JPS5812977B2 - image can - Google Patents
image canInfo
- Publication number
- JPS5812977B2 JPS5812977B2 JP13701675A JP13701675A JPS5812977B2 JP S5812977 B2 JPS5812977 B2 JP S5812977B2 JP 13701675 A JP13701675 A JP 13701675A JP 13701675 A JP13701675 A JP 13701675A JP S5812977 B2 JPS5812977 B2 JP S5812977B2
- Authority
- JP
- Japan
- Prior art keywords
- secondary electron
- electron multiplier
- tube
- image
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】
この発明は2次電子増倍板(マイクロチャンネルプレー
ト)を内蔵したイメージ管に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image tube incorporating a secondary electron multiplier plate (microchannel plate).
従来、2次電子増倍板を内蔵した近接型のイメージ管(
プロキシミティー管)は、第1図に示すように構成され
ている。Conventionally, a proximity image tube with a built-in secondary electron multiplier (
The proximity tube (proximity tube) is constructed as shown in FIG.
即ち、ガラス又はファイバーオプテイクスプレートから
なり内面に光電面1を有する入力窓2、2次電子増倍板
3、及び内面にメタルバックを施した出力蛍光面4を有
するガラス又はファイバーオプテイクスプレートからな
る出力窓5が順次所定間隔をおいて同軸的に配設され、
金属環体及びセラミック環体からなる外匡器6により真
空封止されている。That is, from a glass or fiber optics plate having an input window 2 having a photocathode 1 on its inner surface, a secondary electron multiplier plate 3, and an output fluorescent screen 4 having a metal back on its inner surface. Output windows 5 are sequentially arranged coaxially at predetermined intervals,
It is vacuum-sealed by an outer casing 6 consisting of a metal ring and a ceramic ring.
この場合、光電面1と2次電子増倍板3との間隔は例え
ば0.2mmであり、2次電子増倍板3と出力蛍光面4
との間隔は例えば約1mmである。In this case, the distance between the photocathode 1 and the secondary electron multiplier 3 is, for example, 0.2 mm, and the distance between the secondary electron multiplier 3 and the output phosphor screen 4 is 0.2 mm.
The distance between the two is, for example, about 1 mm.
又、2次電子増倍板3は第2図に示すように構成され、
例えば高鉛含有ガラスからなる基板7の両端面にはそれ
ぞれ導電性被覆されて入力面8と出力面9が形成されて
いる。Further, the secondary electron multiplier plate 3 is configured as shown in FIG.
For example, both end surfaces of a substrate 7 made of high lead-containing glass are coated with conductive material to form an input surface 8 and an output surface 9, respectively.
そしてこの基板7には多数の微細な透孔であるチャンネ
ル10が穿設され、このチャンネル10の内面はスムー
ズに仕上げられると共に大きな2次電子放出比が得られ
るように表面処理が施されている。A large number of channels 10, which are fine holes, are bored in the substrate 7, and the inner surface of the channels 10 is finished smoothly and is surface-treated to obtain a high secondary electron emission ratio. .
又、半導電性に仕上げられており、基板7の両端面(入
力面8、出力面9)に電圧が印加されることによりチャ
ンネル10内空間にはチャンネル10の軸方向に一様な
加速電界が形成される。In addition, it is finished to be semi-conductive, and by applying a voltage to both end surfaces (input surface 8, output surface 9) of the substrate 7, a uniform accelerating electric field is created in the space inside the channel 10 in the axial direction of the channel 10. is formed.
このようなイメージ管において動作時には、2次電子増
倍板3の入力面8には光電面1に対して+3 0 0V
の電王が印加され、又出力面9には入力面8に対して+
1000v内外の電圧が印加されている。When such an image tube is in operation, the input surface 8 of the secondary electron multiplier 3 has a voltage of +30 0V with respect to the photocathode 1.
is applied to the output surface 9, and + to the input surface 8 is applied to the output surface 9.
A voltage of around 1000v is applied.
更に出力蛍光而4には2次電子増倍板3の出力面9に対
して例えば5KVの高電圧が印加される。Further, a high voltage of 5 KV, for example, is applied to the output surface 9 of the secondary electron multiplier 3 to the output fluorescent light source 4.
そして光線11が入力窓2に入射すると、光像が光電面
1に結像され、場所による光の強弱に応じて光電面1よ
り光電子が放出される。When the light beam 11 enters the input window 2, a light image is formed on the photocathode 1, and photoelectrons are emitted from the photocathode 1 depending on the strength of the light depending on the location.
この光電子は電界により加速されて2次電子増倍板3の
チャンネル10内に突入する。These photoelectrons are accelerated by the electric field and rush into the channel 10 of the secondary electron multiplier plate 3.
チャンネル10内部に入射した光電子は壁面に衝突しな
がらその度に多数の2次電子を放出し、入射口から遠ざ
かるに従って電子密度を増大し出口に至る。The photoelectrons entering the channel 10 emit a large number of secondary electrons each time they collide with the wall surface, and as they move away from the entrance, the electron density increases and reaches the exit.
この増倍された電子流をいわゆる近接集束方式により加
速集束し、出力蛍光面4に射突させて発光させ、明るい
映像を生じさせる。This multiplied electron flow is accelerated and focused by a so-called proximity focusing method, and is caused to collide with the output phosphor screen 4 to emit light, producing a bright image.
このようにして入射光に対して数万倍に増倍された光像
が得られる。In this way, an optical image that is multiplied tens of thousands of times relative to the incident light is obtained.
ところで従来の電子管ではパルクもしくは通電ゲツター
を内蔵することは、スペース的に充分であったが、プロ
キシミテイー管にすることによってそれらのゲツターを
内蔵することはスペース的に困難であり、チャンネルイ
メージインテインシファイアーの様な電子管では2次電
子増倍板3の出力面との間は、電子密度が高くしかも高
電界がかかるため、イオンが発生する確率が非常に高い
。By the way, in conventional electron tubes, it was sufficient space to incorporate pulse or current-carrying getters, but with proximity tubes, it was difficult to incorporate these getters in terms of space, and channel image inte... In an electron tube such as a Siphire, the electron density is high and a high electric field is applied between the tube and the output surface of the secondary electron multiplier 3, so the probability of ion generation is very high.
さらに蛍光面が多量の電子でたたかれるため、多量のガ
スを発生することから、管内の真空度の劣化はさけられ
ない問題である。Furthermore, since the phosphor screen is bombarded with a large amount of electrons, a large amount of gas is generated, so deterioration of the vacuum inside the tube is an unavoidable problem.
したがって特性の劣化も速く寿命も著しく短かい等の欠
点が生ずる。Therefore, there are disadvantages such as rapid deterioration of characteristics and extremely short service life.
この発明は上記事情に鑑みなされたもので、管内の放出
ガスを吸着して真空度を良くすることにより特性的にも
安定で且つ寿命の長い近接型のイメージ管(プロキシミ
テイー管)を提供することを目的とする。This invention was made in view of the above circumstances, and provides a proximity type image tube (proximity tube) that has stable characteristics and a long life by adsorbing the released gas inside the tube and improving the degree of vacuum. The purpose is to
以下、図面を参照してこの発明の一実施例を詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
この発明は上記従来の欠点を除去するために2次電子増
倍板を改良したもので、この発明のイメージ管に内蔵さ
れる2次電子増倍板は第3図に示すように構成されてい
る。This invention improves the secondary electron multiplier plate in order to eliminate the above-mentioned conventional drawbacks.The secondary electron multiplier plate built into the image tube of the present invention is constructed as shown in FIG. There is.
即ち、従来例(第1図及び第2図)と同一箇所は同一符
号を付すことにすると2次電子増倍板3の出力面9には
、チタンTi薄膜13が被覆されている。That is, the same parts as in the conventional example (FIGS. 1 and 2) are denoted by the same reference numerals.The output surface 9 of the secondary electron multiplier plate 3 is coated with a titanium Ti thin film 13.
この場合、製造に当っては、出力面9となる金属蒸着膜
を基板7端面に蒸着した後、Ti薄膜13を重ねて被着
すればよい。In this case, in manufacturing, after the metal vapor deposition film that will become the output surface 9 is vapor-deposited on the end surface of the substrate 7, the Ti thin film 13 may be deposited in an overlapping manner.
尚、Ti薄膜13は出力面9にのみ被覆され、チャンネ
ル10内には、被覆されない。Note that the Ti thin film 13 is coated only on the output surface 9, and the inside of the channel 10 is not coated.
尚、図中14はメタルバックである。この発明のイメー
ジ管は、上記のように出力面9にTi薄膜13を被覆す
る以外は従来例(第1図及び第2図)と同様構成ゆえ、
詳細な説明を省略する。In addition, 14 in the figure is a metal back. The image tube of the present invention has the same structure as the conventional example (FIGS. 1 and 2) except that the output surface 9 is coated with the Ti thin film 13 as described above.
Detailed explanation will be omitted.
この発明のイメージ管は上記説明及び図示のように構成
され、2次電子増倍板3の出力面9はTi薄膜13によ
り被覆されているため、発生したイオンが出力面9と出
力蛍光面4の間にかかつている電界によってTi薄膜1
3に引き寄せられる。The image tube of the present invention is constructed as described above and shown in the drawings, and the output surface 9 of the secondary electron multiplier plate 3 is covered with the Ti thin film 13, so that the generated ions are transferred to the output surface 9 and the output phosphor screen 4. The electric field applied between the Ti thin film 1
I'm drawn to 3.
そして高エネルギーでTi薄膜13に衝突することによ
ってTiが飛び、その際管内の放出ガスが吸着され真空
度が良くなる。Then, Ti is blown off by colliding with the Ti thin film 13 with high energy, and at this time, released gas inside the tube is adsorbed, improving the degree of vacuum.
この結果、イメージ管は特性的に安定し、且つ寿命も長
くなる。As a result, the image tube has stable characteristics and a long life.
なお、イオンの衝突によりTiがスパッタリングされ、
一部は蛍光面のメタルバック面に付着するおそれがある
が、Tiは比較的に電子透過性が良い金属の部類に属す
るため、出力蛍光面の明るさに悪影響を及ぼすことはな
い。Note that Ti is sputtered due to ion collision,
Although some of the Ti may adhere to the metal back surface of the phosphor screen, since Ti belongs to a metal category that has relatively good electron transparency, it will not adversely affect the brightness of the output phosphor screen.
第1図は従来及びこの発明を説明するために用いるイメ
ージ管を示す断面図、第2図は従来のイメージ管におけ
る2次電子増倍板を拡大して示す断面図、第3図はこの
発明の一実施例に係るイメージ管の要部(2次電子増倍
板附近)を示す断面図である。
3・・・・・・2次電子増倍板、9・・・・・・出力面
、13・・・・・・Ti薄膜。FIG. 1 is a cross-sectional view showing a conventional image tube and a conventional image tube used to explain the present invention, FIG. 2 is a cross-sectional view showing an enlarged secondary electron multiplier in a conventional image tube, and FIG. FIG. 2 is a sectional view showing a main part (near a secondary electron multiplier plate) of an image tube according to an embodiment of the present invention. 3... Secondary electron multiplier plate, 9... Output surface, 13... Ti thin film.
Claims (1)
記2次電子増倍板の出力面をTi薄膜で被覆したことを
特徴とするイメージ管。1. An image tube incorporating a secondary electron multiplier, characterized in that the output surface of the secondary electron multiplier is coated with a Ti thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13701675A JPS5812977B2 (en) | 1975-11-14 | 1975-11-14 | image can |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13701675A JPS5812977B2 (en) | 1975-11-14 | 1975-11-14 | image can |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5261471A JPS5261471A (en) | 1977-05-20 |
| JPS5812977B2 true JPS5812977B2 (en) | 1983-03-11 |
Family
ID=15188841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13701675A Expired JPS5812977B2 (en) | 1975-11-14 | 1975-11-14 | image can |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812977B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7804990A (en) * | 1978-05-09 | 1979-11-13 | Optische Ind De Oude Delft Nv | DEVICE FOR SENSING RESIDUAL LIGHT IN THE VISIBLE AND NEAR INFRARED SPECTRUM. |
-
1975
- 1975-11-14 JP JP13701675A patent/JPS5812977B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5261471A (en) | 1977-05-20 |
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