JP7828350B2 - R-t-b磁石及びその製造方法 - Google Patents
R-t-b磁石及びその製造方法Info
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- JP7828350B2 JP7828350B2 JP2023544211A JP2023544211A JP7828350B2 JP 7828350 B2 JP7828350 B2 JP 7828350B2 JP 2023544211 A JP2023544211 A JP 2023544211A JP 2023544211 A JP2023544211 A JP 2023544211A JP 7828350 B2 JP7828350 B2 JP 7828350B2
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Description
前記Nd≧22wt.%、
Ti+Nb:0.2~0.75wt.%、
Cu:0.05~0.45wt.%、
B:0.955~1.15wt.%、
Fe:58~69wt.%、wt.%は、各成分の質量と各成分の総質量との比であり、前記Tiと前記Nbとの質量比は、(1~5):1である。
前記時効処理は、1段目時効処理及び2段目時効処理を含み、
前記冷却処理の速度は、20℃/min以上である。
実施例1
効果実施例1
R-T-B磁石の成分及び含有量(wt.%)
備考:/は、当該元素が含まれていないことを示す。上記の各実施例及び比較例のR-T-B磁石にはGa及びZrが検出されず、最終製品のR-T-B磁石は、製造中にC、O、Mn及びAlが不可避的に導入され、各実施例及び比較例に記載された含有量百分率は、これらの不純物を含まない。
2、磁気特性試験
3、ミクロ構造の試験
備考:/は、当該物相が形成されないことを意味する。
Claims (10)
- R-T-B磁石であって、
各成分総質量で占める百分率をwt.%として、下記の成分を含み、
R:≧29wt.%、前記Rは、希土類元素であり、前記Rは、Ndを含み、
前記Nd≧22wt.%、
Ti+Nb:0.2~0.75wt.%、
Cu:0.05~0.45wt.%、
B:0.955~1.15wt.%、
Fe:58~69wt.%、
前記Tiと前記Nbとの質量比は、(1~5):1であり、
前記Rは重希土類元素であるRHを含み、前記RHの含有量は、2.5wt.%以下であるが、0ではなく、前記RHは、Tbを含み、
前記R-T-B磁石は、TixNb1相を含み、前記Xは、3~5であり、前記TixNb1相は、Ndリッチ相と主相粒子との間に位置し、前記TixNb1相の面積と主相粒子の総面積との比は、1~2%である、
ことを特徴とするR-T-B磁石。 - 前記Rの含有量は、30~32wt.%であり、
前記Ndの含有量は、25~31wt.%であり、
前記RはPrを含む場合があり、前記Prの含有量は、0.3wt.%以下であり、
前記Tbの含有量は、0.5~1.4wt.%であり、
前記RHはDyを含む場合があり、前記RHがDyを含む場合、前記Dyの含有量は、0.5~2wt.%であり、
前記RHの原子百分率含有量と前記Rの原子百分率含有量との比は、0.1以下である、
ことを特徴とする請求項1に記載のR-T-B磁石。 - 前記Ti+Nbの含有量は、0.22~0.7wt.%であり、
前記Tiと前記Nbとの質量比は、(1.2~4.8):1であり、
前記Tiの含有量は、0.12~0.56wt.%であり、
前記Nbの含有量は、0.08~0.14wt.%である、
ことを特徴とする請求項1に記載のR-T-B磁石。 - 前記Cuの含有量は、0.06~0.39wt.%であり、
前記Bの含有量は、0.98~1.1wt.%であり、
前記Bの原子百分率含有量と前記R-T-B磁石内のRの原子百分率含有量との比は、0.38以上であり、
前記Feの含有量は、65~69wt.%であり、
前記R-T-B磁石は、Coをさらに含み、
前記Coの含有量は、1.2wt.%以下である、
ことを特徴とする請求項1に記載のR-T-B磁石。 - 前記TixNb1相の面積と主相粒子の総面積との比は、1.3%、1.4%、1.5%、1.6%又は1.7%である、
ことを特徴とする請求項1~4のいずれか1項に記載のR-T-B磁石。 - 前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.64wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.40%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.38wt.%のCu、0.3wt.%のTi、0.08wt.%のNb、0.99wt.%のB及び67.55wt.%のFeの成分を含み、前記R-T-B磁石は、Ti4Nb1相を含み、前記Ti4Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti4Nb1相の面積と主相粒子の総面積との比は、1.40%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.39wt.%のCu、0.48wt.%のTi、0.11wt.%のNb、0.99wt.%のB及び67.33wt.%のFeの成分を含み、前記R-T-B磁石は、Ti5Nb1相を含み、前記Ti5Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti5Nb1相の面積と主相粒子の総面積との比は、1.70%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.36wt.%のCu、0.56wt.%のTi、0.14wt.%のNb、0.99wt.%のB及び67.25wt.%のFeの成分を含み、前記R-T-B磁石は、Ti5Nb1相を含み、前記Ti5Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti5Nb1相の面積と主相粒子の総面積との比は、1.80%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.39wt.%のCu、0.12wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.7wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.3%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.34wt.%のCu、0.25wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.62wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.39wt.%のCu、0.35wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.47wt.%のFeの成分を含み、前記R-T-B磁石は、Ti4Nb1相を含み、前記Ti4Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti4Nb1相の面積と主相粒子の総面積との比は、1.6%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.31wt.%のCu、0.48wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.42wt.%のFeの成分を含み、前記R-T-B磁石は、Ti5Nb1相を含み、前記Ti5Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti5Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.5wt.%のNd、1.1wt.%のTb、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.74wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.4%であり、
又は、前記R-T-B磁石は、30.4wt.%のNd、0.8wt.%のTb、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.14wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.5wt.%のNd、0.5wt.%のTb、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び68.34wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.3%であり、
又は、前記R-T-B磁石は、28.5wt.%のNd、0.6wt.%のTb、1.6wt.%のDy、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.64wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.2wt.%のNd、1wt.%のTb、0.5wt.%のDy、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.64wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.4%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.39wt.%のCu、0.5wt.%のCo、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.14wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.39wt.%のCu、1wt.%のCo、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び66.64wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.35wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.68wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.15wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.88wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%であり、
又は、前記R-T-B磁石は、29.3wt.%のNd、1.4wt.%のTb、0.06wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.97wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.3%であり、
又は、前記R-T-B磁石は、29.1wt.%のNd、0.2wt.%のPr、1.4wt.%のTb、0.39wt.%のCu、0.18wt.%のTi、0.1wt.%のNb、0.99wt.%のB及び67.64wt.%のFeの成分を含み、前記R-T-B磁石は、Ti3Nb1相を含み、前記Ti3Nb1相は、Ndリッチ相と主相粒子との間に位置し、前記Ti3Nb1相の面積と主相粒子の総面積との比は、1.5%である、
ことを特徴とする請求項1に記載のR-T-B磁石。 - R-T-B磁石の製造方法であって、
請求項1~4及び6のいずれか1項に記載のR-T-B磁石の各成分の原料混合物に対して時効処理を行った後、冷却処理を行うステップを含み、
前記時効処理は、1段目時効処理及び2段目時効処理を含み、
前記冷却処理の速度は、20℃/min以上である、
ことを特徴とするR-T-B磁石の製造方法。 - 前記1段目時効処理の温度は、860~920℃であり、
前記1段目時効処理の時間は、2.5~4hであり、
前記2段目時効処理の温度は、460~530℃であり、
前記2段目時効処理の時間は、2.5~4hであり、
前記冷却処理の速度は、20~40℃/minである、
ことを特徴とする請求項7に記載のR-T-B磁石の製造方法。 - 前記時効処理の前に、溶解製錬、鋳造、水素破砕、微粉砕、磁場成形及び焼結処理をさらに含み、
前記溶解製錬の真空度は、5×10-2Paであり、
前記溶解製錬の温度は、1550℃以下であり、
前記鋳造の温度は、1390~1460℃であり、
前記鋳造後に得られた合金鋳片の厚さは、0.25~0.40mmであり、
前記水素破砕の工程は、水素吸収、脱水素、冷却処理の順に行われ、前記水素吸収は、0.085MPaの水素圧力の条件下で行われ、前記脱水素は、真空引きしながら昇温する条件下で行われ、前記脱水素の温度は、480~520℃であり、
前記微粉砕は、ジェットミル粉砕であり、
前記磁場成形は、1.8T以上の磁場強度及び窒素雰囲気の保護下で行われ、
前記焼結処理の温度は、1000~1100℃であり、
前記焼結処理の時間は、4~8hであり、
前記R-T-B磁石に重希土類元素が含まれる場合、前記冷却処理の後に粒界拡散処理をさらに含み、
前記粒界拡散処理の温度は、800~900℃であり、
前記粒界拡散の時間は、5~10hであり、
前記R-T-B磁石内の重希土類元素の添加方式は、0~80%の重希土類元素を溶解製錬時に添加し、且つ残りの重希土類元素を粒界拡散時に添加する方式を採用し、前記R-T-B磁石内の重希土類元素がTbであり、且つTbが0.5wt.%より大きい場合、25~50%のTbを溶解製錬時に添加し、残部を粒界拡散時に添加し、又は、前記R-T-B磁石内の重希土類元素がTb及びDyである場合、前記Tbを溶解製錬時に添加し、前記Dyを粒界拡散時に添加し、又は、前記R-T-B磁石内の重希土類元素がTbであり、且つTbが0.5wt.%以下である場合、前記R-T-B磁石内の重希土類元素を粒界拡散時に添加する、
ことを特徴とする請求項7に記載のR-T-B磁石の製造方法。 - 請求項7に記載のR-T-B磁石の製造方法によって製造された、
ことを特徴とするR-T-B磁石。
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