JP7824838B2 - SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND GAS SUPPLY ASSEMBLY - Google Patents

Description

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a gas supply assembly.

Inductively coupled substrate processing apparatuses are known that supply high-frequency power to an inductively coupled antenna through a metal window installed at the top of a processing chamber, converting the processing gas into plasma through inductive coupling, and then perform plasma processing on a substrate placed on a mounting table inside the processing chamber. In such substrate processing apparatuses, multiple gas holes are provided in the metal window, and processing gas is supplied into the processing chamber through the multiple gas holes.

With each generation of substrate processing equipment, the substrates undergoing plasma processing are becoming larger, and the metal windows facing the substrates are also becoming larger. However, it is difficult to construct such metal windows from a single component. Therefore, it has become common for metal windows to be constructed from multiple metal windows. When a metal window is constructed from multiple segmented windows, it is necessary to separate adjacent segmented windows with an insulator to prevent current induced in each segmented window from flowing across adjacent segments.

In order to improve the uniformity of plasma processing, a substrate processing apparatus has been proposed in which not only are multiple gas holes provided in each partition window, but also a gas diffusion chamber is provided in the cover member that covers the insulator on the substrate side, and multiple gas holes are provided to supply processing gas from the gas diffusion chamber (see, for example, Patent Document 1).

Patent No. 6804392 specification

The technology disclosed herein improves control over the uniformity of plasma processing.

One aspect of the technology according to the present disclosure is a substrate processing apparatus that performs plasma processing on a substrate using plasma of a processing gas, the processing apparatus comprising: a processing vessel having a lower stage for placing the substrate thereon and an upper metal window facing the stage, wherein a processing space is formed between the stage and the metal window; and an inductively coupled antenna facing the stage across the metal window and for generating the plasma in the processing space, wherein the metal window has a plurality of divided windows and insulating portions respectively disposed between adjacent divided windows, and each divided window has a first gas shower structure having a gas hole for supplying the processing gas to the processing space. each insulating part has a second gas shower structure having gas holes for supplying the processing gas to the processing space; a first gas flow path for introducing the processing gas into the first gas shower structure and a second gas flow path for introducing the processing gas into the second gas shower structure are arranged; the second gas flow path is independent from the first gas flow path in a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure; and the second gas flow path has a flow rate adjusting part for adjusting a flow rate of the processing gas flowing through the second gas flow path in a portion downstream of the portion where the second gas flow path is independent from the first gas flow path .

The technology disclosed herein can improve control over the uniformity of plasma processing.

1 is a cross-sectional view schematically illustrating a configuration of a substrate processing apparatus according to an embodiment of the technology disclosed herein. 2 is a view showing a metal window provided in the substrate processing apparatus of FIG. 1 as viewed from the processing space side. FIG. 2 is an enlarged cross-sectional view schematically showing the configuration of a metal window provided in the substrate processing apparatus of FIG. 1. FIG. 4 is an enlarged cross-sectional view showing a detailed configuration of the vicinity of a partition member of the metal window of FIG. 3. FIG. FIG. 4 is an enlarged cross-sectional view schematically showing the configuration of a first modified example of the metal window of FIG. 3. FIG. 4 is an enlarged cross-sectional view schematically showing the configuration of a second modified example of the metal window of FIG. 3. FIG. 5 is an enlarged cross-sectional view showing a detailed configuration of a modification of the partition member shown in FIG. 4 and its vicinity.

In the technology of Patent Document 1 mentioned above, by covering a portion of the partition windows of the metal window with a cover member, process gas is introduced from each gas hole in the partition window into the gas diffusion chamber of the cover member. Therefore, the flow rate of process gas supplied into the process vessel from each gas hole in the cover member is proportional to the flow rate of process gas supplied into the process vessel from each gas hole in the partition window. Furthermore, because the etching rate is affected by the flow rate of the process gas, the etching rate of the region of the substrate facing the insulating portion will be at least loosely proportional to the etching rate of the region facing the partition window.

However, with the technology of Patent Document 1, it is difficult to control the etching rate, for example, by lowering the etching rate in the region facing the insulating portion while increasing the etching rate in the region facing the dividing window, and the controllability of the uniformity of the plasma processing is not very high.

In response to this, the technology disclosed herein eliminates the proportional relationship between the flow rate of the processing gas supplied into the processing vessel from each gas hole in the dividing window and the flow rate of the processing gas supplied into the processing vessel from each gas hole in the cover member, thereby improving controllability over the uniformity of plasma processing.

An embodiment of the technology disclosed herein will now be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically illustrating the configuration of a substrate processing apparatus according to this embodiment, and FIG. 2 is a view showing a metal window provided in the substrate processing apparatus of FIG. 1 as viewed from the processing space side. Also, FIG. 3 is an enlarged cross-sectional view schematically illustrating the configuration of a metal window provided in the substrate processing apparatus of FIG. 1.

The substrate processing apparatus 10 in FIG. 1 is an inductively coupled plasma processing apparatus. The substrate processing apparatus 10 uses plasma generated from a processing gas to perform various plasma processes on a rectangular substrate, such as a glass substrate G (hereinafter referred to as "substrate G") for an FPD (Flat Panel Display). The various plasma processes include film formation processes for forming a metal film, ITO film, oxide film, etc. on the substrate G, etching processes for etching these films formed on the substrate G, and ashing processes for removing a photoresist film covering the metal film or oxide film.

The substrate processing apparatus 10 includes a rectangular cylindrical processing vessel 11 made of a conductive material, such as aluminum or an aluminum-containing alloy whose inner wall surface has been anodized. The processing vessel 11 is electrically grounded. The top of the processing vessel 11 is airtightly sealed by a metal window 12. Inside the processing vessel 11, a mounting table 13 on which a substrate G is placed is located at the bottom, facing the metal window 12. A processing space U is formed in the processing vessel 11 between the mounting table 13 and the metal window 12. In the processing space U, plasma is generated from a processing gas, as described below.

The mounting table 13 is made of a conductive material, such as aluminum with an anodized surface, an aluminum alloy, or stainless steel. An electrostatic chuck (not shown) is provided on the top surface of the mounting table 13, and the substrate G placed on the mounting table 13 is attracted and held to the mounting table 13 by the electrostatic chuck. The mounting table 13 is installed on the bottom surface of the processing vessel 11 via an insulator frame 24.

A metal frame 14 is provided at the upper end of the sidewall of the processing vessel 11, and a sidewall portion 15 is installed on the upper surface of the metal frame 14. The sidewall portion 15 supports a top plate 16 and is electrically grounded, and the top plate 16 covers the metal window 12 from above. A sealing member 17 such as an O-ring is provided between the sidewall of the processing vessel 11 and the metal frame 14 to keep the processing space U airtight. In addition, a load/unload port 18 for loading/unloading the substrate G into/out of the processing space U and a gate valve 19 for opening/closing the load/unload port 18 are provided on the sidewall of the processing vessel 11.

As shown in FIG. 2, the metal window 12 has a rectangular shape and is divided into a plurality of partition windows 22. In this embodiment, the metal window 12 is divided into 24 partition windows 22, but the number of partition windows 22 is not limited to 24 and can be changed depending on the size of the metal window 12. Each partition window 22 is made of, for example, a non-magnetic, conductive metal, aluminum, or an alloy containing aluminum. In the metal window 12, a partition member 23 (insulating portion) made of an insulator is disposed between each adjacent partition window 22. The partition member 23 electrically insulates each adjacent partition window 22 from one another.

The surface of each partition member 23 facing the processing space U is covered by an insulating cover member 25 (insulating portion) to prevent wear due to plasma. The cover member 25 is, for example, an elongated, flat, plate-shaped ceramic member such as alumina, and is composed of a first cover member 25a having gas holes 30 (described below) and a second cover member 25b without gas holes 30. In this embodiment, a portion of the surface of each partition member 23 facing the processing space U is covered by the first cover member 25a, and the other portion of the surface of each partition member 23 facing the processing space U is covered by the second cover member 25b. However, the extent of each partition member 23 covered by each first cover member 25a can be changed depending on the specifications of the substrate processing apparatus 10 and the content of the plasma processing to be performed.

Returning to FIG. 1 , in the substrate processing apparatus 10, the space surrounded by the metal window 12, sidewall 15, and top plate 16 constitutes the antenna chamber 20. An inductive coupling antenna 21 is disposed in the antenna chamber 20 so as to face the mounting table 13 across the metal window 12. The inductive coupling antenna 21 is spaced apart from the metal window 12, for example, via a spacer made of an insulator (not shown). The inductive coupling antenna 21 is disposed across the area facing each partition window 22 and is formed in a spiral shape so as to wrap around the circumferential direction of the metal window 12. The inductive coupling antenna 21 may be a ring-shaped antenna consisting of one or more antenna wires. Multiple inductive coupling antennas 21 may also be provided concentrically. Furthermore, the inductive coupling antenna 21 may be configured such that multiple antenna units are arranged circumferentially around the metal window 12 to form a ring-shaped antenna as a whole. In this case, each antenna unit may be disposed across or without spanning each partition window 22, depending on the processing content.

As shown in Figures 1 and 3, each partition window 22 has multiple gas holes 26 that open toward the processing space U. Note that the inductive coupling antenna 21 and the temperature control flow path 37 (described below) are not shown in Figure 3. A gas supply pipe 28 having a gas supply path 60 is connected to each partition window 22, and the gas supply pipe 28 is connected to a gas supply source 29. The gas supply path 60 constitutes a first gas flow path. A gas diffusion chamber 27 is formed inside each partition window 22, and the gas supply source 29 introduces processing gas into the gas diffusion chamber 27 via the gas supply pipe 28. The introduced processing gas is, for example, gas required for film formation, etching, or ashing. The processing gas introduced into the gas diffusion chamber 27 is supplied to the processing space U through each gas hole 26. Therefore, each partition window 22 has a partition window gas shower structure (first gas shower structure) consisting of each gas hole 26 and gas diffusion chamber 27.

Each first cover member 25a also has multiple gas holes 30 that open toward the processing space U, and a gas diffusion chamber 31 is formed inside each first cover member 25a. A gas supply pipe 32 having a gas supply path 61 is indirectly or directly connected to the gas supply source 29, and the gas supply source 29 introduces processing gas into the gas diffusion chamber 31 via the gas supply path 32. The gas supply path 61 forms part of the second gas flow path. The processing gas introduced into the gas diffusion chamber 31 is supplied to the processing space U through each gas hole 30. Therefore, each first cover member 25a also has a cover member gas shower structure (second gas shower structure) consisting of each gas hole 30 and gas diffusion chamber 31.

Therefore, in the substrate processing apparatus 10, processing gas is supplied not only to the areas facing each partition window 22 in the processing space U, but also to the areas facing each first cover member 25a. This prevents the processing gas from being unevenly distributed in only the areas facing each partition window 22 in the processing space U.

In addition, in the substrate processing apparatus 10, a high-frequency power supply 34 is connected to the inductively coupled antenna 21 via a matching box 33. The high-frequency power supply 34 supplies high-frequency power for generating plasma, for example, 13.56 MHz, to the inductively coupled antenna 21. This induces eddy currents that circulate from the upper surface (the inductively coupled antenna 21 side) to the lower surface (the processing space U side) in each of the divided windows 22 that make up the metal window 12, and these eddy currents form an induced electric field in the processing space U. This induced electric field then excites the processing gas supplied to the processing space U, generating plasma.

Furthermore, a high-frequency power supply 36 is connected to the mounting table 13 via a matching box 35. The high-frequency power supply 36 supplies bias high-frequency power of, for example, 3.2 MHz to the mounting table 13. This allows ions in the plasma in the processing space U to be attracted to the substrate G.

In the substrate processing apparatus 10, each partition window 22 is electrically insulated from the other partition windows 22 by the partition members 23, so that eddy currents are induced individually in each partition window 22 of the metal window 12, and an induced electric field is generated individually in the area facing each partition window 22. Therefore, by changing the size and arrangement of each partition window 22, the distribution of the induced electric field generated in the processing space U can be controlled, thereby locally controlling the degree of plasma processing performed on the substrate G. For example, the distribution of the etching rate on the substrate G can be controlled, or the distribution of the remaining film thickness due to etching of the oxide film formed on the substrate G can be controlled.

In addition, since the degree of plasma processing is also affected by temperature, the substrate processing apparatus 10 has a temperature control flow path 37 formed inside each partition window 22. A cooling medium or heating medium is introduced into the temperature control flow path 37, and each partition window 22 is adjusted to the desired temperature, thereby controlling the degree of plasma processing. To achieve the same function, a temperature control mechanism such as a chiller or a heat transfer gas supply mechanism for controlling the temperature of the substrate G may be provided inside the mounting table 13.

Furthermore, in the substrate processing apparatus 10, an exhaust port 38 is formed in the bottom surface of the processing vessel 11. An exhaust device 39, such as a turbomolecular pump or a dry pump, is connected to this exhaust port 38. When performing plasma processing, the exhaust device 39 maintains the processing space U at a predetermined pressure lower than atmospheric pressure. The substrate processing apparatus 10 is also provided with a control unit 40. The control unit 40 consists of a computer having at least a CPU and memory, and the memory stores a recipe (program) for performing the predetermined plasma processing.

4 is an enlarged cross-sectional view showing the detailed configuration of the partition member 23 and its vicinity in the metal window 12 of FIG. 3. As shown in FIG. 4, the partition member 23 includes a lower partition member 41 located on the processing space U side and an upper partition member 42 (second insulating portion) located on the inductively coupled antenna 21 side. The lower partition member 41 is made of a ceramic material such as alumina, and the upper partition member 42 is made of a fluororesin material such as PTFE (Polytetrafluoroethylene). A seal member 43 is disposed between the partition window 22 and the upper partition member 42. This seals the processing space U from the outside, such as the antenna chamber 20, which is at atmospheric pressure. By constructing the upper partition member 42, which forms part of the partition member 23, from a fluororesin material rather than a ceramic material, not only is the partition member 23 lightweight overall, but it can also accommodate the thermal expansion of the metal partition window 22. As a result, deformation such as twisting of the seal member 43 can be suppressed, thereby maintaining a good seal on the processing space U.

A gas diffusion chamber forming member 44 is positioned between the first cover member 25a and the lower partition member 41. The gas diffusion chamber forming member 44 is made of a ceramic material such as alumina and has an internal space. When combined with the first cover member 25a, it forms the gas diffusion chamber 31. The gas diffusion chamber forming member 44 has a convex upper portion that is inserted into a recess formed in the lower portion of the lower partition member 41, thereby positioning the gas diffusion chamber forming member 44 relative to the lower partition member 41. The lower partition member 41, gas diffusion chamber forming member 44, and first cover member 25a form a first insulating section.

The lower partition member 41 has an insulating gas flow path 45 formed therein. The insulating gas flow path 45 constitutes part of the second gas flow path. The insulating gas flow path 45 opens to the side of the lower partition member 41 and bends downward inside toward the gas diffusion chamber 31. The insulating gas flow path 45 is formed only in the lower partition member 41 and does not contact the upper partition member 42. In other words, the upper partition member 42 is not exposed within the insulating gas flow path 45. This prevents the upper partition member 42, which is made of a fluororesin material, from being deteriorated by the process gas flowing through the insulating gas flow path 45.

In the dividing window 22, connecting members 46 and 47 are disposed between the gas supply pipe 32 and the lower partition member 41. Each connecting member 46 and 47 has internal gas flow paths 48 and 49, which connect the gas supply path 61 to the insulating gas path 45. The gas flow paths 48 and 49 form part of a second gas path. Therefore, the process gas supplied from the gas supply source 29 is introduced into the gas diffusion chamber 31 via the gas supply path 61, the gas paths 48 and 49, and the insulating gas path 45. The gas supply path 61, the gas path 48, the gas path 49, and the insulating gas path 45 form the second gas path. Each connecting member 46 and 47 is made of stainless steel. This prevents the connecting members 46 and 47 from corroding due to the process gas flowing through the gas paths 48 and 49. The connecting members 46 and 47 are inserted into insertion holes machined into the dividing window 22. Here, taking into consideration ease of machining, the insertion hole into which the connecting member 46 is inserted is arranged along the vertical direction of the substrate processing apparatus 10, and the insertion hole into which the connecting member 47 is inserted is arranged along the horizontal direction of the substrate processing apparatus 10. Note that Figure 4 shows a configuration in which the connecting member 46 is inserted from below into an insertion hole that penetrates the dividing window 22 from top to bottom, and the insertion hole is then closed with an insertion hole cover 55, but it is also possible to insert the connecting member 46 from above into an insertion hole that is closed on the bottom, without providing an insertion hole cover 55.

As described above, in the first insulating section, the lower partition member 41, gas diffusion chamber forming member 44, and first cover member 25a are all made of ceramic materials. This ensures plasma resistance, and even if plasma enters the gas diffusion chamber 31 or insulating section gas flow path 45 from the processing space U, the lower partition member 41, gas diffusion chamber forming member 44, and first cover member 25a can be prevented from being worn down by the plasma.

In addition, in the first insulating section, a flow rate adjustment block 50 (flow rate adjustment section) is disposed at the end of the insulating section gas flow path 45, where it connects to the gas diffusion chamber 31. The flow rate adjustment block 50 is formed with a throttle hole 51 that connects the insulating section gas flow path 45 to the gas diffusion chamber 31. The flow rate adjustment block 50 is configured to be able to fit into a recess formed at the end of the insulating section gas flow path 45 in the lower part of the lower partition member 41. The cross-sectional area of the throttle hole 51 (the cross-sectional area of a cross section perpendicular to the axial direction of the throttle hole 51; the same applies below) is smaller than the cross-sectional area of the gas supply path 61, the cross-sectional area of the gas flow paths 48 and 49, and the cross-sectional area of the insulating section gas flow path 45. Therefore, the flow rate adjustment block 50 functions as an orifice, and the flow rate of the process gas introduced into the gas diffusion chamber 31 depends on the cross-sectional area of the throttle hole 51 in the flow rate adjustment block 50.

In this embodiment, several types of flow control blocks 50 with different cross-sectional areas of the throttle holes 51 are prepared. The flow rate of the process gas introduced into the gas diffusion chamber 31 can be changed by switching the flow control block 50 fitted into the recess at the end of the insulating gas flow path 45. Furthermore, when the flow control block 50 is fitted into the recess at the end of the insulating gas flow path 45, the flow control block 50 is positioned at the center of the gas diffusion chamber 31, and the throttle holes 51 open at the center of the gas diffusion chamber 31. This allows the second gas flow path to be connected to the gas diffusion chamber 31 at its center. Furthermore, the flow control block 50 can be easily replaced from below by removing the gas diffusion chamber-forming member 44 and the first cover member 25a. Therefore, the flow rate of the process gas introduced into the gas diffusion chamber 31 can be easily adjusted with a structure much simpler than a configuration using a flow control device (e.g., a mass flow controller) to control the flow rate. In this embodiment, the "center of the gas diffusion chamber 31" may also include the vicinity of the center of the gas diffusion chamber 31. The same applies below.

As described above, in the substrate processing apparatus 10, each partition window 22 of the metal window 12 has a partition window gas shower structure, and each partition member 23 of the metal window 12 has a cover member gas shower structure, and each partition window 22 and each partition member 23 cooperate with the gas supply pipes 28, 32 to supply processing gas to the processing space U. Therefore, each partition window 22 and each partition member 23 constitutes a gas supply assembly. Note that the open circles in Figure 4 indicate cross sections of sealing members, and each sealing member seals minute gaps between each component member near the partition member 23.

Returning to FIG. 1 , the gas supply pipe 32 branches off from the gas supply pipe 28 between the gas supply source 29 and the dividing window 22. Therefore, the gas supply pipe 32 is independent of the gas supply pipe 28 at a portion upstream (toward the gas supply source 29) of the portion where the gas supply pipe 28 connects to the dividing window 22, which has a gas shower structure consisting of the gas holes 26 and the gas diffusion chamber 27. As described above, the flow rate of the process gas introduced into the gas diffusion chamber 31, which communicates with the gas supply pipe 32, can be changed by replacing the flow rate adjustment block 50 located in the second gas flow path downstream of the portion where the gas supply pipe 32 separates from the gas supply pipe 28. In other words, the distribution ratio between the flow rate of the process gas introduced into the gas diffusion chamber 27 via the gas supply pipe 28 and the flow rate of the process gas introduced into the gas diffusion chamber 31 via the gas supply pipe 32 can be changed by replacing the flow rate adjustment block 50. This eliminates the proportional relationship between the flow rate of the processing gas supplied to the processing space U from each gas hole 26 in the dividing window 22 and the flow rate of the processing gas supplied to the processing space U from each gas hole 30 in the first cover member 25a.

For example, by fitting a flow rate adjustment block 50 with a small cross-sectional area of the throttle hole 51 into the recess at the end of the insulating gas flow path 45, the flow rate of the process gas introduced into the gas diffusion chamber 31 can be reduced and the flow rate of the process gas introduced into the gas diffusion chamber 27 can be increased. This makes it possible to increase the process gas concentration in the areas of the processing space U facing each dividing window 22 compared to the process gas concentration in the areas facing each first cover member 25a. As a result, the etching rate and film formation amount in the areas of the substrate G facing each first cover member 25a can be reduced, while the etching rate and film formation amount in the areas facing each dividing window 22 can be increased.

Furthermore, by fitting a flow rate adjustment block 50 with a large cross-sectional area of the throttle hole 51 into the recess at the end of the insulating gas flow path 45, the flow rate of the process gas introduced into the gas diffusion chamber 31 can be increased and the flow rate of the process gas introduced into the gas diffusion chamber 27 can be reduced. This makes it possible to lower the process gas concentration in the areas of the processing space U facing each dividing window 22 compared to the process gas concentration in the areas facing each first cover member 25a. As a result, the etching rate and film formation amount in the areas of the substrate G facing each first cover member 25a can be increased, while the etching rate and film formation amount in the areas facing each dividing window 22 can be reduced.

In other words, the substrate processing apparatus 10 according to this embodiment can improve the controllability of the uniformity of the plasma processing performed on the substrate G.

Furthermore, in the substrate processing apparatus 10, as described above, the throttle hole 51 of the flow rate adjustment block 50 opens in the center of the gas diffusion chamber 31. This allows the processing gas to diffuse almost evenly in the gas diffusion chamber 31, and the processing gas is supplied evenly from each gas hole 30 to the processing space U. As a result, it is possible to prevent unevenness in the degree of plasma processing in the areas facing each first cover member 25a.

The above describes preferred embodiments of the present disclosure, but the present disclosure is not limited to the above-described embodiments, and various modifications and variations are possible within the scope of its essence.

For example, the partition member 23 is composed of two members, a lower partition member 41 and an upper partition member 42, but it may also be composed of a single member.

The flow rate adjustment block 50 is located at the end of the insulating gas flow path 45 formed in the lower partition member 41 of the partition member 23, but it may also be located in the second gas flow path from the gas supply pipe 32 to the gas diffusion chamber 31. For example, as shown in FIG. 5, it may be located in the gas supply path 61 of the gas supply pipe 32. In this case, however, it is necessary to ensure ease of replacement of the flow rate adjustment block 50.

Furthermore, although part of the gas flow path from the gas supply pipe 32 to the gas diffusion chamber 31 passes through the partition member 23 (lower partition member 41), as shown in FIG. 6, a gas flow path 52 extending from the gas supply pipe 32 to the gas diffusion chamber 31 may be formed in the dividing window 22. In this case, the flow rate adjustment block 50 is fitted into a recess at the end of the gas flow path 52 formed in the lower part of the dividing window 22 so that the throttle hole 51 communicates with the upstream part of the gas flow path 52, but the recess at the end of the gas flow path 52 in the lower part of the dividing window 22 is formed so that the fitted flow rate adjustment block 50 is positioned in the center of the gas diffusion chamber 31. In this case, no gas flow path is formed in the dividing member 23.

In addition, the gas supply pipe 32 branches off from the gas supply pipe 28 between the gas supply source 29 and the dividing window 22. However, the gas supply pipe 32 may be connected directly to the gas supply source 29 without branching off from the gas supply pipe 28. In this case, if the gas supply source 29 can adjust the flow rate of the process gas flowing through each of the gas supply pipes 28 and 32, the flow rate adjustment block 50 can be eliminated. Furthermore, when the gas supply pipe 32 is connected to the gas supply source 29, the gas supply pipe 28 may branch off from the gas supply pipe 32 between the gas supply source 29 and the dividing window 22. In this case, the flow rate adjustment block 50 is also disposed in the second gas flow path downstream of the branch point of the gas supply pipe 28 and the gas supply pipe 32.

Furthermore, in the substrate processing apparatus 10, two connecting members, namely, connecting members 46 and 47, are arranged between the gas supply pipe 32 and the lower partition member 41. However, for example, as shown in FIG. 7, an oblique insertion hole extending from the gas supply pipe 32 to the lower partition member 41 may be provided in the dividing window 22, and a single connecting member 53 may be inserted into the insertion hole. This connecting member 53 has a gas flow path 54 that connects the gas supply pipe 32 and the insulating gas flow path 45. This allows the number of connecting members to be reduced.

Furthermore, the substrate G that undergoes plasma processing in the substrate processing apparatus 10 is a liquid crystal display, an electroluminescence display, a plasma display panel, or the like. However, the substrate that undergoes plasma processing in the substrate processing apparatus 10 is not limited to a glass substrate for an FPD. For example, the substrate may be a substrate for a solar panel or a silicon wafer for a semiconductor device.

G substrate U processing space 10 substrate processing apparatus 11 processing container 12 metal window 13 mounting table 21 inductively coupled antenna 22 dividing window 23 partition member 25 cover member 26, 30 gas holes 28, 32 gas supply pipe 45 insulating gas flow paths 48, 49 gas flow paths 60, 61 gas supply path

Claims (9)

A substrate processing apparatus that performs plasma processing on a substrate using plasma of a processing gas, comprising:
a processing vessel having a lower portion thereof provided with a mounting table for mounting the substrate thereon and an upper portion thereof provided with a metal window facing the mounting table, wherein a processing space is formed between the mounting table and the metal window;
an inductively coupled antenna facing the mounting table across the metal window, for generating the plasma in the processing space;
the metal window has a plurality of partitioned windows and insulating portions disposed between adjacent partitioned windows,
each of the dividing windows has a first gas shower structure having a gas hole for supplying the processing gas to the processing space;
each insulating portion has a second gas shower structure having a gas hole for supplying the processing gas to the processing space;
a first gas flow path for introducing the process gas into the first gas shower structure, and a second gas flow path for introducing the process gas into the second gas shower structure;
the second gas flow path is independent from the first gas flow path at a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure ;
the second gas flow path has a flow rate adjusting unit that adjusts a flow rate of the processing gas flowing through the second gas flow path, at a portion downstream of a portion independent from the first gas flow path . The substrate processing apparatus according to claim 1 , wherein the flow rate adjusting unit is replaceably disposed at an end of the second gas flow path . The substrate processing apparatus of claim 1, wherein the second gas flow path branches off from the first gas flow path between the processing gas supply source and the dividing window. the insulating portion includes a first insulating portion disposed on the processing space side and a second insulating portion disposed on the inductively coupled antenna side,
the first insulating portion has the second gas shower structure,
The substrate processing apparatus according to claim 1 , wherein at least a portion of the second gas flow path is formed in the first insulating portion. The substrate processing apparatus of claim 4, wherein in the first insulating portion, at least a portion of the second gas flow path is bent toward the second gas shower structure and does not contact the second insulating portion. the first insulating portion has a gas diffusion chamber communicating with each of the gas holes of the second gas shower structure;
The substrate processing apparatus according to claim 4 , wherein the second gas flow path is connected to the gas diffusion chamber at a center of the gas diffusion chamber. The substrate processing apparatus of claim 4, wherein the first insulating portion is made of a material different from the material constituting the second insulating portion. 1. A substrate processing method for performing plasma processing on a substrate using plasma of a processing gas in a substrate processing apparatus, comprising:
the substrate processing apparatus includes a processing vessel having a lower portion thereof provided with a mounting table for mounting the substrate thereon and an upper portion thereof provided with a metal window facing the mounting table, wherein a processing space is formed between the mounting table and the metal window; and an inductively coupled antenna facing the mounting table across the metal window, for generating the plasma in the processing space;
the metal window has a plurality of partitioned windows and insulating portions disposed between adjacent partitioned windows,
each of the dividing windows has a first gas shower structure having a gas hole for supplying the processing gas to the processing space;
each insulating portion has a second gas shower structure having a gas hole for supplying the processing gas to the processing space;
a first gas flow path for introducing the process gas into the first gas shower structure and a second gas flow path for introducing the process gas into the second gas shower structure, the second gas flow path being independent from the first gas flow path in a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure;
the second gas flow path has a flow rate adjusting unit that adjusts a flow rate of the processing gas flowing through the second gas flow path, in a portion downstream of a portion independent from the first gas flow path;
carrying the substrate into the processing chamber and placing it on the stage;
supplying the processing gas into the processing space from each of the first gas shower structure and the second gas shower structure;
generating the plasma from the process gas by the inductively coupled antenna;
and performing a plasma process on the substrate using the plasma. a gas delivery assembly positioned between the inductively coupled antenna and a substrate to be plasma processed, the gas delivery assembly comprising:
a metal window having a plurality of partitioned windows and an insulating portion disposed between each of the partitioned windows adjacent to each other;
each of the partition windows has a first gas shower structure having a gas hole for supplying a processing gas toward a processing space between the substrate and the metal window;
each insulating portion has a second gas shower structure having a gas hole for supplying the processing gas toward the processing space;
a second gas flow path for introducing the process gas into the second gas shower structure is independent from a first gas flow path for introducing the process gas into the first gas shower structure at a portion upstream of a portion where the first gas flow path is connected to the first gas shower structure ;
The second gas flow path has a flow rate adjusting portion that adjusts the flow rate of the process gas flowing through the second gas flow path at a portion downstream from a portion independent from the first gas flow path .