JP7777463B2 - Substrate processing apparatus and method for cleaning processing cup - Google Patents

Description

This invention relates to a substrate processing apparatus for processing substrates. It also provides a method for cleaning a processing cup in the substrate processing apparatus. Substrates that can be processed by the substrate processing apparatus include, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

Patent Document 1 below discloses a substrate processing apparatus in which a cleaning liquid outlet is provided on the side of a spin base to clean cups.

Patent Document 2 below discloses a substrate processing apparatus in which a cleaning nozzle is provided below a spin base, and a cleaning liquid is sprayed obliquely upward to clean the inner surface of a collection cup.

Patent Document 3 below discloses a substrate processing apparatus in which a disk-shaped cup cleaning member has multiple holes through which the cups are cleaned.

Japanese Patent Application Laid-Open No. 2021-44494 JP 2015-56431 A JP 2017-92244 A

In the cup cleaning structures described in Patent Documents 1 to 3, the distance from the cleaning liquid outlet to the cup is short. For this reason, with the configuration of Patent Document 1, the spin base must be rotated to clean the entire circumference of the cup. Furthermore, with the configurations of Patent Documents 2 and 3, a large number of nozzles or outlets are required to clean the entire circumference of the cup.

Therefore, one object of the present invention is to provide a substrate processing apparatus including a cup cleaning configuration that can efficiently clean the entire circumference of the cup using a small number of cleaning nozzles, and a method for cleaning a processing cup in a substrate processing apparatus.

One embodiment of the present invention provides a substrate processing apparatus for processing substrates, comprising: a rotating holding member that holds a substrate and rotates the substrate about a predetermined rotation axis; a cylindrical processing cup that surrounds the rotating holding member; and a cup cleaning nozzle that is provided below the rotating holding member and that, in a plan view, sprays a cleaning liquid in a fan shape toward the processing cup; the cup cleaning nozzles are arranged at multiple positions a predetermined radial distance from the rotation axis and are equally spaced circumferentially about the rotation axis, and the center of spraying the cleaning liquid from each cup cleaning nozzle faces in a direction that is tilted a predetermined angle circumferentially relative to the radial direction.

In this substrate processing apparatus, the cup cleaning nozzle sprays cleaning liquid in a fan-shaped pattern toward the processing cup in a plan view, allowing for cleaning of a relatively wide area of the processing cup's inner surface. Furthermore, because multiple cup cleaning nozzles are arranged at equal circumferential intervals below the rotating holding member, the system can be designed to thoroughly clean the entire inner surface of the processing cup. By orienting the spray center of each cup cleaning nozzle in a direction offset by a predetermined angle circumferentially from the radial direction in a plan view, the spray range of a single cup cleaning nozzle, or in other words, the cleaning area of the processing cup's inner surface, can be expanded. Therefore, a configuration is achieved in which the entire inner surface of the processing cup can be thoroughly cleaned with a relatively small number of cup cleaning nozzles.

The processing cup of this substrate processing apparatus may include a cylindrical guard that catches liquid splashed outward from the substrate as it is rotated by the rotating holding member, and a cup that collects the liquid that is caught by the cylindrical guard and guided downward. In this case, it is desirable that each of the multiple cup cleaning nozzles face the inner surface of the cylindrical guard at a fixed distance (for example, facing horizontally). This allows the inner surface of the cylindrical guard to be cleaned without any gaps in the circumferential direction, and the cleaning liquid flows downward along the inner surface of the cylindrical guard and is caught in the cup, allowing the inner surface of the cylindrical guard to be cleaned efficiently.

The cup cleaning nozzle of this substrate processing apparatus may be a nozzle that sprays a fan-shaped jet that spreads out at a predetermined angle in a plan view and a linear jet that is approximately horizontal in a side view, i.e., a nozzle with a flat jet profile that spreads out in a fan shape along the horizontal plane. Using such a nozzle allows the inner surface of the processing cup (cylindrical guard) to be thoroughly cleaned using a relatively small amount of cleaning liquid.

The predetermined angle θ of the cup cleaning nozzle of this substrate processing apparatus in the circumferential direction is preferably 10°≦θ≦30°. Verification and evaluation using a prototype confirmed that the inner surface of the processing cup (cylindrical guard) can be cleaned without any gaps if 10°≦θ≦30°.

Alternatively, seven cup cleaning nozzles may be provided. With seven cup cleaning nozzles, the cleaning range of each cup cleaning nozzle is appropriate, and the spray strength of the cleaning liquid is also appropriate.

Furthermore, the cleaning liquid sprayed by the cup cleaning nozzle may be DIW (Deionized Water). Using DIW is particularly effective in rinsing VOCs (Volatile Organic Compounds) from the inner surface of the processing cup (cylindrical guard), thereby reducing the VOC concentration inside the processing cup.

In another embodiment of the present invention, a processing cup cleaning method involves performing a VOC processing step using VOCs, followed by a substrate drying process, in which the processing cup is cleaned using the cup cleaning nozzle in parallel with the drying process.

As in this embodiment, by performing the cup cleaning process in parallel with the substrate drying process after the VOC treatment process, it is possible to reduce the VOC concentration in the exhaust gas at the end of the substrate treatment.

FIG. 1 is a schematic plan view showing the internal configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic vertical cross-sectional view taken along line II-II in FIG. FIG. 3 is a schematic cross-sectional view for explaining an example of the configuration of a processing unit provided in the substrate processing apparatus. FIG. 4 is a schematic plan view for explaining the arrangement structure of the cup washing nozzles. FIG. 5 is a schematic diagram showing the spray direction of the cleaning liquid sprayed from one cup cleaning nozzle as viewed from the side. FIG. 6 is a schematic plan view showing the spray direction of the cleaning liquid sprayed from one cup cleaning nozzle. FIG. 7 is a block diagram showing the electrical configuration of the main parts of the substrate processing apparatus. FIG. 8 is a flowchart illustrating an example of substrate processing by the substrate processing apparatus. FIG. 9 is a table showing a list of cylindrical guards, drainage paths, and exhaust paths that are mainly used in each of the processing steps shown in FIG.

The following describes an embodiment of the present invention with reference to the accompanying drawings.

Figure 1 is a schematic plan view showing the internal configuration of a substrate processing apparatus 1 according to one embodiment of the present invention. Figure 2 is a schematic vertical cross-sectional view taken along line II-II in Figure 1.

The substrate processing apparatus 1 includes an indexer block 2, a processing block 3 adjacent to the indexer block 2 in the lateral (horizontal) direction, and a controller 4 (see Figure 7 described below) that controls the substrate processing apparatus 1.

The indexer block 2 includes multiple load ports LP (four in this embodiment) and an indexer robot IR.

The load ports LP are arranged horizontally. Each load port LP is configured to hold one carrier CA. The carrier CA is a substrate container that contains substrates W to be processed. The substrates W are, for example, semiconductor wafers.

The indexer robot IR is configured to access the carriers CA held on each of the multiple load ports LP, load/unload substrates W, and transport substrates W between the processing block 3. In this embodiment, the indexer robot IR is an articulated arm robot equipped with an articulated arm.

The processing block 3 includes multiple (24 in this embodiment) processing units 5, multiple substrate placement units 6 (first substrate placement unit 6U and second substrate placement unit 6L), and multiple main transport robots CR (first main transport robot CRU and second main transport robot CRL).

Each of the multiple processing units 5 processes substrates W. In this embodiment, each processing unit 5 is a single-wafer processing unit that processes substrates W one at a time.

The multiple processing units 5 are arranged on both sides of the transport space 8, through which substrates W are transported by the multiple main transport robots CR, and face the transport space 8. In a plan view, the transport space 8 extends linearly in a direction away from the indexer block 2.

The multiple processing units 5 make up multiple (four in this embodiment) processing towers TW. In a plan view, multiple (two in this embodiment) processing towers TW are arranged on each side of the transfer space 8. Each processing tower TW includes multiple levels (six in this embodiment) of processing units 5 stacked vertically. In this embodiment, 24 processing units 5 are arranged in four processing towers TW, six units per group. All processing units 5 have a substrate loading/unloading entrance 5a facing the transfer space 8.

A fluid supply unit 9 and an exhaust unit 10 are located on the sides of each processing tower TW. The fluid supply unit 9 houses piping for supplying processing fluids used in the multiple processing units 5 that make up the processing tower TW, as well as pumps for transporting the fluids in the piping. The exhaust unit 10 houses piping for exhausting the atmosphere inside the multiple processing units 5 that make up the processing tower TW.

The processing fluid refers to the liquid (processing liquid) or gas used in the substrate processing apparatus 1. Examples of processing liquids include chemical liquids, rinse liquids, and cleaning liquids, which will be described later.

In a plan view, the exhaust section 10 houses exhaust pipes 11 for directing exhaust from the multiple processing units 5 that make up the corresponding processing tower TW to exhaust equipment outside the substrate processing apparatus 1. Three exhaust pipes 11 are provided: one for acid exhaust, one for alkali exhaust, and one for volatile organic compound exhaust. The exhaust section 10 also houses a switching mechanism 12 that switches between the three exhaust pipes 11 depending on the type of processing (more specifically, the type of processing liquid) within the processing unit 5. Although not shown, the exhaust section 10 may also house actuators that drive the switching mechanism 12.

The multiple processing units 5 are classified as lower-tier processing units 5 or upper-tier processing units 5. In this embodiment, the processing units 5 in the bottom three tiers are lower-tier processing units 5, and the processing units 5 in the top three tiers are upper-tier processing units 5.

The first substrate placement unit 6U and the second substrate placement unit 6L are arranged side by side in the vertical direction. The first main transport robot CRU and the second main transport robot CRL are arranged side by side in the vertical direction in the transport space 8.

The first substrate platform 6U temporarily holds substrates W being transferred between the indexer robot IR and the first main transport robot CRU. The second substrate platform 6L temporarily holds substrates W being transferred between the indexer robot IR and the second main transport robot CRL.

The first main transport robot CRU transports substrates W between the first substrate platform 6U and the upper processing unit 5. The second main transport robot CRL transports substrates W between the second substrate platform 6L and the lower processing unit 5.

The processing unit 5 includes a spin chuck 15 that rotates the substrate W around a rotation axis A1 (vertical axis) while holding the substrate W horizontally, a processing cup 16 that surrounds the spin chuck 15 in a plan view, and a processing chamber 17 that houses the spin chuck 15 and processing cup 16. The rotation axis A1 is a vertical line that passes through the center of the substrate W. The spin chuck 15 is an example of a rotating holding member.

The processing chamber 17 includes a bottom wall 17A, multiple (four in this embodiment) side walls 17B, and a top wall 17C (see Figure 3, described below), which define the internal space 101 of the processing chamber 17. The substrate loading/unloading opening 5a is formed in the side wall 17B of the processing chamber 17.

Figure 3 is a schematic cross-sectional view illustrating an example configuration of the processing unit 5.

The spin chuck 15 includes multiple chuck pins 20, a spin base 21, a rotation shaft 22, and a spin motor 23.

The spin base 21 has a horizontally extending circular disk shape. In a plan view, the spin base 21 has a circular shape with a larger diameter than the substrate W. On the upper surface of the spin base 21, multiple chuck pins 20 that grip the periphery of the substrate W are arranged at intervals in the circumferential direction of the spin base 21. The chuck pins 20 are also called gripping pins.

The spin base 21 and the multiple chuck pins 20 form a substrate holding unit that holds the substrate W horizontally. The substrate holding unit is also called a substrate holder.

The rotation shaft 22 extends vertically along the rotation axis A1. The upper end of the rotation shaft 22 is connected to the center of the underside of the spin base 21. The spin motor 23 applies a rotational force to the rotation shaft 22. The rotation of the rotation shaft 22 by the spin motor 23 rotates the spin base 21. This causes the substrate W to rotate around the rotation axis A1. The spin motor 23 is an example of a substrate rotation unit that rotates the substrate W around the rotation axis A1. In this embodiment, the substrate holding unit and the substrate rotation unit form a rotary holding member.

The processing unit 5 includes multiple processing liquid nozzles 30 and an FFU (Fan Filter Unit) 26. The multiple processing liquid nozzles 30 are housed in the processing chamber 17.

The FFU 26 is attached to an opening 17a in the upper wall 17C of the processing chamber 17 and is an example of an air blowing unit that sends clean air into the processing chamber 17. The FFU 26 includes a fan (not shown) that generates an airflow from outside the processing chamber 17 toward the inside of the processing chamber 17, a filter (not shown) for removing foreign matter contained in the airflow, and an actuator (not shown) such as a motor that drives the fan.

Each processing liquid nozzle 30 is an example of a liquid supply member that supplies liquid to the substrate W held on the spin chuck 15. The multiple processing liquid nozzles 30 include chemical liquid nozzles 31, 34 that eject chemical liquid toward the upper surface of the substrate W, an upper rinse liquid nozzle 32 that ejects rinse liquid toward the upper surface of the substrate W, a lower rinse liquid nozzle 33 that ejects rinse liquid toward the lower surface of the substrate W, and an IPA nozzle 35 that ejects IPA (Isopropyl Alcohol) toward the upper surface of the substrate W. IPA is an example of a VOC (Volatile Organic Compound).

The chemical nozzle 31 is connected to a chemical pipe 41 that guides the chemical to the chemical nozzle 31. The chemical pipe 41 is fitted with a chemical valve 51 that opens and closes the flow path, and a chemical pump 61 that sends the chemical to the chemical nozzle 31. When the chemical valve 51 is opened, the chemical is ejected downward from the chemical nozzle 31 in a continuous flow.

In this embodiment, the chemical nozzle 31 is a movable nozzle that is moved horizontally and vertically by the first nozzle movement unit 71. The chemical nozzle 31 is configured to move horizontally between a central position and a home position (retracted position). When the chemical nozzle 31 is located in the central position and the chemical valve 51 is opened, the chemical is supplied to a central region of the upper surface of the substrate W.

The first nozzle movement unit 71 may include an arm 71A connected to the chemical nozzle 31 and extending horizontally, a rotating shaft 71B connected to the arm 71A and extending vertically, and a rotating shaft drive unit 71C that rotates and raises and lowers the rotating shaft 71B.

The pivoting shaft drive unit 71C includes a drive motor (not shown) that rotates the pivoting shaft 71B around a vertically extending pivot axis A2 to swing the arm 71A, and an arm lifter (not shown) that raises and lowers the arm 71A by raising and lowering the pivoting shaft 71B in the vertical direction. The arm lifter is, for example, a ball screw mechanism or a rack and pinion mechanism.

Unlike this embodiment, the chemical nozzle 31 may be a fixed nozzle whose position is fixed in the horizontal and vertical directions.

In this embodiment, the chemical liquid ejected from the chemical liquid nozzle 31 may be an acidic liquid such as sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, hydrogen peroxide, or organic acid (e.g., citric acid, oxalic acid, etc.). These chemical liquids may be used as a single type of chemical liquid, or a mixture of these may be used. An example of a mixture is SPM (sulfuric acid/hydrogen peroxide mixture).

The chemical nozzle 34 is connected to a chemical pipe 47 that guides the chemical to the chemical nozzle 34. The chemical pipe 47 is fitted with a chemical valve 57 that opens and closes the flow path, and a chemical pump 67 that sends the chemical to the chemical nozzle 34. When the chemical valve 57 is opened, the chemical is ejected downward from the chemical nozzle 34 in a continuous flow.

In this embodiment, the chemical nozzle 34 is a mobile nozzle that is moved horizontally and vertically by the third nozzle movement unit 74. The chemical nozzle 34 is configured to move horizontally between a central position and a home position (retracted position). When the chemical nozzle 34 is located in the central position and the chemical valve 57 is opened, the chemical is supplied to the central region of the top surface of the substrate W.

The third nozzle movement unit 74 may include an arm 74A connected to the chemical nozzle 34 and extending horizontally, a rotating shaft 74B connected to the arm 74A and extending vertically, and a rotating shaft drive unit 74C that rotates and raises and lowers the rotating shaft 74B.

The pivoting shaft drive unit 74C includes a drive motor (not shown) that rotates the pivoting shaft 74B around a vertically extending pivot axis A4 to swing the arm 74A, and an arm lifter (not shown) that raises and lowers the arm 74A by raising and lowering the pivoting shaft 74B in the vertical direction. The arm lifter is, for example, a ball screw mechanism or a rack and pinion mechanism.

Unlike this embodiment, the chemical nozzle 34 may be a fixed nozzle whose position is fixed in the horizontal and vertical directions.

In this embodiment, the chemical liquid ejected from the chemical nozzle 34 may be an alkaline liquid such as ammonia water, hydrogen peroxide water, or an organic alkali (e.g., TMAH (tetramethylammonium hydroxide)). These chemical liquids may be used as a single type of chemical liquid, or a mixture of these may be used. An example of a mixture is APM (ammonia-hydrogen peroxide mixture).

The upper rinse liquid nozzle 32 is connected to an upper rinse liquid pipe 42 that guides rinse liquid to the upper rinse liquid nozzle 32. The upper rinse liquid pipe 42 is equipped with an upper rinse liquid valve 52 that opens and closes its flow path, and an upper rinse liquid pump 62 that sends rinse liquid to the upper rinse liquid nozzle 32. When the upper rinse liquid valve 52 is opened, rinse liquid is ejected downward from the upper rinse liquid nozzle 32 in a continuous flow.

In this embodiment, the upper rinse liquid nozzle 32 is a movable nozzle that is moved horizontally and vertically by the second nozzle movement unit 72. The upper rinse liquid nozzle 32 is configured to move horizontally between a central position and a home position (retracted position). When the upper rinse liquid valve 52 is opened while the upper rinse liquid nozzle 32 is located at the central position, rinse liquid is supplied to the central region of the upper surface of the substrate W.

The second nozzle movement unit 72 may include an arm 72A connected to the upper rinse liquid nozzle 32 and extending horizontally, a rotating shaft 72B connected to the arm 72A and extending vertically, and a rotating shaft drive unit 72C that rotates and raises and lowers the rotating shaft 72B.

The pivoting shaft drive unit 72C includes a drive motor (not shown) that rotates the pivoting shaft 72B around a vertically extending pivot axis A3 to swing the arm 72A, and an arm lifter (not shown) that raises and lowers the arm 72A by raising and lowering the pivoting shaft along the vertical direction. The arm lifter is, for example, a ball screw mechanism or a rack and pinion mechanism.

Unlike this embodiment, the upper rinse liquid nozzle 32 may be a fixed nozzle whose position is fixed in the horizontal and vertical directions.

The lower rinse liquid nozzle 33 is a fixed nozzle that discharges rinse liquid toward the center of the lower surface of the substrate W. The lower rinse liquid nozzle 33 is inserted into a through-hole 21a that opens in the center of the upper surface of the spin base 21 and into the internal space 22a of the rotation shaft 22 that communicates with the through-hole 21a. The discharge port 33a of the lower rinse liquid nozzle 33 is exposed on the upper surface of the spin base 21.

The lower rinse liquid nozzle 33 is connected to a lower rinse liquid pipe 43 that guides rinse liquid to the lower rinse liquid nozzle 33. The lower rinse liquid pipe 43 is equipped with a lower rinse liquid valve 53 that opens and closes its flow path, and a lower rinse liquid pump 63 that sends rinse liquid to the lower rinse liquid nozzle 33. When the lower rinse liquid valve 53 is opened, rinse liquid is ejected upward from the lower rinse liquid nozzle 33 in a continuous flow.

Examples of rinse solutions include DIW (deionized water), carbonated water, electrolytic ionized water, diluted hydrochloric acid water (e.g., approximately 1 ppm to 100 ppm), diluted ammonia water (e.g., approximately 1 ppm to 100 ppm), and reduced water (hydrogen water).

A lower gas flow path 25 is formed by the space between the lower rinse liquid nozzle 33 and the through-hole 21 a of the spin base 21. The lower gas flow path 25 is connected to a lower gas pipe 44 that is inserted into the internal space 22 a between the inner circumferential surface of the rotation shaft 22 and the lower rinse liquid nozzle 33. When a lower gas valve 54 installed in the lower gas pipe 44 is opened, a gas such as nitrogen gas (N ₂ gas) is discharged from the lower gas flow path 25 toward the space between the lower surface of the substrate W and the upper surface of the spin base 21.

The gas discharged from the lower gas flow path 25 is not limited to nitrogen gas. The gas discharged from the lower gas flow path 25 may be air. Furthermore, the gas discharged from the lower gas flow path 25 may be an inert gas other than nitrogen gas. An example of an inert gas other than nitrogen gas is argon.

The IPA nozzle 35 is held by an arm 35A. The arm 35A is connected to an arm movement unit 35B. The arm movement unit 35B can raise and lower the IPA nozzle 35 via the arm 35A, and can also retract it to a predetermined retract position.

A pipe 48 is connected to the IPA nozzle 35. A valve 58 is installed in the pipe 48. When the valve 58 is opened, IPA is supplied to the IPA nozzle 35 through the pipe 48, and the IPA is then supplied from the IPA nozzle 35 to the central region of the top surface of the substrate W.

A pipe 49 is further connected to the IPA nozzle 35. A valve 59 is provided in the pipe 49. When the valve 59 is opened, _N2 gas is supplied to the IPA nozzle 35 through the pipe 49. The IPA nozzle 35 is provided with an outlet that discharges the _N2 gas supplied from the pipe 49, for example, downward or to the side. When the _N2 gas is discharged from the IPA nozzle 35, the _N2 gas contributes to drying the substrate W.

A cylindrical boss casing 27 is provided below the spin base 21, enclosing the rotation shaft 22, spin motor 23, etc. An inclined surface 27a sloping upward and inward is formed at the upper end of the outer circumferential surface of the boss casing 27. In a plan view, the inclined surface 27a has an annular shape. Multiple cup cleaning nozzles 28 are arranged on the inclined surface 27a. The cup cleaning nozzles 28 are preferably arranged at equal intervals around the circumferential direction of the inclined surface 27a, and the number of cup cleaning nozzles 28 may be, for example, seven. Each cup cleaning nozzle 28 may be attached to the boss casing 27 by screwing it onto the inclined surface 27a.

The cup washing nozzles 28 are connected to a washing liquid pipe 46 that guides washing liquid to the cup washing nozzles 28. The washing liquid pipe 46 includes branch sections 46a that guide washing liquid to each cup washing nozzle 28, and a main pipe section 46b where the multiple branch sections 46a converge. The main pipe section 46b of the washing liquid pipe 46 is equipped with a washing liquid valve 55 that opens and closes the flow path, and a washing liquid pump 64 that sends washing liquid to the washing liquid pipe 46. When the washing liquid valve 55 is opened, washing liquid flows from the main pipe section 46b to the multiple branch sections 46a, and the washing liquid is sprayed at an equal flow rate from each cup washing nozzle 28.

The processing cup 16 includes a cylindrical guard 80 that catches liquid splashed outward from the substrate W held and rotating on the spin chuck 15, a cup 90 that catches liquid guided downward by the cylindrical guard 80, and an exhaust tub 100 that surrounds the cylindrical guard 80 and cup 90 in a plan view.

In this embodiment, an example is shown in which two cylindrical guards 80 (first cylindrical guard 80A and second cylindrical guard 80B) and two cups 90 (first cup 90A and second cup 90B) are provided. However, the number of cylindrical guards 80 may be one, or three or more. The number of cups 90 may also be one, or three or more.

The cylindrical guard 80 is made of, for example, resin. The cylindrical guard 80 is formed from a hydrophilic resin or a hydrophobic resin. It is preferable that the cylindrical guard 80 is formed from a hydrophobic resin.

The hydrophobic resin is, for example, a fluororesin. Specifically, the cylindrical guard 80 is formed from one of perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), and ethylene chlorotrifluoroethylene copolymer (ECTFE), or a mixture containing two or more of these.

Each of the first cup 90A and the second cup 90B has an upwardly open annular groove.

The first cylindrical guard 80A and the second cylindrical guard 80B each have a substantially cylindrical shape, and the upper end of each cylindrical guard 80 is inclined inward toward the center of the cylindrical guard 80. The first cylindrical guard 80A is positioned to surround the substrate W held by the spin chuck 15. The second cylindrical guard 80B (inner guard) is positioned closer to the center of the first cylindrical guard 80A than the first cylindrical guard 80A (outer guard) and surrounds the substrate W held by the spin chuck 15.

The center side of the first cylindrical guard 80A (hereinafter referred to as the "inner guard side IS") is also the inside in the direction of the rotation radius of the substrate W. The opposite side of the center side of the first cylindrical guard 80A (hereinafter referred to as the "outer guard side OS") is also the outside in the direction of the rotation radius of the substrate W. The first cylindrical guard 80A and the second cylindrical guard 80B are arranged coaxially on the rotation axis A1, and the center side of the first cylindrical guard 80A is also the center side of the second cylindrical guard 80B.

The first cup 90A is formed integrally with the second cylindrical guard 80B and receives the liquid guided downward by the first cylindrical guard 80A. The second cup 90B receives the liquid guided downward by the second cylindrical guard 80B. The liquid received by the first cup 90A is collected into a predetermined collection container by opening valve V1 through a first processing liquid recovery path 901 connected to the lower end of the first cup 90A. The liquid received by the second cup 90B is collected into a predetermined collection container by opening valve V2 through a flow path 902 and a second processing liquid recovery path 903 connected to the lower end of the second cup 90B. Furthermore, the liquid received by the second cup 90B is collected into a predetermined collection container by opening valve V3 through a flow path 902 and a third processing liquid recovery path 904 connected to the lower end of the second cup 90B.

In this embodiment, as described below, the liquid recovered through the first treatment liquid recovery channel 901 is DHF (Dolute Hydrogen Fluoride), the liquid recovered through the second treatment liquid recovery channel 903 is an alkaline liquid, and the liquid recovered through the third treatment liquid recovery channel 904 is IPA.

The processing unit 5 includes a guard lifting unit 95 that raises and lowers the first cylindrical guard 80A and the second cylindrical guard 80B separately. The guard lifting unit 95 raises and lowers the first cylindrical guard 80A between a lower position and an upper position. The guard lifting unit 95 raises and lowers the second cylindrical guard 80B between a lower position and an upper position.

When the first cylindrical guard 80A and the second cylindrical guard 80B are both in the upper position, liquid splashed from the substrate W is received by the second cylindrical guard 80B. When the second cylindrical guard 80B is in the lower position and the first cylindrical guard 80A is in the upper position, liquid splashed from the substrate W is received by the first cylindrical guard 80A.

When both the first cylindrical guard 80A and the second cylindrical guard 80B are in the lower position, the corresponding main transport robot CR can load and unload substrates W into and from the processing chamber 17.

The guard lifting unit 95 includes a first guard lifting unit that lifts and lowers the first cylindrical guard 80A, and a second guard lifting unit that lifts and lowers the second cylindrical guard 80B. The first guard lifting unit is, for example, a first actuator (not shown) that provides driving force to a first lifting mechanism (not shown) coupled to the first cylindrical guard 80A. The first lifting mechanism is, for example, a ball screw mechanism or a rack and pinion mechanism. The second guard lifting unit is a second actuator (not shown) that provides driving force to a second lifting mechanism (not shown) coupled to the second cylindrical guard 80B. The second lifting mechanism is, for example, a ball screw mechanism or a rack and pinion mechanism.

The guard lifting unit 95 is also referred to as a guard lifter. Similarly, the first guard lifting unit is the first guard lifter, and the second guard lifting unit is the second guard lifter.

The internal space 101 of the processing chamber 17 is divided into an intra-guard space 102 located inside the guard IS relative to the first cylindrical guard 80A, and an extra-guard space 103 outside the intra-guard space 102. A partition plate 104 is provided on at least one of the side walls 17B of the processing chamber 17, dividing the extra-guard space 103 of the processing chamber 17 into upper and lower spaces. That is, the extra-guard space 103 is divided by the partition plate 104 into an upper space 103A above the partition plate 104 and a lower space 103B below the partition plate 104. The partition plate 104 is supported by the exhaust tub 100.

The upper space 103A includes a space above the partition plate 104 and inside the first cylindrical guard 80A (IS), and a space above the partition plate 104 and outside the first cylindrical guard 80A (OS).

The lower space 103B is divided into an inner lower space 105 located inside the guard IS relative to the exhaust tub 100, and an outer lower space 106 located outside the guard OS relative to the exhaust tub 100.

The atmosphere inside the processing chamber 17 is exhausted via an exhaust connection pipe 45 that penetrates the side wall 17B of the processing chamber 17 and the exhaust tub 100. The exhaust connection pipe 45 is connected to the exhaust piping 11 (see Figure 1) located in the exhaust section 10.

The FFU 26 creates an airflow F by sending clean air into the internal space 101 of the processing chamber 17. The airflow F passes from the upper space 103A through the guard interior space 102 or the lower space 103B and is sent to the exhaust connection pipe 45 of the exhaust unit 10. The airflow F flows into the lower space 103B through the gap G1 between the end of the partition plate 104 on the inner guard side IS and the first cylindrical guard 80A, or through the gap G2 formed at the end of the partition plate 104 on the outer guard side OS.

Airflow F1 flows into the inner lower space 105 through gap G1 and then flows from the inner lower space 105 into the exhaust connection pipe 45.

Airflow F2 flows into the outer lower space 106 through gap G2, then flows into the inner lower space 105 via opening 100a formed in the exhaust tub 100, and then flows into the exhaust connection pipe 45. Airflow F3 flows into the guard interior space 102, then flows from the guard interior space 102 into the exhaust connection pipe 45.

Air flows F1, F2, and F3 that flow into the exhaust connection pipe 45 flow into the exhaust pipe 11 housed in the exhaust unit 10 described above, and the switching mechanism 12 switches the destination of the flow between an acid exhaust pipe, an alkali exhaust pipe, and an organic exhaust pipe depending on the type of exhaust.

By adjusting the height position of the first cylindrical guard 80A, the size of the gap G1 between the partition plate 104 and the first cylindrical guard 80A can be adjusted. By adjusting the size of the gap G1, the flow rates of the airflows F1 to F3 can be adjusted.

Figure 4 is a schematic plan view illustrating the arrangement of the cup cleaning nozzles 28. Figure 5 is a schematic side view illustrating the spray direction of cleaning liquid sprayed from one cup cleaning nozzle 28. Figure 6 is a schematic plan view illustrating the spray direction of cleaning liquid sprayed from one cup cleaning nozzle 28.

Referring to FIG. 4 , the inclined surface 27a formed on the upper end of the outer circumferential surface of the boss casing 27 has a ring shape with a predetermined width in a plan view. Seven cup washing nozzles 28 are arranged on this ring-shaped inclined surface 27a at equal intervals in the circumferential direction around the rotation axis A1. In other words, the seven cup washing nozzles 28 are arranged at equal angular intervals around the rotation axis A1. More specifically, the seven cup washing nozzles 28 are arranged at angular intervals of approximately 51.4° on the inclined surface 27a, which extends in a ring shape in a plan view around the rotation axis A1. The seven cup washing nozzles 28 are arranged at positions spaced a predetermined distance (i.e., equal distances) radially from the rotation axis A1. The nozzle direction of each cup washing nozzle 28 is adjusted so that the washing liquid is sprayed outward from the inclined surface 27a in a fan-shaped manner in a substantially horizontal direction.

The central direction of the fan-shaped spray from each cup cleaning nozzle 28 is directed radially from the rotation axis A1, i.e., in a direction tilted at a predetermined angle θ (see Figure 6) circumferentially around the inclined surface 27a relative to the direction of the rotation radius. Therefore, when viewed from the rotation axis A1, the cleaning liquid sprayed from each cup cleaning nozzle 28 forms a fan shape tilted in one direction (to the left (counterclockwise) in the illustrated example) relative to the direction of the rotation radius, as depicted by the dots.

Referring to FIG. 5, the cup washing nozzle 28 may be attached by being screwed into the boss casing 27 from the inclined surface 27a. The cup washing nozzle 28 is a nozzle that sprays in a linear manner in a substantially horizontal direction when viewed from the side. That is, the cup washing nozzle 28 has a flat, fan-shaped spray profile that spreads horizontally and has almost no vertical spread. The horizontally linear spray of the cup washing nozzle 28 when viewed from the side may spread vertically by an angle β (0<β<20°) depending on the nozzle's performance. The washing liquid pipe 46 (more specifically, its branch portion 46a) that supplies washing liquid to the cup washing nozzle 28 is disposed within the boss casing 27. The flow rate of the washing liquid sprayed by one cup washing nozzle 28 is preferably set to 210 ml/min or less, for example. Setting the flow rate of the cleaning liquid to the above flow rate reduces the flow velocity at which the cleaning liquid sprayed from the cup cleaning nozzle 28 hits the inner surface of the cylindrical guard 80, and almost eliminates or minimizes the number of droplets of cleaning liquid that hit the inner surface of the cylindrical guard 80 and bounce back.

Referring to Figure 6, the cup cleaning nozzle 28 is a spray nozzle that sprays a fan-shaped spray that spreads outward at a predetermined angle 2α (120°≦2α≦140°) in a plan view. In this embodiment, the center of the spray direction of the cup cleaning nozzle 28 (the central direction of the fan-shaped spray profile) is not directed in the radial direction D1 that extends linearly outward from the rotation axis A1, but in a direction D2 that is tilted by a predetermined angle θ in the circumferential direction of the inclined surface 27a relative to the radial direction D1. Testing and evaluation of a prototype confirmed that the predetermined angle θ is preferably 10°≦θ≦30°.

By orienting the fan-shaped spray direction of the cup cleaning nozzles 28 in a plan view in a direction D2 tilted by a predetermined angle θ around the circumferential direction of the inclined surface 27a as described above, the spray distance of the cleaning liquid increases in the tilted angle direction. In other words, the distance from the cup cleaning nozzles 28 to the inner surface of the cylindrical guard 80 increases. This increases the area over which the cleaning liquid hits the inner surface of the cylindrical guard 80. As a result, the seven cup cleaning nozzles 28 can thoroughly wash the entire inner surface of the cylindrical guard 80 without leaving any gaps unwashed.

Figure 7 is a block diagram showing the electrical configuration of the main parts of the substrate processing apparatus 1. The controller 4 includes a microcomputer and controls the control objects provided in the substrate processing apparatus 1 according to a predetermined control program.

Specifically, the controller 4 may be a computer including a processor (CPU) 4A and a memory 4B that stores a control program. The controller 4 is configured to perform various controls for substrate processing by having the processor 4A execute the control program.

Controller 4's control targets include the indexer robot IR and multiple main transport robots CR. Controller 4's control targets also include actuators arranged in the exhaust unit 10, valves arranged in the fluid supply unit 9 (chemical liquid valve 51, upper rinse liquid valve 52, lower rinse liquid valve 53, lower gas valve 54, cleaning liquid valve 55), pumps (chemical liquid pump 61, upper rinse liquid pump 62, lower rinse liquid pump 63, cleaning liquid pump 64), and valves V1, V2, and V3 of processing liquid recovery paths 901, 903, and 904.

The objects controlled by the controller 4 further include the various components provided in the processing unit (spin motor 23, first nozzle movement unit 71, second nozzle movement unit 72, third nozzle movement unit 74, guard lifting unit 95, and FFU 26).

8 is a flowchart illustrating an example of substrate processing by the substrate processing apparatus 1. In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 8, a DHF processing step (step S1), a rinsing processing step (step S2), an AMP processing step (step S3), a rinsing processing step (step S4), an IPA processing step (step S5), and an _N2 drying processing and cup cleaning processing step (step S6) are performed in this order.

Figure 9 is a diagram that lists the cylindrical guard 80, drainage path, and exhaust path primarily used in each processing step shown in Figure 8.

The following mainly refers to Figures 3, 8, and 9. First, an unprocessed substrate W is transported from the carrier CA into the processing unit 5 by the indexer robot IR (see Figure 1) and one of the multiple main transport robots CR (see Figure 1), and then handed over to the spin chuck 15. As a result, the substrate W is held horizontally by the spin chuck 15 (substrate holding process).

The spin chuck 15 continues to hold the substrate W until the _N2 drying process and cup cleaning process (step S6) are completed. From the start of the substrate holding process until the _N2 drying process and cup cleaning process (step S6) are completed, the guard lifting unit 95 adjusts the height positions of the first cylindrical guard 80A and the second cylindrical guard 80B so that at least one cylindrical guard 80 is positioned in the upper position. With the substrate W held on the spin chuck 15, the spin motor 23 rotates the spin base 21. This starts rotation of the horizontally held substrate W (substrate rotation process). The rotation speed of the substrate W is, for example, 600 rpm or more and 1200 rpm or less.

Then, the lower gas valve 54 is opened to discharge gas from the lower gas flow path 25 (gas discharge step). The lower gas valve 54 is maintained in an open state until the _N2 drying process and cup cleaning process step (step S6) are completed. The flow rate of gas from the lower gas flow path 25 is, for example, 50 L/min. The exhaust flow rate is adjusted by the supply of gas from the lower gas flow path 25 and the inflow of gas by the FFU 26, and the internal pressure of the processing chamber 17 is adjusted to a predetermined pressure. The exhaust flow rate is, for example, 3 m ³ /min. In this case, the internal pressure of the processing chamber 17 is adjusted to -30 Pa.

Next, a DHF treatment process (step S1) is performed to clean the upper surface of the substrate W with DHF, an example of a chemical solution.

Specifically, the first nozzle movement unit 71 moves the chemical nozzle 31 to a processing position. The processing position of the chemical nozzle 31 is, for example, the central position.

With the chemical nozzle 31 in the processing position, the chemical valve 51 is opened. This causes DHF to be supplied (discharged) from the chemical nozzle 31 toward the central region of the top surface of the rotating substrate W (chemical supply process).

The DHF supplied to the upper surface of the substrate W spreads radially due to centrifugal force and is distributed over the entire upper surface of the substrate W. The DHF is then discharged from the periphery of the upper surface of the substrate W due to centrifugal force. As a result, the entire upper surface of the substrate W is cleaned with DHF.

The DHF discharged from the top surface of the substrate W is mainly received by the inclined surface of the first cylindrical guard 80A (Guard1). The DHF received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The DHF guided to the cylindrical surface is finally received by the corresponding cup 90A. When valve V1 is opened, the DHF received by cup 90A is collected into a specified collection container via the first processing liquid collection path 901.

During the DHF treatment process (step S1), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an acid exhaust pipe.

Next, a rinse process (step S2) is performed to clean the substrate W with a rinse liquid. Specifically, after the chemical liquid valve 51 is closed, the first nozzle movement unit 71 moves the chemical liquid nozzle 31 to the home position. After the chemical liquid valve 51 is closed, the second nozzle movement unit 72 moves the upper rinse liquid nozzle 32 to the processing position. The processing position of the upper rinse liquid nozzle 32 is, for example, the central position.

With the upper rinse liquid nozzle 32 positioned at the processing position, the upper rinse liquid valve 52 is opened. This causes rinse liquid to be supplied (discharged) from the upper rinse liquid nozzle 32 toward the central region of the upper surface of the rotating substrate W (upper rinse liquid supply process).

The rinse liquid supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The rinse liquid is then discharged from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is rinsed with the rinse liquid (upper rinsing process).

The rinse liquid discharged from the top surface of the substrate W is mainly received by the inclined surface of the first cylindrical guard 80A (Guard1). The rinse liquid received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The rinse liquid guided to the cylindrical surface is finally received by the corresponding cup 90A. When valve V1 is opened, the rinse liquid received by cup 90A is collected into a specified collection container via the first processing liquid recovery path 901.

During the rinsing process (step S2), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to become an acid exhaust pipe.

When supplying rinse liquid to the upper surface of the substrate W, the lower rinse liquid valve 53 may be opened to eject rinse liquid from the lower rinse liquid nozzle 33 (lower rinse liquid supply step). This allows the lower surface of the substrate W to be rinsed with rinse liquid (lower rinse step).

Next, an APM treatment process (step S3) is performed to clean the top surface of the substrate W with APM, an example of a chemical solution.

Specifically, the third nozzle movement unit 74 moves the chemical nozzle 34 to the processing position. The processing position of the chemical nozzle 34 is, for example, the central position.

With the chemical nozzle 34 in the processing position, the chemical valve 57 is opened. This causes APM to be supplied (discharged) from the chemical nozzle 34 toward the central region of the top surface of the rotating substrate W (chemical supply process).

The APM supplied to the upper surface of the substrate W spreads radially due to centrifugal force, and is distributed over the entire upper surface of the substrate W. The APM is then expelled from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is cleaned with the APM.

APM discharged from the top surface of the substrate W is mainly received by the inclined surface of the second cylindrical guard 80B (Guard2). The APM received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The APM guided to the cylindrical surface is finally received by the corresponding cup 90B. When valve V2 is opened, the APM received by cup 90B is collected into a specified collection container via flow path 902 and second processing liquid collection path 903.

During the APM treatment process (step S3), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to become the alkali exhaust pipe.

Next, a rinse process (step S4 (Rinse)) is performed to clean the substrate W with a rinse liquid. Specifically, after the chemical liquid valve 57 is closed, the third nozzle movement unit 74 moves the chemical liquid nozzle 34 to the home position. After the chemical liquid valve 57 is closed, the second nozzle movement unit 72 moves the upper rinse liquid nozzle 32 to the processing position. The processing position of the upper rinse liquid nozzle 32 is, for example, the central position.

With the upper rinse liquid nozzle 32 positioned at the processing position, the upper rinse liquid valve 52 is opened. This causes rinse liquid to be supplied (discharged) from the upper rinse liquid nozzle 32 toward the central region of the upper surface of the rotating substrate W (upper rinse liquid supply process).

The rinse liquid supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The rinse liquid is then discharged from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is rinsed with the rinse liquid (upper rinsing process).

The rinse liquid discharged from the top surface of the substrate W is mainly received by one of the inclined surfaces of the second cylindrical guard 80B (Guard2). The rinse liquid received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The rinse liquid guided to the cylindrical surface is finally received by the corresponding cup 90B. When valve V2 is opened, the rinse liquid received by cup 90B is collected into a specified collection container via flow path 902 and second processing liquid collection path 903.

During the rinsing process (step S4), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to become the alkali exhaust pipe.

In the rinse process of step S4, when supplying rinse liquid to the upper surface of the substrate W, the lower rinse liquid valve 53 may be opened to eject rinse liquid from the lower rinse liquid nozzle 33 (lower rinse liquid supply process). This allows the lower surface of the substrate W to be rinsed with rinse liquid (lower rinse process).

Next, an IPA treatment process (step S5) is performed to clean the top surface of the substrate W with IPA, a chemical solution. The IPA treatment process is an example of a VOC treatment process.

Specifically, the arm movement unit 35B moves the IPA nozzle 35 held by the arm 35A to a processing position. The processing position of the IPA nozzle 35 is, for example, the central position.

With the IPA nozzle 35 in the processing position, the valve 58 is opened and IPA is supplied to the IPA nozzle 35 through the pipe 48. The IPA is then supplied (speed) from the IPA nozzle 35 toward the central region of the top surface of the rotating substrate W.

The IPA supplied to the upper surface of the substrate W spreads radially due to centrifugal force, and is distributed over the entire upper surface of the substrate W. The IPA is then expelled from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is cleaned with IPA.

The IPA discharged from the top surface of the substrate W is mainly received by the inclined surface of the second cylindrical guard 80B (Guard2). The IPA received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The IPA guided to the cylindrical surface is finally received by the corresponding cup 90B. When valve V3 is opened, the IPA received by cup 90B is recovered into a specified recovery container via flow path 902 and third processing liquid recovery path 904.

During the IPA treatment process (step S5), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to become an organic exhaust pipe.

Next, a drying process (step S6 (N ₂ dry)) is performed to dry the substrate W using N ₂ gas. Specifically, the position of the IPA nozzle 35 remains in the above-mentioned process position, the valve 58 is closed, and the valve 59 is opened. As a result, N ₂ gas is supplied to the IPA nozzle 35 through the pipe 49, and the N ₂ gas is discharged from the IPA nozzle 35. As a result, the IPA on the surface of the substrate W is dried by the N ₂ gas. In the example of FIG. 9, the guard laterally facing the substrate W in the drying process is the first cylindrical guard 80A (Guard1).

In addition, during the drying process (step S6), the cup cleaning process (step S6) is carried out in parallel.

During the cup cleaning process, the cleaning liquid pump 64 is driven, the cleaning liquid valve 55 is opened, and a cleaning liquid such as DIW is supplied to multiple, specifically seven, cup cleaning nozzles 28 through the cleaning liquid piping 46. At this time, the supply power of the cleaning liquid pump 64 is controlled, and the flow rate of DIW flowing through the cleaning liquid piping 46 (specifically, its main pipe section 46b) is set to, for example, 1,500 ml/min. As a result, the flow rate of DIW supplied to each of the seven cup cleaning nozzles 28, in other words, the flow rate of DIW supplied to each cup cleaning nozzle 28, is approximately 210 ml/min.

As described above, each of the seven cup cleaning nozzles 28 sprays in a fan-shaped pattern in a plan view, with the spray center spraying over a wide area in a direction tilted by a predetermined angle θ in the circumferential direction. As a result, the IPA adhering to the inner surface of the second cylindrical guard 80B (inner guard: Guard2) of the cylindrical guard 80 is cleaned with DIW. The cleaning liquid (a mixture of IPA and DIW) is then collected in the cup 90B. When valve V3 is opened, the cleaning liquid collected by the cup 90B is collected into a designated collection container via the flow path 902 and the third processing liquid collection path 904.

During the IPA treatment process (step S5) and the _N2 drying and cup cleaning process (step S6), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an organic compound exhaust pipe.

As in this embodiment, when the N ₂ drying process (step S6) is performed, the cup cleaning process is performed in parallel, which has the effect of reducing the IPA concentration in the exhaust gas at the end of the recipe.

This is because, in the IPA processing step (step S5), IPA remains on the cylindrical guard 80, which causes a problem that the IPA concentration in the exhaust gas does not decrease by the time the recipe is completed. In this embodiment, a cup cleaning process is performed in parallel with the _N2 drying process to clean the IPA remaining on the cylindrical guard 80, thereby suppressing or preventing IPA from remaining on the cylindrical guard 80. As a result, the IPA concentration in the exhaust gas at the time the recipe is completed is reduced.

<Other embodiments>
The present invention is not limited to the above-described embodiment, and can be embodied in other forms.

For example, in the above-described embodiment, two cylindrical guards 80 (first cylindrical guard 80A and second cylindrical guard 80B) are provided. However, unlike the above-described embodiment, only one of the cylindrical guards 80 may be provided.

In the above embodiment, the _N2 drying process (step S6) using _N2 gas is performed. However, the drying process of the substrate W may be performed by, for example, a spin dry process without using _N2 gas. Even in this case, the IPA concentration in the exhaust gas at the end of the recipe can be reduced by performing a cup cleaning process in parallel with the spin dry process.

Furthermore, in the above-described embodiment, a partition plate 104 is provided. However, unlike the above-described embodiment, a configuration may be adopted in which the partition plate 104 is not provided and the outer guard space 103 is not divided into upper and lower sections. In this case, the exhaust connection pipe 45 opens into the side wall 17B of the processing chamber 17.

Furthermore, in the above-described embodiment, the substrate processing apparatus 1 is provided with multiple processing units 5, along with multiple substrate mounting parts 6, an indexer robot IR, multiple main transport robots CR, and a controller 4. However, the substrate processing apparatus may also be composed of only a single processing unit 5. In other words, the processing unit 5 may be an example of a substrate processing apparatus.

Note that, although the above-described embodiment uses expressions such as "along," "horizontal," and "vertical," these do not necessarily have to be strictly "along," "horizontal," and "vertical." In other words, these expressions allow for deviations in manufacturing precision, installation precision, etc.

In this specification, when numerical ranges are indicated using "to" (between), they include both endpoints unless otherwise specified.

Various other modifications may be made within the scope of the claims.

1: Substrate processing apparatus 4: Controller 5: Processing unit 9: Fluid supply unit 15: Spin chuck 16: Processing cup 20: Chuck pins 21: Spin base 22: Rotating shaft 23: Spin motor 27: Boss casing 27a: Inclined surface 28: Cup cleaning nozzle 30: Processing liquid nozzle 31, 34: Chemical liquid nozzle 32: Upper rinse liquid nozzle 33: Lower rinse liquid nozzle 35: IPA nozzle 41, 47: Chemical liquid pipe 42: Upper rinse liquid pipe 43: Lower rinse liquid pipe 44: Lower gas pipe 45: Exhaust connection pipe 46: Cleaning liquid pipe 48, 49: Pipes 51, 57: Chemical liquid valve 52: Upper rinse liquid valve 53: Lower rinse liquid valve 54: Lower gas valve 55: Cleaning liquid valve 58, 59: Valves 61, 67 : Chemical liquid pump 62 : Upper rinse liquid pump 63 : Lower rinse liquid pump 64 : Cleaning liquid pump 80, 80A, 80B : Cylindrical guard 90, 90A, 90B : Cup 95 : Guard lifting unit 901, 903, 904 : Processing liquid recovery path 902 : Flow path A1 : Rotation axis W : Substrate

Claims (7)

A substrate processing apparatus for processing a substrate,
a rotary holding member that holds a substrate and rotates the substrate around a predetermined rotation axis;
a cylindrical processing cup surrounding the rotary holding member;
a cup cleaning nozzle provided below the rotating holding member and configured to spray a cleaning liquid toward the processing cup in a fan shape in a plan view;
a plurality of the cup washing nozzles are arranged at positions spaced a predetermined distance radially from the rotation axis at equal intervals in a circumferential direction around the rotation axis,
In the substrate processing apparatus, each of the cup cleaning nozzles has a cleaning liquid ejection center facing in a direction that is tilted at a predetermined angle in the circumferential direction with respect to the radial direction. the processing cup includes a cylindrical guard that receives liquid splashed outward from the substrate rotated by the rotary holding member, and a cup that receives liquid guided downward by the cylindrical guard;
The substrate processing apparatus according to claim 1 , wherein each of the cup cleaning nozzles faces the inner circumferential surface of the cylindrical guard at a fixed interval. The substrate processing apparatus of claim 1 or 2, wherein the cup cleaning nozzle is a nozzle that sprays in a fan shape that spreads out at a predetermined angle when viewed from above, and sprays in a linear shape that is approximately horizontal when viewed from the side. The substrate processing apparatus of any one of claims 1 to 3, wherein the predetermined angle θ of the cup cleaning nozzle swung in the circumferential direction is 10°≦θ≦30°. The substrate processing apparatus of claim 4, wherein seven cup cleaning nozzles are provided. The substrate processing apparatus of any one of claims 1 to 5, wherein the cleaning liquid sprayed by the cup cleaning nozzle includes DIW (deionized water). A method for cleaning a processing cup in a substrate processing apparatus according to any one of claims 1 to 6, comprising:
A method for cleaning a processing cup in a substrate processing apparatus, in which a VOC processing step using VOCs (volatile organic compounds) is performed, followed by a substrate drying processing step, and the processing cup is cleaned using the cup cleaning nozzle in parallel with the drying processing step.