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JP7801637B2 - Method for manufacturing a reduction electrode - Google Patents
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JP7801637B2 - Method for manufacturing a reduction electrode - Google Patents

Method for manufacturing a reduction electrode

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JP7801637B2
JP7801637B2 JP2024524079A JP2024524079A JP7801637B2 JP 7801637 B2 JP7801637 B2 JP 7801637B2 JP 2024524079 A JP2024524079 A JP 2024524079A JP 2024524079 A JP2024524079 A JP 2024524079A JP 7801637 B2 JP7801637 B2 JP 7801637B2
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reduction
electrode
carbon dioxide
reduction electrode
water
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晃洋 鴻野
裕也 渦巻
紗弓 里
武志 小松
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00Electrodes; Manufacture thereof not otherwise provided for
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00Electrolytic production of inorganic compounds or non-metals
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    • C25B1/23Carbon monoxide or syngas
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00Electrolytic production of inorganic compounds or non-metals
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/052Electrodes comprising one or more electrocatalytic coatings on a substrate
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B3/00Electrolytic production of organic compounds
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    • C25B3/00Electrolytic production of organic compounds
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    • C25B3/21Photoelectrolysis
    • CCHEMISTRY; METALLURGY
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    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B3/00Electrolytic production of organic compounds
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    • C25B3/25Reduction
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    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B3/00Electrolytic production of organic compounds
    • C25B3/20Processes
    • C25B3/25Reduction
    • C25B3/26Reduction of carbon dioxide

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Description

本発明は、還元電極、及び、還元電極の製造方法に関する。 The present invention relates to a reduction electrode and a method for manufacturing a reduction electrode.

地球温暖化の主因として大気中の二酸化炭素濃度の増加が挙げられている。二酸化炭素の排出量の削減は、世界的規模で長期的な課題になっている。一方、エネルギー問題として中長期的に、化石燃料に頼ったエネルギー供給の見直しが迫られ、次世代のエネルギー供給源の創出が求められている。 The increase in carbon dioxide concentrations in the atmosphere is cited as the main cause of global warming. Reducing carbon dioxide emissions has become a long-term challenge on a global scale. Meanwhile, in the medium to long term, energy issues necessitate a reassessment of energy supplies that rely on fossil fuels, and the creation of next-generation energy sources is required.

二酸化炭素の排出を抑制してエネルギーを得る手段としては、排熱、雪氷熱、振動、電磁波等の未使用エネルギーや太陽光等の再生可能エネルギーを活用する技術開発が進められている。これらの発電技術は、電気エネルギーを創出するに留まり、エネルギーを貯蓄できない。また、化石燃料を原料とした化学製品を創ることもできない。 To obtain energy while reducing carbon dioxide emissions, technological development is underway to utilize unused energy sources such as exhaust heat, snow and ice heat, vibrations, and electromagnetic waves, as well as renewable energy sources such as sunlight. However, these power generation technologies are limited to generating electrical energy and cannot store energy. Furthermore, they cannot be used to create chemical products from fossil fuels.

これらの課題を同時に解決する方法として、光エネルギーを用いて二酸化炭素を還元する技術が注目されている。例えば、非特許文献1は、光照射による二酸化炭素の還元装置を開示している。酸化槽では、酸化電極に光が照射されると、その酸化電極で電子・正孔対の生成及び分離が生じ、電解液内の水の酸化反応により酸素及びプロトン(H)が生成する。プロトンは電解質膜を通過して還元槽に到達し、電子は導線を介して還元電極に流れる。還元槽では、溶液内の還元電極で、プロトンと電子と溶液に溶解した二酸化炭素とによる二酸化炭素の還元反応が引き起こされる。この還元反応により、エネルギー資源として利用できる一酸化炭素、ギ酸、及びメタン等が生成される。 As a method for simultaneously solving these problems, technology that uses light energy to reduce carbon dioxide has attracted attention. For example, Non-Patent Document 1 discloses a carbon dioxide reduction device that uses light irradiation. In an oxidation tank, when light is irradiated onto an oxidation electrode, electron-hole pairs are generated and separated at the oxidation electrode, and oxygen and protons (H + ) are generated by an oxidation reaction of water in the electrolyte. The protons pass through the electrolyte membrane to reach the reduction tank, and the electrons flow to the reduction electrode via a conductor. In the reduction tank, a reduction reaction of carbon dioxide occurs at the reduction electrode in the solution, involving the protons, electrons, and carbon dioxide dissolved in the solution. This reduction reaction produces carbon monoxide, formic acid, methane, and other substances that can be used as energy resources.

非特許文献1の二酸化炭素還元装置では、還元電極を溶液に浸漬させ、二酸化炭素を当該溶液中に溶解することで、二酸化炭素を還元電極へ供給していた。しかしながら、この二酸化炭素の還元方法では、還元電極が溶液に浸漬しているため、溶液での二酸化炭素の溶解濃度や溶液中での二酸化炭素の拡散係数に限界があり、二酸化炭素の還元電極への供給量が制限される。In the carbon dioxide reduction device described in Non-Patent Document 1, the reduction electrode is immersed in a solution, and carbon dioxide is dissolved in the solution, thereby supplying carbon dioxide to the reduction electrode. However, because this carbon dioxide reduction method requires the reduction electrode to be immersed in the solution, there are limitations to the concentration of carbon dioxide dissolved in the solution and the diffusion coefficient of carbon dioxide in the solution, which limits the amount of carbon dioxide that can be supplied to the reduction electrode.

そこで、二酸化炭素の還元電極への供給量を増加させるため、還元槽内の溶液を排除し、二酸化炭素を還元電極へ直接供給する研究が進められている。非特許文献2では、還元電極に対して気相の二酸化炭素を直接供給する構造の還元槽を用いることで、二酸化炭素の還元電極への供給量を増大させ、二酸化炭素の還元反応を促進させている。Therefore, in order to increase the amount of carbon dioxide supplied to the reduction electrode, research is being conducted into removing the solution from the reduction tank and supplying carbon dioxide directly to the reduction electrode. In Non-Patent Document 2, a reduction tank designed to directly supply gaseous carbon dioxide to the reduction electrode is used, thereby increasing the amount of carbon dioxide supplied to the reduction electrode and promoting the carbon dioxide reduction reaction.

Satoshi Yotsuhashi、外6名、“CO2 Conversion with Light and Water by GaN Photo electroade”、Japanese Journal of Applied Physics、51、2012、p.02BP07-1-p.02BP07-3Satoshi Yotsuhashi, 6 others, “CO2 Conversion with Light and Water by GaN Photo electroade”, Japanese Journal of Applied Physics, 51, 2012, p.02BP07-1-p.02BP07-3 Qingxin Jia、外2名、“Direct Gas-phase CO2 reduction for Solar Methane Generation Using a Gas Diffusion Electrode with a BiVO4:Mo and a Cu-In-e Photoanode”、Chem .Lett.、47、2018年1月13日、p.436-p.439Qingxin Jia and 2 others, “Direct Gas-phase CO2 reduction for Solar Methane Generation Using a Gas Diffusion Electrode with a BiVO4:Mo and a Cu-In-e Photoanode”, Chem.Lett., 47, January 13, 2018, p.436-p.439

しかしながら、還元反応が進行すると、還元電極の反応表面において、二酸化炭素の還元生成物が生成し、気体である水素、一酸化炭素、メタンだけでなく、液体であるギ酸、メタノール、エタノール等も生成する。また、時間経過に伴い、酸化槽内の電解液が電解質膜を通過して還元槽に徐々に滲出する。そのため、これらの液体で還元電極の反応表面(反応サイト)が被覆されてしまい、二酸化炭素の還元反応が進行しなくなる。それゆえ、従来の二酸化炭素還元装置は、数十時間で二酸化炭素の還元反応効率が低下するという課題があった。However, as the reduction reaction progresses, carbon dioxide reduction products are produced on the reaction surface of the reduction electrode, producing not only gaseous hydrogen, carbon monoxide, and methane, but also liquids such as formic acid, methanol, and ethanol. Furthermore, over time, the electrolyte in the oxidation chamber gradually seeps into the reduction chamber through the electrolyte membrane. As a result, the reaction surface (reaction site) of the reduction electrode becomes covered with these liquids, preventing the carbon dioxide reduction reaction from proceeding. Therefore, conventional carbon dioxide reduction devices had the problem of a decline in the efficiency of the carbon dioxide reduction reaction within a few tens of hours.

本発明は、上記事情に鑑みてなされたものであり、本発明の目的は、二酸化炭素の還元反応効率を改善可能な技術を提供することである。 The present invention was made in consideration of the above circumstances, and its object is to provide technology that can improve the efficiency of carbon dioxide reduction reactions.

本発明の一態様の還元電極は、酸化槽と還元槽との間に設置された電解質膜の還元槽側に接触して配置され、二酸化炭素を直接接触させて二酸化炭素の還元反応を行う二酸化炭素還元装置に用いられる還元電極において、前記還元槽側に凹凸構造および空隙孔を備え、前記凹凸構造は表面に付着する液体を滑落させることのできる撥水剤を備える。 One embodiment of the reduction electrode of the present invention is a reduction electrode used in a carbon dioxide reduction device that is placed in contact with the reduction tank side of an electrolyte membrane installed between an oxidation tank and a reduction tank, and that performs a carbon dioxide reduction reaction by directly contacting carbon dioxide.The reduction electrode has an uneven structure and void holes on the reduction tank side, and the uneven structure is equipped with a water-repellent agent that can allow liquid adhering to the surface to slide off.

本発明の一態様の還元電極の製造方法は、上記還元電極を製造する還元電極の製造方法において、還元電極に凹凸構造および空隙孔を形成する工程と、撥水剤を含む溶媒に前記還元電極を浸漬する工程と、前記還元電極を乾燥し前記溶媒を除去する工程と、前記還元電極の空隙孔周囲の撥水層を除去する工程と、を行う。 A method for manufacturing a reduction electrode according to one embodiment of the present invention includes the steps of forming a textured structure and pores in the reduction electrode, immersing the reduction electrode in a solvent containing a water-repellent agent, drying the reduction electrode to remove the solvent, and removing the water-repellent layer around the pores in the reduction electrode.

本発明の一態様の還元電極の製造方法は、上記還元電極を製造する還元電極の製造方法において、還元電極に凹凸構造および空隙孔を形成する工程と、前記還元電極と撥水剤を容器に入れて加熱する工程と、前記還元電極の空隙孔周囲の撥水層を除去する工程と、を行う。 One embodiment of the present invention relates to a method for manufacturing a reduction electrode, which comprises the steps of forming a textured structure and pores in the reduction electrode, placing the reduction electrode and a water-repellent agent in a container and heating the container, and removing the water-repellent layer around the pores in the reduction electrode.

本発明の一態様の還元電極の製造方法は、上記還元電極を製造する還元電極の製造方法において、還元電極に凹凸構造および空隙孔を形成する工程と、撥水剤を含む溶媒に前記還元電極の凹凸構造を触れさせる工程と、前記還元電極を乾燥し前記溶媒を除去する工程と、を行う。 A method for manufacturing a reduction electrode according to one embodiment of the present invention includes the steps of forming a relief structure and voids in the reduction electrode, exposing the relief structure of the reduction electrode to a solvent containing a water repellent, and drying the reduction electrode to remove the solvent.

本発明によれば、二酸化炭素の還元反応効率を改善できる。 The present invention can improve the efficiency of the carbon dioxide reduction reaction.

図1は、第1実施形態に係る二酸化炭素還元装置の構成例を示す図である。FIG. 1 is a diagram showing an example of the configuration of a carbon dioxide reduction device according to the first embodiment. 図2は、還元電極、撥水膜、空隙孔の構成例を示す図(図1の底面図)である。FIG. 2 is a diagram (bottom view of FIG. 1) showing an example of the configuration of the reduction electrode, the water-repellent film, and the void holes. 図3は、還元電極、撥水膜、空隙孔の構成例を示す図(図1の右側面)である。FIG. 3 is a diagram (the right side of FIG. 1) showing an example of the configuration of the reduction electrode, the water-repellent film, and the void holes. 図4は、還元電極及び撥水膜の第1製造方法を示す図である。FIG. 4 is a diagram showing a first method for manufacturing a reduction electrode and a water-repellent film. 図5は、還元電極及び撥水膜の第2製造方法を示す図である。FIG. 5 is a diagram showing a second method for manufacturing a reduction electrode and a water-repellent film. 図6は、還元電極及び撥水膜の第3製造方法を示す図である。FIG. 6 is a diagram showing a third method for manufacturing a reduction electrode and a water-repellent film. 図7は、第1実施形態に係るギ酸のファラデー効率の測定結果を示す図である。FIG. 7 is a diagram showing the measurement results of the Faraday efficiency of formic acid according to the first embodiment. 図8は、第2実施形態に係る二酸化炭素還元装置の構成例を示す図である。FIG. 8 is a diagram showing an example of the configuration of a carbon dioxide reduction device according to the second embodiment. 図9は、第2実施形態に係るギ酸のファラデー効率の測定結果を示す図である。FIG. 9 is a diagram showing the measurement results of the Faraday efficiency of formic acid according to the second embodiment.

以下、図面を参照して、本発明の実施形態を説明する。図面の記載において同一部分には同一符号を付し説明を省略する。 An embodiment of the present invention will be described below with reference to the drawings. In the description of the drawings, identical parts are designated by the same reference numerals and their description will be omitted.

[第1実施形態]
図1は、第1実施形態に係る二酸化炭素還元装置100の構成例を示す図である。二酸化炭素還元装置100は、図1に示すように、酸化電極1と、酸化槽2と、電解液3と、還元電極4と、還元槽5と、電解質膜6と、導線7と、光源8と、撥水膜9と、を備える。
[First embodiment]
Fig. 1 is a diagram showing an example of the configuration of a carbon dioxide reduction device 100 according to the first embodiment. As shown in Fig. 1 , the carbon dioxide reduction device 100 includes an oxidation electrode 1, an oxidation tank 2, an electrolyte 3, a reduction electrode 4, a reduction tank 5, an electrolyte membrane 6, a conducting wire 7, a light source 8, and a water-repellent film 9.

酸化電極1は、酸化槽2内の電解液3に浸漬されている。酸化電極1は、所定の面積を持つ基板上に半導体を形成することで形成される。酸化電極1は、例えば、サファイア基板の表面上に、窒化物半導体、酸化チタン、アモルファスシリコン、ルテニウム錯体やレニウム錯体等の光活性やレドックス活性を示す化合物を成膜することにより、形成される。 The oxidation electrode 1 is immersed in the electrolyte 3 in the oxidation tank 2. The oxidation electrode 1 is formed by forming a semiconductor on a substrate of a predetermined area. For example, the oxidation electrode 1 is formed by forming a film of a photoactive or redox-active compound, such as a nitride semiconductor, titanium oxide, amorphous silicon, ruthenium complex, or rhenium complex, on the surface of a sapphire substrate.

酸化槽2は、酸化電極1が浸漬される電解液3を保持する。 The oxidation tank 2 holds the electrolyte 3 in which the oxidation electrode 1 is immersed.

電解液3は、酸化槽2内に入れられている。電解液3は、例えば、炭酸水素カリウム水溶液、炭酸水素ナトリウム水溶液、塩化カリウム水溶液、塩化ナトリウム水溶液、水酸化カリウム水溶液、水酸化ルビジウム水溶液、水酸化セシウム水溶液である。 The electrolyte 3 is placed in the oxidation tank 2. The electrolyte 3 is, for example, an aqueous solution of potassium bicarbonate, an aqueous solution of sodium bicarbonate, an aqueous solution of potassium chloride, an aqueous solution of sodium chloride, an aqueous solution of potassium hydroxide, an aqueous solution of rubidium hydroxide, or an aqueous solution of cesium hydroxide.

還元電極4は、還元槽5内に配置されている。還元電極4は、酸化電極1と同様に所定の面積を持つ基板上に形成される。還元電極4は、例えば、銅、白金、金、銀、インジウム、パラジウム、ガリウム、ニッケル、錫、カドミウム、それらの合金の多孔質体である。その他、還元電極4は、酸化銀、酸化銅、酸化銅(II)、酸化ニッケル、酸化インジム、酸化錫、酸化タングステン、酸化タングステン(VI)、酸化銅等の化合物、金属イオンとアニオン性配位子を有する多孔質金属錯体でもよい。The reduction electrode 4 is placed in the reduction tank 5. Like the oxidation electrode 1, the reduction electrode 4 is formed on a substrate with a predetermined area. The reduction electrode 4 is a porous body made of, for example, copper, platinum, gold, silver, indium, palladium, gallium, nickel, tin, cadmium, or an alloy thereof. The reduction electrode 4 may also be a compound such as silver oxide, copper oxide, copper(II) oxide, nickel oxide, indium oxide, tin oxide, tungsten oxide, tungsten(VI) oxide, or copper oxide, or a porous metal complex having a metal ion and anionic ligand.

還元槽5は、還元電極4を内部に配置し、配管を介して外部から供給される気相の二酸化炭素を保持する。 The reduction tank 5 has a reduction electrode 4 placed inside and holds gaseous carbon dioxide supplied from the outside via piping.

電解質膜6は、酸化槽2と還元槽5との間に配置されている。正確には、電解質膜6は、電解液3と還元電極4との間にそれぞれに接触して配置されている。電解質膜6は、例えば、炭素-フッ素から成る骨格を持つ電解質膜であるナフィオン(登録商標)、フォアブルー、アクイビオン、炭素水素系骨格を持つ電解質膜であるセレミオン、ネオセプタである。 The electrolyte membrane 6 is disposed between the oxidation cell 2 and the reduction cell 5. More precisely, the electrolyte membrane 6 is disposed between the electrolyte solution 3 and the reduction electrode 4, in contact with each of them. The electrolyte membrane 6 is, for example, an electrolyte membrane with a carbon-fluorine skeleton, such as Nafion (registered trademark), ForeBlue, or Aquivion, or an electrolyte membrane with a hydrocarbon skeleton, such as Selemion or Neocepta.

導線7は、酸化電極1と還元電極4とを物理的電気的に接続する。 The conducting wire 7 physically and electrically connects the oxidation electrode 1 and the reduction electrode 4.

光源8は、酸化槽2に近接配置されている。光源8は、例えば、太陽光、キセノンランプ、疑似太陽光源、ハロゲンランプ、水銀ランプ、これらを組み合わせた光源である。 The light source 8 is arranged close to the oxidation tank 2. The light source 8 is, for example, sunlight, a xenon lamp, a solar simulant, a halogen lamp, a mercury lamp, or a combination of these.

図1では、還元電極4及び電解質膜6を、それぞれ、紙面の横方向で大きく幅を持つように描画したが、紙面の横方向の幅を薄くし、紙面の奥行方向に平面を持たせた薄い板状の形状にしてもよい。還元電極4と電解質膜6とを互いの平面で貼り合わせることで、その接触面の反応場を最大化できる。 In Figure 1, the reduction electrode 4 and electrolyte membrane 6 are each drawn with a large width in the horizontal direction of the page, but they may also be shaped like thin plates with a smaller width in the horizontal direction and a flat surface in the depth direction of the page. By bonding the reduction electrode 4 and electrolyte membrane 6 together at their flat surfaces, the reaction field at their contact surfaces can be maximized.

上記の二酸化炭素還元装置100において、酸化槽2では、電解液3と電解液3に浸漬させた半導体の酸化電極1とを用いて光源8からの照射光(光エネルギー)により電解液3内の水の酸化反応が行われる。還元槽5では、酸化電極1に導線7を介して接続された還元電極4と還元電極4に直接接触させた二酸化炭素とを用いて二酸化炭素の還元反応が行われる。In the carbon dioxide reduction device 100, in the oxidation tank 2, an oxidation reaction of water in the electrolyte 3 is carried out by irradiation with light (light energy) from a light source 8 using an electrolyte 3 and a semiconductor oxidation electrode 1 immersed in the electrolyte 3. In the reduction tank 5, a carbon dioxide reduction reaction is carried out using a reduction electrode 4 connected to the oxidation electrode 1 via a lead 7 and carbon dioxide in direct contact with the reduction electrode 4.

具体的には、光源8が酸化槽2の底から光を照射すると、その照射光を受光した酸化槽2内の酸化電極1で電子・正孔対の生成及び分離が生じ、電解液3内の水の酸化反応により酸素及びプロトンが生成する。プロトンは、電解質膜6を通過して酸化槽2内の電解液3から還元槽5内の還元電極4に到達する。電子は、導線7を介して酸化槽2内の酸化電極1から還元槽5内の還元電極4に流れる。還元槽5では、還元電極4において、プロトンと電子と還元電極4に直接接触された気相の二酸化炭素とによる二酸化炭素の還元反応が引き起こされる。この酸化還元反応により、エネルギー資源として利用できる一酸化炭素、ギ酸、及びメタン等が生成される。Specifically, when light source 8 irradiates the oxidation chamber 2 from the bottom, electron-hole pairs are generated and separated at oxidation electrode 1 in oxidation chamber 2, which receives the irradiated light. Oxidation reaction of water in electrolyte 3 generates oxygen and protons. The protons pass through electrolyte membrane 6 and reach reduction electrode 4 in reduction chamber 5 from electrolyte 3 in oxidation chamber 2. Electrons flow via conductor 7 from oxidation electrode 1 in oxidation chamber 2 to reduction electrode 4 in reduction chamber 5. In reduction chamber 5, a carbon dioxide reduction reaction occurs at reduction electrode 4 between the protons, electrons, and gaseous carbon dioxide that is in direct contact with reduction electrode 4. This oxidation-reduction reaction generates carbon monoxide, formic acid, methane, and other energy resources.

このとき、酸化槽2内の電解液3として強アルカリ水溶液、例えば1.0mol/Lの水酸化ナトリウム水溶液を用いた場合、電解質膜6が膨潤し、電解液3が当該電解質膜6の細孔を通過して還元槽5内の還元電極4の表面に滲出する。このような電解液3の電解質膜6からの滲出を防ぐためには、電解液3に接触する酸化槽2側の電解質膜6の表面を撥水処理すればよいが、還元反応の原料であるプロトンを電解質膜6内の水を媒体として移動させる必要があるため、電解質膜6の酸化槽2側の表面を完全に撥水処理で覆ってしまうと、還元槽5側で還元反応が進行しない恐れがある。In this case, if a strong alkaline aqueous solution, such as a 1.0 mol/L sodium hydroxide aqueous solution, is used as the electrolyte solution 3 in the oxidation tank 2, the electrolyte membrane 6 swells, and the electrolyte solution 3 passes through the pores of the electrolyte membrane 6 and seeps onto the surface of the reduction electrode 4 in the reduction tank 5. To prevent this seepage of the electrolyte solution 3 from the electrolyte membrane 6, the surface of the electrolyte membrane 6 on the oxidation tank 2 side that comes into contact with the electrolyte solution 3 can be treated to be water-repellent. However, because protons, the raw material for the reduction reaction, need to be transported using the water in the electrolyte membrane 6 as a medium, completely covering the surface of the electrolyte membrane 6 on the oxidation tank 2 side with a water-repellent treatment could prevent the reduction reaction from proceeding on the reduction tank 5 side.

そこで、本実施形態では、図1~図3に示すように、電解質膜6の還元槽5側の表面に空隙孔10付きの還元電極4を配置し、その還元電極4の突起部に撥水膜9を配置する。具体的には、図2や図3に拡大したように、還元電極4は、還元槽5側に凹凸構造(例えば、平板の主面に複数の円錐体を備えた構造)を備えて、凸部に撥水膜9を備え、電解質膜6の還元槽5側の表面全部を覆わないように凹の底に空隙孔10を備えている。 In this embodiment, as shown in Figures 1 to 3, a reduction electrode 4 with void holes 10 is placed on the surface of the electrolyte membrane 6 facing the reduction tank 5, and a water-repellent film 9 is placed on the protrusions of the reduction electrode 4. Specifically, as shown enlarged in Figures 2 and 3, the reduction electrode 4 has an uneven structure (e.g., a structure with multiple cones on the main surface of a flat plate) on the reduction tank 5 side, with the water-repellent film 9 on the protrusions, and void holes 10 at the bottom of the depressions so as not to cover the entire surface of the electrolyte membrane 6 facing the reduction tank 5.

数マイクロメートルの凹凸構造を表面に形成すると、その表面に付着した水滴は濡れることなく水滴となり、滑落する。この現象は一般的に、ロータス効果と呼ばれる。このロータス効果を発現するように還元電極4に凹凸構造を作製するだけでは、電解質膜6表面のプロトンと還元槽5内の二酸化炭素と還元電極4内の電子が反応しない。 When an uneven structure of several micrometers is formed on a surface, water droplets that adhere to the surface will simply form droplets and slide off without getting wet. This phenomenon is commonly known as the lotus effect. Simply creating an uneven structure on the reduction electrode 4 to produce this lotus effect will not result in a reaction between the protons on the surface of the electrolyte membrane 6, the carbon dioxide in the reduction tank 5, and the electrons in the reduction electrode 4.

そのために、本実施例では空隙孔10を設け、凹凸構造を有し、水を滑落させる機能を持つ部分と、空隙孔10と電解質膜6が接触している部分で、電解質膜6表面のプロトンと還元槽5内の二酸化炭素と還元電極4内の電子が反応する部分を分離する構造を作製した。 To this end, in this embodiment, a structure was created in which void holes 10 were provided, which have an uneven structure and function to allow water to slide off, and the area where the void holes 10 contact the electrolyte membrane 6, separating the area where protons on the surface of the electrolyte membrane 6 react with carbon dioxide in the reduction tank 5 and electrons in the reduction electrode 4.

さらに、空隙孔10の細孔径によっては、毛細管現象が発現し水は還元電極4の凹凸構造内にとどまろうとするため、撥水効果が弱まる恐れがある。そこで、凸部に撥水膜9を形成することで、電解質膜6から還元槽5へ水の移動を促すような構造を設けた。 Furthermore, depending on the pore diameter of the void holes 10, capillary action may occur, causing water to remain within the uneven structure of the reduction electrode 4, which may weaken the water-repellent effect. Therefore, a water-repellent film 9 is formed on the convex portions, creating a structure that promotes the movement of water from the electrolyte membrane 6 to the reduction tank 5.

なお、撥水膜9を還元電極4の表面すべてを覆ってしまうと、電解質膜6界面において、還元槽5内の二酸化炭素と還元電極4内の電子が直接反応できないため、還元電極4と電解質膜6が接する部分は撥水膜9を設けないことが必要である。 If the water-repellent film 9 were to cover the entire surface of the reduction electrode 4, the carbon dioxide in the reduction tank 5 and the electrons in the reduction electrode 4 would not be able to react directly at the interface with the electrolyte membrane 6, so it is necessary not to provide the water-repellent film 9 at the area where the reduction electrode 4 and the electrolyte membrane 6 come into contact.

次に、還元電極4及び撥水膜9の製造方法を説明する。 Next, we will explain the manufacturing method of the reduction electrode 4 and the water-repellent film 9.

空隙孔10を有する還元電極4の作製法は、市中技術である鋳造法、粉末冶金法、金属3Dプリンターによる造形、高出力レーザーを用いた加工法などが挙げられる。撥水膜9を製造するための撥水処理には、例えば、液相法や気相法が挙げられる。 Methods for producing the reduction electrode 4 with voids 10 include commercially available casting methods, powder metallurgy methods, metal 3D printer modeling, and processing methods using high-power lasers. Examples of water-repellent treatments for producing the water-repellent film 9 include liquid-phase methods and gas-phase methods.

液相法は、対象物を撥水剤であるフッ素系の高分子を溶解させたフッ素系の溶媒中にディップコート法などを用いて浸漬した後、対象物を加熱するなどして溶媒を除去することでフッ素系高分子を析出する手法である。気相法は、対象物と撥水剤であるフッ素系の低分子(シランカップリング剤)を同一密閉空間に入れ、フッ素系の低分子を加熱して蒸気にしたあと、対象物表面に蒸着させる手法である。この2つの手法においては、還元電極4表面をすべて撥水剤で覆ってしまい、電解質膜6界面において、還元槽5内の二酸化炭素と還元電極4内の電子が直接反応できない。そのため、高出力レーザーなどで空隙孔10と電解質膜6の接触面の撥水膜9を取り除かなければいけない。The liquid-phase method involves immersing the object in a fluorine-based solvent containing a fluorine-based polymer (water-repellent agent) using a dip coating method or other method, and then removing the solvent by heating the object to precipitate the fluorine-based polymer. The gas-phase method involves placing the object and a fluorine-based small molecule water-repellent agent (silane coupling agent) in the same sealed space, heating the fluorine-based small molecule to vaporize it, and then depositing it on the object's surface. In these two methods, the entire surface of the reduction electrode 4 is covered with water-repellent agent, preventing direct reaction between the carbon dioxide in the reduction tank 5 and the electrons in the reduction electrode 4 at the electrolyte membrane 6 interface. Therefore, the water-repellent film 9 at the contact surface between the pores 10 and the electrolyte membrane 6 must be removed using a high-power laser or other method.

また、上記高出力レーザーを用いないより簡便な他の方法としては、フッ素系の溶媒中にフッ素系の高分子もしくはフッ素系の低分子を溶解させ、溶媒に還元電極4の凹凸面を接触させた後、表面を乾燥させ、溶媒を除去することで撥水膜9を凹凸面に析出させる方法がある。フッ素系の溶媒は水と比較して表面張力が低いため、還元電極4の凹凸面をフッ素系の溶媒に接触させても、毛細管現象によって空隙孔10に浸透していかない。そのため、フッ素系の溶媒の低表面張力の特性によってより簡便に凹凸面のみに撥水膜9を形成することができる。 Another, simpler method that does not use the high-power laser described above involves dissolving a fluorine-based polymer or a fluorine-based small molecule in a fluorine-based solvent, bringing the uneven surface of the reduction electrode 4 into contact with the solvent, drying the surface, and removing the solvent to deposit a water-repellent film 9 on the uneven surface. Because fluorine-based solvents have a lower surface tension than water, even when the uneven surface of the reduction electrode 4 is brought into contact with the fluorine-based solvent, it does not penetrate into the pores 10 due to capillary action. Therefore, the low surface tension of fluorine-based solvents makes it easier to form a water-repellent film 9 only on the uneven surface.

図4は、還元電極4及び撥水膜9の第1製造方法を示す図である。第1製造方法は、液相法の第1手法による還元電極4及び撥水膜9の製造方法である。 Figure 4 shows a first manufacturing method for the reduction electrode 4 and the water-repellent film 9. The first manufacturing method is a manufacturing method for the reduction electrode 4 and the water-repellent film 9 using the first liquid-phase method.

還元電極4には、凹凸構造と空隙孔を有する構造を金属3Dプリンターにて形成した。凹凸構造は円柱状の直径10μm、高さ20μmであり、空隙孔は直径10μmのものを作製して用いた。凹凸構造と空隙孔の間隔は等間隔で、ピッチは15μmとした。最密重点構造とし、凹凸構造と空隙孔の比は1:3とした(第1工程S101)。撥水剤にはオプツールDSXを用いた。還元電極をオプツールDSX溶液に1分間浸漬した後(第2工程S102)、引き上げて乾燥するディップコートを行った(第3工程S103)。この工程により、還元電極の表面全面に撥水膜を形成できる。その後、空隙孔の外周を高出力レーザーを用いてなぞり、撥水膜9を熱分解することで除去した(第4工程S104)。The reduction electrode 4 was fabricated using a metal 3D printer to have a textured structure and voids. The textured structure was cylindrical, 10 μm in diameter and 20 μm in height, and the voids were fabricated with a diameter of 10 μm. The textured structure and voids were evenly spaced with a pitch of 15 μm. A close-packed structure was used, with a textured structure to void ratio of 1:3 (Step 1 S101). Optool DSX was used as the water-repellent agent. The reduction electrode was immersed in Optool DSX solution for 1 minute (Step 2 S102), then dip-coated and dried (Step 3 S103). This process formed a water-repellent film over the entire surface of the reduction electrode. The voids were then traced using a high-power laser, and the water-repellent film 9 was removed by thermal decomposition (Step 4 S104).

これらの工程により、還元電極4と電解質膜6の接触面だけは撥水膜9がないため、この接触面にて還元槽5の二酸化炭素と還元電極4の電子と電解質膜6のプロトンの反応を進行することができる。 As a result of these processes, the contact surface between the reduction electrode 4 and the electrolyte membrane 6 is free of the water-repellent film 9, allowing the reaction between the carbon dioxide in the reduction tank 5, the electrons in the reduction electrode 4, and the protons in the electrolyte membrane 6 to proceed at this contact surface.

図5は、還元電極4及び撥水膜9の第2製造方法を示す図である。第2製造方法は、気相法の第1手法による還元電極4及び撥水膜9の製造方法である。 Figure 5 shows a second manufacturing method for the reduction electrode 4 and the water-repellent film 9. The second manufacturing method is a manufacturing method for the reduction electrode 4 and the water-repellent film 9 using the first gas-phase method.

還元電極4には、凹凸構造と空隙孔を有する構造を金属3Dプリンターにて形成した。凹凸構造は円柱状の直径10μm、高さ20μmであり、空隙孔は直径10μmのものを作製して用いた。凹凸構造と空隙孔の間隔は等間隔で、ピッチは15μmとした。最密重点構造とし、凹凸構造と空隙孔の比は1:3とした(第1工程S201)。撥水剤にはフッ素系シランカップリング剤(例えば、ヘプタデカフルオロ‐1,1,2,2‐テトラヒドロデシルトリメトキシシラン)を用いた。テフロン容器に還元電極と撥水剤を入れて密封し、オーブンに入れて150℃で加熱した(第2工程S202)。この工程により、撥水剤が蒸発し、還元電極の全面に撥水膜を形成できる。その後、空隙孔の外周を高出力レーザーを用いてなぞり、撥水膜9を熱分解することで除去した(第3工程S203)。The reduction electrode 4 was fabricated using a metal 3D printer to have a textured structure and voids. The textured structure was cylindrical, 10 μm in diameter and 20 μm in height, with voids 10 μm in diameter. The textured structure and voids were evenly spaced with a pitch of 15 μm. A close-packed structure was used, with a textured structure to void ratio of 1:3 (Step 1 S201). A fluorine-based silane coupling agent (e.g., heptadecafluoro-1,1,2,2-tetrahydrodecyltrimethoxysilane) was used as the water-repellent agent. The reduction electrode and water-repellent agent were placed in a Teflon container, sealed, and heated in an oven at 150°C (Step 2 S202). This process evaporates the water-repellent agent, forming a water-repellent film over the entire surface of the reduction electrode. Thereafter, the outer periphery of the void hole was traced using a high-power laser, and the water-repellent film 9 was removed by thermal decomposition (third step S203).

これらの工程により、還元電極4と電解質膜6の接触面だけは撥水膜9がないため、この接触面にて還元槽5の二酸化炭素と還元電極4の電子と電解質膜6のプロトンの反応を進行することができる。この気相法では、ナフィオン表面に単分子膜を形成するため、ナノメートルオーダの極薄の撥水膜9を形成することができる。 Through these processes, the contact surface between the reduction electrode 4 and the electrolyte membrane 6 is free of the water-repellent film 9, allowing the reaction between the carbon dioxide in the reduction tank 5, the electrons in the reduction electrode 4, and the protons in the electrolyte membrane 6 to proceed at this contact surface. This gas-phase method forms a monolayer on the Nafion surface, allowing the formation of an extremely thin water-repellent film 9 on the order of nanometers.

図6は、還元電極4及び撥水膜9の第3製造方法を示す図である。第3製造方法は、液相法の第2手法による還元電極4及び撥水膜9の製造方法である。 Figure 6 shows a third manufacturing method for the reduction electrode 4 and the water-repellent film 9. The third manufacturing method is a manufacturing method for the reduction electrode 4 and the water-repellent film 9 using the second liquid-phase method.

還元電極4には、凹凸構造と空隙孔を有する構造を金属3Dプリンターにて形成した。凹凸構造は円柱状の直径10μm、高さ20μmであり、空隙孔は直径10μmのものを作製して用いた。凹凸構造と空隙孔の間隔は等間隔で、ピッチは15μmとした。最密重点構造とし、凹凸構造と空隙孔の比は1:3とした(第1工程S301)。撥水剤にはオプツールDSXを用いた。還元電極の凹凸構造の表面のみをオプツールDSX溶液に触れさせた後(第2工程S302)、引き上げて乾燥した(第3工程S303)。S303の第3工程では、空隙孔をフッ素系溶媒で埋まる毛細管現象は見られなかった。 A metal 3D printer was used to create a structure with a concave-convex structure and voids for the reduction electrode 4. The concave-convex structure was cylindrical, 10 μm in diameter and 20 μm in height, and the voids were 10 μm in diameter. The concave-convex structure and the voids were evenly spaced, with a pitch of 15 μm. A close-packed structure was used, with a ratio of concave-convex structure to voids of 1:3 (first step S301). Optool DSX was used as the water repellent. Only the surface of the concave-convex structure of the reduction electrode was exposed to Optool DSX solution (second step S302), then lifted and dried (third step S303). In the third step S303, no capillary action was observed, filling the voids with a fluorinated solvent.

これらの工程により、還元電極4と電解質膜6の接触面だけは撥水膜9がないため、この接触面にて還元槽5の二酸化炭素と還元電極4の電子と電解質膜6のプロトンの反応を進行することができる。 As a result of these processes, the contact surface between the reduction electrode 4 and the electrolyte membrane 6 is free of the water-repellent film 9, allowing the reaction between the carbon dioxide in the reduction tank 5, the electrons in the reduction electrode 4, and the protons in the electrolyte membrane 6 to proceed at this contact surface.

次に、上記の二酸化炭素還元装置100による電気化学測定及びその測定結果を説明する。 Next, we will explain the electrochemical measurements and measurement results using the above-mentioned carbon dioxide reduction device 100.

まず、サファイア基板上にn型半導体である窒化ガリウム(GaN)の薄膜と窒化アルミニウムガリウム(AlGaN)とをその順にエピタキシャル成長させ、その上にニッケル(Ni)を真空蒸着して熱処理を行うことで、酸化ニッケル(NiO)の助触媒薄膜を形成した。そして、その助触媒薄膜を酸化電極1とし、その酸化電極1を酸化槽2内の1.0mol/Lの水酸化カリウム水溶液の電解液3に浸漬させた。First, a thin film of n-type semiconductor gallium nitride (GaN) and aluminum gallium nitride (AlGaN) were epitaxially grown in that order on a sapphire substrate, and then nickel (Ni) was vacuum-deposited on top of that and heat-treated to form a nickel oxide (NiO) promoter thin film. This promoter thin film was then used as the oxidation electrode 1, and the oxidation electrode 1 was immersed in an electrolyte 3 of a 1.0 mol/L potassium hydroxide aqueous solution in an oxidation tank 2.

上記製造方法にて製造した還元電極4は、熱圧着を施すことで電解質膜6と密着させた。本実施例では熱圧着法を用いたが、還元電極4と電解質膜6が物理的に密着していれば、その他の方法を用いてもよい。その還元電極4を導線7で酸化電極1に接続し、その還元電極4を還元槽5内に設置した。The reduction electrode 4 manufactured using the above manufacturing method was bonded to the electrolyte membrane 6 by thermocompression bonding. In this example, thermocompression bonding was used, but other methods may be used as long as the reduction electrode 4 and electrolyte membrane 6 are physically bonded. The reduction electrode 4 was connected to the oxidation electrode 1 with a wire 7, and the reduction electrode 4 was placed in the reduction tank 5.

また、酸化槽2と還元槽5と物理的に分離する電解質膜6には、ナフィオンを用いた。その電解質膜6の両面のうち、撥水膜9が形成されている片面を還元槽5内に向け、空隙孔を有する片面を電解質膜6に接触するように配置した。 Nafion was used for the electrolyte membrane 6, which physically separates the oxidation tank 2 and the reduction tank 5. Of the two sides of the electrolyte membrane 6, the one side on which the water-repellent film 9 was formed was positioned facing the inside of the reduction tank 5, and the other side with pores was positioned so that it was in contact with the electrolyte membrane 6.

また、光源8には、300Wのキセノンランプを用いた。450nm以上の波長をフィルターでカットし、照度を6.6mW/cmとした。酸化電極1の照射面を2.5cmとした。 A 300 W xenon lamp was used as the light source 8. Wavelengths of 450 nm or more were cut off with a filter, and the illuminance was set to 6.6 mW/cm 2. The irradiated surface of the oxidation electrode 1 was set to 2.5 cm 2 .

そして、酸化槽2と還元槽5とに窒素と二酸化炭素とをそれぞれ流量5ml/min、かつ、圧力0.5MPaで供給した。酸化槽2への窒素のバブリングは、反応生成物を分析する目的で行った。酸化槽2と還元槽5との各内部をそれぞれ窒素と二酸化炭素とで十分に置換し、光源8から光を照射した。その後、還元電極4である銅多孔体の表面で二酸化炭素の還元反応が進行した。Nitrogen and carbon dioxide were then supplied to the oxidation tank 2 and reduction tank 5 at a flow rate of 5 ml/min and a pressure of 0.5 MPa, respectively. Nitrogen was bubbled into the oxidation tank 2 for the purpose of analyzing the reaction products. The interiors of the oxidation tank 2 and reduction tank 5 were thoroughly replaced with nitrogen and carbon dioxide, respectively, and light was then irradiated from the light source 8. The carbon dioxide reduction reaction then proceeded on the surface of the porous copper body, which served as the reduction electrode 4.

このとき、照射光により酸化電極1と還元電極4との間に流れる電流を電気化学測定装置(Solartron社製、1287型ポテンショガルバノスタット)で測定した。また、酸化槽2と還元槽5とで生じるガスと液体を採取し、ガスクロマトグラフ、液体クロマトグラフ、ガスクロマトグラフ質量分析計を用いて反応生成物を分析した。 The current flowing between the oxidation electrode 1 and the reduction electrode 4 due to the irradiated light was measured using an electrochemical measurement device (Solartron, Model 1287 potentiogalvanostat). In addition, the gas and liquid produced in the oxidation tank 2 and the reduction tank 5 were sampled, and the reaction products were analyzed using a gas chromatograph, a liquid chromatograph, and a gas chromatograph mass spectrometer.

特に、本実施形態では、二酸化炭素還元反応のファラデー効率を求めることで、還元電極4の表面に形成した撥水膜9の効果を検討した。なお、二酸化炭素還元反応のファラデー効率の計算方法は、後述する。In particular, in this embodiment, the effect of the water-repellent film 9 formed on the surface of the reduction electrode 4 was examined by calculating the Faraday efficiency of the carbon dioxide reduction reaction. The method for calculating the Faraday efficiency of the carbon dioxide reduction reaction will be described later.

実施例1では、第1製造方法で製造した還元電極4と撥水膜9を用いた。 In Example 1, a reduction electrode 4 and a water-repellent film 9 manufactured using the first manufacturing method were used.

実施例2では、第2製造方法で製造した還元電極4と撥水膜9を用いた。 In Example 2, a reduction electrode 4 and a water-repellent film 9 manufactured using the second manufacturing method were used.

実施例3では、第3製造方法で製造した還元電極4と撥水膜9を用いた。 In Example 3, a reduction electrode 4 and a water-repellent film 9 manufactured using the third manufacturing method were used.

比較例1では、第1製造方法で説明した製造法において、円柱状の凹凸構造の高さが0μmであるもの、すなわち凹凸構造を有さない還元電極4を用いた。 In Comparative Example 1, a reduction electrode 4 was used in which the height of the cylindrical uneven structure was 0 μm, i.e., no uneven structure, using the manufacturing method described in the first manufacturing method.

比較例2では、第1製造方法で説明した製造法において、撥水膜9を形成しない還元電極4を用いた。 In Comparative Example 2, a reduction electrode 4 without a water-repellent film 9 was used in the manufacturing method described in the first manufacturing method.

図7は、第1実施形態に係るギ酸のファラデー効率の測定結果を示す図である。凹凸構造を有さない比較例1では、ファラデー効率が50時間以降減少した。撥水膜9を形成していない比較例2では、ファラデー効率が50時間以降減少した。一方、凹凸構造と撥水膜9を形成した実施例1~実施例3では、50時間以降でもファラデー効率は減少しなかった。これは、還元電極4表面に液体の滑落を促す凹凸構造と撥水膜9を導入した結果、液漏れした結果の還元電極4表面の液体が滑落しやすくなり、還元電極4の反応サイトが電解液3で埋まらなくなったためである。 Figure 7 shows the measurement results of the Faraday efficiency of formic acid in the first embodiment. In Comparative Example 1, which did not have a concave-convex structure, the Faraday efficiency decreased after 50 hours. In Comparative Example 2, which did not have a water-repellent film 9, the Faraday efficiency decreased after 50 hours. On the other hand, in Examples 1 to 3, which had a concave-convex structure and a water-repellent film 9, the Faraday efficiency did not decrease even after 50 hours. This is because the introduction of the concave-convex structure and water-repellent film 9, which promote the liquid to slide off the surface of the reduction electrode 4, made it easier for the liquid to slide off the surface of the reduction electrode 4 due to liquid leakage, and the reaction sites of the reduction electrode 4 were no longer filled with the electrolyte 3.

ここで、二酸化炭素還元反応のファラデー効率の計算方法を説明する。二酸化炭素のファラデー効率は、光照射や電流電圧印加によって酸化電極1と還元電極4との間を移動した電子数に対して、二酸化炭素還元反応に使われた電子数の割合を示すものであり、式(1)で計算できる。Here, we will explain how to calculate the Faraday efficiency of the carbon dioxide reduction reaction. The Faraday efficiency of carbon dioxide indicates the ratio of the number of electrons used in the carbon dioxide reduction reaction to the number of electrons transferred between the oxidation electrode 1 and the reduction electrode 4 due to light irradiation or application of current and voltage, and can be calculated using equation (1).

ファラデー効率={還元反応の電子数}/{電極間を移動した電子数}・・・(1)
式(1)の「還元反応の電子数」は、二酸化炭素の還元生成物の積算生成量の測定値を、その生成反応に必要な電子数に換算することで求める。例えば、還元生成物が気体の場合の「還元反応の電子数」は、式(2)で計算できる。
Faraday efficiency = {number of electrons in the reduction reaction} / {number of electrons transferred between electrodes} (1)
The "number of electrons in the reduction reaction" in formula (1) is calculated by converting the measured cumulative amount of carbon dioxide reduction product produced into the number of electrons required for the production reaction. For example, when the reduction product is a gas, the "number of electrons in the reduction reaction" can be calculated using formula (2).

各還元反応の電子数(C)={(A×B×Z×F×T×10-6)}/V・・・(2)
Aは、還元反応生成物の濃度(ppm)である。Bは、キャリアガスの流量(L/sec)である。Zは、還元反応に必要な電子数である。Fは、ファラデー定数(C/mol)である。Tは、光照射時間又は電流電圧印加時間を(sec)である。Vは、気体のモル体積(L/mol)である。
Number of electrons in each reduction reaction (C)={(A×B×Z×F×T×10 −6 )}/V g (2)
A is the concentration (ppm) of the reduction reaction product. B is the flow rate (L/sec) of the carrier gas. Z is the number of electrons required for the reduction reaction. F is the Faraday constant (C/mol). T is the light irradiation time or current/voltage application time (sec). V g is the molar volume of the gas (L/mol).

還元生成物が液体の場合の「還元反応の電子数」は、式(3)で計算できる。 When the reduction product is liquid, the "number of electrons in the reduction reaction" can be calculated using equation (3).

各還元反応の電子数(C)=C×V×Z×F・・・(3)
Cは、還元反応生成物の濃度(mol/L)である。Vは、液体サンプルの体積(L)である。Zは、還元反応に必要な電子数である。Fは、ファラデー定数(C/mol)である。
Number of electrons in each reduction reaction (C) = C × V l × Z × F (3)
C is the concentration of the reduction reaction product (mol/L); V 1 is the volume of the liquid sample (L); Z is the number of electrons required for the reduction reaction; F is the Faraday constant (C/mol).

以上、第1実施形態を説明した。第1実施形態に係る二酸化炭素還元装置100によれば、ファラデー効率を落とすことなく、二酸化炭素還元反応を進行させられる二酸化炭素還元装置100を提供できる。The first embodiment has been described above. The carbon dioxide reduction device 100 according to the first embodiment can provide a carbon dioxide reduction device 100 that can proceed with the carbon dioxide reduction reaction without reducing the Faraday efficiency.

すなわち、第1実施形態では、電解液3と電解液3に浸漬させる半導体の酸化電極1とを用いて光源8からの照射光により水の酸化反応を行う酸化槽2と、酸化電極1に導線7を介して接続される還元電極4と還元電極4に直接接触させる二酸化炭素とを用いて二酸化炭素の還元反応を行う還元槽5と、酸化槽2内の電解液3と還元槽5内の還元電極4との間にそれぞれに接触して配置される電解質膜6と、を備えた二酸化炭素還元装置100において、還元槽5側の電解質膜6に接触して配置され、還元槽5側に凹凸構造および空隙孔10を備え、凹凸構造は表面に付着する液体を滑落させることのできる撥水膜9を備える。 That is, in the first embodiment, the carbon dioxide reduction device 100 includes an oxidation tank 2 that performs a water oxidation reaction by irradiating light from a light source 8 using an electrolyte 3 and a semiconductor oxidation electrode 1 immersed in the electrolyte 3, a reduction tank 5 that performs a carbon dioxide reduction reaction using a reduction electrode 4 connected to the oxidation electrode 1 via a lead 7 and carbon dioxide that is in direct contact with the reduction electrode 4, and an electrolyte membrane 6 that is arranged in contact with the electrolyte 3 in the oxidation tank 2 and the reduction electrode 4 in the reduction tank 5, respectively. The carbon dioxide reduction device 100 includes a water-repellent film 9 that is arranged in contact with the electrolyte membrane 6 on the reduction tank 5 side and has an uneven structure and void holes 10 on the reduction tank 5 side, and the uneven structure is capable of sliding off liquid adhering to the surface.

そのため、還元電極4の凹凸構造表面に備わる撥水膜9により、酸化槽2内の電解液3が電解質膜6の外部に滲出した結果である還元電極4表面の液体が凹凸構造表面へ移動しやすくなり、凹凸構造表面の水滴はロータス効果により滑落することで、還元電極4の反応サイトが電解液3で埋まらなくなる。その結果、二酸化炭素の還元反応を進行でき、その還元反応効率の低下を抑制できる。 Therefore, the water-repellent film 9 on the uneven surface of the reduction electrode 4 makes it easier for the liquid on the surface of the reduction electrode 4, which is the result of the electrolyte solution 3 in the oxidation tank 2 seeping out of the electrolyte membrane 6, to move to the uneven surface. Water droplets on the uneven surface slide off due to the lotus effect, preventing the reaction sites of the reduction electrode 4 from becoming filled with electrolyte solution 3. As a result, the carbon dioxide reduction reaction can proceed, and a decrease in the reduction reaction efficiency can be suppressed.

なお、上記の実験では、酸化電極1に対する光の照射量を定量的に管理するために光をキセノンランプで生じさせたが、太陽光等を用いて酸化反応を起こすことも可能である。 In the above experiment, light was generated using a xenon lamp in order to quantitatively control the amount of light irradiated onto the oxidation electrode 1, but it is also possible to induce the oxidation reaction using sunlight, etc.

[第2実施形態]
第1実施形態では、光源8と半導体で構成される酸化電極1とを用いる場合を説明した。第2実施形態では、それらに代えて、外部電源及び金属で構成される酸化電極1を用いて酸化・還元反応を進行させる。比較のため、第1実施形態と同じ電圧値・電流値を調整して印加した。
Second Embodiment
In the first embodiment, a case where a light source 8 and an oxidation electrode 1 made of a semiconductor are used has been described. In the second embodiment, instead of these, an external power source and an oxidation electrode 1 made of a metal are used to cause the oxidation-reduction reaction to proceed. For comparison, the same voltage and current values as in the first embodiment were adjusted and applied.

図8は、第2実施形態に係る二酸化炭素還元装置100の構成例を示す図である。酸化電極1は、白金である。その他、酸化電極1は、例えば、金、銀でもよい。外部の電源11は、電気化学測定装置であり、酸化電極1と還元電極4とを接続している導線7に直列接続される。電源11は、その他の電源装置でもよい。その他の構成要素は、第1実施形態と同一である。 Figure 8 is a diagram showing an example configuration of a carbon dioxide reduction device 100 according to the second embodiment. The oxidation electrode 1 is platinum. Alternatively, the oxidation electrode 1 may be made of, for example, gold or silver. The external power supply 11 is an electrochemical measurement device, and is connected in series to the conductor 7 connecting the oxidation electrode 1 and the reduction electrode 4. The power supply 11 may be any other power supply device. The other components are the same as those of the first embodiment.

本実施形態に係る二酸化炭素還元装置100において、酸化槽2では、電解液3と電解液3に浸漬させた白金(金属)の酸化電極1とを用いて電源11からの電流電圧(電気エネルギー)により電解液3内の水の酸化反応が行われる。還元槽5では、電源11(電気エネルギーの源)に接続された還元電極4と還元電極4に直接接触させた二酸化炭素とを用いて二酸化炭素の還元反応が行われる。In the carbon dioxide reduction device 100 according to this embodiment, in the oxidation tank 2, an oxidation reaction of water in the electrolyte 3 is carried out by current and voltage (electrical energy) from a power source 11 using an electrolyte 3 and a platinum (metal) oxidation electrode 1 immersed in the electrolyte 3. In the reduction tank 5, a carbon dioxide reduction reaction is carried out using a reduction electrode 4 connected to the power source 11 (a source of electrical energy) and carbon dioxide in direct contact with the reduction electrode 4.

具体的には、電源11が電流電圧を導線7に印加すると、電解液3内の水の酸化反応により酸素及びプロトンが生成する。プロトンは、電解質膜6を通過して酸化槽2内の電解液3から還元槽5内の還元電極4に到達する。電子は、導線7を介して電源11から還元槽5内の還元電極4に流れる。還元槽5では、還元電極4において、プロトンと電子と還元電極4に直接接触された気相の二酸化炭素とによる二酸化炭素の還元反応が引き起こされる。Specifically, when power supply 11 applies a current and voltage to conductor 7, oxygen and protons are generated by an oxidation reaction of water in electrolyte 3. The protons pass through electrolyte membrane 6 and reach reduction electrode 4 in reduction tank 5 from electrolyte 3 in oxidation tank 2. Electrons flow from power supply 11 via conductor 7 to reduction electrode 4 in reduction tank 5. In reduction tank 5, a carbon dioxide reduction reaction occurs at reduction electrode 4 between the protons, electrons, and gaseous carbon dioxide that is in direct contact with reduction electrode 4.

第2実施形態においても、第1実施形態と同様に、還元電極4は、還元槽5側の電解質膜6に接触して配置され、還元槽5側に凹凸構造および空隙孔10を備えており、凹凸構造は表面に付着する液体を滑落させることのできる撥水膜9を備える。撥水膜9の製造方法は、第1実施形態と同様に、第1製造方法~第3製造方法を用いる。 In the second embodiment, as in the first embodiment, the reduction electrode 4 is placed in contact with the electrolyte membrane 6 on the reduction tank 5 side, and is provided with an uneven structure and void holes 10 on the reduction tank 5 side, and the uneven structure is provided with a water-repellent film 9 that allows liquid adhering to the surface to slide off. As in the first embodiment, the water-repellent film 9 is manufactured using the first to third manufacturing methods.

図9は、第2実施形態に係るギ酸のファラデー効率の測定結果を示す図である。第1実施形態で説明した実施例1~実施例3のそれぞれと同一の還元電極4を用いたそれぞれの実施例を実施例4~実施例6としている。比較例3では、第1製造方法で説明した製造法において、円柱状の凹凸構造の高さが0μmであるもの、すなわち凹凸構造を有さない還元電極4を用いた。比較例4では、第1製造方法で説明した製造法において、撥水膜9を形成しない還元電極4を用いた。 Figure 9 shows the measurement results of the Faraday efficiency of formic acid according to the second embodiment. Examples 4 to 6 are examples using the same reduction electrode 4 as Examples 1 to 3 described in the first embodiment. In Comparative Example 3, a reduction electrode 4 with a cylindrical uneven structure having a height of 0 μm, i.e., no uneven structure, was used in the manufacturing method described in the first manufacturing method. In Comparative Example 4, a reduction electrode 4 without a water-repellent film 9 was used in the manufacturing method described in the first manufacturing method.

凹凸構造を有さない比較例3では、ファラデー効率が50時間以降減少した。撥水膜9を形成していない比較例4では、ファラデー効率が50時間以降減少した。一方、凹凸構造と撥水膜9を形成した実施例4~実施例6では、50時間以降でもファラデー効率は減少しなかった。これは、還元電極4表面に液体の滑落を促す凹凸構造と撥水膜9を導入した結果、液漏れした結果の還元電極4表面の液体が滑落しやすくなり、還元電極4の反応サイトが電解液3で埋まらなくなったためである。In Comparative Example 3, which did not have a concave-convex structure, the Faraday efficiency decreased after 50 hours. In Comparative Example 4, which did not have a water-repellent film 9, the Faraday efficiency decreased after 50 hours. On the other hand, in Examples 4 to 6, which had a concave-convex structure and a water-repellent film 9, the Faraday efficiency did not decrease even after 50 hours. This is because the introduction of the concave-convex structure and water-repellent film 9, which promote the liquid to slide off the surface of the reduction electrode 4, made it easier for the liquid to slide off the surface of the reduction electrode 4 due to leakage, and the reaction sites of the reduction electrode 4 were no longer filled with the electrolyte 3.

以上、第2実施形態を説明した。第2実施形態に係る二酸化炭素還元装置100によれば、ファラデー効率を落とすことなく、二酸化炭素還元反応を進行させられる二酸化炭素還元装置100を提供できる。The second embodiment has been described above. The carbon dioxide reduction device 100 according to the second embodiment can provide a carbon dioxide reduction device 100 that can proceed with the carbon dioxide reduction reaction without reducing the Faraday efficiency.

すなわち、第2実施形態では、電解液3と電解液3に浸漬させる白金(金属)の酸化電極1とを用いて電源11からの電流電圧により水の酸化反応を行う酸化槽2と、電源11に接続される還元電極4と還元電極4に直接接触させる二酸化炭素とを用いて二酸化炭素の還元反応を行う還元槽5と、酸化槽2内の電解液3と還元槽5内の還元電極4との間にそれぞれに接触して配置される電解質膜6と、を備えた二酸化炭素還元装置100において、還元槽5側の電解質膜6に接触して配置され、還元槽5側に凹凸構造および空隙孔10を備え、凹凸構造は表面に付着する液体を滑落させることのできる撥水膜9を備える。 In other words, in the second embodiment, the carbon dioxide reduction device 100 includes an oxidation tank 2 that performs a water oxidation reaction using an electric current and voltage from a power source 11 using an electrolyte 3 and a platinum (metal) oxidation electrode 1 immersed in the electrolyte 3, a reduction tank 5 that performs a carbon dioxide reduction reaction using a reduction electrode 4 connected to the power source 11 and carbon dioxide that is in direct contact with the reduction electrode 4, and an electrolyte membrane 6 that is arranged in contact with the electrolyte 3 in the oxidation tank 2 and the reduction electrode 4 in the reduction tank 5, respectively.The carbon dioxide reduction device 100 includes a water-repellent film 9 that is arranged in contact with the electrolyte membrane 6 on the reduction tank 5 side and has an uneven structure and void holes 10 on the reduction tank 5 side, and the uneven structure is capable of sliding off liquid adhering to the surface.

そのため、還元電極4の凹凸構造表面に備わる撥水膜9により、酸化槽2内の電解液3が電解質膜6の外部に滲出した結果である還元電極4表面の液体が凹凸構造表面へ移動しやすくなり、凹凸構造表面の水滴はロータス効果により滑落することで、還元電極4の反応サイトが電解液3で埋まらなくなる。その結果、二酸化炭素の還元反応を進行でき、その還元反応効率の低下を抑制できる。 Therefore, the water-repellent film 9 on the uneven surface of the reduction electrode 4 makes it easier for the liquid on the surface of the reduction electrode 4, which is the result of the electrolyte solution 3 in the oxidation tank 2 seeping out of the electrolyte membrane 6, to move to the uneven surface. Water droplets on the uneven surface slide off due to the lotus effect, preventing the reaction sites of the reduction electrode 4 from becoming filled with electrolyte solution 3. As a result, the carbon dioxide reduction reaction can proceed, and a decrease in the reduction reaction efficiency can be suppressed.

[その他]
本発明は、二酸化炭素の再資源化に関する分野に広く利用できる。第1実施形態では光エネルギーを用い、第2実施形態では電気エネルギーを用いたが、その他の再生可能エネルギーを用いてもよい。また、第1実施形態と第2実施形態とを組み合わせることも可能である。
[others]
The present invention can be widely used in the field of carbon dioxide recycling. Although light energy is used in the first embodiment and electrical energy is used in the second embodiment, other renewable energy may also be used. Furthermore, the first and second embodiments can be combined.

本発明は、酸化槽2内の電解液3と還元槽5内の還元電極4との間にそれぞれに接触して配置され、還元電極4に二酸化炭素を直接接触させて二酸化炭素の還元反応を行う二酸化炭素還元装置100に用いられる電解質膜6であれば、任意の電解質膜にも適用可能である。 The present invention can be applied to any electrolyte membrane 6 used in a carbon dioxide reduction device 100 that is placed in contact with the electrolyte solution 3 in the oxidation tank 2 and the reduction electrode 4 in the reduction tank 5, and that directly contacts carbon dioxide with the reduction electrode 4 to perform a carbon dioxide reduction reaction.

1:酸化電極
2:酸化槽
3:電解液
4:還元電極
5:還元槽
6:電解質膜
7:導線
8:光源
9:撥水膜
10:空隙孔
11:電源
100:二酸化炭素還元装置
1: Oxidation electrode 2: Oxidation tank 3: Electrolyte 4: Reduction electrode 5: Reduction tank 6: Electrolyte membrane 7: Conducting wire 8: Light source 9: Water-repellent film 10: Void hole 11: Power source 100: Carbon dioxide reduction device

Claims (2)

酸化槽と還元槽との間に設置された電解質膜の還元槽側に接触して配置され、二酸化炭素を直接接触させて二酸化炭素の還元反応を行う二酸化炭素還元装置に用いられる還元電極を製造する還元電極の製造方法において、
還元電極に凹凸構造および空隙孔を形成する工程と、
撥水剤を含む溶媒に前記還元電極を浸漬する工程と、
前記還元電極を乾燥し前記溶媒を除去する工程と、
前記還元電極の空隙孔周囲の撥水層を除去する工程と、
を行う還元電極の製造方法。
A method for manufacturing a reduction electrode for use in a carbon dioxide reduction device, which is disposed in contact with the reduction tank side of an electrolyte membrane installed between an oxidation tank and a reduction tank and performs a carbon dioxide reduction reaction by directly contacting carbon dioxide, comprising :
forming a relief structure and pores on the reduction electrode;
immersing the reduction electrode in a solvent containing a water repellent;
drying the reduction electrode to remove the solvent;
removing the water-repellent layer around the pores of the reduction electrode;
A method for manufacturing a reduction electrode.
酸化槽と還元槽との間に設置された電解質膜の還元槽側に接触して配置され、二酸化炭素を直接接触させて二酸化炭素の還元反応を行う二酸化炭素還元装置に用いられる還元電極を製造する還元電極の製造方法において、
還元電極に凹凸構造および空隙孔を形成する工程と、
前記還元電極と撥水剤を容器に入れて加熱する工程と、
前記還元電極の空隙孔周囲の撥水層を除去する工程と、
を行う還元電極の製造方法。
A method for manufacturing a reduction electrode for use in a carbon dioxide reduction device, which is disposed in contact with the reduction tank side of an electrolyte membrane installed between an oxidation tank and a reduction tank and performs a carbon dioxide reduction reaction by directly contacting carbon dioxide, comprising :
forming a relief structure and pores on the reduction electrode;
a step of heating the reduction electrode and the water repellent agent in a container;
removing the water-repellent layer around the pores of the reduction electrode;
A method for manufacturing a reduction electrode.
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WO2019176141A1 (en) 2018-03-16 2019-09-19 株式会社 東芝 Carbon dioxide electrolysis cell and electrolysis device
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WO2019176141A1 (en) 2018-03-16 2019-09-19 株式会社 東芝 Carbon dioxide electrolysis cell and electrolysis device
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