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JPS5811122B2 - solid state oscillator - Google Patents
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JPS5811122B2 - solid state oscillator - Google Patents

solid state oscillator

Info

Publication number
JPS5811122B2
JPS5811122B2 JP6540276A JP6540276A JPS5811122B2 JP S5811122 B2 JPS5811122 B2 JP S5811122B2 JP 6540276 A JP6540276 A JP 6540276A JP 6540276 A JP6540276 A JP 6540276A JP S5811122 B2 JPS5811122 B2 JP S5811122B2
Authority
JP
Japan
Prior art keywords
solid
state
waveguide
oscillator
capacitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6540276A
Other languages
Japanese (ja)
Other versions
JPS52147950A (en
Inventor
阪博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6540276A priority Critical patent/JPS5811122B2/en
Publication of JPS52147950A publication Critical patent/JPS52147950A/en
Publication of JPS5811122B2 publication Critical patent/JPS5811122B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/145Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
    • H03B9/146Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity formed by a disc, e.g. a waveguide cap resonator

Description

【発明の詳細な説明】 本発明は、固体発振素子を用いた固体発振装置に係り、
固体発振装置外部Q値を低くすると同時に発生出力を効
率よく取り出すことができるようにすることを目的とす
るものである。
[Detailed Description of the Invention] The present invention relates to a solid-state oscillation device using a solid-state oscillation element,
The object of this invention is to lower the external Q value of a solid-state oscillator and at the same time make it possible to efficiently extract the generated output.

マイクロ波固体発振器、増幅器においてその外部Q値を
低くするという要求は例えば注入同期増幅器及び自己注
入同期発振器などにおいて数多く為されている。
There are many demands for lowering the external Q value of microwave solid-state oscillators and amplifiers, such as injection-locked amplifiers and self-injection-locked oscillators.

低い外部Q値の設計は固体発振素子のマウント構造や外
部付加回路の構成に太きく左右される。
Designing a low external Q value largely depends on the mounting structure of the solid-state oscillation element and the configuration of the external additional circuit.

注入同期増幅器の同期引込み幅は注入同期増幅器に使う
発振器の外部Q値に逆比例するので同期引込み幅を広く
して増幅器の帯域幅を広くするには発振器の外部Q値を
低くしなければならない。
The synchronous pull-in width of an injection-locked amplifier is inversely proportional to the external Q value of the oscillator used in the injection-locked amplifier, so in order to widen the synchronous pull-in width and widen the amplifier bandwidth, the external Q value of the oscillator must be lowered. .

同様に温度に対して発振周波数が不安定な発振器に温度
安定な高Q共振器を結合させて発振周波数を安定化させ
る自己注入同期発振器においても、高Q共振器を結合さ
せる前の発振器の外部Q値を高Q共振器の無負荷Q値に
比して十分に小さくしておく必要がある。
Similarly, in a self-injection locked oscillator that stabilizes the oscillation frequency by coupling a temperature-stable high-Q resonator to an oscillator whose oscillation frequency is unstable with respect to temperature, the external It is necessary to keep the Q value sufficiently small compared to the no-load Q value of the high-Q resonator.

固体発振素子のマウントにも幾つかの方法が提案されて
おり、その1つとして従来より第1図に示したように固
体発振素子に円板状導体をかぶせた構造の固体発振器が
ある。
Several methods have been proposed for mounting solid-state oscillation elements, and one of them is a solid-state oscillator having a structure in which a solid-state oscillation element is covered with a disk-shaped conductor, as shown in FIG.

第1図において1は固体発振素子で、該固体発振素子1
に円板状導体2をかぶせて方形導波管3内にマウントし
ている。
In FIG. 1, 1 is a solid-state oscillation element, and the solid-state oscillation element 1
is mounted in a rectangular waveguide 3 by covering it with a disc-shaped conductor 2.

この構造では発振周波数は主として円板状導体2の径D
′により決定されてしまい、発振周波数の微調整には可
動短絡器4が使われる。
In this structure, the oscillation frequency is mainly determined by the diameter D of the disc-shaped conductor 2.
', and the movable short circuit 4 is used for fine adjustment of the oscillation frequency.

5は円板状導体2付近の電界の様子を示したものである
5 shows the state of the electric field near the disc-shaped conductor 2.

しかし上記従来形の第1図の構造による固体発振装置で
は円板状導体2の形成するラジアルモードのインピーダ
ンス(数lOΩ)と導波管インピーダンス(数100Ω
)とは大きく異なるためラジアルモードから導波管モー
ドへの交換がなめらかになされていない。
However, in the conventional solid-state oscillator device with the structure shown in FIG.
), so the exchange from radial mode to waveguide mode is not smooth.

従って低い固体発振素子インピーダンス(数Ω〜数10
Ω)から導波管インピーダンスへの変換もなめらかに行
なわれ得ないため、固体発振装置の外部Q値は比較的高
くなり、しかも発振出力を効率よ(取り出せ得ない欠点
を有する。
Therefore, the solid-state oscillator impedance is low (several ohms to several tens of ohms
Since the conversion from Ω) to waveguide impedance cannot be performed smoothly, the external Q value of the solid-state oscillator becomes relatively high, and the oscillation output cannot be extracted efficiently.

本発明の目的は上記従来の欠点を簡単な構成による回路
を付加することにより改善しようとするものである。
An object of the present invention is to improve the above-mentioned conventional drawbacks by adding a circuit with a simple configuration.

以下本発明の幾つかの実施例を図面に基づき説明するが
、第1図と同一箇所にはすべて第1図と同一番号を付し
て説明する。
Several embodiments of the present invention will be described below based on the drawings, and all the same parts as in FIG. 1 will be described with the same numbers as in FIG. 1.

第2図a、bは本発明の第1実施例を示し、固体発振素
子1には円板状導体2をかぶせてあり、方形導波管3内
にマウントされている。
FIGS. 2a and 2b show a first embodiment of the present invention, in which a solid-state oscillation element 1 is covered with a disc-shaped conductor 2 and mounted within a rectangular waveguide 3. FIG.

4は可動短絡器である。4 is a movable short circuit.

円板状導体2に近接した位置に容量性絞り6が設けられ
ている。
A capacitive aperture 6 is provided at a position close to the disc-shaped conductor 2.

この容量性絞り6により同図すの電界7で示すように円
板状導体2のラジアルモードから導波管モードへのなめ
らかな電磁界モードの変換が可能となる。
This capacitive aperture 6 enables smooth conversion of the electromagnetic field mode from the radial mode of the disc-shaped conductor 2 to the waveguide mode, as shown by the electric field 7 in the figure.

即ち、ここで、第1図の従来例と第2図の本発明の実施
例とを円板状導体2付近の第1図の電界5及び第2図す
の電界7とで比較すると、第2図すでの電界7の方が円
板状導体2から導波管3へなめらかに変化していること
がわかる。
That is, when comparing the conventional example shown in FIG. 1 and the embodiment of the present invention shown in FIG. 2 in terms of the electric field 5 in FIG. 1 and the electric field 7 in FIG. It can be seen that the electric field 7 in Figure 2 changes more smoothly from the disc-shaped conductor 2 to the waveguide 3.

即ち、このような容量性絞り6を付加することにより、
固体発振素子1の低インピーダンスな導波管3の高いイ
ンピーダンスへなめらかに変換することができる。
That is, by adding such a capacitive aperture 6,
The low impedance of the solid-state oscillation device 1 can be smoothly converted to the high impedance of the waveguide 3.

従って発振出力が効率よく導波管3の負荷側に取り出せ
て、しかも外部Q値の低い固体発振装置が得られる。
Therefore, the oscillation output can be efficiently taken out to the load side of the waveguide 3, and a solid-state oscillator device with a low external Q value can be obtained.

ここで、容量性絞り6の位置は、円板状導体2の縁から
λg/8(λgは管内波長)以内の距離に近接して設け
ると得られる効果が特に大きくなる。
Here, if the capacitive diaphragm 6 is located close to the edge of the disc-shaped conductor 2 within a distance of λg/8 (λg is the wavelength within the tube), the effect obtained will be particularly large.

しかも、容量性絞り6の位置は円板状導体2から離れる
方向に対してだけでなく、円板状導体2と重なる方向に
対しても同様の効果が得られる。
Moreover, the same effect can be obtained not only in the position of the capacitive aperture 6 in the direction away from the disc-shaped conductor 2 but also in the direction overlapping with the disc-shaped conductor 2.

第3図は本発明の第2の実施例を示すもので、第2の実
施例の応用例を示した帯域阻止形安定化発振器である。
FIG. 3 shows a second embodiment of the present invention, and is a band-stop type stabilized oscillator showing an application example of the second embodiment.

第3図において固体発振素子1から約λg/2(λgは
管内波長)の位置に温度変化に対して共振周波数が安定
な高Q空胴共振器9が結合孔10を通して導波管3と結
合されているそれ以外の構成は第2図の構成と全く同じ
である安定化高Q空胴共振器9の共振周波数fcに固体
発振装置の発振周波数foが近づくと、固体発振装置の
発振周波数foはfcに引き込まれてしまい、固体発振
装置はfcとほぼ同一周波数で発振するようになる。
In FIG. 3, a high-Q cavity resonator 9 whose resonant frequency is stable against temperature changes is connected to the waveguide 3 through a coupling hole 10 at a position approximately λg/2 (λg is the tube wavelength) from the solid-state oscillator 1. The rest of the configuration is exactly the same as the configuration shown in FIG. is pulled into fc, and the solid-state oscillator starts to oscillate at almost the same frequency as fc.

従って温度変化に対して発振周波数が変動する被安定化
発振器の発振周波数を安定化高Q空胴共振器9により安
定化することができる。
Therefore, the oscillation frequency of the stabilized oscillator whose oscillation frequency fluctuates with temperature changes can be stabilized by the stabilized high-Q cavity resonator 9.

以上の実施例では高Q空胴共振器を使用したが、それ以
外にも温度変化に対して共振周波数が安定な誘電体共振
器を使用できることは言うまでもない。
Although a high-Q cavity resonator is used in the above embodiment, it goes without saying that a dielectric resonator whose resonant frequency is stable against temperature changes can also be used.

第4図は第2図の実施例で容量性絞り6の高さhを変化
させた時の発振器の外部Q値と発振出力のデータを示す
FIG. 4 shows data on the external Q value and oscillation output of the oscillator when the height h of the capacitive aperture 6 is varied in the embodiment shown in FIG.

Hは導波管3の高さである。このデータより容量性絞り
6の高さhを適当に選ぶことにより発振器の外部Q値が
低くて発振効率のよい固体発振装置が得られると同時に
、外部Q値の調整も容易にできることがわかる。
H is the height of the waveguide 3. From this data, it can be seen that by appropriately selecting the height h of the capacitive aperture 6, a solid-state oscillator device with a low external Q value of the oscillator and high oscillation efficiency can be obtained, and at the same time, the external Q value can be easily adjusted.

第5図は本発明の第3実施例を示すものであり、第2図
における可動短絡器4のみを無反射終端器8に置き換え
たものである。
FIG. 5 shows a third embodiment of the present invention, in which only the movable short circuit 4 in FIG. 2 is replaced with a non-reflection terminator 8.

固体発振素子1の低いインピーダンスと無反射終端器8
側の高い導波管インピーダンスとは容量性絞りがないの
で変換がなめらかに行なわれていない。
Low impedance of solid-state oscillator 1 and non-reflection terminator 8
The high impedance of the waveguide on the side means that there is no capacitive aperture, so conversion is not performed smoothly.

従って無反射終端器8側へ出てい(発振出力は非常に少
なくでき無反射終端器8で消費されてしまう発振電力は
少なく、それ散発振出力のほとんどは負荷側に効率よく
取り出すことができる。
Therefore, the oscillation output to the non-reflection terminator 8 side can be extremely reduced, the oscillation power consumed by the non-reflection terminator 8 is small, and most of the sporadic oscillation output can be efficiently taken out to the load side.

しかも、可動短絡器4を無反射終端器8に置き換えてい
るので、可動短絡器4による不要な共振特性が除去され
るため、固体発振器の発振特性が安定する。
Furthermore, since the movable short circuit 4 is replaced with the non-reflection terminator 8, unnecessary resonance characteristics caused by the movable short circuit 4 are removed, so that the oscillation characteristics of the solid-state oscillator are stabilized.

第6図は本発明による第4実施例を示すもので、円板状
導体20両側に近接して容量性絞り6と6′を設けたと
きの応用例を示したものである。
FIG. 6 shows a fourth embodiment of the present invention, in which capacitive apertures 6 and 6' are provided close to both sides of a disc-shaped conductor 20.

容量性絞り6′の導波管出力側には無反射終端器8が設
けられており、無反射終端器8と容量性絞り6′の間に
固体発振素子1から約λg/2(λgは管内波長)の位
置に温度変化に対して共振周波数が安定な高Q空胴共振
器9が結合孔10を通して導波管3と結合されている。
A non-reflection terminator 8 is provided on the waveguide output side of the capacitive aperture 6', and approximately λg/2 (λg is A high-Q cavity resonator 9 whose resonant frequency is stable against temperature changes is coupled to the waveguide 3 through a coupling hole 10 at a position at a wavelength within the tube.

安定化高Q空胴共振器9の共振周波数fcに固体発振装
置の発振周波数foが近づ(と、固体発振装置の発振周
波数f。
The oscillation frequency fo of the solid-state oscillator approaches the resonance frequency fc of the stabilized high-Q cavity resonator 9 (and the oscillation frequency f of the solid-state oscillator).

はfcに引き込まれてしまい、固体発振装置はfcとほ
ぼ同一周波数で発振するようになる。
is pulled into fc, and the solid-state oscillator starts to oscillate at almost the same frequency as fc.

従って温度変化に対して発振周波数が変動する被安定化
発振器の発振周波数を安定化高Q空胴共振器9により安
定化することができる。
Therefore, the oscillation frequency of the stabilized oscillator whose oscillation frequency fluctuates with temperature changes can be stabilized by the stabilized high-Q cavity resonator 9.

固体発振装置と安定化高Q空胴共振器9との結合の大き
さは容量性絞り6′の高さhlだけでな(距離11を変
えることによっても調整が可能であり、固体発振装置と
負荷側との結合は容量性絞り6の高さh2や距離12を
変えることにより調整ができる。
The magnitude of the coupling between the solid-state oscillator and the stabilized high-Q cavity resonator 9 is determined not only by the height hl of the capacitive aperture 6' (it can also be adjusted by changing the distance 11), The coupling with the load side can be adjusted by changing the height h2 and distance 12 of the capacitive diaphragm 6.

第7図は本発明による第5実施例を示すものである。FIG. 7 shows a fifth embodiment of the present invention.

固体発振素子1、円板状導体2、可動短絡器4は第2図
の実施例の構成と全く同一である。
The solid-state oscillation element 1, the disc-shaped conductor 2, and the movable short circuit 4 are completely the same as those in the embodiment shown in FIG.

11は容量性絞りでねじ穴14を有する導波管フランジ
12と、ねじ穴15を有する方形導波管13との間に挾
み、ねじ16により全体を固着させるような構成であり
、容量性絞り11を上下方向、つまり方形導波管13の
H面に垂直な方向にずらすことができる。
Reference numeral 11 denotes a capacitive aperture which is sandwiched between a waveguide flange 12 having a screw hole 14 and a rectangular waveguide 13 having a screw hole 15, and is configured such that the whole is fixed with a screw 16. The aperture 11 can be shifted in the vertical direction, that is, in the direction perpendicular to the H-plane of the rectangular waveguide 13.

第8図aybにそれぞれ第7図の実施例における容量性
絞り11と導波管のフランジ12の側面図である。
8a and 8b are side views of the capacitive diaphragm 11 and the waveguide flange 12 in the embodiment of FIG. 7, respectively.

容量性絞り11の四隅はねじ16の障害にならないよう
に取り除いである。
The four corners of the capacitive restrictor 11 are removed so as not to obstruct the screw 16.

第7図の構成により容量性絞り11の高さhの調整毎に
容量性絞り11を取り換える必要がなく、一枚の容量性
絞り11だけで任意の高さhに変更できるので、固体発
振装置の外部Q値の調整を非常に容易に行なうことがで
きる。
With the configuration shown in FIG. 7, there is no need to replace the capacitive diaphragm 11 each time the height h of the capacitive diaphragm 11 is adjusted, and the height h can be changed to any desired height using just one capacitive diaphragm 11, so the solid-state oscillator The external Q value can be adjusted very easily.

本発明は以上述べたように実施し得るものであって、構
成が簡単な容量性絞りを固体発振素子にかぶせる円板状
導体の近傍に付加することにより、固体発振素子の低い
素子インピーダンスを高い導波管インピーダンスへなめ
らかに変換させることができ、固体発振装置の外部Q値
を低くできると同時に発振出力を効率よく負荷に取り出
すことができる。
The present invention can be implemented as described above, and by adding a capacitive diaphragm with a simple configuration near the disc-shaped conductor that covers the solid-state oscillation element, the low element impedance of the solid-state oscillation element can be increased. The impedance can be smoothly converted to the waveguide impedance, and the external Q value of the solid-state oscillator can be lowered, and at the same time, the oscillation output can be efficiently extracted to the load.

従って注入同期増幅器や自己注入同期発振器などに有効
である。
Therefore, it is effective for injection-locked amplifiers, self-injection-locked oscillators, etc.

しかも容量性絞りの取り付は位置が円板状導体の近傍で
あるために固体発振装置全体の外形寸法を小さくできる
Moreover, since the capacitive diaphragm is mounted near the disc-shaped conductor, the external dimensions of the entire solid-state oscillator can be reduced.

更に容量性絞りの高さと位置を変えることにより容易に
固体発振装置と負荷との結合を調整できる。
Furthermore, by changing the height and position of the capacitive aperture, the coupling between the solid-state oscillator and the load can be easily adjusted.

更に固体発振素子にかぶせる円板状導体の両側にそれぞ
れ容量性絞りを付加して両方向性負荷の固体発振装置を
構成し、両方向の負荷に対する固体発振装置の結合の大
きさをそれぞれの容量性絞りの高さと位置により調整で
きる等々の効果を有するものである。
Furthermore, a solid-state oscillator with a bidirectional load is constructed by adding capacitive apertures to both sides of the disk-shaped conductor that covers the solid-state oscillator, and the magnitude of the coupling of the solid-state oscillator to the load in both directions is determined by each capacitive aperture. It has the advantage of being able to be adjusted by adjusting the height and position.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の円板状導体を固体発振素子にかぶせた構
成の固体発振装置を示す断面図であり、第2図は本発明
の第1実施例を示し同図aは側断面図、bは正断面図、
第3図は本発明の第2実施例を示す断面図、第4図は第
2実施例における特性図、第5図〜第7図はそれぞれ本
発明の異なった実施例を示す断面図、第8図a、bはそ
れぞれ第1図の実施例における容量性絞りと導波管フラ
ンジの側面図を示す。 図中、1・・・・・・固体発振素子、2・・・・・・円
板状導体、3・・・・・一方形導波管、4・・・・・・
可動短絡器、5・・・・・電界、6,6′・・・・・・
容量性絞り、7・・・・電界、8・・・無反射終端器、
9・・・・・・空胴共振器、10・・・・・・結合孔、
11・・・・・容量性絞り、12・・・・・・導波管フ
ランジ、13・・・方形導波管、14,15・・・・・
・ねじ穴、16・・・・・・ねじ。
FIG. 1 is a sectional view showing a solid-state oscillator device having a structure in which a conventional disc-shaped conductor is covered with a solid-state oscillation element, and FIG. 2 shows a first embodiment of the present invention, and FIG. b is a front sectional view,
FIG. 3 is a sectional view showing a second embodiment of the present invention, FIG. 4 is a characteristic diagram of the second embodiment, and FIGS. 5 to 7 are sectional views showing different embodiments of the present invention. 8a and 8b show side views of the capacitive diaphragm and waveguide flange, respectively, in the embodiment of FIG. 1. In the figure, 1...Solid oscillation element, 2...Disc-shaped conductor, 3...One-sided waveguide, 4...
Movable short circuit, 5...Electric field, 6,6'...
Capacitive aperture, 7... Electric field, 8... Non-reflection terminator,
9...Cavity resonator, 10...Coupling hole,
11... Capacitive aperture, 12... Waveguide flange, 13... Rectangular waveguide, 14, 15...
・Screw hole, 16...screw.

Claims (1)

【特許請求の範囲】 1 固体発振素子に平板状導体をかぶせて導波管内にマ
ウントした固体発振装置において、該固体発振装置の導
波管開口片側または両側に前記平板状導体に近接して容
量性絞りを設けたことを特徴とする固体発振装置。 2 導波管を方形導波管とし、容量性絞りを前記方形導
波管のH面に垂直な方向に動かせるようにしたことを特
徴とする特許請求の範囲第1項記載の固体発振装置。
[Scope of Claims] 1. In a solid-state oscillation device in which a solid-state oscillation element is covered with a flat conductor and mounted in a waveguide, a capacitance is provided near the flat conductor on one or both sides of the waveguide opening of the solid-state oscillation device. A solid-state oscillator device characterized by having a magnetic aperture. 2. The solid-state oscillator device according to claim 1, wherein the waveguide is a rectangular waveguide, and the capacitive aperture is movable in a direction perpendicular to the H-plane of the rectangular waveguide.
JP6540276A 1976-06-03 1976-06-03 solid state oscillator Expired JPS5811122B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6540276A JPS5811122B2 (en) 1976-06-03 1976-06-03 solid state oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6540276A JPS5811122B2 (en) 1976-06-03 1976-06-03 solid state oscillator

Publications (2)

Publication Number Publication Date
JPS52147950A JPS52147950A (en) 1977-12-08
JPS5811122B2 true JPS5811122B2 (en) 1983-03-01

Family

ID=13285973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6540276A Expired JPS5811122B2 (en) 1976-06-03 1976-06-03 solid state oscillator

Country Status (1)

Country Link
JP (1) JPS5811122B2 (en)

Also Published As

Publication number Publication date
JPS52147950A (en) 1977-12-08

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