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JPS5420671A - Production of semiconductor devices - Google Patents
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JPS5420671A - Production of semiconductor devices - Google Patents

Production of semiconductor devices

Info

Publication number
JPS5420671A
JPS5420671A JP8513977A JP8513977A JPS5420671A JP S5420671 A JPS5420671 A JP S5420671A JP 8513977 A JP8513977 A JP 8513977A JP 8513977 A JP8513977 A JP 8513977A JP S5420671 A JPS5420671 A JP S5420671A
Authority
JP
Japan
Prior art keywords
production
semiconductor devices
covering
treatment
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8513977A
Other languages
Japanese (ja)
Other versions
JPS5933255B2 (en
Inventor
Koichiro Kishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52085139A priority Critical patent/JPS5933255B2/en
Publication of JPS5420671A publication Critical patent/JPS5420671A/en
Publication of JPS5933255B2 publication Critical patent/JPS5933255B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To stabilize surface condition by covering a getter type oxide film directly on a Si substrate or laminating the same with an oxide film and covering with a Si3N4 film after performing high temperature H2 treatment, and heat treating in N2 after H2 treatment.
COPYRIGHT: (C)1979,JPO&Japio
JP52085139A 1977-07-18 1977-07-18 Manufacturing method of semiconductor device Expired JPS5933255B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52085139A JPS5933255B2 (en) 1977-07-18 1977-07-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52085139A JPS5933255B2 (en) 1977-07-18 1977-07-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5420671A true JPS5420671A (en) 1979-02-16
JPS5933255B2 JPS5933255B2 (en) 1984-08-14

Family

ID=13850315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52085139A Expired JPS5933255B2 (en) 1977-07-18 1977-07-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5933255B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667103A (en) * 1979-11-07 1981-06-06 Matsushita Electric Industrial Co Ltd High molecular temperature sensor
JPS5797678A (en) * 1980-12-10 1982-06-17 Ibm Method of producing insulated gate type field effect transistor
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
JPH02294034A (en) * 1989-05-08 1990-12-05 Nec Kyushu Ltd Manufacture of semiconductor integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667103A (en) * 1979-11-07 1981-06-06 Matsushita Electric Industrial Co Ltd High molecular temperature sensor
JPS5797678A (en) * 1980-12-10 1982-06-17 Ibm Method of producing insulated gate type field effect transistor
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4837172A (en) * 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
JPH02294034A (en) * 1989-05-08 1990-12-05 Nec Kyushu Ltd Manufacture of semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS5933255B2 (en) 1984-08-14

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