JP7788291B2 - Manufacturing method of electronic device and adhesive film - Google Patents

Description

The present invention relates to a method for manufacturing an electronic device and an adhesive film.

In dicing electronic component package assemblies (package dicing), the blade used is thick and the blade tip tends to be rounded, so by increasing the cutting depth, it is possible to cut the package cut surface perpendicularly. Therefore, a substrate thickness that corresponds to the cutting depth is required.
On the other hand, in recent years, in order to improve the reliability of electronic components, final testing in a high-temperature environment has increasingly been required for singulated components. Conventionally, the mainstream method for conducting final testing was to transfer the individual chips one by one using a robot, but a method for conducting final testing while the chips are fixed on dicing tape has also become known.

For high-temperature final testing, it is known that adhesive tape with a heat-resistant substrate such as PET can be used. However, if a heat-resistant substrate with the thickness required for deep cutting is used in the upstream dicing process, the substrate becomes too rigid, resulting in poor tape handling. However, handling can be improved by using a laminated substrate with a heat-resistant resin layer and a flexible resin layer. (See, for example, Patent Document 1.)

International Publication No. 2020/203287

Through research by the inventors, the following problems have been discovered with conventional methods for manufacturing electronic devices.

When conventional tape is used, the package electrodes and test electrodes are connected in the final test environment to perform electrical conductivity evaluation. However, there is a problem that the package position moves due to contact and pressure with the test electrodes, especially during high-temperature final tests at 100°C or higher.
That is, the present inventors have found that there is room for improvement in the positional accuracy of the chip when performing an operation test at high temperature on the individualized components.

The present invention was made in consideration of the above circumstances, and provides a manufacturing method and adhesive film for electronic devices that achieves good chip positioning accuracy even when performing operational tests on individualized components at high temperatures.

The inventors conducted extensive research to achieve the above objective. As a result, they discovered that by using a specific adhesive film, chip positioning accuracy can be improved even when performing operational tests on individualized components at high temperatures, leading to the completion of this invention.

The present invention provides the following method for manufacturing an electronic device and adhesive film.

[1]
A step (A) of preparing a structure including an adhesive film including a base layer, an intermediate layer, and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
a step (B) of dicing the electronic component with a dicing blade while the electronic component is attached to the adhesive film;
(C) a step of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60°C or higher and 200°C or lower;
A method for manufacturing an electronic device, comprising:
The method for manufacturing an electronic device, wherein the pressure-sensitive adhesive film has a compression strain rate S of 3% or less in an environment at 150°C, as measured according to the following <Method>.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm, and laminated until the original thickness is 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150°C, and the strain value [mm], which is the difference between the original thickness [mm] and the thickness [mm] during compression when a pressure of ¹⁰ kg/cm2 is applied, is measured, and the compression strain rate S [%] is calculated using the following formula.
Compression strain rate S [%] = {(strain value [mm]) / (original thickness [mm])} × 100
[2]
A step (A) of preparing a structure including an adhesive film including a base layer, an intermediate layer, and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
a step (B) of dicing the electronic component with a dicing blade while the electronic component is attached to the adhesive film;
(C) a step of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60°C or higher and 200°C or lower;
A method for manufacturing an electronic device, comprising:
The method for manufacturing an electronic device, wherein the intermediate layer contains a resin and has a gel fraction of 65% or more.
[3]
In the method for manufacturing an electronic device according to the above [1] or [2],
When the thickness of the base layer is _X1 and the thickness of the intermediate layer is _X2 ,
A method for manufacturing an electronic device, wherein the relationship _X2 > _X1 is satisfied.
[4]
In the method for manufacturing an electronic device according to any one of the above [1] to [3],
the thickness (X ₁ ) of the substrate layer is 1 μm or more and 100 μm or less;
The method for producing an electronic device, wherein the thickness (X ₂ ) of the intermediate layer is 10 μm or more and 500 μm or less.
[5]
In the method for manufacturing an electronic device according to any one of the above [1] to [4],
In the method for manufacturing an electronic device, the cross-sectional shape of the outer peripheral tip of the dicing blade is tapered, and when the tip diameter is R, the relationship X ₂ >R is satisfied.
[6]
In the method for manufacturing an electronic device according to any one of the above [1] to [5],
The method for producing an electronic device, wherein the base layer has a storage modulus E' at 85°C of 50 MPa or more and 10 GPa or less, and the intermediate layer has a storage modulus E' at 85°C of 1 MPa or more and less than 50 MPa.
[7]
In the method for manufacturing an electronic device according to any one of the above [1] to [6],
The method for manufacturing an electronic device, wherein the intermediate layer comprises a thermoplastic resin.
[8]
In the method for manufacturing an electronic device according to the above [7],
The method for producing an electronic device, wherein the thermoplastic resin comprises one or more resins selected from the group consisting of ethylene-α-olefin copolymers and ethylene-vinyl ester copolymers.
[9]
In the method for manufacturing an electronic device according to the above [8],
The method for producing an electronic device, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer.
[10]
In the method for manufacturing an electronic device according to any one of the above [1] to [9],
The method for producing an electronic device further comprises, after the step (B), a step (D) of picking up the diced electronic component from the adhesive film.
[11]
In the method for manufacturing an electronic device according to any one of the above [1] to [10],
The method for manufacturing an electronic device further comprises, after at least one of the steps (A) and (B), a step (F) of passing the substrate, while attached to the adhesive film, through solder reflow at a furnace temperature of 160°C or higher and 260°C or lower.
[12]
An adhesive film used in a dicing process for electronic components,
a substrate layer, an intermediate layer, and an adhesive resin layer in this order;
The pressure-sensitive adhesive film has a compression strain rate S of 3% or less in an environment at 150°C, measured according to the following <Method>.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm, and laminated until the original thickness is 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150°C, and the strain value [mm] (= (original thickness [mm]) - (thickness during compression [mm])) when a pressure of ^{10 kg/cm2} is applied is measured, and the compression strain rate S [%] is calculated using the following formula.
Compression strain rate S [%] = (strain value [mm]) / (original thickness [mm]) × 100
[13]
An adhesive film used in a dicing process for electronic components,
a substrate layer, an intermediate layer, and an adhesive resin layer in this order;
The pressure-sensitive adhesive film, wherein the intermediate layer contains a resin and has a gel fraction of 65% or more.
[14]
In the pressure-sensitive adhesive film according to the above [12] or [13],
When the thickness of the base layer is _X1 and the thickness of the intermediate layer is _X2 , the adhesive film satisfies the relationship _X2 > _X1 .
[15]
In the pressure-sensitive adhesive film according to any one of the above [12] to [14],
the thickness (X ₁ ) of the substrate layer is 1 μm or more and 100 μm or less;
The thickness (X ₂ ) of the intermediate layer is 10 μm or more and 500 μm or less.
[16]
In the pressure-sensitive adhesive film according to any one of the above [12] to [15],
The pressure-sensitive adhesive film has a storage modulus E' of 50 MPa or more and 10 GPa or less at 85°C of the base layer, and a storage modulus E' of 1 MPa or more and less than 50 MPa at 85°C of the intermediate layer.
[17]
In the pressure-sensitive adhesive film according to any one of the above [12] to [16],
The adhesive film, wherein the intermediate layer comprises a thermoplastic resin.
[18]
In the pressure-sensitive adhesive film according to the above [17],
The pressure-sensitive adhesive film comprises one or more thermoplastic resins selected from the group consisting of ethylene-α-olefin copolymers and ethylene-vinyl ester copolymers.
[19]
In the pressure-sensitive adhesive film according to the above [18],
The pressure-sensitive adhesive film, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer.

The present invention provides a manufacturing method and adhesive film for electronic devices that provide good chip positioning accuracy, even when performing operational tests on individualized components at high temperatures.

1 is a cross-sectional view schematically illustrating an example of the structure of an adhesive film according to an embodiment of the present invention. 1A to 1C are cross-sectional views schematically illustrating an example of a method for manufacturing an electronic device according to an embodiment of the present invention. 1A to 1C are cross-sectional views schematically illustrating an example of a method for manufacturing an electronic device according to an embodiment of the present invention. FIG. 10 is a cross-sectional view schematically showing an example of a state in which an electronic component is being cut using a dicing blade. FIG. 2 is a cross-sectional view schematically showing an example of a tip diameter R of a dicing blade.

Embodiments of the present invention will be described below with reference to the drawings. In all drawings, similar components are designated by the same reference numerals, and their descriptions will be omitted where appropriate. The drawings are schematic and do not reflect actual dimensional proportions. Numerical ranges such as "A to B" represent values greater than or equal to A and less than or equal to B, unless otherwise specified. In this embodiment, "(meth)acrylic" refers to acrylic, methacrylic, or both acrylic and methacrylic.

1. Adhesive Film The adhesive film 50 according to this embodiment will be described below.
FIG. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to an embodiment of the present invention.

As a first embodiment of the adhesive film 50 according to this embodiment, as shown in FIG. 1, the adhesive film 50 according to this embodiment is an adhesive film used to temporarily fix electronic components in the dicing process of the electronic components, and comprises a base layer 10, an intermediate layer 20, and an adhesive resin layer 30, in this order, and the compressive strain rate S of the adhesive film 50 in an environment of 150°C, measured according to the method described below, is 3% or less.

<Method>
The adhesive film is cut into a size of 10 mm x 10 mm, and laminated until the original thickness is 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150°C, and the strain value [mm] (= (original thickness [mm]) - (thickness during compression [mm])) when a pressure of ^{10 kg/cm2} is applied is measured, and the compression strain rate S [%] is calculated using the following formula.
Compression strain rate S [%] = (strain value [mm]) / (original thickness [mm]) × 100

The present inventors have conducted extensive research to realize an adhesive film that provides good chip positional accuracy even when performing operation tests on individualized components at high temperatures. As a result, they have found for the first time that by providing an intermediate layer 20 between the base material layer 10 and the adhesive resin layer 30 and setting the compressive strain rate S of the adhesive film 50 at 150°C to 3% or less, it is possible to ensure the rigidity of the adhesive film 50 in high-temperature environments and improve the chip positional accuracy.
Therefore, the adhesive film 50 of this embodiment is easy to handle, and also enables good chip positioning accuracy even when performing operation tests on individualized components at high temperatures.

In the adhesive film 50 of this embodiment, the upper limit of the compressive strain rate S at 150° C. is 3% or less, preferably 2% or less, and more preferably 1% or less. By setting the compressive strain rate S to the above upper limit or less, the rigidity of the adhesive film 50 in a high-temperature environment can be ensured, and the positional accuracy of the chip can be improved.
The lower limit of the compressive strain rate S at 150° C. is not particularly limited, but is, for example, 0% or more.

The compression strain rate S of the adhesive film 50 in this embodiment at 150°C can be adjusted, for example, by crosslinking using an electron beam as described below.

As a second embodiment of the adhesive film 50 according to this embodiment, as shown in FIG. 1, the adhesive film 50 according to this embodiment is an adhesive film used to temporarily fix electronic components in the dicing process of the electronic components, and comprises a base layer 10, an intermediate layer 20, and an adhesive resin layer 30, in this order, the intermediate layer 20 containing a resin, and the gel fraction of the intermediate layer 20 being 65% or more.

The present inventors have conducted extensive research to realize an adhesive film that provides good chip positional accuracy even when performing operation tests on individualized components at high temperatures. As a result, they have found for the first time that it is possible to ensure the rigidity of the adhesive film 50 in high-temperature environments and improve the chip positional accuracy by providing an intermediate layer 20 between the base material layer 10 and the adhesive resin layer 30 and setting the gel fraction of the intermediate layer 20 to 65% or more.
The reason for this is unclear, but a large gel fraction indicates that cross-linking is progressing, and therefore it is thought that the adhesive film 50 of this embodiment has high stability at high temperatures, and as a result, is able to maintain rigidity even in high-temperature environments.

In the adhesive film 50 of this embodiment, the lower limit of the gel fraction of the intermediate layer 20 is 60% or more, preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. By setting the gel fraction to the above lower limit or more, the rigidity of the adhesive film 50 in a high-temperature environment can be ensured, and the positional accuracy of the chip can be improved.
The upper limit of the gel fraction of the intermediate layer 20 is not particularly limited, but is, for example, 100% or less.

In this embodiment, the gel fraction of the intermediate layer 20 can be determined by the gel fraction of the intermediate layer resin used in the intermediate layer 20, and the gel fraction of the intermediate layer resin can be measured, for example, by the following method.
The intermediate layer resin is dissolved in a certain amount of chloroform while stirring. After dissolution, the remaining intermediate layer resin is recovered from the chloroform and the weight of the remaining resin is measured. The gel fraction is then calculated from the weight of the remaining resin and the weight before dissolution.

The gel fraction of the intermediate layer 20 of the adhesive film 50 in this embodiment can be adjusted, for example, by crosslinking using an electron beam as described below.

In the pressure-sensitive adhesive film 50 of the present embodiment, when the thickness of the base layer 10 is _X1 and the thickness of the intermediate layer 20 is _X2 , it is preferable to satisfy the relationship _X2 > _X1 . By satisfying this relationship, it is possible to obtain favorable pick-up properties for diced electronic components while having good linear side surfaces.

The overall thickness of the adhesive film 50 according to this embodiment is preferably 25 μm or more and 500 μm or less, more preferably 30 μm or more and 400 μm or less, and even more preferably 30 μm or more and 300 μm or less, in order to balance mechanical properties and ease of handling.

The adhesive film 50 according to this embodiment can be used to temporarily fix electronic components when dicing the electronic components in the manufacturing process of electronic devices. In other words, the adhesive film 50 according to this embodiment can be suitably used as a dicing tape in the process of dicing electronic components.

The total light transmittance of the adhesive film 50 according to this embodiment is preferably 80% or more, and more preferably 85% or more. This allows the adhesive film 50 to be transparent. Furthermore, by setting the total light transmittance of the adhesive film 50 to the above-mentioned lower limit or more, radiation can be more effectively irradiated onto the adhesive resin layer 30, thereby improving radiation irradiation efficiency. The total light transmittance of the adhesive film 50 can be measured in accordance with JIS K7361-1 (1997).

Next, we will explain each layer that makes up the adhesive film 50 according to this embodiment.

<Base material layer>
The base layer 10 is a layer provided for the purpose of improving the handleability, mechanical properties, heat resistance, and other properties of the pressure-sensitive adhesive film 50. Here, in this embodiment, heat resistance means the dimensional stability of the film or resin layer at high or low temperatures. In other words, the more excellent the heat resistance of a film or resin layer, the less likely it is that it will expand, shrink, or deform (e.g., soften), melt, or the like at high or low temperatures.

The base layer 10 is not particularly limited as long as it has sufficient mechanical strength to withstand the external force applied when dicing electronic components, and examples thereof include a resin film.
Furthermore, the base material layer 10 preferably has sufficient heat resistance to prevent deformation or melting to the extent that the electronic component 70 is displaced when the characteristics of the electronic component 70 are evaluated at high or low temperatures.
Examples of resins constituting the resin film include, from the viewpoint of excellent heat resistance, one or more selected from polyesters such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, and polybutylene naphthalate; polyamides such as nylon-6, nylon-66, and polymetaxylene adipamide; polyimides; polyetherimides; polyamideimides; polycarbonates; modified polyphenylene ethers; polyacetals; polyarylates; polysulfones; polyethersulfones; polyphenylene sulfide; polyetheretherketones; fluorine-based resins; liquid crystal polymers; vinylidene chloride resins; polybenzimidazoles; polybenzoxazoles; and polymethylpentenes.

Among these, from the viewpoint of an excellent balance of heat resistance, mechanical strength, transparency, price, etc., one or more selected from polyimide, polyamide, and polyester are preferred, at least one selected from polyethylene terephthalate and polyethylene naphthalate is more preferred, and polyethylene naphthalate is even more preferred.

The melting point of the substrate layer 10 is preferably 200° C. or higher, and more preferably 220° C. or higher. Alternatively, the substrate layer 10 preferably does not exhibit a melting point, and the decomposition temperature is more preferably 200° C. or higher, and even more preferably 220° C. or higher.
By using such a base layer 10, deformation of the adhesive film 50 can be further suppressed when the characteristics of the electronic component 70 are evaluated at high or low temperatures.

The substrate layer 10 may be a single layer or two or more layers.
The resin film used to form the base layer 10 may be in the form of a stretched film, or a film stretched uniaxially or biaxially.

In the adhesive film 50 according to this embodiment, from the viewpoint of further improving the handling properties, mechanical properties, heat resistance, and other properties of the adhesive film 50, the storage modulus E' of the base layer 10 at 85°C is preferably 50 MPa or more, more preferably 100 MPa or more, even more preferably 200 MPa or more, and preferably 10 GPa or less, more preferably 5 GPa or less.
The storage modulus E′ of the base layer 10 at 85° C. can be controlled within the above range by, for example, controlling the types and blending ratios of the components constituting the base layer 10 .

From the viewpoint of further improving the handling properties, mechanical properties, heat resistance, and other properties of the adhesive film 50, the thickness (X ₁ ) of the base material layer 10 is preferably 1 μm or more, more preferably 2 μm or more, even more preferably 3 μm or more, even more preferably 5 μm or more, and particularly preferably 10 μm or more.
Furthermore, from the viewpoint of facilitating handling when attaching the adhesive film, the thickness (X ₁ ) of the base material layer 10 is preferably 100 μm or less, more preferably 75 μm or less, even more preferably 50 μm or less, even more preferably 40 μm or less, and particularly preferably 30 μm or less.
The substrate layer 10 may be subjected to a surface treatment to improve adhesion to other layers, such as corona treatment, plasma treatment, undercoat treatment, or primer coat treatment.

<Middle class>
The intermediate layer 20 is a layer provided to adjust the thickness of the adhesive film 50 to a range that allows the tip of a dicing blade to cut into it while maintaining good flexibility on the adhesive resin layer 30 side of the adhesive film 50.
That is, by providing the intermediate layer 20, it is possible to obtain electronic components having good straight side surfaces and also to achieve good pick-up properties for the diced electronic components.

The resin constituting the intermediate layer 20 is not particularly limited as long as it can maintain good flexibility on the adhesive resin layer 30 side of the adhesive film 50 even when the thickness of the intermediate layer 20 is increased, but for example, a thermoplastic resin is preferred.
The thermoplastic resin according to the present embodiment is not particularly limited as long as it is a resin capable of forming the intermediate layer 20, and examples thereof include olefin-based resins such as ethylene-α-olefin copolymers containing ethylene and an α-olefin having 3 to 20 carbon atoms, high-density ethylene resins, low-density ethylene resins, medium-density ethylene resins, very-low-density ethylene resins, linear low-density polyethylene (LLDPE) resins, propylene (co)polymers, 1-butene (co)polymers, 4-methylpentene-1 (co)polymers, ethylene-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, ethylene-α-olefin-non-conjugated polyene copolymers, ethylene-α-olefin-conjugated polyene copolymers, ethylene-aromatic vinyl copolymers, and ethylene-α-olefin-aromatic vinyl copolymers; ethylene-ethyl (meth)acrylate copolymers, ethylene-methyl (meth)acrylate copolymers, ethylene-propyl (meth)acrylate copolymers, ethylene- One or more types selected from ethylene-(meth)acrylate copolymers such as butyl (meth)acrylate copolymer, ethylene-hexyl (meth)acrylate copolymer, ethylene-2-hydroxyethyl (meth)acrylate copolymer, ethylene-2-hydroxypropyl (meth)acrylate copolymer, and ethylene-glycidyl (meth)acrylate copolymer; ethylene-vinyl ester copolymers such as ethylene-vinyl acetate copolymer, ethylene-vinyl propionate copolymer, ethylene-vinyl butyrate copolymer, and ethylene-vinyl stearate copolymer; polyvinyl chloride; polyvinylidene chloride; polyolefin-based thermoplastic elastomers; polystyrene-based thermoplastic elastomers; polyurethane-based thermoplastic elastomers; 1,2-polybutadiene-based thermoplastic elastomers; trans-polyisoprene-based thermoplastic elastomers; chlorinated polyethylene-based thermoplastic elastomers; and polyester-based elastomers can be used.

Among these, at least one selected from ethylene-α-olefin copolymers and ethylene-vinyl ester copolymers is preferred, at least one selected from ethylene-α-olefin copolymers and ethylene-vinyl acetate copolymers is more preferred, and ethylene-vinyl acetate copolymers are even more preferred. In this embodiment, the above-mentioned resins may be used alone or in combination.
The content of vinyl acetate units in the ethylene-vinyl acetate copolymer is preferably 10% by mass or more and 35% by mass or less, more preferably 12% by mass or more and 30% by mass or less, and even more preferably 15% by mass or more and 25% by mass or less. When the content of vinyl acetate units is within this range, the balance of crosslinkability, flexibility, weather resistance, and transparency is even better.
The vinyl acetate content can be measured in accordance with JIS K6730.

The α-olefin in the ethylene-α-olefin copolymer, which is composed of ethylene and an α-olefin having 3 to 20 carbon atoms and is used as the thermoplastic resin in this embodiment, can typically be a single α-olefin having 3 to 20 carbon atoms, or a combination of two or more α-olefins having 3 to 20 carbon atoms. Among these, α-olefins having 10 or fewer carbon atoms are preferred, and α-olefins having 3 to 8 carbon atoms are particularly preferred. Examples of such α-olefins include propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 4-methyl-1-pentene, 1-octene, 1-decene, and 1-dodecene. Among these, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, and 1-octene are preferred due to their ease of availability. The ethylene-α-olefin copolymer may be a random copolymer or a block copolymer, but a random copolymer is preferred from the perspective of flexibility.

The thickness ( _X2 ) of the intermediate layer 20 is not particularly limited as long as it is a thickness that allows the thickness of the adhesive film 50 to be adjusted to a range that allows the tip of the dicing blade to cut sufficiently, but for example, it is preferably 10 μm or more, more preferably 20 μm or more, even more preferably 30 μm or more, even more preferably 50 μm or more, and particularly preferably 60 μm or more.
Furthermore, from the viewpoint of further improving the flexibility of the adhesive resin layer 30 side of the adhesive film 50, the thickness (X ₂ ) of the intermediate layer 20 is preferably 500 μm or less, more preferably 400 μm or less, even more preferably 300 μm or less, even more preferably 200 μm or less, even more preferably 150 μm or less, and particularly preferably 130 μm or less.

Here, a known dicing blade can be used as the dicing blade, such as a disc-shaped dicing blade having a cutting edge at the tip of the outer periphery of the disc that cuts the workpiece by coming into contact with the workpiece while rotating.
In this embodiment, it is preferable that the cross-sectional shape of the outer peripheral tip of the dicing blade is tapered, and that when the tip diameter of the dicing blade is R, the relationship _X2 > R is satisfied. This allows the tip of the dicing blade to sufficiently cut into the adhesive film 50, resulting in even better linearity of the side surfaces of the electronic component after dicing. In this embodiment, the tip diameter R of the dicing blade refers to the distance from part Y1 where the side surface of the dicing blade becomes non-linear to the tip Y2 of the dicing blade, as shown in FIG.

In the adhesive film 50 according to this embodiment, in order to further improve the handling properties, mechanical properties, heat resistance, etc. of the adhesive film 50, the storage modulus E' of the intermediate layer 20 at 85°C is preferably 1 MPa or more, more preferably 10 MPa or more, and in order to further improve the flexibility of the adhesive resin layer 30 side of the adhesive film 50, it is preferably less than 50 MPa.
The storage modulus E′ of the intermediate layer 20 at 85° C. can be controlled within the above range by, for example, controlling the types and blending ratios of the components constituting the intermediate layer 20 .

From the viewpoint of improving the heat resistance of the adhesive film 50, the intermediate layer 20 may be crosslinkable, and preferably contains a crosslinked product of the above-mentioned thermoplastic resin.
The crosslinking method for the intermediate layer 20 is not particularly limited as long as it can crosslink the resin that constitutes the intermediate layer 20, and examples thereof include crosslinking using a radical polymerization initiator, crosslinking using sulfur or a sulfur-based compound, and crosslinking using radiation such as ultraviolet light, electron beams, or gamma rays. Of these, crosslinking using electron beams is preferred.

In this case, the gel fraction of the resin that constitutes the intermediate layer 20 can be adjusted by crosslinking with an electron beam. When crosslinking the resin that constitutes the intermediate layer 20 of the adhesive film 50 according to this embodiment with an electron beam, the gel fraction of the resin that constitutes the intermediate layer 20 of the adhesive film 50 according to this embodiment can be adjusted to a predetermined range by setting the electron beam irradiation conditions, for example, to an acceleration voltage of 50 to 300 kV and an irradiation dose of 100 to 400 kGy.

The crosslinking with a radical polymerization initiator can be performed using a radical polymerization initiator that is used for crosslinking the resin that constitutes the intermediate layer 20. As the radical polymerization initiator, a known thermal radical polymerization initiator, a known photoradical polymerization initiator, or a combination of these can be used.
When the intermediate layer 20 is crosslinked using sulfur or a sulfur-based compound, a vulcanization accelerator, a vulcanization accelerator assistant, or the like may be blended into the intermediate layer 20 to perform crosslinking.
In any of the crosslinking methods, a crosslinking aid may be blended into the intermediate layer 20 to crosslink the intermediate layer 20 .

<Adhesive resin layer>
The adhesive resin layer 30 is a layer that comes into contact with and adheres to the surface of the electronic component 70 when the adhesive film 50 is attached to the electronic component 70 .

Adhesives that make up the adhesive resin layer 30 include (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives, and styrene adhesives. Among these, (meth)acrylic adhesives that use a (meth)acrylic polymer as the base polymer are preferred because they allow for easy adjustment of adhesive strength.

A radiation-crosslinkable adhesive whose adhesive strength is reduced by radiation can be used as the adhesive constituting the adhesive resin layer 30. The adhesive resin layer 30 made of the radiation-crosslinkable adhesive is crosslinked by irradiation with radiation and its adhesive strength is significantly reduced, making it easier to pick up the electronic component 70 from the adhesive resin layer 30 in the step of picking up the electronic component 70. Examples of radiation include ultraviolet rays, electron beams, and infrared rays.
As the radiation crosslinkable pressure sensitive adhesive, an ultraviolet crosslinkable pressure sensitive adhesive is preferred.

Examples of the (meth)acrylic polymer contained in the (meth)acrylic pressure-sensitive adhesive include a homopolymer of a (meth)acrylic acid ester compound and a copolymer of a (meth)acrylic acid ester compound and a comonomer. Examples of the (meth)acrylic acid ester compound include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, and glycidyl (meth)acrylate. These (meth)acrylic acid ester compounds may be used alone or in combination of two or more.
Examples of comonomers constituting the (meth)acrylic copolymer include vinyl acetate, (meth)acrylonitrile, (meth)acrylamide, styrene, (meth)acrylic acid, itaconic acid, (meth)acrylamide, methylol (meth)acrylamide, maleic anhydride, etc. These comonomers may be used alone or in combination of two or more.

The radiation-crosslinkable adhesive contains, for example, an adhesive such as the above-mentioned (meth)acrylic adhesive, a crosslinkable compound (a component having a carbon-carbon double bond), and a photopolymerization initiator or a thermal polymerization initiator.

Examples of crosslinkable compounds include monomers, oligomers, and polymers having a carbon-carbon double bond in the molecule and capable of crosslinking by radical polymerization. Examples of such crosslinkable compounds include esters of (meth)acrylic acid and polyhydric alcohols such as trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, and dipentaerythritol hexa(meth)acrylate; ester (meth)acrylate oligomers; and isocyanurates or isocyanurate compounds such as 2-propenyldi-3-butenyl cyanurate, 2-hydroxyethylbis(2-(meth)acryloxyethyl)isocyanurate, and tris(2-methacryloxyethyl)isocyanurate.
When the pressure-sensitive adhesive is a radiation-crosslinkable polymer having a carbon-carbon double bond in the side chain of the polymer, it is not necessary to add a crosslinking compound.

The content of the crosslinkable compound is preferably 5 to 100 parts by mass, and more preferably 10 to 50 parts by mass, per 100 parts by mass of the adhesive. By keeping the content of the crosslinkable compound within this range, it becomes easier to adjust the adhesive strength compared to when the content is less than this range, and compared to when the content is more than this range, a decrease in storage stability due to excessive sensitivity to heat and light is less likely to occur.

The photopolymerization initiator may be any compound that cleaves upon irradiation to generate radicals, such as benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; aromatic ketones such as benzil, benzoin, benzophenone, and α-hydroxycyclohexyl phenyl ketone; aromatic ketals such as benzil dimethyl ketal; polyvinyl benzophenone; and thioxanthones such as chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, and diethylthioxanthone.

Examples of thermal polymerization initiators include organic peroxide derivatives and azo-based polymerization initiators. Organic peroxide derivatives are preferred because they do not generate nitrogen when heated. Examples of thermal polymerization initiators include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxyesters, and peroxydicarbonates.

A crosslinking agent may be added to the adhesive. Examples of crosslinking agents include epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether; aziridine compounds such as tetramethylolmethane-tri-β-aziridinyl propionate, trimethylolpropane-tri-β-aziridinyl propionate, N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), and N,N'-hexamethylene-1,6-bis(1-aziridinecarboxamide); and isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanates. From the viewpoint of improving the balance between the heat resistance and adhesive strength of the adhesive resin layer 30, the content of the crosslinking agent is preferably 0.1 parts by mass or more and 10 parts by mass or less per 100 parts by mass of the (meth)acrylic adhesive resin.

The thickness of the adhesive resin layer 30 is not particularly limited, but is preferably 1 μm or more and 100 μm or less, more preferably 3 μm or more and 50 μm or less, and even more preferably 5 μm or more and 40 μm or less.

The adhesive resin layer 30 can be formed, for example, by applying an adhesive coating liquid onto the intermediate layer 20 .
The adhesive coating liquid can be applied by conventionally known coating methods, such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coater method, a comma coater method, or a die coater method. The drying conditions for the applied adhesive are not particularly limited, but it is generally preferable to dry the applied adhesive at a temperature range of 80 to 200°C for 10 seconds to 10 minutes. It is more preferable to dry the applied adhesive at 80 to 170°C for 15 seconds to 5 minutes. To sufficiently promote the crosslinking reaction between the crosslinker and the adhesive, the adhesive coating liquid may be heated at 40 to 80°C for about 5 to 300 hours after drying is complete.

<Other demographics>
The adhesive film 50 according to this embodiment may further include a release film laminated on the adhesive resin layer 30. Examples of the release film include a polyester film that has been subjected to a release treatment.

Specific examples of the adhesive film 50 according to this embodiment include an adhesive film having a layer structure of 25 μm biaxially oriented polyethylene naphthalate film, 120 μm ethylene-vinyl acetate copolymer film (vinyl acetate unit content 19% by mass), and 30 μm ultraviolet-crosslinkable adhesive resin layer, and an adhesive film having a layer structure of 50 μm biaxially oriented polyethylene terephthalate film, 70 μm ethylene-vinyl acetate copolymer film (vinyl acetate unit content 19% by mass), and 30 μm ultraviolet-crosslinkable adhesive resin layer.

<Method for producing adhesive film>
Next, an example of a method for manufacturing the adhesive film 50 according to this embodiment will be described.
The adhesive film 50 according to this embodiment can be obtained, for example, by forming an intermediate layer 20 on one side of a base layer 10 by an extrusion lamination method, applying an adhesive coating liquid onto the intermediate layer 20 that has been crosslinked by an electron beam, and then drying the liquid to form an adhesive resin layer 30.
The base material layer 10 and the intermediate layer 20 may be formed by co-extrusion molding, or may be formed by laminating a film-like base material layer 10 and a film-like intermediate layer 20 together.

In this case, the compressive strain rate S of the adhesive film 50 at 150°C can be adjusted by crosslinking the intermediate layer 20 with an electron beam. When crosslinking the resin that constitutes the intermediate layer 20 of the adhesive film 50 according to this embodiment with an electron beam, the compressive strain rate S of the adhesive film 50 according to this embodiment at 150°C can be adjusted to a predetermined range by setting the electron beam irradiation conditions, for example, to an acceleration voltage of 50 to 300 kV and an irradiation dose of 100 to 400 kGy.

The gel fraction of the resin that constitutes the intermediate layer 20 can also be adjusted by crosslinking with an electron beam. When crosslinking the resin that constitutes the intermediate layer 20 of the adhesive film 50 according to this embodiment with an electron beam, the gel fraction of the resin that constitutes the intermediate layer 20 of the adhesive film 50 according to this embodiment can be adjusted to a predetermined range by setting the electron beam irradiation conditions, for example, to an acceleration voltage of 50 to 300 kV and an irradiation dose of 100 to 400 kGy.

2. Method for Manufacturing the Electronic Device Next, a method for manufacturing the electronic device according to this embodiment will be described.
2 and 3 are cross-sectional views schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.
The method for manufacturing an electronic device according to this embodiment includes at least the following three steps, and preferably includes the following three steps in the following order.
(A) A step of preparing a structure 100 comprising an adhesive film 50 having a base layer 10, an intermediate layer 20, and an adhesive resin layer 30 in this order, and an electronic component 70 attached to the adhesive resin layer 30; (B) A step of dicing the electronic component 70 with a dicing blade while it is attached to the adhesive film 50; (C) A step of evaluating the characteristics of the electronic component while it is attached to the adhesive film 50 in a temperature environment of 60°C or higher and 200°C or lower. In the method for manufacturing an electronic device according to this embodiment, the adhesive film 50 is an adhesive film having the base layer 10, intermediate layer 20, and adhesive resin layer 30 in this order, and having a compressive strain rate S at 150°C of 3% or less, or an adhesive film in which the gel fraction of the intermediate layer 20 is 65% or higher.

The following describes each step in the manufacturing method for an electronic device according to this embodiment.

(Process (A))
First, a structure 100 is prepared, which includes an adhesive film 50 having a base layer 10, an intermediate layer 20, and an adhesive resin layer 30 in this order, and an electronic component 70 attached to the adhesive resin layer 30.

Such a structure can be obtained, for example, by attaching the electronic component 70 onto the adhesive resin layer 30 of the adhesive film 50 .
Examples of the electronic component 70 to be attached to the adhesive film 50 include semiconductor substrates (e.g., wafers) made of silicon, germanium, gallium-arsenide, gallium-phosphor, gallium-arsenide-aluminum, etc.; and package substrates in which multiple semiconductor chips are collectively sealed with sealing resin, such as mold array package substrates, fan-out package substrates, and wafer-level package substrates.
As the semiconductor substrate, it is preferable to use a semiconductor substrate having a circuit formed on its surface.

The adhesive film 50 may be applied manually, but is usually applied by an automatic application machine equipped with a roll of surface protection film.
There are no particular restrictions on the temperature of the adhesive film 50 and the electronic component 70 when they are attached, but a temperature of 25°C to 80°C is preferred.
There are no particular restrictions on the pressure between the adhesive film 50 and the electronic component 70 when they are attached, but a pressure of 0.3 MPa to 0.5 MPa is preferred.

(Process (B))
Next, while still attached to the adhesive film 50, the electronic component 70 is diced with a dicing blade to obtain a plurality of electronic components 70.
The term "dicing" used here refers to the operation of dividing the electronic component 70 to obtain a plurality of divided electronic components 70.
The dicing can be performed using, for example, a dicing blade having a tapered cross section at the tip of the outer periphery.

Note that the electronic components 70 in step (B) include multiple separated electronic components 70 obtained by dicing.

(Step (C))
Then, the electronic component 70 is heated in a temperature environment of 60°C or higher and 200°C or lower until the surface temperature of the electronic component 70 becomes the same temperature as the temperature environment, and then the characteristics of the electronic component 70 attached to the adhesive film 50 are evaluated.
The characteristic evaluation of the electronic component 70 is, for example, a test to check the operation of the electronic component 70, and can be performed using a probe card 92 having probe terminals 95 as shown in FIG. 3(c).
For example, probe terminals 95 connected to a tester via a probe card 92 are brought into contact with terminals 75 of the electronic component 70. This allows operating power, operational test signals, and the like to be exchanged between the electronic component 70 and the tester, making it possible to determine whether the operational characteristics of the electronic component 70 are good or bad.

The temperature environment in step (C) is 60°C or higher and 200°C or lower, with the lower limit being preferably 80°C or higher, more preferably 85°C or higher, and the upper limit being preferably 180°C or lower, more preferably 160°C or lower. This accelerates the deterioration of electronic components 70 that have inherent causes of defects, causing early defects in electronic components 70 to occur early, and allowing the defective products to be removed. This allows highly reliable electronic components 70 to be obtained with a high yield.
For example, the structure 100 can be placed in a thermostatic bath or oven, or heated by a heater provided on the sample stage 90, to create the above temperature environment.

(Process (D))
In the method for manufacturing an electronic device according to this embodiment, after step (B) or step (C), step (D) of picking up diced electronic components 70 from adhesive film 50 may be further carried out.
By this pick-up, the electronic component 70 can be peeled off from the adhesive film 50. The pick-up of the electronic component 70 can be carried out by a known method.

(Step (E))
In the method for manufacturing an electronic device according to this embodiment, a step (E) may be further carried out before the step (D), in which the adhesive film 50 is irradiated with radiation to crosslink the adhesive resin layer 30, thereby reducing the adhesive strength of the adhesive resin layer 30 to the electronic component 70.
By performing the step (E), the electronic component 70 can be easily picked up from the adhesive resin layer 30. In addition, contamination of the surface of the electronic component 70 by the adhesive component constituting the adhesive resin layer 30 can be suppressed.
For example, the radiation is applied from the surface of the adhesive film 50 opposite to the surface on the adhesive resin layer 30 side.

When ultraviolet rays are used as the radiation, the dose of ultraviolet rays irradiated onto the adhesive film 50 is preferably 100 mJ/cm ² or more, and more preferably 350 mJ/cm ² or more.
When the dose of ultraviolet light is equal to or greater than the lower limit, the adhesive strength of the adhesive resin layer 30 can be sufficiently reduced, and as a result, the occurrence of adhesive residue on the surface of the electronic component 70 can be further suppressed.
The upper limit of the dose of ultraviolet light irradiated onto the adhesive film 50 is not particularly limited, but from the viewpoint of productivity, it is, for example, 1500 mJ/cm ² or less, and preferably 1200 mJ/cm ² or less.
The ultraviolet irradiation can be carried out using, for example, a high-pressure mercury lamp or an LED.

(Process (F))
In the method for manufacturing an electronic device according to this embodiment, after at least one of the steps (A) and (B), it is preferable to carry out step (F), in which the solder material is melted and shaped and adhered to the surface by passing it through a solder reflow furnace at a furnace temperature of 160°C or higher and 260°C or lower while it is attached to an adhesive film.
By performing step (F), the shaping and adhesion of the terminals 75 of the electronic component 70 are improved, and deformation, damage, and detachment of the terminals 75 that occur when the probe terminals 95 contact the terminals 75 in step (C) can be suppressed.
In this case, the step (E) may be carried out before the step (F), or the step (E) may be carried out after the step (F).

As described above, step (F) is preferably performed after at least one of steps (A) and (B). That is, in the method for producing an electronic component according to the present embodiment, step (F) may be performed on structure 100 before dicing, or on electronic component 70 attached to adhesive film 50 after dicing structure 100, or step (F) may be performed both before and after dicing structure 100.
Furthermore, step (F) may be performed after step (C) in addition to being performed after at least one of steps (A) and (B). By doing so, deformation, damage, and detachment of terminals 75 in the subsequent manufacturing process of the electronic device can be further suppressed, and highly reliable electronic component 70 can be efficiently obtained.

In step (F), the electronic device can be subjected to solder reflow at a furnace temperature of preferably 160°C or higher and 260°C or lower, more preferably 165°C or higher and 255°C or lower, and even more preferably 170°C or higher and 250°C or lower.
By setting the temperature inside the furnace within the above range, the solder material can be efficiently melted and formed, and adhered to the surface of the electronic device, and highly reliable electronic components 70 can be efficiently obtained.
The method of solder reflow treatment is not particularly limited, but for example, it can be performed using a known reflow furnace.

(Other processes)
The method for manufacturing an electronic device according to this embodiment may include other steps in addition to those described above. As the other steps, known steps in the manufacture of electronic devices can be used.

For example, after performing step (D), any steps commonly performed in the manufacturing process of electronic devices, such as mounting the obtained electronic component 70 on a circuit board, wire bonding, or sealing, may be further performed.

The above describes embodiments of the present invention, but these are merely examples of the present invention, and various other configurations may also be adopted.

The present invention is not limited to the above-described embodiments, and any modifications or improvements that achieve the objectives of the present invention are included in the present invention.

The present invention will be explained in detail below using examples, but the present invention is not limited to these examples.

Details of the materials used to make the adhesive film are as follows:

<Resin for intermediate layer>
An ethylene-vinyl acetate copolymer (EVA, manufactured by Mitsui Dow Chemical Company, product name: EV450, vinyl acetate content: 19% by mass) was used.
EVA was crosslinked by irradiating it with an electron beam in a nitrogen atmosphere under the following conditions to produce EVA1 to EVA3. The gel fraction was adjusted by the electron beam irradiation conditions.
EVA1 conditions: Gel fraction 82% at an acceleration voltage of 145 kV and an irradiation dose of 200 kGy
EVA2 conditions: Gel fraction 71% at an acceleration voltage of 135 kV and an exposure dose of 220 kGy
EVA3 conditions: acceleration voltage 105 kV, exposure dose 200 kGy, gel fraction 63%
When electron beam crosslinking was not performed, the gel fraction was 0%.

The gel fraction of each intermediate layer resin was measured by the following method.
40 g of each intermediate layer resin was dissolved in 10 mL of chloroform at 50° C. with stirring for 60 minutes. After dissolution, the remaining intermediate layer resin was recovered from the chloroform, and the weight of the remaining resin was measured. The gel fraction was then calculated from the weight of the remaining resin and the weight before dissolution using the following formula.
Gel fraction [%] = (weight of undissolved substance [g]) / (weight before dissolution [g]) × 100

<Adhesive A>
30 parts by weight of butyl acrylate, 5 parts by weight of acrylic acid, and 70 parts by weight of methyl acrylate were copolymerized and reacted in ethyl acetate to obtain an acrylic acid ester copolymer solution.
To this solution, 7 parts by weight of a photoinitiator (Omnirad 651: IGM Resins B.V.), 0.3 parts by weight of an isocyanate-based crosslinking agent (manufactured by Mitsui Chemicals, Inc., trade name: Olestar P49-75S), and 50 parts by weight of pentaerythritol tetraacrylate (manufactured by Shin-Nakamura Chemical, trade name: NK Ester A-TMM-3) as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in one molecule were added relative to 100 parts by weight of the copolymer (solid content), thereby obtaining a UV-curable pressure-sensitive adhesive A.

<Adhesive B>
50 parts by weight of ethyl acrylate, 30 parts by weight of 2-ethylhexyl acrylate, and 20 parts by weight of methyl acrylate were copolymerized and reacted in ethyl acetate. After the reaction was completed, the solution was cooled, and 25 parts by weight of xylene, 2.5 parts by weight of acrylic acid, and 1.5 parts by weight of tetradecylbenzylammonium chloride were added thereto. The mixture was reacted at 80°C for 10 hours while blowing air into the mixture, yielding an acrylate copolymer solution having a photopolymerizable carbon-carbon double bond introduced therein.
To this solution, 7 parts by weight of benzoin as a photoinitiator, 2 parts by weight of an isocyanate-based crosslinking agent (manufactured by Mitsui Chemicals, Inc., trade name: OLESTAR P49-75S), and 15 parts by weight of dipentaerythritol hexaacrylate (manufactured by Toagosei Co., Ltd., trade name: ARONIX M-400) as a low molecular weight compound having two or more photopolymerizable carbon-carbon double bonds in one molecule were added relative to 100 parts by weight of the copolymer (solid content), thereby obtaining a UV-curable pressure-sensitive adhesive B.

[Example 1]
EVA was extrusion-molded to a thickness of 120 μm as an intermediate layer onto a polyethylene naphthalate (PEN) film (thickness: 25 μm) as a substrate layer. The surface of the intermediate layer was then irradiated with electron beams under the EVA1 conditions, forming EVA1 as the intermediate layer. Pressure-sensitive adhesive A was then applied to the surface and dried to form a 30 μm thick adhesive resin layer. This resulted in an adhesive film comprising, in this order, a substrate layer, an intermediate layer, and an adhesive resin layer.

[Example 2]
An intermediate layer of EVA was extrusion molded to a thickness of 70 μm onto a polyethylene terephthalate (PET) film (50 μm thick) as a substrate layer. The surface of the intermediate layer was then irradiated with electron beams under EVA2 conditions, forming EVA2 as the intermediate layer. Pressure-sensitive adhesive A was then applied to the surface and dried to form a 30 μm thick adhesive resin layer. This resulted in an adhesive film comprising a substrate layer, an intermediate layer, and an adhesive resin layer in this order.

[Example 3]
An adhesive film was obtained in the same manner as in Example 2, except that EVA3 conditions were used instead of the electron beam EVA2 conditions, and EVA3 was used as the intermediate layer.

[Comparative Example 1]
After forming an EVA film to a thickness of 120 μm as an intermediate layer, adhesive B was applied to the surface of the intermediate layer without irradiating the surface with an electron beam. This was then dried to form an adhesive resin layer with a thickness of 10 μm. This resulted in an adhesive film having an intermediate layer and an adhesive resin layer in this order.
The compression strain rate S of the adhesive film of Comparative Example 1 at 150°C was 62.9%.

(Compression strain rate S)
The compression strain ratio S of the adhesive films obtained in the examples and comparative examples was measured by the following method.
The adhesive films obtained in the examples and comparative examples were cut into pieces measuring 10 mm x 10 mm, and then laminated until the original thickness was reduced to 5 mm to obtain measurement samples.
The obtained measurement sample was compressed at a test speed of 5 mm/min using an AG-100kNX (Shimadzu Corporation) in an environment of 150°C. The strain value [mm] (= (original thickness [mm]) - (thickness during compression [mm])) when a pressure of 10 kg/ ^cm2 was applied was then measured, and the compression strain rate S [%] was calculated using the following formula. The results are shown in Table 1.
Compression strain rate S [%] = (strain value [mm]) / (original thickness [mm]) × 100

<Evaluation>
The resulting adhesive film was evaluated as follows, and the results are shown in Table 1.

(1) Chip position accuracy A silicon wafer was attached to the adhesive surface of the adhesive film of each example and comparative example, and the silicon wafer and the adhesive film attached to the silicon wafer were diced into 10 mm x 10 mm. The distance between the chips (before heating) was observed and measured using a microscope.
The base layer side of the adhesive film attached to the silicon wafer was then fixed by suction to a vacuum chuck table heated to 150°C, and removed after 10 minutes. After the adhesive film was cooled to room temperature, the distance between the chips (after heating) was observed and measured using a microscope. The chip position deviation was calculated from the difference between (before heating) and (after heating).
Then, the chip position accuracy was evaluated according to the following criteria.
○ (Good): The chip position is shifted less than 10 μm × (Bad): The chip position is shifted more than 10 μm

The adhesive films of Examples 1 to 3 had good chip positioning accuracy.

10 Base layer 20 Intermediate layer 30 Adhesive resin layer 50 Adhesive film 50A Adhesive film 60 Dicing blade 70 Electronic component 70A Electronic component 75 Terminal 90 Sample stage 92 Probe card 95 Probe terminal 100 Structure

Claims (19)

A step (A) of preparing a structure including an adhesive film including a base layer, an intermediate layer, and an adhesive resin layer in this order, and an electronic component attached to the adhesive resin layer;
a step (B) of dicing the electronic component with a dicing blade while the electronic component is attached to the adhesive film;
(C) a step of evaluating the characteristics of the electronic component attached to the adhesive film in a temperature environment of 60°C or higher and 200°C or lower;
A method for manufacturing an electronic device, comprising:
The method for manufacturing an electronic device, wherein the pressure-sensitive adhesive film has a compression strain rate S of 3% or less in an environment at 150°C, as measured according to the following <Method>.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm, and laminated until the original thickness is 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150°C, and the strain value [mm], which is the difference between the original thickness [mm] and the thickness [mm] during compression when a pressure of ¹⁰ kg/cm2 is applied, is measured, and the compression strain rate S [%] is calculated using the following formula.
Compression strain rate S [%] = {(strain value [mm]) / (original thickness [mm])} × 100 2. The method for manufacturing an electronic device according to claim 1,
The method for manufacturing an electronic device, wherein the intermediate layer contains a resin and has a gel fraction of 60 % or more. 3. The method for manufacturing an electronic device according to claim 1,
When the thickness of the base layer is _X1 and the thickness of the intermediate layer is _X2 ,
A method for manufacturing an electronic device, wherein the relationship _X2 > _X1 is satisfied. The method for manufacturing an electronic device according to any one of claims 1 to 3,
the thickness (X ₁ ) of the substrate layer is 1 μm or more and 100 μm or less;
The method for manufacturing an electronic device, wherein the thickness (X ₂ ) of the intermediate layer is 10 μm or more and 500 μm or less. The method for manufacturing an electronic device according to any one of claims 1 to 4,
In the method for manufacturing an electronic device, the cross-sectional shape of the outer peripheral tip of the dicing blade is tapered, and when the tip diameter is R, the relationship X ₂ >R is satisfied. The method for manufacturing an electronic device according to any one of claims 1 to 5,
A method for manufacturing an electronic device, wherein the base layer has a storage modulus E' at 85°C of 50 MPa or more and 10 GPa or less, and the intermediate layer has a storage modulus E' at 85°C of 1 MPa or more and less than 50 MPa. The method for manufacturing an electronic device according to any one of claims 1 to 6,
The method for manufacturing an electronic device, wherein the intermediate layer comprises a thermoplastic resin. 8. The method for manufacturing an electronic device according to claim 7,
The method for producing an electronic device, wherein the thermoplastic resin comprises one or more resins selected from the group consisting of ethylene-α-olefin copolymers and ethylene-vinyl ester copolymers. 9. The method for manufacturing an electronic device according to claim 8,
The method for manufacturing an electronic device, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer. The method for manufacturing an electronic device according to any one of claims 1 to 9,
The method for producing an electronic device further comprises, after the step (B), a step (D) of picking up the diced electronic component from the adhesive film. The method for manufacturing an electronic device according to any one of claims 1 to 10,
The method for manufacturing an electronic device further comprises, after at least one of the steps (A) and (B), a step (F) of passing the substrate, while attached to the adhesive film, through solder reflow at a furnace temperature of 160°C or higher and 260°C or lower. An adhesive film used in a dicing process for electronic components,
a substrate layer, an intermediate layer, and an adhesive resin layer in this order;
The pressure-sensitive adhesive film has a compression strain rate S of 3% or less in an environment at 150°C, measured according to the following <Method>.
<Method>
The adhesive film is cut into a size of 10 mm x 10 mm, and laminated until the original thickness is 5 mm to obtain a measurement sample.
The obtained measurement sample is compressed at a test speed of 5 mm/min in an environment of 150°C, and the strain value [mm] (= (original thickness [mm]) - (thickness during compression [mm])) when a pressure of ^{10 kg/cm2} is applied is measured, and the compression strain rate S [%] is calculated using the following formula.
Compression strain rate S [%] = (strain value [mm]) / (original thickness [mm]) × 100 The adhesive film according to claim 12,
The pressure-sensitive adhesive film, wherein the intermediate layer contains a resin and has a gel fraction of 60 % or more. The adhesive film according to claim 12 or 13,
An adhesive film, wherein when the thickness of the base layer is _X1 and the thickness of the intermediate layer is _X2 , the relationship _X2 > _X1 is satisfied. The adhesive film according to any one of claims 12 to 14,
the thickness (X ₁ ) of the substrate layer is 1 μm or more and 100 μm or less;
The thickness (X ₂ ) of the intermediate layer is 10 μm or more and 500 μm or less. The adhesive film according to any one of claims 12 to 15,
The adhesive film has a storage modulus E' of 50 MPa or more and 10 GPa or less at 85°C of the base layer, and a storage modulus E' of 1 MPa or more and less than 50 MPa at 85°C of the intermediate layer. The adhesive film according to any one of claims 12 to 16,
An adhesive film, wherein the intermediate layer comprises a thermoplastic resin. The adhesive film according to claim 17,
The pressure-sensitive adhesive film comprises one or more thermoplastic resins selected from the group consisting of ethylene-α-olefin copolymers and ethylene-vinyl ester copolymers. The adhesive film according to claim 18,
The adhesive film, wherein the ethylene-vinyl ester copolymer comprises an ethylene-vinyl acetate copolymer.