JPS559464B2 - - Google Patents
Info
- Publication number
- JPS559464B2 JPS559464B2 JP3096676A JP3096676A JPS559464B2 JP S559464 B2 JPS559464 B2 JP S559464B2 JP 3096676 A JP3096676 A JP 3096676A JP 3096676 A JP3096676 A JP 3096676A JP S559464 B2 JPS559464 B2 JP S559464B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3096676A JPS52114444A (en) | 1976-03-22 | 1976-03-22 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3096676A JPS52114444A (en) | 1976-03-22 | 1976-03-22 | Plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52114444A JPS52114444A (en) | 1977-09-26 |
| JPS559464B2 true JPS559464B2 (en) | 1980-03-10 |
Family
ID=12318400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3096676A Granted JPS52114444A (en) | 1976-03-22 | 1976-03-22 | Plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52114444A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001024248A1 (en) * | 1999-09-27 | 2001-04-05 | Applied Materials, Inc. | Hydrocarbon gases for anisotropic etching of metal-containing layers |
| US7049244B2 (en) | 1992-06-15 | 2006-05-23 | Micron Technology, Inc. | Method for enhancing silicon dioxide to silicon nitride selectivity |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59114840A (en) * | 1982-12-22 | 1984-07-03 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP2619395B2 (en) * | 1987-07-10 | 1997-06-11 | 株式会社日立製作所 | Plasma processing method |
| JPS6489518A (en) * | 1987-09-30 | 1989-04-04 | Nec Corp | Parallel flat board electrode type plasma etching device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS576691B2 (en) * | 1972-06-17 | 1982-02-06 | ||
| GB1417085A (en) * | 1973-05-17 | 1975-12-10 | Standard Telephones Cables Ltd | Plasma etching |
| JPS5740650B2 (en) * | 1973-08-11 | 1982-08-28 |
-
1976
- 1976-03-22 JP JP3096676A patent/JPS52114444A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049244B2 (en) | 1992-06-15 | 2006-05-23 | Micron Technology, Inc. | Method for enhancing silicon dioxide to silicon nitride selectivity |
| WO2001024248A1 (en) * | 1999-09-27 | 2001-04-05 | Applied Materials, Inc. | Hydrocarbon gases for anisotropic etching of metal-containing layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52114444A (en) | 1977-09-26 |