JP7809230B2 - Substrate Processing System - Google Patents

Description

This disclosure relates to a substrate processing system.

Temperature control devices have been provided for simultaneously regulating the temperatures of multiple loads in a factory (see, for example, Patent Document 1). In Patent Document 1, the temperature control device includes a heating-side circulation pipe that passes through the load, a cooling-side circulation pipe that passes through the load, and a heat pump. The heat pump includes a heat-generating core (heat exchanger) and a heat-absorbing core (heat exchanger). The heat-generating core heats the liquid flowing through the heating-side circulation pipe, and the heat-absorbing core cools the liquid flowing through the cooling-side circulation pipe.

The liquid heated by the heat-generating core flows through the circulation piping on the heating side, heating the load's heating object, and the liquid cooled by the heat-absorbing core flows through the circulation piping on the cooling side, cooling the load's cooling object.

Patent documents 2 to 5 are also listed as technologies related to this disclosure.

JP 2009-287865 A Japanese Patent Application Laid-Open No. 2002-246359 Japanese Patent Application Publication No. 11-87300 Japanese Patent Application Laid-Open No. 2021-9956 Japanese Patent Application Laid-Open No. 2015-113523

A highly efficient substrate processing system is desired.

Therefore, the present disclosure aims to provide a more efficient substrate processing system.

A first aspect of the substrate processing system includes one or more substrate processing devices that supply processing liquid to substrates to process the substrates, a heat pump device that heats the processing liquid, a heating circuit that returns the processing liquid from the heat pump device to the heat pump device, a processing liquid supply circuit that branches off from the heating circuit and supplies the processing liquid to the substrate processing device, a cooling circuit that returns coolant cooled by the heat pump device to the heat pump device, and a coolant supply circuit that branches off from the cooling circuit and supplies the coolant to the substrate processing device.

A second aspect of the substrate processing system is the substrate processing system according to the first aspect, further comprising a heater that heats the processing liquid flowing through the processing liquid supply path.

A third aspect of the substrate processing system is the substrate processing system according to the second aspect, wherein the heater includes a heat pump.

A fourth aspect of the substrate processing system is a substrate processing system according to the second or third aspect, further comprising a control unit that receives information about the substrate and causes the heater to start a heating operation.

A fifth aspect of the substrate processing system is a substrate processing system according to any one of the first to fourth aspects, wherein the heat pump device includes a heat exchanger connected to the heating circuit and formed from a thermally conductive resin, and the substrate processing system further includes a refrigerant concentration sensor that measures the concentration of the refrigerant in the heating circuit.

A sixth aspect of the substrate processing system is a substrate processing system according to any one of the first to fifth aspects, further comprising a discharge path through which waste liquid from the substrate processing apparatus flows, and a heat retention unit that keeps the heating circulation path warm with the waste liquid supplied from the discharge path.

A seventh aspect of the substrate processing system is a substrate processing system according to any one of the first to sixth aspects, further comprising a cooling unit located upstream of the cooling liquid supply path and downstream of the heat pump device, which cools the cooling liquid flowing through the cooling circulation path.

An eighth aspect of the substrate processing system is the substrate processing system according to the seventh aspect, further comprising a discharge path through which waste liquid from the substrate processing apparatus flows, and a waste liquid cooling unit that cools the waste liquid in the cooling circulation path or a branch path branching off from the cooling circulation path.

In the first aspect of the substrate processing system, the heat pump device heats the processing liquid, allowing the processing liquid to be heated more efficiently and supplied to the substrate processing apparatus. Furthermore, the cooling liquid that is the target of cooling by the heat pump device is used to cool the equipment of the substrate processing apparatus. This allows the cooling energy of the heat pump device to be utilized, thereby improving the efficiency of the substrate processing system.

According to the second aspect of the substrate processing system, the heater can heat the processing liquid at a position closer to the substrate processing apparatus than the heat pump device, allowing processing liquid whose temperature has been adjusted with greater precision to be supplied to the substrate processing apparatus.

The third aspect of the substrate processing system can further improve the efficiency of the substrate processing system.

According to the fourth aspect of the substrate processing system, the processing liquid supply path can be preheated.

According to the fifth aspect of the substrate processing system, the refrigerant concentration in the processing liquid can be monitored.

According to the sixth aspect of the substrate processing system, the heat of the waste liquid can be effectively utilized, thereby further improving the efficiency of the substrate processing system.

According to the seventh aspect of the substrate processing system, a cooling unit separate from the heat pump device is also provided, allowing the coolant to be cooled independently of the heat pump device. This allows for a wider range of adjustment for the coolant temperature.

According to the eighth aspect of the substrate processing system, the temperature of the wastewater can be quickly reduced.

1 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a first embodiment. FIG. 1 is a diagram schematically illustrating an example of a configuration of a substrate processing apparatus. FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a modified example. 10 is a flowchart illustrating an example of heater start control. FIG. 10 is a diagram schematically illustrating an example of a configuration of a heater according to a second embodiment. FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a second embodiment. 10 is a flowchart showing an example of monitoring control of the refrigerant concentration in the treatment liquid. FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a third embodiment. FIG. 2 is a diagram schematically illustrating an example of the configuration of a substrate processing apparatus and a heat retaining unit. 10 is a flowchart showing an example of discharge control of waste liquid. FIG. 10 is a diagram schematically illustrating an example of a configuration of a substrate processing system according to a fourth embodiment. FIG. 2 is a diagram schematically illustrating an example of the configuration of a waste liquid cooling unit. FIG. 10 is a diagram schematically illustrating another example of the configuration of the waste liquid cooling unit.

Embodiments will now be described with reference to the accompanying drawings. Note that the components described in these embodiments are merely examples and are not intended to limit the scope of this disclosure. In the drawings, the dimensions or number of parts may be exaggerated or simplified as necessary to facilitate understanding.

Unless otherwise specified, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only indicate that positional relationship precisely, but also indicate a state where there is a relative displacement in terms of angle or distance within a range that provides tolerance or equivalent functionality. Expressions indicating an equal state (e.g., "identical," "equal," "homogeneous," etc.) not only indicate a state where there is strict quantitative equivalence, but also indicate a state where there is a difference that provides tolerance or equivalent functionality, unless otherwise specified. Expressions indicating shape (e.g., "rectangular" or "cylindrical") not only indicate a strict geometrical shape, but also indicate a shape with irregularities or chamfers, etc., within a range that provides equivalent effects, unless otherwise specified. The expressions "comprise," "include," "have," "includes," "includes," or "have" of one component are not exclusive expressions that exclude the presence of other components. The expression "at least one of A, B, and C" includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

First Embodiment
<Configuration of Substrate Processing System>
1 is a diagram schematically illustrating an example of the configuration of a substrate processing system 100. The substrate processing system 100 includes one or more substrate processing apparatuses 10, a heat pump device 20, a heating circulation path 30, a processing liquid supply path 31, and a processing liquid replenishment unit 60.

As will be described in detail later, the substrate processing apparatus 10 is an apparatus that performs processing on substrates W. Substrates W include various types of substrates, such as semiconductor substrates, substrates for displays, substrates for photomasks, and substrates for magnetic or optical disks. In the example of FIG. 1, multiple substrate processing apparatuses 10 are provided in the substrate processing system 100. In the example of FIG. 1, substrate processing apparatuses 10A and 10B are shown as examples of substrate processing apparatuses 10. As will be described later, substrate processing apparatuses 10A and 10B supply processing liquid to substrates W to perform processing on the substrates W.

The heat pump unit 20 is a device that heats the treatment liquid flowing through the heating circulation path 30. The heating circulation path 30 is a flow path through which the treatment liquid heated by the heat pump unit 20 flows back toward the heat pump unit 20. In other words, the heating circulation path 30 is a circulation flow path that returns the treatment liquid from the heat pump unit 20 back to the heat pump unit 20.

The heat pump device 20 includes a refrigerant circulation path 21, a heat exchanger 22 for heating, a heat exchanger 23 for cooling, a compressor 24, and an expansion valve 25. The refrigerant circulation path 21 is a flow path that circulates a refrigerant, and is mainly composed of piping. The refrigerant is, for example, a carbon dioxide refrigerant or an ammonia refrigerant. The refrigerant circulation path 21 is provided with a heat exchanger 22, a heat exchanger 23, a compressor 24, and an expansion valve 25.

The compressor 24 has a suction port and a discharge port, compresses the low-temperature, low-pressure refrigerant drawn in through the suction port, and discharges the compressed high-temperature, high-pressure refrigerant from the discharge port. The high-temperature, high-pressure refrigerant from the compressor 24 flows through the refrigerant circulation path 21 toward the heat exchanger 22 and flows into the heat exchanger 22.

The heat exchanger 22 exchanges heat between the refrigerant and the treatment liquid. Specifically, the heat exchanger 22 includes a refrigerant flow path 221 through which the refrigerant flows and a treatment liquid flow path 222 through which the treatment liquid flows. The upstream end of the treatment liquid flow path 222 is connected to the downstream end of the heating circulation path 30, and the downstream end of the treatment liquid flow path 222 is connected to the upstream end of the heating circulation path 30. The heating circulation path 30 is primarily composed of piping. A pump (not shown) may be provided in the heating circulation path 30. The pump delivers the treatment liquid through the heating circulation path 30. This causes the treatment liquid to circulate through the heating circulation path 30 and the treatment liquid flow path 222. The treatment liquid is not particularly limited, but may be, for example, pure water.

The heat exchanger 22 exchanges heat between the refrigerant flowing through the refrigerant flow path 221 and the treatment liquid flowing through the treatment liquid flow path 222. Specifically, in the heat exchanger 22, heat is transferred from the high-temperature, high-pressure refrigerant to the treatment liquid. As a result, the refrigerant is cooled and liquefied, while the treatment liquid is heated.

A portion of the processing liquid heated by the heat pump unit 20 is supplied to each substrate processing apparatus 10 (specifically, substrate processing apparatus 10A and substrate processing apparatus 10B) via a processing liquid supply path 31 branching off from the heating circulation path 30, as described below.

The refrigerant from the heat exchanger 22 flows through the refrigerant circuit 21 toward the expansion valve 25. The refrigerant expands in the expansion valve 25. The expanded, low-temperature, low-pressure refrigerant flows through the refrigerant circuit 21 toward the heat exchanger 23 and flows into the heat exchanger 23.

A refrigerant flow path 231 through which a refrigerant flows is formed within the heat exchanger 23. In the example of FIG. 1, a coolant flow path 232 through which a coolant flows is also formed within the heat exchanger 23. In the example of FIG. 1, the upstream end of the coolant flow path 232 is connected to the downstream end of the cooling circulation path 40, and the downstream end of the coolant flow path 232 is connected to the upstream end of the cooling circulation path 40. The cooling circulation path 40 is a flow path through which the coolant cooled by the heat pump unit 20 flows back toward the heat pump unit 20. In other words, the cooling circulation path 40 is a circulation path for returning the coolant from the heat pump unit 20 to the heat pump unit 20. The cooling circulation path 40 is mainly composed of piping. A pump (not shown) may be provided in the cooling circulation path 40. The pump pumps the coolant through the cooling circulation path 40. As a result, the coolant circulates through the cooling circulation path 40 and the coolant flow path 232. The coolant is not particularly limited, but may be, for example, pure water.

The heat exchanger 23 exchanges heat between the refrigerant flowing through the refrigerant flow path 231 and the cooling liquid flowing through the cooling liquid flow path 232. Specifically, in the heat exchanger 23, heat is transferred from the cooling liquid to the refrigerant. As a result, the refrigerant is heated and vaporized, while the cooling liquid is cooled. Ideally, the amount of heat transferred from the cooling liquid to the refrigerant in the heat exchanger 23 is equal to the amount of heat transferred from the refrigerant to the treatment liquid in the heat exchanger 22.

In the example of Figure 1, a portion of the cooling liquid cooled by the heat pump unit 20 is supplied to each substrate processing apparatus (specifically, substrate processing apparatus 10C and substrate processing apparatus 10D, described below) through a cooling liquid supply path 41 branching off from the cooling circulation path 40, as described below.

Heat exchangers 22 and 23 are made of, for example, a thermally conductive resin. Examples of thermally conductive resins that can be used include polypropylene and polyethylene. It is desirable that the thermal conductivity of the material that makes up heat exchangers 22 and 23 be higher than the thermal conductivity of the material of the piping that forms any of the refrigerant circulation path 21, heating circulation path 30, cooling circulation path 40, treatment liquid supply path 31, cooling liquid supply path 41 (described below), and cooling liquid return path 42 (described below).

Next, the piping system for supplying the processing liquid to the substrate processing apparatus 10 will be described in more detail. The processing liquid supply path 31 is a flow path branching off from the heating circulation path 30. The processing liquid flows through the processing liquid supply path 31 from the heating circulation path 30 toward the substrate processing apparatus 10. In other words, the processing liquid supply path 31 is a flow path for supplying the processing liquid to the substrate processing apparatus 10. The processing liquid supply path 31 is mainly composed of piping, and connects the heating circulation path 30 to the substrate processing apparatus 10. In the example of Figure 1, a processing liquid supply path 31 is provided one-to-one for each of the multiple substrate processing apparatuses 10 to which the processing liquid is to be supplied. A portion of the processing liquid in the heating circulation path 30 is supplied to the substrate processing apparatus 10 through each processing liquid supply path 31.

The processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through the discharge path 118, as will be described in detail later. Because the processing liquid is discharged to the outside in this manner, the amount of processing liquid circulating through the heating circulation path 30 decreases by the amount supplied to the substrate processing apparatus 10. Therefore, in this embodiment, a processing liquid replenishment unit 60 is provided.

The processing liquid replenishment unit 60 supplies processing liquid to the heating circuit 30. This replenishes the processing liquid in the heating circuit 30. In the example shown in FIG. 1, the processing liquid replenishment unit 60 includes a processing liquid replenishment path 61 and a replenishment tank 62. The processing liquid replenishment path 61 is mainly composed of piping, and its downstream end is connected to the heating circuit 30. As a more specific example, the downstream end of the processing liquid replenishment path 61 is connected to the heating circuit 30 upstream of the heat exchanger 22 and downstream of all upstream ends of the processing liquid supply path 31. The upstream end of the processing liquid replenishment path 61 is connected to the replenishment tank 62. The replenishment tank 62 stores the processing liquid. The processing liquid from the replenishment tank 62 is supplied to the heating circuit 30 via the processing liquid replenishment path 61.

As described above, the processing liquid is heated in the heat exchanger 22. Immediately after the heat exchanger 22, the temperature of the processing liquid is, for example, approximately 60°C to 70°C. Then, a portion of the heated processing liquid flows from the heating circulation path 30 into the processing liquid supply path 31 and is supplied to each substrate processing apparatus 10 through the processing liquid supply path 31. Meanwhile, the remaining portion of the processing liquid flows downstream through the heating circulation path 30.

The processing liquid replenishment unit 60 supplies processing liquid, for example, at room temperature, to the heating circulation path 30. As a result, the temperature of the processing liquid drops downstream of the junction of the heating circulation path 30 and the processing liquid replenishment path 61. For example, the temperature of the processing liquid drops to about 30°C. This low-temperature processing liquid then flows into the heat exchanger 22, where it is heated again to about 60°C to 70°C.

Next, the piping system for supplying coolant to the substrate processing apparatus 10 (specifically, substrate processing apparatus 10C and substrate processing apparatus 10D) will be described in more detail. In the example of FIG. 1, a coolant supply path 41 and a coolant return path 42 are provided between the cooling circulation path 40 and each substrate processing apparatus 10 (specifically, substrate processing apparatus 10C and substrate processing apparatus 10D). The coolant supply path 41 is primarily composed of piping, with its upstream end connected to the cooling circulation path 40 and its downstream end connected to the substrate processing apparatus 10. The coolant return path 42 is primarily composed of piping, with its downstream end connected to the cooling circulation path 40 and its upstream end connected to the substrate processing apparatus 10. In the example of FIG. 1, a pair of coolant supply path 41 and coolant return path 42 is provided corresponding to each substrate processing apparatus 10 (e.g., substrate processing apparatus 10C and substrate processing apparatus 10D) to which the coolant is to be supplied.

A portion of the cooling liquid in the cooling circulation path 40 is supplied to the substrate processing apparatus 10 through the cooling liquid supply path 41. As described below, this cooling liquid is used to cool the equipment (components) within the substrate processing apparatus 10. In other words, the cooling liquid cools the components by receiving heat from them. After cooling the components, the cooling liquid returns to the cooling circulation path 40 via the cooling liquid return path 42.

In the example shown in FIG. 1, the cooling circuit 40 is provided with a cooling unit 48. Specifically, the cooling unit 48 is provided in the cooling circuit 40 upstream of the upstream ends of all the cooling liquid supply lines 41 and downstream of the heat exchanger 23. The cooling unit 48 cools the cooling liquid flowing through the cooling circuit 40. The cooling unit 48 is, for example, a cooling water circulation device (a so-called chiller).

As described above, the coolant is cooled in the heat exchanger 23. Immediately after the heat exchanger 23, the temperature of the coolant is, for example, about 20°C. The coolant flows through the cooling circuit 40 from the heat exchanger 23 toward the cooling unit 48 and enters the cooling unit 48. The cooling unit 48 cools the coolant to a temperature suitable for cooling the equipment of the substrate processing apparatus 10. The coolant cooled by the cooling unit 48 is supplied from the cooling circuit 40 through each cooling circuit 41 to each substrate processing apparatus 10, cools the equipment of each substrate processing apparatus 10, and returns to the cooling circuit 40 through each cooling circuit return circuit 42. The coolant then flows through the cooling circuit 40 toward the heat exchanger 23 and enters the heat exchanger 23. Immediately before the heat exchanger 23, the temperature of the coolant is, for example, about 30°C. The coolant is cooled again in the heat exchanger 23, for example, to about 20°C.

The substrate processing system 100 also includes a control unit 90. The control unit 90 controls various components of the substrate processing system 100. For example, the control unit 90 includes an arithmetic processing unit 91 and a storage medium 92. The arithmetic processing unit 91 is a processing unit such as a CPU (Central Processing Unit) that performs various arithmetic processing. The storage medium 92 includes, for example, a temporary storage medium such as a ROM (Read Only Memory), which is a read-only memory that stores basic programs, a RAM (Random Access Memory), which is a readable and writable memory that stores various information, and a non-temporary storage medium such as a magnetic disk that stores control software or data. When the arithmetic processing unit 91 of the control unit 90 executes a predetermined processing program, the control unit 90 controls each operating mechanism of the substrate processing system 100, and processing in the substrate processing system 100 progresses. Note that the control unit 90 may be implemented as a dedicated hardware circuit that does not require software to realize its functions.

In addition, although a single control unit 90 is shown in the example of Figure 1, each substrate processing apparatus 10, heat pump apparatus 20, and other components may be provided with their own control unit 90, which may communicate with each other to control the substrate processing system 100.

Next, a specific example of the internal configuration of the substrate processing apparatus 10 will be described. Figure 2 is a diagram that schematically shows an example of the configuration of the substrate processing apparatus 10. In the example of Figure 2, two types of substrate processing apparatus 10 are shown. Specifically, substrate processing apparatus 10A and substrate processing apparatus 10B, which are targets of supplying processing liquid, are shown as processing apparatuses that supply processing liquid to substrates W, and substrate processing apparatus 10C and substrate processing apparatus 10D, which are targets of supplying cooling liquid, are shown as processing apparatuses that perform heat treatment on substrates W.

Each of the substrate processing apparatuses 10A and 10B includes one or more processing units 11, and in the example of FIG. 2, multiple processing units 11 are shown. In the example of FIG. 2, each processing unit 11 includes a chamber 111, a substrate holder 112, a nozzle 114, a nozzle 115, and a guard 116.

The substrate holding part 112 is provided in the chamber 111 and holds the substrate W in a horizontal position. A horizontal position here means that the thickness direction of the substrate W is aligned with the vertical direction. The substrate W is transported into the chamber 111 by a substrate transport part (not shown) and handed over to the substrate holding part 112. In the example of FIG. 2, the substrate holding part 112 includes a plurality of chuck pins 113. Each of the plurality of chuck pins 113 is movable between a chuck position in contact with the peripheral edge of the substrate W and a release position away from the peripheral edge of the substrate W. When the plurality of chuck pins 113 move to their respective chuck positions, the plurality of chuck pins 113 hold the substrate W. When the plurality of chuck pins 113 move to their respective release positions, the substrate W is released from its hold.

The substrate holder 112 also includes a motor (not shown) that rotates the substrate W around a rotation axis Q1. The rotation axis Q1 passes through the center of the substrate W and is an axis that runs vertically. Such a substrate holder 112 may also be called a spin chuck.

Nozzle 114 is provided in chamber 111 and is used to supply processing liquid to the upper surface of substrate W. Nozzle 115 is provided in chamber 111 and is used to supply processing liquid to the lower surface of substrate W. Nozzle 114 is provided vertically above the upper surface of substrate W, and nozzle 115 is provided vertically below the lower surface of substrate W. Nozzle 114 ejects processing liquid toward the upper surface of substrate W, and nozzle 115 ejects processing liquid toward the lower surface of substrate W.

Nozzle 114 and nozzle 115 are connected to the processing liquid supply path 31. The processing liquid supply path 31 includes supply path 31a, supply path 31b, supply path 31c, and supply path 31d. The upstream end of supply path 31a corresponds to the upstream end of the processing liquid supply path 31 and is connected to the heating circulation path 30. Supply path 31a is connected to the upstream ends of multiple supply paths 31b, which are provided corresponding to the multiple processing units 11, respectively. The downstream end of each supply path 31b is connected to the upstream ends of supply path 31c and supply path 31d. The downstream end of supply path 31c is connected to nozzle 114, and the downstream end of supply path 31d is connected to nozzle 115.

A valve 32 is provided on supply path 31c. When valve 32 is opened, processing liquid is supplied from heating circulation path 30 through supply paths 31a, 31b, and 31c to nozzle 114, and the processing liquid is ejected from nozzle 114 onto the top surface of substrate W. When valve 32 is closed, ejection of processing liquid from nozzle 114 stops.

A valve 33 is provided on supply path 31d. When valve 33 is opened, processing liquid is supplied from heating circulation path 30 through supply paths 31a, 31b, and 31d to nozzle 115, and the processing liquid is ejected from nozzle 115 onto the underside of substrate W. When valve 33 is closed, ejection of processing liquid from nozzle 115 stops.

In the example of FIG. 2, a heater 34 is provided in the supply path 31b. The heater 34 heats the processing liquid flowing through the processing liquid supply path 31 (specifically, the supply path 31b). The heater 34 heats the processing liquid so that the temperature of the processing liquid that lands on the substrate W is within a predetermined temperature range that includes a predetermined process temperature. The heater 34 may be a heater of various types, for example, an electric resistance heater. The heater 34 adjusts the temperature of the processing liquid to the process temperature by raising the temperature of the processing liquid by, for example, a value between 10°C and 20°C.

When the substrate holder 112 rotates the substrate W around the rotation axis Q1, the valve 32 opens, causing the nozzle 114 to eject high-temperature processing liquid onto the upper surface of the rotating substrate W. The processing liquid that has landed on the upper surface of the substrate W is subjected to centrifugal force associated with the rotation, spreading over the upper surface of the substrate W and splashing outward from the periphery of the substrate W. This allows the upper surface of the substrate W to be processed.

In addition, while the substrate holder 112 rotates the substrate W around the rotation axis Q1, the valve 33 opens, causing the nozzle 115 to eject high-temperature processing liquid onto the underside of the rotating substrate W. The processing liquid that has landed on the underside of the substrate W is subjected to centrifugal force associated with the rotation, spreading over the underside of the substrate W and splashing outward from the periphery of the substrate W. This allows the underside of the substrate W to be processed with the processing liquid.

The guard 116 has a cylindrical shape that surrounds the substrate holder 112 and catches the processing liquid that has splashed from the periphery of the substrate W. The processing liquid that is caught on the inner surface of the guard 116 flows down along the inner surface and is caught in the cup 117. The cup 117 is connected to the upstream end of the discharge path 118, and the processing liquid is discharged to the outside through the discharge path 118. The discharge path 118 is mainly composed of piping.

In the example of FIG. 2, the substrate processing apparatus 10C and the substrate processing apparatus 10D include a thermal processing unit 12. In the example of FIG. 2, the thermal processing unit 12 includes a chamber 121, a substrate holder 122, and a heater 123. The substrate holder 122 is provided in the chamber 121 and holds the substrate W in a horizontal position. The substrate holder 122 includes, for example, a support table that supports the peripheral portion of the lower surface of the substrate W. The substrate W is transported into the chamber 121 by a substrate transport unit (not shown) and handed over to the substrate holder 122. The heater 123 is provided in the chamber 121 and heats the substrate W held by the substrate holder 122. This allows thermal processing to be performed on the substrate W. This thermal processing also increases the temperature of the chamber 121 as a secondary effect.

In the example shown in Figure 2, the downstream end of the coolant supply path 41 is connected to the upstream end of the cooling path 43, and the downstream end of the cooling path 43 is connected to the upstream end of the coolant return path 42. The cooling path 43 is mainly composed of piping and is arranged to surround the chamber 121. As a specific example, the cooling path 43 is provided along the outer wall of the chamber 121. The cooling path 43 may also be embedded in the side wall of the chamber 121 or provided along the inner wall of the chamber 121.

The processing liquid from the cooling circulation path 40 flows through the cooling liquid supply path 41, the cooling path 43, and the cooling liquid return path 42 in that order, before returning to the cooling circulation path 40. This allows heat to be transferred from the high-temperature chamber 121 to the low-temperature cooling liquid in the cooling path 43, thereby cooling the chamber 121. This allows a material with low heat resistance to be used as the material for the chamber 121. In other words, there is no need to use a material with high heat resistance, improving the material selectivity for the chamber 121.

Note that although the example in Figure 2 shows the chamber 121 as the object to be cooled, this is not necessarily limited to this. Any component of the substrate processing apparatus 10 can be used as the object to be cooled.

<Effects of the embodiment>
As described above, in the substrate processing system 100, the heat pump unit 20 heats the processing liquid. Since the heat pump unit 20 can heat the processing liquid with high thermal efficiency, the efficiency of the substrate processing system 100 can be improved.

Furthermore, the substrate processing system 100 is provided with a heating circulation path 30. This allows a portion of the processing liquid heated by the heat exchanger 22 to flow back into the heat exchanger 22, thereby enabling the temperature of the processing liquid flowing through the heating circulation path 30 to be adjusted with greater precision.

In addition, in the above example, the processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through the discharge path 118 without returning to the heating circulation path 30, but the processing liquid replenishment unit 60 supplies processing liquid to the heating circulation path 30. This makes it possible to compensate for the decrease in the amount of processing liquid circulating in the heating circulation path 30 that occurs when processing liquid is supplied to the substrate processing apparatus 10. Therefore, it is possible to continue to supply processing liquid appropriately to the substrate processing apparatus 10.

Furthermore, in the above example, a heater 34 is provided corresponding to each processing unit 11 of the substrate processing apparatus 10. In other words, the heater 34 is provided at a position closer to the nozzle 114 and nozzle 115 of each substrate processing apparatus 10 than the heat pump device 20. Therefore, the temperature of the processing liquid discharged from the nozzle 114 or nozzle 115 can be adjusted to the process temperature with greater precision by the heater 34. This allows the substrate W to be processed more appropriately.

Furthermore, in the above example, thermally conductive resins such as polypropylene and polyethylene are used as the material for the heat exchanger 22. Such resins are formed with high purity, so even when the processing liquid passes through the processing liquid flow path 222 of the heat exchanger 22, almost no impurities are eluted from the heat exchanger 22 into the processing liquid. Therefore, the substrate processing apparatus 10 can process substrates W with clean processing liquid.

Note that the entire heat exchanger 22 does not necessarily need to be made of this resin; only the portion that makes up the treatment liquid flow path 222 may be made of this resin.

However, because the density of such resins is relatively low, the refrigerant may mix from the refrigerant flow path 221 into the treatment liquid flow path 222 within the heat exchanger 22. However, in the above example, a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant. Even if carbon dioxide or ammonia mixes into the treatment liquid, it is less likely to affect the treatment of the substrate W. Therefore, even if the refrigerant mixes into the treatment liquid, the treatment of the substrate W can be performed more appropriately than with other refrigerants.

Furthermore, in the above example, the cooling liquid to be cooled by the heat pump unit 20 is used to cool the equipment of the substrate processing apparatus 10C and the substrate processing apparatus 10D. This allows the energy on the cooling side of the heat pump unit 20 to be utilized, further improving the efficiency of the substrate processing system 100.

In the heat pump device 20, the amount of heat transferred from the refrigerant to the processing liquid is approximately equal to the amount of heat transferred from the cooling liquid to the refrigerant. However, in the example described above, a cooling unit 48 is also provided. This cooling unit 48 therefore allows the temperature of the cooling liquid to be adjusted independently of the temperature of the processing liquid immediately after the heat exchanger 22. This makes it possible to expand the temperature adjustment range of the cooling liquid supplied to the substrate processing device 10.

In the above example, the cooling unit 48 is provided in the cooling circulation path 40. The cooling liquid cooled by this cooling unit 48 is supplied to the substrate processing apparatus 10C and the substrate processing apparatus 10D through their respective cooling liquid supply paths 41. Because the lengths of the cooling liquid supply paths 41 may differ between the substrate processing apparatus 10C and the substrate processing apparatus 10D, the temperature of the cooling liquid may vary between the substrate processing apparatus 10C and the substrate processing apparatus 10D. Therefore, the temperature of the cooling object (e.g., chamber 121) may vary between the substrate processing apparatus 10C and the substrate processing apparatus 10D. However, compared to the temperature of the processing liquid, the temperature of the cooling object has almost no effect on the processing of the substrate W. Therefore, even if the temperature of the cooling liquid varies, no problems will arise in the processing of the substrate W.

In the above example, the cooling section 48 is provided in the cooling circuit 40, which simplifies the configuration of the substrate processing system 100 and reduces manufacturing costs compared to when separate cooling sections 48 are provided for the substrate processing apparatus 10C and the substrate processing apparatus 10D.

<Modification>
In the example of FIG. 1 , the cooling liquid is supplied to substrate processing apparatuses 10 (substrate processing apparatuses 10C and 10D) that are different from the substrate processing apparatuses 10 (substrate processing apparatuses 10A and 10B) to which the high-temperature processing liquid is supplied. However, this is not necessarily limited to this. For example, if the substrate processing apparatuses 10A and 10B are provided with equipment that requires cooling, the cooling liquid may be supplied to the substrate processing apparatuses 10A and 10B. In this case, the cooling path 43 may be appropriately arranged in the substrate processing apparatuses 10A and 10B along the equipment to be cooled.

In the above example, the cooling liquid cooled the equipment of the substrate processing apparatus 10, but the cooling liquid may also be supplied to the substrate W. In this case, the cooling liquid corresponds to the processing liquid. Figure 3 is a diagram schematically showing an example of a portion of the configuration of the substrate processing system 100. In the example of Figure 3, the upstream end of the cooling liquid supply path 44 is connected to the cooling circulation path 40. The cooling liquid supply path 44 is also mainly composed of piping. The cooling liquid is supplied to the substrate processing apparatus 10 through the cooling liquid supply path 44. In the example of Figure 3, the substrate processing apparatus 10 further includes a nozzle 1141. The nozzle 1141 sprays the cooling liquid onto the upper surface of the substrate W. The cooling liquid is, for example, pure water.

As shown in FIG. 3, nozzle 1141 is connected to coolant supply path 44. Coolant supply path 44 includes supply path 44a, supply path 44b, supply path 44c, and supply path 44d. The upstream end of supply path 44a corresponds to the upstream end of coolant supply path 44 and is connected to cooling circulation path 40. Supply path 44a is connected to the upstream ends of multiple supply paths 44b provided corresponding to multiple processing units 11. The downstream end of each supply path 44b is connected to the upstream ends of supply path 44c and supply path 44d. The downstream end of supply path 44c is connected to nozzle 1141, and the downstream end of supply path 44d is connected to nozzle 115.

A valve 45 is provided on supply path 44c. When valve 45 is opened, coolant is supplied from cooling circulation path 40 through supply paths 44a, 44b, and 44c to nozzle 1141, and is then sprayed from nozzle 1141 onto the top surface of substrate W. When valve 45 is closed, the spray of coolant from nozzle 1141 stops.

A valve 46 is provided on supply path 44d. When valve 46 is opened, cooling liquid is supplied from cooling circulation path 40 through supply paths 44a, 44b, and 44d to nozzle 115, and the cooling liquid is ejected from nozzle 115 onto the underside of the substrate W. When valve 46 is closed, ejection of processing liquid from nozzle 115 stops.

The coolant splashes outward from the periphery of the substrate W and is discharged to the outside through the guard 116, cup 117, and discharge path 118. In this case, the amount of coolant circulating through the cooling circuit 40 may decrease. Therefore, in the example of FIG. 3, the substrate processing system 100 is provided with a coolant replenishment unit 65. The coolant replenishment unit 65 supplies coolant to the cooling circuit 40. In the example of FIG. 3, the coolant replenishment unit 65 includes a coolant replenishment path 66 and a replenishment tank 67. The coolant replenishment path 66 is primarily composed of piping, and its downstream end is connected to the cooling circuit 40. As a specific example, the downstream end of the coolant replenishment path 66 is connected to the cooling circuit 40 upstream of the heat exchanger 23 and downstream of all the coolant supply paths 44. The upstream end of the coolant replenishment path 66 is connected to the replenishment tank 67. The replenishment tank 67 stores coolant. The coolant from the replenishment tank 67 is supplied to the cooling circuit 40 through the coolant replenishment path 66. This replenishes the cooling liquid in the cooling circuit 40. If the cooling liquid is the same type of liquid as the processing liquid, the replenishment tank 67 may be the same tank as the replenishment tank 62.

<Control of heater 34>
Each processing unit 11 supplies a processing liquid to the loaded substrate W to perform processing. Initially, the temperature of the processing liquid supply path 31 is not high. As described above, when a high-temperature processing liquid flows through the low-temperature processing liquid supply path 31, heat is transferred from the processing liquid to the processing liquid supply path 31, and the temperature of the processing liquid may decrease. Therefore, initially, even with the heating operation of the heater 34, the temperature of the processing liquid may not be able to increase to the process temperature.

Therefore, the control unit 90 of the substrate processing apparatus 10 may cause the heater 34 to start heating before opening the valves 32 and 33. Figure 4 is a flowchart showing an example of heater start control. The control unit 90 determines whether information regarding the substrates W (hereinafter referred to as pre-operation information) has been received (step S1). The pre-operation information includes various information such as the number of substrates W to be loaded into the substrate processing apparatus 10 and a recipe indicating the processing procedure for the substrates W. The pre-operation information is transmitted to the control unit 90 from, for example, a host computer or an apparatus upstream from the substrate processing apparatus 10, or is input to the control unit 90 by an operator via a user interface (not shown).

If the control unit 90 has not yet received the pre-operation information, the substrate processing apparatus 10 is not yet scheduled to process a substrate W, and so step S1 is executed again. On the other hand, when the control unit 90 has received the pre-operation information, the control unit 90 causes the heater 34 belonging to the substrate processing apparatus 10 to start a heating operation (step S2).

As described above, the control unit 90 starts the heating operation of the heater 34 in response to receiving the pre-operation information. This allows the heater 34 to start the heating operation before supplying the processing liquid to the substrate W, more specifically, before the substrate W is loaded into each processing unit 11. Therefore, the heater 34 can preheat the processing liquid supply path 31. Therefore, even when the supply of the processing liquid to the substrate W begins, the heater 34 can adjust the processing liquid to the process temperature with high precision, allowing the processing unit 11 to process the substrate W more appropriately.

Second Embodiment
The configuration of the substrate processing system 100 according to the second embodiment is similar to that of the first embodiment. In the second embodiment, an example of the internal configuration of the heater 34 will be described.

Figure 5 is a schematic diagram showing an example of the configuration of the heater 34 according to the second embodiment. In the example shown in Figure 5, the heater 34 is a heat pump. Specifically, the heater 34 includes a refrigerant circuit 341, a heat exchanger 342 for heating, a heat exchanger 343 for cooling, a compressor 344, and an expansion valve 345. The refrigerant circuit 341 is mainly composed of piping. A refrigerant flows through the refrigerant circuit 341. The refrigerant is a carbon dioxide refrigerant or an ammonia refrigerant. The refrigerant circuit 341 is provided with a heat exchanger 342, a heat exchanger 343, a compressor 344, and an expansion valve 345. These are similar to those in the heat pump device 20, so a repeated description will be avoided here. Note that the heat exchanger 343 may be a heat exchanger that exchanges heat between a refrigerant and a cooling liquid, or a heat exchanger that exchanges heat between a refrigerant and outside air.

In the second embodiment, the heater 34 is a heat pump, which allows the processing liquid to be heated with high thermal efficiency. This further improves the efficiency of the substrate processing system 100.

Third Embodiment
In the first and second embodiments, a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant. Even if these refrigerants are mixed into the processing liquid, they are unlikely to affect the processing of the substrate W. However, if the concentration of the refrigerant in the processing liquid becomes very high, it may adversely affect the processing of the substrate W. Furthermore, if a refrigerant other than a carbon dioxide refrigerant or an ammonia refrigerant is used as the refrigerant, even a small amount of the refrigerant mixed into the processing liquid may adversely affect the processing of the substrate W.

Therefore, the third embodiment aims to provide technology that can monitor the concentration of refrigerant in the treatment liquid.

Figure 6 is a diagram schematically illustrating an example of a portion of the configuration of a substrate processing system 100A according to the third embodiment. Note that in the example of Figure 6, the configuration on the cooling target side of the heat pump unit 20 is omitted to avoid cluttering the drawing.

Substrate processing system 100A differs from substrate processing system 100 in the presence or absence of refrigerant concentration sensor 70. Refrigerant concentration sensor 70 measures the refrigerant concentration in the processing liquid flowing through heating circulation path 30 and outputs a measurement result signal indicating the measurement result to control unit 90. When carbon dioxide refrigerant is used as the refrigerant, refrigerant concentration sensor 70 measures the concentration of carbon dioxide dissolved in the processing liquid. When ammonia is used as the refrigerant, refrigerant concentration sensor 70 measures the concentration of ammonia dissolved in the processing liquid. In the example of Figure 6, refrigerant concentration sensor 70 is provided in heating circulation path 30 downstream of all upstream ends of processing liquid supply path 31 and upstream of the downstream end of processing liquid replenishment path 61.

In the example of FIG. 6, the substrate processing system 100A is also provided with a notification unit 93. The notification unit 93 notifies the operator of various information. For example, the notification unit 93 includes at least one of a display such as a liquid crystal display, and a speaker. The display displays various information, and the speaker outputs the information audibly.

The control unit 90 monitors and controls the refrigerant concentration in the treatment liquid based on the measurement results of the refrigerant concentration sensor 70. Figure 7 is a flowchart showing an example of the monitoring control. First, the refrigerant concentration sensor 70 measures the refrigerant concentration in the treatment liquid (step S11). The refrigerant concentration sensor 70 outputs a measurement result signal indicating the measured refrigerant concentration to the control unit 90.

Next, the control unit 90 determines whether the refrigerant concentration measured by the refrigerant concentration sensor 70 is equal to or greater than a predetermined refrigerant reference value (step S12). The refrigerant reference value is, for example, a value equal to or less than the refrigerant concentration at which the degree of adverse effect of processing on the substrate W becomes tolerable. If the refrigerant concentration is less than the refrigerant reference value, step S11 is executed again.

When the refrigerant concentration is equal to or greater than the refrigerant reference value, the control unit 90 executes at least one of notification control and stop control. Stop control is control that stops the substrate processing system 100A. This makes it possible to avoid problems with the processing of substrates W caused by the refrigerant being mixed into the processing liquid.

Notification control is control in which the control unit 90 causes the notification unit 93 to issue a notification. If the notification unit 93 includes a display, the display displays information indicating that the refrigerant concentration is equal to or greater than the refrigerant reference value. If the notification unit 93 includes a speaker, the notification unit 93 outputs audible information indicating that the refrigerant concentration is equal to or greater than the refrigerant reference value.

Based on this notification, workers can recognize that the refrigerant concentration in the treatment liquid is increasing and can take appropriate measures, such as replacing the heat exchanger 22.

<Fourth embodiment>
8 is a diagram showing an example of the configuration of a substrate processing system 100B according to the fourth embodiment. The substrate processing system 100B differs from the substrate processing system 100 in that a heat retention unit 50 is provided.

High-temperature processing liquid is supplied to the heat retention unit 50 from the substrate processing apparatus 10 through the discharge path 118. Hereinafter, the processing liquid flowing from the substrate processing apparatus 10 into the discharge path 118 will also be referred to as waste liquid. The heat retention unit 50 uses the heat of the high-temperature waste liquid to keep the heating circulation path 30 warm. In other words, the heat retention unit 50 suppresses heat diffusion from the heating circulation path 30 to the outside.

Figure 9 is a diagram showing an example of the specific configuration of the substrate processing apparatus 10 and the heat retention unit 50. In the example of Figure 9, the substrate processing apparatus 10 further includes a nozzle 1142. The nozzle 1142 supplies a high-temperature processing liquid to the upper surface of the substrate W. The nozzle 1142 is connected to the downstream end of the processing liquid supply path 311. The upstream end of the processing liquid supply path 311 is connected to a processing liquid supply source (not shown). The processing liquid supply path 311 is also mainly composed of piping. The processing liquid supply source supplies a high-temperature processing liquid to the processing liquid supply path 311. The processing liquid includes, for example, at least one of SPM (sulfuric acid-hydrogen peroxide solution) at approximately 100°C to 120°C, SC-1 (ammonia-hydrogen peroxide solution) at approximately 75°C to 85°C, and SC-2 (hydrochloric acid-hydrogen peroxide solution) at approximately 75°C to 85°C.

In the example of Figure 9, multiple guards 116, multiple cups 117, and multiple discharge channels 118 are provided. Each guard 116 has a coaxial cylindrical shape and is capable of moving up and down. Cups 117 are provided corresponding to the multiple guards 116 and receive the processing liquid flowing down from the corresponding guard 116. Discharge channels 118 are provided corresponding to the multiple cups 117 and discharge the processing liquid received by the corresponding cup 117.

When the guard 116 corresponding to the type of processing liquid is raised and that type of processing liquid is supplied to the substrate W, the processing liquid splashes off the periphery of the substrate W, is caught by the guard 116, and is then discharged through the corresponding cup 117 and discharge path 118. This allows the processing liquid to be sorted and discharged by type.

Here, the processing liquid ejected from nozzle 1142 is supplied to the heat retention unit 50 through the guard 116, cup 117, and discharge path 118 corresponding to the processing liquid. Note that the waste liquid supplied to the heat retention unit 50 is not limited to the high-temperature processing liquid ejected from nozzle 1142, but may also be the high-temperature processing liquid ejected from nozzle 114 or nozzle 115.

In the example shown in Figure 9, the heat retention unit 50 includes a tank 51. High-temperature waste liquid is supplied to the tank 51 from the discharge path 118. This causes the waste liquid to be stored in the tank 51.

In the example of Figure 9, a portion of the heating circuit 30 is immersed in the waste liquid in the tank 51. This portion of the heating circuit 30 is, for example, at least a portion of the heating circuit 30 that is downstream of all upstream ends of the treatment liquid supply paths 31 and upstream of the heat exchanger 22. In the example of Figure 9, this portion of the heating circuit 30 has a U-shape and is immersed in the waste liquid in the tank 51. The other portion of the heating circuit 30 extends outside the tank 51 through the top opening of the tank 51.

In this way, part of the heating circuit 30 is immersed in the high-temperature wastewater, so heat is transferred from the high-temperature wastewater to part of the heating circuit 30. In other words, the temperature of part of the heating circuit 30 can be raised.

As described above, in the fourth embodiment, the heat of the high-temperature waste liquid discharged to the outside through the discharge path 118 is used to keep the heating circulation path 30 warm. This allows the heat of the waste liquid to be used effectively, further improving the efficiency of the substrate processing system 100B.

In the example shown in FIG. 8 , the downstream end of the processing liquid replenishment path 61 of the processing liquid replenishment unit 60 is connected to the heating circulation path 30 between the heat exchanger 22 and the heat retention unit 50. However, this is not necessarily limited to this. The downstream end of the processing liquid replenishment path 61 may be connected to the heating circulation path 30 upstream of the heat retention unit 50 and downstream of all upstream ends of the processing liquid supply path 31. In the example shown in FIG. 8 , this processing liquid replenishment path 61 is indicated by a two-dot chain line. In this case, a lower temperature processing liquid flows through the portion of the heating circulation path 30 immersed in the tank 51. This is because the merging of the processing liquid from the processing liquid replenishment unit 60 into the heating circulation path 30 lowers the temperature of the processing liquid, and the amount of heat transferred from the wastewater in the tank 51 to the heating circulation path 30 increases. This allows for more effective use of the heat from the wastewater, improving the efficiency of the substrate processing system 100.

Next, we will explain the discharge of waste liquid from tank 51. In the example of Figure 9, the upstream end of discharge path 52 is connected to tank 51. Discharge path 52 is mainly composed of piping. A valve 53 is provided on discharge path 52, and when valve 53 is opened, waste liquid from tank 51 is discharged to the outside through discharge path 52. When valve 53 is closed, the discharge of waste liquid stops.

In the example shown in Figure 9, a temperature sensor 54 is provided in the heating circuit 30 between the heat retention section 50 and the heat exchanger 22. The temperature sensor 54 detects the temperature of the treatment liquid flowing through the heating circuit 30 and outputs a measurement result signal indicating the measurement result to the control unit 90.

Here, the control unit 90 controls the discharge of waste liquid from the tank 51 based on the temperature measured by the temperature sensor 54. Figure 10 is a flowchart showing an example of discharge control. First, the temperature sensor 54 measures the temperature of the treatment liquid in the heating circulation path 30 (step S21). The temperature sensor 54 outputs a measurement result signal indicating the measured temperature to the control unit 90.

Next, the control unit 90 determines whether the temperature measured by the temperature sensor 54 is equal to or greater than a predetermined reference temperature value (step S22). If the temperature is lower than the reference temperature value, step S21 is executed again.

When the temperature is equal to or higher than the reference temperature value, the control unit 90 opens the valve 53 (step S23). This causes the waste liquid in the tank 51 to be discharged to the outside through the discharge path 52. As a result, the amount of waste liquid stored in the tank 51 decreases over time. As a result, the amount of heat imparted to the heating circulation path 30 by the heat retention unit 50 decreases, and the temperature of the treatment liquid flowing into the heat exchanger 22 of the heating circulation path 30 decreases.

As described above, this discharge control makes it possible to avoid an excessive increase in the temperature of the treatment liquid flowing into the heat exchanger 22. This makes it possible to suppress a decrease in the utilization rate of the heat pump unit 20.

Fifth Embodiment
11 is a diagram showing an example of the configuration of a substrate processing system 100C according to the fifth embodiment. The substrate processing system 100C differs from the substrate processing system 100B in that a waste liquid cooling unit 55 is provided.

The effluent cooling unit 55 is supplied with high-temperature effluent from the substrate processing apparatus 10. The effluent cooling unit 55 cools the effluent in the low-temperature cooling circuit 40. In the example of Figure 11, the effluent cooling unit 55 is located downstream of the heat retention unit 50 in the flow of effluent. In other words, the downstream end of the discharge path 52 of the heat retention unit 50 is connected to the effluent cooling unit 55, and the effluent is supplied from the heat retention unit 50 to the effluent cooling unit 55 via the discharge path 52.

Figure 12 is a diagram showing a schematic diagram of an example of the configuration of the effluent cooling unit 55. In the example of Figure 12, the effluent cooling unit 55 includes a tank 56. Effluent is supplied to the tank 56. As a result, the tank 56 stores the effluent. In the example of Figure 12, the effluent is supplied to the tank 56 from the heat retention unit 50 through the discharge path 52. As described above, in the heat retention unit 50, heat is transferred from the effluent to the heating circulation path 30, so the temperature of the effluent also drops. Therefore, effluent with a slightly lower temperature is supplied to the effluent cooling unit 55.

A portion of the cooling circuit 40 is immersed in the wastewater in the tank 56. This portion of the cooling circuit 40 is, for example, at least a portion of the cooling circuit 40 that is downstream of both the coolant supply path 41 and the coolant return path 42 and upstream of the heat exchanger 23. Note that if the coolant supply path 44 is connected to the cooling circuit 40, the portion of the cooling circuit 40 that is immersed in the wastewater is, for example, at least a portion of the cooling circuit 40 that is downstream of both the coolant supply path 41, the coolant return path 42, and the coolant supply path 44 and upstream of the heat exchanger 23. In the example shown in FIG. 12 , this portion of the cooling circuit 40 is U-shaped and is immersed in the wastewater in the tank 56. The other portion of the cooling circuit 40 extends outside the tank 56 through the top opening of the tank 56.

In this way, this portion of the cooling circuit 40 is immersed in the high-temperature wastewater in the tank 56, so heat is transferred from the wastewater to this portion of the cooling circuit 40. This cools the wastewater, further lowering its temperature.

The upstream end of a discharge channel 57 is connected to the tank 56. The discharge channel 57 is mainly composed of piping. A valve 58 is provided on the discharge channel 57, and when the valve 58 is opened, the waste liquid in the tank 56 is discharged to the outside through the discharge channel 57. When the valve 58 is closed, the discharge of the waste liquid stops.

The wastewater cooling unit 55 cools the wastewater using the cooling circuit 40, allowing the temperature of the wastewater to be lowered more quickly. This allows the wastewater at a lower temperature to be discharged to the outside through the discharge circuit 57. For example, the control unit 90 may open the valve 58 when the temperature of the wastewater in the tank 56 falls below the allowable temperature.

Figure 13 is a schematic diagram illustrating another example of the configuration of the substrate processing system 100C. In the example of Figure 13, the waste liquid cooling unit 55 cools the waste liquid using a branch path 47 branching off from the cooling circulation path 40. The branch path 47 is mainly composed of piping, and its upstream end is connected to the cooling circulation path 40. As a specific example, the upstream end of the branch path 47 is connected to the cooling circulation path 40 downstream of the upstream ends of the coolant supply path 41 and the coolant return path 42 and upstream of the heat exchanger 23. Note that when the coolant supply path 44 is connected to the cooling circulation path 40, the upstream end of the branch path 47 is connected to the cooling circulation path 40 downstream of the coolant supply path 41, the coolant return path 42, and the coolant supply path 44 and upstream of the heat exchanger 23.

In the example of Figure 13, a portion of the branch path 47 is immersed in the wastewater in the tank 56. In the example of Figure 13, this portion of the branch path 47 has a U-shape and is immersed in the wastewater in the tank 56. The other portion of the branch path 47 extends outside the tank 56 through the top opening of the tank 56.

A valve 471 is provided in the branch path 47. When the valve 471 is opened, a portion of the coolant flows from the cooling circuit 40 through the branch path 47 and is discharged to the outside. Because low-temperature coolant flows through the branch path 47, it is possible to cool the drained liquid in the tank 56.

When the coolant is discharged through the branch path 47, the amount of coolant circulating through the cooling circuit 40 decreases, so it is recommended to provide the coolant replenishment unit 65 shown in Figure 3. This can prevent the amount of coolant circulating from decreasing.

In addition, although the example in Figure 11 shows both a heat retention unit 50 and a waste liquid cooling unit 55, the heat retention unit 50 does not necessarily have to be provided.

As mentioned above, the substrate processing systems 100, 100A-100C have been described in detail. However, the above description is merely an example in all respects, and the substrate processing systems 100, 100A-100C are not limited thereto. It is understood that countless variations not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and variations can be combined or omitted as appropriate, as long as they are not mutually inconsistent.

10, 10A to 10D Substrate processing apparatus 100, 100A to 100C Substrate processing system 118 Discharge path 20 Heat pump device 22 Heat exchanger 30 Heating circulation path 31 Processing liquid supply path 34 Heater 40 Cooling circulation path 41, 44 Cooling liquid supply path 47 Branch path 48 Cooling section 50 Heat retention section 55 Waste liquid cooling section 61 Processing liquid replenishment path 70 Refrigerant concentration sensor 90 Control section W Substrate

Claims (8)

one or more substrate processing devices that supply processing liquids to substrates to process the substrates;
a heat pump device for heating the treatment liquid;
a heating circulation path that returns the treated liquid from the heat pump device to the heat pump device;
a processing liquid supply path branching from the heating circulation path and supplying the processing liquid to the substrate processing apparatus;
a cooling circulation path that returns the cooling liquid cooled by the heat pump device to the heat pump device;
a cooling liquid supply path branching from the cooling circulation path and supplying the cooling liquid to the substrate processing apparatus. 10. The substrate processing system of claim 1,
The substrate processing system further comprises a heater that heats the processing liquid flowing through the processing liquid supply path. 3. The substrate processing system according to claim 2,
The substrate processing system, wherein the heater comprises a heat pump. 4. The substrate processing system according to claim 2, wherein:
The substrate processing system further comprises a control unit that receives information about the substrate and causes the heater to start a heating operation. 3. The substrate processing system according to claim 1,
the heat pump device includes a heat exchanger connected to the heating circuit and made of a thermally conductive resin;
The substrate processing system includes:
The substrate processing system further comprises a coolant concentration sensor for measuring a coolant concentration in the heating circuit. 3. The substrate processing system according to claim 1,
a drainage path through which wastewater from the substrate processing apparatus flows;
The substrate processing system further comprises a heat retention unit that keeps the heating circulation path warm with the waste liquid supplied from the discharge path. 3. The substrate processing system according to claim 1,
The substrate processing system further comprises a cooling unit, located upstream of the cooling liquid supply path and downstream of the heat pump device, for cooling the cooling liquid flowing through the cooling circulation path. 8. The substrate processing system according to claim 7,
a drainage path through which wastewater from the substrate processing apparatus flows;
The substrate processing system further includes an effluent cooling unit that cools the effluent in the cooling circulation path or in a branch path branched from the cooling circulation path.