JPS583316B2 - magnetic bubble memory element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and particularly to a magnetic bubble memory device that improves the S/N ratio of a detection signal of a magnetic bubble detector.

FIG. 1 is a plan view of essential parts showing an example of a conventional magnetic bubble memory device, and FIG. 2 a=d shows various pulses that control the magnetic bubbles of the magnetic bubble memory device when a 100 KHz rotating magnetic field is applied. and a waveform timing diagram of a magnetic bubble detection signal.

First, in FIG. 1, arrows indicate the direction of movement of the magnetic bubble.

101 is a magnetic bubble generator, and a magnetic bubble written by supplying a pulse current to this magnetic bubble generator 101 rotates in a plane on a common loop 102 formed by arranging transfer elements made of, for example, a chevron pattern. It moves in synchronization with the magnetic field (frequency - 100KHz).

This magnetic co-pull is then applied to the gate circuits 103 and 104.
, 105, 106, 107 and the gate circuits 103 to 1
A gate pulse generator 1 which sends a pulse 1 called transfer fine as shown in Fig. 2a to the conductor 07.
08, the data is moved to the circulation loop 109-113 and stored there.

Also, when reading or writing magnetic abrasive bubbles, information from circulation loops 109 to 113 is sent to gate circuits 103 to 103.
7 and a pulse called transfer out from the gate pulse generator 108.

{see FIG. 2 a} to move it to the common lunip 102,
Then, from now on, the copy erasure circuit 114 operates on the common loop 102.
move it to.

When erasing, a pair of erasing pulse currents consisting of an expand pulse Ie and an annunciator pulse I3 as shown in FIG. Information bubbles can be erased.

Also, when reading, the copy erase pulse generator 115
Extract pulse ■8 and cut pulse I from.

By passing a pair of replication pulse currents {see FIG. 2b} consisting of Resistance value changes.

This change is then converted into a voltage change, and the amplifier 11
7, and is time sampled by a strobe pulse and detected as a signal.

However, in the magnetic bubble memory element with the above configuration, the detection signal S output to the magnetic bubble detector 116 is magnetic because various noises N are superimposed in addition to the magnetic bubble signal, as shown in FIG. This reduces the S/N ratio of the bubble output signal and prevents the normal operation of the function.

For example, one of the various types of noise mentioned above is the replication pulse current {exband pulse 2 shown in FIG. 2b] supplied to the replication cancellation circuit 114.

and cut pulse IC}.

Next, this induced noise will be explained in detail.

Now, in the circulation loops 109 to 113, the copy erasure circuit 11
From the circular loop 113 closest to 4 to the duplicate erasure circuit 114
The bit interval from the circulation loop 113 to the bubble detector 116 is 02, and the bit interval from the circulation loop 113 to the bubble generator 101 is n3.

Here, in order to read the information stored in the circulation loops 109 to 113, the circulation loops 109 to 113 to be read are read.
When the address in 113 and the circulation loop counter match, a transfer-out pulse I is applied to the gate circuits 103-107 as shown in FIG. 2a.

After the 01 bit, the duplicate erase pulse generator 1
From 15, expand pulse ■8 and cut pulse I.

and the same number of circulation loops, and while duplicating and dividing the magnetic bubbles, read out and divide the divided bubbles into the common loop 1.
The transfer is being performed within 02.

Then, when the read address in the circulation loop matches the circulation loop counter, the magnetic bubble transferred to the common loop 102 receives a transfine pulse 1 as shown in FIG. Loop 109-1
It will be stored again in 13.

What should be noted here is that while the magnetic bubble detector 116 is operating, that is, while reading the magnetic bubble output, the second
As shown in the figure, the expand pulse (2) from the copy erase pulse generator 115 is flowing to the copy erase circuit 114.

In this case, when both n and n are odd numbers or even numbers, the magnetic bubble generator 116 as shown in FIG.
The expanded pulse ■ shown in Fig. 2b is applied to the output signal S of
8 and cut pulse■.

Induced noise N due to this will be superimposed.

In addition, when writing is performed simultaneously during the read cycle, when n2 and n03 are both odd numbers or even numbers, the magnetic bubble generator 116 is activated as shown in FIG. 2C.
The induced noise N generated by the generate rate pulse IG and the annihilation pulse 3 is superimposed on the bubble output, resulting in a bubble output waveform as shown in FIG. 2b.

As a result, induced noise caused by various pulses is superimposed on the bubble detection signal detected by the magnetic bubble detector 116, and the S/
N is significantly reduced and the presence/absence of information, i.e. “■”,”
It has the disadvantage that it is extremely difficult to judge whether it is 0"A or not.

Therefore, an object of the present invention has been made to improve the above-mentioned drawbacks, and to significantly increase the S/N ratio of the magnetic bubble detection signal by preventing the induced noise caused by various pulses for magnetic bubble control from being output during readout. An object of the present invention is to provide an improved magnetic bubble memory device.

In order to achieve this purpose, the magnetic bubble memory device according to the present invention utilizes the feature of inserting a bubble for each bit on a common loop to operate a duplication erase circuit, a magnetic bubble generator, and a magnetic bubble detector as appropriate. They are arranged in a bit positional relationship.

The magnetic bubble memory device according to the present invention will be described in detail below with reference to the drawings.

FIG. 3 is a plan view of essential parts showing an example of the magnetic bubble memory element according to the present invention, and since the same symbols as in FIG. 1 represent the same elements, a description thereof will be omitted.

In the figure, as described above, the bit interval from the circulation loop 113 to the copy erasure circuit 114 is n1, the bit interval from the circulation loop 113 to the magnetic bubble detector 116 is n2, and the bit interval from the circulation loop 113 to the magnetic bubble generator 101 is n1. Assuming that the bit interval is n3, or NltN2tN3, the copy erasure circuit 114, the magnetic bubble detector 116, and the magnetic bubble generator 101 are respectively arranged so as to satisfy the relationship of natural numbers.

In other words, in equation (1), the magnetic bubble detector 116
are placed on even bits (n2=2N2), and the duplication erase circuit 114 and magnetic bubble generator 101, which output various pulses for controlling magnetic bubbles, are placed on odd bits (nt=2N1).
+1, n3=2N3+1).

Also, contrary to equation (2), the magnetic bubble detector 116 is arranged on the odd numbered bits (n2=2N+1), and the copy erasure circuit 114 and the magnetic bubble generator 101 are arranged on the even numbered bits (n1-2N+1).
1, n3=2N3) respectively to constitute a magnetic bubble memory element.

In the magnetic bubble memory element configured in this way,
First, in the case of equation (1), after the transfer pulse Ic is sent from the gate pulse generator 108 during reading, a magnetic bubble detection signal is output to the magnetic bubble detector 116 after n2 bits, that is, after an even number of bits.

Then, a copy erasure circuit 114 and a magnetic bubble generator 101
Various pulses for magnetic bubble control sent out from the gate pulse generator 108 are sent out after nl and n2, that is, after odd-numbered bits.

Therefore, the induced noise generated by the various pulses for magnetic bubble control is not superimposed on the magnetic bubble detection signal.

Therefore, as shown in FIG. 2e, the induced noise N caused by the various pulses for magnetic bubble control is outputted to the odd numbered bits, and only the magnetic bubble detection signal S is outputted to the even numbered bits.

Therefore, the magnetic bubble detector 116 can obtain a readout signal with a high S/N ratio, making it extremely easy to determine "1" and "O".

Next, in equation (2), the configuration is completely opposite to equation (1), and the transfer out pulse ■ is generated from the gate pulse pulse generator 108.

A magnetic bubble detection signal is output to the magnetic bubble detector 116 after n2 bits, that is, after an odd number of bits.

Then, a copy erasure circuit 114 and a magnetic bubble generator 101
The various pulses for magnetic bubble control output from the gate pulse generator 108 are output after n1 and n2, that is, after even bits, and the magnetic bubble detection signal includes the various pulses for magnetic bubble control generated by the above-mentioned various pulses for magnetic bubble control. This means that induced noise will not be superimposed.

Therefore, as shown in FIG. 2e, the induced noise N generated by the various pulses for magnetic bubble control is output to the even bits, and only the magnetic bubble detection signal S is output to the odd bits.

Therefore, the magnetic bubble detector 116 can obtain a readout signal with a high S/N ratio, making it extremely easy to determine whether it is "■" or "0".

As explained above, the magnetic bubble memory element according to the present invention has a structure that does not output induced noise caused by various pulses for magnetic bubble control at the timing of reading out the magnetic bubble detection output, so that the S/N ratio of the magnetic bubble detection signal is It has excellent effects such as significantly improving the operation stability and operation reliability.

[Brief explanation of drawings]

FIG. 1 is a plan view of essential parts showing an example of a conventional magnetic bubble memory element, and FIGS. 2 a to 2 e are waveform timing diagrams of various pulses and detection signals for controlling magnetic bubbles in the conventional magnetic bubble memory element and the present invention. , FIG. 3 is a plan view of main parts of a magnetic bubble memory device according to the present invention. 101...Magnetic bubble generator (generator)
, 102... common loop, 103-107...
...Gate circuit, 108...Gate pulse generator, 109-113...Circulation loop, 11
4...Replication erasure circuit, 115...Replication erasure pulse generator, 116...Magnetic bubble detector, 117...Amplifier.

Claims (1)

[Claims] 1 a plurality of circulation loops that store magnetic bubbles; a common loop that transfers the magnetic bubbles to and from the circulation loop;
A magnetic device comprising at least a magnetic bubble generator for writing the magnetic bubble on the common loop, a duplication erasing circuit for duplicating the magnetic bubble on the common loop, and a magnetic bubble detector for reading the duplicated magnetic bubble. In the bubble memory element, a bit interval from the cyclic loop located at a pit position closest to the replica erasing circuit in the plurality of cyclic loops to the replica erasing circuit is n1, and a bit interval to the magnetic bubble detector is n1. 02, and when the bit interval to the magnetic bubble generator is n3, when n2 is an even number, nl is an odd number, or when n2 is an odd number, nl is an even number. A magnetic bubble memory element characterized in that a detector and the magnetic bubble generator are respectively arranged.