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JPS56140663A - Semiconductor device - Google Patents
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JPS56140663A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56140663A
JPS56140663A JP4394980A JP4394980A JPS56140663A JP S56140663 A JPS56140663 A JP S56140663A JP 4394980 A JP4394980 A JP 4394980A JP 4394980 A JP4394980 A JP 4394980A JP S56140663 A JPS56140663 A JP S56140663A
Authority
JP
Japan
Prior art keywords
sio2
layer
decreased
diffused
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4394980A
Other languages
Japanese (ja)
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kazutoshi Nagano
Seiji Onaka
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4394980A priority Critical patent/JPS56140663A/en
Publication of JPS56140663A publication Critical patent/JPS56140663A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To contrive the decrease of ON-resistance of a double diffused MOSFET in a cascode connection and to make the speed high by a method wherein a channel of J type FET is formed in drum shape by utilizing a transverse diffusion in a step region. CONSTITUTION:An N-epitaxal layer 2 is formed on an N<+> type Si substrate 1 and SiO2 7 is mounted to be etched. Then, the SiO2 7 is selectively mount also on the side surface of a convex 2' of the layer 2 and B-diffused to form P-layers 3, 3' and thereupon, parts 3a, 3'a are projected to the epitaxial layer. Thereafter, the P-layers are covered with SiO2 and opened a window to induce As and N type sources 4, 4' are formed in the layeres 3, 3'. The SiO2 on the side of the convex 2' is removed and a gate oxide film is formed to be attached with electrodes 5, 10. With this construction, since the ends of the gate 3, 3' can be thoroughly approached even by the shallow diffusion, the withstand is elevated, a P-N junction area is also decreased, a feedback capacity of an element is decreased and easily made high speed. In addition, the diffused layer is formed so shallow that the ion-resistance can thoroughly be decreased.
JP4394980A 1980-04-02 1980-04-02 Semiconductor device Pending JPS56140663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4394980A JPS56140663A (en) 1980-04-02 1980-04-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4394980A JPS56140663A (en) 1980-04-02 1980-04-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56140663A true JPS56140663A (en) 1981-11-04

Family

ID=12677951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4394980A Pending JPS56140663A (en) 1980-04-02 1980-04-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56140663A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697201A (en) * 1981-12-18 1987-09-29 Nissan Motor Company, Limited Power MOS FET with decreased resistance in the conducting state
JPS6380571A (en) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd Conductivity modulation vertical mos-fet
US4866492A (en) * 1986-02-28 1989-09-12 Polyfet Rf Devices, Inc. Low loss fet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697201A (en) * 1981-12-18 1987-09-29 Nissan Motor Company, Limited Power MOS FET with decreased resistance in the conducting state
US4866492A (en) * 1986-02-28 1989-09-12 Polyfet Rf Devices, Inc. Low loss fet
JPS6380571A (en) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd Conductivity modulation vertical mos-fet

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