JP7746203B2 - Eddy current flaw detection equipment - Google Patents
Eddy current flaw detection equipmentInfo
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- JP7746203B2 JP7746203B2 JP2022044277A JP2022044277A JP7746203B2 JP 7746203 B2 JP7746203 B2 JP 7746203B2 JP 2022044277 A JP2022044277 A JP 2022044277A JP 2022044277 A JP2022044277 A JP 2022044277A JP 7746203 B2 JP7746203 B2 JP 7746203B2
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Description
本発明の実施形態は、渦電流探傷装置に関する。 An embodiment of the present invention relates to an eddy current flaw detector.
渦電流探傷は被検査体として導電性材料を対象とし、交流電源から交流電流をコイルに供給して被検査体の表面近傍に渦電流を誘起し、この渦電流が作る反作用磁場をコイルで検出している。仮に、被検査体の表面近傍に欠陥が存在すると、この欠陥により渦電流の流れが変化して、渦電流が作る反作用磁場の強度や分布が変化するので、欠陥の有無を検出することができる。 Eddy current testing targets conductive materials as the test object, and involves supplying an alternating current from an AC power source to a coil to induce eddy currents near the surface of the test object, which then detects the reactive magnetic field created by these eddy currents. If a defect is present near the surface of the test object, this defect will change the flow of eddy currents, which in turn will change the strength and distribution of the reactive magnetic field created by the eddy currents, making it possible to detect the presence or absence of a defect.
この渦電流探傷のコイルとして、フレキシブル基板に導線のコイルパターンをプリントした薄膜コイルを用いる場合がある。この薄膜コイルは、可撓性が高い基板を用いているため、被検査体の表面の曲面に柔軟に沿わせることができ、高感度での探傷を実現できる利点がある。 The coil used in this eddy current flaw detection is sometimes a thin-film coil, with a conductor coil pattern printed on a flexible substrate. Because this thin-film coil uses a highly flexible substrate, it can flexibly conform to the curved surface of the object being inspected, which has the advantage of enabling highly sensitive flaw detection.
薄膜コイルを用いた渦電流探傷では、従来の導線を巻回した立体的なコイルよりも薄膜コイルの巻線数が少ないため、渦電流密度が制約を受け、使用環境次第では信号対雑音比(SN比)低下の課題がある。この課題を改善するために、特許文献1には、複数枚の薄膜コイルを積層して、渦電流密度や反作用磁場の検出性を高める装置構成が開示されているが、このような装置構成では、薄膜コイルの利点である柔軟性が低下してしまう。 In eddy current flaw detection using thin-film coils, the number of windings in the thin-film coil is smaller than in conventional three-dimensional coils made of wound conductor wire, which limits eddy current density and poses the issue of a reduced signal-to-noise ratio (S/N ratio) depending on the usage environment. To address this issue, Patent Document 1 discloses an equipment configuration that stacks multiple thin-film coils to improve the detectability of eddy current density and reaction magnetic fields, but this equipment configuration reduces the flexibility that is one of the advantages of thin-film coils.
本発明の実施形態は、上述の事情を考慮してなされたものであり、薄膜コイルの柔軟性を確保しつつ、被検査体に誘起する渦電流の渦電流密度を高めることができる渦電流探傷装置を提供することを目的とする。 Embodiments of the present invention have been made in consideration of the above circumstances, and aim to provide an eddy current flaw detector that can increase the eddy current density of eddy currents induced in an object under test while ensuring the flexibility of the thin-film coil.
本発明の実施形態における渦電流探傷装置は、可撓性の基板の両面に電流経路となる導線が設けられた薄膜コイルを渦電流探傷プローブに備えた渦電流探傷装置であって、前記導線は、前記薄膜コイルの中心近傍と外周近傍とで前記薄膜コイルの単位幅当たりの導線数が異なって設定されると共に、前記薄膜コイルの平面視で前記基板の両面において同一形状で且つ同一位置に設けられたことを特徴とするものである。 An eddy current flaw detection device in an embodiment of the present invention is an eddy current flaw detection device having an eddy current flaw detection probe equipped with a thin film coil having conductors that serve as current paths on both sides of a flexible substrate, wherein the conductors are set so that the number of conductors per unit width of the thin film coil is different near the center and near the periphery of the thin film coil, and are arranged in the same shape and at the same position on both sides of the substrate when viewed in a plane.
本発明の実施形態によれば、薄膜コイルの柔軟性を確保しつつ、被検査体に誘起する渦電流の渦電流密度を高めることができる。 According to an embodiment of the present invention, it is possible to increase the eddy current density of the eddy current induced in the object under test while maintaining the flexibility of the thin-film coil.
以下、本発明を実施するための形態を、図面に基づき説明する。
[A]第1実施形態(図1、図2)
図1は、第1実施形態に係る渦電流探傷装置を示す構成図である。この図1に示す渦電流探傷装置10は、導電性材料からなる被検査体1の表面近傍に渦電流を誘起し、この渦電流が作る反作用磁場の変化に基づいて被検査体1の欠陥を検出するものであり、薄膜コイル13を備えた渦電流探傷プローブ11と、この渦電流探傷プローブ11に接続された渦電流探傷データ収集器12と、を有して構成される。
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[A] First embodiment (FIGS. 1 and 2)
Fig. 1 is a configuration diagram showing an eddy current flaw detection device according to the first embodiment. The eddy current flaw detection device 10 shown in Fig. 1 induces eddy currents near the surface of an object 1 to be inspected, which is made of a conductive material, and detects defects in the object 1 based on changes in the reaction magnetic field created by the eddy currents. The eddy current flaw detection device 10 includes an eddy current flaw detection probe 11 equipped with a thin-film coil 13, and an eddy current flaw detection data collector 12 connected to the eddy current flaw detection probe 11.
渦電流探傷プローブ11は、被検査体1の表面に設置される。通常、この渦電流探傷プローブ11内の被検査体1に最も近い位置に薄膜コイル13が取り付けられる。また、渦電流探傷データ収集器12は、渦電流探傷プローブ11内の薄膜コイル13に交流電流を供給して、被検査体1の表面近傍に渦電流を誘起させると共に、この渦電流が作り薄膜コイル13により検出される反作用磁場の変化を、渦電流探傷データとして収集する機能を有する。 The eddy current testing probe 11 is placed on the surface of the object under test 1. Typically, a thin-film coil 13 is attached to the eddy current testing probe 11 at a position closest to the object under test 1. The eddy current testing data collector 12 supplies an alternating current to the thin-film coil 13 in the eddy current testing probe 11 to induce eddy currents near the surface of the object under test 1, and collects the changes in the reaction magnetic field created by these eddy currents and detected by the thin-film coil 13 as eddy current testing data.
薄膜コイル13は、図2に示すように、可撓性の基板14の両面(表面14A及び裏面14B)に、電流経路となる導線15が例えば螺旋状(即ちスパイラル状、渦巻状)にプリント等により設けられて構成される。この基板14の表面14Aと裏面14Bに設けられる導線15は同一形状である。この導線15自体の幅と、導線15と導線15との隙間である導線間隔16には最小製作限界が存在するため、薄膜コイル13における導線15の巻線数は制約を受ける。 As shown in Figure 2, the thin-film coil 13 is constructed by providing conductor wires 15, which serve as current paths, on both sides (front surface 14A and back surface 14B) of a flexible substrate 14, for example, in a spiral (i.e., whorl) shape, by printing or the like. The conductor wires 15 provided on the front surface 14A and back surface 14B of the substrate 14 have the same shape. There are minimum manufacturing limits for the width of the conductor wires 15 themselves and the conductor spacing 16, which is the gap between the conductor wires 15, so the number of turns of the conductor wire 15 in the thin-film coil 13 is limited.
上記制約を前提としつつ、導線15は、薄膜コイル13の中心近傍と外周近傍とで、薄膜コイル13の単位幅当たりの導線数である巻線数が異なって設定される。なお、図2中の符号Wは薄膜コイル13の幅方向を示す。これにより、薄膜コイル13の中心近傍と外周近傍とで導線15の導線間隔16に疎密が生じる。この導線間隔16の疎密は、渦電流探傷の用途に応じて設定される。 Based on the above constraints, the number of turns of the conductor 15, which is the number of conductor wires per unit width of the thin-film coil 13, is set to be different near the center and the periphery of the thin-film coil 13. Note that the symbol W in Figure 2 indicates the width direction of the thin-film coil 13. This results in variations in the conductor spacing 16 of the conductor 15 near the center and the periphery of the thin-film coil 13. The conductor spacing 16 is set according to the application of eddy current flaw detection.
例えば、薄膜コイル13の中心近傍から外周近傍まで全体的に高い渦電流密度を被検査体1に与える必要があるときには、図2に示すように、薄膜コイル13の外周近傍の導線間隔16を中心近傍の導線間隔16よりも密にする。すると、薄膜コイル13の外周近傍では、導線15の巻線数の増加に伴い高い磁束密度の磁束が発生する。このため、薄膜コイル13の中心近傍から外周近傍までの全体に対応する被検査体1の位置に、高い渦電流密度の渦電流を誘起することが可能になる。 For example, when it is necessary to apply a high eddy current density to the object under test 1 from near the center to near the periphery of the thin-film coil 13, the conductor spacing 16 near the periphery of the thin-film coil 13 is made denser than the conductor spacing 16 near the center, as shown in Figure 2. As a result, a magnetic flux with a high magnetic flux density is generated near the periphery of the thin-film coil 13 as the number of turns of the conductor 15 increases. This makes it possible to induce eddy currents with a high eddy current density at a position on the object under test 1 corresponding to the entire area from near the center to near the periphery of the thin-film coil 13.
また、薄膜コイル13の中心近傍に集中した高い渦電流密度を被検査体1に与える必要があるときには、薄膜コイル13の中心近傍の導線間隔16を外周近傍の導線間隔16よりも密にする。すると、薄膜コイル13の中心近傍では、導線15の巻線数の増加に伴い高い磁束密度の磁束が発生する。このため、薄膜コイル13の中心近傍に対応した被検査体1の位置に、集中した高い渦電流密度の渦電流を誘起することが可能になる。 Furthermore, when it is necessary to apply a high eddy current density concentrated near the center of the thin-film coil 13 to the object under test 1, the conductor spacing 16 near the center of the thin-film coil 13 is made denser than the conductor spacing 16 near the periphery. As a result, a magnetic flux with a high magnetic flux density is generated near the center of the thin-film coil 13 as the number of turns of the conductor 15 increases. This makes it possible to induce eddy currents with a high eddy current density concentrated at a position on the object under test 1 corresponding to the vicinity of the center of the thin-film coil 13.
更に、薄膜コイル13の導線15は、薄膜コイル13の平面視で、基板14の両面(表面14A及び裏面14B)における同一位置に設けられる。これにより、特許文献1に記載のように薄膜コイルを積層することなく、導線15の巻線数を基板14の片面(表面14Aまたは裏面14B)の2倍に増加させることが可能になる。従って、薄膜コイル13が発生する磁束の磁束密度も、基板14の片面に導線15が設けられる場合に比べて2倍程度高くなる。 Furthermore, the conductor 15 of the thin-film coil 13 is provided at the same position on both sides (front surface 14A and back surface 14B) of the substrate 14 when viewed from above. This makes it possible to double the number of turns of the conductor 15 compared to one side (front surface 14A or back surface 14B) of the substrate 14 without stacking the thin-film coil as described in Patent Document 1. Therefore, the magnetic flux density of the magnetic flux generated by the thin-film coil 13 is also about twice as high as when the conductor 15 is provided on one side of the substrate 14.
以上のように構成されたことから、本第1実施形態によれば、次の効果(1)及び(2)を奏する。
(1)渦電流探傷プローブ11の薄膜コイル13は、可撓性を有する基板14の両面(表面14A及び裏面14B)に電流経路となる導線15が螺旋状に設けられて形成される。これにより、薄膜コイル13は、被検査体1に対する柔軟性を確保しつつ、発生する磁束の磁束密度を高めて被検査体1に誘起する渦電流の渦電流密度を高めることができる。この結果、薄膜コイル13の柔軟性の特徴を生かしつつ、高い信号対雑音比(SN比)で渦電流探傷を実現することができる。
As configured as above, the first embodiment provides the following effects (1) and (2).
(1) The thin-film coil 13 of the eddy current testing probe 11 is formed by providing a conductor 15, which serves as a current path, in a spiral shape on both sides (front surface 14A and back surface 14B) of a flexible substrate 14. This allows the thin-film coil 13 to increase the magnetic flux density of the generated magnetic flux and increase the eddy current density of the eddy current induced in the test object 1 while ensuring flexibility with respect to the test object 1. As a result, eddy current testing can be achieved with a high signal-to-noise ratio (S/N ratio) while taking advantage of the flexibility of the thin-film coil 13.
(2)薄膜コイル13は、その中心近傍と外周近傍で、薄膜コイル13の単位幅当たりの導線15の巻線数が異なって、導線間隔16に疎密が設けられる。この導線間隔16が密な領域では、導線15の巻線数の増加に伴い磁束密度の高い磁束が発生する。これにより、薄膜コイル13では、導線間隔16を密に設定した所望位置の磁束密度を高めた磁束密度分布を得ることができると共に、この薄膜コイル13の所望位置に対応した被検査体1の位置に高い渦電流密度の渦電流を誘起できる。この結果、薄膜コイル13の柔軟性の特徴を生かしつつ、高い信号対雑音比(SN比)で渦電流探傷を実現することができる。 (2) The thin-film coil 13 has different numbers of windings of the conductor 15 per unit width near its center and near its periphery, resulting in varying densities in the conductor spacing 16. In areas where the conductor spacing 16 is dense, a magnetic flux with high magnetic flux density is generated as the number of windings of the conductor 15 increases. As a result, the thin-film coil 13 can obtain a magnetic flux density distribution with increased magnetic flux density at the desired position where the conductor spacing 16 is set dense, and can induce eddy currents with high eddy current density at the position on the object under test 1 corresponding to the desired position on the thin-film coil 13. As a result, eddy current testing can be achieved with a high signal-to-noise ratio (S/N ratio) while taking advantage of the flexibility of the thin-film coil 13.
[B]第2実施形態(図3)
図3は、第2実施形態に係る渦電流探傷装置の渦電流探傷プローブに設けられた薄膜コイルを示し、(A)が平面図、(B)が図3(A)のIII-III線に沿う断面図である。この第2実施形態において第1実施形態と同様な部分については、第1実施形態と同一の符号を付すことにより説明を簡略化し、または省略する。
[B] Second embodiment (FIG. 3)
3A and 3B show a thin-film coil provided in an eddy current flaw detection probe of an eddy current flaw detection device according to a second embodiment, with (A) being a plan view and (B) being a cross-sectional view taken along line III-III in Fig. 3A. In this second embodiment, parts similar to those in the first embodiment are designated by the same reference numerals as in the first embodiment, and their explanations will be simplified or omitted.
本第2実施形態の渦電流探傷装置20(図1)が第1実施形態と異なる点は、渦電流探傷プローブ21(図1)が備える薄膜コイル22では、基板14の片面(例えば表面14A)に設けられた導線15の一部の長さの導線23が、基板14の他の片面(例えば裏面14B)にプリント等により設けられた点である。 The eddy current flaw detection device 20 (Figure 1) of this second embodiment differs from the first embodiment in that the thin-film coil 22 provided in the eddy current flaw detection probe 21 (Figure 1) has a conductor 23 of a partial length of the conductor 15 provided on one side (e.g., front surface 14A) of the substrate 14, which is provided on the other side (e.g., back surface 14B) of the substrate 14 by printing or the like.
つまり、導線23は、基板14の例えば表面14Aに設けられた導線15の中心側または外周側(図3では中心側)の一部が削除された形状であり、薄膜コイル22の平面視で導線15と同一位置に設けられる。更に、導線23は、導線15と同様に、薄膜コイル22の中心近傍と外周近傍とで巻線数が異なって設定されて、導線23の導線間隔24に疎密が設けられてもよい。 In other words, the conductor 23 has a shape in which a portion of the central or outer periphery (central side in FIG. 3 ) of the conductor 15 provided on, for example, the surface 14A of the substrate 14 has been removed, and is provided in the same position as the conductor 15 in a plan view of the thin-film coil 22. Furthermore, like the conductor 15, the number of windings of the conductor 23 may be set differently near the center and the outer periphery of the thin-film coil 22, and the conductor spacing 24 of the conductor 23 may vary in density.
以上のように構成されたことから、本第2実施形態によれば、第1実施形態の効果(1)及び(2)と同様な効果を奏するほか、次の効果(3)を奏する。 As configured as described above, the second embodiment achieves the same effects as effects (1) and (2) of the first embodiment, as well as the following effect (3).
(3)薄膜コイル22では、基板14の例えば表面14Aに設けられた導線15の一部の長さの導線23が、基板14の例えば裏面14Bに設けられている。このため、薄膜コイル22の表裏の全体として、薄膜コイル22の単位幅当たりの導線15及び23の巻線数が、薄膜コイル22の中心近傍と外周近傍とで異なることになる。この結果、薄膜コイル22の表裏の全体として、導線15及び23の巻線数の多い領域に高い磁束密度の磁束を発生させることができるので、第1実施形態の効果(2)を更に高めることができる。 (3) In the thin-film coil 22, a conductor 23 having a length equivalent to a portion of the conductor 15 provided on, for example, the front surface 14A of the substrate 14 is provided on, for example, the back surface 14B of the substrate 14. As a result, the number of turns of the conductors 15 and 23 per unit width of the thin-film coil 22 varies between the center and the periphery of the thin-film coil 22 across the entire front and back surfaces of the thin-film coil 22. As a result, a magnetic flux with a high magnetic flux density can be generated in the areas with a large number of turns of the conductors 15 and 23 across the entire front and back surfaces of the thin-film coil 22, further enhancing the effect (2) of the first embodiment.
[C]第3実施形態(図4)
図4は、第3実施形態に係る渦電流探傷装置の渦電流探傷プローブに設けられた薄膜コイルを示し、(A)が平面図、(B)が図4(A)のIV-IV線に沿う断面図である。この第3実施形態において第1実施形態と同様な部分については、第1実施形態と同一の符号を付すことにより説明を簡略化し、または省略する。
[C] Third embodiment (FIG. 4)
4A and 4B show a thin-film coil provided in an eddy current flaw detection probe of an eddy current flaw detection device according to a third embodiment, with (A) being a plan view and (B) being a cross-sectional view taken along line IV-IV in Fig. 4A. In this third embodiment, parts similar to those in the first embodiment are designated by the same reference numerals as in the first embodiment, and their explanations will be simplified or omitted.
本第3実施形態の渦電流探傷装置30(図1)が第1実施形態と異なる点は、渦電流探傷プローブ31(図1)が備える薄膜コイル32では、この薄膜コイル32の平面視で、基板14の片面(例えば表面14A)に設けられた導線33の隙間(即ち導線間隔35)に対応して、基板14の他の片面(例えば裏面14B)に導線34が設けられた点である。 The eddy current flaw detection device 30 (Figure 1) of this third embodiment differs from the first embodiment in that the thin-film coil 32 provided in the eddy current flaw detection probe 31 (Figure 1) has a conductor 34 provided on one side (e.g., back side 14B) of the substrate 14 in a plan view of the thin-film coil 32, corresponding to the gap (i.e., conductor spacing 35) between the conductors 33 provided on one side (e.g., front side 14A) of the substrate 14.
つまり、導線33と導線34は、薄膜コイル32の平面視で基板14の両面(表面14A及び裏面14B)の異なった位置に設けられている。本第3実施形態では、導線33は、基板14の例えば表面14Aに導線間隔35が等間隔の状態で螺旋状にプリント等により設けられる。また、導線34は、薄膜コイル32の中心近傍または外周近傍(図4では外周近傍)における導線33の導線間隔35に対応して、基板14の例えば裏面14Bにプリント等により設けられる。 In other words, the conductors 33 and 34 are provided at different positions on both surfaces (front surface 14A and back surface 14B) of the substrate 14 when viewed from above the thin-film coil 32. In the third embodiment, the conductors 33 are provided by printing or the like in a spiral shape on, for example, the front surface 14A of the substrate 14, with equal conductor spacing 35. Furthermore, the conductors 34 are provided by printing or the like on, for example, the back surface 14B of the substrate 14, corresponding to the conductor spacing 35 of the conductors 33 near the center or periphery of the thin-film coil 32 (near the periphery in Figure 4).
これにより、薄膜コイル32では、表裏の全体として、導線34が設けられた領域では、薄膜コイル32の平面視で導線33及び34の導線間隔が密に設定され、導線34が設けられていない領域では、薄膜コイル32の平面視で導線33及び34の導線間隔が疎に設定される。この導線33及び34の導線間隔の疎密は、薄膜コイル32の用途に応じて設定される。 As a result, in the area where the conductor 34 is provided on both the front and back sides of the thin-film coil 32, the conductor spacing between the conductors 33 and 34 is set densely in a planar view of the thin-film coil 32, and in the area where the conductor 34 is not provided, the conductor spacing between the conductors 33 and 34 is set sparsely in a planar view of the thin-film coil 32. The conductor spacing between the conductors 33 and 34 is set according to the application of the thin-film coil 32.
例えば、薄膜コイル32の中心近傍から外周近傍まで全体的に高い渦電流密度を被検査体1に与える必要があるときには、図4に示すように、薄膜コイル32の外周近傍における導線33の導線間隔35に対応して、基板14の例えば裏面14Bに導線34を設ける。これにより、薄膜コイル32の表裏の全体として、薄膜コイル32の外周近傍における導線33及び34の導線間隔を、中心近傍における導線33及び34の導線間隔よりも密に設定する。このため、薄膜コイル32の外周近傍では、導線33及び34の巻線数の増加に伴い高い磁束密度の磁束が発生する。従って、薄膜コイル32の中心近傍から外周近傍までの全体に対応する被検査体1の位置に、高い渦電流密度の渦電流を誘起することが可能になる。 For example, when it is necessary to apply a high eddy current density to the device under test 1 from near the center to near the periphery of the thin-film coil 32, as shown in FIG. 4, conductors 34 are provided on, for example, the back surface 14B of the substrate 14, corresponding to the conductor spacing 35 of the conductors 33 near the periphery of the thin-film coil 32. As a result, the conductor spacing between the conductors 33 and 34 near the periphery of the thin-film coil 32 is set closer across the entire front and back of the thin-film coil 32 than the conductor spacing between the conductors 33 and 34 near the center. Therefore, near the periphery of the thin-film coil 32, magnetic flux with a high magnetic flux density is generated as the number of turns of the conductors 33 and 34 increases. Therefore, it is possible to induce eddy currents with a high eddy current density at a position on the device under test 1 corresponding to the entire area from near the center to near the periphery of the thin-film coil 32.
また、薄膜コイル32の中心近傍に集中した高い渦電流密度を被検査体1に与える必要があるときには、薄膜コイル32の中心近傍における導線33の導線間隔35に対応して、基板14の例えば裏面14Bに導線34を設ける。これにより、薄膜コイル32の表裏の全体として、薄膜コイル32の中心近傍における導線33及び34の導線間隔を、外周近傍における導線33及び34の導線間隔よりも密に設定する。このため、薄膜コイル32の中心近傍では、導線33及び34の巻線数の増加に伴い高い磁束密度の磁束が発生する。従って、薄膜コイル32の中心近傍に対応する被検査体1の位置に、集中した高い渦電流密度の渦電流を誘起することが可能になる。 Furthermore, when it is necessary to apply a high eddy current density concentrated near the center of the thin-film coil 32 to the device under test 1, conductors 34 are provided on, for example, the back surface 14B of the substrate 14, corresponding to the conductor spacing 35 of the conductors 33 near the center of the thin-film coil 32. As a result, the conductor spacing between the conductors 33 and 34 near the center of the thin-film coil 32 is set closer on both the front and back surfaces of the thin-film coil 32 than the conductor spacing between the conductors 33 and 34 near the periphery. Therefore, near the center of the thin-film coil 32, magnetic flux with a high magnetic flux density is generated as the number of turns of the conductors 33 and 34 increases. Therefore, it is possible to induce eddy currents with a high eddy current density concentrated at a position on the device under test 1 corresponding to the vicinity of the center of the thin-film coil 32.
以上のように構成されたことから、本第3実施形態によれば、第1実施形態の効果(1)と同様な効果を奏するほか、次の効果(4)を奏する。 As configured as described above, the third embodiment achieves the same effect as effect (1) of the first embodiment, as well as the following effect (4).
(4)薄膜コイル32では、この薄膜コイル32の平面視で、基板14の片面(例えば表面14A)に設けられた導線33の導線間隔35に対応して、基板14の他の片面(例えば裏面14B)に導線34が設けられている。このため、薄膜コイル32では、表裏の全体として、導線34が設けられた領域では、薄膜コイル32の平面視で導線33及び34の導線間隔が密になり、導線34が設けられていない領域では、薄膜コイル32の平面視で導線33及び34の導線間隔が疎になる。言い換えると、薄膜コイル32の表裏の全体として、薄膜コイル32の単位幅当たりの導線33及び34の巻線数が、薄膜コイル32の中心近傍と外周近傍で異なることになる。 (4) In the thin-film coil 32, the conductors 34 are provided on one side (e.g., the back side 14B) of the substrate 14 in a plan view that corresponds to the conductor spacing 35 of the conductors 33 provided on one side (e.g., the front side 14A) of the substrate 14. Therefore, in the area where the conductors 34 are provided, the conductor spacing between the conductors 33 and 34 is dense in the plan view of the thin-film coil 32, while in the area where the conductors 34 are not provided, the conductor spacing between the conductors 33 and 34 is sparse in the plan view of the thin-film coil 32. In other words, in the area where the conductors 34 are provided, the number of windings of the conductors 33 and 34 per unit width of the thin-film coil 32 differs between the center and the periphery of the thin-film coil 32.
このため、薄膜コイル32の表裏の全体として、導線33及び34の巻線数の多い領域(導線33及び34の導線間隔が密な領域)に、高い磁束密度の磁束を発生させることができる。この結果、第1実施形態の効果(2)と同様に、導線33及び34の導線間隔を密に設定した薄膜コイル32の所望位置の磁束密度を高めた磁束密度分布を得ることができると共に、上記所望位置に対応する被検査体1の位置に、高い渦電流密度の渦電流を誘起させて高SN比の渦電流探傷を実現することができる。 As a result, a magnetic flux with a high magnetic flux density can be generated in areas where the number of windings of the conductors 33 and 34 is large (areas where the conductor spacing of the conductors 33 and 34 is dense) on both the front and back of the thin-film coil 32 as a whole. As a result, similar to effect (2) of the first embodiment, a magnetic flux density distribution with an increased magnetic flux density can be obtained at the desired position of the thin-film coil 32 where the conductor spacing of the conductors 33 and 34 is set densely, and eddy currents with a high eddy current density can be induced at the position of the inspected object 1 corresponding to the desired position, thereby achieving eddy current testing with a high signal-to-noise ratio.
(D)第4実施形態(図5)
図5は、第4実施形態に係る渦電流探傷装置の渦電流探傷プローブに設けられた薄膜コイルを示し、(A)が平面図、(B)が図5(A)のV-V線に沿う断面図である。この第4実施形態において第1実施形態と同様な部分については、第1実施形態と同一の符号を付すことにより説明を簡略化し、または省略する。
(D) Fourth embodiment (FIG. 5)
5A and 5B show a thin-film coil provided in an eddy current flaw detection probe of an eddy current flaw detection device according to a fourth embodiment, with (A) being a plan view and (B) being a cross-sectional view taken along line V-V in Fig. 5A. In this fourth embodiment, parts that are the same as those in the first embodiment are given the same reference numerals as in the first embodiment, and descriptions thereof will be simplified or omitted.
本第4実施形態の渦電流探傷装置40(図1)が第1実施形態と異なる点は、渦電流探傷プローブ41(図1)が備える薄膜コイル42では、この薄膜コイル42の基板14内に磁性体層43が設けられた点である。 The eddy current flaw detection device 40 (Figure 1) of this fourth embodiment differs from the first embodiment in that the thin-film coil 42 provided in the eddy current flaw detection probe 41 (Figure 1) has a magnetic layer 43 provided within the substrate 14 of the thin-film coil 42.
磁性体層43は、鉄等の強磁性体からなる強磁性体層が好ましい。また、磁性体層43を構成する材料は、基板14の可撓性を損なわないように、例えば磁性流体や磁性粉末が好ましい。薄膜コイル42は、基板14内の磁性体層43に磁束が集中することで、高い磁束密度の磁束を発生させることが可能になる。 The magnetic layer 43 is preferably a ferromagnetic layer made of a ferromagnetic material such as iron. Furthermore, the material that makes up the magnetic layer 43 is preferably a magnetic fluid or magnetic powder, for example, so as not to impair the flexibility of the substrate 14. The thin-film coil 42 is able to generate magnetic flux with a high magnetic flux density by concentrating magnetic flux in the magnetic layer 43 within the substrate 14.
以上のように構成されたことから、本第4実施形態においても、第1実施形態の効果(1)及び(2)と同様な効果を奏するほか、次の効果(5)を奏する。 As configured as described above, the fourth embodiment also achieves the same effects as effects (1) and (2) of the first embodiment, as well as the following effect (5).
(5)薄膜コイル42では、可撓性を有する基板14内に磁性体層43が設けられたことから、薄膜コイル42で発生した磁束を磁性体層43に集中させることができる。このため、薄膜コイル42は、被検査体1に対する柔軟性を確保しつつ、磁束密度を高めて薄膜コイル42の近傍の被検査体1に高い密度の渦電流を誘起させることができ、高いSN比での渦電流探傷を実現することができる。 (5) In the thin-film coil 42, the magnetic layer 43 is provided within the flexible substrate 14, so the magnetic flux generated by the thin-film coil 42 can be concentrated in the magnetic layer 43. As a result, the thin-film coil 42 can increase the magnetic flux density and induce high-density eddy currents in the test object 1 near the thin-film coil 42 while maintaining flexibility relative to the test object 1, thereby achieving eddy current testing with a high signal-to-noise ratio.
以上、本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これらの実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更、組み合わせを行うことができ、また、それらの置き換えや変更、組み合わせは、発明の範囲や要旨に含まれると共に、特許請求の範囲に記載された発明とその均等の範囲に含まれる。 Although several embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in a variety of other forms, and various omissions, substitutions, changes, and combinations can be made without departing from the spirit of the invention. Furthermore, such substitutions, changes, and combinations are included within the scope and spirit of the invention, as well as within the scope of the invention and its equivalents as set forth in the claims.
例えば、第1~第4実施形態の薄膜コイル13、22、32及び42では、基板14に導線15、23、33、34が螺旋状に設けられる場合を述べたが、これらの導線15、23、33、34はパルス形状に設けられてもよい。この場合には、第1、第2及び第4実施形態において、導線15、23は、薄膜コイル13、22、42の中心近傍と外周近傍とで、この薄膜コイル13、22、42の単位幅当たりの導線数が異なって設定されることになる。 For example, in the first to fourth embodiments, the thin-film coils 13, 22, 32, and 42 are described as having the conductors 15, 23, 33, and 34 spirally arranged on the substrate 14. However, these conductors 15, 23, 33, and 34 may also be arranged in a pulsed pattern. In this case, in the first, second, and fourth embodiments, the number of conductors 15, 23 per unit width of the thin-film coils 13, 22, and 42 is set differently near the center and near the periphery of the thin-film coils 13, 22, and 42.
1…被検査体、10…渦電流探傷装置、11…渦電流探傷プローブ、13…薄膜コイル、14…基板、14A…表面、14B…裏面、15…導線、16…導線間隔、20…渦電流探傷装置、21…渦電流探傷プローブ、22…薄膜コイル、23…導線、24…導線間隔、30…渦電流探傷装置、31…渦電流探傷プローブ、32…薄膜コイル、33、34…導線、35…導線間隔、40…渦電流探傷装置、41…渦電流探傷プローブ、42…薄膜コイル、43…磁性体層 1...Subject, 10...Eddy current flaw detection device, 11...Eddy current flaw detection probe, 13...Thin-film coil, 14...Substrate, 14A...Front surface, 14B...Back surface, 15...Conductor, 16...Wire spacing, 20...Eddy current flaw detection device, 21...Eddy current flaw detection probe, 22...Thin-film coil, 23...Conductor, 24...Wire spacing, 30...Eddy current flaw detection device, 31...Eddy current flaw detection probe, 32...Thin-film coil, 33, 34...Conductor, 35...Wire spacing, 40...Eddy current flaw detection device, 41...Eddy current flaw detection probe, 42...Thin-film coil, 43...Magnetic layer
Claims (4)
前記導線は、前記薄膜コイルの中心近傍と外周近傍とで前記薄膜コイルの単位幅当たりの導線数が異なって設定されると共に、前記薄膜コイルの平面視で前記基板の両面において同一形状で且つ同一位置に設けられたことを特徴とする渦電流探傷装置。 An eddy current flaw detection device including an eddy current flaw detection probe having a thin film coil in which conductor wires serving as current paths are provided on both sides of a flexible substrate,
An eddy current flaw detection device characterized in that the number of conductors per unit width of the thin-film coil is set differently near the center and near the periphery of the thin-film coil, and the conductors are arranged in the same shape and at the same position on both sides of the substrate when viewed in a plane.
前記導線は、前記薄膜コイルの中心近傍と外周近傍とで前記薄膜コイルの単位幅当たりの導線数が異なって設定されると共に、
前記基板の片面に設けられた前記導線の一部の長さの前記導線は、前記基板の他の片面に設けられ、前記薄膜コイルの平面視で、前記片面に設けられた前記導線の一部の長さと同一形状で且つ同一位置に設けられたことを特徴とする渦電流探傷装置。 An eddy current flaw detection device including an eddy current flaw detection probe having a thin film coil in which conductor wires serving as current paths are provided on both sides of a flexible substrate,
The number of the conductors per unit width of the thin-film coil is set to be different between the vicinity of the center of the thin-film coil and the vicinity of the outer periphery of the thin-film coil, and
An eddy current flaw detection device characterized in that the conductor of a partial length provided on one side of the substrate is provided on the other side of the substrate, and is provided in the same shape and at the same position as the partial length of the conductor provided on one side when viewed in a plane of the thin-film coil.
前記薄膜コイルの平面視で、前記基板の片面に設けられた前記導線の隙間に対応して、前記基板の他の片面に前記導線が設けられる領域で、前記片面及び前記他の片面の前記導線の隙間が密になり、前記他の片面に前記導線が設けられない領域で、前記片面及び前記他の片面の前記導線の隙間が疎になることで、
前記薄膜コイルにおける前記基板の前記片面と前記他の片面の全体として、前記薄膜コイルの中心近傍と外周近傍とで、前記薄膜コイルの単位幅当たりの導線数が異なって設定されたことを特徴とする渦電流探傷装置。 An eddy current flaw detection device including an eddy current flaw detection probe having a thin film coil in which conductor wires serving as current paths are provided on both sides of a flexible substrate,
In a plan view of the thin-film coil, in a region where the conductors are provided on one side of the substrate, the gaps between the conductors on one side and the other side are dense, corresponding to the gaps between the conductors on the other side of the substrate, and in a region where the conductors are not provided on the other side, the gaps between the conductors on the one side and the other side are sparse,
An eddy current flaw detection device characterized in that the number of wires per unit width of the thin film coil is set differently near the center and near the periphery of the thin film coil, across the entire one side and the other side of the substrate in the thin film coil.
4. The eddy current flaw detector according to claim 1, wherein a magnetic layer is provided within the substrate.
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