JP7742765B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

The present invention relates to a plasma processing apparatus and a plasma processing method, and in particular to technology suitable for use in CVD film formation, etc.

Plasma processing apparatuses that use plasma to decompose a source gas and, for example, form a thin film on the surface of a substrate to be deposited have been known for some time. In these plasma processing apparatuses, as shown in Patent Documents 1 to 4, for example, a processing chamber is made up of a chamber, an electrode flange, and an insulating flange sandwiched between the chamber and the electrode flange. The processing chamber has a film deposition space (reaction chamber).

The processing chamber is provided with a shower plate as an electrode and a substrate heater (substrate support) on which a substrate is placed. The chamber is connected to a ground potential, so that the substrate heater functions as an anode electrode.
A frame-shaped substrate mask is provided to prevent unnecessary film deposition on the peripheral edge of the substrate and on substrate heaters where no substrate is placed. The substrate mask holds down the peripheral edge of the substrate during film deposition. The substrate mask prevents the film from spreading onto the edge and back surfaces of the substrate. At the same time, the substrate mask confines plasma between the substrate and the shower plate.

The substrate mask portion is in contact with the substrate heater and the substrate during film formation, and is heated to the same degree as the substrate by the substrate heater, which is a heat source.
The substrate mask portion is located on the shower plate side of the substrate periphery, and therefore needs to be moved away from the heater when the substrate is transported, at which time the temperature of the substrate mask portion drops.

Japanese Patent Application Publication No. 06-002136 Japanese Patent Application Laid-Open No. 2006-089793 Japanese Patent Application Laid-Open No. 2007-081404 Japanese Patent Application Laid-Open No. 2006-274316

However, there is a problem in that particles generated in the chamber affect the film formation characteristics and yield.
It is known that one of the major causes of particles during film formation is that a film deposited on a mask portion of a substrate falls onto the substrate when the substrate is transported.
Thus, there is a problem in that particles generated from the mask portion of the substrate affect the film formation characteristics and yield.

Particles on the substrate mask portion occur when the substrate mask temperature drops significantly when the substrate is carried in. At that time, the film formed on the substrate mask portion is subjected to stress due to the difference in thermal expansion coefficient between the substrate mask portion and the film, causing it to peel off from the substrate mask portion. The inventors of the present application have determined that this is the main cause of particles generated from the substrate mask portion.
Therefore, it was found that a major challenge was how to maintain the temperature of the substrate mask portion at a constant level so that film formation could be repeated in order to suppress particles from the substrate mask portion.

The inventors of the present invention have also discovered that the film formed on the substrate mask during pre-deposition is the main cause of particles generated from the substrate mask.
Therefore, the inventors of the present application have discovered that by preventing the film formed during pre-deposition from peeling off from the substrate mask before film formation is completed, it is possible to avoid degradation of film properties due to particles.
The pre-deposition refers to a process of generating plasma without placing the substrate on the substrate heater to set the chamber in a film-forming state before the deposition process in which the substrate is carried in and a film is formed.

The present invention has been made in view of the above circumstances, and aims to achieve the following objects.
1. To reduce particles generated from the substrate mask area.
2. Suppression of temperature changes in the substrate mask area.

The plasma processing apparatus of the present invention comprises:
A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the outer periphery of the substrate and the substrate heater portion relative to the electrode portion; and a mask support portion that is provided around the chamber and supports the substrate mask portion when the substrate heater portion is lowered.
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
the mask heating unit is a heater disposed on the mask support unit along the outer periphery of the substrate mask unit,
the mask support has a thermal insulator disposed at a base adjacent a wall of the chamber;
The above problem was solved by making it possible for the mask heating section to heat the substrate mask section when the substrate heater section descends and the substrate mask section supported by the mask support section moves away from the substrate heater section .
The plasma processing apparatus of the present invention comprises:
The mask heating portion may be a heater embedded in the tip of the mask support portion with which the substrate mask portion comes into contact.
The plasma processing apparatus of the present invention comprises:
The tip of the mask support portion may be located radially outward from the outer periphery of the substrate heater portion in plan view.
The plasma processing apparatus of the present invention comprises:
A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the outer periphery of the substrate and the substrate heater portion relative to the electrode portion; and a mask support portion that is provided around the chamber and supports the substrate mask portion when the substrate heater portion is lowered.
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
the mask heating unit is a heater disposed on the substrate mask unit along the outer periphery of the substrate mask unit,
Contacts for energizing the heater of the mask heating unit are disposed on the lower surface of the substrate mask unit and on the upper surface of the mask support unit.
This solved the above problem.
The plasma processing apparatus of the present invention comprises:
The heater of the mask heating unit may be disposed so as to extend over the entire periphery of the substrate mask unit.
The plasma processing apparatus of the present invention comprises:
The heater of the mask heating unit is provided at a position close to the inner periphery of the substrate mask unit (at a position not in contact with the mask support unit, the substrate, or
It is possible.
The plasma processing apparatus of the present invention comprises:
A plurality of heaters may be arranged concentrically around the outer periphery of the substrate mask portion .
The plasma processing apparatus of the present invention comprises:
The contacts may project downwardly from a lower surface of the substrate mask portion.
The plasma processing apparatus of the present invention comprises:
The contacts may protrude upward from an upper surface of the mask support portion.
The plasma processing apparatus of the present invention comprises:
The outer periphery of the substrate mask portion can be located radially outward from the tip end of the mask support portion in plan view.
The plasma processing apparatus of the present invention comprises:
A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the outer periphery of the substrate and the substrate heater portion relative to the electrode portion; and a mask support portion that is provided around the chamber and supports the substrate mask portion when the substrate heater portion is lowered.
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
when the substrate heater unit is lowered and the substrate mask unit supported by the mask support unit is separated from the substrate heater unit, the substrate mask unit can be heated by the mask heating unit,
a temperature detection unit for detecting the temperature of the substrate mask unit;
This solved the above problem.
The plasma processing apparatus of the present invention comprises:
The temperature detection unit can detect the temperature of the lower surface of the substrate mask unit.
The plasma processing method of the present invention includes:
A plasma processing method for performing plasma processing in any one of the plasma processing apparatuses described above, comprising:
When the substrate mask part is placed on the substrate heater part, the substrate mask part is heated by the substrate heater part;
When the substrate mask section is spaced apart from the substrate heater section, the substrate mask section can be heated by the mask heating section.

The plasma processing apparatus of the present invention comprises:
A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the substrate and an outer periphery of the substrate heater portion from the electrode portion;
a mask support portion provided around the chamber and supporting the substrate mask portion when the substrate heater portion is lowered;
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
When the substrate heater section is lowered and the substrate mask section supported by the mask support section is separated from the substrate heater section, the substrate mask section can be heated by the mask heating section.
As a result, when the substrate heater unit is raised and the substrate mask unit is placed on the substrate heater unit, the substrate heater unit heats the substrate mask unit, or when the substrate mask unit is heated by plasma, the substrate mask unit and the substrate heater unit reach the same temperature. Furthermore, when the substrate heater unit is lowered and the substrate mask unit is separated from the substrate heater unit, the mask heater unit heats the substrate mask unit, thereby maintaining the substrate mask unit at approximately the same temperature as when heated by the substrate heater unit and preventing a decrease in the temperature of the substrate mask unit. This prevents a film formed on the substrate mask unit by pre-deposition or the like from peeling off due to temperature differences and becoming particles. Therefore, the amount of particles generated in the chamber can be reduced, preventing the film formation characteristics from being affected.

The plasma processing apparatus of the present invention comprises:
The mask heating section is a heater disposed on the mask support section along the outer periphery of the substrate mask section.
As a result, when the mask heating unit raises the temperature of the mask support unit, the substrate heater unit descends, and the substrate mask unit is separated from the substrate heater unit, the mask support unit heats the substrate mask unit, thereby maintaining the substrate mask unit at approximately the same temperature as when heated by the substrate heater unit, and preventing the temperature of the substrate mask unit from decreasing. This prevents a film formed on the substrate mask unit by pre-deposition or the like from peeling off due to temperature differences and becoming particles. Therefore, the amount of particles generated in the chamber can be suppressed, preventing them from affecting film formation characteristics.

The plasma processing apparatus of the present invention comprises:
The mask support has a thermal insulator disposed at its base adjacent the chamber wall.
This prevents heat from flowing from the base of the mask support part to the chamber wall part when the mask heating part raises the temperature of the mask support part, resulting in an insufficient temperature rise of the mask support part. The mask heating part can efficiently heat the mask support part. This can prevent the temperature of the substrate mask part from decreasing. This can prevent a film formed on the substrate mask part by pre-deposition or the like from peeling off due to temperature differences and becoming particles. Therefore, the amount of particles generated in the chamber can be suppressed, preventing an effect on film formation characteristics.

The plasma processing apparatus of the present invention comprises:
The mask heating portion is a heater embedded in the tip of the mask support portion with which the substrate mask portion comes into contact.
This allows the tip of the mask support portion to be heated, thereby efficiently heating the substrate mask portion that contacts the tip of the mask support portion. This prevents the temperature of the substrate mask portion from decreasing. This prevents a film formed on the substrate mask portion by pre-deposition or the like from peeling off due to temperature differences and becoming particles. This reduces the amount of particles generated in the chamber, preventing them from affecting film formation characteristics.

The plasma processing apparatus of the present invention comprises:
The tip of the mask support portion is located radially outward from the outer periphery of the substrate heater portion in a plan view.
This allows the tip of the mask support part, which is located radially inward in the chamber, to remain out of contact with the outer periphery of the substrate heater part. A gas flow can be maintained between the tip of the mask support part and the outer periphery of the substrate heater part, flowing from the film formation part toward a position below the substrate heater part. This allows gas to be exhausted from the film formation part (plasma formation space) between the substrate heater part and the electrode part, enabling plasma CVD processing.
At the same time, when the substrate heater section is lowered, the substrate mask section, which is placed in a state where it protrudes radially outward from the outer periphery of the substrate heater section, can be placed on the tip of the mask support section at a radially outer position of the substrate heater section, thereby separating the substrate heater section from the substrate mask section.

The plasma processing apparatus of the present invention comprises:
The mask heating section is a heater disposed on the substrate mask section along the outer periphery of the substrate mask section.
This allows the substrate mask to be heated over the entire circumferential direction of the chamber, i.e., the entire circumference of the chamber, and the temperature of the substrate mask can be maintained without decreasing over the entire circumference. This prevents the film formed on the substrate mask from peeling off and becoming particles due to localized temperature differences. Therefore, the amount of particles generated in the chamber can be suppressed, preventing them from affecting the film formation characteristics.
As a result, when the mask heating unit raises the temperature of the substrate mask unit, the substrate heater unit descends, and the substrate mask unit is separated from the substrate heater unit, the mask support unit heats the substrate mask unit, thereby maintaining the substrate mask unit at approximately the same temperature as when heated by the substrate heater unit, and preventing the temperature of the substrate mask unit from decreasing. This prevents a film formed on the substrate mask unit by pre-deposition or the like from peeling off due to temperature differences and becoming particles. Therefore, the amount of particles generated in the chamber can be suppressed, preventing them from affecting film formation characteristics.
Furthermore, since the mask heating unit can directly heat the substrate mask unit to raise the temperature of the substrate mask unit, the substrate mask unit can be the heated area, and it is possible to quickly heat the substrate mask unit and optimize the energy required for heating. Heating can be started in a quick response to a temperature drop in the substrate mask unit, and the efficient heat flow caused by direct heating prevents a temperature drop in the substrate mask unit and reduces particle generation.

The plasma processing apparatus of the present invention comprises:
The heater of the mask heating unit is disposed so as to extend around the entire periphery of the substrate mask unit.
This allows the substrate mask to be heated over the entire circumferential direction of the chamber, i.e., the entire circumference of the chamber, and the temperature of the substrate mask can be maintained without decreasing over the entire circumferential direction. Also, the substrate mask can be heated without being affected by the arrangement of other components in the chamber, and a decrease in temperature can be prevented over the entire circumferential direction of the substrate mask.
This prevents the film formed on the substrate mask portion from peeling off and becoming particles due to a locally generated temperature difference, thereby suppressing the amount of particles generated in the chamber and preventing them from affecting film formation characteristics.

The plasma processing apparatus of the present invention comprises:
The heater of the mask heating unit is provided at a position close to the inner periphery of the substrate mask unit.
This facilitates actively heating the portion of the substrate mask portion adjacent to the inner periphery, where the temperature drop is greater than the outer periphery, when the substrate mask portion is separated from the substrate heater portion. Here, since the temperature is higher inside the substrate mask portion due to contact with the substrate heater portion, which is the heat source with the greatest heating amount, the temperature drop at the inner periphery is greater than at the outer periphery when the substrate mask portion is separated from the substrate heater portion. Therefore, by actively heating the inner periphery of the substrate mask portion, it is possible to prevent local temperature differences and prevent particle generation due to peeling of the film formed on the substrate mask portion. This reduces the amount of particles generated in the chamber and prevents them from affecting film formation characteristics.
Furthermore, by positioning the heater of the mask heating unit at a position where it does not come into contact with the tip of the mask support unit, that is, by positioning the heater of the mask heating unit at a position radially inward of the chamber than the tip of the mask support unit, it becomes easy to actively heat the portion of the substrate mask close to its inner circumference when supported by the mask support unit, regardless of the temperature of the mask support unit.
Therefore, it is possible to prevent the temperature of the substrate mask portion close to the substrate from decreasing, thereby preventing a film formed on the substrate mask portion by pre-deposition or the like from peeling off due to a temperature difference and becoming particles, thereby suppressing the amount of particles generated in the chamber and preventing them from affecting the film formation characteristics.

The plasma processing apparatus of the present invention comprises:
A plurality of the heaters are arranged concentrically around the outer periphery of the substrate mask portion.
This allows the substrate mask to be heated to a predetermined temperature even when the temperature distribution varies in the radial direction from the outer periphery to the inner periphery of the substrate mask or when the substrate mask has a large heat capacity, thereby suppressing the amount of particles generated in the chamber and preventing them from affecting the film formation characteristics.
The concentric heaters can be controlled independently, which makes it possible to maintain a desirable temperature state of the substrate mask portion.

The plasma processing apparatus of the present invention comprises:
Contacts for energizing the heater of the mask heating unit are disposed on the lower surface of the substrate mask unit and on the upper surface of the mask support unit.
This allows the contacts on the underside of the substrate mask part and the contacts on the upper surface of the mask support part to come into contact with each other when the substrate heater part is lowered and the substrate mask part is placed on the mask support part, thereby allowing current to flow through the heater of the substrate mask part.
Therefore, when the substrate heater section is lowered and the substrate mask section is placed on the mask support section, the heater of the mask heating section can be energized in conjunction with the operation of the substrate mask section moving away from the substrate heater section.
In addition, when the substrate heater section rises and the substrate mask section moves away from the mask support section, the power supply to the heater of the mask heating section can be cut off in conjunction with the operation of placing the substrate mask section on the substrate heater section.

The plasma processing apparatus of the present invention comprises:
The contacts project downwardly from the lower surface of the substrate mask portion.
This allows the contact points on the underside of the substrate mask portion and the contact points on the upper surface of the mask support portion to reliably contact each other when the substrate mask portion is placed on the mask support portion, thereby allowing current to flow through the heater of the substrate mask portion.

The plasma processing apparatus of the present invention comprises:
The contacts protrude upward from the upper surface of the mask support portion.
This allows the contact points on the underside of the substrate mask portion and the contact points on the upper surface of the mask support portion to reliably contact each other when the substrate mask portion is placed on the mask support portion, thereby allowing current to flow through the heater of the substrate mask portion.

The plasma processing apparatus of the present invention comprises:
The outer periphery of the substrate mask portion is located radially outward from the tip end of the mask support portion in plan view.
This allows the height of the substrate mask portion to be regulated by the mask support portion so that when the substrate heater portion is lowered and the substrate mask portion is placed on the mask support portion, the lower surface of the substrate mask portion is positioned at the same position as the upper surface of the mask support portion, and the substrate mask portion can be kept from lowering further than that state.

The plasma processing apparatus of the present invention comprises:
A temperature detector is provided to detect the temperature of the substrate mask portion.
This makes it possible to detect any fluctuations in the temperature of the substrate mask section and feed back the results to the control of the heater of the mask heating section.
This allows the temperature fluctuation of the substrate mask portion to be maintained within a predetermined range, making it possible to set the temperature accurately.
Here, the temperature detection unit can include a radiation thermometer placed outside the chamber to measure the surface temperature of the substrate mask portion, a detection hole that penetrates the chamber so that the substrate mask portion can be seen from the radiation thermometer, and a translucent sealing member that seals the chamber inside the detection hole and allows light to pass through the detection hole.

The plasma processing apparatus of the present invention comprises:
The temperature detection unit detects the temperature of the lower surface of the substrate mask unit.
As a result, when the substrate mask is placed on the substrate heater, the temperature change is most drastic on the underside of the substrate mask, which is in contact with the substrate heater, which is the heat source. By detecting the temperature of the underside of the substrate mask, it is possible to accurately detect the temperature change of the substrate mask and provide quick feedback, thereby further reducing the temperature change range of the substrate mask.
This makes it possible to further suppress particle generation.
Here, in order to measure the temperature of the underside of the substrate mask part, the temperature detection part can include a radiation thermometer arranged outside the chamber to measure the temperature of the underside of the substrate mask part, a detection hole penetrating the chamber so that the underside of the substrate mask part can be seen from the radiation thermometer, and a light-transmitting sealing member that seals the chamber around the detection hole and allows light to pass through the detection hole. Note that a detection hole penetrating the substrate heater part can also be provided.

The plasma processing method of the present invention includes:
A plasma processing method for performing plasma processing in any one of the plasma processing apparatuses described above, comprising:
When the substrate mask part is placed on the substrate heater part, the substrate mask part is heated by the substrate heater part;
When the substrate mask section is spaced apart from the substrate heater section, the substrate mask section is heated by the mask heating section.
This prevents the substrate mask section, which is separated from the substrate heater section as a heat source and whose temperature drops, from being heated by the heater of the mask heating section, thereby preventing a drop in temperature.
The heater of the mask heating unit can be turned ON when the substrate mask unit separates from the substrate heater unit and then separates from the mask support unit, and can be turned OFF when the substrate mask unit is placed on the substrate heater unit and then separates from the mask support unit.

This invention has the effect of suppressing temperature fluctuations in the substrate mask portion and preventing particle generation.

1 is a schematic vertical cross-sectional view showing a first embodiment of a plasma processing apparatus according to the present invention; 3 is a schematic enlarged cross-sectional view showing a state in which a substrate mask part is raised in the first embodiment of the plasma processing apparatus according to the present invention; FIG. 3 is a schematic enlarged cross-sectional view showing a state in which a substrate mask part is lowered in the first embodiment of the plasma processing apparatus according to the present invention; FIG. 1 is a flowchart illustrating a first embodiment of a plasma processing method according to the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. 1A to 1C are cross-sectional views showing steps of a plasma processing method according to a first embodiment of the present invention. FIG. 10 is a schematic enlarged cross-sectional view showing a state in which a substrate mask portion is raised in a second embodiment of the plasma processing apparatus according to the present invention. FIG. 11 is a schematic enlarged cross-sectional view showing a state in which a substrate mask portion is raised in a third embodiment of a plasma processing apparatus according to the present invention. FIG. 10 is a schematic plan view showing a substrate mask portion in a third embodiment of a plasma processing apparatus according to the present invention. FIG. 10 is a schematic enlarged cross-sectional view showing a state in which a substrate mask part is lowered in a third embodiment of the plasma processing apparatus according to the present invention. FIG. 10 is a schematic enlarged cross-sectional view showing a state in which a substrate mask portion is raised in a fourth embodiment of a plasma processing apparatus according to the present invention. FIG. 10 is a schematic plan view showing a substrate mask portion in a fifth embodiment of a plasma processing apparatus according to the present invention. FIG. 13 is a schematic plan view showing another example of the substrate mask unit in the fifth embodiment of the plasma processing apparatus according to the present invention. FIG. 13 is a schematic enlarged cross-sectional view showing a state in which a substrate mask portion is raised in a sixth embodiment of the plasma processing apparatus according to the present invention. 1 is a graph illustrating an example according to the present invention. 1 is a graph illustrating an example according to the present invention. 1 is a graph illustrating an example according to the present invention.

A first embodiment of a plasma processing apparatus according to the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing a plasma processing apparatus according to this embodiment, and in the figure, reference numeral 1 denotes the plasma processing apparatus.
In addition, in the drawings used in the following explanation, the dimensions and proportions of each component may be appropriately changed from the actual ones in order to make each component large enough to be recognizable on the drawing.

The plasma processing apparatus 1 according to this embodiment is a film forming apparatus that uses a plasma CVD method.
As shown in FIG. 1, the plasma processing apparatus 1 includes a processing chamber 101 having a film formation space 2a which is a reaction chamber.
The processing chamber 101 is composed of a vacuum chamber (chamber) 2 , an electrode flange 4 , and an insulating flange 81 sandwiched between the vacuum chamber (chamber) 2 and the electrode flange 4 .

The vacuum chamber 2 has a bottom (inner bottom surface) 11 and a side wall (wall portion) 24 standing from the periphery of the bottom (inner bottom surface) 11 .
The vacuum chamber 2 is made of aluminum or an aluminum alloy.

An opening is formed in the bottom (inner bottom surface) 11 of the vacuum chamber 2. A support 16 is inserted into this opening, and the support 16 is disposed below the vacuum chamber 2.
The tip of the support pillar 16 is located inside the vacuum chamber 2. A plate-shaped susceptor (substrate heater portion) 15 is connected to the tip of the support pillar 16.
The bottom (inner bottom surface) 11 and the side wall (wall) 24 are made of aluminum or an aluminum alloy.

The support pillar 16 is connected to an elevation drive unit (elevating mechanism) 16A provided outside the vacuum chamber 2. The support pillar 16 can be moved up and down by the elevation drive unit (elevating mechanism) 16A. In other words, the susceptor 15 connected to the tip of the support pillar 16 is configured to be able to move up and down in the vertical direction.

A bellows (not shown) is provided outside the vacuum chamber 2, covering the outer periphery of the support 16. The bellows keeps the film formation space 2a sealed when the support 16 moves up and down.

An exhaust pipe 27 is connected to the vacuum chamber 2 at a position closer to the bottom 11 than the susceptor 15. A vacuum pump 28 is provided at the tip of the exhaust pipe 27. The vacuum pump 28 reduces the pressure inside the vacuum chamber 2 to create a vacuum state.

An electrode flange 4 is attached to the top of the vacuum chamber 2 via an insulating flange 81 .
In the vacuum chamber 2, a step portion and a high-frequency electrode support portion 23 are provided at the upper end of the wall portion 24. The step portion and the high-frequency electrode support portion 23 are each made of a conductive material.
The step portion and the high-frequency electrode support portion 23 are made of aluminum, an aluminum alloy, or the like.

The high-frequency electrode support 23 is placed on the upper end of the wall 24. The high-frequency electrode support 23 is provided around the periphery so as to protrude radially inward of the chamber 2. In other words, the inner diameter of the high-frequency electrode support 23 is smaller than the inner diameter of the wall 24 of the chamber 2.
The lower end of the shield cover 13 is placed on the upper end of the high-frequency electrode support portion 23 .

An insulating flange 81 contacts the radially inner side of the high-frequency electrode support portion 23 .
The insulating flange 81 has a radial dimension smaller than that of the wall portion 24. The radial cross section of the insulating flange 81 is formed in a substantially Z-shape. That is, the insulating flange 81 contacts the radially inner side of the high-frequency electrode support portion 23 and has a frame portion 81b extending parallel to the wall portion 24.

An upper insulating flange portion 81c protruding radially outward is provided at the upper end of the frame portion 81b of the insulating flange 81. A lower insulating flange portion 81a protruding radially inward is provided at the lower end of the frame portion 81b of the insulating flange 81.
The upper insulating flange portion 81 c is in contact with the upper end of the high-frequency electrode support portion 23 and is capable of supporting the insulating flange 81 .

The lower end of an electrode flange 4 serving as an electrode portion and the shower plate 5 are in contact with the radially inner sides of the lower insulating flange portion 81a and the frame portion 81b.
The radially inner contour of the lower insulating flange portion 81a limits the range of exposure of the electrode flange 4 and the shower plate 5 to the film formation space 2a. The lower insulating flange portion 81a functions as an electrode insulating cover.

The electrode flange 4 has an upper plate 4a and a peripheral wall 4c.
The electrode flange 4 is disposed so that the opening of the peripheral wall 4 c is positioned below the substrate 10 in the vertical direction.

A shower plate 5 is attached to the opening formed by the lower end of the peripheral wall 4c. The upper plate 4a and shower plate 5 are spaced apart in the vertical direction and arranged approximately parallel to each other. This forms a space 14 between the electrode flange 4 and the shower plate 5.

The upper plate 4a of the electrode flange 4 faces the shower plate 5. The upper plate 4a is provided with a gas inlet 4b.
A gas introduction pipe 7 is provided between a process gas supply unit 21 provided outside the processing chamber 101 and the gas introduction port 4b.

One end of the gas introduction pipe 7 is connected to the gas introduction port 4b, and the other end of the gas introduction pipe 7 is connected to a process gas supply unit 21.
The gas introduction pipe 7 passes through a shield cover 13, which will be described later. A process gas is supplied from a process gas supply unit 21 to the space 14 through the gas introduction pipe 7.

The space 14 functions as a gas introduction space into which a process gas is introduced.
The shower plate 5 has a plurality of gas outlets 6 formed therein.
The process gas introduced into the space 14 is ejected from the gas ejection port 6 into the film formation space 2 a in the vacuum chamber 2 .

The electrode flange 4 and the shower plate 5 are each made of a conductive material.
A shield cover 13 is provided around the electrode flange 4 so as to cover the electrode flange 4 .
The shield cover 13 is not in contact with the electrode flange 4. The shield cover 13 is arranged so as to be electrically connected to the vacuum chamber 2.

A high frequency power source 9 (high frequency power source) provided outside the vacuum chamber 2 is connected to the electrode flange 4 via a matching box 12 .
The matching box 12 is attached to a shield cover 13 .
The electrode flange 4 and the shower plate 5 are configured as a cathode electrode.
The vacuum chamber 2 is grounded via a shield cover 13 .

The susceptor (substrate heater unit) 15 is a plate-like member having a flat surface. The substrate 10 is placed on an upper surface 15a of the susceptor 15. The susceptor 15 is formed so that the normal direction of the placed substrate 10 is parallel to the axis of the support pillars 16.
The susceptor 15 functions as a ground electrode, i.e., an anode electrode. For this reason, the susceptor 15 is made of a conductive metal or the like. For example, the susceptor 15 is made of aluminum, an aluminum alloy, or the like.

The susceptor 15 is made of aluminum or aluminum alloy with an anodized surface.
When the substrate 10 is placed on the susceptor 15, the substrate 10 and the shower plate 5 are positioned close to each other and parallel to each other.
When the process gas is ejected from the gas ejection port 6 while the substrate 10 is placed on the susceptor 15 , the process gas is supplied to the space above the processing surface 10 a of the substrate 10 .

The susceptor 15 has a built-in heater, which can heat the substrate 10 placed on the susceptor 15 and adjust the temperature.
A heater wire 19 is provided inside the susceptor 15. The heater wire 19 adjusts the temperatures of the susceptor 15 and the substrate 10 to predetermined temperatures.

The heater wire 19 protrudes downward from the rear surface of the susceptor 15 at approximately the center thereof when viewed vertically.
The heater wire 19 is inserted through through-holes formed in the approximately central portion of the susceptor 15 and the support 16 , and is led to the outside of the vacuum chamber 2 .

The heater wire 19 is connected to a control unit 30 equipped with a power supply outside the vacuum chamber 2 .
The heater wire adjusts the temperature of the susceptor 15 and the substrate 10 in response to the power supplied from the control unit 30, which is a power source.

A substrate mask portion 31 is provided around the upper surface 15 a of the susceptor 15 at a position adjacent to the outer side of the substrate 10 in the radial direction.
The substrate mask portion 31 is provided around the entire periphery of the substrate 10. The thickness of the substrate mask portion 31 is set to be larger than the thickness of the substrate 10. In other words, the height of the substrate mask portion 31 can protrude upward above the processing surface 10a of the substrate 10.

Alternatively, the substrate mask portion 31 can cover the peripheral portion of the processing surface 10 a of the substrate 10 .
Alternatively, the substrate mask portion 31 may be in contact with the susceptor 15 at a position outside the substrate 10 .

A sidewall 24 of the vacuum chamber 2 is formed with a transfer section 26 (a transfer entrance) used for transferring the substrate 10 in and out.
A door valve 26a for opening and closing the loading/unloading section 26 is provided on the outer surface of the side wall 24 of the vacuum chamber 2. The door valve 26a is, for example, slidable in the vertical direction.

When the door valve 26a slides downward (towards the bottom 11 of the vacuum chamber 2), the loading/unloading section 26 is opened, allowing the substrate 10 to be loaded or unloaded.
On the other hand, when the door valve 26a slides upward (toward the electrode flange 4), the loading/unloading section 26 is closed, and processing of the substrate 10 (film formation processing) can be performed.
A robot hand 20 serving as a transport means is provided outside the carry-in/out section 26 (carry-out entrance).

The susceptor 15 is provided with multiple support pins 17 at positions that contact the peripheral edge of the back surface of the substrate 10. The susceptor 15 is formed with through holes 18 through which the support pins 17 pass. The upper ends 17a of the support pins 17 are enlarged. The through holes 18 are enlarged at the portions that open to the upper surface 15a of the susceptor 15. The upper ends 17a of the support pins 17 are supported by the enlarged portions of the through holes 18, thereby supporting the support pins 17 on the raised susceptor 15. When the susceptor 15 descends, the lower ends of the support pins 17 abut against the bottom 11. The height of the support pins 17 at which their lower ends abut against the bottom 11 corresponds to the height of the loading/unloading section 26. When the substrate 10 is loaded into and unloaded from the vacuum chamber 2 via the loading/unloading section 26, the support pins 17 place the lowered susceptor 15 on which the substrate 10 is placed. The substrate 10 placed on the support pins 17 is raised by the rising susceptor 15 to a processing position at a height close to the shower plate 5. At this time, the substrate 10 is placed on the susceptor 15.

A mask support portion 33 is provided radially outward of the susceptor 15. The tip of the mask support portion 33 is located radially outward of the outer periphery of the susceptor (substrate heater portion) 15 in plan view.
The tip of the mask support portion 33 is located radially inward from the outer periphery of the substrate mask portion 31 in plan view.

FIG. 2 is a schematic enlarged cross-sectional view showing a state in which the substrate mask part is raised in this embodiment.
FIG. 3 is a schematic enlarged cross-sectional view showing a state in which the substrate mask part in this embodiment is lowered.
As shown in Figures 2 and 3, in the plasma processing apparatus 1 of this embodiment, the inner circumference 31a of the substrate mask portion 31, the outer circumference 15c of the susceptor (substrate heater portion) 15, the tip end 33a of the mask support portion 33, and the base end 33b of the mask support portion 33 are concentrically arranged in this order in the radial direction of the vacuum chamber 2.

The thickness of the inner periphery 31a of the substrate mask portion 31 is smaller than the thickness of the outer periphery 31b. The upper surface (front surface) 31c of the substrate mask portion 31 has an inclined portion 31e that slopes toward the inner periphery 31a. The outer portion 31f of the substrate mask portion 31, which is closer to the outer periphery 31b than the inclined portion 31e, is formed to have a uniform thickness.

The lower surface 31d of the substrate mask portion 31 is flush, but may have a recess at a position close to the inner periphery 31a corresponding to the substrate 10 so as to contact the susceptor 15.

In order to increase the heat capacity and suppress temperature fluctuations, it is preferable that the thickness of outer portion 31f be large in substrate mask portion 31. In addition, if the thickness of inner periphery 31a of substrate mask portion 31 is too large, it is not preferable because it will adversely affect the film formation characteristics.
The radial dimension T31e of the inclined portion 31e is set within a range that does not adversely affect the film formation characteristics. If the inclination angle of the inclined portion 31e is too large, it is not preferable because it adversely affects the film formation characteristics.

The mask support part 33 has its base end 33b connected and fixed to the side wall (wall part) 24. A heater 41 serving as the mask heating part 40 is disposed inside the mask support part 33. The heater 41 is, for example, a sheath heater. The heater 41 is insulated from the mask support part 33.

The mask support portion 33 extends over substantially the entire circumferential length of the vacuum chamber 2 .
The tip end 33a of the mask support portion 33 is disposed so that the radial distance from the outer periphery 15c of the susceptor 15 is equal over almost the entire circumferential length.

The mask support portion 33 is made of aluminum, an aluminum alloy, or the like.
The heater 41 extends over substantially the entire circumferential length of the mask support part 33. The heater 41 is disposed along the inner circumference formed by the tip end 33a of the mask support part 33. The heater 41 extends between the tip end 33a and the base end 33b of the mask support part 33.

The width dimension of the heater 41, i.e., the radial dimension of the heater 41, is set smaller than the dimension between the tip end 33a and the base end 33b of the mask support part 33, i.e., the radial dimension of the mask support part 33.
The heater 41 is connected to the control unit 30 via wiring 41a that penetrates the side wall (wall portion) 24. The heater 41 is heated by power supplied from the control unit 30. The heating state of the heater 41 can be controlled by the control unit 30.

The mask support portion 33 has a thermal insulating portion 43 disposed between the base end portion 33 b and the side wall (wall portion) 24 .
The thermal insulating portion 43 is made of a thermal insulating material such as ceramics, and is formed of, for example, alumina, yttria, zirconia, etc. The thermal insulating portion 43 prevents heat from flowing from the mask support portion 33 to the side wall (wall portion) 24 when the mask support portion 33 is heated by the heater 41. The thermal insulating portion 43 prevents a decrease in temperature of the mask support portion 33.

The mask support part 33 is disposed above the loading/unloading part 26 (loading/unloading entrance), that is, at a height close to the shower plate 5 .
Therefore, when the susceptor 15 is lowered, the substrate mask portion 31 is placed on the mask support portion 33 .
At this time, the substrate mask part 31 is in contact with the mask support part 33 , and the substrate mask part 31 can be heated by the mask support part 33 .

Furthermore, the upper surface 31c of the substrate mask portion 31 is positioned at a height closer to the shower plate 5 than the upper surface 15a of the susceptor 15 during plasma processing.
Therefore, during plasma processing, the substrate mask part 31 is spaced above the mask support part 33. During plasma processing, the substrate mask part 31 is not in contact with the mask support part 33. At this time, the substrate mask part 31 is placed on the susceptor 15.

The outer periphery 31b of the substrate mask portion 31 is located radially inward of the sidewall (wall portion) 24. Therefore, communication is established between the film formation space 2a adjacent to the shower plate 5, the area outside the outer periphery 31b of the substrate mask portion 31, above the mask support portion 33, and between the tip 33a of the mask support portion 33 and the outer periphery 15c of the susceptor 15, and gas flow is not obstructed. This allows gas to be exhausted from the film formation space 2a adjacent to the shower plate 5 to the exhaust pipe 27.

As shown in Figures 2 and 3, the plasma processing apparatus 1 in this embodiment has a temperature detection unit 50 that detects the temperature of the substrate mask portion 31.

The temperature detection unit 50 in this embodiment measures the temperature of the surface 31 c of the substrate mask part 31 .
The temperature detection unit 50 includes a radiation thermometer 51 , a detection hole 52 , and a light-transmitting sealing member 53 .

The radiation thermometer 51 is disposed outside the vacuum chamber 2. The radiation thermometer 51 is connected to the control unit 30. The radiation thermometer 51 outputs the measurement result to the control unit 30.
In the drawing, the radiation thermometer 51 is shown inside the detection hole 52, but the arrangement is not limited to this.

The detection hole 52 penetrates the side wall (wall portion) 24 of the vacuum chamber 2 so that the substrate mask portion 31 can be seen from the radiation thermometer 51. The detection hole 52 is formed above the surface 31c of the substrate mask portion 31, which is the plasma processing position, i.e., close to the shower plate 5. The detection hole 52 penetrates the side wall (wall portion) 24 from the radial outside to the inside of the vacuum chamber 2.

The detection hole 52 is inclined downward from the outer side to the inner side in the radial direction of the vacuum chamber 2 .
The detection hole 52 is shaped so that the radiation thermometer 51 can detect the surface 31 c of the substrate mask part 31 both when it is in the plasma processing position and when it is placed on the mask support part 33 .

The light-transmitting sealing member 53 seals the inner opening of the vacuum chamber 2 at the detection hole 52. The light-transmitting sealing member 53 is made of a transparent material that can transmit light through the detection hole 52. The light-transmitting sealing member 53 preferably has properties such as temperature resistance against plasma and vacuum strength.
A plurality of temperature detection units 50 may be provided so that the temperature can be measured at a plurality of locations on the substrate mask unit 31 .

In the plasma processing apparatus 1 of this embodiment, as shown in FIG. 2, when the susceptor 15 is raised to the plasma processing position, the mask heating unit 40 does not heat the mask support unit 33 .
Here, the susceptor 15 and the substrate 10 are heated to a predetermined temperature by the heater wire 19. At this time, the substrate mask part 31 is placed on the susceptor 15 and is in contact with the susceptor 15. Therefore, the substrate mask part 31 is heated to approximately the same temperature as the susceptor 15.

In contrast, in the plasma processing apparatus 1, as shown in FIG. 3, the mask support part 33 is heated by the mask heating part 40 while the substrate mask part 31 is placed on the mask support part 33. At this time, the substrate mask part 31 is placed on the mask support part 33. The substrate mask part 31 is in contact with the mask support part 33. The substrate mask part 31 is heated by the mask support part 33.

Therefore, when placed on the mask support part 33, the temperature of the substrate mask part 31 heated by the mask support part 33 is set to approximately the same temperature as the substrate mask part 31 heated by the susceptor 15 when in the plasma processing position.

This allows the substrate mask portion 31 to be maintained at approximately the same temperature when placed on the mask support portion 33 and when in the plasma processing position. Therefore, temperature changes in the substrate mask portion 31 can be suppressed.

Next, we will explain a plasma processing method in which plasma processing such as film formation is performed on the processing surface 10a of the substrate 10 using the plasma processing apparatus 1.

FIG. 4 is a flowchart showing the plasma processing method according to this embodiment.
As shown in FIG. 4, the plasma processing method in this embodiment includes a pre-process S00, a pre-deposition process S01, a substrate mask heating process S02, a hand-in process S11, a hand-down process S12, a hand-out process S13, a susceptor raising process S21, a plasma processing process S22, a static discharge process S23, a susceptor lowering process S24, a hand-in process S31, a hand-up process S32, a hand-out process S33, and a post-process S40.

The plasma processing method of this embodiment is performed by a plasma processing apparatus 1 shown in FIGS.
In the plasma processing method of this embodiment, first, as a pre-process S00 shown in FIG. 4, the atmosphere, temperature conditions, etc. in the vacuum chamber 2 are set to predetermined states.
First, the door valve 26 a is closed, and the vacuum chamber 2 is depressurized using the vacuum pump 28 .
At this time, the substrate 10 is not placed on the susceptor 15. The heater wire 19 of the susceptor 15 is not energized.
The substrate mask part 31 is placed on the mask support part 33. In the mask support part 33, the heater 41 that serves as the mask heating part 40 is not energized.

Next, in the pre-deposition step S01 shown in Figure 4, the lifting driver 16A is activated, raising the support column 16. The substrate mask part 31 placed on the susceptor 15, which has been pushed upward, also moves upward. The susceptor 15 and substrate mask part 31 are positioned for plasma processing. At this time, the distance between the shower plate 5 and the substrate 10 is determined to the desired value so that it is the gap necessary for proper film formation, and this gap is maintained.

In the pre-deposition step S01, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature. The substrate mask portion 31 is in contact with the heated susceptor 15, and is therefore heated to approximately the same temperature as the susceptor 15.
In addition, in the mask support part 33, the heater 41 that serves as the mask heating part 40 is not energized.

In this state, process gas is introduced into the space 14 from the process gas supply unit 21 via the gas inlet pipe 7 and gas inlet 4b. The process gas is then ejected into the film formation space 2a from the gas ejection ports 6 of the shower plate 5.

The pre-deposition step S01 is a step for performing a film formation process on the surfaces of the shower plate 5 and the susceptor 15 in order to make the atmosphere in the space 14 and other areas in the process of the first film formation the same as the state for the second and subsequent films.
Next, the high frequency power supply 9 is started to apply high frequency power to the electrode flange 4 .
Then, a high frequency current flows from the surface of the electrode flange 4 along the surface of the shower plate 5, and a discharge occurs between the shower plate 5 and the susceptor 15. Then, a plasma P is generated between the shower plate 5 and the upper surface 15a of the susceptor 15.

The process gas is decomposed in the plasma P thus generated, resulting in a plasma-state process gas, which then undergoes a vapor phase growth reaction on the upper surface 15a of the susceptor 15, depositing a thin film. At the same time, a vapor phase growth reaction also occurs on the upper surface 31c of the substrate mask portion 31, depositing a thin film.

After a predetermined time has elapsed, the application of high-frequency power from the high-frequency power source 9 to the electrode flange 4 and the introduction of process gas are stopped, completing the pre-deposition process S01.

4, the vacuum chamber 2 is maintained at a vacuum, and the door valve 26a is kept closed. At the same time, in the substrate mask heating step S02, the lifting drive unit 16A is activated to lower the support column 16. The substrate mask unit 31 also moves downward together with the susceptor 15 that has been pushed downward. The substrate mask unit 31 comes into contact with the mask support unit 33 and stops its descent.
The substrate mask part 31 is placed on the mask support part 33. The susceptor 15 further descends and stops at a position below the transfer part 26 where the substrate 10 can be transferred in and out.

FIG. 5 is a process diagram showing the plasma processing method according to this embodiment.
In the substrate mask heating step S02, the vacuum chamber 2 is maintained at a vacuum, and the door valve 26a is maintained closed. In the substrate mask heating step S02, the upper ends 17a of the support pins 17 protrude upward from the upper surface 15a of the susceptor 15, as shown in FIG.

In the substrate mask heating step S02, the heater 41 serving as the mask heating unit 40 is energized in the mask support unit 33. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall unit) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is heated by the mask support part 33 .

In the substrate mask heating step S<b>02 , the temperature of surface 31 c of substrate mask portion 31 is measured by radiation thermometer 51 of temperature detection unit 50 .
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask portion 31 in the pre-deposition step S01.

As a result, in the substrate mask heating step S02, no temperature difference occurs between the film formed on the substrate mask portion 31 in the pre-deposition step S01 and the substrate mask portion 31. Therefore, dust is not emitted from the substrate mask portion 31, and particles are not generated.

It should be noted that a cleaning step can be performed simultaneously with or after the substrate mask heating step S02 by supplying a cleaning gas to _the vacuum chamber 2. Examples of cleaning gases include chlorine gas, _BCl3 gas, _NF3 gas, _F2 gas, _CF4 gas, _C2F6 gas, and _{C3F8 gas} .

Next, in the hand-in process S11 shown in Figure 4, while the vacuum chamber 2 is maintained at a vacuum, the door valve 26a is opened and the substrate 10 is transported from outside the vacuum chamber 2 to the film formation space 2a via the transport section 26 of the vacuum chamber 2.
FIG. 6 is a process diagram showing the plasma processing method according to this embodiment.

In the hand-in step S11, the substrate mask part 31 is placed on the mask support part 33 as shown in FIG.
In this state, the robot hand 20 serving as a transport means enters the vacuum chamber 2 from the outside of the transfer section 26 (transfer entrance) with the substrate 10 placed thereon, as shown in FIG.

In the hand-in step S11, the heater 41, which serves as the mask heating unit 40, is energized in the mask support unit 33. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall unit) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is heated by the mask support part 33 .
In the hand-in step S11, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature.

In the hand-in step S11, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask portion 31 in the pre-deposition step S01.

In the hand-in step S11, the substrate 10 and robot hand 20, which have cooled to, for example, room temperature, enter the heated susceptor 15. This blocks the radiant heat from the high-temperature susceptor 15 to the substrate mask portion 31.

Without the mask heating unit 40, the cold substrate 10 and robot hand 20 would block the radiant heat from the susceptor 15, causing the temperature of the substrate mask unit 31 to drop rapidly. At this time, due to differences in thermal expansion coefficients, the film that had been attached in the pre-deposition step S01 could peel off from the substrate mask unit 31 and fall onto the incoming substrate 10, deteriorating the film formation characteristics.

In contrast, in the hand-in step S11 of this embodiment, when the cold substrate 10 enters, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask portion 31, and the temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask portion 31 can be maintained so that it does not drop. This makes it possible to prevent the generation of particles.

Next, in a hand-down step S12 shown in FIG. 4, the substrate 10 is placed on the support pins 17.
FIG. 7 is a process diagram showing the plasma processing method according to this embodiment.
In the hand-down step S12, the substrate mask part 31 is placed on the mask support part 33 as shown in FIG.
7, the robot hand 20 as a transport means descends and places the substrate 10 on the upper ends 17a of the support pins 17. The robot hand 20 further descends and moves away from the substrate 10.

In the hand-down step S12, the heater 41, which serves as the mask heating unit 40, is energized in the mask support unit 33. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall unit) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is heated by the mask support part 33 .
In the hand-down step S12, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature.

In the hand-down step S12, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask portion 31 in the pre-deposition step S01.

In the hand-down process S12, the substrate 10 and robot hand 20, which are cooled to room temperature, for example, are placed over the heated susceptor 15. This blocks the radiant heat from the high-temperature susceptor 15 to the substrate mask portion 31. Furthermore, because the substrate 10 is not in contact with the susceptor 15, it is not heated by contact with the high-temperature susceptor 15.

Without the mask heating unit 40, the cold substrate 10 and robot hand 20 would block the radiant heat from the susceptor 15, causing the temperature of the substrate mask unit 31 to drop. In this case, due to differences in thermal expansion coefficients, the film that had been attached in the pre-deposition step S01 could peel off from the substrate mask unit 31 and fall onto the substrate 10 before film formation, deteriorating the film formation characteristics.

In contrast, in the hand-down step S12 of this embodiment, even while the substrate 10 is cold and not in contact with the susceptor 15, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask portion 31, and any temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask portion 31 can be maintained so that it does not drop. This prevents the generation of particles.

Next, in a hand-out step S13 shown in FIG. 4, the robot hand 20 is withdrawn to the outside of the vacuum chamber 2.
FIG. 8 is a process diagram showing the plasma processing method according to this embodiment.

In the hand-out process S13, as shown in Figure 8, the substrate mask part 31 is placed on the mask support part 33.

In the hand-out step S13, the heater 41, which serves as the mask heating unit 40, is energized in the mask support unit 33. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall unit) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is heated by the mask support part 33 .
In the hand-out step S13, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature.

In the hand-out step S13, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask portion 31 in the pre-deposition step S01.

In the hand-out process S13, a cooled substrate 10 at room temperature, for example, is placed over the heated susceptor 15. This blocks the radiant heat from the high-temperature susceptor 15 to the substrate mask portion 31. Furthermore, because the substrate 10 is not in contact with the susceptor 15, it is not heated by contact with the high-temperature susceptor 15.

Without the mask heating unit 40, the cold substrate 10 would block the radiant heat from the susceptor 15, causing the temperature of the substrate mask unit 31 to drop. In this case, due to differences in thermal expansion coefficients, the film that had been attached in the pre-deposition step S01 could peel off from the substrate mask unit 31 and fall onto the substrate 10 before film formation, deteriorating the film formation characteristics.

In contrast, in the hand-out step S13 of this embodiment, even while the substrate 10 is not in contact with the susceptor 15 and is cold, the temperature of the surface 31c of the substrate mask part 31 is measured by the radiation thermometer 51 of the temperature detection part 50, and the temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask part 31 can be maintained so as not to drop, thereby preventing the generation of particles.
After the hand-out step S13 is completed, the door valve 26a is closed while the inside of the vacuum chamber 2 is maintained at a vacuum.

Next, in a susceptor raising step S21 shown in FIG. 4, the susceptor 15 is raised above the vacuum chamber 2.
FIG. 9 is a process diagram showing the plasma processing method according to this embodiment.
FIG. 10 is a process diagram showing the plasma processing method according to this embodiment.

In the susceptor raising step S21, the lifting drive unit 16A is activated to raise the support column 16. The upper surface 15a of the susceptor 15 pushed upward comes into contact with the substrate 10 placed on the upper end 17a of the support pin 17, as shown in FIG.
The substrate 10 in contact with the upper surface 15 a of the susceptor 15 begins to be heated by the high-temperature susceptor 15 .
In this state, the substrate mask part 31 is placed on the mask support part 33 .
The substrate mask part 31 is heated by the mask support part 33 .

In the susceptor raising step S21, the support column 16 is further raised by the lifting drive unit 16A. As the susceptor 15 is pushed further upward, the upper ends 17a of the support pins 17 are housed in the through holes 18, and the substrate 10 is supported by the susceptor 15.

The susceptor 15 is pushed further upward, and the substrate 10 placed on the susceptor comes into contact with the substrate mask portion 31 .
Then, the susceptor 15 and the substrate 10 move upward together with the substrate mask part 31. At this time, the substrate mask part 31 moves away from the mask support part 33. The substrate mask part 31 is placed on the susceptor 15 and the substrate 10.

In the susceptor raising step S21, when the mask support part 33 and the substrate mask part 31 are separated and the substrate mask part 31 comes into contact with the susceptor 15, the heating of the mask support part 33 by the mask heating part 40 is stopped.
The substrate mask part 31 in contact with the high-temperature susceptor 15 is heated by the susceptor 15. Therefore, the temperature of the substrate mask part 31 does not decrease even when it is separated from the mask support part 33. Furthermore, the temperature of the substrate mask part 31 does not decrease even when the heating of the mask support part 33 by the mask heating part 40 is stopped.

In the susceptor raising step S21, the support column 16 is further raised by the lifting drive unit 16A. The susceptor 15, substrate 10, and substrate mask unit 31 that have been pushed upward are stopped at the plasma processing position, as shown in Fig. 10. At this time, the distance between the shower plate 5 and the substrate 10 is determined to be a desired value so that it is the distance necessary for appropriate film formation, and this distance is maintained.
The substrate mask part 31 remains mounted on the susceptor 15 and the substrate 10. The substrate mask part 31 remains heated by the susceptor 15.

Next, in the plasma processing step S22 shown in FIG. 4, plasma is generated inside the chamber 2.
FIG. 11 is a process diagram showing the plasma processing method according to this embodiment.

In the plasma treatment step S22, process gas is introduced into the space 14 from the process gas supply unit 21 via the gas inlet pipe 7 and the gas inlet 4b. The process gas is then ejected into the film formation space 2a from the gas ejection ports 6 of the shower plate 5.

Next, the high frequency power supply 9 is started to apply high frequency power to the electrode flange 4 .
Then, a high frequency current flows from the surface of the electrode flange 4 to the surface of the shower plate 5, and a discharge occurs between the shower plate 5 and the susceptor 15. Then, a plasma P is generated between the shower plate 5 and the processing surface 10a of the substrate 10, as shown in FIG.

The process gas is decomposed in the plasma P thus generated, and a plasma-state process gas is obtained, and a vapor phase growth reaction occurs on the processing surface 10a of the substrate 10, and a thin film is formed on the processing surface 10a.
After a predetermined processing time has elapsed, the plasma treatment step S22 is terminated. For example, the plasma treatment step S22 can be terminated when film formation to a desired film thickness is completed.

In the plasma treatment step S22, the temperature of the surface 31c of the substrate mask portion 31 may be measured using the radiation thermometer 51 of the temperature detection unit 50. It is also possible not to measure the temperature of the surface 31c of the substrate mask portion 31.

Next, as shown in FIG. 4, in the static elimination discharge step S23 and the susceptor lowering step S24, static elimination of the substrate 10 is performed in a state where plasma is generated inside the chamber 2.
FIG. 12 is a process diagram showing the plasma processing method according to this embodiment.
FIG. 13 is a process diagram showing the plasma processing method according to this embodiment.

In the static elimination discharge step S23 and the susceptor lowering step S24, the state in which the plasma P is generated is maintained as in the plasma treatment step S22, as shown in FIG.
In this state, the support column 16 driven by the lifting drive unit 16A is lowered, and the susceptor 15 and the substrate 10 are pushed downward, and are lowered from the plasma processing position.
As the susceptor 15 is further pushed downward, the substrate mask portion 31 comes into contact with the mask support portion 33 .

In the static elimination discharge step S23 and the susceptor lowering step S24, when the mask support part 33 and the substrate mask part 31 come into contact with each other and the substrate mask part 31 is separated from the susceptor 15, the mask heating part 40 starts heating the mask support part 33. It is desirable to turn on the heater 41 before the mask support part 33 comes into contact with the substrate mask part 31, so that heating of the mask support part 33 starts.
In this state, the substrate mask part 31 is placed on the mask support part 33 .
The substrate mask part 31 is heated by the mask support part 33 .

After the susceptor 15 and the substrate 10 placed on it are separated from the substrate mask unit 31, they are driven by the lifting drive unit 16A and pushed further downward.

In the static elimination discharge step S23 and the susceptor lowering step S24, the support columns 16 are further lowered by the lifting/lowering drive unit 16A. As the susceptor 15 is further pushed downward, the lower ends of the support pins 17 come into contact with the bottom 11, as shown in FIG. 12 . The substrate 10 is placed on the upper ends 17a of the support pins 17. The substrate 10 is separated from the susceptor 15.
Once the substrate 10 is separated from the susceptor 15, the heat applied to the substrate 10 weakens and the temperature begins to drop.

Even after the substrate 10 is separated from the susceptor 15, the susceptor 15 is driven by the lifting/lowering drive unit 16A and pushed further downward.
In the static elimination discharge step S23 and the susceptor lowering step S24, the susceptor 15 stops at a position below the loading/unloading section 26 where the substrate 10 can be loaded, as shown in FIG. 13 . At this time, the upper ends 17a of the support pins 17 protrude upward from the upper surface 15a of the susceptor 15. The substrate 10 is spaced apart from the susceptor 15.
With the susceptor 15 at this height, the plasma P is maintained for a predetermined time to remove electricity from the substrate 10 .

In the static elimination discharge step S23 and the susceptor lowering step S24, the heater 41 serving as the mask heating unit 40 in the mask support unit 33 is energized. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the mask support unit 33 and the side wall (wall unit) 24 are insulated by the thermal insulation unit 43.
The substrate mask portion 31 is heated by the susceptor 15 placed thereon or by the mask support portion 33 placed thereon.
In the static elimination discharge step S23 and the susceptor lowering step S24, the heater wire 19 is kept energized inside the susceptor 15. The heater wire 19 heats the susceptor 15 to a predetermined temperature.

In the static elimination discharge step S23 and the susceptor lowering step S24, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask part 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask part 31 in the plasma processing step S22.

During the static elimination discharge process S23 and the susceptor lowering process S24, the heated susceptor 15 is covered with the substrate 10, which has moved away from the susceptor 15 and whose temperature has begun to drop. This blocks the radiant heat from the high-temperature susceptor 15 to the substrate mask portion 31. Furthermore, because the substrate 10 is not in contact with the susceptor 15, it is not heated by contact with the high-temperature susceptor 15.

Without the mask heating unit 40, the substrate 10, whose temperature had dropped, blocked the radiant heat from the susceptor 15, causing the temperature of the substrate mask unit 31 to drop. In this case, due to differences in thermal expansion coefficients, the film that had been attached during the plasma processing step S22 could peel off from the substrate mask unit 31 and fall onto the substrate 10 after film formation, degrading the film characteristics.

In contrast, in the static elimination discharge step S23 and susceptor lowering step S24 of this embodiment, even while the substrate 10 is cooling without contacting the susceptor 15, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask portion 31, and the temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask portion 31 can be maintained so that it does not drop. This prevents the generation of particles.

When the neutralization of the substrate 10 is completed, the neutralization discharge step S23 and the susceptor lowering step S24 are completed.
Also, the introduction of the process gas from the process gas supply unit 21 into the space 14 via the gas introduction pipe 7 and the gas introduction port 4b is stopped.
Similarly, the application of high frequency power from the high frequency power source 9 to the electrode flange 4 is stopped.
This completes the formation of plasma P.

Next, as the hand-in process S31 shown in Figure 4, while the vacuum chamber 2 is maintained at a vacuum, the door valve 26a is opened and the substrate 10 begins to be transported from the film formation space 2a to the outside of the vacuum chamber 2 via the transport section 26 of the vacuum chamber 2.
FIG. 14 is a process diagram showing the plasma processing method according to this embodiment.

In the hand-in step S31, the substrate mask part 31 is placed on the mask support part 33 as shown in FIG.
In this state, the robot hand 20 serving as a transport means enters between the substrate 10 and the susceptor 15 in the vacuum chamber 2 from the outside of the transfer section 26 (transfer entrance), as shown in FIG.

In the hand-in step S31, the heater 41, which serves as the mask heating unit 40, is kept energized in the mask support unit 33. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is maintained in a heated state by the mask support part 33 .
In the hand-in step S31, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature.

In the hand-in step S31, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask part 31 in the plasma processing step S22.

In the hand-in step S31, a cooled robot hand 20, for example at room temperature, enters the heated susceptor 15 and the substrate 10, which has a lower temperature than the susceptor 15. This blocks the radiant heat from the high-temperature susceptor 15 and the slightly cooled substrate 10 from reaching the substrate mask portion 31.

Without the mask heating unit 40, the radiant heat from the susceptor 15 was blocked by the cold robot hand 20, causing the temperature of the substrate mask unit 31 to drop rapidly. In this case, due to differences in thermal expansion coefficients, the film that had been attached during the plasma processing step S22 could peel off from the substrate mask unit 31 and fall onto the substrate 10 after film formation, deteriorating the film characteristics.

In contrast, in the hand-in step S31 of this embodiment, when the cold robot hand 20 enters, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask portion 31, and the temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask portion 31 can be maintained so that it does not drop. This makes it possible to prevent the generation of particles.

Note that in the hand-in process S31, although the temperature has dropped, the substrate 10 has not yet cooled to room temperature. Therefore, in the hand-in process S31, the temperature drop in the substrate mask portion 31 compensated for by heating with the heater 41 is smaller than in the hand-in process S11.

Next, in a hand-up step S32 shown in FIG. 4, the substrate 10 is lifted up by the robot hand 20.
FIG. 15 is a process diagram showing the plasma processing method according to this embodiment.
In the hand-up step S32, the substrate mask part 31 is placed on the mask support part 33 as shown in FIG.
In this state, the robot hand 20 serving as a transport means rises and receives the substrate 10 placed on the upper ends 17a of the support pins 17, as shown in Figure 15. The robot hand 20 then rises and supports the substrate 10.

In the hand-up step S32, the heater 41, which serves as the mask heating unit 40, in the mask support unit 33 is kept energized. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall unit) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is heated by the mask support part 33 .
In the hand-down step S12, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature.

In the hand-up step S32, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask part 31 in the plasma processing step S22.

In the hand-up step S32, the heated susceptor 15 is covered with a substrate 10 that is cooled even more than in the hand-in step S31 and a cooler robot hand 20. This blocks the radiant heat from the high-temperature susceptor 15 to the substrate mask portion 31. Furthermore, because the substrate 10 is not in contact with the susceptor 15, it is not heated by contact with the high-temperature susceptor 15.

Without the mask heating unit 40, the low-temperature substrate 10 and robot hand 20 would block the radiant heat from the susceptor 15, causing the temperature of the substrate mask unit 31 to drop. In this case, due to differences in thermal expansion coefficients, the film that had been adhered during the plasma processing step S22 could peel off from the substrate mask unit 31 and fall onto the substrate 10 after film formation, thereby deteriorating the film formation characteristics.

In contrast, in the hand-up step S32 of this embodiment, even while the substrate 10 is cooling without contacting the susceptor 15, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask portion 31, and the temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask portion 31 can be maintained so that it does not drop. This makes it possible to prevent the generation of particles.

Next, in a hand-out step S33 shown in FIG. 4, the robot hand 20 carrying the substrate 10 is withdrawn to the outside of the vacuum chamber 2, and the substrate 10 is carried out.
FIG. 16 is a process diagram showing the plasma processing method according to this embodiment.

In the hand-out process S33, the substrate mask part 31 is placed on the mask support part 33, as shown in Figure 16.

In the hand-out step S33, the heater 41, which serves as the mask heating unit 40, in the mask support unit 33 is kept energized. The heater 41 is heated by power supplied from the control unit 30. Heating by the heater 41 is performed efficiently because the thermal insulation between the mask support unit 33 and the side wall (wall unit) 24 is achieved by the thermal insulation unit 43.
The substrate mask part 31 is heated by the mask support part 33 .
In the hand-out step S13, the heater wire 19 inside the susceptor 15 is energized. The heater wire 19 heats the susceptor 15 to a predetermined temperature. Note that if a plasma treatment is not to be performed subsequently in a subsequent step, energization of the heater wire 19 may be stopped.

In the hand-out step S33, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31.
The control unit 30 controls the heating state of the heater 41 based on the output of the temperature detection unit 50. Specifically, the control unit 30 controls the heating state of the heater 41 so as to maintain a temperature substantially equal to the temperature of the surface 31c of the substrate mask part 31 in the plasma processing step S22.

In the hand-out process S33, there is nothing blocking the heated susceptor 15 from the substrate mask portion 31. This ensures that the radiant heat from the high-temperature susceptor 15 to the substrate mask portion 31 is not blocked.

In the hand-out step S33 of this embodiment, while the substrate 10 is in the vacuum chamber 2, even if the substrate 10 is not in contact with the susceptor 15 and is cooled, the radiation thermometer 51 of the temperature detection unit 50 measures the temperature of the surface 31c of the substrate mask unit 31, and any temperature drop can be compensated for by heating with the heater 41. Therefore, the temperature of the substrate mask unit 31 can be maintained so as not to drop, thereby preventing the generation of particles.
After the hand-out step S33 is completed, the door valve 26a is closed while the inside of the vacuum chamber 2 is maintained at a vacuum.

After the hand-out step S33 is completed, a post-process S40 can be performed by supplying a cleaning gas to _the vacuum chamber 2. Examples of cleaning gases include chlorine gas, _BCl3 gas, _NF3 gas, _F2 gas, _CF4 gas, _C2F6 gas, and _C3F8 gas _.
Furthermore, as a post-process S40, a process such as a gas flow process or a plasma discharge process can be performed to stabilize the temperature inside the vacuum chamber 2.

After completing the post-process S40, if plasma processing is to be performed on another substrate 10, the process can return to either the pre-process S00, the pre-deposition process S01, or the substrate mask heating process S02.

The plasma processing apparatus and plasma processing method of this embodiment allow plasma processing to be performed without lowering the temperature of the substrate mask portion 31. This prevents the generation of particles.

In particular, when the mask heating unit 40 is not present, it is possible to maintain a nearly constant temperature of the substrate mask unit 31 throughout the entire substrate 10 loading process, which is the process in which the temperature of the substrate mask unit 31 drops the most.

Furthermore, while the substrate mask portion 31 is in contact with the mask support portion 33, that is, while the substrate mask portion 31 is not in contact with the susceptor 15, which is the heat source, the temperature of the substrate mask portion 31 can be maintained almost constant.

This makes it possible to prevent the substrate mask portion 31 and the film attached to the surface of the substrate mask portion 31 from peeling off due to the difference in thermal expansion coefficient and becoming particles.
Therefore, with a simple configuration having a small number of parts, it is possible to improve the film formation efficiency, the yield, and the film characteristics.

Furthermore, this embodiment has the effect of reducing transportation problems caused by component distortion due to differences in thermal expansion compared to other chamber components, which occurs when the temperature of the substrate mask portion 31 drops.

A second embodiment of the plasma processing apparatus according to the present invention will be described below with reference to the drawings.
FIG. 17 is a schematic enlarged cross-sectional view showing a state in which the substrate mask section is raised in the plasma processing apparatus of this embodiment.
This embodiment differs from the first embodiment described above in terms of the temperature detection unit, and other components corresponding to those in the first embodiment described above are given the same reference numerals and descriptions thereof will be omitted.

The temperature detection unit 50 in this embodiment is capable of measuring the temperature of the lower surface 31 d of the substrate mask part 31 .
The temperature detection unit 50 includes a radiation thermometer 55 , detection holes 56 and 56 a , and a light-transmitting sealing member 57 .

The radiation thermometer 55 is disposed outside the bottom (inner bottom surface) 11 of the vacuum chamber 2. That is, the radiation thermometer 55 is disposed below the bottom (inner bottom surface) 11 of the vacuum chamber 2. The radiation thermometer 55 is connected to the control unit 30 in the same manner as the radiation thermometer 51. The radiation thermometer 55 outputs the measurement result to the control unit 30 in the same manner as the radiation thermometer 51.
In the drawing, the radiation thermometer 55 is shown inside the detection hole 56, but the arrangement is not limited to this.

The detection hole 56 penetrates the bottom (inner bottom surface) 11 of the vacuum chamber 2 so that the underside 31d of the substrate mask portion 31 can be seen from the radiation thermometer 55. The detection hole 56 is formed below the underside 31d of the substrate mask portion 31, which is in the plasma processing position, i.e., below the bottom (inner bottom surface) 11. The detection hole 56 penetrates the bottom (inner bottom surface) 11 in the vertical direction in the vacuum chamber 2.

The detection hole 56a penetrates the susceptor 15 so that the underside 31d of the substrate mask portion 31 can be seen from the radiation thermometer 55. The detection hole 56a is formed below the underside 31d of the substrate mask portion 31, which is in the plasma processing position, i.e., in a position close to the bottom (inner bottom surface) 11. The detection hole 56a penetrates the susceptor 15 vertically in the thickness direction of the susceptor.

The axial directions of the detection holes 56 and 56a are aligned. In other words, the detection holes 56 and 56a are formed to continuously penetrate the bottom (inner bottom surface) 11 and the susceptor 15, making the underside 31d of the substrate mask portion 31 visible from the radiation thermometer 55.

The detection holes 56 and 56a are shaped so that the radiation thermometer 55 can detect the radiation when the underside 31d of the substrate mask part 31 is in the plasma processing position and when it is placed on the mask support part 33.

The light-transmitting sealing member 57 seals the inner opening of the vacuum chamber 2 at the detection hole 56. The light-transmitting sealing member 57 is made of a transparent material that can transmit light through the detection hole 56. The light-transmitting sealing member 57 preferably has properties such as temperature resistance against plasma and vacuum strength.
A plurality of temperature detection units 50 may be provided so that the temperature of the lower surface 31 d of the substrate mask unit 31 can be measured at a plurality of locations.

In the plasma processing apparatus 1 of this embodiment, as shown in FIG. 17, it is possible to measure the temperature of the lower surface 31d of the substrate mask portion 31, which fluctuates more drastically than the temperature of the surface 31c of the substrate mask portion 31.
The film that causes particles is formed on the surface 31c of the substrate mask portion 31, so by controlling the temperature of the surface 31c of the substrate mask portion 31, peeling of the film can be prevented.

Here, more accurate temperature control is possible by measuring the temperature of the substrate mask part 31 with a radiation thermometer 55 through a detection hole 56 which serves as an observation window of the vacuum chamber 2. In this case, it is preferable that the temperature of the substrate mask part 31 be measured at the lower surface 31d of the substrate mask part 31.
This is because a film adheres to the upper surface 31c, which is the film-forming surface, and the emissivity changes depending on the film thickness, so the accuracy of temperature measurement decreases with each film formation. Temperature control of the substrate mask portion can be easily achieved.

In addition, because the underside 31d of the substrate mask portion 31 contacts the mask support portion 33 or susceptor 15, which are the heat source, measuring the temperature of the underside 31d of the substrate mask portion 31 makes it possible to more quickly and accurately detect temperature changes in the substrate mask portion 31. In other words, measuring the temperature of the underside 31d of the substrate mask portion 31 makes it possible to respond to temperature changes in the substrate mask portion 31 more accurately.

Furthermore, in this embodiment, by controlling the temperature of the underside 31d of the substrate mask portion 31, it is possible to suppress the temperature difference with the susceptor 15. This has the effect of making it easier to suppress the generation of particles due to friction between the substrate mask portion 31 and the susceptor 15, which is caused by thermal expansion when the substrate mask portion 31 comes into contact with the high-temperature susceptor 15.

In this embodiment, radiation thermometer 51 and radiation thermometer 55 are arranged as the temperature detection unit 50, but a configuration with only radiation thermometer 55 is also possible.

A third embodiment of the plasma processing apparatus according to the present invention will be described below with reference to the drawings.
Fig. 18 is a schematic enlarged cross-sectional view showing a state in which the substrate mask section in the plasma processing apparatus of this embodiment is raised, Fig. 19 is a schematic plan view showing the substrate mask section in the plasma processing apparatus of this embodiment, and Fig. 20 is a schematic enlarged cross-sectional view showing a state in which the substrate mask section in the plasma processing apparatus of this embodiment is lowered.
This embodiment differs from the first and second embodiments described above in terms of the mask heating unit. Other configurations corresponding to those of the first and second embodiments described above are given the same reference numerals and descriptions thereof will be omitted.

As shown in Figures 18 to 20, the mask heating unit 40 in this embodiment has heaters 42, 44 embedded in the substrate mask unit 31. Furthermore, the mask heating unit 40 in this embodiment does not have a heater embedded inside the mask support unit 33.

The heaters 42 and 44 are linear sheath heaters and are insulated from the substrate mask portion 31.
19 , the heaters 42, 44 extend over substantially the entire circumferential length of the substrate mask portion 31. The heaters 42, 44 are both arranged along the inner periphery 31 a of the substrate mask portion 31. The heaters 42, 44 are provided between the inner periphery 31 a and the outer periphery 31 b of the substrate mask portion 31.

As shown in FIGS. 18 and 20, the heaters 42 and 44 are both provided inside the substrate mask portion 31 at approximately the center in the thickness direction.
The heaters 42 and 44 can be provided at approximately the same position in the thickness direction of the substrate mask part 31 .

Alternatively, the heaters 42, 44 may be provided at other positions in the thickness direction of the substrate mask portion 31. For example, the heaters 42, 44 may be provided at positions close to the upper surface 31 c in the thickness direction of the substrate mask portion 31. Alternatively, the heaters 42, 44 may be provided at positions close to the lower surface 31 d in the thickness direction of the substrate mask portion 31.
The heater 42 and the heater 44 may be provided at different positions in the thickness direction of the substrate mask part 31 .

As shown in FIG. 19, heaters 42 and 44 are concentric and have different diameters when substrate mask portion 31 is viewed from above.
The heater 42 is disposed along the inner periphery 31 a at a position closer to the inner periphery 31 a of the substrate mask portion 31 than the heater 44 is.

The heater 42 may be arranged around the entire circumference of the substrate mask portion 31 at an equal distance from the inner circumference 31 a.
The heater 42 is disposed at a position close to the inclined portion 31e in the radial direction of the substrate mask portion 31. For example, the heater 42 is disposed along a boundary close to the outer periphery 31b of the inclined portion 31e in the radial direction of the substrate mask portion 31.

To avoid a temperature drop in the substrate mask portion 31, it is preferable for its thickness to be large, as this increases its heat capacity. However, in consideration of the film formation characteristics on the substrate 10, the thickness of the substrate mask portion 31 is set to be smaller in the area close to the inner periphery 31a.

To accommodate the reduced heat capacity of the substrate mask portion 31 in the thinner portions, it is preferable to position the heater 42 as close to the inner periphery 31a as possible. Therefore, if the outer portion 31f of the substrate mask portion 31 has a sufficient uniform thickness, the heater 42 can be positioned so that it coincides with the inclined portion 31e in a plan view.

In order to increase the heat capacity and suppress temperature fluctuations, it is preferable that the thickness of outer portion 31f be large in substrate mask portion 31. In addition, if the thickness of inner periphery 31a of substrate mask portion 31 is too large, it is not preferable because it will adversely affect the film formation characteristics.
The radial dimension of the inclined portion 31e is set within a range that does not adversely affect the film formation characteristics. If the inclination angle of the inclined portion 31e is too large, it is not preferable because it adversely affects the film formation characteristics.

Furthermore, the thickness of the heater 42 is determined by balancing the heat generation amount required per length of the heater 42, the total circumferential length of the substrate mask portion 31, and the thickness (wall thickness) required when embedding the heater 42 in the substrate mask portion 31.

Taking these conditions into consideration, the placement of the heater 42 in the radial direction of the substrate mask portion 31 is determined.

The heater 44 is positioned closer to the outer periphery 31b of the substrate mask portion 31 than the heater 42, and is positioned along the outer periphery 31b.

The heater 44 may be arranged around the entire circumference of the substrate mask portion 31 at an equal distance from the outer periphery 31b.
The heater 44 is disposed near a midpoint between the outer periphery 31b of the substrate mask part 31 and the outer edge of the inclined part 31e in the radial direction of the substrate mask part 31. For example, the heater 44 is disposed in the outer part 31f in the radial direction of the substrate mask part 31, in a range that overlaps with the mask support part 33 in a plan view when the substrate mask part 31 is placed on the mask support part 33.

To avoid a temperature drop in the substrate mask portion 31, it is preferable for its thickness to be large, as this increases its heat capacity. However, in consideration of the film formation characteristics on the substrate 10, the thickness of the substrate mask portion 31 is set to be smaller in the area close to the inner periphery 31a.

Therefore, if the outer portion 31f of the substrate mask portion 31 has a sufficient thickness, the heater 42 can be provided in a position to heat the inclined portion 31e, and the heater 44 can be provided in a position to heat the outer portion 31f.

Furthermore, since the outer portion 31f of the substrate mask portion 31 comes into contact with the mask support portion 33, if a heater is not provided in this mask support portion 33, it is preferable that the heater 44 has the ability to also heat the mask support portion 33 in order to prevent the temperature of the substrate mask portion 31 from dropping.
In order to accommodate the heat capacity of outer portion 31f, which has a large thickness, in substrate mask portion 31, heater 44 preferably has a larger heat generation amount than heater 42 located close to inner periphery 31a.

Furthermore, the thickness of the heater 44 is determined by balancing the heat generation amount required per length of the heater 44, the total circumferential length of the substrate mask portion 31, and the thickness (wall thickness) required when embedding the heater 44 in the substrate mask portion 31.

Taking these conditions into consideration, the placement of the heater 44 in the radial direction of the substrate mask portion 31 is determined.

As shown in Figures 18 and 20, heaters 42 and 44 are each connected to the control unit 30.

18 and 20, the heater 42 is connected to the control unit 30 via a wire 42a, a contact 42b, a contact 42c, and a wire 42d. The wire 42a, the contact 42b, the contact 42c, and the wire 42d are all made of a conductor.
The wiring 42a connects the heater 42 and the contact 42b. The wiring 42a passes through the substrate mask portion 31.

As shown in FIG. 19, the contacts 42b are provided at both ends of the heater 42, respectively.
The contact point 42b is formed on the lower surface 31d of the substrate mask part 31. The contact point 42b is formed to protrude downward from the lower surface 31d of the substrate mask part 31.
The contact point 42c is formed on the upper surface 33c of the mask support portion 33. The contact point 42c is formed to protrude above the upper surface 33c of the mask support portion 33.
The wiring 42d is connected to the contact 42c, which is connected to the control unit 30 via the wiring 42d that penetrates the mask support portion 33 and the side wall (wall portion) 24.

As shown in FIGS. 18 to 20, the contacts 42b and 42c are provided at positions that overlap each other in plan view.
20, the contacts 42b and 42c come into contact with each other when the substrate mask part 31 is placed on the mask support part 33. Furthermore, the contacts 42b and 42c do not come into contact with each other when the substrate mask part 31 is separated from the mask support part 33 as shown in FIG.
That is, the contact points 42b and 42c come into contact with and separate from each other in conjunction with the rise and fall of the susceptor 15, as shown in FIGS.
The two contact points 42b at both ends of the heater 42 are simultaneously brought into contact with and separated from the corresponding contact points 42c in conjunction with the rise and fall of the susceptor 15.

18 and 20, the heater 44 is connected to the control unit 30 via a wire 44a, a contact 44b, a contact 44c, and a wire 44d. The wire 44a, the contact 44b, the contact 44c, and the wire 44d are all made of a conductor.
The wiring 44a connects the heater 44 and the contact 44b. The wiring 44a passes through the substrate mask portion 31.

As shown in FIG. 19, the contacts 44b are provided at both ends of the heater 44.
The contact point 44b is formed on the lower surface 31d of the substrate mask part 31. The contact point 44b is formed to protrude downward from the lower surface 31d of the substrate mask part 31.
The contact point 44c is formed on the upper surface 33c of the mask support portion 33. The contact point 44c is formed to protrude above the upper surface 33c of the mask support portion 33.
The wiring 44d is connected to the contact 44c, which is connected to the control unit 30 via the wiring 44d that penetrates the mask support portion 33 and the side wall (wall portion) 24.

As shown in FIGS. 18 to 20, the contacts 44b and 44c are provided at positions that overlap each other in plan view.
As shown in Fig. 20, the contacts 44b and 44c come into contact with each other when the substrate mask part 31 is placed on the mask support part 33. Furthermore, as shown in Fig. 18, the contacts 44b and 44c do not come into contact with each other when the substrate mask part 31 is separated from the mask support part 33.
That is, the contact points 44b and 44c come into contact with and separate from each other in conjunction with the rise and fall of the susceptor 15, as shown in FIGS.
Two contacts 44b at both ends of the heater 44 are simultaneously brought into contact with and separated from the corresponding contacts 44c in conjunction with the rise and fall of the susceptor 15.

As shown in FIG. 19, the contacts 42b and 44b are provided at different positions in a plan view.
Furthermore, the pair of two contacts 42b and 42c, and the pair of two contacts 44b and 44c, are brought into contact with and separated from each other at the same time, as shown in FIGS.

Next, we will explain a plasma processing method in which plasma processing such as film formation is performed on the processing surface 10a of the substrate 10 using the plasma processing apparatus 1.

In the plasma processing method of this embodiment, similar to the first embodiment shown in FIG. 4, the mask heating unit 40 is in a heated state in the substrate mask heating step S02, hand-in step S11, hand-down step S12, hand-out step S13, static discharge step S23, susceptor lowering step S24, hand-in step S31, hand-up step S32, and hand-out step S33.

In the plasma processing method of this embodiment, the heating switching of the mask heating unit 40 is linked to the raising and lowering operation of the susceptor 15 .
That is, when the susceptor 15 descends and places the substrate mask part 31 on the mask support part 33, as shown in FIG. 20, the contacts 42b and 42c, and the contacts 44b and 44c come into contact with each other, and the heaters 42 and 44 are energized by the control part 30, which is the power source, and are turned on.
Furthermore, when the susceptor 15 rises and the substrate mask portion 31 separates from the mask support portion 33, as shown in FIG. 18, the contacts 42b and 42c, and the contacts 44b and 44c are disconnected, respectively, and the heaters 42 and 44 are put into an OFF state with no current flowing from the control unit 30, which is the power source, to the heaters 42 and 44.

In this way, the plasma processing method of this embodiment makes it possible to switch the mask heating unit 40 solely by operating the susceptor 15.

In this embodiment, the same effects as those of the above-described embodiment can be achieved, and furthermore, the heaters 42, 44 installed in the substrate mask portion 31 can directly control the temperature of the substrate mask portion 31, and the temperature of the substrate mask portion 31 can be quickly increased. This has the effect of further preventing the temperature of the substrate mask portion 31 from decreasing.

In addition, in this embodiment, in order to ensure that contacts 42b and 42c, and contacts 44b and 44c, respectively, make contact and disconnect with the up and down movement of susceptor 15, it is necessary for substrate mask portion 31 to maintain a state parallel to upper surface 15a of susceptor 15.
Therefore, it is possible to provide a vertical movement restriction rail or the like for restricting vertical movement of the substrate mask part 31 while maintaining the horizontal position.

In addition, in this embodiment, two heaters 42 and 44 are arranged in the substrate mask part 31 as the mask heating part 40, but the number of heaters is not limited to two. Depending on the width dimension (radial dimension) of the substrate mask part 31, one heater or three or more heaters may be arranged.
In this case, the heaters may be formed concentrically with different radial arrangement dimensions.

A fourth embodiment of the plasma processing apparatus according to the present invention will be described below with reference to the drawings.
FIG. 21 is a schematic enlarged cross-sectional view showing a state in which the substrate mask section is raised in the plasma processing apparatus of this embodiment.
This embodiment differs from the first to third embodiments described above in terms of the mask heating unit, and other configurations corresponding to those of the first to third embodiments described above are given the same reference numerals and descriptions thereof will be omitted.

As shown in FIG. 21, the mask heating unit 40 in this embodiment includes a heater 41 embedded in the mask support unit 33 in the second and third embodiments, and a heater 42, one of two heaters embedded in the substrate mask unit 31 in the third embodiment, which is closest to the inner periphery 31a.

The contact 42 b is disposed inside a recess 42 f provided on the lower surface 31 d of the substrate mask part 31 .
At the same time, the contact 42c is formed so that the height dimension protruding from the upper surface 33c of the mask support portion 33 is greater than that of the contact 42c in the third embodiment.

Here, the height dimension of the contact 42c that protrudes from the upper surface 33c of the mask support portion 33 is set to be equal to the depth dimension of the recess 42f from the lower surface 31d.

As a result, when the substrate mask portion 31 is placed on the mask support portion 33, the lower surface 31d of the substrate mask portion 31 comes into contact with the upper surface 33c of the mask support portion 33 over a large area, and the substrate mask portion 31 can be sufficiently heated by the heater 41 of the mask support portion 33.
At the same time, when the substrate mask part 31 is placed on the mask support part 33, the contacts 42b and 42c are reliably in contact with each other, so that the heater 42 can be energized.

In the plasma processing method of this embodiment, similar to the first embodiment shown in FIG. 4, the mask heating unit 40 is in a heated state in the substrate mask heating step S02, hand-in step S11, hand-down step S12, hand-out step S13, static discharge step S23, susceptor lowering step S24, hand-in step S31, hand-up step S32, and hand-out step S33.

In this embodiment, the substrate mask portion 31 adjacent to the inner periphery 31a, which is rapidly heated when it comes into contact with the susceptor 15, which is a heat source, and is rapidly cooled when it moves away from the susceptor 15, is heated by a heater 42 embedded inside.
At the same time, the outer portion 31 f , which is thicker than the inner periphery 31 a and therefore has a larger heat capacity, is heated by the heater 41 of the mask support portion 33 .
This allows for a simpler structure than in the third embodiment by providing only one heater 42 inside the substrate mask portion 31. At the same time, in areas where temperature fluctuations are severe, the temperature fluctuations can be alleviated by directly heating the substrate mask portion 31.

This embodiment can achieve the same effects as the above-mentioned embodiment.

In this embodiment, the recess 42 f is provided on the lower surface 31 d of the substrate mask part 31 , but the recess 42 f can also be formed on the upper surface 33 c of the mask support part 33 .
In this case, the height dimension of the contact 42b protruding from the lower surface 31d of the substrate mask part 31 can be formed to be larger than that of the contact 42b in the third embodiment.

A fifth embodiment of the plasma processing apparatus according to the present invention will be described below with reference to the drawings.
FIG. 22 is a schematic plan view showing a substrate mask section in the plasma processing apparatus of this embodiment.
This embodiment differs from the third embodiment described above in terms of the mask heating unit, and other components corresponding to those of the third embodiment described above are given the same reference numerals and descriptions thereof will be omitted.

22, the mask heating unit 40 in this embodiment is composed of heaters 42, 44 that are divided in the circumferential direction of the substrate mask unit 31. Furthermore, contacts 42b, 44b are provided at the divided portions, respectively, so that the power supply to each divided heater can be controlled and the amount of heat generated can be individually controlled.
Specifically, the heater 42 is divided near the center of each of the four sides of the rectangular substrate mask portion 31 .

In this embodiment, contacts 42b and 44b are provided at both ends of each divided section so that power can be supplied to each of the four divided heaters. Note that the contacts 42b and 44b on each side can be connected and disconnected in the same way as the contacts in the third embodiment shown in Figures 18 to 20, allowing the supply of power to be switched on and off.

As a result, depending on the conditions inside the vacuum chamber 2, in areas where the temperature has dropped more than in other areas, the power supplied can be increased to increase the amount of heat generated, thereby increasing the amount of heat applied to the substrate mask portion 31.
Furthermore, in the portion where the temperature has not decreased as much as in the other portions, the amount of heat generated can be reduced by reducing the power supplied thereto, thereby suppressing the amount of heat applied to the substrate mask portion 31 .

In this embodiment, the mask heating unit 40 controls the amount of heat generated for each individual region, allowing for more precise suppression of temperature fluctuations in the substrate mask unit 31.

In the mask heating unit 40 of this embodiment, the heaters 42 and 44 are divided at the center positions of the four sides of the substrate mask unit 31, but the present invention is not limited to this configuration and other configurations are possible.
For example, the heaters 42 and 44 can be positioned so as to be symmetrical with respect to a diagonal line connecting the corners of the rectangular substrate mask portion 31. In this case, the divided regions are divided into two, and the temperatures of the respective regions are controlled independently.

Alternatively, the heaters 42 and 44 can be divided at each corner of the rectangular substrate mask portion 31, allowing independent temperature control in each of the four regions corresponding to each side of the rectangle.

FIG. 23 is a schematic plan view showing another example of a substrate mask unit in the plasma processing apparatus of this embodiment.
Furthermore, each side of the rectangular substrate mask portion 31 is divided into heaters 42, 44 each having a length smaller than the length of one side, so that the temperature can be controlled independently in each region of each rectangular side. In this example, each side is divided into two parts.

As shown in Figure 23, the mask heating unit 40 in this embodiment is composed of heaters 42, 44 divided into multiple sections in the circumferential direction of the substrate mask section 31. Furthermore, contacts 42b, 44b are provided on each divided section, allowing the power supply to each divided heater to be controlled and the amount of heat generated to be individually controlled.

In this embodiment, the same effects as those of the above-described embodiment can be achieved, and furthermore, by installing a door valve 26a for transporting the substrate 10, etc., it is possible to suppress the temperature asymmetry generated in the substrate mask portion 31 due to the asymmetry of the internal parts in the vacuum chamber 2. This has the effect of suppressing the generation of particles from areas where the temperature drop is relatively large.

A sixth embodiment of the plasma processing apparatus according to the present invention will be described below with reference to the drawings.
FIG. 24 is a schematic enlarged cross-sectional view showing a state in which the substrate mask unit is lowered in the plasma processing apparatus of this embodiment.
This embodiment differs from the third embodiment described above in terms of the mask heating unit, and other components corresponding to those of the third embodiment described above are given the same reference numerals and descriptions thereof will be omitted.

In this embodiment, as shown in FIG. 24, only one heater 42 is arranged in the substrate mask portion 31. Furthermore, corresponding to the heater 42, a contact 42b is provided on the lower surface 31d of the substrate mask portion 31, and a contact 42c is provided on the upper surface 33c of the mask support portion 33. Note that by using only one heater 42, the substrate mask portion 31 can be applied to a configuration in which the width dimension, i.e., the radial dimension, is small, for example.

In the plasma processing method of this embodiment, similar to the first embodiment shown in FIG. 4, the mask heating unit 40 is in a heated state in the substrate mask heating step S02, hand-in step S11, hand-down step S12, hand-out step S13, static discharge step S23, susceptor lowering step S24, hand-in step S31, hand-up step S32, and hand-out step S33.

In this way, the plasma processing method of this embodiment makes it possible to switch the mask heating unit 40 solely by operating the susceptor 15.

This embodiment can achieve the same effects as the above-described embodiment, and can also achieve the effect of being adaptable to devices in which the substrate 10 to be processed is so small that two heaters 42, 44 cannot be installed within the substrate mask portion 31.

The following describes examples of the present invention.

Here, we conducted a test to confirm the temperature change when a substrate was loaded into the plasma processing apparatus of the present invention.

<Experimental Example 1>
First, a substrate was carried into a conventional plasma processing apparatus not provided with a mask heating section, and the temperature drop at the mask section of the substrate was measured.
The results are shown in Figures 25 and 26.

In FIG. 25, the time when the substrate is loaded is indicated by an arrow.
The substrate mask portion is formed from aluminum.
The temperature of the susceptor was set to 250° C. before the substrate was loaded.
From the results shown in FIG. 25, it can be seen that the temperature in the masked area of the substrate begins to drop from the moment the substrate is carried in.
Furthermore, from the results shown in FIG. 26, it can be seen that the temperature drop in the substrate mask portion also becomes larger as the susceptor temperature increases when the substrate is carried in.

Here, if SiN is used as the film composition for the film formed in the pre-deposition step S01 or the plasma treatment step S22, the thermal expansion coefficient of SiN is as follows. Furthermore, the thermal expansion coefficients of aluminum and alumina, which form the substrate mask portion, are as follows.

SiN; 3.27×10 ⁻⁶ [/K]
Alumina: 7.2×10 ⁻⁶ [/K]
Aluminum: 26.3×10 ⁻⁶ [/K]

As such, if the temperature of the aluminum substrate mask portion drops when the substrate is loaded, the difference in linear expansion coefficient between aluminum and SiN is large, and a temperature drop of more than a certain level will cause the SiN to peel off.

In contrast to this, in a plasma processing apparatus provided with a mask heating section 40 according to the present invention, a substrate was carried in and the temperature drop in the mask section of the substrate was measured.
The results are shown in Figure 27.
From this result, it can be seen that heating the substrate mask portion has eliminated the temperature drop of the substrate mask portion.

As a result, by minimizing temperature changes in the substrate mask, it is possible to suppress film peeling caused by differences in thermal expansion between the substrate mask and the film deposited on it, thereby dramatically reducing particles.

Examples of applications of this invention include not only CVD equipment, but also controlling film peeling from adhesion prevention plates in sputtering deposition equipment, and controlling film deposition on substrate masks in etching equipment.

1... Plasma processing apparatus 2... Vacuum chamber (chamber)
2a...film formation space (reaction chamber)
4...Electrode flange (electrode part)
5...Shower plate (electrode part)
6...gas nozzle 7...gas introduction pipe 9...high frequency power source 10...substrate 10a...processing surface 11...bottom (inner bottom surface)
15...Susceptor (substrate heater part)
15a... upper surface 15c... outer periphery 16... support 16A... lifting drive unit (lifting mechanism)
20... Robot hand 23... High frequency electrode support part 24... Wall part (side wall)
26... Loading/unloading section 26a... Door valve 27... Exhaust pipe 28... Vacuum pump 30... Control section 31... Substrate mask section 31a... Inner periphery 31b... Outer periphery 31c... Upper surface (surface)
31d...lower surface 31e...inclined portion 31f...outer portion 33...mask support portion 33a...tip portion 33b...base end portion 33c...upper surface 40...mask heating portion 41, 42, 44...heaters 41a, 42a, 42d, 44a, 44d...wiring 42b, 42c, 44b, 44c...contact 42f...recess 43...thermal insulation portion 50...temperature detection portion 51, 55...radiation thermometer 52, 56, 56a...detection hole 57...light-transmitting sealing member 101...processing chamber P...plasma

Claims (13)

A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the outer periphery of the substrate and the substrate heater portion relative to the electrode portion; and a mask support portion that is provided around the chamber and supports the substrate mask portion when the substrate heater portion is lowered.
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
the mask heating unit is a heater disposed on the mask support unit along the outer periphery of the substrate mask unit,
the mask support has a thermal insulator disposed at a base adjacent a wall of the chamber;
A plasma processing apparatus characterized in that, when the substrate heater section is lowered and the substrate mask section supported by the mask support section is separated from the substrate heater section, the substrate mask section can be heated by the mask heating section. 2. The plasma processing apparatus according to claim 1 , wherein the mask heating section is a heater embedded in the tip of the mask support section with which the substrate mask section comes into contact. 2. The plasma processing apparatus according to claim 1 , wherein a tip end of the mask support portion is located radially outward from an outer periphery of the substrate heater portion in a plan view. A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the outer periphery of the substrate and the substrate heater portion relative to the electrode portion; and a mask support portion that is provided around the chamber and supports the substrate mask portion when the substrate heater portion is lowered.
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
the mask heating unit is a heater disposed on the substrate mask unit along the outer periphery of the substrate mask unit,
Contacts for energizing the heater of the mask heating unit are disposed on the lower surface of the substrate mask unit and on the upper surface of the mask support unit.
A plasma processing apparatus characterized by: 5. The plasma processing apparatus according to claim 4 , wherein the heater of the mask heating unit is disposed so as to extend around the entire periphery of the substrate mask unit. 5. The plasma processing apparatus according to claim 4 , wherein the heater of the mask heating unit is provided at a position close to the inner periphery of the substrate mask unit. 6. The plasma processing apparatus according to claim 5 , wherein a plurality of said heaters are arranged concentrically around the outer periphery of said substrate mask portion. 5. The plasma processing apparatus according to claim 4 , wherein the contacts protrude downward from the lower surface of the substrate mask portion. 5. The plasma processing apparatus according to claim 4 , wherein the contacts protrude upward from the upper surface of the mask support portion. 5. The plasma processing apparatus according to claim 4 , wherein the outer periphery of the substrate mask portion is located radially outward of the tip of the mask support portion in plan view. A plasma processing apparatus,
a chamber;
an electrode portion disposed in an upper portion of the chamber to form a reaction chamber;
a high frequency power supply connected to the electrode portion to apply a high frequency voltage for forming plasma;
a substrate heater unit that is disposed in a lower portion of the chamber opposite to the electrode unit and that can raise and lower a substrate thereon;
an elevation drive unit that drives the substrate heater unit to elevate;
a substrate mask portion that covers the outer periphery of the substrate and the substrate heater portion relative to the electrode portion; and a mask support portion that is provided around the chamber and supports the substrate mask portion when the substrate heater portion is lowered.
a mask heating unit that heats the substrate mask unit;
a control unit that controls the mask heating unit;
and
when the substrate heater unit is lowered and the substrate mask unit supported by the mask support unit is separated from the substrate heater unit, the substrate mask unit can be heated by the mask heating unit,
The plasma processing apparatus further comprises a temperature detection unit for detecting the temperature of the substrate mask unit. 12. The plasma processing apparatus according to claim 11 , wherein the temperature detection unit detects the temperature of the lower surface of the substrate mask unit. 13. A plasma processing method for performing plasma processing in the plasma processing apparatus according to claim 1 , comprising:
When the substrate mask part is placed on the substrate heater part, the substrate mask part is heated by the substrate heater part;
A plasma processing method, comprising: when the substrate mask section is spaced apart from the substrate heater section, heating the substrate mask section by the mask heating section.