JPS5811749B2 - flat thyristor stack - Google Patents
flat thyristor stackInfo
- Publication number
- JPS5811749B2 JPS5811749B2 JP54068940A JP6894079A JPS5811749B2 JP S5811749 B2 JPS5811749 B2 JP S5811749B2 JP 54068940 A JP54068940 A JP 54068940A JP 6894079 A JP6894079 A JP 6894079A JP S5811749 B2 JPS5811749 B2 JP S5811749B2
- Authority
- JP
- Japan
- Prior art keywords
- flat thyristor
- flat
- aluminum fin
- aluminum
- thyristor stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は、平形サイリスタスタック、特に冷却体である
アルミフィンの電蝕を防止してなる平形サイリスタスタ
ックに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a flat thyristor stack, and particularly to a flat thyristor stack in which electrolytic corrosion of aluminum fins serving as a cooling body is prevented.
従来の平形サイリスタスタックのアルミフィンの耐電触
法としては、コンパウンド塗布法とカッパーライジング
法とがあるが、前者は平形サイリスタ素子の電極とアル
ミフィンの接合面に、クリーム状のコンパウンドを塗布
するのみで長期間の使用に耐えられないという欠点があ
る。Conventional electrical contact resistance methods for aluminum fins in flat thyristor stacks include the compound coating method and the copperlizing method, but the former simply applies a cream-like compound to the joint surface between the electrode of the flat thyristor element and the aluminum fin. The drawback is that it cannot withstand long-term use.
後者は、第１図に示す様に平形サイリスタ素子（一般的
には、平形サイリ又夕）１め電極部アルミフィン２の接
合面で、アルミフィン２に薬品を浸透させて耐電蝕処理
１０をし、その上に…メッキ１１、銀メツ午１２を施こ
すもので、長期間の徒用に耐えられるが、処理工程が多
い為、納期が長く高価となる欠点がある。As shown in FIG. 1, the latter is a flat thyristor element (generally a flat thyristor element) 1. At the joint surface of the electrode part aluminum fin 2, a chemical is infiltrated into the aluminum fin 2 to give it anti-galvanic corrosion treatment 10. On top of that, plating 11 and silver metal porcelain 12 are applied, and it can withstand long-term use, but it has the drawback of requiring a long delivery time and being expensive because it requires many processing steps.
また、第２図に平面図、第３図にその側面図で示すよ５
Ｋ、平形サイリスタ素子１を流れる電流を、アルミフィ
ン２を介して銅端子４より取り出す平形サイリスタスタ
ック方式では、第３図に示すように耐電蝕処理部１３を
多くの場所に設けるという欠点がある。In addition, as shown in a plan view in Fig. 2 and a side view in Fig. 3,
K. The flat thyristor stack method, in which the current flowing through the flat thyristor element 1 is taken out from the copper terminal 4 via the aluminum fin 2, has the disadvantage that galvanic corrosion-resistant parts 13 are provided in many places, as shown in Figure 3. .
尚、３はゲートリード線である。Note that 3 is a gate lead wire.
本発明の目的は、アルミフィン自体に耐電蝕処理加工を
することなく、アルミフィンを電蝕かも保護することに
より、安価な平形サイリスタスタックを提供するにある
。An object of the present invention is to provide an inexpensive flat thyristor stack by protecting aluminum fins from electrolytic corrosion without applying anti-galvanic corrosion treatment to the aluminum fins themselves.
本発明の要旨は以下の通りである。The gist of the invention is as follows.
一般的にみて、アルミフィンと平形サイリスタ素子の銅
電極の接合面で素子を流れる電流をアルミフィンを通し
て電流を取り出す時に、その接合面で電蝕が発生する。Generally speaking, when the current flowing through the element is taken out through the aluminum fin at the joint surface between the aluminum fin and the copper electrode of the flat thyristor element, electrolytic corrosion occurs at the joint surface.
本発明では、この電蝕を解消する手段としてアルミフィ
ンと素子電極間に電気絶縁熱伝導性樹脂を挿入しアルミ
フィンを本来の冷却体のみの機能を持たせ、かつ、アル
ミラインに電流を流さないようにしたものである。In the present invention, as a means to eliminate this electrolytic corrosion, an electrically insulating and thermally conductive resin is inserted between the aluminum fin and the element electrode, so that the aluminum fin functions only as a cooling body, and at the same time, electric current is not passed through the aluminum line. I tried to avoid it.
以下、図面により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to the drawings.
第４図は、本発明の実施例である平形サイリスタスタッ
クの平面図、第５図はその側面図である。FIG. 4 is a plan view of a flat thyristor stack according to an embodiment of the present invention, and FIG. 5 is a side view thereof.
平形サイリスタ素子１は、銅端子４（電流引き出し端子
）により上下に挾まれ、それを電気絶縁熱伝導性樹脂６
で挾み、アルミフィン２で上下より押え込んでいる。A flat thyristor element 1 is sandwiched between upper and lower copper terminals 4 (current extraction terminals), and is connected to an electrically insulating and thermally conductive resin 6.
, and press down with aluminum fins 2 from above and below.
平形サイリスタ素子１は、−ンタービン５により位置決
めされる。The flat thyristor element 1 is positioned by a turn turbine 5.
かかる構成では、電流は、上下の銅端子４を介し平形サ
イリスク素子１を流れる。In such a configuration, current flows through the flat silice element 1 via the upper and lower copper terminals 4.
この際、アルミフィンと銅端子４とは樹脂６によって絶
縁され、且つ樹脂６が熱伝導性であるため一電流通電部
とアルミフィンが絶縁されアルミフィンはその本来の冷
却体としてだけの機能を果すことになる。At this time, the aluminum fin and the copper terminal 4 are insulated by the resin 6, and since the resin 6 is thermally conductive, the current carrying part and the aluminum fin are insulated, and the aluminum fin functions only as its original cooling body. I will accomplish it.
本発明によれば、以下の効果がある。According to the present invention, there are the following effects.
（１）アルミフィンに耐電蝕処理加工をすることなく電
蝕を防止できるので、安価な平形サイリスタスタツクを
提供できる。(1) Since galvanic corrosion can be prevented without applying anti-galvanic corrosion treatment to the aluminum fins, an inexpensive flat thyristor stack can be provided.
（２）アルミフィンに、工数のかかる耐電蝕処理加工を
必要としないので、納期短縮を計ることができる。(2) Since the aluminum fin does not require a time-consuming galvanic corrosion-resistant treatment, the delivery time can be shortened.
第１図、２図、第３図は従来例図、第４図、第５図は本
発明の実施例図である。
１・・・平形サイリスタ素子、２・・・アルミフィン、
４・・・銅端子、６・・・電気絶縁性、熱伝導性樹脂。1, 2 and 3 are conventional examples, and FIGS. 4 and 5 are examples of the present invention. 1... Flat thyristor element, 2... Aluminum fin,
4...Copper terminal, 6...Electrical insulating, thermally conductive resin.
Claims (1)
ンとの間に電気絶縁性で且つ熱伝導性樹脂を介在せしめ
ると共に、上記電極部より電流引き出し端子を外部に導
出するように構成した平形サイリスタス〉ツク。1. A flat thyristor in which an electrically insulating and thermally conductive resin is interposed between the electrode part of the flat thyristor and an aluminum fin serving as a cooling body, and a current extraction terminal is led out from the electrode part to the outside. 〉Tsuku.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54068940A JPS5811749B2 (en) | 1979-06-04 | 1979-06-04 | flat thyristor stack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54068940A JPS5811749B2 (en) | 1979-06-04 | 1979-06-04 | flat thyristor stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55162250A JPS55162250A (en) | 1980-12-17 |
| JPS5811749B2 true JPS5811749B2 (en) | 1983-03-04 |
Family
ID=13388160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54068940A Expired JPS5811749B2 (en) | 1979-06-04 | 1979-06-04 | flat thyristor stack |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5811749B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2234154B1 (en) * | 2000-04-19 | 2016-03-30 | Denso Corporation | Coolant cooled type semiconductor device |
| EP3699323A1 (en) * | 2019-02-20 | 2020-08-26 | Hymeth ApS | Electrode system |
-
1979
- 1979-06-04 JP JP54068940A patent/JPS5811749B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55162250A (en) | 1980-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3958075A (en) | High power thick film circuit with overlapping lead frame | |
| KR850008557A (en) | Semiconductor devices | |
| US4057825A (en) | Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered | |
| JPS5811749B2 (en) | flat thyristor stack | |
| GB1355010A (en) | Semiconductor rectifier assemblies | |
| JPS612264A (en) | Battery with lead terminal | |
| JPH0636572Y2 (en) | Chip type solid electrolytic capacitor | |
| JPH0240532Y2 (en) | ||
| JPH019155Y2 (en) | ||
| JPS5826542Y2 (en) | Connecting terminal | |
| JPS5852641Y2 (en) | Positive characteristic thermistor | |
| JPS6220983Y2 (en) | ||
| JPH0585053U (en) | Electronic component with resistance element | |
| JPS5932148Y2 (en) | Chip parts for jumpers | |
| JPH0339895Y2 (en) | ||
| JPH0641340U (en) | High voltage cable end | |
| JPS6038242Y2 (en) | Positive characteristic thermistor | |
| JPS6217874B2 (en) | ||
| JP2001102404A (en) | Semiconductor device | |
| JPH03248513A (en) | Flat type aluminum electrolytic capacitor | |
| JPS58169814A (en) | Lightning resistant bushing and lightning resistant electric device using same bushing | |
| JPS59125833U (en) | semiconductor equipment | |
| JPH0556001B2 (en) | ||
| TH40012A3 (en) | Connection leads for semiconductor devices and lead wire manufacturing methods | |
| JPS58310U (en) | power cable |