JP7777008B2 - Electrostatic Chuck Device - Google Patents

Description

The present invention relates to an electrostatic chuck device.

When manufacturing semiconductor integrated circuits using semiconductor wafers, or when manufacturing liquid crystal panels using insulating substrates such as glass substrates or films, it is necessary to hold the substrate, such as the semiconductor wafer, glass substrate, or insulating substrate, at a predetermined location by suction. To hold these substrates, mechanical chucks and vacuum chucks have been used. However, these holding methods have had issues, such as difficulty in holding the substrate (object to be held) evenly, inability to be used in a vacuum, and excessive temperature rise on the substrate surface. Therefore, in recent years, electrostatic chuck devices, which can solve these problems, have been used to hold objects to be held.

The electrostatic chuck device primarily comprises a conductive support member that serves as the internal electrode and a dielectric layer made of a dielectric material that covers the support member. This main component is capable of attracting an object to be attracted. When a voltage is applied to the internal electrode within the electrostatic chuck device, creating a potential difference between the object to be attracted and the conductive support member (internal electrode), an electrostatic attraction force is generated in the dielectric layer. This allows the object to be supported in a substantially flat manner relative to the conductive support member. Furthermore, by forming multiple uneven portions on the attraction surface of the electrostatic chuck device and attracting the object to the surface formed by the upper surfaces of these multiple uneven portions, particles are prevented from adhering to the object to be attracted when fine unevenness is formed on the attraction surface of the dielectric layer by thermal spraying.

Conventionally, it is known to perform a dimple processing method in which the surface of a ceramic dielectric layer that serves as the adsorption surface is thinly scraped away in parts to create numerous irregularities (see, for example, Patent Document 1). In Patent Document 1, an 8 mm wide outer periphery of the surface and multiple regularly arranged 4 mm diameter circular areas are masked, and the remaining area is subjected to a blasting process, scraping away a depth of 20 μm to create steps, thereby preventing particles from adhering to the adsorption surface when the ceramic is thermally sprayed.

The larger the contact area between the silicon wafer and the electrostatic chuck device, the more particles there are on the backside of the silicon wafer. Therefore, to reduce the contact area between the silicon wafer and the electrostatic chuck device, it is known to form multiple uneven portions on the attracting surface of the electrostatic chuck device (see, for example, Patent Document 2). In Patent Document 2, the attracting surface is masked with a predetermined pattern, and then blasted to form the multiple uneven portions.

It is also known to mask the surface of the workpiece (object to be adsorbed) with a masking material having openings in a predetermined pattern, and then spray a thermal spray material through the masking material to pattern the thermal sprayed film (see, for example, Patent Document 3).

Japanese Patent Application Laid-Open No. 2003-264223 Japanese Patent Application Laid-Open No. 2007-201068 JP 2017-177029 A

As described in Patent Documents 1 to 3, when a sprayed film having fine irregularities is formed on the attracting surface of an electrostatic chuck device by thermal spraying, the following problems arise.
The ceramic particles that can be used for thermal spraying are limited to relatively large particles with an average primary particle size of several tens of microns or more. As a result, the unevenness formed by thermal spraying has many voids, which causes problems such as poor plasma resistance and poor adhesion to the base.
When forming unevenness by thermal spraying, ceramic particles must be layered multiple times, which presents a problem of time-consuming processing. Since the film thickness that can be created with one thermal spraying is 2 to 3 μm, forming protrusions 30 μm high requires about 20 thermal sprayings, which results in poor work efficiency. Furthermore, since the surface of the thermal sprayed film is polished after formation, it needs to be formed thicker than the desired thickness.

The present invention was made in consideration of the above circumstances, and aims to provide an electrostatic chuck device with protrusions that have excellent plasma resistance and high adhesion.

The present invention has the following aspects.
[1] An electrostatic chuck device having a plurality of convex portions on an attraction surface, wherein the convex portions have a ceramic film and a ceramic layer containing a resin binder, the ceramic film contains ceramic particles and a metal oxide, and at least some of the ceramic particles are bonded to each other via the metal oxide.
[2] The electrostatic chuck device according to [1], wherein the ceramic particles are at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide.
[3] The electrostatic chuck device according to [1] or [2], characterized in that the average primary particle diameter of the ceramic particles is 0.1 μm or less and 50 μm or less.
[4] The electrostatic chuck device according to any one of [1] to [3], wherein the metal oxide is a metal oxide obtained by heat-treating an organometallic compound to decompose and remove organic components and oxidize a metal constituting the organometallic compound.
[5] The electrostatic chuck device according to [4], wherein the metal constituting the organometallic compound is at least one selected from the group consisting of aluminum, yttrium, and magnesium.

The present invention provides an electrostatic chuck device with protrusions that have excellent plasma resistance and high adhesion.

1 is a schematic cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention. 2 is a schematic cross-sectional view showing a convex portion constituting an electrostatic chuck device according to an embodiment of the present invention. FIG. 1 is a schematic cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention. 1 is a schematic cross-sectional view showing an electrostatic chuck device according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing a mask sheet for forming convex portions.

Embodiments of an electrostatic chuck device according to the present invention will be described below with reference to the drawings. Note that the drawings used in the following description show enlarged views of key features for convenience, and the dimensional proportions of each component may differ from the actual dimensions. Furthermore, the materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not limited to them. Appropriate changes can be made without departing from the spirit of the present invention.

[Electrostatic chuck device]
An electrostatic chuck device according to one embodiment of the present invention is an electrostatic chuck device having a plurality of protrusions on an attraction surface, wherein the protrusions have a ceramic film and a ceramic layer containing a resin binder, the ceramic film contains ceramic particles and a metal oxide, and the ceramic particles are at least partially bonded together via the metal oxide.

An electrostatic chuck device according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG.
1 is a schematic cross-sectional view showing an electrostatic chuck device according to the present embodiment, and FIG. 2 is a schematic cross-sectional view showing a protrusion that constitutes the electrostatic chuck device according to the present embodiment.
1 includes a base 11, an electrode 12, a ceramic layer 13, and a protrusion 14. The electrode 12 is formed on one surface (top surface) 11a of the base 11. The ceramic layer 13 is formed on the one surface 11a of the base 11 so as to cover the electrode 12, i.e., so as to cover one surface (top surface) 12a and a side surface 12b of the electrode 12. The protrusion 14 is formed on one surface (top surface) 13a of the ceramic layer 13.
The protrusion 14 also includes a ceramic layer 15 and a ceramic film 16. The ceramic layer 15 is formed on one surface 13a of the ceramic layer 13, and the ceramic film 16 is formed so as to cover one surface (top surface) 15a and a side surface 15b of the ceramic layer 15.
One surface (upper surface, front surface) 16 a of the protrusion 14 is the attraction surface of the electrostatic chuck device 10 .

<Base 11>
The base 11 is not particularly limited, but examples thereof include a ceramic base, a silicon carbide base, and a metal base made of aluminum, stainless steel, or the like.

<Electrode 12>
The electrode 12 is not particularly limited as long as it is made of a conductive material that can generate an electrostatic adsorption force when a voltage is applied. Suitable examples of the electrode 12 include thin films made of metals such as copper, aluminum, gold, silver, platinum, chromium, nickel, and tungsten, and thin films made of at least two metals selected from the group of metals mentioned above. Examples of such metal thin films include those formed by vapor deposition, plating, sputtering, and the like, and those formed by applying and drying a conductive paste. A specific example of the electrode 12 is a metal foil such as copper foil.

The electrode 12 may be a monopole consisting of a single layer, or a bipole divided into two or more parts. The electrode pattern or shape of the electrode 12 is not particularly limited. The arrangement of the electrode 12 can be designed as appropriate.

The thickness of the electrode 12 is not particularly limited. The thickness of the electrode 12 is preferably 1 μm or more and 100 μm or less, and more preferably 3 μm or more and 20 μm or less. If the thickness of the electrode 12 is equal to or greater than the lower limit, unevenness is less likely to occur on one surface (upper surface) 12a of the electrode 12 when the ceramic layer 13 is formed to cover the electrode 12. If the thickness of the electrode 12 is equal to or less than the upper limit, sufficient bonding strength can be obtained between the electrode 12 and other layers.

<Ceramic layer 13>
The ceramic layer 13 is made of a sintered ceramic body or a sprayed ceramic body.
The material constituting the ceramic sintered body and the ceramic spray body is not particularly limited, and examples thereof include boron nitride, aluminum nitride, zirconium oxide, silicon oxide, tin oxide, indium oxide, quartz glass, soda glass, lead glass, borosilicate glass, zirconium nitride, titanium oxide, etc. These materials may be used alone or in combination of two or more.

The average primary particle size of the material that makes up the ceramic sintered body and the ceramic spray-coated body is preferably 1 μm or more and 25 μm or less. When the average primary particle size of the material is within this range, the voids in the ceramic sintered body and the ceramic spray-coated body can be reduced, improving the voltage resistance of the ceramic sintered body and the ceramic spray-coated body.

The average primary particle size of the materials that make up ceramic sintered bodies and ceramic sprayed bodies can be measured using laser diffraction/scattering methods, etc.

The thickness of the ceramic layer 13 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 100 μm or less. If the thickness of the ceramic layer 13 is less than 5 μm, sufficient plasma resistance will not be obtained. If the thickness of the ceramic layer 13 exceeds 200 μm, thermal conductivity will decrease.

<Convex portion 14>
The ceramic layer 15 contains ceramic particles and a resin binder.
As the ceramic particles constituting the ceramic layer 15, ceramic particles having the shapes and materials exemplified for the ceramic layer 13 can be used.
Since the ceramic layer 15 is a resin layer containing ceramic particles and a resin binder, the resin binder provides high adhesion and a high withstand voltage electrostatic chuck device.

The average primary particle size of the ceramic particles constituting the ceramic layer 15 is preferably 0.1 μm or more and 50 μm or less, more preferably 0.1 μm or more and 10 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. When the average primary particle size of the ceramic particles is within the above range, a film can be formed using small particle size particles, and the ceramic particles become denser, thereby providing an electrostatic chuck device with high adhesion and good thermal conductivity.
The average primary particle size of the ceramic particles that make up the ceramic layer 15 can be measured by a laser diffraction/scattering method.

Examples of the resin binder in the ceramic layer 15 include one or more resins selected from epoxy resins, phenolic resins, styrene-based block copolymers, polyamide resins, polyacrylamide resins, acrylic resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, and the like.
The ceramic layer 15 can contain 100 to 10,000 parts by mass, preferably 300 to 4,000 parts by mass, and more preferably 500 to 2,000 parts by mass of ceramic particles per 100 parts by mass of resin binder.

The thickness of the ceramic layer 15 is not particularly limited. The thickness of the ceramic layer 15 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 100 μm or less. When the thickness of the ceramic layer 15 is equal to or greater than the lower limit, insulation properties can be ensured. When the thickness of the ceramic layer 15 is equal to or less than the upper limit, sufficient adhesive force is generated by the electrode 12.

The ceramic film 16 is composed of a ceramic composition containing a plurality of ceramic particles 21 and a plurality of metal oxides 22. In the electrostatic chuck device 10 of this embodiment, at least some of the ceramic particles 21 are bonded to one another via the metal oxides 22. That is, as shown in FIG. 2, one ceramic particle 21 (21A) included in the ceramic film 16 is bonded to another ceramic particle 21 via the metal oxides 22. Also, one ceramic particle 21 (21C) included in the ceramic film 16 is bonded to another ceramic particle 21 (21B) via the metal oxides 22 (22A). Also, one ceramic particle 21 (21B) included in the ceramic film 16 is bonded to another ceramic particle 21 via the metal oxides 22 (22B). One ceramic particle 21 may be in contact with one or more metal oxides 22 and may be bonded to one or more other ceramic particles 21 via the respective metal oxides 22. Also, a ceramic particle 21 may be in contact with other ceramic particles 21.

The thickness of the ceramic film 16 (height based on one surface 15a of the ceramic layer 15) is preferably 1 μm or more and 80 μm or less, and more preferably 5 μm or more and 50 μm or less. When the thickness of the ceramic film 16 is equal to or greater than the lower limit, sufficient plasma resistance and voltage resistance are exhibited. When the thickness of the ceramic film 16 is equal to or less than the upper limit, sufficient adsorption force is generated.

The arithmetic mean roughness (Ra) of the surface (upper surface) 16a of the ceramic film 16 is preferably 0.05 μm or more and 0.5 μm or less. When the arithmetic mean roughness (Ra) of the surface 16a of the ceramic film 16 is within this range, the adsorbate can be adsorbed well. As the arithmetic mean roughness (Ra) of the surface 16a of the ceramic film 16 increases, the contact area between the adsorbate and the ceramic film 16 decreases, and therefore the adsorption force also decreases.

The arithmetic mean roughness (Ra) of the surface 16a of the ceramic film 16 can be measured in accordance with the method specified in JIS B0601-1994.

The ratio of the ceramic particles 21 to the metal oxide 22 in the ceramic film 16 is preferably 80:20 to 98:2 by mass, and more preferably 90:10 to 96:4 by mass. When the ratio of the ceramic particles 21 to the metal oxide 22 is within this range, the ceramic particles 21 can be well bonded together by the metal oxide 22.

<Ceramic particles 21>
The ceramic particles 21 are not particularly limited.
Examples of the shape of the ceramic particles 21 include spherical, spherical, amorphous, needle-like, fibrous, and plate-like shapes. The ceramic particles 21 having these shapes may be used alone or in combination of two or more.

Examples of materials for the ceramic particles 21 include ceramic particles composed primarily of oxide ceramics, non-oxide ceramics, and composite ceramics of these.

Examples of oxide ceramics include alumina (aluminum oxide, Al ₂ O ₃ ), zirconia (zirconium oxide, ZrO ₂ ), yttria (yttrium oxide, Y ₂ O ₃ ), talc (hydrous magnesium silicate, Mg ₃ Si ₄ O ₁₀ (OH) ₁₀ ), hematite (iron (III) oxide, Fe ₂ O ₃ ), chromia (chromium (III) oxide, Cr ₂ O ₃ ), titania (titanium (IV) oxide, Ti ₂ O), magnesia (magnesium oxide, MgO), silica (silicon dioxide, SiO ₂ ), calcia (calcium oxide, CaO), ceria (cerium (IV) oxide, CeO ₂ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), steatite (magnesium metasilicate, MgO.SiO ₂ ), cordierite (2MgO.2Al _{2O3.5SiO2 )} , mullite ( _{3Al2O3.2SiO2 )} , ferrite ( _MnFe2O4 ), spinel ( _{MgAl2O4 )} , zircon ( _{ZrSiO4 )} , barium titanate ( _BaTiO3 ), lead titanate ( _PbTiO3 ), _forsterite ( _Mg2SiO4 ), phosphorus-doped tin oxide ( _PTO ), _antimony -doped tin oxide (ATO), tin-doped indium oxide (ITO), and the like.
The oxide ceramics may be used alone or in combination of two or more.

Examples of non-oxide ceramics include nitride ceramics, carbide ceramics, boride ceramics, silicide ceramics, and phosphate compounds.
Examples of nitride ceramics include boron nitride (BN), titanium nitride (TiN), silicon nitride (Si ₃ N ₄ ), gallium nitride (GaN), aluminum nitride (AlN), carbon nitride (CN _x ), and sialon (Si ₃ N ₄ —AlN—Al ₂ O ₃ solid solution).
Examples of carbide ceramics include tungsten carbide (WC), chromium carbide (CrC), vanadium carbide (VC), niobium carbide (NbC), molybdenum carbide (MoC), tantalum carbide (TaC), titanium carbide (TiC), zirconium carbide (ZrC), hafnium carbide (HfC), silicon carbide (SiC), and boron carbide (B ₄ C).
Examples of boride ceramics include molybdenum boride (MoB), chromium boride (CrB ₂ ), hafnium boride (HfB ₂ ), zirconium boride (ZrB ₂ ), tantalum boride (TaB ₂ ), and titanium boride (TiB ₂ ).
Examples of silicide ceramics include zirconium oxide silicate, hafnium oxide silicate, titanium oxide silicate, lanthanum oxide silicate, yttrium oxide silicate, titanium oxide silicate, tantalum oxide silicate, and tantalum oxynitride silicate.
Examples of the phosphate compound include hydroxyapatite and calcium phosphate.
The non-oxide ceramics may be used alone or in combination of two or more.

The ceramic particles 21 are preferably at least one type selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide. When the ceramic particles 21 are at least one type of compound selected from the above group, plasma resistance is improved.

The average primary particle diameter of the ceramic particles 21 is preferably 0.1 μm or more and 50 μm or less, more preferably 0.1 μm or more and 10 μm or less, and even more preferably 0.1 μm or more and 1 μm or less. When the average primary particle diameter of the ceramic particles 21 is within this range, the voids in the protrusions 14 are reduced, improving the voltage resistance of the protrusions 14.

The average primary particle size of the ceramic particles 21 can be measured using a laser diffraction/scattering method.

The content of ceramic particles 21 in the ceramic film 16 is preferably 80% by mass or more and 98% by mass or less, and more preferably 90% by mass or more and 96% by mass or less, based on the total mass of the ceramic film 16 (100% by mass). If the content of ceramic particles 21 is less than the lower limit, the viscosity will be too low, making it difficult to form dots by mask printing. If the content of ceramic particles 21 exceeds the upper limit, the ceramic particles 21 will not bond together easily, making chipping more likely.

<Metal oxide 22>
The metal oxide 22 is a metal oxide obtained by heat treating an organometallic compound (Metal Organic Compound) to decompose and remove organic components and oxidize the metals that make up the organometallic compound.
Examples of the metal oxide 22 include oxides of gold, silver, platinum, palladium, iridium, rhodium, ruthenium, lead, bismuth, silicon, chromium, cobalt, nickel, iron, boron, antimony, cadmium, vanadium, aluminum, calcium, magnesium, manganese, zinc, zirconium, barium, strontium, yttrium, and lanthanum.
Specific examples of the metal oxide 22 include aluminum oxide, yttrium oxide, magnesium oxide, nickel oxide, and zinc oxide.
The metal oxide 22 may be used singly or in combination of two or more kinds.

The metal oxide 22 is preferably at least one selected from the group consisting of aluminum oxide, yttrium oxide, and magnesium oxide. That is, _the metal oxide 22 is preferably alumina (aluminum oxide, _Al2O3 ), yttria (yttrium oxide, _Y2O3 ), or magnesia (magnesium oxide, MgO). When _the metal oxide 22 is yttria (yttrium oxide, _Y2O3 ) or _magnesia (magnesium oxide, MgO), plasma resistance is further improved.

The content of metal oxide 22 in ceramic film 16 is preferably 2% by mass or more and 20% by mass or less, and more preferably 4% by mass or more and 10% by mass or less, based on the total mass of ceramic film 16 (100% by mass). If the content of metal oxide 22 is less than the lower limit, the ceramic particles 21 will not bond together, making it difficult to ensure the strength of the protrusions. If the content of metal oxide 22 exceeds the upper limit, it will likely be difficult to form dots.

The ceramic film 16 may contain components other than the ceramic particles 21 and metal oxide 22. Examples of components other than the ceramic particles 21 and metal oxide 22 include resin. The inclusion of resin improves the strength of the protrusions and improves the withstand voltage.

The electrostatic chuck device 10 of this embodiment can provide an electrostatic chuck device that has excellent plasma resistance and high mechanical strength.

[Manufacturing Method of Electrostatic Chuck Device]
Hereinafter, a method for manufacturing an electrostatic chuck device according to this embodiment will be described with reference to FIG.

"Paint preparation process (paint preparation process)"
The method for manufacturing an electrostatic chuck device according to the present embodiment may include a paint preparation step of preparing a paint containing ceramic particles and a metal resinate.
As the ceramic particles, those described above are used.

The content of ceramic particles in the paint is preferably 20% by mass or more and 80% by mass or less, and more preferably 40% by mass or more and 70% by mass or less, based on the total mass of the paint (100% by mass). If the content of ceramic particles is below the lower limit, the strength of the protrusions will be reduced, causing chipping of the protrusions and likely causing particle generation. If the content of ceramic particles exceeds the upper limit, the viscosity of the paint will increase, making application difficult.

The metal resinate content in the paint is preferably 20% to 80% by mass, and more preferably 30% to 60% by mass, based on the total mass of the paint (100% by mass). If the metal resinate content is below the lower limit, the viscosity of the paint increases, making application difficult. If the metal resinate content exceeds the upper limit, bulk is created in the protrusions, reducing strength. This makes the protrusions more susceptible to chipping and causes particle generation.

The ratio of ceramic particles to metal resinate in the paint is preferably 2:8 to 8:2 by mass, and more preferably 4:6 to 6:4 by mass. When the ratio of ceramic particles to metal resinate is within this range, the ceramic particles can be bonded together by metal oxide.

<Metal resinate>
A metal resinate is a liquid or paste containing an organometallic compound. When a metal resinate is heat-treated, the organic components are oxidatively decomposed and removed, and the metal that constitutes the organometallic compound is oxidized, thereby producing a high-purity metal oxide. The resulting metal oxide forms an extremely thin metal film. By using a metal resinate, a metal film with a thickness of, for example, approximately 0.1 μm to 0.6 μm can be obtained. This metal film bonds at least a portion of the ceramic particles to form a ceramic film.

Metal resinates are synthesized by reacting the halides, nitrates, acetates, or oxides of the metal components listed below with carboxylic acids, polynuclear fatty acids such as abietic acid, or gum rosin containing abietic acid as the main component. Examples of carboxylic acids that can be used include aliphatic carboxylic acids, cyclic aliphatic carboxylic acids, and aromatic carboxylic acids.

Examples of metal components include gold, silver, platinum, palladium, iridium, rhodium, ruthenium, lead, bismuth, silicon, chromium, cobalt, nickel, iron, boron, antimony, cadmium, vanadium, aluminum, calcium, magnesium, manganese, zinc, zirconium, barium, strontium, yttrium, and lanthanum.
The metal components may be used alone or in combination of two or more.

<Solvent>
The coating material is preferably mixed with a solvent, such as alcohols, ketones, esters, hydrocarbons, and ethers.
Examples of alcohols include methanol, ethanol, propanol, and butanol.
Examples of ketones include methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone.
Examples of esters include ethyl acetate, propyl acetate, and butyl acetate.
Examples of hydrocarbons include toluene and xylene.
Examples of ethers include methyl cellosolve, ethyl cellosolve, butyl cellosolve, and tetrahydrofuran.

<Other ingredients>
The coating material may contain components other than the ceramic particles, metal resinate, and solvent, such as a dispersant and a surfactant.

Examples of methods for preparing the paint include stirring and mixing ceramic particles, metal resinate, and a solvent. Mixing methods that use a mixer, such as a planetary stirrer, homogenizer, high-pressure jet mill, or ultrasonic mixer, can be used.

"Step of forming electrodes (electrode formation step)"
The method for manufacturing an electrostatic chuck device according to this embodiment may include an electrode forming step of forming an electrode 12 on one surface (upper surface) 11 a of the base 11 .
In the electrode formation step, a metal thin film (metal thin film) is formed by vapor-depositing a metal such as copper on one surface 11a of the base 11. Thereafter, etching is performed to pattern the metal thin film into a predetermined shape, thereby forming the electrode 12.

"Step of forming ceramic layer 13 (ceramic layer 13 forming step)"
The method for manufacturing the electrostatic chuck device of this embodiment may include a ceramic layer 13 forming step of forming the ceramic layer 13 on one surface (upper surface) 11 a of the base 11 so as to cover the electrode 12 .

When the ceramic layer 13 is a sintered ceramic body, first, an adhesive is applied to one surface (upper surface) 11 a of the base 11 so as to cover the electrodes 12 to form an adhesive layer (not shown).
Next, a ceramic sintered body is laminated on one surface (upper surface) 11a of the base 11 via an adhesive layer so as to cover the electrode 12.

When the ceramic layer 13 is a ceramic sprayed body, the above material is sprayed onto one surface (upper surface) 11a of the base 11 so as to cover the electrode 12, forming a ceramic sprayed body. Plasma spraying, for example, is used as a method for forming a ceramic sprayed body by spraying.

"Step of forming ceramic layer 15 (ceramic layer 15 forming step)"
In the ceramic layer 15 forming step, a masking sheet having the shape of the predetermined protrusions 14 is placed on one surface (upper surface) 13a of the ceramic layer 13, and ceramic particles containing a resin binder are applied to form the ceramic layer 15. Thereafter, the masking sheet is removed, and the layer is heated, dried, and cured to obtain the ceramic layer 15 having the shape of the protrusions 14.
Since the ceramic layer 15 can be formed by coating, it is possible to produce a thick film, and it can be produced by a single coating process, which shortens the production time compared to ceramic spraying or ceramic sintering.

Examples of methods for applying the above slurry include coating methods using coating devices such as spray, gravure coater, roll coater, blade coater, air knife coater, and rod coater, dip coating, and printing methods such as offset printing and screen printing.

The thickness of the slurry coating film is preferably 1 μm or more and 200 μm or less, and more preferably 10 μm or more and 50 μm or less. When the coating film thickness is equal to or greater than the lower limit, the ceramic layer obtained after the heating process exhibits sufficient plasma resistance and voltage resistance. When the coating film thickness is equal to or less than the upper limit, the ceramic layer obtained after the heating process generates sufficient adsorption force.

Heating methods for the slurry coating film include thermal heating, plasma heating, infrared heating, and lamp heating. The heating temperature and heating time for the slurry coating film are, for example, as follows: The coating film is dried by heating at 100°C to 150°C for 1 to 10 minutes to remove the solvent contained in the coating film. The coating film is then heated at 100°C to 300°C for 30 to 2 hours to obtain the ceramic layer 15.

"Ceramic film 16 coating process"
In the coating process of the ceramic film 16, the coating film is formed by applying the above-mentioned paint to one surface (top surface) 15a and the other surface (side surface) 15b of the ceramic layer 15. Specifically, the one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and the one surface (top surface) 13a of the ceramic layer 13 are coated.

Examples of coating methods that can be used include coating methods using coating equipment such as spray, gravure coater, roll coater, blade coater, air knife coater, and rod coater, as well as dip coating and printing methods such as offset printing and screen printing.

The thickness of the coating film is preferably 1 μm or more and 80 μm or less, and more preferably 5 μm or more and 50 μm or less. When the thickness of the coating film is equal to or greater than the lower limit, the ceramic film obtained after the heating process exhibits sufficient plasma resistance and voltage resistance. When the thickness of the coating film is equal to or less than the upper limit, the ceramic film obtained after the heating process generates sufficient adsorption force.

"Heating process"
In the heating step, the coating film formed on the ceramic layer 15 in the coating step is heated, thereby forming a ceramic film 16 containing the ceramic particles and metal oxide described above on one surface (upper surface) 15a of the ceramic layer 15.

Coating film heating methods include thermal, plasma, infrared, and lamp methods. By adding ultraviolet irradiation to these heating methods, organic components can be removed at lower temperatures, resulting in a metal oxide film.

The heating temperature and heating time for the coating film are, for example, as follows: The coating film is dried by heating at 100°C to 150°C for 1 to 10 minutes to remove the solvent contained in the coating film. The coating film is then heated at 500°C to 700°C for 30 to 2 hours to obtain a ceramic film. By irradiating the resinate with ultraviolet light to make the organic matter in the resinate more easily decomposed, heat treatment can also be carried out at a lower temperature (400°C or less).

The method for manufacturing an electrostatic chuck device according to this embodiment may also include a polishing step of polishing the surfaces 16a of the protrusions obtained through the heating step.
By polishing the surfaces 16a of the protrusions 14 in the polishing step so that the arithmetic mean roughness (Ra) falls within the above range, the adsorption force of the ceramic film can be improved.

The ceramic film manufacturing method of this embodiment makes it possible to provide an electrostatic chuck device with protrusions that have excellent plasma resistance and high adhesion.

<Other Embodiments>
The present invention is not limited to the above-described embodiment.

For example, an electrostatic chuck device 100 according to a first modified example as shown in FIG. 3 and an electrostatic chuck device 200 according to a second modified example as shown in FIG. 4 may be employed. Note that in the modified electrostatic chuck devices 100 and 200, the same components as those in the above embodiment are designated by the same reference numerals, and their description will be omitted, with only the differences being described.

[First Modification]
3 includes a base 11, an electrode 12, a ceramic layer 13, a protrusion 14, a first adhesive layer 110, a first insulating organic film 120, and a second adhesive layer 130. The first insulating organic film 120 is attached to one surface (top surface) 11a of the base 11 via the first adhesive layer 110. The electrode 12 is formed on one surface (top surface) 120a of the first insulating organic film 120. The ceramic layer 13 is formed on the electrode 12 via a second adhesive layer 130 formed on the one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., the one surface (top surface) 12a and the side surface 12b of the electrode 12. The protrusions 14 are formed on one surface (upper surface) 13 a of the ceramic layer 13 .

<Adhesive layer>
Examples of adhesives that constitute the first adhesive layer 110 and the second adhesive layer 130 include adhesives whose main component is at least one type of resin selected from the group consisting of epoxy resins, phenolic resins, styrene-based block copolymers, polyamide resins, acrylonitrile-butadiene copolymers, polyester resins, polyimide resins, silicone resins, amine compounds, bismaleimide compounds, and the like.

Epoxy resins include, for example, bifunctional or polyfunctional epoxy resins such as bisphenol-type epoxy resins, phenol novolac-type epoxy resins, cresol novolac-type epoxy resins, glycidyl ether-type epoxy resins, glycidyl ester-type epoxy resins, glycidylamine-type epoxy resins, trihydroxyphenylmethane-type epoxy resins, tetraglycidylphenolalkane-type epoxy resins, naphthalene-type epoxy resins, diglycidyldiphenylmethane-type epoxy resins, and diglycidylbiphenyl-type epoxy resins. Among these, bisphenol-type epoxy resins are preferred. Among bisphenol-type epoxy resins, bisphenol A-type epoxy resins are particularly preferred. Furthermore, when epoxy resins are the primary component, the adhesive can also contain, as needed, epoxy resin curing agents or curing accelerators such as imidazoles, tertiary amines, phenols, dicyandiamides, aromatic diamines, and organic peroxides.

Examples of phenolic resins include alkylphenol resins, p-phenylphenol resins, novolak phenolic resins such as bisphenol A-type phenolic resins, resol phenolic resins, and polyphenyl paraphenolic resins.

Examples of styrene-based block copolymers include styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), and styrene-ethylene-propylene-styrene copolymer (SEPS).

The thickness of the first adhesive layer 110 is not particularly limited. The thickness of the first adhesive layer 110 is preferably 1 μm or more and 100 μm or less, and more preferably 5 μm or more and 20 μm or less. If the thickness of the first adhesive layer 110 is less than the lower limit, the withstand voltage is likely to decrease. If the thickness of the first adhesive layer 110 exceeds the upper limit, thermal conduction is likely to deteriorate.

The thickness of the second adhesive layer 130 is not particularly limited. The thickness of the second adhesive layer 130 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 50 μm or less. If the thickness of the first adhesive layer 110 is less than the lower limit, the withstand voltage is likely to decrease. If the thickness of the second adhesive layer 130 exceeds the upper limit, the thermal conduction is likely to deteriorate.
The first adhesive layer 110 and the second adhesive layer 130 may be made of the same material and may have different thicknesses.

<First insulating organic film 120>
The material constituting the first insulating organic film 120 is not particularly limited, and examples thereof include polyesters such as polyethylene terephthalate, polyolefins such as polyethylene, polyimide, polyamide, polyamideimide, polyethersulfone, polyphenylene sulfide, polyetherketone, polyetherimide, triacetyl cellulose, silicone rubber, polytetrafluoroethylene, etc. Among these, polyesters, polyolefins, polyimide, silicone rubber, polyetherimide, polyethersulfone, and polytetrafluoroethylene are preferred because of their excellent insulating properties, and polyimide is more preferred. Examples of polyimide films that can be used include Kapton (trade name) manufactured by DuPont-Toray Co., Ltd. and Upilex (trade name) manufactured by Ube Industries, Ltd.

The thickness of the first insulating organic film 120 is not particularly limited. The thickness of the first insulating organic film 120 is preferably 10 μm or more and 100 μm or less, and more preferably 25 μm or more and 50 μm or less. When the thickness of the first insulating organic film 120 is equal to or greater than the lower limit, insulation properties can be ensured. When the thickness of the first insulating organic film 120 is equal to or less than the upper limit, sufficient adhesive force is generated by the electrode 12.

The first modified electrostatic chuck device 100 can provide an electrostatic chuck device with protrusions that have excellent plasma resistance and high adhesion.

[Manufacturing Method of Electrostatic Chuck Device of First Modification]
The manufacturing method of the electrostatic chuck device of the first modified example includes a step of laminating a first insulating organic film 120 on one surface (upper surface) of a base 11 via a first adhesive layer 110 (hereinafter referred to as an “insulating organic film 120 laminating step”), a step of forming an electrode 12 on one surface (upper surface) of the first insulating organic film 120 (electrode forming step), a step of forming a ceramic layer 13 on one surface (upper surface) of the electrode 12 via a second adhesive layer 130 (ceramic layer 13 forming step), a step of forming a ceramic layer 15 on one surface (upper surface) of the ceramic layer 13 (ceramic layer 15 forming step), a step of applying the above-mentioned paint to form a coating film (ceramic film 16 coating step), and a step of heating the coating film (heating step).
Hereinafter, a method for manufacturing an electrostatic chuck device according to the first modified example will be described with reference to FIG.

"Paint preparation process"
The method for manufacturing an electrostatic chuck device of this embodiment may include a paint preparation step of preparing paint containing ceramic particles and a metal resinate, similar to the method for manufacturing an electrostatic chuck device of the above-described embodiment.
The paint used is the same as that used in the manufacturing method of the electrostatic chuck device of the above embodiment.

"Insulating organic film 120 lamination process"
In the step of laminating the insulating organic film 120 , first, the above-mentioned adhesive is applied to one surface (upper surface) 11 a of the base 11 to form the first adhesive layer 110 .

Methods for applying adhesive to one surface (top surface) 11a of the base 11 include, for example, coating methods using coating devices such as gravure coaters, roll coaters, blade coaters, air knife coaters, and rod coaters, and printing methods such as offset printing and screen printing.

Next, a first insulating organic film 120 is laminated on one surface (upper surface) 11 a of the base 11 via a first adhesive layer 110 .
Thereafter, the laminate including the base 11, the first adhesive layer 110, and the first insulating organic film 120 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, thereby hardening the first adhesive layer 110.

"Electrode formation process"
In the electrode formation step, a thin metal film (metal thin film) is formed in the same manner as in the manufacturing method of the electrostatic chuck device of the above embodiment on one surface (upper surface) 120a of the first insulating organic film 120 laminated on one surface (upper surface) 11a of the base 11. Thereafter, etching is performed to pattern the thin metal film into a predetermined shape, thereby forming the electrode 12.

"Ceramic layer 13 forming process"
In the ceramic layer 13 formation process, first, the above-mentioned adhesive is applied to one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., to cover one surface (top surface) 12a and side surface 12b of the electrode 12, to form a second adhesive layer 130.

The adhesive is applied to one surface (upper surface) 120a of the first insulating organic film 120 and to the electrode 12 using a method similar to that used to form the first adhesive layer 110 described above.

Next, the ceramic layer 13 is laminated on one surface (upper surface) 120 a of the first insulating organic film 120 via the second adhesive layer 130 .
Thereafter, the laminate including the base 11, the first adhesive layer 110, the first insulating organic film 120, the electrode 12, the second adhesive layer 130 and the ceramic layer 13 is heated at a predetermined temperature for a predetermined time or left at room temperature for a predetermined time, thereby hardening the second adhesive layer 130.

"Ceramic layer 15 forming process"
In the ceramic layer 15 forming step, the ceramic layer 15 is formed on one surface (upper surface) 13a of the ceramic layer 13 in the same manner as in the method for manufacturing the electrostatic chuck device of the above-described embodiment.

"Ceramic film 16 coating process"
In the coating process of the ceramic film 16, in the same manner as in the manufacturing method of the electrostatic chuck device of the above-mentioned embodiment, the above-mentioned paint is applied to one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 13a of the ceramic layer 13 to form a coating film.

"Heating process"
In the heating process, similar to the manufacturing method of the electrostatic chuck device of the above-described embodiment, the coating film formed in the coating process on one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 13a of the ceramic layer 13 is heated to obtain the convex portion 14.

Furthermore, the manufacturing method for the electrostatic chuck device of this embodiment may include a polishing step for polishing the surface 16a of the protrusion 14, similar to the manufacturing method for the ceramic film of the above-mentioned embodiment.

The manufacturing method for the electrostatic chuck device of the first variant makes it possible to provide an electrostatic chuck device with protrusions that have excellent plasma resistance and high adhesion.

[Second Modification]
4 includes a base 11, an electrode 12, a protrusion 14, a first adhesive layer 110, a first insulating organic film 120, a second adhesive layer 130, and a second insulating organic film 210. The first insulating organic film 120 is attached to one surface (top surface) 11a of the base 11 via the first adhesive layer 110. The electrode 12 is formed on one surface (top surface) 120a of the first insulating organic film 120. The second insulating organic film 210 is formed on the one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., via a second adhesive layer 130 formed so as to cover one surface (top surface) 12a and a side surface 12b of the electrode 12. The convex portion 14 is formed on one surface (upper surface) 210 a of the second insulating organic film 210 .

<Insulating Organic Film 210>
The second insulating organic film 210 may be similar to the first insulating organic film 120 in the above-described first modified electrostatic chuck device 100. The first insulating organic film 120 and the second insulating organic film 210 may be made of the same material and may have different thicknesses.

The second modified electrostatic chuck device 200 can provide an electrostatic chuck device with excellent plasma resistance and high mechanical strength.

[Method of manufacturing electrostatic chuck device according to second modified example]
The manufacturing method of the electrostatic chuck device of the second modified example includes a step of forming an electrode 12 on one surface (upper surface) of a first insulating organic film 120 (electrode formation step), a step of laminating a second insulating organic film 210 on one surface (upper surface) of the electrode 12 via a second adhesive layer 130 (referred to as an insulating organic film 210 lamination step), a step of laminating the first insulating organic film 120 on one surface (upper surface) of a base 11 via the first adhesive layer 110 (hereinafter referred to as an "insulating organic film 120 lamination step"), a step of forming a ceramic layer 15 on one surface (upper surface) of the second insulating organic film 210 (ceramic layer 15 formation step), a step of applying the above-mentioned paint to form a coating film (ceramic film 16 coating step), and a step of heating the coating film (heating step).
Hereinafter, a method for manufacturing the electrostatic chuck device of the second modified example will be described with reference to FIG.

"Paint preparation process"
The method for manufacturing an electrostatic chuck device of this embodiment may include a paint preparation step of preparing paint containing ceramic particles and a metal resinate, similar to the method for manufacturing an electrostatic chuck device of the above-described embodiment.
The paint used is the same as that used in the manufacturing method of the electrostatic chuck device of the above embodiment.

"Electrode formation process"
In the electrode formation step, a thin metal film (metal thin film) is formed on one surface (upper surface) 120 a of the first insulating organic film 120 in the same manner as in the manufacturing method of the electrostatic chuck device of the above-described embodiment. Thereafter, etching is performed to pattern the thin metal film into a predetermined shape, thereby forming the electrode 12.

"Insulating organic film 210 lamination process"
In the insulating organic film 210 lamination process, first, the above-mentioned adhesive is applied to one surface (top surface) 120a of the first insulating organic film 120 so as to cover the electrode 12, i.e., to cover one surface (top surface) 12a and side surface 12b of the electrode 12, to form a second adhesive layer 130.

The adhesive is applied to one surface (upper surface) 120a of the first insulating organic film 120 and to the electrode 12 using a method similar to that used to form the first adhesive layer 110 described above.

Next, the second insulating organic film 210 is laminated on one surface (upper surface) 120 a of the first insulating organic film 120 via the second adhesive layer 130 .
Thereafter, the laminate including the first insulating organic film 120, the electrode 12, the second adhesive layer 130, and the second insulating organic film 210 is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, thereby hardening the second adhesive layer 130 and obtaining the laminate a.

"Insulating organic film 120 lamination process"
In the insulating organic film laminating step, the exposed surface of the first insulating organic film 120 in the laminate a obtained above is laminated on one surface (upper surface) 11a of the base 11 via the first adhesive layer 110, in the same manner as in the manufacturing method of the electrostatic chuck device of the above embodiment, to obtain a laminate b. Thereafter, the laminate b is heated at a predetermined temperature for a predetermined time, or left at room temperature for a predetermined time, to harden the first adhesive layer 110.
The adhesive layer 110 and the adhesive layer 130 may be produced by applying an adhesive paint or may be produced as an adhesive sheet.

"Ceramic layer 15 forming process"
In the ceramic layer 15 forming step, the ceramic layer 15 is formed on one surface (upper surface) 210 a of the second insulating organic film 210 in the same manner as in the method for manufacturing the electrostatic chuck device of the above-described embodiment.

"Ceramic film 16 coating process"
In the coating process of the ceramic film 16, in the same manner as in the manufacturing method of the electrostatic chuck device of the above-mentioned embodiment, the above-mentioned paint is applied to one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 210a of the second insulating organic film 210 to form a coating film.

"Heating process"
In the heating process, similarly to the manufacturing method of the electrostatic chuck device of the above-described embodiment, the coating film formed in the coating process on one surface (top surface) 15a of the ceramic layer 15, the other surface (side surface) 15b of the ceramic layer 15, and one surface (top surface) 210a of the second insulating organic film 210 is heated to obtain the convex portion 14.

Furthermore, the manufacturing method for the electrostatic chuck device of this embodiment may include a polishing step for polishing the surface 16a of the protrusion 14, similar to the manufacturing method for the ceramic film of the above-mentioned embodiment.

The manufacturing method for the electrostatic chuck device of the second variant makes it possible to provide an electrostatic chuck device with protrusions that have excellent plasma resistance and high adhesion.

The present invention will be explained in more detail below using examples and comparative examples, but the present invention is not limited to the following examples.

[Example 1]
"Preparation of paint for forming ceramic layer 15"
A coating material for forming the ceramic layer 15 was obtained by mixing and dissolving 100 parts by mass of polyacrylamide resin and 2000 parts by mass of alumina particles having an average primary particle size of 0.3 μm in an appropriate amount of water.

"Preparation of paint for forming ceramic film 16"
Four parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) was added to six parts by mass of spherical alumina particles (Al ₂ O ₃ , manufactured by Denka Co., Ltd.) having an average primary particle diameter of 0.3 μm, and mixed using a planetary centrifugal mixer (product name: Kakuhunter, manufactured by Shashin Kagaku Co., Ltd.) to obtain a coating material for forming the ceramic film 16.

"Fabrication of electrostatic chuck device"
An electrostatic chuck device having a configuration similar to that of the second modified example shown in FIG. 4 was fabricated.
A copper foil having a thickness of 9 μm was formed by plating one surface of a 12 μm thick polyimide resin sheet as the first insulating organic film 120. After a photoresist was applied to the surface of the copper foil, a pattern was exposed to light and then developed, and unnecessary copper foil was removed by etching.
Thereafter, the copper foil on the polyimide resin sheet was washed to remove the photoresist, and an electrode 12 was formed to obtain a laminate composed of a polyimide resin sheet and copper foil. This electrode 12 is a comb-shaped electrode having two comb-shaped structures in which a 5 mm-wide conductive portion and a 5 mm-wide insulating portion are alternately arranged.

An insulating adhesive sheet semi-cured by drying and heating was laminated as the second adhesive layer 130 (20 μm thick) on the surface of the above laminate on which the electrode 12 was formed. A 12 μm thick polyimide resin sheet was then bonded to the surface of the insulating adhesive sheet as the second insulating organic film 210 and adhered by heat treatment. The insulating adhesive sheet used was a mixture of 27 parts by weight of bismaleimide resin, 3 parts by weight of diaminosiloxane, 20 parts by weight of resol phenolic resin, 10 parts by weight of biphenyl epoxy resin, and 240 parts by weight of ethyl acrylate-butyl acrylate-acrylonitrile copolymer dissolved in an appropriate amount of tetrahydrofuran and molded into a sheet.

Next, a semi-cured insulating adhesive sheet similar to that described above was laminated as the first adhesive layer 110 on the side of the polyimide resin sheet opposite the side on which the electrode 12 was formed, and this was then attached to one side of the aluminum base 11 and bonded by heat treatment.

Next, a mask sheet (heat-resistant nonwoven fabric) 300 having a large number of through holes 310 as shown in Fig. 5 was placed on the surface of the polyimide resin sheet, and the paint for forming ceramic layer 15 was applied to the mask sheet and dried at 100°C for 10 minutes to remove the solvent. Thereafter, the mask sheet was peeled off, and a ceramic layer 15 having a plurality of convex shapes and a thickness of approximately 100 µm was formed on the polyimide resin sheet.
Next, the ceramic film-forming paint was spray-coated on the entire surface of the polyimide resin sheet having the above-mentioned convex ceramic layer 15, and then dried in the atmosphere to remove the solvent. Then, the sheet was heated in a thermostatic chamber at 500 ° C for 2 hours, and the surface of the convex portion of the ceramic film was polished with a #200 nanodiamond polyimide polishing sheet to obtain an electrostatic chuck device having a plurality of convex portions made of a ceramic film 16 having a thickness of about 40 μm. After the surface of the convex portion of the electrostatic chuck device was polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred in the convex portion, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 2]
An electrostatic chuck device of Example 2 was produced in the same manner as in Example 1, except that 4 parts by mass of spherical alumina particles (Al ₂ O ₃ , manufactured by Denka Company) having an average primary particle diameter of 0.3 μm and 6 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 3]
An electrostatic chuck device of Example 3 was produced in the same manner as in Example 1, except that 2 parts by mass of spherical alumina particles (Al ₂ O ₃ , manufactured by Denka Company, Ltd.) having an average primary particle diameter of 0.3 μm and 8 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 4]
An electrostatic chuck device of Example 4 was produced in the same manner as in Example 1, except that 8 parts by mass of spherical alumina particles (Al ₂ O ₃ , manufactured by Denka Company, Ltd.) having an average primary particle diameter of 0.3 μm and 2 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 5]
An electrostatic chuck device of Example 5 was produced in the same manner as in Example 1, except that 6 parts by mass of spherical alumina particles (Al ₂ O ₃ , manufactured by Denka Company) having an average primary particle diameter of 0.1 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions in the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 6]
An electrostatic chuck device of Example 6 was produced in the same manner as in Example 1, except that 6 parts by mass of spherical alumina particles (Al ₂ O ₃ , manufactured by Denka Company, Ltd.) having an average primary particle diameter of 50 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 7]
An electrostatic chuck device of Example 7 was produced in the same manner as in Example 1, except that 4 parts by mass of a toluene solution of magnesium stearate (solid content 10% by mass) was added instead of 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) as the coating material for forming the ceramic film 16. After the surface of the convex portion of the electrostatic chuck device was polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portion, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 8]
An electrostatic chuck device of Example 8 was produced in the same manner as in Example 1, except that 4 parts by mass of a toluene solution of nickel stearate (solid content 10% by mass) was added instead of 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) as the coating material for forming the ceramic film 16. After the surface of the convex portion of the electrostatic chuck device was polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portion, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 9]
An electrostatic chuck device of Example 9 was produced in the same manner as in Example 1, except that 6 parts by mass of spherical magnesia particles (MgO, manufactured by Denka Corporation) having an average primary particle diameter of 0.3 μm and 4 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions in the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 10]
An electrostatic chuck device of Example 10 was produced in the same manner as in Example 1, except that 4 parts by mass of spherical magnesia particles (MgO, manufactured by Denka Corporation) having an average primary particle diameter of 0.3 μm and 6 parts by mass of a toluene solution of yttrium laurate (solid content 10% by mass) were added as the paint for forming the ceramic film 16. After the surfaces of the convex portions of the electrostatic chuck device were polished with the nanodiamond polyimide polishing sheet, no chipping or the like occurred on the convex portions, and it was confirmed that the ceramic particles were firmly bonded together via the metal oxide.

[Example 11]
An electrostatic chuck device of Example 11 was produced in the same manner as in Example 1, except that the paint used for forming ceramic layer 15 was a mixture of 100 parts by mass of polyacrylamide resin and 2,000 parts by mass of yttria particles having an average primary particle diameter of 0.3 μm dissolved in an appropriate amount of water.

[Example 12]
An electrostatic chuck device of Example 12 was produced in the same manner as in Example 1, except that a mixture of 2,000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm with 100 parts by mass of a polyimide resin solution was used as the paint for forming ceramic layer 15.

[Example 13]
An electrostatic chuck device of Example 13 was produced in the same manner as in Example 1, except that the paint used for forming ceramic layer 15 was a mixture of 100 parts by mass of epoxy resin and 2,000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm dissolved in an appropriate amount of solvent.

[Example 14]
An electrostatic chuck device of Example 14 was produced in the same manner as in Example 1, except that the paint used for forming ceramic layer 15 was a mixture of 100 parts by mass of acrylic resin and 2,000 parts by mass of alumina particles having an average primary particle diameter of 0.3 μm dissolved in an appropriate amount of solvent.

[Comparative Example 1]
An electrostatic chuck device of Comparative Example 1 was produced in the same manner as in Example 1, except that the paint for forming the ceramic film 16 used in Example 1 was used as the paint for forming the ceramic layer 15.

[Checking the ceramic membrane]
The ceramic film 16 formed on the surface of each of the electrostatic chuck devices in Examples 1 to 14 was imaged with a scanning electron microscope (SEM) to confirm the state of each particle. As a result, it was confirmed that in the ceramic film 16 formed on the surface of each of the electrostatic chuck devices in Examples 1 to 14, at least some of the ceramic particles were bonded together via metal oxide.

[evaluation]
The electrostatic chuck devices obtained in Examples 1 to 14 were used to carry out the following voltage resistance test.

<Voltage resistance>
A copper foil was placed on the attraction surface of the electrostatic chuck device, and the copper foil and the base were grounded.
Next, a voltage was applied between the terminals provided at both ends of the comb-shaped electrode, and then the applied voltage difference (voltage difference between the terminals) was gradually increased, and the applied voltage difference at the time when dielectric breakdown occurred was measured.

An evaluation of voltage resistance showed that the electrostatic chuck devices of Examples 1 to 14 did not experience dielectric breakdown even when the applied voltage difference was 20 kV or more.

Furthermore, the electrostatic chuck devices obtained in Examples 1 to 14 and Comparative Example 1 were used to carry out the following adhesion test.
<Adhesion>
The adhesion of the chucking surface of the electrostatic chuck device was evaluated by a tape peeling test, which was performed in accordance with "1) Tape test method" in "g) Peeling test method" of JIS H8504 (1999) "Methods for testing adhesion of plating."
As a result, in the electrostatic chuck devices of Examples 1 to 14, no deposits were found on the adhesive surface of the adhesive tape.
On the other hand, in the electrostatic chuck device of Comparative Example 1, some of the protrusions were attached to the adhesive surface of the adhesive tape.

REFERENCE SIGNS LIST 10 Electrostatic chuck device 11 Base 12 Electrode 13 Ceramic layer 14 Convex portion 15 Ceramic layer 16 Ceramic film 21 Ceramic particles 22 Metal oxide 100, 200 Electrostatic chuck device 110 First adhesive layer 120 First insulating organic film 130 Second adhesive layer 210 Second insulating organic film

Claims (5)

An electrostatic chuck device having a plurality of protrusions on an attraction surface,
the protrusions have a ceramic film and a ceramic layer containing a resin binder,
the ceramic membrane contains ceramic particles and a metal oxide;
The electrostatic chuck device is characterized in that at least a portion of the ceramic particles are bonded to each other via the metal oxide. The electrostatic chuck device according to claim 1, wherein the ceramic particles are at least one selected from the group consisting of alumina, magnesia, yttria, zirconia, silica, and zinc oxide. An electrostatic chuck device according to claim 1 or 2, characterized in that the average primary particle diameter of the ceramic particles is 0.1 μm or less and 50 μm or less. An electrostatic chuck device according to any one of claims 1 to 3, characterized in that the metal oxide is a metal oxide obtained by heat-treating an organometallic compound to decompose and remove organic components and oxidize the metal that constitutes the organometallic compound. The electrostatic chuck device according to claim 4, characterized in that the metal constituting the organometallic compound is at least one selected from the group consisting of aluminum, yttrium, and magnesium.