JP7743032B2 - Device incorporating self-destructive element, manufacturing method for device incorporating self-destructive element, and design method for self-destructive element - Google Patents
Device incorporating self-destructive element, manufacturing method for device incorporating self-destructive element, and design method for self-destructive elementInfo
- Publication number
- JP7743032B2 JP7743032B2 JP2020189992A JP2020189992A JP7743032B2 JP 7743032 B2 JP7743032 B2 JP 7743032B2 JP 2020189992 A JP2020189992 A JP 2020189992A JP 2020189992 A JP2020189992 A JP 2020189992A JP 7743032 B2 JP7743032 B2 JP 7743032B2
- Authority
- JP
- Japan
- Prior art keywords
- self
- electrode portion
- destructive element
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Micromachines (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
本発明は、自壊素子が組み込まれたデバイス及び自壊素子が組み込まれたデバイスの製造方法並びに自壊素子の設計方法に関する。 The present invention relates to a device incorporating a self-destructive element, a method for manufacturing a device incorporating a self-destructive element, and a method for designing a self-destructive element.
近年、インターネットに接続して様々なサービスを受けることが可能なデバイスが増加し始めている。このようなデバイスは、ＩｏＴ（Ｉｎｔｅｒｎｅｔ ｏｆ Ｔｈｉｎｇｓ）デバイスと呼ばれている。 In recent years, the number of devices that can connect to the Internet and receive a variety of services has begun to increase. Such devices are called IoT (Internet of Things) devices.
ところで、このようなＩｏＴデバイスのセキュリティ対策は、ソフトウェア側で行われている（例えば、特許文献１参照）。この特許文献１に記載の発明は、動計画情報を予め作成し、監視対象の機器の位置情報が、この行動計画情報と一致しなかった場合、機器をロック状態にすることにより、パスワードが漏洩した後であっても、不正利用者が対象の機器を利用不可能とするというものである。 However, security measures for such IoT devices are implemented on the software side (see, for example, Patent Document 1). The invention described in Patent Document 1 creates action plan information in advance, and if the location information of the device being monitored does not match this action plan information, the device is locked, making it impossible for unauthorized users to use the device, even after the password has been leaked.
しかしながら、ＩｏＴデバイスのセキュリティ対策をソフトウェア側で行うと、ソフトウェア改ざんの恐れがあると共に、ＩｏＴデバイスに対してソフトウェアを用いて自壊するような命令を送信するような場合、誤送信してしまう可能性があるといった脆弱性の問題があった。 However, implementing security measures for IoT devices on the software side raises the risk of software tampering, and there are vulnerabilities such as the possibility of sending commands to IoT devices by mistake, such as self-destructing commands, using software.
また、増加傾向にあるＩｏＴデバイスが、大量に（例えば、数兆個の単位）環境に拡散した場合、役目を終えたＩｏＴデバイスが動作し続けると、様々な箇所で無線の電波が放出し続けることとなる。無線の電波は、電波資源が限られていることから、ある程度の使用時間を経過したＩｏＴデバイスが自壊しなければ、すぐに利用帯域が逼迫するという問題があった。 Furthermore, as IoT devices, which are on the rise, spread throughout the environment in large numbers (for example, in the trillions), wireless radio waves will continue to be emitted in various locations if IoT devices that have outlived their usefulness continue to operate. Because wireless radio wave resources are limited, there is a problem in that unless IoT devices self-destruct after a certain amount of use, the available bandwidth will quickly become congested.
そのため、このような問題に鑑み、近年、ソフトウェアの改ざん操作を回避し、且つ、メンテナンスフリー・回収不要なシステムの実現として、ソフトウェア命令不要なハードウェアの自律的セキュリティ対策の要望が高まってきている。 In light of these issues, there has been a growing demand in recent years for autonomous hardware security measures that do not require software instructions, in order to avoid software tampering and realize maintenance-free, recovery-free systems.
そこで、本発明は、上記問題に鑑み、ハードウェアの自律的セキュリティ対策が可能な自壊素子が組み込まれたデバイス及び自壊素子の設計方法を提供することを目的としている。 In view of the above problems, the present invention aims to provide a device incorporating a self-destructive element capable of implementing autonomous hardware security measures, and a method for designing such a self-destructive element.
上記本発明の目的は、以下の手段によって達成される。なお、括弧内は、後述する実施形態の参照符号を付したものであるが、本発明はこれに限定されるものではない。 The above-mentioned object of the present invention is achieved by the following means. Note that the reference symbols in parentheses are used to refer to embodiments described below, but the present invention is not limited to these.
請求項１に係る自壊素子が組み込まれたデバイスの製造方法は、自壊素子（４）が組み込まれたデバイス（１）の製造方法であって、
前記自壊素子（４）は、可動可能な弾性体（可動電極部４１）を備え、
前記弾性体（可動電極部４１）は、
所定の振動が所定回数加わると、自壊するようにＳ―Ｎ曲線を利用して設計され、
前記Ｓ－Ｎ曲線は、前記自壊素子（４）の疲労破断特性試験を行って求めた振動回数と振動強度の関係を示すものである（図２参照）ことを特徴としている。
The method for manufacturing a device incorporating a self-destructive element according to claim 1 is a method for manufacturing a device (1) incorporating a self-destructive element (4),
The self-destructive element (4) includes a movable elastic body (movable electrode portion 41),
The elastic body (movable electrode portion 41) is
It is designed using an S-N curve to self-destruct when a certain number of vibrations are applied.
The SN curve is characterized in that it shows the relationship between the number of vibrations and the vibration intensity obtained by carrying out a fatigue fracture characteristic test on the self-destructive element (4) (see FIG. 2).
また、請求項２に係る自壊素子が組み込まれたデバイスの製造方法は、上記請求項１に記載の自壊素子（４）が組み込まれたデバイス（１）の製造方法において、前記自壊素子（４）は、半導体集積回路（３）に供給されている電源（Ｖ）とグラウンド（Ｇ）間に設けられてなることを特徴としている。 In addition, the manufacturing method of a device incorporating a self-destructive element according to claim 2 is characterized in that in the manufacturing method of a device (1) incorporating a self-destructive element (4) according to claim 1, the self-destructive element (4) is provided between a power supply (V) and a ground (G) supplied to a semiconductor integrated circuit (3).
他方、請求項３に係る自壊素子の設計方法は、可動可能な弾性体（可動電極部４１）を備えた自壊素子（４）を設計するにあたって、
前記自壊素子（４）の疲労破断特性試験を行い振動回数と振動強度の関係を示すＳ－Ｎ曲線を作成した上で、該Ｓ－Ｎ曲線を用いて、所定の振動が所定回数加わると、前記弾性体（可動電極部４１）が自壊するように設計してなることを特徴としている。
一方、請求項４に係る自壊素子が組み込まれたデバイスは、容量素子や抵抗素子などの素子を有する半導体集積回路（３）と、
前記半導体集積回路（３）に供給されている電源（Ｖ）とグラウンド（Ｇ）との間に設けられるように前記半導体集積回路（３）上に形成され、前記半導体集積回路（３）と前記電源（Ｖ）と前記グラウンド（Ｇ）とが電気的に接続される状態となるように、信号をスルーする役割を担うＭＥＭＳ構造体の自壊素子（４）とを備え、
前記自壊素子（４）は、
前記半導体集積回路（３）上に固定された固定電極部（４０）と、
前記固定電極部（４０）と間隔を隔てて設けられ、少なくとも環境振動で振動する可動電極部（４１）と、から構成され、
前記可動電極部（４１）は、選定した該可動電極部（４１）の形状や材料、並びに、前記半導体集積回路（３）の振動の加速度および前記可動電極部（４１）の質量に基づく振動の強度に応じた所定の振動回数で破断し、
前記可動電極部（４１）が破断すると、前記半導体集積回路（３）に対する前記電源（Ｖ）と前記グラウンド（Ｇ）との電気的な接続が切断されるようになっていることを特徴としている。
On the other hand, the design method of the self-destructive element according to claim 3 includes the steps of: designing a self-destructive element (4) having a movable elastic body (movable electrode portion 41);
A fatigue fracture characteristic test is conducted on the self-destructive element (4) to create an SN curve showing the relationship between the number of vibrations and the vibration intensity, and then, using the SN curve, the elastic body (movable electrode part 41) is designed to self-destruct when a predetermined number of vibrations are applied.
On the other hand, a device incorporating a self-destructive element according to claim 4 comprises a semiconductor integrated circuit (3) having elements such as a capacitance element and a resistance element;
a self-destructive element (4) of a MEMS structure that is formed on the semiconductor integrated circuit (3) so as to be provided between a power supply (V) supplied to the semiconductor integrated circuit (3) and a ground (G) , and that serves to pass a signal so that the semiconductor integrated circuit (3), the power supply (V), and the ground (G) are electrically connected ;
The self-destructing element (4) is
a fixed electrode portion (40) fixed on the semiconductor integrated circuit (3);
a movable electrode portion (41) provided at an interval from the fixed electrode portion (40) and vibrating at least in response to environmental vibrations;
The movable electrode portion (41) breaks at a predetermined number of vibrations corresponding to the selected shape and material of the movable electrode portion (41), as well as the vibration intensity based on the vibration acceleration of the semiconductor integrated circuit (3) and the mass of the movable electrode portion (41) ,
When the movable electrode portion (41) breaks, the electrical connection between the power supply (V) and the ground (G) for the semiconductor integrated circuit (3) is cut off .
次に、本発明の効果について、図面の参照符号を付して説明する。なお、括弧内は、後述する実施形態の参照符号を付したものであるが、本発明はこれに限定されるものではない。 Next, the effects of the present invention will be explained using reference numbers in the drawings. Note that the reference numbers in parentheses are those of the embodiments described below, but the present invention is not limited to these.
請求項１，３，４に係る発明によれば、ソフトウェアを使用せずとも、自壊素子（４）に所定の振動が所定回数加わると、可動電極部（４１）が自壊するように設計されているから、ソフトウェアによる改ざん（破壊解除命令の執行等）は不可能となり、もって、ハードウェアの自律的セキュリティ対策が可能となる。 According to the inventions of claims 1, 3 and 4 , the movable electrode part (41) is designed to self-destruct when a predetermined number of vibrations are applied to the self-destruct element (4) without using software, so tampering by software (such as executing a command to release destruction) becomes impossible, thereby enabling autonomous hardware security measures.
また、請求項２に係る発明によれば、自壊素子（４）は、半導体集積回路（３）に供給されている電源（Ｖ）とグラウンド（Ｇ）間に設けられているから、半導体集積回路（３）の機能を確実に果たせなくすることができ、もって、自壊素子が組み込まれたデバイス（１）を、確実に物理的に使用不能にすることができる。 Furthermore, according to the invention of claim 2, the self-destructive element (4) is provided between the power supply (V) and ground (G) supplied to the semiconductor integrated circuit (3), thereby reliably disabling the semiconductor integrated circuit (3) from functioning, thereby reliably rendering the device (1) incorporating the self-destructive element physically unusable.
以下、本発明に係る自壊素子が組み込まれたデバイス及び自壊素子の設計方法を、図面を参照して具体的に説明する。なお、以下の説明において、上下左右の方向を示す場合は、図示正面から見た場合の上下左右をいうものとする。 The following describes in detail a device incorporating a self-destructive element according to the present invention, and a method for designing a self-destructive element, with reference to the drawings. Note that in the following description, when referring to directions such as up, down, left, and right, they refer to the directions as viewed from the front of the illustration.
図１に示すように、本実施形態に係る自壊素子が組み込まれたデバイス１は、図１（ａ）に示すようなものである。より詳しく説明すると、自壊素子が組み込まれたデバイス１は、基板２と、半導体集積回路３と、自壊素子４と、で主に構成されている。基板２は、図１（ａ）に示すように矩形状に形成され、例えばシリコン基板などにて形成されている。 As shown in Figure 1, device 1 incorporating the self-destructive element of this embodiment is as shown in Figure 1(a). Explaining in more detail, device 1 incorporating the self-destructive element is mainly composed of substrate 2, semiconductor integrated circuit 3, and self-destructive element 4. Substrate 2 is formed in a rectangular shape as shown in Figure 1(a), and is formed from, for example, a silicon substrate.
一方、半導体集積回路３は、図１（ａ）に示すように、基板２上に形成されており、容量素子、抵抗素子やメモリセルなど、種々の素子を有しているものである。 On the other hand, as shown in Figure 1(a), the semiconductor integrated circuit 3 is formed on the substrate 2 and includes various elements such as capacitance elements, resistance elements, and memory cells.
自壊素子４は、図１（ａ）に示すように、半導体集積回路３上に形成されており、半導体製造技術による微細加工を施して形成された微小構造であるＭＥＭＳ構造体で形成されている。このようにＭＥＭＳ構造体で形成されている自壊素子４は、図１（ａ）に示すように、半導体集積回路３上に固定されている固定電極部４０と、固定電極部４０と間隔を隔てて設けられた可動電極部４１とで構成されており、可動電極部４１は、支持部４２に弾性可能に支持されることにより、可動可能になっている。 As shown in Figure 1(a), the self-destructive element 4 is formed on the semiconductor integrated circuit 3 and is made of a MEMS structure, which is a microstructure formed through microfabrication using semiconductor manufacturing technology. As shown in Figure 1(a), the self-destructive element 4 formed of a MEMS structure in this way is composed of a fixed electrode portion 40 fixed on the semiconductor integrated circuit 3 and a movable electrode portion 41 provided at a distance from the fixed electrode portion 40, and the movable electrode portion 41 is movable as it is elastically supported by a support portion 42.
ところで、上記のように構成される自壊素子４は、図１（ｂ）に示すように、矢印Ｙ方向に、所定の振動が所定回数加わると、自壊素子４の可動電極部４１が破断（自壊）するように設計されているものである。この点、より詳しく説明すると、自壊素子４は、図２に示すＳ―Ｎ曲線を利用して設計されている。すなわち、図２に示すＳ－Ｎ曲線は、自壊素子４の疲労破断特性試験を行って求めた振動回数と振動強度の関係を示すものである。このＳ－Ｎ曲線は、図２に示すように左側に行くほど、振動強度が強くなり、少ない振動回数で可動電極部４１が破断、すなわち、短寿命で可動電極部４１が自壊することを示している。他方で、このＳ－Ｎ曲線は、図２に示すように右側に行くほど、振動強度が弱くなり、多大な振動回数で可動電極部４１が破断、すなわち、長寿命で可動電極部４１が自壊することを示している。しかるに、このようなＳ－Ｎ曲線を利用すれば、図１（ｂ）に示すように、矢印Ｙ方向に、所定の振動が所定回数加われば、可動電極部４１が破断（自壊）するように設計することができる。具体的に説明すると、半導体集積回路３上に自壊素子４を形成するにあたって、半導体集積回路３の振動の加速度と、可動電極部４１の質量によって振動の強度を算定することができる。そのため、振動の強度が算定できれば、図２に示すＳ－Ｎ曲線を利用し、可動電極部４１にどの程度の振動回数が加われば破断（自壊）するようにするかの設計が可能となる。 The self-destructive element 4 configured as described above is designed so that the movable electrode portion 41 of the self-destructive element 4 breaks (self-destructs) when a predetermined number of vibrations are applied in the direction of arrow Y, as shown in Figure 1(b). To explain this in more detail, the self-destructive element 4 is designed using the S-N curve shown in Figure 2. That is, the S-N curve shown in Figure 2 shows the relationship between the number of vibrations and the vibration intensity obtained by conducting a fatigue fracture characteristic test on the self-destructive element 4. As shown in Figure 2, the S-N curve indicates that the vibration intensity increases toward the left, resulting in the movable electrode portion 41 breaking at a low number of vibrations, i.e., the movable electrode portion 41 self-destructing after a short lifespan. On the other hand, as shown in Figure 2, the S-N curve indicates that the vibration intensity decreases toward the right, resulting in the movable electrode portion 41 breaking at a high number of vibrations, i.e., the movable electrode portion 41 self-destructing after a long lifespan. However, by using such an S-N curve, it is possible to design the movable electrode portion 41 to break (self-destruct) when a predetermined number of vibrations are applied in the direction of the arrow Y, as shown in Figure 1(b). More specifically, when forming the self-destructive element 4 on the semiconductor integrated circuit 3, the vibration intensity can be calculated from the acceleration of the vibration of the semiconductor integrated circuit 3 and the mass of the movable electrode portion 41. Therefore, if the vibration intensity can be calculated, it is possible to use the S-N curve shown in Figure 2 to design how many vibrations the movable electrode portion 41 must have to break (self-destruct).
ところで、上記のような半導体集積回路３等の周囲の環境による振動は、環境振動といい、図２に示す領域Ｒ２に該当する領域である。一方、図２に示す領域Ｒ１は、強制振動といい、例えば、静電引力による振動をいうものである。このような静電引力による振動は、人為的に与えることが可能で、自壊素子４に電圧をかけることにより、可動電極部４１に対して周期的な静電引力を生じさせることができる。これにより、可動電極部４１に対して、周期的に静電引力による振動が加わることとなり、もって、可動電極部４１が破断（自壊）することとなる。しかして、このようにすれば、簡単容易に強制的に可動電極部４１を破断（自壊）させることが可能となる。 Vibrations caused by the environment surrounding the semiconductor integrated circuit 3, etc., as described above, are called environmental vibrations, and are the region corresponding to region R2 shown in Figure 2. Region R1 shown in Figure 2, on the other hand, is called forced vibrations, which are vibrations caused by, for example, electrostatic attraction. Such vibrations caused by electrostatic attraction can be artificially applied, and by applying a voltage to the self-destructive element 4, a periodic electrostatic attraction can be generated on the movable electrode portion 41. This causes periodic vibrations caused by electrostatic attraction to be applied to the movable electrode portion 41, which causes the movable electrode portion 41 to break (self-destruct). This makes it possible to simply and easily force the movable electrode portion 41 to break (self-destruct).
ところで、図２に示すようなＳ－Ｎ曲線を作成するにあたっては、まず、自壊素子４の材料・形状を選定し製造する。そして、その製造された自壊素子４に対して、人工的にある強度で振動を与えると、何回の振動で可動電極部４１が破断（自壊）したのかの実験を行う。次いで、強度を変え、上記と同一の自壊素子４に対して、人工的に振動を与え、何回の振動で可動電極部４１が破断（自壊）したのかの実験を行う。しかして、このように強度を変更していき、何回の振動で可動電極部４１が破断（自壊）したのかの実験を繰り返し行うようにすれば、可動電極部４１が破断（自壊）した振動強度に対する振動回数をプロット（描画）することができることとなり、もって、図２に示すような、Ｓ－Ｎ曲線を作成することができる。なお、Ｓ－Ｎ曲線は、選定する材料・形状によって変化することが知られているから、この点を考慮して、自壊素子４を設計するにあたっては、実験の際、選定した材料・形状によって設計するのが好ましい。 To create an S-N curve like the one shown in Figure 2, first select and manufacture the material and shape of the self-destructive element 4. Then, an experiment is conducted to determine how many vibrations are required to break (self-destruct) the movable electrode portion 41 when the manufactured self-destructive element 4 is artificially subjected to vibrations at a certain intensity. Next, the intensity is changed, and the same self-destructive element 4 is artificially subjected to vibrations to determine how many vibrations are required to break (self-destruct). By repeatedly changing the intensity in this way and determining how many vibrations are required to break (self-destruct) the movable electrode portion 41, it is possible to plot (draw) the number of vibrations versus the vibration intensity at which the movable electrode portion 41 breaks (self-destructs), thereby creating an S-N curve like the one shown in Figure 2. It is known that S-N curves change depending on the material and shape selected. Taking this into consideration, it is preferable to design the self-destructive element 4 based on the material and shape selected during the experiment.
かくして、このように設計された自壊素子４は、ＭＥＭＳ構造体が本来備えているセンサ機能を有しておらず、通常は、何の役割も果たさず、信号をスルーするだけの役割でしかない。具体的には、図１（ｃ）に示すように、自壊素子４は、半導体集積回路３に供給されている電源ＶとグラウンドＧ間に設けられるように、半導体集積回路３上に形成されている（図１（ａ）参照）。 The self-destructive element 4 designed in this way does not have the sensor function inherent in MEMS structures, and normally serves no purpose other than passing signals through. Specifically, as shown in Figure 1(c), the self-destructive element 4 is formed on the semiconductor integrated circuit 3 so as to be located between the power supply V supplied to the semiconductor integrated circuit 3 and ground G (see Figure 1(a)).
しかして、このようにすれば、自壊素子が組み込まれたデバイス１は、自壊素子４が信号をスルーするだけであるから、半導体集積回路３は、図１（ｃ）に示す電源Ｖと、グラウンドＧとが電気的に接続されている状態となる。それゆえ、半導体集積回路３は、何の問題もなく、自身が担っている機能を発揮させることとなる。この状態で、図１（ｂ）に示すように、矢印Ｙ方向に所定の振動が所定回数加わり、自壊素子４の可動電極部４１が破断（自壊）すると、自壊素子４は信号をスルーすることができなくなる。それゆえ、半導体集積回路３に対する、図１（ｃ）に示す電源Ｖと、グラウンドＧとの電気的な接続が切断されるせることとなるから、半導体集積回路３は、機能を果たせなくなり、自壊素子が組み込まれたデバイス１は、物理的に使用不能となる。 In this way, in device 1 incorporating a self-destructive element, the self-destructive element 4 simply passes signals through, and the semiconductor integrated circuit 3 is electrically connected to the power supply V and ground G shown in Figure 1(c). Therefore, the semiconductor integrated circuit 3 performs its intended function without any problems. In this state, as shown in Figure 1(b), if a predetermined number of vibrations are applied in the direction of arrow Y, as shown in Figure 1(b), and the movable electrode portion 41 of the self-destructive element 4 breaks (self-destructs), the self-destructive element 4 will no longer be able to pass signals through. Therefore, the electrical connection between the semiconductor integrated circuit 3 and the power supply V and ground G shown in Figure 1(c) is severed, and the semiconductor integrated circuit 3 will no longer be able to function, and the device 1 incorporating the self-destructive element will become physically unusable.
しかして、以上説明した本実施形態によれば、ソフトウェアを使用せずとも、自壊素子４に所定の振動が所定回数加わると、自壊素子４の可動電極部４１が破断（自壊）するように設計されているから、ソフトウェアによる改ざん（破壊解除命令の執行等）は不可能となり、もって、ハードウェアの自律的セキュリティ対策が可能となる。これにより、ソフトウェアのセキュリティ対策による脆弱性の問題を解決することができ、さらには、無線の電波の利用帯域が逼迫するという問題も解決することができる。 However, according to the embodiment described above, the movable electrode portion 41 of the self-destructive element 4 is designed to break (self-destruct) when a predetermined number of vibrations are applied to the self-destructive element 4, even without using software. This makes it impossible to tamper with the self-destructive element 4 (such as by executing a command to cancel destruction), thereby enabling autonomous hardware security measures. This not only solves the problem of vulnerabilities caused by software security measures, but also solves the problem of limited wireless radio wave bandwidth usage.
また、本実施形態によれば、このような自壊素子４を、半導体集積回路３に供給されている電源ＶとグラウンドＧ間に設けるようにしているから、半導体集積回路３の機能を確実に果たせなくすることができ、もって、自壊素子が組み込まれたデバイス１を、確実に物理的に使用不能にすることができる。 Furthermore, according to this embodiment, such a self-destructive element 4 is provided between the power supply V supplied to the semiconductor integrated circuit 3 and ground G, which reliably disables the semiconductor integrated circuit 3 from functioning, thereby reliably rendering the device 1 incorporating the self-destructive element physically unusable.
さらに、本実施形態によれば、自壊素子４を、センサ機能を有していないＭＥＭＳ構造体にて形成しているから、自壊素子４自体は通常は何の役割も果たさないため、自壊素子４を、任意の箇所に配置することが可能となる。 Furthermore, according to this embodiment, the self-destructive element 4 is formed from a MEMS structure that does not have a sensor function, and therefore the self-destructive element 4 itself does not normally play any role, making it possible to place the self-destructive element 4 in any location.
しかしながら、自壊素子４を、センサ機能を有しているＭＥＭＳ構造体で形成するようにすることもできる。このようにすれば、自壊素子４の可動電極部４１が破断（自壊）すれば、センサ機能が機能しなくなり、もって、自壊素子が組み込まれたデバイス１を物理的に使用不能にすることができる。 However, the self-destructive element 4 can also be formed from a MEMS structure that has a sensor function. In this way, if the movable electrode portion 41 of the self-destructive element 4 breaks (self-destructs), the sensor function will no longer function, thereby physically rendering the device 1 in which the self-destructive element is incorporated unusable.
なお、本実施形態において示した形状等はあくまで一例であり、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。例えば、本実施形態においては、自壊素子４として、ＭＥＭＳ構造体を例に説明したが、それに限らず、可動電極部４１のように、可動可能な弾性体を備えたものであれば、どのような素子でも良い。 Note that the shapes and other features shown in this embodiment are merely examples, and various modifications and variations are possible within the scope of the gist of the present invention as described in the claims. For example, in this embodiment, a MEMS structure is used as an example of the self-destructive element 4, but this is not limiting, and any element that has a movable elastic body, such as the movable electrode portion 41, may be used.
また、本実施形態においては、半導体集積回路３上に自壊素子４を形成するようにしたが、それに限らず、半導体集積回路３と自壊素子４とをワイヤボンディング等で電気的に接続するようにしても良い。 Furthermore, in this embodiment, the self-destructive element 4 is formed on the semiconductor integrated circuit 3, but this is not limiting; the semiconductor integrated circuit 3 and the self-destructive element 4 may also be electrically connected by wire bonding or the like.
ところで、本実施形態における自壊素子が組み込まれたデバイス１は、物理センサ、化学センサ、マイクロアクチューエータ、振動発電素子等、様々なデバイスに適用可能である。 By the way, the device 1 incorporating the self-destructive element of this embodiment can be applied to a variety of devices, such as physical sensors, chemical sensors, microactuators, and vibration-generated power generation elements.
１ 自壊素子が組み込まれたデバイス
３ 半導体集積回路
４ 自壊素子
４１ 可動電極部（可動可能な弾性体）
Ｖ 電源
Ｇ グラウンド
1 Device incorporating self-destructive element 3 Semiconductor integrated circuit 4 Self-destructive element 41 Movable electrode part (movable elastic body)
V Power supply G Ground
Claims (4)
前記自壊素子は、
固定電極部と、
前記固定電極部と間隔を隔てて設けられた可動可能な可動電極部と、を有するＭＥＭＳ構造体で形成され、
前記可動電極部は、
所定の振動が所定回数加わると、自壊するようにＳ―Ｎ曲線を利用して設計され、
前記Ｓ－Ｎ曲線は、前記自壊素子の疲労破断特性試験を行って求めた振動回数と振動強度の関係を示すものである自壊素子が組み込まれたデバイスの製造方法。 A method for manufacturing a device incorporating a self-destructive element, comprising:
The self-destructing element is
A fixed electrode portion;
The electrode assembly is formed of a MEMS structure having a movable electrode portion provided at an interval from the fixed electrode portion,
The movable electrode portion is
It is designed using an S-N curve to self-destruct when a certain number of vibrations are applied.
The SN curve indicates the relationship between the number of vibrations and the vibration intensity obtained by carrying out a fatigue fracture characteristic test on the self-destructive element. A method for manufacturing a device incorporating a self-destructive element.
前記固定電極部と間隔を隔てて設けられた可動可能な可動電極部と、を有するＭＥＭＳ構造体で形成された自壊素子を設計するにあたって、
前記自壊素子の疲労破断特性試験を行い振動回数と振動強度の関係を示すＳ－Ｎ曲線を作成した上で、該Ｓ－Ｎ曲線を用いて、所定の振動が所定回数加わると、前記可動電極部が自壊するように設計してなる自壊素子の設計方法。 A fixed electrode portion;
When designing a self-destructive element formed of a MEMS structure having a movable electrode portion provided at an interval from the fixed electrode portion,
A design method for a self-destructive element in which a fatigue fracture characteristic test is conducted on the self-destructive element to create an SN curve showing the relationship between the number of vibrations and the vibration intensity, and then the SN curve is used to design the movable electrode part so that it self-destructs when a predetermined number of vibrations are applied.
前記半導体集積回路に供給されている電源とグラウンドとの間に設けられるように前記半導体集積回路上に形成され、前記半導体集積回路と前記電源と前記グラウンドとが電気的に接続される状態となるように、信号をスルーする役割を担うＭＥＭＳ構造体の自壊素子とを備え、
前記自壊素子は、
前記半導体集積回路上に固定された固定電極部と、
前記固定電極部と間隔を隔てて設けられ、少なくとも環境振動で振動する可動電極部と、から構成され、
前記可動電極部は、選定した該可動電極部の形状や材料、並びに、前記半導体集積回路の振動の加速度および前記可動電極部の質量に基づく振動の強度に応じた所定の振動回数で破断し、
前記可動電極部が破断すると、前記半導体集積回路に対する前記電源と前記グラウンドとの電気的な接続が切断されるようになっている自壊素子が組み込まれたデバイス。 a semiconductor integrated circuit having elements such as a capacitance element and a resistance element;
a self-destructive element of a MEMS structure that is formed on the semiconductor integrated circuit so as to be provided between a power supply supplied to the semiconductor integrated circuit and a ground , and that serves to pass a signal so that the semiconductor integrated circuit, the power supply, and the ground are electrically connected ;
The self-destructing element is
a fixed electrode portion fixed on the semiconductor integrated circuit;
a movable electrode portion provided at an interval from the fixed electrode portion and vibrating at least in response to environmental vibrations;
the movable electrode portion breaks after a predetermined number of vibrations corresponding to the selected shape and material of the movable electrode portion, as well as the vibration intensity based on the acceleration of the vibration of the semiconductor integrated circuit and the mass of the movable electrode portion ;
A device incorporating a self-destructing element that, when the movable electrode portion breaks, cuts off the electrical connection between the power supply and the ground for the semiconductor integrated circuit .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020189992A JP7743032B2 (en) | 2020-11-16 | 2020-11-16 | Device incorporating self-destructive element, manufacturing method for device incorporating self-destructive element, and design method for self-destructive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020189992A JP7743032B2 (en) | 2020-11-16 | 2020-11-16 | Device incorporating self-destructive element, manufacturing method for device incorporating self-destructive element, and design method for self-destructive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022079047A JP2022079047A (en) | 2022-05-26 |
| JP7743032B2 true JP7743032B2 (en) | 2025-09-24 |
Family
ID=81707394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020189992A Active JP7743032B2 (en) | 2020-11-16 | 2020-11-16 | Device incorporating self-destructive element, manufacturing method for device incorporating self-destructive element, and design method for self-destructive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7743032B2 (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005079604A (en) | 2003-08-29 | 2005-03-24 | Sony Corp | Signal transmission device |
| JP2010054651A (en) | 2008-08-27 | 2010-03-11 | Panasonic Corp | Optical scanner |
| JP2012070120A (en) | 2010-09-22 | 2012-04-05 | Panasonic Corp | Sensor |
| JP2012513078A (en) | 2008-12-22 | 2012-06-07 | オーストリアマイクロシステムズ アクチエンゲゼルシャフト | Semiconductor chip package and manufacturing method thereof |
| CN103378056A (en) | 2012-04-12 | 2013-10-30 | 北京理工大学 | Integrated circuit chip-level self-destructive method based on MEMS metal bridge transducer element structure and structure thereof |
| JP2015123511A (en) | 2013-12-25 | 2015-07-06 | ソニー株式会社 | Electronic devices, fuses and electronic equipment |
| JP2016111014A (en) | 2014-11-27 | 2016-06-20 | 株式会社半導体エネルギー研究所 | Storage battery having flexibility and electronic apparatus |
| JP2018124589A (en) | 2018-05-08 | 2018-08-09 | 北陽電機株式会社 | Metal elastic member and micro mechanical device |
| JP2018167565A (en) | 2017-03-30 | 2018-11-01 | 三菱日立パワーシステムズ株式会社 | 3D additive manufacturing method and 3D additive manufacturing apparatus |
| CN111739850A (en) | 2020-07-09 | 2020-10-02 | 中国人民解放军92228部队 | A self-destructing chip embedded with an energy-containing film and a preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10261359A (en) * | 1997-03-18 | 1998-09-29 | Sanyo Electric Co Ltd | Semiconductor device |
-
2020
- 2020-11-16 JP JP2020189992A patent/JP7743032B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005079604A (en) | 2003-08-29 | 2005-03-24 | Sony Corp | Signal transmission device |
| JP2010054651A (en) | 2008-08-27 | 2010-03-11 | Panasonic Corp | Optical scanner |
| JP2012513078A (en) | 2008-12-22 | 2012-06-07 | オーストリアマイクロシステムズ アクチエンゲゼルシャフト | Semiconductor chip package and manufacturing method thereof |
| JP2012070120A (en) | 2010-09-22 | 2012-04-05 | Panasonic Corp | Sensor |
| CN103378056A (en) | 2012-04-12 | 2013-10-30 | 北京理工大学 | Integrated circuit chip-level self-destructive method based on MEMS metal bridge transducer element structure and structure thereof |
| JP2015123511A (en) | 2013-12-25 | 2015-07-06 | ソニー株式会社 | Electronic devices, fuses and electronic equipment |
| JP2016111014A (en) | 2014-11-27 | 2016-06-20 | 株式会社半導体エネルギー研究所 | Storage battery having flexibility and electronic apparatus |
| JP2018167565A (en) | 2017-03-30 | 2018-11-01 | 三菱日立パワーシステムズ株式会社 | 3D additive manufacturing method and 3D additive manufacturing apparatus |
| JP2018124589A (en) | 2018-05-08 | 2018-08-09 | 北陽電機株式会社 | Metal elastic member and micro mechanical device |
| CN111739850A (en) | 2020-07-09 | 2020-10-02 | 中国人民解放军92228部队 | A self-destructing chip embedded with an energy-containing film and a preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022079047A (en) | 2022-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102322257B1 (en) | Microphone and manufacturing method thereof | |
| US8766706B2 (en) | Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same | |
| JP7001411B2 (en) | Pre-adjusted self-extinguishing substrate | |
| US7767482B1 (en) | Microelectromechanical systems having stored charge and methods for fabricating and using same | |
| JP6542918B2 (en) | MEMS microphone | |
| JP6264969B2 (en) | Acoustic transducer | |
| KR101672628B1 (en) | Single diaphragm transducer structure | |
| EP3457082B1 (en) | Sensor device | |
| US20070024403A1 (en) | MEMS switch actuated by the electrostatic force and piezoelectric force | |
| JP7743032B2 (en) | Device incorporating self-destructive element, manufacturing method for device incorporating self-destructive element, and design method for self-destructive element | |
| JP2011218462A (en) | Mems device | |
| JP2015123511A (en) | Electronic devices, fuses and electronic equipment | |
| US9187311B2 (en) | MEMS device and method of manufacturing the same | |
| EP1396727A4 (en) | SILICON COMPONENT | |
| CN107010593B (en) | MEMS device and multilayer structure | |
| CN101419868B (en) | A micromechanical latch switch device | |
| CN114430520A (en) | Packaging structure of micro loudspeaker | |
| KR101080981B1 (en) | Switching element and switching circuit responding to acceleration | |
| KR20070040727A (en) | Angular velocity sensor | |
| CN112573474B (en) | Microluminescent diode detection device, device and preparation method | |
| CN107078000A (en) | Firm micro-electromechanical switch | |
| JP4718931B2 (en) | Internal switch based on MEMS | |
| KR102357419B1 (en) | Printed circuit board and Electronic parts having the same | |
| US20140203883A1 (en) | Resonator, oscillator, and method for fabricating oscillator | |
| JP2008282889A (en) | Vibration structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231113 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20240805 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240820 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241003 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241206 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250115 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250430 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250527 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250829 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250903 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7743032 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |