JPS5835939B2 - Glass for semiconductor coating - Google Patents
Glass for semiconductor coatingInfo
- Publication number
- JPS5835939B2 JPS5835939B2 JP559278A JP559278A JPS5835939B2 JP S5835939 B2 JPS5835939 B2 JP S5835939B2 JP 559278 A JP559278 A JP 559278A JP 559278 A JP559278 A JP 559278A JP S5835939 B2 JPS5835939 B2 JP S5835939B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- thermal expansion
- semiconductor coating
- coefficient
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000011248 coating agent Substances 0.000 title claims description 6
- 238000000576 coating method Methods 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000007789 sealing Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002667 nucleating agent Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 本発明は、半導体被覆用ガラスに関するものである。[Detailed description of the invention] The present invention relates to glass for semiconductor coating.
従来、Ｐ−Ｎ接合部を有するシリコンダイオードモール
ド用ガラスとしては、特公昭４５−１１２２９などに示
されているようなＺｎＯ−Ｂ２Ｏ３−８ｉ０２系ガラス
が用いられており、この種のガラスは一般に７００°Ｃ
〜８００℃の温度で封着されている。Conventionally, ZnO-B2O3-8i02 glass as shown in Japanese Patent Publication No. 11229/1983 has been used as glass for silicon diode molds having a P-N junction, and this type of glass is generally °C
Sealed at a temperature of ~800°C.
一般的なガラスモールド型シリコンダイオードを第１図
に示す。A typical glass-molded silicon diode is shown in FIG.
図においてＰ−Ｎ接合部をもつシリコン素子１は、モリ
ブデン電極２及び３にアルミニウム４，５を介して溶着
されており、銅のリード線６，７がそれぞれモリブデン
電極２，３に溶接しである。In the figure, a silicon element 1 with a P-N junction is welded to molybdenum electrodes 2 and 3 via aluminum 4 and 5, and copper lead wires 6 and 7 are welded to the molybdenum electrodes 2 and 3, respectively. be.
シリコン素子１及びモリブデン電極２，３は被覆用ガラ
ス８で覆われている。The silicon element 1 and molybdenum electrodes 2 and 3 are covered with a covering glass 8.
シリコンとアルミニウムの共晶点は５７５℃である。The eutectic point of silicon and aluminum is 575°C.
従ってこの種のシリコンダイオードに、従来のように、
７００°Ｃ〜８００℃という高い温度で、ＺｎＯ−Ｂ２
０３− Ｓ ｉ０２系ガラスを被覆すると、シリコン素
子と電極との接合部に劣化が生じる欠点があった。Therefore, in this type of silicon diode, as in the conventional case,
At high temperatures of 700°C to 800°C, ZnO-B2
When coated with 03-S i02 glass, there was a drawback that deterioration occurred at the joint between the silicon element and the electrode.
本発明は上記の欠点を改善するために提案するもので、
その特徴は、封着温度が６５０℃以下、即ち従来の封着
温度より約１００℃低いことである。The present invention is proposed to improve the above-mentioned drawbacks.
Its feature is that the sealing temperature is 650°C or less, that is, about 100°C lower than the conventional sealing temperature.
本発明のガラスは、重量％で、ＺｎＯ３５〜５５％、８
２０３１０〜３０係、５ｉＯ２５〜１０％。The glass of the present invention contains ZnO 35-55%, 8% by weight.
20310-30 section, 5iO25-10%.
Ｐｂ０１５〜４０％、Ｍｎ０２０．１〜５％を必須成分
とし、その他ＣｅＯ２０〜３係、５ｂ２０３０〜３係。The essential components are Pb015-40% and Mn020.1-5%, and other components include CeO20-3 and 5b2030-3.
Ａ１２０３０〜３係を加えることができる。A12030-3 section can be added.
本発明において、上記のように組成を限定したのは次の
理由による。In the present invention, the composition is limited as described above for the following reason.
Ｚｎ０５５ｑｂ以上では、６５０℃以下の温度で流動し
難くなり、３５係以下のときは、熱膨張係数が大きくな
り過ぎる。If Zn055qb or higher, it becomes difficult to flow at a temperature of 650° C. or lower, and if the coefficient is 35 or lower, the thermal expansion coefficient becomes too large.
Ｂ２Ｏ３が３０係以上のときは、ガラスの封着温度が高
くなりすぎ、１０係以下のときは、ガラス化し難くなる
。When B2O3 is 30 parts or more, the glass sealing temperature becomes too high, and when it is 10 parts or less, it becomes difficult to vitrify.
ＳｉＯ２が１ｏ％以上になると、ガラスの粘性が大きく
なり過ぎて、６５０℃以下の温度では封着できなくなり
、５係以下になると、失透し易くなり、安定なガラスが
得られなくなる。When the SiO2 content is 10% or more, the viscosity of the glass becomes too large and cannot be sealed at a temperature of 650° C. or less, and when it is less than 5%, devitrification tends to occur and a stable glass cannot be obtained.
ＰｂＯが３５係以上のときは、熱膨張係数が大きくなり
過ぎ、１５％以下では６５０℃以下の温度で封着するこ
とができない。When the coefficient of PbO is 35% or more, the thermal expansion coefficient becomes too large, and when it is less than 15%, sealing cannot be performed at a temperature of 650° C. or less.
ＭｎＯ２が５％以上の場合は、均質なガラスになり難く
、０．１係以下のときは、優れた半導体特性が得られな
い。When the MnO2 content is 5% or more, it is difficult to obtain a homogeneous glass, and when the MnO2 content is 0.1% or less, excellent semiconductor properties cannot be obtained.
本発明の実施例を第１表に示す。Examples of the present invention are shown in Table 1.
本発明のガラスは従来用いられていたＺｎ０Ｂ２０３−
３ｉ０２系ガラスと同様に、熱処理の温度と時間とによ
って、結晶化状態を制御し、その熱膨張係数を変化させ
ることができる。The glass of the present invention is the conventionally used Zn0B203-
Similar to 3i02 glass, the crystallization state can be controlled and the coefficient of thermal expansion can be changed by controlling the temperature and time of heat treatment.
その−例を第２表に示す。Examples are shown in Table 2.
第２表は、第１表２のガラスを、５８０℃、６００℃、
６２０℃、６４０℃でそれぞれ１０分間熱処理した場合
の熱膨張係数を示したものである。Table 2 shows the glass in Table 1 and 2 at 580°C, 600°C,
The coefficient of thermal expansion is shown when heat treated at 620°C and 640°C for 10 minutes, respectively.
表から明らかなように、５８０℃で１０分間熱処理した
場合、熱膨張係数は５０．５ Ｘ １０−ｙ℃であるが
、６４０°Ｃで１０分間熱処理した場合は、熱膨張係数
は４３、ＯＸ １０−ｙｏｃまで低下する。As is clear from the table, when heat treated at 580°C for 10 minutes, the thermal expansion coefficient is 50.5 x 10-y°C, but when heat treated at 640°C for 10 minutes, the thermal expansion coefficient is 43, OX It decreases to 10-yoc.
本発明のガラスには、特開昭５０−１２９１８１に示さ
れているガラスと同様に、核形成剤を添加することがで
きる。A nucleating agent can be added to the glass of the present invention, similar to the glass shown in JP-A-50-129181.
特に高耐圧ガラスモールド半導体装置のように、被覆ガ
ラスの熱膨張係数をシリコン素子の熱膨張係数３２Ｘ１
０−：／℃に近づける必要がある場合、核形成剤として
ＺｎＯ。In particular, for high-voltage glass molded semiconductor devices, the thermal expansion coefficient of the coating glass is set to 32x1, which is the thermal expansion coefficient of the silicon element.
ZnO as a nucleating agent if it is necessary to approach 0-:/°C.
２ＺｎＯ−８ｉＯ２，αｚｎＯ・Ｂ２Ｏ３などを選択的
に添加することにより、目的とする熱膨張係数を得るこ
とができる。By selectively adding 2ZnO-8iO2, αznO.B2O3, etc., the desired coefficient of thermal expansion can be obtained.
以上述べたように、本発明の半導体被覆用ガラスは、従
来のＺｎ０−Ｂ２０３−３ｉ０２系ガラスよりも封着温
度が略１００℃も低く、低圧ガラスモールド半導体装置
、高耐圧ガラスモールド半導体装置の被覆に好適である
。As described above, the glass for semiconductor coating of the present invention has a sealing temperature approximately 100°C lower than that of conventional Zn0-B203-3i02 glass, and is suitable for coating low-pressure glass molded semiconductor devices and high-voltage glass molded semiconductor devices. suitable for
第１図はガラスモールド型シリコンダイオードの説明図
である。
１；シリコン素子、２，３；モリブデン電極、８；ガラ
ス。FIG. 1 is an explanatory diagram of a glass molded silicon diode. 1: Silicon element, 2, 3: Molybdenum electrode, 8: Glass.
Claims (1)
０係、５ｉＯ２５〜１０係、ＰｂＯ］ ５〜４０係。 ＭｎＯ２０，１〜５係、ＣｅＯ２０〜３係、５ｂ２０３
０〜３％、Ａ／２０３０〜３係からなる半導体被覆用ガ
ラス。[Claims] 1% by weight, ZnO35-55%, 820310-3
0 section, 5iO25-10 section, PbO] 5-40 section. MnO20, 1-5, CeO20-3, 5b203
Glass for semiconductor coating consisting of 0 to 3%, A/2030 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP559278A JPS5835939B2 (en) | 1978-01-20 | 1978-01-20 | Glass for semiconductor coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP559278A JPS5835939B2 (en) | 1978-01-20 | 1978-01-20 | Glass for semiconductor coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5499118A JPS5499118A (en) | 1979-08-04 |
| JPS5835939B2 true JPS5835939B2 (en) | 1983-08-05 |
Family
ID=11615499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP559278A Expired JPS5835939B2 (en) | 1978-01-20 | 1978-01-20 | Glass for semiconductor coating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5835939B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58167445A (en) * | 1982-03-24 | 1983-10-03 | Nippon Electric Glass Co Ltd | Glass for coating semiconductor |
-
1978
- 1978-01-20 JP JP559278A patent/JPS5835939B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5499118A (en) | 1979-08-04 |
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