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JPS5473585A - Gate turn-off thyristor - Google Patents
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JPS5473585A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5473585A
JPS5473585A JP14061977A JP14061977A JPS5473585A JP S5473585 A JPS5473585 A JP S5473585A JP 14061977 A JP14061977 A JP 14061977A JP 14061977 A JP14061977 A JP 14061977A JP S5473585 A JPS5473585 A JP S5473585A
Authority
JP
Japan
Prior art keywords
regions
impurity
type
selectively
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14061977A
Other languages
Japanese (ja)
Inventor
Kazumichi Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14061977A priority Critical patent/JPS5473585A/en
Publication of JPS5473585A publication Critical patent/JPS5473585A/en
Pending legal-status Critical Current

Links

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  • Thyristors (AREA)

Abstract

PURPOSE: To make possible turn-off of large current without decreasing the dielectric strength of cathode junctions by incorporating reverse parallel diodes within substrate and selectively providing impurity high concentration regions through an ordinary impurity doping process.
CONSTITUTION: After P type base regions are formed on the surface of an n type silicon substrate by diffusing an impurity with B, Ga, Al, etc., the impurity surface layer on one side of the substrate is removed by etching or polishing to selectively form P type high concentration regions 20. Next, a P type base region 21 is formed by an epitaxial method, following to which an n+ type impurity is selectively diffused to provide emitter regions 24, auxiliary thyristor regions 23 and gate regions 22. Diode regions 35 are formed by the n+ type impurity layer shortcircuited and connected to the gate regions 32 and the regions 36 of a high impurity concentration of the same conductivity type as that of the base regions 31 are selectively formed under the diode regions 35 and emitter regions 34.
COPYRIGHT: (C)1979,JPO&Japio
JP14061977A 1977-11-25 1977-11-25 Gate turn-off thyristor Pending JPS5473585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14061977A JPS5473585A (en) 1977-11-25 1977-11-25 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14061977A JPS5473585A (en) 1977-11-25 1977-11-25 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5473585A true JPS5473585A (en) 1979-06-12

Family

ID=15272910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14061977A Pending JPS5473585A (en) 1977-11-25 1977-11-25 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5473585A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
JPS59217366A (en) * 1983-05-26 1984-12-07 Toshiba Corp Semiconductor device
JPS60106170A (en) * 1983-11-15 1985-06-11 Toshiba Corp Thyristor with overvoltage protective function
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
US4553151A (en) * 1982-09-23 1985-11-12 Eaton Corporation Bidirectional power FET with field shaping
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
US5001537A (en) * 1987-06-09 1991-03-19 Texas Instruments Incorporated Semiconductor device for electrical overstress protection

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
US4574296A (en) * 1982-08-05 1986-03-04 Kabushiki Kaisha Meidensha Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
US4553151A (en) * 1982-09-23 1985-11-12 Eaton Corporation Bidirectional power FET with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
JPS59217366A (en) * 1983-05-26 1984-12-07 Toshiba Corp Semiconductor device
JPS60106170A (en) * 1983-11-15 1985-06-11 Toshiba Corp Thyristor with overvoltage protective function
US5001537A (en) * 1987-06-09 1991-03-19 Texas Instruments Incorporated Semiconductor device for electrical overstress protection

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