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JP7765199B2 - Current detection device and circuit part of the device - Google Patents
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JP7765199B2 - Current detection device and circuit part of the device - Google Patents

Current detection device and circuit part of the device

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JP7765199B2
JP7765199B2 JP2021085695A JP2021085695A JP7765199B2 JP 7765199 B2 JP7765199 B2 JP 7765199B2 JP 2021085695 A JP2021085695 A JP 2021085695A JP 2021085695 A JP2021085695 A JP 2021085695A JP 7765199 B2 JP7765199 B2 JP 7765199B2
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彰宏 三甲野
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Kohshin Electric Corp
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Description

本発明は、磁気検出素子を用いた電流検出装置に関する。The present invention relates to a current detection device using a magnetic detection element.

従来のモータ駆動用インバータなどに使用される電流検出装置は、三相での電流測定が一般的であり、電流測定対象となる電流路を挟み込むように二つ以上の磁気検出素子を配置し、検出信号を差動演算することで近隣電流路及び、周囲の磁場の影響をキャンセルし、被測定電流を正確に測定することは知られている。Conventional current detection devices used in motor drive inverters and the like generally measure three-phase currents, and it is known that two or more magnetic detection elements are arranged to sandwich the current path to be measured, and the influence of nearby current paths and surrounding magnetic fields is canceled out by differentially calculating the detection signals, thereby accurately measuring the current to be measured.

例えば、特許文献1には、電流測定の対象とする1本の長板状の電流路に穿設されたスリットに対し、対称になるように分流された2系統の被測定電流路に、2系統の被測定電流が流れることで発生する磁束密度を、スリット挟んで板厚方向に対称に配置された2個一対の磁気検出素子により検出し、検出信号を差動演算することで、周囲の磁場の影響をキャンセルし、被測定電流の大きさを正確に測定している。For example, in Patent Document 1, a slit is drilled in a long, plate-shaped current path to be measured, and two currents to be measured flow into two current paths that are divided symmetrically around the slit. The magnetic flux density generated by these two currents is detected by a pair of magnetic detection elements arranged symmetrically in the plate thickness direction across the slit, and the detection signals are differentially calculated to cancel the effects of the surrounding magnetic field and accurately measure the magnitude of the current to be measured.

また、特許文献2では、互いに隣り合う複数のクランク上に加工した電流路のうち、少なくとも1つ電流路の両側を挟み込むように2個一対の磁気検出素子が、各磁気検出素子に等しく磁束密度が加わる位置に配置され、各磁気検出素子で得られた検出信号を差動演算している。近隣電流路からの影響受けるが、クランク形状を追加することにより、被測定電流路にある2個一対の磁気検出素子が同じ値の磁束密度を検出するため、差動演算することで、近隣電流路からの影響をキャンセルし、被測定電流の大きさを正確に測定している。In addition, in Patent Document 2, a pair of magnetic detection elements is placed on both sides of at least one of a plurality of adjacent crank-shaped current paths, with each pair of magnetic detection elements positioned so that the magnetic flux density is equally applied to each magnetic detection element, and a differential calculation is performed on the detection signals obtained by each magnetic detection element.Although there is an influence from nearby current paths, the addition of the crank shape causes the two pair of magnetic detection elements on the current path to be measured to detect the same magnetic flux density, so that the influence from nearby current paths is canceled out by the differential calculation, and the magnitude of the current to be measured is accurately measured.

特許6144597Patent 6144597 特許4839393Patent 4839393 特開2005-283451 図3JP 2005-283451 Figure 3

図23に特許文献1図2に開示されている構成を示す。長板状(延伸する方向をY方向とする)の電路90のスリット93が設けられた部分では、電路90を流れる電流がスリット93により2分割されることで同一方向に二つの電流経路91、92に分かれて存在している。電流経路91、92及びスリット93の幅方向(X方向)の長さを符号a、b、c、電路の板厚(厚さ方向をZ方向とする)を符号d、二つの磁気検出素子94、95のZ方向の距離を符号e、二つの磁気検出素子94、95を結ぶ線を軸L1、電路90の板厚の中心線を軸L2としている。磁気検出素子94、95は軸L2に対し線対称に配置されており、電路90は軸L1、L2ともに線対称となるように配置されている。二つの磁気検出素子94、95はX方向が感度軸となり、電路90に-Y方向から+Y方向へ電流を通電したとき、電流経路91、92に発生するそれぞれの磁束線96、97の互いに反対方向となるX方向の磁束密度98、99を検出している。Figure 23 shows the configuration disclosed in Figure 2 of Patent Document 1. In a portion of a long, plate-shaped electric circuit 90 (extending in the Y direction) where a slit 93 is provided, the current flowing through the electric circuit 90 is divided into two by the slit 93, resulting in two current paths 91 and 92 in the same direction. The lengths of the current paths 91 and 92 and the slit 93 in the width direction (X direction) are indicated by symbols a, b, and c, the plate thickness of the electric circuit (thickness direction is the Z direction) is indicated by symbol d, the distance in the Z direction between two magnetic detection elements 94 and 95 is indicated by symbol e, the line connecting the two magnetic detection elements 94 and 95 is indicated by axis L1, and the center line of the plate thickness of the electric circuit 90 is indicated by axis L2. The magnetic detection elements 94 and 95 are arranged symmetrically with respect to axis L2, and the electric circuit 90 is arranged so as to be symmetrical with respect to both axes L1 and L2. The two magnetic detection elements 94 and 95 have a sensitivity axis in the X direction, and when a current is passed through the current circuit 90 from the -Y direction to the +Y direction, they detect magnetic flux densities 98 and 99 in the X direction, which are opposite to each other, of magnetic flux lines 96 and 97 generated in the current paths 91 and 92, respectively.

図24には、シミュレーションにより、図23に示す符号a=4mm、b=2mm、c=4mm、d=0.8mm、e=2.5mmとし、100Aの交流電流を通電したときの発生する磁束線からX方向のみを抽出したもの磁束分布を示す。図24(a)が60Hzの交流電流を通電した場合、図24(b)が10kHzの交流電流を通電した場合を示す。図24(a)に示すように60Hzの場合、磁気検出素子94が検出するX方向の磁束密度は3.22mT、磁気検出素子95では-3.22mTとなり、差動演算すると6.44mTとなる。一方図24(b)に示すように、10kHzでは、磁気検出素子94が検出するX方向の磁束密度は2.90mT、磁気検出素子95では-2.90mTとなり、差動演算すると5.80mTとなる。60Hzと10kHzを比較すると、約-10.0%の差異が発生しており、高周波まで精度よく測定することが従来は難しかった。FIG. 24 shows a simulation of magnetic flux distribution, extracted only from the X-direction magnetic flux lines generated when a 100 A AC current is passed through a magnetic field measuring a distance a = 4 mm, b = 2 mm, c = 4 mm, d = 0.8 mm, and e = 2.5 mm as shown in FIG. 23 . FIG. 24(a) shows the case where a 60 Hz AC current is passed through, and FIG. 24(b) shows the case where a 10 kHz AC current is passed through. As shown in FIG. 24(a), at 60 Hz, the magnetic flux density in the X-direction detected by magnetic detection element 94 is 3.22 mT, and that detected by magnetic detection element 95 is −3.22 mT, resulting in a differential calculation of 6.44 mT. On the other hand, as shown in FIG. 24(b), at 10 kHz, the magnetic flux density in the X-direction detected by magnetic detection element 94 is 2.90 mT, and that detected by magnetic detection element 95 is −2.90 mT, resulting in a differential calculation of 5.80 mT. When comparing 60 Hz and 10 kHz, a difference of approximately -10.0% occurs, and it has traditionally been difficult to measure high frequencies with high accuracy.

また特許文献2の構成では、クランク形状に加工した電路(導体)を並べて配置(並んでいる方向をX方向とする)しているため、各導体間のX方向の距離が広がり、かつ、被測定電流路に配置された二つの磁気検出素子に、近隣電流路に電流を流したときに発生する磁束密度を等しく加わるように配置するため、各導体をその延伸方向(Y方向)にずらして配置するため、XY平面の体格が大きくなるため小型化することが従来は難しかった。Furthermore, in the configuration of Patent Document 2, the electric circuits (conductors) processed into a crank shape are arranged side by side (the direction in which they are arranged is the X direction), which increases the distance between each conductor in the X direction. In addition, in order to arrange the two magnetic detection elements arranged in the current path to be measured so that the magnetic flux density generated when current flows in the neighboring current path is equally applied, each conductor is arranged offset in its extension direction (Y direction). This increases the size in the XY plane, making it difficult to reduce the size in the past.

本発明は、上記課題を鑑みてなされたものであり、測定対象の電流によって発生する磁束に対して、高周波数帯まで精度よく測定でき、近隣電流路及び、周囲の磁場の影響(外部磁界の影響)を抑制しつつ、電流検出装置を小型化することを目的とする。The present invention has been made in consideration of the above-mentioned problems, and aims to miniaturize a current detection device that can accurately measure the magnetic flux generated by the current being measured up to high frequency bands, while suppressing the influence of nearby current paths and surrounding magnetic fields (influence of external magnetic fields).

本発明における電流検出装置においては、被測定電流が流れる方向に延伸し、延伸方向の垂直な方向から貫通スリットが穿設され、貫通スリットにより電流経路が2分割された平板状の電路と、被測定電流によって電路の周囲に発生する磁束をそれぞれ検出する一対の磁気検出素子を備え、2分割された電流経路は、延伸方向に垂直な断面から見て、一対の磁気検出素子を結ぶ軸に対し、非線対称な形状を有し、電路に流れる被測定電流は、貫通スリットにより、2分割された電流経路に同一方向に分流して流れ、一対の磁気検出素子は、2分割された電流経路に流れる電流より発生した磁界を互いに反対方向に貫通するように感磁面がそれぞれ配置され、かつ、電路の延伸方向の垂直な方向から見て、貫通スリット投影面内に配置され、一対の磁気検出素子から得られた検出信号を差動演算する回路部を備えたものである。The current detection device of the present invention comprises a flat electric circuit extending in the direction in which the current to be measured flows, with a through slit drilled in a direction perpendicular to the extension direction, the current path being divided into two by the through slit, and a pair of magnetic detection elements which each detect the magnetic flux generated around the electric circuit by the current to be measured, wherein the divided current paths have an asymmetrical shape with respect to the axis connecting the pair of magnetic detection elements when viewed from a cross section perpendicular to the extension direction, and the current to be measured flowing in the electric circuit is divided by the through slit into the two divided current paths and flows in the same direction, the pair of magnetic detection elements each have a magnetically sensitive surface arranged so that they penetrate in opposite directions through the magnetic field generated by the current flowing in the two divided current paths, and are arranged within the projection plane of the through slit when viewed from a direction perpendicular to the extension direction of the electric circuit, and comprises a circuit section which performs differential calculations on the detection signals obtained from the pair of magnetic detection elements.

本発明によれば、一対の磁気検出素子を結ぶ軸に対し、二つの電流経路が非線対称配置されることにより、外部磁界の影響を抑制しつつ、周波数特性が高周波領域まで良好な電流検出装置を提供できる。According to the present invention, by arranging two current paths asymmetrically with respect to the axis connecting the pair of magnetic detection elements, it is possible to provide a current detection device that suppresses the influence of external magnetic fields and has good frequency characteristics up to the high frequency range.

本発明の実施の形態1に係る電流検出装置の斜視図である。1 is a perspective view of a current detection device according to a first embodiment of the present invention; 本発明の実施の形態1に係る電流検出装置の回路部の回路ブロック図である。1 is a circuit block diagram of a circuit section of a current detection device according to a first embodiment of the present invention; 図1の断面図である。FIG. 2 is a cross-sectional view of FIG. 1. 図3における磁束分布図である。FIG. 4 is a magnetic flux distribution diagram in FIG. 3. 本発明の実施の形態1に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。4 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the first embodiment of the present invention. 本発明の実施の形態1に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。4 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the first embodiment of the present invention. 本発明の実施の形態1に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。4 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the first embodiment of the present invention. 本発明の実施の形態1に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。4 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the first embodiment of the present invention. 本発明の実施の形態1に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。4 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the first embodiment of the present invention. 本発明の実施の形態1に係る電流検出装置の断面図である。1 is a cross-sectional view of a current detection device according to a first embodiment of the present invention. 本発明の実施の形態1に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。4 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the first embodiment of the present invention. 本発明の実施の形態2に係る電流検出装置の斜視図である。FIG. 10 is a perspective view of a current detection device according to a second embodiment of the present invention. 図12の断面図である。FIG. 13 is a cross-sectional view of FIG. 12. 本発明の実施の形態2に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。10 is a table and a graph showing frequency characteristics of magnetic flux density in the current detection device according to the second embodiment of the present invention. 本発明の実施の形態3に係る電流検出装置の斜視図である。FIG. 10 is a perspective view of a current detection device according to a third embodiment of the present invention. 図15の断面図である。FIG. 16 is a cross-sectional view of FIG. 15. 本発明の実施の形態3に係る電流検出装置における、磁束密度の周波数特性の表とグラフである。10 is a table and a graph showing frequency characteristics of magnetic flux density in a current detection device according to a third embodiment of the present invention. 本発明の実施の形態4に係る電流検出装置の斜視図である。FIG. 10 is a perspective view of a current detection device according to a fourth embodiment of the present invention. 図18の断面図である。FIG. 19 is a cross-sectional view of FIG. 18. 図19における磁束分布図である。FIG. 20 is a magnetic flux distribution diagram in FIG. 19. 図18の電路を変形させた斜視図である。FIG. 20 is a perspective view showing a modified version of the electrical path shown in FIG. 18; 図21の側面図である。FIG. 22 is a side view of FIG. 21. 従来例の電路と回路部を示す断面図である。FIG. 10 is a cross-sectional view showing an electric path and a circuit portion of a conventional example. 従来例における磁束分布図である。FIG. 10 is a magnetic flux distribution diagram in a conventional example.

実施の形態1.
図1(a)は、本発明の実施の形態1に係る電流検出装置100の外観を示す斜視図であり、図1(b)は、電路1の電流経路5、6、スリット7、回路部8の関係を示す図である。X方向を電路1の幅方向、Z方向を電路1の厚み方向、Y方向を電路1が延伸する方向とする。以降実施の形態1については、各方向を同様に定義する。
Embodiment 1.
1(a) is a perspective view showing the appearance of a current detection device 100 according to a first embodiment of the present invention, and FIG. 1(b) is a diagram showing the relationship between current paths 5 and 6, a slit 7, and a circuit section 8 of an electric circuit 1. The X direction is the width direction of the electric circuit 1, the Z direction is the thickness direction of the electric circuit 1, and the Y direction is the direction in which the electric circuit 1 extends. Hereinafter, in the first embodiment, each direction will be defined similarly.

電流検出装置100は、例えば銅材もしくはアルミ材からなる電路1が固定された絶縁材料(例えば、PPS:ポリフェニレンサルファイド、PA:ポリアミド、PBT:ポリブチレンテレフタレートなど)からなるケース部2に、回路部8及びコネクタ部4及び抵抗やコンデンサ(図示せず)などが半田付けにより搭載されたプリント基板3がネジ(図示せず)などにより固定されている。Y方向に延伸した長板状の電路1に、延伸方向(Y方向)に垂直な方向(Z方向)から貫通したスリット7が穿設され、スリット7に沿って、Y方向と平行な向きかつ、電路1をZ方向に貫通するように回路部8が配置されている。The current detection device 100 has a case 2 made of an insulating material (e.g., PPS: polyphenylene sulfide, PA: polyamide, PBT: polybutylene terephthalate, etc.) to which an electric circuit 1 made of, for example, copper or aluminum is fixed, and a printed circuit board 3 on which a circuit section 8, a connector section 4, and resistors and capacitors (not shown) are mounted by soldering is fixed with screws (not shown) or the like. A slit 7 is formed in the long plate-like electric circuit 1 extending in the Y direction, penetrating the electric circuit 1 from a direction (Z direction) perpendicular to the extension direction (Y direction), and the circuit section 8 is arranged along the slit 7 in a direction parallel to the Y direction and penetrating the electric circuit 1 in the Z direction.

このとき、電路1のスリット7が設けられた部分では、電路1を流れる電流がスリット7により2分割されることで同一方向に二つの電流経路5、6が存在している。電路1は片端がIPM(インテリジェントパワーモジュール)などのモータなどを駆動する半導体の出力端に接続され、他の片端は例えばモータの入力端に接続されており、被測定電流となるモータ駆動電流が流れる。At this time, in the portion of the electric circuit 1 where the slit 7 is provided, the current flowing through the electric circuit 1 is divided into two by the slit 7, resulting in the existence of two current paths 5 and 6 in the same direction. One end of the electric circuit 1 is connected to the output terminal of a semiconductor that drives a motor such as an IPM (intelligent power module), and the other end is connected to the input terminal of a motor, for example, and a motor drive current, which is the current to be measured, flows through the electric circuit 1.

図2は、本発明の実施の形態1に係る電流検出装置100の回路部8の回路構成を示すブロック図である。図2において回路部8は、一対の磁気検出素子11、12、第一の増幅部13、第二の増幅部14、差動演算部15、電源端子16、17、出力端子18、基材19を有する。電流検出装置100は外部からコネクタ部4などのインターフェースを通し、プリント基板3を介して、回路部8の電源端子16、17間に例えば5Vが電源供給され、出力端子18からは差動演算部の出力信号が外部に出力される。2 is a block diagram showing the circuit configuration of circuit unit 8 of current detection device 100 according to embodiment 1 of the present invention. In Fig. 2, circuit unit 8 includes a pair of magnetic detection elements 11, 12, a first amplifier unit 13, a second amplifier unit 14, a differential calculation unit 15, power supply terminals 16, 17, an output terminal 18, and a substrate 19. Current detection device 100 receives power of, for example, 5 V from the outside through an interface such as connector unit 4 and via printed circuit board 3 between power supply terminals 16, 17 of circuit unit 8, and an output signal from the differential calculation unit is output to the outside from output terminal 18.

磁気検出素子11、12は、例えばホール素子、MR素子、GMR素子、又はTMR素子等を用いて構成される。MR素子とは、磁気抵抗効果(Magneto Resistive Effect)を利用して磁束を検出する素子である。GMR素子とは、巨大磁気抵抗効果(Giant Magneto Resistive Effect)を利用して磁束を検出する素子である。TMR素子とは、トンネル磁気抵抗効果(Tunnel Magneto Resistance Effect)を利用して磁束を検出する素子である。これ以外にも、磁束を検出してその検出結果に応じた検出信号を出力できるものであれば、任意の素子を磁気検出素子11、12として用いることが可能である。The magnetic detection elements 11 and 12 are configured using, for example, a Hall element, an MR element, a GMR element, or a TMR element. An MR element is an element that detects magnetic flux using the magnetoresistive effect. A GMR element is an element that detects magnetic flux using the giant magnetoresistive effect. A TMR element is an element that detects magnetic flux using the tunnel magnetoresistive effect. In addition to these, any element can be used as the magnetic detection elements 11 and 12 as long as it can detect magnetic flux and output a detection signal according to the detection result.

第一の増幅部13と第二の増幅部14は、磁気検出素子11、12からそれぞれ出力される微小な電圧信号を増幅し、差動演算部15へ出力する。差動演算部15は、第一の増幅部13と第二の増幅部14からそれぞれ出力された電圧信号の差分を求める差動演算を行い、その演算結果を出力端子18へ出力する。The first amplifier 13 and the second amplifier 14 amplify the minute voltage signals output from the magnetic detection elements 11 and 12, respectively, and output the amplified signals to the differential calculation unit 15. The differential calculation unit 15 performs a differential calculation to determine the difference between the voltage signals output from the first amplifier 13 and the second amplifier 14, respectively, and outputs the calculation result to an output terminal 18.

基材19は、例えばシリコン基板やガラスエポキシ基板等を用いて構成され、上述した回路部8の各構成部品を所定の配置でそれぞれ固定するとともに、各構成部品同士を電気的に接続する。基材19に各構成部品が搭載された回路部8は、樹脂によるモールドパッケージ等が施された後、ケース部2に固定された電路1、同様にケース部2に固定され回路部8が搭載されたプリント基板3を介し、それぞれ配置及び固定することができる。そのさい、一対の磁気検出素子11、12は、電路1に対して、相互に対抗する方向に感度を有するような向きでそれぞれ配置される。これらの磁気検出素子は電路1に流れる被測定電流によって発生する磁束を検出し、磁束の検出結果に応じた検出信号を第一の増幅部13と第二の増幅部14へそれぞれ出力する。The substrate 19 is formed using, for example, a silicon substrate or a glass epoxy substrate, and fixes each component of the circuit unit 8 in a predetermined arrangement and electrically connects each component to each other. The circuit unit 8, on which each component is mounted, can be arranged and fixed via the electric circuit 1 fixed to the case unit 2 and the printed circuit board 3, which is also fixed to the case unit 2 and on which the circuit unit 8 is mounted, after being molded with resin or the like. In this case, the pair of magnetic detection elements 11, 12 are each oriented with respect to the electric circuit 1 so that they are sensitive in opposing directions. These magnetic detection elements detect magnetic flux generated by the current to be measured flowing through the electric circuit 1 and output detection signals corresponding to the magnetic flux detection results to the first amplifier unit 13 and the second amplifier unit 14, respectively.

図3は、図1(b)に示す電流経路5、6に直交する断面9を矢印10から見た断面図である。電流経路5と電流経路6及びスリット7のX方向の長さを符号a、b、c、電路1の板厚を符号d、回路部8内の二つの磁気検出素子11、12のZ方向の距離を符号e、二つの磁気検出素子11、12を結ぶ線を軸L1、電路1の板厚の中心線を軸L2としている。磁気検出素子11、12は軸L2に対し線対称に配置されており、電路1は軸L2対し線対称となるように配置されているが、軸L1に対しては、非線対称となるように配置されている。例えば符号a=2mm、b=2mm、c=6mm、d=0.8mm、e=2.5mmである。二つの磁気検出素子11、12は、X方向が感度軸となり、電路1に-Y方向から+Y方向へ電流を通電したとき、電流経路5、6に発生するそれぞれの磁束線20、21の互いに反対方向となるX方向の磁束密度22、23を検出している。3 is a cross-sectional view of a cross section 9 perpendicular to the current paths 5 and 6 shown in FIG. 1B, as viewed from the arrow 10. The lengths of the current paths 5 and 6 and the slit 7 in the X direction are designated by symbols a, b, and c. The thickness of the electric circuit 1 is designated by symbol d. The distance in the Z direction between the two magnetic detection elements 11 and 12 in the circuit unit 8 is designated by symbol e. The line connecting the two magnetic detection elements 11 and 12 is designated by axis L1. The center line of the thickness of the electric circuit 1 is designated by axis L2. The magnetic detection elements 11 and 12 are arranged symmetrically with respect to axis L2. The electric circuit 1 is arranged symmetrically with respect to axis L2 but asymmetrically with respect to axis L1. For example, symbols a = 2 mm, b = 2 mm, c = 6 mm, d = 0.8 mm, and e = 2.5 mm. The two magnetic detection elements 11 and 12 have a sensitivity axis in the X direction, and when a current is passed through the current circuit 1 from the -Y direction to the +Y direction, they detect magnetic flux densities 22 and 23 in the X direction, which are opposite to each other in the magnetic flux lines 20 and 21 generated in the current paths 5 and 6, respectively.

また、回路部8の端子16、17、18は、特許文献3(特開2005-283451の図3)の磁気検出部と同様に片側方向に突出している。その突出方向は、軸L1と並行なZ方向である。Terminals 16, 17, and 18 of circuit unit 8 protrude to one side, similar to the magnetic detection unit of Patent Document 3 (FIG. 3 of JP-A-2005-283451), in the Z direction parallel to axis L1.

このように構成された電流検出装置100においては、電路1の電流経路5、6で2分割された被測定電流により生じる磁束線20、21のX方向の磁束密度を、回路部8内の磁気検出素子11、12で検出し、両者の差分を求めることで被測定電流を測定している。ここでは、電流経路5、6を軸L1に対して非線対称配置とした場合の被測定電流測定の高周波特性をシミュレーションにより確認する。In the current detection device 100 configured in this manner, the magnetic flux densities in the X direction of the magnetic flux lines 20 and 21 generated by the current to be measured, which is split into two by the current paths 5 and 6 of the electrical circuit 1, are detected by the magnetic detection elements 11 and 12 in the circuit unit 8, and the current to be measured is measured by finding the difference between the two. Here, the high-frequency characteristics of the current to be measured when the current paths 5 and 6 are arranged asymmetrically with respect to the axis L1 are confirmed by simulation.

図4には、シミュレーションにより、図3に示す符号a=2mm、b=2mm、c=6mm、d=0.8mm、e=2.5mmとし、100Aの交流電流を通電したときに発生する磁束線からX方向のみを抽出した磁束分布を示す。また、図24と図4では、符号aを4mmから2mm、符号cを4mmから6mmに変化させ、軸L1に対し、電路1の電流経路5と電流経路6が非線対称となるように配置している。Fig. 4 shows a magnetic flux distribution obtained by simulation, in which only the X direction is extracted from the magnetic flux lines generated when an AC current of 100 A is passed through the magnetic flux lines with the distances a = 2 mm, b = 2 mm, c = 6 mm, d = 0.8 mm, and e = 2.5 mm shown in Fig. 3. In Figs. 24 and 4, the distance a is changed from 4 mm to 2 mm, and the distance c is changed from 4 mm to 6 mm, and current paths 5 and 6 of electric circuit 1 are arranged asymmetrically with respect to axis L1.

図4(a)が60Hzの交流電流を通電した場合、図4(b)が10kHzの交流電流を通電した場合を示す。図4(a)に示すように60Hzの場合、磁気検出素子11が検出するX方向の磁束密度は3.06mT、磁気検出素子12では-3.07mTとなり、差動演算すると6.13mTとなる。一方図4(b)に示すように、10kHzでは、磁気検出素子11が検出するX方向の磁束密度は3.15mT、磁気検出素子12では-3.14mTとなり、差動演算すると6.29mTとなる。60Hzと10kHzを比較しても、約2.7%の差異しかなく、電流経路5、6を軸L1に対して非線対称配置とすることで高周波まで精度よく電流測定することができる。Figure 4(a) shows the results when a 60 Hz AC current is passed through, and Figure 4(b) shows the results when a 10 kHz AC current is passed through. As shown in Figure 4(a), at 60 Hz, the magnetic flux density in the X direction detected by magnetic detection element 11 is 3.06 mT, and that detected by magnetic detection element 12 is -3.07 mT, resulting in a differential calculation of 6.13 mT. On the other hand, as shown in Figure 4(b), at 10 kHz, the magnetic flux density in the X direction detected by magnetic detection element 11 is 3.15 mT, and that detected by magnetic detection element 12 is -3.14 mT, resulting in a differential calculation of 6.29 mT. Comparing 60 Hz and 10 kHz, there is only a difference of approximately 2.7%, and by arranging current paths 5 and 6 asymmetrically with respect to axis L1, accurate current measurement is possible up to high frequencies.

ここではスリット7のX方向の位置を変え、非線対称配置状態が変わった場合の被測定電流測定の高周波特性をシミュレーションにより確認する。
図5は本発明の実施の形態1に係る電流検出装置100において、図3に示す符号a+b+cを10mm、かつ、符号bを2mm固定し、符号a、cを1mmずつ変動させ、電路1に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図5(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図5(b))である。
Here, the position of the slit 7 in the X direction is changed, and the high frequency characteristics of the current to be measured when the non-axially symmetrical arrangement state is changed are confirmed by simulation.
5A and 5B show a table (FIG. 5A) of the frequency characteristics of the magnetic flux density obtained by detecting the magnetic flux density in the X direction using two magnetic detection elements 11 and 12 and performing differential calculations when a 100 A AC current (60 Hz to 100 kHz) is applied to the current detection device 100 according to the first embodiment of the present invention, with the symbols a+b+c shown in FIG. 3 fixed at 10 mm and symbol b fixed at 2 mm, and symbols a and c varied by 1 mm each. FIG. 5B also shows a table and graph (FIG. 5B) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz.

ここでパターンA1はa=4mm、c=4mmとcとaの比が1、A2はa=3mm、c=5mmとcとaの比が1.7、A3はa=2mm、c=6mmとcとaの比が3、A4はa=1mm、c=7mmとcとaの比が7であり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。一般的にモータ駆動用のインバータなどでは、スイッチング周波数を1kHz~20kHzの範囲に設定することが多いため、10kHzで比較すると、図5(b)に示すように、パターンA1では-10%、A2では-7.0%、A3では2.7%、A4では21.5%となり、パターンA1よりも、パターンA2、パタ-ンA3の方が高周波まで精度よく測定できることがわかる。また、パターンA4では、パターンA1よりも高周波の精度が悪くなる。Here, for pattern A1, a = 4 mm, c = 4 mm, and the ratio of c to a was 1; for A2, a = 3 mm, c = 5 mm, and the ratio of c to a was 1.7; for A3, a = 2 mm, c = 6 mm, and the ratio of c to a was 3; and for A4, a = 1 mm, c = 7 mm, and the ratio of c to a was 7. Simulations were performed for eight AC frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz. Generally, motor drive inverters and the like often have switching frequencies set in the range of 1 kHz to 20 kHz. A comparison at 10 kHz yielded results of -10% for pattern A1, -7.0% for A2, 2.7% for A3, and 21.5% for A4, as shown in Figure 5(b). This indicates that patterns A2 and A3 can measure frequencies up to higher frequencies more accurately than pattern A1. Furthermore, pattern A4 has poorer accuracy at high frequencies than pattern A1.

以上の結果より、軸L1に対し、電流経路5と電流経路6が線対称に配置されたパターンA1よりも、図3で示す軸L1に対し、電流経路5と電流経路6が非線対称に配置されたパターンA2、A3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。From the above results, it can be seen that patterns A2 and A3 (the ratio of c to a is 1.7 to 3) in which current path 5 and current path 6 are arranged non-axially symmetrically with respect to axis L1 shown in FIG. 3 can provide more accurate measurements up to high frequencies than pattern A1 in which current path 5 and current path 6 are arranged axially symmetrically with respect to axis L1.

以降、多様な電路に対応するため、符号a、b、c、d、eの値を変えて、被測定電流測定の高周波特性をシミュレーションにより確認する。
図6では、本発明の実施の形態1に係る電流検出装置100において、大電流に対応すべく、電流経路5、6から磁気検出素子11、12が受ける熱の影響を避けることを目的に、スリット7のX方向の長さ符号bの距離を2mmから4mmに拡大し符号a+b+cを12mmとし、符号a、cを1mmずつ変動させ、電路1に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図6(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図6(b))である。
Thereafter, in order to accommodate various electric circuits, the values of the symbols a, b, c, d, and e are changed and the high-frequency characteristics of the current to be measured are confirmed by simulation.
6A and 6B show a table (FIG. 6A) of the frequency characteristics of the magnetic flux density obtained when a 100 A AC current (60 Hz to 100 kHz) is passed through the current detection device 100 according to the first embodiment of the present invention. The table (FIG. 6A) shows the frequency characteristics of the magnetic flux density. The table (FIG. 6B) also shows a table and a graph (FIG. 6B) show the frequency characteristics of the magnetic flux density fluctuation rate with respect to 60 Hz.

ここでパターンB1はa=4mm、c=4mm、B2はa=3mm、c=5mm、B3はa=2mm、c=6mm、B4はa=1mm、c=7mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。Here, for pattern B1, a = 4 mm, c = 4 mm, for B2, a = 3 mm, c = 5 mm, for B3, a = 2 mm, c = 6 mm, and for B4, a = 1 mm, c = 7 mm, and the alternating current frequencies were calculated by simulation at eight frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz.

上述の通り10kHzで比較すると、図6(b)に示すように、パターンB1では-5.7%、B2では-3.3%、B3では4.6%、B4では20.4%となり、パターンB1よりも、パターンB2、パタ-ンB3の方が高周波まで精度よく測定できることがわかる。また、パターンB4では、パターンB1よりも高周波の精度が悪くなる。As shown in Figure 6(b), when comparing at 10 kHz as described above, the results are -5.7% for pattern B1, -3.3% for B2, 4.6% for B3, and 20.4% for B4, which shows that patterns B2 and B3 can measure more accurately up to high frequencies than pattern B1. Also, pattern B4 has worse accuracy at high frequencies than pattern B1.

この場合、検出できる磁束密度が図5と比較して小さくなっているが、軸L1に対し、電流経路5と電流経路6が線対称に配置されたパターンB1よりも、図3で示す軸L1に対し、電流経路5と電流経路6が非線対称に配置されたパターンB2、パターンB3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。In this case, the detectable magnetic flux density is smaller compared to that in Figure 5, but patterns B2 and B3 (the ratio of c to a is 1.7 to 3), in which current paths 5 and 6 are arranged non-axially symmetrically with respect to axis L1 shown in Figure 3, can measure more accurately up to high frequencies than pattern B1, in which current paths 5 and 6 are arranged axially symmetrically with respect to axis L1.

図7では、本発明の実施の形態1に係る電流検出装置100において、図6よりもさらに大電流に対応することを目的に、電流経路5と電流経路6及びスリット7のX方向の長さ符号a、b、cを図5から2倍(符号a+b+cを20mm、かつ、符号bを4mm固定)とし、符号a、cを2mmずつ変動させ、電路1に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図7(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図7(b))である。7 shows the current detection device 100 according to the first embodiment of the present invention, with the aim of accommodating even larger currents than that shown in FIG. 6 , by doubling the lengths a, b, and c of the current paths 5 and 6 and the slit 7 in the X direction from those shown in FIG. 5 (the length a, b, and c are set to 20 mm, and the length b is fixed at 4 mm), and varying the lengths a and c by 2 mm each. The magnetic flux density in the X direction generated when a 100 A AC current (60 Hz to 100 kHz) is passed through the current path 1 is detected by the two magnetic detection elements 11 and 12, and differential calculation is performed. This table shows the frequency characteristics of the magnetic flux density ( FIG. 7( a)), and a table and graph ( FIG. 7( b)) of the frequency characteristics of the magnetic flux density fluctuation rate with respect to 60 Hz are also shown.

ここでパターンC1はa=8mm、c=8mm、C2はa=6mm、c=10mm、C3はa=4mm、c=12mm、C4はa=2mm、c=14mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。Here, for pattern C1, a = 8 mm, c = 8 mm, for C2, a = 6 mm, c = 10 mm, for C3, a = 4 mm, c = 12 mm, and for C4, a = 2 mm, c = 14 mm, and the alternating current frequencies were calculated by simulation at eight frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz.

上述の通り10kHzで比較すると、図7(b)に示すように、パターンC1では-10.1%、C2では-7.8%、C3では0.8%、C4では23.0%となり、パターンC1よりも、パターンC2、パタ-ンC3の方が高周波まで精度よく測定できることがわかる。また、パターンC4では、パターンC1よりも高周波の精度が悪くなる。As shown in Figure 7(b), when comparing at 10 kHz as described above, the results are -10.1% for pattern C1, -7.8% for C2, 0.8% for C3, and 23.0% for C4, which shows that patterns C2 and C3 can measure more accurately up to high frequencies than pattern C1. Furthermore, pattern C4 has worse accuracy at high frequencies than pattern C1.

この場合でも、検出できる磁束密度が図5と比較して小さくなっているが、軸L1に対し、電流経路5と電流経路6が線対称に配置されたパターンC1よりも、図3で示す軸L1に対し、電流経路5と電流経路6が非線対称に配置されたパターンC2、C3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。Even in this case, the detectable magnetic flux density is smaller compared to that in Figure 5, but patterns C2 and C3 (the ratio of c to a is 1.7 to 3) in which current paths 5 and 6 are arranged non-axially symmetrically with respect to axis L1 shown in Figure 3 can measure more accurately up to high frequencies than pattern C1 in which current paths 5 and 6 are arranged axially symmetrically with respect to axis L1.

図8では、本発明の実施の形態1に係る電流検出装置100において、図6、図7同様に大電流に対応することを目的に、符号a+b+cを10mm、かつ、符号bを2mm固定し、電路1の板厚dを0.8mmから2mmとし、符号a、cを1mmずつ変動させ、電路1に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図8(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図8(b))である。8 shows the current detection device 100 according to the first embodiment of the present invention, with the aim of being able to handle large currents as in FIGS. 6 and 7 , the symbol a+b+c is fixed at 10 mm, the symbol b is fixed at 2 mm, the plate thickness d of the electric circuit 1 is set to 0.8 mm to 2 mm, the symbols a and c are varied in increments of 1 mm, and an AC current of 100 A (60 Hz to 100 kHz) is passed through the electric circuit 1. The magnetic flux density in the X direction generated when this is detected by the two magnetic detection elements 11 and 12 is then differentially calculated. The results are shown in a table ( FIG. 8( a)) of the frequency characteristics of the magnetic flux density, and in a table and graph ( FIG. 8( b)) of the frequency characteristics of the magnetic flux density fluctuation rate with 60 Hz as the reference frequency.

ここでパターンD1はa=4mm、c=4mm、D2はa=3mm、c=5mm、D3はa=2mm、c=6mm、D4はa=1mm、c=7mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。Here, the pattern D1 had a = 4 mm, c = 4 mm, D2 had a = 3 mm, c = 5 mm, D3 had a = 2 mm, c = 6 mm, and D4 had a = 1 mm, c = 7 mm, and the alternating current frequencies were calculated by simulation at eight frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz.

上述の通り10kHzで比較すると、図8(b)に示すように、パターンD1では-15.6%、D2では-12.8%、D3では-1.7%、D4では23.2%となり、パターンD1よりも、パターンD2、パタ-ンD3の方が高周波まで精度よく測定できることがわかる。また、パターンD4では、パターンD1よりも高周波の精度が悪くなる。As shown in Figure 8(b), when comparing at 10 kHz as described above, the results are -15.6% for pattern D1, -12.8% for D2, -1.7% for D3, and 23.2% for D4, which shows that patterns D2 and D3 can measure more accurately up to high frequencies than pattern D1. Also, pattern D4 has worse accuracy at high frequencies than pattern D1.

この場合でも、検出できる磁束密度が図5と比較して小さくなっているが、図6、図7よりも大きな磁束密度を検出できるため、板幅を広げるよりも板厚dを厚くする方が磁束を確保しながら、発熱対策をすることができる。また、これまで同様軸L1に対し、電流経路5と電流経路6が線対称に配置されたパターンD1よりも、図3で示す軸L1に対し、電流経路5と電流経路6が非線対称に配置されたパターンD2、D3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。Even in this case, the detectable magnetic flux density is smaller compared to Figure 5, but a larger magnetic flux density can be detected than in Figures 6 and 7, so increasing the plate thickness d rather than widening the plate width allows for heat generation countermeasures while ensuring magnetic flux. Furthermore, patterns D2 and D3 (the ratio of c to a is 1.7 to 3) in which current paths 5 and 6 are arranged asymmetrically with respect to axis L1 shown in Figure 3 allow for more accurate measurements up to high frequencies than pattern D1 in which current paths 5 and 6 are arranged asymmetrically with respect to axis L1 as before.

図9では、本発明の実施の形態1に係る電流検出装置100において、図6~図8同様に大電流に対応することを目的に、符号a+b+cを10mm、かつ、符号bを2mm固定し、二つの磁気検出素子11、12のZ方向の距離eが電路1の板厚dが大きくなった場合を想定し、図5から符号eを2.5mmから1.5mmに、符号dを0.8mmから2.0mmに変更し、符号a、cを1mmずつ変動させた場合の電路1に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図9(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図9(b))である。9 shows a table ( FIG. 9( a) ) of the frequency characteristics of the magnetic flux density obtained by differential calculation in the current detection device 100 according to the first embodiment of the present invention, and a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz. The table shows a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz. The table shows a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz. The table shows a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz. The table shows a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz. The table shows a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz. The table shows a table and graph ( FIG. 9( b) ) of the frequency characteristics of the magnetic flux density fluctuation rate based on 60 Hz.

ここでパターンE1はa=4mm、c=4mm、E2はa=3mm、c=5mm、E3はa=2mm、c=6mm、E4はa=1mm、c=7mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。Here, pattern E1 has a = 4 mm, c = 4 mm, E2 has a = 3 mm, c = 5 mm, E3 has a = 2 mm, c = 6 mm, and E4 has a = 1 mm, c = 7 mm, and the simulation was carried out with eight AC frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz.

上述の通り10kHzで比較すると、図9(b)に示すように、パターンE1では-16.8%、E2では-14.0%、E3では-2.5%、E4では25.4%となり、パターンE1よりも、パターンE2、パタ-ンE3の方が高周波まで精度よく測定できることがわかる。また、パターンE4では、パターンE1よりも高周波の精度が悪くなる。As shown in Figure 9(b), when comparing at 10 kHz as described above, the results are -16.8% for pattern E1, -14.0% for E2, -2.5% for E3, and 25.4% for E4, which shows that patterns E2 and E3 can measure more accurately up to high frequencies than pattern E1. Also, pattern E4 has worse accuracy at high frequencies than pattern E1.

この場合でも、図6、図7同様検出できる磁束密度が図5と比較して小さくなっているが、軸L1に対し、電流経路5と電流経路6が線対称に配置されたパターンE1よりも、図3で示す軸L1に対し、電流経路5と電流経路6が非線対称に配置されたパターンE2、E3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。Even in this case, as in Figures 6 and 7, the detectable magnetic flux density is smaller than that in Figure 5, but patterns E2 and E3 (the ratio of c to a is 1.7 to 3) in which current paths 5 and 6 are arranged non-axisymmetrically with respect to axis L1 shown in Figure 3 can measure with higher accuracy up to high frequencies than pattern E1 in which current paths 5 and 6 are arranged axisymmetrically with respect to axis L1.

ここでは、組立誤差や構造要件などにより、二つの磁気検出素子11、12の位置が軸L2に対して線対称に配置できない場合について確認する。
図10では、本発明の実施の形態1に係る電流検出装置100において、図5から二つの磁気検出素子11、12をZ方向への変位量(符号f)だけ変位させた位置にある磁気検出素子24、25を示した断面図である。Z方向に符号f変位されることにより軸L2に対して非線対称に配置され、二つの磁気検出素子24、25では変位させる前の磁気検出素子11、12と同様に反対方向の磁束密度を検出するが、検出される磁束密度の大きさは異なる。
Here, a case will be confirmed in which the two magnetic detection elements 11 and 12 cannot be arranged symmetrically with respect to the axis L2 due to assembly errors, structural requirements, or the like.
10 is a cross-sectional view showing the magnetic detection elements 24 and 25 at positions obtained by displacing the two magnetic detection elements 11 and 12 in the Z direction by an amount (symbol f) from that shown in FIG. 5 in the current detection device 100 according to the first embodiment of the present invention. Displaced by symbol f in the Z direction, the magnetic detection elements 24 and 25 are arranged asymmetrically with respect to the axis L2, and detect magnetic flux densities in opposite directions, just like the magnetic detection elements 11 and 12 before displacement, but the magnitudes of the detected magnetic flux densities are different.

図11は本発明の実施の形態1に係る電流検出装置100において、図10に示す符号a+b+cを10mm、かつ、符号bを2mm固定し、符号a、cを1mmずつ変動させ、電路1に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12がZ方向へ変位量fが0.5mm変位された位置にある磁気検出素子24、25にて検出し、差動演算した結果の磁束密度の周波数特性の表(図11(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図11(b))である。11A and 11B show a table ( FIG. 11A ) of the frequency characteristics of the magnetic flux density obtained by detecting the magnetic flux density in the X direction using magnetic detection elements 24 and 25, which are located at positions where two magnetic detection elements 11 and 12 are displaced in the Z direction by an amount f of 0.5 mm, when a 100 A AC current (60 Hz to 100 kHz) is passed through current detection device 100 according to embodiment 1 of the present invention, with symbols a+b+c shown in FIG. 10 fixed at 10 mm and symbol b fixed at 2 mm, and symbols a and c varied by 1 mm each. FIG. 11B shows a table and graph ( FIG. 11B ) of the frequency characteristics of the magnetic flux density fluctuation rate, based on 60 Hz, obtained by differentially calculating the magnetic flux density in the X direction using magnetic detection elements 24 and 25, which are located at positions where two magnetic detection elements 11 and 12 are displaced in the Z direction by an amount f of 0.5 mm.

ここでパターンF1はa=4mm、c=4mm、F2はa=3mm、c=5mm、F3はa=2mm、c=6mm、F4はa=1mm、c=7mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。Here, for pattern F1, a = 4 mm, c = 4 mm, for F2, a = 3 mm, c = 5 mm, for F3, a = 2 mm, c = 6 mm, and for F4, a = 1 mm, c = 7 mm, and the frequencies of the AC current were calculated by simulation at eight frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz.

上述の通り10kHzで比較すると、図11(b)に示すように、パターンF1では-9.7%、F2では-6.8%、F3では2.5%、F4では20.4%となり、パターンF1よりも、パターンF2、パタ-ンF3の方が高周波まで精度よく測定できることがわかる。また、パターンF4では、パターンF1よりも高周波の精度が悪くなる。As shown in Figure 11(b), when comparing at 10 kHz as described above, the results are -9.7% for pattern F1, -6.8% for F2, 2.5% for F3, and 20.4% for F4, which shows that patterns F2 and F3 can measure more accurately up to high frequencies than pattern F1. Also, pattern F4 has worse accuracy at high frequencies than pattern F1.

この場合でも図6~図9と同様に、検出できる磁束密度が図5と比較して小さくなっているが、軸L1に対し、電流経路5と電流経路6が線対称に配置されたパターンF1よりも、図10で示す軸L1に対し、電流経路5と電流経路6が非線対称に配置されたパターンF2、F3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。In this case, as in Figures 6 to 9, the detectable magnetic flux density is smaller than that in Figure 5, but patterns F2 and F3 (the ratio of c to a is 1.7 to 3) in which current paths 5 and 6 are arranged non-axially symmetrically with respect to axis L1 shown in Figure 10 can measure with higher accuracy up to high frequencies than pattern F1 in which current paths 5 and 6 are arranged axially symmetrically with respect to axis L1.

以上説明したように軸L1に対し、二つの電流経路が非線対称配置されることにより、電路に流れる電流に応じて磁束を検出したときの周波数特性を向上させることができる。したがってこのような磁気検出素子の配置と、電路構造を電流検出装置に採用することにより、外部磁界の影響を抑制しつつ、周波数特性が高周波領域まで良好な電流検出装置を提供できる。As described above, the two current paths are arranged asymmetrically with respect to the axis L1, thereby improving the frequency characteristics when detecting magnetic flux in response to the current flowing through the current path. Therefore, by employing such an arrangement of magnetic detection elements and a current path structure in a current detection device, it is possible to provide a current detection device that has good frequency characteristics up to high frequencies while suppressing the effects of external magnetic fields.

また、パターン(A2~F2)と(A3~F3)とで、周波数60Hzを基準とした変動率の極性が反転している。今回はa、cの寸法を1mmずつ変動させたが、これらを最適な寸法とすることで、変動率を最小化することができる。Furthermore, the polarity of the fluctuation rate with a reference frequency of 60 Hz is reversed between patterns (A2 to F2) and (A3 to F3). In this study, the dimensions a and c were varied by 1 mm each, but by optimizing these dimensions, the fluctuation rate can be minimized.

実施の形態2.
図12(a)は、本発明の実施の形態2に係る電流検出装置101の外観を示す斜視図であり、図12(b)は、電路26の電流経路30、31、スリット32、回路部81の関係を示す図である。X方向を電路26の幅方向、Y方向を紙面下から上方向、Z方向をX方向及びY方向と平行な平面に対し垂直な方向とする。以降実施の形態2については、各方向を同様に定義する。電流検出装置101は、例えば銅材もしくはアルミ材からなる電路26が固定された絶縁材料(例えば、PPS:ポリフェニレンサルファイド、PA:ポリアミド、PBT:ポリブチレンテレフタレートなど)からなるケース部27に、回路部81及びコネクタ部29及び抵抗やコンデンサ(図示せず)などが半田付けにより搭載されたプリント基板28がネジ(図示せず)などにより固定されている。
Embodiment 2.
12(a) is a perspective view showing the appearance of a current detection device 101 according to a second embodiment of the present invention, and FIG. 12(b) is a diagram showing the relationship between current paths 30 and 31, slit 32, and circuit unit 81 of electric path 26. The X direction is the width direction of electric path 26, the Y direction is the top-to-bottom direction of the drawing, and the Z direction is the direction perpendicular to a plane parallel to the X and Y directions. Hereinafter, each direction will be defined similarly in the second embodiment. In the current detection device 101, an electric path 26 made of, for example, copper or aluminum is fixed to a case 27 made of an insulating material (e.g., PPS: polyphenylene sulfide, PA: polyamide, PBT: polybutylene terephthalate, etc.). A printed circuit board 28 on which a circuit unit 81, a connector unit 29, resistors, capacitors (not shown), etc. are mounted by soldering is fixed to the case 27 by screws (not shown).

Y方向に延伸した長板状の電路26は、折り曲げ線33に沿って該90度に折り曲げられ、その屈曲部に、スリット32が穿設され、スリット32にY方向と平行な向きで回路部81が配置されている。The long plate-shaped electrical circuit 26 extending in the Y direction is bent at 90 degrees along the bending line 33, a slit 32 is drilled at the bent portion, and a circuit portion 81 is arranged in the slit 32 in a direction parallel to the Y direction.

このとき、電路26のスリット32が設けられた部分では、電路26を流れる電流がスリット32により2分割されることで同一方向に二つの電流経路30、31が存在している。なお、二つの電流経路30、31は、折り曲げ前を30a、31a、折り曲げ後を30b、31bとする。回路部81は、実施の形態1で説明した回路部8と内部構成は同一であるが、端子16、17、18の突出方向が異なる。その突出方向はY方向であり、図13に示す軸L1と垂直方向である。At this time, in the portion of the electric path 26 where the slit 32 is provided, the current flowing through the electric path 26 is divided into two by the slit 32, resulting in two current paths 30, 31 existing in the same direction. The two current paths 30, 31 are designated 30a, 31a before bending, and 30b, 31b after bending. The circuit unit 81 has the same internal configuration as the circuit unit 8 described in the first embodiment, but differs in the protruding direction of the terminals 16, 17, 18. The protruding direction is the Y direction, which is perpendicular to the axis L1 shown in FIG. 13 .

図13は、図12(b)に示す電流経路30a、31aに直交する断面34を矢印35から見た断面図である。電流経路30aと電流経路31a及びスリット32のX方向の長さを符号a、b、c、電路26の板厚を符号d、回路部81内の二つの磁気検出素子11、12のZ方向の距離を符号e、二つの磁気検出素子11、12を結ぶ線を軸L1、電路26の板厚の中心線を軸L2としている。磁気検出素子11、12は軸L2に対し線対称に配置されており、電流経路30a、31aは軸L2対し線対称となるように配置されているが、軸L1に対しては、非線対称となるように配置されている。13 is a cross-sectional view of a cross section 34 perpendicular to the current paths 30a and 31a shown in FIG. 12B, as viewed from the arrow 35. The lengths of the current paths 30a, 31a, and slit 32 in the X direction are indicated by symbols a, b, and c, the thickness of the electric circuit 26 is indicated by symbol d, the distance in the Z direction between the two magnetic detection elements 11 and 12 in the circuit unit 81 is indicated by symbol e, the line connecting the two magnetic detection elements 11 and 12 is indicated by axis L1, and the center line of the thickness of the electric circuit 26 is indicated by axis L2. The magnetic detection elements 11 and 12 are arranged line-symmetrically with respect to axis L2, and the current paths 30a and 31a are arranged line-symmetrically with respect to axis L2 but asymmetrically with respect to axis L1.

例えば符号a=2mm、b=2mm、c=6mm、d=0.8mm、e=2.5mmである。二つの磁気検出素子11、12は、X方向が感度軸となり、電路26に-Y方向から-Z方向へ電流を通電したとき、電流経路30a、31aに発生するそれぞれの磁束線36a、37a及び、電流経路30b、31bに発生するそれぞれの磁束線36b、37bの互いに反対方向となるX方向の磁束密度38、39を検出している。For example, the symbols a = 2 mm, b = 2 mm, c = 6 mm, d = 0.8 mm, and e = 2.5 mm. The two magnetic detection elements 11 and 12 have a sensitivity axis in the X direction, and when a current is passed through the electric circuit 26 from the -Y direction to the -Z direction, they detect magnetic flux densities 38 and 39 in the X direction, which are opposite to each other, of magnetic flux lines 36 a and 37 a generated in current paths 30 a and 31 a, respectively, and magnetic flux lines 36 b and 37 b generated in current paths 30 b and 31 b, respectively.

図14は本発明の実施の形態2に係る電流検出装置101において、図13に示す符号a+b+cを10mm、かつ、符号bを2mm固定し、符号a、cを1mmずつ変動させ、電路26に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図14(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図14(b))である。14A and 14B show a table (FIG. 14A) and a graph (FIG. 14B) of the frequency characteristics of the magnetic flux density obtained by detecting the magnetic flux density in the X direction using two magnetic detection elements 11 and 12 and performing differential calculations when a current detection device 101 according to the second embodiment of the present invention detects the magnetic flux density in the X direction when symbols a+b+c shown in FIG. 13 are fixed at 10 mm, symbol b is fixed at 2 mm, and symbols a and c are varied by 1 mm each and a 100 A AC current (60 Hz to 100 kHz) is passed through electric circuit 26.

ここでパターンG1はa=4mm、c=4mm、G2はa=3mm、c=5mm、G3はa=2mm、c=6mm、G4はa=1mm、c=7mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。上述の通り10kHzで比較すると、図14(b)に示すように、パターンG1では-8.1%、G2では-5.5%、G3では3.4%、G4では20.5%となり、パターンG1よりも、パターンG2、パタ-ンG3の方が高周波まで精度よく測定できることがわかる。また、パターンG4では、パターンG1よりも高周波の精度が悪くなる。Here, for pattern G1, a = 4 mm, c = 4 mm, for G2, a = 3 mm, c = 5 mm, for G3, a = 2 mm, c = 6 mm, and for G4, a = 1 mm, c = 7 mm. Simulations were performed using eight AC frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz. As shown in Figure 14(b), when compared at 10 kHz, the results were -8.1% for pattern G1, -5.5% for G2, 3.4% for G3, and 20.5% for G4. This indicates that patterns G2 and G3 provide better measurement accuracy up to higher frequencies than pattern G1. Furthermore, pattern G4 exhibits worse accuracy at higher frequencies than pattern G1.

以上の結果より、軸L1に対し、電流経路30と電流経路31が線対称に配置されたパターンG1よりも、軸L1に対し、電流経路30と電流経路31が非線対称に配置されたパターンG2、G3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができる。From the above results, it can be seen that patterns G2 and G3 (the ratio of c to a is 1.7 to 3), in which current path 30 and current path 31 are arranged non-axially symmetrically with respect to axis L1, can provide more accurate measurements up to high frequencies than pattern G1, in which current path 30 and current path 31 are arranged axially symmetrically with respect to axis L1.

また、符号a、b、c、d、eの条件が同じ図5と比較すると、電路を折り曲げることにより検出する磁束密度を増やすことができる。
実施の形態2では、電路26を-Z方向に90度に曲げた状態だけを説明したが、電路26は端部を+Z方向に90度曲げた状態でも同様の効果がある。
Furthermore, compared with FIG. 5 where the conditions of symbols a, b, c, d, and e are the same, the detected magnetic flux density can be increased by bending the electric path.
In the second embodiment, only the state in which the electric trace 26 is bent at 90 degrees in the −Z direction has been described, but the same effect can be obtained even when the end of the electric trace 26 is bent at 90 degrees in the +Z direction.

以上説明したように該90度に折り曲げられた電路においても、軸L1に対し、二つの電流経路が非線対称配置されることにより、電路に流れる電流に応じて磁束を検出したときの周波数特性を向上させることができる。したがってこのような磁気検出素子の配置と、電路構造を電流検出装置に採用することにより、外部磁界の影響を抑制しつつ、周波数特性が高周波領域まで良好な電流検出装置を提供できる。
また、回路部81の端子16、17、18の突出方向がY方向であり、XZ面に並行に位置するプリント基板28に容易に半田付けすることができる。
As described above, even in the case of the electric path bent at 90 degrees, the two current paths are arranged asymmetrically with respect to the axis L1, thereby improving the frequency characteristics when detecting magnetic flux in response to the current flowing through the electric path. Therefore, by employing such an arrangement of magnetic detection elements and an electric path structure in a current detection device, it is possible to provide a current detection device that has good frequency characteristics up to the high frequency range while suppressing the influence of external magnetic fields.
Furthermore, the terminals 16, 17, and 18 of the circuit section 81 protrude in the Y direction, and can be easily soldered to the printed circuit board 28 that is positioned parallel to the XZ plane.

実施の形態3.
図15(a)は、本発明の実施の形態3に係る電流検出装置102の外観を示す斜視図であり、図15(b)は、電路40の電流経路44、45、46、スリット47、回路部81の関係を示す図である。X方向を電路40の幅方向、Y方向を紙面下から上方向、Z方向をX方向及びY方向と平行な平面に対し垂直な方向とする。以降実施の形態3については、各方向を同様に定義する。電流検出装置102は、例えば銅材もしくはアルミ材からなる電路40が固定された絶縁材料(例えば、PPS:ポリフェニレンサルファイド、PA:ポリアミド、PBT:ポリブチレンテレフタレートなど)からなるケース部41に、回路部81及びコネクタ部43及び抵抗やコンデンサ(図示せず)などが半田付けにより搭載されたプリント基板42がネジ(図示せず)などにより固定されている。
Embodiment 3.
FIG. 15( a) is a perspective view showing the appearance of a current detection device 102 according to a third embodiment of the present invention, and FIG. 15( b) is a diagram showing the relationship between current paths 44, 45, and 46 of an electric circuit 40, a slit 47, and a circuit unit 81. The X direction is the width direction of the electric circuit 40, the Y direction is the top-to-bottom direction of the paper, and the Z direction is the direction perpendicular to a plane parallel to the X and Y directions. Hereinafter, the directions will be defined similarly in the third embodiment. The current detection device 102 includes a case 41 made of an insulating material (e.g., PPS: polyphenylene sulfide, PA: polyamide, PBT: polybutylene terephthalate, etc.) to which an electric circuit 40 made of, for example, copper or aluminum is fixed. A printed circuit board 42 on which a circuit unit 81, a connector unit 43, resistors, capacitors (not shown), etc. are mounted by soldering is fixed by screws (not shown) or the like.

Y方向に延伸した長板状の電路40は、折り曲げ線48沿って該90度に折り曲げられ(第一の屈曲部)た後、さらに折り曲げ線49沿って該90度に折り曲げられ(第二の屈曲部)該U字型の形状となる。折り曲げ線48で曲げられた第一の屈曲部に、スリット47が穿設され、スリット47にY方向と平行な向きで回路部81が配置されている。このとき、電路40のスリット47が設けられた部分では、電路40を流れる電流がスリット47により2分割されることで、同一方向に二つの電流経路44、45に分かれて存在している。The long plate-like electric path 40 extending in the Y direction is bent 90 degrees along a bending line 48 (first bend) and then further bent 90 degrees along a bending line 49 (second bend) to form the U-shape. A slit 47 is formed in the first bend bent at the bending line 48, and a circuit section 81 is disposed in the slit 47 in a direction parallel to the Y direction. At this time, in the portion of the electric path 40 where the slit 47 is formed, the current flowing through the electric path 40 is divided into two by the slit 47, and thus exists as two current paths 44 and 45 in the same direction.

なお、二つの電流経路44、45は、折り曲げ線48で折り曲げられる前を44a、45a、折り曲げられた(第一の屈曲部)後を44b、45b、さらに二つの電流経路44、45が合流し、折り曲げ線49で折り曲げられた(第二の屈曲部)後の電流経路を46とする。回路部81は、実施の形態1で説明した回路部8と内部構成は同一であるが、端子16、17、18の突出方向が異なる。その突出方向はY方向であり、図16に示す軸L1と垂直方向である。The two current paths 44, 45 are designated 44a and 45a before being bent at bending line 48, 44b and 45b after being bent (first bent portion), and a further current path 46 after the two current paths 44, 45 join and are bent at bending line 49 (second bent portion). Circuit unit 81 has the same internal configuration as circuit unit 8 described in embodiment 1, but differs in the protruding directions of terminals 16, 17, and 18. The protruding direction is the Y direction, which is perpendicular to axis L1 shown in FIG. 16 .

図16は、図15(b)に示す電流経路44a、45aに直交する断面50を矢印51から見た断面図である。電流経路44aと電流経路45a及びスリット47のX方向の長さを符号a、b、c、電路40の板厚を符号d、回路部81内の二つの磁気検出素子11、12のZ方向の距離を符号e、二つの磁気検出素子11、12を結ぶ線を軸L1、電路40の板厚の中心線を軸L2としている。磁気検出素子11、12は軸L2に対し線対称に配置されており、電流経路44a、45aは軸L2対し線対称となるように配置されているが、軸L1に対しては、非線対称となるように配置されている。16 is a cross-sectional view of a cross section 50 perpendicular to the current paths 44a and 45a shown in FIG. 15B, as viewed from the arrow 51. The lengths of the current paths 44a and 45a and the slit 47 in the X direction are indicated by symbols a, b, and c, the thickness of the electric circuit 40 is indicated by symbol d, the distance in the Z direction between the two magnetic detection elements 11 and 12 in the circuit unit 81 is indicated by symbol e, the line connecting the two magnetic detection elements 11 and 12 is indicated by axis L1, and the center line of the thickness of the electric circuit 40 is indicated by axis L2. The magnetic detection elements 11 and 12 are arranged line-symmetrically with respect to the axis L2, and the current paths 44a and 45a are arranged line-symmetrically with respect to the axis L2 but asymmetrically with respect to the axis L1.

例えば符号a=2mm、b=2mm、c=6mm、d=0.8mm、e=2.5mmである。二つの磁気検出素子11、12は、X方向が感度軸となり、電路40に矢印51から電流経路46へ電流を通電したとき、電流経路44a、45aに発生するそれぞれの磁束線52a、53a及び、電流経路44b、45bに発生するそれぞれの磁束線52b、53b、電流経路46に発生する磁束線54の互いに反対方向となるX方向の磁束密度55、56を検出している。For example, the symbols a = 2 mm, b = 2 mm, c = 6 mm, d = 0.8 mm, and e = 2.5 mm. The two magnetic detection elements 11 and 12 have a sensitivity axis in the X direction, and when a current is passed through the electric circuit 40 from the arrow 51 to the current path 46, they detect magnetic flux densities 55 and 56 in the X direction, which are opposite to each other, of magnetic flux lines 52 a and 53 a generated in the current paths 44 a and 45 a, magnetic flux lines 52 b and 53 b generated in the current paths 44 b and 45 b, and magnetic flux line 54 generated in the current path 46.

図17は本発明の実施の形態3に係る電流検出装置102において、図16に示す符号a+b+cを10mm、かつ、符号bを2mm固定し、符号a、cを1mmずつ変動させ、電路40に100Aの交流電流(60Hz~100kHz)を通電したさい発生するX方向の磁束密度を、二つの磁気検出素子11、12にて検出し、差動演算した結果の磁束密度の周波数特性の表(図17(a))、及び60Hzを基準とした磁束密度変動率の周波数特性の表とグラフ(図17(b))である。17A and 17B show a table ( FIG. 17A ) and a graph ( FIG. 17B ) showing the frequency characteristics of the magnetic flux density obtained by detecting the magnetic flux density in the X direction using two magnetic detection elements 11 and 12 and performing differential calculations when a 100 A AC current (60 Hz to 100 kHz) is applied to current detection device 102 according to embodiment 3 of the present invention, with symbols a+b+c shown in FIG. 16 fixed at 10 mm and symbol b fixed at 2 mm, and symbols a and c varied by 1 mm each.

ここでパターンH1はa=4mm、c=4mm、H2はa=3mm、c=5mm、H3はa=2mm、c=6mm、H4はa=1mm、c=7mmであり、交流電流の周波数は60Hz、100Hz、300Hz、1kHz、3kHz、10kHz、30kHz、100kHzの8周波数でシミュレーションにより試算した。上述の通り10kHzで比較すると、図17(b)に示すように、パターンH1では-5.1%、H2では-3.0%、H3では4.0%、H4では18.3%となり、パターンH1よりも、パターンH2、パタ-ンH3の方が高周波まで精度よく測定できることがわかる。また、パターンH4では、パターンH1よりも高周波の精度が悪くなる。Here, for pattern H1, a = 4 mm, c = 4 mm, for H2, a = 3 mm, c = 5 mm, for H3, a = 2 mm, c = 6 mm, and for H4, a = 1 mm, c = 7 mm. The AC frequencies were calculated by simulation at eight frequencies: 60 Hz, 100 Hz, 300 Hz, 1 kHz, 3 kHz, 10 kHz, 30 kHz, and 100 kHz. As shown in Figure 17(b), when compared at 10 kHz, the results were -5.1% for pattern H1, -3.0% for H2, 4.0% for H3, and 18.3% for H4. This indicates that patterns H2 and H3 can measure more accurately up to higher frequencies than pattern H1. Furthermore, pattern H4 has worse accuracy at higher frequencies than pattern H1.

以上の結果より、軸L1に対し、電流経路44と電流経路45が線対称に配置されたパターンH1よりも、軸L1に対し、電流経路44と電流経路45が非線対称に配置されたパターンH2、H3(cとaの比が1.7~3)の方が高周波まで精度よく測定することができるFrom the above results, it can be seen that patterns H2 and H3 (the ratio of c to a is 1.7 to 3) in which the current paths 44 and 45 are arranged non-axially symmetrically with respect to the axis L1 can provide more accurate measurements up to high frequencies than pattern H1 in which the current paths 44 and 45 are arranged axially symmetrically with respect to the axis L1.

また、実施の形態2と同様に符号a、b、c、d、eの条件が同じ図5と比較すると、電路をさらに折り曲げることによりさらに検出する磁束密度を増やすことができる。Furthermore, compared with FIG. 5, which has the same conditions for the symbols a, b, c, d, and e as in the second embodiment, the detected magnetic flux density can be further increased by further bending the electric path.

本実施の形態3では、スリット47は、第一の屈曲部にのみを穿設されており、第二の屈曲部へ穿設されていない。第二の屈曲部へ第一の屈曲部同様のスリット47が穿設されている場合、電流経路46から発生する磁束線54は、電流経路44a、45aから発生する磁束線52a、53aと同様、磁気検出素子12へは、X方向とZ方向で合成された磁束密度が印加される。その結果、X方向の磁束密度のみを検出する磁気検出素子12は、検出する磁束密度が低下する。第二の屈曲部へスリット47を穿設させないことで、磁気検出素子12では、電流経路46から発生する磁束線54がX方向と略並行となり、より多くの磁束密度を検出することができる。In the third embodiment, the slits 47 are formed only in the first bend, but not in the second bend. If the same slits 47 as in the first bend were formed in the second bend, the magnetic flux lines 54 generated from the current path 46 would be applied to the magnetic detection element 12 with a magnetic flux density that is a composite of the X and Z directions, just like the magnetic flux lines 52a and 53a generated from the current paths 44a and 45a. As a result, the magnetic detection element 12, which detects only the magnetic flux density in the X direction, would detect a lower magnetic flux density. By not forming the slits 47 in the second bend, the magnetic flux lines 54 generated from the current path 46 would be approximately parallel to the X direction, allowing the magnetic detection element 12 to detect a greater magnetic flux density.

実施の形態3では、電路40を折り曲げ線48沿って-Z方向に該90度に折り曲げられた後、さらに折り曲げ線49沿って-Y方向に該90度に折り曲げられ該U字型の形状とした状態だけを説明したが、電路40を折り曲げ線48に沿ってZ方向に該90度に折り曲げられた後、さらに-Y方向に該90度に折り曲げられ該U字型の形状とした状態でも同様の効果がある。In the third embodiment, only the state in which the electrical circuit 40 is bent at 90 degrees in the -Z direction along the bending line 48, and then further bent at 90 degrees in the -Y direction along the bending line 49 to form the U-shape has been described; however, the same effect can be achieved even if the electrical circuit 40 is bent at 90 degrees in the Z direction along the bending line 48, and then further bent at 90 degrees in the -Y direction to form the U-shape.

以上説明したように該90度に折り曲げられた後、さらに該90度に折り曲げ該U字型の形状とした電路においても、軸L1に対し、二つの電流経路が非線対称配置されることにより、電路に流れる電流に応じて磁束を検出したときの周波数特性を向上させることができる。したがってこのような磁気検出素子の配置と、電路構造を電流検出装置に採用することにより、外部磁界の影響を抑制しつつ、周波数特性が高周波領域まで良好な電流検出装置を提供できる。
また、回路部81の端子16、17、18の突出方向がY方向であり、XZ面に並行に位置するプリント基板42に容易に半田付けすることができる。
As described above, even in an electric circuit that is bent 90 degrees and then bent again 90 degrees to form the U-shape, the two current paths are arranged non-symmetrically with respect to the axis L1, thereby improving the frequency characteristics when detecting magnetic flux in response to the current flowing in the electric circuit. Therefore, by employing such an arrangement of magnetic detection elements and an electric circuit structure in a current detection device, it is possible to provide a current detection device that has good frequency characteristics up to high frequencies while suppressing the influence of external magnetic fields.
Furthermore, the terminals 16, 17, and 18 of the circuit section 81 protrude in the Y direction, and can be easily soldered to the printed circuit board 42 that is positioned parallel to the XZ plane.

実施の形態4.
図18(a)は、本発明の実施の形態4に係る電流検出装置103の外観を示す斜視図であり、図18(b)は、3本並んだ電路57と各スリット61、各回路部81の関係を示す図である。X方向を電路57の幅方向、Y方向を紙面下から上方向、Z方向をX方向及びY方向と平行な平面に対し垂直な方向とする。以降実施の形態4については、各方向を同様に定義する。
Embodiment 4.
18(a) is a perspective view showing the appearance of a current detection device 103 according to a fourth embodiment of the present invention, and FIG. 18(b) is a diagram showing the relationship between three lined-up electric traces 57, each slit 61, and each circuit portion 81. The X direction is the width direction of the electric traces 57, the Y direction is the direction from bottom to top on the page, and the Z direction is the direction perpendicular to a plane parallel to the X and Y directions. Hereinafter, in the fourth embodiment, each direction will be defined similarly.

電流検出装置103は、例えば銅材もしくはアルミ材からなる板厚方向に該U字形状に折り曲げられ、屈曲部へスリット61が穿設され、X方向に並んだ3本の実施の形態3同様の電路57(-X方向から順番に電路57U、57V、57W)が固定された絶縁材料(例えば、PPS:ポリフェニレンサルファイド、PA:ポリアミド、PBT:ポリブチレンテレフタレートなど)からなるケース部58に、各電路57へ穿設されたスリット61U、61V、61Wへ配置された回路部81U、81V、81W及びコネクタ部60及び抵抗やコンデンサ(図示せず)などが半田付けにより搭載されたプリント基板59がネジ(図示せず)などにより固定されている。The current detection device 103 is made of, for example, copper or aluminum, and is bent into a U-shape in the thickness direction. Slits 61 are drilled at the bent portions. Three electric circuits 57 similar to those of the third embodiment, arranged in the X direction (electric circuits 57U, 57V, 57W in order from the -X direction), are fixed to the case 58, which is made of an insulating material (for example, PPS: polyphenylene sulfide, PA: polyamide, PBT: polybutylene terephthalate, etc.). Circuit sections 81U, 81V, 81W and connector section 60 arranged in slits 61U, 61V, 61W drilled in each electric circuit 57, as well as resistors, capacitors (not shown), and the like are soldered to the case 58. The printed circuit board 59 is fixed to the case 58 with screws (not shown) or the like.

各電路57及び各回路部81は実施の形態3で説明したものと同じ構成のため、説明を省略する。なお、電路57U、57V、57Wに流れる電流をU相電流、V相電流、W相電流とする。このように該U字形状で加工され、屈曲部へスリット61U、61V、61Wが穿設された電路57U、57V、57Wと3つの回路部81U、81V、81Wを3つ備えることで、電流検出装置103において、三相の電流を検出することができる。Each electric path 57 and each circuit unit 81 has the same configuration as that described in embodiment 3, and therefore description thereof will be omitted. The currents flowing through electric paths 57U, 57V, and 57W are referred to as U-phase current, V-phase current, and W-phase current. By providing three electric paths 57U, 57V, and 57W that are processed into a U-shape and have slits 61U, 61V, and 61W drilled in the bent portions, and three circuit units 81U, 81V, and 81W, current detection device 103 can detect three-phase currents.

図18(a)、(b)に示すように電流検出装置103では、X方向に並んだ、互いに隣接する相の回路部81U、81V、81Wと電路57U、57V、57WはZ方向にずれるように配置されている。この点について、図19、20を参照し説明する。18(a) and 18(b), in the current detection device 103, the circuit units 81U, 81V, and 81W and the electric circuits 57U, 57V, and 57W of adjacent phases aligned in the X direction are arranged so as to be offset in the Z direction. This point will be described with reference to FIGS. 19 and 20.

図19は、図18(b)に示す、電路57U、57V、回路部81U、81Vに対し、ZX平面に平行な断面62を矢印63から見た断面図である。電路57Uのスリット61Uが設けられた部分では、電路57Uを流れるU相電流がスリット61Uにより2分割されることで、同一方向に二つの電流経路64、65に分かれて存在している。19 is a cross-sectional view of electric circuits 57U and 57V and circuit units 81U and 81V shown in FIG. 18B, taken along a cross section 62 parallel to the ZX plane as viewed from an arrow 63. In the portion of electric circuit 57U where slit 61U is provided, the U-phase current flowing through electric circuit 57U is split into two by slit 61U, and thus exists as two current paths 64 and 65 flowing in the same direction.

二つの電流経路64、65のY軸に平行な電路を電流経路64a、65a、Z方向に平行な電路を電流経路64b、65b、さらに二つの電流経路64、65が合流し、Y方向に平行で、電流経路64a、65aとは反対方向にU相電流が流れる電路を電流経路66とする。The paths parallel to the Y axis of the two current paths 64, 65 are current paths 64a, 65a, the paths parallel to the Z direction are current paths 64b, 65b, and the path where the two current paths 64, 65 merge, is parallel to the Y direction, and a U-phase current flows in the opposite direction to the current paths 64a, 65a is current path 66.

電路57Vのスリット61Vに配置された回路部81Vに搭載された二つの磁気検出素子11V、12Vは、実施の形態3での説明と同様に電路57Vに電流を通電したさい、二つの磁気検出素子11V、12Vは、それぞれ反対方向のX方向の磁束密度70、71を検出している。Two magnetic detection elements 11V and 12V mounted on a circuit section 81V arranged in a slit 61V of an electric circuit 57V detect magnetic flux densities 70 and 71 in opposite directions, that is, in the X direction, when a current is passed through the electric circuit 57V, as described in the third embodiment.

電路57Uの電流経路64a、65aの板厚の中心線を軸L3、電路57Uの電流経路66の板厚の中心線を軸L4とし、軸L3と軸L4のZ方向の中心線を中心線L5とする。このとき、隣相である57Vのスリット61Vに配置された磁気検出素子11V、12Vは中心線L5に対して略対称となるように配置されている。ここでは、電路57Uと回路部81Vに搭載されている磁気検出素子11V、12Vとの関係を示したが、電路57Vと回路部81U、81W及び電路57Wと回路部81Vも同様の位置関係になるように配置されている。The center line of the thickness of current paths 64a and 65a of electric circuit 57U is axis L3, the center line of the thickness of current path 66 of electric circuit 57U is axis L4, and the center line of axes L3 and L4 in the Z direction is center line L5. In this case, magnetic detection elements 11V and 12V arranged in slit 61V of adjacent phase 57V are arranged so as to be approximately symmetrical with respect to center line L5. Here, the relationship between electric circuit 57U and magnetic detection elements 11V and 12V mounted on circuit unit 81V is shown, but electric circuit 57V and circuit units 81U and 81W, and electric circuit 57W and circuit unit 81V are also arranged so as to have a similar positional relationship.

電路57Uの電流経路66に-Y方向からU相電流を通電したとき、電路57Uから発生する磁束は、電流経路64a、65aから発生する磁束線67a、67b、電流経路64b、65bから発生する磁束線68a、68b、電流経路66から発生する磁束線69となる。また、磁束線67a、67bが合成された磁束線を磁束線67、磁束線68a、68bが合成された磁束線を磁束線68とする。When a U-phase current is applied to current path 66 of electric circuit 57U from the −Y direction, magnetic flux generated from electric circuit 57U becomes magnetic flux lines 67a and 67b generated from current paths 64a and 65a, magnetic flux lines 68a and 68b generated from current paths 64b and 65b, and magnetic flux line 69 generated from current path 66. The magnetic flux line formed by combining magnetic flux lines 67a and 67b is magnetic flux line 67, and the magnetic flux line formed by combining magnetic flux lines 68a and 68b is magnetic flux line 68.

このとき電路57UのX方向に隣接し、隣相である電路57Vに配置された磁気検出素子11V、12Vが磁束線67、68、69から受ける影響について説明する。
まずは、磁束線68により磁気検出素子11V、12Vが受ける影響を説明する。
磁束線68の影響により、磁気検出素子11Vでは、X方向の磁束密度が検出され、同様に磁気検出素子12VでもX方向の磁束密度が検出される。このとき、磁気検出素子11V、12Vは、電流経路64b、65bから見たときX方向及びY方向にほぼ等しい位置に配置されている。そのため、Z方向に延伸した電路64b、65bから発生する磁束68により、磁気検出素子11V、12Vでは、同一方向に同等の磁束密度が検出される。そのため、差動演算することにより、磁束線68の影響をキャンセルすることができる。
The influence of the magnetic flux lines 67, 68, and 69 on the magnetic detection elements 11V and 12V arranged on the electric circuit 57V, which is adjacent to the electric circuit 57U in the X direction and is the adjacent phase, will be described below.
First, the influence of the magnetic flux lines 68 on the magnetic detection elements 11V and 12V will be described.
Due to the influence of the magnetic flux lines 68, the magnetic detection element 11V detects a magnetic flux density in the X direction, and similarly, the magnetic detection element 12V detects a magnetic flux density in the X direction. At this time, the magnetic detection elements 11V and 12V are disposed at approximately equal positions in the X and Y directions when viewed from the current paths 64b and 65b. Therefore, the magnetic flux 68 generated from the current paths 64b and 65b extending in the Z direction causes the magnetic detection elements 11V and 12V to detect equivalent magnetic flux densities in the same direction. Therefore, the influence of the magnetic flux lines 68 can be canceled out by performing a differential calculation.

次に磁束線67、69により磁気検出素子11V、12Vが受ける影響を説明する。磁束線67の影響により、磁気検出素子11Vでは、X方向の磁束密度を検出し、同様に磁気検出素子12VでもX方向の磁束密度を検出する。このとき、磁気検出素子11Vと磁気検出素子12Vでは、電流経路64a、65aの板厚の中心線である軸L3とZ方向の距離が異なるため、軸L3と距離が近い、磁気検出素子12Vで検出される磁束密度の方が磁気検出素子11Vよりも大きくなる。そのため、差動演算したさい、磁束密度の差分だけ影響を受けることになる。Next, the influence of magnetic flux lines 67 and 69 on magnetic detection elements 11V and 12V will be described. Due to the influence of magnetic flux line 67, magnetic detection element 11V detects magnetic flux density in the X direction, and similarly, magnetic detection element 12V detects magnetic flux density in the X direction. At this time, magnetic detection elements 11V and 12V differ in the distance in the Z direction from axis L3, which is the center line of the plate thickness of current paths 64a and 65a. Therefore, the magnetic flux density detected by magnetic detection element 12V, which is closer to axis L3, is greater than that detected by magnetic detection element 11V. Therefore, when a differential calculation is performed, the effect is due to the difference in magnetic flux density.

しかしながら、電流経路66から発生する磁束線69の影響により、磁気検出素子11V、12Vでは、磁束線67の影響とは反対に軸L4と距離が近い、磁気検出素子11Vで検出される磁束密度の方が磁気検出素子12Vよりも大きくなる。ここで、中心線L5は、軸L3と軸L4のZ方向の中心線であり、磁気検出素子11V、12Vは中心線L5に対して略対称となるように配置されているため、磁気検出素子11V、12Vでは、磁束線67と磁束線69から受ける影響が合成され、略同一の大きさの磁束密度となる。そのため、差動演算することにより、磁束線67、69の影響をキャンセルすることができる。However, due to the influence of magnetic flux lines 69 generated from current path 66, the magnetic flux density detected by magnetic detection element 11V, which is closer to axis L4, is greater than that detected by magnetic detection element 12V, in contrast to the influence of magnetic flux lines 67. Here, center line L5 is the center line of axes L3 and L4 in the Z direction, and magnetic detection elements 11V and 12V are arranged approximately symmetrically with respect to center line L5. Therefore, the influences of magnetic flux lines 67 and 69 are combined in magnetic detection elements 11V and 12V, resulting in approximately the same magnetic flux density. Therefore, the influences of magnetic flux lines 67 and 69 can be canceled out by performing a differential calculation.

図20では、シミュレーションにより電路57Uへ直流100Aを通電したときに発生する磁束線からX方向のみを抽出した磁束分布を示す。
電路57Uへ電流を通電したさい、電路57UのX方向に隣接し、隣相である電路57Vに配置された磁気検出素子11Vが受ける方向の磁束密度は0.83mT、磁気検出素子12Vが受けるX方向の磁束密度は0.83mTとなり、差動演算することで隣相である電路57Uからの影響を受けなくなることがわかる。また、他の隣相の電路と磁気検出素子も同様の結果となる。
FIG. 20 shows a magnetic flux distribution obtained by extracting only the X direction from magnetic flux lines generated when a direct current of 100 A is applied to the electric circuit 57U by simulation.
When a current is passed through electric circuit 57U, the magnetic flux density in the direction received by magnetic detection element 11V, which is disposed on electric circuit 57V, an adjacent phase adjacent to electric circuit 57U in the X direction, is 0.83 mT, and the magnetic flux density in the X direction received by magnetic detection element 12V is 0.83 mT, and it can be seen that by performing a differential calculation, there is no influence from electric circuit 57U, which is an adjacent phase. Similar results are obtained for the electric circuits and magnetic detection elements of the other adjacent phases.

また、ここではU字型形状の説明を行ったが、電路端部をさらに-Z方向、+Z方向にそれぞれ該90度曲げた状態でも同様の効果がある。Although the U-shaped configuration has been described here, the same effect can be obtained when the ends of the electrical path are bent by 90 degrees in the -Z direction and +Z direction.

以上説明したように板厚方向にU字型に加工した複数の電路をずらして配置することにより、隣相からの影響を受けなくすることができる。また、隣相からの影響を受けなくすることができるため、隣相との距離を短くすることができ、電流検出装置を小型化できる。As explained above, by arranging multiple U-shaped current paths in a staggered manner in the thickness direction, it is possible to eliminate the influence of adjacent phases. Furthermore, since it is possible to eliminate the influence of adjacent phases, it is possible to shorten the distance between adjacent phases, and it is possible to make the current detection device smaller.

したがってこのような磁気検出素子の配置と、電路構造を電流検出装置に採用することにより、外部磁界の影響を抑制しつつ、小型で周波数特性が高周波領域まで良好な電流検出装置を提供できる。Therefore, by employing such an arrangement of magnetic detection elements and a current path structure in a current detection device, it is possible to provide a small current detection device with good frequency characteristics up to high frequency ranges while suppressing the influence of external magnetic fields.

図21は、図18(b)の電路57(57U、57V)を変形した電路72(72U、72V)と回路部81(81U、81V)を示す斜視図である。図22は、図21の電路72V周辺をX方向から見た側面図である。Fig. 21 is a perspective view showing electric paths 72 (72U, 72V) and circuit sections 81 (81U, 81V) which are modifications of electric paths 57 (57U, 57V) in Fig. 18(b). Fig. 22 is a side view of the periphery of electric path 72V in Fig. 21 as seen from the X direction.

図21において、電路72Vは、-Z方向に延伸し、折り曲げ線73に沿ってY方向に該90度に折り曲げられ(第三の屈曲部)、その後折り曲げ線74に沿って-Z方向に該90度折り曲げられ(第一の屈曲部)た第一のクランプ曲げ部と、さらに折り曲げ線75に沿って-Y方向に該90度に折り曲げられ(第二の屈曲部)、その後折り曲げ線76に沿って-Z方向に該90度に折り曲げられ(第四の屈曲部)た第二のクランプ曲げ部から成る該凸字型の形状となる。折り曲げ線74で曲げられた第一の屈曲部に、スリット77Vが穿設され、スリット77VにY方向と平行な向きで回路部81Vが配置されている。このとき、スリット77Vが穿設された部分では、電路72Vを流れる電流がスリット77Vにより2分割されることで、同一方向に二つの電流経路78V、79Vに分かれて存在している。21 , electric path 72V extends in the −Z direction, is bent 90 degrees in the Y direction along bend line 73 (third bend), then bent 90 degrees in the −Z direction along bend line 74 (first bend), and then bent 90 degrees in the −Z direction along bend line 74 (first bend). This first bend is then bent 90 degrees in the −Y direction along bend line 75 (second bend), and then bent 90 degrees in the −Z direction along bend line 76 (fourth bend), resulting in a convex shape. A slit 77V is formed in the first bend formed by bend line 74, and a circuit unit 81V is disposed in slit 77V, oriented parallel to the Y direction. At this time, in the portion where slit 77V is formed, the current flowing through electric path 72V is split into two by slit 77V, resulting in two current paths 78V and 79V flowing in the same direction.

なお、二つの電流経路78V、79Vは、電路40と同様に第一の屈曲部(折り曲げ線92での折り曲げ)で折り曲げられた後合流し、第二の屈曲部(折り曲げ線75での折り曲げ)で折り曲げられ電流経路を80Vとなる。
回路部81Vは、実施の形態1で説明した回路部8と内部構成は同一であるが、端子16、17、18の突出方向が異なる。その突出方向はY方向であり、図16に示す軸L1と垂直方向である。以上V相の電路72Vを代表として説明したが、U相の電路72U、も同様である。なお図21では、W相の電路は記載していないが、W相の電路が有る場合も同様である。
In addition, the two current paths 78V and 79V are bent at the first bend (bending at bend line 92) in the same manner as the electrical path 40, then merge and are bent at the second bend (bending at bend line 75) to make the current path 80V.
The circuit unit 81V has the same internal configuration as the circuit unit 8 described in the first embodiment, but differs in the direction in which the terminals 16, 17, and 18 protrude. The direction in which the terminals protrude is the Y direction, which is perpendicular to the axis L1 shown in FIG. 16. The V-phase electric circuit 72V has been described above as a representative example, but the same applies to the U-phase electric circuit 72U. Note that although the W-phase electric circuit is not shown in FIG. 21, the same applies when a W-phase electric circuit is present.

電路72においても、電流経路78、79と回路部81との関係が、図16に示す実施の形態3の電路40の電流経路44、45と回路部81との関係と同様であるので、図16の軸L1に対し、二つの電流経路が非線対称配置されることにより、電路に流れる電流に応じて磁束を検出したときの周波数特性を向上させることができる。したがってこのような磁気検出素子の配置と、電路構造を電流検出装置に採用することにより、外部磁界の影響を抑制しつつ、周波数特性が高周波領域まで良好な電流検出装置を提供できる。In the electric circuit 72, the relationship between the current paths 78 and 79 and the circuit unit 81 is similar to the relationship between the current paths 44 and 45 and the circuit unit 81 of the electric circuit 40 of the third embodiment shown in Fig. 16 , and therefore the two current paths are arranged non-symmetrically with respect to the axis L1 in Fig. 16 , thereby improving the frequency characteristics when the magnetic flux is detected in accordance with the current flowing through the electric circuit. Therefore, by employing such an arrangement of the magnetic detection elements and an electric circuit structure in a current detection device, it is possible to provide a current detection device that has good frequency characteristics up to the high frequency range while suppressing the influence of external magnetic fields.

また、回路部81の端子16、17、18の突出方向がY方向であり、電路72の幅方向(X方向)と電路72の延伸方向(Z方向)が作るXZ面に並行に位置するプリント基板59に容易に半田付けすることができる。
また、電路72の形状変更により図19に示すの軸L3と軸L4の位置が変化し、回路部81のZ方向の位置が変化しても、回路部81のプリント基板59との半田付け位置を変えることで対応が可能となる。
Furthermore, the protruding direction of the terminals 16, 17, and 18 of the circuit section 81 is the Y direction, and they can be easily soldered to the printed circuit board 59, which is positioned parallel to the XZ plane formed by the width direction (X direction) of the electrical path 72 and the extension direction (Z direction) of the electrical path 72.
Furthermore, even if the positions of the axes L3 and L4 shown in FIG. 19 change due to a change in the shape of the electrical circuit 72 and the position of the circuit part 81 in the Z direction changes, this can be accommodated by changing the soldering position of the circuit part 81 to the printed circuit board 59.

図22に示す電路72のような該凸型の形状の電路の場合、図1のような平板の電路と異なり、電路の板厚方向(Y方向)に厚みf1を持つ形状となり電流検出装置のY方向の厚さが厚くなる懸念がある。In the case of a convex-shaped electrical circuit such as electrical circuit 72 shown in Figure 22, unlike a flat electrical circuit such as that shown in Figure 1, the electrical circuit has a thickness f1 in the thickness direction (Y direction) of the plate, and there is a concern that the thickness of the current detection device in the Y direction will become thicker.

回路部81を用いた場合は、回路部81の端子16、17、18をZ方向に並べて、その突出方向をY方向とすることで、回路部81のモールドパッケージのY方向寸法f2は、端子の数や大きさの影響を受けることがなく、磁気検出素子11、12配置に必要な寸法(例えば3.5mm)が確保できればよく、電路72のY方向の寸法f1も、回路部81の端子16、17、18の影響を受けることがなく、磁気検出素子11、12を囲むような配置に必要な寸法(例えば5mm)が確保できればよい。When the circuit unit 81 is used, the terminals 16, 17, and 18 of the circuit unit 81 are arranged in the Z direction with their protruding direction set in the Y direction, so that the Y-direction dimension f2 of the molded package of the circuit unit 81 is not affected by the number or size of the terminals, and it is sufficient to ensure the dimension (e.g., 3.5 mm) required for arranging the magnetic detection elements 11 and 12; the Y-direction dimension f1 of the electrical circuit 72 is also not affected by the terminals 16, 17, and 18 of the circuit unit 81, and it is sufficient to ensure the dimension (e.g., 5 mm) required for arranging the magnetic detection elements 11 and 12 surrounding them.

一方従来の回路部8を用いた場合は、端子16、17、18がZ方向に突出するので、回路部8と電路72のY方向寸法は端子の数や大きさの影響を受け大きくなる。回路図8のZ方向に突出する端子16、17、18を半田付けするプリント基板は、XY面に並行に位置することとなり、Y方向の寸法を小さくすると部品実装面積の確保が困難となる。On the other hand, when using the conventional circuit unit 8, the terminals 16, 17, and 18 protrude in the Z direction, so the Y-direction dimension of the circuit unit 8 and the electrical path 72 is greatly affected by the number and size of the terminals. The printed circuit board to which the terminals 16, 17, and 18 protruding in the Z direction in the circuit diagram 8 are soldered is positioned parallel to the XY plane, and reducing the dimension in the Y direction makes it difficult to ensure a sufficient component mounting area.

以上より端子16、17、18の突出方向がY方向である回路部81を用いることによりY方向厚みの小さい電流検出装置を得ることができる。
なお、電路72のスリット77は第一の屈曲部のみに設けたが、第一の屈曲部から第三の屈曲部までつながるように設けてもよい。
また、電路72のスリット77は第三の屈曲部のみに設けてもよく、この場合は回路部81の端子16、17、18は-Y方向に突出させ、電路72の-Y方向に近接する位置にプリント基板59を配置してもよい。
As described above, by using the circuit section 81 in which the terminals 16, 17, and 18 protrude in the Y direction, it is possible to obtain a current detection device having a small thickness in the Y direction.
Although the slit 77 of the electric path 72 is provided only in the first bent portion, it may be provided so as to extend from the first bent portion to the third bent portion.
In addition, the slit 77 of the electrical circuit 72 may be provided only in the third bend, in which case the terminals 16, 17, and 18 of the circuit section 81 may be protruded in the -Y direction, and the printed circuit board 59 may be positioned in close proximity to the electrical circuit 72 in the -Y direction.

以上説明したように少なくとも一つの屈曲部へスリットが穿設された該凸型形状に折り曲げられた電路と、回路部内に配置された二つの磁気検出素子を結ぶ線に対し、垂直に引き出された端子を有する回路部とを組み合わせることにより、薄型な電流検出装置を提供できる。As described above, by combining the convexly bent electrical circuit with a slit drilled in at least one of the bent portions with a circuit section having terminals drawn out perpendicular to the line connecting the two magnetic detection elements arranged within the circuit section, a thin current detection device can be provided.

したがってこれまで説明したものの組み合わせにより、このような磁気検出素子の配置と端子部を有する回路部と、電路構造を電流検出装置に採用することにより、外部磁界の影響を抑制しつつ、小型で周波数特性が高周波領域まで良好な電流検出装置を提供できる。Therefore, by combining what has been described so far, and adopting such an arrangement of magnetic detection elements, a circuit section having terminal sections, and an electrical path structure in a current detection device, it is possible to provide a current detection device that is small in size and has good frequency characteristics up to the high frequency range while suppressing the effects of external magnetic fields.

1 :電路
2 :ケース部
3 :プリント基板
4 :コネクタ部
5 :電流経路
6 :電流経路
7 :スリット
8 :回路部
9 :断面
10 :矢印
11 :磁気検出素子
12 :磁気検出素子
13 :第一の増幅部
14 :第二の増幅部
15 :差動演算部
16 :電源端子
17 :電源端子
18 :出力端子
19 :基材
20 :磁束線
21 :磁束線
22 :X方向の磁束密度
23 :X方向の磁束密度
24 :磁気検出素子
25 :磁気検出素子
26 :電路
27 :ケース部
28 :プリント基板
29 :コネクタ部
30 :電流経路
31 :電流経路
32 :スリット
33 :折り曲げ線
34 :断面
35 :矢印
36 :磁束線
37 :磁束線
38 :X方向の磁束密度
39 :X方向の磁束密度
40 :電路
41 :ケース部
42 :プリント基板
43 :コネクタ部
44 :電流経路
45 :電流経路
46 :電流経路
47 :スリット
48 :折り曲げ線
49 :折り曲げ線
50 :断面
51 :矢印
52 :磁束線
53 :磁束線
54 :磁束線
55 :X方向の磁束密度
56 :X方向の磁束密度
57 :電路
58 :ケース部
59 :プリント基板
60 :コネクタ部
61 :スリット
62 :断面
63 :矢印
64 :電流経路
65 :電流経路
66 :電流経路
67 :磁束線
68 :磁束線
69 :磁束線
70 :X方向の磁束密度
71 :X方向の磁束密度
72 :電路
73 :折り曲げ線
74 :折り曲げ線
75 :折り曲げ線
76 :折り曲げ線
77 :スリット
78 :電流経路
79 :電流経路
80 :電流経路
81 :回路部
90 :電路
91 :電流経路
92 :電流経路
93 :スリット
94 :磁気検出素子
95 :磁気検出素子
96 :磁束線
97 :磁束線
98 :X方向の磁束密度
99 :X方向の磁束密度
100:電流検出装置
101:電流検出装置
102:電流検出装置
103:電流検出装置
1: Electrical circuit 2: Case portion 3: Printed circuit board 4: Connector portion 5: Current path 6: Current path 7: Slit 8: Circuit portion 9: Cross section 10: Arrow 11: Magnetic detection element 12: Magnetic detection element 13: First amplifier portion 14: Second amplifier portion 15: Differential calculation portion 16: Power supply terminal 17: Power supply terminal 18: Output terminal 19: Base material 20: Magnetic flux line 21: Magnetic flux line 22: Magnetic flux density in X direction 23: Magnetic flux density in X direction 24: Magnetic detection element 25: Magnetic detection element 26: Electrical circuit 27: Case portion 28: Printed circuit board 29: Connector portion 30: Current path 31: Current path 32: Slit 33: Bending line 34: Cross section 35: Arrow 36: Magnetic flux line 37: Magnetic flux line 38: Magnetic flux density in X direction 39 : Magnetic flux density in X direction 40 : Electrical circuit 41 : Case portion 42 : Printed circuit board 43 : Connector portion 44 : Current path 45 : Current path 46 : Current path 47 : Slit 48 : Bending line 49 : Bending line 50 : Cross section 51 : Arrow 52 : Magnetic flux line 53 : Magnetic flux line 54 : Magnetic flux line 55 : Magnetic flux density in X direction 56 : Magnetic flux density in X direction 57 : Electrical circuit 58 : Case portion 59 : Printed circuit board 60 : Connector portion 61 : Slit 62 : Cross section 63 : Arrow 64 : Current path 65 : Current path 66 : Current path 67 : Magnetic flux line 68 : Magnetic flux line 69 : Magnetic flux line 70 : Magnetic flux density in X direction 71 : Magnetic flux density in X direction 72 : Electrical circuit 73 : Bending line 74 : Bending line 75 : Bending line 76 : Bending line 77 : Slit 78 : Current path 79 : Current path 80 : Current path 81 : Circuit section 90 : Electrical path 91 : Current path 92 : Current path 93 : Slit 94 : Magnetic detection element 95 : Magnetic detection element 96 : Magnetic flux line 97 : Magnetic flux line 98 : Magnetic flux density in X direction 99 : Magnetic flux density in X direction 100 : Current detection device 101 : Current detection device 102 : Current detection device 103 : Current detection device

Claims (7)

被測定電流が流れる方向に延伸し、当該延伸方向の垂直な方向から貫通スリットが穿設され、前記貫通スリットにより電流経路1と電流経路2に分割された平板状の電路と
前記被測定電流によって前記電路の周囲に発生する磁束をそれぞれ検出する一対の磁気検出素子を備え、
前記電流経路1と電流経路2は、前記延伸方向に垂直な断面から見て、前記一対の磁気検出素子を結ぶ軸に対し、非線対称な形状を有し、
前記電路に流れる被測定電流は、前記貫通スリットにより、前記電流経路1と電流経路2に分流して同一方向に流れ
前記一対の磁気検出素子は、前記電流経路1と電流経路2に分流した電流より発生した磁界を貫通するように配置され、前記電路の幅方向に感度軸を有し、前記電路の当該延伸方向の垂直な方向から見て、貫通スリット投影面内に配置され、前記一対の磁気検出素子から得られた検出信号を差動演算する回路部を備え、
前記電流経路1と前記電流経路2との電路幅比が1.7以上3以下であることを特徴とする電流検出装置。
a flat electric circuit extending in a direction in which a current to be measured flows, with a through slit drilled in a direction perpendicular to the extending direction, the flat electric circuit being divided into a current path 1 and a current path 2 by the through slit; and a pair of magnetic detection elements each detecting a magnetic flux generated around the electric circuit by the current to be measured,
the current path 1 and the current path 2 have shapes that are asymmetrical with respect to an axis connecting the pair of magnetic detection elements when viewed from a cross section perpendicular to the extension direction;
The current to be measured flowing through the electric circuit is divided into current path 1 and current path 2 by the through slit and flows in the same direction ,
the pair of magnetic detection elements are arranged to penetrate a magnetic field generated by the currents branched into the current path 1 and the current path 2, have a sensitivity axis in the width direction of the electric path, are arranged within a through slit projection plane when viewed from a direction perpendicular to the extension direction of the electric path, and include a circuit unit that performs differential calculation of detection signals obtained from the pair of magnetic detection elements,
A current detection device characterized in that the path width ratio between the current path 1 and the current path 2 is 1.7 or more and 3 or less.
前記一対の磁気検出素子の素子間距離よりも、前記平板状の電路の板厚が小さいことを特徴とする請求項1に記載の電流検出装置。2. The current detection device according to claim 1, wherein the thickness of the flat electric circuit is smaller than the distance between the pair of magnetic detection elements. 前記一対の磁気検出素子の素子間中央と、前記平板状の電路の板厚の寸法を二等分する線が略一致していることを特徴とする請求項1~2に記載の電流検出装置。 3. The current detection device according to claim 1, wherein the center between the pair of magnetic detection elements is substantially aligned with a line that bisects the thickness of the flat electric circuit. 前記電路は、前記貫通スリットの有る部分で屈曲した第一の屈曲部を有することを特徴とする請求項1~3の何れか一項に記載の電流検出装置。4. The current detection device according to claim 1, wherein the electric path has a first bent portion bent at a portion where the through slit is present. 前記電路は、前記貫通スリットの有る部分で屈曲した第一の屈曲部と、前記貫通スリットの無い部分で屈曲した第二の屈曲部を有することを特徴とする請求項1~4の何れか一項に記載の電流検出装置。A current detection device as described in any one of claims 1 to 4, characterized in that the electric circuit has a first bent portion bent at the part where the through slit is present and a second bent portion bent at the part where the through slit is not present. 前記電路を二つ以上有し、
一つの前記電路の前記一対の磁気検出素子の素子間中央位置と、他の隣接する前記電路の前記第一の屈曲部と前記第二の屈曲部との中央位置が略一致し、
一つの前記電路の前記第一の屈曲部と前記第二の屈曲部との中央位置と、他の隣接する前記電路の前記一対の磁気検出素子の素子間中央位置が略一致することを特徴とする
請求項5に記載の電流検出装置。
The electric circuit has two or more
a central position between the pair of magnetic detection elements of one of the electric paths substantially coincides with a central position between the first bent portion and the second bent portion of another adjacent electric path;
The current detection device according to claim 5, wherein a central position between the first bend and the second bend of one of the electric paths is approximately the same as a central position between the pair of magnetic detection elements of another adjacent electric path.
前記磁気検出素子は、ホール素子、MR素子、GMR素子、又はTMR素子であることを特徴とする請求項1~6の何れか一項に記載の電流検出装置。7. The current detection device according to claim 1, wherein the magnetic detection element is a Hall element, an MR element, a GMR element, or a TMR element.
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