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JP7741666B2 - Inrush current prevention circuit - Google Patents
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JP7741666B2 - Inrush current prevention circuit - Google Patents

Inrush current prevention circuit

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JP7741666B2
JP7741666B2 JP2021146335A JP2021146335A JP7741666B2 JP 7741666 B2 JP7741666 B2 JP 7741666B2 JP 2021146335 A JP2021146335 A JP 2021146335A JP 2021146335 A JP2021146335 A JP 2021146335A JP 7741666 B2 JP7741666 B2 JP 7741666B2
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恵二郎 伊藤
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Japan Radio Co Ltd
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Description

本開示は、電源回路の起動時及び復電時に、負荷回路が有する電源回路側における一次側コンデンサへの突入電流を防止する突入電流防止回路に関する。 This disclosure relates to an inrush current prevention circuit that prevents inrush current from flowing into a primary-side capacitor on the power supply circuit side of a load circuit when the power supply circuit is started up or restored to power.

電源回路の起動時に、負荷回路が有する電源回路側における一次側コンデンサへの突入電流を防止する突入電流防止回路が、特許文献1、2等に開示されている。 Patent documents 1 and 2, among others, disclose inrush current prevention circuits that prevent inrush current from flowing into the primary-side capacitor on the power supply circuit side of a load circuit when the power supply circuit is started.

まず、第1従来技術(特許文献1)の突入電流防止回路を説明する。第1従来技術の突入電流防止回路の回路構成を図1に示す。第1従来技術の突入電流防止回路の回路特性例を図2に示す。突入電流防止回路3は、積分回路抵抗R1、電源分圧抵抗R2、積分回路コンデンサC3、帰還回路抵抗R4、帰還回路コンデンサC5、発振防止抵抗R6及び電流制限素子FETを備える。負荷回路2は、一次側コンデンサCLを備える。図2では、電源回路1からの入力電圧VinはDC48Vであり、負荷回路2の等価抵抗RLは48Ωであり、負荷回路2の等価抵抗RLの電流ILは1Aであり、一次側コンデンサCLは100μFであり、電流制限素子FETのゲートON/ОFF閾値電圧Vthは2Vであり、電流制限素子FETのゲート上限電圧VGSmaxは12Vである。 First, we will explain the inrush current prevention circuit of the first prior art (Patent Document 1). Figure 1 shows the circuit configuration of the inrush current prevention circuit of the first prior art. Figure 2 shows example circuit characteristics of the inrush current prevention circuit of the first prior art. The inrush current prevention circuit 3 includes an integrating circuit resistor R1, a power supply voltage dividing resistor R2, an integrating circuit capacitor C3, a feedback circuit resistor R4, a feedback circuit capacitor C5, an oscillation prevention resistor R6, and a current limiting element FET. The load circuit 2 includes a primary-side capacitor CL. In Figure 2, the input voltage Vin from the power supply circuit 1 is DC 48 V, the equivalent resistance RL of the load circuit 2 is 48 Ω, the current IL of the equivalent resistance RL of the load circuit 2 is 1 A, the primary-side capacitor CL is 100 μF, the gate ON/OFF threshold voltage Vth of the current limiting element FET is 2 V, and the gate upper limit voltage VGSmax of the current limiting element FET is 12 V.

電流制限素子FETは、電源回路1の起動時に、ゲート電圧が徐々に上昇され、一次側コンデンサCLへの突入電流を防止する。積分回路コンデンサC3、積分回路抵抗R1及び電源分圧抵抗R2は、電源回路1の起動時に、電流制限素子FETのゲート電圧を徐々に上昇させる。積分回路抵抗R1及び電源分圧抵抗R2は、電流制限素子FETのゲート電圧の上限を、電源回路1からの入力電圧と比べて低く設定する。図2の左欄では、電源分圧抵抗R2の端子間電圧は、電源回路1の起動後2msに、電流制限素子FETのゲートON/ОFF閾値電圧Vth=2Vに到達し、電源回路1の起動後200msに、安定状態に到達する。電源回路1の起動時に、電流制限素子FETの消費電力は、電源回路1の起動後10msで26Wとなり、電流制限素子FETの蓄積熱量は、電源回路1の起動後20msで340mJとなる。電源回路1の起動時に、電流制限素子FETのこれらの特性は、電流制限素子FETの許容損失に換算すると6Wに相当する。 The current limiting element FET gradually increases its gate voltage during startup of the power supply circuit 1, preventing inrush current to the primary-side capacitor CL. The integrator capacitor C3, integrator resistor R1, and power supply voltage divider resistor R2 gradually increase the gate voltage of the current limiting element FET during startup of the power supply circuit 1. The integrator resistor R1 and power supply voltage divider resistor R2 set the upper limit of the gate voltage of the current limiting element FET lower than the input voltage from the power supply circuit 1. In the left column of Figure 2, the voltage across the power supply voltage divider resistor R2 reaches the gate ON/OFF threshold voltage Vth = 2V of the current limiting element FET 2 ms after startup of the power supply circuit 1 and reaches a stable state 200 ms after startup of the power supply circuit 1. During startup of the power supply circuit 1, the power consumption of the current limiting element FET is 26 W 10 ms after startup of the power supply circuit 1, and the accumulated heat of the current limiting element FET is 340 mJ 20 ms after startup of the power supply circuit 1. When the power supply circuit 1 starts up, these characteristics of the current limiting element FET are equivalent to an allowable loss of 6 W for the current limiting element FET.

次に、第2従来技術(特許文献2)の突入電流防止回路を説明する。第2従来技術の突入電流防止回路の回路構成を図3に示す。第2従来技術の突入電流防止回路の回路特性例を図4に示す。突入電流防止回路4は、積分回路抵抗R1、クランプ素子D1、電源分圧抵抗R2、スイッチ素子D2、積分回路コンデンサC3、急速放電抵抗R9、電流制限素子FET及びトランジスタTRを備える。負荷回路2は、一次側コンデンサCLを備える。図4では、電源回路1からの入力電圧VinはDC48Vであり、負荷回路2の等価抵抗RLは48Ωであり、負荷回路2の等価抵抗RLの電流ILは1Aであり、一次側コンデンサCLは100μFであり、電流制限素子FETのゲートON/ОFF閾値電圧Vthは2Vであり、電流制限素子FETのゲート上限電圧VGSmaxは12Vである。 Next, we will explain the inrush current prevention circuit of the second prior art (Patent Document 2). Figure 3 shows the circuit configuration of the inrush current prevention circuit of the second prior art. Figure 4 shows example circuit characteristics of the inrush current prevention circuit of the second prior art. The inrush current prevention circuit 4 includes an integrating circuit resistor R1, a clamping element D1, a power supply voltage dividing resistor R2, a switching element D2, an integrating circuit capacitor C3, a rapid discharge resistor R9, a current limiting element FET, and a transistor TR. The load circuit 2 includes a primary-side capacitor CL. In Figure 4, the input voltage Vin from the power supply circuit 1 is DC 48 V, the equivalent resistance RL of the load circuit 2 is 48 Ω, the current IL of the equivalent resistance RL of the load circuit 2 is 1 A, the primary-side capacitor CL is 100 μF, the gate ON/OFF threshold voltage Vth of the current limiting element FET is 2 V, and the gate upper limit voltage VGSmax of the current limiting element FET is 12 V.

電流制限素子FETは、電源回路1の起動時に、ゲート電圧が徐々に上昇され、一次側コンデンサCLへの突入電流を防止する。積分回路コンデンサC3、積分回路抵抗R1及び電源分圧抵抗R2は、電源回路1の起動時に、電流制限素子FETのゲート電圧を徐々に上昇させる。スイッチ素子D2は、積分回路コンデンサC3と積分回路抵抗R1との間を導通する。積分回路抵抗R1及び電源分圧抵抗R2は、電流制限素子FETのゲート電圧の上限を、電源回路1からの入力電圧と比べて低く設定する。図4の左欄では、電源分圧抵抗R2の端子間電圧は、電源回路1の起動後2msに、電流制限素子FETのゲートON/ОFF閾値電圧Vth=2Vに到達し、電源回路1の起動後200msに、安定状態に到達する。電源回路1の起動時に、電流制限素子FETの消費電力は、電源回路1の起動後10msで26Wとなり、電流制限素子FETの蓄積熱量は、電源回路1の起動後20msで340mJとなる。電源回路1の起動時に、電流制限素子FETのこれらの特性は、電流制限素子FETの許容損失に換算すると6Wに相当する。 When the power supply circuit 1 starts up, the gate voltage of the current limiting element FET gradually increases, preventing inrush current to the primary-side capacitor CL. The integrator circuit capacitor C3, integrator circuit resistor R1, and power supply voltage divider resistor R2 gradually increase the gate voltage of the current limiting element FET when the power supply circuit 1 starts up. The switch element D2 provides conduction between the integrator circuit capacitor C3 and the integrator circuit resistor R1. The integrator circuit resistor R1 and power supply voltage divider resistor R2 set the upper limit of the gate voltage of the current limiting element FET lower than the input voltage from the power supply circuit 1. In the left column of Figure 4, the voltage across the power supply voltage divider resistor R2 reaches the gate ON/OFF threshold voltage Vth = 2V of the current limiting element FET 2 ms after the power supply circuit 1 starts up, and reaches a stable state 200 ms after the power supply circuit 1 starts up. When the power supply circuit 1 starts up, the power consumption of the current limiting element FET is 26 W 10 ms after the power supply circuit 1 starts up, and the amount of heat accumulated in the current limiting element FET is 340 mJ 20 ms after the power supply circuit 1 starts up. When the power supply circuit 1 starts up, these characteristics of the current limiting element FET are converted into an allowable loss of the current limiting element FET, equivalent to 6 W.

特開2005-045957号公報Japanese Patent Application Laid-Open No. 2005-045957 特開平05-336737号公報Japanese Patent Application Publication No. 05-336737

まず、第1従来技術(特許文献1)の解決課題を説明する。積分回路コンデンサC3、積分回路抵抗R1及び電源分圧抵抗R2は、電源回路1の瞬断時及び瞬低時に、一次側コンデンサCLの放電に伴って、電流制限素子FETのゲート電圧を徐々に下降させる。ここで、積分回路コンデンサC3、積分回路抵抗R1及び電源分圧抵抗R2から構成されるCR放電回路の時定数は、一次側コンデンサCLの放電回路の時定数と比べて数十倍程度大きい。そして、積分回路コンデンサC3の電圧降下量は、一次側コンデンサCLの電圧降下量のR2/(R1+R2)倍でしかない。よって、図2の中欄の第1段では、電流制限素子FETのゲート電圧は、電源回路1の瞬断後及び深い瞬低後10ms経過しても11Vであり、ゲートON/OFF閾値電圧Vth=2Vまで降下しない。そして、図2の中欄の第2段では、一次側コンデンサCLの端子間電圧は、電源回路1の瞬断後及び深い瞬低後10msに、残留電圧として5Vしか残留していない。 First, we will explain the problem solved by the first prior art (Patent Document 1). During a momentary interruption or voltage drop in the power supply circuit 1, the integrator circuit capacitor C3, integrator circuit resistor R1, and power supply voltage divider resistor R2 gradually decrease the gate voltage of the current limiting element FET as the primary-side capacitor CL discharges. The time constant of the CR discharge circuit composed of the integrator circuit capacitor C3, integrator circuit resistor R1, and power supply voltage divider resistor R2 is several tens of times larger than the time constant of the discharge circuit for the primary-side capacitor CL. Furthermore, the voltage drop across the integrator circuit capacitor C3 is only R2/(R1 + R2) times the voltage drop across the primary-side capacitor CL. Therefore, in the first row of the middle column of Figure 2, the gate voltage of the current limiting element FET remains at 11 V even 10 ms after a momentary interruption or deep voltage drop in the power supply circuit 1, and does not decrease to the gate ON/OFF threshold voltage Vth = 2 V. In the second row of the middle column of Figure 2, the terminal voltage of the primary-side capacitor CL remains at only 5 V as a residual voltage 10 ms after the power supply circuit 1 experiences a momentary interruption and a deep momentary sag.

ここで、電流制限素子FETのゲート電圧が、ゲートON/OFF閾値電圧Vth=2Vまで降下しないうちに、電源回路1が、瞬断状態又は深い瞬低状態から復電状態へと遷移することがある。すると、図2の右欄の第1段では、電流制限素子FET(ぎりぎりのON状態のままである)のドレイン電流は、電源回路1の復電後直ちに、再突入電流として160Aに達してしまう。そして、図2の右欄の第2段では、電流制限素子FETの消費電力は、電源回路1の復電後20μsまでに、最大電力として2.5kWに達してしまう。さらに、図2の右欄の第3段では、電流制限素子FETの蓄積熱量は、電源回路1の復電後20μsに、39mJに達してしまう。よって、電源回路1の急速な復電時に、電流制限素子FETのこれらの特性は、電流制限素子FETの許容損失に換算すると24Wに相当し、電源回路1の起動時と比較して、4倍の電流制限素子FETの許容損失に相当する。すると、電流制限素子FETとして、大型の品種を必要とする。 Here, the power supply circuit 1 may transition from a momentary interruption or deep voltage drop to a power recovery state before the gate voltage of the current limiting element FET drops to the gate ON/OFF threshold voltage Vth = 2V. In this case, in the first stage in the right column of Figure 2, the drain current of the current limiting element FET (which remains in the barely ON state) reaches a re-inrush current of 160A immediately after power is restored to the power supply circuit 1. In the second stage in the right column of Figure 2, the power consumption of the current limiting element FET reaches a maximum of 2.5kW within 20μs after power is restored to the power supply circuit 1. Furthermore, in the third stage in the right column of Figure 2, the accumulated heat of the current limiting element FET reaches 39mJ 20μs after power is restored to the power supply circuit 1. Therefore, when power is rapidly restored to the power supply circuit 1, these characteristics of the current limiting element FET are equivalent to an allowable loss of 24 W in terms of the current limiting element FET, which is four times the allowable loss of the current limiting element FET when the power supply circuit 1 is started up. This requires a larger model of current limiting element FET.

次に、第2従来技術(特許文献2)の解決課題を説明する。積分回路コンデンサC3及び急速放電抵抗R9は、電源回路1の瞬断時及び瞬低時に、一次側コンデンサCLの放電に伴って、電流制限素子FETのゲート電圧を徐々に下降させる。スイッチ素子D2は、積分回路コンデンサC3の端子間電圧が、電源分圧抵抗R2の端子間電圧と比べて高くなったときに、トランジスタTRをONにすることにより、積分回路コンデンサC3と急速放電抵抗R9との間を導通する。ここで、積分回路コンデンサC3及び急速放電抵抗R9から構成されるCR放電回路の時定数は、一次側コンデンサCLの放電回路の時定数と比べてほぼ同等である。そして、積分回路コンデンサC3の電圧降下量は、一次側コンデンサCLの電圧降下量のR2/(R1+R2)倍でしかない。よって、図4の中欄の第1段では、電流制限素子FETのゲート電圧は、電源回路1の瞬断後及び深い瞬低後8msに、ゲートON/OFF閾値電圧Vth=2Vまで降下する。そして、図4の中欄の第2段では、一次側コンデンサCLの端子間電圧は、電源回路1の瞬断後及び深い瞬低後8msに、残留電圧として8Vしか残留していない。 Next, we will explain the problem solved by the second prior art (Patent Document 2). During a momentary interruption or drop in the power supply circuit 1, the integrator circuit capacitor C3 and the rapid discharge resistor R9 gradually decrease the gate voltage of the current limiting element FET as the primary-side capacitor CL discharges. When the voltage across the integrator circuit capacitor C3 becomes higher than the voltage across the power supply voltage divider resistor R2, the switch element D2 turns on the transistor TR, thereby establishing conduction between the integrator circuit capacitor C3 and the rapid discharge resistor R9. The time constant of the CR discharge circuit composed of the integrator circuit capacitor C3 and the rapid discharge resistor R9 is approximately equal to the time constant of the discharge circuit for the primary-side capacitor CL. The voltage drop across the integrator circuit capacitor C3 is only R2/(R1 + R2) times the voltage drop across the primary-side capacitor CL. Therefore, in the first stage in the middle column of Figure 4, the gate voltage of the current limiting element FET drops to the gate ON/OFF threshold voltage Vth = 2V 8ms after the power supply circuit 1 experiences a momentary interruption and a deep momentary drop. Then, in the second stage in the middle column of Figure 4, the voltage across the primary side capacitor CL remains at a residual voltage of only 8V 8ms after the power supply circuit 1 experiences a momentary interruption and a deep momentary drop.

ここで、電流制限素子FETのゲート電圧が、ゲートON/OFF閾値電圧Vth=2Vまで降下しないうちに、電源回路1が、瞬断状態又は深い瞬低状態から復電状態へと遷移することがある。すると、図4の右欄の第1段では、電流制限素子FET(ぎりぎりのON状態のままである)のドレイン電流は、電源回路1の復電後直ちに、再突入電流として130Aに達してしまう。そして、図4の右欄の第2段では、電流制限素子FETの消費電力は、電源回路1の復電後20μsまでに、最大電力として1.8kWに達してしまう。さらに、図4の右欄の第3段では、電流制限素子FETの蓄積熱量は、電源回路1の復電後20μsに、27mJに達してしまう。よって、電源回路1の急速な復電時に、電流制限素子FETのこれらの特性は、電流制限素子FETの許容損失に換算すると18Wに相当し、電源回路1の起動時と比較して、3倍の電流制限素子FETの許容損失に相当する。すると、電流制限素子FETとして、大型の品種を必要とする。 Here, the power supply circuit 1 may transition from a momentary interruption or deep voltage drop to a power recovery state before the gate voltage of the current limiting element FET drops to the gate ON/OFF threshold voltage Vth = 2V. In this case, in the first stage in the right column of Figure 4, the drain current of the current limiting element FET (which remains in the barely ON state) reaches 130A as a re-inrush current immediately after power is restored to the power supply circuit 1. In the second stage in the right column of Figure 4, the power consumption of the current limiting element FET reaches a maximum of 1.8kW within 20μs after power is restored to the power supply circuit 1. Furthermore, in the third stage in the right column of Figure 4, the accumulated heat of the current limiting element FET reaches 27mJ 20μs after power is restored to the power supply circuit 1. Therefore, when power is rapidly restored to the power supply circuit 1, these characteristics of the current limiting element FET are equivalent to 18 W in terms of the allowable loss of the current limiting element FET, which is three times the allowable loss of the current limiting element FET when the power supply circuit 1 is started up. This requires a larger model of current limiting element FET.

そこで、前記課題を解決するために、本開示は、電源回路の起動時の突入電流防止機能を先行技術と同等に維持したまま、電源回路の瞬断後又は深い瞬低後の急速な復電時であっても、電流制限素子に印加される電力を起動時と同等以下まで低減することを目的とする。 To solve the above problem, the present disclosure aims to reduce the power applied to the current limiting element to the same level as at startup, even when power is rapidly restored after a momentary power outage or deep voltage drop in the power supply circuit, while maintaining the same level of inrush current prevention functionality at startup as in the prior art.

前記課題を解決するために、積分回路コンデンサ及び急速放電コンデンサを、互いに直列に接続し、一次側コンデンサと並列に接続する。そして、電源回路の瞬断時及び瞬低時に、一次側コンデンサの放電に伴って、積分回路コンデンサ及び急速放電コンデンサの放電を行なう。ここで、積分回路コンデンサ及び急速放電コンデンサから構成される放電回路は、CR放電回路ではなく、CR時定数を伴わずに、一次側コンデンサの放電と一体化して、放電を行なう。 To solve the above problem, the integrating circuit capacitor and the rapid discharge capacitor are connected in series with each other and in parallel with the primary side capacitor. Then, during a momentary power interruption or voltage drop in the power circuit, the integrating circuit capacitor and the rapid discharge capacitor discharge in conjunction with the discharge of the primary side capacitor. Here, the discharge circuit consisting of the integrating circuit capacitor and the rapid discharge capacitor is not a CR discharge circuit, and discharges without a CR time constant, integrated with the discharge of the primary side capacitor.

具体的には、本開示は、電源回路の起動時及び復電時に、負荷回路が有する前記電源回路側における一次側コンデンサへの突入電流を防止する突入電流防止回路であって、電源ラインに配置され、前記電源回路の起動時及び復電時に、制御電圧が徐々に上昇され、前記一次側コンデンサへの突入電流を防止する電流制限素子と、前記電源回路と並列に接続され、前記電源回路の起動時及び復電時に、前記電流制限素子の制御電圧を徐々に上昇させる積分回路コンデンサ及び積分回路抵抗と、前記積分回路コンデンサと直列に接続され、前記積分回路抵抗と並列に接続され、前記電源回路の瞬断時及び瞬低時に、前記一次側コンデンサの放電に伴って、前記積分回路コンデンサの放電とともに、放電を行なう急速放電コンデンサと、を備えることを特徴とする突入電流防止回路である。 Specifically, the present disclosure provides an inrush current prevention circuit that prevents inrush current from flowing to a primary-side capacitor on the power supply circuit side of a load circuit when the power supply circuit is started up and when power is restored. The inrush current prevention circuit includes: a current limiting element that is disposed on a power supply line and whose control voltage gradually increases when the power supply circuit is started up and when power is restored, thereby preventing inrush current from flowing to the primary-side capacitor; an integrating circuit capacitor and integrating circuit resistor that are connected in parallel with the power supply circuit and gradually increase the control voltage of the current limiting element when the power supply circuit is started up and when power is restored; and a rapid discharge capacitor that is connected in series with the integrating circuit capacitor and in parallel with the integrating circuit resistor and that discharges in conjunction with the discharge of the primary-side capacitor when the power supply circuit is momentarily interrupted or dips.

この構成によれば、電源回路の瞬断時及び深い瞬低時に、電流制限素子の制御電圧を急速に制御ON/OFF閾値電圧Vth以下に下降させることができ、一次側コンデンサの残留電圧がより高い時点で突入電流防止回路を停止することができる。よって、電源回路のその後の急速な復電時であっても、電流制限素子に印加される電力を起動時と同等以下まで低減することができる。 With this configuration, when the power supply circuit experiences a momentary interruption or deep drop, the control voltage of the current limiting element can be rapidly reduced to below the control ON/OFF threshold voltage Vth, and the inrush current prevention circuit can be stopped at a point when the residual voltage of the primary-side capacitor is higher. Therefore, even when the power supply circuit subsequently rapidly recovers, the power applied to the current limiting element can be reduced to the same level as at startup or lower.

また、本開示は、前記電源回路の瞬断時及び深い瞬低時に、前記積分回路コンデンサの電圧降下量が、前記急速放電コンデンサの電圧降下量と比べて大きくなるとともに、前記電流制限素子の制御電圧が、前記電流制限素子をオン状態からオフ状態へと切り替えるタイミングを早めるように、前記積分回路コンデンサの容量が、前記急速放電コンデンサの容量と比べて小さく設定されることを特徴とする突入電流防止回路である。 The present disclosure also provides an inrush current prevention circuit in which, during a momentary interruption or deep momentary drop in the power supply circuit, the amount of voltage drop in the integrating circuit capacitor becomes larger than the amount of voltage drop in the rapid discharge capacitor, and the capacitance of the integrating circuit capacitor is set smaller than the capacitance of the rapid discharge capacitor so that the control voltage of the current limiting element accelerates the timing at which the current limiting element switches from an on state to an off state.

この構成によれば、電源回路の瞬断時及び深い瞬低時に、電流制限素子の制御電圧を急速に制御ON/OFF閾値電圧Vth以下により短時間で下降させることができ、一次側コンデンサの残留電圧がより高い時点で突入電流防止回路を停止することができる。たとえ、突入電流防止回路が停止する直前に電源回路が復電した時も、電流制限素子への再突入電流の最大値をより低く抑えることができる。 With this configuration, when the power supply circuit experiences a momentary interruption or deep momentary sag, the control voltage of the current limiting element can be rapidly reduced below the control ON/OFF threshold voltage Vth in a short period of time, allowing the inrush current prevention circuit to be shut down at a point when the residual voltage of the primary-side capacitor is higher. Even if the power supply circuit is restored just before the inrush current prevention circuit is shut down, the maximum value of the re-inrush current to the current limiting element can be kept low.

また、本開示は、前記積分回路コンデンサと前記急速放電コンデンサとの間に接続され、前記電源回路の起動時及び復電時に、前記電流制限素子の制御端子及び前記積分回路コンデンサと前記急速放電コンデンサとの間を遮断し、前記電源回路の瞬断時及び瞬低時に、前記積分回路コンデンサと前記急速放電コンデンサとの間を導通するスイッチ素子をさらに備えることを特徴とする突入電流防止回路である。 The present disclosure also provides an inrush current prevention circuit that further includes a switch element connected between the integrating circuit capacitor and the rapid discharge capacitor, which disconnects the control terminal of the current limiting element and the integrating circuit capacitor and the rapid discharge capacitor when the power supply circuit is started up or restored to power, and which connects the integrating circuit capacitor and the rapid discharge capacitor when the power supply circuit is momentarily interrupted or dips.

この構成によれば、電源回路の起動時及び復電時に、積分回路コンデンサ及び急速放電コンデンサを分離することにより、これらのコンデンサの直列回路への突入電流を防止することができ、同時に電流制限素子の制御電圧を急速に上昇させないため、電流制限素子の突入電流の防止機能を維持することができる。 With this configuration, by isolating the integrating circuit capacitor and the rapid discharge capacitor when the power supply circuit is started up or restored to power, it is possible to prevent inrush current into the series circuit of these capacitors. At the same time, the control voltage of the current limiting element is not rapidly increased, thereby maintaining the inrush current prevention function of the current limiting element.

また、本開示は、前記スイッチ素子を介さず前記急速放電コンデンサと直列に接続され、前記スイッチ素子を介して前記積分回路コンデンサと並列に接続される電源分圧抵抗と、前記スイッチ素子を介さず前記急速放電コンデンサと並列に接続され、前記スイッチ素子を介して前記積分回路抵抗と並列に接続されるブリーダ抵抗と、をさらに備え、前記電源回路の起動時及び復電時に、前記急速放電コンデンサ、前記電源分圧抵抗及び前記ブリーダ抵抗は、前記急速放電コンデンサのCR充電回路を構成することを特徴とする突入電流防止回路である。 The present disclosure also provides an inrush current prevention circuit further comprising a power supply voltage dividing resistor connected in series with the rapid discharge capacitor without the switch element and connected in parallel with the integrating circuit capacitor via the switch element, and a bleeder resistor connected in parallel with the rapid discharge capacitor without the switch element and connected in parallel with the integrating circuit resistor via the switch element, wherein the rapid discharge capacitor, the power supply voltage dividing resistor, and the bleeder resistor constitute a CR charging circuit for the rapid discharge capacitor when the power supply circuit is started up and when power is restored.

この構成によれば、電源回路の起動時及び復電時に、急速放電コンデンサの充電を行なうことができ、電源回路の瞬断時及び瞬低時へ、急速放電コンデンサの放電に備えることができる。そして、急速放電コンデンサのCR充電回路と、積分回路コンデンサのCR充電回路を、スイッチ素子の遮断状態下で、独立に設計することができる。 This configuration allows the rapid discharge capacitor to be charged when the power supply circuit is started up and when power is restored, and prepares for the rapid discharge capacitor to discharge in the event of a momentary power interruption or voltage drop in the power supply circuit. Furthermore, the CR charging circuit for the rapid discharge capacitor and the CR charging circuit for the integrator circuit capacitor can be designed independently when the switch element is in the off state.

また、本開示は、前記電源回路の起動時及び復電時に、前記急速放電コンデンサのCR充電が、完了するとともに、前記積分回路コンデンサの端子間電圧が、前記電源回路からの入力電圧*前記電源分圧抵抗/(前記電源分圧抵抗+前記ブリーダ抵抗)と等しくなったときに、前記スイッチ素子は、前記積分回路コンデンサと前記急速放電コンデンサとの間を導通することを特徴とする突入電流防止回路である。 The present disclosure also provides an inrush current prevention circuit in which, upon startup and power recovery of the power supply circuit, CR charging of the rapid discharge capacitor is completed and the terminal voltage of the integrator circuit capacitor becomes equal to the input voltage from the power supply circuit * the power supply voltage dividing resistance / (the power supply voltage dividing resistance + the bleeder resistance), and the switch element establishes conduction between the integrator circuit capacitor and the rapid discharge capacitor.

この構成によれば、電源回路の起動時及び復電時に、電流制限素子の制御電圧の上限を、電源回路からの入力電圧と比べて低く設定することができる。 With this configuration, the upper limit of the control voltage of the current limiting element can be set lower than the input voltage from the power supply circuit when the power supply circuit is started up and when power is restored.

また、本開示は、前記電源回路の起動時及び復電時に、前記急速放電コンデンサ、前記電源分圧抵抗及び前記ブリーダ抵抗から構成されるCR充電回路の時定数は、前記積分回路コンデンサ及び前記積分回路抵抗から構成されるCR充電回路の時定数と比べて小さく設定されることを特徴とする突入電流防止回路である。 The present disclosure also provides an inrush current prevention circuit, characterized in that, when the power supply circuit is started up and when power is restored, the time constant of the CR charging circuit consisting of the rapid discharge capacitor, the power supply voltage dividing resistor, and the bleeder resistor is set to be smaller than the time constant of the CR charging circuit consisting of the integrating circuit capacitor and the integrating circuit resistor.

この構成によれば、電源回路の起動時及び復電時に、電流制限素子の制御電圧を、設定した上限電圧と比べて高くしないようにすることができる。 This configuration ensures that the control voltage of the current limiting element does not become higher than the set upper limit voltage when the power supply circuit is started up or restored to power.

このように、本開示は、電源回路の起動時の突入電流防止機能を先行技術と同等に維持したまま、電源回路の瞬断後又は深い瞬低後の急速な復電時であっても、電流制限素子に印加される電力を起動時と同等以下まで低減することができる。 In this way, the present disclosure can reduce the power applied to the current limiting element to the same level as at startup, even when power is rapidly restored after a momentary power outage or deep voltage drop in the power circuit, while maintaining the same level of inrush current prevention functionality at startup as in the prior art.

第1従来技術の突入電流防止回路の回路構成を示す図である。FIG. 1 is a diagram showing a circuit configuration of a first prior art inrush current prevention circuit. 第1従来技術の突入電流防止回路の回路特性例を示す図である。FIG. 10 is a diagram illustrating an example of circuit characteristics of a first conventional inrush current prevention circuit. 第2従来技術の突入電流防止回路の回路構成を示す図である。FIG. 10 is a diagram showing a circuit configuration of a second prior art inrush current prevention circuit. 第2従来技術の突入電流防止回路の回路特性例を示す図である。FIG. 10 is a diagram illustrating an example of circuit characteristics of a second conventional inrush current prevention circuit. 本開示の突入電流防止回路の回路構成を示す図である。FIG. 1 is a diagram illustrating a circuit configuration of an inrush current prevention circuit according to the present disclosure. 本開示の突入電流防止回路の起動時及び復電時を示す図である。1A and 1B are diagrams illustrating the inrush current prevention circuit of the present disclosure at startup and power recovery. 本開示の突入電流防止回路の瞬断時及び深い瞬低時を示す図である。1A and 1B are diagrams illustrating the inrush current prevention circuit of the present disclosure during an instantaneous interruption and a deep instantaneous sag. 本開示の突入電流防止回路の回路特性例を示す図である。10A and 10B are diagrams illustrating an example of circuit characteristics of an inrush current prevention circuit according to the present disclosure.

添付の図面を参照して本開示の実施形態を説明する。以下に説明する実施形態は本開示の実施の例であり、本開示は以下の実施形態に制限されるものではない。 Embodiments of the present disclosure will be described with reference to the accompanying drawings. The embodiments described below are examples of implementations of the present disclosure, and the present disclosure is not limited to the following embodiments.

(本開示の突入電流防止回路の回路構成)
まず、本開示の突入電流防止回路の回路構成を説明する。本開示の突入電流防止回路の回路構成を図5に示す。突入電流防止回路5は、積分回路抵抗R1、電源分圧抵抗R2、積分回路コンデンサC3、帰還回路抵抗R4、帰還回路コンデンサC5、発振防止抵抗R6、ブリーダ抵抗R7、急速放電コンデンサC8、電流制限素子FET及びスイッチ素子Dを備える。負荷回路2は、一次側コンデンサCLを備える。
(Circuit configuration of the inrush current prevention circuit of the present disclosure)
First, the circuit configuration of the inrush current prevention circuit of the present disclosure will be described. The circuit configuration of the inrush current prevention circuit of the present disclosure is shown in Fig. 5. The inrush current prevention circuit 5 includes an integrating circuit resistor R1, a power supply voltage dividing resistor R2, an integrating circuit capacitor C3, a feedback circuit resistor R4, a feedback circuit capacitor C5, an oscillation prevention resistor R6, a bleeder resistor R7, a rapid discharge capacitor C8, a current limiting element FET, and a switch element D. The load circuit 2 includes a primary-side capacitor CL.

突入電流防止回路5は、電源回路1の起動時及び復電時に、負荷回路2が有する電源回路1側における一次側コンデンサCLへの突入電流を防止する。つまり、電流制限素子FETは、電源ラインに配置され、電源回路1の起動時及び復電時に、制御電圧が徐々に上昇され、一次側コンデンサCLへの突入電流を防止する。そして、積分回路コンデンサC3及び積分回路抵抗R1は、電源回路1と並列に接続され、電源回路1の起動時及び復電時に、電流制限素子FETの制御電圧を徐々に上昇させる。 The inrush current prevention circuit 5 prevents inrush current from flowing to the primary-side capacitor CL on the power supply circuit 1 side of the load circuit 2 when the power supply circuit 1 is started up or restored to power. In other words, the current limiting element FET is located on the power supply line, and when the power supply circuit 1 is started up or restored to power, the control voltage gradually increases, preventing inrush current from flowing to the primary-side capacitor CL. The integrating circuit capacitor C3 and integrating circuit resistor R1 are connected in parallel with the power supply circuit 1, and when the power supply circuit 1 is started up or restored to power, the control voltage of the current limiting element FET gradually increases.

ここで、本実施形態では、電流制限素子FETは、MOSFETであるが、変形例として、バイポーラトランジスタ等であってもよい。そして、本実施形態では、電流制限素子FETは、-IN~-OUTの電源ラインに配置されるが、変形例として、電流制限素子FETは、+IN~+OUTの電源ラインに配置されてもよい。なお、電源回路1がDC出力ではなくAC出力する場合には、突入電流防止回路5の入力端子(+IN端子及び-IN端子)の前段に整流素子(図5に不図示)を挿入すればよい。 In this embodiment, the current limiting element FET is a MOSFET, but as a modification, it may be a bipolar transistor or the like. In this embodiment, the current limiting element FET is placed on the power supply line from -IN to -OUT, but as a modification, the current limiting element FET may be placed on the power supply line from +IN to +OUT. If the power supply circuit 1 outputs AC rather than DC, a rectifying element (not shown in FIG. 5) can be inserted before the input terminals (+IN terminal and -IN terminal) of the inrush current prevention circuit 5.

帰還回路抵抗R4及び帰還回路コンデンサC5は、電源回路1の起動時及び復電時に、一次側コンデンサCLの充電電流を安定化する。発振防止抵抗R6は、電源回路1の起動時及び復電時に、電流制限素子FETの発振を防止する。 Feedback circuit resistor R4 and feedback circuit capacitor C5 stabilize the charging current of primary-side capacitor CL when power supply circuit 1 is started up or restored to power. Oscillation prevention resistor R6 prevents oscillation of the current limiting element FET when power supply circuit 1 is started up or restored to power.

急速放電コンデンサC8は、積分回路コンデンサC3と直列に接続され、積分回路抵抗R1と並列に接続され、電源回路1の瞬断時及び瞬低時に、一次側コンデンサCLの放電に伴って、積分回路コンデンサC3の放電とともに、放電を行なう。 The rapid discharge capacitor C8 is connected in series with the integrator circuit capacitor C3 and in parallel with the integrator circuit resistor R1. When the power supply circuit 1 experiences a momentary interruption or voltage drop, it discharges in conjunction with the discharge of the primary side capacitor CL and the discharge of the integrator circuit capacitor C3.

ここで、積分回路コンデンサC3及び急速放電コンデンサC8から構成される放電回路は、積分回路抵抗R1、電源分圧抵抗R2及びブリーダ抵抗R7をさらに備えるCR放電回路ではなく、CR時定数を伴わずに、一次側コンデンサCLの放電と一体化して、放電を行なうことができる。 Here, the discharge circuit consisting of the integrating circuit capacitor C3 and the rapid discharge capacitor C8 is not a CR discharge circuit further comprising an integrating circuit resistor R1, a power supply voltage dividing resistor R2, and a bleeder resistor R7, and can perform discharge integrally with the discharge of the primary side capacitor CL without a CR time constant.

よって、電源回路1の瞬断時及び深い瞬低時に、電流制限素子FETのゲート電圧を急速にON/OFF閾値電圧Vth以下に下降させることができ、一次側コンデンサCLの残留電圧がより高い時点で突入電流防止回路5を停止することができる。そして、電源回路1のその後の急速な復電時であっても、電流制限素子FETに印加される電力を起動時と同等以下まで低減することができる。 As a result, when the power supply circuit 1 experiences a momentary interruption or deep momentary drop, the gate voltage of the current limiting element FET can be rapidly reduced to below the ON/OFF threshold voltage Vth, and the inrush current prevention circuit 5 can be stopped at a point when the residual voltage of the primary-side capacitor CL is higher. Furthermore, even when the power supply circuit 1 subsequently rapidly recovers, the power applied to the current limiting element FET can be reduced to the same level as at startup or lower.

電源回路1の瞬断時及び深い瞬低時に、積分回路コンデンサC3の電圧降下量が、急速放電コンデンサC8の電圧降下量と比べて大きくなるとともに、電流制限素子FETのゲート電圧が、電流制限素子FETをON状態からOFF状態へと切り替えるタイミングを早めるように、積分回路コンデンサC3の容量が、急速放電コンデンサC8の容量と比べて小さく設定される。 During a momentary interruption or deep voltage drop in the power supply circuit 1, the voltage drop across the integrator circuit capacitor C3 is greater than the voltage drop across the rapid discharge capacitor C8, and the capacitance of the integrator circuit capacitor C3 is set smaller than the capacitance of the rapid discharge capacitor C8 so that the gate voltage of the current limiting element FET accelerates the timing at which the current limiting element FET switches from the ON state to the OFF state.

仮に、積分回路コンデンサC3の容量が、急速放電コンデンサC8の容量と比べて大きく設定されると、電源回路1の瞬断時及び深い瞬低時に、積分回路コンデンサC3の電圧降下量が、急速放電コンデンサC8の電圧降下量と比べて小さくなり、電流制限素子FETのゲート電圧が、電流制限素子FETをON状態からOFF状態へと切り替える時間が長くなる。 If the capacitance of integrator circuit capacitor C3 is set larger than the capacitance of rapid discharge capacitor C8, then during a momentary interruption or deep voltage drop in power supply circuit 1, the amount of voltage drop across integrator circuit capacitor C3 will be smaller than the amount of voltage drop across rapid discharge capacitor C8, and the time it takes for the gate voltage of the current limiting element FET to switch the current limiting element FET from the ON state to the OFF state will be longer.

一方で、本開示では、電源回路1の瞬断時及び深い瞬低時に、電流制限素子FETのゲート電圧を急速にОN/OFF閾値電圧Vth以下により短時間で下降させることができ、一次側コンデンサCLの残留電圧がより高い時点で突入電流防止回路5を停止することができる。たとえ、突入電流防止回路5が停止する直前に電源回路1が復電した時も、電流制限素子FETへの再突入電流の最大値をより低く抑えることができる。 On the other hand, with this disclosure, when the power supply circuit 1 experiences a momentary interruption or deep momentary drop, the gate voltage of the current limiting element FET can be rapidly reduced to below the ON/OFF threshold voltage Vth in a short period of time, and the inrush current prevention circuit 5 can be stopped at a point when the residual voltage of the primary-side capacitor CL is higher. Even if the power supply circuit 1 is restored just before the inrush current prevention circuit 5 is stopped, the maximum value of the re-inrush current to the current limiting element FET can be kept low.

スイッチ素子Dは、積分回路コンデンサC3と急速放電コンデンサC8との間に接続され、電源回路1の起動時及び復電時に、電流制限素子FETのゲート端子及び積分回路コンデンサC3と急速放電コンデンサC8との間を遮断し、電源回路1の瞬断時及び瞬低時に、積分回路コンデンサC3と急速放電コンデンサC8との間を導通する。 Switch element D is connected between integrator circuit capacitor C3 and rapid discharge capacitor C8, and when power supply circuit 1 starts up or is restored, it disconnects the gate terminal of the current limiting element FET and integrator circuit capacitor C3 from rapid discharge capacitor C8, and when power supply circuit 1 experiences a momentary interruption or momentary drop, it connects integrator circuit capacitor C3 to rapid discharge capacitor C8.

仮に、スイッチ素子Dが、電源回路1の起動時及び復電時に、電流制限素子FETのゲート端子及び積分回路コンデンサC3と急速放電コンデンサC8との間を導通すると、積分回路コンデンサC3及び急速放電コンデンサC8の突入電流を防止することができず、同時に電流制限素子FETのゲート電圧を急速に上昇させてしまうため、電流制限素子FETの突入電流の防止機能を維持することができない。 If switch element D conducts current between the gate terminal of the current limiting element FET and between the integrating circuit capacitor C3 and the rapid discharge capacitor C8 when power supply circuit 1 is started up or restored, it will not be possible to prevent inrush currents in the integrating circuit capacitor C3 and the rapid discharge capacitor C8, and at the same time, the gate voltage of the current limiting element FET will rise rapidly, making it impossible to maintain the inrush current prevention function of the current limiting element FET.

一方で、本開示では、電源回路1の起動時及び復電時に、積分回路コンデンサC3及び急速放電コンデンサC8を分離することにより、これらのコンデンサの直列回路への突入電流を防止することができ、同時に電流制限素子FETのゲート電圧を急速に上昇させないため、電流制限素子FETの突入電流の防止機能を維持することができる。そして、上述のように、電源回路1の瞬断時及び深い瞬低時に、電流制限素子FETのゲート電圧を急速にON/OFF閾値電圧Vth以下に下降させることができ、一次側コンデンサCLの残留電圧がより高い時点で突入電流防止回路5を停止することができる。 On the other hand, in the present disclosure, by isolating the integrator circuit capacitor C3 and the rapid discharge capacitor C8 when the power supply circuit 1 is started up or restored to power, it is possible to prevent inrush current into the series circuit of these capacitors, and at the same time, the gate voltage of the current limiting element FET is not rapidly increased, thereby maintaining the inrush current prevention function of the current limiting element FET. Furthermore, as described above, during a momentary interruption or deep momentary sag in the power supply circuit 1, the gate voltage of the current limiting element FET can be rapidly reduced to below the ON/OFF threshold voltage Vth, allowing the inrush current prevention circuit 5 to be stopped at a point when the residual voltage of the primary-side capacitor CL is higher.

電源分圧抵抗R2は、スイッチ素子Dを介さず、急速放電コンデンサC8と直列に接続され、スイッチ素子Dを介して、積分回路コンデンサC3と並列に接続される。ブリーダ抵抗R7は、スイッチ素子Dを介さず、急速放電コンデンサC8と並列に接続され、スイッチ素子Dを介して、積分回路抵抗R1と並列に接続される。 Power supply voltage dividing resistor R2 is connected in series with rapid discharge capacitor C8 without switching element D, and is connected in parallel with integrating circuit capacitor C3 via switching element D. Bleeder resistor R7 is connected in parallel with rapid discharge capacitor C8 without switching element D, and is connected in parallel with integrating circuit resistor R1 via switching element D.

ここで、電源回路1の起動時及び復電時に、急速放電コンデンサC8、電源分圧抵抗R2及びブリーダ抵抗R7は、急速放電コンデンサC8のCR充電回路を構成する。一方で、電源回路1の起動時及び復電時に、積分回路コンデンサC3及び積分回路抵抗R1は、積分回路コンデンサC3のCR充電回路を構成する。そして、電源回路1の起動時及び復電時に、急速放電コンデンサC8のCR充電回路と、積分回路コンデンサC3のCR充電回路は、スイッチ素子Dの遮断状態下で、独立に動作することができる。 Here, when the power supply circuit 1 is started up or restored to power, the rapid discharge capacitor C8, the power supply voltage dividing resistor R2, and the bleeder resistor R7 form a CR charging circuit for the rapid discharge capacitor C8. Meanwhile, when the power supply circuit 1 is started up or restored to power, the integrating circuit capacitor C3 and the integrating circuit resistor R1 form a CR charging circuit for the integrating circuit capacitor C3. And when the power supply circuit 1 is started up or restored to power, the CR charging circuit for the rapid discharge capacitor C8 and the CR charging circuit for the integrating circuit capacitor C3 can operate independently when the switch element D is in the OFF state.

よって、電源回路1の起動時及び復電時に、急速放電コンデンサC8の充電を行なうことができ、電源回路1の瞬断時及び瞬低時へ、急速放電コンデンサC8の放電に備えることができる。そして、急速放電コンデンサC8のCR充電回路と、積分回路コンデンサC3のCR充電回路を、スイッチ素子Dの遮断状態下で、独立に設計することができる。 As a result, rapid discharge capacitor C8 can be charged when power supply circuit 1 is started up or restored, and rapid discharge capacitor C8 can be prepared for discharge in the event of a momentary power outage or voltage drop in power supply circuit 1. Furthermore, the CR charging circuit for rapid discharge capacitor C8 and the CR charging circuit for integrator circuit capacitor C3 can be designed independently when switch element D is in the cut-off state.

電源回路1の起動時及び復電時に、急速放電コンデンサC8のCR充電が、完了するとともに、積分回路コンデンサC3の端子間電圧が、電源回路1からの入力電圧Vin*電源分圧抵抗R2/(電源分圧抵抗R2+ブリーダ抵抗R7)と等しくなったときに、スイッチ素子Dは、積分回路コンデンサC3と急速放電コンデンサC8との間を導通する。そして、ブリーダ抵抗R7及び積分回路抵抗R1が、スイッチ素子Dの導通後に並列接続されたときに、積分回路コンデンサC3の端子間電圧は、電源回路1からの入力電圧Vin*電源分圧抵抗R2/(電源分圧抵抗R2+ブリーダ抵抗R7//積分回路抵抗R1)まで最終的に上昇して安定する(ここで、“//”は、並列接続を示す。)。 When power supply circuit 1 is started up or restored, CR charging of rapid discharge capacitor C8 is completed and the voltage across integrator circuit capacitor C3 becomes equal to input voltage Vin from power supply circuit 1 * power supply voltage divider resistor R2 / (power supply voltage divider resistor R2 + bleeder resistor R7), and switch element D establishes conduction between integrator circuit capacitor C3 and rapid discharge capacitor C8. When bleeder resistor R7 and integrator circuit resistor R1 are connected in parallel after switch element D becomes conductive, the voltage across integrator circuit capacitor C3 eventually rises to input voltage Vin from power supply circuit 1 * power supply voltage divider resistor R2 / (power supply voltage divider resistor R2 + bleeder resistor R7 // integrator circuit resistor R1) and stabilizes (here, "//" indicates a parallel connection).

よって、電源回路1の起動時及び復電時に、電流制限素子FETのゲート電圧の上限(=電源回路1からの入力電圧Vin*電源分圧抵抗R2/(電源分圧抵抗R2+ブリーダ抵抗R7//積分回路抵抗R1))を、電源回路1からの入力電圧と比べて低く設定することができる。 As a result, when power supply circuit 1 is started up and power is restored, the upper limit of the gate voltage of the current limiting element FET (= input voltage Vin from power supply circuit 1 * power supply voltage dividing resistor R2 / (power supply voltage dividing resistor R2 + bleeder resistor R7 // integrator circuit resistor R1)) can be set lower than the input voltage from power supply circuit 1.

電源回路1の起動時及び復電時に、急速放電コンデンサC8、電源分圧抵抗R2及びブリーダ抵抗R7から構成されるCR充電回路の時定数は、積分回路コンデンサC3及び積分回路抵抗R1から構成されるCR充電回路の時定数と比べて小さく設定される。 When power supply circuit 1 is started up or restored to power, the time constant of the CR charging circuit consisting of rapid discharge capacitor C8, power supply voltage dividing resistor R2, and bleeder resistor R7 is set to be smaller than the time constant of the CR charging circuit consisting of integrating circuit capacitor C3 and integrating circuit resistor R1.

よって、電源回路1の起動時及び復電時に、電流制限素子FETのゲート電圧を、設定した上限電圧(=電源回路1からの入力電圧Vin*電源分圧抵抗R2/(電源分圧抵抗R2+ブリーダ抵抗R7//積分回路抵抗R1))と比べて高くしないようにすることができる。 As a result, when the power supply circuit 1 is started up or restored to power, the gate voltage of the current limiting element FET can be prevented from becoming higher than the set upper limit voltage (= input voltage Vin from the power supply circuit 1 * power supply voltage dividing resistor R2 / (power supply voltage dividing resistor R2 + bleeder resistor R7 // integrator circuit resistor R1)).

(本開示の突入電流防止回路の起動時及び復電時)
本開示の突入電流防止回路の回路構成を踏まえて、本開示の突入電流防止回路が停止している状態からの起動時及び復電時を図6に示す。図6の上段では、突入電流防止回路5が停止している状態からの起動初期及び復電初期を示す。図6の下段では、突入電流防止回路5が停止している状態からの起動終期及び復電終期を示す。
(When the inrush current prevention circuit of the present disclosure is started up and when power is restored)
Taking into account the circuit configuration of the inrush current prevention circuit of the present disclosure, Fig. 6 shows the start-up and power restoration from a stopped state of the inrush current prevention circuit of the present disclosure. The upper part of Fig. 6 shows the initial start-up and power restoration from a stopped state of the inrush current prevention circuit 5. The lower part of Fig. 6 shows the final start-up and power restoration from a stopped state of the inrush current prevention circuit 5.

まず、突入電流防止回路5が停止している状態からの起動初期及び復電初期を説明する。電源分圧抵抗R2の端子間電圧VR2は、電源回路1からの入力電圧Vinと等しく、積分回路コンデンサC3の端子間電圧VGS(=電流制限素子FETのゲート電圧)は、0又はON/OFF閾値電圧Vth以下である。電流制限素子FETは、OFF状態に設定され、スイッチ素子Dは、積分回路コンデンサC3と急速放電コンデンサC8との間を遮断する。一次側コンデンサCLの端子間電圧は、0又は残留電圧Vresである。 First, we will explain the initial startup and power recovery periods from a stopped state of the inrush current prevention circuit 5. The voltage VR2 across the power supply voltage divider resistor R2 is equal to the input voltage Vin from the power supply circuit 1, and the voltage VGS across the integrator circuit capacitor C3 (= the gate voltage of the current limiting element FET) is 0 or below the ON/OFF threshold voltage Vth. The current limiting element FET is set to the OFF state, and the switch element D cuts off communication between the integrator circuit capacitor C3 and the rapid discharge capacitor C8. The voltage across the primary side capacitor CL is 0 or a residual voltage Vres.

一次側コンデンサCL及び負荷回路2から構成されるCR充電回路は、時定数CL*Rinで一次側コンデンサCLを充電する。ここで、Rinは、電源回路1の内部抵抗と電流制限素子FETのRоnとの和である。急速放電コンデンサC8、電源分圧抵抗R2及びブリーダ抵抗R7から構成されるCR充電回路は、時定数C8*(R2//R7)で急速放電コンデンサC8を充電する。積分回路コンデンサC3及び積分回路抵抗R1から構成されるCR充電回路は、時定数C3*R1で積分回路コンデンサC3を充電する。 The CR charging circuit, consisting of the primary-side capacitor CL and load circuit 2, charges the primary-side capacitor CL with a time constant of CL * Rin. Here, Rin is the sum of the internal resistance of the power supply circuit 1 and the Ron of the current limiting element FET. The CR charging circuit, consisting of the rapid discharge capacitor C8, power supply voltage dividing resistor R2, and bleeder resistor R7, charges the rapid discharge capacitor C8 with a time constant of C8 * (R2//R7). The CR charging circuit, consisting of the integrating circuit capacitor C3 and integrating circuit resistor R1, charges the integrating circuit capacitor C3 with a time constant of C3 * R1.

次に、突入電流防止回路5が停止している状態からの起動終期及び復電終期を説明する。始めに、電源分圧抵抗R2の端子間電圧VR2は、電源回路1からの入力電圧Vin*電源分圧抵抗R2/(電源分圧抵抗R2+ブリーダ抵抗R7)と等しくなり、その後に、積分回路コンデンサC3の端子間電圧VGS(=電流制限素子FETのゲート電圧)は、電源分圧抵抗R2の端子間電圧VR2と等しくなる。電流制限素子FETは、ON状態に切り替えられ、スイッチ素子Dは、積分回路コンデンサC3と急速放電コンデンサC8との間を導通する。一次側コンデンサCLの端子間電圧は、電源回路1からの入力電圧Vinと等しくなる。 Next, we will explain the final stages of startup and power recovery from a state in which the inrush current prevention circuit 5 is stopped. Initially, the voltage VR2 across the power supply voltage divider resistor R2 becomes equal to the input voltage Vin from the power supply circuit 1 * power supply voltage divider resistor R2 / (power supply voltage divider resistor R2 + bleeder resistor R7). After that, the voltage VGS across the integrator circuit capacitor C3 (= gate voltage of the current limiting element FET) becomes equal to the voltage VR2 across the power supply voltage divider resistor R2. The current limiting element FET is switched ON, and the switch element D conducts current between the integrator circuit capacitor C3 and the rapid discharge capacitor C8. The voltage across the primary-side capacitor CL becomes equal to the input voltage Vin from the power supply circuit 1.

(本開示の突入電流防止回路の瞬断時及び深い瞬低時)
本開示の突入電流防止回路の回路構成を踏まえて、本開示の突入電流防止回路が定常である状態からの瞬断時及び深い瞬低時を図7に示す。図7の上段では、突入電流防止回路5が定常である状態からの瞬断初期及び深い瞬低初期を示す。図7の下段では、突入電流防止回路5が定常である状態からの瞬断終期及び深い瞬低終期を示す。
(Inrush current prevention circuit of the present disclosure during momentary interruption and deep momentary sag)
Taking into account the circuit configuration of the inrush current prevention circuit of the present disclosure, Fig. 7 shows the time of an instantaneous interruption and a deep instantaneous sag when the inrush current prevention circuit of the present disclosure is in a steady state. The upper part of Fig. 7 shows the beginning of an instantaneous interruption and an early part of a deep instantaneous sag when the inrush current prevention circuit 5 is in a steady state. The lower part of Fig. 7 shows the end of an instantaneous interruption and an end of a deep instantaneous sag when the inrush current prevention circuit 5 is in a steady state.

まず、突入電流防止回路5が定常である状態からの瞬断初期及び深い瞬低初期を説明する。引き続き、電源分圧抵抗R2の端子間電圧VR2は、電源回路1からの定常時の入力電圧Vin*電源分圧抵抗R2/(電源分圧抵抗R2+ブリーダ抵抗R7//積分回路抵抗R1)と等しいままであり、そして、積分回路コンデンサC3の端子間電圧VGS(=電流制限素子FETのゲート電圧)は、定常時の電源分圧抵抗R2の端子間電圧VR2と等しいままである。電流制限素子FETは、ON状態に維持され、スイッチ素子Dは、積分回路コンデンサC3と急速放電コンデンサC8との間を導通する。一次側コンデンサCLの端子間電圧は、電源回路1からの定常時の入力電圧Vinと等しい。 First, we will explain the initial stage of a momentary interruption and the initial stage of a deep momentary sag when the inrush current prevention circuit 5 is in a steady state. The voltage VR2 across the power supply voltage divider resistor R2 remains equal to the steady-state input voltage Vin from the power supply circuit 1 * power supply voltage divider resistor R2 / (power supply voltage divider resistor R2 + bleeder resistor R7 // integrator circuit resistor R1), and the voltage VGS across the integrator circuit capacitor C3 (= gate voltage of the current limiting element FET) remains equal to the steady-state voltage VR2 across the power supply voltage divider resistor R2. The current limiting element FET remains ON, and the switch element D conducts current between the integrator circuit capacitor C3 and the rapid discharge capacitor C8. The voltage across the primary-side capacitor CL is equal to the steady-state input voltage Vin from the power supply circuit 1.

一次側コンデンサCL及び負荷回路2の等価抵抗RLから構成されるCR放電回路は、時定数CL*RLで一次側コンデンサCLを放電する。積分回路コンデンサC3及び急速放電コンデンサC8から構成される放電回路は、一次側コンデンサCLの放電に伴って、CR時定数を伴わずに、一次側コンデンサCLの放電と一体化して、積分回路コンデンサC3及び急速放電コンデンサC8を放電する。積分回路コンデンサC3の電圧降下量(=一次側コンデンサCLの電圧降下量のC8/(C3+C8)倍、ここで、C8>C3)は、急速放電コンデンサC8の電圧降下量(=一次側コンデンサCLの電圧降下量のC3/(C3+C8)倍、ここで、C3<C8)と比べて大きい。 The CR discharge circuit, consisting of the primary-side capacitor CL and the equivalent resistance RL of the load circuit 2, discharges the primary-side capacitor CL with a time constant CL * RL. The discharge circuit, consisting of the integrating circuit capacitor C3 and the rapid discharge capacitor C8, discharges the integrating circuit capacitor C3 and the rapid discharge capacitor C8 in conjunction with the discharge of the primary-side capacitor CL, without a CR time constant. The voltage drop across the integrating circuit capacitor C3 (= C8/(C3 + C8) times the voltage drop across the primary-side capacitor CL, where C8 > C3) is greater than the voltage drop across the rapid discharge capacitor C8 (= C3/(C3 + C8) times the voltage drop across the primary-side capacitor CL, where C3 < C8).

次に、突入電流防止回路5が定常である状態からの瞬断終期及び深い瞬低終期を説明する。始めに、積分回路コンデンサC3の端子間電圧VGS(=電流制限素子FETのゲート電圧)は、電流制限素子FETのON/OFF閾値電圧Vthと等しくなり、そして、電源分圧抵抗R2の端子間電圧VR2は、積分回路コンデンサC3の端子間電圧VGSと等しくなる。電流制限素子FETは、OFF状態に切り替えられ、スイッチ素子Dは、積分回路コンデンサC3と急速放電コンデンサC8との間を導通する。一次側コンデンサCLの端子間電圧は、十分な大きさの残留電圧Vresを残している。その後も、積分回路コンデンサC3及び電源分圧抵抗R2から構成されるCR放電回路は、時定数C3*R2で積分回路コンデンサC3を追加的に放電し、急速放電コンデンサC8及びブリーダ抵抗R7から構成されるCR放電回路は、時定数C8*R7で急速放電コンデンサC8を追加的に放電する。 Next, we will explain the end of a momentary interruption and a deep momentary sag from a steady state of the inrush current prevention circuit 5. First, the terminal voltage VGS of the integrator capacitor C3 (= the gate voltage of the current limiting element FET) becomes equal to the ON/OFF threshold voltage Vth of the current limiting element FET, and the terminal voltage VR2 of the power supply voltage dividing resistor R2 becomes equal to the terminal voltage VGS of the integrator capacitor C3. The current limiting element FET is switched to the OFF state, and the switch element D conducts current between the integrator capacitor C3 and the rapid discharge capacitor C8. A sufficient residual voltage Vres remains in the terminal voltage of the primary-side capacitor CL. Thereafter, the CR discharge circuit consisting of the integrator circuit capacitor C3 and the power supply voltage divider resistor R2 additionally discharges the integrator circuit capacitor C3 with a time constant of C3 * R2, and the CR discharge circuit consisting of the rapid discharge capacitor C8 and the bleeder resistor R7 additionally discharges the rapid discharge capacitor C8 with a time constant of C8 * R7.

(本開示の突入電流防止回路の回路特性例)
本開示の突入電流防止回路の回路構成を踏まえて、本開示の突入電流防止回路の回路特性例を図8に示す。図8では、電源回路1からの入力電圧VinはDC48Vであり、負荷回路2の等価抵抗RLは48Ωであり、負荷回路2の等価抵抗RLの電流ILは1Aであり、一次側コンデンサCLは100μFであり、電流制限素子FETのゲートON/ОFF閾値電圧Vthは2Vであり、電流制限素子FETのゲート上限電圧VGSmaxは12Vである。突入電流防止回路5の回路定数は、以下のように設定される。
(Example of circuit characteristics of the inrush current prevention circuit of the present disclosure)
Taking into account the circuit configuration of the inrush current prevention circuit of the present disclosure, an example of circuit characteristics of the inrush current prevention circuit of the present disclosure is shown in Fig. 8. In Fig. 8, the input voltage Vin from the power supply circuit 1 is DC 48 V, the equivalent resistance RL of the load circuit 2 is 48 Ω, the current IL of the equivalent resistance RL of the load circuit 2 is 1 A, the primary-side capacitor CL is 100 µF, the gate ON/OFF threshold voltage Vth of the current limiting element FET is 2 V, and the gate upper limit voltage VGSmax of the current limiting element FET is 12 V. The circuit constants of the inrush current prevention circuit 5 are set as follows:

積分回路抵抗R1は、電源回路1の安定時に、電流制限素子FETのゲート漏れ電流Igssと比べて十分に大きい電流を流す必要がある:(Vin-VGS)/R1>>Igss。電源分圧抵抗R2は、電源回路1の安定時に、積分回路抵抗R1に流れる電流と比べて十分に大きい電流を流す必要がある:VGS/R2>>(Vin-VGS)/R1。積分回路コンデンサC3は、電源回路1の起動時のチャタリング期間と、電源回路1からの入力電圧Vinの安定化期間と、のうちのいずれか長い方の期間をT3とし、電流制限素子FETの起動遅延期間に設定する必要がある:C3*R1*Vth/Vin=T3。 The integrator circuit resistor R1 must pass a current that is sufficiently larger than the gate leakage current Igss of the current limiting element FET when the power supply circuit 1 is stable: (Vin - VGS)/R1 >> Igss. The power supply voltage divider resistor R2 must pass a current that is sufficiently larger than the current flowing through the integrator circuit resistor R1 when the power supply circuit 1 is stable: VGS/R2 >> (Vin - VGS)/R1. The integrator circuit capacitor C3 must be set to the startup delay period of the current limiting element FET, where T3 is the longer of the chattering period when the power supply circuit 1 starts up or the stabilization period of the input voltage Vin from the power supply circuit 1: C3 * R1 * Vth/Vin = T3.

積分回路抵抗R1、電源分圧抵抗R2及び積分回路コンデンサC3を設定したうえで、本開示の突入電流防止回路の回路構成で説明したように、C3<C8、Vin*R2/(R2+R7//R1)=VGS、Vth<VGS<VGSmax、C8*(R2//R7)<C3*R1を満たすように、突入電流防止回路5の回路定数を設定する必要がある。 After setting the integrator circuit resistor R1, power supply voltage dividing resistor R2, and integrator circuit capacitor C3, the circuit constants of the inrush current prevention circuit 5 must be set to satisfy the following conditions, as explained in the circuit configuration of the inrush current prevention circuit disclosed herein: C3 < C8, Vin * R2 / (R2 + R7 // R1) = VGS, Vth < VGS < VGSmax, C8 * (R2 // R7) < C3 * R1.

図8の左欄では、電源分圧抵抗R2の端子間電圧は、電源回路1の起動直後に、電源回路1からの入力電圧48Vと等しく、電源回路1の起動後100msに、安定状態に到達する。電流制限素子FETのゲート電圧は、電源回路1の起動後2msに、電流制限素子FETのON/OFF閾値電圧Vth=2Vに到達し、電源回路1の起動後100msに、安定状態に到達する。電源回路1の起動時に、電流制限素子FETの消費電力は、電源回路1の起動後10msで26Wとなり、電流制限素子FETの蓄積熱量は、電源回路1の起動後20msで340mJとなる。電源回路1の起動時に、電流制限素子FETのこれらの特性は、電流制限素子FETの許容損失に換算すると6Wに相当する。 In the left column of Figure 8, the voltage across power supply voltage divider resistor R2 is equal to the 48V input voltage from power supply circuit 1 immediately after power supply circuit 1 is started, and reaches a stable state 100 ms after power supply circuit 1 is started. The gate voltage of the current limiting element FET reaches the ON/OFF threshold voltage Vth = 2V of the current limiting element FET 2 ms after power supply circuit 1 is started, and reaches a stable state 100 ms after power supply circuit 1 is started. When power supply circuit 1 is started, the power consumption of the current limiting element FET is 26 W 10 ms after power supply circuit 1 is started, and the accumulated heat of the current limiting element FET is 340 mJ 20 ms after power supply circuit 1 is started. When power supply circuit 1 is started, these characteristics of the current limiting element FET are equivalent to an allowable loss of 6 W.

図8の中欄の第1段では、電流制限素子FETのゲート電圧は、電源回路1の瞬断後及び深い瞬低後2msに、ON/OFF閾値電圧Vth=2Vまで下降する。図8の中欄の第2段では、一次側コンデンサCLの端子間電圧は、電源回路1の瞬断後及び深い瞬低後2msに、残留電圧として32Vと十分高い電圧が残留している。電流制限素子FETがぎりぎりのON状態で、電源回路1の復電状態に戻るとする。 In the first stage in the middle column of Figure 8, the gate voltage of the current limiting element FET drops to the ON/OFF threshold voltage Vth = 2V 2ms after the power supply circuit 1 experiences a momentary interruption and a deep momentary drop. In the second stage in the middle column of Figure 8, the terminal voltage of the primary-side capacitor CL remains at a sufficiently high residual voltage of 32V 2ms after the power supply circuit 1 experiences a momentary interruption and a deep momentary drop. Assume that the power supply circuit 1 returns to its power-restored state with the current limiting element FET in the barely ON state.

図8の右欄の第1段では、電流制限素子FETのドレイン電流は、電源回路1の復電後直ちに、再突入電流として30Aに抑えられる。図8の右欄の第2段では、電流制限素子FETの消費電力は、電源回路1の復電後20μsまでに、最大電力であっても0.3kWに抑えられる。図8の右欄の第3段では、電流制限素子FETの蓄積熱量は、電源回路1の復電後20μsに、4.3mJに抑えられる。よって、電源回路1の急速な復電時に、電流制限素子FETのこれらの特性は、電流制限素子FETの許容損失に換算すると3Wに相当し、電源回路1の起動時と比較して、小さな電流制限素子FETの許容損失に相当する。すると、電流制限素子FETとして、電源回路1の起動時における電流制限素子FETの許容損失のみを考慮した、小型の品種であってもよくなる。 In the first row in the right column of Figure 8, the drain current of the current limiter FET is limited to 30 A as a re-inrush current immediately after power is restored to the power supply circuit 1. In the second row in the right column of Figure 8, the power consumption of the current limiter FET is limited to 0.3 kW at maximum within 20 μs after power is restored to the power supply circuit 1. In the third row in the right column of Figure 8, the amount of accumulated heat in the current limiter FET is limited to 4.3 mJ within 20 μs after power is restored to the power supply circuit 1. Therefore, when power is rapidly restored to the power supply circuit 1, these characteristics of the current limiter FET are converted into an allowable loss of 3 W, which is smaller than the allowable loss of the current limiter FET when the power supply circuit 1 is started up. This means that a small current limiter FET may be used, taking into account only the allowable loss of the current limiter FET when the power supply circuit 1 is started up.

本開示の突入電流防止回路は、AC電源又はDC電源に接続して動作させる機器の内部回路(当該機器の使用用途は特定用途に限定されない。)に対して、AC電源又はDC電源を供給するにあたり、電流制限素子に起動時に印加される電力に対して、電流制限素子に瞬断時又は深い瞬低時に印加される電力を同等以下にすることができる。 The inrush current prevention circuit disclosed herein can ensure that the power applied to the current limiting element during a momentary interruption or deep sag is equal to or less than the power applied to the current limiting element during startup when AC or DC power is supplied to the internal circuitry of a device that is connected to an AC or DC power source and operates (the device's use is not limited to any specific application).

1:電源回路
2:負荷回路
3、4、5:突入電流防止回路
R1:積分回路抵抗
D1:クランプ素子
R2:電源分圧抵抗
D2:スイッチ素子
C3:積分回路コンデンサ
R4:帰還回路抵抗
C5:帰還回路コンデンサ
R6:発振防止抵抗
R7:ブリーダ抵抗
C8:急速放電コンデンサ
R9:急速放電抵抗
FET:電流制限素子
TR:トランジスタ
D:スイッチ素子
CL:一次側コンデンサ
1: Power supply circuit 2: Load circuit 3, 4, 5: Inrush current prevention circuit R1: Integration circuit resistor D1: Clamp element R2: Power supply voltage dividing resistor D2: Switch element C3: Integration circuit capacitor R4: Feedback circuit resistor C5: Feedback circuit capacitor R6: Oscillation prevention resistor R7: Bleeder resistor C8: Rapid discharge capacitor R9: Rapid discharge resistor FET: Current limiting element TR: Transistor D: Switch element CL: Primary side capacitor

Claims (5)

電源回路の起動時及び復電時に、負荷回路が有する前記電源回路側における一次側コンデンサへの突入電流を防止する突入電流防止回路であって、
電源ラインに配置され、前記電源回路の起動時及び復電時に、制御電圧が徐々に上昇され、前記一次側コンデンサへの突入電流を防止する電流制限素子と、
前記電源回路と並列に接続され、前記電源回路の起動時及び復電時に、前記電流制限素子の制御電圧を徐々に上昇させる積分回路コンデンサ及び積分回路抵抗と、
前記積分回路コンデンサと直列に接続され、前記積分回路抵抗と並列に接続され、前記電源回路の瞬断時及び瞬低時に、前記一次側コンデンサの放電に伴って、前記積分回路コンデンサの放電とともに、放電を行なう急速放電コンデンサと、を備え
前記電源回路の瞬断時及び深い瞬低時に、前記積分回路コンデンサの電圧降下量が、前記急速放電コンデンサの電圧降下量と比べて大きくなるとともに、前記電流制限素子の制御電圧が、前記電流制限素子をオン状態からオフ状態へと切り替えるタイミングを早めるように、前記積分回路コンデンサの容量が、前記急速放電コンデンサの容量と比べて小さく設定されることを特徴とする突入電流防止回路。
An inrush current prevention circuit that prevents an inrush current from flowing into a primary-side capacitor on a power supply circuit side of a load circuit when the power supply circuit is started up or restored to power,
a current limiting element disposed on a power supply line, the control voltage of which gradually increases when the power supply circuit is started up and when power is restored, thereby preventing an inrush current from flowing into the primary-side capacitor;
an integrating circuit capacitor and an integrating circuit resistor connected in parallel with the power supply circuit, which gradually increase the control voltage of the current limiting element when the power supply circuit is started up and when power is restored;
a rapid discharge capacitor connected in series with the integrating circuit capacitor and in parallel with the integrating circuit resistor, which discharges together with the integrating circuit capacitor in response to the discharge of the primary side capacitor when the power supply circuit is momentarily interrupted or drops ,
In an inrush current prevention circuit, the capacitance of the integrating circuit capacitor is set smaller than the capacitance of the rapid discharge capacitor so that, during an instantaneous interruption or deep instantaneous drop of the power supply circuit, the voltage drop of the integrating circuit capacitor becomes larger than the voltage drop of the rapid discharge capacitor, and the control voltage of the current limiting element accelerates the timing at which the current limiting element switches from an on state to an off state .
前記積分回路コンデンサと前記急速放電コンデンサとの間に接続され、前記電源回路の起動時及び復電時に、前記電流制限素子の制御端子及び前記積分回路コンデンサと前記急速放電コンデンサとの間を遮断し、前記電源回路の瞬断時及び瞬低時に、前記積分回路コンデンサと前記急速放電コンデンサとの間を導通するスイッチ素子をさらに備える
ことを特徴とする、請求項に記載の突入電流防止回路。
2. The inrush current prevention circuit according to claim 1, further comprising a switch element connected between the integrating circuit capacitor and the rapid discharge capacitor, which disconnects the control terminal of the current limiting element and the integrating circuit capacitor from the rapid discharge capacitor when the power supply circuit is started up or restored to power, and which connects the integrating circuit capacitor to the rapid discharge capacitor when the power supply circuit is momentarily interrupted or dips.
前記スイッチ素子を介さず前記急速放電コンデンサと直列に接続され、前記スイッチ素子を介して前記積分回路コンデンサと並列に接続される電源分圧抵抗と、
前記スイッチ素子を介さず前記急速放電コンデンサと並列に接続され、前記スイッチ素子を介して前記積分回路抵抗と並列に接続されるブリーダ抵抗と、をさらに備え、
前記電源回路の起動時及び復電時に、前記急速放電コンデンサ、前記電源分圧抵抗及び前記ブリーダ抵抗は、前記急速放電コンデンサのCR充電回路を構成する
ことを特徴とする、請求項に記載の突入電流防止回路。
a power supply voltage dividing resistor connected in series with the rapid discharge capacitor without passing through the switch element and connected in parallel with the integrating circuit capacitor via the switch element;
a bleeder resistor connected in parallel to the rapid discharge capacitor without the switch element and connected in parallel to the integrating circuit resistor via the switch element;
3. The inrush current prevention circuit according to claim 2 , wherein the rapid discharge capacitor, the power supply voltage dividing resistor, and the bleeder resistor form a CR charging circuit for the rapid discharge capacitor when the power supply circuit is started up and when power is restored.
前記電源回路の起動時及び復電時に、前記急速放電コンデンサのCR充電が、完了するとともに、前記積分回路コンデンサの端子間電圧が、前記電源回路からの入力電圧*前記電源分圧抵抗/(前記電源分圧抵抗+前記ブリーダ抵抗)と等しくなったときに、前記スイッチ素子は、前記積分回路コンデンサと前記急速放電コンデンサとの間を導通する
ことを特徴とする、請求項に記載の突入電流防止回路。
4. The inrush current prevention circuit according to claim 3, wherein, when the power supply circuit is started up or when power is restored, CR charging of the rapid discharge capacitor is completed and the voltage across the integrating circuit capacitor becomes equal to (input voltage from the power supply circuit*the power supply voltage dividing resistance)/(the power supply voltage dividing resistance+the bleeder resistance), the switch element establishes conduction between the integrating circuit capacitor and the rapid discharge capacitor.
前記電源回路の起動時及び復電時に、前記急速放電コンデンサ、前記電源分圧抵抗及び前記ブリーダ抵抗から構成されるCR充電回路の時定数は、前記積分回路コンデンサ及び前記積分回路抵抗から構成されるCR充電回路の時定数と比べて小さく設定される
ことを特徴とする、請求項又はに記載の突入電流防止回路。
5. The inrush current prevention circuit according to claim 3, wherein, at the time of startup and power recovery of the power supply circuit, a time constant of a CR charging circuit constituted by the rapid discharge capacitor, the power supply voltage dividing resistor, and the bleeder resistor is set to be smaller than a time constant of a CR charging circuit constituted by the integrating circuit capacitor and the integrating circuit resistor.
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