JP7774472B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

The present invention relates to a substrate processing method and a substrate processing apparatus.

Single-wafer substrate processing apparatuses are known that process substrates by discharging a processing liquid onto the substrate. Single-wafer substrate processing apparatuses process substrates one by one using the processing liquid. For example, Patent Document 1 discloses a single-wafer substrate processing apparatus.

The substrate processing apparatus of Patent Document 1 includes an organic solvent valve that opens and closes an organic solvent pipe, and a hydrophobizing agent valve that opens and closes a hydrophobizing agent pipe. After a delay time has elapsed since the organic solvent valve began closing, the hydrophobizing agent valve begins opening while the discharge of IPA (isopropyl alcohol) from the organic solvent nozzle has not yet completely stopped. As a result, substrate processing can be transitioned from organic solvent processing to hydrophobizing agent processing without causing liquid shortage on the substrate, while suppressing or preventing the occurrence of liquid splashes caused by interference between the organic solvent and the hydrophobizing agent.

Japanese Patent Application Laid-Open No. 2019-192799

However, with the substrate processing apparatus of Patent Document 1, an operator must set the period (delay time) between the start of the closing operation of the organic solvent valve (leading valve) and the start of the opening operation of the hydrophobizing agent valve (following valve). This requires the operator to set the delay time every time the discharge flow rate of the processing liquid fluctuates. The discharge flow rate of the processing liquid fluctuates due to, for example, fluctuations in the power usage of the factory in which the substrate processing apparatus is installed. Thus, with the substrate processing apparatus of Patent Document 1, the operator must set the delay time even after the substrate processing apparatus is installed. Therefore, considering the burden on operators, there is room for further improvement.

The present invention was made in consideration of the above-mentioned problems, and its purpose is to provide a substrate processing method and substrate processing apparatus that can reduce the burden on workers.

According to one aspect of the present invention, a substrate processing method for processing a substrate with a processing liquid includes the steps of: holding the substrate; starting the supply of a preceding processing liquid to a leading nozzle and ejecting the preceding processing liquid from the outlet of the leading nozzle toward the held substrate; starting the supply of a trailing processing liquid to a trailing nozzle and ejecting the trailing processing liquid from the outlet of the trailing nozzle toward the held substrate; detecting the start of ejection of the trailing processing liquid from the outlet of the trailing nozzle; and stopping the supply of the preceding processing liquid to the leading nozzle in response to detection of the start of ejection of the trailing processing liquid.

In one embodiment, the detection step detects that the subsequent treatment liquid has been ejected from the ejection port of the subsequent nozzle.

In one embodiment, the detection step detects that the subsequent treatment liquid has reached the discharge port of the subsequent nozzle.

In one embodiment, the detection step detects that the subsequent treatment liquid has reached the vicinity of the ejection port of the subsequent nozzle.

In one embodiment, in the detection step, the start of ejection of the subsequent treatment liquid is detected by an imaging device.

In one embodiment, in the detection step, the start of ejection of the subsequent treatment liquid is detected by a photosensor.

In one embodiment, in the detection step, the start of ejection of the subsequent treatment liquid is detected by a capacitance sensor.

In one embodiment, in the stopping step, the supply of the preceding processing liquid to the preceding nozzle is stopped a predetermined time after the start of ejection of the following processing liquid is detected.

In one embodiment, the substrate processing method further includes a step of adjusting the timing for starting the supply of the preceding processing liquid based on a supply time indicating the time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid in the stopping step, and a predetermined time that determines the time interval for supplying the preceding processing liquid.

In one embodiment, the substrate processing method further includes a step of acquiring the timing for stopping the supply of the preceding processing liquid.

In one embodiment, the substrate processing method further includes a step of detecting the start of ejection of the preceding processing liquid from the ejection port of the preceding nozzle.

According to one aspect of the present invention, a substrate processing apparatus processes a substrate with a processing liquid and includes a substrate holding unit, a leading nozzle, a leading valve, a trailing nozzle, a trailing valve, a detection unit, and a control unit. The substrate holding unit holds the substrate. The leading nozzle has a discharge port and discharges the leading processing liquid from the discharge port toward the substrate held by the substrate holding unit. The leading valve controls the supply of the leading processing liquid to the leading nozzle and the stop of the supply of the leading processing liquid to the leading nozzle. The trailing nozzle has a discharge port and discharges the trailing processing liquid from the discharge port toward the substrate held by the substrate holding unit. The trailing valve controls the supply of the trailing processing liquid to the trailing nozzle and the stop of the supply of the trailing processing liquid to the trailing nozzle. The detection unit detects the start of discharge of the trailing processing liquid from the discharge port of the trailing nozzle. The control unit controls the leading valve to start supplying the leading processing liquid to the leading nozzle, and then controls the trailing valve to start supplying the trailing processing liquid to the trailing nozzle. When the detection unit detects the start of ejection of the trailing processing liquid, the control unit executes a closing operation control process to control the leading valve to stop supplying the leading processing liquid.

In one embodiment, the detection unit detects that the subsequent treatment liquid has been ejected from the ejection port of the subsequent nozzle.

In one embodiment, the detection unit detects that the trailing treatment liquid has reached the ejection outlet of the trailing nozzle.

In one embodiment, the detection unit detects that the trailing treatment liquid has reached the vicinity of the ejection port of the trailing nozzle.

In one embodiment, the detection unit includes an imaging device that detects the start of ejection of the subsequent treatment liquid.

In one embodiment, the detection unit includes a photosensor that detects the start of ejection of the subsequent treatment liquid.

In one embodiment, the detection unit includes a capacitance sensor that detects the start of ejection of the subsequent treatment liquid.

In one embodiment, the control unit controls the leading valve to stop the supply of the leading treatment liquid after a predetermined time has elapsed since the detection unit detected the start of the discharge of the trailing treatment liquid.

In one embodiment, the control unit adjusts the timing for starting the supply of the preceding treatment liquid based on a supply time indicating the time interval from the start of supply of the preceding treatment liquid to the stop of supply of the preceding treatment liquid due to the closing operation control process, and a predetermined time that determines the time interval for supplying the preceding treatment liquid.

In one embodiment, the control unit acquires the timing for stopping the supply of the preceding treatment liquid.

In one embodiment, the detection unit detects the start of ejection of the preceding treatment liquid from the ejection port of the preceding nozzle.

In one embodiment, the substrate processing apparatus further includes a plurality of processing chambers. Each of the plurality of storage chambers accommodates the substrate holder, the leading nozzle, and the trailing nozzle. The control unit executes the closing operation control process for each of the processing chambers.

The substrate processing method and substrate processing apparatus according to the present invention can reduce the burden on workers.

1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention; 1 is a plan view schematically showing a configuration of a processing section included in a substrate processing apparatus according to a first embodiment of the present invention. 1 is a diagram schematically illustrating a configuration of a substrate processing apparatus according to a first embodiment of the present invention. 3 is a diagram showing an imaging range of an imaging device included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. FIG. 10 is a diagram showing a captured image when the first chemical liquid is being discharged from the first discharge port. FIG. 10 is a diagram showing an image captured when the discharge of the first rinse liquid from the second discharge port starts. 1 is a flowchart showing a substrate processing method according to a first embodiment of the present invention. 1 is a flowchart showing a flow of substrate processing. 1 is a flowchart showing a flow of substrate processing. 1 is a flowchart showing a flow of substrate processing. 1 is a flowchart showing a flow of substrate processing. 10 is a timing chart showing the opening and closing operations of the first to fourth valves and the detection operation by the imaging device. FIG. 10 is a block diagram showing a part of the configuration of a substrate processing apparatus according to a second embodiment of the present invention. 10 is a flowchart showing a substrate processing method according to a second embodiment of the present invention. 1 is a flowchart showing a flow of substrate processing. FIG. 10 is a block diagram showing a part of the configuration of a substrate processing apparatus according to a third embodiment of the present invention. FIG. 4 is a diagram showing an input screen displayed on a display unit. 1 is a flowchart showing a flow of substrate processing. 1 is a flowchart showing a flow of substrate processing. 10 is a timing chart showing the opening and closing operations of the first to fourth valves and the detection operation by the imaging device. 1 is a flowchart showing a flow of substrate processing. 6 is a timing chart showing the opening and closing operations of the first valve and the second valve, and the detection operation by the imaging device. FIG. 10 is a diagram showing a first modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. FIG. 10 is a diagram showing a second modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. FIG. 10 is a diagram showing a third modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. FIG. 10 is a diagram showing a fourth modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. FIG. 10 is a diagram showing a fifth modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. FIG. 10 is a diagram showing a fifth modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention.

Embodiments of the substrate processing method and substrate processing apparatus of the present invention will be described below with reference to the drawings (Figs. 1 to 28). However, the present invention is not limited to the following embodiments, and can be implemented in various forms without departing from the spirit of the invention. Note that duplicated descriptions may be omitted where appropriate. Furthermore, identical or equivalent parts in the drawings will be designated by the same reference numerals, and descriptions will not be repeated.

The "substrates" that are the subject of substrate processing in the substrate processing method and substrate processing apparatus of the present invention can be various types of substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. The following description of an embodiment of the present invention will primarily focus on the case where a disk-shaped semiconductor wafer is the subject of substrate processing, but the substrate processing method and substrate processing apparatus of the present invention can be similarly applied to various types of substrates other than the semiconductor wafers mentioned above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing method and substrate processing apparatus of the present invention can be applied to substrates of various shapes.

[Embodiment 1]
A first embodiment of the present invention will be described below with reference to FIGS. 1 to 12. First, a substrate processing apparatus 100 according to this embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. More specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes substrates W with a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus, and processes substrates W one by one. Hereinafter, processing substrates W may be referred to as "substrate processing."

As shown in FIG. 1, the substrate processing apparatus 100 includes multiple processing sections 1, a fluid cabinet 100A, multiple fluid boxes 100B, multiple load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

Each load port LP accommodates multiple stacked substrates W. For example, a load port LP accommodates multiple patterned wafers. A patterned wafer is a substrate (wafer) with a fine pattern formed on its surface, consisting of grooves and stacked structures. The stacked structures have a structure in which silicon nitride films and silicon oxide films are alternately stacked in the thickness direction of the stacked structure.

The indexer robot IR transports substrates W between the load port LP and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the treating section 1. Note that a placement stage (path) on which substrates W are temporarily placed may be provided between the indexer robot IR and the center robot CR, allowing substrates W to be transferred indirectly between the indexer robot IR and the center robot CR via the placement stage.

The multiple processing units 1 form multiple towers TW (four towers TW in Figure 1). The multiple towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes multiple processing units 1 (three processing units 1 in Figure 1) stacked one above the other.

The fluid cabinet 100A contains processing liquid. Each fluid box 100B corresponds to one of the multiple towers TW. The processing liquid in the fluid cabinet 100A is supplied to all processing units 1 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.

Each processing unit 1 supplies a processing liquid to the upper surface of the substrate W. The processing liquid includes a chemical liquid and a rinse liquid. In this embodiment, the chemical liquid includes a first chemical liquid and a second chemical liquid. The rinse liquid includes a first rinse liquid and a second rinse liquid.

The first chemical liquid is, for example, DHF (diluted hydrofluoric acid). DHF is diluted hydrofluoric acid. DHF removes native oxide films from the substrate W.

The second chemical liquid is, for example, SC1. SC1 is a mixed liquid containing " _NH4OH ,"" _H2O2 , _" and " _H2O ." When SC1 is supplied to the upper surface of the substrate W, particles adhering to the upper surface of the substrate W are removed. More specifically, SC1 is used to dissolve and remove organic matter and to peel and remove insoluble particles.

The rinse liquid may be, for example, ultrapure water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of approximately 10 ppm to 100 ppm). Ultrapure water may be, for example, deionized water. In this embodiment, the first rinse liquid and the second rinse liquid are the same type of rinse liquid.

The processing unit 1 supplies the first chemical liquid, the second chemical liquid, the first rinse liquid, and the second rinse liquid to the substrate W in the following order: first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid, second rinse liquid. For example, the processing unit 1 may supply DHF, SC1, the first rinse liquid (deionized water), and the second rinse liquid (deionized water) to the substrate W in the following order: DHF, first rinse liquid (deionized water), second rinse liquid (deionized water), SC1, second rinse liquid (deionized water).

Next, the control device 101 will be described. The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a memory unit 103.

The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the memory unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 102 may have a general-purpose computing device or a dedicated computing device.

The memory unit 103 stores various types of information for controlling the operation of the substrate processing apparatus 100. For example, the memory unit 103 stores data and computer programs. The various types of information (data) include recipe data. The recipe data indicates a recipe that defines the processing content and processing procedure for the substrate W. The recipe sets the conditions (setting values) for executing substrate processing.

The storage unit 103 includes a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media.

Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Figures 1 and 2. Figure 2 is a plan view schematically showing the configuration of the processing section 1 included in the substrate processing apparatus 100 of this embodiment.

As shown in FIG. 2, the processing unit 1 has a processing chamber 2, a substrate holding unit 3, a first nozzle 41 to a fourth nozzle 44, a first nozzle movement mechanism 5, a second nozzle movement mechanism 6, a liquid receiving unit 9, an imaging device 110, and an illumination device 111. The substrate holding unit 3, the first nozzle 41 to the fourth nozzle 44, the first nozzle movement mechanism 5, the second nozzle movement mechanism 6, the liquid receiving unit 9, the imaging device 110, and the illumination device 111 are provided for each processing chamber 2. The imaging device 110 is an example of a "detection unit."

The substrate W is loaded into the processing chamber 2 and processed therein. The processing chamber 2 has a roughly box shape. The processing chamber 2 houses the substrate holder 3, the first nozzle 41 to the fourth nozzle 44, part of the first nozzle movement mechanism 5, part of the second nozzle movement mechanism 6, and the liquid receiving part 9. The processing chamber 2 is, for example, a chamber.

The substrate holder 3 holds the substrate W. The operation of the substrate holder 3 is controlled by the control device 101 (control unit 102). More specifically, the substrate holder 3 holds the substrate W in a horizontal position. The substrate holder 3 is, for example, a spin chuck. The substrate holder 3 may have a spin base 31 and multiple chuck members 32 (four chuck members 32 in Figure 2).

The spin base 31 is substantially disk-shaped and supports multiple chuck members 32 in a horizontal position. The multiple chuck members 32 are arranged on the periphery of the spin base 31. The multiple chuck members 32 clamp the periphery of the substrate W. The multiple chuck members 32 hold the substrate W in a horizontal position. The operation of the multiple chuck members 32 is controlled by the control device 101 (control unit 102). The multiple chuck members 32 are arranged so that the center of the substrate W coincides with the center CP1 of the spin base 31.

As will be described later with reference to Figure 3, the spin base 31 rotates around the center CP1 of the spin base 31. Therefore, the substrate W rotates around the center of the substrate W.

Next, we will explain the first nozzle 41, second nozzle 42, and first nozzle movement mechanism 5.

The first nozzle 41 ejects a first chemical liquid (e.g., DHF) toward the top surface of the substrate W held by the substrate holder 3. As a result, the first chemical liquid is supplied to the substrate W, and a liquid film of the first chemical liquid is formed on the top surface of the substrate W. Specifically, the first chemical liquid is ejected from the tip of the first nozzle 41. The first chemical liquid is also ejected from the first nozzle 41 toward the rotating substrate W.

The second nozzle 42 ejects a first rinse liquid (e.g., deionized water) toward the upper surface of the substrate W held by the substrate holder 3. As a result, the first rinse liquid is supplied to the substrate W, and a liquid film of the first rinse liquid is formed on the upper surface of the substrate W. Specifically, the first rinse liquid is ejected from the tip of the second nozzle 42. The first rinse liquid is also ejected from the second nozzle 42 toward the rotating substrate W.

The first nozzle movement mechanism 5 simultaneously moves the first nozzle 41 and the second nozzle 42. The operation of the first nozzle movement mechanism 5 is controlled by the control device 101 (control unit 102). More specifically, the first nozzle movement mechanism 5 moves the first nozzle 41 and the second nozzle 42 between the first retraction area and the processing position. The first retraction area is an area outside the substrate holder 3. More specifically, the first retraction area is an area outside the liquid receiving unit 9. Figure 2 shows the first nozzle 41 and the second nozzle 42 positioned in the first retraction area. In this embodiment, the processing positions of the first nozzle 41 and the second nozzle 42 are both positions facing the center of the substrate W. Both the first nozzle 41 and the second nozzle 42 eject processing liquid from above the substrate W toward the substrate W.

The first nozzle movement mechanism 5 may have a first nozzle arm 51, a second nozzle arm 52, a first nozzle base 53, and a first nozzle movement unit 54. The first nozzle base 53 extends vertically. The base ends of the first nozzle arm 51 and the second nozzle arm 52 are connected to the first nozzle base 53. The first nozzle arm 51 and the second nozzle arm 52 extend horizontally from the first nozzle base 53. In this embodiment, the first nozzle arm 51 and the second nozzle arm 52 are disposed adjacent to each other in the horizontal plane and extend parallel to each other.

The first nozzle arm 51 supports the first nozzle 41. The first nozzle 41 protrudes vertically downward from the first nozzle arm 51. Similarly, the second nozzle arm 52 supports the second nozzle 42. The second nozzle 42 protrudes vertically downward from the second nozzle arm 52. The first nozzle 41 may be positioned at the tip of the first nozzle arm 51. Similarly, the second nozzle 42 may be positioned at the tip of the second nozzle arm 52.

The first nozzle moving unit 54 rotates the first nozzle base 53 around the center CP2 of the first nozzle base 53. As a result, the first nozzle arm 51 and the second nozzle arm 52 rotate around the center CP2 of the first nozzle base 53, and the first nozzle 41 and the second nozzle 42 move in the circumferential direction around the center CP2 of the first nozzle base 53. The first nozzle moving unit 54 is controlled by the control device 101 (control unit 102). The first nozzle moving unit 54 includes, for example, a stepping motor. Alternatively, the first nozzle moving unit 54 may include a motor and a reducer.

Here, the operation of the first nozzle movement mechanism 5 will be described. The first nozzle movement mechanism 5 first moves the first nozzle 41 to the processing position. At this time, the second nozzle 42 moves in synchronization with the first nozzle 41. More specifically, the second nozzle 42 moves to the standby position. Here, the standby position is a position adjacent to the processing position in the horizontal plane. Therefore, the standby position is a position above the substrate W.

The first nozzle 41 supplies the first chemical liquid to the substrate W from the processing position. After the first nozzle 41 stops supplying the first chemical liquid, the first nozzle movement mechanism 5 moves the second nozzle 42 from the standby position to the processing position. At this time, the first nozzle 41 moves in synchronization with the second nozzle 42. The second nozzle 42 mainly supplies the first rinse liquid from the processing position to the substrate W. In this embodiment, the second nozzle 42 begins ejecting the first rinse liquid when it is positioned at the standby position. Therefore, the second nozzle 42 continues to supply the first rinse liquid to the substrate W while moving from the standby position to the processing position.

Next, we will explain the third nozzle 43, fourth nozzle 44, and second nozzle movement mechanism 6.

The third nozzle 43 is a fixed nozzle that sprays a second rinse liquid (e.g., deionized water) from a fixed position toward the top surface of the substrate W held by the substrate holder 3. As a result, the second rinse liquid is supplied to the substrate W. Specifically, the second rinse liquid is sprayed from the tip of the third nozzle 43. The third nozzle 43 is also positioned outside the liquid receiver 9, and sprays the second rinse liquid from outside the liquid receiver 9 toward the center of the rotating substrate W.

The fourth nozzle 44 ejects a second chemical liquid (e.g., SC1) toward the top surface of the substrate W held by the substrate holder 3. As a result, the second chemical liquid is supplied to the substrate W. Specifically, the second chemical liquid is ejected from the tip of the fourth nozzle 44. The second chemical liquid is also ejected from the fourth nozzle 44 toward the rotating substrate W.

The second nozzle movement mechanism 6 moves the fourth nozzle 44 between the second evacuation area and the processing position. The operation of the second nozzle movement mechanism 6 is controlled by the control device 101 (control unit 102). Like the first evacuation area, the second evacuation area is an area outside the liquid receiving unit 9. Figure 2 shows the fourth nozzle 44 positioned in the second evacuation area. The processing position of the fourth nozzle 44 is a position facing the center of the substrate W, like the processing positions of the first nozzle 41 and the second nozzle 42.

The second nozzle movement mechanism 6 may have a third nozzle arm 61, a second nozzle base 62, and a second nozzle movement unit 63. The second nozzle base 62 extends vertically. The base end of the third nozzle arm 61 is connected to the second nozzle base 62. The third nozzle arm 61 extends horizontally from the second nozzle base 62.

The third nozzle arm 61 supports the fourth nozzle 44. The fourth nozzle 44 protrudes vertically downward from the third nozzle arm 61. The fourth nozzle 44 may be positioned at the tip of the third nozzle arm 61.

The second nozzle moving unit 63 rotates the second nozzle base 62 around the center CP3 of the second nozzle base 62. As a result, the third nozzle arm 61 rotates around the center CP3 of the second nozzle base 62, and the fourth nozzle 44 moves in the circumferential direction around the center CP3 of the second nozzle base 62. The second nozzle moving unit 63 is controlled by the control device 101 (control unit 102). The second nozzle moving unit 63 includes, for example, a stepping motor. Alternatively, the second nozzle moving unit 63 may include a motor and a reducer.

After the supply of the first rinse liquid by the second nozzle 42 stops and the first nozzle 41 and second nozzle 42 move to the first evacuation area, the second nozzle movement mechanism 6 moves the fourth nozzle 44 from the second evacuation area to the processing position. The fourth nozzle 44 supplies the second chemical liquid to the substrate W from the processing position.

Next, the liquid receiving portion 9 will be described. The liquid receiving portion 9 surrounds the periphery of the substrate holder 3 and receives the processing liquid discharged from the substrate W. The liquid receiving portion 9 is, for example, a cup or a guard.

Next, the imaging device 110 will be described. The imaging device 110 has, for example, an imaging element, an electronic shutter, and an optical system. The imaging element may be, for example, a CCD (Charge Coupled Device). The optical system includes, for example, a lens. The imaging device 110 captures an image of the inside of the processing chamber 2 and generates a captured image SG. The imaging device 110 outputs the captured image SG to the control device 101. Specifically, the imaging device 110 outputs the captured image SG to the control unit 102. The operation of the imaging device 110 is controlled by the control device 101 (control unit 102).

In this embodiment, the imaging device 110 is disposed outside the processing chamber 2. The processing chamber 2 has a sidewall 2a facing the imaging device 110, and the sidewall 2a is provided with a window facing the imaging device 110. The imaging device 110 captures images of the inside of the processing chamber 2 through the window in the sidewall 2a. The window transmits light. For example, the window transmits visible light.

The imaging device 110 captures an image of the inside of the processing chamber 2 and detects the start of the discharge of the first rinse liquid from the second nozzle 42. Similarly, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects the start of the discharge of the second rinse liquid from the third nozzle 43 and the start of the discharge of the second chemical liquid from the fourth nozzle 44. In this embodiment, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects that the first rinse liquid has been discharged from the tip of the second nozzle 42. Similarly, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects that the second rinse liquid has been discharged from the tip of the third nozzle 43. Furthermore, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects that the second chemical liquid has been discharged from the tip of the fourth nozzle 44.

The control device 101 (control unit 102) acquires the timing at which the second nozzle 42 starts discharging the first rinse liquid based on the captured image SG input from the imaging device 110. Similarly, the control device 101 (control unit 102) acquires the timing at which the third nozzle 43 starts discharging the second rinse liquid and the timing at which the fourth nozzle 44 starts discharging the second chemical liquid based on the captured image SG input from the imaging device 110. In this embodiment, the timing at which the first rinse liquid starts discharging indicates the timing at which the first rinse liquid is discharged from the tip of the second nozzle 42. Similarly, the timing at which the second rinse liquid starts discharging indicates the timing at which the second rinse liquid is discharged from the tip of the third nozzle 43, and the timing at which the second chemical liquid starts discharging indicates the timing at which the second chemical liquid is discharged from the tip of the fourth nozzle 44.

Next, the lighting device 111 will be described. The lighting device 111 emits light into the processing chamber 2. The operation of the lighting device 111 is controlled by the control device 101 (control unit 102). By emitting light into the processing chamber 2, it becomes easier to detect the start of ejection of the first rinse liquid, the second rinse liquid, and the second chemical liquid. The lighting device 111 emits light when substrate processing is being performed. For example, the lighting device 111 may emit light only when the imaging device 110 is performing an imaging operation.

More specifically, the imaging device 110 captures images of the interior of the processing chamber 2 at a predetermined frame rate (e.g., 60 frames per second). As a result, each frame of the captured image SG is sequentially input to the control unit 102. The pixel values of each frame change in response to changes in brightness. The brightness value changes depending on whether or not the processing liquid is captured in the captured image SG. The control unit 102 acquires the ejection start timing of the first rinse liquid, the second rinse liquid, and the second chemical liquid based on the pixel values of each frame of the captured image SG. According to this embodiment, irradiating light into the processing chamber 2 increases the amount of change in brightness, which varies depending on whether or not the processing liquid is captured in the captured image SG. Therefore, irradiating light into the processing chamber 2 makes it easier to detect the ejection start timing of the first rinse liquid, the second rinse liquid, and the second chemical liquid.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a diagram schematically illustrating the configuration of the substrate processing apparatus 100 of this embodiment. In detail, Figure 3 includes a cross-section schematically illustrating the configuration of the processing section 1 included in the substrate processing apparatus 100. Note that, for ease of understanding, in Figure 3, the fourth nozzle 44 and second nozzle movement mechanism 6 are depicted above the first nozzle 41, second nozzle 42, and first nozzle movement mechanism 5.

As shown in FIG. 3, the substrate processing apparatus 100 further includes a substrate rotation unit 7, first liquid supply pipes 81 to 84, first valves VA1 to VA4, and first suck-back valves SB1 to SB4. The substrate rotation unit 7, first liquid supply pipes 81 to 84, first valves VA1 to VA4, and first suck-back valves SB1 to SB4 are provided for each processing chamber 2. In this embodiment, the first valves VA1 to VA4 are open/close valves.

The processing chamber 2 further accommodates the substrate rotation unit 7 and portions of the first to fourth liquid supply pipes 81 to 84. The first to fourth valves VA1 to VA4 and the first to fourth suck-back valves SB1 to SB4 are disposed outside the processing chamber 2. Specifically, the first to fourth valves VA1 to VA4 and the first to fourth suck-back valves SB1 to SB4 are accommodated within the fluid box 100B described with reference to FIG. 1.

The substrate rotation unit 7 rotates the substrate W and the substrate holder 3 together around a first rotation axis AX1. The operation of the substrate rotation unit 7 is controlled by the control device 101 (control unit 102). The first rotation axis AX1 extends vertically and passes through the center CP1 of the spin base 31 shown in Figure 2.

More specifically, the substrate rotation unit 7 rotates the spin base 31 around the first rotation axis AX1. Therefore, the spin base 31 rotates around the first rotation axis AX1. As a result, the substrate W held by the substrate holder 3 rotates around the first rotation axis AX1.

The substrate rotation unit 7 has, for example, a motor body 71 and a shaft 72. The shaft 72 is coupled to the spin base 31. The motor body 71 rotates the shaft 72, which in turn rotates the spin base 31. The operation of the motor body 71 is controlled by the control device 101 (control unit 102).

Next, the first nozzle movement mechanism 5 will be described. The first nozzle movement unit 54 described with reference to Figure 2 rotates the first nozzle base 53 around the second rotation axis AX2. As a result, the first nozzle 41 and second nozzle 42 move around the first nozzle base 53 in the circumferential direction centered on the second rotation axis AX2. The second rotation axis AX2 extends vertically and passes through the center CP2 of the first nozzle base 53 shown in Figure 2.

Next, the second nozzle movement mechanism 6 will be described. The second nozzle movement unit 63 described with reference to Figure 2 rotates the second nozzle base 62 around the third rotation axis AX3. As a result, the fourth nozzle 44 moves around the second nozzle base 62 in the circumferential direction centered on the third rotation axis AX3. The third rotation axis AX3 extends vertically and passes through the center CP3 of the second nozzle base 62 shown in Figure 2.

Next, we will explain the first nozzle 41 to the fourth nozzle 44, the first liquid supply pipe 81 to the fourth liquid supply pipe 84, and the first valve VA1 to the fourth valve VA4.

The first liquid supply pipe 81 connects to the first nozzle 41. The first liquid supply pipe 81 is a tubular member that supplies the first chemical liquid to the first nozzle 41. As shown in FIG. 3, the first nozzle 41 has a first outlet 41a. The first outlet 41a is formed at the tip of the first nozzle 41. The first chemical liquid supplied from the first liquid supply pipe 81 to the first nozzle 41 is ejected from the first outlet 41a.

The first valve VA1 is provided on the first liquid supply pipe 81. The first valve VA1 controls the supply of the first chemical liquid to the first nozzle 41 and the stop of the supply of the first chemical liquid to the first nozzle 41.

Specifically, the first valve VA1 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the first valve VA1. When the first valve VA1 is open, the first chemical liquid flows through the first liquid supply pipe 81 to the first nozzle 41. As a result, the first chemical liquid is ejected from the first outlet 41a. On the other hand, when the first valve VA1 is closed, the flow of the first chemical liquid through the first liquid supply pipe 81 stops.

The second liquid supply pipe 82 connects to the second nozzle 42. The second liquid supply pipe 82 is a tubular member and supplies the first rinse liquid to the second nozzle 42. As shown in FIG. 3, the second nozzle 42 has a second discharge port 42a. The second discharge port 42a is formed at the tip of the second nozzle 42. The first rinse liquid supplied from the second liquid supply pipe 82 to the second nozzle 42 is discharged from the second discharge port 42a. The center-to-center distance between the first discharge port 41a and the second discharge port 42a is, for example, 20 mm.

The second valve VA2 is provided on the second liquid supply pipe 82. The second valve VA2 controls the supply of the first rinse liquid to the second nozzle 42 and the stop of the supply of the first rinse liquid to the second nozzle 42. The configuration of the second valve VA2 is similar to that of the first valve VA1, so a detailed description thereof will be omitted.

The third liquid supply pipe 83 connects to the third nozzle 43. The third liquid supply pipe 83 is a tubular member and supplies the second rinse liquid to the third nozzle 43. As shown in FIG. 3, the third nozzle 43 has a third outlet 43a. The third outlet 43a is formed at the tip of the third nozzle 43. The second rinse liquid supplied from the third liquid supply pipe 83 to the third nozzle 43 is ejected from the third outlet 43a.

The third valve VA3 is provided on the third liquid supply pipe 83. The third valve VA3 controls the supply of the second rinse liquid to the third nozzle 43 and the stop of the supply of the second rinse liquid to the third nozzle 43. The configuration of the third valve VA3 is similar to that of the first valve VA1, so a detailed description thereof will be omitted.

The fourth liquid supply pipe 84 connects to the fourth nozzle 44. The fourth liquid supply pipe 84 is a tubular member and supplies the second chemical liquid to the fourth nozzle 44. As shown in FIG. 3, the fourth nozzle 44 has a fourth outlet 44a. The fourth outlet 44a is formed at the tip of the fourth nozzle 44. The second chemical liquid supplied from the fourth liquid supply pipe 84 to the fourth nozzle 44 is ejected from the fourth outlet 44a.

The fourth valve VA4 is provided on the fourth liquid supply pipe 84. The fourth valve VA4 controls the supply of the second chemical liquid to the fourth nozzle 44 and the stop of the supply of the second chemical liquid to the fourth nozzle 44. The configuration of the fourth valve VA4 is similar to that of the first valve VA1, so a detailed description thereof will be omitted.

Next, the first suckback valve SB1 to the fourth suckback valve SB4 will be described. The first suckback valve SB1 to the fourth suckback valve SB4 are provided on the first liquid supply pipe 81 to the fourth liquid supply pipe 84, respectively. More specifically, the first suckback valve SB1 to the fourth suckback valve SB4 are provided downstream of the first valve VA1 to the fourth valve VA4, respectively.

When the first nozzle 41 stops discharging the first chemical liquid, the first suck-back valve SB1 sucks in the first chemical liquid from the first liquid supply pipe 81, thereby drawing the first chemical liquid from the first discharge port 41a into the first liquid supply pipe 81. As a result, when discharging of the first chemical liquid stops, the first chemical liquid is less likely to fall from the first discharge port 41a in the form of relatively large clumps (droplets). In other words, "dripping" is less likely to occur. The operation of the first suck-back valve SB1 is controlled by the control device 101 (control unit 102).

The configurations of the second suck-back valve SB2 to the fourth suck-back valve SB4 are similar to that of the first suck-back valve SB1, so detailed explanations will be omitted.

Next, the imaging range SH of the imaging device 110 will be described with reference to Figures 1 to 4. Figure 4 is a diagram showing the imaging range SH of the imaging device 110 included in the substrate processing apparatus 100 of this embodiment. Note that, for ease of understanding, Figure 4 only shows the first nozzle 41, second nozzle 42, third nozzle 43, part of the first liquid supply pipe 81, second liquid supply pipe 82, and part of the third liquid supply pipe 83 out of the components within the processing chamber 2.

As shown in FIG. 4 , the imaging range SH of the imaging device 110 includes a range in which the tip (second outlet 42a) of the second nozzle 42 located in the standby position, the first rinse liquid ejected from that tip (second outlet 42a), and the tip (third outlet 43a) of the third nozzle 43, and the second rinse liquid ejected from that tip (third outlet 43a) can be captured. In this embodiment, the imaging range SH of the imaging device 110 further includes a range in which the tip (first outlet 41a) of the first nozzle 41 located in the processing position, and the first chemical liquid ejected from that tip (first outlet 41a) can be captured. Therefore, the imaging device 110 can detect the start of ejection of the first rinse liquid and the start of ejection of the second rinse liquid.

The imaging device 110 captures an image of the imaging range SH and generates a captured image SG. The captured image SG is input to the control device 101 (control unit 102). Therefore, the control unit 102 can obtain the ejection start timing of the first rinse liquid and the ejection start timing of the second rinse liquid.

When the first nozzle 41 and the second nozzle 42 are located in the first evacuation area described with reference to FIG. 2 and the fourth nozzle 44 is located at the processing position, the imaging range SH of the imaging device 110 includes a range in which the tip (fourth outlet 44a) of the fourth nozzle 44 located at the processing position and the second chemical liquid being ejected from that tip (fourth outlet 44a) can be imaged. Therefore, the imaging device 110 can detect the start of ejection of the second chemical liquid. Furthermore, the control unit 102 can obtain the ejection start timing of the second chemical liquid.

Next, the processing executed by the control unit 102 will be described with reference to FIGS. 1 to 6. FIG. 5 is a diagram showing a captured image SG when the first chemical liquid is being discharged from the first discharge port 41a. FIG. 6 is a diagram showing a captured image SG when the discharge of the first rinse liquid begins from the second discharge port 42a. Note that, for ease of understanding, FIGS. 5 and 6 only show the first nozzle 41, the second nozzle 42, part of the first liquid supply pipe 81, and the second liquid supply pipe 82 out of the components within the processing chamber 2. Also, for ease of understanding, FIGS. 5 and 6 depict the first nozzle 41 and the second nozzle 42 farther apart than they actually are.

As shown in FIG. 5, when the second valve VA2 described with reference to FIG. 3 switches from a closed state to an open state while the first chemical liquid is being discharged from the first discharge port 41a, the supply of the first rinse liquid from the second liquid supply pipe 82 to the second nozzle 42 begins. FIG. 5 shows a frame of the captured image SG at a stage before the first rinse liquid reaches the second discharge port 42a. FIG. 6 shows a frame of the captured image SG at a stage when the discharge of the first rinse liquid from the second discharge port 42a has begun.

When a frame of the captured image SG is input, the control unit 102 extracts an image processing area KA from the frame and acquires the timing to start ejecting the first rinse liquid based on the image of the image processing area KA. More specifically, the control unit 102 processes the image of the image processing area KA to acquire pixel values. Then, the control unit 102 acquires the timing to start ejecting the first rinse liquid from the second nozzle 42 based on the acquired pixel values.

In this embodiment, the image processing area KA includes a first image processing area KA1 extending from the tip (second outlet 42a) of the second nozzle 42 in the ejection direction of the first rinse liquid. Because the first rinse liquid is ejected vertically downward, the first image processing area KA1 has an elongated shape (e.g., rectangular) extending in the vertical direction of the captured image SG. The horizontal width of the first image processing area KA1 is set wider than the width of the first rinse liquid, and the vertical length of the first image processing area KA1 is set to a length that does not include the landing position of the first rinse liquid. The control unit 102 acquires the timing when the first rinse liquid is ejected from the second outlet 42a based on the image of the first image processing area KA1.

The image processing area KA is set for the third nozzle 43 in the same way as for the second nozzle 42. Specifically, the image processing area KA includes a second image processing area extending from the tip (third outlet 43a) of the third nozzle 43 in the ejection direction of the second rinse liquid. Therefore, the control unit 102 can detect the ejection start timing of the second rinse liquid based on the image of the second image processing area.

Furthermore, when the first nozzle 41 and the second nozzle 42 are located in the first retraction area described with reference to FIG. 2 and the fourth nozzle 44 is located in the processing position, the image processing area KA is set for the fourth nozzle 44 in the same way as for the second nozzle 42. Specifically, the image processing area KA includes a third image processing area extending from the tip of the fourth nozzle 44 (fourth outlet 44a) in the ejection direction of the second chemical liquid. Therefore, the control unit 102 can detect the ejection start timing of the second chemical liquid based on the image of the third image processing area.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a flowchart showing the substrate processing method of this embodiment. The substrate processing method shown in Figure 7 is performed by the substrate processing apparatus 100 described with reference to Figures 1 to 6. Therefore, Figure 7 shows the operation of the substrate processing apparatus 100 of this embodiment.

The substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 7 starts when the center robot CR loads a substrate W into the processing chamber 2. As shown in FIG. 7, when the center robot CR loads a substrate W into the processing chamber 2, the substrate holder 3 holds the substrate W (step S1).

Once the substrate holder 3 holds the substrate W, the imaging device 110 begins capturing images (step S2).

When the imaging device 110 starts imaging, the substrate rotation unit 7 rotates the substrate holder 3. As a result, the substrate W rotates (step S3).

After the substrate W starts to rotate, it is treated with a treatment liquid (step S4). In this embodiment, a first chemical liquid (e.g., DHF), a second chemical liquid (e.g., SC1), a first rinse liquid (e.g., deionized water), and a second rinse liquid (e.g., deionized water) are supplied to the substrate W in the following order to treat the substrate W. The substrate rotation unit 7 stops the rotation of the substrate W when substrate treatment is complete.

After the substrate processing is completed, the imaging device 110 ends imaging (step S5).

After the imaging device 110 has completed imaging, the substrate W is released from the substrate holder 3. The center robot CR then transports the substrate W out of the processing chamber 2 (step S6), thereby completing the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 7.

Next, the substrate processing method of this embodiment (operation of the substrate processing apparatus 100) will be described with reference to Figures 1 to 11. Figures 8 to 11 are flowcharts showing the flow of substrate processing (step S4 shown in Figure 7).

As shown in FIG. 8, when substrate processing begins, the first nozzle movement mechanism 5 first moves the first nozzle 41 from the first retraction area to the processing position (step S11). At this time, the second nozzle 42 moves from the first retraction area to the standby position in synchronization with the first nozzle 41.

When the first nozzle 41 moves to the processing position, the control device 101 (controller 102) controls the first valve VA1 (preceding valve) to start supplying the first chemical liquid (preceding processing liquid) to the first nozzle 41 (preceding nozzle) (step S12). Specifically, the control device 101 (controller 102) sends an open signal to the first valve VA1. In response to receiving the open signal, the first valve VA1 switches from a closed state to an open state. As a result, the supply of the first chemical liquid to the first nozzle 41 starts.

When the supply of the first chemical liquid (preceding treatment liquid) to the first nozzle 41 (preceding nozzle) begins, the first chemical liquid (preceding treatment liquid) is ejected from the first outlet 41a (outlet of the preceding nozzle) and the first chemical liquid (preceding treatment liquid) is supplied to the substrate W.

Note that a delay occurs between the start of supply of the first chemical liquid to the first nozzle 41 and the time the first chemical liquid is discharged from the first discharge port 41a. Specifically, during the first discharge of the first chemical liquid, a delay occurs equivalent to the time required for the first chemical liquid to reach the first nozzle 41 from the first valve VA1. During the second or subsequent discharge of the first chemical liquid, a delay occurs due to the suck-back process. Specifically, when the supply of the first chemical liquid is stopped, the first suck-back valve SB1 sucks back the first chemical liquid. Therefore, when the supply of the first chemical liquid begins, the first chemical liquid is drawn into the first liquid supply pipe 81. As a result, a delay occurs between the time when the first valve VA1 opens and the start of flow of the first chemical liquid, and the time when the first chemical liquid is discharged from the first discharge port 41a.

When the control device 101 (control unit 102) starts supplying the first chemical liquid, it determines whether a first predetermined time T1 has elapsed (step S13). Specifically, the control unit 102 starts timing in response to sending an open signal to the first valve VA1. The first predetermined time T1 indicates a predetermined value as the time interval for supplying the first chemical liquid to the first nozzle 41, and is stored in the memory unit 103. The control unit 102 determines whether the timing result has reached the first predetermined time T1. The top surface of the substrate W becomes covered with a liquid film of the first chemical liquid while the first predetermined time T1 has elapsed.

If the control device 101 (controller 102) determines that the first predetermined time T1 has not elapsed (No in step S13), it repeats the processing of step S13. If the control device 101 (controller 102) determines that the first predetermined time T1 has elapsed (Yes in step S13), it controls the second valve VA2 (trail valve) to start supplying the first rinse liquid (trail processing liquid) to the second nozzle 42 (trail nozzle) (step S14). Specifically, the control device 101 (controller 102) sends an open signal to the second valve VA2. In response to receiving the open signal, the second valve VA2 switches from a closed state to an open state. As a result, the supply of the first rinse liquid to the second nozzle 42 starts.

Similar to the first chemical liquid, a first delay time DT1 occurs between the time when the supply of the first rinse liquid to the second nozzle 42 begins and the time when the first rinse liquid is ejected from the second ejection port 42a.

After starting the supply of the first rinse liquid (trailing processing liquid) to the second nozzle 42 (trailing nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the first rinse liquid (trailing processing liquid) from the second outlet 42a (outlet of the trailing nozzle) has been detected (step S15).

Specifically, the control device 101 (controller 102) determines whether the start of ejection of the first rinse liquid from the second outlet 42a has been detected based on the captured image SG input from the imaging device 110. More specifically, the control device 101 (controller 102) extracts a first image processing area KA1 (see Figures 5 and 6) from each frame of the captured image. The control device 101 (controller 102) then performs image processing on each first image processing area KA1 to determine whether the start of ejection of the first rinse liquid from the second outlet 42a has been detected.

If the control device 101 (controller 102) determines that the start of discharge of the first rinse liquid from the second discharge port 42a has not been detected (No in step S15), it repeats the process of step S15. If the control device 101 (controller 102) determines that the start of discharge of the first rinse liquid (trailing processing liquid) from the second discharge port 42a (discharge port of the trailing nozzle) has been detected (Yes in step S15), it executes a closing operation control process to control the first valve VA1 (leading valve) to stop the supply of the first chemical liquid (leading processing liquid) to the first nozzle 41 (leading nozzle) (step S16). In this embodiment, the control device 101 (controller 102) stops the supply of the first chemical liquid when the first rinse liquid is discharged from the second discharge port 42a.

Specifically, the control device 101 (control unit 102) sends a close signal to the first valve VA1. In response to receiving the close signal, the first valve VA1 switches from an open state to a closed state. As a result, the supply of the first chemical liquid to the first nozzle 41 stops.

Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the first suck-back valve SB1. The first suck-back valve SB1 performs a suction operation based on the suction signal, sucking the first chemical liquid from the first liquid supply pipe 81 (suck-back process). The closing operation of the first valve VA1 and the suction operation of the first suck-back valve SB1 are performed in parallel. As a result, the first chemical liquid at the tip side of the first nozzle 41 is pulled back, and the discharge of the first chemical liquid stops.

As shown in FIG. 9 , after stopping the supply of the first chemical liquid, the first nozzle movement mechanism 5 moves the second nozzle 42 from the standby position to the processing position (step S21). Note that while the second nozzle 42 (leading nozzle) is positioned at the standby position, the second outlet 42a (outlet of the leading nozzle) starts to discharge the first rinse liquid (leading processing liquid). Therefore, the second nozzle 42 (leading nozzle) supplies the first rinse liquid (leading processing liquid) to the substrate W while moving from the standby position to the processing position. Then, after moving to the processing position, the second nozzle 42 (leading nozzle) supplies the first rinse liquid (leading processing liquid) to the substrate W from the processing position.

The control device 101 (control unit 102) determines whether a second predetermined time T2 has elapsed after the second nozzle 42 has moved to the processing position (step S22). Specifically, the control unit 102 starts timing in response to sending an open signal to the second valve VA2 (pilot valve). The second predetermined time T2 indicates a predetermined value as the time interval for supplying the first rinse liquid to the second nozzle 42, and is stored in the memory unit 103. The control unit 102 determines whether the timing result reaches the second predetermined time T2. The upper surface of the substrate W becomes covered with a liquid film of the first rinse liquid during the elapse of the second predetermined time T2. In other words, the liquid film covering the upper surface of the substrate W is replaced with a liquid film of the first rinse liquid from the liquid film of the first chemical liquid.

If the control device 101 (controller 102) determines that the second predetermined time T2 has not elapsed (No in step S22), it repeats the processing of step S22. If the control device 101 (controller 102) determines that the second predetermined time T2 has elapsed (Yes in step S22), it controls the third valve VA3 (trail valve) to start supplying the second rinse liquid (trail processing liquid) to the third nozzle 43 (trail nozzle) (step S23). Specifically, the control device 101 (controller 102) sends an open signal to the third valve VA3. In response to receiving the open signal, the third valve VA3 switches from a closed state to an open state. As a result, the supply of the second rinse liquid to the third nozzle 43 starts.

Similar to the first chemical liquid, a second delay time DT2 occurs between the time when the supply of the second rinse liquid to the third nozzle 43 begins and the time when the second rinse liquid is ejected from the third outlet 43a.

After starting the supply of the second rinse liquid (trailing processing liquid) to the third nozzle 43 (trailing nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the second rinse liquid (trailing processing liquid) from the third outlet 43a (outlet of the trailing nozzle) has been detected, as with the first rinse liquid (step S24).

If the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid from the third outlet 43a has not been detected (No in step S24), it repeats the process of step S24. If the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third outlet 43a (outlet of the trailing nozzle) has been detected (Yes in step S24), it executes a closing operation control process to control the second valve VA2 (leading valve) to stop the supply of the first rinse liquid (leading processing liquid) to the second nozzle 42 (leading nozzle) (step S25). In this embodiment, the control device 101 (controller 102) stops the supply of the first rinse liquid when the second rinse liquid is discharged from the third outlet 43a.

Specifically, the control device 101 (control unit 102) sends a close signal to the second valve VA2. In response to receiving the close signal, the second valve VA2 switches from an open state to a closed state. As a result, the supply of the first rinse liquid to the second nozzle 42 stops.

Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the second suck-back valve SB2. The second suck-back valve SB2 performs a suction operation based on the suction signal, sucking in the first rinse liquid from the second liquid supply pipe 82 (suck-back process). The closing operation of the second valve VA2 and the suction operation of the second suck-back valve SB2 are performed in parallel. As a result, the first rinse liquid at the tip side of the second nozzle 42 is pulled back, and the discharge of the first rinse liquid stops.

After the supply of the first rinse liquid has stopped, the first nozzle movement mechanism 5 moves the first nozzle 41 and the second nozzle 42 to the first retraction area (step S26). Note that the discharge of the second rinse liquid begins before the discharge of the first rinse liquid stops. Therefore, while the first nozzle 41 and the second nozzle 42 are moving to the first retraction area, the second rinse liquid (preceding processing liquid) is supplied to the top surface of the substrate W from the third nozzle 43 (preceding nozzle).

As shown in FIG. 10, after the first nozzle 41 and the second nozzle 42 have moved to the first retraction area, the second nozzle movement mechanism 6 begins to move the fourth nozzle 44 (step S31).

When the fourth nozzle 44 starts moving, the control device 101 (control unit 102) determines whether the third predetermined time T3 has elapsed (step S32). The fourth nozzle 44 moves from the second evacuation area to the processing position before the third predetermined time T3 has elapsed.

Specifically, the control unit 102 starts timing in response to the start of movement of the fourth nozzle 44. The third preset time T3 indicates a predetermined value as the time interval for supplying the second rinse liquid to the third nozzle 43, and is stored in the memory unit 103. The control unit 102 determines whether the timing result has reached the third preset time T3.

If the control device 101 (control unit 102) determines that the third predetermined time T3 has not elapsed (No in step S32), it repeats the processing of step S32. If the control device 101 (control unit 102) determines that the third predetermined time T3 has elapsed (Yes in step S32), it controls the fourth valve VA4 (trail valve) to start supplying the second chemical liquid (trail processing liquid) to the fourth nozzle 44 (trail nozzle) (step S33). Specifically, the control device 101 (control unit 102) sends an open signal to the fourth valve VA4. In response to receiving the open signal, the fourth valve VA4 switches from a closed state to an open state. As a result, the supply of the second chemical liquid to the fourth nozzle 44 starts.

Similar to the first chemical liquid, a third delay time DT3 occurs between the time when the supply of the second chemical liquid to the fourth nozzle 44 begins and the time when the second chemical liquid is ejected from the fourth outlet 44a.

After starting the supply of the second chemical liquid (trailing processing liquid) to the fourth nozzle 44 (trailing nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the second chemical liquid (trailing processing liquid) from the fourth outlet 44a (outlet of the trailing nozzle) has been detected, as with the first rinse liquid (step S34).

If the control device 101 (controller 102) determines that the start of discharge of the second chemical liquid from the fourth outlet 44a has not been detected (No in step S34), it repeats the process of step S34. If the control device 101 (controller 102) determines that the start of discharge of the second chemical liquid (trailing processing liquid) from the fourth outlet 44a (outlet of the trailing nozzle) has been detected (Yes in step S34), it executes a closing operation control process to control the third valve VA3 (leading valve) to stop the supply of the second rinse liquid (leading processing liquid) to the third nozzle 43 (leading nozzle) (step S35). In this embodiment, the control device 101 (controller 102) stops the supply of the second rinse liquid when the second chemical liquid is discharged from the fourth outlet 44a.

Specifically, the control device 101 (control unit 102) sends a close signal to the third valve VA3. In response to receiving the close signal, the third valve VA3 switches from an open state to a closed state. As a result, the supply of the second rinse liquid to the third nozzle 43 stops.

Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the third suck-back valve SB3. The third suck-back valve SB3 performs a suction operation based on the suction signal, sucking the second rinse liquid from the third liquid supply pipe 83 (suck-back process). The closing operation of the third valve VA3 and the suction operation of the third suck-back valve SB3 are performed in parallel. As a result, the second rinse liquid at the tip side of the third nozzle 43 is drawn back, and the discharge of the second rinse liquid stops.

After stopping the supply of the second rinse liquid, the control device 101 (control unit 102) determines whether a fourth predetermined time T4 has elapsed (step S36). Specifically, the control unit 102 starts timing in response to sending an open signal to the fourth valve VA4 (preceding valve). The fourth predetermined time T4 indicates a predetermined value as the time interval for supplying the second chemical liquid (preceding processing liquid) to the fourth nozzle 44 (preceding nozzle), and is stored in the memory unit 103. The control unit 102 determines whether the timing result reaches the fourth predetermined time T4. The top surface of the substrate W becomes covered with a liquid film of the second chemical liquid while the fourth predetermined time T4 has elapsed. In other words, the liquid film covering the top surface of the substrate W is replaced with a liquid film of the second chemical liquid from the liquid film of the rinse liquid.

If the control device 101 (controller 102) determines that the fourth predetermined time T4 has not elapsed (No in step S36), it repeats the processing of step S36. If the control device 101 (controller 102) determines that the fourth predetermined time T4 has elapsed (Yes in step S36), it controls the third valve VA3 (trail valve) to start supplying the second rinse liquid (trail processing liquid) to the third nozzle 43 (trail nozzle) (step S37), similar to step S23 shown in FIG. 9 . Note that, as already explained, a delay time (fourth delay time DT4) occurs between sending an open signal to the third valve VA3 and the start of ejection of the second rinse liquid by the third nozzle 43.

As shown in FIG. 11, after starting the supply of the second rinse liquid (trailing processing liquid) to the third nozzle 43 (trailing nozzle), the control device 101 (controller 102) determines whether the start of ejection of the second rinse liquid (trailing processing liquid) from the third outlet 43a (outlet of the trailing nozzle) has been detected (step S41), similar to step S24 shown in FIG. 9.

If the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid from the third discharge port 43a has not been detected (No in step S41), it repeats the process of step S41. If the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S41), it executes a closing operation control process to control the fourth valve VA4 (leading valve) to stop the supply of the second chemical liquid (leading processing liquid) to the fourth nozzle 44 (leading nozzle) (step S42). In this embodiment, the control device 101 (controller 102) stops the supply of the second chemical liquid when the second rinse liquid is discharged from the third discharge port 43a.

Specifically, the control device 101 (control unit 102) sends a close signal to the fourth valve VA4. In response to receiving the close signal, the fourth valve VA4 switches from an open state to a closed state. As a result, the supply of the second chemical liquid to the fourth nozzle 44 stops.

Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the fourth suck-back valve SB4. The fourth suck-back valve SB4 performs a suction operation based on the suction signal, sucking the second chemical liquid from the fourth liquid supply pipe 84 (suck-back process). The closing operation of the fourth valve VA4 and the suction operation of the fourth suck-back valve SB4 are performed in parallel. As a result, the second chemical liquid at the tip side of the fourth nozzle 44 is pulled back, and the discharge of the second chemical liquid stops.

After stopping the supply of the second chemical liquid, the control device 101 (control unit 102) determines whether a fifth predetermined time T5 has elapsed (step S43). Specifically, the control unit 102 starts timing in response to sending an open signal to the third valve VA3. The fifth predetermined time T5 indicates a predetermined value as the time interval for supplying the second rinse liquid to the third nozzle 43, and is stored in the memory unit 103. The control unit 102 determines whether the timing result reaches the fifth predetermined time T5. The top surface of the substrate W becomes covered with a liquid film of the second rinse liquid while the fifth predetermined time T5 has elapsed. In other words, the liquid film covering the top surface of the substrate W is replaced with a liquid film of the second rinse liquid from the liquid film of the second chemical liquid.

If the control device 101 (controller 102) determines that the fifth predetermined time T5 has not elapsed (No in step S43), it repeats the processing of step S43. If the control device 101 (controller 102) determines that the fifth predetermined time T5 has elapsed (Yes in step S43), it controls the third valve VA3 to stop the supply of the second rinse liquid to the third nozzle 43 (step S44), similar to step S35 shown in FIG. 10.

After the supply of the second rinse liquid is stopped, the substrate rotation unit 7 increases the rotation speed of the substrate W to dry the substrate W (step S45). When a predetermined time has elapsed since the supply of the second rinse liquid was stopped, the substrate rotation unit 7 stops the rotation of the substrate W. As a result, the operation of the substrate processing apparatus 100 (substrate processing method) transitions to step S5 shown in FIG. 7.

The substrate processing method of this embodiment (operation of the substrate processing apparatus 100) has been described above with reference to Figures 1 to 11. Note that the substrate processing method shown in Figures 7 to 11 is performed by the substrate processing apparatus 100 for each processing chamber 2.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a timing chart showing the opening and closing operations of the first valve VA1 to the fourth valve VA4 and the detection operation by the imaging device 110. In Figure 12, the horizontal axis represents time.

As shown in FIG. 12, when the first nozzle 41 moves to the processing position (time t1), the control device 101 (controller 102) sends an open signal to the first valve VA1. As a result, the first valve VA1 (preceding valve) switches from a closed state to an open state, and the supply of the first chemical liquid to the first nozzle 41 begins, and the first chemical liquid (preceding processing liquid) is supplied to the substrate W from the first outlet 41a (outlet of the preceding nozzle).

When the first predetermined time T1 has elapsed since sending the open signal to the first valve VA1 and it is time t2, the control device 101 (control unit 102) sends an open signal to the second valve VA2. As a result, the second valve VA2 (trailing valve) switches from a closed state to an open state, and the supply of the first rinse liquid (trailing processing liquid) to the second nozzle 42 (trailing nozzle) begins.

As already explained, the first delay time DT1 occurs between when the second valve VA2 switches from the closed state to the open state and when the first rinse liquid is discharged by the second nozzle 42. Therefore, the imaging device 110 detects the start of discharge of the first rinse liquid at time t3, when the first delay time DT1 has elapsed since time t2. As a result, the control device 101 (control unit 102) sends a close signal to the first valve VA1 at time t3, when the first delay time DT1 has elapsed since time t2, to switch the first valve VA1 from the open state to the closed state. When the first valve VA1 (preceding valve) switches from the open state to the closed state, the supply of the first chemical liquid to the first nozzle 41 stops, and the supply of the first chemical liquid (preceding processing liquid) from the first discharge port 41a (discharge port of the preceding nozzle) to the substrate W stops.

When the second predetermined time T2 has elapsed since the control device 101 (control unit 102) sent an open signal to the second valve VA2 (leading valve), at time t4, the control device 101 (control unit 102) sends an open signal to the third valve VA3 (following valve). As a result, the third valve VA3 switches from a closed state to an open state, and the supply of the second rinse liquid (following processing liquid) to the third nozzle 43 (following nozzle) begins. As already explained, a second delay time DT2 occurs between the time the third valve VA3 opens and the time the second rinse liquid is ejected by the third nozzle 43.

Therefore, the imaging device 110 detects the start of discharge of the second rinse liquid (following processing liquid) at time t5, when the second delay time DT2 has elapsed since time t4. As a result, the control device 101 (control unit 102) sends a close signal to the second valve VA2 at time t5, when the second delay time DT2 has elapsed since time t4, switching the second valve VA2 from an open state to a closed state. When the second valve VA2 (leading valve) switches from an open state to a closed state, the supply of the first rinse liquid to the second nozzle 42 stops, and the supply of the first rinse liquid (leading processing liquid) from the second outlet 42a (outlet of the leading nozzle) to the substrate W stops.

When the third predetermined time T3 has elapsed since the control device 101 (control unit 102) sent an open signal to the third valve VA3 (leading valve), at time t6, the control device 101 (control unit 102) sends an open signal to the fourth valve VA4 (trailing valve). As a result, the fourth valve VA4 switches from a closed state to an open state, and the supply of the second chemical liquid (trailing processing liquid) to the fourth nozzle 44 (trailing nozzle) begins. As already explained, a third delay time DT3 occurs between the time the fourth valve VA4 opens and the time the second chemical liquid is ejected by the fourth nozzle 44.

Therefore, the imaging device 110 detects the start of discharge of the second chemical liquid (following processing liquid) at time t7, when the third delay time DT3 has elapsed since time t6. As a result, the control device 101 (control unit 102) sends a close signal to the third valve VA3 at time t7, when the third delay time DT3 has elapsed since time t6, to switch the third valve VA3 from an open state to a closed state. When the third valve VA3 (leading valve) switches from an open state to a closed state, the supply of the second rinse liquid to the third nozzle 43 stops, and the supply of the second rinse liquid (leading processing liquid) from the third outlet 43a (outlet of the leading nozzle) to the substrate W stops.

When the fourth predetermined time T4 has elapsed since the control device 101 (control unit 102) sent an open signal to the fourth valve VA4 (leading valve), at time t8, the control device 101 (controller 102) sends an open signal to the third valve VA3 (trailing valve). As a result, the third valve VA3 switches from a closed state to an open state, and the supply of the second rinse liquid (trailing processing liquid) to the third nozzle 43 (trailing nozzle) begins. As already explained, a fourth delay time DT4 occurs between the time the third valve VA3 switches from a closed state to an open state and the time the second rinse liquid is ejected by the third nozzle 43.

Therefore, the imaging device 110 detects the start of discharge of the second rinse liquid (following processing liquid) at time t9, when the fourth delay time DT4 has elapsed since time t8. As a result, the control device 101 (control unit 102) sends a close signal to the fourth valve VA4 at time t9, when the fourth delay time DT4 has elapsed since time t8, to switch the fourth valve VA4 from an open state to a closed state. When the fourth valve VA4 (leading valve) switches from an open state to a closed state, the supply of the second chemical liquid to the fourth nozzle 44 stops, and the supply of the second chemical liquid (leading processing liquid) from the fourth outlet 44a (outlet of the leading nozzle) to the substrate W stops.

Embodiment 1 of the present invention has been described above with reference to Figures 1 to 12. According to this embodiment, the control unit 102 switches the leading valve from an open state to a closed state in response to the imaging device 110 (detection unit) detecting the start of ejection of the subsequent processing liquid. Therefore, the operator does not need to set delay times (first delay time DT1 to fourth delay time DT4) that delay the timing of the closing operation of the leading valve.

For example, the delay time needs to be changed each time the discharge pressure of each processing liquid changes. Similarly, the delay time needs to be changed each time the air pressure that opens and closes each valve or the suck-back position of each processing liquid changes. Furthermore, the delay time needs to be changed each time the power usage of the factory in which the substrate processing apparatus 100 is installed changes. Therefore, a configuration in which the operator sets the delay time places a heavy burden on the operator. In contrast, according to this embodiment, the operator does not need to set the delay time, thereby reducing the burden on the operator.

Furthermore, the length of the delay time varies for each processing chamber 2 due to factors such as the length of the piping from each valve to each outlet and the elevation difference between each outlet. Therefore, the delay time must be set for each processing chamber 2. According to this embodiment, the operator does not need to set the delay time, thereby reducing the burden on the operator.

Furthermore, in a configuration in which the ejection of the preceding processing liquid from the preceding nozzle is stopped at the timing when the supply of the following processing liquid to the following nozzle begins (when the following valve is switched from a closed state to an open state), particles may be generated on the substrate W due to the delay time between the start of the supply of the following processing liquid to the following nozzle and the arrival of the following processing liquid on the substrate W. In particular, if a fine pattern is formed on the surface of the substrate W, the generation of particles has a significant impact on the characteristics of the substrate W. Particles are, for example, watermarks.

More specifically, poor coverage may occur on the outer periphery of the substrate W due to the delay between when the supply of the subsequent processing liquid to the subsequent nozzle begins and when the subsequent processing liquid lands on the substrate W. Poor coverage means that the top surface of the substrate W is exposed and not covered by a film of processing liquid. Poor coverage occurs primarily due to the surface tension of the processing liquid. If poor coverage occurs on the outer periphery of the substrate W and the outer periphery of the substrate W dries, watermarks may occur on the outer periphery of the substrate W.

Furthermore, in a configuration in which the ejection of the preceding processing liquid from the preceding nozzle is stopped at the timing when the supply of the following processing liquid to the following nozzle is started (the timing when the following valve is switched from a closed state to an open state), there is a possibility that the pattern formed on the surface of the substrate W will collapse due to the delay time between the start of the supply of the following processing liquid to the following nozzle and the arrival of the following processing liquid on the substrate W. In particular, when a fine pattern is formed on the surface of the substrate W, the collapse of the pattern has a significant impact on the characteristics of the substrate W.

More specifically, as already explained, if poor coverage occurs on the outer periphery of the substrate W due to the delay time between when the supply of the subsequent processing liquid to the subsequent nozzle begins and when the subsequent processing liquid lands on the substrate W, the outer periphery of the substrate W may dry out. Pattern collapse occurs as a result of the surface of the substrate W drying out.

In contrast, according to this embodiment, the start of ejection of the trailing processing liquid from the trailing nozzle is detected. Therefore, compared to a configuration in which ejection of the trailing processing liquid from the leading nozzle is stopped at the timing when the supply of the trailing processing liquid to the trailing nozzle is started (the timing when the trailing valve is switched from a closed state to an open state), the timing at which ejection of the leading processing liquid from the leading nozzle is stopped can be controlled so as to reduce the delay time between when ejection of the leading processing liquid is stopped and when the trailing processing liquid lands on the substrate W. Therefore, the delay time between when ejection of the leading processing liquid is stopped and when the trailing processing liquid lands on the substrate W can be reduced, thereby suppressing the occurrence of watermarks and pattern collapse.

In this embodiment, the imaging device 110 starts imaging after the substrate holder 3 holds the substrate W and ends imaging after the substrate processing is performed. However, the timing at which the imaging device 110 starts and ends imaging is not particularly limited as long as it can detect the start of ejection of the first rinse liquid, the start of ejection of the second rinse liquid, and the start of ejection of the second chemical liquid.

[Embodiment 2]
Next, a second embodiment of the present invention will be described with reference to Figures 1 to 6, 9 to 11, and 13 to 15. However, only differences from the first embodiment will be described, and a description of the same aspects as in the first embodiment will be omitted. The second embodiment differs from the first embodiment in that data indicating the ejection start timing of each treatment liquid is transmitted to the external device GS.

Figure 13 is a block diagram showing part of the configuration of the substrate processing apparatus 100 of this embodiment. Note that, for ease of understanding, Figure 13 shows only the control device 101 and communication unit 112 of the components of the substrate processing apparatus 100, and omits other components.

As shown in FIG. 13, the substrate processing apparatus 100 of this embodiment further includes a communication unit 112. The communication unit 112 communicates with an external device GS. For example, the communication unit 112 may be connected to a network NW via a wired or wireless connection and communicate with an external device GS connected to the network NW. The network NW includes, for example, the Internet, a LAN (Local Area Network), and a public telephone network. In this case, the communication unit 112 may be, for example, a network interface controller.

In this embodiment, the communication unit 112 transmits data indicating the ejection start timing of each processing liquid (first chemical liquid, second chemical liquid, first rinse liquid, and second rinse liquid) to the external device GS. More specifically, the communication unit 112 transmits to the external device GS the ejection start timing of the first chemical liquid, the ejection start timing of the first rinse liquid, the ejection start timing of the second rinse liquid (first time), the ejection start timing of the second chemical liquid, and the ejection start timing of the second rinse liquid (second time).

As described with reference to FIG. 4, the imaging range SH of the imaging device 110 further includes a range in which the tip (first outlet 41a) of the first nozzle 41 located at the processing position and the first chemical liquid ejected from that tip (first outlet 41a) can be imaged. In this embodiment, the imaging device 110 further detects the start of ejection of the first chemical liquid, as well as the second chemical liquid, the first rinse liquid, and the second rinse liquid. Furthermore, the control unit 102 further acquires the timing at which the first nozzle 41 starts ejecting the first chemical liquid, as well as the second chemical liquid, the first rinse liquid, and the second rinse liquid.

More specifically, when the first nozzle 41 is positioned at the processing position, the control unit 102 sets an image processing area KA for the first nozzle 41. Specifically, the image processing area KA includes a fourth image processing area extending from the tip (first outlet 41a) of the first nozzle 41 in the ejection direction of the first chemical liquid. The control unit 102 detects the ejection start timing of the first chemical liquid based on the image of the fourth image processing area.

The external device GS is, for example, a host computer or a server. The external device GS collects and analyzes the ejection start timing of each processing liquid. For example, the external device GS may send a command to the substrate processing apparatus 100 to adjust the supply time of each processing liquid to the substrate W based on the collected ejection start timing of each processing liquid. The external device GS may also communicate with multiple substrate processing apparatuses 100. In this case, the external device GS collects the ejection start timing of each processing liquid for each substrate processing apparatus 100.

Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 6, 9 to 11, 13, and 14. Figure 14 is a flowchart showing the substrate processing method of this embodiment. The substrate processing method shown in Figure 14 is performed by the substrate processing apparatus 100 described with reference to Figures 1 to 6 and 13. Therefore, Figure 14 shows the operation of the substrate processing apparatus 100 of this embodiment.

The substrate processing method (operation of the substrate processing apparatus 100) shown in Figure 14 further includes step S7 in addition to the substrate processing method (operation of the substrate processing apparatus 100) described with reference to Figure 7.

Specifically, when the center robot CR unloads the substrate W from the processing chamber 2 (step S6), the control device 101 (controller 102) controls the communication unit 112 to transmit data indicating the timing for starting the discharge of each processing liquid (first chemical liquid, second chemical liquid, first rinse liquid, and second rinse liquid) to the external device GS (step S7). As a result, the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 14 is completed.

Next, the substrate processing method of this embodiment (operation of the substrate processing apparatus 100) will be described with reference to Figures 1 to 6, 9 to 11, and 13 to 15. Figure 15 is a flowchart showing the flow of substrate processing (step S4 shown in Figure 14). In more detail, Figure 15 shows part of the substrate processing flow.

As shown in FIG. 15, when substrate processing begins, the first nozzle movement mechanism 5 moves the first nozzle 41 from the first retraction area to the processing position (step S51), similar to step S11 in FIG. 8.

When the first nozzle 41 moves to the processing position, similar to step S12 in Figure 8, the control device 101 (control unit 102) controls the first valve VA1 (preceding valve) to start supplying the first chemical liquid (preceding processing liquid) to the first nozzle 41 (preceding nozzle) (step S52).

After starting the supply of the first chemical liquid, the control device 101 (controller 102) determines whether the start of ejection of the first chemical liquid (preceding treatment liquid) from the first outlet 41a (the outlet of the preceding nozzle) has been detected (step S53). Specifically, the control device 101 (controller 102) determines whether the start of ejection of the first chemical liquid from the first outlet 41a has been detected based on the captured image SG input from the imaging device 110. More specifically, the control device 101 (controller 102) extracts a fourth image processing area from each frame of the captured image SG. Then, the control device 101 (controller 102) performs image processing on each fourth image processing area to determine whether the start of ejection of the first chemical liquid from the first outlet 41a has been detected.

If the control device 101 (controller 102) determines that the start of ejection of the first chemical liquid from the first outlet 41a has not been detected (No in step S53), it repeats the processing of step S53. If the control device 101 (controller 102) determines that the start of ejection of the first chemical liquid (preceding processing liquid) from the first outlet 41a (the outlet of the preceding nozzle) has been detected (Yes in step S53), it determines whether a first predetermined time T1 has elapsed since the supply of the first chemical liquid began (step S54), similar to step S13 in FIG. 8. The subsequent steps (steps S55 to S57) are similar to steps S14 to S16 in FIG. 8, and therefore their description will be omitted.

Embodiment 2 of the present invention has been described above with reference to Figures 1 to 6, 9 to 11, and 13 to 15. According to this embodiment, it is possible to adjust the supply time of each treatment liquid with higher precision compared to a configuration in which the external device GS analyzes the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4).

As previously explained, the timing at which each processing liquid (first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid) starts to be discharged from each outlet (first outlet 41a to fourth outlet 44a) is delayed from the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4). These delay times are caused by fluctuations in the discharge pressure of each processing liquid, fluctuations in the air pressure that opens and closes each valve, fluctuations in the suck-back position of each processing liquid, the length of the piping from each valve to each outlet, and the elevation difference between each outlet. Therefore, the delay times are not uniform. Therefore, in a configuration that analyzes the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4), various factors must be taken into consideration in order to adjust the supply time of each processing liquid to the substrate W. Therefore, it is not easy to adjust the supply time of each processing liquid to the substrate W with high precision. In contrast, according to this embodiment, the ejection start timing of each processing liquid can be analyzed, making it possible to adjust the supply time of each processing liquid onto the substrate W with high precision.

In this embodiment, when the center robot CR unloads the substrate W from the processing chamber 2 (step S6), the control device 101 (controller 102) controls the communication unit 112 to send data indicating the ejection start timing of each processing liquid to the external device GS. However, the timing for sending the data indicating the ejection start timing of each processing liquid is not particularly limited. For example, the control device 101 (controller 102) may send data indicating the ejection start timing of each processing liquid to the external device GS each time a predetermined number of substrate processes are performed.

In addition, in this embodiment, the ejection start timing of each processing liquid is detected, but the control unit 102 may acquire the supply stop timing of each processing liquid instead of, or in addition to, the ejection start timing of each processing liquid, and transmit this timing data to the external device GS. By analyzing the supply stop timing of each processing liquid instead of, or in addition to, the ejection start timing of each processing liquid, it becomes possible to adjust the supply time of each processing liquid to the substrate W with higher precision.

Specifically, the control unit 102 may acquire the timing at which a close signal is sent to the first valve VA1 as the timing at which the supply of the first chemical liquid is stopped (step S57 in FIG. 15). Similarly, the control unit 102 may acquire the timing at which a close signal is sent to the second valve VA2 (step S25 in FIG. 9), the timing at which a close signal is sent to the third valve VA3 (step S35 in FIG. 10), and the timing at which a close signal is sent to the fourth valve VA4 (step S42 in FIG. 11) as the timing at which the supply of the first rinse liquid, the second rinse liquid (first time), and the second chemical liquid is stopped.

[Embodiment 3]
Next, a third embodiment of the present invention will be described with reference to Figures 1 to 8, 10, and 16 to 20. However, differences from the first and second embodiments will be described, and a description of the same aspects as the first and second embodiments will be omitted. The third embodiment differs from the first and second embodiments in that the cessation of the discharge of the first rinse liquid (preceding treatment liquid) and the second chemical liquid (preceding treatment liquid) is further delayed after the start of the discharge of the second rinse liquid (subsequent treatment liquid).

Figure 16 is a block diagram showing part of the configuration of the substrate processing apparatus 100 of this embodiment. Note that, for ease of understanding, Figure 16 shows only the control device 101, input unit 113, and display unit 114 of the components of the substrate processing apparatus 100, and omits the other components. As shown in Figure 16, the substrate processing apparatus 100 of this embodiment further includes the input unit 113 and the display unit 114.

The input unit 113 is a user interface device operated by the worker. The input unit 113 inputs instructions (control signals) to the control unit 102 in response to the worker's operations. The input unit 113 also inputs data in response to the worker's operations to the control unit 102. The input unit 113 typically includes a keyboard and a mouse. The input unit 113 may also include a touch sensor. The touch sensor is overlaid on the display surface of the display unit 114 and generates a signal indicating a touch operation by the worker on the display surface. The worker can input various instructions and data to the control unit 102 by performing a touch operation.

In this embodiment, the worker can operate the input unit 113 to input (register or set) various pieces of information into input fields on the screen displayed on the display unit 114. Specifically, the worker can operate the input unit 113 to input the value of the additional delay time ADT.

As explained with reference to FIG. 2, the third nozzle 43 is disposed outside the liquid receiving portion 9 and ejects the second rinse liquid from outside the liquid receiving portion 9 toward the center of the rotating substrate W. Therefore, a delay time occurs between when the third nozzle 43 starts ejecting the second rinse liquid and when the second rinse liquid lands on the substrate W. Hereinafter, this delay time may be referred to as the "liquid arrival delay time." The additional delay time ADT can be set according to the liquid arrival delay time.

Figure 17 shows the input screen GA displayed by the display unit 114. The input screen GA is a screen for setting the additional delay time ADT. As shown in Figure 17, the input screen GA includes an input field NR for entering the value of the additional delay time ADT.

When the input screen GA is displayed on the display unit 114, the operator can operate the input unit 113 to input the value of the additional delay time ADT into the input field NR. The operator may determine the value of the additional delay time ADT by taking into account, for example, the discharge flow rate of the second rinse liquid and the distance from the third discharge port 43a to the substrate W.

Next, the substrate processing method of this embodiment (operation of the substrate processing apparatus 100) will be described with reference to Figures 1 to 8, 10, and 16 to 19. Figures 18 and 19 are flowcharts showing the substrate processing flow (step S4 shown in Figure 7). In detail, Figure 18 shows one part of the substrate processing flow. Figure 19 shows another part of the substrate processing flow.

As shown in FIG. 18, when the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S24), it executes a closing operation control process to control the second valve VA2 (leading valve) to stop the supply of the first rinse liquid (leading processing liquid) to the second nozzle 42 (leading nozzle) (step S25).

More specifically, when the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S24), it determines whether the additional delay time ADT described with reference to Figures 16 and 17 has elapsed (step S251). Specifically, the controller 102 starts timing in response to the detection of the start of discharge of the second rinse liquid. The controller 102 determines whether the timing result has reached the additional delay time ADT. The second rinse liquid lands on the substrate W during the elapse of the additional delay time ADT.

If the control device 101 (controller 102) determines that the additional delay time ADT has not elapsed (No in step S251), it repeats the process of step S251. If the control device 101 (controller 102) determines that the additional delay time ADT has elapsed (Yes in step S251), it executes a closing operation control process to control the second valve VA2 (preceding valve) to stop the supply of the first rinse liquid (preceding processing liquid) to the second nozzle 42 (preceding nozzle) (step S252).

Also, as shown in FIG. 19, when the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S41), it executes a closing operation control process to control the fourth valve VA4 (leading valve) to stop the supply of the second chemical liquid (leading processing liquid) to the fourth nozzle 44 (leading nozzle) (step S42).

More specifically, when the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S41), it determines whether the additional delay time ADT has elapsed (step S421), similar to step S251 shown in FIG. 18 . Then, when the control device 101 (controller 102) determines that the additional delay time ADT has elapsed (Yes in step S421), it executes a closing operation control process to control the fourth valve VA4 (leading valve) to stop the supply of the second chemical liquid (leading processing liquid) to the fourth nozzle 44 (leading nozzle) (step S422).

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 8, 10, and 16 to 20. Figure 20 is a timing chart showing the opening and closing operations of the first valve VA1 to the fourth valve VA4 and the detection operation by the imaging device 110. In Figure 20, the horizontal axis represents time.

As shown in FIG. 20, the second valve VA2 does not transition to a closed state when the start of ejection of the second rinse liquid is detected (time t15), but remains open. In this embodiment, the second valve VA2 switches from an open state to a closed state when an additional delay time ADT has elapsed (time 16) from the time when the start of ejection of the second rinse liquid was detected (time t15). Similarly, the fourth valve VA4 switches from an open state to a closed state when an additional delay time ADT has elapsed (time 21) from the time when the start of ejection of the second rinse liquid was detected (time t20).

Embodiment 3 of the present invention has been described above with reference to Figures 1 to 8, 10, and 16 to 20. According to this embodiment, coverage defects caused by the liquid arrival delay time after the start of discharge of the second rinse liquid are less likely to occur.

[Embodiment 4]
Next, a fourth embodiment of the present invention will be described with reference to Figures 1 to 7, 9 to 11, 21, and 22. However, differences from the first to third embodiments will be described, and a description of the same aspects as the first to third embodiments will be omitted. The fourth embodiment differs from the first to third embodiments in that the timing for starting the supply of the first chemical liquid is delayed.

Figure 21 is a flowchart showing the flow of substrate processing (step S4 shown in Figure 7). In detail, Figure 21 shows part of the flow of substrate processing. As shown in Figure 21, when substrate processing begins, the first nozzle movement mechanism 5 moves the first nozzle 41 from the first retraction area to the processing position (step S71), similar to step S11 in Figure 8.

When the first nozzle 41 moves to the processing position, the control device 101 (control unit 102) determines whether the start delay time SDT has elapsed (step S72). Specifically, the control unit 102 starts timing in response to the first nozzle 41 moving to the processing position. The start delay time SDT is stored in the memory unit 103. The control unit 102 determines whether the timing result has reached the start delay time SDT.

If the control device 101 (controller 102) determines that the start delay time SDT has not elapsed (No in step S72), it repeats the processing of step S72. If the control device 101 (controller 102) determines that the start delay time SDT has elapsed (Yes in step S72), it controls the second valve VA2 (trail valve) to start supplying the first rinse liquid (trail processing liquid) to the second nozzle 42 (trail nozzle) (step S73), similar to step S12 in FIG. 8. The subsequent operations (steps S74 to S77) are similar to steps S13 to S16 in FIG. 8, and therefore their description will be omitted.

Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 7, 9 to 11, 21, and 22. Figure 22 is a timing chart showing the opening and closing operations of the first valve VA1 and the second valve VA2, and the detection operation by the imaging device 110. In Figure 22, the horizontal axis represents time.

As shown in FIG. 22, the control device 101 (control unit 102) sends an open signal to the first valve VA1 at a timing (time t22) when the start delay time SDT has elapsed since the timing (time t21) when the first nozzle 41 has moved to the processing position. As a result, the first valve VA1 opens, the supply of the first chemical liquid to the first nozzle 41 begins, and the first chemical liquid is supplied to the substrate W from the first outlet 41a.

Now, the start delay time SDT will be explained. The start delay time SDT is determined based on the first delay time DT1. For example, the control unit 102 may acquire the first delay time DT1 when the first substrate processing is performed, and set the value of the first delay time DT1 as the value of the start delay time SDT. Alternatively, the control unit 102 may acquire the first delay time DT1 each time substrate processing is performed, and update the start delay time SDT before the next substrate processing is performed.

Embodiment 4 of the present invention has been described above with reference to Figures 1 to 7, 9, 10, 21, and 22. According to this embodiment, it is possible to prevent an increase in the supply time of the first chemical liquid to the substrate W due to the first delay time DT1. Therefore, it is possible to prevent the occurrence of defects due to an increase in the supply time of the first chemical liquid (previous processing liquid) to the substrate W.

For example, if the substrate processing using the first chemical liquid is an etching process to flatten the top surface of the substrate W, if the supply time of the first chemical liquid to the substrate W is longer than the first predetermined time T1, the thickness of the substrate W may become thinner than the target thickness. Therefore, the characteristics of a device manufactured using the substrate W may not be the desired characteristics.

Furthermore, if the substrate W is a patterned wafer and the substrate processing with the first chemical liquid is an etching process to remove a native oxide film, if the supply time of the first chemical liquid to the substrate W is longer than the length of the first predetermined time T1, the silicon oxide film constituting the pattern may become too thin, and the characteristics of the device manufactured using the substrate W may not be as desired. Furthermore, if the silicon oxide film constituting the pattern becomes too thin, the pattern may easily collapse.

Furthermore, if metal wiring is exposed at the bottom of the pattern grooves, the first chemical liquid removes the native oxide film covering the metal wiring. However, if the supply time of the first chemical liquid to the substrate W is longer than the first predetermined time T1, the metal wiring may be etched, and the electrical characteristics of the device manufactured using the substrate W may not be as desired.

According to this embodiment, the supply time of the first chemical liquid to the substrate W can be prevented from increasing due to the first delay time DT1, so the supply time of the first chemical liquid to the substrate W is less likely to become longer than the length of the first predetermined time T1. Therefore, for example, the occurrence of defects such as those described above can be prevented.

Note that when the first substrate processing is performed, the timing of sending the open signal to the first valve VA1 cannot be adjusted using the start delay time SDT. Therefore, the first substrate W may be a dummy wafer.

Embodiments of the present invention have been described above with reference to the drawings (Figs. 1 to 22). However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

The drawings primarily show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual configuration due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within the scope of not substantially departing from the effects of the present invention.

Next, we will explain modified examples of the embodiments (embodiments 1 to 4) described with reference to Figures 1 to 22.

(1) In the embodiment described with reference to FIGS. 1 to 22, the imaging device 110 detected that the treatment liquid (first rinse liquid, second rinse liquid, and second chemical liquid, or first chemical liquid, first rinse liquid, second rinse liquid, and second chemical liquid) was ejected from the outlet (second outlet 42a to fourth outlet 44a, or first outlet 41a to fourth outlet 44a) of the nozzle (second nozzle 42 to fourth nozzle 44, or first nozzle 41 to fourth nozzle 44). However, if the member (material) constituting the nozzle is a transparent member (transparent material), the imaging device 110 may detect that the treatment liquid has reached the outlet of the nozzle as the start of ejection of the treatment liquid.

Figure 23 is a diagram showing a first modified example of the substrate processing apparatus 100 according to the embodiment described with reference to Figures 1 to 22. Specifically, Figure 23 shows an image SG captured when the first rinse liquid reaches the second outlet 42a. As shown in Figure 23, if the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the imaging device 110 can detect that the first rinse liquid has reached the outlet (second outlet 42a) of the second nozzle 42.

When detecting that the first rinse liquid has reached the outlet of the second nozzle 42, the first image processing area KA1 may be set to an area that captures the second nozzle 42 from its base end to its tip. The horizontal width of the first image processing area KA1 may be set to be wider than the width of the second nozzle 42. The vertical length of the first image processing area KA1 may be set to be approximately the same as the length of the second nozzle 42. The other image processing areas KA (second image processing area to fourth image processing area) are also set in the same manner as the first image processing area KA1.

(2) In the embodiment described with reference to FIGS. 1 to 22, the imaging device 110 detected that the processing liquid (first rinse liquid, second rinse liquid, and second chemical liquid, or first chemical liquid, first rinse liquid, second rinse liquid, and second chemical liquid) was ejected from the outlet (second outlet 42a to fourth outlet 44a, or first outlet 41a to fourth outlet 44a) of the nozzle (second nozzle 42 to fourth nozzle 44, or first nozzle 41 to fourth nozzle 44). However, if the member (material) constituting the nozzle is a transparent member (transparent material), the imaging device 110 may detect that the processing liquid has reached the vicinity RL of the nozzle outlet as the start of ejection of the processing liquid.

Figure 24 is a diagram showing a second modified example of the substrate processing apparatus 100 according to the embodiment described with reference to Figures 1 to 22. Specifically, Figure 24 shows an image SG captured when the first rinse liquid reaches the vicinity RL of the second outlet 42a. As shown in Figure 24, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the imaging device 110 can detect that the first rinse liquid has reached the vicinity RL of the outlet (second outlet 42a) of the second nozzle 42. Here, the vicinity RL of the second outlet 42a indicates, for example, a range from the tip (second outlet 42a) of the second nozzle 42 that is approximately the same as the range L from the tip to the base end of the second nozzle 42, or a range narrower toward the tip of the second nozzle 42. The vicinity RL of the other outlets (first outlet 41a, third outlet 43a, and fourth outlet 44a) is similar to the vicinity RL of the second outlet 42a.

When detecting that the first rinse liquid has reached the vicinity RL of the outlet of the second nozzle 42, the first image processing area KA1 may be set to an area that captures the second nozzle 42 from its base end to its tip. The other image processing areas KA (second image processing area to fourth image processing area) are also set in the same manner as the first image processing area KA1.

(3) In the embodiment described with reference to Figures 1 to 22, the substrate processing apparatus 100 includes an imaging device 110 as a detection unit. However, the detection unit is not limited to the imaging device 110 as long as it can detect the start of dispensing of the processing liquid. For example, the substrate processing apparatus 100 may include a photosensor 120 as a detection unit.

Figure 25 is a diagram showing a third modified example of the substrate processing apparatus 100 according to the embodiment described with reference to Figures 1 to 22. The substrate processing apparatus 100 shown in Figure 25 includes a photosensor 120 as a detection unit. Specifically, the substrate processing apparatus 100 includes three photosensors 120. The three photosensors 120 include a photosensor 120 provided for the second nozzle 42, a photosensor 120 provided for the third nozzle 43, and a photosensor 120 provided for the fourth nozzle 44. Figure 25 shows the photosensor 120 provided for the second nozzle 42. Hereinafter, the photosensor 120 provided for the second nozzle 42 may be referred to as "photosensor 121."

As shown in FIG. 25, the photosensor 121 irradiates light onto the area below the second nozzle 42, which is positioned in the standby position, and receives light reflected from the area below the second nozzle 42. Therefore, as the first rinse liquid is ejected from the outlet (second outlet 42a) of the second nozzle 42 and passes through the area below the second nozzle 42, the light received by the photosensor 121 changes. Therefore, the photosensor 121 can detect that the first rinse liquid has been ejected from the outlet of the second nozzle 42.

Like photosensor 121, photosensor 120 provided for third nozzle 43 also detects that the second rinse liquid has been discharged from the outlet (third outlet 43a) of third nozzle 43. Like photosensor 121, photosensor 120 provided for fourth nozzle 44 also detects that the second chemical liquid has been discharged from the outlet (fourth outlet 44a) of fourth nozzle 44 located at the processing position. Furthermore, photosensor 120 provided for fourth nozzle 44 may detect that the first chemical liquid has been discharged from the outlet (first outlet 41a) of first nozzle 41 located at the processing position, similar to the imaging device 110 described in embodiment 2.

Note that, similar to the imaging device 110 described with reference to FIG. 23, the photosensor 120 may detect that the processing liquid (first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid) has reached the nozzle outlets (first outlets 41a to fourth outlets 44a) when the member (material) constituting the nozzles (first nozzle 41 to fourth nozzle 44) is a transparent member (transparent material). Alternatively, similar to the imaging device 110 described with reference to FIG. 24, the photosensor 120 may detect that the processing liquid (first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid) has reached the vicinity RL of the nozzle outlets (first outlets 41a to fourth outlets 44a) when the member (material) constituting the nozzles (first nozzle 41 to fourth nozzle 44) is a transparent member (transparent material).

Figure 26 is a diagram showing a fourth modified example of the substrate processing apparatus 100 according to the embodiment described with reference to Figures 1 to 22. As shown in Figure 26, if the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the photosensor 121 may irradiate light onto the vicinity RL of the second outlet 42a and receive reflected light from the vicinity RL of the second outlet 42a. If the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the light received by the photosensor 121 changes as the first rinse liquid passes through the vicinity RL of the second outlet 42a. Therefore, the photosensor 121 can detect that the first rinse liquid has reached the vicinity RL of the outlet of the second nozzle 42.

The photosensor 120 provided for the third nozzle 43 may also detect that the second rinse liquid has reached the vicinity RL of the third outlet 43a, similar to the photosensor 121. The photosensor 120 provided for the fourth nozzle 44 may also detect that the second chemical liquid has reached the vicinity RL of the fourth outlet 44a, similar to the photosensor 121. Furthermore, the photosensor 120 provided for the fourth nozzle 44 may detect that the first chemical liquid has reached the vicinity RL of the first outlet 41a.

(4) In the embodiment described with reference to Figures 1 to 22, the substrate processing apparatus 100 includes an imaging device 110 as a detection unit. However, the substrate processing apparatus 100 may also include a capacitance sensor 130 as a detection unit.

Figures 27 and 28 are diagrams showing a fifth modified example of the substrate processing apparatus 100 according to the embodiment described with reference to Figures 1 to 22. The substrate processing apparatus 100 shown in Figures 27 and 28 includes a capacitance sensor 130 as a detection unit. The capacitance sensor 130 generates an electric field in the detection area and detects the detection target based on a change in capacitance when the detection target enters the electric field.

More specifically, the substrate processing apparatus 100 is equipped with three capacitance sensors 130. The three capacitance sensors 130 include a capacitance sensor 130 installed in the second nozzle 42, a capacitance sensor 130 installed in the third nozzle 43, and a capacitance sensor 130 installed in the fourth nozzle 44. Figures 27 and 28 show the capacitance sensor 130 installed in the second nozzle 42. Hereinafter, the capacitance sensor 130 installed in the second nozzle 42 may be referred to as the "capacitance sensor 131."

As shown in Figures 27 and 28, the capacitance sensor 131 is installed in the vicinity RL of the second outlet 42a. The capacitance sensor 131 generates an electric field in the vicinity RL of the second outlet 42a. Therefore, the capacitance sensor 131 detects the first rinse liquid as it passes through the vicinity RL of the second outlet 42a. Therefore, the capacitance sensor 131 can detect that the first rinse liquid has reached the vicinity RL of the second outlet 42a.

Like the capacitance sensor 131, the capacitance sensor 130 installed in the third nozzle 43 is also installed in the vicinity RL of the third outlet 43a and detects that the second rinse liquid has reached the vicinity RL of the third outlet 43a. Like the capacitance sensor 131, the capacitance sensor 130 installed in the fourth nozzle 44 is also installed in the vicinity RL of the fourth outlet 44a and detects that the second chemical liquid has reached the vicinity RL of the fourth outlet 44a.

The substrate processing apparatus 100 may further include a capacitance sensor 130 installed in the first nozzle 41. Like the capacitance sensor 131, the capacitance sensor 130 installed in the first nozzle 41 is installed in the vicinity RL of the first discharge port 41a and detects that the first chemical liquid has reached the vicinity RL of the first discharge port 41a.

(5) In the embodiment described with reference to Figures 1 to 22, a clamping chuck that clamps the substrate W was described as the configuration for holding the substrate W. However, the configuration for holding the substrate W is not particularly limited as long as it can hold the substrate W horizontally. For example, the substrate holder 3 may be a vacuum chuck or a Bernoulli chuck.

(6) In the embodiment described with reference to Figures 1 to 22, the second nozzle 42 moves from the standby position to the processing position, but the second nozzle 42 does not have to move from the standby position to the processing position. In other words, the second nozzle 42 may supply the first rinse liquid to the substrate W from the standby position.

(7) In the embodiment described with reference to Figures 1 to 22, the imaging device 110 is disposed outside the processing chamber 2, but the imaging device 110 may also be disposed inside the processing chamber 2.

(8) In the embodiment described with reference to FIGS. 1 to 22, the control unit 102 performs timing, but the substrate processing apparatus 100 may also include a timer circuit. In this case, the control unit 102 causes the timer circuit to perform timing. The timer circuit may also be provided in the control device 101.

(9) In the embodiment described with reference to Figures 1 to 22, the substrate processing apparatus 100 is equipped with one imaging device 110, but the substrate processing apparatus 100 may be equipped with multiple imaging devices 110.

The present invention is useful for a substrate processing apparatus and a substrate processing method. Therefore, the present invention has industrial applicability.

2: Processing chamber 3: Substrate holder 41: First nozzle 41a: First outlet 42: Second nozzle 42a: Second outlet 43: Third nozzle 43a: Third outlet 44: Fourth nozzle 44a: Fourth outlet 100: Substrate processing apparatus 102: Control unit 110: Imaging device 120: Photosensor 121: Photosensor 130: Capacitance sensor 131: Capacitance sensor ADT: Additional delay time DT1: First delay time DT2: Second delay time DT3: Third delay time DT4: Fourth delay time RL: Proximity SDT: Start delay time T1: First predetermined time T2: Second predetermined time T3: Third predetermined time T4: Fourth predetermined time T5: Fifth predetermined time VA1: First valve VA2: Second valve VA3 : Third valve VA4 : Fourth valve W : Substrate

Claims (23)

A substrate processing method for processing a substrate with a processing liquid, comprising:
holding the substrate;
a step of starting to supply the preceding processing liquid to the preceding nozzle and discharging the preceding processing liquid from a discharge port of the preceding nozzle toward the held substrate;
a step of starting to supply a subsequent processing liquid to a subsequent nozzle and discharging the subsequent processing liquid from a discharge port of the subsequent nozzle toward the held substrate;
a detection step of detecting the start of ejection of the following processing liquid from the ejection port of the following nozzle;
a stopping step of stopping the supply of the preceding processing liquid to the preceding nozzle in response to detection of the start of the discharge of the following processing liquid. The substrate processing method of claim 1, wherein the detection step detects that the subsequent processing liquid has been ejected from the ejection port of the subsequent nozzle. The substrate processing method of claim 1, wherein the detection step detects that the trailing processing liquid has reached the outlet of the trailing nozzle. The substrate processing method of claim 1, wherein the detection step detects that the trailing processing liquid has reached the vicinity of the discharge port of the trailing nozzle. The substrate processing method according to any one of claims 2 to 4, wherein the detection step detects the start of the discharge of the subsequent processing liquid using an imaging device. The substrate processing method according to any one of claims 2 to 4, wherein the detection step detects the start of the discharge of the subsequent processing liquid using a photosensor. The substrate processing method of claim 4, wherein the detection step detects the start of the discharge of the subsequent processing liquid using a capacitance sensor. A substrate processing method according to any one of claims 1 to 7, wherein in the stopping step, the supply of the preceding processing liquid to the preceding nozzle is stopped a predetermined time after the start of the ejection of the following processing liquid is detected. The substrate processing method according to any one of claims 1 to 8, further comprising a step of adjusting the timing of starting the supply of the preceding processing liquid based on a supply time indicating the time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid in the stopping step, and a predetermined time that determines the time interval for supplying the preceding processing liquid. The substrate processing method according to any one of claims 1 to 9, further comprising a step of acquiring the timing for stopping the supply of the preceding processing liquid. The substrate processing method according to any one of claims 1 to 10, further comprising a step of detecting the start of ejection of the preceding processing liquid from the ejection port of the preceding nozzle. A substrate processing apparatus for processing a substrate with a processing liquid,
a substrate holder for holding the substrate;
a preceding nozzle having a discharge port and configured to discharge a preceding processing liquid from the discharge port toward the substrate held by the substrate holding unit;
a preceding valve that controls supply of the preceding processing liquid to the preceding nozzle and stop of supply of the preceding processing liquid to the preceding nozzle;
a trailing nozzle having a discharge port and configured to discharge a trailing processing liquid from the discharge port toward the substrate held by the substrate holding unit;
a trailing valve that controls the supply of the trailing processing liquid to the trailing nozzle and the stop of the supply of the trailing processing liquid to the trailing nozzle;
a detection unit that detects the start of ejection of the following processing liquid from the ejection port of the following nozzle;
a control unit that controls the preceding valve to start supplying the preceding processing liquid to the preceding nozzle, and then controls the following valve to start supplying the following processing liquid to the following nozzle,
The control unit executes a closing operation control process to control the preceding valve to stop the supply of the preceding processing liquid in response to the detection unit detecting the start of the discharge of the following processing liquid. The substrate processing apparatus of claim 12, wherein the detection unit detects that the trailing processing liquid has been ejected from the ejection port of the trailing nozzle. The substrate processing apparatus of claim 12, wherein the detection unit detects when the trailing processing liquid has reached the outlet of the trailing nozzle. The substrate processing apparatus of claim 12, wherein the detection unit detects that the trailing processing liquid has reached the vicinity of the outlet of the trailing nozzle. The substrate processing apparatus according to any one of claims 13 to 15, wherein the detection unit includes an imaging device that detects the start of the discharge of the subsequent processing liquid. The substrate processing apparatus according to any one of claims 13 to 15, wherein the detection unit includes a photosensor that detects the start of the discharge of the subsequent processing liquid. The substrate processing apparatus of claim 15, wherein the detection unit includes a capacitance sensor that detects the start of the discharge of the subsequent processing liquid. The substrate processing apparatus of any one of claims 12 to 18, wherein the control unit controls the preceding valve to stop the supply of the preceding processing liquid after a predetermined time has elapsed since the detection unit detected the start of the discharge of the following processing liquid. A substrate processing apparatus according to any one of claims 12 to 19, wherein the control unit adjusts the timing for starting the supply of the preceding processing liquid based on a supply time indicating the time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid due to the closing operation control process, and a predetermined time that determines the time interval for supplying the preceding processing liquid. A substrate processing apparatus according to any one of claims 12 to 20, wherein the control unit acquires the timing for stopping the supply of the preceding processing liquid. The substrate processing apparatus of any one of claims 12 to 21, wherein the detection unit detects the start of ejection of the preceding processing liquid from the ejection port of the preceding nozzle. a plurality of processing chambers each accommodating the substrate holder, the leading nozzle, and the trailing nozzle;
The substrate processing apparatus according to claim 12 , wherein the control unit executes the closing operation control process for each of the processing chambers.