JP7728103B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

In the manufacturing process of semiconductor devices and other devices, liquid processing is often performed by supplying processing liquids to substrates such as semiconductor wafers. Examples of such processes include cleaning substrates with cleaning liquids, plating substrates with plating liquids, and etching substrates with etching liquids.

JP 2014-99528 A

This disclosure provides technology that can reduce temperature variations in liquid processing between multiple liquid processing modules.

A substrate processing apparatus according to one aspect of the present disclosure includes a plurality of liquid processing modules . The liquid processing modules are arranged side by side in at least one of a horizontal direction and a vertical direction, and supply a processing liquid to a substrate to perform liquid processing . Each liquid processing module includes a liquid processing unit, a heat source region , and a fan . The liquid processing unit performs liquid processing on the substrate. The heat source region includes a heat source below the liquid processing unit . The fan cools the heat source region .

This disclosure makes it possible to reduce temperature variations in liquid treatment between multiple liquid treatment modules.

FIG. 1 is a schematic perspective view showing the external configuration of a liquid processing apparatus according to an embodiment. FIG. 2 is a schematic cross-sectional plan view of the liquid processing apparatus according to the embodiment. FIG. 3 is a schematic vertical cross-sectional view of the liquid processing apparatus according to the embodiment. FIG. 4 is a schematic cross-sectional view of the liquid processing module according to the embodiment. FIG. 5 is a schematic cross-sectional side view showing the configuration of the liquid processing unit according to the embodiment. FIG. 6 is a diagram for explaining the temperature control process of a plurality of liquid processing modules according to the embodiment. FIG. 7 is a diagram for explaining the temperature control process of a plurality of liquid processing modules according to the embodiment. FIG. 8 is a diagram for explaining the temperature control process of a plurality of liquid treatment modules according to the embodiment. FIG. 9 is a diagram for explaining another temperature control process for a plurality of liquid processing modules according to the embodiment. FIG. 10 is a diagram for explaining another temperature control process for a plurality of liquid processing modules according to the embodiment. FIG. 11 is a diagram illustrating yet another temperature control process for a plurality of liquid processing modules according to the embodiment. FIG. 12 is a diagram illustrating yet another temperature control process for a plurality of liquid processing modules according to the embodiment. FIG. 13 is a diagram for explaining the exhaust process of a plurality of liquid processing modules according to the embodiment. FIG. 14 is a flowchart showing the procedure of the temperature control process executed by the liquid processing apparatus according to the embodiment.

Embodiments of the substrate processing apparatus and substrate processing method disclosed herein will be described in detail below with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments described below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from reality. Furthermore, the drawings may include portions with different dimensional relationships and ratios.

In the manufacturing process of semiconductor devices and other devices, liquid processing is often performed by supplying processing liquids to substrates such as semiconductor wafers. Examples of such processes include cleaning substrates with cleaning liquids, plating substrates with plating liquids, and etching substrates with etching liquids.

In addition, to perform this type of liquid processing efficiently, multiple liquid processing modules are provided in one liquid processing device.

However, with the above-mentioned conventional technology, if a piping line for a processing liquid used at room temperature is located near a piping line for a processing liquid used at high temperatures, there is a risk that the temperature of the room-temperature processing liquid will rise due to heat radiation from the piping line for the processing liquid used at high temperatures.

Furthermore, the waiting time before starting liquid processing of the next substrate is not necessarily constant among multiple liquid processing modules, and as this waiting time becomes longer, the temperature of the processing liquid, which is at room temperature, may rise further. In other words, with conventional technology, there was a risk of temperature variations in liquid processing due to non-uniform waiting times among multiple liquid processing modules.

Therefore, there is a need to develop technology that can overcome the above-mentioned problems and reduce temperature variations in liquid processing between multiple liquid processing modules.

<Configuration of liquid treatment device>
First, the schematic configuration of a liquid processing apparatus 1 according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic perspective view showing the external configuration of the liquid processing apparatus 1 according to an embodiment, and Figure 2 is a schematic cross-sectional plan view of the liquid processing apparatus 1 according to an embodiment. The liquid processing apparatus 1 is an example of a substrate processing apparatus.

In the following, to clarify the positional relationships, mutually perpendicular X-axis, Y-axis, and Z-axis are defined, with the positive Z-axis direction being the vertically upward direction. Also, in the following, the negative X-axis side is defined as the front of the liquid treatment device, and the positive X-axis side is defined as the rear of the liquid treatment device.

As shown in FIG. 1, the liquid processing apparatus 1 according to this embodiment includes a loading station 3, a loading/unloading station 4, a delivery station 5, and a liquid processing station 6. These are arranged adjacently from the front to the rear of the liquid processing apparatus 1 in the order of loading station 3, loading/unloading station 4, delivery station 5, and liquid processing station 6.

The loading station 3 is where carriers C, which store multiple wafers W (e.g., 25 wafers) in a horizontal position, are placed. For example, four carriers C are placed side by side and pressed tightly against the front wall of the loading/unloading station 4.

As shown in FIG. 2, the loading/unloading station 4 is located behind the loading station 3 (on the positive X-axis side) and includes a substrate transfer device 41. In this loading/unloading station 4, the substrate transfer device 41 transfers wafers W between the carrier C placed in the loading station 3 and the delivery station 5.

The transfer station 5 is located behind the loading/unloading station 4 and is equipped with a transfer table 51. In this transfer station 5, wafers W are transferred via the transfer table 51 between the substrate transfer device 41 of the loading/unloading station 4 and the substrate transfer device 61 of the liquid processing station 6, which will be described later.

The liquid processing station 6 is located behind the delivery station 5. A substrate transport device 61 is located in the center of the liquid processing station 6 in the Y-axis direction, and multiple liquid processing units 2 (here, five on each side) are arranged in a line in the front-to-back direction on each side of the substrate transport device 61.

In the liquid processing station 6, the substrate transfer device 61 transfers the wafer W between the transfer table 51 of the transfer station 5 and each liquid processing unit 2, and each liquid processing unit 2 performs liquid processing on the wafer W.

The liquid processing unit 2 is an apparatus that performs a predetermined liquid processing on the wafer W by supplying a processing liquid to the wafer W. Here, an example is described in which the liquid processing unit 2 is a substrate cleaning apparatus that cleans the wafer W, but the liquid processing unit is not limited to a substrate cleaning apparatus.

The liquid processing apparatus 1 also includes a control unit 9. The control unit 9 is a device that controls the operation of the liquid processing apparatus 1. The control unit 9 is, for example, a computer, and includes a memory unit (not shown). The memory unit stores programs that control various processes, such as liquid processing. The control unit 9 controls the operation of the liquid processing apparatus 1 by reading and executing the programs stored in the memory unit.

The program may be recorded on a computer-readable recording medium and installed from that recording medium into the memory unit of the control unit 9. Examples of computer-readable recording media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

In the liquid processing apparatus 1, first, the substrate transfer device 41 in the loading/unloading station 4 removes one wafer W from the carrier C placed in the placement station 3 and places the removed wafer W on the transfer table 51 in the delivery station 5. The wafer W placed on the transfer table 51 is then transported by the substrate transfer device 61 in the liquid processing station 6 and loaded into one of the liquid processing units 2.

After the wafer W is loaded into the liquid processing unit 2 and subjected to a substrate cleaning process by the liquid processing unit 2, it is removed from the liquid processing unit 2 by the substrate transfer device 61 and placed back on the transfer table 51. The processed wafer W placed on the transfer table 51 is then returned to the carrier C by the substrate transfer device 41 of the load/unload station 4.

<Piping line configuration of liquid treatment equipment>
Next, the configuration of various piping lines provided in liquid processing apparatus 1 will be described with reference to Figures 3 to 5. Figure 3 is a schematic vertical cross-sectional view of liquid processing apparatus 1 according to an embodiment. As shown in Figure 3, the processing liquid supply system includes supply source 80, piping lines 81 to 84, multiple valve boxes 85, and multiple flow control units 86.

The supply source 80 supplies various processing liquids. The supply source 80 includes, for example, multiple tanks (not shown) that individually store the various processing liquids, and multiple pumps (not shown) that pump the various processing liquids stored in the multiple tanks to the corresponding piping lines 81-84.

Pipe lines 81-84 are each connected at one end to supply source 80, forming a circulation path for the corresponding processing liquid. Pipe lines 81 and 82 are examples of heat sources, and supply high-temperature processing liquid to liquid processing unit 2.

Pipe line 81 carries, for example, high-temperature SC1 (a mixture of ammonia and hydrogen peroxide) supplied from supply source 80. Pipe line 82 carries, for example, high-temperature DIW (deionized water) supplied from supply source 80.

Pipe line 83 and pipe line 84 supply room temperature processing liquid to liquid processing unit 2. For example, room temperature DHF (dilute hydrofluoric acid) supplied from supply source 80 flows through pipe line 83. For example, room temperature DIW supplied from supply source 80 flows through pipe line 84.

Multiple valve boxes 85 are arranged along the piping lines 81-84 and below the multiple liquid processing units 2 provided in the liquid processing station 6.

The valve box 85 houses the flow control unit 86. The flow control unit 86 is a device in which flow control devices, including flow control valves and flow meters, are mounted on a flat support member.

Figure 4 is a schematic cross-sectional view of a liquid treatment module 7 according to an embodiment. In the liquid treatment device 1 according to an embodiment, as shown in Figure 4, one liquid treatment module 7 is composed of one liquid treatment unit 2 and one heat source region 8 corresponding to that liquid treatment unit 2.

The heat source region 8 includes the above-mentioned piping lines 81-84, valve box 85, and flow control unit 86, as well as a control board 87. The control board 87 is an example of a heat source and controls the flow control unit 86 and other components. The control board 87 is housed, for example, in the valve box 85.

A temperature sensor 91 and a fan 92 are also provided near the heat source region 8. The temperature sensor 91 measures the temperature of the heat source region 8. The fan 92 cools the heat source region 8. The fan 92 cools the heat source region 8, for example, by blowing the atmosphere outside the liquid processing device 1 toward the heat source region 8.

As shown in Figure 4, in the heat source region 8 according to this embodiment, the heat source piping lines 81, 82, and control board 87 are arranged above the valve box 85, while the piping lines 83 and 84, through which room temperature processing liquid flows, are arranged below the valve box 85.

In this way, by arranging the piping lines 83 and 84, through which room-temperature processing liquid flows, away from the heat source, it is possible to suppress the temperature rise of the room-temperature processing liquid and to suppress the temperature drop of the high-temperature processing liquid. In other words, according to this embodiment, it is possible to reduce temperature variations among various processing liquids.

The liquid processing apparatus 1 is also provided with a discharge system for discharging the processing liquid outside the liquid processing apparatus 1 after it has been supplied to the liquid processing unit 2. As shown in Figure 4, this discharge system is composed of a main discharge pipe 100 and multiple branch discharge pipes 101, 102 (see Figure 5) that branch off from the main discharge pipe 100 for each processing liquid.

As shown in FIG. 4, the main discharge pipe 100 and the branch discharge pipes 101 and 102 are arranged in the liquid processing station 6. After being supplied to the wafer W (see FIG. 5), various processing liquids are discharged to the outside of the liquid processing apparatus 1 through the main discharge pipe 100 and the branch discharge pipes 101 and 102.

Figure 5 is a schematic cross-sectional side view showing the configuration of a liquid processing unit 2 according to an embodiment. As shown in Figure 5, the liquid processing unit 2 includes a rotation plate 24 and a rotation support portion 25.

The rotating plate 24 rotatably holds the wafer W. The rotation support part 25 supports the rotating plate 24 from the underside and rotates the rotating plate 24 using a rotation motor (not shown).

The rotating plate 24 is a disc-shaped member, and its surface is provided with multiple holding members 241 that hold the wafers W. The wafers W are held above the surface of the rotating plate 24 via a gap. The rotation support 25 is rotatably held by a bearing 251 provided on the base plate 28 on which the liquid processing unit 2 is placed.

The liquid processing unit 2 also includes a first nozzle 26 that supplies high-temperature processing liquid to the surface of the wafer W, and a second nozzle 27 that supplies room-temperature processing liquid to the surface of the wafer W.

The first nozzle 26 is supported by the first arm 261 and can move between a processing position above the wafer W held on the rotating plate 24 and a retracted position retracted from this processing position. The second nozzle 27 is supported by the second arm 271 and can move between the processing position and the retracted position.

The first nozzle 26 is connected to the piping line 81 via the on-off valve 11 and the flow control unit 86, and is connected to the piping line 82 via the on-off valve 12 and the flow control unit 86.

The second nozzle 27 is connected to the piping line 83 via the on-off valve 13 and the flow control unit 86, and is connected to the piping line 84 via the on-off valve 14 and the flow control unit 86.

In this embodiment, a first arm 261 supporting a first nozzle 26 that discharges high-temperature processing liquid and a second arm 271 supporting a second nozzle 27 that discharges room-temperature processing liquid are provided separately.

As a result, in this embodiment, compared to when the first nozzle 26 and the second nozzle 27 are provided on a single arm, it is possible to suppress the temperature rise of room-temperature processing liquid and to suppress the temperature drop of high-temperature processing liquid. In other words, according to this embodiment, it is possible to reduce temperature variations among various processing liquids.

Note that in the present disclosure, the configuration of the nozzles provided in the liquid processing unit 2 is not limited to the example shown in Figure 5, and the liquid processing unit 2 may be provided with individual nozzles connected to the piping lines 81 to 84, respectively.

The liquid processing unit 2 also includes a cup 23 for receiving and discharging the chemical liquid spun off from the rotating wafer W. The cup 23 is an annular member arranged to surround the wafer W held on the rotating plate 24, and the processing liquid inside can be discharged via a main discharge pipe 100 connected to the bottom surface.

The main discharge pipe 100 branches downstream and is connected via on-off valves 15 and 16 to a discharge branch pipe 101 for discharging SC1 or DHF and a discharge branch pipe 102 for discharging DIW, respectively.

A casing 21 is provided outside the cup 23. An opening/closing door (not shown) is provided on the surface of the casing 21 facing the substrate transfer device 61 (see Figure 2), and opening this opening/closing door allows the substrate transfer device 61 to enter the casing 21.

<Temperature control process>
Next, details of the temperature control process in liquid treatment apparatus 1 according to the embodiment will be described with reference to Figures 6 to 13. Figures 6 to 8 are diagrams for explaining the temperature control process of multiple liquid treatment modules 7 according to the embodiment.

In the following examples, the five liquid treatment modules 7 arranged horizontally will be referred to as liquid treatment modules M1 to M5, starting from one side. In the graphs, the solid line indicates the current temperature of the heat source area 8, the dashed line indicates the past temperature of the heat source area 8, and the dashed line indicates the predicted future temperature of the heat source area 8.

As shown in Figure 6, variations in temperature may occur in the multiple heat source regions 8 (see Figure 4) provided in each of the liquid treatment modules M1 to M5. These temperature variations in the multiple heat source regions 8 are due, for example, to differences in the installation locations of the liquid treatment modules M1 to M5 (for example, differences in the position of the exhaust ducts or differences between adjacent liquid treatment modules 7).

Furthermore, the temperature variations in the multiple heat source regions 8 are caused by, for example, the difference in the flow rate of the treatment liquid between upstream and downstream due to the shared use of piping lines 81-84 (see Figure 4) by liquid treatment modules M1-M5.

Furthermore, the temperature variations in the multiple heat source regions 8 are caused, for example, by differences in the timing of liquid treatment in liquid treatment modules M1 to M5 (for example, liquid treatment module 7 being stopped in maintenance mode).

In this embodiment, the control unit 9 (see Figure 2) individually controls the multiple fans 92 (see Figure 4) provided in each of the liquid treatment modules M1 to M5. As a result, as shown in Figure 7, the control unit 9 ensures that the temperatures of all heat source regions 8 provided in the liquid treatment modules M1 to M5 fall within the first temperature range R1.

The first temperature range R1 is an example of a given temperature range, for example, the range between temperature T1 and temperature T2. The control unit 9 also measures the temperature of the heat source region 8 using a temperature sensor 91 (see Figure 4).

The control unit 9 then performs liquid processing on the wafer W (see FIG. 5) only in the liquid processing modules 7 where the temperature of the heat source region 8 falls within the first temperature range R1. In other words, the control unit 9 does not perform liquid processing on the wafer W in the liquid processing modules 7 where the temperature of the heat source region 8 does not fall within the first temperature range R1.

As a result, by performing liquid treatment using liquid treatment modules 7 with large temperature variations in the heat source region 8, it is possible to prevent large temperature variations in liquid treatment between multiple liquid treatment modules 7. In other words, according to this embodiment, it is possible to reduce temperature variations in liquid treatment between multiple liquid treatment modules 7.

In the above example, the control unit 9 does not perform liquid processing on the wafer W in a liquid processing module 7 where the temperature of the heat source region 8 is not within the first temperature range R1, but the present disclosure is not limited to such an example.

For example, in a liquid processing module 7 where the temperature of the heat source region 8 is not within the first temperature range R1, the control unit 9 may discharge the processing liquid to a location other than the wafer W to be processed (for example, a dummy wafer or a processing liquid outlet).

This allows the processing liquid, which has become unstable in temperature due to being retained in the heat source area 8 for a long period of time, to be discharged through the piping lines 81-84, thereby reducing the temperature variation of the processing liquid being discharged.

Furthermore, even after the temperatures of all heat source regions 8 have entered the first temperature range R1, the control unit 9 continues to control the temperatures of each heat source region 8 by individually controlling the multiple fans 92. In this embodiment, as shown in FIG. 8, the temperatures of all heat source regions 8 provided in liquid treatment modules M1 to M5 are brought closer to the average temperature Ta of each heat source region 8.

This further reduces the temperature variation among the multiple heat source regions 8, thereby further reducing the temperature variation in liquid treatment among the multiple liquid treatment modules 7.

In addition, in an embodiment, as shown in FIG. 8, the control unit 9 may control the temperatures of all heat source regions 8 provided in the liquid treatment modules M1 to M5 so that they fall within the second temperature range R2. This second temperature range R2 is included in the first temperature range R1, but is a temperature range narrower than the first temperature range R1 (for example, the range between temperature T3 and temperature T4).

This also makes it possible to further reduce temperature variations among the multiple heat source regions 8, thereby further reducing temperature variations in liquid treatment among the multiple liquid treatment modules 7.

Figures 9 and 10 are diagrams illustrating another temperature control process for multiple liquid treatment modules 7 according to an embodiment. As shown in Figure 9, even if the temperatures of all heat source regions 8 are currently within the first temperature range R1, depending on the expected operating rate of each module, the temperatures of at least some of the heat source regions 8 may fall outside the first temperature range R1 in the future.

For example, in the example of Figure 9, because the planned operating rates of liquid treatment module M2 and liquid treatment module M3 are high, it is predicted that the temperature of heat source region 8 will deviate from first temperature range R1 in the future. In particular, in the example of Figure 9, it is predicted that the temperature of heat source region 8 of liquid treatment module M3 will deviate significantly from first temperature range R1 in the future.

Therefore, in this embodiment, the control unit 9 first calculates the planned operating rates of the liquid treatment modules M1 to M5 based on the liquid treatment schedules planned for the liquid treatment modules M1 to M5.

The control unit 9 then predicts the future temperatures of the heat source regions 8 in the liquid treatment modules M1 to M5 based on the calculated planned operating rates of the liquid treatment modules M1 to M5. Then, the control unit 9 individually controls the fans 92 provided in each of the liquid treatment modules M1 to M5 based on the predicted future temperatures of the heat source regions 8, as shown in FIG. 10.

For example, in the example of Figure 10, since the planned operating rate is high, it is predicted that the temperature of the heat source region 8 of liquid treatment module M3 will fall significantly outside the first temperature range R1, so the control unit 9 controls the fan 92 of liquid treatment module M3 to a high rotation speed.

On the other hand, because the planned operating rate is low, it is predicted that the temperature of the heat source region 8 of liquid treatment module M1 will not deviate from the first temperature range R1, so the control unit 9 controls the fan 92 of liquid treatment module M1 to a low rotation speed.

In this manner, in an embodiment, the future temperature of the heat source area 8 may be predicted based on the planned operating rates of the liquid treatment modules M1 to M5, and the fans 92 provided in each of the liquid treatment modules M1 to M5 may be individually controlled based on the predicted future temperature of the heat source area 8.

This makes it possible to reduce temperature variations in liquid treatment between multiple liquid treatment modules 7, even if there is a large variation in operating rates between multiple liquid treatment modules 7.

Figures 11 and 12 are diagrams illustrating yet another temperature control process for multiple liquid treatment modules 7 according to an embodiment. As shown in Figure 11, there may be variations in the ease with which the multiple heat source regions 8 (see Figure 4) provided in each of the liquid treatment modules M1 to M5 cool.

This variation in the ease of cooling among the multiple heat source regions 8 is due, for example, to differences in the installation locations of the liquid treatment modules M1 to M5 (for example, differences in the position of the exhaust ducts or adjacent liquid treatment modules 7).

Furthermore, the variation in the ease of cooling among the multiple heat source regions 8 is due to, for example, the fact that the piping lines 81-84 are shared by the liquid treatment modules M1-M5, resulting in different flow rates upstream and downstream.

Furthermore, this variation in the ease of cooling among the multiple heat source regions 8 is due, for example, to differences in the timing of liquid treatment among the liquid treatment modules M1 to M5 (for example, liquid treatment module 7 being stopped in maintenance mode).

In this embodiment, due to variations in the ease of cooling among the multiple heat source regions 8, even if the fans 92 are rotated at the same rotation speed in each module, they may not be cooled equally.

For example, in the example of Figure 11, liquid treatment module M3 is difficult to cool, so it is predicted that it will be difficult to enter the first temperature range R1 even if the fan 92 is rotated at the same rotation speed as the other liquid treatment modules 7.

In this embodiment, the control unit 9 first determines the ease of cooling of each of the heat source regions 8 provided in the liquid treatment modules M1 to M5. For example, in this embodiment, during the standby time of the liquid treatment modules M1 to M5, the airflow rate of the fans 92 is set to a constant for all piping lines, and the temperature sensor 91 measures the rate of temperature drop, thereby determining the ease of cooling of each of the heat source regions 8.

The control unit 9 then individually controls the fans 92 provided in each of the liquid treatment modules M1 to M5 based on the calculated ease of cooling of the heat source region 8.

For example, in the example of Figure 12, since it is determined that the heat source area 8 of liquid treatment module M3 is difficult to cool, the control unit 9 controls the fan 92 of liquid treatment module M3 to a high rotation speed. On the other hand, since it is determined that the heat source area 8 of liquid treatment module M1 is easy to cool, the control unit 9 controls the fan 92 of liquid treatment module M1 to a low rotation speed.

In this manner, in an embodiment, the fans 92 provided in each of the liquid treatment modules M1 to M5 may be individually controlled based on how easily the heat source regions 8 in the liquid treatment modules M1 to M5 cool.

This reduces the temperature variation in liquid treatment between multiple liquid treatment modules 7, even if the ease of cooling of the heat source region 8 varies between multiple liquid treatment modules 7.

Figure 13 is a diagram illustrating the exhaust process of multiple liquid treatment modules 7 according to an embodiment. Multiple heat source regions 8 arranged in a horizontal line are configured as a group of heat source regions 8A that are connected to each other as shown in Figure 13.

The liquid treatment device 1 according to this embodiment also has an exhaust port 93 that exhausts the atmosphere within the group of heat source regions 8A. This prevents the atmosphere within the heat source regions 8 from escaping from unexpected locations when the volume of air supplied to the heat source regions 8 by the fan 92 increases.

In addition, in an embodiment, the control unit 9 may control the amount of air exhausted from the exhaust port 93 according to the rotation speed of the multiple fans 92. For example, the control unit 9 may adjust the opening degree of the exhaust port 93 according to the rotation speed of the multiple fans 92. This makes it possible to maintain a constant pressure environment in the heat source region 8.

The substrate processing apparatus (liquid processing apparatus 1) according to this embodiment includes multiple liquid processing modules 7 and a controller 9. The multiple liquid processing modules 7 are arranged in a row, either horizontally or vertically, and supply processing liquid to substrates (wafers W) for liquid processing. The controller 9 controls each component. Each liquid processing module 7 includes a liquid processing unit 2, a heat source region 8, a temperature sensor 91, and a fan 92. The liquid processing unit 2 performs liquid processing on the substrates (wafers W). The heat source region 8 includes a heat source (piping line 81, piping line 82, control board 87). The temperature sensor 91 measures the temperature of the heat source region 8. The fan 92 cools the heat source region 8. The controller 9 individually controls the multiple fans 92 so that the temperatures of all of the multiple heat source regions 8 fall within a given temperature range (first temperature range R1). This reduces temperature variations during liquid processing among the multiple liquid processing modules 7.

Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, the heat source region 8 is arranged across multiple liquid processing modules 7 and has piping lines 81-84 through which processing liquid flows. This simplifies the configuration of the piping lines 81-84 compared to when individual piping lines are connected to each individual liquid processing module 7.

Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, the control unit 9 does not perform liquid processing on substrates (wafers W) in liquid processing modules 7 having heat source regions 8 outside a given temperature range (first temperature range R1). This makes it possible to suppress a decrease in yield of wafers W due to defective liquid processing.

Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, the control unit 9 discharges the processing liquid to a location other than the substrate (wafer W) in a liquid processing module 7 having a heat source region 8 outside a given temperature range (first temperature range R1). This makes it possible to suppress a decrease in the yield of wafers W due to poor liquid processing.

Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to this embodiment, when all heat source regions 8 are within a given temperature range (first temperature range R1), the control unit 9 individually controls the multiple fans 92, with the average temperature Ta of all heat source regions 8 set as the target value. This further reduces temperature variations in liquid processing between the multiple liquid processing modules 7.

Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to the embodiment, the control unit 9 controls the fan 92 based on a preset substrate (wafer W) processing schedule, even when the heat source region 8 is within a given temperature range (first temperature range R1). This makes it possible to reduce temperature variations in liquid processing between multiple liquid processing modules 7, even when there is a large variation in the operating rates between multiple liquid processing modules 7.

Furthermore, in the substrate processing apparatus (liquid processing apparatus 1) according to the embodiment, the control unit 9 individually controls the multiple fans 92 according to how easily each heat source region 8 cools. This makes it possible to reduce temperature variations in liquid processing between the multiple liquid processing modules 7, even if the ease with which the heat source regions 8 cool varies between the multiple liquid processing modules 7.

The substrate processing apparatus (liquid processing apparatus 1) according to this embodiment further includes an exhaust port 93 that exhausts the atmosphere from the multiple heat source regions 8. The control unit 9 also controls the amount of air exhausted from the exhaust port 93 according to the rotation speed of the multiple fans 92. This allows the pressure environment in the heat source regions 8 to be kept constant.

<Temperature control process procedure>
Next, the procedure of the temperature control process according to the embodiment will be described with reference to Fig. 14. Fig. 14 is a flowchart showing the procedure of the temperature control process executed by liquid processing apparatus 1 according to the embodiment.

In the temperature processing according to this embodiment, the control unit 9 first determines whether the temperatures of all heat source areas 8 are within the first temperature range R1 (step S101). If the temperatures of at least some of the heat source areas 8 are not within the first temperature range R1 (step S101, No), the control unit 9 individually controls the multiple fans 92 so that the temperatures of all heat source areas 8 are within the first temperature range R1 (step S102).

Next, the control unit 9 determines whether the temperatures of all heat source areas 8 are within the first temperature range R1 (step S103). If the temperatures of at least some of the heat source areas 8 are not within the first temperature range R1 (step S103, No), the control unit 9 determines whether a given time (e.g., 60 seconds) or more is required to bring the temperatures into the first temperature range R1 (step S104).

If a time longer than the given time is required to enter the first temperature range R1 (step S104, Yes), the control unit 9 discharges the processing liquid to a location other than the wafer W in the liquid processing module 7 having the heat source region 8 (step S105). The control unit 9 then ends the series of temperature control processes.

On the other hand, if a time longer than the given time is not required to enter the first temperature range R1 (step S104, No), the control unit 9 returns to the processing of step S102.

Furthermore, if the temperatures of all heat source areas 8 are found to be within the first temperature range R1 in the processing of step S101 (step S101, Yes), the control unit 9 controls the multiple fans 92 individually, using the average temperature Ta of all heat source areas 8 as the target value (step S106). The control unit 9 then terminates the series of temperature control processes.

Furthermore, if the temperatures of all heat source regions 8 are within the first temperature range R1 in the processing of step S103 (step S103, Yes), the control unit 9 proceeds to the processing of step S106.

The substrate processing method according to this embodiment includes a step of individually controlling the multiple fans 92 in the liquid processing apparatus 1 described above so that the temperatures of the multiple heat source regions 8 are all within a given temperature range (first temperature range R1). This reduces temperature variations in liquid processing between the multiple liquid processing modules 7.

The above describes embodiments of the present disclosure, but the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in a variety of forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

W: Wafer (an example of a substrate)
1. Liquid processing apparatus (an example of a substrate processing apparatus)
2 Liquid treatment unit 7, M1 to M5 Liquid treatment modules 8 Heat source area 9 Control unit 81, 82 Piping lines (an example of a heat source)
87 Control board (an example of a heat source)
91 Temperature sensor 92 Fan R1 First temperature range (an example of a predetermined temperature range)
Ta average temperature

Claims (7)

a plurality of liquid processing modules arranged side by side in at least one of a horizontal direction and a vertical direction, and supplying a processing liquid to a substrate to perform liquid processing;
a control unit that controls each unit;
Equipped with
The liquid treatment module comprises:
a liquid processing unit for performing liquid processing on the substrate;
a heat source region having a heat source below the liquid treatment unit;
a fan located near the heat source region and configured to blow external atmosphere toward the heat source region to cool the heat source region;
a temperature sensor for measuring the temperature of the heat source region;
and
The control unit
individually controlling the plurality of fans so that the temperatures of the plurality of heat source regions all fall within a given temperature range;
In the liquid processing module having the heat source region outside the given temperature range, the processing liquid is discharged to a location other than the substrate. The control unit
The substrate processing apparatus according to claim 1 , wherein when all of the heat source regions are within the given temperature range, the plurality of fans are individually controlled with an average temperature of all of the heat source regions as a target value. The control unit
The substrate processing apparatus according to claim 1 , wherein the fan is controlled based on a preset processing schedule for the substrate even when the temperature of the heat source region is within the given temperature range. The control unit
4. The substrate processing apparatus of claim 1, wherein during standby times of the plurality of liquid processing modules, the airflow rates of the plurality of fans are all kept constant, and the plurality of fans are individually controlled according to the ease of cooling of each of the heat source regions determined by measuring the rate at which the temperature of the plurality of heat source regions drops using the plurality of temperature sensors, so that the rotation speed of the fan cooling the heat source region determined to be difficult to cool is higher than the rotation speed of the fan cooling the heat source region determined to be easy to cool. Further, the heating element further includes a plurality of exhaust ports for exhausting the atmosphere of the heat source region,
The control unit
5. The substrate processing apparatus according to claim 1, wherein the amount of air exhausted from the exhaust port is controlled in accordance with the rotation speed of the plurality of fans. The heat source region is
6. The substrate processing apparatus according to claim 1, further comprising a piping line arranged across a plurality of said liquid processing modules and through which the processing liquid flows. A substrate processing apparatus comprising a plurality of liquid processing modules arranged side by side in at least one of a horizontal direction and a vertical direction, and supplying a processing liquid to a substrate to perform liquid processing, each liquid processing module including: a liquid processing unit that performs liquid processing on the substrate; a heat source region having a heat source; a temperature sensor that measures the temperature of the heat source region; and a fan that is located near the heat source region and cools the heat source region by blowing external atmosphere toward the heat source region,
individually controlling the plurality of fans so that the temperatures of the plurality of heat source regions all fall within a given temperature range;
discharging a processing liquid to a location other than the substrate in the liquid processing module having the heat source region outside the given temperature range;
A substrate processing method comprising: