JPS5352383A - Electrode formation method - Google Patents
Electrode formation methodInfo
- Publication number
- JPS5352383A JPS5352383A JP12722176A JP12722176A JPS5352383A JP S5352383 A JPS5352383 A JP S5352383A JP 12722176 A JP12722176 A JP 12722176A JP 12722176 A JP12722176 A JP 12722176A JP S5352383 A JPS5352383 A JP S5352383A
- Authority
- JP
- Japan
- Prior art keywords
- formation method
- electrode formation
- phosphoric acid
- inhibited
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: The formation of phosphoric acid is inhibited and the disconnection owing to corrosion by phosphoric acid is prevented by cutting off the surface of phosphorus-contained glass from the outside air with a silicon nitride or other vapor deposited insulation film and electrode metal layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12722176A JPS5352383A (en) | 1976-10-25 | 1976-10-25 | Electrode formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12722176A JPS5352383A (en) | 1976-10-25 | 1976-10-25 | Electrode formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5352383A true JPS5352383A (en) | 1978-05-12 |
Family
ID=14954711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12722176A Pending JPS5352383A (en) | 1976-10-25 | 1976-10-25 | Electrode formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5352383A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56105640A (en) * | 1980-01-28 | 1981-08-22 | Nec Corp | Semiconductor device |
| JPS56110240A (en) * | 1980-02-06 | 1981-09-01 | Nec Corp | Semiconductor device |
| JPS57169260A (en) * | 1981-04-09 | 1982-10-18 | Nec Corp | Semiconductor device and its manufacture |
| JPS5850755A (en) * | 1981-09-21 | 1983-03-25 | Nippon Denso Co Ltd | Semiconductor device |
| JPS5976447A (en) * | 1982-10-26 | 1984-05-01 | Oki Electric Ind Co Ltd | Multi-layer wiring method |
-
1976
- 1976-10-25 JP JP12722176A patent/JPS5352383A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56105640A (en) * | 1980-01-28 | 1981-08-22 | Nec Corp | Semiconductor device |
| JPS56110240A (en) * | 1980-02-06 | 1981-09-01 | Nec Corp | Semiconductor device |
| JPS57169260A (en) * | 1981-04-09 | 1982-10-18 | Nec Corp | Semiconductor device and its manufacture |
| JPS5850755A (en) * | 1981-09-21 | 1983-03-25 | Nippon Denso Co Ltd | Semiconductor device |
| JPS5976447A (en) * | 1982-10-26 | 1984-05-01 | Oki Electric Ind Co Ltd | Multi-layer wiring method |
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