JP7748296B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

The present invention relates to a substrate processing method and a substrate processing apparatus.

The substrate processing apparatus described in Patent Document 1 includes a processing tank, a substrate holding unit, a fluid supply unit, and a control unit. The processing tank stores a processing liquid for processing substrates. The substrate holding unit holds a substrate in the processing liquid in the processing tank. The fluid supply unit supplies a fluid to the processing tank. The fluid is a gas. The control unit controls the fluid supply unit. The control unit controls the fluid supply unit so that the fluid supply unit changes the fluid supply between the start of supplying the fluid to the processing tank storing the processing liquid in which the substrate is immersed and the end of supplying the fluid to the processing tank storing the processing liquid in which the substrate is immersed.

Japanese Patent Application Laid-Open No. 2020-47885

However, in the substrate processing apparatus described in Patent Document 1, the processing liquid is phosphoric acid. In other words, the processing liquid is acidic.

Meanwhile, the inventors of the present application have discovered a new finding: when the processing liquid is alkaline, the dissolved oxygen concentration in the processing liquid may affect the processing of the substrate. Therefore, the inventors of the present application have focused on processing substrates with an alkaline processing liquid.

The present invention was made in consideration of the above-mentioned problems, and its purpose is to provide a substrate processing method and substrate processing apparatus that can effectively process substrates using an alkaline processing liquid.

According to one aspect of the present invention, a substrate processing method is performed by a substrate processing apparatus. The substrate processing apparatus includes a processing tank and a bubble supply pipe disposed inside the processing tank. The substrate processing method includes an immersion step and a bubble supply step. In the immersion step, a substrate is immersed in an alkaline processing liquid stored in the processing tank. In the bubble supply step, while the substrate is immersed in the alkaline processing liquid, bubbles are supplied from below the substrate to the alkaline processing liquid through each of a plurality of bubble holes provided in the bubble supply pipe.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a plate disposed below the bubble supply pipe inside the processing tank. It is preferable that the method further includes a processing liquid introduction step of introducing the alkaline processing liquid into the processing tank upward through a plurality of processing liquid holes provided in the plate while the alkaline processing liquid is stored in the processing tank.

In one aspect of the present invention, the substrate processing apparatus preferably includes a plurality of the bubble supply pipes. It is preferable that the apparatus further includes a bubble adjustment process for adjusting the bubbles for each of the bubble supply pipes.

In one aspect of the present invention, in the bubble supplying step, it is preferable to supply gas to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes. In the bubble adjusting step, it is preferable to adjust the bubbles for each of the bubble supply pipes by controlling a control target for adjusting the bubbles for each of the bubble supply pipes. It is preferable that the control target includes at least one of the flow rate of the gas, the timing of supplying the gas, and the period of supplying the gas.

In one aspect of the present invention, in the bubble adjustment step, it is preferable that the control target is controlled for each bubble supply pipe based on a physical quantity that indicates a treatment amount of the substrate before the substrate is immersed in the alkaline treatment liquid.
In one aspect of the present invention, in the bubble adjustment step, it is preferable to adjust the distribution of bubbles on the surface of the substrate by controlling the control target for each bubble supply pipe based on a distribution of physical quantities that indicate the amount of treatment of the substrate before the substrate is immersed in the alkaline treatment solution.

In one aspect of the present invention, in the bubble supply process, it is preferable that gas is supplied to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline treatment liquid through the bubble holes. In the bubble adjustment process, it is preferable that the bubbles are adjusted for each of the bubble supply pipes using a trained model constructed by training training data. The training data preferably includes pre-immersion treatment information and post-immersion treatment information. The pre-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate before immersion in the alkaline treatment liquid. The post-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate after immersion in the alkaline treatment liquid and removal from the alkaline treatment liquid. It is preferable that the training data further include at least one of flow rate information indicating the flow rate of the gas, timing information indicating the timing of gas supply, and period information indicating the period of gas supply when the training target substrate is immersed in the alkaline treatment liquid. In the bubble adjustment process, input information is preferably input to the trained model, and output information is preferably obtained from the trained model. The input information preferably includes information on physical quantities indicating the amount of processing of the substrate before immersion in the alkaline treatment liquid. The output information preferably includes information indicating a control target. The control target preferably includes at least one of the flow rate of the gas, the timing of supplying the gas, and the duration of supplying the gas when the substrate is immersed in the alkaline treatment liquid. In the bubble adjustment process, the bubbles are preferably adjusted based on the output information.

In one aspect of the present invention, in the bubble supply process, it is preferable that gas is supplied to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline treatment liquid through the bubble holes. In the bubble adjustment process, it is preferable that the bubbles are adjusted for each of the bubble supply pipes using a trained model constructed by training training data. The training data preferably includes pre-immersion treatment information and post-immersion treatment information. The pre-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate before immersion in the alkaline treatment liquid. The post-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate after immersion in the alkaline treatment liquid and removal from the alkaline treatment liquid. It is preferable that the training data further include at least one of flow rate information indicating the flow rate of the gas, timing information indicating the timing of gas supply, and period information indicating the period of gas supply when the training target substrate is immersed in the alkaline treatment liquid. In the bubble adjustment process, input information is preferably input to the trained model, and output information is preferably obtained from the trained model. The input information preferably includes information on physical quantities indicating the amount of processing of the substrate before immersion in the alkaline treatment liquid, and information indicating a control target. The control target preferably includes at least one of the flow rate of the gas, the timing of supplying the gas, and the duration of supplying the gas when the substrate is immersed in the alkaline treatment liquid. The output information preferably includes information indicating the results of clustering the input information. In the bubble adjustment process, the control target is preferably controlled based on the output information.

In one aspect of the present invention, the bubble supply pipe is preferably hydrophilic.

In one aspect of the present invention, the material of the bubble supply pipe is preferably quartz or polyether ether ketone.

According to another aspect of the present invention, a substrate processing apparatus includes a processing tank, a substrate holding unit, and a bubble supply unit. The processing tank stores an alkaline processing liquid. The substrate holding unit holds a substrate and immerses the substrate in the alkaline processing liquid stored in the processing tank. The bubble supply unit has a plurality of bubble holes and is disposed inside the processing tank. While the substrate is immersed in the alkaline processing liquid, the bubble supply unit supplies bubbles from each of the plurality of bubble holes to the alkaline processing liquid from below the substrate.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a processing liquid introduction unit. The processing liquid introduction unit is preferably located below the bubble supply pipe inside the processing tank. The processing liquid introduction unit preferably includes a plate having a plurality of processing liquid holes. The processing liquid introduction unit preferably introduces the alkaline processing liquid into the processing tank upward through the plurality of processing liquid holes while the alkaline processing liquid is stored in the processing tank.

In one aspect of the present invention, it is preferable that multiple bubble supply pipes are arranged inside the treatment tank. It is also preferable that each bubble supply pipe further comprises a bubble adjustment unit that adjusts the bubbles.

In one aspect of the present invention, it is preferable to further include a control unit. The bubble adjustment unit preferably supplies gas to the bubble supply pipe for each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes. The control unit preferably controls the bubble adjustment unit to control the control target for adjusting the bubbles for each of the bubble supply pipes. It is preferable that the control target includes at least one of the flow rate of the gas, the timing of supplying the gas, and the period of supplying the gas.

In one aspect of the present invention, it is preferable that the control unit controls the control target for each bubble supply pipe based on a physical quantity that indicates a treatment amount of the substrate before the substrate is immersed in the alkaline treatment liquid.
In one aspect of the present invention, it is preferable that the control unit adjusts the distribution of bubbles on the surface of the substrate by controlling the control object for each bubble supply pipe, based on a distribution of physical quantities that indicate the amount of processing of the substrate before the substrate is immersed in the alkaline processing solution.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a memory unit and a control unit. The memory unit preferably stores a trained model constructed by training training data. The control unit preferably controls the memory unit. The bubble adjustment unit preferably supplies gas to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes. The training data preferably includes pre-immersion treatment information and post-immersion treatment information. The pre-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate before immersion in the alkaline processing liquid. The post-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate after immersion in the alkaline processing liquid and removal from the alkaline processing liquid. The training data preferably further includes at least one of flow rate information indicating the flow rate of the gas, timing information indicating the timing of gas supply, and period information indicating the period of gas supply when the training target substrate is immersed in the alkaline processing liquid. The control unit preferably inputs input information to the trained model and obtains output information from the trained model. The input information preferably includes information on physical quantities indicating the amount of processing of the substrate before immersion in the alkaline treatment liquid. The output information preferably includes information indicating a control target. The control target preferably includes at least one of the flow rate of the gas, the timing of supplying the gas, and the period of supplying the gas when the substrate is immersed in the alkaline treatment liquid. The control unit preferably adjusts the bubbles based on the output information.

In one aspect of the present invention, the substrate processing apparatus preferably further includes a memory unit and a control unit. The memory unit preferably stores a trained model constructed by training training data. The control unit preferably controls the memory unit. The bubble adjustment unit preferably supplies gas to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline treatment liquid through the bubble holes. The training data preferably includes pre-immersion treatment information and post-immersion treatment information. The pre-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate before immersion in the alkaline treatment liquid. The post-immersion treatment information is preferably information on physical quantities indicating the amount of processing of the training target substrate after immersion in the alkaline treatment liquid and removal from the alkaline treatment liquid. The training data preferably further includes at least one of flow rate information indicating the flow rate of the gas, timing information indicating the timing of gas supply, and period information indicating the period of gas supply when the training target substrate is immersed in the alkaline treatment liquid. The control unit preferably inputs input information to the trained model and obtains output information from the trained model. The input information preferably includes information on physical quantities indicating the amount of processing of the substrate before immersion in the alkaline treatment liquid, and information indicating a control object. The control object preferably includes at least one of the flow rate of the gas, the timing of supplying the gas, and the duration of supplying the gas when the substrate is immersed in the alkaline treatment liquid. The output information preferably includes information indicating the results of clustering the input information. The control unit preferably controls the control object based on the output information.

In one aspect of the present invention, the substrate holding unit preferably holds the plurality of substrates at intervals in a predetermined direction. The bubble supply pipe preferably extends along the predetermined direction. In the bubble supply pipe, the plurality of bubble holes are preferably arranged at intervals in the predetermined direction. The arrangement of the plurality of substrates preferably includes a plurality of gap spaces. Each of the plurality of gap spaces preferably represents a gap between adjacent substrates in the predetermined direction. The plurality of bubble holes preferably include a first bubble hole, a second bubble hole, and a third bubble hole. The first bubble hole is preferably arranged outward in the predetermined direction from a substrate of the plurality of substrates arranged at one end in the predetermined direction. The second bubble hole is preferably arranged outward in the predetermined direction from a substrate of the plurality of substrates arranged at the other end in the predetermined direction. The third bubble holes are preferably arranged corresponding to each of the plurality of gap spaces. Of the plurality of third bubble holes, there are preferably more first bubble holes than the third bubble holes arranged corresponding to one of the gap spaces. It is preferable that the number of second air bubble holes is greater than the number of third air bubble holes arranged corresponding to one gap space.

In one aspect of the present invention, the bubble supply pipe is preferably hydrophilic.

In one aspect of the present invention, the material of the bubble supply pipe is preferably quartz or polyether ether ketone.

The present invention provides a substrate processing method and substrate processing apparatus that can effectively process substrates using an alkaline processing liquid.

1 is a schematic cross-sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. 4 is a graph showing the relationship between the dissolved oxygen concentration in the alkaline treatment liquid and the etching amount according to the first embodiment. 4 is a graph showing the relationship between the bubble supply time and the dissolved oxygen concentration in the alkaline treatment liquid according to the first embodiment. 1A is a diagram showing a state of the substrate according to embodiment 1 before being immersed in an alkaline treatment liquid, and FIG. 1B is a diagram showing a state of the substrate according to embodiment 1 after being immersed in an alkaline treatment liquid. FIG. 2 is a schematic plan view showing a gas supply unit of the substrate processing apparatus according to the first embodiment. FIG. 2 is a schematic rear view showing a processing liquid introduction section of the substrate processing apparatus according to the first embodiment. 1A is a schematic diagram showing a state before a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid; 1B is a schematic diagram showing a state in which a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid and bubbles are being supplied from all of the bubble supply pipes; 1C is a schematic diagram showing a state in which a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid and bubbles are being supplied from two bubble supply pipes corresponding to the center of the substrate; and 1D is a schematic diagram showing a state in which a substrate according to Embodiment 1 has been pulled out of the alkaline treatment liquid. 1A is a schematic diagram showing a state before a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid; 1B is a schematic diagram showing a state in which a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid and bubbles are being supplied from all of the bubble supply pipes; 1C is a schematic diagram showing a state in which a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid and bubbles are being supplied from two bubble supply pipes corresponding to a middle portion of the substrate; and 1D is a schematic diagram showing a state in which a substrate according to Embodiment 1 has been pulled up from the alkaline treatment liquid. 1A is a schematic diagram showing a state before a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid; 1B is a schematic diagram showing a state in which a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid and bubbles are being supplied from all of the bubble supply pipes; 1C is a schematic diagram showing a state in which a substrate according to Embodiment 1 is immersed in an alkaline treatment liquid and bubbles are being supplied from two bubble supply pipes corresponding to the ends of the substrate; and 1D is a schematic diagram showing a state in which a substrate according to Embodiment 1 has been pulled out of the alkaline treatment liquid. 1 is a flowchart illustrating a substrate processing method according to the first embodiment. 5A and 5B are diagrams showing an example of the contact angle (hydrophilicity) of the bubble supply pipe according to the first embodiment. 5A and 5B are diagrams showing an example of the contact angle (hydrophobicity) of the bubble supply pipe according to the first embodiment. FIG. 10 is a block diagram showing a control device of a substrate processing apparatus according to a second embodiment of the present invention. 10 is a flowchart illustrating a substrate processing method according to a second embodiment. FIG. 10 is a block diagram showing a learning device according to a second embodiment. 10 is a flowchart illustrating a learning method according to a second embodiment. 10 is a flowchart showing a substrate processing method according to a third embodiment of the present invention. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; 10A and 10B are diagrams showing the processing results of the substrate according to the first embodiment of the present invention. 10A and 10B are diagrams showing the processing results of a substrate according to Example 2 of the present invention. 1A is a perspective view showing a simulation model according to Examples 3 to 5 of the present invention, and FIG. 1B is a front view showing a simulation model according to Examples 3 to 5 of the present invention. 1A is a diagram showing a simulation result according to Example 3 of the present invention, FIG. 1B is a diagram showing a simulation result according to Example 4 of the present invention, and FIG. 1C is a diagram showing a simulation result according to Example 5 of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In addition, in the drawings, the X-axis, Y-axis, and Z-axis are appropriately illustrated to facilitate understanding. The X-axis, Y-axis, and Z-axis are mutually orthogonal, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. In addition, "plan view" means viewing an object from vertically above. "Rear view" means viewing an object from vertically below.
(Embodiment 1)

A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 10. First, the substrate processing apparatus 100 will be described with reference to Figure 1. Figure 1 is a schematic cross-sectional view showing the substrate processing apparatus 100. The substrate processing apparatus 100 shown in Figure 1 is a batch type apparatus that processes multiple substrates W collectively using an alkaline processing liquid LQ (hereinafter referred to as "alkaline processing liquid LQ"). Note that the substrate processing apparatus 100 can also process a single substrate W.

The substrate processing apparatus 100 includes a processing bath 110, a substrate holding unit 120, a processing liquid introduction unit 130, a circulation unit 140, a processing liquid supply unit 150, a dilution liquid supply unit 160, a drainage unit 170, a bubble adjustment unit 180, an exhaust piping unit 190, a bubble supply unit 200, a thickness measurement unit 210, a communication unit 215, and a control device 220.

The processing tank 110 stores alkaline processing liquid LQ. The processing tank 110 then immerses multiple substrates W in the alkaline processing liquid LQ to process the multiple substrates W.

The alkaline processing liquid LQ is, for example, an aqueous solution containing tetramethylammonium hydroxide (TMAH), an aqueous solution containing trimethyl-2-hydroxyethylammonium hydroxide (TMY), ammonium hydroxide (aqueous ammonia), or an ammonia-hydrogen peroxide solution mixture (SC1). The alkaline processing liquid LQ is, for example, an alkaline etching liquid (hereinafter referred to as "alkaline etching liquid").

The substrate holding unit 120 holds multiple substrates W. The substrate holding unit 120 can also hold a single substrate W. The substrate holding unit 120 includes a lifter. The substrate holding unit 120 immerses multiple substrates W aligned at intervals in the alkaline processing liquid LQ stored in the processing tank 110. The processing liquid introduction unit 130 supplies the alkaline processing liquid LQ to the processing tank 110. The circulation unit 140 circulates the alkaline processing liquid LQ stored in the processing tank 110 and supplies the alkaline processing liquid LQ to the processing liquid introduction unit 130. The processing liquid supply unit 150 supplies the alkaline processing liquid LQ to the processing tank 110. The dilution liquid supply unit 160 supplies the dilution liquid to the processing tank 110. The drainage unit 170 discharges the alkaline processing liquid LQ from the processing tank 110. The diluent is, for example, deionized water (DIW).

The bubble supply unit 200 is disposed inside the processing tank 110. The bubble supply unit 200 supplies the gas GA supplied from the bubble adjustment unit 180 into the alkaline processing liquid LQ in the processing tank 110. Specifically, the bubble supply unit 200 supplies bubbles BB of the gas GA into the alkaline processing liquid LQ in the processing tank 110 (see, for example, Figures 7 to 9). The gas GA is, for example, an inert gas. The inert gas is, for example, nitrogen or argon.

The bubble supply unit 200 includes at least one bubble supply pipe 21. In embodiment 1, the bubble supply unit 200 includes multiple bubble supply pipes 21. For example, the bubble supply unit 200 includes an even number of bubble supply pipes 21. In the example of FIG. 1, the bubble supply unit 200 includes six bubble supply pipes 21. The number of bubble supply pipes 21 is not particularly limited and may be, for example, an odd number. Furthermore, the positions of the multiple bubble supply pipes 21 in the vertical direction D may or may not be aligned. The bubble supply pipes 21 are, for example, bubbler pipes.

Each of the multiple bubble supply pipes 21 has a bubble hole G. In the example of FIG. 1, the bubble hole G faces vertically upward. Although not shown in FIG. 1, each of the multiple bubble supply pipes 21 also has multiple bubble holes G (FIG. 5). The bubble supply pipe 21 supplies bubbles BB into the alkaline processing liquid LQ by discharging gas GA supplied from the bubble adjustment unit 180 through the bubble holes G. In other words, bubbles BB are generated by the gas GA. Details of the bubble supply unit 200 will be described later.

As described above with reference to FIG. 1 , according to the first embodiment, by supplying bubbles BB to the alkaline treatment liquid LQ, the dissolved oxygen concentration in the alkaline treatment liquid LQ can be reduced compared to when bubbles BB are not supplied. As a result, the substrate W immersed in the alkaline treatment liquid LQ can be effectively treated with the alkaline treatment liquid LQ. In other words, by supplying bubbles BB, the amount of substrate W treated with the alkaline treatment liquid LQ can be increased compared to when bubbles BB are not supplied. In the first embodiment, as an example, the treatment of the substrate W with the alkaline treatment liquid LQ is etching of the substrate W. In this case, the amount of substrate W treated with the alkaline treatment liquid LQ is the amount of etching of the substrate W. Therefore, by supplying bubbles BB, the amount of etching of the substrate W with the alkaline treatment liquid LQ can be increased.

Furthermore, according to embodiment 1, by supplying bubbles BB to the alkaline processing liquid LQ, the alkaline processing liquid LQ that comes into contact with the surface of the substrate W can be effectively replaced with fresh alkaline processing liquid LQ. As a result, when a surface pattern including recesses is formed on the surface of the substrate W, the alkaline processing liquid LQ in the recesses can be effectively replaced with fresh alkaline processing liquid LQ by the diffusion phenomenon. Therefore, the wall surfaces within the recesses of the surface pattern can be effectively treated (etched) with the alkaline processing liquid LQ from shallow to deep positions. In this specification, the surface of the substrate W refers to the main surface of the substrate W.

Next, the relationship between the dissolved oxygen concentration and the etching amount will be explained with reference to Figure 2. Figure 2 is a graph showing the relationship between the dissolved oxygen concentration in the alkaline processing liquid LQ and the etching amount. The horizontal axis represents the dissolved oxygen concentration (ppm) in the alkaline processing liquid LQ, and the vertical axis represents the etching amount of the substrate W.

Figure 2 shows an example in which TMAH was used as the alkaline processing liquid LQ. The concentration of TMAH was 0.31%. The gas GA was nitrogen. Therefore, the bubbles BB were nitrogen bubbles. A polysilicon film (polysilicon layer) was formed on the substrate W. Figure 2 shows the etching amount of the polysilicon film when the substrate W was immersed in TMAH. The etching amount is the value obtained by subtracting the thickness of the polysilicon film after immersion from the thickness of the polysilicon film before immersion in TMAH. The etching amount may also be referred to as the "etching amount of the substrate W." In this specification, "after immersion of the substrate W" refers to "after the substrate W has been immersed, processing has been completed, and the substrate W has been removed from the alkaline processing liquid LQ."

As shown in Figure 2, the lower the dissolved oxygen concentration, the greater the etching amount (processing amount) of the substrate W. The etching amount (processing amount) was approximately directly proportional to the dissolved oxygen concentration. The proportionality constant was negative.

Next, the relationship between the supply time of the bubbles BB and the dissolved oxygen concentration will be explained with reference to Figure 3. Figure 3 is a graph showing the relationship between the supply time of the bubbles BB and the dissolved oxygen concentration in the alkaline treatment liquid LQ. The horizontal axis represents the supply time (hours) of the bubbles BB, and the vertical axis represents the dissolved oxygen concentration (ppm) in the alkaline treatment liquid LQ.

Figure 3 shows an example in which TMAH was used as the alkaline processing liquid LQ. The concentration of TMAH was 0.31%. The gas GA used to generate the bubbles BB was nitrogen. Therefore, the bubbles BB were nitrogen bubbles. Plot g1 shows the dissolved oxygen concentration when the flow rate of the gas GA was 10 L/min. Plot g2 shows the dissolved oxygen concentration when the flow rate of the gas GA was 20 L/min. Plot g3 shows the dissolved oxygen concentration when the flow rate of the gas GA was 30 L/min. In this case, the flow rate of the gas GA indicates the flow rate of the gas GA supplied to one bubble supply pipe 21.

As can be seen from plots g1 to g3, the dissolved oxygen concentration in the alkaline treatment liquid LQ became approximately constant after about one hour. Furthermore, when the dissolved oxygen concentration became approximately constant, the greater the flow rate of gas GA, the lower the dissolved oxygen concentration in the alkaline treatment liquid LQ. In other words, when the dissolved oxygen concentration became approximately constant, the greater the amount of air bubbles BB supplied to the alkaline treatment liquid LQ, the lower the dissolved oxygen concentration in the alkaline treatment liquid LQ. This is because the greater the flow rate of gas GA, the more air bubbles BB are supplied to the alkaline treatment liquid LQ.

The following could be inferred from plots g1 to g3. That is, when a distribution of bubbles BB exists in the alkaline treatment liquid LQ in the treatment tank 110, it could be inferred that the more bubbles BB there are in the alkaline treatment liquid LQ, the lower the dissolved oxygen concentration, and vice versa. The inventors of the present application have confirmed through experiments that this inference is correct.

As explained above with reference to Figures 2 and 3, the more bubbles BB supplied to the alkaline treatment liquid LQ, the lower the dissolved oxygen concentration in the alkaline treatment liquid LQ. Furthermore, the lower the dissolved oxygen concentration in the alkaline treatment liquid LQ, the greater the etching amount (processing amount) of the substrate W.

That is, the more bubbles BB supplied to the alkaline treatment liquid LQ, the greater the etching amount (processing amount) of the substrate W. In other words, the greater the flow rate of the gas GA for generating the bubbles BB, the greater the etching amount (processing amount) of the substrate W. On the other hand, the fewer bubbles BB supplied to the alkaline treatment liquid LQ, the smaller the etching amount (processing amount) of the substrate W. In other words, the smaller the flow rate of the gas GA for generating the bubbles BB, the smaller the etching amount (processing amount) of the substrate W.

Furthermore, from the graphs of Figures 2 and 3, it can be inferred that when a distribution of bubbles BB exists in the alkaline treatment liquid LQ in the treatment tank 110, the etching amount (treatment amount) of the substrate W increases in areas where there are more bubbles BB in the alkaline treatment liquid LQ, and the etching amount (treatment amount) of the substrate W decreases in areas where there are fewer bubbles BB in the alkaline treatment liquid LQ. The inventors of the present application have confirmed through experiments that this inference is correct.

Referring again to FIG. 1, the description of the substrate processing apparatus 100 will continue. The bubble adjustment unit 180 supplies gas GA to the bubble supply unit 200. The bubble adjustment unit 180 also adjusts the gas GA supplied to the bubble supply unit 200, thereby adjusting the bubbles BB supplied by the bubble supply unit 200. The exhaust piping unit 190 exhausts water vapor and gas GA from the processing tank 110.

The thickness measurement unit 210 non-contactly measures the thickness of the object (hereinafter referred to as "object TG") constituting the substrate W, and generates a thickness detection signal indicating the thickness of the object TG. The thickness detection signal is input to the control device 220. The object TG is the object to be processed with the alkaline processing liquid LQ. The object TG is, for example, the substrate W itself, a substrate body (e.g., a substrate body made of silicon), or a substance formed on the surface of the substrate body. The substance formed on the surface of the substrate body is, for example, a substance made of the same material as the substrate body (e.g., a polysilicon film), or a substance made of a different material from the substrate body (e.g., a silicon oxide film, a silicon nitride film, or a resist). The "substance" may constitute a film or a layer.

The thickness measurement unit 210 measures the thickness of the object TG, for example, by spectral interferometry. Specifically, the thickness measurement unit 210 includes an optical probe, a signal line, and a thickness measurement device. The optical probe has a lens. The signal line connects the optical probe to the thickness measurement device. The signal line includes, for example, an optical fiber. The thickness measurement device has a light source and a light receiving element. Light emitted by the light source of the thickness measurement device is emitted to the object TG via the signal line and the optical probe. Light reflected by the object TG is received by the light receiving element of the thickness measurement device via the optical probe and the signal line. The thickness measurement device analyzes the light received by the light receiving element to calculate the thickness of the object TG. The thickness measurement device generates a thickness detection signal indicating the calculated thickness of the object TG.

The communication unit 215 is connected to a network and communicates with external devices. Networks include, for example, the Internet, a local area network (LAN), a public telephone network, and a short-range wireless network. The communication unit 215 is a communication device, such as a network interface controller. The communication unit 215 may have a wired communication module or a wireless communication module.

The control device 220 controls each component of the substrate processing apparatus 100. For example, the control device 220 controls the substrate holder 120, the circulation unit 140, the processing liquid supply unit 150, the dilution liquid supply unit 160, the drainage unit 170, the bubble adjustment unit 180, and the thickness measurement unit 210.

The control device 220 includes a control unit 221 and a memory unit 223. The control unit 221 includes processors such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The memory unit 223 includes a storage device and stores data and computer programs. The processor of the control unit 221 executes the computer programs stored in the storage device of the memory unit 223 to control each component of the substrate processing apparatus 100. For example, the memory unit 223 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory and a hard disk drive. The memory unit 223 may also include removable media such as an optical disk. The memory unit 223 is, for example, a non-transitory computer-readable storage medium. The control device 220 may also include an input device and a display device.

Continuing with reference to Figure 1, the substrate processing apparatus 100 will be described in detail. The processing tank 110 has a double tank structure including an inner tank 112 and an outer tank 114. The inner tank 112 and outer tank 114 each have an upper opening that opens upward. The inner tank 112 stores alkaline processing liquid LQ and is configured to be able to accommodate multiple substrates W. The outer tank 114 is provided on the outer surface of the upper opening of the inner tank 112. The height of the upper edge of the outer tank 114 is higher than the height of the upper edge of the inner tank 112.

The treatment tank 110 further has a lid 116. The lid 116 can be opened and closed relative to the top opening of the inner tank 112. When the lid 116 is closed, the lid 116 can block the top opening of the inner tank 112.

The lid 116 has a door portion 116a and a door portion 116b. The door portion 116a is located on one side of the upper opening of the inner tank 112. The door portion 116a is located near the upper edge of the inner tank 112 and can be opened and closed relative to the upper opening of the inner tank 112. The door portion 116b is located on the other side of the upper opening of the inner tank 112. The door portion 116b is located near the upper edge of the inner tank 112 and can be opened and closed relative to the upper opening of the inner tank 112. The door portions 116a and 116b close to cover the upper opening of the inner tank 112, thereby sealing the inner tank 112.

The substrate holding unit 120 moves vertically upward or downward while holding multiple substrates W. As the substrate holding unit 120 moves vertically downward, the multiple substrates W held by the substrate holding unit 120 are immersed in the alkaline processing liquid LQ stored in the inner bath 112.

The substrate holding unit 120 includes a main body plate 122 and holding rods 124. The main body plate 122 is a plate extending in the vertical direction D (Z direction). The holding rods 124 extend horizontally (Y direction) from one main surface of the main body plate 122. In the example of Figure 1, three holding rods 124 extend horizontally from one main surface of the main body plate 122. The multiple substrates W are aligned at intervals and held in an upright position (vertical position) by the multiple holding rods 124 abutting the lower edge of each substrate W.

The substrate holding part 120 may further include a lifting unit 126. The lifting unit 126 raises and lowers the main body plate 122 between a processing position (position shown in FIG. 2(b)) where the multiple substrates W held by the substrate holding part 120 are located within the inner bath 112, and a retracted position (position shown in FIG. 2(a)) where the multiple substrates W held by the substrate holding part 120 are located above the inner bath 112. Therefore, when the main body plate 122 is moved to the processing position by the lifting unit 126, the multiple substrates W held by the holding rods 124 are immersed in the alkaline processing liquid LQ. In this way, the multiple substrates W are processed.

The treatment liquid introduction section 130 is located below the bubble supply section 200 (specifically, the bubble supply pipe 21) inside the treatment tank 110 (specifically, the inner tank 112).

Hereinafter, unless otherwise specified, the treatment tank 110 refers to the inner tank 112.

The treatment liquid introduction unit 130 includes a plate 31. The plate 31 has a generally flat shape. The plate 31 divides the interior of the treatment bath 110 to form a treatment chamber 113 and an introduction chamber 115. In other words, the treatment bath 110 has the treatment chamber 113 and the introduction chamber 115. The treatment chamber 113 is a chamber located above the plate 31 within the treatment bath 110. The bubble supply unit 200 is disposed in the treatment chamber 113. The substrate W is disposed in the treatment chamber 113. The introduction chamber 115 is a chamber located below the plate 31 within the treatment bath 110.

The plate 31 is positioned below the bubble supply section 200. The plate 31 covers the bottom surface of the treatment tank 110. The plate 31 is approximately perpendicular to the vertical direction D. The plate 31 has multiple treatment liquid holes P. The treatment liquid holes P penetrate the plate 31. The treatment liquid holes P are arranged over the entire surface of the plate 31. The treatment liquid holes P face vertically upward.

When the alkaline treatment liquid LQ is stored in the treatment tank 110, the treatment liquid introduction section 130 introduces the alkaline treatment liquid LQ upward into the treatment tank 110 through multiple treatment liquid holes P. Therefore, the treatment liquid introduction section 130 can generate a laminar flow of the alkaline treatment liquid LQ supplied from the circulation section 140. In other words, the treatment liquid introduction section 130 introduces the alkaline treatment liquid LQ into the treatment tank 110 by generating a laminar flow of the alkaline treatment liquid LQ. The laminar flow of the alkaline treatment liquid LQ flows upward from the multiple treatment liquid holes P in a substantially vertical direction D.

According to embodiment 1, the alkaline processing liquid LQ is introduced into the processing tank 110 by a laminar flow of the alkaline processing liquid LQ, which prevents the flow of bubbles BB supplied to the alkaline processing liquid LQ by the bubble supply unit 200 from being disturbed. Therefore, the bubbles BB can effectively reduce the dissolved oxygen concentration in the alkaline processing liquid LQ. As a result, the substrate W can be effectively processed (etched) with the alkaline processing liquid LQ.

Specifically, the treatment liquid introduction section 130 includes at least one discharge section 131 and at least one dispersion plate 132. The discharge section 131 is, for example, a nozzle or a pipe. The dispersion plate 132 is, for example, substantially flat. The dispersion plate 132 is substantially perpendicular to the vertical direction D. The discharge section 131 and the dispersion plate 132 are disposed in the introduction chamber 115.

The discharge section 131 is located below the dispersion plate 132. The discharge section 131 faces the dispersion plate 132 in the vertical direction D. The discharge section 131 discharges the alkaline processing liquid LQ supplied from the circulation section 140 toward the dispersion plate 132. Therefore, the alkaline processing liquid LQ hits the dispersion plate 132. As a result, the pressure of the alkaline processing liquid LQ is dispersed by the dispersion plate 132. In other words, the dispersion plate 132 disperses the pressure of the alkaline processing liquid LQ discharged by the discharge section 131. The alkaline processing liquid LQ, whose pressure has been dispersed by the dispersion plate 132, then spreads in a substantially horizontal direction in the introduction chamber 115. Furthermore, the alkaline processing liquid LQ is supplied as a laminar flow upward along the vertical direction D from each processing liquid hole P of the plate 31 into the processing chamber 113. In this way, the treatment liquid introduction section 130 has a flow rectification function for the alkaline treatment liquid LQ in that it generates a laminar flow of the alkaline treatment liquid LQ along the vertical direction D.

The circulation section 140 includes a pipe 141, a pump 142, a heater 143, a filter 144, an adjustment valve 145, and a valve 146. The pump 142, the heater 143, the filter 144, the adjustment valve 145, and the valve 146 are arranged in this order from upstream to downstream of the pipe 141.

The pipe 141 guides the alkaline processing liquid LQ delivered from the processing tank 110 back into the processing tank 110. Specifically, the upstream end of the pipe 141 is connected to the outer tank 114. Therefore, the pipe 141 guides the alkaline processing liquid LQ from the outer tank 114 to the processing liquid introduction section 130. The processing liquid introduction section 130 is connected to the downstream end of the pipe 141. Specifically, the discharge section 131 is connected to the downstream end of the pipe 141.

The pump 142 sends the alkaline processing liquid LQ from the pipe 141 to the discharge unit 131. Therefore, the discharge unit 131 discharges the alkaline processing liquid LQ supplied from the pipe 141. The filter 144 filters the alkaline processing liquid LQ flowing through the pipe 141.

The heater 143 heats the temperature of the alkaline processing liquid LQ flowing through the pipe 141. In other words, the heater 143 adjusts the temperature of the alkaline processing liquid LQ. The adjustment valve 145 adjusts the opening of the pipe 141 to adjust the flow rate of the alkaline processing liquid LQ supplied to the discharge section 131. The valve 146 opens and closes the pipe 141.

The processing liquid supply unit 150 includes a nozzle 152, a pipe 154, and a valve 156. The nozzle 152 ejects the alkaline processing liquid LQ into the outer bath 114. The nozzle 152 may also supply the alkaline processing liquid LQ to the inner bath 112.

The nozzle 152 is connected to a pipe 154. The pipe 154 is supplied with the alkaline processing liquid LQ from the processing liquid supply source TKA. A valve 156 is disposed in the pipe 154. When the valve 156 is opened, the alkaline processing liquid LQ ejected from the nozzle 152 is supplied into the outer tank 114. The alkaline processing liquid LQ is then supplied from the outer tank 114 through the pipe 141 and the processing liquid introduction section 130 to the inner tank 112.

The diluent supply unit 160 includes a nozzle 162, a pipe 164, and a valve 166. The nozzle 162 dispenses the diluent into the outer tank 114. The nozzle 162 is connected to the pipe 164. The pipe 164 is supplied with the diluent from the diluent supply source TKB. A valve 166 is disposed on the pipe 164. When the valve 166 is opened, the diluent dispensed from the nozzle 162 is supplied into the outer tank 114.

The drainage section 170 includes a drainage pipe 170a and a valve 170b. The drainage pipe 170a is connected to the bottom wall of the inner tank 112 of the treatment tank 110. A valve 170b is disposed on the drainage pipe 170a. When the valve 170b opens, the alkaline treatment liquid LQ stored in the inner tank 112 is discharged to the outside through the drainage pipe 170a. The discharged alkaline treatment liquid LQ is sent to a wastewater treatment device (not shown) for treatment.

The bubble supply unit 200 is disposed inside the processing tank 110 (processing chamber 113). Specifically, the multiple bubble supply pipes 21 are disposed inside the processing tank 110 (processing chamber 113). Even more specifically, the multiple bubble supply pipes 21 are disposed inside the processing tank 110, above the plate 31 and below the substrate W. The bubble supply pipes 21 are made of, for example, quartz or resin.

Each of the multiple bubble supply pipes 21 supplies gas GA to the alkaline processing liquid LQ stored in the processing tank 110. Specifically, the bubble supply pipes 21 supply the gas GA to the alkaline processing liquid LQ upward, that is, toward the liquid surface of the alkaline processing liquid LQ. In this case, the bubble supply pipes 21 supply the gas GA to the alkaline processing liquid LQ as bubbles BB.

In detail, while the substrate W is immersed in the alkaline treatment liquid LQ, each of the multiple bubble supply pipes 21 supplies bubbles BB from each of the multiple bubble holes G to the alkaline treatment liquid LQ from below the substrate W. Therefore, the dissolved oxygen concentration in the alkaline treatment liquid LQ can be reduced compared to when bubbles BB are not supplied. As a result, the substrate W immersed in the alkaline treatment liquid LQ can be effectively treated with the alkaline treatment liquid LQ. In other words, by supplying bubbles BB, the amount of substrate W treated with the alkaline treatment liquid LQ can be increased compared to when bubbles BB are not supplied. This point will be described in more detail below. Furthermore, by supplying bubbles BB, the alkaline treatment liquid LQ in contact with the surface of the substrate W can be effectively replaced with fresh alkaline treatment liquid LQ.

The bubble adjustment unit 180 supplies the gas GA supplied from the gas supply source TKC to the plurality of bubble supply pipes 21. Specifically, the substrate processing apparatus 100 further includes a plurality of pipes 181. The plurality of pipes 181 are respectively connected to the plurality of bubble supply pipes 21. The bubble adjustment unit 180 then supplies the gas GA supplied from the gas supply source TKC from the plurality of pipes 181 to the plurality of bubble supply pipes 21. Specifically, the bubble adjustment unit 180 includes a plurality of bubble adjustment mechanisms 182. The plurality of bubble adjustment mechanisms 182 are respectively connected to the plurality of pipes 181. That is, one end of the pipe 181 is connected to the bubble supply pipe 21, and the other end of the pipe 181 is connected to the bubble adjustment mechanism 182. The plurality of bubble adjustment mechanisms 182 are respectively provided corresponding to the plurality of bubble supply pipes 21. The bubble adjustment mechanism 182 supplies gas GA supplied from the gas supply source TKC to the corresponding bubble supply pipe 21 via the corresponding pipe 181.

Furthermore, the bubble adjustment unit 180 adjusts the amount and/or number of bubbles BB for each bubble supply pipe 21. Therefore, according to embodiment 1, the in-plane processing uniformity for each substrate W can be improved. Specifically, the bubble adjustment unit 180 adjusts the amount and/or number of bubbles BB for each bubble supply pipe 21.

That is, as explained with reference to Figures 2 and 3, the more bubbles BB there are, the greater the processing amount of the substrate W, and the fewer bubbles BB there are, the less processing amount of the substrate W. Therefore, if there is a thickness distribution on the substrate W before immersion in the alkaline processing liquid LQ, the processing amount can be adjusted in each region on the surface of the substrate W by adjusting the distribution of bubbles BB on the surface of the substrate W. As a result, for example, the number of bubbles BB can be increased in regions on the surface of the substrate W that are thicker. Alternatively, for example, the number of bubbles BB can be decreased in regions on the surface of the substrate W that are thinner. This can improve the in-plane processing uniformity of the substrate W.

In detail, in the bubble adjustment unit 180, each bubble adjustment mechanism 182 adjusts the flow rate of the gas GA supplied to the corresponding bubble supply pipe 21. Adjustment of the flow rate of the gas GA includes maintaining the flow rate of the gas GA constant, increasing the flow rate of the gas GA, decreasing the flow rate of the gas GA, and setting the flow rate of the gas GA to zero.

The control unit 221 controls the lifting unit 126, valve 146, adjustment valve 145, heater 143, pump 142, valve 156, valve 166, valve 170b, and bubble adjustment unit 180 (multiple bubble adjustment mechanisms 182).

Next, with reference to Figure 4, the substrate processing apparatus 100 will be described before and after the substrates W are immersed in the processing bath 110. Figures 4(a) and 4(b) are schematic perspective views of the substrate processing apparatus 100 before and after the substrates W are placed in the processing bath 110. Note that in Figure 4, the lid 116 and the alkaline processing liquid LQ in the processing bath 110 shown in Figure 1 are omitted to avoid overly complicating the drawing. Also, Figures 4(a) and 4(b) show an example in which one lot (e.g., 25 substrates W) of substrates W are processed in the processing bath 110.

As shown in FIG. 4(a), the substrate holder 120 holds multiple substrates W (one lot of substrates W) spaced apart in a first direction D10 (Y direction). The multiple substrates W are arranged in a line along the first direction D10. In other words, the first direction D10 indicates the arrangement direction of the multiple substrates W. The first direction D10 is approximately parallel to the horizontal direction and approximately perpendicular to the vertical direction D. Furthermore, each of the multiple substrates W is approximately parallel to the second direction D20. The second direction D20 is approximately perpendicular to the first direction D10 and the vertical direction D, and is approximately parallel to the horizontal direction.

The first direction D10 corresponds to an example of the "predetermined direction" in the present invention.

In FIG. 4(a), the substrate holding unit 120 is positioned above the inner bath 112. The substrate holding unit 120 descends vertically downward (in the Z direction) while holding multiple substrates W. This causes the multiple substrates W to be loaded into the inner bath 112. As shown in FIG. 4(b), when the substrate holding unit 120 descends to the inner bath 112, the multiple substrates W are immersed in the alkaline processing liquid LQ in the inner bath 112.

Next, the bubble supply unit 200 will be described with reference to Figure 5. Figure 5 is a schematic plan view showing the bubble supply unit 200. As shown in Figure 5, when describing the multiple bubble supply pipes 21 while distinguishing them from one another, they will be referred to as bubble supply pipe 21a, bubble supply pipe 21b, bubble supply pipe 21c, bubble supply pipe 21d, bubble supply pipe 21e, and bubble supply pipe 21f from the right in Figure 5.

The multiple bubble supply pipes 21 are arranged substantially parallel to one another and spaced apart in a plan view. In the example of FIG. 5, the multiple bubble supply pipes 21 are arranged symmetrically with respect to the imaginary center line CL. The imaginary center line CL passes through the center of each substrate W and extends along the first direction D10.

Specifically, the multiple bubble supply pipes 21 are arranged in the treatment tank 110 substantially parallel to one another and spaced apart in the second direction D20. The bubble supply pipes 21 extend along the first direction D10. In each of the multiple bubble supply pipes 21, the multiple bubble holes G are arranged in a substantially straight line at intervals in the first direction D10. In the example of FIG. 5, the multiple bubble holes G in each of the multiple bubble supply pipes 21 are arranged in a substantially straight line at equal intervals in the first direction D10. In each of the multiple bubble supply pipes 21, each bubble hole G is provided on the upper surface of the bubble supply pipe 21.

Each of the multiple bubble supply pipes 21 has a first pipe section T1, a second pipe section T2, and a third pipe section T3. The first pipe section T1 extends outward in the first direction D10 relative to the substrate W1, which is one of the multiple substrates W and is located at one end in the first direction D10. The second pipe section T2 extends outward in the first direction D10 relative to the substrate W2, which is one of the multiple substrates W and is located at the other end in the first direction D10. The third pipe section T3 is the portion of the bubble supply pipe 21 between the first pipe section T1 and the second pipe section T2.

In each of the multiple bubble supply pipes 21, the multiple bubble holes G include multiple first bubble holes G1, multiple second bubble holes G2, and multiple third bubble holes G3.

Of the multiple air bubble holes G, first air bubble holes G1 are arranged in the first pipe section T1. In the example of Figure 5, five first air bubble holes G1 are arranged in the first pipe section T1. Of the multiple air bubble holes G, second air bubble holes G2 are arranged in the second pipe section T2. In the example of Figure 5, five second air bubble holes G2 are arranged in the second pipe section T2. Multiple third air bubble holes G3 are arranged in the third pipe section T3 between the first pipe section T1 and the second pipe section T2.

In detail, there are multiple gap spaces GP in the arrangement of multiple substrates W. Each of the multiple gap spaces GP represents the space between adjacent substrates W in the first direction D10. The multiple gap spaces GP are partitioned by each substrate W and lined up along the first direction D10.

In each bubble supply pipe 21, the first bubble hole G1 is positioned further outward in the first direction D10 than the substrate W1. In each bubble supply pipe 21, the second bubble hole G2 is positioned further outward in the first direction D10 than the substrate W. In each bubble supply pipe 21, the multiple third bubble holes G3 are positioned corresponding to the multiple gap spaces GP. In the example of FIG. 5, in each of the bubble supply pipes 21b to 21e, the multiple third bubble holes G3 each face the multiple gap spaces GP in the vertical direction D. Furthermore, in each of the bubble supply pipes 21a and 21f, the multiple third bubble holes G3 each face the multiple gap spaces GP in a direction intersecting the vertical direction D.

In each bubble supply pipe 21, it is preferable that the number of first bubble holes G1 is greater than the number of third bubble holes G3, among the multiple third bubble holes G3, that are arranged corresponding to one gap space GP. Additionally, it is preferable that the number of second bubble holes G2 is greater than the number of third bubble holes G3 that are arranged corresponding to one gap space GP. According to this preferred example, bubbles BB rise smoothly even near both ends of multiple substrates W in the first direction D10. Therefore, bubbles BB can be effectively supplied to the surfaces of substrates W (e.g., substrates W1 and W2) near both ends in the first direction D10. As a result, the alkaline processing liquid LQ in contact with the surfaces of substrates W near both ends in the first direction D10 can be effectively replaced with fresh alkaline processing liquid LQ. For example, a large number of bubbles BB can be effectively supplied to the gap space GP between the substrates W adjacent to substrate W1 and W1, and to the gap space GP between the substrates W adjacent to substrate W2 and W2, thereby effectively replacing the alkaline processing liquid LQ with fresh alkaline processing liquid LQ.

For example, if the first bubble holes G1 and second bubble holes G2 were not present, the upward movement of the bubbles BB may be inhibited by the influence of the downward flow of the alkaline processing liquid LQ near both ends of the multiple substrates W in the first direction D10. As a result, the bubbles BB may have difficulty entering the gap space GP near both ends of the multiple substrates W in the first direction D10. Therefore, by providing more first bubble holes G1 and second bubble holes G2 than third bubble holes G3, the bubbles BB are allowed to rise smoothly and the influence of the downward flow of the alkaline processing liquid LQ is inhibited. The downward flow of the alkaline processing liquid LQ may be generated by the liquid surface, for example, when the alkaline processing liquid LQ rising in the gap space GP reaches the liquid surface.

In the example of FIG. 1, the multiple bubble holes G include five first bubble holes G1 and five second bubble holes G2. Furthermore, in each bubble supply pipe 21, one third bubble hole G3 is arranged corresponding to one gap space GP. That is, in each bubble supply pipe 21, one third bubble hole G3 is arranged opposite one gap space GP. In this case, for example, if the substrate holder 120 holds K substrates W, (K-1) third bubble holes G3 are provided. K represents an integer of 2 or greater, for example. K is 50, for example.

In the example of FIG. 5, the bubble supply pipe 21a and the bubble supply pipe 21f are located outside the substrate W in the second direction D20 in a plan view. The bubble supply pipe 21a and the bubble supply pipe 21f may overlap the substrate W in a plan view. Furthermore, the bubble supply pipe 21a and the bubble supply pipe 21f are arranged at the outermost positions in the second direction D20 among the bubble supply pipes 21a to 21f. The bubble supply pipe 21c and the bubble supply pipe 21d are arranged at the innermost positions in the second direction D20 among the bubble supply pipes 21a to 21f. The bubble supply pipe 21b is arranged between the bubble supply pipe 21a and the bubble supply pipe 21c. The bubble supply pipe 21e is arranged between the bubble supply pipe 21d and the bubble supply pipe 21f.

Continuing to refer to Figure 5, the bubble adjustment unit 180 and piping 181 will be described. The bubble adjustment unit 180 supplies gas GA to each bubble supply pipe 21, thereby supplying bubbles BB from the bubble holes G to the alkaline treatment liquid LQ (Figure 1) in the treatment tank 110. The greater the flow rate of gas GA supplied to the bubble supply pipes 21, the more bubbles BB are supplied from the bubble supply pipes 21.

In detail, one end of each pipe 181 is connected to one end of the corresponding bubble supply pipe 21 in the first direction D10. Meanwhile, the other end of each pipe 181 is connected to the corresponding bubble adjustment mechanism 182. Each bubble adjustment mechanism 182 supplies gas GA to the corresponding bubble supply pipe 21 via the corresponding pipe 181. Furthermore, each bubble adjustment mechanism 182 individually adjusts the flow rate of gas GA supplied to the corresponding bubble supply pipe 21, thereby individually adjusting the flow rate of gas GA supplied to the corresponding bubble supply pipe 21.

Specifically, the bubble control mechanism 182 includes a valve 41, a filter 42, a flow meter 43, and an adjustment valve 44. The valve 41, the filter 42, the flow meter 43, and the adjustment valve 44 are arranged in this order on the pipe 181 from downstream to upstream of the pipe 181.

The adjustment valve 44 adjusts the flow rate of the gas GA supplied to the pipe 181 by adjusting the opening of the pipe 181, thereby adjusting the flow rate of the gas GA supplied to the bubble supply pipe 21. The flow meter 43 measures the flow rate of the gas GA flowing through the pipe 181. The adjustment valve 44 adjusts the flow rate of the gas GA based on the measurement results of the flow meter 43. Note that, for example, a mass flow controller may be provided instead of the adjustment valve 44 and flow meter 43.

The filter 42 removes foreign matter from the gas GA flowing through the pipe 181. The valve 41 opens and closes the pipe 181. In other words, the valve 41 switches between supplying and stopping the gas GA from the pipe 181 to the bubble supply pipe 21.

When describing the multiple bubble adjustment mechanisms 182 separately, they will be referred to from top to bottom in Figure 5 as bubble adjustment mechanism 182a, bubble adjustment mechanism 182b, bubble adjustment mechanism 182c, bubble adjustment mechanism 182d, bubble adjustment mechanism 182e, and bubble adjustment mechanism 182f. The bubble adjustment mechanisms 182a to 182f adjust the flow rate of the gas GA supplied to the bubble supply pipes 21a to 21f, respectively.

Next, the treatment liquid introduction section 130 will be described with reference to FIG. 6. FIG. 6 is a schematic rear view showing the treatment liquid introduction section 130. As shown in FIG. 6, the treatment liquid introduction section 130 includes a plurality of discharge sections 131 and a plurality of dispersion plates 132. In the example of FIG. 6, the treatment liquid introduction section 130 includes two discharge sections 131 and two dispersion plates 132. The plurality of discharge sections 131 are arranged at intervals in the first direction D10. The plurality of dispersion plates 132 are arranged at intervals in the first direction D10. The plurality of dispersion plates 132 correspond to the plurality of discharge sections 131, respectively. The plurality of dispersion plates 132 are arranged below the plate 31. In the example of FIG. 6, the dispersion plate 132 has a substantially circular plate shape. The plurality of discharge sections 131 are arranged below the plurality of dispersion plates 132, respectively.

The discharge section 131 and the dispersion plate 132 are arranged to correspond to the central region 31a of the plate 31 in the second direction D20 when viewed from the rear. The central region 31a extends along the first direction D10.

The piping 141 in which the circulation section 140 (Figure 1) is arranged includes piping 133. The piping 133 extends from one end of the plate 31 to the other end in the first direction D10. The piping 133 extends along the first direction D10. The piping 133 faces the back surface of the plate 31. In other words, the piping 133 is arranged below the plate 31. Specifically, the piping 133 is arranged below the dispersion plate 132.

The discharge section 131 is connected to the upper surface of the pipe 133. The discharge section 131 and the pipe 133 are in communication. The discharge section 131 protrudes vertically upward from the pipe 133 toward the dispersion plate 132. The alkaline treatment liquid LQ is supplied to the pipe 133 from the circulation section 140. As a result, the discharge section 131 discharges the alkaline treatment liquid LQ toward the dispersion plate 132. This distributes the pressure of the alkaline treatment liquid LQ, causing the alkaline treatment liquid LQ to spread horizontally. The alkaline treatment liquid LQ then rises from the multiple treatment liquid holes P to form a laminar flow. The multiple treatment liquid holes P are formed across the entire surface of the plate 31.

Next, an example of substrate W processing by adjusting the bubble BB will be described with reference to Figure 7. Figures 7(a) to 7(d) are schematic diagrams showing an example of the processing flow for substrate W.

As shown in FIG. 7(a), state ST1 shows the state before the substrate W is immersed in the alkaline processing liquid LQ. Before immersion, another process has been performed on the substrate W.

Hereinafter, the separate treatment performed on the substrate W before immersion in the alkaline treatment liquid LQ in the treatment bath 110 will be referred to as "pre-treatment."

The substrate W includes a substrate central portion A1, two substrate intermediate portions A2, and two substrate end portions A3. The substrate central portion A1 includes the center CT of the substrate W and extends along the vertical direction D. The substrate central portion A1 indicates the central region of the substrate W in the second direction D20. The substrate end portions A3 indicate the end regions of the substrate W in the second direction D20. The substrate end portions A3 extend along the vertical direction D. One of the two substrate end portions A3 includes the edge E1 of the substrate W. The other of the two substrate end portions A3 includes the edge E2 of the substrate W. The edges E1, E1 indicate the vertices of the substrate W in the second direction D20. The substrate intermediate portion A2 is the region between the substrate central portion A1 and the substrate end portions A3. The two substrate intermediate portions A2 sandwich the substrate central portion A1.

The substrate W has a notch N. The substrate holder 120 (Figure 1) holds the substrate W with the notch N positioned at the apex of the vertical direction D. Therefore, the substrate W is immersed in the alkaline processing liquid LQ with the notch N positioned at the apex of the vertical direction D.

The thickness of the substrate W in the second direction D20 is also shown when the notch N is located at the apex of the vertical direction D.

In state ST1, the thickness of the substrate center portion A1 is greater than the thickness of the substrate middle portion A2 and the substrate edge portion A3. Therefore, the processing amount (etching amount) for the substrate center portion A1 in the pre-processing is less than the processing amount (etching amount) for the substrate middle portion A2 and the substrate edge portion A3 in the pre-processing.

Furthermore, in state ST1, all of the bubble supply pipes 21a to 21f are supplying bubbles BB to the alkaline treatment liquid LQ. For example, the substrate W is immersed in the alkaline treatment liquid LQ a first predetermined time after the start of the supply of bubbles BB. The first predetermined time indicates the time until the dissolved oxygen concentration in the alkaline treatment liquid LQ becomes approximately constant. The first predetermined time is, for example, two hours. In other words, the substrate W is immersed in the alkaline treatment liquid LQ after the dissolved oxygen concentration in the alkaline treatment liquid LQ becomes approximately constant (Figure 3).

As shown in FIG. 7(b), state ST2 indicates a state in which the substrate W is immersed in the alkaline processing liquid LQ and bubbles BB are supplied from all of the bubble supply pipes 21a to 21f. Processing in state ST2 is carried out for a second predetermined time. As a result, the substrate W is processed entirely, and the thickness of the substrate W is reduced overall. The second predetermined time is determined based on the target value of the processing amount. After processing in state ST2, processing in state ST3 is carried out.

As shown in Figure 7(c), state ST3 indicates a state in which the substrate W is immersed in the alkaline treatment liquid LQ and bubbles BB are supplied from the two bubble supply pipes 21c, 21d corresponding to the substrate center A1. Treatment in state ST3 is carried out for a third predetermined time. The third predetermined time is determined based on the thickness of the substrate W before immersion (Figure 7(a)). In other words, the third predetermined time is determined based on the treatment amount of the substrate W before immersion (Figure 7(a)).

Before immersion, the processing volume of the substrate W at the central portion A1 in the pre-processing stage is less than the processing volume of the substrate middle portion A2 and the substrate edge portion A3 (Figure 7(a)). In other words, before immersion, the thickness of the substrate central portion A1 is greater than the thicknesses of the substrate middle portion A2 and the substrate edge portion A3. Therefore, in order to improve the in-plane thickness uniformity of the substrate W, it is necessary to increase the processing volume of the substrate central portion A1 greater than the processing volume of the substrate middle portion A2 and the substrate edge portion A3.

Therefore, in state ST3, only the two bubble supply pipes 21c and 21d corresponding to the substrate center portion A1 supply bubbles BB, while the two bubble supply pipes 21b and 21e corresponding to the substrate intermediate portion A2 and the two bubble supply pipes 21a and 21f corresponding to the substrate edge portion A3 stop supplying bubbles BB. Therefore, the dissolved oxygen concentration near the substrate intermediate portion A2 and the substrate edge portion A3 is higher than the dissolved oxygen concentration near the substrate center portion A1. In other words, the dissolved oxygen concentration near the substrate center portion A1 is relatively lower than the dissolved oxygen concentration near the substrate intermediate portion A2 and the substrate edge portion A3. Therefore, the amount of the substrate center portion A1 treated with the alkaline treatment liquid LQ is greater than the amount of the substrate center portion A2 and the substrate edge portion A3 treated with the alkaline treatment liquid LQ. As a result, the thicknesses of the substrate center portion A1, the substrate intermediate portion A2, and the substrate edge portion A3 become approximately constant. In other words, the in-plane uniformity of the treatment amount of the substrate W is improved. After processing in state ST3, processing in state ST4 is executed.

The flow rate of gas GA supplied from the bubble adjustment unit 180 to each of the bubble supply pipes 21c and 21d may be greater than the flow rate of gas GA supplied from the bubble adjustment unit 180 to each of the bubble supply pipes 21a, 21b, 21e, and 21f. In this case, as above, the dissolved oxygen concentration near the substrate center A1 can be made relatively lower than the dissolved oxygen concentration near the substrate middle A2 and substrate edge A3. As a result, as above, the in-plane uniformity of the processing amount of the substrate W is improved.

As shown in FIG. 7(d), state ST4 indicates a state in which the substrate W has been pulled out of the alkaline treatment liquid LQ. In state ST4, all of the bubble supply pipes 21a to 21f are supplying bubbles BB to the alkaline treatment liquid LQ. State ST4 is maintained for a fourth predetermined time or longer. The fourth predetermined time indicates the time until the dissolved oxygen concentration in the alkaline treatment liquid LQ becomes approximately constant. The fourth predetermined time is, for example, two hours.

Next, another example of substrate W processing by adjusting the bubble BB will be described with reference to Figure 8. Figures 8(a) to 8(d) are schematic diagrams showing an example of the flow of processing a substrate W. Below, we will mainly explain the differences between the state shown in Figure 8 and the state shown in Figure 7.

As shown in FIG. 8(a), state ST11 shows the state before the substrate W is immersed in the alkaline processing liquid LQ. Before immersion, another process has been performed on the substrate W. In other words, a pre-processing step has been performed on the substrate W.

In state ST11, the thickness of the substrate middle portion A2 is greater than the thickness of the substrate center portion A1 and the substrate edge portion A3. Therefore, the processing amount (etching amount) for the substrate middle portion A2 in the pre-processing is less than the processing amount (etching amount) for the substrate center portion A1 and the substrate edge portion A3 in the pre-processing.

Furthermore, in state ST11, all of the bubble supply pipes 21a to 21f are supplying bubbles BB to the alkaline processing liquid LQ.

As shown in FIG. 8(b), state ST12 shows a state in which the substrate W is immersed in the alkaline processing liquid LQ and bubbles BB are being supplied from all of the bubble supply pipes 21a to 21f.

As shown in FIG. 8(c), state ST13 indicates a state in which the substrate W is immersed in the alkaline treatment liquid LQ and bubbles BB are supplied from the two bubble supply pipes 21b, 21e corresponding to the substrate intermediate portion A2. The treatment in state ST13 is carried out for a third predetermined time. The third predetermined time is determined based on the thickness of the substrate W before immersion (FIG. 8(a)). In other words, the third predetermined time is determined based on the treatment amount of the substrate W before immersion (FIG. 8(a)).

Before immersion, the processing volume of the intermediate portion A2 of the substrate in the pre-processing is less than the processing volume of the central portion A1 and the edge portion A3 of the substrate (Figure 8(a)). In other words, before immersion, the thickness of the intermediate portion A2 of the substrate is greater than the thickness of the central portion A1 and the edge portion A3 of the substrate. Therefore, in order to improve the in-plane thickness uniformity of the substrate W, it is necessary to increase the processing volume of the intermediate portion A2 of the substrate more than the processing volume of the central portion A1 and the edge portion A3 of the substrate.

Therefore, in state ST13, only the two bubble supply pipes 21b and 21e corresponding to the substrate intermediate portion A2 supply bubbles BB, while the two bubble supply pipes 21c and 21d corresponding to the substrate central portion A1 and the two bubble supply pipes 21a and 21f corresponding to the substrate edge portion A3 stop supplying bubbles BB. Therefore, the dissolved oxygen concentration near the substrate central portion A1 and the substrate edge portion A3 is higher than the dissolved oxygen concentration near the substrate intermediate portion A2. In other words, the dissolved oxygen concentration near the substrate intermediate portion A2 is relatively lower than the dissolved oxygen concentration near the substrate central portion A1 and the substrate edge portion A3. Therefore, the amount of the substrate intermediate portion A2 treated with the alkaline treatment liquid LQ is greater than the amount of the substrate central portion A1 and the substrate edge portion A3 treated with the alkaline treatment liquid LQ. As a result, the thicknesses of the substrate central portion A1, the substrate intermediate portion A2, and the substrate edge portion A3 become approximately constant. In other words, the in-plane uniformity of the treatment amount of the substrate W is improved. After processing in state ST13, processing in state ST14 is executed.

The flow rate of gas GA supplied from the bubble adjustment unit 180 to each of the bubble supply pipes 21b and 21e may be greater than the flow rate of gas GA supplied from the bubble adjustment unit 180 to each of the bubble supply pipes 21a, 21c, 21d, and 21f. In this case, as above, the dissolved oxygen concentration near the substrate intermediate portion A2 can be made relatively lower than the dissolved oxygen concentration near the substrate central portion A1 and the substrate edge portion A3. As a result, as above, the in-plane uniformity of the processing amount of the substrate W is improved.

As shown in FIG. 8(d), state ST14 shows the state in which the substrate W has been lifted out of the alkaline processing liquid LQ.

Next, referring to Figure 9, we will explain yet another example of processing a substrate W by adjusting the bubble BB. Figures 9(a) to 9(d) are schematic diagrams showing an example of the processing flow for a substrate W. Below, we will mainly explain the differences between the state shown in Figure 9 and the state shown in Figure 7.

As shown in FIG. 9(a), state ST21 shows the state before the substrate W is immersed in the alkaline processing liquid LQ. Before immersion, another process has been performed on the substrate W. In other words, a pre-processing step has been performed on the substrate W.

In state ST21, the thickness of the substrate end portion A3 is greater than the thickness of the substrate center portion A1 and the substrate middle portion A2. Therefore, the processing amount (etching amount) for the substrate end portion A3 in the pre-processing is less than the processing amount (etching amount) for the substrate center portion A1 and the substrate middle portion A2 in the pre-processing.

Furthermore, in state ST21, all of the bubble supply pipes 21a to 21f are supplying bubbles BB to the alkaline processing liquid LQ.

As shown in Figure 9(b), state ST22 shows a state in which the substrate W is immersed in the alkaline processing liquid LQ and bubbles BB are being supplied from all of the bubble supply pipes 21a to 21f.

As shown in Figure 9(c), state ST23 shows a state in which the substrate W is immersed in the alkaline treatment liquid LQ and bubbles BB are supplied from the two bubble supply pipes 21a, 21f corresponding to the substrate end A3. The treatment in state ST23 is carried out for a third predetermined time. The third predetermined time is determined based on the thickness of the substrate W before immersion (Figure 9(a)). In other words, the third predetermined time is determined based on the treatment amount of the substrate W before immersion (Figure 9(a)).

Before immersion, the processing volume of the substrate edge A3 in the pre-processing stage of the substrate W is less than the processing volume of the substrate center A1 and the substrate middle A2 (Figure 9(a)). In other words, before immersion, the thickness of the substrate edge A3 is greater than the thickness of the substrate center A1 and the substrate middle A2. Therefore, in order to improve the in-plane thickness uniformity of the substrate W, it is necessary to process the substrate edge A3 more than the processing volume of the substrate center A1 and the substrate middle A2.

Therefore, in state ST23, only the two bubble supply pipes 21a and 21f corresponding to the substrate edge A3 supply bubbles BB, while the two bubble supply pipes 21c and 21d corresponding to the substrate center A1 and the two bubble supply pipes 21b and 21e corresponding to the substrate middle A2 stop supplying bubbles BB. Therefore, the dissolved oxygen concentration near the substrate center A1 and middle A2 is higher than the dissolved oxygen concentration near the substrate edge A3. In other words, the dissolved oxygen concentration near the substrate edge A3 is relatively lower than the dissolved oxygen concentration near the substrate center A1 and middle A2. Therefore, the amount of the substrate edge A3 treated with the alkaline treatment liquid LQ is greater than the amount of the substrate center A1 and middle A2 treated with the alkaline treatment liquid LQ. As a result, the thicknesses of the substrate center A1, middle A2, and edge A3 become approximately constant. In other words, the in-plane uniformity of the treatment amount of the substrate W is improved. After processing in state ST23, processing in state ST24 is executed.

The flow rate of gas GA supplied from the bubble adjustment unit 180 to each of the bubble supply pipes 21a and 21f may be greater than the flow rate of gas GA supplied from the bubble adjustment unit 180 to each of the bubble supply pipes 21b to 21e. In this case, as above, the dissolved oxygen concentration near the substrate edge A3 can be made relatively lower than the dissolved oxygen concentration near the substrate center A1 and the substrate intermediate portion A2. As a result, as above, the within-surface uniformity of the processing amount of the substrate W is improved.

As shown in FIG. 9(d), state ST14 shows the state in which the substrate W has been lifted out of the alkaline processing liquid LQ.

The treatment of substrates W by adjusting the amount of bubbles BB has been described above with reference to Figures 7 to 9. However, of the bubble supply pipes 21a to 21f, the bubble supply pipe 21 that stops supplying bubbles BB is determined based on the thickness of the substrate W before immersion, i.e., the distribution of the processing amount of substrates W before immersion. In other words, of the bubble supply pipes 21a to 21f, the bubble supply pipe 21 that continues supplying bubbles BB is determined based on the thickness of the substrate W before immersion, i.e., the distribution of the processing amount of substrates W before immersion.

For example, if the processing volume of the substrate middle portion A2 and substrate edge portion A3 before immersion is less than the processing volume of the substrate center portion A1 before immersion, bubbles BB are supplied from bubble supply pipes 21a, 21b, 21e, and 21f, and the supply of bubbles BB from bubble supply pipes 21c and 21d is stopped.

For example, if the processing volume of the central portion A1 of the substrate before immersion is greater than the processing volume of the intermediate portion A2 and the edge portion A3 of the substrate before immersion, the supply of bubbles BB from bubble supply pipes 21c and 21d is stopped, and bubbles BB are supplied from bubble supply pipes 21a, 21b, 21e, and 21f.

For example, if the processing volume of the intermediate portion A2 of the substrate before immersion is greater than the processing volume of the central portion A1 of the substrate and the edge portion A3 of the substrate before immersion, the supply of bubbles BB from bubble supply pipes 21b and 21e is stopped, and bubbles BB are supplied from bubble supply pipes 21a, 21c, 21d, and 21f.

For example, if the processing volume of the substrate edge A3 before immersion is greater than the processing volume of the substrate center A1 and intermediate substrate A2 before immersion, the supply of bubbles BB from the bubble supply pipes 21a and 21f is stopped, and bubbles BB are supplied from the bubble supply pipes 21b to 21e. Any combination of supplying and stopping bubbles BB from each of the bubble supply pipes 21a to 21f is possible.

Furthermore, the dissolved oxygen concentration near the substrate center A1, near the substrate middle A2, and near the substrate edge A3 may be adjusted by adjusting the flow rate of the gas GA for generating the bubbles BB for each of the bubble supply pipes 21a-21f based on the thickness of the substrate W before immersion, i.e., the distribution of the processing volume of the substrate W before immersion. In other words, the dissolved oxygen concentration near the substrate center A1, near the substrate middle A2, and near the substrate edge A3 may be adjusted by adjusting the amount and/or number of the bubbles BB for each of the bubble supply pipes 21a-21f based on the thickness of the substrate W before immersion, i.e., the distribution of the processing volume of the substrate W before immersion.

For example, if the processing volume of the substrate central portion A1 before immersion is less than the processing volume of the substrate intermediate portion A2 and substrate edge portion A3 before immersion, the flow rate of gas GA supplied to each of the bubble supply pipes 21c and 21d is made relatively higher than the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21b, 21e, and 21f. As a result, the amount of bubbles BB from each of the bubble supply pipes 21c and 21d becomes relatively larger, and the dissolved oxygen concentration near the substrate central portion A1 also becomes relatively lower. As a result, the processing volume of the substrate central portion A1 becomes relatively higher, improving the within-surface uniformity of the processing volume of the substrate W.

For example, if the processing volume of the intermediate portion A2 of the substrate before immersion is less than the processing volume of the central portion A1 and the edge portion A3 of the substrate before immersion, the flow rate of the gas GA supplied to each of the bubble supply pipes 21b and 21e is made relatively higher than the flow rate of the gas GA supplied to each of the bubble supply pipes 21a, 21c, 21d, and 21f. As a result, the amount of bubbles BB from each of the bubble supply pipes 21b and 21e becomes relatively larger, and the dissolved oxygen concentration near the intermediate portion A2 of the substrate also becomes relatively lower. As a result, the processing volume of the intermediate portion A2 of the substrate becomes relatively higher, improving the in-plane uniformity of the processing volume of the substrate W.

For example, if the processing volume of the substrate edge A3 before immersion is less than the processing volume of the substrate center A1 and intermediate substrate A2 before immersion, the flow rate of gas GA supplied to each of the bubble supply pipes 21a and 21f is made relatively higher than the flow rate of gas GA supplied to each of the bubble supply pipes 21b-21e. As a result, the amount of bubbles BB from each of the bubble supply pipes 21a and 21f becomes relatively larger, and the dissolved oxygen concentration near the substrate edge A3 also becomes relatively lower. As a result, the processing volume of the substrate edge A3 becomes relatively higher, improving the in-plane uniformity of the processing volume of the substrate W.

For example, if the processing volume of the substrate middle portion A2 and substrate edge portion A3 before immersion is less than the processing volume of the substrate center portion A1 before immersion, the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21b, 21e, and 21f is set relatively higher than the flow rate of gas GA supplied to each of the bubble supply pipes 21c and 21d. Any combination of flow rates of gas GA supplied to each of the bubble supply pipes 21a to 21f is also possible.

For example, if the processing volume of the central portion A1 of the substrate before immersion is greater than the processing volume of the intermediate portion A2 and the edge portion A3 of the substrate before immersion, the flow rate of the gas GA supplied to each of the bubble supply pipes 21c and 21d is made relatively smaller than the flow rate of the gas GA supplied to each of the bubble supply pipes 21a, 21b, 21e, and 21f.

For example, if the processing volume of the intermediate portion A2 of the substrate before immersion is greater than the processing volume of the central portion A1 of the substrate and the edge portion A3 of the substrate before immersion, the flow rate of the gas GA supplied to each of the bubble supply pipes 21b and 21e is made relatively smaller than the flow rate of the gas GA supplied to each of the bubble supply pipes 21a, 21c, 21d, and 21f.

For example, if the processing volume of the substrate edge A3 before immersion is greater than the processing volume of the substrate center A1 and intermediate substrate A2 before immersion, the flow rate of gas GA supplied to each of the bubble supply pipes 21a and 21f is made relatively lower than the flow rate of gas GA supplied to each of the bubble supply pipes 21b to 21e.

The supply of gas GA to the bubble supply pipes 21a to 21f may be adjusted symmetrically as described above (e.g., states ST3, ST13, ST23), or asymmetrically. In other words, the supply of gas GA to the bubble supply pipes 21a to 21f may be adjusted individually for each of the bubble supply pipes 21a to 21f. In yet another way, the bubbles BB from the bubble supply pipes 21a to 21f may be adjusted symmetrically as described above, or asymmetrically. In yet another way, the bubbles BB from the bubble supply pipes 21a to 21f may be adjusted individually for each of the bubble supply pipes 21a to 21f.

In other words, when adjusting the bubbles BB from the bubble supply pipes 21a to 21f while the substrate W is immersed in the alkaline processing liquid LQ (for example, states ST3, ST13, ST23), the flow rate of the gas GA (amount and/or number of bubbles BB) may be different for each of the bubble supply pipes 21a to 21f, or the flow rate of the gas GA (amount and/or number of bubbles BB) for the bubble supply pipes 21a to 21f may be the same.

Furthermore, when adjusting the bubbles BB from the bubble supply pipes 21a-21f while the substrate W is immersed in the alkaline treatment liquid LQ (e.g., states ST3, ST13, ST23), the total flow rate SM1 of the gas GA during immersion may be the same as or different from the total flow rate SM0 of the gas GA before immersion, depending on the thickness distribution of the substrate W before immersion, i.e., the distribution of the processing amount of the substrate W before immersion. The total flow rate SM1 of the gas GA may be greater than or less than the total flow rate SM0 of the gas GA. The total flow rate SM1 of the gas GA indicates the total flow rate of the gas GA supplied to the bubble supply pipes 21a-21f while the substrate W is immersed in the alkaline treatment liquid LQ (e.g., states ST3, ST13, ST23). The total flow rate SM0 of the gas GA indicates the total flow rate of the gas GA supplied to the bubble supply pipes 21a to 21f when the substrate W is not immersed in the alkaline processing liquid LQ (e.g., states ST1, ST11, ST21).

Furthermore, in Figures 7 and 8, the processing of the substrate W by adjusting the bubble BB (e.g., states ST3, ST13, ST23) is performed after the processing in a state in which the bubble BB is supplied from all of the bubble supply pipes 21a to 21f (e.g., states ST2, ST12, ST22). However, the timing of the processing of the substrate W by adjusting the bubble BB is not particularly limited.

For example, processing of the substrate W by adjusting the amount of bubbles BB may be performed before processing with bubbles BB supplied from all of the bubble supply pipes 21a to 21f. Alternatively, processing of the substrate W by adjusting the amount of bubbles BB may be performed independently without processing with bubbles BB supplied from all of the bubble supply pipes 21a to 21f.

Furthermore, the execution time (third predetermined time) of processing the substrate W by adjusting the bubbles BB (e.g., states ST3, ST13, ST23) can be set arbitrarily depending on the processing amount of the substrate W before immersion. Furthermore, when processing the substrate W by adjusting the bubbles BB, the supply time and/or supply timing of the bubbles BB may be different for each of the bubble supply pipes 21a to 21f.

As explained above with reference to Figures 1 to 9, the processing amount is selectively adjusted for each region of the surface of the substrate W (substrate center A1, substrate intermediate region A2, substrate edge A3) by adjusting the bubbles BB from each bubble supply pipe 21. This will be explained as the processing of the control unit 221 in Figure 1.

In other words, the control unit 221 controls the bubble adjustment unit 180 to control the control object (hereinafter referred to as the "control object CN") for adjusting the bubble BB for each bubble supply pipe 21. In this case, the control object CN includes at least one of the flow rate of the gas GA supplied to the bubble supply pipe 21, the timing of supplying the gas GA to the bubble supply pipe 21, and the period of supplying the gas GA to the bubble supply pipe 21.

According to the first embodiment, by controlling at least one of the flow rate of the gas GA, the supply timing of the gas GA, and the supply period of the gas GA for each bubble supply pipe 21, the amount and/or number of bubbles BB can be adjusted for each bubble supply pipe 21. In other words, by controlling at least one of the flow rate of the gas GA, the supply timing of the gas GA, and the supply period of the gas GA for each bubble supply pipe 21, the distribution of the dissolved oxygen concentration in the alkaline processing liquid LQ in the processing bath 110 can be controlled. As a result, the distribution of the processing amount of the substrate W during immersion can be controlled according to the distribution of the processing amount of the substrate W before immersion (i.e., the processing amount of the substrate W in the pre-processing). This improves the in-plane uniformity of the processing amount of the substrate W. For example, in the first embodiment, after processing the substrate W by immersion in the alkaline processing liquid LQ, the thickness of the film (e.g., polysilicon film) constituting the substrate W can be made substantially constant across the entire surface of the substrate W.

Specifically, the control unit 221 controls the control target CN for adjusting the bubble BB for each bubble supply pipe 21 by individually controlling the multiple bubble adjustment mechanisms 182. In this case, the control unit 221 may vary the flow rate of the gas GA, the supply timing of the gas GA, and/or the supply period of the gas GA for each bubble supply pipe 21 by individually controlling the multiple bubble adjustment mechanisms 182.

More specifically, the control unit 221 controls the control object CN for each bubble supply pipe 21 based on a physical quantity indicating the processing amount of the substrate W before the substrate W is immersed in the alkaline processing liquid LQ. The processing amount of the substrate W before immersion in the alkaline processing liquid LQ indicates the processing amount of the substrate W in the pre-processing. In this case, the processing amount of the substrate W indicates, for example, the etching amount or etching rate of the object TG constituting the substrate W (e.g., the substrate W itself, the substrate body, a film, or a layer). Furthermore, the physical quantity indicating the processing amount of the substrate W may be the processing amount of the substrate W itself, the processing amount of the object TG constituting the substrate W, the thickness of the substrate W itself, or the thickness of the object TG constituting the substrate W.

According to embodiment 1, the control target CN is controlled for each bubble supply pipe 21 based on a physical quantity indicating the processing amount of the substrate W before immersion in the alkaline processing liquid LQ, so that the substrate W can be processed by immersing it in the alkaline processing liquid LQ in accordance with the processing amount of the substrate W before immersion. As a result, the in-plane uniformity of the processing amount of the substrate W can be further effectively improved.

More specifically, the control unit 221 controls the control target CN for each bubble supply pipe 21 based on the distribution of physical quantities that indicate the processing amount of the substrate W before the substrate W is immersed in the alkaline processing liquid LQ. In this case, the distribution of physical quantities that indicate the processing amount of the substrate W before immersion in the alkaline processing liquid LQ is the distribution of "physical quantities that indicate the processing amount" within the surface of the substrate W.

Next, a substrate processing method according to embodiment 1 will be described with reference to FIGS. 1 and 10. The substrate processing method is performed by the substrate processing apparatus 100. FIG. 10 is a flowchart showing the substrate processing method according to embodiment 1. As shown in FIG. 10, the substrate processing method includes steps S1 to S10. Steps S1 to S10 are performed under the control of the control unit 221.

First, in step S1, the alkaline processing liquid LQ in the processing tank 110 is replaced. For example, the control unit 221 replaces the alkaline processing liquid LQ in the processing tank 110 by controlling the substrate holding unit 120, the processing liquid introduction unit 130, the circulation unit 140, the processing liquid supply unit 150, the dilution liquid supply unit 160, and the drainage unit 170.

Next, in step S2, the treatment liquid introduction section 130 generates a laminar flow of the alkaline treatment liquid LQ and begins introducing the alkaline treatment liquid LQ into the treatment tank 110. As a result, circulation of the alkaline treatment liquid LQ begins in the treatment tank 110. Step S2 corresponds to an example of the "treatment liquid introduction step" of the present invention.

Next, in step S3, the bubble supply unit 200 starts supplying bubbles BB from all of the bubble supply pipes 21 while the alkaline treatment liquid LQ is stored in the treatment tank 110. In other words, the bubble adjustment unit 180 supplies gas GA to all of the bubble supply pipes 21, thereby supplying bubbles BB to the alkaline treatment liquid LQ from all of the bubble supply pipes 21. Step S3 corresponds to an example of the "bubble supply step" of the present invention. This is because step S3 continues until step S6.

Next, in step S4, the thickness measurement unit 210 measures the thickness of the substrate W before the substrate W is immersed in the alkaline treatment liquid LQ. Specifically, the thickness measurement unit 210 measures the thickness distribution (in-plane distribution) of the substrate W before the substrate W is immersed. The memory unit 223 stores information indicating the thickness distribution of the substrate W before immersion. More specifically, the thickness of the substrate W is the thickness of the target object TG that constitutes the substrate W. Because pre-processing has been performed on the substrate W before immersion, the thickness of the substrate W after pre-processing is measured in step S4. Hereinafter, the thickness of the substrate W before immersion refers to the thickness of the substrate W after pre-processing and before immersion. Information indicating the thickness distribution of the substrate W before immersion can be used as learning data for machine learning.

Next, in step S5, the control unit 221 obtains the processing amount of the substrate W before immersion in the alkaline processing liquid LQ based on the measurement results of the thickness measurement unit 210. Specifically, the control unit 221 obtains the processing amount of the substrate W due to the preliminary processing by calculating the difference between the thickness of the substrate W before the preliminary processing and the thickness of the substrate W before immersion (after the preliminary processing). As a result, the distribution of the processing amounts of the substrate W due to the preliminary processing is obtained. The memory unit 223 stores information indicating the distribution of the processing amounts of the substrates W (substrates W before immersion) due to the preliminary processing. The processing amount of the substrate W indicates, for example, the etching amount of the substrate W. The information indicating the distribution of the processing amounts of the substrates W (substrates W before immersion) due to the preliminary processing is used as learning data for machine learning.

Next, in step S6, the substrate holder 120 immerses multiple substrates W in the alkaline processing liquid LQ stored in the processing bath 110. In this case, while the substrates W are immersed in the alkaline processing liquid LQ, the bubble supply unit 200 supplies bubbles BB from each of multiple bubble holes G provided in the bubble supply pipe 21 to the alkaline processing liquid LQ from below the substrates W. In step S6, bubbles BB are supplied from all of the bubble supply pipes 21. After step S6 has been performed for a second predetermined time, the process proceeds to step S7. Step S6 corresponds to an example of the "immersion step" of the present invention.

Next, in step S7, the bubble adjustment unit 180 adjusts the bubbles BB supplied from each bubble supply pipe 21 based on the distribution of the processing amount of the substrate W before immersion in the alkaline processing liquid LQ. Specifically, the bubble adjustment unit 180 adjusts the bubbles BB for each bubble supply pipe 21. More specifically, the bubble adjustment unit 180 adjusts the bubbles BB for each bubble supply pipe 21 by controlling the control target CN for adjusting the bubbles BB for each bubble supply pipe 21. The control target CN includes at least one of the flow rate of the gas GA, the supply timing of the gas GA, and the supply period of the gas GA. After the adjustment of the bubbles BB is confirmed in step S7, the process proceeds to step S8 when the immersion for the third predetermined time is completed. "Adjustment of the bubbles BB has been confirmed" indicates that the setting of each bubble adjustment mechanism 182 of the bubble adjustment unit 180 has been completed. Step S7 corresponds to an example of the "bubble adjustment process" of the present invention.

Next, in step S8, the substrate holder 120 lifts multiple substrates W from the alkaline processing liquid LQ stored in the processing bath 110.

Next, in step S9, the thickness measurement unit 210 measures the thickness of the substrate W after immersion in the alkaline treatment liquid LQ. "After immersion of the substrate W" refers to "after the substrate W has been immersed, processing has been completed, and the substrate W has been lifted out of the alkaline treatment liquid LQ." Specifically, the thickness measurement unit 210 measures the thickness distribution (in-plane distribution) of the substrate W after the substrate W has been lifted out. The memory unit 223 stores information indicating the thickness distribution of the substrate W after immersion. More specifically, the thickness of the substrate W is the thickness of the target object TG that constitutes the substrate W. The information indicating the thickness distribution of the substrate W after immersion can be used as learning data for machine learning. The memory unit 223 also stores information on the control target CN (the flow rate of the gas GA, the supply timing of the gas GA, and the supply period of the gas GA) for each bubble supply pipe 21 (each bubble adjustment mechanism 182). The information on the control target CN is used as learning data for machine learning.

Next, in step S10, the control unit 221 acquires the processing amount of the substrate W after immersion in the alkaline processing liquid LQ based on the measurement results of the thickness measurement unit 210. "After immersion of the substrate W" refers to "after the substrate W has been immersed, processing has been completed, and the substrate W has been pulled up from the alkaline processing liquid LQ." Specifically, the control unit 221 acquires the processing amount of the substrate W due to immersion by calculating the difference between the thickness of the substrate W before immersion and the thickness of the substrate W after immersion. As a result, the distribution of the processing amount of the substrate W due to immersion is obtained. The processing amount of the substrate W indicates, for example, the etching amount of the substrate W. The memory unit 223 stores information indicating the distribution of the processing amount of the substrate W after immersion. The information indicating the distribution of the processing amount of the substrate W after immersion is used as learning data for machine learning. After step S10, the processing proceeds to step S3.

As described above with reference to FIG. 10 , according to the substrate processing method of embodiment 1, the substrate W is processed with the alkaline processing liquid LQ while the bubbles BB are supplied. Therefore, the dissolved oxygen concentration in the alkaline processing liquid LQ can be reduced. As a result, the substrate W can be effectively processed with the alkaline processing liquid LQ.

Furthermore, in the substrate processing method according to embodiment 1, the bubbles BB are adjusted for each bubble supply pipe 21. Therefore, the amount and/or number of bubbles BB can be adjusted for each bubble supply pipe 21 according to the distribution of the processing amount of the substrate W before immersion. As a result, the distribution of the dissolved oxygen concentration in the alkaline processing liquid LQ can be controlled according to the distribution of the processing amount of the substrate W before immersion. Therefore, the processing amount by the alkaline processing liquid LQ can be adjusted according to the distribution of the processing amount of the substrate W before immersion, and the in-plane uniformity of the processing amount of the substrate W can be improved.

Next, the contact angles θa1 and θa2 of the bubble supply pipe 21, which exhibit hydrophilicity, will be described with reference to Figure 11. Figure 11(a) shows an example of the contact angle θa1 (hydrophilicity) of the material SL1 of the bubble supply pipe 21 in the gas GS.

As shown in FIG. 11(a), the material SL1 of the bubble supply pipe 21 is preferably hydrophilic. In other words, the bubble supply pipe 21 is preferably hydrophilic. Being hydrophilic means that the contact angle θa1 is less than 90 degrees. The contact angle θa1 is the contact angle of the material SL1 of the bubble supply pipe 21 with the alkaline treatment liquid LQ. In other words, the contact angle θa1 is the contact angle of the bubble supply pipe 21 with the alkaline treatment liquid LQ. Specifically, the contact angle θa1 is the contact angle at the point of contact between the gas GS, the alkaline treatment liquid LQ, and the material SL1 (bubble supply pipe 21). The gas GS is, for example, air or an inert gas. The inert gas is, for example, nitrogen or argon.

For example, the contact angle θa1 of the material SL1 of the bubble supply pipe 21 may be defined as the contact angle of the bubble supply pipe 21 with water. The water is, for example, pure water. Even when the contact angle θa1 is defined as the contact angle of the bubble supply pipe 21 with water, it is preferable that the contact angle θa1 be less than 90 degrees.

Next, the contact angle θa2 in the alkaline treatment liquid LQ will be described. Figure 11(b) is a diagram showing the contact angle θa2 (hydrophilicity) of the bubble supply pipe 21 in the alkaline treatment liquid LQ.

11(b), in embodiment 1, bubbles BB are supplied to the alkaline treatment liquid LQ from the bubble hole G of the bubble supply pipe 21. Therefore, there are interfaces between the bubble BB and the alkaline treatment liquid LQ, between the bubble BB and the bubble supply pipe 21, and between the bubble supply pipe 21 and the alkaline treatment liquid LQ. As a result, there is a contact angle θa2 of the bubble supply pipe 21 with the alkaline treatment liquid LQ in the alkaline treatment liquid LQ. In other words, there is a contact angle θa2 of the material SL1 of the bubble supply pipe 21 with the alkaline treatment liquid LQ in the alkaline treatment liquid LQ. Specifically, the contact angle θa2 is the contact angle at the point of contact between the bubble BB, the alkaline treatment liquid LQ, and the bubble supply pipe 21.

The contact angle θa2 in the alkaline processing liquid LQ (FIG. 11(b)) is shown as the contact angle θa1 in the gas GS (FIG. 11(a)). In other words, the contact angle θa2 is equal to the contact angle θa1. Therefore, when there is no need to distinguish between the contact angles θa1 and θa2, the contact angles θa1 and θa2 may be referred to individually or collectively as the "contact angle θa."

11(a) and 11(b), when the bubble supply pipe 21 is hydrophilic, for example, when two adjacent bubble holes G (FIG. 5) in the first direction D10 (FIG. 5) are present, bubbles BB supplied from one bubble hole G and bubbles BB supplied from the other bubble hole G can be prevented from combining on the surface of the bubble supply pipe 21. As a result, the generation of bubbles BB with a relatively large volume (size) can be prevented. Therefore, bubbles BB with a relatively large volume can be prevented from being supplied to the alkaline treatment liquid LQ. In other words, bubbles BB with a relatively small volume can be supplied to the alkaline treatment liquid LQ from each of the multiple bubble holes G. Therefore, the dissolved oxygen concentration in the alkaline treatment liquid LQ can be more effectively reduced. As a result, a substrate W immersed in the alkaline treatment liquid LQ can be more effectively treated (e.g., etched) with the alkaline treatment liquid LQ. In other words, the amount of substrate W treated (e.g., etching amount) with the alkaline treatment liquid LQ can be increased.

Furthermore, by supplying bubbles BB with a relatively small volume (size) to the alkaline processing liquid LQ from each of the multiple bubble holes G (Figure 5), the alkaline processing liquid LQ that comes into contact with the surface of the substrate W can be effectively replaced with fresh alkaline processing liquid LQ. As a result, when a surface pattern including recesses is formed on the surface of the substrate W, the alkaline processing liquid LQ in the recesses can be effectively replaced with fresh alkaline processing liquid LQ by the diffusion phenomenon. Therefore, the wall surfaces within the recesses of the surface pattern can be more effectively treated (e.g., etched) with the alkaline processing liquid LQ from shallow to deep positions.

Furthermore, by supplying bubbles BB with a relatively small volume (size) to the alkaline processing liquid LQ from each of the multiple bubble holes G (Figure 5), it is possible to effectively suppress variations in the processing amount within the surface of the substrate W, and it is also possible to effectively suppress variations in the processing amount of substrates W between lots.

In particular, the higher the hydrophilicity of the bubble supply pipe 21, the more preferable. In other words, the smaller the contact angle θa of the bubble supply pipe 21, the more preferable. According to this preferred example, for example, of two bubble holes G (FIG. 5) adjacent in the first direction D10 (FIG. 5), bubbles BB supplied from one bubble hole G and bubbles BB supplied from the other bubble hole G can be more effectively prevented from combining on the surface of the bubble supply pipe 21. As a result, bubbles BB with smaller volumes (sizes) can be supplied to the alkaline processing liquid LQ from each of the multiple bubble holes G. This makes it possible to achieve more effective processing of substrates W, more effective processing from shallow to deep positions on the substrates W, more effective suppression of variations in the processing amount within the surface of the substrates W, and more effective suppression of variations in the processing amount of substrates W between lots.

Specifically, the contact angle θa of the bubble supply pipe 21 is preferably 85 degrees or less, more preferably 80 degrees or less, more preferably 75 degrees or less, more preferably 70 degrees or less, more preferably 65 degrees or less, more preferably 60 degrees or less, more preferably 55 degrees or less, more preferably 50 degrees or less, more preferably 45 degrees or less, more preferably 40 degrees or less, more preferably 35 degrees or less, more preferably 30 degrees or less, more preferably 25 degrees or less, more preferably 20 degrees or less, more preferably 15 degrees or less, more preferably 10 degrees or less, and more preferably 5 degrees or less.

For example, the material SL1 of the bubble supply pipe 21 is preferably PEEK (polyether ether ketone). The contact angle θa of PEEK is approximately 80 degrees. In this way, by using PEEK as the material SL1 of the bubble supply pipe 21, it is possible to easily impart hydrophilic properties to the bubble supply pipe 21.

For example, it is more preferable that the material SL1 of the bubble supply pipe 21 is quartz. The contact angle θa of quartz is approximately 10 degrees. In this way, by using quartz as the material SL1 of the bubble supply pipe 21, it is possible to impart high hydrophilicity to the bubble supply pipe 21.

It is preferable that the bubble supply pipe 21 be hydrophilic, but the bubble supply pipe 21 may also be hydrophobic.

Next, the contact angles θb1 and θb2 of the bubble supply pipe 21, which indicate hydrophobicity, will be explained with reference to Figure 12. Figure 12(a) shows an example of the contact angle θb1 (hydrophobicity) of the material SL2 of the bubble supply pipe 21 in the gas GS.

As shown in FIG. 12(a), the material SL2 of the bubble supply pipe 21 may be hydrophobic. In other words, the bubble supply pipe 21 may be hydrophobic. Being hydrophobic means that the contact angle θb1 is 90 degrees or greater. The contact angle θb1 is the contact angle of the material SL2 of the bubble supply pipe 21 with the alkaline treatment liquid LQ. In other words, the contact angle θb1 is the contact angle of the bubble supply pipe 21 with the alkaline treatment liquid LQ. Specifically, the contact angle θb1 is the contact angle at the point of contact between the gas GS, the alkaline treatment liquid LQ, and the material SL2 (bubble supply pipe 21).

For example, the contact angle θb1 of the material SL2 of the bubble supply pipe 21 may be defined as the contact angle of the bubble supply pipe 21 with water. The water may be, for example, pure water. Even when the contact angle θb1 is defined as the contact angle of the bubble supply pipe 21 with water, the contact angle θb1 may be 90 degrees or greater.

Next, the contact angle θb2 in the alkaline treatment liquid LQ will be described. Figure 12(b) is a diagram showing the contact angle θb2 (hydrophobicity) of the bubble supply pipe 21 in the alkaline treatment liquid LQ.

12(b), in embodiment 1, bubbles BB are supplied to the alkaline treatment liquid LQ from the bubble hole G of the bubble supply pipe 21. Therefore, there are interfaces between the bubble BB and the alkaline treatment liquid LQ, between the bubble BB and the bubble supply pipe 21, and between the bubble supply pipe 21 and the alkaline treatment liquid LQ. As a result, there is a contact angle θb2 of the bubble supply pipe 21 with the alkaline treatment liquid LQ in the alkaline treatment liquid LQ. In other words, there is a contact angle θb2 of the material SL2 of the bubble supply pipe 21 with the alkaline treatment liquid LQ in the alkaline treatment liquid LQ. Specifically, the contact angle θb2 is the contact angle at the point of contact between the bubble BB, the alkaline treatment liquid LQ, and the bubble supply pipe 21.

The contact angle θb2 in the alkaline processing liquid LQ (FIG. 12(b)) is shown as the contact angle θb1 in the gas GS (FIG. 12(a)). In other words, the contact angle θb2 is equal to the contact angle θb1. Therefore, when there is no need to distinguish between the contact angles θb1 and θb2, the contact angles θb1 and θb2 may be referred to individually or collectively as the "contact angle θb."

For example, the material SL2 of the bubble supply pipe 21 may be PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer). The contact angle θb of PFA is approximately 110 degrees.

(Embodiment 2)
A substrate processing apparatus 100 according to a second embodiment of the present invention will be described with reference to Figures 1 and 13 to 16. The main difference between the first embodiment and the second embodiment is that the second embodiment uses a trained model LM to adjust the bubbles BB from each bubble supply pipe 21. The following mainly describes the differences between the second embodiment and the first embodiment.

Figure 13 is a block diagram showing the control device 220 of the substrate processing apparatus 100 according to embodiment 2. The control device 220 is, for example, a computer. As shown in Figure 13, the control device 220 includes a control unit 221, a memory unit 223, a communication unit 225, an input unit 227, and a display unit 229. The communication unit 225 is connected to a network and communicates with external devices. Networks include, for example, the Internet, a LAN, a public telephone network, and a short-range wireless network. The communication unit 225 is a communication device, for example, a network interface controller. The communication unit 225 may include a wired communication module or a wireless communication module. The input unit 227 is an input device for inputting various information to the control unit 221. For example, the input unit 227 is a keyboard and pointing device, or a touch panel. The display unit 229 displays images. For example, the display unit 229 is a liquid crystal display or an organic electroluminescence display.

The memory unit 223 stores a control program PG1, recipe information RC, and a learned model LM. The control unit 221 executes the control program PG1 to treat the substrate W with the alkaline treatment liquid LQ in accordance with the recipe information RC. The recipe information RP defines the treatment content and treatment procedure for the substrate W. Specifically, by executing the control program PG1, the control unit 221 controls the memory unit 223, communication unit 225, input unit 227, display unit 229, and the substrate holder 120, treatment liquid introduction unit 130, circulation unit 140, treatment liquid supply unit 150, dilution liquid supply unit 160, drainage unit 170, bubble adjustment unit 180, exhaust piping unit 190, bubble supply unit 200, and thickness measurement unit 210 shown in FIG. 1 . The control unit 221 also executes the control program PG1 to activate the learned model LM.

The trained model LM is constructed by learning training data (hereinafter referred to as "training data DT").

The learning data DT includes pre-immersion treatment information K1 and post-immersion treatment information K2. The pre-immersion treatment information K1 is information on physical quantities indicating the treatment amount of the learning target substrate Wa before immersion in the alkaline treatment liquid LQ. The configuration of the learning target substrate Wa is the same as the configuration of the substrate W. The physical quantity information indicating the treatment amount of the learning target substrate Wa before immersion in the alkaline treatment liquid LQ is similar to the physical quantity information indicating the treatment amount of the substrate W before immersion in the alkaline treatment liquid LQ. The post-immersion treatment information K2 is information on physical quantities indicating the treatment amount of the learning target substrate Wa after immersion in the alkaline treatment liquid LQ and being pulled out of the alkaline treatment liquid LQ. The physical quantity information indicating the treatment amount of the learning target substrate Wa after immersion in the alkaline treatment liquid LQ and being pulled out of the alkaline treatment liquid LQ is similar to the physical quantity information indicating the treatment amount of the substrate W after immersion in the alkaline treatment liquid LQ and being pulled out of the alkaline treatment liquid LQ.

The learning data DT further includes at least one of flow rate information M1 indicating the flow rate of the gas GA supplied to the bubble supply pipe 21 when the learning target substrate Wa is immersed in the alkaline treatment liquid LQ, timing information M2 indicating the timing of supplying the gas GA to the bubble supply pipe 21, and period information M3 indicating the period of time during which the gas GA is supplied to the bubble supply pipe 21.

The pre-immersion treatment information K1 is an explanatory variable. In other words, the pre-immersion treatment information K1 is a feature quantity. The post-immersion treatment information K2, flow rate information M1, timing information M2, and period information M3 are objective variables. For example, a "normal label" is added to the objective variables. In other words, the flow rate information M1, timing information M2, and period information M3 are information in the objective variables when the "physical quantity indicating the processing amount of the substrate W" indicated by the post-immersion treatment information K2 is recognized as "normal." The trained model LM in embodiment 2 is generated by "supervised" learning.

The control unit 221 inputs input information IF1 to the learned model LM and obtains output information IF2 from the learned model LM. The input information IF1 includes information on physical quantities indicating the processing amount of the substrate W before immersion in the alkaline processing liquid LQ. The output information IF2 includes information indicating the control object CN. The control object CN includes at least one of the flow rate of the gas GA supplied to the bubble supply pipe 21, the timing of supplying the gas GA to the bubble supply pipe 21, and the period of supplying the gas GA to the bubble supply pipe 21 when the substrate W is immersed in the alkaline processing liquid LQ.

The control unit 221 adjusts the bubbles BB for each bubble supply pipe 21 based on the output information IF2. Specifically, the control unit 221 controls each bubble adjustment mechanism 182 included in the bubble adjustment unit 180 to the setting indicated by the output information IF2, thereby controlling the control target CN for each bubble adjustment mechanism 182. As a result, the bubbles BB are adjusted for each bubble supply pipe 21 in accordance with the distribution of physical quantities indicating the processing amount of the substrate W before immersion, thereby making it possible to suitably adjust the distribution of the dissolved oxygen concentration in the alkaline processing liquid LQ. Therefore, according to embodiment 2, the in-plane uniformity of the processing amount of the substrate W due to immersion in the alkaline processing liquid LQ can be improved.

Furthermore, because the output information IF2 from the trained model LM is used, the control object CN (flow rate of the gas GA, supply timing of the gas GA, and supply period of the gas GA) can be set with high precision for each bubble supply pipe 21. In other words, the control unit 221 can set each bubble adjustment mechanism 182 with high precision to set the distribution of dissolved oxygen concentration in the alkaline processing liquid LQ in the processing bath 110 according to the distribution of physical quantities indicating the processing amount of the substrate W.

Next, a substrate processing method according to embodiment 2 will be described with reference to Figures 13 and 14. Figure 14 is a flowchart showing the substrate processing method according to embodiment 2. The substrate processing method is performed by the substrate processing apparatus 100. As shown in Figure 14, the substrate processing method includes steps S21 to S32.

Steps S21 to S25 are similar to steps S1 to S5 shown in Figure 10, respectively, and will not be described further. After step S25, processing proceeds to step S26.

Next, in step S26, the control unit 221 inputs input information IF1 to the learned model LM. The input information IF1 is information indicating the distribution of the processing amounts of the substrates W before immersion in the alkaline processing liquid LQ. Specifically, the information indicating the distribution of the processing amounts of the substrates W is information on physical quantities indicating the distribution of the processing amounts of the substrates W. The memory unit 223 stores the input information IF1. The input information IF1 can be used as learning data for machine learning. Step S26 constitutes part of the "bubble adjustment step" of the present invention.

Next, in step S27, the control unit 221 acquires output information IF2 from the learned model LM. The output information IF2 includes information indicating the control object CN. The control object CN includes at least one of the flow rate of the gas GA, the supply timing of the gas GA, and the supply period of the gas GA when the substrate W is immersed in the alkaline processing liquid LQ. The memory unit 223 stores the output information IF2. The output information IF2 can be used as learning data for machine learning. Step S27 constitutes part of the "gas bubble adjustment step" of the present invention.

Next, in step S28, the substrate holder 120 immerses multiple substrates W in the alkaline processing liquid LQ stored in the processing bath 110. Step S28 corresponds to an example of the "immersion step" of the present invention. Otherwise, step S28 is similar to step S6 in Figure 10.

Next, in step S29, the control unit 221 individually controls each bubble adjustment unit 180 based on the output information IF2 (information indicating the control target CN) acquired from the trained model LM, thereby individually adjusting the bubble BB from each bubble supply pipe 21. After the adjustment of the bubble BB is confirmed in step S29, once the third predetermined time of immersion is complete, the process proceeds to step S30. "Adjustment of bubble BB confirmed" indicates that the setting of each bubble adjustment mechanism 182 of the bubble adjustment unit 180 has been completed. Step S29 constitutes part of the "bubble adjustment process" of the present invention.

Next, steps S30 to S32 are executed. Steps S30 to S32 are similar to steps S8 to S10 in Figure 10, respectively, and so a detailed description will be omitted. After step S10, processing proceeds to step S23.

Next, a learning device 320 according to embodiment 2 will be described with reference to FIG. 15. The learning device 320 is, for example, a computer. FIG. 15 is a block diagram showing the learning device 320. As shown in FIG. 15, the learning device 320 includes a processing unit 321, a memory unit 323, a communication unit 325, an input unit 327, and a display unit 329.

The processing unit 321 includes a processor such as a CPU and a GPU. The memory unit 323 includes a storage device and stores data and computer programs. The processor of the processing unit 321 executes the computer programs stored in the storage device of the memory unit 323 to perform various processes. For example, the memory unit 323, like the memory unit 223 (Figure 13), includes a main storage device and an auxiliary storage device, and may also include removable media. The memory unit 323 is, for example, a non-transitory computer-readable storage medium.

The communication unit 325 is connected to a network and communicates with external devices. The communication unit 325 is a communication device, such as a network interface controller. The communication unit 325 may have a wired communication module or a wireless communication module. The input unit 327 is an input device for inputting various information to the processing unit 321. For example, the input unit 327 is a keyboard and pointing device, or a touch panel. The display unit 329 displays images. For example, the display unit 329 is a liquid crystal display or an organic electroluminescence display.

Continuing to refer to FIG. 15, the processing unit 321 will be described. The processing unit 321 acquires multiple pieces of learning data DT from an external source. For example, the processing unit 321 acquires multiple pieces of learning data DT from the substrate processing apparatus 100 or learning data creation device according to embodiment 1 or embodiment 2 via the network and the communication unit 325. The learning data creation device generates the learning data DT based on the data acquired from the substrate processing apparatus 100.

The processing unit 321 controls the memory unit 323 to store each piece of learning data DT. As a result, the memory unit 323 stores each piece of learning data DT.

The memory unit 323 stores the learning program PG2. The learning program PG2 is a program for executing a machine learning algorithm to find certain rules from multiple pieces of learning data DT and generate a learned model LM that represents the found rules.

The machine learning algorithm is not particularly limited as long as it is supervised learning, and may be, for example, a decision tree, nearest neighbor method, naive Bayes classifier, support vector machine, or neural network. Therefore, the trained model LM includes a decision tree, nearest neighbor method, naive Bayes classifier, support vector machine, or neural network. Backpropagation may also be used in the machine learning to generate the trained model LM.

For example, a neural network includes an input layer, one or more hidden layers, and an output layer. Specifically, the neural network is a deep neural network (DNN), a recurrent neural network (RNN), or a convolutional neural network (CNN), and performs deep learning. For example, a deep neural network includes an input layer, multiple hidden layers, and an output layer.

The processing unit 321 performs machine learning on multiple pieces of training data DT based on the training program PG2. As a result, certain rules are found from the multiple pieces of training data DT, and a trained model LM is generated. In other words, the trained model LM is constructed by machine learning the training data DT. The memory unit 323 stores the trained model LM.

Specifically, the control unit 221 executes the learning program PG2 to find certain rules between the explanatory variables and the target variables contained in the learning data DT, and generates a learned model LM.

More specifically, the processing unit 321 calculates multiple learned parameters by performing machine learning on multiple pieces of training data DT based on the training program PG2, and generates a trained model LM that includes one or more functions to which the multiple learned parameters are applied. The trained parameters are parameters (coefficients) obtained based on the results of machine learning using multiple pieces of training data DT.

The learned model LM causes the computer to function by inputting input information IF1 and outputting output information IF2. In other words, the learned model LM inputs input information IF1 and outputs output information IF2. Specifically, the learned model LM estimates information about the control object CN when the in-plane uniformity of the processing amount of the substrate W after immersion satisfies a certain standard.

Next, a learning method according to embodiment 2 will be described with reference to Figures 15 and 16. Figure 16 is a flowchart showing the learning method according to embodiment 2. As shown in Figure 16, the learning method includes steps S41 to S44. The learning method is executed by the learning device 320.

As shown in Figures 15 and 16, in step S41, the processing unit 321 of the learning device 320 acquires multiple pieces of learning data DT from the substrate processing device 100 or the learning data creation device.

Next, in step S42, the processing unit 321 performs machine learning on multiple pieces of learning data DT based on the learning program PG2.

Next, in step S43, the processing unit 321 determines whether a learning termination condition is met. The learning termination condition is a predetermined condition for terminating machine learning. For example, the learning termination condition may be that the number of iterations has reached a specified number.

If the result of step S43 is negative, processing proceeds to step S41. As a result, machine learning is repeated.

On the other hand, if the result of step S43 is affirmative, processing proceeds to step S44.

In step S44, the processing unit 321 outputs a model (one or more functions) to which the latest multiple parameters (coefficients), i.e., multiple learned parameters (coefficients), are applied as the learned model LM. The memory unit 323 then stores the learned model LM.

As described above, the learning device 320 executes steps S41 to S44 to generate the trained model LM.

That is, according to embodiment 2, the learning device 320 performs machine learning. Therefore, it is possible to find patterns from extremely complex learning data DT with a huge number of analysis targets, and create a highly accurate learned model LM. The control unit 221 of the control device 220 shown in FIG. 13 inputs input information IF1 including the distribution of the processing amount of the substrate W before immersion to the learned model LM, and causes the learned model LM to output output information IF2 including information on the control target CN. Therefore, it is possible to quickly set each bubble adjustment mechanism 182, and quickly adjust the bubble BB for each bubble supply pipe 21.

Note that the control device 220 in Figures 1 and 13 may also operate as the learning device 320 in Figure 15.

(Embodiment 3)
A substrate processing apparatus 100 according to a third embodiment of the present invention will be described with reference to Figures 1, 13, and 17. The third embodiment differs from the second embodiment mainly in that unsupervised learning is performed in the third embodiment. The following mainly describes the differences between the third embodiment and the second embodiment.

First, a description will be given with reference to Figures 1 and 13. The control unit 221 executes the control program PG1 to start the trained model LM. The trained model LM is constructed by learning the training data DT. The training data DT is the same as the training data DT in embodiment 1, and a description thereof will be omitted.

The control unit 221 inputs the input information IF3 to the learned model LM and obtains the output information IF4 from the learned model LM. The learned model LM clusters the input information IF3 and outputs the output information IF4 indicating the clustering results of the input information IF3. Specifically, the output information IF4 indicates the cluster into which the input information IF3 has been classified. Clustering involves finding similar or correlated information and grouping the similar or correlated information. Therefore, through clustering, similar or correlated information is classified into a single cluster.

The input information IF3 includes information on physical quantities indicating the processing amount of the substrate W before immersion in the alkaline processing liquid LQ, and information indicating the control target CN. The control target CN includes at least one of the flow rate of the gas GA supplied to each bubble supply pipe 21, the timing of supplying the gas GA to each bubble supply pipe 21, and the period of supplying the gas GA to each bubble supply pipe 21 when the substrate W is immersed in the alkaline processing liquid LQ. In embodiment 3, the information on the control target CN included in the input information IF3 is information on the previous control target CN used when previously processing the substrate W by immersion. For example, the information on the control target CN included in the input information IF3 is information on the previous control target CN used when processing the substrate W by the previous immersion.

The control unit 221 controls the control target CN based on the output information IF4. Specifically, if the clustering result of the input information IF3 indicated by the output information IF4 is classified into a cluster indicating "normal processing," the control unit 221 controls the bubbles BB from each bubble supply pipe 21 by controlling each bubble adjustment mechanism 182 using information about the past control target CN indicated by the input information IF3 (for example, the previous control target CN used during the previous processing).

In other words, the control unit 221 adjusts the bubbles BB for each bubble supply pipe 21 by controlling each bubble adjustment mechanism 182 so that the previous setting (e.g., the previous setting) indicated by the input information IF3 is met. As a result, the bubbles BB are adjusted for each bubble supply pipe 21 in accordance with the distribution of physical quantities indicating the processing amount of the substrate W before immersion, thereby making it possible to suitably adjust the distribution of the dissolved oxygen concentration in the alkaline processing liquid LQ. Therefore, according to embodiment 3, it is possible to improve the in-plane uniformity of the processing amount of the substrate W due to immersion in the alkaline processing liquid LQ.

Furthermore, if the clustering result of the input information IF3 indicated by the output information IF4 is classified into a cluster indicating "normal processing," there is no need to reset each bubble adjustment mechanism 182, thereby improving the throughput of processing the substrate W.

Next, a substrate processing method according to embodiment 3 will be described with reference to FIGS. 13 and 17. FIG. 17 is a flowchart showing the substrate processing method according to embodiment 3. The substrate processing method is performed by the substrate processing apparatus 100. As shown in FIG. 17, the substrate processing method includes steps S51 to S62.

Steps S51 to S55 are similar to steps S1 to S5 shown in Figure 10, and their explanations are omitted. After step S55, processing proceeds to step S56.

Next, in step S56, the control unit 221 inputs the input information IF1 into the learned model LM. The input information IF3 includes information indicating the distribution of the processing amounts of the substrates W before immersion in the alkaline processing liquid LQ, and information indicating the control object CN. Specifically, the information indicating the distribution of the processing amounts of the substrates W is information on physical quantities indicating the distribution of the processing amounts of the substrates W. The control object CN includes at least one of the flow rate of the gas GA, the supply timing of the gas GA, and the supply period of the gas GA when the substrates W are immersed in the alkaline processing liquid LQ. The memory unit 223 stores the input information IF3. The input information IF3 can be used as learning data for machine learning. Step S56 constitutes part of the "bubble adjustment step" of the present invention.

Next, in step S57, the control unit 221 acquires output information IF4 from the learned model LM. The output information IF4 includes information indicating the results of clustering the input information IF3. The memory unit 223 stores the output information IF4. The output information IF4 can be used as learning data for machine learning. Step S57 constitutes part of the "bubble adjustment step" of the present invention.

Next, in step S58, the substrate holder 120 immerses multiple substrates W in the alkaline processing liquid LQ stored in the processing bath 110. Step S58 corresponds to an example of the "immersion step" of the present invention. Otherwise, step S58 is similar to step S6 in Figure 10.

Next, in step S59, the control unit 221 controls the control object CN for each bubble supply pipe 21 by individually controlling each bubble adjustment unit 180 based on the output information IF2 (information indicating the clustering results) acquired from the trained model LM. By individually controlling the control object CN for each bubble supply pipe 21, the bubbles BB from each bubble supply pipe 21 are individually adjusted. When the third predetermined time of immersion is completed, the process proceeds to step S60. Step S59 constitutes part of the "bubble adjustment step" of the present invention.

Next, steps S60 to S62 are executed. Steps S60 to S62 are similar to steps S8 to S10 in Figure 10, respectively, and so a detailed description will be omitted. After step S62, processing proceeds to step S53.

Now, with reference to Figure 15, we will explain the learning device 320 according to embodiment 3. The learning program PG2 shown in Figure 15 is a program for executing a machine learning algorithm to find certain rules from multiple pieces of learning data DT and generate a learned model LM that expresses the found rules.

In embodiment 3, the machine learning algorithm is unsupervised learning, such as k-means, k-medoids, hierarchical clustering, self-organizing maps, fuzzy c-means, Gaussian mixture models, or neural networks.

The processing unit 321 performs machine learning on multiple pieces of training data DT based on the training program PG2. As a result, certain rules are discovered from the multiple pieces of training data DT, and a trained model LM is generated.

Specifically, the processing unit 321 calculates multiple learned parameters by performing machine learning on multiple pieces of training data DT based on the training program PG2, and generates a trained model LM that includes one or more functions to which the multiple learned parameters are applied. The trained parameters are parameters (coefficients) obtained based on the results of machine learning using multiple pieces of training data DT.

Note that the processing flow of the learning method according to embodiment 3 is the same as the processing flow of the learning method according to embodiment 2 shown in Figure 16.

Next, the present invention will be described in detail based on examples, but the present invention is not limited to the following examples.

(Example 1 and Example 2)
Examples 1 and 2 of the present invention will be described with reference to Figures 18 to 20. In Examples 1 and 2 of the present invention, the substrate processing apparatus 100 described with reference to Figures 1 and 4 to 6 was used. However, in Examples 1 and 2, the number of bubble supply pipes 21, the number of pipes 181, and the number of bubble adjustment mechanisms 182 were different from those of the substrate processing apparatus 100 described with reference to Figures 1 and 4 to 6.

Figure 18 is a schematic cross-sectional view showing a substrate processing apparatus 100A according to Examples 1 and 2 of the present invention. As shown in Figure 18, in the substrate processing apparatus 100A, the bubble supply unit 200A included eight bubble supply pipes 21. The bubble adjustment unit 180A included eight bubble adjustment mechanisms 182. The substrate processing apparatus 100A also had eight pipes 181. The alkaline processing liquid LQ was TMAH. The TMAH concentration was 0.31%. The gas GA supplied from the pipes 181 to the bubble supply pipes 21 was nitrogen. The flow rate of the nitrogen was 30 L/min in total for the eight pipes 181 (eight bubble supply pipes 21).

Before the substrates W were immersed in the alkaline treatment liquid LQ, the thickness measurement unit 210 measured the thickness of the polysilicon film on the substrates W. Then, one hour after the start of supplying bubbles BB to the alkaline treatment liquid LQ, one lot (25 substrates W) of substrates W was immersed in the alkaline treatment liquid LQ. The immersion time was 140 seconds. After the immersion time had elapsed, the substrates W were lifted out of the alkaline treatment liquid LQ. The thickness measurement unit 210 measured the thickness of the polysilicon film on the substrates W. Furthermore, the control unit 221 obtained the etching amount of the substrates W by subtracting the thickness of the substrates W after being lifted out of the alkaline treatment liquid LQ from the thickness of the polysilicon film on the substrates W before immersion. The control unit 221 then created map images MP1 and MP2 showing the distribution of the etching amount of the substrates W.

In Example 1 of the present invention, of the eight bubble supply pipes 21a to 21h, the supply of bubbles BB from bubble supply pipes 21b, 21d, 21e, and 21g was stopped, and bubbles BB were supplied from bubble supply pipes 21a, 21c, 21f, and 21h. In other words, in Example 1, four bubble supply pipes 21 were used.

Figure 19 is a diagram showing the processing results of a substrate W according to Example 1 of the present invention. Figure 19 shows a map image MP1 of the etching amount on the substrate W. In map image MP1, the sparser the dots, the greater the etching amount. Note that in reality, map image MP1 has a gradation that indicates the etching amount, but for simplicity, the etching amount is shown in five stages.

As can be seen from map image MP1, the variation in the etching amount was within the range of 19.854 angstroms or more and 22.672 angstroms or less. In other words, the supply of bubbles BB from the four bubble supply pipes 21 reduced the dissolved oxygen concentration in the alkaline processing liquid LQ, allowing for effective etching.

In Example 1, the difference between the maximum etching amount (22.672 angstroms) and the minimum etching amount (19.854 angstroms) was 2.818 angstroms.

On the other hand, in Example 2 of the present invention, bubbles BB were supplied from all eight bubble supply pipes 21a to 21h. In other words, eight bubble supply pipes 21 were used in Example 2.

Figure 20 is a diagram showing the processing results of a substrate W according to Example 2 of the present invention. Figure 20 shows a map image MP2 of the etching amount on the substrate W. In map image MP2, the sparser the dots, the greater the etching amount. Note that in reality, map image MP2 has a gradation that indicates the etching amount, but for simplicity, the etching amount is shown in five stages.

As can be seen from map image MP2, the variation in the etching amount was within the range of 21.729 angstroms or more and 22.61 angstroms or less. In other words, the supply of bubbles BB from the eight bubble supply pipes 21 further reduced the dissolved oxygen concentration in the alkaline processing liquid LQ, allowing for even more effective etching.

In Example 2, the difference between the maximum etching amount (22.61 angstroms) and the minimum etching amount (21.729 angstroms) was 0.881 angstroms.

As can be seen from the comparison results between Example 1 and Example 2, the difference between the maximum and minimum etching amounts in Example 2 (0.881 angstroms) was smaller than the difference between the maximum and minimum etching amounts in Example 1 (2.818 angstroms). In other words, the in-plane uniformity of the etching amount of the substrate W in Example 2 was better than the in-plane uniformity of the etching amount of the substrate W in Example 1.

In other words, the greater the number of bubble supply pipes 21 supplying the bubbles BB, the greater the in-plane uniformity of the etching amount of the substrate W. This is presumably because the greater the number of bubble supply pipes 21 supplying the bubbles BB, the greater the number of bubbles BB that rise in the alkaline processing liquid LQ, thereby reducing the dissolved oxygen concentration.

(Examples 3, 4, and 5)
Examples 3 to 5 of the present invention will be described with reference to Figures 21 and 22. In Examples 3 to 5, an approximation model of the bubble supply pipe 21 was created, and the generation behavior of the bubble BB was simulated using the VOF (Volume of Fluid) method. The VOF method is a free surface flow analysis technique.

Figure 21(a) is a perspective view showing a simulation model MD according to Examples 3 to 5 of the present invention. Figure 21(b) is a front view showing a simulation model MD according to Examples 3 to 5 of the present invention.

As shown in FIG. 21(a), the simulation model MD included an air bubble supply pipe model 21m and an alkaline processing liquid model LQm. The air bubble supply pipe model 21m was an approximation model of the outer wall surface of the air bubble supply pipe 21. The air bubble supply pipe model 21m did not include an element for the thickness of the air bubble supply pipe 21. The air bubble supply pipe model 21m had a circular ring shape. The diameter of the air bubble supply pipe model 21m was 6 mm. The air bubble supply pipe model 21m included two air bubble hole models Gm1 and Gm2. Each of the air bubble hole models Gm1 and Gm2 was circular and was an approximation model of the air bubble hole G. The diameter of each of the air bubble hole models Gm1 and Gm2 was 0.2 mm.

As shown in Figure 21 (b), the central angle θx of the arc AC connecting the bubble hole model Gm1 and the bubble hole model Gm2 was 105 degrees.

The alkaline processing liquid model LQm was an approximation model of the alkaline processing liquid LQ. Specifically, the alkaline processing liquid model LQm was an approximation model of TMAH. The bubble supply pipe model 21m was placed in the alkaline processing liquid model LQm.

In Examples 1 to 3, the generation behavior of the bubble BB was simulated by generating the bubble model BBm from the bubble hole models Gm1 and Gm2. The bubble model BBm was an approximation model of the bubble BB made of nitrogen. The flow rate of nitrogen used to generate the bubble model BBm representing the bubble BB was set to 17 m/s.

Figure 22(a) shows the simulation results for Example 3. Figure 22(a) shows the state 0.95 seconds after the start of generation of the air bubble model BBm.

As shown in Figure 22(a), in Example 3, the bubble supply pipe model 21m was hydrophobic. Specifically, the contact angle θb2 (Figure 12(b)) of the bubble supply pipe model 21m with the alkaline processing liquid model LQm was set to 110 degrees. In other words, the contact angle θb2 of the bubble supply pipe 21 was set to 110 degrees, and the generation behavior of the bubble BB was simulated.

In Example 3, the air bubble model BBm supplied from the air bubble hole model Gm1 and the air bubble model BBm supplied from the air bubble hole model Gm2 combined on the surface of the air bubble supply pipe model 21m to generate a single air bubble model BBm. In Example 3, the simulation used air bubble hole models Gm1 and Gm2 aligned in the circumferential direction of the air bubble supply pipe model 21m. However, it can be inferred that the same air bubble BB generation behavior will also occur in an air bubble supply pipe 21 in which the air bubble holes G are aligned in the first direction D10 (Figure 5). Therefore, from Example 3, it can be inferred that if the air bubble supply pipe 21 is hydrophobic, the air bubbles BB supplied from adjacent air bubble holes G (Figure 5) will more easily combine on the outer wall surface of the air bubble supply pipe 21 in the alkaline processing liquid LQ.

Figure 22(b) shows the simulation results for Example 4. Figure 22(b) shows the state 0.95 seconds after the start of generation of the bubble model BBm.

As shown in Figure 22(b), in Example 4, the bubble supply pipe model 21m was hydrophilic. Specifically, the contact angle θa2 of the bubble supply pipe model 21m with the alkaline processing liquid model LQm was set to 80 degrees (Figure 11(b)). In other words, the contact angle θa2 of the bubble supply pipe 21 was set to 80 degrees, and the generation behavior of the bubble BB was simulated.

In Example 4, the bubble model BBm supplied from the bubble hole model Gm1 and the bubble model BBm supplied from the bubble hole model Gm2 separated on the surface of the bubble supply pipe model 21m. In Example 4, the simulation used bubble hole models Gm1 and Gm2 aligned in the circumferential direction of the bubble supply pipe model 21m. However, it can be inferred that similar bubble BB generation behavior occurs in a bubble supply pipe 21 in which the bubble holes G are aligned in the first direction D10 (Figure 5). Therefore, from Example 4, it can be inferred that if the bubble supply pipe 21 is hydrophilic, the bubbles BB supplied from adjacent bubble holes G (Figure 5) are more likely to separate on the outer wall surface of the bubble supply pipe 21 in the alkaline treatment liquid LQ. In other words, it can be inferred that if the bubble supply pipe 21 is hydrophilic, the bubbles BB are more likely to separate on the outer wall surface of the bubble supply pipe 21 in the alkaline treatment liquid LQ than if the bubble supply pipe 21 is hydrophobic. Therefore, it can be inferred that when the bubble supply pipe 21 is hydrophilic, the average volume (size) of the numerous bubbles BB supplied from the multiple bubble holes G is smaller than when the bubble supply pipe 21 is hydrophobic.

Figure 22(c) shows the simulation results for Example 5. Figure 22(c) shows the state 0.95 seconds after the start of generation of the bubble model BBm.

As shown in Figure 22(c), in Example 5, the bubble supply pipe model 21m was hydrophilic. Specifically, the contact angle θa2 of the bubble supply pipe model 21m with respect to the alkaline processing liquid model LQm was set to 10 degrees (Figure 11(b)). In other words, the contact angle θa2 of the bubble supply pipe 21 was set to 10 degrees, and the generation behavior of the bubble BB was simulated.

In Example 5, the bubble model BBm supplied from the bubble hole model Gm1 and the bubble model BBm supplied from the bubble hole model Gm2 were separated on the surface of the bubble supply pipe model 21m. In Example 5, the distance between the bubble model BBm supplied from the bubble hole model Gm1 and the bubble model BBm supplied from the bubble hole model Gm2 was greater than in Example 4. Additionally, the volume (size) of the bubble model BBm was smaller in Example 5 than in Example 4. While Example 5 was a simulation using bubble hole models Gm1 and Gm2 aligned circumferentially around the bubble supply pipe model 21m, it can be inferred that similar bubble BB generation behavior will occur in a bubble supply pipe 21 in which the bubble holes G are aligned in the first direction D10 (Figure 5). Therefore, from Example 5, it can be inferred that the smaller the contact angle θa2 of the hydrophilic bubble supply pipe 21, the more easily the bubbles BB supplied from adjacent bubble holes G (FIG. 5) will separate on the outer wall surface of the bubble supply pipe 21 in the alkaline treatment liquid LQ. As a result, from Example 5, it can be inferred that the smaller the contact angle θa2 of the hydrophilic bubble supply pipe 21, the smaller the average volume (size) of the numerous bubbles BB supplied from the multiple bubble holes G.

Embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

Furthermore, the drawings primarily show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual configuration due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within the scope that does not substantially deviate from the effects of the present invention.

The present invention relates to a substrate processing method and a substrate processing apparatus, and has industrial applicability.

21, 21a to 21h: bubble supply pipe 31: plate 100, 100A: substrate processing apparatus 110: processing bath 120: substrate holder 130: processing liquid introduction section 180: bubble adjustment section 221: control section 223: memory section G, G1 to G3: bubble hole P: processing liquid hole W, W1 to W3: substrate

Claims (15)

1. A substrate processing method performed by a substrate processing apparatus including a processing tank and a plurality of bubble supply pipes disposed inside the processing tank,
an immersion step of immersing a substrate in the alkaline treatment liquid stored in the treatment tank;
a bubble supplying step of supplying bubbles from below the substrate to the alkaline treatment liquid through each of a plurality of bubble holes provided for each of the bubble supply pipes while the substrate is immersed in the alkaline treatment liquid ;
a bubble adjusting step of adjusting the bubbles for each of the bubble supply pipes;
Including,
in the bubble supplying step, gas is supplied to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes;
In the bubble adjusting step, a control target for adjusting the bubbles is controlled for each of the bubble supply pipes, thereby adjusting the bubbles for each of the bubble supply pipes;
In the bubble adjustment step, the control object is controlled for each bubble supply pipe based on a distribution of physical quantities indicating the amount of processing of the substrate before the substrate is immersed in the alkaline processing solution, thereby adjusting the distribution of bubbles on the surface of the substrate . 2. The substrate processing method according to claim 1 , wherein the control target includes at least one of a flow rate of the gas, a supply timing of the gas, and a supply period of the gas. 1. A substrate processing method performed by a substrate processing apparatus including a processing tank and a plurality of bubble supply pipes disposed inside the processing tank,
an immersion step of immersing a substrate in the alkaline treatment liquid stored in the treatment tank;
a bubble supplying step of supplying bubbles from below the substrate to the alkaline treatment liquid through each of a plurality of bubble holes provided for each of the bubble supply pipes while the substrate is immersed in the alkaline treatment liquid;
a bubble adjusting step of adjusting the bubbles for each of the bubble supply pipes;
and
in the bubble supplying step, gas is supplied to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes;
In the bubble adjusting step, the bubbles are adjusted for each of the bubble supply pipes using a trained model constructed by training data;
the learning data includes pre-immersion treatment information and post-immersion treatment information;
the pre-immersion treatment information is information on a physical quantity indicating the amount of treatment of the learning target substrate before immersion in the alkaline treatment liquid,
the post-immersion treatment information is information on a physical quantity that indicates a treatment amount of the learning target substrate after it has been immersed in the alkaline treatment liquid and then removed from the alkaline treatment liquid,
the learning data further includes at least one of flow rate information indicating a flow rate of the gas, timing information indicating a timing of supplying the gas, and period information indicating a period of supplying the gas when the learning target substrate is immersed in the alkaline treatment liquid;
In the bubble adjustment step, input information is input to the trained model, and output information is obtained from the trained model;
the input information includes information on a physical quantity that indicates a treatment amount of the substrate before immersion in the alkaline treatment liquid,
the output information includes information indicating a control target,
the control object includes at least one of a flow rate of the gas, a supply timing of the gas, and a supply period of the gas when the substrate is immersed in the alkaline treatment liquid,
In the bubble adjusting step, the bubbles are adjusted based on the output information. 1. A substrate processing method performed by a substrate processing apparatus including a processing tank and a plurality of bubble supply pipes disposed inside the processing tank,
an immersion step of immersing a substrate in the alkaline treatment liquid stored in the treatment tank;
a bubble supplying step of supplying bubbles from below the substrate to the alkaline treatment liquid through each of a plurality of bubble holes provided for each of the bubble supply pipes while the substrate is immersed in the alkaline treatment liquid;
a bubble adjusting step of adjusting the bubbles for each of the bubble supply pipes;
Including,
in the bubble supplying step, gas is supplied to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes;
In the bubble adjusting step, the bubbles are adjusted for each of the bubble supply pipes using a trained model constructed by training data;
the learning data includes pre-immersion treatment information and post-immersion treatment information;
the pre-immersion treatment information is information on a physical quantity indicating the amount of treatment of the learning target substrate before immersion in the alkaline treatment liquid,
the post-immersion treatment information is information on a physical quantity that indicates a treatment amount of the learning target substrate after it has been immersed in the alkaline treatment liquid and then removed from the alkaline treatment liquid,
the learning data further includes at least one of flow rate information indicating a flow rate of the gas, timing information indicating a timing of supplying the gas, and period information indicating a period of supplying the gas when the learning target substrate is immersed in the alkaline treatment liquid;
In the bubble adjustment step, input information is input to the trained model, and output information is obtained from the trained model;
the input information includes information on a physical quantity indicating a treatment amount of the substrate before immersion in the alkaline treatment liquid and information indicating a control target,
the control object includes at least one of a flow rate of the gas, a supply timing of the gas, and a supply period of the gas when the substrate is immersed in the alkaline treatment liquid,
the output information includes information indicating a result of clustering the input information,
In the bubble adjusting step, the control target is controlled based on the output information. the substrate processing apparatus further includes a plate disposed below the bubble supply pipe inside the processing tank;
5. The substrate processing method according to claim 1, further comprising a processing liquid introducing step of introducing the alkaline processing liquid into the processing tank upward from a plurality of processing liquid holes formed in the plate while the alkaline processing liquid is stored in the processing tank. The substrate processing method according to claim 1 , wherein the bubble supply pipe is hydrophilic. 7. The substrate processing method according to claim 6 , wherein the bubble supply pipe is made of quartz or polyether ether ketone. a treatment tank for storing an alkaline treatment liquid;
a substrate holder that holds a substrate and immerses the substrate in the alkaline processing solution stored in the processing tank;
a bubble supply pipe having a plurality of bubble holes and disposed inside the treatment tank, for supplying bubbles from each of the plurality of bubble holes to the alkaline treatment liquid from below the substrate while the substrate is immersed in the alkaline treatment liquid ,
a plurality of the bubble supply pipes are disposed inside the treatment tank;
a bubble adjusting unit that adjusts the bubbles for each of the bubble supply pipes;
a control unit,
the bubble adjusting unit supplies gas to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes;
the control unit controls the bubble adjusting unit to control a control target for adjusting the bubbles for each of the bubble supply pipes;
the control unit controls the control target for each bubble supply pipe based on a distribution of physical quantities indicating a processing amount of the substrate before the substrate is immersed in the alkaline processing solution, thereby adjusting the distribution of bubbles on the surface of the substrate . The substrate processing apparatus according to claim 8 , wherein the control target includes at least one of a flow rate of the gas, a supply timing of the gas, and a supply period of the gas. a treatment tank for storing an alkaline treatment liquid;
a substrate holder that holds a substrate and immerses the substrate in the alkaline processing solution stored in the processing tank;
a bubble supply pipe having a plurality of bubble holes and disposed inside the treatment tank, for supplying bubbles from each of the plurality of bubble holes to the alkaline treatment liquid from below the substrate while the substrate is immersed in the alkaline treatment liquid;
Equipped with
a plurality of the bubble supply pipes are disposed inside the treatment tank;
a bubble adjusting unit that adjusts the bubbles for each of the bubble supply pipes;
a memory unit that stores a trained model constructed by learning the training data; and
a control unit that controls the storage unit,
the bubble adjusting unit supplies gas to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes;
the learning data includes pre-immersion treatment information and post-immersion treatment information;
the pre-immersion treatment information is information on a physical quantity indicating the amount of treatment of the learning target substrate before immersion in the alkaline treatment liquid,
the post-immersion treatment information is information on a physical quantity that indicates a treatment amount of the learning target substrate after it has been immersed in the alkaline treatment liquid and then removed from the alkaline treatment liquid,
the learning data further includes at least one of flow rate information indicating a flow rate of the gas, timing information indicating a timing of supplying the gas, and period information indicating a period of supplying the gas when the learning target substrate is immersed in the alkaline treatment liquid;
The control unit inputs input information to the trained model and acquires output information from the trained model;
the input information includes information on a physical quantity that indicates a treatment amount of the substrate before immersion in the alkaline treatment liquid,
the output information includes information indicating a control target,
the control object includes at least one of a flow rate of the gas, a supply timing of the gas, and a supply period of the gas when the substrate is immersed in the alkaline treatment liquid,
The control unit adjusts the bubbles based on the output information. a treatment tank for storing an alkaline treatment liquid;
a substrate holder that holds a substrate and immerses the substrate in the alkaline processing solution stored in the processing tank;
a bubble supply pipe having a plurality of bubble holes and disposed inside the treatment tank, for supplying bubbles from each of the plurality of bubble holes to the alkaline treatment liquid from below the substrate while the substrate is immersed in the alkaline treatment liquid;
Equipped with
a plurality of the bubble supply pipes are disposed inside the treatment tank;
a bubble adjusting unit that adjusts the bubbles for each of the bubble supply pipes;
a memory unit that stores a trained model constructed by learning the training data; and
a control unit that controls the storage unit,
the bubble adjusting unit supplies gas to each of the bubble supply pipes, thereby supplying the bubbles to the alkaline processing liquid through the bubble holes;
the learning data includes pre-immersion treatment information and post-immersion treatment information;
the pre-immersion treatment information is information on a physical quantity indicating the amount of treatment of the learning target substrate before immersion in the alkaline treatment liquid,
the post-immersion treatment information is information on a physical quantity that indicates a treatment amount of the learning target substrate after it has been immersed in the alkaline treatment liquid and then removed from the alkaline treatment liquid,
the learning data further includes at least one of flow rate information indicating a flow rate of the gas, timing information indicating a timing of supplying the gas, and period information indicating a period of supplying the gas when the learning target substrate is immersed in the alkaline treatment liquid;
The control unit inputs input information to the trained model and acquires output information from the trained model;
the input information includes information on a physical quantity indicating a treatment amount of the substrate before immersion in the alkaline treatment liquid and information indicating a control target,
the control object includes at least one of a flow rate of the gas, a supply timing of the gas, and a supply period of the gas when the substrate is immersed in the alkaline treatment liquid,
the output information includes information indicating a result of clustering the input information,
The control unit controls the control target based on the output information. a treatment tank for storing an alkaline treatment liquid;
a substrate holder that holds a substrate and immerses the substrate in the alkaline processing solution stored in the processing tank;
a bubble supply pipe having a plurality of bubble holes and disposed inside the treatment tank, for supplying bubbles from each of the plurality of bubble holes to the alkaline treatment liquid from below the substrate while the substrate is immersed in the alkaline treatment liquid;
Equipped with
the substrate holder holds a plurality of the substrates at intervals in a predetermined direction;
the bubble supply pipe extends along the predetermined direction,
In the bubble supply pipe, the plurality of bubble holes are arranged at intervals in the predetermined direction,
a plurality of interstitial spaces are present in the array of the plurality of substrates;
each of the plurality of gap spaces indicates a gap space between the substrates adjacent to each other in the predetermined direction,
The plurality of bubble holes are
a first bubble hole that is disposed outward in the predetermined direction from a substrate that is disposed at one end in the predetermined direction among the plurality of substrates;
a second bubble hole that is disposed outward in the predetermined direction from a substrate that is disposed at the other end of the plurality of substrates in the predetermined direction;
a plurality of third bubble holes respectively arranged corresponding to the plurality of gap spaces,
the number of the first air bubble holes is greater than the number of third air bubble holes arranged corresponding to one of the gap spaces among the plurality of third air bubble holes;
The substrate processing apparatus, wherein the number of the second bubble holes is greater than the number of the third bubble holes arranged corresponding to one gap space. a treatment liquid introduction section disposed below the bubble supply pipe inside the treatment tank,
the treatment liquid inlet includes a plate having a plurality of treatment liquid holes;
13. The substrate processing apparatus according to claim 8, wherein the processing liquid introduction section introduces the alkaline processing liquid into the processing tank upward from the plurality of processing liquid holes while the alkaline processing liquid is stored in the processing tank. The substrate processing apparatus according to claim 8 , wherein the bubble supply pipe is hydrophilic. The substrate processing apparatus according to claim 14 , wherein the bubble supply pipe is made of quartz or polyether ether ketone.