JP7809532B2 - Exposure method, exposure apparatus, and article manufacturing method - Google Patents

Description

The present invention relates to an exposure method, an exposure apparatus, and a method for manufacturing an article.

In the manufacture of liquid crystal panels, organic EL displays, and other devices, exposure equipment is used to expose a pattern from an original (mask) onto a substrate (glass substrate) coated with a photosensitive agent via a projection optical system. In recent years, demand for large-area panels has increased, and this has led to a corresponding need for larger areas to be exposed by exposure equipment.

Patent Document 1 discloses an exposure method known as stitching exposure, in which adjacent shot areas are exposed so that they partially overlap, making it possible to expose large exposure areas.

JP 2015-12258 A

However, when overlaying an upper layer and an underlayer in stitching exposure, a reduction in throughput due to measuring alignment marks formed on the underlayer can be an issue. For example, when exposing an upper layer with three adjacent shot areas using stitching exposure, it is common to measure each of the alignment marks formed on the underlayer corresponding to each shot area. This allows the amount of misalignment between the pattern on the underlayer and the pattern on the upper layer to be calculated. However, when measuring each of the alignment marks corresponding to each shot area, the measurement unit that measures the alignment marks must be driven to a position where the alignment marks can be measured, which can reduce throughput.

The present invention therefore aims to provide an exposure method that is advantageous in improving throughput in stitching exposure.

In order to achieve the above-mentioned object, an exposure method as one aspect of the present invention is an exposure method for exposing a pattern of an original onto a first shot area of a substrate and a second shot area that overlaps with a portion of the first shot area, the exposure method including: a first measurement step for measuring the position of an alignment mark corresponding to the first shot area; and an exposure step for performing exposure based on the result of measurement in the first measurement step, wherein the alignment mark is a first common alignment mark formed in the area where the first shot area and the second shot area overlap , and the exposure step aligns the first shot area based on position information of the first common alignment mark measured in the first measurement step, and aligns the second shot area using the position information of the first common alignment mark.

The present invention provides an exposure method that is advantageous in improving throughput in stitching exposure.

FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus. FIG. 1 is a diagram showing the arrangement of an alignment scope and an off-axis scope. FIG. 2 is a diagram showing the arrangement of shot areas in the first embodiment. 10 is a flowchart showing a process for determining a shot area in which measurement is omitted. 4 is a flowchart showing the flow of exposure processing in the first embodiment. FIG. 2 is a diagram showing the arrangement of two shot areas. FIG. 10 is a diagram showing an arrangement of four or more shot areas. 10 is a flowchart showing the flow of exposure processing in the second embodiment.

A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings. Note that identical components in each drawing will be designated by the same reference numerals, and duplicate descriptions will be omitted.

First Embodiment
The configuration of an exposure apparatus in this embodiment will be described. The exposure apparatus in this embodiment is an apparatus used in a lithography process when manufacturing devices such as semiconductor devices and flat panel displays (FPDs). The exposure apparatus transfers a pattern of an original (mask) onto a substrate coated with resist, thereby forming a latent image pattern in a shot area of the substrate. The exposure apparatus in this embodiment illuminates the pattern of the original and transfers the pattern of the original to multiple areas on the substrate via a projection optical system. In this embodiment, a step-and-scan exposure apparatus will be described, but the present invention is not limited to this, and other exposure methods such as a step-and-repeat method may also be used.

Figure 1 is a schematic diagram showing the configuration of an exposure apparatus 100 in this embodiment. In this embodiment, the surface on which the substrate 60 is placed is defined as the XY plane, and the direction perpendicular to the XY plane is defined as the Z direction, defining a coordinate system. Furthermore, the scanning direction of the original 30 and substrate 60 is defined as the Y direction, and the direction perpendicular to the Y direction within the XY plane is defined as the X direction, defining a coordinate system.

The exposure apparatus 100 includes an original stage 31 on which the original 30 is placed, a substrate stage 61 on which the substrate 60 is placed, an illumination optical system 10 that illuminates the original 30, and a projection optical system 40 that projects the pattern of the original 30 onto the substrate 60. The exposure apparatus 100 also includes a slit imaging system 20, reflecting mirrors 32, 62, laser interferometers 33, 63, an X-ray shield 50, a control unit 70, an alignment scope 80, and an off-axis scope 81. The original 30 and substrate 60 are positioned at approximately optically conjugate positions (the object plane and image plane of the projection optical system 40) via the projection optical system 40. A slit imaging system 20 that shapes the exposure light is located between the illumination optical system 10 and the original stage 31. Furthermore, when scanning and exposing the substrate 60, an X-ray shielding plate 50 is disposed between the projection optical system 40 and the substrate stage 61. This shielding plate is used to sequentially expose different areas of the substrate 60 with images of the pattern of the original 30 so that they partially overlap (hereinafter referred to as stitching exposure). The X-ray shielding plate 50 serves as a shielding plate for adjusting the amount of exposure in areas that are exposed in an overlapping manner during stitching exposure. The control unit 70 controls the driving of each component of the exposure apparatus 100.

The illumination optical system 10 is composed of a light source such as an ultra-high pressure mercury lamp or LED light source (not shown), a wavelength selection filter, a lens group, a shutter, etc. The illumination optical system 10 irradiates the slit imaging system 20 with light of a wavelength suitable for exposure. The slit imaging system 20 has a slit (not shown) and shapes the incident light from the illumination optical system 10 to an exposure width that satisfies the required exposure amount at a certain stage scanning speed (e.g., the upper limit of the scanning speed).

The master stage 31, which carries the master 30, is scanned in the Y direction by a drive mechanism (not shown). The master stage 31 is equipped with multiple reflecting mirrors 32, which reflect measurement light from a laser interferometer 33 located outside the master stage 31. The laser interferometer 33 receives the reflected measurement light and constantly monitors and measures the position of the master stage 31. The control unit 70 controls the position and speed of the master stage 31 based on the measurement results from the laser interferometer 33.

The projection optical system 40 has mirrors and lenses (not shown) that reflect and refract the exposure light, thereby projecting the pattern formed on the original 30 onto the substrate 60. The mirrors and lenses of the projection optical system 40 are driven in the Z direction and rotational direction by a drive mechanism (not shown), allowing for the desired magnification and shift.

In this embodiment, the exposure apparatus 100 exposes a first image onto shot area S1 (first shot area) on the substrate 60, and exposes a second image onto shot area S2 (second shot area) that overlaps with a portion of shot area S1. Furthermore, a third image is exposed onto shot area S3 (third shot area) that overlaps with a portion of shot area S2. This exposure method of stitching together the areas exposed by the first and second images, and the second and third images, is hereinafter referred to as stitching exposure. The X-ray shielding plate 50 is driven by a drive mechanism (not shown). By driving the X-ray shielding plate 50 horizontally to change the position at which the exposure light is blocked, the exposure light formed by the slit imaging system 20 is blocked obliquely with respect to the scanning direction, thereby controlling the amount of exposure light accumulated in the overlapping exposed areas by stitching exposure.

A substrate stage 61 carrying a substrate 60 is scanned in the X, Y, and Z directions by a drive mechanism (not shown). The substrate stage 61 is equipped with multiple reflecting mirrors 62, which reflect measurement light from a laser interferometer 63 located outside the substrate stage 61. The laser interferometer 63 receives the reflected measurement light and constantly monitors and measures the position of the substrate stage 61. A control unit 70 controls the position and speed of the substrate stage 61 based on the measurement results from the laser interferometer 63.

The alignment scope 80 (measurement unit) measures the alignment marks formed on the substrate 60 via the original 30 and projection optical system 40. On the other hand, the off-axis scope 81 (measurement unit) is positioned below the projection optical system 40 and measures the alignment marks on the substrate 60 without using the original 30 or projection optical system 40. Figure 2 shows the arrangement of the alignment scope 80 and the off-axis scope 81. As shown in Figure 2, the alignment scope 80 and the off-axis scope 81 are positioned so that they can measure each alignment mark corresponding to the shot area on the substrate 60. In this embodiment, a configuration in which alignment marks are measured using the alignment scope 80 and the off-axis scope 81 is described, but alignment marks may also be measured using only the alignment scope 80 or only the off-axis scope 81.

The control unit 70 functions as a processing unit that determines the amount of correction related to exposure alignment in each shot area using the measurement values of the alignment marks measured by the alignment scope 80. The control unit 70 is composed of a data storage unit 71, a drive amount calculation unit 72, and a drive instruction unit 73. The data storage unit 71 stores the X- and Y-axis offsets of one or more points within a shot measured from marks exposed on the substrate by the exposure device. It also stores drive parameters such as drive offsets and sensitivity for various drive axes, various measurement data acquired by the exposure device, the placement coordinates of the shot area on the substrate 60, and the placement coordinates of the alignment marks within the shot area. The drive amount calculation unit 72 calculates various correction components such as X- and Y-axis position offsets, rotation, and magnification using general statistical methods from the data stored in the data storage unit 71. The drive amount calculation unit 72 also determines the drive instruction amount for each axis based on the drive parameters and the calculated correction components. The drive instruction unit 73 outputs drive instructions to each drive mechanism using the drive instruction amount for each drive mechanism determined by the drive amount calculation unit 72. The control unit 70 has a hardware configuration that is, for example, a computer device including a CPU (central processing unit) and memory. In this case, the data storage unit 71 is realized by the memory, and the drive amount calculation unit 72 and drive instruction unit 73 are realized by the CPU.

Next, using Figure 3, the shot areas and alignment marks formed on the substrate 60 in this embodiment will be described. The exposure apparatus 100 performs overlay exposure on the shot areas of the underlying layer formed on the substrate 60. The substrate 60 is formed with shot area S1, which is the overlay destination of the first shot exposure (first exposure), shot area S2, which is the overlay destination of the second shot exposure (second exposure), and shot area S3, which is the overlay destination of the third shot exposure (third exposure). Alignment marks AM1, AM2, AM3, and AM4 corresponding to shot area S1 are formed near the corners of shot area S1. Alignment marks AM3, AM4, AM5, and AM6 corresponding to shot area S2 are formed near the corners of shot area S2. Alignment marks AM5, AM6, AM7, and AM8 corresponding to shot area S3 are formed near the corners of shot area S3. Alignment marks AM3 and AM4 are formed in an area where part of shot area S1 overlaps part of shot area S2. Alignment marks AM5 and AM6 are formed in an area where part of shot area S2 overlaps part of shot area S3. In the example of FIG. 3, shot area S1, shot area S2, and shot area S3 are areas of the same size.

(Exposure method in comparative example)
A comparative example of this embodiment will be described. In order to perform overlay exposure on shot areas formed in an underlayer, position information of alignment marks corresponding to each shot area is measured using an alignment scope 80 and an off-axis scope 81. In this embodiment, it is assumed that the alignment scope 80 and the off-axis scope 81 are placed in positions where the alignment marks of each shot area can be measured simultaneously.

First, alignment of shot area S1 is performed. Alignment marks AM1, AM2, AM3, and AM4 corresponding to shot area S1 are measured using alignment scope 80 and off-axis scope 81, and position information is obtained. At this time, the substrate stage 61 is driven to the measurement position so that alignment marks AM1, AM2, AM3, and AM4 can be measured. The amount of correction related to the alignment of shot area S1 is calculated based on the position information of alignment marks AM1, AM2, AM3, and AM4.

Next, alignment of shot area S2 is performed. Alignment marks AM3, AM4, AM5, and AM6 corresponding to shot area S2 are measured using alignment scope 80 and off-axis scope 81, and position information is obtained. At this time, the substrate stage 61 is driven to the measurement position so that alignment marks AM3, AM4, AM5, and AM6 can be measured. The amount of correction related to the alignment of shot area S2 is calculated based on the position information of alignment marks AM3, AM4, AM5, and AM6.

Next, alignment of shot area S3 is performed. Alignment marks AM5, AM6, AM7, and AM8 corresponding to shot area S3 are measured using alignment scope 80 and off-axis scope 81, and position information is obtained. At this time, the substrate stage 61 is driven to the measurement position so that alignment marks AM5, AM6, AM7, and AM8 can be measured. The amount of correction related to the alignment of shot area S3 is calculated based on the position information of alignment marks AM5, AM6, AM7, and AM8.

Next, based on the calculated correction amounts for shot areas S1, S2, and S3, exposure is performed so that the shot areas are superimposed on the pattern of the underlying layer while adjusting each part of the exposure apparatus 100. Through the above process, stitching exposure can be performed.

When performing stitching exposure, as explained above, it is necessary to drive the substrate 60 from the position where alignment marks AM1, AM2, AM3, and AM4 are measured to the position where alignment marks AM3, AM4, AM5, and AM6 are measured. It is also necessary to drive the substrate 60 from the position where alignment marks AM3, AM4, AM5, and AM6 are measured to the position where alignment marks AM5, AM6, AM7, and AM8 are measured. Measuring the alignment marks corresponding to each shot area to calculate the correction amount for overlapping each shot area can result in reduced throughput.

(Exposure method in this embodiment)
In this embodiment, as in the comparative example, the purpose is to calculate the correction amount for overlapping and exposing each shot area. In this embodiment, by omitting measurement of alignment marks AM3, AM4, AM5, and AM6 corresponding to shot area S2, throughput can be improved compared to the comparative example.

Figure 4 is a flowchart for determining shot areas where alignment mark measurement is omitted. Each step in Figure 4 is executed by the control unit 70 controlling each part of the exposure apparatus 100.

In step S101, the placement coordinates of each alignment mark are calculated from the placement coordinates of shot area S1, shot area S2, and shot area S3 stored in the data storage unit 71 and the placement coordinates of the alignment marks in each shot area. Then, alignment marks formed in areas where shot areas overlap (overlapping areas) are identified as common alignment marks. In this embodiment, alignment marks AM3 and AM4 are identified as common alignment marks for shot areas S1 and S2, and alignment marks AM5 and AM6 are identified as common alignment marks for shot areas S2 and S3.

In step S102, shot areas in which all alignment marks are common between shots are determined as shot areas in which alignment mark measurement can be omitted (determination process). In this embodiment, alignment marks AM3 and AM4 and alignment marks AM5 and AM6 in shot area S2 are identified as common alignment marks with other shot areas. Therefore, shot area S2 is determined as a shot area in which alignment mark measurement can be omitted.

The above process determines the shot area in which alignment mark measurement is omitted. Note that in this embodiment, there is one shot area in which alignment mark measurement is omitted, but as in the example of Figure 7 described below, two or more shot areas in which measurement is omitted may be determined depending on the layout of the shot area.

Next, with reference to Figure 5, the process (exposure process) from when the substrate 60 is loaded into the exposure apparatus 100 until the substrate 60 is unloaded will be described. Figure 5 is a flowchart of the exposure process in this embodiment. Each step in Figure 5 is executed by the control unit 70 controlling each part of the exposure apparatus 100.

In step S201, the alignment mark group (alignment marks AM1-4) corresponding to shot area S1 is measured (first measurement process). In the first measurement process, the alignment mark group (alignment marks AM1-4) corresponding to the first shot area is measured with the relative positional relationship between the measurement unit (alignment scope 80 and off-axis scope 81) and the substrate 60 at a first position. Also, in the first measurement process, each of the alignment marks (alignment marks AM1-4) corresponding to the first shot area is measured in parallel. Measuring in parallel preferably means measuring multiple alignment marks simultaneously, but it is sufficient if at least part of the timing of measuring each alignment mark overlaps.

In step S202, measurement of the alignment mark group (alignment marks AM3-6) corresponding to shot area S2 is omitted, and measurement of the alignment mark group (alignment marks AM5-8) corresponding to shot area S3 is performed (second measurement process). In the second measurement process, the alignment mark group (alignment marks AM5-8) corresponding to the third shot area is measured with the relative positional relationship between the measurement unit (alignment scope 80 and off-axis scope 81) and the substrate 60 at the second position. Also, in the second measurement process, each of the alignment marks (alignment marks AM5-8) corresponding to the third shot area is measured in parallel. Measuring in parallel preferably means measuring multiple alignment marks simultaneously, but it is sufficient if at least part of the timing of measuring each alignment mark overlaps.

In step S203, a calculated value indicating the position information of the alignment mark group (alignment marks AM3-6) corresponding to shot area S2 is calculated, omitting measurement of the alignment marks. The calculated value of the alignment marks corresponding to shot area S2 is calculated based on the position information (first information) of alignment marks AM3 and AM4 measured in S201 and the position information (second information) of alignment marks AM5 and AM6 measured in S202.

In addition, there is a risk that the measurement results of alignment marks AM3 and AM4 when measuring alignment marks AM1-4 will differ from the measurement results of alignment marks AM3 and AM4 when measuring alignment marks AM3-6. This is because driving the substrate stage 61 when measuring both will result in a misalignment amount that depends on errors in stage driving. For this reason, it may be a good idea to store the misalignment amount (third information) between both measurement results that has been measured in advance.

Similarly, the measurement results of alignment marks AM5 and AM6 when measuring alignment marks AM3-6 may differ from the measurement results of alignment marks AM5 and AM6 when measuring alignment marks AM5-8. For this reason, the amount of deviation (fourth information) between the two measurement results measured in advance may be stored. This amount of deviation is also called the calibration amount. The measurement value of the alignment mark corresponding to shot area S2 can be calculated based on the first information, second information, third information, and fourth information.

In step S204, a correction amount for alignment of shot area S1 is calculated based on the position information of the alignment mark group (alignment marks AM1-4) measured in the first measurement process. Furthermore, a correction amount for alignment of shot area S2 in shot area S2 is calculated based on the calculated values of the alignment mark group (alignment marks AM3-6) corresponding to shot area S2 calculated in step S203. Furthermore, a correction amount for alignment of shot area S3 is calculated based on the position information of the alignment mark group (alignment marks AM5-8) measured in the second measurement process. Steps S203 and S204 are also referred to as calculation processes.

In step S205, overlapping exposure of each shot area is performed based on the correction amount calculation results for shot areas S1 to S3 calculated in the calculation process (exposure process). In the exposure process, exposure is performed while controlling the alignment between the original 30 and the substrate 60.

In the exposure process of this embodiment, the measurement results of the alignment mark measured in the first measurement process and used to align shot area S1 are also used to align the second shot area.

(Modification)
While the above example shows stitching exposure of three adjacent shot areas, stitching exposure of two adjacent shot areas is also possible. Figure 6 shows an example of a pattern layout in which shot area S1 and shot area S2 are adjacent. Alignment marks AM3 and AM4 are arranged in the overlapping area of the two adjacent shot areas and are shared alignment marks. Furthermore, shot area S2 is smaller than shot area S1, and the distance between alignment marks AM1 and AM3 is different from the distance between alignment marks AM3 and AM5.

In the example of Figure 6, measurement of the common alignment mark may also be omitted. By omitting measurement of the common alignment mark, throughput can be improved compared to when measurement is not omitted. Here, the distance between the two scopes of alignment scope 80 and the distance between the two scopes of off-axis scope 81 are assumed to be fixed to the distance between alignment marks AM1 and AM3.

We will now explain the case where measurement of common alignment marks is not omitted. First, the substrate 60 is driven to a position where alignment marks AM1-4 can be measured using the alignment scope 80 and off-axis scope 81, and alignment marks AM1-4 corresponding to shot area S1 are measured (first measurement step). Next, the substrate 60 is driven to a position where alignment marks AM3 and AM4 can be measured using the alignment scope 80 and off-axis scope 81, and alignment marks AM3 and AM4 corresponding to shot area S2 are measured. Next, the substrate 60 is driven to a position where alignment marks AM3 and AM4 can be measured using the alignment scope 80 and off-axis scope 81, and alignment marks AM5 and AM6 corresponding to shot area S2 are measured.

In this modified example, by omitting measurement of the common alignment marks, throughput can be improved compared to when measurement of the common alignment marks is not omitted. In this modified example, the amount of correction related to the alignment of shot area S2 is calculated based on the position information of the alignment marks formed in the area where shot area S1 and shot area S2 overlap, among the alignment marks measured in the first measurement process.

In addition, measurement of a common alignment mark may be omitted when connecting exposure of four or more adjacent shot areas. Figure 7 shows an example of a pattern layout in which shot areas S1 to S5 are adjacent. Alignment marks AM3 to AM10 are placed in the overlapping area of two adjacent shot areas and are common alignment marks.

In the example of Figure 6, measurement of the common alignment marks may also be omitted. For example, only the alignment marks corresponding to shot areas S1, S3, and S5 may be measured, and measurement of the alignment marks corresponding to shot areas S2 and S4 may be omitted. This allows for improved throughput compared to when measurement of the common alignment marks is not omitted.

As a result, in this embodiment, the throughput of stitching exposure can be improved by omitting the measurement of common alignment marks.

Second Embodiment
In this embodiment, a form in which it is possible to switch between a first mode in which measurement of a common alignment mark is not omitted and a second mode in which measurement of a common alignment mark is omitted will be described. Note that the configuration of the exposure apparatus 100 is the same as in the first embodiment, and therefore description thereof will be omitted. Furthermore, matters not mentioned in this embodiment will follow the first embodiment.

In this embodiment, it is possible to switch between a first mode, in which measurement of the common alignment mark is not omitted, and a second mode, in which measurement of the common alignment mark is omitted. This allows for improved alignment mark measurement accuracy compared to the first embodiment.

Continuous execution of exposure processes generates heat. The effects of this heat can change the alignment mark measurement results. Thermal deformation of the projection optical system 40 in which the off-axis scope 81 is disposed, or thermal deformation of the support member for the off-axis scope 81, may change the position and orientation of the off-axis scope 81 when measuring the alignment mark. In such cases, by re-measuring the calibration amount described in the first embodiment, it is possible to accurately calculate alignment mark position information even if alignment mark measurement is omitted.

The steps of this embodiment will be described with reference to the pattern layout shown in Figure 3. Figure 8 is a flowchart of the processing in this embodiment. Each step in Figure 8 is performed by the control unit 70 controlling each part of the exposure apparatus 100.

In S301, the alignment mark corresponding to shot area S1 is measured.

In S302, it is determined whether measurement of the alignment mark corresponding to shot area S2 is necessary (determination step). The method for determining whether to measure the alignment mark of shot area S2 is based on at least one of the number of substrates processed, the time, and the amount of energy of the exposure light to the projection optical system 40. If it is determined in S302 that measurement is necessary, the process proceeds to step S303; if it is determined that measurement is not necessary, the process proceeds to step S304.

In the method of determining based on the number of substrates processed, starting from the previous substrate on which the alignment mark corresponding to shot area S2 was measured, if the specified number is not reached, measurement of the alignment mark corresponding to shot area S2 is omitted. Then, when more than the specified number of substrates have been processed, measurement of the alignment mark corresponding to shot area S2 is carried out.

In the time-based determination method, if a specified time has not elapsed since the previous measurement of the alignment mark corresponding to shot area S2, measurement of the alignment mark corresponding to shot area S2 is omitted. Then, once the specified time has elapsed, measurement of the alignment mark corresponding to shot area S2 is performed.

In the method of determining based on the amount of energy of the exposure light, the temperature change of the projection optical system 40 is considered to be due to the exposure energy. If the temperature change from the temperature of the projection optical system 40 when the alignment mark for shot area S2 was measured previously is less than a specified amount, measurement of the alignment mark corresponding to shot area S2 is omitted. If the temperature change exceeds the specified amount, measurement of the alignment mark corresponding to shot area S2 is carried out.

If it is determined in S302 that measurement is necessary, the process proceeds to step S303; if it is determined that measurement is not necessary, the process proceeds to step S304. In step S303, the alignment mark corresponding to shot area S2 is measured.

In step S304, the alignment mark corresponding to shot area S3 is measured.

In step S305, overlapping exposure of each shot area is performed based on the measurement results obtained in the above steps. If it is determined in step S302 that measurement of the alignment mark corresponding to shot area S2 is not necessary, the calculation process of step S203, described in the flowchart of Figure 5 of the first embodiment, is performed before exposure is performed in step S305.

As described above, in this embodiment, it is possible to switch between a first mode in which measurement of the common alignment mark is not omitted, and a second mode in which measurement of the common alignment mark is omitted. This makes it possible to omit measurement processing of the alignment mark corresponding to shot area S2 while maintaining exposure overlay accuracy, even if the measurement results of the off-axis scope 81 change during exposure processing.

<Embodiment of manufacturing method of article>
The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as flat panel displays (FPDs), semiconductor devices, sensors, and optical elements. The method for manufacturing an article according to this embodiment includes a step of forming a latent image pattern on a photosensitive material coated on a substrate by exposure using the above-described exposure apparatus to obtain an exposed substrate (exposure step), and a step of developing the exposed substrate on which the latent image pattern has been formed in this step to obtain a developed substrate (development step). Furthermore, this manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing an article according to this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

The above describes preferred embodiments of the present invention, but it goes without saying that the present invention is not limited to these embodiments, and various modifications and variations are possible within the scope of the invention.

30 Original 60 Substrate 70 Control section 100 Exposure device AM Alignment mark S1 First shot area S2 Second shot area S3 Third shot area

Claims (14)

1. An exposure method for exposing a pattern of an original onto a first shot area of a substrate and a second shot area that overlaps a part of the first shot area, comprising:
a first measurement step of measuring the position of an alignment mark corresponding to the first shot area;
an exposure step of performing exposure based on the result of measurement in the first measurement step,
the alignment mark is a first common alignment mark formed in an area where the first shot area and the second shot area overlap,
An exposure method characterized in that the exposure process aligns the first shot area based on position information of the first common alignment mark measured in the first measurement process, and aligns the second shot area using position information of the first common alignment mark. 1. An exposure method for exposing a pattern of an original onto a first shot area of a substrate and a second shot area that overlaps a part of the first shot area, comprising:
a first measurement step of measuring the position of an alignment mark corresponding to the first shot area;
an exposure step of performing exposure based on the result of measurement in the first measurement step;
a determination step of determining whether to measure an alignment mark corresponding to the second shot area,
an alignment mark used for aligning the first shot area and the second shot area is a first common alignment mark formed in an area where the first shot area and the second shot area overlap,
The exposure step
aligning the first shot area based on position information of the first common alignment mark measured in the first measurement step;
When it is determined in the determining step that the first common alignment mark is to be measured, the second shot area is aligned without using the position information used in aligning the first shot area;
An exposure method characterized in that, if it is determined in the determination process that measurement of the first common alignment mark will not be performed, the second shot area is aligned using the position information used to align the first shot area. 3. The exposure method according to claim 2, wherein the determination step determines whether to measure the alignment mark corresponding to the second shot area based on at least one of the number of substrates processed, time, and the amount of energy of the exposure light. 4. The exposure method according to claim 1 , wherein the exposure step exposes the substrate while controlling alignment between the position of the original and the position of the substrate based on a correction amount related to alignment of a shot area. 5. An exposure method according to claim 1, wherein the first measurement step measures an alignment mark corresponding to the first shot area when the relative positional relationship between a measurement unit that measures the alignment mark in the first measurement step and the substrate is at a first position. 6. The exposure method according to claim 1, wherein the first measurement step measures each alignment mark in a group of alignment marks corresponding to the first shot area in parallel. the exposure method further exposes the pattern of the original to a third shot area that overlaps a part of the second shot area,
a second measurement step of measuring the position of an alignment mark corresponding to the third shot area;
7. The exposure method according to claim 1, wherein the exposure step aligns the second shot area based on position information of the alignment mark measured in the second measurement step, and aligns the second shot area using position information of an alignment mark used to align the first shot area and position information of an alignment mark used to align the third shot area. 8. The exposure method according to claim 7, wherein the alignment mark used to align the second shot area and the third shot area is a second common alignment mark formed in an area where the second shot area and the third shot area overlap. 9. The exposure method according to claim 7, wherein the second measurement process measures a group of alignment marks corresponding to the third shot area in a state where the relative positional relationship between the measurement unit that measures the alignment marks in the second measurement process and the substrate is a second position. 10. The exposure method according to claim 7 , wherein the second measurement step measures each alignment mark in the alignment mark group corresponding to the third shot area in parallel. 11. The exposure method according to claim 1, wherein the first shot area is an area having the same size as the second shot area. 11. The exposure method according to claim 1, wherein the first shot area is an area having a different size from the second shot area. a projection optical system that irradiates light from a light source onto an original and transfers the pattern of the original onto a substrate;
13. An exposure apparatus that exposes the substrate using the exposure method according to claim 1. an exposure step of exposing a substrate using the exposure method according to any one of claims 1 to 12 to obtain an exposed substrate;
a developing step of developing the exposed substrate to obtain a developed substrate,
A method for manufacturing an article, comprising manufacturing an article from the developed substrate.