JP7772634B2 - Flow path structure and semiconductor manufacturing device - Google Patents

Description

The disclosed embodiments relate to a flow path structure and a semiconductor manufacturing apparatus.

Technology has been disclosed for semiconductor manufacturing equipment in which processes are carried out while estimating various process data based on data acquired using multiple types of sensors. For example, Patent Document 1 describes placing a semiconductor wafer on a stage equipped with a temperature sensor S1 as an example of a sensor, and acquiring temperature data in the vicinity of the semiconductor wafer. It also describes placing a temperature sensor S2 on the back surface of the shower plate.

International Publication No. 2021/157453

However, the above-mentioned conventional technology leaves room for further improvement in temperature measurement.

One aspect of the embodiment has been made in consideration of the above, and aims to provide a flow path structure and semiconductor manufacturing apparatus that can measure temperature with high accuracy.

A flow path structure according to one embodiment includes a base, a flow path, a plurality of openings, a first metal wiring, and a second metal wiring. The base has a first surface and is made of ceramic. The flow path is located inside the base and has a plurality of branch paths. The plurality of openings are located on the first surface and are connected to the plurality of branch paths, respectively. At least a portion of the first metal wiring is located inside the base and is made of a first metal. At least a portion of the second metal wiring is located inside the base and is made of a second metal different from the first metal. The first metal wiring and the second metal wiring are connected inside the base to form a thermocouple portion that functions as a thermocouple. When the first surface is viewed from the front, the thermocouple portion is located farther from the center of the first surface than the group of openings made up of the plurality of openings.

According to one aspect of the embodiment, it is possible to provide a flow path structure and semiconductor manufacturing apparatus that can measure temperature with high accuracy.

FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus according to an embodiment. FIG. 2 is a perspective view showing an example of the configuration of the flow path structure according to the embodiment. FIG. 3 is a front view showing an example of the configuration of the flow path structure according to the embodiment. FIG. 4 is a cross-sectional view taken along line AA in FIG. FIG. 5 is a front view illustrating an example of the configuration of the thermocouple unit according to the embodiment. FIG. 6 is a cross-sectional view showing an example of the configuration of a thermocouple unit according to an embodiment. FIG. 7 is a cross-sectional view showing an example of the configuration of a thermocouple unit according to an embodiment. FIG. 8 is a cross-sectional view showing an example of the configuration of a thermocouple unit according to an embodiment. FIG. 9 is a front view showing another example of the configuration of the thermocouple unit according to the embodiment. FIG. 10 is a cross-sectional view showing another example of the configuration of the thermocouple unit according to the embodiment. FIG. 11 is a cross-sectional view showing another example of the configuration of the thermocouple unit according to the embodiment. FIG. 12 is a front view showing an example of the configuration of a flow path structure according to the first modified example of the embodiment. FIG. 13 is a cross-sectional view showing an example of the configuration of a flow path structure according to the second modification of the embodiment. FIG. 14 is a front view showing an example of the configuration of a flow path structure according to a third modification of the embodiment. FIG. 15 is a front view showing an example of the configuration of a flow path structure according to the third modification of the embodiment. FIG. 16 is a front view showing an example of the configuration of a flow path structure according to the fourth modification of the embodiment. FIG. 17 is an enlarged cross-sectional view showing an example of the configuration of a flow path structure according to a fifth modification of the embodiment. FIG. 18 is an enlarged cross-sectional view showing an example of the configuration of a flow path structure according to a sixth modified example of the embodiment.

Embodiments of the flow path structure and semiconductor manufacturing apparatus disclosed herein will be described below with reference to the accompanying drawings. Note that the present invention is not limited to the embodiments described below.

Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing accuracy, installation accuracy, etc.

A technology has been disclosed that uses a temperature sensor to acquire temperature data within semiconductor manufacturing equipment, allowing various process data to be estimated while processing.

However, with the above-mentioned conventional technology, when it comes to the shower plate, which is a flow path structure, it is only possible to obtain temperature data from the back side of the shower plate, leaving room for further improvement. For example, if a temperature sensor were positioned on the shower plate closer to the semiconductor wafer, temperature data closer to the location where the process is occurring could be obtained.

<Semiconductor manufacturing equipment>
First, the configuration of a semiconductor manufacturing apparatus 100 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view showing an example of the configuration of a semiconductor manufacturing apparatus 100 according to an embodiment.

The semiconductor manufacturing apparatus 100 according to the embodiment is, for example, a plasma processing apparatus that processes semiconductor wafers W using plasma. Examples of such semiconductor manufacturing apparatus 100 include a CVD (Chemical Vapor Deposition) apparatus and a dry etching apparatus.

The semiconductor manufacturing apparatus 100 according to the embodiment includes a flow path structure 1, a chamber 110, a mounting table 120, and a shaft 130. The chamber 110 accommodates the flow path structure 1, at least a portion of the mounting table 120, and at least a portion of the shaft 130.

The interior of the chamber 110 can be evacuated or depressurized using an exhaust unit (not shown). An opening 111 is located on the side of the chamber 110 for loading and unloading the semiconductor wafer W.

The mounting table 120 is located below the flow path structure 1 within the chamber 110. The mounting table 120 supports the semiconductor wafer W on the surface facing the flow path structure 1, in this case, on the upper surface of the mounting table 120.

The shaft 130 supports the flow path structure 1 inside the chamber 110 and introduces a medium such as a process gas into the flow path structure 1. A through hole 131 is formed inside the shaft 130, and this through hole 131 is connected to the opening 3 of the flow path structure 1 (see Figure 2). The mounting table 120 and the shaft 130 may be made of ceramics. For example, aluminum oxide or aluminum nitride may be used as the ceramic.

In the semiconductor manufacturing apparatus 100, the process gas used in plasma processing is guided from the through-hole 131 in the shaft 130 through the flow path 4 (see FIG. 4) of the flow path structure 1 and then through the multiple openings 5 (see FIG. 3) into the chamber 110. In other words, the flow path structure 1 according to the embodiment functions, for example, as a shower plate in the semiconductor manufacturing apparatus 100.

<Flow path structure>
Next, the configuration of the flow channel structure 1 according to the embodiment will be described with reference to Fig. 2 to Fig. 4. Fig. 2 is a perspective view showing an example of the configuration of the flow channel structure 1 according to the embodiment, and Fig. 3 is a front view showing an example of the configuration of the flow channel structure 1 according to the embodiment. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 3.

As shown in Figures 2 to 4, the flow path structure 1 according to this embodiment includes a base 2, an opening 3 formed in the base 2, a flow path 4, and a plurality of openings 5.

As shown in FIG. 2, the base 2 is, for example, disk-shaped and has a first surface 2a and a second surface 2b. In FIG. 2, the lower surface is the first surface 2a and the upper surface is the second surface 2b. Note that while this disclosure shows an example in which the base 2 is disk-shaped, the shape of the base 2 is not limited to a disk shape and may be any shape.

As shown in Figure 4, the opening 3 is located on the second surface 2b of the base 2, and the multiple openings 5 are located on the first surface 2a of the base 2. The opening 3 and the multiple openings 5 are connected by a flow path 4.

For example, the opening 3 is located in the center of the second surface 2b of the base 2, as shown in Figure 2. Alternatively, multiple openings 5 may be located so as to be evenly distributed across the entire first surface 2a of the base 2, as shown in Figure 3.

Note that this disclosure has shown an example in which one opening 3, which is an inlet for a medium such as a process gas, is provided, and multiple openings 5, which are outlets for the medium, are provided, but this disclosure is not limited to this example. For example, multiple openings 3 may be provided, or one opening 5 may be provided.

As shown in FIG. 4, the flow path 4 has, in order from the side connected to the opening 3, an introduction path 4a, a widening path 4b, and multiple branch paths 4c. The introduction path 4a is, for example, a portion that extends from the opening 3 perpendicular to the second surface 2b.

The widened path 4b is, for example, a portion of the introduction path 4a that extends parallel to the first surface 2a from the end of the introduction path 4a on the first surface 2a side. The multiple branch paths 4c are, for example, portions that extend from the widened path 4b to each of the multiple openings 5. Note that the configuration of the flow path 4 in this disclosure is not limited to the example shown in Figure 4.

The base 2 according to the embodiment may be made of any material, such as resin, metal, or ceramic. However, if the base 2 is made of ceramic, it is superior to resin or metal in terms of mechanical strength, heat resistance, and corrosion resistance.

Here, ceramics refers to aluminum oxide ceramics, zirconium oxide ceramics, yttrium oxide ceramics, magnesium oxide ceramics, silicon nitride ceramics, aluminum nitride ceramics, silicon carbide ceramics, cordierite ceramics, mullite ceramics, etc.

For example, aluminum oxide ceramics are ceramics that contain 70% by mass or more of aluminum oxide out of 100% by mass of all components that make up the ceramic. The same applies to other ceramics.

The material of the target substrate can also be confirmed using the following method. First, the target substrate is measured using an X-ray diffraction device (XRD), and the obtained value of the diffraction angle 2θ is compared with the JCPDS card. Here, we will explain the example of when the presence of aluminum oxide in the target substrate is confirmed by XRD.

Next, quantitative analysis of aluminum (Al) is performed using an ICP optical emission spectrometer (ICP) or an X-ray fluorescence spectrometer (XRF). If the content of Al measured by ICP or XRF is converted into aluminum oxide (Al ₂ O ₃ ) content of 70 mass % or more, the target substrate is composed of aluminum oxide ceramics.

When the flow path structure 1 of the present disclosure has multiple openings 5 and the base 2 is made of ceramic, it can be suitably used as a shower plate for use in semiconductor manufacturing equipment 100 (see Figure 1), which requires corrosion resistance. Furthermore, the flow path structure 1 according to the embodiment causes little deterioration in the quality of the inflow gas, resulting in high quality of the processed object.

In this embodiment, as shown in Figure 3, multiple thermocouple sections 10 (two in the figure) are located inside the base 2. Each thermocouple section 10 is configured by connecting a first metal wiring 11 (see Figure 5) made of a first metal with a second metal wiring 12 (see Figure 5) made of a second metal different from the first metal, and has a thermocouple function.

In this embodiment, multiple thermocouple units 10 are positioned inside the base 2, allowing multiple temperature measurement points to be provided within the shower plate. This makes it possible to measure the temperature inside the shower plate as well as the temperature distribution within the shower plate.

Furthermore, in this embodiment, as shown in FIG. 3, multiple thermocouple sections 10 are located at positions that are different distances from the center of the first surface 2a. For example, in the example of FIG. 3, one thermocouple section 10 is located at the center of the first surface 2a, and another thermocouple section 10 is located at an end of the first surface 2a.

This makes it possible to measure the temperature distribution according to the spread of the medium ejected from the flow path structure 1.

Furthermore, in an embodiment, multiple thermocouple units 10 may be located at positions that are different distances from the opening 111 (see FIG. 1) of the chamber 110 (see FIG. 1). For example, in an embodiment, thermocouple units 10 may be located at a portion of the base 2 closer to the opening 111 and at a portion of the base 2 farther from the opening 111.

This makes it possible to measure both the temperature near the opening 111, where the temperature drops easily, and the temperature of areas away from the opening 111, where the temperature drops less easily. Therefore, according to this embodiment, the temperature distribution inside the chamber 110 can be measured with high accuracy.

Note that while the example in Figure 4 shows an example in which the widening path 4b is disk-shaped, the present disclosure is not limited to this example, and a support pillar may be provided within the widening path 4b.

<Thermocouple section>
Next, the configuration of the thermocouple section 10 according to the embodiment will be described with reference to Fig. 5 to Fig. 11. Fig. 5 is a front view showing an example of the configuration of the thermocouple section 10 according to the embodiment, and Fig. 6 is a cross-sectional view showing an example of the configuration of the thermocouple section 10 according to the embodiment. Fig. 6 is a cross-sectional view taken along line B-B in Fig. 5.

As shown in Figure 5, the thermocouple section 10 is configured at the location where a first metal wiring 11 made of a first metal and a second metal wiring 12 made of a second metal are in contact.

The first metal and second metal may contain, for example, W (tungsten) and Re (rhenium), and may be configured so that the ratios of W and Re differ from each other. This allows an electromotive force due to the Seebeck effect to be generated at the contact points between the first metal wiring 11 and the second metal wiring 12.

This alloy is not specified by industrial standards such as JIS as a material for forming the thermocouple portion 10, but because it has a melting point of over 3000°C, it can be fired simultaneously with the ceramic that makes up the base 2. Furthermore, because it has a large electromotive force, commercially available instruments used to measure the temperature of thermocouples can be used without modification.

Specifically, the first metal wiring 11 may be formed from an alloy with a volume ratio of W:Re = 94:6 to 97:3, and the second metal wiring 12 may be formed from an alloy with a volume ratio of W:Re = 73:27 to 76:24. By keeping the volume ratio of W to Re in the W-Re alloy that makes up the first metal wiring 11 and the second metal wiring 12 within the above range, highly accurate measurements can be easily achieved.

In this disclosure, the material of the first metal wiring 11 and the second metal wiring 12 is not limited to an alloy containing W and Re, but may also be an alloy containing Pt (platinum) and Rh (rhodium), an alloy containing Ni (nickel) and Cr (chromium), or an alloy specified in JIS C1602.

In this disclosure, the material for the first metal wiring 11 and the second metal wiring 12 may be an alloy that has a large electromotive force, different temperature coefficients of resistance, a high melting point that can withstand the firing temperature of the ceramic that makes up the base 2, and can be used in commercially available instruments, in order to improve measurement accuracy.

The manufacturing process for the substrate 2 including the first metal wiring 11 and the second metal wiring 12 begins with preparing a tape made from ceramics and containing a binder. If necessary, the shape may be processed using tools, molds, or lasers.

Next, a conductive paste that will become the first metal wiring 11 and the second metal wiring 12 is printed and filled onto the tape. The tape is then dried and laminated, and the flow path structure 1 is obtained by degreasing and firing under conditions appropriate for the tape material.

In the embodiment, by using this tape lamination method, the thermocouple part 10 can be easily formed inside the base 2. Also, in the embodiment, by forming the thermocouple part 10 inside the base 2 using printed conductive paste, calibration of the thermocouple part 10 can be eliminated even after long-term use.

As shown in FIG. 5, the first metal wiring 11 may have an enclosing portion 11a, a wiring portion 11b, and a via portion 11c (see FIG. 14). In the example of FIG. 5, the enclosing portion 11a is positioned so as to surround the branch path 4c. For example, as shown in FIGS. 5 and 6, the enclosing portion 11a may surround the entire periphery of the branch path 4c without interruption.

The wiring portion 11b is positioned so as to extend parallel to the first surface 2a of the base 2 (see Figure 6). The via portion 11c is positioned so as to extend perpendicular to the first surface 2a of the base 2.

The second metal wiring 12 also has an enclosing portion 12a, a wiring portion 12b, and a via portion 12c (see Figure 14). The enclosing portion 12a is positioned so as to surround the branch path 4c. The wiring portion 12b is positioned so as to extend parallel to the first surface 2a of the base 2.

Furthermore, as shown in FIG. 6, the wiring portion 12b is positioned so as to ride over the surrounding portion 11a of the first metal wiring 11. The via portion 12c is positioned so as to extend perpendicular to the first surface 2a of the base 2.

The surrounding portions 11a and 12a are positioned so as to concentrically surround the outside of the branch path 4c. Furthermore, the surrounding portions 11a and 12a are positioned so as to be in contact with each other. As a result, a circular thermocouple portion 10 is formed at the location where the surrounding portions 11a and 12a are in contact.

As described above, in this embodiment, as shown in FIG. 5, when the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 surround the periphery of the opening 5, and the thermocouple portion 10 is located around the periphery of the opening 5.

This allows the temperature of the branch path 4c and opening 5 through which the process gas is discharged to be measured with high accuracy.

In addition, in an embodiment, when the first surface 2a is viewed from the front, the thermocouple unit 10 may surround the opening 5. This allows for even more accurate measurement of the temperature near the branch path 4c through which the process gas is discharged and the opening 5.

Furthermore, in the embodiment, the cross-sectional shape of the thermocouple section 10 shown in FIG. 5 is not limited to the example in FIG. 6. FIGS. 7 and 8 are cross-sectional views showing an example of the configuration of the thermocouple section 10 according to the embodiment, and correspond to the above-mentioned FIG. 6. As shown in FIG. 7, in the embodiment, a portion of the surrounding portion 11a of the first metal wiring 11 may be cut out so that it is separated by the wiring portion 12b of the second metal wiring 12.

In addition, in an embodiment, as shown in FIG. 8, the first metal wiring 11 and the second metal wiring 12 may be positioned so as to be stacked inside the base 2. The thermocouple part 10 may then be formed by stacking the second metal wiring 12 so that the surrounding portion 12a of the second metal wiring 12 is in contact with the surrounding portion 11a of the first metal wiring 11.

In this way, when the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 are positioned overlapping in the thermocouple portion 10, thereby increasing the contact area between the surrounding portion 11a and the surrounding portion 12a.

This allows for even more accurate measurement of the temperature near the branch path 4c and opening 5 through which the process gas is discharged.

Furthermore, in the embodiment, the planar shape of the thermocouple section 10 is not limited to the example shown in FIG. 5. FIG. 9 is a front view showing another example of the configuration of the thermocouple section 10 according to the embodiment, and FIG. 10 is a cross-sectional view showing another example of the configuration of the thermocouple section 10 according to the embodiment. Also, FIG. 10 is a cross-sectional view taken along the arrows C-C shown in FIG. 9.

As shown in Figures 9 and 10, in an embodiment, the semicircular surrounding portion 11a and the semicircular surrounding portion 12a may be connected to each other to form a circle, so that the first metal wiring 11 and the second metal wiring 12 are positioned so as to surround the periphery of the opening 5 as a whole.

This also makes it possible to accurately measure the temperature near the branch path 4c and opening 5 through which the process gas is discharged.

In the present disclosure, as shown in Figure 9, even if the contact points (i.e., thermocouple portions 10) between the first metal wiring 11 and the second metal wiring 12 are located apart, they can be considered to be one thermocouple portion 10 if they are located at a distance of 1 cm or less and connected to the same first metal wiring 11 and second metal wiring 12.

Furthermore, in the embodiment, the cross-sectional shape of the thermocouple section 10 shown in FIG. 9 is not limited to the example shown in FIG. 10. FIG. 11 is a cross-sectional view showing another example of the configuration of the thermocouple section 10 according to the embodiment.

As shown in FIG. 11 , in an embodiment, the first metal wiring 11 and the second metal wiring 12 may be positioned so as to be stacked inside the base 2. The thermocouple section 10 may then be formed by stacking the second metal wiring 12 so that the surrounding portion 12a of the second metal wiring 12 is in contact with the surrounding portion 11a of the first metal wiring 11.

In this way, when the first surface 2a is viewed from the front, the first metal wiring 11 and the second metal wiring 12 are positioned overlapping in the thermocouple portion 10, thereby increasing the contact area between the surrounding portion 11a and the surrounding portion 12a.

This allows for even more accurate measurement of the temperature near the branch path 4c and opening 5 through which the process gas is discharged.

Furthermore, in an embodiment, the thermocouple section 10 may have a region containing the first metal and the second metal. That is, in an embodiment, the thermocouple section 10 may have a region in which the first metal and the second metal are mixed. This can improve the reliability of the thermocouple section 10.

<Modification 1>
Next, various modified examples of the embodiment will be described with reference to Fig. 12 to Fig. 18. Fig. 12 is a front view showing an example of the configuration of a flow path structure 1 according to a modified example 1 of the embodiment, and corresponds to Fig. 3 of the embodiment.

As shown in Figure 12, in variant 1, three or more thermocouple sections 10 (three in the figure) may be located inside the base 2. For example, in variant 1, one thermocouple section 10 is located at the center of the first surface 2a, another thermocouple section 10 is located at an end of the first surface 2a, and yet another thermocouple section 10 is located midway between the center and the end of the first surface 2a.

This allows for accurate measurement of the temperature distribution corresponding to the spread of the medium ejected from the flow path structure 1.

Also, in variant 1, three or more thermocouple units 10 may be positioned in a straight line. This makes it possible to grasp the temperature trend inside the chamber 110.

Note that while the example in Figure 12 shows an example in which three thermocouple sections 10 are located inside the base 2, the present disclosure is not limited to this example, and four or more thermocouple sections 10 may be located inside the base 2.

<Modification 2>
FIG. 13 is a cross-sectional view showing an example of the configuration of the flow path structure 1 according to the second modification of the embodiment, and corresponds to FIG. 4 of the embodiment.

As shown in Figure 13, in variant 2, the thermocouple unit 10 may be positioned around the inlet path 4a in addition to the branch path 4c. This allows temperature changes on the upstream and downstream sides of the flow path 4 to be measured.

In addition, in variant 2, multiple thermocouple units 10 located around the branch path 4c may be located at positions that are different distances from the first surface 2a. This makes it possible to measure temperature changes in the process gas upstream and downstream of the branch path 4c.

In addition, in variant 2, multiple thermocouple units 10 located around the branch path 4c may be positioned so that they overlap when the first surface 2a is viewed from the front. This allows the temperature change of the process gas to be measured on both the upstream and downstream sides of the same branch path 4c.

<Modification 3>
14 and 15 are front views showing an example of the configuration of the flow path structure 1 according to Modification 3 of the embodiment. Fig. 14 is a front view seen from the first surface 2a side of the base 2, and Fig. 15 is a front view seen from the second surface 2b side of the base 2.

As shown in Figures 14 and 15, in variant 3, multiple (three in the figure) thermocouple sections 10 are connected to one terminal 13 located on the second surface 2b via the wiring section 11b and via section 11c of a common first metal wiring 11.

On the other hand, in variant 3, multiple thermocouple sections 10 are each connected to multiple terminals 14 located on the second surface 2b via the wiring sections 12b and via sections 12c of individual second metal wiring sections 12.

In this way, by sharing at least one of the first metal wiring 11 and the second metal wiring 12, it is possible to reduce the number of terminals 13, 14, which would normally be required in total to twice the number of thermocouple parts 10. Therefore, according to variant 3, the manufacturing process for the flow path structure 1 can be simplified.

In addition, in the flow path structure 1 of variant example 3, the temperature of each thermocouple section 10 can be measured by switching the terminal 14 to be measured in a temperature measuring device (not shown).

Furthermore, while the examples in Figures 13 and 14 show an example in which the first metal wiring 11 is shared, the present disclosure is not limited to such an example, and the second metal wiring 12 may also be shared. In other words, either the first metal wiring 11 or the second metal wiring 12 may be shared.

Furthermore, while the examples in Figures 13 and 14 show examples in which the via portions 11c and 12c are located on the peripheral edge of the base 2, the present disclosure is not limited to such examples. For example, if support pillars are provided in the widening path 4b (see Figure 4), the via portions 11c and 12c may be located on such support pillars. This allows for greater design freedom for the first metal wiring 11 and the second metal wiring 12.

<Modification 4>
Fig. 16 is a front view showing an example of the configuration of the flow path structure 1 according to Modification 4 of the embodiment. As shown in Fig. 16 , in Modification 4, when the first surface 2a is viewed from the front, the thermocouple portion 10 may be located at a position farther from the center of the first surface 2a than the opening group 5A formed of the plurality of openings 5.

In this way, by positioning the thermocouple unit 10 outside the opening group 5A, it is possible to measure the temperature outside the opening group 5A, where the temperature is likely to drop during the process.

<Modification 5>
Fig. 17 is an enlarged cross-sectional view showing an example of the configuration of the flow path structure 1 according to Modification 5 of the embodiment. Fig. 17 is an enlarged cross-sectional view of a peripheral portion of the base 2. As shown in Fig. 17, in Modification 5, the RF electrode 20 is located inside the base 2 along the first surface 2a.

The RF electrode 20 is connected to a high-frequency power supply (not shown). By applying high-frequency power from the high-frequency power supply to the RF electrode 20, plasma can be generated inside the semiconductor manufacturing equipment 100 (see Figure 1).

In variant 5, as shown in FIG. 17, when the first surface 2a is viewed from the front, the thermocouple section 10 may be located farther from the center of the first surface 2a than the RF electrode 20.

In this way, by positioning the thermocouple portion 10 outside the RF electrode 20, it is possible to prevent the conductive thermocouple portion 10 from interfering with the transmission of high frequency waves toward the first surface 2a of the substrate 2 when generating plasma on the first surface 2a side of the substrate 2.

Therefore, according to variant 5, the semiconductor wafer W process can be stably carried out in the semiconductor manufacturing apparatus 100.

<Modification 6>
18 is an enlarged cross-sectional view showing an example of the configuration of the flow path structure 1 according to Modification 6 of the embodiment. As shown in Fig. 18, the thermocouple portion 10 may be located at a position farther from the first surface 2a than the RF electrode 20.

In this way, by positioning the thermocouple portion 10 farther away from the first surface 2a than the RF electrode 20, it is possible to prevent the conductive thermocouple portion 10 from interfering with the transmission of high frequency waves toward the first surface 2a of the substrate 2 when generating plasma on the first surface 2a side of the substrate 2.

Therefore, according to variant 6, the process for semiconductor wafers W in semiconductor manufacturing equipment 100 can be carried out stably.

The flow path structure 1 according to the embodiment includes a base 2, a flow path 4, multiple openings 5, first metal wiring 11, and second metal wiring 12. The base 2 has a first surface 2a and is made of ceramic. The flow path 4 is located inside the base 2 and has multiple branch paths 4c. The multiple openings 5 are located on the first surface 2a and are connected to the multiple branch paths 4c, respectively. At least a portion of the first metal wiring 11 is located inside the base 2 and is made of a first metal. At least a portion of the second metal wiring 12 is located inside the base 2 and is made of a second metal different from the first metal. The first metal wiring 11 and the second metal wiring 12 are connected inside the base 2 to form a thermocouple unit 10 that functions as a thermocouple. When the first surface 2a is viewed from the front, the thermocouple unit 10 is located farther from the center of the first surface 2a than the opening group 5A, which is made up of the multiple openings 5. This enables accurate estimation of process data during processing.

In addition, in the flow path structure 1 according to this embodiment, the base 2 further has an RF electrode 20 located therein. Furthermore, when the first surface 2a is viewed from the front, the thermocouple unit 10 is located at a position farther from the center of the first surface 2a than the RF electrode 20. This allows for accurate estimation of process data during the process, and also enables stable processing of the semiconductor wafer W in the semiconductor manufacturing apparatus 100.

Furthermore, in the flow path structure 1 according to the embodiment, the base 2 further has an RF electrode 20 located therein. The thermocouple unit 10 is located at a position farther from the first surface 2a than the RF electrode 20. This allows for accurate estimation of process data during the process, and also enables stable processing of the semiconductor wafer W in the semiconductor manufacturing apparatus 100.

The semiconductor manufacturing apparatus 100 according to the embodiment includes a chamber 110 and the flow path structure 1 described above. This allows processing of semiconductor wafers W while accurately estimating process data during the process.

Although the present invention has been described above with reference to an embodiment thereof, it is not limited to the above embodiment, and various modifications are possible without departing from the spirit of the invention. For example, the flow path structure 1 of the present disclosure may be provided with a heater inside the substrate 2. This allows the process gas flowing through the flow path 4 to be heated. The temperature of the heater can also be measured using the thermocouple unit 10. In the present invention, the use of the thermocouple unit 10 enables local temperature measurement, and the use of multiple thermocouple units 10 allows for precise measurement of the temperature distribution within the shower plate.

Additional advantages and other aspects may readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and equivalents thereof.

REFERENCE SIGNS LIST 1 Flow path structure 2 Base 2a First surface 3 Opening 4 Flow path 4a Inlet path 4b Widened path 4c Branch path 5 Opening 5A Opening group 10 Thermocouple part 11 First metal wiring 12 Second metal wiring 100 Semiconductor manufacturing apparatus 110 Chamber 111 Opening 120 Mounting table

Claims (4)

a substrate having a first surface and made of ceramic;
a flow path located inside the substrate and having a plurality of branch paths;
a plurality of openings located on the first surface and respectively connected to the plurality of branch paths;
a first metal wiring at least a portion of which is located inside the base and which is made of a first metal;
a second metal wiring at least a portion of which is located inside the base and which is made of a second metal different from the first metal;
Equipped with
the first metal wiring and the second metal wiring are connected inside the base to form a thermocouple portion having a thermocouple function;
When the first surface is viewed from the front, the thermocouple portion is located at a position farther from a center of the first surface than an opening group formed by the plurality of openings,
the substrate further having an RF electrode located therein;
When the first surface is viewed from the front, the thermocouple portion is located at a position farther from the center of the first surface than the RF electrode.
Flow path structure. a substrate having a first surface and made of ceramic;
a flow path located inside the substrate and having a plurality of branch paths;
a plurality of openings located on the first surface and respectively connected to the plurality of branch paths;
a first metal wiring at least a portion of which is located inside the base and which is made of a first metal;
a second metal wiring at least a portion of which is located inside the base and which is made of a second metal different from the first metal;
Equipped with
the first metal wiring and the second metal wiring are connected inside the base to form a thermocouple portion having a thermocouple function;
When the first surface is viewed from the front, the thermocouple portion is located at a position farther from a center of the first surface than an opening group formed by the plurality of openings,
the substrate further having an RF electrode located therein;
The thermocouple portion is located at a position farther from the first surface than the RF electrode.
Flow path structure. a substrate having a first surface and made of ceramic;
a flow path located inside the substrate and having a plurality of branch paths;
a plurality of openings located on the first surface and respectively connected to the plurality of branch paths;
a first metal wiring at least a portion of which is located inside the base and which is made of a first metal;
a second metal wiring at least a portion of which is located inside the base and which is made of a second metal different from the first metal;
Equipped with
the first metal wiring and the second metal wiring are connected inside the base to form a thermocouple portion having a thermocouple function;
When the first surface is viewed from the front, the thermocouple portion is located at a position farther from a center of the first surface than an opening group formed by the plurality of openings,
the substrate further having an RF electrode located therein;
When the first surface is viewed from the front, the thermocouple portion is located at a position farther from the center of the first surface than the RF electrode,
The thermocouple portion is located at a position farther from the first surface than the RF electrode.
Flow path structure. A mounting table;
a chamber;
The flow path structure according to any one of claims 1 to 3,
A semiconductor manufacturing device comprising: