JPS5826004B2 - LCD holding board - Google Patents
LCD holding boardInfo
- Publication number
- JPS5826004B2 JPS5826004B2 JP55110918A JP11091880A JPS5826004B2 JP S5826004 B2 JPS5826004 B2 JP S5826004B2 JP 55110918 A JP55110918 A JP 55110918A JP 11091880 A JP11091880 A JP 11091880A JP S5826004 B2 JPS5826004 B2 JP S5826004B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- diaminomonoamide
- diaminosiloxane
- film
- anhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 30
- -1 diaminomonoamide Chemical class 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 18
- 229920001721 polyimide Polymers 0.000 claims description 16
- 150000004985 diamines Chemical class 0.000 claims description 11
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 claims description 8
- 229920005575 poly(amic acid) Polymers 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000006798 ring closing metathesis reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Description
【発明の詳細な説明】
本発明は、液晶分子を初期状態(未励起状態)でホモジ
ニアス配向状態にしておくことが必要な液晶表示装置に
使用可能な、初期のホモジニアス配向を良質にする手段
を施した液晶挾持基板に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a means for improving the quality of initial homogeneous alignment, which can be used in liquid crystal display devices that require liquid crystal molecules to be homogeneously aligned in an initial state (unexcited state). The present invention relates to a liquid crystal holding substrate.
従来このような液晶分子の初期状態におけるホモジニア
ス配向を良好にする手段として、基板上に酸化珪素等の
斜方蒸着膜を形成する方法や、各種表面処理剤、有機高
分子等の膜を形成し、その膜をラビング処理する方法等
が知られている。Conventionally, methods for improving the homogeneous alignment of liquid crystal molecules in the initial state include forming an obliquely evaporated film of silicon oxide or the like on a substrate, or forming a film of various surface treatment agents, organic polymers, etc. , a method of rubbing the film is known.
しかしこれら公知の方法にはそれぞれ以下に述べるよう
な欠点があった。However, each of these known methods has drawbacks as described below.
すなわち、酸化珪素等の斜方蒸着膜は液晶物質の種類に
よって配向能に差があり全く配向しないような液晶物質
も存在する。That is, the orientation ability of an obliquely deposited film such as silicon oxide differs depending on the type of liquid crystal substance, and there are liquid crystal substances that do not align at all.
これは液晶の温度特性あるいは電気光学特性を改善する
ために各種の液晶を混合して使用する場合に非常に大き
な障害となる。This is a very serious problem when using a mixture of various liquid crystals to improve the temperature characteristics or electro-optical characteristics of the liquid crystal.
また、各種表面処理剤、有機高分子等の膜を形成してそ
の膜をラビング処理する方法では膜の耐熱性が低いため
に、素子組立時の加熱によって膜が劣化し、配向性が低
下する等の欠点をもつものがほとんどで、配向規制力の
耐熱性がよいのはポリイミド等の耐熱性有機高分子膜に
限られていた。In addition, in the method of forming a film of various surface treatment agents, organic polymers, etc. and then rubbing the film, the heat resistance of the film is low, so the film deteriorates due to heating during device assembly and the orientation deteriorates. Most of them have the following drawbacks, and only heat-resistant organic polymer films such as polyimide have good heat resistance for orientation regulation.
しかしながら、これらの耐熱性を有するポリイミド系高
分子においてもラビング後400’C〜450℃でガラ
スフリットシールを行なうと液晶を封入した際に配向不
良が生じやすくなる。However, even in these heat-resistant polyimide polymers, if glass frit sealing is performed at 400'C to 450C after rubbing, alignment defects tend to occur when liquid crystal is encapsulated.
特に誘起ドメインが発生し、表示特性の安定な液晶表示
装置を得ることは困難である。In particular, induced domains occur, making it difficult to obtain a liquid crystal display device with stable display characteristics.
これは従来のポリイミド系高分子の熱重量分析において
400℃付近で重量減少開始が観測されることから加熱
によって高分子膜の表面状態に変化がおこりラビング効
果がそこなわれ、液晶の配向状態を変えてしまうものと
考えられる。This is because in conventional thermogravimetric analysis of polyimide polymers, weight loss is observed to begin at around 400°C, so heating causes changes in the surface state of the polymer film, impairing the rubbing effect, and changing the orientation state of the liquid crystal. It is thought that it can be changed.
上記のような400℃以上の熱処理で膜に変化がおこら
ず安定な配向をもつ高分子膜として、特開昭53−24
850号公報記載のイソインドロキナゾリンジオン環を
有するポリイミドの被膜が知られているが、この被膜は
、その基板面との接着性がわるいためにラビング処理の
際に塗膜に部分的に膜はがれが生じ、そのためにドメイ
ンが発生する等の配向不良がおこる欠点があった。JP-A-53-24 has been developed as a polymer film with stable orientation without any change in the film after heat treatment at 400°C or higher as described above.
A polyimide film having an isoindoroquinazolinedione ring is known as described in Japanese Patent Application No. 850, but this film has poor adhesion to the substrate surface, so the coating film is partially coated during the rubbing process. There was a drawback that peeling occurred, resulting in poor orientation such as the formation of domains.
本発明者らは従来技術の上記の欠点をなくすべく検討し
た結果本発明に至った。The present inventors conducted studies to eliminate the above-mentioned drawbacks of the prior art, and as a result, they arrived at the present invention.
すなわち本発明は、どの様な液晶物質であっても液晶の
分子軸を基板面に対し平行にかつ基板面の特性方向に配
向させ、かつこの液晶配向規制力がきわめて耐熱性に優
れ、なおかつ対ラビング性を向上させた液晶挾持基板を
提供するもので、これによって液晶表示素子組立に制限
を与えず経時的に安定で長寿命かつ高性能の液晶表示装
置が得られる。In other words, the present invention allows the molecular axis of the liquid crystal to be aligned parallel to the substrate surface and in the characteristic direction of the substrate surface, regardless of the liquid crystal substance, and this liquid crystal alignment regulating force has excellent heat resistance and A liquid crystal holding substrate with improved rubbing properties is provided, thereby providing a liquid crystal display device that is stable over time, has a long life, and has high performance without imposing restrictions on the assembly of liquid crystal display elements.
本発明は、液晶挾持基板上の液晶に面する側に電極を設
け、該基板及び電極上に、カルボン酸無水物、ジアミン
、ジアミノモノアミドおよびジアミノシロキサンをジア
ミン、ジアミノモノアミドおよびジアミノシロキサンの
総量に対してジアミノモノアミドを0.1〜50モルφ
、ジアミノシロキサンを0.1〜50モルφとして反応
させて得られるシロキサン結合を含むポリアミド酸を、
脱水閉環して得られるシロキサン結合とイソインドロキ
ナゾリンジオン環を有するポリイミド(以下ポリイミド
とする)の被膜を形成してなる液晶挾持基板に関する。The present invention provides an electrode on the side facing the liquid crystal on a liquid crystal holding substrate, and on the substrate and the electrode, carboxylic acid anhydride, diamine, diamino monoamide, and diamino siloxane are added to the total amount of diamine, diamino monoamide, and diamino siloxane. 0.1 to 50 mol φ of diaminomonoamide
, a polyamic acid containing a siloxane bond obtained by reacting diaminosiloxane at 0.1 to 50 mol φ,
The present invention relates to a liquid crystal holding substrate formed by forming a film of polyimide (hereinafter referred to as polyimide) having a siloxane bond obtained by dehydration ring closure and an isoindoroquinazolinedione ring.
本発明で用いるポリイミドの前駆体であるシロキサン結
合を含むポリアミド酸はカルボン酸無水物、ジアミン、
ジアミノモノアミド及びジアミノシロキサンの反応によ
り合成される。The polyamic acid containing a siloxane bond, which is a precursor of the polyimide used in the present invention, is a carboxylic acid anhydride, a diamine,
It is synthesized by the reaction of diaminomonoamide and diaminosiloxane.
これらの反応は無水条件下、好ましくは50℃またはそ
れ以下の温度で行なわれる。These reactions are carried out under anhydrous conditions, preferably at temperatures of 50°C or less.
カルボン酸無水物、ジアミン、ジアミノモノアミドおよ
びジアミノシロキサンの反応割合はカルボン酸無水物の
モル数とジアミン、ジアミノモノアミドおよびジアミノ
シロキサンのモル数とを等モルにすることが好ましい。Regarding the reaction ratio of carboxylic anhydride, diamine, diaminomonoamide, and diaminosiloxane, it is preferable that the number of moles of carboxylic anhydride and the number of moles of diamine, diaminomonoamide, and diaminosiloxane be equimolar.
この反応はジメチルフォルムアミド、ジメチルアセトア
ミド、ジメチルスルフオキシド、N−メチルピロリドン
等の溶剤の存在下で行なわれる。This reaction is carried out in the presence of a solvent such as dimethylformamide, dimethylacetamide, dimethylsulfoxide or N-methylpyrrolidone.
カルボン酸無水物としては、たとえばピロメリット酸無
水物、2,3,6.7−ナフタレンテトラカルボン酸無
水物、3.3’、4.4’−ジフェニルテトラカルボン
酸無水物、1,2,5,6−ナフタレンテトラカルボン
酸無水物、2.2’、3゜3′−ジフェニルテトラカル
ボン酸無水物、チオフェン−2,3,4,5−テトラカ
ルボン酸無水物、2.2−ビス(3,4−ビスカルボキ
シフェニル)プロパン無水物、3,4−ジカルボキシフ
ェニルスルホン無水物、ペリレン−3,4,9,10テ
トラカルボン酸無水物、ビス(3,4−ジカルボキシフ
ェニル)エーテル無水物、3.3’、4゜4′−ベンゾ
フェノンテトラカルボン酸無水物などが用いられる。Examples of the carboxylic anhydride include pyromellitic anhydride, 2,3,6.7-naphthalenetetracarboxylic anhydride, 3.3',4.4'-diphenyltetracarboxylic anhydride, 1,2, 5,6-naphthalenetetracarboxylic anhydride, 2.2',3゜3'-diphenyltetracarboxylic anhydride, thiophene-2,3,4,5-tetracarboxylic anhydride, 2,2-bis( 3,4-biscarboxyphenyl)propane anhydride, 3,4-dicarboxyphenylsulfone anhydride, perylene-3,4,9,10 tetracarboxylic anhydride, bis(3,4-dicarboxyphenyl)ether anhydride 3.3', 4°4'-benzophenone tetracarboxylic acid anhydride and the like are used.
ジアミンとしては、たとえばm−フェニレンジアミン、
p−フェニレンジアミン、m−キシレンジアミン、p−
キシレンジアミン、4.4’−ジアミノジフェニルエー
テル、4.4’−ジアミノジフェニルメタン、3.3’
−ジメチル−4,4′−ジアミノジフェニルメタン、3
,3’、5,5’−テトラメチル−4,4′−ジアミノ
ジフェニルメタン、2゜2′−ビス(4−アミノフェニ
ル)プロパン、4゜4′−メチレンジアニリン、ベンジ
ン、4.4’−ジアミノジフェニルスルフィド、4.4
’−ジアミノジフェニルスルホン、1,5−ジアミノナ
フタレン、3,3′−ジメチルベンジン、3,3′−ジ
メトキシベンジン、ジアミノモノアミドとしては、たと
えば1,4−ジアミノベンゼン−2−カルボンアミド、
4.4’−ジアミノジフェニルエーテル−3−カルボン
アミドなどが用いられる。Examples of the diamine include m-phenylenediamine,
p-phenylenediamine, m-xylenediamine, p-
Xylene diamine, 4.4'-diaminodiphenyl ether, 4.4'-diaminodiphenylmethane, 3.3'
-dimethyl-4,4'-diaminodiphenylmethane, 3
, 3', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2°2'-bis(4-aminophenyl)propane, 4°4'-methylene dianiline, benzine, 4,4'- Diaminodiphenyl sulfide, 4.4
'-diaminodiphenylsulfone, 1,5-diaminonaphthalene, 3,3'-dimethylbenzine, 3,3'-dimethoxybenzine, diaminomonoamide, for example, 1,4-diaminobenzene-2-carbonamide,
4.4'-diaminodiphenyl ether-3-carbonamide and the like are used.
本発明で用いられるジアミノシロキサンとしては、たと
えば一般式
(式中Rは2価の炭化水素基、R1,R2,R3および
R4は1価の炭化水素基、nは1以上の整数である。The diaminosiloxane used in the present invention has the general formula (where R is a divalent hydrocarbon group, R1, R2, R3 and R4 are monovalent hydrocarbon groups, and n is an integer of 1 or more).
)で示される化合物が用いられ、その例としては、など
の化合物がある。) are used, examples of which include the following compounds.
カルボン酸無水物、ジアミン、ジアミノモノアミドおよ
びジアミノシロキサンは、耐熱性の点からいずれも芳香
族の化合物を用いることが好ましい。For the carboxylic acid anhydride, diamine, diaminomonoamide, and diaminosiloxane, aromatic compounds are preferably used in terms of heat resistance.
カルボン酸無水物、ジアミン、ジアミノモノアミドおよ
びジアミノシロキサンは、それぞれ二種以上併用しても
よい。Two or more of the carboxylic acid anhydrides, diamines, diaminomonoamides, and diaminosiloxanes may be used in combination.
ジアミノモノアミドおよびジアミノシロキサンのジアミ
ン、ジアミノモノアミドおよびジアミノシロキサン中に
含まれる割合は、接着性、耐熱性および安定性の点から
ジアミン、ジアミノモノアミド、ジアミノシロキサンの
総量に対してジアミノモノアミドは0.1〜50モル優
、ジアミノシロ☆・キサンは0.1〜50モルφとされ
る。The ratio of diaminomonoamide and diaminosiloxane contained in diamine, diaminomonoamide and diaminosiloxane is from 0.1 to the total amount of diamine, diaminomonoamide and diaminosiloxane from the viewpoint of adhesion, heat resistance and stability. 50 moles or more, and diaminosilo*xane is said to be 0.1 to 50 moles φ.
上記のポリアミド酸の基板及び電極上への塗布は、該ポ
リアミド酸をジメチルフォルムアミド、ジメチルアセト
アミド、ジメチルスルフオキシド、N−メチルピロリド
ン等の0.01〜40重量φ溶液として、これをディッ
プ法、スピンナ法、スプレー法、印刷法、刷毛塗り法な
どにより塗布して行なわれる。The above-mentioned polyamic acid is applied onto the substrate and electrodes by dipping the polyamic acid into a 0.01 to 40 weight φ solution of dimethylformamide, dimethylacetamide, dimethyl sulfoxide, N-methylpyrrolidone, etc. It is applied by a spinner method, a spray method, a printing method, a brush coating method, etc.
塗布後100’C〜400℃好ましくは250℃ミ35
0℃で加熱処理して上記のポリアミド酸を脱水閉環して
ポリイミドの被膜が得られる。100'C~400℃ after coating, preferably 250℃
The above polyamic acid is dehydrated and ring-closed by heat treatment at 0°C to obtain a polyimide film.
ポリイミドは、シロキサン結合とイソインドロキナゾリ
ンジオン環を有するが、このポリイミドは、次の構造単
位(1) 、 (2)及び(3)を含むものである。Polyimide has a siloxane bond and an isoindoroquinazolinedione ring, and this polyimide contains the following structural units (1), (2), and (3).
構造単位(1)〜(3)において、Arは例えは芳香族
残基、YはS02又はCO,Rは2価の炭化水素基、R
′は1価の炭化水素基、R1は4価の基、R2は2価の
炭化水素基、mは1以上の整数である。In structural units (1) to (3), Ar is, for example, an aromatic residue, Y is S02 or CO, R is a divalent hydrocarbon group, R
' is a monovalent hydrocarbon group, R1 is a tetravalent group, R2 is a divalent hydrocarbon group, and m is an integer of 1 or more.
以下、実施例及び比較例により本発明を具体的に説明す
る。Hereinafter, the present invention will be specifically explained with reference to Examples and Comparative Examples.
実施例 I
N−メチルピロリドン中で1,3−ビス(アミノプロピ
ル)−テトラメチルジシロキサン0.1モルと4,4′
−ジアミノジフェニルエーテル0.8モル、4 、4’
−ジアミノジフェニルエーテル−3−カルボンアミドo
、iモル及び3.3’、4.4’−ベンゾフェノンテト
ラカルボン酸無水物0.1モルを縮合して得られたシロ
キサン結合とイソインドロキナゾリンジオン環を有する
ポリイミドの前駆体であるシロキサン結合を有するポリ
アミド酸の10重量%N−メチルピロリドン溶液をスピ
ンナを用いて酸化インジウムの電極が形成されたガラス
基板に塗布した。Example I 0.1 mol of 1,3-bis(aminopropyl)-tetramethyldisiloxane and 4,4' in N-methylpyrrolidone
-diaminodiphenyl ether 0.8 mol, 4,4'
-diaminodiphenyl ether-3-carbonamide o
, i mole and 0.1 mole of 3.3', 4.4'-benzophenonetetracarboxylic acid anhydride are condensed to form a siloxane bond and a siloxane bond which is a precursor of a polyimide having an isoindoquinazolinedione ring. A 10% by weight N-methylpyrrolidone solution of polyamic acid having the following formula was applied using a spinner onto a glass substrate on which indium oxide electrodes were formed.
塗布後300℃で2時間加熱閉環させシロキサン結合と
イソインドロキナゾリンジオン環を有するポリイミドの
被膜を80OAの厚さに形成した。After coating, ring closure was performed by heating at 300° C. for 2 hours to form a polyimide film having a siloxane bond and an isoindoroquinazolinedione ring to a thickness of 80 OA.
その後絞被膜を一定方向にガーゼでラビング処理を行な
ったが、該被膜にはがれは生じなかった。Thereafter, the squeeze coating was rubbed in a certain direction with gauze, but no peeling occurred in the coating.
また上記のラビング処理した被膜を有する基板の一対を
用い、低融点ガラスフリットを用いて450℃で30分
加熱圧着して液晶表示セルを作製し、液晶を封入して配
向性を観察したが、配向は良好であった。In addition, using a pair of substrates having the above-mentioned rubbed coating, a liquid crystal display cell was prepared by heat-pressing at 450°C for 30 minutes using a low-melting glass frit, liquid crystal was sealed, and the orientation was observed. The orientation was good.
比較例 I
N−メチルピロリドン中で、4.4’−ジアミノジフェ
ニルエーテル0.9モル、4.4’−ジアミノジフェニ
ルエーテル−3−カルボンアミド0.1モル及び3.3
’、4.4’−ベンゾフェノンテトラカルボン酸無水物
1.0モルを縮合して得られるイソインドロキナゾリン
ジオン環を有するポリイミドの前駆体であるポリアミド
酸の10重量%N−メチルピロリドン溶液を用い、上記
実施例1と同様の方法で処理してイソインドロキナゾリ
ンジオン環を有するポリイミドの被膜を800人の厚さ
に形成した。Comparative Example I 0.9 mol of 4,4'-diaminodiphenyl ether, 0.1 mol of 4,4'-diaminodiphenyl ether-3-carbonamide and 3.3 mol in N-methylpyrrolidone
Using a 10% by weight N-methylpyrrolidone solution of polyamic acid, which is a precursor of polyimide having an isoindoquinazolinedione ring obtained by condensing 1.0 mol of ',4,4'-benzophenonetetracarboxylic acid anhydride, A polyimide film having an isoindoroquinazolinedione ring was formed to a thickness of 800 mm by processing in the same manner as in Example 1 above.
その後上記実施例1とまったく同様にしてラビング処理
を行なったところ、部分的に基板からはがれが生じた。Thereafter, when a rubbing process was performed in exactly the same manner as in Example 1, partial peeling occurred from the substrate.
また上記実施例1と同様にして液晶表示セルを作製した
ところ、部分的に配向不良が観測された。Further, when a liquid crystal display cell was produced in the same manner as in Example 1, poor alignment was observed in some parts.
実施例および比較例に示すとおり、本発明におけるシロ
キサン結合とイソインドロキナゾリンジオン環を有する
ポリイミドの被膜は基板に対して非常に優れた接着性を
示し、あらゆるラビング処理条件に耐えることができる
。As shown in the Examples and Comparative Examples, the polyimide film having a siloxane bond and an isoindoroquinazolinedione ring in the present invention exhibits excellent adhesion to the substrate and can withstand all kinds of rubbing treatment conditions.
また液晶配向規制力の耐熱性が450℃以上ときわめて
優れているため、本発明になる液晶挟持基板を用いれば
フリットシール等の液晶素子組立に制限を与えず経時的
に安定で長寿命かつ、高特性の液晶表示装置を得ること
ができる。In addition, the heat resistance of the liquid crystal alignment regulating force is extremely excellent at 450°C or higher, so if the liquid crystal sandwiching substrate of the present invention is used, there will be no restrictions on liquid crystal element assembly such as frit seals, and it will be stable over time and have a long life. A liquid crystal display device with high characteristics can be obtained.
Claims (1)
基板及び電極上に、カルボン酸無水物、ジアミン、ジア
ミノモノアミドおよびジアミノシロキサンをジアミン、
ジアミノモノアミドおよびジアミノシロキサンの総量に
対して、ジアミノモノアミドを0.1〜50モル袈、ジ
アミノシロキサンを0.1〜50モルφとして反応させ
て得られるシロキサン結合を含むポリアミド酸を、脱水
閉環して得られるシロキサン結合とインインドロキナゾ
リンジオン環を有するポリイミドの被膜を形成してなる
液晶挟持基板。1 An electrode is provided on the side facing the liquid crystal on the liquid crystal sandwiching substrate, and carboxylic acid anhydride, diamine, diaminomonoamide, and diaminosiloxane are placed on the substrate and the electrode.
A polyamic acid containing a siloxane bond obtained by reacting diaminomonoamide in an amount of 0.1 to 50 moles and diaminosiloxane in an amount of 0.1 to 50 moles φ with respect to the total amount of diaminomonoamide and diaminosiloxane is dehydrated and ring-closed. A liquid crystal sandwiching substrate formed by forming a polyimide film having the obtained siloxane bond and an indoroquinazolinedione ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55110918A JPS5826004B2 (en) | 1980-08-11 | 1980-08-11 | LCD holding board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55110918A JPS5826004B2 (en) | 1980-08-11 | 1980-08-11 | LCD holding board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734523A JPS5734523A (en) | 1982-02-24 |
| JPS5826004B2 true JPS5826004B2 (en) | 1983-05-31 |
Family
ID=14547925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55110918A Expired JPS5826004B2 (en) | 1980-08-11 | 1980-08-11 | LCD holding board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5826004B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0485301U (en) * | 1990-11-29 | 1992-07-24 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0711132A (en) * | 1993-07-16 | 1995-01-13 | Toray Ind Inc | Heat-resistant coloring paste for color filters |
| JPH0713012A (en) * | 1993-08-11 | 1995-01-17 | Toray Ind Inc | Heat-resistant coloring paste for color filters |
-
1980
- 1980-08-11 JP JP55110918A patent/JPS5826004B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0485301U (en) * | 1990-11-29 | 1992-07-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5734523A (en) | 1982-02-24 |
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