JPS5829494B2 - Image storage display method - Google Patents
Image storage display methodInfo
- Publication number
- JPS5829494B2 JPS5829494B2 JP7602676A JP7602676A JPS5829494B2 JP S5829494 B2 JPS5829494 B2 JP S5829494B2 JP 7602676 A JP7602676 A JP 7602676A JP 7602676 A JP7602676 A JP 7602676A JP S5829494 B2 JPS5829494 B2 JP S5829494B2
- Authority
- JP
- Japan
- Prior art keywords
- image
- solid solution
- display method
- semiconductor layer
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 19
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000006104 solid solution Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000000149 argon plasma sintering Methods 0.000 claims description 5
- 238000009825 accumulation Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Combination Of More Than One Step In Electrophotography (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Exposure Or Original Feeding In Electrophotography (AREA)
Description
【発明の詳細な説明】
本発明は画像蓄積表示方法、詳しくは透明導電性基板上
に非晶質セレン等の光半導体層を設けたものと、セラミ
ック固溶体の一面に透明導電性膜を付着させたものと、
コロナ帯電器とを用いて画像を蓄積表示する方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image storage and display method, in particular, a method in which an optical semiconductor layer such as amorphous selenium is provided on a transparent conductive substrate, and a transparent conductive film is attached to one surface of a ceramic solid solution. and
The present invention relates to a method of accumulating and displaying images using a corona charger.
従来、画像蓄積表示方法としては例えば第1図に示す如
く、透明電極1の上にポリビニールカルバゾール等の光
半導体層2 、Pb(Zr、Ti)o3系固溶体にLa
を添加したセラミックス
Pb(1−x)Lax(Zr(1−y)Tiy)t −
”Q等の温度に対しては変化の少ない組成変態相境界(
Morphotropic Phase Bounda
ry)を有するセラミック固溶体3、透明電極4を積層
してなる素子における両電極1,4間に直流電圧を印加
し、この状態で第2図に示すように透明電極1側から像
露光5して画像を蓄積表示する方法が知られている。Conventionally, as an image storage display method, as shown in FIG.
Pb(1-x)Lax(Zr(1-y)Tiy)t-
``The compositional transformation phase boundary (
Morphotropic Phase Bounda
A DC voltage is applied between both electrodes 1 and 4 in an element formed by stacking a ceramic solid solution 3 having a ceramic solid solution 3 having a nylon rye and a transparent electrode 4, and in this state image exposure 5 is performed from the transparent electrode 1 side as shown in FIG. A method of storing and displaying images is known.
このようにすると、光像の明部に対応するセラミック固
溶体3′が光散乱状態に相転移し、暗部に対応するセラ
ミック固溶体3“は透明のまま残るので蓄積画像が作成
されることになる。In this way, the ceramic solid solution 3' corresponding to the bright part of the optical image undergoes a phase transition to a light scattering state, and the ceramic solid solution 3'' corresponding to the dark part remains transparent, so that an accumulated image is created.
このようにして作成された蓄積画像は透過型、反射型読
出し機構のいずれかを用いてネガ像又はポジ像に作成で
きる。The stored image thus created can be made into a negative or positive image using either a transmissive or reflective readout mechanism.
また、このようにして作成された蓄積画像は第3図に示
す如く、透明電極1側から一様露光6して表面の透明電
極4に100Hz程度の面内電流を交互に流してそのジ
ュール熱で加熱消去することができる。In addition, the accumulated image created in this way is produced by uniformly exposing the transparent electrode 1 to light 6 and then alternately passing an in-plane current of about 100 Hz through the transparent electrode 4 on the surface, as shown in FIG. It can be erased by heating.
以上述べた従来の画像蓄積表示方法では、消去手段が相
転移を利用しての熱消去であるため光半導体層2として
セレンのような高感度ではあるが比較的低い温度で結晶
化する物質を用いることができないと共に、ポジ像から
ポジ像を作成する場合には散乱光で投影像を結像させる
ため明るさが大幅に減少してしまうという不具合を有し
ている。In the conventional image storage and display method described above, since the erasing means is thermal erasure using phase transition, the optical semiconductor layer 2 is made of a substance such as selenium, which has high sensitivity but crystallizes at a relatively low temperature. In addition to being unusable, when creating a positive image from a positive image, the projected image is formed using scattered light, which has the disadvantage that the brightness is significantly reduced.
本発明は上記の事情に鑑みなされたものであり、その目
的は、光半導体層として高感度ではあるが比較的低い温
度で結晶化する物質を用いることができると共に、ポジ
像からポジ像を作成する場合に明るさの減少を軽減でき
るようにした画像蓄積表示方法を提供することである。The present invention was made in view of the above-mentioned circumstances, and its purpose is to be able to use a substance that is highly sensitive but crystallizes at a relatively low temperature as an optical semiconductor layer, and to create a positive image from a positive image. An object of the present invention is to provide an image storage and display method that can reduce the reduction in brightness when images are displayed.
以下第4図以降を参照して本発明の詳細な説明する。The present invention will be described in detail below with reference to FIG. 4 and subsequent figures.
第4図は本発明に係る画像蓄積表示方法に使用する部材
を示すもので、ガラス基板7に透明導電性膜8を設けた
透明電極9上に光半導体層10を設けてなる第1部材A
と、Pb(Zr、Ti)OJ固溶体にLaを添加したセ
ラミックス
Pb(1x)Lax(Zr(1−y)Tiy)1−LQ
3等の温度に対しては変化の少ない組成変態相境界を有
するセラミック固溶体11(以下PLZTと略称する)
の片面に透明導電性膜12を有する第2部材Bと、コロ
トロン帯電器等の帯電部材Cとから構成しである。FIG. 4 shows members used in the image storage and display method according to the present invention. A first member A includes a transparent electrode 9 provided with a transparent conductive film 8 on a glass substrate 7 and an optical semiconductor layer 10 provided thereon.
and ceramics Pb(1x)Lax(Zr(1-y)Tiy)1-LQ in which La is added to Pb(Zr,Ti)OJ solid solution.
Ceramic solid solution 11 (hereinafter abbreviated as PLZT) having a compositional transformation phase boundary whose composition changes little with respect to temperatures such as 3
It consists of a second member B having a transparent conductive film 12 on one side thereof, and a charging member C such as a corotron charger.
次に上記の部材A、B、Cを用いて画像を蓄積表示する
方法を説明する。Next, a method of storing and displaying images using the members A, B, and C described above will be explained.
まず、第5図に示す如く第1部材Aの光半導体層10上
に沿って帯電部材Cを移動させて光半導体層10上に電
荷13をのせる。First, as shown in FIG. 5, the charging member C is moved along the optical semiconductor layer 10 of the first member A to place charges 13 on the optical semiconductor layer 10.
次に、第6図に示す如くガラス基板7側から像露光14
すると光像の暗部に対応する部分の電荷13のみが光半
導体層10上に残る。Next, as shown in FIG. 6, image exposure 14 is performed from the glass substrate 7 side.
Then, only the charges 13 corresponding to the dark portions of the optical image remain on the optical semiconductor layer 10.
その後、第7図に示す如く第1部材Aに第2部材Bを重
合し1両電極8,12に電圧を印加する。Thereafter, as shown in FIG. 7, the first member A is superimposed on the second member B, and a voltage is applied to both electrodes 8 and 12.
このようにすると電荷残存部13′に対応するPLZT
11’は光散乱状態に転移し、他は透明相11“のま
ま残るので、PLZTllに蓄積画像が形成される。In this way, the PLZT corresponding to the charge remaining portion 13'
11' transitions to a light-scattering state while the others remain in the transparent phase 11'', thus forming an accumulated image on PLZTll.
第2部材Bを第1部材Aから離してもPLZTllには
蓄積画像が記憶されているので、第8図に示す如くの読
出光14、レンズ15、表示部16よりなる透過型読出
機構によりPLZTllの蓄積画像を読出すことができ
る。Even if the second member B is separated from the first member A, the accumulated image is stored in the PLZTll, so that the PLZTll is stored in the PLZTll by a transmission type readout mechanism consisting of a readout light 14, a lens 15, and a display section 16 as shown in FIG. The stored images can be read out.
また、PLZTliの蓄積画像の消去は第9図に示す如
く導電性平板17上に第2部材Bを置き。Also, to erase the accumulated image of PLZTli, place the second member B on the conductive flat plate 17 as shown in FIG.
その透明導電性膜12に電流を流してジュール熱を発生
させることにより消去されるので、PLZTllを再使
用することができる。The PLZTll can be reused because it is erased by passing a current through the transparent conductive film 12 to generate Joule heat.
次に、具体例を説明する。Next, a specific example will be explained.
ネサガラス基板9上に非晶質セレンを10〜30μmの
厚さに真空蒸着して光半導体層10を形成して第1部材
Aとする。A first member A is formed by vacuum-depositing amorphous selenium to a thickness of 10 to 30 μm on a Nesa glass substrate 9 to form an optical semiconductor layer 10 .
一方、PLZT7.6/70/30を200μmの厚さ
の薄板に研磨加工し、表面にI n 03 S n
02の固溶体を高周波スパッタして抵抗約10Ω/口の
透明導電性膜12を付は第2部材Bとする。On the other hand, PLZT7.6/70/30 was polished into a thin plate with a thickness of 200 μm, and the surface was coated with I n 03 S n
A transparent conductive film 12 having a resistance of about 10 Ω/hole was formed by high-frequency sputtering of the solid solution of No. 02 to form a second member B.
表面には電流を流す端子をクロムと金を蒸着して作り、
リード線を接続する。Terminals for passing current are made on the surface by vapor-depositing chromium and gold.
Connect the lead wires.
先ず、ネサガラス導電膜8を接地しておき非晶質セレン
10上にコロトロン帯電器Cを用いて一200V程度に
帯電13する。First, the Nesaglass conductive film 8 is grounded, and the amorphous selenium 10 is charged 13 to about -200V using a corotron charger C.
次に、裏面から像露光して像様の静電荷パターンを非晶
質セレン10表面に残す。Next, imagewise exposure is performed from the back side to leave an imagewise electrostatic charge pattern on the surface of the amorphous selenium 10.
その後、この第1部材Aに導電面を上にして第2部材B
を載せ表面電極12に+50V程度の電圧を印加すると
光散乱相と透明相で形成される蓄積画像がPLZTll
に得られる。Thereafter, a second member B is placed on the first member A with the conductive surface facing up.
When a voltage of about +50 V is applied to the surface electrode 12, an accumulated image formed by a light scattering phase and a transparent phase is PLZTll.
can be obtained.
そして、第2部材Bを分離して表示素子として使用でき
る。Then, the second member B can be separated and used as a display element.
第10図はこのようにして得られた蓄積画像を有する第
2部材Bを複写機に応用した説明図で、第2部材BのP
LZTi 1に作成された蓄積画像は書込み光源18と
コンデンサーレンズ19を通してレンズ20で感光体ド
ラム21上に結像され、その後現像工程22、転写工程
23を経て用紙24に転写されて蓄積画像を用紙24に
コピーすることができる。FIG. 10 is an explanatory diagram in which the second member B having the accumulated image obtained in this way is applied to a copying machine, and the P of the second member B is
The accumulated image created on the LZTi 1 is formed on the photosensitive drum 21 by the lens 20 through the writing light source 18 and the condenser lens 19, and then transferred to the paper 24 through the development process 22 and the transfer process 23, and the accumulated image is transferred to the paper 24. It can be copied to 24.
このようにすることにより、PLZTll に作成され
た蓄積画像より多数枚のコピーを取ることができると共
に、複写機の消費電力を小さくすることができる。By doing so, it is possible to make a larger number of copies than the stored image created in PLZTll, and it is also possible to reduce the power consumption of the copying machine.
本発明は前述のように構成したので、セラミック固溶体
層11に光像に応じた光散乱画像を得ることができると
共に、そのセラミック固溶体層11を分離独立しても蓄
積画像は消去しない。Since the present invention is configured as described above, a light scattering image corresponding to the optical image can be obtained on the ceramic solid solution layer 11, and the accumulated image will not be erased even if the ceramic solid solution layer 11 is separated and independent.
したがって、光半導体層10の耐熱性は要求されないの
でアモルファスセレン等の高感度ではあるが比較的低い
温度で結晶化する物質を用いることができると共に、セ
ラミック固溶体層11を分離独立させ透過光で像を再生
することができるので読出光の明るさの減衰を極めて小
さくすることができ、ポジ像からポジ像を作成する場合
に明るさの減少を軽減できる。Therefore, since heat resistance is not required for the optical semiconductor layer 10, it is possible to use a substance such as amorphous selenium which has high sensitivity but crystallizes at a relatively low temperature, and the ceramic solid solution layer 11 can be separated and independently imaged with transmitted light. can be reproduced, the attenuation of the brightness of the readout light can be made extremely small, and the decrease in brightness can be reduced when creating a positive image from a positive image.
第1図は従来の画像蓄積表示方法に用いられる素子、第
2図はその素子を用いて画像を蓄積表示する方法の動作
模式図、第3図は第2図の方法で作成された画像を消去
する説明図、第4図は本発明に係る画像蓄積表示方法に
用いられる各部材の説明図、第5図乃至第7図は本発明
に係る方法を工程順に示す説明図、第8図は本発明に係
る方法で作成した画像の読出構成説明図、第9図はその
画像の消去説明図、第10図は複写機に応用した説明図
である。
9は透明電極、10は光半導体層、11はセラミミック
固溶体層、12は電極。Figure 1 shows an element used in a conventional image storage and display method, Figure 2 is a schematic diagram of the operation of a method for storing and displaying images using the element, and Figure 3 shows an image created using the method shown in Figure 2. FIG. 4 is an explanatory diagram of each member used in the image storage and display method according to the present invention. FIGS. 5 to 7 are explanatory diagrams showing the method according to the present invention in the order of steps. FIG. FIG. 9 is an explanatory diagram of the readout configuration of an image created by the method according to the present invention, FIG. 9 is an explanatory diagram of erasing the image, and FIG. 10 is an explanatory diagram of application to a copying machine. 9 is a transparent electrode, 10 is an optical semiconductor layer, 11 is a ceramic solid solution layer, and 12 is an electrode.
Claims (1)
した後像露光を行ない、次いで裏面に電極12を設けた
セラミック固溶体層11を光半導体層10に重ね、両電
極9,12間に電圧を印加してセラミック固溶体層11
内に光像に応じた光散乱蓄積画像を形成することを特徴
とする画像蓄積表示方法。1 After charging the optical semiconductor layer 10 provided on the transparent electrode 9, image exposure is performed, and then a ceramic solid solution layer 11 with an electrode 12 provided on the back surface is stacked on the optical semiconductor layer 10, and a layer is formed between both electrodes 9 and 12. By applying a voltage, the ceramic solid solution layer 11
1. An image accumulation and display method characterized by forming a light scattering accumulation image corresponding to a light image within a display.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7602676A JPS5829494B2 (en) | 1976-06-29 | 1976-06-29 | Image storage display method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7602676A JPS5829494B2 (en) | 1976-06-29 | 1976-06-29 | Image storage display method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS533251A JPS533251A (en) | 1978-01-12 |
| JPS5829494B2 true JPS5829494B2 (en) | 1983-06-23 |
Family
ID=13593302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7602676A Expired JPS5829494B2 (en) | 1976-06-29 | 1976-06-29 | Image storage display method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5829494B2 (en) |
-
1976
- 1976-06-29 JP JP7602676A patent/JPS5829494B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS533251A (en) | 1978-01-12 |
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