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JPS5820135B2 - Field junction electron beam exposure equipment - Google Patents
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JPS5820135B2 - Field junction electron beam exposure equipment - Google Patents

Field junction electron beam exposure equipment

Info

Publication number
JPS5820135B2
JPS5820135B2 JP51034275A JP3427576A JPS5820135B2 JP S5820135 B2 JPS5820135 B2 JP S5820135B2 JP 51034275 A JP51034275 A JP 51034275A JP 3427576 A JP3427576 A JP 3427576A JP S5820135 B2 JPS5820135 B2 JP S5820135B2
Authority
JP
Japan
Prior art keywords
electron beam
field
pattern
beam exposure
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51034275A
Other languages
Japanese (ja)
Other versions
JPS52119078A (en
Inventor
井垣誠吾
稲垣雄史
岡部正博
古川泰男
中山範明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51034275A priority Critical patent/JPS5820135B2/en
Publication of JPS52119078A publication Critical patent/JPS52119078A/en
Publication of JPS5820135B2 publication Critical patent/JPS5820135B2/en
Expired legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 本発明は電子ビーム露光装置、さらに詳しくは図形合成
などの手段によって大面積パターンを露光するに用いる
フィールド接合電子ビーム露光装置に関するものである
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure apparatus, and more particularly to a field junction electron beam exposure apparatus used for exposing large area patterns by means such as graphic synthesis.

一般に集積回路製造工程の中でフォトリングラフイーは
重要な技術であり現在まで急速な発展をとげてきたので
あるが光の波長約0.3μmによって制約のあることか
ら1〜2μm以下のパターン製作が困難である。
In general, photophosphorography is an important technology in the integrated circuit manufacturing process and has achieved rapid development until now, but it is limited by the wavelength of light of about 0.3 μm, so it can only be used to fabricate patterns of 1 to 2 μm or less. is difficult.

ところが電子ビームや軟X線を用いる露光法は波長が前
者において約0.01nmであり後者の波長が約0.4
〜1.4 nmであることから光の回折現象による解像
の劣化が無視できるので集積回路の高密度化によって要
求される一1nm以下の加工において極めて有力な方法
として注目されるようになった。
However, in exposure methods that use electron beams or soft X-rays, the wavelength of the former is approximately 0.01 nm, and the wavelength of the latter is approximately 0.4 nm.
Since the resolution is ~1.4 nm, deterioration in resolution due to light diffraction phenomenon can be ignored, so it has come to attract attention as an extremely effective method for processing of 1 nm or less, which is required due to the increasing density of integrated circuits. .

この電子ビームの露光方法は電子銃より飛び出した電子
をコンデンサ1/ノズによって集束した後に偏向コイル
によって偏向せしめ集束偏光された電子ビームをウェー
ハにあてて予めウェーハ上に塗布しであるレジストを露
光し現象してその上にレジストパターンを形成ししかる
のちにフォトエツチングを行なうものである。
In this electron beam exposure method, electrons ejected from an electron gun are focused by a capacitor 1/nozzle, then deflected by a deflection coil, and the focused and polarized electron beam is applied to the wafer to expose a resist that has been coated on the wafer in advance. A resist pattern is formed thereon, and then photoetching is performed.

しかしながら一般に電子ビーム露光装置においてはその
偏光領域によってきまる露光可能のフィールドに限界が
あるから1つのフィールドによって露光できない大形の
図形を露光するにあたってはこの図形をフィールドに分
解してフィールドを接合しながら露光を行なわなければ
ならない。
However, in general, in electron beam exposure equipment, there is a limit to the field that can be exposed depending on the polarization region of the device, so when exposing a large figure that cannot be exposed with one field, the figure is divided into fields and the fields are joined. exposure must be done.

かぐのごときフィールド接合においては1つのフィール
ド内、すなわちウェーハのステージ移動なしに1回で露
光しうる偏向領域内ではパターン相互間の影響を比較対
照することによってデータ作成が行なわれるが1つのパ
ターンが隣接するフィールドまで拡張されるとプロキシ
ミテイ効果によって露光量の影響が図形相互間に存在し
てデータ処理上程々の難点がある。
In field bonding such as Kaguno, data is created by comparing and contrasting the effects between patterns within one field, that is, within a deflection region that can be exposed in one go without moving the wafer stage. When extended to adjacent fields, the influence of exposure amount exists between figures due to the proximity effect, which causes some difficulty in data processing.

本発明の目的はフィールド内で露光した隣接フィールド
にまたがるパターンを接合するにあたりプロキシミディ
効果を除去するようにしたフィールド接合電子ビーム露
光装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a field joining electron beam exposure apparatus which eliminates the proximidi effect when joining patterns spanning adjacent fields exposed within a field.

この目的を達成するため、電子銃より発射された電子ビ
ームを集束偏向することにより所定のパターンを露光す
る電子ビーム露光装置において前記パターンの画かれた
図形を前記装置の偏向領域によりきまるフィールドに分
けて露光を行なうフィールド接合電子ビーム露光装置に
おいて、本発明においては1つのフィールドのパターン
を露光するにあたり該パターンが隣接フィールドにまた
がるか否かをデータ作成時に判断しまたがる場合にはそ
の前情報をデータ内に入れておき該データにより露光周
波数を変化させ露光量を調整することを特徴とするもの
である。
To achieve this purpose, an electron beam exposure device that exposes a predetermined pattern by focusing and deflecting an electron beam emitted from an electron gun divides the figure with the pattern into fields determined by the deflection area of the device. In a field junction electron beam exposure apparatus that performs exposure using a single field, in the present invention, when exposing a pattern of one field, it is determined at the time of data creation whether the pattern straddles an adjacent field, and if the pattern straddles an adjacent field, the previous information is stored in the data. It is characterized in that the exposure frequency is changed and the exposure amount is adjusted based on the data stored in the camera.

以下本発明にかかるフィールド接合電子ビーム露光装置
の実施例について図面により詳細に説明する。
Embodiments of the field junction electron beam exposure apparatus according to the present invention will be described in detail below with reference to the drawings.

第1図は本発明にかかるフィールド接合電子ビーム露光
装置であって、電子ビーム1は電子銃2によって発射さ
れビームブランキングコイル3をへて第1コンデンサレ
ンズ4、第2コンデンサレンズ5および第3コンデンサ
レンズ6によって集束されファイナルアパーチャアをへ
てウェーバ9にいたる。
FIG. 1 shows a field junction electron beam exposure apparatus according to the present invention, in which an electron beam 1 is emitted by an electron gun 2, passes through a beam blanking coil 3, and passes through a first condenser lens 4, a second condenser lens 5, and a third condenser lens. The light is focused by the condenser lens 6, passes through the final aperture, and reaches the webber 9.

ファイナルアパーチャの上部あるいは下部に偏向コイル
8がある。
There is a deflection coil 8 above or below the final aperture.

一方において入力テープの情報はコンピュータ21に入
力されその出力はモータ駆動回路22を介してパルスモ
ータ23を駆動することによりウェーバ11を移動され
るとともに他の出力は走査部24に印加されその出力は
偏向増幅回路25をへて偏向コイル8に偏向情報をあた
えるとともにブランキング回路26をへてブランキング
コイル3に点滅情報をあたえるものである。
On the other hand, the information of the input tape is input to the computer 21, and its output is moved through the weber 11 by driving the pulse motor 23 via the motor drive circuit 22, and the other output is applied to the scanning section 24, and the output is Deflection information is applied to the deflection coil 8 through the deflection amplifier circuit 25, and blinking information is applied to the blanking coil 3 through the blanking circuit 26.

ここにおいて本発明は第2図に示すようにパターン図形
A、B、C,・・・中敷フィールドF1.F2゜・・・
Fn、・・・にまたがるパターン図形Bのデータを作成
するにあたり図形Bに関連して両フィールドにまたがる
旨の情報を入れ該図形Bのフィールド境界付近の番地の
クロックパルスの周波数を変化させる。
In this case, the present invention provides pattern figures A, B, C, . . . insole fields F1, . . . as shown in FIG. F2゜...
When creating data for a pattern figure B that spans Fn, . . . , information indicating that it straddles both fields is entered in relation to the figure B, and the frequency of the clock pulse at an address near the field boundary of the figure B is changed.

そうするとコンピュータ21は偏向コイル8およびブラ
ンキングコイル3に印加させるクロックパルスの周波数
を変化させこれによって露光量を変化させる。
Then, the computer 21 changes the frequency of the clock pulse applied to the deflection coil 8 and the blanking coil 3, thereby changing the exposure amount.

第3図はフィールド接合されたパターン図形Bの1つの
実施例であって、第3図においてAは従来技術によって
得られた接合パターン、第3図のBは本発明においてパ
ターン図形Bの境界付近の番地の露光周波数を低ぐして
露光量を調整しプロキシミテイ効果を除いた例である。
FIG. 3 shows one embodiment of a field-joined pattern figure B, in which A is a bonding pattern obtained by the prior art, and B in FIG. 3 is near the boundary of pattern figure B in the present invention. This is an example in which the exposure frequency of the address is lowered and the exposure amount is adjusted to eliminate the proximity effect.

以上本発明にかかる装置について詳細に説明したが要す
るに本発明は両フィールドにまたがるパターン図形のデ
ータを作成するにあたり両フィールドにまたがる旨の情
報によりフィールド境界付近の番地のクロックパルスの
周波数を変化することにより露光量を調整してプロキシ
ミテイ効果を除去したものであり、本発明においてはラ
ンタ弘走査方式の駆動回路を1例にとって説明したが本
発明にかかる思想はこの実施例に限定されるものでない
ことは勿論である。
The apparatus according to the present invention has been described in detail above, but in short, the present invention is to change the frequency of the clock pulse at an address near the field boundary based on information indicating that the data spans both fields when creating data for a pattern figure that spans both fields. The exposure amount is adjusted to remove the proximity effect, and although the present invention has been explained using a Ranta-Hiroshi scanning type drive circuit as an example, the idea of the present invention is not limited to this embodiment. Of course.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明にかかるフィールド接合型電子露光装置
のブロックダイアグラム、第2図は本発明の装置におい
て露光すべきパターン図形、第3図は本発明の装置によ
る露光によって得られたパターン図形を従来の装置によ
って得られたものと比較して示した図である。 図において3がブランキングコイル、8が偏向コイル、
20が入力テープ、21がコンピュータ、24が走査制
御部である。 89−
FIG. 1 is a block diagram of a field junction type electronic exposure apparatus according to the present invention, FIG. 2 is a pattern figure to be exposed by the apparatus of the present invention, and FIG. 3 is a block diagram of a pattern figure obtained by exposure using the apparatus of the present invention. It is a figure shown in comparison with what was obtained by the conventional apparatus. In the figure, 3 is a blanking coil, 8 is a deflection coil,
20 is an input tape, 21 is a computer, and 24 is a scanning control section. 89-

Claims (1)

【特許請求の範囲】[Claims] 1 電子銃より発射された電子ビームを集束偏向するこ
とにより所定のパターンを露光する電子ビーム露光装置
において前記パターンの画かれた図形を前記装置の偏向
領域によりきまるフィールドに分けて露光を行なうフィ
ールド接合電子ビーム露光装置[おいて、1つのフィー
ルドのパターンを露光するにあたり該パターンが隣接フ
ィールドにまたがるか否かをデータ作成時に判断しまた
がる場合にはその旨の情報をデータ内に入れておき該デ
ータにより露光周波数を変化させ露光量を調整すること
を特徴とするフィールド接合電子ビーム露光装置。
1. Field junction, in which the figure on which the pattern is drawn is divided into fields determined by the deflection area of the device in an electron beam exposure device that exposes a predetermined pattern by focusing and deflecting an electron beam emitted from an electron gun. In an electron beam exposure system, when exposing a pattern in one field, it is determined at the time of data creation whether the pattern straddles an adjacent field, and if it does, information to that effect is included in the data and the data is A field junction electron beam exposure apparatus characterized in that the exposure frequency is changed to adjust the exposure amount.
JP51034275A 1976-03-31 1976-03-31 Field junction electron beam exposure equipment Expired JPS5820135B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51034275A JPS5820135B2 (en) 1976-03-31 1976-03-31 Field junction electron beam exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51034275A JPS5820135B2 (en) 1976-03-31 1976-03-31 Field junction electron beam exposure equipment

Publications (2)

Publication Number Publication Date
JPS52119078A JPS52119078A (en) 1977-10-06
JPS5820135B2 true JPS5820135B2 (en) 1983-04-21

Family

ID=12409600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51034275A Expired JPS5820135B2 (en) 1976-03-31 1976-03-31 Field junction electron beam exposure equipment

Country Status (1)

Country Link
JP (1) JPS5820135B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10902537B2 (en) 2016-11-23 2021-01-26 Electronics And Telecommunications Research Institute Method of processing logistics information, logistics information processing server using the same, and logistics managing apparatus using the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580318A (en) * 1978-12-12 1980-06-17 Fujitsu Ltd Electron-beam exposure
JPS57167626A (en) * 1981-03-31 1982-10-15 Fujitsu Ltd Electron beam exposure equipment
JPS57161900U (en) * 1981-04-03 1982-10-12
JP3340387B2 (en) 1998-05-29 2002-11-05 株式会社日立製作所 Electron beam drawing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10902537B2 (en) 2016-11-23 2021-01-26 Electronics And Telecommunications Research Institute Method of processing logistics information, logistics information processing server using the same, and logistics managing apparatus using the same

Also Published As

Publication number Publication date
JPS52119078A (en) 1977-10-06

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