-like body 64. The first plate-like body 64 is located downstream of the gas division flow paths 61a and 61b and upstream of the first electrode group 7. In a plan view, the first plate-like body 64 has a circular shape centered on the rotation axis Q1, and a through-hole 642 is formed in the center thereof, through which the processing liquid nozzle 4 passes. The outer peripheral surface of the first plate-like body 64 is connected to the inner peripheral surface of the side wall portion 606, and the lower end of the flow path divider 63 is connected to the upper surface of the first plate-like body 64. A region of the first plate-like body 64 radially inward from the flow path divider 63 faces the gas division flow path 61a in the vertical direction, and a region radially outward from the flow path divider 63 faces the gas division flow path 61b in the vertical direction.

The first plate-shaped body 64 has multiple openings 641 formed in it, and the gas flowing through the gas dividing channels 61a and 61b passes through the openings 641 in the first plate-shaped body 64 and flows toward the first electrode group 7. This allows the gas to be supplied to the first electrode group 7 more uniformly.

Figure 21 is a plan view schematically illustrating an example of the configuration of the first electrode group 7 (referred to as first electrode group 7A) according to the fifth embodiment. In the example of Figure 21, the first electrode group 7A also includes multiple first electrodes 71, which are arranged side by side at intervals in a plan view. Furthermore, each first electrode 71 has an elongated shape that is long in the horizontal longitudinal direction, and is arranged side by side in the short direction.

Figure 21 also shows the frame 74. The frame 74 has a circular ring shape centered on the rotation axis Q1, and is connected to the lower end of the side wall portion 606 of the first unit main body 6. The inner diameter of the frame 74 may be equal to or greater than the diameter of the substrate W.

Potentials of alternate polarities are applied to the multiple first electrodes 71. In the example of FIG. 21, connecting portions 711a and 711b are provided on opposite sides of the processing liquid nozzle 4 in the longitudinal direction of the first electrode 71. The connecting portions 711a and 711b have an arc-shaped plate shape centered on the rotation axis Q1. In the example of FIG. 21, the connecting portions 711a and 711b are provided radially outward from the frame body 74.

In the example of Figure 21, connecting portions 711c and 711d are provided radially inward of connecting portions 711a and 711b, on opposite sides of the processing liquid nozzle 4. Connecting portions 711c and 711d also have an arc-shaped plate shape centered on the rotation axis Q1. Connecting portions 711a, 711c, 711d, and 711b are arranged in this order from one side to the other in the longitudinal direction of the first electrode 71 (from left to right in Figure 21).

The ends of the odd-numbered first electrodes 71 are connected to each other by connecting portions 711a. That is, these first electrodes 71 extend from connecting portion 711a in the longitudinal direction toward connecting portion 711b. Additionally, multiple first electrodes 71 (two in Figure 21) also extend from connecting portion 711d in the longitudinal direction toward connecting portion 711b. Each first electrode 71 connected to connecting portion 711d is aligned in a straight line with the corresponding first electrode 71 connected to connecting portion 711a.

The ends of the even-numbered first electrodes 71 are connected to each other by connecting portions 711b. That is, these first electrodes 71 extend from connecting portion 711b in the longitudinal direction toward connecting portion 711a. Additionally, multiple first electrodes 71 (two in Figure 21) also extend from connecting portion 711c in the longitudinal direction toward connecting portion 711a. Each first electrode 71 connected to connecting portion 711c is aligned in a straight line with the corresponding first electrode 71 connected to connecting portion 711b.

The connecting portions 711a and 711d are connected to the first output terminal 81 of the power supply 80, and the connecting portions 711b and 711c are connected to the second output terminal 82 of the power supply 80. As a result, potentials of different polarities are applied to adjacent first electrodes 71 in the arrangement direction.

In the example of Figure 21, although not shown, a dielectric protective member 72 may be provided to protect the first electrodes 71, and a dielectric partition member 73 may be provided between the first electrodes 71. If gas comes into contact with the connecting portions 711c and 711d, these may also be covered with a dielectric protective member.

Gas from the gas dividing channels 61a, 61b passes between the multiple first electrodes 71 inside the frame 74 and is supplied to the main surface of the substrate W. As the gas passes through the electric field space between the multiple first electrodes 71 formed by the first electrode group 7, part of the gas ionizes, generating plasma. When this plasma is generated, various active species are produced, and these active species are supplied to the main surface of the substrate W along the gas flow.

The first gas flow path 60 (gas dividing flow paths 61a, 61b) of the first plasma generating unit 5A is formed to surround the periphery of the processing liquid nozzle 4, and the first electrode group 7 is provided to surround the periphery of the processing liquid nozzle 4. This allows active species to be supplied to the main surface of the substrate W over the entire circumferential direction. In the above example, the outer diameter of the portion of the first gas flow path 60 of the first plasma generating unit 5A immediately before the first electrode group 7 is equal to or greater than the diameter of the substrate W, the overall diameter of the electric field space around the first electrode group 7 is also equal to or greater than the diameter of the substrate W, and the inner diameter of the frame 74 is also equal to or greater than the diameter of the substrate W. This first plasma generating unit 5A can supply active species to almost the entire surface of the substrate W except for the central portion. This improves the processing capacity of the processing liquid over a wider area and shortens the processing time for the substrate W.

Furthermore, because the nozzle head 3A faces the entire main surface of the substrate W in the vertical direction, the nozzle head 3A can function as a shielding plate. This prevents the atmosphere between the substrate W and the nozzle head 3 from diffusing into the space vertically above the nozzle head 3A, for example.

Figure 22 is a plan view schematically illustrating another example of the configuration of the first electrode group 7 according to the fifth embodiment. In the example shown in Figure 22, multiple first electrode groups 7 are arranged at intervals in the circumferential direction. Here, eight first electrode groups 7a to 7h are arranged at equal intervals in the circumferential direction.

In each first electrode group 7, the multiple first electrodes 71 are arranged with their longitudinal directions aligned along the radial direction and spaced apart from one another in the lateral direction. In the example of FIG. 22, the multiple first electrodes 71 have approximately equal lengths. In each first electrode group 7, the odd-numbered first electrodes 71 from one side of the arrangement direction have their longitudinal ends connected to one another by a connecting portion 711a, and the even-numbered first electrodes 71 have their longitudinal ends connected to one another by a connecting portion 711b. The connecting portion 711b is located adjacent to the processing liquid nozzle 4, and the connecting portion 711a is located radially outward of the connecting portion 711b; in the example of FIG. 22, the connecting portion 711b is located radially outward of the frame 74. The connecting portion 711a is connected to the first output terminal 81 of the power source 80, and the connecting portion 711b is connected to the second output terminal 82 of the power source 80.

Each first electrode group 7 may be connected to a different power source 80. This allows the electric field strength in the electric field space around each first electrode group 7 to be individually adjusted.

As mentioned above, the substrate processing apparatus 1 has been described in detail, but the above description is merely an example in all respects, and the substrate processing apparatus 1 is not limited to this. It is understood that countless variations not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and variations can be combined or omitted as appropriate, as long as they are not mutually inconsistent.

For example, at least one of the flow path divider 63, first plate 64, second plate 66, and dielectric partition member 73 may not be provided. If flow path dividers 63 are provided, the number thereof may be one or more. The first electrodes 71 do not necessarily have to be provided on the same plane, and the vertical positions of the first electrodes 71 may differ from each other.

Furthermore, the processing performed on the substrate W is not necessarily limited to resist removal processing. For example, it can be applied to any processing in which the processing capacity of the processing liquid can be improved by active species. In other words, the type of gas supplied to the first plasma generating unit 5 and the second plasma generating unit 500 is selected according to the processing liquid so that the active species can improve the processing capacity of the processing liquid.

REFERENCE SIGNS LIST 1 substrate processing apparatus 2 substrate holder 4 processing liquid nozzle 5 first plasma generating unit 50 gas supply unit 500 second plasma generating unit 6 first unit body 60 first gas flow path 600 second unit body 61, 61a to 61c gas division flow path 610 second gas flow path 62, 62a to 62c gas supply flow path 622, 622a to 622c downstream port 64 first plate-like body 641 first opening, second opening (opening)
65: shutter; 66: second plate-shaped body; 661: first outlet, second outlet (outlet)
7, 7a to 7h, 7A First electrode group 700 Second electrode group 71, 71a to 71f First electrode 710, 710a, 710b Second electrode 73 Dielectric partition member Q1 Rotation axis W Substrate

Claims (21)

A substrate processing apparatus,
a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided at a position adjacent to the processing liquid nozzle in a horizontal direction without overlapping the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
the first plasma generating unit has a width equal to or greater than the radius of the substrate;
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, and the gas that has passed through the first electrode group is supplied to a region of the main surface of the substrate held by the substrate holder, the region extending from the center to the peripheral edge of the substrate, and extending over a radius of the substrate or greater;
the processing liquid nozzle ejects the processing liquid toward a center portion of the substrate;
the first unit body includes a flow path partition portion that partitions the first gas flow path into a plurality of gas division flow paths in a plan view,
the substrate processing apparatus includes a gas supply unit that supplies the gas to the first gas flow path;
the processing liquid nozzle ejects the processing liquid toward a center portion of the main surface of the substrate;
the plurality of gas division channels include a first gas division channel and a second gas division channel;
a distance between the first gas division channel and the rotation axis is shorter than a distance between the second gas division channel and the rotation axis;
The gas supply unit supplies the gas to the first gas divided flow path and the second gas divided flow path so that a first flow velocity of the gas in the first gas divided flow path is higher than a second flow velocity of the gas in the second gas divided flow path . a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided adjacent to the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
The first plasma generating unit is
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, and the gas that has passed through the first electrode group is supplied to the main surface of the substrate held by the substrate holding part;
the first plasma generating unit further includes a plurality of dielectric protection members covering the plurality of first electrodes, respectively, and a dielectric partition member provided between the plurality of first electrodes and the plurality of dielectric protection members. 3. The substrate processing apparatus according to claim 2,
The first plasma generating unit supplies the gas to a region of the substrate that is equal to or greater than the radius of the substrate and that includes the center and peripheral edges of the substrate. 4. The substrate processing apparatus according to claim 2 , wherein:
the first unit body includes a flow path partition portion that partitions the first gas flow path into a plurality of gas divided flow paths in a plan view. 5. The substrate processing apparatus according to claim 4,
a gas supply unit that supplies the gas to the first gas flow path;
the processing liquid nozzle ejects the processing liquid toward a center portion of the main surface of the substrate;
the plurality of gas division channels include a first gas division channel and a second gas division channel;
a distance between the first gas division channel and the rotation axis is shorter than a distance between the second gas division channel and the rotation axis;
The gas supply unit supplies the gas to the first gas divided flow path and the second gas divided flow path so that a first flow velocity of the gas in the first gas divided flow path is higher than a second flow velocity of the gas in the second gas divided flow path. 6. The substrate processing apparatus according to claim 1, claim 4 or claim 5,
a plurality of gas supply flow paths formed in the first unit body for supplying gas to one of the plurality of gas division flow paths, and downstream ports of the plurality of gas supply flow paths connected to the one of the plurality of gas division flow paths at positions different from each other in a plan view. 7. The substrate processing apparatus according to claim 1,
the first unit body further includes a first plate-like body provided upstream of the first electrode group in the first gas flow path and having a plurality of openings facing the first electrode group. a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided adjacent to the processing liquid nozzle in a horizontal direction without overlapping the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
the first plasma generating unit has a width equal to or greater than the radius of the substrate;
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for allowing gas to flow from vertically above toward the first electrode group;
the gas that has passed through the first electrode group is supplied to a region of the main surface of the substrate held by the substrate holder that is equal to or greater than a radius of the substrate, the region including the center to a peripheral edge of the substrate;
the processing liquid nozzle ejects the processing liquid toward a center portion of the substrate;
the first unit body further includes a first plate-like body that is provided upstream of the first electrode group in the first gas flow path and has a plurality of openings facing the first electrode group,
the processing liquid nozzle ejects the processing liquid toward a center portion of the main surface of the substrate;
the plurality of openings include a first opening and a second opening;
a distance between the first opening and the rotation axis is shorter than a distance between the second opening and the rotation axis;
The substrate processing apparatus, wherein the area of the first opening is smaller than the area of the second opening. 9. The substrate processing apparatus according to claim 1,
the first unit body further includes a shutter configured to open and close an outlet of the first gas flow passage provided downstream of the first electrode group. The substrate processing apparatus according to claim 9,
the first unit body further includes a second plate-like body having a plurality of outlets as outlets of the first gas flow path. a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided at a position adjacent to the processing liquid nozzle in a horizontal direction without overlapping the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
the first plasma generating unit has a width equal to or greater than the radius of the substrate;
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for allowing gas to flow from vertically above toward the first electrode group;
the gas that has passed through the first electrode group is supplied to a region of the main surface of the substrate held by the substrate holder that is equal to or greater than a radius of the substrate, the region including the center to a peripheral edge of the substrate;
the processing liquid nozzle ejects the processing liquid toward a center portion of the substrate;
the first unit body further includes a second plate-like body having a plurality of outlets as outlets of the first gas flow path,
the processing liquid nozzle ejects the processing liquid toward a center portion of the main surface of the substrate;
the plurality of outlets include a first outlet and a second outlet,
a distance between the first outlet and the rotation axis is shorter than a distance between the second outlet and the rotation axis;
The substrate processing apparatus, wherein an area of the first outlet is smaller than an area of the second outlet. 12. The substrate processing apparatus according to claim 1,
the processing liquid nozzle ejects the processing liquid toward a center portion of the main surface of the substrate;
a distance between a first electric field space among the electric field spaces between the plurality of electrodes and the rotation axis is shorter than a distance between a second electric field space among the electric field spaces and the rotation axis;
In the substrate processing apparatus, an electric field having a higher field strength than an electric field applied to the second electric field space is applied to the first electric field space. The substrate processing apparatus according to claim 12,
A substrate processing apparatus, wherein the magnitude of the voltage applied between two of the plurality of electrodes that form the first electric field space is greater than the magnitude of the voltage applied between two of the plurality of electrodes that form the second electric field space. 14. The substrate processing apparatus according to claim 12,
The substrate processing apparatus, wherein the distance between two of the plurality of electrodes that form the first electric field space is narrower than the distance between two of the plurality of electrodes that form the second electric field space. 15. The substrate processing apparatus according to claim 1,
Further comprising a second plasma generating unit;
The second plasma generating unit is
a second electrode group having a plurality of second electrodes;
and a second unit body that forms a second gas flow path for flowing a gas toward the second electrode group, and supplies the gas that has passed through the second electrode group to the processing liquid from the processing liquid nozzle until it lands on the main surface of the substrate. 16. The substrate processing apparatus according to claim 1,
the first plasma generating unit surrounds the processing liquid nozzle in a plan view, and forms a blocking plate together with the processing liquid nozzle;
The substrate processing apparatus, wherein the blocking plate is provided vertically above an upper surface of the substrate held by the substrate holding part and faces the upper surface of the substrate in the vertical direction. 17. The substrate processing apparatus according to claim 1,
The first electrode group is provided in plurality,
The substrate processing apparatus, wherein the plurality of first electrode groups are arranged side by side in a circumferential direction of the rotation axis. a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided adjacent to the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
The first plasma generating unit is
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, and the gas that has passed through the first electrode group is supplied to the main surface of the substrate held by the substrate holding part;
the processing liquid nozzle ejects the processing liquid toward a center portion of the main surface of the substrate;
a distance between a first electric field space among the electric field spaces between the plurality of electrodes and the rotation axis is shorter than a distance between a second electric field space among the electric field spaces and the rotation axis;
In the substrate processing apparatus, an electric field having a higher field strength than an electric field applied to the second electric field space is applied to the first electric field space. a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided adjacent to the processing liquid nozzle in a plan view along the rotation axis;
a second plasma generating unit;
Equipped with
The first plasma generating unit is
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, and the gas that has passed through the first electrode group is supplied to the main surface of the substrate held by the substrate holding part;
The second plasma generating unit is
a second electrode group having a plurality of second electrodes;
and a second unit body that forms a second gas flow path for flowing a gas toward the second electrode group, and supplies the gas that has passed through the second electrode group to the processing liquid from the processing liquid nozzle until it lands on the main surface of the substrate. a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided adjacent to the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
The first plasma generating unit is
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, and the gas that has passed through the first electrode group is supplied to the main surface of the substrate held by the substrate holding part;
the first plasma generating unit surrounds the processing liquid nozzle in a plan view, and forms a blocking plate together with the processing liquid nozzle;
The substrate processing apparatus, wherein the blocking plate is provided vertically above an upper surface of the substrate held by the substrate holding part and faces the upper surface of the substrate in the vertical direction. a substrate holder that holds a substrate and rotates the substrate around a rotation axis that passes through a center of the substrate;
a processing liquid nozzle that ejects a processing liquid toward a main surface of the substrate held by the substrate holding unit;
a first plasma generating unit provided adjacent to the processing liquid nozzle in a plan view along the rotation axis;
Equipped with
The first plasma generating unit is
a first electrode group including a plurality of first electrodes arranged side by side at intervals in a plan view;
a first unit body that forms a first gas flow path for flowing a gas from vertically above toward the first electrode group, and the gas that has passed through the first electrode group is supplied to the main surface of the substrate held by the substrate holding part;
The first electrode group is provided in plurality,
The substrate processing apparatus, wherein the plurality of first electrode groups are arranged side by side in a circumferential direction of the rotation axis.