JP7794540B2 - Heat Treatment Equipment - Google Patents

Description

This disclosure relates to a heat treatment device.

Patent Documents 1 and 2 each disclose a mounting table structure for mounting an object to be processed, which includes a mounting table equipped with a heating means and a support column that connects and supports the mounting table. Patent Document 3 also discloses a stage that includes a plate in which a heater is embedded and a stem that supports the plate.

JP 2009-054871 A JP 2011-165891 A Japanese Patent Application Laid-Open No. 2004-207465

This disclosure provides a substrate heating device that suppresses heat conduction from a base that heats a placed substrate to a support.

According to one aspect of the present disclosure, there is provided a heat treatment apparatus comprising: a base having a first surface on which a substrate is placed and a second surface opposite the first surface, the base having an internal heater; and a support connected to the second surface side, the base having a first threaded portion on the second surface side, and the support having a second threaded portion fastened to the first threaded portion.

This disclosure provides a substrate heating device that suppresses heat conduction from a base that heats a placed substrate to a support.

FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus in which a heat treatment apparatus according to the first embodiment is used. FIG. 2 is a schematic cross-sectional view of the heat treatment apparatus according to the first embodiment. FIG. 3 is a perspective view of the heat treatment apparatus according to the first embodiment. FIG. 4 is a cross-sectional view of the heat treatment apparatus according to the first embodiment. FIG. 5 is a bottom view of the base of the heat treatment apparatus according to the first embodiment. FIG. 6 is a cross-sectional view of a shaft portion of a support portion of the heat treatment apparatus according to the first embodiment. FIG. 7 is a schematic cross-sectional view of a heat treatment apparatus according to the second embodiment. FIG. 8 is a schematic cross-sectional view of a heat treatment apparatus of a comparative example.

The following describes embodiments of the present disclosure with reference to the drawings. Note that in this specification and drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

In directions such as parallel, right-angled, orthogonal, horizontal, vertical, up/down, left/right, deviations are permitted to the extent that they do not impair the effects of the embodiment. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right-angled, orthogonal, horizontal, and vertical may also include approximately parallel, approximately right-angled, approximately orthogonal, approximately horizontal, and approximately vertical.

First Embodiment
[Substrate Processing Apparatus 100]
A substrate processing apparatus 100 in which a heat treatment apparatus 2 according to the first embodiment is used will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view of the substrate processing apparatus 100 in which a heat treatment apparatus 2 according to the first embodiment is used.

The substrate processing apparatus 100 includes a processing chamber 1, a heat treatment device 2, a shower head 3, an exhaust unit 4, a gas supply mechanism 5, a high-frequency power supply unit 6, and a control unit 7. Each component will be described below.

[Processing vessel 1]
The processing vessel 1 is made of a metal such as aluminum and has a substantially cylindrical shape. The processing vessel 1 accommodates a substrate W. A loading/unloading port 11 is formed in a sidewall of the processing vessel 1 for loading or unloading the substrate W. The loading/unloading port 11 is opened and closed by a gate valve 12.

A circular exhaust duct 13 with a rectangular cross section is provided on the main body of the processing vessel 1. A slit 13a is formed along the inner peripheral surface of the exhaust duct 13. An exhaust port 13b is formed in the outer wall of the exhaust duct 13.

A ceiling wall 14 is provided on the upper surface of the exhaust duct 13, blocking the upper opening of the processing vessel 1 via an insulating member 16. A seal ring 15 provides an airtight seal between the exhaust duct 13 and the insulating member 16. A partition member 17 divides the interior of the processing vessel 1 into upper and lower sections.

A cooling unit 18 for cooling the heat treatment device 2 is provided on the underside of the processing vessel 1. A flow path is provided inside the cooling unit 18 through which a refrigerant, such as cooling water, flows. An opening 18h is formed in the cooling unit 18 to which wiring, etc. can be added.

[Heat treatment device 2]
The heat treatment device 2 supports the substrate W horizontally within the processing chamber 1. The heat treatment device 2 includes a base 21 and a support portion 22. The base 21 is formed in a disk shape corresponding to the size of the substrate W. The base 21 is supported by the support portion 22. The support portion 22 includes a shaft portion 22a and an attachment portion 22b. The heat treatment device 2 is provided with a cover member 24 made of ceramics such as alumina so as to cover the outer peripheral region of the top surface and the side surfaces.

Figure 2 is a schematic cross-sectional view showing the heat treatment device 2 according to the first embodiment attached to the cooling unit 18. Figure 3 is a perspective view of the heat treatment device 2 according to the first embodiment. Figure 4 is a cross-sectional view of the heat treatment device 2 according to the first embodiment. Note that the heater 21h is omitted in Figure 4.

The base 21 has a disk-like shape. The shaft portion 22a of the support portion 22 has a cylindrical shape. The mounting portion 22b of the support portion 22 has a ring-like shape with a rectangular cross section.

The heat treatment device 2 is attached to the cooling part 18 of the processing vessel 1. Specifically, the attachment part 22b of the heat treatment device 2 is sandwiched between the fixing part 22c and the cooling part 18, thereby attaching the heat treatment device 2 to the cooling part 18. The fixing part 22c is fixed to the cooling part 18 with screws 22n.

The base 21 has a heater 21h inside. In other words, the heater 21h is embedded inside the base 21.

The heater 21h heats the substrate W. The heater 21h generates heat when power is supplied from the heater power supply 23. The output of the heater 21h is controlled by a temperature signal from a thermocouple 23tc provided near the top surface of the base 21. By controlling the output of the heater 21h using the temperature signal from the thermocouple 23tc, the substrate W is controlled to a predetermined temperature. The heater power supply 23 supplies power to the heater 21h.

(Base 21)
The base 21 supports the substrate W and heats the substrate W. The base 21 has an upper surface 21S1 and a lower surface 21S2 located opposite the upper surface 21S1. The substrate W is supported on the upper surface 21S1. A support 22 is connected to the lower surface 21S2.

The base 21 is made of a machinable ceramic. The machinable ceramic has high heat resistance. Because of its high heat resistance, the machinable ceramic is suitable for applications in which the substrate W is heated to 300°C or higher. Furthermore, the machinable ceramic has higher thermal shock resistance than conventionally used aluminum nitride (AlN) and alumina (Al ₂ O ₃ ). Furthermore, the machinable ceramic has high workability for cutting and the like. Furthermore, the machinable ceramic has relatively high corrosion resistance.

Silicon-based ceramics such as silicon nitride (SiN), silicon carbide (SiC), silicon oxide (SiO), or mixtures thereof, and boron nitride-based ceramics are suitable for use as machinable ceramics. Machinable ceramics may also contain mica components.

Figure 5 is a bottom view of the base 21 of the heat treatment apparatus 2 according to the first embodiment. The base 21 is formed, for example, by cutting a disk-shaped piece of machinable ceramic. The base 21 has a groove 21g on the lower surface 21S2 side that is annular in bottom view. The groove 21g is formed by cutting inward from the lower surface 21S2.

The groove portion 21g has a first side surface 21g1 located toward the center of the base 21 in a bottom view, a second side surface 21g2 located outside the base 21 in a bottom view, and a bottom surface 21g3 that is approximately parallel to the bottom surface 21S2. The bottom surface 21g3 is connected to the top surface 21S1 sides of the first side surface 21g1 and the second side surface 21g2.

The base 21 has a groove 21g formed therein, which provides a protrusion 21e surrounded by the groove 21g when viewed from below. The protrusion 21e is formed in a cylindrical shape with the first side surface 21g1 of the groove 21g as its lateral surface. A male thread 21s is formed on the lateral surface of the protrusion 21e, i.e., the first side surface 21g1. The male thread 21s is formed, for example, by cutting. The male thread 21s fastens to a female thread 22as formed on the shaft portion 22a.

The base 21 is made of a machinable ceramic and has a coating layer 21r such as aluminum nitride (AlN) on its surface. By providing a coating layer 21r such as aluminum nitride (AlN), resistance to halogens (halogen resistance) can be improved.

(Support part 22)
The support part 22 supports the base 21. The support part 22 is provided between the base 21 and the cooling part 18. The support part 22 is connected to the lower surface 21S2 side of the base 21.

The support portion 22 is made of the same machinable ceramic as the base 21. In other words, the shaft portion 22a and the mounting portion 22b are each made of machinable ceramic. The shaft portion 22a and the mounting portion 22b may each be made of the same ceramic material as the base 21.

(Shaft portion 22a)
6 is a cross-sectional view of the shaft portion 22a of the support portion 22 of the heat treatment device 2 according to the first embodiment. The shaft portion 22a is formed, for example, by cutting a cylindrical piece of machinable ceramic. The shaft portion 22a has a cylindrical shape with an inner surface 22a1 and an outer surface 22a2.

A female thread 22as is formed on the inner surface 22a1 of the end of the shaft 22a facing the base 21. The female thread 22as is formed, for example, by cutting. The female thread 22as fastens to the male thread 21s of the base 21.

In the heat treatment device 2 according to this embodiment, the base 21 and the support part 22 are connected by a male thread 21s formed on the base 21 and a female thread 22as formed on the shaft part 22a of the support part 22. The threaded connection between the male thread 21s and the female thread 22as acts as a thermal resistor in the transfer of heat. Therefore, with the heat treatment device 2 according to this embodiment, the transfer of heat from the base 21 to the support part 22 can be suppressed.

A male thread 22at is formed on the outer surface 22a2 of the end of the shaft 22a facing the mounting portion 22b. The male thread 22at is formed, for example, by cutting. The male thread 22at fastens to the female thread 22bs of the mounting portion 22b.

In the heat treatment device 2 according to this embodiment, the shaft portion 22a and the mounting portion 22b are connected by a male thread 22at formed on the shaft portion 22a and a female thread 22bs formed on the mounting portion 22b. The threaded connection between the male thread 2at and the female thread 22bs acts as a thermal resistor in the transfer of heat. Therefore, the heat treatment device 2 according to this embodiment can suppress the transfer of heat inside the support portion 22.

The shaft portion 22a is made of a machinable ceramic and has a coating layer 22ar made of aluminum nitride (AlN) or the like on its surface. By providing a coating layer 22ar made of aluminum nitride (AlN) or the like, it is possible to improve resistance to halogens (halogen resistance).

(Mounting portion 22b)
The attachment portion 22b is a member that is pressed by the fixing portion 22c when attaching the heat treatment device 2 to the cooling portion 18. The attachment portion 22b is pressed by the fixing portion 22c, and the attachment portion 22b is sandwiched between the fixing portion 22c and the cooling portion 18, thereby attaching the heat treatment device 2 to the cooling portion 18.

The mounting portion 22b is formed, for example, by cutting a disk-shaped piece of machinable ceramic. The shaft portion 22a has an annular shape with a rectangular cross section and an inner surface 22b1.

A female thread 22bs is formed on the inner surface 22b1 of the end of the mounting portion 22b facing the shaft portion 22a. The female thread 22bs is formed, for example, by cutting. The female thread 22bs fastens to the male thread 22at of the shaft portion 22a.

The mounting portion 22b has a groove 22g on its underside. A sealing member 22p, such as an O-ring, is provided in the groove 22g. The sealing member 22p maintains airtightness between the processing vessel 1 and the outside.

The mounting portion 22b is made of a machinable ceramic and has a coating layer 22br made of aluminum nitride (AlN) or similar on the surface. By providing a coating layer 22br made of aluminum nitride (AlN) or similar, it is possible to improve resistance to halogens (halogen resistance).

[Shower head 3]
The shower head 3 supplies a processing gas into the processing chamber 1 in a shower-like manner. The shower head 3 is made of metal. The shower head 3 is provided to face the heat processing apparatus 2. The shower head 3 has approximately the same diameter as the heat processing apparatus 2.

The showerhead 3 comprises a main body 31 and a shower plate 32. The main body 31 is fixed to the ceiling wall 14 of the processing vessel 1. The shower plate 32 is connected below the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32. The ceiling wall 14 of the processing vessel 1 and the main body 31 each have a gas inlet hole 36 that penetrates through the center. The gas inlet hole 36 is connected to the gas diffusion space 33.

A downwardly protruding annular protrusion 34 is formed on the periphery of the shower plate 32. Gas ejection holes 35 are formed on the inner flat surface of the annular protrusion 34. When the heat treatment device 2 is in the processing position, a processing space 38 is formed between the heat treatment device 2 and the shower plate 32. In addition, the upper surface of the cover member 24 and the annular protrusion 34 are close to each other, forming an annular gap 39.

[Exhaust section 4]
The exhaust unit 4 exhausts the inside of the processing chamber 1. The exhaust unit 4 includes an exhaust pipe 41 and an exhaust mechanism 42. The exhaust pipe 41 is connected to the exhaust port 13b. The exhaust mechanism 42 is connected to the exhaust pipe 41. The exhaust mechanism 42 includes a vacuum pump, a pressure control valve, etc.

The exhaust unit 4 exhausts gas from the processing vessel 1, which reaches the exhaust duct 13 via the slit 13a, from the exhaust duct 13 through the exhaust piping 41 using the exhaust mechanism 42.

[Gas supply mechanism 5]
The gas supply mechanism 5 supplies a processing gas into the processing chamber 1. The gas supply mechanism 5 is connected to the gas inlet 36 via a gas supply line 51.

The substrate processing apparatus 100 is a capacitively coupled plasma apparatus, with the heat treatment apparatus 2 serving as the lower electrode and the showerhead 3 serving as the upper electrode. The heat treatment apparatus 2 serving as the lower electrode is grounded via a capacitor (not shown).

[High frequency power supply unit 6]
The high frequency power supply unit 6 supplies high frequency power to the shower head 3 serving as the upper electrode. High frequency power (hereinafter also referred to as "high frequency power") is applied to the shower head 3 serving as the upper electrode by the high frequency power supply unit 6. The high frequency power supply unit 6 includes a power feed line 61, a matching box 62, and a high frequency power supply 63.

The high-frequency power supply 63 is a power supply that generates high-frequency power. The high-frequency power has a frequency suitable for generating plasma. The frequency of the high-frequency power is, for example, within the range of 450 kHz to 100 MHz. The high-frequency power supply 63 is connected to the main body 31 of the showerhead 3 via a matching box 62 and a power supply line 61. The matching box 62 has a circuit for matching the output reactance of the high-frequency power supply 63 with the reactance of the load (upper electrode).

Note that while the high-frequency power supply unit 6 has been described as applying high-frequency power to the shower head 3, which serves as the upper electrode, this is not limited to this. It may also be configured to apply high-frequency power to the heat treatment device 2, which serves as the lower electrode. Furthermore, the substrate processing device does not necessarily have to be configured to apply high-frequency power.

[Control unit 7]
The control unit 7 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus. The control unit 7 may be provided inside or outside the substrate processing apparatus. When the control unit 7 is provided outside the substrate processing apparatus, the control unit 7 can control the substrate processing apparatus via a communication means such as a wired or wireless communication means.

<Actions and Effects>
According to the heat treatment apparatus 2 of the first embodiment, by connecting the base 21 and the support part 22 with screws, heat conduction from the base 21, which heats the substrate W placed thereon, to the support part 22 can be suppressed.

To heat the substrate W, a portion of the heat generated in the base 21 of the heat treatment device 2 passes through the support 22 and is transferred to the cooling unit 18. The base 21 of the heat treatment device 2 is connected to the support 22 by fastening a male screw 21s provided on the underside 21S2 to the female screw 22as of the support 22. Heat transfer at the connection between the male screw 21s and the female screw 22as is suppressed compared to, for example, when the base 21 and the support 22 are formed integrally, because the connection acts as a thermal resistor. In other words, the amount of heat transferred from the base 21 to the support 22 is suppressed at the connection between the male screw 21s and the female screw 22as.

Therefore, the heat treatment apparatus 2 according to the first embodiment can suppress heat conduction from the base 21, which heats the placed substrate W, to the support part 22. Furthermore, the heat treatment apparatus 2 according to the first embodiment can suppress heat conduction from the base 21 to the support part 22, thereby allowing the length of the support part 22 to be shortened. By shortening the length of the support part 22, the vertical length of the processing vessel 1 can be shortened. By shortening the vertical length of the processing vessel 1, the size of the substrate processing apparatus 100 can be reduced. In other words, by shortening the vertical length of the processing vessel 1, the volume of the processing vessel 1 provided in the substrate processing apparatus 100 can be reduced.

To explain the effect, a comparative example of heat treatment device 2z will be described. Figure 8 is a schematic cross-sectional view of the comparative example of heat treatment device 2z. Heat treatment device 2z includes a base 21z and a support portion 22z. Base 21z and support portion 22z are each formed from a ceramic such as aluminum nitride. Base 21z and support portion 22z are integrally formed by diffusion bonding or the like.

The heat treatment device 2z is fixed to the cooling unit 18 by the fixing portion 22c with screws 22nz. A sealing member 22pz is provided between the heat treatment device 2z and the cooling unit 18.

In the heat treatment device 2z, the base 21z and the support portion 22z are integrally formed by diffusion bonding or the like, allowing a large amount of heat to be transferred from the base 21z to the support portion 22z. For example, if the base 21z and the support portion 22z are made of aluminum nitride, aluminum nitride has high thermal conductivity, and therefore a large amount of heat flows to the cooling portion 18, as indicated by the arrowed line A.

On the other hand, the sealing member 22pz between the heat treatment device 2z and the cooling unit 18 is formed, for example, from a vacuum sealing material. To ensure that the sealing member 22pz meets the heat resistance temperature limit, the temperature at the joint between the support unit 22z and the cooling unit 18 must be kept below a predetermined temperature.

In the heat treatment device 2z, the vertical length Hz of the support part 22z is increased, thereby increasing the distance between the joint between the base 21z and the cooling part 18 of the support part 22z, thereby lowering the temperature of the joint between the base 21z and the cooling part 18 of the support part 22z. In other words, by increasing the distance between the joint between the base 21z and the cooling part 18 of the support part 22z, the base 21z and the cooling part 18 are separated, creating a temperature difference between the base 21z and the cooling part 18 of the support part 22z.

For example, if a material with low thermal conductivity is used for the support, dissimilar materials will be joined between the base and the support. When joining dissimilar materials, it is difficult to join them while preventing cracks from occurring due to the difference in thermal expansion coefficients.

The heat treatment device 2 according to the first embodiment reduces the amount of heat transferred from the base 21 to the support part 22 at the connection between the male thread 21s and the female thread 22as. By reducing the amount of heat transferred from the base 21 to the support part 22, the temperature of the part of the heat treatment device 2 that connects to the cooling part 18 can be reduced. By reducing the temperature of the part of the heat treatment device 2 that connects to the cooling part 18, the vertical length H of the support part 22 of the heat treatment device 2 can be reduced. In other words, the distance between the base 21 and the cooling part 18 of the heat treatment device 2 can be reduced. Therefore, the processing vessel 1 of the heat treatment device 2 can be made smaller, thereby reducing the size of the heat treatment device 2.

In the heat treatment device 2 according to the first embodiment, the support portion 22 is fastened by screws between the shaft portion 22a and the mounting portion 22b, which further reduces heat transfer between the shaft portion 22a and the mounting portion 22b. Therefore, the transfer of heat from the base 21 to the cooling portion 18 can be further reduced at the support portion 22. By reducing the transfer of heat from the base 21 to the cooling portion 18 at the support portion 22, the vertical length H of the support portion 22 of the heat treatment device 2 can be further reduced.

Furthermore, according to the heat treatment device 2 of the first embodiment, since the heat treatment device 2 is made of machinable ceramics, the heat treatment device 2 can be manufactured using general-purpose equipment through cutting processing.

For example, in the comparative example of heat treatment device 2z, the base 21z and the support portion 22z are integrally formed by diffusion bonding or the like, requiring specialized processing equipment. Diffusion bonding between ceramics is expensive and requires highly sophisticated techniques, which increases the cost of manufacturing the heat treatment device 2z.

The heat treatment device 2 according to the first embodiment can simplify the manufacturing process by eliminating the special manufacturing process used to manufacture the heat treatment device 2z of the comparative example. By manufacturing the heat treatment device 2 using a simplified manufacturing process, the costs required for manufacturing can be reduced.

Furthermore, with the heat treatment device 2 according to the first embodiment, the surface of the machinable ceramic can be provided with a coating layer such as aluminum nitride (AlN), thereby improving resistance to halogens used in substrate processing (halogen resistance).

In chemical vapor deposition (CVD) or atomic layer deposition (ALD), gases containing halogens are used as raw materials. Generally, machinable ceramics have low corrosion resistance to gases containing halogens.

The heat treatment device 2 according to the first embodiment can improve halogen resistance by providing a coating layer such as aluminum nitride (AlN) on the surface of the machinable ceramic. By providing a coating layer on the surface of the machinable ceramic, the amount of highly corrosion-resistant material such as aluminum nitride used can be reduced, resulting in cost savings.

The upper surface 21S1 of the base 21 is an example of the first surface, the lower surface 21S2 is an example of the second surface, the male thread 21s is an example of the first threaded portion, and the female thread 22as is an example of the second threaded portion.

<Modification>
In the heat treatment device 2 according to the first embodiment, the male thread 21s is formed on the first side surface 21g1 of the groove 21g of the base 21, but the female thread may be formed on the second side surface 21g2. When the female thread is formed on the second side surface 21g2, the male thread is formed on the outer surface 22a2 of the end of the shaft portion 22a on the base 21 side.

In addition, the heat treatment device 2 according to the first embodiment has a male thread 21s formed in the groove 21g of the base 21, but it is also possible to provide a protrusion protruding from the lower surface 21S2 and form a male thread on the side of the protrusion.

Second Embodiment
[Heat Treatment Device 102]
Next, a description will be given of a heat treatment apparatus 102 according to a second embodiment of the present invention. Fig. 7 is a schematic cross-sectional view of the heat treatment apparatus 102 according to the second embodiment of the present invention.

The heat treatment device 102 supports the substrate W horizontally within the processing chamber 1. The heat treatment device 102 also heats the substrate W. The heat treatment device 102 includes a base 121 and a support 122. The base 121 is formed in a circular plate shape with a size corresponding to the substrate W. The base 121 is supported by the support 122.

The heat treatment device 102 further includes a base portion 125 between the support portion 122 and the cooling portion 18.

The base 121 has a disk-like shape. The support portion 122 has a cylindrical portion 122a that has a cylindrical shape and an annular portion 122b that has a ring-like shape with a rectangular cross section. The cylindrical portion 122a and the annular portion 122b are formed integrally.

The base 121 has a heater 121h inside. In other words, the heater 121h is embedded inside the base 121. The heater 121h is driven using the same driving method as the heater 21h in the first embodiment, so a detailed explanation will be omitted.

(Base 121)
The base 121 supports the substrate W and heats the substrate W. The base 121 has an upper surface 121S1 and a lower surface 121S2 located opposite the upper surface 121S1. The substrate W is supported on the upper surface 121S1. A support 122 is connected to the lower surface 121S2.

The base 121 is made of a machinable ceramic. Like the base 21, the base 121 has a groove 121g on its lower surface 121S2 that is circular when viewed from below. The groove 121g is formed by cutting inward from the lower surface 121S2.

A male thread 121s is formed on the side surface of the groove 121g that is located toward the center of the base 121 when viewed from below. The male thread 121s is formed, for example, by cutting. The male thread 121s fastens to a female thread 122s formed on the support portion 122.

The base 121 is made of a machinable ceramic and has a coating layer 121r made of aluminum nitride (AlN) or similar on its surface. By providing a coating layer 121r made of aluminum nitride (AlN) or similar, the base 121 can improve its resistance to halogens (halogen resistance).

(Support part 122)
The support portion 122 supports the base 121. The support portion 122 is provided between the base 121 and the platform portion 125.

The support portion 122 is made of the same machinable ceramic as the base 121. The support portion 122 may also be made of the same ceramic material as the base 121.

The support portion 122 has a cylindrical portion 122a and an annular portion 122b. The cylindrical portion 122a and the annular portion 122b are integrally formed. The cylindrical portion 122a and the annular portion 122b may be integrally formed, for example, by molding using a mold, or may be integrally formed by cutting from a block of machinable ceramic. Alternatively, the cylindrical portion 122a and the annular portion 122b may be integrally formed by diffusion bonding or the like.

A female thread 122s is formed on the inner surface of the cylindrical portion 122a at the end facing the base 121. The female thread 122s is formed, for example, by cutting. The female thread 122s fastens to the male thread 121s of the base 121.

The annular body portion 122b has a threaded hole 122h that penetrates vertically and has a thread formed on the inside. The annular body portion 122b is fixed to the base portion 125 by fastening a screw 125n into the threaded hole 122h. By fixing the annular body portion 122b to the base portion 125, the support portion 122 is fixed to the base portion 125. Furthermore, a nut 125m may be provided on the screw 125n to prevent loosening of the screw 125n. However, the nut 125m may not be provided. Furthermore, the heat treatment device 102 has a metal seal 125e between the support portion 122 and the base portion 125 to prevent leakage.

The support portion 122 has a screw hole 122h, but a through hole may be formed instead of the screw hole 122h, and the annular portion 122b may be fixed to the base portion 125 with a nut 125m.

The support part 122 has a coating layer 122r made of aluminum nitride (AlN) or the like on the surface of the machinable ceramic. By providing a coating layer 122r made of aluminum nitride (AlN) or the like, it is possible to improve resistance to halogens (halogen resistance).

(Base part 125)
The base 125 fixes the support 122 to the cooling unit 18. The base 125 is provided between the support 122 and the cooling unit 18.

The base portion 125 is made of metal. The base portion 125 has an upper plate portion 125a that is annular in top view, a cylindrical portion 125b, and a lower plate portion 125c that is also annular in top view. The upper plate portion 125a, the cylindrical portion 125b, and the lower plate portion 125c are integrally formed. The base portion 125 is formed, for example, by machining such as bending.

The upper plate portion 125a supports the annular portion 122b of the support portion 122 via a metal seal 125e. The upper plate portion 125a is fastened to the support portion 122 with a screw 125n. The cylindrical portion 125b connects the upper plate portion 125a and the lower plate portion 125c. The cylindrical portion 125b separates the upper plate portion 125a from the lower plate portion 125c.

The lower plate 125c is placed on the cooling unit 18. The lower plate 125c has a groove 125g on the surface facing the cooling unit 18. A sealing member 125p such as an O-ring is provided in the groove 125g. The sealing member 125p maintains airtightness between the processing vessel 1 and the outside.

<Actions and Effects>
In addition to the effects and advantages of the heat treatment device 2 according to the first embodiment, the heat treatment device 102 according to the second embodiment can further shorten the length of the support portion 122. Furthermore, the heat treatment device 102 according to the second embodiment can further suppress heat transfer between the support portion 122 and the base portion 125 by using screws to fasten the support portion 122 and the base portion 125. Furthermore, the heat treatment device 102 according to the second embodiment uses a metal material for the base portion 125, thereby reducing manufacturing costs such as material costs.

For example, an insulating sleeve may be inserted into the screw 125n portion of the platform 125 to insulate it from the base 121.

The heat treatment device according to the present embodiment disclosed herein should be considered in all respects to be illustrative and not restrictive. The above-described embodiment can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

100 Substrate processing apparatus 1 Processing container 2, 102 Heating processing apparatus 21, 121 Base 21S1, 121S1 Upper surface 21S2, 121S2 Lower surface 21g, 121g Groove portion 21h, 121h Heater 21r, 121r Covering layer 21s, 121s Male screw 22, 122 Support portion 22as, 122s Female screw 22a Shaft portion 22a1 Inner surface 22a2 Outer surface 22ar, 22br Covering layer 122a Cylindrical portion 125 Base portion W Substrate

Claims (10)

a base having a first surface on which a substrate is placed and a second surface opposite to the first surface, the base having a heater therein;
a support portion connected to the second surface side,
the base has a first screw portion on the second surface side,
The support portion includes a shaft portion and an attachment portion,
The shaft portion is
a second threaded portion at a first end portion on the base side, the second threaded portion being fastened to the first threaded portion;
a third threaded portion at a second end opposite the base;
The mounting portion has a fourth threaded portion fastened to the third threaded portion.
Heat treatment equipment. The base and the support are each made of ceramics.
The heat treatment device according to claim 1 . The ceramic includes silicon nitride.
The heat treatment device according to claim 2 . Further provided is a base portion on which the support portion is placed.
The heat treatment device according to any one of claims 1 to 3. The base is formed of metal.
The heat treatment device according to claim 4 . Each of the base and the support has a coating layer on a surface thereof.
The heat treatment device according to any one of claims 1 to 5. The coating layer is formed of aluminum nitride.
The heat treatment device according to claim 6 . the base has an annular groove on the second surface side,
The first thread portion is formed in the groove portion.
The heat treatment device according to any one of claims 1 to 7. The support portion has a cylindrical shape,
The second threaded portion is formed on the inner surface of the cylindrical shape.
The heat treatment device according to any one of claims 1 to 8. the first threaded portion is a male thread,
The second threaded portion is a female thread.
The heat treatment device according to any one of claims 1 to 9.