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JPS5824010B2 - Method for aligning aperture plates with rectangular electron beam passing apertures - Google Patents
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JPS5824010B2 - Method for aligning aperture plates with rectangular electron beam passing apertures - Google Patents

Method for aligning aperture plates with rectangular electron beam passing apertures

Info

Publication number
JPS5824010B2
JPS5824010B2 JP55077975A JP7797580A JPS5824010B2 JP S5824010 B2 JPS5824010 B2 JP S5824010B2 JP 55077975 A JP55077975 A JP 55077975A JP 7797580 A JP7797580 A JP 7797580A JP S5824010 B2 JPS5824010 B2 JP S5824010B2
Authority
JP
Japan
Prior art keywords
electron beam
aperture
aperture plate
rectangular opening
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55077975A
Other languages
Japanese (ja)
Other versions
JPS574123A (en
Inventor
沖野輝昭
後藤英一
出沢正徳
相馬嵩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, RIKEN filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55077975A priority Critical patent/JPS5824010B2/en
Publication of JPS574123A publication Critical patent/JPS574123A/en
Publication of JPS5824010B2 publication Critical patent/JPS5824010B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 本発明は夫々に矩形状電子線通過開口を有した第1と第
2のアパーチャ板と該アパーチャ板の間に設けられた電
子線偏向手段とによって整形された電子線を被露光材料
上に投射するようにした電子線露光装置に使用する該ア
パーチャ板の整列方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for applying a shaped electron beam using first and second aperture plates each having a rectangular electron beam passage aperture and an electron beam deflecting means provided between the aperture plates. The present invention relates to a method for aligning an aperture plate used in an electron beam exposure apparatus that projects an image onto an exposure material.

第1図は本発明が実施される電子線露光装置の一例を示
すもので、1は電子銃である。
FIG. 1 shows an example of an electron beam exposure apparatus in which the present invention is implemented, and 1 is an electron gun.

該電子銃1から発生した電子線は収束レンズ2によって
矩形状開口3を有した第1のアパーチャ板4上に投射さ
れる。
An electron beam generated from the electron gun 1 is projected by a converging lens 2 onto a first aperture plate 4 having a rectangular aperture 3.

該開口3を通過した電子線は静電型偏向器5によって適
宜偏向され、電子レンズ4Lによって矩形状開口6を有
した第2のアパーチャ板7上に投射される。
The electron beam passing through the aperture 3 is appropriately deflected by an electrostatic deflector 5 and projected onto a second aperture plate 7 having a rectangular aperture 6 by an electron lens 4L.

この結果該第2の開口6を通過する電子線の断面形状は
該偏向器5による電子線の偏向量に応じて可変となり、
該開口6を通過した電子線は投影レンズ8によって被露
光材料9上に照射される。
As a result, the cross-sectional shape of the electron beam passing through the second aperture 6 becomes variable depending on the amount of deflection of the electron beam by the deflector 5.
The electron beam that has passed through the aperture 6 is irradiated onto a material to be exposed 9 by a projection lens 8 .

該材料9上の電子線照射位置は偏向器10によって変え
られ、従って該材料9上には所望形状の図形が露光され
る。
The electron beam irradiation position on the material 9 is changed by a deflector 10, so that a desired shape is exposed on the material 9.

さて上述した構成の装置において材料9上に例えば第2
図aに示す如き細長い長方形の図形りを露光する場合、
第1及び第2のアパーチャ板4及び7と偏向器5とによ
って第2図すに示す矩形状の電子線S1を形成して材料
9上に投射し、該電子線S1を図中矢印方向に走査して
電子線S2.S3゜・・・・・・Snを材料上に投射し
、図形りを露光するようにしている。
Now, in the apparatus having the above-mentioned structure, for example, a second
When exposing an elongated rectangular shape as shown in figure a,
The first and second aperture plates 4 and 7 and the deflector 5 form a rectangular electron beam S1 shown in FIG. Scanning and electron beam S2. S3゜...Sn is projected onto the material to expose the pattern.

この場合矩形状電子線51(S2・・・・・・Sn)の
一辺が電子線の走査方向に平行であれば、各電子線によ
る平行露光図形間の継ぎ合わせが精確に行い得精度良く
図形りが露光される。
In this case, if one side of the rectangular electron beam 51 (S2 . is exposed.

しかしながら第2図Cに示す電子線R1の如くその矩形
状断面の辺と電子線の走査方向との平行度が悪い場合に
は電子線を走査してR2,R3・・・・・・Rnを材料
上に投射しても各電子線による単位露光図形間の継ぎ合
わせを精確に行うことはできず、精度良く図形りを露光
できない。
However, when the parallelism between the sides of the rectangular cross section and the scanning direction of the electron beam is poor, such as the electron beam R1 shown in FIG. Even if the electron beams are projected onto a material, it is not possible to accurately join the unit exposed figures by each electron beam, and the figures cannot be exposed with high precision.

上述した点に鑑み、材料の露光を開始する前に電子線の
走査方向(X方向及びY方向)に対して第1及び第2の
矩形状電子線通過開口3及び6の各辺が平行となるよう
に第1及び第2のアパーチャ板を整列させねばならない
In view of the above points, each side of the first and second rectangular electron beam passing openings 3 and 6 is made parallel to the electron beam scanning direction (X direction and Y direction) before starting exposure of the material. The first and second aperture plates must be aligned so that the first and second aperture plates are aligned.

従来この整列は被露光材料のステージの一部に第3図に
示すファラデーケージ11と該ケージ11の上部に導電
性ワイヤー12とを配置し、該ワイヤー12の直線状端
部Wに直交する方向に矩形断面の電子線EBを走査する
ことによって行っている。
Conventionally, this alignment is performed by arranging a Faraday cage 11 shown in FIG. This is done by scanning an electron beam EB with a rectangular cross section.

該電子線の走査によってケージ11から得られる信号は
、電子線EBがワイヤ12によって遮蔽されるに従って
その強度が減少し、第4図aに示す信号が得られる。
The intensity of the signal obtained from the cage 11 by scanning the electron beam decreases as the electron beam EB is shielded by the wire 12, and the signal shown in FIG. 4a is obtained.

第3図中実線の信号は電子線の辺がワイヤーの直線状端
部Wと略平行な第3図中実線で示す電子線EBによるも
ので、破線の信号は電子線の辺と端部Wとの平行度が不
良な第3図中破線で示す電子線EB’によるものであり
、該電子線EB’による信号強度は緩やかに減少する。
The signal shown by the solid line in FIG. 3 is due to the electron beam EB shown by the solid line in FIG. This is due to the electron beam EB' shown by the broken line in FIG. 3, which has poor parallelism with the electron beam EB', and the signal intensity due to the electron beam EB' gradually decreases.

第4図aの信号を微分すれば、第4図すの信号が得られ
更に微分することによって第4図Cの信号が得られる。
By differentiating the signal shown in FIG. 4A, the signal shown in FIG. 4S is obtained, and by further differentiation, the signal shown in FIG. 4C is obtained.

該第4図Cの信号のピークの高さは電子線の辺とワイヤ
端部Wとの平行度が良くなるにつれて高くなる。
The height of the peak of the signal in FIG. 4C increases as the parallelism between the side of the electron beam and the wire end W improves.

このことから該ピークの高さが最大となるように第1図
に示した装置のアパーチャ板4及び7を回転させれば電
子線の各辺が、走査方向(XあるいはY方向)に平行と
なるように調整できる訳である。
From this, if the aperture plates 4 and 7 of the apparatus shown in FIG. 1 are rotated so that the height of the peak is maximized, each side of the electron beam will be parallel to the scanning direction (X or Y direction). It can be adjusted as desired.

ここで第5図は第1の開口3と第2の開口6と材料上に
投射される電子線EBとの関係を示しており、偏向器5
による開口3と開口6との重ね合せの程度によって電子
線EBの形状、大きさが変えられる。
Here, FIG. 5 shows the relationship between the first aperture 3, the second aperture 6, and the electron beam EB projected onto the material.
The shape and size of the electron beam EB can be changed depending on the degree of overlapping of the apertures 3 and 6.

さて、アパーチャ板4を回転させた場合、該アパーチャ
板4の回転中心が開口3の中心G(光軸)と一致してお
れば、第4図Cのピーク信号の高さは該開口3の辺とワ
イヤ一端部Wとの平行度のみに略依存して変化する。
Now, when the aperture plate 4 is rotated, if the rotation center of the aperture plate 4 coincides with the center G (optical axis) of the aperture 3, the height of the peak signal in FIG. It changes approximately depending only on the parallelism between the side and the one end W of the wire.

しかしながら通常アパーチャ板4の回転中心は開口3の
中心とは異っており、例えばアパーチャ板4の回転中心
がCの場合数アパーチャ板4を回転させると開口3は第
5図中破線で示す如くなり、開口3と開口4とによって
整形される電子線の形状及び大きさは、大きく変化して
しまう。
However, the center of rotation of the aperture plate 4 is usually different from the center of the aperture 3. For example, if the center of rotation of the aperture plate 4 is C, then by rotating the aperture plate 4 several times, the aperture 3 will be as shown by the broken line in FIG. Therefore, the shape and size of the electron beam shaped by the apertures 3 and 4 change greatly.

この結果第4図Cのピークの高さは上述した平行度のみ
には依存しないことになり、開口3の各辺すなわち材料
に投射される電子線の各辺を該電子線の走査方向と平行
に整列させることは困難となる。
As a result, the height of the peak in FIG. It will be difficult to align them.

本発明は上述した点に鑑みてなされたもので、各アパー
チャ板の回転中心が開口の中心と一致していない場合で
も、正確に該アパーチャ板を整列させることができる方
法を提供するものである。
The present invention has been made in view of the above-mentioned points, and provides a method that can accurately align aperture plates even when the rotation center of each aperture plate does not coincide with the center of the opening. .

本発明の一実施例においては、第2のアパーチャ板7に
設けられた電子線通過開口6の各辺の長さが第1のアパ
ーチャ板4に設けられた開口3の辺の長さより2倍の大
きさにされる。
In one embodiment of the present invention, the length of each side of the electron beam passing aperture 6 provided in the second aperture plate 7 is twice the length of each side of the aperture 3 provided in the first aperture plate 4. is made to the size of

まず第1のアパーチャ板4を整列させる場合には第6図
に示す如く第1の開口3を通過した電子線の全てが、第
2の開口6を通過するように偏向器5に信号が供給され
、該開口6を通過した電子線は第3図に示すワイヤー1
2の直線状端部Wに直交する方向に偏向器10によって
走査される。
First, when aligning the first aperture plates 4, a signal is supplied to the deflector 5 so that all of the electron beams that have passed through the first aperture 3 pass through the second aperture 6, as shown in FIG. The electron beam passing through the aperture 6 is connected to the wire 1 shown in FIG.
is scanned by the deflector 10 in a direction perpendicular to the straight end W of 2.

ここでアパーチャ板4(開口3)を回転させた場合、ア
パーチャ板4の回転中心と開口3の中心(光軸)とが一
致していなくても、第1の開口3を通過した電子線は全
て第2の開口を通過するため、電子線の形状、大きさに
は変化がなく、従って第4図Cに示す信号のピークの高
さは第1の開口の辺と端部Wとの平行度のみに依存する
ため、該ピークの高さが最も高くなるようにアパーチャ
板4を回転させれば、該第1の開口3の各辺が電子線の
走査方向に平行に整列されることになる。
If the aperture plate 4 (aperture 3) is rotated here, even if the rotation center of the aperture plate 4 and the center (optical axis) of the aperture 3 do not coincide, the electron beam passing through the first aperture 3 Since all the electron beams pass through the second aperture, there is no change in the shape or size of the electron beam. Therefore, the height of the signal peak shown in FIG. 4C is parallel to the side of the first aperture and the end W. Therefore, if the aperture plate 4 is rotated so that the height of the peak becomes the highest, each side of the first aperture 3 will be aligned parallel to the scanning direction of the electron beam. Become.

上述した第1のアパーチャ板の整列が終了した後、偏向
器5に信号を供給し第7図に示す如く第1の開口3を通
過した電子線の一部を第2のアパーチャ板によって遮蔽
し、ワイヤー12の直線状端部Wと平行にすべき第2の
開口6の一辺によって該開口を通過した電子線の矩形断
面の一辺のみを整形する。
After the above-described alignment of the first aperture plates is completed, a signal is supplied to the deflector 5, and as shown in FIG. 7, a part of the electron beam passing through the first aperture 3 is blocked by the second aperture plate. , only one side of the rectangular cross section of the electron beam passing through the opening is shaped by one side of the second opening 6, which should be parallel to the linear end W of the wire 12.

(他の3つの辺は第1の開口によって整形されている。(The other three sides are shaped by the first opening.

)このような状態で第2のアパーチャ板7を回転させる
と、該第2のアパーチャ板7の回転中心と第2の開口の
中心(光軸)とが一致していなくても、第2の開口6を
通過する電子線の断面形状の大きさはほとんど変化せず
、このような電子線の走査によって得られる第4図Cの
信号のピークの高さは該第2の開口の一辺とワイヤー1
2の端部Wとの平行度に依存し、該ピークの高さが、最
も高くなるように第2のアパーチャ板を回転させれば、
該第2の開口6の各辺が電子線の走査方向に平行に整列
されることになる。
) When the second aperture plate 7 is rotated in this state, even if the rotation center of the second aperture plate 7 and the center (optical axis) of the second aperture do not coincide, the second aperture plate 7 is rotated. The size of the cross-sectional shape of the electron beam passing through the aperture 6 hardly changes, and the height of the peak of the signal shown in FIG. 1
If the second aperture plate is rotated so that the height of the peak becomes the highest depending on the parallelism with the end W of the second aperture plate,
Each side of the second aperture 6 is aligned parallel to the scanning direction of the electron beam.

このような第1と第2のアパーチャ板の整列が終了した
後、被露光材料への露光を開始すれば単位露光図形間の
継ぎ合わせを精密に行うことができ、露光精度を大巾に
向上させることができる。
After the alignment of the first and second aperture plates is completed, if the exposure of the material to be exposed is started, the unit exposure figures can be precisely joined, greatly improving exposure accuracy. can be done.

以上本発明を詳述したが、本発明は上述した実施例に限
定されることなく幾多の変形が可能である。
Although the present invention has been described in detail above, the present invention is not limited to the embodiments described above and can be modified in many ways.

例えば、第2のアパーチャ板の整列を先に行いその後第
1のアパーチャ板の整列を行うようにしても良い。
For example, the second aperture plate may be aligned first, and then the first aperture plate may be aligned.

又ワイヤーの下部にファラデーケージを設けて電子線を
検出するようにしたが例えばワイヤ一部分からの2次電
子を検出するようにしても良く、更には2次電子放出能
の異った2種の物質によって直線状の境界を形成し、該
物質からの2次電子を検出するようにしても良い。
Furthermore, although a Faraday cage is provided at the bottom of the wire to detect the electron beam, it is also possible to detect secondary electrons from a portion of the wire, or even to detect two types of electron beams with different secondary electron emission abilities. A linear boundary may be formed by a substance, and secondary electrons from the substance may be detected.

更に第1の開口に比べ第2の開口を大きく構成したが、
例えば第1の開口と第2の開口の大きさを等しく構成し
ても良く、その場合第1のアパーチャ板ト第2のアパー
チャ板との間に設けられた電子レンズによって第1の開
口による電子線像を縮少して第2のアパーチャ板上に投
影すれば良い。
Furthermore, the second opening was configured to be larger than the first opening,
For example, the first aperture and the second aperture may have the same size, in which case an electron lens provided between the first aperture plate and the second aperture plate can reduce the electrons generated by the first aperture. The line image may be reduced and projected onto the second aperture plate.

更に又上述した実施例では第4図Cに示したピーク信号
の高さが最も高くなるようにアパーチャ板を回転させ、
該アパーチャ板の整列を行ったが、例えば第4図Cの信
号から更に矩形断面の電子線の巾に対応した信号を得、
該巾に対応した信号が最小となるように、アパーチャ板
を回転させても、同様な効果が得られる。
Furthermore, in the embodiment described above, the aperture plate is rotated so that the height of the peak signal shown in FIG. 4C becomes the highest.
After aligning the aperture plates, for example, from the signal shown in FIG. 4C, a signal corresponding to the width of the electron beam with a rectangular cross section was obtained,
A similar effect can be obtained by rotating the aperture plate so that the signal corresponding to the width is minimized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明を実施する電子線露光装置の一例を示す
図、第2図は第1図の装置を使用した露光方法を説明す
るための図、第3図は被露光材料のステージ上に配置さ
れるファラデーケージと導電性ワイヤとを示す図、第4
図は第3図に示したファラデーケージの出力信号及び該
信号の微分信号を示す図、第5図は第1と第2の電子線
通過開口と整形された電子線との関係を示す図、第6図
及び第7図は本発明における第1と第2の電子線通過開
口の関係を示す図である。 1・・・・・・電子銃、2.L、8・・・・・・電子レ
ンズ、3゜6・・・・・・電子線通過開口、4,7・・
・・・・アパーチャ板、5.10・・・・・・静電型偏
向器、9・・・・・・被露光材料。
Fig. 1 is a diagram showing an example of an electron beam exposure apparatus for carrying out the present invention, Fig. 2 is a diagram for explaining an exposure method using the apparatus of Fig. 1, and Fig. 3 is a diagram showing a stage of a material to be exposed. FIG. 4 shows a Faraday cage and a conductive wire arranged in
FIG. 5 is a diagram showing the output signal of the Faraday cage shown in FIG. 3 and a differential signal of the signal; FIG. 5 is a diagram showing the relationship between the first and second electron beam passing apertures and the shaped electron beam; FIGS. 6 and 7 are diagrams showing the relationship between the first and second electron beam passing apertures in the present invention. 1... Electron gun, 2. L, 8...Electron lens, 3°6...Electron beam passing aperture, 4,7...
...Aperture plate, 5.10... Electrostatic deflector, 9... Material to be exposed.

Claims (1)

【特許請求の範囲】[Claims] 1 第1のアパーチャ板の第1の矩形状開口を通過した
電子線の全てを第2のアパーチャ板の第2の矩形状開口
を通過させ、該第2の矩形状開口を通過した電子線を直
線状の境界部を有した部材上で、該境界に略直交する方
向に走査し、該境界部によって影響された電子線を検出
し、該検出した信号に基づいて該第1のアパーチャ板を
回転させて該第1の矩形状開口の一辺と該直線状境界と
を略平行に整列させ、該第1のアパーチャ板の整列の後
あるいは前に該第1の矩形状開口を通過した電子線の一
部を該第2のアパーチャ板によって遮蔽して、前記部材
の直線状境界と平行に整列すべき該第2の矩形状開口の
辺によって該開口を通過した電子線の矩形状断面の一辺
を整形し、該第2の矩形状開口を通過した電子線を該直
線状の境界部を有した部材上で該境界に略直交する方向
に走査し、該境界部によって影響された電子線を検出し
、該検出した信号に基づいて該第2のアパーチャ板を回
転させて該第2の矩形状開口の一辺と該直線状境界とを
略平行に整列させるようにした矩形状電子線通過開口を
有したアパーチャ板の整列力も
1. All of the electron beams that have passed through the first rectangular opening of the first aperture plate are passed through the second rectangular opening of the second aperture plate, and the electron beam that has passed through the second rectangular opening is Scanning a member having a linear boundary in a direction substantially perpendicular to the boundary, detecting an electron beam influenced by the boundary, and adjusting the first aperture plate based on the detected signal. The electron beam is rotated to align one side of the first rectangular opening substantially parallel to the linear boundary, and passes through the first rectangular opening after or before alignment of the first aperture plate. A side of the rectangular cross-section of the electron beam that has passed through the opening by the side of the second rectangular opening that is to be aligned parallel to the linear boundary of the member, with a part of the opening being blocked by the second aperture plate. The electron beam passing through the second rectangular opening is scanned over the member having the linear boundary in a direction substantially perpendicular to the boundary, and the electron beam influenced by the boundary is scanned. and rotating the second aperture plate based on the detected signal so that one side of the second rectangular opening and the linear boundary are aligned substantially parallel to each other. The alignment force of the aperture plate with
JP55077975A 1980-06-10 1980-06-10 Method for aligning aperture plates with rectangular electron beam passing apertures Expired JPS5824010B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55077975A JPS5824010B2 (en) 1980-06-10 1980-06-10 Method for aligning aperture plates with rectangular electron beam passing apertures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55077975A JPS5824010B2 (en) 1980-06-10 1980-06-10 Method for aligning aperture plates with rectangular electron beam passing apertures

Publications (2)

Publication Number Publication Date
JPS574123A JPS574123A (en) 1982-01-09
JPS5824010B2 true JPS5824010B2 (en) 1983-05-18

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JP55077975A Expired JPS5824010B2 (en) 1980-06-10 1980-06-10 Method for aligning aperture plates with rectangular electron beam passing apertures

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JP (1) JPS5824010B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2592258B2 (en) * 1987-07-17 1997-03-19 富士通株式会社 Electron beam exposure system

Also Published As

Publication number Publication date
JPS574123A (en) 1982-01-09

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