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JPS5649550A - Semiconductor device - Google Patents
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JPS5649550A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5649550A
JPS5649550A JP12413179A JP12413179A JPS5649550A JP S5649550 A JPS5649550 A JP S5649550A JP 12413179 A JP12413179 A JP 12413179A JP 12413179 A JP12413179 A JP 12413179A JP S5649550 A JPS5649550 A JP S5649550A
Authority
JP
Japan
Prior art keywords
container
alloy
solder
fastening
fitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12413179A
Other languages
Japanese (ja)
Inventor
Kanji Otsuka
Masao Sekihashi
Tamotsu Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12413179A priority Critical patent/JPS5649550A/en
Publication of JPS5649550A publication Critical patent/JPS5649550A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the destruction of semiconductor devices by using kovan or 42% Ni-Fe alloy for fastening to a ceramic container a device fitting body made of Mo or W so that the relative distortion of the container and device fitting body due to heating may be reduced. CONSTITUTION:A bridge ring 2 of Kover of 42% Ni-Fe alloy is adhered, using a solder 8, to a metallized layer 13 located at the bottom of the central square-window part of a container-shaped ceramic body 10 mainly consisting of alumina or beryllia on which the metallized layers 11-14 of wire bonding, fastening, bridging and pin-fitting electrodes are provided. A heat radiating stud 1 and a device fitting plate 3 made of Mo or W are fastened to the lower and upper sides respectively of the layer 13 surrounded by the ring 2 and exposed. A semiconductor device 4 is fitted on the plate 3 and a given pattern of wiring is made using wire 5. Thereafter, the upper surface of the device 4 is covered with a Kovar or 42% Ni-Fe alloy cover 6 using a solder 9.
JP12413179A 1979-09-28 1979-09-28 Semiconductor device Pending JPS5649550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12413179A JPS5649550A (en) 1979-09-28 1979-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12413179A JPS5649550A (en) 1979-09-28 1979-09-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5649550A true JPS5649550A (en) 1981-05-06

Family

ID=14877680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12413179A Pending JPS5649550A (en) 1979-09-28 1979-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5649550A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860187U (en) * 1981-10-20 1983-04-22 シャープ株式会社 refrigerator
FR2550010A1 (en) * 1983-07-28 1985-02-01 Flonic Sa Electronic module for memory card and method of manufacturing this module.
JPS61149336U (en) * 1985-03-06 1986-09-16
JPS62290158A (en) * 1986-06-09 1987-12-17 Ngk Spark Plug Co Ltd Junction structure of ceramic of loading section of semiconductor element
JPH04196256A (en) * 1990-11-27 1992-07-16 Matsushita Electric Works Ltd Semiconductor chip carrier
JPH04230058A (en) * 1990-06-22 1992-08-19 Digital Equip Corp <Dec> Hollow chip package and manufacture
EP0634793A1 (en) * 1993-06-17 1995-01-18 Sun Microsystems, Inc. A low cost, thermally efficient, and surface mountable semiconductor package for a high applied power VLSI die

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860187U (en) * 1981-10-20 1983-04-22 シャープ株式会社 refrigerator
FR2550010A1 (en) * 1983-07-28 1985-02-01 Flonic Sa Electronic module for memory card and method of manufacturing this module.
JPS61149336U (en) * 1985-03-06 1986-09-16
JPS62290158A (en) * 1986-06-09 1987-12-17 Ngk Spark Plug Co Ltd Junction structure of ceramic of loading section of semiconductor element
JPH04230058A (en) * 1990-06-22 1992-08-19 Digital Equip Corp <Dec> Hollow chip package and manufacture
JPH04196256A (en) * 1990-11-27 1992-07-16 Matsushita Electric Works Ltd Semiconductor chip carrier
EP0634793A1 (en) * 1993-06-17 1995-01-18 Sun Microsystems, Inc. A low cost, thermally efficient, and surface mountable semiconductor package for a high applied power VLSI die

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