JPS582197B2 - Gate valve - Google Patents
Gate valveInfo
- Publication number
- JPS582197B2 JPS582197B2 JP15675A JP15675A JPS582197B2 JP S582197 B2 JPS582197 B2 JP S582197B2 JP 15675 A JP15675 A JP 15675A JP 15675 A JP15675 A JP 15675A JP S582197 B2 JPS582197 B2 JP S582197B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- gate valve
- single crystal
- inner periphery
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 239000012768 molten material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Sliding Valves (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
本発明はるつぼ内で加熱された溶融物質から支持具に固
定された種結晶について成長する結晶体、特にはゲルマ
ニウム、シリコン等の半導体単結晶を引上げる装置にお
けるゲートバルブの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gate valve in an apparatus for pulling a crystal, particularly a semiconductor single crystal such as germanium or silicon, grown from a molten material heated in a crucible using a seed crystal fixed to a support. It is related to the structure of
従来、半導体単結晶のマルチ・プーリングを行なうに当
り、結晶棒の取出しおよびるつぼ内への原料の再充填を
行う上にゲートバルブが必要であることが知られており
、このゲートバルブは通常るつぼを取囲んで設けた、例
えばつり鐘形のステンレスチャンバーの上方開口部の上
部に配置されている。Conventionally, when performing multi-pooling of semiconductor single crystals, it is known that a gate valve is required to take out the crystal rod and refill the raw material into the crucible. It is disposed above the upper opening of a bell-shaped stainless steel chamber that surrounds the chamber.
しかしながら、この種従来のゲートバルブは上記チャン
バーの開口部を閉鎖するために、単に板状シャッターが
移動するだけの簡単な溝造であるので、このシャッター
の裏面やバルブの内部に溶融物質の蒸気、例えばＳｉＯ
２が付着しやすく、この付着物質がバルブの開閉操作時
に機械的振動に伴なって剥落したり、あるいは摺動面に
おいて削り取られ、るつぼ内の溶融物質中に飛込んで単
結晶の成長を著しく妨げるという不利があった。However, this type of conventional gate valve has a simple groove structure in which a plate-shaped shutter simply moves to close the opening of the chamber, so vapor of molten material can be deposited on the back side of the shutter or inside the valve. , for example SiO
2 easily adheres, and this adhered substance may peel off due to mechanical vibration during valve opening/closing operations, or be scraped off on the sliding surface, and fly into the molten material in the crucible, significantly inhibiting the growth of single crystals. It had the disadvantage of being a hindrance.
本発明は上記従来装置における不利を解決すべく提案さ
れた新規かつ改良された構造のゲートバルブに関するも
のであって、これは平行に配置した上下フランジの周囲
を側壁で取囲んでなる箱体の該上下フランジのそれぞれ
に引上単結晶棒等を通過させるだめの開口部を設けると
共に、該箱体内に該下フランジ内面を摺動して該開口部
を閉鎖する板状シャッターを備えてなる溶融体るつぼを
収容した筒形チャンバー上部の開口部上方に設置される
半導体単結晶引上装置のゲートバルブにおいて、該上フ
ランジの開口部内周に不活性ガスを下方に向って円筒状
に噴出する環状スリットを設けると共に、該下フランジ
の開口部内周に不活性ガスを開口部中心に向って水平に
噴出する小孔を等間隔をおいて多数個設けて成ることを
特徴とするものである。The present invention relates to a gate valve with a new and improved structure proposed to solve the disadvantages of the conventional devices described above, and this invention consists of a box-like structure having side walls surrounding upper and lower flanges disposed in parallel. The upper and lower flanges each have an opening through which the pulled single crystal rod or the like passes, and a plate-shaped shutter that slides on the inner surface of the lower flange inside the box body to close the opening. In a gate valve of a semiconductor single crystal pulling apparatus installed above an opening in the upper part of a cylindrical chamber housing a body crucible, an annular gate valve is used to eject inert gas downward into the inner periphery of the opening of the upper flange in a cylindrical shape. In addition to providing a slit, a large number of small holes are provided at equal intervals on the inner periphery of the opening of the lower flange, through which inert gas is ejected horizontally toward the center of the opening.
つぎに、上記本発明の装置を例示する図面に基づいて詳
細に説明する。Next, the apparatus of the present invention will be described in detail based on drawings illustrating the apparatus of the present invention.
図面は本発明装置の一実施態様を示すものであって、第
１図は本発明のゲートバルブを組込んだ半導体単結晶引
上装置の概略構成を示し、第２図はゲートバルブの詳細
を示す断面図である。The drawings show one embodiment of the device of the present invention, and FIG. 1 shows a schematic configuration of a semiconductor single crystal pulling device incorporating the gate valve of the present invention, and FIG. 2 shows details of the gate valve. FIG.
第１図から明らかなように、本発明になるゲートバルプ
１は、例えばステンレス製円筒からなるチャンバー２の
上方開口部３の上方に設置される。As is clear from FIG. 1, the gate valve 1 according to the present invention is installed above the upper opening 3 of a chamber 2 made of, for example, a stainless steel cylinder.
第２図に示すように、本発明のゲートバルブ１は上記チ
ャンバーの上方開口部３に固定される下フランジ４と単
結晶棒を引上げるための小径筒状体を固定する上フラン
ジ５とを平行に配置し、これら両フランジの周囲を側壁
６で取囲んでなる箱体から構成される。As shown in FIG. 2, the gate valve 1 of the present invention has a lower flange 4 fixed to the upper opening 3 of the chamber and an upper flange 5 fixed to a small diameter cylindrical body for pulling up a single crystal rod. It is composed of a box body which is arranged in parallel and has both flanges surrounded by a side wall 6.
上記箱体の上下両フランジ４、５には引上単結晶棒を通
過させるための開口部７、８がそれぞれ形成され、また
上記箱体内部には、下フランジ４の内面上を移行して上
記開口部７を閉鎖するための板状シャッター９が内蔵さ
れる。Openings 7 and 8 are formed in both the upper and lower flanges 4 and 5 of the box body, respectively, through which the pulled single crystal rod passes. A plate-shaped shutter 9 for closing the opening 7 is built-in.
そしてシャッター９は、そのほぼ中央に枢着したアーム
１０，１０′を介して、ハンドル１１を回転することに
より開閉動作が行なわれる。The shutter 9 is opened and closed by rotating a handle 11 via arms 10 and 10' pivotally mounted approximately at the center thereof.
本発明のゲートバルブにおいて最も重要な部分は、上記
上下７ランジに設けた開口部内周の構造にあって、上記
上フランジ５の開口部内周には段部１２を形成すると共
に、この段部１２に逆Ｌ字形断面を有するリング１３を
嵌着することによって、上記段部１２の下端とリング１
３の下端との間に環状スリット１４を形成し、この環状
スリツト６から、通路１５を経て環状空間１６に送り込
まれた不活性ガスを下方に向って円筒状に噴出するよう
にされている。The most important part of the gate valve of the present invention is the structure of the inner periphery of the opening provided in the upper and lower 7 flanges. By fitting the ring 13 having an inverted L-shaped cross section to the lower end of the stepped portion 12 and the ring 1
An annular slit 14 is formed between the annular slit 6 and the lower end of the annular slit 6, and the inert gas sent into the annular space 16 through the passage 15 is ejected downward in a cylindrical shape.
一方、下フランジ４の開口部内周には、やはり段部１７
を形成すると共に、この段部１７にＬ字形断面を有する
リング１８を嵌着することによって、段部１７とリング
１８との間に環状空間１９を形成し、上記リング１８の
周面に等間隔をおいて設けた多数の小孔２０から、通路
２１を経て環状空間１９に送り込まれた不活性ガスを開
口部７の中心に向って水平に噴出するようにされている
。On the other hand, the inner periphery of the opening of the lower flange 4 also has a stepped portion 17.
At the same time, by fitting a ring 18 having an L-shaped cross section to this step 17, an annular space 19 is formed between the step 17 and the ring 18, and a ring 18 is formed at equal intervals on the circumferential surface of the ring 18. The inert gas sent into the annular space 19 through the passage 21 is ejected horizontally toward the center of the opening 7 from a large number of small holes 20 provided at intervals.
上記した上フランジ開口部内周の環状スリット１４およ
び下フランジ開口部内周の多数の小孔２０は、それぞれ
不活性ガスカーテンを作るためのものであって、このガ
スカーテンはゲートバルブの下方に位置するチャンバー
内において、るつぼ内の溶融体から生じる蒸気から、ゲ
ートバルブを効果的に保護することができる。The annular slit 14 on the inner periphery of the upper flange opening and the large number of small holes 20 on the inner periphery of the lower flange opening are each used to create an inert gas curtain, and this gas curtain is located below the gate valve. Within the chamber, the gate valve can be effectively protected from vapors originating from the melt in the crucible.
すなわち、いま一回の半導体単結晶棒の引上げ操作を完
了し、ハンドル１１を回動してシャッター９を第２図実
線位置に移行させて開口部７を閉鎖したときは、チャン
バー内部から上昇してくる例えばＳｉＯ２が上記下フラ
ンジ開口部内周の小孔２０から噴出する例えばアルゴン
ガスによって形成されたガスカーテンの存在により効果
的にさえぎられ、シャッター９の裏面に対するＳｉＯ２
の付着が防止され、また、シャッター９が開いたときは
、上記フランジ開口部のガスカーテンおよび上フランジ
開口部内周に設けた環状スリット１４から噴出するガス
により下方に向って形成される円筒状ガスカーテンによ
って、上昇してくるＳｉＯ２のゲートバルブ内部への侵
入は効果的に防止されるのである、。That is, when the pulling operation of the semiconductor single crystal rod is completed one more time and the handle 11 is rotated to move the shutter 9 to the position shown by the solid line in FIG. For example, SiO2 is effectively blocked by the presence of a gas curtain formed by, for example, argon gas that is ejected from the small hole 20 on the inner periphery of the lower flange opening, and the SiO2 against the back surface of the shutter 9 is effectively blocked.
Also, when the shutter 9 is opened, a cylindrical gas is formed downward by the gas jetted from the gas curtain of the flange opening and the annular slit 14 provided on the inner periphery of the upper flange opening. The curtain effectively prevents rising SiO2 from entering the inside of the gate valve.
以上説明した通り、本発明になるゲートバルプにおいて
は、従来この種ゲートバルブにおいて欠点とされていた
シャッター裏面およびゲートバルブ内部に対するＳｉＯ
２等の付着を完全に防止することができ、これによって
引上単結晶棒の品質向上およびその生産性の向上をはか
ることができるというすぐれた作用効果が与えられる。As explained above, in the gate valve of the present invention, SiO2 is removed from the back surface of the shutter and the inside of the gate valve, which has been considered a drawback in conventional gate valves of this type.
It is possible to completely prevent the adhesion of particles such as No. 2, etc., thereby providing an excellent effect of improving the quality of the pulled single crystal rod and improving its productivity.
第１図は本発明のゲートバルブの配置を説明するだめの
半導体単結晶引上装置の概略構成を示す線図、第２図は
本発明のゲートバルブの一実施態様を示す概略断面図で
ある。
１・・・ゲートバルブ、２・・・チャンバー、３・・・
開口部、４・・・下フランジ、５・・・上フランジ、６
・・・側壁、７，８・・・開口部、９・・・シャッター
、１０・・・アーム、１１・・・ハンドル、１２・・・
段部、１３・・・リング、１４・・・環状スリット、１
５・・・通路、１６・・・環状空間、１７・・・段部、
１８・・・リング、１９・・・環状空間、２０・・・小
孔、２１・・・通路。FIG. 1 is a diagram showing a schematic configuration of a semiconductor single crystal pulling apparatus for explaining the arrangement of the gate valve of the present invention, and FIG. 2 is a schematic cross-sectional view showing an embodiment of the gate valve of the present invention. . 1... Gate valve, 2... Chamber, 3...
Opening, 4...Lower flange, 5...Upper flange, 6
...Side wall, 7, 8...Opening, 9...Shutter, 10...Arm, 11...Handle, 12...
Stepped portion, 13...Ring, 14...Annular slit, 1
5... Passage, 16... Annular space, 17... Step part,
18... Ring, 19... Annular space, 20... Small hole, 21... Passage.
Claims (1)
でなる箱体の該上下フランジのそれぞれに、引上単結晶
棒等を通過させるだめの開口部を設けると共に、該箱体
内に該下フランジ内面を摺動して該開口部を閉鎖する板
状シャッターを備えてなる、溶融体るつぼを収容した筒
形チャンバー上部の開口部上方に設置される半導体単結
晶引上装置のゲートバルブにおいて、該上フランジの開
口部内周に不活性ガスを下方に向って円筒状に噴出する
環状スリットを設けると共に、該下フランジの開口部内
周に不活性ガスを開口部中心に向って水平に噴出する小
孔を等間隔をおいて多数個設けて成ることを特徴とする
半導体単結晶引上装置におけるゲートバルブ。1. An opening for passing a pulled single crystal rod, etc. is provided in each of the upper and lower flanges of a box body formed by surrounding the upper and lower flanges arranged in parallel with side walls, and the lower flange is placed inside the box body. In a gate valve of a semiconductor single crystal pulling apparatus installed above an opening in the upper part of a cylindrical chamber housing a melt crucible, the gate valve is equipped with a plate-shaped shutter that slides on the inner surface to close the opening. An annular slit is provided on the inner periphery of the opening of the upper flange for ejecting inert gas downward in a cylindrical shape, and a small hole is provided on the inner periphery of the opening of the lower flange for ejecting inert gas horizontally toward the center of the opening. A gate valve for a semiconductor single crystal pulling apparatus, characterized in that a large number of gate valves are provided at equal intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15675A JPS582197B2 (en) | 1974-12-27 | 1974-12-27 | Gate valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15675A JPS582197B2 (en) | 1974-12-27 | 1974-12-27 | Gate valve |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5177064A JPS5177064A (en) | 1976-07-03 |
| JPS582197B2 true JPS582197B2 (en) | 1983-01-14 |
Family
ID=11466169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15675A Expired JPS582197B2 (en) | 1974-12-27 | 1974-12-27 | Gate valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS582197B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826095A (en) * | 1981-07-31 | 1983-02-16 | Toshiba Ceramics Co Ltd | Pulling apparatus for single crystal silicon |
| JP2533686B2 (en) * | 1990-10-19 | 1996-09-11 | コマツ電子金属株式会社 | Semiconductor single crystal manufacturing equipment |
-
1974
- 1974-12-27 JP JP15675A patent/JPS582197B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5177064A (en) | 1976-07-03 |
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